JP2008192433A - Manufacturing method of organic electroluminescent element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method in which an element having a long life can be obtained in the manufacturing method of an organic electroluminescent element having an organic layer formed by a wet process film-forming method. <P>SOLUTION: In the manufacturing method of the organic electroluminescent element having the organic layer formed between a positive electrode and a negative electrode by the wet process film-forming method, the process in which the organic layer is formed by the wet process film-forming method has a film-forming process, a drying process, and a cooling process, and in which after the end of the film-forming process, a drying process is carried out within fifteen minutes. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a method for manufacturing an organic electroluminescent device having an organic layer formed by a wet film formation method, and more particularly to a method for manufacturing an organic electroluminescent device capable of obtaining a long-life organic electroluminescent device. It is.

  Since the launch of Kodak's stacked organic electroluminescence (EL) element, the development of organic EL displays has been actively carried out and is now in practical use. is there.

  In such a stacked organic EL element, a plurality of organic layers (such as a light emitting layer, a hole injection layer, a hole transport layer, and an electron transport layer) are stacked between an anode and a cathode. In many cases, these organic layers are formed by vacuum-depositing organic layer materials such as low molecular weight dyes. However, it is difficult to obtain a thin film that is homogeneous and free of defects by the vapor deposition method, and it takes a long time to form several organic layers.

  On the other hand, a technique for forming a plurality of organic layers of a stacked organic EL element by a wet film forming method has been reported. For example, in Patent Document 1, a polymer type hole injection / transport material is applied alone, or a hole injection / transport material and a polymer binder are applied to form a hole injection / transport layer, Examples thereof include those in which a light emitting layer is formed by applying a light emitting material and a polymer binder thereon.

  Patent Document 2 describes an organic EL element using an organic thin film formed using a solution for forming an organic thin film in which a low molecular organic material is dissolved in a solvent.

JP-A-4-2096 JP-A-2005-78896

  However, in any literature, the element which formed the some organic layer with the wet film-forming method had the subject that the lifetime could not be lengthened.

  The present invention has been made in view of the above-described problems. That is, an object of the present invention is to provide a method for producing an organic electroluminescent device having an organic layer formed by a wet film forming method, in which a long-life device is obtained.

  As a result of intensive studies by the present inventors, it was found that the life of the completed device is prolonged by proceeding to the drying step immediately after the completion of the organic layer forming step, and the present invention has been reached.

  That is, the gist of the present invention is a method of manufacturing an organic electroluminescent element having an organic layer formed by a wet film forming method between an anode and a cathode, and the step of forming the organic layer by a wet film forming method includes The method of manufacturing an organic electroluminescent device includes a film forming step and a drying step, and the drying step is performed within 15 minutes after the film forming step is completed.

  At this time, the film forming step is preferably performed in an atmosphere having a relative humidity of 0.01 to 100 ppm and an oxygen volume concentration of 0.01 ppm to 100 ppm.

  In addition, the method for producing an organic electroluminescent element of the present invention further includes a step of forming an organic layer on the organic layer by a vapor deposition method after forming the organic layer by a wet film-forming method. After the step of forming the organic layer by the film method, before the step of forming the organic layer by the vapor deposition method, the organic layer formed by the wet film-forming method has a relative humidity of 0.01 ppm to 10% and a volume of oxygen. It is preferable to be placed in an atmosphere having a concentration of 0.01 ppm to 25%.

  Moreover, it is preferable that the organic layer formed by the said vapor deposition method is a hole-blocking layer or an electron carrying layer (Claim 4).

  The organic layer formed by the wet film formation method is preferably a light emitting layer.

  According to the method for producing an organic electroluminescent element of the present invention, an element having a long life can be produced by a wet film forming method.

  Hereinafter, the present invention will be described in detail. However, the present invention is not limited to the following description, and various modifications can be made without departing from the gist of the present invention.

An organic electroluminescent element (hereinafter sometimes referred to as “organic EL element” as appropriate) is generally a light emitting layer (in the present invention, mainly an organic light emitting layer) between an anode and a negative electrode provided on a substrate. ). Further, other layers such as a hole transport layer, a hole injection layer, an electron injection layer, and an electron transport layer may be provided. These layers can be formed by any known method such as a wet film formation method or a vapor deposition method.
In the method for producing an organic EL element of the present invention, when forming at least one of the above layers, the wet film forming method according to the present invention may be performed.

  Hereinafter, the wet film forming method according to the present invention will be described, and then the organic EL element according to the present invention will be described.

[1. Wet deposition method]
The present invention relates to a method for manufacturing an organic EL element having an organic layer formed by a wet film forming method between an anode and a cathode. The organic layer which is the subject of the present invention is formed on the anode, cathode or other organic layer.
The step of forming the organic layer by the wet film forming method according to the present invention includes a film forming step and a drying step, and the drying step is performed within 15 minutes after the film forming step is completed. As long as the wet film-forming method according to the present invention has such characteristics, any known method may be used as long as the effects of the present invention are not significantly impaired. Moreover, the wet film-forming method according to the present invention may have a process other than the film-forming process and the drying process, for example, may have a pretreatment process before the film-forming process, You may have a cooling process after the said drying process.

  The wet film-forming method according to the present invention can be used when forming any layer among the organic layers of the organic EL element described above. That is, it may be used when forming any one layer among the organic layers formed between the cathode and the anode of the organic EL element, or may be used when forming a plurality of layers. However, it is particularly preferable to apply to the light emitting layer.

  Hereinafter, the process of forming an organic layer by the wet film-forming method according to the present invention will be described. The step of forming the organic layer by the wet film forming method may have other steps in addition to the steps described below.

<1-1. Film formation process>
The film forming step can be carried out by arbitrarily changing it as long as the effects of the present invention are not significantly impaired. However, usually, in the film forming step, the organic layer material formed by the wet film forming method and a composition containing a solvent (hereinafter sometimes referred to as “coating composition”) are formed into a film shape. A film is formed by coating.

(solvent)
The solvent used in the coating composition is not limited as long as the effects of the present invention are not significantly impaired, and examples thereof include ether solvents and ester solvents.

  Examples of ether solvents include aliphatic ethers such as ethylene glycol dimethyl ether, ethylene glycol diethyl ether, and propylene glycol-1-monomethyl ether acetate (PGMEA); 1,2-dimethoxybenzene, 1,3-dimethoxybenzene, anisole , Phenetole, 2-methoxytoluene, 3-methoxytoluene, 4-methoxytoluene, 2,3-dimethylanisole, aromatic ethers such as 2,4-dimethylanisole, and the like.

  Examples of the ester solvent include aliphatic esters such as ethyl acetate, n-butyl acetate, ethyl lactate, and n-butyl lactate; phenyl acetate, phenyl propionate, methyl benzoate, ethyl benzoate, propyl benzoate, and benzoic acid. and aromatic esters such as n-butyl.

  In addition to the ether solvents and ester solvents described above, examples of usable solvents include aromatic hydrocarbon solvents such as benzene, toluene and xylene; N, N-dimethylformamide, N, N-dimethylacetamide and the like. Amide solvents such as dimethyl sulfoxide and the like. In addition, these may use only 1 type and may use 2 or more types by arbitrary combinations and a ratio. Moreover, you may use 1 type, or 2 or more types among these solvents in combination with 1 type or 2 or more types among the above-mentioned ether type solvent and ester type solvent.

  However, among the solvents described above, a solvent having a higher ability (solvent ability) to dissolve the material of the organic layer formed by the wet film forming method is preferable. This is because the concentration of the coating composition can be arbitrarily set to prepare a coating composition having a concentration excellent in the efficiency of the film forming process.

  The concentration of the organic layer material in the coating composition is not limited as long as the effects of the present invention are not significantly impaired, but is usually 0.01% by weight or more, preferably 0.1% by weight or more, and more preferably. Is 0.5% by weight or more, usually 70% by weight or less, preferably 60% by weight or less, and more preferably 50% by weight or less. If the concentration is too high, film thickness unevenness may occur, and if it is too low, defects may occur in the film.

  In addition, since the organic EL element is usually formed by laminating layers (organic layers) made of a large number of organic compounds, each layer is preferably a uniform layer. Here, when a layer is formed by a wet film formation method, if a certain amount of moisture is present in the composition for forming each organic layer, moisture is mixed into the coating film, and the uniformity of the film is impaired. The water content in the solution is preferably as low as possible. In general, since organic EL elements use many materials such as a cathode that are remarkably deteriorated by moisture, the presence of moisture is preferably as small as possible from the viewpoint of deterioration of the elements. For the above reasons, the amount of water contained in the coating composition is usually 1% by weight or less, preferably 0.1% by weight or less.

  Examples of methods for reducing the amount of water in the coating composition include the use of a nitrogen gas seal, the use of a desiccant, the dehydration of the solvent in advance, and the use of a solvent with low water solubility. Can be mentioned. Among these, from the viewpoint of preventing the phenomenon that the coating film absorbs moisture in the air and whitens when applying the coating composition, it is preferable to use a solvent having low water solubility. Specifically, in the coating composition, a solvent having low water solubility, for example, a solvent having water solubility at 25 ° C. of 1% by weight or less, preferably 0.1% by weight or less, is added to the entire coating composition. On the other hand, it is preferably contained in a concentration of usually 10% by weight or more, especially 30% by weight or more, particularly 50% by weight or more.

(Film formation method)
The film forming method in the film forming process is not limited as long as the effect of the present invention is not significantly impaired as long as patterning is possible. For example, spin coating method, dip coating method, die coating method, bar coating method, blade coating method, roll coating method, spray coating method, capillary coating method, ink jet method, screen printing method, gravure printing method, flexographic printing method, etc. Can be mentioned.

  Among these film forming methods, a spin coating method, a spray coating method, and an ink jet method are preferable. This is because the liquid property specific to the coating composition used in the organic EL element is met.

(Deposition temperature)
The film formation temperature in the film formation step is not limited as long as the effect of the present invention is not significantly impaired, but is preferably 10 ° C or higher, more preferably 13 ° C or higher, further preferably 16 ° C or higher, and preferably 50 ° C or lower, 40 ° C. or lower is more preferable, and 30 ° C. or lower is more preferable. This is to suppress the formation of crystals in the coating composition.

(Deposition humidity)
The relative humidity in the film forming step is not limited as long as the effect of the present invention is not significantly impaired, but is usually 0.01 ppm or more, preferably 0.05 ppm or more, more preferably 0.1 ppm or more, and usually 80% or less, preferably Is 60% or less, more preferably 15% or less, still more preferably 1% or less, and particularly preferably 100 ppm or less. If the relative humidity is too low, it may be difficult to control film forming conditions in the wet film forming process. On the other hand, if it is too large, moisture adsorption on the organic layer may be easily affected.

(Oxygen concentration)
The volume concentration of oxygen in the film forming step is not limited as long as the effect of the present invention is not significantly impaired, but is preferably 0.01 ppm or more, more preferably 0.05 ppm or more, and preferably 50% or less, more preferably 25. % Or less, more preferably 1% or less, and particularly preferably 100 ppm or less. An environment in which the oxygen concentration is too low is difficult to control. If the oxygen concentration is too high, oxygen diffuses inside the organic layer, which may adversely affect device characteristics.

(Number of particles)
The number of fine particles (that is, the number of particles) in the film forming environment is not limited as long as the effect of the present invention is not significantly impaired. From the viewpoint of reducing dark spots, particles having a particle size of 0.5 μm or more are usually per 1 m ^3. It is 10,000 or less, preferably 5000 or less. Particularly preferably, the number of particles having a particle diameter of 0.3 μm or more is 5000 or less per 1 m ³ . The lower limit is not limited, but from the viewpoint of industrial practicality, it can be considered that there are usually 100 particles having a particle size of 0.3 μm or more per 1 m ³ . If the number of particles is too large, dark spots may occur, and environmental control tends to become more difficult as the number falls below the above range.
The number of fine particles is detected by a light scattering method, and can be detected by, for example, a handheld particle counter KR (manufactured by Lion Co., Ltd.).

(Film thickness)
The film thickness of the organic layer formed in the film forming step is not limited as long as the effect of the present invention is not significantly impaired, but is preferably 10 nm or more, more preferably 15 nm or more, further preferably 20 nm or more, and preferably 30 μm or less. More preferably, it is 20 micrometers or less, More preferably, it is 15 micrometers or less. This is because high film thickness accuracy can be obtained within this range.
The film thickness accuracy is defined as the ratio between the maximum value and the minimum value of the film thickness of the light emitting portion (the organic layer portion sandwiched between the anode and the cathode). The film thickness accuracy is measured with a contact film thickness meter or an interference film thickness meter.

<1-2. Drying process>
After the film forming step, the formed film of the coating composition is dried to obtain an organic layer. However, conventionally, the time from the completion of the film formation process to the drying process has been set as the time required to obtain the smoothness of the film (leveling effect). Specifically, the drying process was performed after about several hours after the film forming process was completed. Therefore, even in an organic EL element manufactured under the same conditions, the element characteristics tend to change greatly and the lifetime tends to be shortened.

  On the other hand, the wet film-forming method according to the present invention is characterized in that the drying process is performed within 15 minutes, preferably within 10 minutes after the film-forming process is completed. This is because if the time until the drying step is too long, the solvent contained in the film tends to absorb moisture and lead to a decrease in life. On the other hand, the lower limit is not limited, but is preferably 30 seconds or more, and more preferably 1 minute or more. If the time until the drying step is too short, it is difficult to obtain a film leveling effect, and film thickness unevenness may occur.

  In addition, the completion | finish time of a film-forming process means the time when the liquid film formation of the composition for coating was completed. The starting point of the drying process refers to the starting point of heat treatment, reduced pressure treatment, inert gas treatment, sputtering treatment, or the like. That is, it refers to a point in time when heating, decompression, or sputtering is started, or an inert gas is started to be introduced. Here, for example, “the drying process is performed within 15 minutes after completion of the film forming process” means that the time between the end of the film forming process and the start time of the drying process is within 15 minutes.

