JP2008186960A - Heat treatment apparatus and manufacturing method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a heat treatment apparatus for enabling uniform heat treatment on a semiconductor layer containing an impurity, and a manufacturing method of a semiconductor device using this heat treatment apparatus. <P>SOLUTION: This heat treatment apparatus comprises an electric discharge lamp unit, a gas jet unit having a showerhead, and a treatment base for holding an object to be treated. At least one portion of the showerhead is formed to transmit the light radiated from the electric discharge lamp unit, sprays the high temperature gas jetted from the showerhead to the surface of the object, and irradiates the object with the light from the electric discharge lamp unit in synchronization therewith to heat-treat the semiconductor film. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a heat treatment apparatus suitable for manufacturing a semiconductor device formed on a glass substrate in a liquid crystal display device or the like, and a method for manufacturing a semiconductor device using the heat treatment apparatus.

  As a display device such as a liquid crystal display device, an active matrix display device in which a thin film transistor (TFT), which is a thin film semiconductor device, is provided for each pixel to drive a large number of pixels arranged in a matrix for each pixel. Are known. The manufacturing process of the TFT used for such applications is as follows.

  First, a semiconductor layer functioning as an active layer having a predetermined pattern is formed on a glass substrate. Next, a gate insulating film and a patterned gate electrode are sequentially formed on the semiconductor layer, and impurity ions are implanted into the semiconductor layer using the gate electrode as a mask to form a source region and a drain region.

  After the implantation of impurity ions, an interlayer insulating film is formed, and impurities in the source region and the drain region are activated by furnace furnace annealing. Next, a contact hole that reaches the semiconductor layer through the interlayer insulating film is formed, and a source electrode and a drain electrode connected to the source region and the drain region are formed in the contact hole and on the interlayer insulating film, and the TFT is formed. Is completed.

  In the TFT of the liquid crystal display device manufactured by the method as described above, element miniaturization is progressing. When the element is miniaturized, the cross-sectional area of each part through which current flows is reduced, resulting in an increase in resistance. For this reason, the resistivity of the source and drain regions varies depending on the activation state, and thus heat treatment for efficient activation is required.

  However, in the furnace furnace annealing as described above, since the strain point of the glass substrate is about 670 ° C., the heating temperature for activation is limited, and therefore the resistivity of the source and drain regions is not sufficiently lowered. There is a problem.

  As one method for improving the activation rate by addressing the above points, the present inventor has used a flash lamp as a light source, and instantaneously irradiates the irradiated object with this lamp light, and locally forms a semiconductor layer that absorbs the light. In particular, a method of raising the temperature to 1000 ° C. or higher has been developed.

  According to this method, the semiconductor layer that absorbs light can be heated to about 1400 ° C., so that the impurities contained in the polysilicon layer can be activated effectively in a short time. In this step, it was found that the semiconductor layer hardly absorbs incident light, and the glass substrate does not absorb light, so that it is not heated and does not reach 600 ° C. at which distortion occurs.

However, not only the glass substrate but also the underlying insulating film and the gate insulating film made of SiO ₂ adjacent to the semiconductor layer are not heated because they do not absorb light, and as a result, the temperature gradient between the semiconductor layer and the insulating film is large. Thus, the heat transfer from the peripheral portion of the semiconductor layer to the insulating film causes the temperature of the peripheral portion of the semiconductor layer to be lower than that of the central portion, causing a problem that uniform heat treatment cannot be performed.

  In order to solve this problem, a method has been proposed in which a light absorption layer is provided on an interlayer insulating film covering a gate electrode and the semiconductor layer is uniformly heated by light irradiation (see, for example, Patent Document 1).

However, according to this method, an extra film forming step for forming a light absorption layer unnecessary for the function of the semiconductor device is required, resulting in an increase in manufacturing cost.
JP 2000-138177 A

  The present invention has been made under the circumstances as described above, and an object of the present invention is to provide a heat treatment apparatus capable of uniform heat treatment of a semiconductor layer containing impurities and a method of manufacturing a semiconductor device using the heat treatment apparatus. And

  In order to solve the above-described problem, a first aspect of the present invention includes a discharge lamp unit, a gas injection unit having a shower head, and a processing table that holds an object to be processed. Transmitting light emitted from the discharge lamp unit, spraying the hot gas ejected from the gas injection unit onto the surface of the object to be processed, and irradiating light from the discharge lamp unit in synchronization therewith, the object to be processed A heat treatment apparatus characterized in that is heat-treated.

