JP2008187209A - Plasma etching electrode - Google Patents
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- 238000001020 plasma etching Methods 0.000 title claims abstract description 68
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 28
- 239000010703 silicon Substances 0.000 claims abstract description 28
- 238000011109 contamination Methods 0.000 claims abstract description 19
- 229910021397 glassy carbon Inorganic materials 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 abstract description 15
- 229910052751 metal Inorganic materials 0.000 abstract description 14
- 239000002184 metal Substances 0.000 abstract description 14
- 239000004065 semiconductor Substances 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 235000012431 wafers Nutrition 0.000 description 28
- 239000007789 gas Substances 0.000 description 17
- 239000011347 resin Substances 0.000 description 12
- 229920005989 resin Polymers 0.000 description 12
- 238000007664 blowing Methods 0.000 description 8
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 238000003754 machining Methods 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000005011 phenolic resin Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- YNJBWRMUSHSURL-UHFFFAOYSA-N trichloroacetic acid Chemical compound OC(=O)C(Cl)(Cl)Cl YNJBWRMUSHSURL-UHFFFAOYSA-N 0.000 description 3
- 238000004506 ultrasonic cleaning Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000007849 furan resin Substances 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
- 101100233059 Caenorhabditis elegans ima-3 gene Proteins 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004255 ion exchange chromatography Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical class C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
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Abstract
Description
本発明は半導体ウエハの加工に利用されるプラズマエッチング装置に使用される電極（以下プラズマエッチング電極と称す）に関し、より詳細には反応室に高周波電力が印加され、かつエッチングガスをシャワー状に分散させるためのガス吹き出し穴を有する上部電極と、該電極に対向してシリコンウエハが載置される下部電極とを有する平行平板型プラズマエッチング装置等において前記高周波電力が印加される電極に関する。 The present invention relates to an electrode (hereinafter referred to as a plasma etching electrode) used in a plasma etching apparatus used for processing a semiconductor wafer, and more specifically, a high frequency power is applied to a reaction chamber and an etching gas is dispersed in a shower shape. The present invention relates to an electrode to which the high-frequency power is applied in a parallel plate type plasma etching apparatus or the like having an upper electrode having a gas blowing hole and a lower electrode on which a silicon wafer is placed facing the electrode.
半導体ウエハに素子を形成するために、エッチング処理が行われている。このエッチングを行う装置として、プラズマエッチング装置が用いられている。プラズマエッチング装置は、図１に示されるように、真空容器１内に上部電極２および下部電極３が間隔を置いて設けられており、下部電極３の上に被処理材としてシリコンウエハ４を載置している。上部電極２はバックプレート５とプラズマエッチング電極６とで構成されており、それぞれにエッチングガスを流すためのガス吹き出し穴７が設けられている。
An etching process is performed in order to form elements on a semiconductor wafer. As an apparatus for performing this etching, a plasma etching apparatus is used. In the plasma etching apparatus, as shown in FIG. 1, an
エッチングガスをガス吹き出し穴７を通してシリコンウエハ４に向かって流しながら、高周波電源８により、上部電極２と下部電極３の間に高周波電力を印加してプラズマ１１を形成する。このプラズマによってシリコンウエハ４をエッチングし、所定のパターンの素子を形成するものである。絶縁リング９及びシールドリング１０は、アルミナあるいは石英のような絶縁物からなり、シールドリング１０は、プラズマエッチング電極６の取付用ビスをプラズマから保護するため、プラズマエッチング電極６の外周部を覆うように設置される。
A plasma 11 is formed by applying a high-frequency power between the
プラズマエッチング電極６は、使用するに従いプラズマが発生している部分、つまり対向しているシリコンウエハ４とほぼ同じ面積の部分が、プラズマによってエッチングされ消耗する。そこで、ある程度プラズマエッチング電極６が消耗し、エッチング特性（エッチングの間にシリコンウエハ４上に付着した異物粒子等）が規格を外れるとプラズマエッチング電極６の使用を中止し、新たな電極と交換する。
As the plasma etching electrode 6 is used, a portion where plasma is generated, that is, a portion having substantially the same area as the
従来、特開昭６２−１０９３１７号公報に記載されているように、炭素粒子の脱落がない、高純度であるという性質を利用して、ガラス状炭素が使用されている。しかしながら、最近の半導体集積回路の高集積化に伴い、シリコンウエハのエッチング後の形状がより高精度に制御されるようになってきたため、半導体集積回路の歩留に影響を及ぼす金属汚染（特にＦｅ汚染）の低減が求められている。これに伴い、プラズマエッチング電極も金属不純物をより少なくすることが要求されている。
この対策として、ガラス状炭素製プラズマエッチング電極をシリコンウエハの洗浄に用いられるＲＣＡ洗浄で高純度化することが行われたが、シリコンウエハへの金属汚染、特にプラズマエッチング電極使用開始直後の金属汚染を大幅に改善するまでには至っていない。
Conventionally, as described in JP-A No. 62-109317, glassy carbon has been used by utilizing the property that carbon particles do not fall off and have high purity. However, with the recent high integration of semiconductor integrated circuits, the shape after etching of a silicon wafer has been controlled with higher accuracy, so that metal contamination that affects the yield of semiconductor integrated circuits (especially Fe Reduction of contamination is required. Along with this, the plasma etching electrode is also required to have less metal impurities.