(Dry process method)
Hereinafter, an example of a drying process will be specifically described.
The method for drying the coating composition formed into a film is not limited as long as the effects of the present invention are not significantly impaired. Specific examples include heat treatment, reduced pressure treatment, inert gas treatment, sputtering treatment, and the like.
Among these, heat treatment is preferable. This is because the residual solvent in the film can be easily reduced.

You may perform said process individually or in combination of multiple. When combining a plurality of processes, the processes may be performed in an arbitrary order, or all or a part of the processes may be performed in parallel.
However, it is preferable to perform drying under conditions such that there is no unevenness of drying. In order to prevent foreign matters from entering during the drying process, the drying process is preferably performed in a clean room.

The method of heat treatment in the drying step is not limited as long as the effects of the present invention are not impaired, and can be arbitrarily changed and carried out.
Specific methods of heat treatment include, for example, an in-furnace bake method in which a substrate is placed in a heating furnace (baking furnace) and the coating film is heated, and the plate is mounted on a plate (hot plate). And a hot plate method in which the coating film is heated, a heater is disposed on the upper surface side and / or the lower surface side of the base material, and an electromagnetic wave (for example, infrared rays) is irradiated from the heater to heat the thin film. . Of these, the plate (hot plate) method is preferable. This is because the solvent in the film can be volatilized uniformly.

The method of the decompression process in the drying step is not limited as long as the effect of the present invention is not impaired, and can be arbitrarily changed and implemented.
As a specific method of the decompression process, for example, a method in which a base material is disposed in a sealable chamber and the inside of the chamber is decompressed to volatilize the solvent is exemplified.

(Drying temperature)
The drying temperature in the drying step is not limited as long as the effects of the present invention are not significantly impaired, but when heat treatment is performed, it is usually 50 ° C. or higher, preferably 80 ° C. or higher, and usually 300 ° C. or lower, preferably 250 ° C. or lower. . If the temperature is too high, the other layers may be adversely affected. If the temperature is too low, the solvent may remain in the film.
The drying temperature refers to the atmospheric temperature in the case of the in-furnace baking method, the plate temperature in the case of the hot plate method, and the atmospheric temperature in the case of the method using a heater.

(Drying time)
The drying time in the drying step is not limited as long as the effect of the present invention is not significantly impaired, but is preferably 30 seconds or more, more preferably 1 minute or more, further preferably 2 minutes or more, and preferably 5 hours or less, more preferably Is 2 hours or less, more preferably 1 hour or less. If the drying time is too long, the components of the other layers tend to diffuse, and if it is too short, the film tends to be inhomogeneous.

(Relative humidity)
The relative humidity in the heat treatment is not limited as long as the effect of the present invention is not significantly impaired, but is preferably 1% or more, more preferably 5% or more, further preferably 10% or more, and preferably 80% or less, more preferably 50% or less, more preferably 20% or less. If the relative humidity is too high, moisture tends to remain in the film.

(Degree of vacuum)
The degree of vacuum in the drying step is not limited as long as the effect of the present invention is not significantly impaired. However, in the case of performing a decompression treatment, it is preferably 1 × 10 ⁻² Pa or less, more preferably 1 × 10 ⁻³ Pa or less Preferably it is 5 × 10 ⁻⁴ Pa or less, and the lower limit is not limited, but it is usually 1 × 10 ⁻⁵ Pa or more. If the degree of vacuum is too high, it takes time to increase the degree of vacuum, and environmental control tends to be difficult during that time. If it is too low, the solvent tends to remain in the film.

(Film thickness after drying process)
The film thickness of the organic layer after the drying step is not limited as long as the effect of the present invention is not significantly impaired, but is preferably 10 nm or more, more preferably 15 nm or more, still more preferably 20 nm or more, and preferably 300 nm or less. Preferably it is 200 nm, More preferably, it is 150 nm or less. If the film thickness is too small, defects may occur in the thin film. In addition, if the film thickness is too large, the influence of element characteristics may increase due to film thickness unevenness.

(Film thickness accuracy after drying process)
The film thickness accuracy of the coating composition after the drying step is preferably 500% or less, more preferably 300% or less, still more preferably 200% or less, and preferably 2% or more, more preferably 5%. More preferably, it is 8% or more. If the film thickness accuracy is too large, device characteristics such as uneven light emission tend to be unstable, and if it is too small, film defects tend to occur, and the film quality tends to be non-homogeneous. The method for measuring the film thickness accuracy is the same as the method described above.

<1-3. Cooling process>
When the organic layer is subjected to heat treatment in the drying step or heated in other steps, a step of cooling the organic layer (cooling step) may be performed. The cooling step can be carried out with any change as long as the effects of the present invention are not significantly impaired. Specifically, it is preferable that at least one of the items described below is satisfied.
As a specific method of the cooling process, for example, a method of bringing the temperature of the atmosphere in which the film of the dried coating composition is placed into a temperature range to be cooled, a substrate is mounted on a plate (hot plate), And a method of cooling the coating film.

(Cooling temperature)
The cooling temperature is not limited as long as the effects of the present invention are not significantly impaired, but the dried coating composition film is preferably 150 ° C. or less, more preferably 120 ° C. or less, still more preferably 100 ° C. or less, particularly preferably. Although it is 80 degrees C or less and there is no restriction | limiting in a minimum, normally it cools to 5 degrees C or more. If the cooling temperature is too high, the components of other layers may diffuse, and if it is too low, crystals may form in the coating composition.
The cooling temperature is the ambient temperature. In the case of the hot plate method, it means the plate temperature.

(Cooling rate)
The cooling rate is not limited as long as the effect of the present invention is not significantly impaired, but is preferably 0.1 ° C./min or more, more preferably 0.5 ° C./min or more, further preferably 0.8 ° C./min or more, particularly It is preferably 1 ° C./min or more, preferably 50 ° C./min or less, more preferably 30 ° C./min or less, still more preferably 20 ° C./min or less, particularly preferably 10 ° C./min or less. If the cooling rate is too low, the production cost may increase, and if it is too high, the film quality may deteriorate due to the difference in linear expansion between adjacent films.

(Humidity)
The relative humidity in the cooling step is not limited as long as the effect of the present invention is not significantly impaired, but is preferably 0.01 ppm or more, more preferably 0.05 ppm or more, further preferably 0.08 ppm or more, and preferably 50% or less. More preferably, it is 10% or less, More preferably, it is 1% or less. If the relative humidity is too low, there is a tendency that it is difficult to control the environment to be constant, and there is a possibility that the device cannot be stably manufactured. If the relative humidity is too high, moisture may be physically adsorbed on the film surface.

(Cooling time)
The cooling time in the cooling step is not limited as long as the effect of the present invention is not significantly impaired, but is preferably 5 hours or less, more preferably 3 hours or less, still more preferably 1 hour or less, particularly preferably 30 minutes or less, and preferably Is 30 seconds or more. If the cooling time is too short, film distortion tends to occur.

(Atmosphere gas)
Although the atmosphere at the time of cooling in a cooling process is not limited unless the effect of this invention is impaired remarkably, a vacuum environment and an inert gas environment may be sufficient.
In the case of a vacuum environment, the degree of vacuum is preferably 1 × 10 ⁻² Pa or less, more preferably 1 × 10 ⁻³ Pa or less, and there is no lower limit, but 1 × 10 ⁻⁵ Pa or more is preferable. If the degree of vacuum is too high, it takes time to increase the degree of vacuum, and environmental control during that time tends to be difficult.
Examples of the inert gas include nitrogen gas, rare gases, nonflammable gases, and the like. In addition, only 1 type may be used for an inert gas and it may use 2 or more types together by arbitrary combinations and a ratio.

(Thickness difference before and after the cooling process)
The difference in thickness of the organic layer before and after the cooling step is not limited as long as the effect of the present invention is not significantly impaired, but preferably 50% or less, more preferably 30 when the thickness before the cooling step is 100%. % Or less, more preferably 20% or less. If the film thickness difference is too large, there is a possibility of film peeling due to film distortion. In addition, although a minimum is 0%, from a viewpoint of industrial availability, it is 1% or more normally.

<1-4. Other>
Another organic layer can be formed on the organic layer formed by the wet film formation method. The other organic layer may be further formed by a wet film forming method, or may be formed by another method such as a vapor deposition method.

[2. Vapor deposition method]
A vapor deposition method can be used when forming any layer among the organic layers which the above-mentioned organic EL element has. The organic layer formed by the vapor deposition method may be a single layer, or may be a laminate of a plurality of layers.

  Hereinafter, the process of forming an organic layer by a vapor deposition method will be described. The step of forming the organic layer by the vapor deposition method may have other steps in addition to the steps described below.

<2-1. Pre-deposition treatment process>
In the case of forming an organic layer by an evaporation method on the organic layer formed by the above wet film formation method, the organic layer is formed by an evaporation method after the step of forming the organic layer by the wet film formation method. It is preferable to put it in the following environment before (hereinafter sometimes referred to as a “deposition pretreatment process” as appropriate).

(Humidity)
The relative humidity in the pre-deposition treatment step is not limited as long as the effect of the present invention is not significantly impaired, but is preferably 0.01 ppm or more, more preferably 0.05 ppm, further preferably 0.08 ppm, and preferably 10% or less. More preferably, it is 1% or less, More preferably, it is 0.5% or less. If the humidity is too low, it is difficult to control the environment uniformly, and there is a possibility that the device cannot be stably manufactured. On the other hand, if the humidity is too high, moisture is adsorbed on the organic layer, so that the charge mobility tends to be changed and the intended emission color tends to be difficult to obtain.

(Oxygen concentration)
The volume concentration of oxygen in the pre-deposition treatment step is not limited as long as the effect of the present invention is not significantly impaired, but is preferably 0.01 ppm or more, more preferably 0.05 ppm or more, further preferably 0.1 ppm or more, and usually It is 25% or less, more preferably 10% or less, and further preferably 5% or less. This is because the influence of moisture is reduced by controlling the oxygen concentration.

(Atmosphere gas)
The atmosphere in the pre-deposition treatment step is not limited as long as the effects of the present invention are not significantly impaired, but may be a vacuum environment or an inert gas environment.
In the case of a vacuum environment, the degree of vacuum is usually preferably 1 × 10 ⁻² Pa or less, more preferably 1 × 10 ⁻³ Pa or less, and there is no lower limit, but 1 × 10 ⁻⁵ Pa or more is preferable. .
Examples of the inert gas include nitrogen gas and rare gas.

(temperature)
The temperature in the pre-deposition treatment step is not limited as long as the effect of the present invention is not significantly impaired, but is preferably 10 ° C. or higher, more preferably 13 ° C. or higher, further preferably 16 ° C. or higher, and preferably 110 ° C. or lower. Preferably it is 80 degrees C or less, More preferably, it is 70 degrees C or less. If the temperature is too high, the components of the other layers tend to diffuse, and if it is too low, it tends to be difficult to sufficiently remove moisture in the film.

(time)
The time of the pre-deposition treatment step is not limited as long as the effect of the present invention is not significantly impaired, but is usually 20 seconds or longer, preferably 30 seconds or longer, more preferably 35 seconds or longer, more preferably 40 seconds or longer, and usually 2 Time or less, preferably 1 hour or less, more preferably 30 minutes or less, and even more preferably 15 minutes or less. If the time is too long, the components of the other layers tend to diffuse, and if it is too short, moisture in the film tends not to be sufficiently removed.

<2-2. Deposition process>
Formation of the organic layer by vapor deposition is preferably performed as follows.

(pressure)
The pressure in the vapor deposition method is not limited as long as the effect of the present invention is not significantly impaired, but is preferably 1 × 10 ⁻⁷ Pa or more, more preferably 5 × 10 ⁻⁷ Pa or more, and further preferably 1 × 10 ⁻⁶ Pa or more. Particularly preferably 5 × 10 ⁻⁶ Pa or more, preferably 1 × 10 ⁻² Pa or less, more preferably 1 × 10 ⁻³ Pa or less, still more preferably 0.5 × 10 ⁻³ Pa or less, particularly preferably Is 1 × 10 ⁻⁴ Pa or less. When the pressure is outside this range, the membrane tends to be inhomogeneous.

(temperature)
The temperature in the vapor deposition method is not limited as long as the effect of the present invention is not significantly impaired, but is preferably 15 ° C or higher, more preferably 20 ° C or higher, further preferably 30 ° C or higher, and preferably 300 ° C or lower, more preferably. 200 ° C. or lower, more preferably 150 ° C. or lower. If the temperature is too high, the components of the other layers tend to diffuse, and if it is too low, the film tends to be inhomogeneous.
Here, the temperature refers to the temperature of the substrate (or the organic EL element being manufactured).

(Deposition rate)
In the vapor deposition method, the vapor deposition rate is not limited as long as the effect of the present invention is not significantly impaired, but is preferably 0.001 nm / s or more, more preferably 0.005 nm / s or more, further preferably 0.01 nm / s or more, Preferably, it is 8 nm / s or less, More preferably, it is 7 nm / s or less, More preferably, it is 1 nm / s or less. If the deposition rate is too fast, it tends to be difficult to control the film thickness, and if it is too slow, the smoothness of the film tends to be impaired. Further, the deposition rate may be changed continuously.

(Vapor deposition method)
When forming an organic layer by vapor deposition, for example, put a vapor deposition source in a crucible or metal boat installed in a vacuum vessel, evacuate the vacuum vessel to an appropriate pressure, and then heat the crucible or metal boat. Then, the organic layer can be formed on the organic EL element that is being manufactured and evaporated and placed facing the crucible or the metal boat.