  In such a heat treatment apparatus, the portion of the shower head that transmits light emitted from the discharge lamp unit can be formed of quartz.

  In such a heat treatment apparatus, the ejection speed of the gas ejected from the gas ejection unit can be changed with a spike-like profile.

  In such a heat treatment apparatus, the temperature of the high-temperature gas is set higher than the strain point temperature of the translucent substrate and lower than the maximum temperature at which the semiconductor film is heated by light irradiation from the discharge lamp unit. be able to.

  In such a heat treatment apparatus, a flash lamp can be used as the discharge lamp unit.

  The synchronization means includes a sensor for detecting temperature or pressure provided at a position in the vicinity of the object to be processed on the processing table, and means for operating the discharge lamp unit in response to a signal of the jet gas detected by the sensor. Can be provided.

  An inert gas can be used as the high temperature gas. Moreover, as for the temperature of high temperature gas, it is desirable that they are 600 to 1400 degreeC.

  The second aspect of the present invention includes a step of forming a semiconductor film on a substrate, a step of forming a gate insulating film on the substrate including the semiconductor film, a step of forming a gate electrode on the gate insulating film, The step of implanting impurities into the semiconductor film using the gate electrode as a mask, and the heat treatment apparatus according to the first aspect of the present invention described above in the impurity implantation region, the high-temperature gas ejected from the gas injection unit is applied to the object. And a step of irradiating light from the discharge lamp unit and applying heat treatment to the semiconductor film to activate the impurities in the semiconductor film. An apparatus manufacturing method is provided.

  In such a method of manufacturing a semiconductor device, the timing of irradiating light from the discharge lamp unit may be when a rise in temperature in the vicinity of the object to be processed is detected after high temperature gas is sprayed on the surface of the object to be processed. it can. Or the timing which irradiates light from a discharge lamp unit can be made when the increase in the pressure of the to-be-processed object is detected after spraying high temperature gas on the surface of a to-be-processed object.

  ADVANTAGE OF THE INVENTION According to this invention, the heat processing apparatus which can heat uniformly the semiconductor film containing an impurity is provided by using together a discharge lamp unit and a gas injection unit. Further, by using such a heat treatment apparatus, the impurities in the semiconductor film can be activated efficiently, and a fine semiconductor device can be manufactured.

Hereinafter, the best mode for carrying out the present invention will be described.
The heat treatment apparatus according to an embodiment of the present invention is a discharge lamp in consideration that the heating temperature difference between the peripheral portion and the central portion of the semiconductor layer constituting the element pattern is mainly caused by heat conduction to the periphery. The apparatus is characterized in that local heating by the light emitted by the gas and a short-time heating of the entire surface of the object to be processed by the high-temperature gas ejected from the gas injection unit are used.

  According to such a heat treatment apparatus, it is possible to heat the semiconductor layer to a sufficiently high temperature for activation without increasing the temperature of the glass substrate by the light emitted from the discharge lamp, and from the gas injection unit. By heating with the jetted hot gas for a short time, the part adjacent to the semiconductor layer is also heated to reduce the temperature difference between the central part and the peripheral part of the semiconductor layer, thereby enabling uniform heating of the semiconductor layer. .

  FIG. 1 is a diagram showing an outline of a heat treatment apparatus according to an embodiment of the present invention. In FIG. 1, a processing table 3 that holds an object to be processed 2 in a predetermined position is disposed in an airtight container 1. A lamp unit 6 including a plurality of flash lamps 4 and a reflector 5 is disposed above the airtight container 1. Further, a shower head 7 of a gas injection unit for injecting a high-temperature gas for heating the object to be processed 2 is disposed between the flash lamp 4 and the object to be processed 2 with its injection port facing downward. ing. The shower head 7 is connected by a gas injection mechanism 8 and a conduit 9, and a gas injection unit 10 is constituted by these.

  In order to uniformly and efficiently heat the object to be processed 2 with the high-temperature gas ejected from the shower head 7, the shower head 7 is disposed close to the entire surface of the object to be processed 2 so that the shower head 7 is not substantially biased. It is desirable to provide a number of gas outlets. On the other hand, in order to uniformly and efficiently heat the object to be processed 2 with the light from the flash lamp 4, it is desirable to uniformly irradiate the object to be processed 2 without blocking the light from the flash lamp 4. In order to satisfy these conditions, the shower head 7 needs to be made of a material that transmits the light of the flash lamp 4.