As a countermeasure, the glass-etched carbon plasma etching electrode was purified to high purity by RCA cleaning used for cleaning silicon wafers. Metal contamination of the silicon wafer, particularly metal contamination immediately after the start of use of the plasma etching electrode was performed. Has not yet been improved significantly.
また、現在一般的に行われているプラズマエッチング電極の純度測定方法は下記に示す通りである。
（１）プラズマエッチング電極を灰化した後、その灰をＩＣＰ−ＭＡＳＳで不純物量を測定する。
（２）プラズマエッチング電極を１０％塩酸に浸漬して、表面に付着している金属不純物を抽出した後、抽出液中の金属不純物量をイオンクロマトグラフィで測定する。
Moreover, the purity measuring method of the plasma etching electrode currently generally performed is as follows.
(1) After ashing the plasma etching electrode, the amount of impurities is measured by ICP-MASS of the ash.
(2) The plasma etching electrode is immersed in 10% hydrochloric acid to extract metal impurities adhering to the surface, and then the amount of metal impurities in the extract is measured by ion chromatography.
しかしながら、前記（１）の測定方法では、プラズマエッチング電極のバルクの純度は分かるが、測定感度が低いため、半導体集積回路の製品歩留特に使用直後の歩留との相関が分からなかった。また、前記（２）の測定方法では、表面に付着している不純物量しか測定できない。ところが表面に付着している不純物は、電極取り付け時に行う空放電（ダミーのシリコンウエハを投入してプラズマを発生させること）で容易に除去されるため、シリコンウエハの金属汚染に影響を及ぼさない。そのため製品歩留と不純物量に相関が認められなかった。 However, in the measurement method (1), the bulk purity of the plasma etching electrode can be known, but since the measurement sensitivity is low, the correlation with the product yield of the semiconductor integrated circuit, particularly the yield immediately after use, was not known. In the measurement method (2), only the amount of impurities adhering to the surface can be measured. However, since the impurities adhering to the surface are easily removed by empty discharge (plasma is generated by introducing a dummy silicon wafer) performed when the electrodes are attached, the metal contamination of the silicon wafer is not affected. Therefore, there was no correlation between product yield and impurity content.
本発明は、シリコンウエハのエッチング不良を防止して半導体集積回路の生産歩留、使用開始直後のシリコンウエハの金属汚染を大幅に低減できるプラズマエッチング電極を提供するものである。 The present invention provides a plasma etching electrode capable of preventing the etching failure of a silicon wafer and greatly reducing the production yield of a semiconductor integrated circuit and the metal contamination of the silicon wafer immediately after the start of use.
本発明は、シリコンウエハ表面へのＦｅ汚染量が１×１０１０ａｔｏｍｓ／ｃｍ２〜１０×１０１０ａｔｏｍｓ／ｃｍ２であるガラス状炭素からなるプラズマエッチング電極に関する。
また、本発明は、プラズマエッチング電極の厚さが３〜１０ｍｍである上記に記載のプラズマエッチング電極に関する。
The present invention relates to a plasma etching electrode made of glassy carbon in which the amount of Fe contamination on a silicon wafer surface is 1 × 10 10 atoms / cm 2 to 10 × 10 10 atoms / cm 2 .