In addition, when vapor-depositing an alkali metal by a vapor deposition method, it is usually preferable to use an alkali metal dispenser in which nichrome is filled with an alkali metal chromate and a reducing agent. By heating the dispenser in a vacuum container, the alkali metal chromate is reduced and the alkali metal is evaporated.
When the organic electron transport compound and alkali metal are co-evaporated, the organic electron transport compound is put in a crucible installed in a vacuum vessel, and the inside of the vacuum vessel is evacuated to about 10 ⁻⁴ Pa by an appropriate vacuum pump. After that, it is preferable that each crucible and the dispenser are simultaneously heated and evaporated to form an electron injection layer on the substrate placed facing the crucible and the dispenser. At this time, co-evaporation is uniformly performed in the film thickness direction of the electron injection layer, but there may be a concentration distribution in the film thickness direction.

<2-3. Other>
Another organic layer can be formed on the organic layer formed by vapor deposition. The other organic layer may be further formed by an evaporation method, or may be formed by another method such as a wet film forming method.

[3. Organic electroluminescent device]
Hereinafter, the structure of the organic EL device manufactured by the manufacturing method of the present invention (hereinafter sometimes referred to as “organic EL device of the present invention” as appropriate) will be described. As an organic layer that can use the wet film forming method according to the present invention, a hole injection layer, a hole transport layer, a light emitting layer, a hole blocking layer, an electron transport layer, an electron injection layer, which will be described in detail below, Examples include layers such as an electron blocking layer. These layers are described in [1. Wet film formation method described in [Wet film formation method] and [2. Although it can also be obtained by the vapor deposition method described in [Vapor Deposition Method], it is sufficient that at least one layer is manufactured by the wet film formation method according to the present invention. In addition, when the wet film-forming method according to the present invention is used for the light emitting layer, an organic EL element having a long lifetime is particularly obtained.
The organic EL device of the present invention usually has a substrate, and has a laminated structure in which the above-described layers are laminated on the substrate. Hereinafter, it demonstrates in this order.

  FIG. 1 is a cross-sectional view schematically showing an example of the structure of the organic EL element of the present invention. An organic EL element 10a shown in FIG. 1 is configured by laminating an anode 2, a hole injection layer 3, a light emitting layer 4, an electron injection layer 5 and a cathode 6 in this order on a substrate 1.

<3-1. Substrate>
The board | substrate 1 becomes a support body of the organic EL element 10a. As the base material for forming the organic EL element of the present invention, a transparent substrate made of a general-purpose material can be used.
For example, various types of shot glass such as BK7, SF11, LaSFN9, BaK1, and F2, synthetic phased silica glass, optical crown glass, low expansion borosilicate glass, sapphire glass, soda glass, alkali-free glass, and TFTs are formed. Glass and polymer materials include acrylic resins such as polymethyl methacrylate and crosslinked acrylate, aromatic polycarbonate resins such as Pisphenol A polycarbonate, polyester resins such as polyethylene terephthalate, amorphous polyolefin resins such as polycycloolefin, and epoxy resins , Styrene resins such as polystyrene, polysulfone resins such as polyethersulfone, and synthetic resins such as polyetherimide resin. Moreover, 2 or more types of laminated bodies may be sufficient among these. Depending on the purpose and application, an optical film such as an antireflection film, a circularly polarizing film, or a retardation film may be formed on or bonded to these substrates.

  However, it is preferable to pay attention to gas barrier properties when using a synthetic resin substrate. This is because if the gas barrier property of the substrate 1 is too small, the organic EL element 10a may be deteriorated by the outside air that has passed through the substrate 1. For this reason, a method of providing a gas barrier property by providing a dense silicon oxide film or the like on at least one surface of the synthetic resin substrate is also a preferable method.

<3-2. Anode>
An anode 2 is provided on the substrate 1. The anode 2 plays a role of injecting holes into a layer (such as the hole injection layer 3 or the light emitting layer 4) on the light emitting layer 4 side.
This anode 2 is usually made of a metal such as aluminum, gold, silver, nickel, palladium, or platinum; a metal oxide such as an oxide of indium and / or tin; a metal halide such as copper iodide; a carbon black, or It is composed of a conductive polymer such as poly (3-methylthiophene), polypyrrole, or polyaniline. In addition, only 1 type may be used for the material of the anode 2, and 2 or more types may be used together by arbitrary combinations and a ratio.

Although there is no restriction | limiting in the formation method of the anode 2, Usually, it carries out by sputtering method, a vapor deposition method, etc. In addition, when forming the anode 2 using fine metal particles such as silver, fine particles such as copper iodide, carbon black, conductive metal oxide fine particles, and conductive polymer fine powder, an appropriate binder resin solution is used. The anode 2 can also be formed by dispersing them and applying them onto the substrate 1. Furthermore, in the case of a conductive polymer, a thin film can be directly formed on the substrate 1 by electrolytic polymerization, or the anode 2 can be formed by applying a conductive polymer on the substrate 1 (Appl. Phys. Lett. 60, 2711, 1992).
In addition, the anode 2 is usually a single layer structure, but may be a laminated structure made of a plurality of materials if desired.

  The thickness of the anode 2 varies depending on the required transparency. When transparency is required, the visible light transmittance is usually 60% or more, preferably 80% or more. In this case, the thickness of the anode 2 is usually 5 nm or more, preferably 10 nm or more. Also, it is usually 1000 nm or less, preferably 500 nm or less. On the other hand, when the anode 2 may be opaque, the thickness of the anode 2 is arbitrary, and the anode 2 may be the same as the substrate 1. Further, it is possible to laminate different conductive materials on the anode 2.

Further, for the purpose of removing impurities adhering to the anode 2 and adjusting the ionization potential to improve the hole injection property, the surface of the anode 2 is subjected to ultraviolet (UV) / ozone treatment, oxygen plasma, argon plasma. It is preferable to process.
Furthermore, a known anode buffer layer is inserted between the hole injection layer 3 and the anode 2 for the purpose of further improving the efficiency of hole injection and improving the adhesion of the whole organic layer to the anode. Also good.

<3-3. Hole injection layer>
The hole injection layer 3 is a layer that transports holes from the anode 2 to the light emitting layer 4. Hereinafter, components contained in the hole injection layer 3 will be described first, and then a method for forming the hole injection layer 3 will be described.

<3-3-1. Material for hole injection layer>
The material of the hole injection layer is contained in the hole injection layer 3. In addition, when the hole injection layer 3 is formed by a wet film forming method, the positive hole injection layer 3 may be applied to a coating composition for a hole injection layer (hereinafter also referred to as “hole injection layer composition” as appropriate). The material of the hole injection layer is contained. The material of the hole injection layer is not particularly limited as long as it can form the hole injection layer 3. However, usually, a polymer and an electron-accepting compound are used as the material for the hole injection layer. Further, other components may be used as the material for the hole injection layer. Hereinafter, materials of these hole injection layers will be described.

(3-3-1. Polymer)
The type of the polymer used as the material for the hole injection layer is arbitrary as long as the effects of the present invention are not significantly impaired. However, among them, a polymer having a hole transporting property (a high molecular weight hole transporting compound, hereinafter referred to as “hole transporting polymer” as appropriate) is preferable. From this viewpoint, ionization of 4.5 eV to 5.5 eV is preferable. A compound having a potential is preferable. The ionization potential is defined as the energy required to emit electrons at the HOMO (highest occupied molecular orbital) level of a material to the vacuum level, and can be measured directly by photoelectron spectroscopy or electrochemically. It can also be obtained by correcting the participation potential obtained with respect to the reference electrode. In the case of the latter method, for example, when a saturated sweet potato electrode (SCE) is used as a reference electrode, it is represented by the following formula ("Molecular Semiconductors", Springer-Verlag, 1985, pp. 98).
Ionization potential = oxidation potential (vs. SCE) + 4.3 eV

  Examples of the hole transporting polymer include aromatic amine compounds, phthalocyanine derivatives, porphyrin derivatives, oligothiophene derivatives, and the like. Of these, aromatic amine compounds are preferred from the viewpoints of amorphousness, solubility in solvents, and visible light transmittance.

Of the aromatic amine compounds, aromatic tertiary amine compounds are particularly preferable. In addition, the aromatic tertiary amine compound here is a compound having an aromatic tertiary amine structure, and includes a compound having a group derived from an aromatic tertiary amine.
The type of the aromatic tertiary amine compound is not particularly limited, but a polymer compound having a weight average molecular weight of 1,000 or more and 1,000,000 or less is more preferable from the viewpoint of the surface smoothing effect.

Preferable examples of the aromatic tertiary amine polymer compound include a polymer compound having a repeating unit represented by the following formula (I).

(In the formula (I), Ar ¹ and Ar ² each independently represent an aromatic hydrocarbon group which may have a substituent, or an aromatic heterocyclic group which may have a substituent. Ar ^{3 to} Ar ⁵ each independently represents a divalent aromatic hydrocarbon group which may have a substituent, or a divalent aromatic heterocyclic group which may have a substituent. X represents a linking group selected from the following linking group group X1.)

Linking group group X1:

(In the formula, each of Ar ^{11 to} Ar ²⁸ independently represents an optionally substituted aromatic hydrocarbon group or aromatic heterocyclic group. R ¹ and R ² each independently represents hydrogen. Represents an atom or any substituent.)

In the formula (I), as Ar ^{1 to} Ar ⁵ and Ar ^{11 to} Ar ²⁸ , any monovalent or divalent group derived from any aromatic hydrocarbon ring or aromatic heterocyclic ring is applicable. That is, each of Ar ¹ , Ar ² , Ar ¹⁶ , Ar ^21, and Ar ²⁶ can be a monovalent group. Ar ^{3 to} Ar ⁵ , Ar ^{11 to} Ar ¹⁵ , Ar ^{17 to} Ar ²⁰ , Ar ²² to A divalent group can be applied to each of Ar ²⁵ , Ar ^27, and Ar ²⁸ . These may be the same or different from each other. Moreover, you may have arbitrary substituents.

  Examples of the aromatic hydrocarbon ring include a 5- or 6-membered monocyclic ring or a 2-5 condensed ring. Specific examples thereof include a benzene ring, naphthalene ring, anthracene ring, phenanthrene ring, perylene ring, tetracene ring, pyrene ring, benzpyrene ring, chrysene ring, triphenylene ring, acenaphthene ring, fluoranthene ring, fluorene ring and the like.

  Examples of the aromatic heterocycle include a 5- or 6-membered monocyclic ring or a 2-4 condensed ring. Specific examples thereof include furan ring, benzofuran ring, thiophene ring, benzothiophene ring, pyrrole ring, pyrazole ring, imidazole ring, oxadiazole ring, indole ring, carbazole ring, pyrroloimidazole ring, pyrrolopyrazole ring, pyrrolopyrrole ring. , Thienopyrrole ring, thienothiophene ring, furopyrrole ring, furofuran ring, thienofuran ring, benzoisoxazole ring, benzisothiazole ring, benzimidazole ring, pyridine ring, pyrazine ring, pyridazine ring, pyrimidine ring, triazine ring, quinoline ring, isoquinoline Ring, cinolin ring, quinoxaline ring, phenanthridine ring, benzimidazole ring, perimidine ring, quinazoline ring, quinazolinone ring, azulene ring and the like.

Ar ^{3 to} Ar ⁵ , Ar ^{11 to} Ar ¹⁵ , Ar ^{17 to} Ar ²⁰ , Ar ^{22 to} Ar ²⁵ , Ar ²⁷ , Ar ²⁸ may be one type or two or more types of aromatic hydrocarbon rings exemplified above. And / or two or more divalent groups derived from an aromatic heterocycle may be linked and used.

Furthermore, the group derived from the aromatic hydrocarbon ring and / or aromatic heterocycle of Ar ^{1 to} Ar ⁵ and Ar ^{11 to} Ar ²⁸ may further have a substituent unless it is contrary to the gist of the present invention. Good. The molecular weight of the substituent is usually 400 or less, preferably about 250 or less. The type of the substituent is not particularly limited, and examples thereof include one or more selected from the following substituent group W. In addition, as for a substituent, 1 piece may be substituted independently and 2 or more may be substituted by arbitrary combinations and ratios.

[Substituent group W]
An alkyl group having usually 1 or more, usually 10 or less, preferably 8 or less, such as a methyl group or an ethyl group; an alkenyl group having usually 2 or more, usually 11 or less, preferably 5 or less, such as a vinyl group An alkynyl group having usually 2 or more, usually 11 or less, preferably 5 or less, such as an ethynyl group; an alkoxy having a carbon number of usually 1 or more, usually 10 or less, preferably 6 or less, such as a methoxy group or an ethoxy group; A group; an aryloxy group such as a phenoxy group, a naphthoxy group, a pyridyloxy group, etc., usually 4 or more, preferably 5 or more, usually 25 or less, preferably 14 or less; a carbon such as a methoxycarbonyl group or an ethoxycarbonyl group An alkoxycarbonyl group having a number of usually 2 or more, usually 11 or less, preferably 7 or less; a dimethylamino group, a diethylamino group or the like, and usually having 2 or more carbon atoms Usually 20 or less, preferably 12 or less dialkylamino group; diphenylamino group, ditolylamino group, N-carbazolyl group, etc., and usually diarylamino having 10 or more carbon atoms, preferably 12 or more, usually 30 or less, preferably 22 or less Group: an arylalkylamino group having 6 or more carbon atoms, preferably 7 or more, usually 25 or less, preferably 17 or less, such as a phenylmethylamino group; an acetyl group, a benzoyl group or the like, and usually having 2 or more carbon atoms, Usually an acyl group of 10 or less, preferably 7 or less; a halogen atom such as a fluorine atom or a chlorine atom; a haloalkyl group having a carbon number of usually 1 or more, usually 8 or less, preferably 4 or less, such as a trifluoromethyl group; An alkylthio group having 1 to 10 carbon atoms, preferably 6 or less, preferably 6 or less; An arylthio group having usually 4 or more, preferably 5 or more, usually 25 or less, preferably 14 or less, such as a ruthio group, a naphthylthio group, or a pyridylthio group; Or more, preferably 3 or more, usually 33 or less, preferably 26 or less silyl group; trimethylsiloxy group, triphenylsiloxy group, etc., the carbon number is usually 2 or more, preferably 3 or more, usually 33 or less, preferably 26 or less. A siloxy group; a cyano group; an aromatic hydrocarbon ring group having usually 6 or more, usually 30 or less, preferably 18 or less, such as a phenyl group or a naphthyl group; a carbon number such as a thienyl group or a pyridyl group. An aromatic heterocyclic group of 3 or more, preferably 4 or more, usually 28 or less, preferably 17 or less.