  A sensor 11 for detecting an increase in temperature or an increase in pressure due to gas injection from the shower head 7 is provided in the vicinity of the periphery of the target object 2 on the processing table 3. The output circuit of the sensor 11 is connected to a lamp drive circuit 12 that sends a drive signal for driving the flash lamp 4 to light at the timing when the temperature rise or pressure increase due to the gas injection is detected.

  Connected to the output circuit of the lamp drive circuit 12 is a flash lamp 4 that lights up in synchronization with the signal when the drive signal is received. Thus, the heat treatment apparatus 13 suitable for the activation process is configured.

  Next, an embodiment in which the heat treatment apparatus 13 is applied to a heat treatment method such as a source / drain region activation process will be described.

  In the hermetic container 1, the substrate 2 to be processed after impurities are implanted into the source / drain regions of the semiconductor thin film in the TFT manufacturing process is aligned and carried to a predetermined position on the support 3. The inside of the airtight container 1 may be at atmospheric pressure and may be airtight so that the processing gas does not leak, and is provided with an exhaust port (not shown) for the processing gas. Thereafter, a gas heated to a high temperature is ejected from the shower head 7 to rapidly heat the temperature of the substrate 2 to be processed, for example, to 800 ° C.

  Thereafter, when the sensor 11 detects a predetermined temperature, for example, 800 ° C., the sensor 11 transmits a temperature detection signal to the lamp driving circuit 12. When the lamp driving circuit 12 receives the detection signal, the lamp driving circuit 12 sends driving power for driving the flash lamp 4 to light, thereby lighting the flash lamp 4. In this way, the activation process is completed. You may perform this process in multiple times as 1 period. Next, the to-be-processed object 2 which finished the activation process is carried out of the airtight container 1.

FIG. 2 is a cross-sectional view of a semiconductor device for explaining the object to be processed 2 shown in FIG. In FIG. 2, a base insulating film 22 made of, for example, SiO ₂ is formed on a substrate, for example, a 2 m square glass substrate 21 by plasma CVD to prevent the infiltration of impurities from the substrate 21. . On the base insulating film 22, a non-single-crystal semiconductor thin film such as an amorphous silicon film is formed by a plasma CVD method. This amorphous silicon film is irradiated with energy light for crystallization, and is polycrystallized. Then, the amorphous silicon film is plasma etched by leaving a pattern at a position where a predetermined TFT is formed as a mask to form an island shape. The polycrystalline semiconductor thin film 23 is processed.

On the island-like polycrystalline semiconductor thin film 23 and the exposed base insulating film 22, a gate insulating film 24 made of, for example, SiO ₂ is formed by a plasma CVD method. A conductor for forming a gate electrode, such as a metal thin film, is formed on the gate insulating film 24 by a sputtering method, and plasma etching is performed while leaving a pattern of a position for forming a predetermined TFT as a mask. Thus, the gate electrode 25 is formed. Impurity implantation for forming source and drain regions in the island-like polycrystalline semiconductor thin film 23 is performed using the gate electrode 25 as a mask. In order to activate these impurities, heat treatment is performed by the heat treatment apparatus shown in FIG. Further, an interlayer insulating film 26 made of SiO ₂ is formed on the entire surface so as to cover the island-like polycrystalline semiconductor thin film 23 and the gate electrode 25. After a contact hole is formed in the interlayer insulating film 26, a conductor, for example, a metal wiring is formed. Here, the heat treatment by the heat treatment apparatus shown in FIG. 1 is performed before the formation of the interlayer insulating film 26, but the heat treatment may be performed between the formation of the interlayer insulating film 26 and the formation of the contact holes.

  As the plurality of flash lamps 4 constituting the lamp unit 6, for example, rod-shaped xenon flash lamps can be used. A xenon flash lamp is a quartz glass tube in which xenon gas is sealed inside, an anode and a cathode connected to a capacitor are disposed at both ends, and a trigger electrode is disposed near the outer wall of the glass tube. When high voltage is applied, part of the xenon gas in the glass tube is ionized and the insulation between the anode and cathode is broken, so that the charge stored in the capacitor of the drive power circuit flows between the anode and cathode as a current. Light is emitted by exciting the xenon gas in the tube.

  The emission wavelength range of the flash lamp light ranges from the ultraviolet range to the infrared range, and the emission time is 0.1 ms to 100 ms.