The present invention also relates to the plasma etching electrode as described above, wherein the plasma etching electrode has a thickness of 3 to 10 mm.
本発明のプラズマエッチング電極は、シリコンウエハのエッチング後の金属汚染を防止して半導体集積回路の生産歩留、使用開始直後の生産歩留を大幅に低減できる。
また、本発明のプラズマエッチング電極を用いたプラズマエッチング装置は、シリコンウエハの金属汚染を防止して半導体集積回路の生産歩留、特に新たなプラズマエッチング電極を使用開始した直後の生産歩留を大幅に低減できる。
また、本発明の本発明のプラズマエッチング電極では、シリコンウエハのエッチング後の金属汚染を防止して半導体集積回路の生産歩留を向上できる、特に新たなプラズマエッチング電極を使用開始した直後の生産歩留を大幅に低減できるプラズマエッチング電極を的確に選択できる。
The plasma etching electrode of the present invention can prevent metal contamination after etching a silicon wafer, and can greatly reduce the production yield of a semiconductor integrated circuit and the production yield immediately after the start of use.
In addition, the plasma etching apparatus using the plasma etching electrode of the present invention prevents the metal contamination of the silicon wafer and greatly increases the production yield of the semiconductor integrated circuit, particularly immediately after the start of using the new plasma etching electrode. Can be reduced.
In the plasma etching electrode of the present invention, the metal contamination after etching of the silicon wafer can be prevented and the production yield of the semiconductor integrated circuit can be improved. In particular, the production process immediately after the use of a new plasma etching electrode is started. It is possible to accurately select a plasma etching electrode that can significantly reduce the yield.
本発明は、シリコンウエハ表面へのＦｅ汚染量が１×１０１０ａｔｏｍｓ／ｃｍ２〜１０×１０１０ａｔｏｍｓ／ｃｍ２であるガラス状炭素からなるプラズマエッチング電極である。
プラズマにより消耗する部分がガラス状炭素からなるプラズマエッチング電極において、ガラス状炭素が二次イオン質量分析（ＳＩＭＳ）で測定したＦｅ濃度を１×１０３ｃｏｕｎｔｓ以下に制御することによって、シリコンウエハの金属汚染を大幅に低減させることがわかった。ここで、ＳＩＭＳで測定した値が１×１０３ｃｏｕｎｔｓを超えると、プラズマエッチングの際、被エッチング材であるシリコンウエハが、電極消耗とともに飛散したＦｅに汚染されるため、シリコンウエハに形成されている半導体集積回路が不良となってしまう。
二次イオン質量分析（ＳＩＭＳ）で測定したＦｅ濃度は、５×１０２ｃｏｕｎｔｓ以下とすることが半導体集積回路の生産歩留向上の効果がより高いので、より好ましく、１×１０２ｃｏｕｎｔｓ以下とすることが特に好ましい。
The present invention is a plasma etching electrode made of glassy carbon in which the amount of Fe contamination on the silicon wafer surface is 1 × 10 10 atoms / cm 2 to 10 × 10 10 atoms / cm 2 .
By controlling the Fe concentration measured by secondary ion mass spectrometry (SIMS) to 1 × 10 3 counts or less in the plasma etching electrode in which the portion consumed by plasma is made of glassy carbon, the metal of the silicon wafer It has been found to significantly reduce contamination. Here, if the value measured by SIMS exceeds 1 × 10 3 counts, the silicon wafer, which is the material to be etched, is contaminated by the scattered Fe with electrode consumption during plasma etching. The semiconductor integrated circuit that is present becomes defective.
Secondary ion mass spectrometry (SIMS) Fe concentration measured by, since be 5 × 10 2 counts or less higher effect of production yield improvement of a semiconductor integrated circuit, and more preferably, 1 × 10 2 counts or less and It is particularly preferable to do this.