Among those described above, Ar ¹ and Ar ² are 1 derived from a benzene ring, a naphthalene ring, a phenanthrene ring, a thiophene ring, and a pyridine ring from the viewpoint of the solubility, heat resistance, and hole injection / transport properties of the polymer compound. Is more preferably a phenyl group or a naphthyl group.

Among the above, Ar ^{3 to} Ar ⁵ are divalent benzene rings, naphthalene rings, anthracene rings, and phenanthrene rings from the viewpoint of heat resistance and hole injection / transport properties including redox potential. Group is preferable, and a phenylene group, a biphenylene group, and a naphthylene group are more preferable.

In the formula (I), as R ¹ and R ² , a hydrogen atom or an arbitrary substituent is applicable. These may be the same or different from each other. The type of the substituent is not particularly limited as long as it is not contrary to the gist of the present invention. However, if applicable substituents are exemplified, an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, a silyl group, a siloxy group, an aromatic group A hydrocarbon group and an aromatic heterocyclic group are mentioned. Specific examples thereof include the groups exemplified above in the substituent group W.

  The weight average molecular weight of the hole transporting polymer used as the material of the hole injection layer is arbitrary as long as the effect of the present invention is not significantly impaired, but is usually 1000 or more, preferably 2000 or more, more preferably 3000 or more, Usually, it is 500,000 or less, preferably 200,000 or less, more preferably 100,000 or less.

  The ratio of the polymer in the hole injection layer 3 is arbitrary as long as the effect of the present invention is not significantly impaired, but is usually 10% by weight or more, preferably 30% by weight in terms of the weight ratio with respect to the whole hole injection layer 3. In addition, it is usually 99.9% by weight or less, preferably 99% by weight or less. In addition, when using 2 or more types of polymers together, it is preferable that these total content is contained in the said range.

<3-3-1-2. Electron-accepting compound>
The kind of the electron accepting compound used as the material for the hole injection layer is arbitrary as long as the effects of the present invention are not significantly impaired. Examples thereof include onium salts substituted with an organic group such as 4-isopropyl-4′-methyldiphenyliodonium tetrakis (pendafluorophenyl) borate and triphenylsulfonium tetrafluoroborate; No. 251067), high-valence inorganic compounds such as ammonium peroxodisulfate; cyano compounds such as tetracyanoethylene; aromatic boron compounds such as tris (pendafluorophenyl) borane (JP-A-2003-31365); fullerene derivatives ; Iodine etc. are mentioned. Of the above compounds, an onium salt substituted with an organic group is preferable in terms of having strong oxidizing power, and an inorganic compound having a high valence is preferable, and an onium salt substituted with an organic group in terms of being soluble in various solvents, A cyano compound and an aromatic boron compound are preferable. Furthermore, an onium salt substituted with an organic group is most preferable from the viewpoint of achieving both strong oxidizing power and high solubility, and particularly preferably a compound represented by the following formulas (II-1) to (II-3). .

(In the above formulas (II-1) to (II-3), R ¹¹ , R ²¹ and R ³¹ each independently represents an organic group bonded to A ^{1 to} A ³ via a carbon atom. R ¹² , R ²² , R ²³ and R ^{32 to} R ³⁴ each independently represents an arbitrary group, and two or more adjacent groups of R ^{11 to} R ³⁴ may be bonded to each other to form a ring. A ¹ -A ³ are all elements in the long period type periodic table (hereinafter, unless otherwise specified, the term “periodic table” refers to the long period type periodic table). there are, a ¹ represents an element belonging to group 17 of the periodic table, a ² represents an element belonging to group 16 of the periodic table, a ³ is .Z ₁ representing an element belonging to group 15 of the periodic table ^{n1- to} Z ₃ ^n3- each independently represents a counter anion, and n _{1 to} n ₃ each independently represents an ionic value of the counter anion.)

In the above formulas (II-1) to (II-3), R ¹¹ , R ²¹ and R ³¹ each independently represents an organic group bonded to A ^{1 to} A ³ via a carbon atom. Therefore, as R ¹¹ , R ^21, and R ³¹ , the type is not particularly limited as long as it is an organic group having a carbon atom at the bond portion with A ^{1 to} A ³ unless it is contrary to the gist of the present invention.

The molecular weights of R ¹¹ , R ²¹ and R ³¹ are each a value including the substituent, and are usually 1000 or less, preferably 500 or less.
Preferred examples of R ¹¹ , R ²¹ and R ³¹ include alkyl groups, alkenyl groups, alkynyl groups, aromatic hydrocarbon groups, and aromatic heterocyclic groups from the viewpoint of delocalizing positive charges. Among them, an aromatic hydrocarbon group or an aromatic heterocyclic group is preferable because it delocalizes positive charges and is thermally stable.

  The alkyl group includes, for example, a linear, branched or cyclic alkyl group having a carbon number of usually 1 or more and usually 12 or less, preferably 6 or less. Specific examples include methyl group, ethyl group, n-propyl group, 2-propyl group, n-butyl group, isobutyl group, tert-butyl group, cyclohexyl group and the like.

  Examples of the alkenyl group include those having usually 2 or more, usually 12 or less, preferably 6 or less carbon atoms. Specific examples include a vinyl group, an allyl group, and a 1-butenyl group.

  Examples of the alkynyl group include those having usually 2 or more, usually 12 or less, preferably 6 or less. Specific examples include ethynyl group and propargyl group.

  Examples of the aromatic hydrocarbon group include a monovalent group derived from a 5- or 6-membered monocyclic ring or a 2 to 5 condensed ring, and a group in which a positive charge is delocalized on the group. . Specific examples thereof include monovalent groups derived from a benzene ring, naphthalene ring, anthracene ring, phenanthrene ring, perylene ring, tetracene ring, pyrene ring, benzpyrene ring, chrysene ring, triphenylene ring, acenaphthene ring, fluorene ring, and the like. Can be mentioned.

  Examples of the aromatic heterocyclic group include a monovalent group derived from a 5- or 6-membered monocyclic ring or a 2-4 condensed ring, and a group in which a positive charge is delocalized on the group. . Specific examples thereof include furan ring, benzofuran ring, thiophene ring, benzothiophene ring, pyrrole ring, pyrazole ring, triazole ring, imidazole ring, oxadiazole ring, indole ring, carbazole ring, pyrroloimidazole ring, pyrrolopyrazole ring, Pyrrolopyrrole ring, thienopyrrole ring, thienothiophene ring, furopyrrole ring, furofuran ring, thienofuran ring, benzisoxazole ring, benzisothiazole ring, benzimidazole ring, pyridine ring, pyrazine ring, pyridazine ring, pyrimidine ring, triazine ring, quinoline And monovalent groups derived from a ring, an isoquinoline ring, a sinoline ring, a quinoxaline ring, a phenanthridine ring, a benzimidazole ring, a perimidine ring, a quinazoline ring, a quinazolinone ring, an azulene ring, and the like.

In the above formulas (II-1) to (II-3), R ¹² , R ²² , R ²³ and R ^{32 to} R ³⁴ each independently represents an arbitrary substituent. Accordingly, the types of R ¹² , R ²² , R ²³ and R ^{32 to} R ³⁴ are not particularly limited as long as they are not contrary to the spirit of the present invention.
The molecular weights of R ¹² , R ²² , R ²³ and R ^{32 to} R ³⁴ are each a value including the substituent, and are usually 1000 or less, preferably 500 or less.

Examples of R ¹² , R ²² , R ²³ and R ^{32 to} R ³⁴ are alkyl groups, alkenyl groups, alkynyl groups, aromatic hydrocarbon groups, aromatic heterocyclic groups, amino groups, alkylamino groups, arylamino groups. , Acylamino group, alkoxy group, aryloxy group, acyl group, alkoxycarbonyl group, aryloxycarbonyl group, alkylcarbonyloxy group, alkylthio group, arylthio group, sulfonyl group, alkylsulfonyl group, arylsulfonyl group, sulfonyloxy group, cyano Group, hydroxyl group, thiol group, silyl group and the like. Among them, like R ¹¹ , R ^21, and R ³¹ , an organic group having a carbon atom at the bond portion with A ^{1 to} A ³ is preferable from the viewpoint of high electron acceptability. Examples include an alkyl group, an alkenyl group, Alkynyl groups, aromatic hydrocarbon groups, and aromatic heterocyclic groups are preferred. In particular, an aromatic hydrocarbon group or an aromatic heterocyclic group is preferable because it has a large electron accepting property and is thermally stable.

Examples of the alkyl group, alkenyl group, alkynyl group, aromatic hydrocarbon group and aromatic heterocyclic group are the same as those described above for R ¹¹ , R ²¹ and R ³¹ .

As described above, the groups exemplified as R ¹¹ , R ²¹ , R ³¹ , R ¹² , R ²² , R ²³ , and R ^{32 to} R ³⁴ are further substituted with other substituents unless they are contrary to the spirit of the present invention. It may be. The type of the substituent is not particularly limited, and examples thereof include a halogen atom in addition to the groups exemplified as R ¹¹ , R ²¹ , R ³¹ , R ¹² , R ²² , R ²³ , and R ^{32 to} R ³⁴ . A cyano group, a thiocyano group, a nitro group, etc. are mentioned. Among these, an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, an aryloxy group, an aromatic hydrocarbon group, and an aromatic heterocyclic group are preferable from the viewpoint of not hindering heat resistance and electron accepting property. In addition, the substituent to be further substituted may be substituted with only one, or two or more may be substituted with any combination and ratio.

In the formulas (II-1) to (II-3), two or more adjacent groups out of R ^{11 to} R ³⁴ may be bonded to each other to form a ring.

In formulas (II-1) to (II-3), A ^{1 to} A ³ are all elements from the third period (third to sixth periods) of the periodic table, and A ¹ is a long-period type An element belonging to Group 17 of the periodic table is represented, A ² represents an element belonging to Group 16 and A ³ represents an element belonging to Group 15.

Among these, from the viewpoint of electron acceptability and availability, elements before the fifth period (third to fifth periods) of the periodic table are preferable. That is, A ¹ is preferably any ^one of an iodine atom, a bromine atom, and a chlorine atom, A ² is preferably any one of a tellurium atom, a selenium atom, and a sulfur atom, and A ³ is preferably an antimony atom, an arsenic atom, Any of the phosphorus atoms is preferred.

In particular, from the viewpoints of electron acceptability and compound stability, a compound in which A ¹ in formula (II-1) is a bromine atom or an iodine atom, or A ² in formula (II-2) is a selenium atom or a sulfur atom. Of these, a compound in which A ¹ in Formula (II-1) is an iodine atom is particularly preferable.

In formulas (II-1) to (II-3), Z ₁ ^{n1- to} Z ₃ ^n3- each independently represents a counter anion. The type of the counter anion is not particularly limited, and may be a monoatomic ion or a complex ion. However, the larger the size of the counter anion, the more the negative charge is delocalized, and the positive charge is also delocalized thereby increasing the electron accepting ability. Therefore, the complex ion is preferable to the monoatomic ion.

In formulas (II-1) to (II-3), n _{1 to} n ₃ are each independently any positive integer corresponding to the ionic valence of counter anions Z ₁ ^{n1 to} Z ₃ ⁿ³⁻ . The values of n _{1 to} n ₃ are not particularly limited, but all are preferably 1 or 2, and particularly preferably 1.

Specific examples of Z ₁ ^{n1- to} Z ₃ ^n3- include hydroxide ion, fluoride ion, chloride ion, bromide ion, iodide ion, cyanide ion, nitrate ion, nitrite ion, sulfate ion, sulfite. Ion, perchlorate ion, perbromate ion, periodate ion, chlorate ion, chlorite ion, hypochlorite ion, phosphate ion, phosphite ion, hypophosphite ion, borate ion , Isocyanate ion, hydrosulfide ion, tetrafluoroborate ion, hexafluorophosphate ion, hexachloroantimonate ion; carboxylate ion such as acetate ion, trifluoroacetate ion, benzoate ion; methanesulfonate ion, trifluoro Sulfonate ions such as romethanesulfonate ion; Alkoxy ions such as methoxy ion and t-butoxy ion For example.

In particular, the counter anions Z ₁ ^{n1 to} Z ₃ ⁿ³ are preferably complex ions represented by the following formulas (II-4) to (II-6) from the viewpoint of the stability of the compound and the solubility in a solvent. In view of the large size, the negative charge is delocalized, and the positive charge is also delocalized to increase the electron accepting ability. Therefore, a complex ion represented by the following formula (II-6) is more preferable.

In formulas (II-4) and (II-6), E ¹ and E ³ each independently represents an element belonging to Group 13 of the long-period periodic table. Of these, a boron atom, an aluminum atom, and a gallium atom are preferable, and a boron atom is preferable from the viewpoint of stability of the compound and ease of synthesis and purification.

In formula (II-5), E ² represents an element belonging to Group 15 of the long-period periodic table. Among these, a phosphorus atom, an arsenic atom and an antimony atom are preferable, and a phosphorus atom is preferable from the viewpoint of stability of the compound, ease of synthesis and purification, and toxicity.

  In the formulas (II-4) and (II-5), X represents a halogen atom such as a fluorine atom, a chlorine atom, or a bromine atom, and is a fluorine atom in terms of stability of the compound, ease of synthesis and purification, A chlorine atom is preferable, and a fluorine atom is particularly preferable.

