JP2008178680A - 人工内耳装置、および体外集音装置、ならびにそれらを有する人工内耳システム - Google Patents
人工内耳装置、および体外集音装置、ならびにそれらを有する人工内耳システム Download PDFInfo
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- JP2008178680A JP2008178680A JP2007336399A JP2007336399A JP2008178680A JP 2008178680 A JP2008178680 A JP 2008178680A JP 2007336399 A JP2007336399 A JP 2007336399A JP 2007336399 A JP2007336399 A JP 2007336399A JP 2008178680 A JP2008178680 A JP 2008178680A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
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- A61N1/18—Applying electric currents by contact electrodes
- A61N1/32—Applying electric currents by contact electrodes alternating or intermittent currents
- A61N1/36—Applying electric currents by contact electrodes alternating or intermittent currents for stimulation
- A61N1/36036—Applying electric currents by contact electrodes alternating or intermittent currents for stimulation of the outer, middle or inner ear
- A61N1/36038—Cochlear stimulation
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- A—HUMAN NECESSITIES
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- A61N1/0526—Head electrodes
- A61N1/0541—Cochlear electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
- H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
- H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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- Otolaryngology (AREA)
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- General Health & Medical Sciences (AREA)
- Public Health (AREA)
- Veterinary Medicine (AREA)
- Prostheses (AREA)
- Electrotherapy Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007336399A JP2008178680A (ja) | 2006-12-28 | 2007-12-27 | 人工内耳装置、および体外集音装置、ならびにそれらを有する人工内耳システム |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006354767 | 2006-12-28 | ||
| JP2007336399A JP2008178680A (ja) | 2006-12-28 | 2007-12-27 | 人工内耳装置、および体外集音装置、ならびにそれらを有する人工内耳システム |
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| Publication Number | Publication Date |
|---|---|
| JP2008178680A true JP2008178680A (ja) | 2008-08-07 |
| JP2008178680A5 JP2008178680A5 (enExample) | 2011-01-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2007336399A Withdrawn JP2008178680A (ja) | 2006-12-28 | 2007-12-27 | 人工内耳装置、および体外集音装置、ならびにそれらを有する人工内耳システム |
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| Country | Link |
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| US (1) | US20080177353A1 (enExample) |
| JP (1) | JP2008178680A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012002467A1 (ja) * | 2010-06-29 | 2012-01-05 | Kitazawa Shigeyoshi | 音楽情報処理装置、方法、プログラム、人工内耳用音楽情報処理システム、人工内耳用音楽情報製造方法及び媒体 |
| US9277332B2 (en) | 2013-04-16 | 2016-03-01 | Samsung Electronics Co., Ltd. | Hearing apparatus including coil operable in different operation modes |
| JP2018531460A (ja) * | 2015-09-29 | 2018-10-25 | フジオ ダーツ テクノロジー エス エルFusio D’Arts Technology, S.L. | 通知装置及び通知方法 |
| JP2022552636A (ja) * | 2019-10-14 | 2022-12-19 | エコール・ポリテクニーク・フェデラル・ドゥ・ローザンヌ (ウ・ペ・エフ・エル) | ハイブリッド弾性/非弾性電気的相互接続システム |
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| US8248141B2 (en) | 2005-07-08 | 2012-08-21 | Med-El Elekromedizinische Geraete Gmbh | Data and power system based on CMOS bridge |
| US8934984B2 (en) | 2007-05-31 | 2015-01-13 | Cochlear Limited | Behind-the-ear (BTE) prosthetic device with antenna |