平行平板型のプラズマエッチング装置におけるプラズマエッチング電極の形状は一般に円板状である。本発明において、プラズマにより消耗する部分がガラス状炭素からなるプラズマエッチング電極とは、その円板全体がガラス状炭素からなるもの及びプラズマにより消耗する部分、即ち円板の中央部分（ガス吹き出し穴が設けられている範囲）がガラス状炭素からなり、その外周がその他の材料で構成されるものを含む。 The shape of the plasma etching electrode in the parallel plate type plasma etching apparatus is generally a disc shape. In the present invention, the plasma etching electrode in which the portion consumed by the plasma is made of glassy carbon means that the whole disk is made of glassy carbon, and the portion consumed by the plasma, that is, the central portion of the disk (gas blowing hole is The range provided is made of glassy carbon, and the outer periphery thereof is composed of other materials.
本発明のプラズマエッチング電極を構成するガラス状炭素は、前記特性を満たすものであれば、その原料及び製造法に特に制限はない。
原料として用いられる熱硬化性樹脂としては、フェノール樹脂、エポキシ樹脂、不飽和ポリエステル樹脂、フラン樹脂、メラミン樹脂、アルキッド樹脂、キシレン樹脂等を挙げることができる。また、これら樹脂の混合物を用いることもできる。これらの中で、フラン樹脂又はフェノール樹脂が好ましい。
If the glassy carbon which comprises the plasma etching electrode of this invention satisfy | fills the said characteristic, there will be no restriction | limiting in particular in the raw material and a manufacturing method.
Examples of the thermosetting resin used as a raw material include a phenol resin, an epoxy resin, an unsaturated polyester resin, a furan resin, a melamine resin, an alkyd resin, and a xylene resin. A mixture of these resins can also be used. Among these, furan resin or phenol resin is preferable.
熱硬化性樹脂の種類に応じて、硬化剤が用いられる。硬化剤としては、硫酸、塩酸、硝酸、リン酸等の無機酸、ｐ−トルエンスルホン酸、メタンスルホン酸等の有機スルホン酸、酢酸、トリクロロ酢酸、トリフロロ酢酸等のカルボン酸等が挙げられる。硬化剤は熱硬化性樹脂に対して０．００１〜２０重量％使用することが好ましい。
前記熱硬化性樹脂は、必要に応じて前記硬化剤を添加した後、目的とする形状に応じて各種成形方法で成形した後、硬化処理する。この硬化は６０〜２００℃、より好ましくは７０〜１００℃の温度で熱処理して行うことが好ましい。
A curing agent is used depending on the type of thermosetting resin. Examples of the curing agent include inorganic acids such as sulfuric acid, hydrochloric acid, nitric acid and phosphoric acid, organic sulfonic acids such as p-toluenesulfonic acid and methanesulfonic acid, and carboxylic acids such as acetic acid, trichloroacetic acid and trifluoroacetic acid. The curing agent is preferably used in an amount of 0.001 to 20% by weight based on the thermosetting resin.
The thermosetting resin is added with the curing agent as necessary, and then molded by various molding methods according to the target shape, and then cured. This curing is preferably performed by heat treatment at a temperature of 60 to 200 ° C., more preferably 70 to 100 ° C.
必要に応じさらにプラズマエッチング電極板としての所定の加工を行った後、高度に純化された治具及び炉を用い不活性雰囲気中（通常、ヘリウム、アルゴン等の不活性ガスや窒素、水素、ハロゲンガス等の非酸化性ガスの少なくとも一種の気体からなる酸素を含まない雰囲気、又は真空下）において、好ましくは８００〜３０００℃、より好ましくは１１００〜２８００℃の温度で焼成炭化する。ついで好ましくは１３００〜３５００℃の温度で熱処理しガラス状炭素を得ることができる。 If necessary, after further processing as a plasma etching electrode plate, in a inert atmosphere (usually inert gas such as helium and argon, nitrogen, hydrogen, halogen, etc.) using a highly purified jig and furnace In a non-oxidizing gas or other oxygen-free atmosphere or under vacuum), the carbonization is preferably performed at a temperature of 800 to 3000 ° C., more preferably 1100 to 2800 ° C. Then, it is preferably heat treated at a temperature of 1300-3500 ° C. to obtain glassy carbon.