In formula (II-6), Ar ^{61 to} Ar ⁶⁴ each independently represents an aromatic hydrocarbon group or an aromatic heterocyclic group. Examples of the aromatic hydrocarbon group and aromatic heterocyclic group are derived from the same 5- or 6-membered monocyclic ring or 2-4 condensed ring as those exemplified above for R ¹¹ , R ²¹ and R ³¹ . A monovalent group is mentioned. Among these, a monovalent group derived from a benzene ring, a naphthalene ring, a pyridine ring, a pyrazine ring, a pyridazine ring, a pyrimidine ring, a triazine ring, a quinoline ring, or an isoquinoline ring is preferable from the viewpoint of stability and heat resistance of the compound.

The aromatic hydrocarbon group and aromatic heterocyclic group exemplified as Ar ^{61 to} Ar ⁶⁴ may be further substituted with another substituent as long as not departing from the gist of the present invention. The type of the substituent is not particularly limited, and any substituent can be applied, but an electron-withdrawing group is preferable.

Examples of preferable electron-withdrawing groups as the substituent that Ar ^{61 to} Ar ⁶⁴ may have include halogen atoms such as fluorine atom, chlorine atom and bromine atom; cyano group; thiocyano group; nitro group; mesyl group Alkylsulfonyl groups such as tosyl group; arylsulfonyl groups such as tosyl group; acyl groups such as formyl group, acetyl group, benzoyl group and the like, usually having 1 or more, usually 12 or less, preferably 6 or less; methoxycarbonyl group, ethoxycarbonyl An alkoxycarbonyl group having 2 or more carbon atoms, usually 10 or less, preferably 7 or less; a phenoxycarbonyl group, a pyridyloxycarbonyl group or the like, and usually having 3 or more carbon atoms, preferably 4 or more and usually 25 or less. An aryloxycarbonyl group having an aromatic hydrocarbon group or an aromatic heterocyclic group of preferably 15 or less; Bonyl group; aminosulfonyl group; trifluoromethyl group, pentafluoroethyl group, etc., a fluorine atom in a linear, branched or cyclic alkyl group having usually 1 or more, usually 10 or less, preferably 6 or less carbon atoms And a haloalkyl group substituted with a halogen atom such as a chlorine atom.

Especially, it is more preferable that at least one group among Ar ^{61 to} Ar ⁶⁴ has one or two or more fluorine atoms or chlorine atoms as substituents. In particular, it is particularly a perfluoroaryl group in which all the hydrogen atoms of Ar ^{61 to} Ar ⁶⁴ are substituted with fluorine atoms from the viewpoint of efficiently delocalizing negative charges and having a suitable sublimation property. preferable. Specific examples of the perfluoroaryl group include a pentafluorophenyl group, a heptafluoro-2-naphthyl group, and a tetrafluoro-4-pyridyl group.
In addition, as for the said substituent, only one may be substituted and two or more may be substituted by arbitrary combinations and ratios.

  The formula amount of the complex ions represented by the formulas (II-4) to (II-6) is arbitrary as long as the effect of the present invention is not significantly impaired, but is usually 100 or more, preferably 300 or more, more preferably 400 or more. Moreover, it is usually 5000 or less, preferably 3000 or less, more preferably 2000 or less. If the formula amount of the complex ion is too small, delocalization of the positive charge and the negative charge is insufficient, so that the electron accepting ability may be decreased, and if the formula amount of the complex ion is too large, The compound itself may interfere with charge transport.

  As the material for the hole injection layer, any one of the various electron-accepting compounds described above may be used alone, or two or more may be used in any combination and ratio. When two or more kinds of electron-accepting compounds are used, two or more kinds of electron-accepting compounds corresponding to any one of the formulas (II-1) to (II-3) may be combined. Two or more electron-accepting compounds corresponding to different formulas may be combined.

  The content of the electron-accepting compound in the hole-injecting layer 3 and the composition for the hole-injecting layer is arbitrary as long as the effect of the present invention is not significantly impaired, but is a value with respect to the polymer and the hole-transporting compound described later. The amount is usually 0.1% by weight or more, preferably 1% by weight or more, and usually 100% by weight or less, preferably 60% by weight or less, more preferably 50% by weight or less. A larger amount of the electron-accepting compound is preferable because it is easier to insolubilize, and the heating time can be insolubilized in a short time. In addition, when using together 2 or more types of electron-accepting compounds, it is made for the total content of these to be contained in the said range.

  In addition, when the hole injection layer 3 is formed or after the formation, the above hole transporting polymer or the following hole transporting compound reacts with the electron accepting compound, so that the hole injection after the formation is performed. In the layer 3, a cation radical and an ionic compound of a hole transporting polymer or a hole transporting compound may be generated.

<3-3-1-3. Low molecular weight hole transport compound>
As a material for the hole injection layer, it is preferable to use a low molecular weight hole transporting compound as necessary.
The low molecular weight hole transporting compound can be appropriately selected from various compounds conventionally used as a hole injection / transport thin film purification material in an organic EL device. Among them, those having high solvent solubility are preferable.

  Preferable examples of the low molecular weight hole transporting compound include aromatic amine compounds. Of these, aromatic tertiary amine compounds are particularly preferred.

  The molecular weight of the low molecular weight hole transporting compound is arbitrary as long as the effect of the present invention is not significantly impaired, but is usually 200 or more, preferably 400 or more, more preferably 600 or more, and usually 5000 or less, preferably Is not more than 3000, more preferably not more than 2000, still more preferably not more than 1700, particularly preferably not more than 1400. If the molecular weight is too small, the heat resistance tends to be low, whereas if the molecular weight of the low molecular weight hole transporting compound is too large, synthesis and purification tend to be difficult.

  In addition, a low molecular weight hole transportable compound may use only 1 type, and may use 2 or more types together by arbitrary combinations and a ratio.

<3-3-1-4. Other ingredients>
As a material for the hole injection layer, in addition to the above-described polymer, electron-accepting compound and hole-transporting compound, other components may be further contained unless the effects of the present invention are significantly impaired. Examples of other components include various light emitting materials, electron transporting compounds, binder resins, coatability improving agents, and the like. In addition, only 1 type may be used for another component and it may use 2 or more types together by arbitrary combinations and ratios.

<3-3-2. Formation of hole injection layer>
When the hole injection layer 3 is formed by the wet film formation method according to the present invention, a coating composition is prepared by dissolving the above materials in an appropriate solvent, and the film formation process and the drying process are performed using the composition. Formed by going through. At this time, the drying process is performed within 15 minutes after the film forming process is completed. These details are described in [1. The contents are the same as those described in the section of “Wet deposition method”. In the case where the other organic layer is formed by the wet film forming method according to the present invention, the hole injection layer 3 is formed by the above-described [2. You may use the vapor deposition method demonstrated in the column of the vapor deposition method, or another method. Hereinafter, the wet film forming method according to the present invention will be described.

  As the hole injection layer solvent to be contained in the composition for hole injection layer, any solvent can be used as long as the hole injection layer 3 can be formed. However, among the aforementioned polymers, electron-accepting compounds, and low-molecular-weight hole-transporting compounds, those capable of dissolving at least one, particularly two or more, and particularly all three are preferable. Specifically, the solubility of the polymer is usually 0.005% by weight or more, particularly 0.5% by weight or more, particularly 1% by weight or more at room temperature and normal pressure. It is preferable to dissolve 0.001% by weight or more, especially 0.1% by weight or more, particularly 0.2% by weight or more.

  In addition, as the solvent for the hole injection layer, a polymer, an electron-accepting compound, a low-molecular-weight hole-transporting compound, and an inactive substance that can deactivate a free carrier (cation radical) generated from a mixture thereof, or A solvent that does not contain a substance that generates a deactivating substance is preferred.

  Suitable examples of the solvent for the hole injection layer include [1. This is the same as that described in the “Wet deposition method”. However, aromatic hydrocarbon solvents such as benzene, toluene, and xylene have a low ability to dissolve the oxidant and the polymer, and are therefore preferably used in a mixture with an ether solvent and an ester solvent.

  The ratio of the hole injection layer solvent to the hole injection layer composition is arbitrary as long as the effects of the present invention are not significantly impaired, but is usually 10% by weight or more, preferably 30% by weight or more, more preferably 50%. It is in the range of not less than weight, usually not more than 99.999% by weight, preferably not more than 99.99% by weight, and more preferably not more than 99.9% by weight. In addition, when mixing and using 2 or more types of solvents as a solvent for positive hole injection layers, it is made for the sum total of these solvents to satisfy | fill this range.

  After the application / film formation of the composition for hole injection layer, the resulting coating film is dried and the solvent for hole injection layer is removed to form a hole injection layer. The method of the wet film formation method is not limited as long as the effects of the present invention are not significantly impaired, and [1. Any method described in the section of “wet film formation method” can be used.

  The drying method is not particularly limited, and [1. This is the same as the method described in the “Wet film formation method”.

  The thickness of the hole injection layer 3 is arbitrary as long as the effect of the present invention is not significantly impaired, but is usually 5 nm or more, preferably 10 nm or more, and usually 1000 nm or less, preferably 500 nm or less.

<3-4. Light emitting layer>
A light emitting layer 4 is provided on the hole injection layer 3 as an organic layer according to the present invention. The light emitting layer 4 is excited by recombination of holes injected from the anode 2 through the hole injection layer 3 and electrons injected from the cathode 6 through the electron injection layer 5 between the electrodes to which an electric field is applied. , Which is the main light-emitting layer.

<3-4-1. Light emitting layer material>
The light emitting layer 4 contains at least a material having a light emitting property (light emitting material) as a constituent material, and preferably a compound having a hole transporting property (hole transporting compound) or an electron transport. A compound (electron transporting compound) having the following properties: There is no particular limitation on the light-emitting substance, and a substance that emits light at a desired emission wavelength and has high emission efficiency may be used. Moreover, it is preferable to contain two or more charge transport compounds. Furthermore, the light emitting layer 4 may contain other components as long as the effects of the present invention are not significantly impaired. In addition, when forming the light emitting layer 4 with a wet film-forming method, it is preferable to use a low molecular weight material in any case.

<3-4-1-1. Luminescent material>
Any known material can be applied as the light emitting material. For example, a fluorescent material or a phosphorescent material may be used, but a phosphorescent material is preferable from the viewpoint of internal quantum efficiency.
For the purpose of improving the solubility in a solvent, it is preferable to reduce the symmetry and rigidity of the molecules of the luminescent material, or to introduce a lipophilic substituent such as an alkyl group.

Hereinafter, although the example of a fluorescent dye is mentioned among light emitting materials, a fluorescent dye is not limited to the following illustrations.
Examples of the fluorescent dye that gives blue light emission (blue fluorescent dye) include perylene, pyrene, anthracene, coumarin, p-bis (2-phenylethenyl) benzene, and derivatives thereof.
Examples of fluorescent dyes that give green light emission (green fluorescent dyes) include quinacridone derivatives and coumarin derivatives.
Examples of fluorescent dyes that give yellow light (yellow fluorescent dyes) include rubrene and perimidone derivatives.
Examples of fluorescent dyes that give red luminescence (red fluorescent dyes) include DCM (4- (dicyanomethylene) -2-methyl-6- (p-dimethylaminostyryl) -4H-pyran) compounds, benzopyran derivatives, rhodamine derivatives, benzoates. Examples thereof include thioxanthene derivatives and azabenzothioxanthene.

  Next, phosphorescent materials among the light emitting materials will be described. Examples of the phosphorescent material include an organometallic complex containing a metal selected from Groups 7 to 11 of the periodic table.

  Preferred examples of the metal selected from Groups 7 to 11 of the periodic table contained in the phosphorescent organometallic complex include ruthenium, rhodium, palladium, silver, rhenium, osmium, iridium, platinum, and gold. . Preferred examples of these organometallic complexes include compounds represented by the following formula (V) or formula (VI).

｛式（Ｖ）中、Ｍは金属を表わし、ｑは上記金属の価数を表わす。また、Ｌ及びＬ’は二座配位子を表わす。ｊは０、１又は２の数を表わす。｝

{In Formula (V), M represents a metal, and q represents the valence of the metal. L and L ′ represent bidentate ligands. j represents a number of 0, 1 or 2. }

｛式（VI）中、Ｍ⁷は金属を表わし、Ｔは炭素原子又は窒素原子を表わす。Ｒ⁹²〜Ｒ⁹⁵は、それぞれ独立に置換基を表わす。但し、Ｔが窒素原子の場合は、Ｒ⁹⁴及びＲ⁹⁵は無い。｝

{In Formula (VI), M ⁷ represents a metal, and T represents a carbon atom or a nitrogen atom. R ^{92 to} R ⁹⁵ each independently represents a substituent. However, when T is a nitrogen atom, R ⁹⁴ and R ⁹⁵ are absent. }

Hereinafter, the compound represented by the formula (V) will be described first.
In formula (V), M represents an arbitrary metal, and specific examples of preferable ones include the metals described above as metals selected from Groups 7 to 11 of the periodic table.

上記Ｌの部分構造において、環Ａ１”は、置換基を有していてもよい、芳香族炭化水素基又は芳香族複素環基を表わす。 In the formula (V), the bidentate ligand L represents a ligand having the following partial structure.

In the partial structure of L, ring A1 ″ represents an aromatic hydrocarbon group or an aromatic heterocyclic group which may have a substituent.

  Examples of the aromatic hydrocarbon group constituting the ring A1 ″ include a 5- or 6-membered monocyclic ring or a 2-5 condensed ring. Specific examples thereof include a benzene ring, a naphthalene ring, an anthracene ring, and a phenanthrene. And a monovalent group derived from a ring, a perylene ring, a tetracene ring, a pyrene ring, a benzpyrene ring, a chrysene ring, a triphenylene ring, an acenaphthene ring, a fluoranthene ring, and a fluorene ring.