  The xenon flash lamp 4 is turned on by injecting a high-temperature gas from the shower head 7 to heat the substrate 2 to be processed, and at a timing when the sensor 11 detects a temperature increase or pressure increase due to the gas injection, The flash lamp 4 is driven to be driven in synchronization with the drive signal. As a result, by irradiating the substrate 2 to be processed instantaneously, an efficient annealing process can be performed in a short time, and impurity ions can be activated. As the xenon flash lamp, a lamp having a high emission intensity in the ultraviolet to visible light region is suitable.

  The reflector 5 is provided to reflect the light emitted upward from the flash lamp 4 in the direction of the object 2 to be processed.

  When the lamp unit 6 irradiates the object 2 shown in FIG. 2 with light, the island-like polycrystalline semiconductor thin film 23 that absorbs light can be heated to about 1400 ° C. As a result, the impurities contained in the island-shaped polycrystalline semiconductor thin film 23 can be activated effectively in a short time. In this case, since the glass substrate 21 does not absorb light, it is not heated and does not reach 600 ° C., which causes distortion.

However, as described above, not only the glass substrate 21 but also the base insulating film 22 and the gate insulating film 24 made of SiO _{2 in the} vicinity of the island-shaped polycrystalline semiconductor thin film 23 do not absorb light and are not heated. The temperature gradient between the insulating film 22 and the gate insulating film 24 and the island-shaped polycrystalline semiconductor thin film 23 is increased, and the heat from the periphery of the island-shaped polycrystalline semiconductor thin film 23 to the base insulating film 22 and the gate insulating film 24 is increased. Due to this movement, the temperature of the peripheral portion of the island-like polycrystalline semiconductor thin film 23 becomes lower than that of the central portion, causing a problem that uniform heat treatment cannot be performed.

  In the present embodiment, by providing the gas injection unit 10 and injecting high-temperature gas, the base insulating film 22 and the gate insulating film 24 in the vicinity of the island-like polycrystalline semiconductor thin film 23 are also heated together with the island-like polycrystalline semiconductor thin film 23. As a result, the generation of temperature gradient was suppressed, and this problem was solved. That is, the gas injection unit 10 injects a high-temperature gas for a very short time and sprays it on the object 2 to heat the island-like polycrystalline semiconductor thin film 23, the base insulating film 22 and the gate insulating film 24, The heat transfer from the peripheral part of the polycrystalline semiconductor thin film 23 to the base insulating film 22 and the gate insulating film 24 is prevented, and the island-shaped polycrystalline semiconductor thin film 23 can be heated uniformly.

  The type of gas is preferably an inert gas such as nitrogen or argon.

The peak temperature of heating of the island-like polycrystalline semiconductor thin film 23 is determined by the heating condition by irradiation with flash lamp light, and the gas heating plays a role of auxiliary heating. It is desirable that the peak temperature of the auxiliary heating with the high-temperature gas is as high as possible without causing the glass to deform. That is, it is desirable to set the gas temperature and the jetting time so that the peak temperature of the glass substrate does not greatly exceed the strain point of the glass substrate in order to prevent deformation of the glass substrate 21. Accordingly, it is necessary to set the gas temperature in consideration of the heat transfer efficiency from the high temperature gas to the workpiece 2 by changing the ejection speed of the high temperature gas with a spike-like profile. The gas injection time is about 0.1 seconds, and the gas temperature is different depending on the material of the glass substrate and the like.
In addition, in the heating by the transfer of heat from the high temperature gas to the object to be processed 2, the temperature is not increased as rapidly as the heating by the irradiation of the flash lamp light, and thus the object to be processed 2 is heated by the gas injection unit 10 by the high temperature gas heating. However, activation of impurities contained in the island-like polycrystalline semiconductor thin film 23 cannot be completed in a short time, and the island-like polycrystalline semiconductor thin film 23 is brought to near the melting point, that is, to about 1400 ° C. only by such heating. Attempting to heat is not preferable because the temperature of the glass substrate 21 exceeds the strain point and the glass substrate 21 is deformed.

  Therefore, in order to uniformly heat the island-like polycrystalline semiconductor thin film 23 to 1400 ° C. without causing deformation of the glass substrate 21, light heating by the lamp unit 6 and high-temperature gas heating by the gas injection unit 10 are performed. It is necessary to use together.

  As the gas injection mechanism 8 constituting the gas injection unit 10 shown in FIG. 1, those based on various mechanisms can be used. For example, a mechanism using a piston driven at high speed, a combination of a gas compression device and a gas release valve, a mechanism similar to an air gun, or the like can be used.