ＳＩＭＳでのＦｅ測定値を上記の範囲内とするための方法は特に制限されないが、プラズマエッチング電極を、界面活性剤を添加したフッ硝酸、濃硫酸、王水等の強酸で洗浄する方法、ＨＣｌガス雰囲気中で高温の熱処理を行う方法等が挙げられる。 The method for bringing the measured value of Fe by SIMS within the above-mentioned range is not particularly limited. Examples include a method of performing a high-temperature heat treatment in a gas atmosphere.
本発明のプラズマエッチング電極の大きさ及び形状としては、特に制限されないが、外径１５０〜４００ｍｍ、厚さが３〜１０ｍｍの円板形のものが好ましい。電極をプラズマエッチング装置に取付けるための外周部の取付け穴は、８〜２４個設けられることが好ましい。エッチングガスをシャワー状に分散させるためのガス吹出し穴は、取付け穴より内周部に設けられることが好ましい。このガス吹出し穴の大きさはエッチング条件等により異なるが穴径で０．３〜２．０ｍｍが好ましく、穴数は１００〜３０００個が好ましい。穴の加工は、機械加工、放電加工、超音波加工等で行うことができる。 The size and shape of the plasma etching electrode of the present invention are not particularly limited, but a disk-shaped electrode having an outer diameter of 150 to 400 mm and a thickness of 3 to 10 mm is preferable. It is preferable that 8 to 24 mounting holes on the outer peripheral portion for mounting the electrode to the plasma etching apparatus are provided. It is preferable that the gas blowing holes for dispersing the etching gas in a shower shape are provided in the inner peripheral portion from the mounting holes. The size of the gas blowing hole varies depending on etching conditions and the like, but the hole diameter is preferably 0.3 to 2.0 mm, and the number of holes is preferably 100 to 3000. The hole can be processed by machining, electric discharge machining, ultrasonic machining, or the like.
プラズマエッチング電極の形状とする加工、ガス吹き出し穴の作製は、ガラス状炭素を得た後、放電加工、超音波加工等で行うこともできる。
本発明のプラズマエッチング電極を用いたプラズマエッチング装置は、プラズマエッチング電極として上記のものを使うこと以外は特に制限はない。その装置の一例としては、図１に示し、説明したものが挙げられ、図１において、プラズマエッチング電極６として上記のプラズマエッチング電極を用いればよい。
本発明のプラズマエッチング電極の評価法は、前述のＳＩＭＳでＦｅ濃度を測定することにより行うことができる。前述のようにＦｅ濃度が１×１０３ｃｏｕｎｔｓ以下となるプラズマエッチング電極を得る条件（製造法、洗浄方法など）を選択して、それによりプラズマエッチング電極を製造すれば、シリコンウエハの金属汚染を低減できるプラズマエッチング電極を得ることが可能となる。
The processing for forming the shape of the plasma etching electrode and the production of the gas blowing holes can be performed by electric discharge machining, ultrasonic machining, etc. after obtaining glassy carbon.
The plasma etching apparatus using the plasma etching electrode of the present invention is not particularly limited except that the above-described plasma etching electrode is used. As an example of the apparatus, the apparatus shown and described in FIG. 1 can be cited. In FIG. 1, the above-described plasma etching electrode may be used as the plasma etching electrode 6.
The plasma etching electrode evaluation method of the present invention can be performed by measuring the Fe concentration by the above-mentioned SIMS. As described above, if the conditions (manufacturing method, cleaning method, etc.) for obtaining the plasma etching electrode with an Fe concentration of 1 × 10 3 counts or less are selected and the plasma etching electrode is manufactured thereby, the metal contamination of the silicon wafer can be prevented. It is possible to obtain a plasma etching electrode that can be reduced.
以下に本発明の実施例を説明する。
なお本実施例のＳＩＭＳ測定は、（株）日立製作所製ＩＭＡ−３型を用いて、１次イオン種：Ｏ２＋、１次イオン加速電圧：２０ＫＶ、１次イオン電流：３００ｎＡの条件で行った。
測定した点は、ガラス状炭素製電極の中心点と、外周から１０ｍｍのところを９０度ピッチで４点の合計５点であり、その平均値をもって各電極の値とした。
Examples of the present invention will be described below.