  Examples of the aromatic heterocyclic group constituting the ring A1 ″ include a 5- or 6-membered monocyclic ring or a 2-4 condensed ring. Specific examples thereof include a furan ring, a benzofuran ring, a thiophene ring, and a benzoic ring. Thiophene ring, pyrrole ring, pyrazole ring, imidazole ring, oxadiazole ring, indole ring, carbazole ring, pyrroloimidazole ring, pyrrolopyrazole ring, pyrrolopyrrole ring, thienopyrrole ring, thienothiophene ring, furopyrrole ring, furofuran ring, thienofuran ring , Benzoisoxazole ring, benzoisothiazole ring, benzimidazole ring, pyridine ring, pyrazine ring, pyridazine ring, pyrimidine ring, triazine ring, quinoline ring, isoquinoline ring, cinnoline ring, quinoxaline ring, phenanthridine ring, benzimidazole ring , Perimidine ring, key Gelsolin ring, quinazolinone ring, and a monovalent group derived from azulene ring.

In the partial structure of L, ring A2 represents a nitrogen-containing aromatic heterocyclic group which may have a substituent.
Examples of the nitrogen-containing aromatic heterocyclic group constituting the ring A2 include a 5- or 6-membered monocyclic ring or a 2-4 condensed ring. Specific examples thereof include pyrrole ring, pyrazole ring, imidazole ring, oxadiazole ring, indole ring, carbazole ring, pyrroloimidazole ring, pyrrolopyrazole ring, pyrrolopyrrole ring, thienopyrrole ring, furopyrrole ring, thienofuran ring, benzoisoxazole Ring, benzoisothiazole ring, benzimidazole ring, pyridine ring, pyrazine ring, pyridazine ring, pyrimidine ring, triazine ring, quinoline ring, isoquinoline ring, quinoxaline ring, phenanthridine ring, benzimidazole ring, perimidine ring, quinazoline ring, And monovalent group derived from a quinazolinone ring.

Examples of the substituent that each ring A1 ″ or ring A2 may have include: a halogen atom such as a fluorine atom; an alkyl group such as a methyl group and an ethyl group; an alkenyl group such as a vinyl group; a methoxycarbonyl group and an ethoxy group Alkoxycarbonyl groups such as carbonyl groups; alkoxy groups such as methoxy groups and ethoxy groups; aryloxy groups such as phenoxy groups and benzyloxy groups; dialkylamino groups such as dimethylamino groups and diethylamino groups; diarylamino groups such as diphenylamino groups Carbazolyl group; acyl group such as acetyl group; haloalkyl group such as trifluoromethyl group; cyano group; aromatic hydrocarbon group such as phenyl group, naphthyl group, phenanthyl group and the like.
In addition, as for the said substituent, only 1 may be substituted and 2 or more may be substituted by arbitrary combinations and ratios.

In formula (V), bidentate ligand L ′ represents a ligand having at least one of the following partial structures. In the following formulae, “Ph” represents a phenyl group.

Among these, as L ′, the following ligands are preferable from the viewpoint of the stability of the complex.

  More preferred examples of the compound represented by the formula (V) include compounds represented by at least one of the following formulas (Va), (Vb) and (Vc).

{In Formula (Va), M ⁴ represents the same metal as M, w represents the valence of the metal, and ring A1 ″ represents an aromatic hydrocarbon group which may have a substituent. Ring A2 represents a nitrogen-containing aromatic heterocyclic group which may have a substituent.}

{In Formula (Vb), M ⁵ represents the same metal as M, w represents the valence of the metal, and ring A1 ″ represents an aromatic hydrocarbon group which may have a substituent or Represents an aromatic heterocyclic group, and ring A2 represents a nitrogen-containing aromatic heterocyclic group which may have a substituent.}

{In the formula (Vc), M ⁶ represents the same metal as M, w represents the valence of the metal, j represents 0, 1 or 2, ring A1 "and ring A1 'represent Each independently represents an optionally substituted aromatic hydrocarbon group or aromatic heterocyclic group, and ring A2 and ring A2 ′ are each independently a nitrogen-containing optionally substituted group. Represents an aromatic heterocyclic group.}

  In the above formulas (Va), (Vb) and (Vc), preferred examples of the ring A1 ″ and the ring A1 ′ include a phenyl group, a biphenyl group, a naphthyl group, an anthryl group, a thienyl group, a furyl group, a benzothienyl group, A benzofuryl group, a pyridyl group, a quinolyl group, an isoquinolyl group, a carbazolyl group, and the like can be given.

  In the above formulas (Va), (Vb) and (Vc), preferred examples of ring A2 and ring A2 ′ include pyridyl group, pyrimidyl group, pyrazyl group, triazyl group, benzothiazole group, benzoxazole group, and benzimidazole group. Quinolyl group, isoquinolyl group, quinoxalyl group, phenanthridyl group and the like.

  Examples of the substituent that the compound represented by any one of the formulas (Va), (Vb), and (Vc) may have include a halogen atom such as a fluorine atom; an alkyl group such as a methyl group and an ethyl group Alkenyl groups such as vinyl groups; alkoxycarbonyl groups such as methoxycarbonyl groups and ethoxycarbonyl groups; alkoxy groups such as methoxy groups and ethoxy groups; aryloxy groups such as phenoxy groups and benzyloxy groups; dimethylamino groups and diethylamino groups A diarylamino group such as a diphenylamino group; a carbazolyl group; an acyl group such as an acetyl group; a haloalkyl group such as a trifluoromethyl group; a cyano group and the like.

  The carbon number of the substituent is arbitrary as long as the effects of the present invention are not significantly impaired. However, when the substituent is an alkyl group, the carbon number is usually 1 or more and 6 or less. When the substituent is an alkenyl group, the carbon number is usually 2 or more and 6 or less. When the substituent is an alkoxycarbonyl group, the carbon number is usually 2 or more and 6 or less. Moreover, when a substituent is an alkoxy group, the carbon number is 1 or more and 6 or less normally. Moreover, when a substituent is an aryloxy group, the carbon number is 6 or more and 14 or less normally. Moreover, when a substituent is a dialkylamino group, the carbon number is 2 or more and 24 or less normally. Moreover, when a substituent is a diarylamino group, the carbon number is 12 or more and 28 or less normally. When the substituent is an acyl group, the carbon number is usually 1 or more and 14 or less. Moreover, when a substituent is a haloalkyl group, the carbon number is 1 or more and 12 or less normally.

  The above substituents may be linked to each other to form a ring. As a specific example, whether the substituent of the ring A1 ″ and the substituent of the ring A2 are bonded, or the substituent of the ring A1 ′ and the substituent of the ring A2 ′ are bonded, One condensed ring may be formed, and examples of such a condensed ring include a 7,8-benzoquinoline group.

  Among the substituents described above, the substituents of ring A1 ″, ring A1 ′, ring A2 and ring A2 ′ are more preferably alkyl groups, alkoxy groups, aromatic hydrocarbon groups, cyano groups, halogen atoms, haloalkyl groups. , Diarylamino group, and carbazolyl group. In addition, as for the substituents of ring A1 ″, ring A1 ′, ring A2 and ring A2 ′, only one may be substituted or two or more may be in any combination. And may be substituted with a ratio.

Further, the formula (Va), as preferred examples of M ⁴ ~M ⁶ in (Vb) and (Vc) include ruthenium, rhodium, palladium, silver, rhenium, osmium, iridium, platinum or gold.

  Specific examples of the organometallic complex represented by any one of the above formulas (V), (Va), (Vb) and (Vc) are shown below. However, it is not limited to the following compounds.

  Further, among the organometallic complexes represented by the above formula (V), in particular, as the ligand L and / or L ′, a 2-arylpyridine-based ligand (that is, 2-arylpyridine, an arbitrary substituent group) And a compound having an arbitrary group condensed thereto) are preferable.

  The compounds described in International Patent Publication No. 2005/019373 can also be used as the light emitting material.

Next, the compound represented by formula (VI) will be described.
In the formula (VI), M ⁷ represents a metal. Specific examples include the metals described above as the metal selected from Groups 7 to 11 of the periodic table. Among these, ruthenium, rhodium, palladium, silver, rhenium, osmium, iridium, platinum or gold is preferable, and divalent metals such as platinum and palladium are particularly preferable.

In the formula (VI), R ⁹² and R ⁹³ each independently represent a hydrogen atom, a halogen atom, an alkyl group, an aralkyl group, an alkenyl group, a cyano group, an amino group, an acyl group, an alkoxycarbonyl group, a carboxyl group, It represents at least one selected from the group consisting of an alkoxy group, an alkylamino group, an aralkylamino group, a haloalkyl group, a hydroxyl group, an aryloxy group, an aromatic hydrocarbon group, and an aromatic heterocyclic group. Each R ⁹² and R ⁹³ may be the same or different.

Further, in the formula (VI), when T is a carbon atom, R ⁹⁴ and R ⁹⁵ each independently represent a substituent represented by the same examples as R ⁹² and R ⁹³ . Further, in the formula (VI), when T is a nitrogen atom, R ⁹⁴ and R ⁹⁵ are absent. Each T may be the same or different.

In the formula (VI), R ^{92 to} R ⁹⁵ may further have a substituent. When it has a substituent, there is no restriction | limiting in particular in the kind, Arbitrary groups can be made into a substituent. Moreover, as for the substituent, only 1 may be substituted and 2 or more may be substituted by arbitrary combinations and ratios.
Furthermore, in the formula (VI), any two or more groups of R ^{92 to} R ⁹⁵ may be connected to each other to form a ring.

  Specific examples (T-1 to T-8) of the organometallic complex represented by the formula (VI) are shown below. However, it is not limited to the following examples. In the following chemical formulae, Me represents a methyl group, and Et represents an ethyl group.

  The molecular weight of the compound used as the light emitting material is arbitrary as long as the effect of the present invention is not significantly impaired, but is usually 10,000 or less, preferably 5000 or less, more preferably 4000 or less, still more preferably 3000 or less, and usually 100 or more, Preferably it is 200 or more, More preferably, it is 300 or more, More preferably, it is the range of 400 or more. If the molecular weight is too small, the heat resistance is remarkably reduced, gas is generated, the film quality is deteriorated when the film is formed, or the morphology of the organic EL element is changed due to migration or the like. There is a case. On the other hand, if the molecular weight is too large, it tends to be difficult to purify the organic compound, or it may take time to dissolve in the solvent.

  In addition, any 1 type may be used for the luminescent material mentioned above, and 2 or more types may be used together by arbitrary combinations and a ratio.

  The ratio of the light emitting material in the light emitting layer 4 is arbitrary as long as the effect of the present invention is not significantly impaired, but is usually 0.05% by weight or more, preferably 0.3% by weight or more, more preferably 0.5% by weight or more. In addition, it is usually 35% by weight or less, preferably 25% by weight or less, and more preferably 20% by weight or less. If the amount of the light emitting material is too small, uneven light emission may occur. If the amount is too large, the light emission efficiency may be reduced. In addition, when using together 2 or more types of luminescent material, it is made for the total content of these to be contained in the said range.

(3-4-1-2. Hole transporting compound)
Further, the light emitting layer 4 may contain a hole transporting compound as a constituent material. Here, among examples of the hole transporting compound, examples of the low molecular weight hole transporting compound include the aforementioned <3-3-1-3. In addition to the various compounds exemplified in the column of low molecular weight hole transporting compound>, for example, two represented by 4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl Aromatic diamines containing the above tertiary amines and having two or more condensed aromatic rings substituted with nitrogen atoms (Japanese Patent Laid-Open No. 5-234861), 4,4 ′, 4 ″ -tris (1-naphthylphenylamino) Aromatic amine compounds having a starburst structure such as triphenylamine (Journal of Luminescence, 1997, Vol. 72-74, pp. 985), aromatic amine compounds composed of tetramers of triphenylamine (Chemical Communications, 1996, pp. 2175), 2,2 ′, 7,7′-tetrakis- (diphenylamino) -9. Spiro compounds such as 9′-spirobifluorene (Synthetic Metals, 1997, Vol. 91, pp. 209), etc. In the light emitting layer 4, only one kind of hole transporting compound is used. Two or more kinds may be used in any combination and ratio.

  The proportion of the hole transporting compound in the light emitting layer 4 is arbitrary as long as the effect of the present invention is not significantly impaired, but is usually 0.1% by weight or more, preferably 0.5% by weight or more, more preferably 1% by weight. In addition, it is usually 65% by weight or less, preferably 50% by weight or less, and more preferably 40% by weight or less. If the amount of the hole transporting compound is too small, it may be easily affected by a short circuit, and if it is too large, the film thickness may be uneven. In addition, when using together 2 or more types of hole transportable compounds, it is made for the total content of these to be contained in the said range.

(3-4-1-3. Electron transporting compound)
The light emitting layer 4 may contain an electron transporting compound as a constituent material. Here, among the electron transporting compounds, examples of low molecular weight electron transporting compounds include 2,5-bis (1-naphthyl) -1,3,4-oxadiazole (BND), 2,5, -Bis (6 '-(2', 2 "-bipyridyl))-1,1-dimethyl-3,4-diphenylsilole (PyPySPyPy), bathophenanthroline (BPhen), 2,9-dimethyl-4,7 -Diphenyl-1,10-phenanthroline (BCP, bathocuproin), 2- (4-biphenylyl) -5- (p-tertiarybutylphenyl) -1,3,4-oxadiazole (tBu-PBD), 4 , 4′-bis (9-carbazole) -biphenyl (CBP), etc. In the light-emitting layer 4, only one type of electron transporting compound may be used, or two or more types may be combined arbitrarily. It may be used in combination with not proportion.