  Since the heat treatment apparatus according to the present embodiment uses both light heating by the lamp unit 6 and gas injection heating by the gas injection unit 10, it is necessary to operate both in synchronization. In this case, the light emission time of the flash lamp 4 of the lamp unit 6 is 1 to 2 milliseconds, which is shorter than the heating time by gas injection. Therefore, as shown in FIG. After the temperature rises, the sensor 11 installed in the vicinity of the object to be processed 2 detects the temperature rise or pressure increase due to the gas injection, and sends this signal to the synchronization means 12, which drives the flash lamp 4 from the synchronization means 12. By sending a signal, light heating by the lamp unit 6 can be performed in synchronization with heating by gas injection.

  Next, a method for manufacturing a thin film transistor (TFT) for driving a liquid crystal display device in which impurities contained in the polycrystalline semiconductor thin film 23 are activated using the heat treatment apparatus described above will be described. FIG. 3 is a cross-sectional view showing the method of manufacturing the thin film transistor (TFT) in the order of steps.

First, a substrate to be processed 31 is prepared. In this embodiment, a substrate in which a base insulating layer 33 made of SiO ₂ is formed on a glass substrate 32 is used as the substrate to be processed 31. An amorphous silicon layer 34 is formed on substantially the entire surface of the glass substrate 31 (on the base insulating layer 33) so as to have a layer thickness of, for example, 50 nm. Thereafter, an annealing process is performed in an atmosphere at a temperature of 500 ° C. to release hydrogen in the amorphous silicon layer 34 (FIG. 3A).

  Next, the amorphous silicon layer 34 is crystallized to form a polysilicon layer 35 by, for example, ELA (Excimer Laser Anneal) method (FIG. 3B).

  Next, a resist mask having a predetermined shape is formed on the polysilicon layer 35 by PEP (Photo Engraving Process, so-called photolithography), and the polysilicon layer 35 is formed by CDE (Chemical Dry Etching) using the resist mask as a mask. Etching is performed to process the polysilicon layer 35 into an island shape (FIG. 3C).

Thereafter, a gate made of SiO _{2 is used} to cover the polysilicon layer (island-like polycrystalline semiconductor thin film) 35 and the base insulating layer 33 processed into an island shape by using PE-CVD (Plasma Enhanced Chemical Vapor Deposition) method. An insulating film 36 is formed (FIG. 3D).

  Next, a metal layer, for example, a molybdenum tungsten layer 37 is formed on substantially the entire surface of the gate insulating film 36 (FIG. 4A). Then, after a resist mask having a predetermined shape is formed on the molybdenum tungsten layer 37 by PEP, unnecessary portions of the molybdenum tungsten layer are removed by reactive ion etching using the resist mask as a mask to form the gate electrode 38. (FIG. 4B).

  Next, using the gate electrode layer 38 as a mask, impurity ions (such as phosphorus or boron) are implanted into the polysilicon layer 35 to form impurity regions, for example, a source region and a drain region (FIG. 4C).

  After that, using the heat treatment apparatus shown in FIG. 1, the structure shown in FIG. 4 (d) is heat-treated by operating the light heating by the lamp unit 6 and the gas injection heating by the gas injection unit 10 in synchronization. Impurities contained in the polysilicon layer 35 are activated to form a source region and a drain region.

  That is, nitrogen gas is jetted downward from the shower head 7 by the gas jet unit 10 to heat the structure shown in FIG. 4D, and the heating temperature or jet pressure is detected by the sensor 11 and the signal is received. When the synchronization unit 12 drives the flash lamp 4, the structure shown in FIG. 4D is irradiated with light. At this time, the heating time by the gas injection is longer than the light irradiation time by the flash lamp 4, so that the light irradiation by the flash lamp 4 is completed within the heating time by the gas injection.

Next, an interlayer insulating film 39 made of SiO ₂ is formed on the entire surface (FIG. 4D).

  After that, according to a normal thin film transistor manufacturing process, a contact hole is formed so as to expose a part of the source region and a part of the drain region, and then a metal wiring layer is formed so as to fill the contact hole and patterned. Thus, the source electrode and the drain electrode are formed, and the TFT is completed.

  In the TFT for driving the liquid crystal display device manufactured as described above, the heat treatment is performed by using the light heating by the lamp unit 6 and the gas injection heating by the gas injection unit 10 together. Thus, the impurities in the polysilicon layer 35 can be activated efficiently.