| WO2010101575A1 (en) * | 2009-03-06 | 2010-09-10 | Med-El Elektromedizinische Geraete Gmbh | Data and power system based on cmos bridge |
| US8594806B2 (en) | 2010-04-30 | 2013-11-26 | Cyberonics, Inc. | Recharging and communication lead for an implantable device |
| US20120041515A1 (en) * | 2010-08-16 | 2012-02-16 | Werner Meskens | Wireless remote device for a hearing prosthesis |
| US20130134546A1 (en) * | 2011-11-30 | 2013-05-30 | International Business Machines Corporation | High density multi-electrode array |
| WO2013147799A1 (en) | 2012-03-29 | 2013-10-03 | Advanced Bionics Ag | Implantable antenna assemblies |
| US9343923B2 (en) | 2012-08-23 | 2016-05-17 | Cyberonics, Inc. | Implantable medical device with backscatter signal based communication |
| US9935498B2 (en) | 2012-09-25 | 2018-04-03 | Cyberonics, Inc. | Communication efficiency with an implantable medical device using a circulator and a backscatter signal |
| EP2842598B1 (de) * | 2013-08-26 | 2017-05-03 | BIOTRONIK SE & Co. KG | Elektrodenleitung oder Elektrodenabschnitt einer Elektrodenleitung |
| US9717918B2 (en) | 2013-10-31 | 2017-08-01 | Advanced Bionics Ag | Headpieces and implantable cochlear stimulation systems including the same |
| US9968781B2 (en) | 2014-03-12 | 2018-05-15 | Advanced Bionics Ag | Implantable hearing assistance apparatus and corresponding systems and methods |
| WO2015147774A1 (en) | 2014-03-22 | 2015-10-01 | Advanced Bionics Ag | Headpieceless hearing assistance apparatus, systems and methods with distributed power |
| WO2015147773A1 (en) * | 2014-03-22 | 2015-10-01 | Advanced Bionics Ag | Implantable hearing assistance apparatus and corresponding systems and methods |
| TWI608739B (zh) * | 2015-01-16 | 2017-12-11 | 陳光超 | 外掛電子耳裝置與人工耳植入裝置 |
| JPWO2019048981A1 (ja) | 2017-09-06 | 2020-11-12 | 株式会社半導体エネルギー研究所 | 半導体装置、バッテリーユニット、バッテリーモジュール |
| EP3698557B1 (en) * | 2017-10-16 | 2024-11-13 | Starkey Laboratories, Inc. | Method of making a hearing device and a respective hearing device |
| CN114176812A (zh) * | 2021-12-21 | 2022-03-15 | 山东领能电子科技有限公司 | 一种用于电子种植牙的枕型装置、方法及系统 |
| CN114917474B (zh) * | 2022-05-17 | 2023-04-28 | 深圳市美好创亿医疗科技股份有限公司 | 一种植入耳蜗装置 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012002467A1 (ja) * | 2010-06-29 | 2012-01-05 | Kitazawa Shigeyoshi | 音楽情報処理装置、方法、プログラム、人工内耳用音楽情報処理システム、人工内耳用音楽情報製造方法及び媒体 |
| JPWO2012002467A1 (ja) * | 2010-06-29 | 2013-08-29 | 茂良 北澤 | 音楽情報処理装置、方法、プログラム、人工内耳用音楽情報処理システム、人工内耳用音楽情報製造方法及び媒体 |
| US9277332B2 (en) | 2013-04-16 | 2016-03-01 | Samsung Electronics Co., Ltd. | Hearing apparatus including coil operable in different operation modes |
| US9729980B2 (en) | 2013-04-16 | 2017-08-08 | Samsung Electronics Co., Ltd. | Hearing apparatus including coil operable in different operation modes |
| JP2018531460A (ja) * | 2015-09-29 | 2018-10-25 | フジオ ダーツ テクノロジー エス エルFusio D’Arts Technology, S.L. | 通知装置及び通知方法 |
| JP2022552636A (ja) * | 2019-10-14 | 2022-12-19 | エコール・ポリテクニーク・フェデラル・ドゥ・ローザンヌ (ウ・ペ・エフ・エル) | ハイブリッド弾性/非弾性電気的相互接続システム |
| JP7360642B2 (ja) | 2019-10-14 | 2023-10-13 | エコール・ポリテクニーク・フェデラル・ドゥ・ローザンヌ (ウ・ペ・エフ・エル) | ハイブリッド弾性/非弾性電気的相互接続システム |
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|---|---|
| US20080177353A1 (en) | 2008-07-24 |
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