In addition, the SIMS measurement of a present Example was performed on the conditions of primary ion species: O2 + , primary ion acceleration voltage: 20KV, primary ion current: 300nA using Hitachi Ltd. IMA-3 type. .
The measured points were the center point of the glass-like carbon electrode and a total of 5 points of 4 points at a pitch of 90 ° at 10 mm from the outer periphery, and the average value was taken as the value of each electrode.
実施例１〜８
原料樹脂にフェノール樹脂（日立化成工業（株）製、商品名ＶＰ−１１２Ｎ）を用い、これに硬化剤としてトリクロロ酢酸８重量％を加え、７０℃の加熱下、直径５００ｍｍのアルミ製シャーレに注型して樹脂板を得た。この樹脂板を７０℃で３日、９０℃で３日で加熱硬化した後、１℃／分の昇温速度で最高９００℃で焼成炭素化し、次いで昇温速度５℃／分で最高３０００℃で熱処理してガラス状炭素を得た。得られたガラス状炭素平板に放電加工によってガス吹き出し穴（穴径０．５ｍｍ、ピッチ１０ｍｍ、個数５００個）等を形成した後、ラップ、ポリッシュで表面仕上げしプラズマエッチング電極（外径２００ｍｍ、厚さ３ｍｍ）の形状とした。
次いで濃度２６重量％のフッ化水素酸と濃度６０重量％の硝酸と界面活性剤 （旭硝子製、商品名サーフロンＳ１３１）を５：５：１に混合したフッ硝酸に浸漬して超音波洗浄を行った。超音波洗浄時間を３０分〜１２０分の範囲で変えてＳＩＭＳで測定して本発明のプラズマエッチング電極を得た。
Examples 1-8
Phenol resin (trade name VP-112N, manufactured by Hitachi Chemical Co., Ltd.) is used as the raw material resin, and 8% by weight of trichloroacetic acid is added thereto as a curing agent, and the mixture is poured into an aluminum petri dish having a diameter of 500 mm under heating at 70 ° C. Molded to obtain a resin plate. This resin plate was heat-cured at 70 ° C. for 3 days and 90 ° C. for 3 days, and then calcined at a maximum temperature of 900 ° C. at a rate of 1 ° C./min, and then at a maximum rate of 3000 ° C. at a rate of 5 ° C./min. To give glassy carbon. Gas discharge holes (hole diameter: 0.5 mm, pitch: 10 mm, number of 500 pieces) are formed on the obtained glassy carbon flat plate by electric discharge machining, and then surface-finished by lapping and polishing, and a plasma etching electrode (outer diameter: 200 mm, thickness) 3 mm).
Next, ultrasonic cleaning is performed by immersing in hydrofluoric acid in which 5: 5: 1 is mixed with hydrofluoric acid having a concentration of 26% by weight, nitric acid having a concentration of 60% by weight, and a surfactant (product name: Surflon S131, manufactured by Asahi Glass). It was. The plasma etching electrode of the present invention was obtained by changing the ultrasonic cleaning time in the range of 30 minutes to 120 minutes and measuring with SIMS.
上記のプラズマエッチング電極を図１に示す構成のプラズマエッチング装置に取り付け、反応ガスとしてトリフロロメタン、フッ化メタンを各２０ＳＣＣＭ流し、電源周波数４００ＫＨｚ、反応チャンバー内のガス圧０．０５Ｔｏｒｒの条件でシリコンウエハのエッチング加工を行った。次いでこのシリコンウエハ表面のＦｅ汚染量を全反射型蛍光Ｘ線分析装置（テクノス（株）製、型式ＴＲＥＸ６１０Ｔ）で測定した。測定結果を表１に示す。 The above-described plasma etching electrode is attached to the plasma etching apparatus having the configuration shown in FIG. The wafer was etched. Next, the amount of Fe contamination on the silicon wafer surface was measured with a total reflection fluorescent X-ray analyzer (manufactured by Technos Co., Ltd., model TREX610T). The measurement results are shown in Table 1.