    Further, unlike the conventional method, it is not necessary to provide a light absorption layer, so that the number of steps can be reduced and the process efficiency can be improved.

  In the above embodiment, the flash lamp is used as the light source of the lamp unit 6, but CW-YAG laser light may be irradiated, for example, scanned instead of the light irradiation by the flash lamp.

It is a figure which shows the heat processing apparatus which concerns on one Embodiment of this invention. It is sectional drawing which shows the to-be-processed object heat-processed by the heat processing apparatus shown in FIG. It is sectional drawing which shows the manufacturing method of the semiconductor device using the heat processing apparatus shown in FIG. 1 in order of a process. It is sectional drawing which shows the manufacturing method of the semiconductor device using the heat processing apparatus shown in FIG. 1 in order of a process.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Heat processing apparatus, 2 ... To-be-processed object, 3 ... Processing stand, 4 ... Flash lamp, 5 ... Reflector, 6 ... Lamp unit, 7 ... Shower head, 8 ... Gas injection mechanism, 9 ... Conduit, 10 ... Gas injection unit, 11 ... Sensor, 12 ... Synchronizing means, 21, 32 ... Glass substrate, 22, 33 ... Base Insulating film, 23 ... island-like polycrystalline semiconductor thin film, 24, 36 ... gate insulating film, 25, 38 ... gate electrode, 26, 39 ... interlayer insulating layer, 35 ... polysilicon layer

Claims (13)

  A discharge lamp unit, a gas jet unit having a shower head, and a processing table for holding an object to be processed are provided, and at least a part of the shower head transmits light emitted from the discharge lamp unit. Heat treatment equipment.   The heat treatment apparatus according to claim 1, wherein a portion of the shower head that transmits light emitted from the discharge lamp unit is made of quartz.   3. The heat treatment apparatus according to claim 1, wherein an ejection speed of the gas ejected from the gas injection unit varies with a spike-like profile. 4.   The heat treatment apparatus according to any one of claims 1 to 3, further comprising synchronization means for synchronizing and operating light emission of the discharge lamp unit and gas ejection of the gas injection unit.   The synchronization means receives a temperature sensor provided at a position in the vicinity of the object to be processed on the processing table and a temperature signal of the jet gas detected by the temperature sensor, and operates the discharge lamp unit. The heat treatment apparatus according to claim 1, further comprising a means.   The synchronization means receives a pressure sensor provided at a position in the vicinity of the object to be processed on the processing table and a pressure signal of the jet gas detected by the pressure sensor, and operates the discharge lamp unit. The heat treatment apparatus according to claim 1, further comprising a means.   The object to be processed is formed of a semiconductor film on a light-transmitting substrate, the temperature of the high-temperature gas is higher than the strain point temperature of the light-transmitting substrate, and the light irradiation from the discharge lamp unit results in the light irradiation. The heat treatment apparatus according to claim 1, wherein the temperature is lower than a maximum temperature at which the semiconductor film is heated.   The heat treatment apparatus according to claim 1, wherein the discharge lamp unit is a flash lamp.   The heat treatment apparatus according to claim 1, wherein the high-temperature gas is an inert gas.   The heat treatment apparatus according to claim 1, wherein the temperature of the high-temperature gas is 600 ° C. to 1400 ° C. Forming a semiconductor film on the substrate;
Forming a gate insulating film on the substrate including the semiconductor film;
Forming a gate electrode on the gate insulating film;
Injecting impurities into the semiconductor film using the gate electrode as a mask, and using the heat treatment apparatus according to claim 1 in the impurity implantation region, a high-temperature gas ejected from the gas injection unit is applied to the surface of the object to be processed. A method of manufacturing a semiconductor device, comprising: irradiating light from the discharge lamp unit in a state of being sprayed on the semiconductor film to heat-treat the semiconductor film to activate impurities in the semiconductor film.   The semiconductor device manufacturing method according to claim 11, wherein the timing of irradiating light from the discharge lamp unit is when an increase in temperature in the vicinity of the object to be processed is detected after the high-temperature gas is sprayed on the surface of the object to be processed. Method.   The semiconductor device manufacturing method according to claim 11, wherein the timing of irradiating light from the discharge lamp unit is when an increase in pressure in the vicinity of the object to be processed is detected after the high-temperature gas is sprayed on the surface of the object to be processed. Method.

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