  The ratio of the electron transporting compound in the light emitting layer 4 is arbitrary as long as the effect of the present invention is not significantly impaired, but is usually 0.1% by weight or more, preferably 0.5% by weight or more, more preferably 1% by weight or more. In addition, it is usually 65% by weight or less, preferably 50% by weight or less, and more preferably 40% by weight or less. If the amount of the electron transporting compound is too small, it may be easily affected by a short circuit, and if it is too large, the film thickness may be uneven. In addition, when using together 2 or more types of electron transport compounds, it is made for the total content of these to be contained in the said range.

<3-4-2. Formation of light emitting layer>
When the light emitting layer 4 is formed by the wet film forming method according to the present invention, a coating composition is prepared by dissolving the above materials in an appropriate solvent, and a film forming process and a drying process are performed using the composition. To form. At this time, the drying process is performed within 15 minutes after the film forming process is completed. These details are described in [1. The contents are the same as those described in the section of “Wet deposition method”. In the case where the other organic layer is formed by the wet film forming method according to the present invention, the light emitting layer 4 is formed by the above-described [2. The vapor deposition method described in the column of “Vapor deposition method” or other methods may be used, but among these, the wet film formation method according to the present invention is preferable. Hereinafter, the wet film forming method according to the present invention will be described.

  As the light emitting layer solvent to be contained in the coating composition for producing the light emitting layer, any solvent can be used as long as the light emitting layer can be formed. However, those capable of dissolving the light-emitting material, the hole transporting compound, and the electron transporting compound described above are preferable. Specifically, the solubility of the light-emitting material, the hole transporting compound or the electron transporting compound is usually 0.01% by weight or more, particularly 0.05% by weight or more, particularly 0.1% at room temperature and normal pressure. It is preferable to dissolve by weight% or more.

  Suitable examples of the solvent for the light emitting layer include [1. It is the same as the solvent described in the “Wet film formation method”.

  The ratio of the solvent for the light emitting layer to the coating composition for producing the light emitting layer is arbitrary as long as the effect of the present invention is not significantly impaired, but is usually 0.01% by weight or more, preferably 0.1% by weight or more. More preferably, it is 0.5% by weight or more, usually 70% by weight or less, preferably 60% by weight or less, and more preferably 50% by weight or less. In addition, when mixing and using 2 or more types of solvents as a solvent for light emitting layers, it is made for the sum total of these solvents to satisfy | fill this range.

  After application / film formation of the coating composition for producing the light emitting layer, the obtained coating film is dried and the light emitting layer solvent is removed to form the light emitting layer. The method of the wet film formation method is not limited as long as the effects of the present invention are not significantly impaired, and [1. Any method described in the section of “wet film formation method” can be used.

  The drying method is not particularly limited, and [1. This is the same as the method described in the “Wet film formation method”.

  The film thickness of the light emitting layer 4 is arbitrary as long as the effect of the present invention is not significantly impaired, but is usually 3 nm or more, preferably 5 nm or more, and usually 200 nm or less, preferably 100 nm or less. If the thickness of the light emitting layer 4 is too thin, defects may occur in the film, and if it is too thick, the driving voltage may increase.

<3-5. Electron injection layer>
The electron injection layer 5 plays a role of efficiently injecting electrons injected from the cathode 6 into the light emitting layer 4. In order to perform electron injection efficiently, the material for forming the electron injection layer 5 is preferably a metal having a low work function. Examples include alkali metals such as sodium and cesium, and alkaline earth metals such as barium and calcium. The film thickness is usually preferably from 0.1 nm to 5 nm.

Furthermore, an organic electron transport compound represented by a metal complex such as a nitrogen-containing heterocyclic compound such as bathophenanthroline or an aluminum complex of 8-hydroxyquinoline is doped with an alkali metal such as sodium, potassium, cesium, lithium, or rubidium ( (As described in JP-A-10-270171, JP-A-2002-1000047, JP-A-2002-1000048, etc.), it is possible to improve the electron injection / transport properties and achieve excellent film quality. preferable. In this case, the film thickness is usually 5 nm or more, preferably 10 nm or more, and is usually 200 nm or less, preferably 100 nm or less.
In addition, the material of the electron injection layer 5 may use only 1 type, and may use 2 or more types together by arbitrary combinations and a ratio.

  There is no restriction | limiting in the formation method of the electron injection layer 5. FIG. Therefore, the above-mentioned material is replaced with the above-mentioned [1. Wet film formation method described in [Wet film formation method] and [2. It can form by laminating | stacking on the light emitting layer 4 by the vapor deposition method demonstrated by the vapor deposition method], and another method.

<3-6. Cathode>
The cathode 6 plays a role of injecting electrons into a layer on the light emitting layer 4 side (such as the electron injection layer 5 or the light emitting layer 4).
As the material of the cathode 6, the material used for the anode 2 can be used. However, in order to perform electron injection efficiently, a metal having a low work function is preferable, for example, tin, magnesium, indium, A suitable metal such as calcium, aluminum, silver, or an alloy thereof is used. Specific examples include low work function alloy electrodes such as magnesium-silver alloy, magnesium-indium alloy, and aluminum-lithium alloy. In addition, the material of the cathode 6 may use only 1 type, and may use 2 or more types together by arbitrary combinations and a ratio.

The film thickness of the cathode 6 is usually the same as that of the anode 2.
Further, for the purpose of protecting the cathode 6 made of a low work function metal, it is preferable to further stack a metal layer having a high work function and stable to the atmosphere because the stability of the device is increased. For this purpose, for example, metals such as aluminum, silver, copper, nickel, chromium, gold and platinum are used. In addition, these materials may be used only by 1 type and may use 2 or more types together by arbitrary combinations and a ratio.

<3-7. Other layers>
As described above, the organic EL element having the layer configuration shown in FIG. 1 has been mainly described. However, the organic EL element of the present invention may have another configuration without departing from the gist thereof. For example, as long as the performance is not impaired, an arbitrary layer may be provided between the anode 2 and the cathode 6 in addition to the layers described above, and an arbitrary layer may be omitted. .

<3-7-1. Hole transport layer>
FIG. 2 is a cross-sectional view schematically showing another example of the structure of the organic EL element of the present invention. 2, the same components as those in FIG. 1 are denoted by the same reference numerals, and the description thereof is omitted.

  An organic EL element 10b shown in FIG. 2 includes a hole transport layer 7 between the hole injection layer 3 and the light emitting layer 4 in addition to the same configuration as the organic EL element 10a shown in FIG. In the case of this configuration, the hole transport layer 7 corresponds to an organic layer formed on the hole injection layer 3.

  Examples of the material for forming the hole transport layer 7 include the same compounds as those exemplified as the hole transport compound that may be used by mixing with the hole injection layer 3. In addition, for example, polymer materials such as polyarylene ether sulfone containing polyvinyl carbazole, polyvinyl triphenylamine, and tetraphenylbenzidine can be used. In addition, the material of the positive hole transport layer 7 may use only 1 type, and may use 2 or more types together by arbitrary combinations and a ratio.

  When forming the hole transport layer 7 by the wet film-forming method according to the present invention, a coating composition is prepared by dissolving the above-described material in an appropriate organic layer solvent, and a film-forming process is performed using the composition. It forms by passing through a drying process. At this time, the drying process is performed within 15 minutes after the film forming process is completed. These details are described in [1. The contents are the same as those described in the section of “Wet deposition method”. In addition, when forming another organic layer by the wet film-forming method according to the present invention, the formation of the hole transport layer 7 is performed in the above [2. You may use the vapor deposition method demonstrated in the column of the vapor deposition method, or another method. Hereinafter, the wet film forming method according to the present invention will be described.

  As the hole transport layer solvent to be contained in the coating composition for producing the hole transport layer, any solvent can be used as long as the hole injection layer can be formed. However, those capable of dissolving the above-described hole transporting compound and polymer material are preferable.

  Moreover, as a solvent for hole transport layers, a deactivated substance or a deactivated substance that may deactivate a polymer, an electron accepting compound, a hole transporting compound, and a free carrier (cation radical) generated from a mixture thereof. Solvents that do not contain those that generate are preferred.

  After the coating composition for producing the hole transport layer is applied and formed, the obtained coating film is dried and the hole transport layer solvent is removed to form the hole transport layer. The method of the wet film formation method is not limited as long as the effects of the present invention are not significantly impaired, and [1. Any method described in the section of “wet film formation method” can be used.

  The drying method is not particularly limited, and [1. This is the same as the method described in the “Wet film formation method”.

  The thickness of the hole transport layer 7 is arbitrary as long as the effect of the present invention is not significantly impaired, but is usually 10 nm or more, preferably 30 nm or more, and usually 300 nm or less, preferably 100 nm or less.

<3-7-2. Electron blocking layer>
FIG. 3 is a cross-sectional view schematically showing another example of the structure of the organic EL element of the present invention. In FIG. 3, the same components as those in FIG. 1 are denoted by the same reference numerals, and the description thereof is omitted. The organic EL element 10c shown in FIG. 3 includes an electron blocking layer 8 between the hole injection layer 3 and the light emitting layer 4 in addition to the same configuration as the organic EL element 10a shown in FIG. In the case of this configuration, the electron blocking layer 8 corresponds to an organic layer formed on the hole injection layer 3.

  The electron blocking layer 8 is generated by preventing electrons moving from the light emitting layer 4 from reaching the hole injection layer 3, thereby increasing the recombination probability of holes and electrons in the light emitting layer 4. There are a role of confining excitons in the light emitting layer 4 and a role of efficiently transporting holes injected from the hole injection layer 3 in the direction of the light emitting layer 4. In particular, it is effective when a phosphorescent material or a blue light emitting material is used as the light emitting material.

  The characteristics required for the electron blocking layer 8 include high hole transportability, a large energy gap (difference between HOMO and LUMO), and a high excited triplet level (T1). Furthermore, in the present invention, when the light emitting layer 4 is formed as the organic layer according to the present invention by a wet film formation method, the electron blocking layer 8 is also required to be compatible with the wet film formation. Examples of the material used for the electron blocking layer 8 include a copolymer of dioctylfluorene and triphenylamine typified by F8-TFB (described in International Publication No. 2004/084260). In addition, the material of the electron blocking layer 8 may use only 1 type, and may use 2 or more types together by arbitrary combinations and a ratio.

  There is no restriction | limiting in the formation method of the electron blocking layer 8. FIG. Therefore, the above-mentioned material is replaced with the above-mentioned [1. Wet film formation method described in [Wet film formation method] and [2. It can be formed by laminating on the hole injection layer 3 by the vapor deposition method described in [Vapor Deposition Method] or other methods.

<3-7-3. Electron transport layer>
As described above, in addition to the configurations described with reference to FIGS. 1 to 3, various modifications can be considered as the configuration of the organic EL element of the present invention.
For example, an electron transport layer may be provided between the light emitting layer 4 and the electron injection layer 5. The electron transport layer is provided for the purpose of further improving the light emission efficiency of the device, and can efficiently transport electrons injected from the cathode 6 between the electrodes to which an electric field is applied in the direction of the light emitting layer 4. Formed from a compound that can be formed.

  As the electron transporting compound used for the electron transport layer, usually, the electron injection efficiency from the cathode 6 or the electron injection layer 5 is high, and the injected electrons having high electron mobility can be efficiently transported. Use possible compounds. Examples of the compound satisfying such conditions include metal complexes such as aluminum complexes of 8-hydroxyquinoline (Japanese Patent Laid-Open No. 59-194393), metal complexes of 10-hydroxybenzo [h] quinoline, oxadiazole derivatives , Distyrylbiphenyl derivatives, silole derivatives, 3-hydroxyflavone metal complexes, 5-hydroxyflavone metal complexes, benzoxazole metal complexes, benzothiazole metal complexes, trisbenzimidazolylbenzene (US Pat. No. 5,645,948), quinoxaline compounds ( JP-A-6-207169), phenanthroline derivative (JP-A-5-331459), 2-t-butyl-9,10-N, N'-dicyanoanthraquinonediimine, n-type hydrogenated amorphous silicon carbide , N-type zinc sulfide, n-type zinc Such as emissions of zinc, and the like. In addition, only 1 type may be used for the material of an electron carrying layer, and 2 or more types may be used together by arbitrary combinations and a ratio.

There is no restriction | limiting in the formation method of an electron carrying layer. Therefore, the above-mentioned material is replaced with the above-mentioned [1. Wet film formation method described in [Wet film formation method] and [2. It can be formed by the vapor deposition method described in [Vapor Deposition Method] or other methods.
The thickness of the electron transport layer is arbitrary as long as the effect of the present invention is not significantly impaired, but is usually 1 nm or more, preferably 5 nm or more, and usually 300 nm or less, preferably 100 nm or less.

<3-7-4. Hole blocking layer>
For example, a hole blocking layer may be provided between the light emitting layer 4 and the electron injection layer 5. The hole blocking layer is a layer laminated on the light emitting layer 4 so as to be in contact with the interface of the light emitting layer 4 on the cathode 6 side. The hole blocking layer has a role of blocking holes moving from the anode 2 from reaching the cathode 6 and a role of efficiently transporting electrons injected from the cathode 6 toward the light emitting layer 4. Have.

  The physical properties required for the material constituting the hole blocking layer include high electron mobility, low hole mobility, large energy gap (difference between HOMO and LUMO), and excited triplet level (T1). It is expensive. As a material for the hole blocking layer satisfying such conditions, for example, bis (2-methyl-8-quinolinolato), (phenolato) aluminum, bis (2-methyl-8-quinolinolato), (triphenylsilanolato) Mixed ligand complexes such as aluminum, metal complexes such as bis (2-methyl-8-quinolato) aluminum-μ-oxo-bis- (2-methyl-8-quinolinato) aluminum binuclear metal complexes, distyrylbiphenyl derivatives Styryl compounds such as JP-A-11-242996 and triazole derivatives such as 3- (4-biphenylyl) -4-phenyl-5 (4-tert-butylphenyl) -1,2,4-triazole Kaihei 7-41759) and phenanthroline derivatives such as bathocuproine (Japanese Patent Laid-Open No. 10-79297). It is. Furthermore, compounds having at least one pyridine ring substituted at the 2,4,6-positions described in International Publication No. 2005-022962 are also preferable as the material for the hole blocking layer. In addition, the material of a hole-blocking layer may use only 1 type, and may use 2 or more types together by arbitrary combinations and ratios.

