JP2008182158A5 - - Google Patents

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Publication number
JP2008182158A5
JP2008182158A5 JP2007016129A JP2007016129A JP2008182158A5 JP 2008182158 A5 JP2008182158 A5 JP 2008182158A5 JP 2007016129 A JP2007016129 A JP 2007016129A JP 2007016129 A JP2007016129 A JP 2007016129A JP 2008182158 A5 JP2008182158 A5 JP 2008182158A5
Authority
JP
Japan
Prior art keywords
longitudinal direction
semiconductor device
semiconductor layer
substrate
connection portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007016129A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008182158A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007016129A priority Critical patent/JP2008182158A/ja
Priority claimed from JP2007016129A external-priority patent/JP2008182158A/ja
Priority to US12/020,982 priority patent/US20080210989A1/en
Publication of JP2008182158A publication Critical patent/JP2008182158A/ja
Publication of JP2008182158A5 publication Critical patent/JP2008182158A5/ja
Withdrawn legal-status Critical Current

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JP2007016129A 2007-01-26 2007-01-26 半導体装置 Withdrawn JP2008182158A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007016129A JP2008182158A (ja) 2007-01-26 2007-01-26 半導体装置
US12/020,982 US20080210989A1 (en) 2007-01-26 2008-01-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007016129A JP2008182158A (ja) 2007-01-26 2007-01-26 半導体装置

Publications (2)

Publication Number Publication Date
JP2008182158A JP2008182158A (ja) 2008-08-07
JP2008182158A5 true JP2008182158A5 (cg-RX-API-DMAC7.html) 2010-03-11

Family

ID=39725806

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007016129A Withdrawn JP2008182158A (ja) 2007-01-26 2007-01-26 半導体装置

Country Status (2)

Country Link
US (1) US20080210989A1 (cg-RX-API-DMAC7.html)
JP (1) JP2008182158A (cg-RX-API-DMAC7.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009101870A1 (ja) * 2008-02-12 2009-08-20 Nec Corporation 半導体装置
JP6375608B2 (ja) * 2013-10-15 2018-08-22 富士通株式会社 半導体装置及びその製造方法
JP6565223B2 (ja) * 2015-03-05 2019-08-28 富士通株式会社 半導体装置及びその製造方法、電源装置、高周波増幅器
JP2018093239A (ja) * 2018-03-12 2018-06-14 ルネサスエレクトロニクス株式会社 半導体装置
JP7577895B2 (ja) * 2022-03-29 2024-11-05 ヌヴォトンテクノロジージャパン株式会社 電力増幅半導体装置
JP7845622B2 (ja) * 2022-09-09 2026-04-14 住友電工デバイス・イノベーション株式会社 半導体装置及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09260405A (ja) * 1996-03-27 1997-10-03 Mitsubishi Electric Corp 半導体装置とその製造方法

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