比較例１〜４
原料樹脂にフェノール樹脂（日立化成工業（株）製、商品名ＶＰ−１１２Ｎ）を用い、これに硬化剤としてトリクロロ酢酸８重量％を加え、７０℃の加熱下、直径５００ｍｍのアルミ製シャーレに注型して４つの樹脂板を得た。この樹脂板を７０℃で３日、９０℃で３日で加熱硬化した後、１℃／分の昇温速度で最高９００℃で焼成炭素化し、次いで昇温速度５℃／分で最高３０００℃で熱処理してガラス状炭素を得た。得られたガラス状炭素平板に放電加工によって実施例と同様にガス吹き出し穴等を形成した後、ラップ、ポリッシュで表面仕上げしプラズマエッチング電極の形状とした。次いで塩酸（濃度１重量％、３重量％、７重量％及び１０重量％）で３０分超音波洗浄した後、さらに純水で３０分洗浄した。これをＳＩＭＳで測定して本発明の範囲外のプラズマエッチング電極を得た。
Comparative Examples 1-4
Phenol resin (trade name VP-112N, manufactured by Hitachi Chemical Co., Ltd.) is used as the raw material resin, 8% by weight of trichloroacetic acid is added as a curing agent, and the mixture is poured into an aluminum petri dish having a diameter of 500 mm under heating at 70 ° C. Molded to obtain four resin plates. This resin plate was heat-cured at 70 ° C. for 3 days and 90 ° C. for 3 days, and then calcined at a maximum temperature of 900 ° C. at a rate of 1 ° C./min, and then at a maximum rate of 3000 ° C. at a rate of 5 ° C./min. To give glassy carbon. Gas discharge holes and the like were formed on the obtained glassy carbon flat plate by electric discharge machining in the same manner as in the example, and then the surface was finished with lapping and polishing to form a plasma etching electrode. Next, ultrasonic cleaning was performed for 30 minutes with hydrochloric acid (concentrations of 1% by weight, 3% by weight, 7% by weight and 10% by weight), followed by further cleaning with pure water for 30 minutes. This was measured by SIMS to obtain a plasma etching electrode outside the scope of the present invention.
上記のプラズマエッチング電極を実施例と同様にプラズマエッチング装置に取り付け、反応ガスとしてトリフロロメタン、フッ化メタンを各２０ＳＣＣＭ流し、電源周波数４００ＫＨｚ、反応チャンバー内のガス圧０．０５Ｔｏｒｒの条件でシリコンウエハのエッチング加工を行った。次いでこのシリコンウエハ表面のＦｅ汚染量を全反射型蛍光Ｘ線分析装置（テクノス（株）製、型式ＴＲＥＸ６１０Ｔ）で測定した。測定結果を表２に示す。
表１及び表２のＦｅ汚染量の測定結果は、６インチウエハの面内５点の平均値を示す。
The above plasma etching electrode is attached to the plasma etching apparatus in the same manner as in the embodiment, and 20 SCCM of trifluoromethane and fluorinated methane are flown as the reaction gas, the power supply frequency is 400 KHz, and the gas pressure in the reaction chamber is 0.05 Torr. Etching was performed. Next, the amount of Fe contamination on the surface of the silicon wafer was measured with a total reflection fluorescent X-ray analyzer (manufactured by Technos Co., Ltd., model TREX610T). The measurement results are shown in Table 2.
The measurement results of the amount of Fe contamination in Tables 1 and 2 show average values of 5 points in a 6-inch wafer.
１ 真空容器
２ 上部電極
３ 下部電極
４ シリコンウエハ
５ バックプレート
６ プラズマエッチング電極
７ ガス吹き出し穴
８ 高周波電源
９ シールドリング
１０ 取付用ビス
１１ プラズマ
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05320955A (en) * | 1992-05-25 | 1993-12-07 | Tokai Carbon Co Ltd | Electrode plate for plasma etching |
| JPH09328376A (en) * | 1996-06-06 | 1997-12-22 | Sumitomo Metal Ind Ltd | Production of ceramic member for semiconductor production unit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05320955A (en) * | 1992-05-25 | 1993-12-07 | Tokai Carbon Co Ltd | Electrode plate for plasma etching |
| JPH09328376A (en) * | 1996-06-06 | 1997-12-22 | Sumitomo Metal Ind Ltd | Production of ceramic member for semiconductor production unit |
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| CN104602587A (en) * | 2013-01-08 | 2015-05-06 | 吴长江 | Elastic and sticky hair-duster |
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