There is no restriction | limiting in the formation method of a hole-blocking layer. Therefore, the above-mentioned material is replaced with the above-mentioned [1. Wet film formation method described in [Wet film formation method] and [2. It can be formed by the vapor deposition method described in [Vapor Deposition Method] or other methods.
The thickness of the hole blocking layer is arbitrary as long as the effect of the present invention is not significantly impaired, but is usually 0.3 nm or more, preferably 0.5 nm or more, and usually 100 nm or less, preferably 50 nm or less.

<3-8. Other>
For example, lithium fluoride (LiF), magnesium fluoride (MgF ₂ ), lithium oxide (Li ₂ O), cesium carbonate (II) (CsCO ₃ ) or the like at the interface between the cathode 6 and the light emitting layer 4 or the electron transport layer. Inserting the formed ultra-thin insulating film (0.1 to 5 nm) is also an effective method for improving the efficiency of the device (Applied Physics Letters, 1997, Vol. 70, pp. 152; No.-74586; see IEEE Transactions on Electron Devices, 1997, Vol. 44, pp. 1245; SID 04 Digest, pp. 154, etc.).

  Moreover, in the layer structure demonstrated above, it is also possible to laminate | stack components other than a board | substrate in reverse order. For example, in the layer configuration of FIG. 1, other components are provided on the substrate 1 in the order of the cathode 6, the electron injection layer 5, the light emitting layer 4, the hole injection layer 3, and the anode 2.

  Furthermore, the organic EL element of the present invention can be configured by laminating components other than the substrate between two substrates, at least one of which is transparent.

Further, a structure in which a plurality of components (light emitting units) other than the substrate are stacked in a plurality of layers (a structure in which a plurality of light emitting units are stacked) may be employed. In that case, instead of the interface layer between the steps (between the light emitting units) (when the anode is ITO and the cathode is Al, these two layers), for example, a charge made of vanadium pentoxide (V ₂ O ₅ ) or the like. When a generation layer (Carrier Generation Layer: CGL) is provided, a barrier between steps is reduced, which is more preferable from the viewpoint of light emission efficiency and driving voltage.

  Furthermore, the organic EL element of the present invention may be configured as a single organic EL element, or may be applied to a configuration in which a plurality of organic EL elements are arranged in an array, and the anode and cathode are X- You may apply to the structure arrange | positioned at Y matrix form.

In addition, each layer described above may contain components other than those described as materials as long as the effects of the present invention are not significantly impaired.
Furthermore, as long as the effects of the present invention are not significantly impaired, other steps may be performed before, after, and during each step in the above-described organic layer deposition step, drying step, pretreatment step, and cooling step. Good.

[4. Advantages of the present invention and mechanisms for obtaining the effects of the present invention]
According to the present invention, in a method for producing an organic EL element having an organic layer formed by a wet film forming method, a production method capable of obtaining a long-life element can be provided. By the production method of the present invention, a long-life organic EL element can be obtained, and the long-life organic EL element can be stably produced. Furthermore, the manufacturing method of the present invention can provide a homogeneous organic layer, and an element with little lot blurring of element characteristics (life, efficiency, chromaticity coordinates) can be obtained.

However, it is not clear why such an effect is obtained. The inventor infers this as follows.
The thin film immediately after the film-forming process by the wet film-forming method is in a liquid film state containing a solvent, and is generally allowed to stand for a certain time after the film-forming process to obtain the smoothness of the film. However, in the above liquid film state, it is very easy to absorb / diffuse moisture, and since the organic layer components (molecules) move in the liquid film, the film quality is easily influenced by the surrounding environment. It was difficult to control device characteristics.
Therefore, in the present invention, after the film formation process of the organic layer is completed, the effect of moisture on the organic layer is reduced by proceeding to the drying process at a more optimal interval, and an organic layer having a stable film quality is obtained. It is presumed that we succeeded in extending the length.

  EXAMPLES Hereinafter, although this invention is demonstrated further in detail using an Example, this invention is not limited to a following example, unless it deviates from the summary.

[Example]
<Example 1>
An organic EL device having the structure shown in FIG. 4 was produced by the following method. In FIG. 4, the same components as those in FIG. 1 are denoted by the same reference numerals.

(ITO substrate)
An indium tin oxide (ITO) transparent conductive film deposited on a glass substrate 1 having a thickness of 150 nm (sputtered film; sheet resistance 15 Ω) is formed into a 2 mm wide stripe using a normal photolithography technique and hydrochloric acid etching. The anode 2 was formed by patterning. The patterned ITO substrate was cleaned in the order of ultrasonic cleaning with an aqueous surfactant solution, water cleaning with ultrapure water, ultrasonic cleaning with ultrapure water, and water cleaning with ultrapure water, and then dried with compressed air. Finally, ultraviolet ozone cleaning was performed.

(Hole injection layer deposition)
Next, the hole injection layer 3 was formed by a wet film formation method as follows. The material of the hole injection layer is 2% by weight of a polymer having a repeating structure represented by the following formula (1) (weight average molecular mass 29400, number average molecular weight 12600, glass transition temperature 160 ° C.) and 4-isopropyl-4 as an oxidizing agent. A composition in which 0.8% by weight of '-methyldiphenyliodonium tetrakis (pentafluorophenyl) borate was dissolved in ethyl benzoate was prepared, and this composition was formed on the ITO substrate by spin coating. .
The spin coating was performed in two stages of spinner rotation speed of 500 rpm, 2 seconds, and 1500 rpm for 30 seconds, and the drying condition was performed at 230 ° C. for 3 hours to form a uniform thin film with a thickness of 30 nm.

(Light-emitting layer deposition)
Subsequently, the light emitting layer 4 was formed by a wet film forming method as follows. As the material of the light emitting layer, the compounds represented by the following formula (2), the following formula (3), and the following formula (4) are 1.5% by weight, 1.5% by weight, and 0.15% by weight, respectively. As described above, an organic EL device composition was prepared by dissolving in dehydrated xylene.

(Film formation process)
Using this composition for an organic EL device, the light emitting layer precursor was formed by spin coating on the thin film in an environment having a relative humidity of 56% and an oxygen volume concentration of 25%. The spin coating was performed under the two-stage conditions of a spinner rotation speed of 500 rpm for 2 seconds and then 1300 rpm for 30 seconds.

(Drying process)
The light emitting layer precursor was dried by heating at 130 ° C. under reduced pressure (1 × 10 ⁻¹ Pa) for 1 hour. The drying process was performed within 1 minute after the film formation process was completed.

(Cooling process)
Furthermore, the heat-dried thin film was cooled to room temperature under reduced pressure (1 × 10 ⁻¹ Pa) to form a thin film having a uniform film thickness of 80 nm.

(Hole blocking layer-sealing)
An ITO substrate having a hole injecting layer and a light emitting layer formed by a wet film forming method was placed in an environment having a relative humidity of 56% and an oxygen volume concentration of 25% for 60 minutes before performing the vapor deposition step.

Next, as the hole blocking layer 9a, a compound represented by the following formula (5) was laminated with a thickness of 5 nm at a crucible temperature of 265 to 270 ° C. and a deposition rate of 0.08 to 0.12 nm / second. The degree of vacuum at the time of vapor deposition was about 2.2 × 10 ⁻⁴ Pa.

Next, a compound represented by the following formula (6) was deposited in the same manner as the electron transport layer 9b on the hole blocking layer 9a. The crucible temperature of the aluminum 8-hydroxyquinoline complex at this time is controlled in the range of 360 to 400 ° C., the degree of vacuum during the deposition is about 1.4 × 10 ⁻⁴ Pa, and the deposition rate is 0.08 to 0.12 nm. The film thickness was 30 nm per second.
The substrate temperature when vacuum-depositing the hole blocking layer 9a and the electron transport layer 9b was kept at room temperature.

Here, the element which performed vapor deposition to the electron carrying layer 9b was once taken out from the inside of the said vacuum vapor deposition apparatus in air | atmosphere. A 2 mm wide stripe-shaped shadow mask was brought into close contact with the element so as to be orthogonal to the anode ITO stripe. It was placed in another vacuum vapor deposition apparatus and evacuated until the degree of vacuum in the apparatus was about 2.5 × 10 ⁻⁴ Pa or less.

Next, lithium fluoride (LiF) is deposited on the electron transport layer 9b as the electron injection layer 5, using a molybdenum boat, a deposition rate of 0.01 nm / second, and a degree of vacuum of about 2.6 × 10 ^−4. A film was formed on the electron transport layer at a thickness of 0.5 nm at Pa.

Next, aluminum is heated as a cathode 6 on the electron injection layer 5 by a molybdenum boat, and the deposition rate is 0.1 to 0.4 nm / second, and the degree of vacuum is about 3.0 × 10 ⁻⁴ Pa. The cathode 6 was completed by forming an aluminum layer having a thickness of 80 nm.
The substrate temperature at the time of vapor deposition of the electron injection layer 5 and the cathode 6 was kept at room temperature.
Finally, by sealing with glass, an organic EL element having a light emitting area portion of 2 mm × 2 mm in size was obtained.

<Example 2>
An organic EL device was produced in the same manner as in Example 1 except that the drying step was performed 15 minutes after the film formation step was completed.

<Example 3>
An organic EL device was produced in the same manner as in Example 1 except that the film forming step was performed in an environment with a relative humidity of 1 ppm and an oxygen volume concentration of 7 ppm.

<Example 4>
In Example 1, an ITO substrate having a hole injection layer 3 and a light emitting layer 4 formed by a wet film formation method was subjected to an environment of 1% relative humidity and 25% oxygen volume before performing the vapor deposition step. The organic EL device was produced in the same manner as in Example 1 except that the sample was left for 120 minutes.

<Example 5>
Before performing the vapor deposition process on the ITO substrate having the hole injection layer 3 and the light emitting layer 4 formed by the wet film formation method in Example 1, 120 minutes in an environment with a relative humidity of 1 ppm and an oxygen volume concentration of 1 ppm. An organic EL device was produced in the same manner as in Example 1 except for the above.

[Comparative example]
<Comparative Example 1>
In the drying process of Example 1, the drying process was performed 60 minutes after the completion of the film forming process.

<Comparative example 2>
Before carrying out the vapor deposition step, the ITO substrate having the hole injection layer 3 and the light emitting layer 4 formed by the wet film formation method of Comparative Example 1 was placed in an environment with a relative humidity of 60% and an oxygen volume concentration of 25%. An organic EL device was produced in the same manner as in Comparative Example 1 except that it was left for 120 minutes.

[Measuring method]
<Luminance half-life>
As a method for measuring the luminance half-life, a change in luminance was observed with a photodiode when a constant direct current with a luminance of 2500 nit at the start of the test was applied to the produced organic EL element. The time (luminance half-life) until the luminance value reached half of the test start, that is, 1250 nit was determined. The energization test was performed in a room where the room temperature was controlled to 23 ± 1.5 ° C. by air conditioning.

The obtained luminance half-life results are shown in Table 1 below.

<Vth>
Vth was measured by measuring the voltage when the luminance was 1 nit. The luminance was measured using a color luminance meter.

The Vth results are shown in Table 2 below.

  From these results, it is clear that when the manufacturing method of the present invention is used, an organic EL element having a long lifetime and a low driving voltage can be obtained, and the lifetime of an element having an organic layer formed using a wet film forming method is obtained. The decrease could be reduced.

  The present invention relates to various fields where an organic EL optical element is used, for example, a light source (for example, a light source of a copying machine, a flat panel display (for example, for an OA computer or a wall-mounted television) or a surface light emitter). It can be suitably used in the fields of liquid crystal displays and backlights of instruments), display panels, indicator lamps and the like.

It is sectional drawing which shows typically an example of the structure of the organic EL element of this invention. It is sectional drawing which shows typically another example of the structure of the organic EL element of this invention. It is sectional drawing which shows typically another example of the structure of the organic EL element of this invention. It is sectional drawing which shows typically the structure of the organic EL element which concerns on the Example of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate 2 Anode 3 Hole injection layer 4 Light emitting layer 5 Electron injection layer 6 Cathode 7 Hole transport layer 8 Electron block layer 9a Electron transport layer 9b Hole block layers 10a to 10d Organic EL device

Claims (5)

A method for producing an organic electroluminescent device having an organic layer formed by a wet film formation method between an anode and a cathode,
The step of forming the organic layer by a wet film formation method includes a film formation step and a drying step,
A method for producing an organic electroluminescent device, wherein a drying step is performed within 15 minutes after the film forming step is completed. 2. The method of manufacturing an organic electroluminescent element according to claim 1, wherein the film forming step is performed in an atmosphere having a relative humidity of 0.01 to 100 ppm and an oxygen volume concentration of 0.01 ppm to 100 ppm. After forming the organic layer by a wet film forming method, further comprising a step of forming an organic layer on the organic layer by a vapor deposition method,
After the step of forming the organic layer by the wet film-forming method, before the step of forming the organic layer by the vapor deposition method, the organic layer formed by the wet film-forming method has a relative humidity of 0.01 ppm to 10%, 3. The method for producing an organic electroluminescent element according to claim 1, wherein the oxygen electroluminescent element is placed in an atmosphere having a volume concentration of oxygen of 0.01 ppm to 25%. The method for producing an organic electroluminescent element according to claim 3, wherein the organic layer formed by the vapor deposition method is a hole blocking layer or an electron transporting layer. The method for producing an organic electroluminescent element according to claim 1, wherein the organic layer formed by the wet film forming method is a light emitting layer.

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