JP2008172092A - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of efficiently discharging heat generated in a semiconductor element. <P>SOLUTION: A part of a solid-state imaging element 3 is stuck onto the mounting surface 5a of a package 5 by using a thermosetting die bond resin 9. Silicon is filled between the solid-state imaging element 3 and the package 5 as a heat transfer member 7. The silicon has a substantially fixed shape and flexibility when heated with the heat generated in the solid-state imaging element 5, and is excellent in thermal conductivity. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor device.

  As a conventional semiconductor device, there is a photoelectric conversion device including a light receiving element package, a light receiving element, and a thermosetting die bond resin (see Patent Document 1 below).

  In this photoelectric conversion device, a light receiving element (for example, a solid-state imaging element) is bonded onto a light receiving element package by a thermosetting die bond resin.

  The area of the portion of the thermosetting die-bonding resin applied on the light receiving element package that contacts the light receiving element is smaller than the area of the surface of the light receiving element that faces the light receiving element package.

By adopting such a configuration, it is possible to reduce the stress generated in the thermosetting die-bonding resin after the thermosetting die-bonding resin is thermoset, and to suppress the light receiving element from being bent back.
JP 2004-335628 A (see paragraphs 0044 to 0053, FIG. 1)

  In the above-described photoelectric conversion device, most of the heat generated in the light receiving element is transmitted to the light receiving element package through the thermosetting die-bonding resin, and is released to the outside from the light receiving element package. The portion of the light receiving element that is not in contact with the thermosetting die-bonding resin is in contact with a sealed gas such as nitrogen gas or air, and almost no heat is dissipated in that portion.

  However, in recent years, large-sized light receiving elements have come to be used, and the amount of heat generated has increased. With the heat dissipation structure of the prior art, the heat dissipation of the light receiving elements cannot catch up and dark current increases, for example, white unevenness occurs in the image. There is a risk that the image deteriorates.

  The present invention has been made in view of such circumstances, and an object thereof is to provide a semiconductor device capable of efficiently releasing heat generated in a semiconductor element.

  In order to solve the above-described problem, a semiconductor device according to claim 1 is a semiconductor device including a semiconductor element and a package having a mounting surface on which a part of the semiconductor element is mounted via an adhesive. A heat transfer member having flexibility and high thermal conductivity even when the semiconductor element generates heat is provided between the semiconductor element and the package.

  According to a second aspect of the present invention, in the semiconductor device according to the first aspect, a hole that leads to a gap between the semiconductor element and the package is formed in the package, and a part of the heat transfer member enters the hole. It is characterized by being.

  According to a third aspect of the present invention, in the semiconductor device according to the second aspect, the hole communicates from the bottom surface of the package to the mounting surface.

  According to a fourth aspect of the present invention, in the semiconductor device according to the third aspect, the hole is a long hole.

  A fifth aspect of the present invention is the semiconductor device according to any one of the first to fourth aspects, further comprising a contact member that contacts the package and promotes heat dissipation.

  A sixth aspect of the present invention is the semiconductor device according to the third or fourth aspect, further comprising a contact member that contacts the package and promotes heat dissipation, and the contact member is in contact with the heat transfer member in the hole. It is characterized by.

  According to a seventh aspect of the present invention, in the semiconductor device according to the sixth aspect, a part of the contact member is embedded in the heat transfer member of the hole.

  According to an eighth aspect of the present invention, in the semiconductor device according to any one of the fifth to seventh aspects, the contact member is a heat radiating plate.

  According to the present invention, the heat generated in the semiconductor element can be efficiently released.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  1 is a plan view of an imaging apparatus according to a first embodiment of the present invention, FIG. 2 is a conceptual diagram showing a cross section taken along line II-II in FIG. 1, and FIG. 3 is a plan view of a package of the imaging apparatus shown in FIG. It is.

  As shown in FIGS. 1 to 3, the imaging device (semiconductor device) 1 includes a solid-state imaging element (semiconductor element) 3, a package 5, and a heat transfer member 7.

  The planar shape of the solid-state image sensor 3 is rectangular, and only the central portion of the solid-state image sensor 3 is bonded onto the mounting surface 5 a of the package 5 with a thermosetting die bond resin (adhesive) 9.

  The package 5 has four holes 5b and 16 leads 5c. The cross-sectional shape of the hole 5b is circular, and communicates from the bottom surface 5e of the package 5 to the mounting surface 5a. The four holes 5b are located at the four corners of the rectangular element pasting area 5d on the mounting surface 5a of the package 5, respectively. In general, since a drive unit or the like is provided at the periphery of the solid-state image sensor 3, the periphery of the solid-state image sensor 3 generates a large amount of heat. Since the four holes 5b are located at the four corners of the element pasting area 5d, the holes 5b face the portion where the solid-state imaging device 3 generates a large amount of heat.

  Eight leads 5 c are provided on each side of the package 5. The lead 5c is bent at right angles from both side surfaces of the package 5 and extends downward. Each lead 5c is connected to an internal electrode (not shown) provided in the cavity portion 5f of the package 5. The internal electrode is connected to a connection electrode (not shown) of the solid-state imaging device 3 via a bonding wire 11.

  The heat transfer member 7 is, for example, grease-like silicone and fills the hole 5b. A part of the heat transfer member 7 enters a gap between the solid-state imaging device 3 and the package 5. Silicone is a general term for organosilicon compounds. The heat conductivity of the heat transfer member 7 is higher than the heat conductivity of the sealed gas such as nitrogen gas sealed in the package 5. Further, the heat transfer member 7 is heated by the solid-state image pickup device 3 when the imaging device 1 is in operation, but the heat transfer member 7 has a property that it does not flow out of the hole 5b even if heated. Further, the heat transfer member 7 is kept flexible even when heated, and does not solidify, so there is no possibility that the solid-state imaging device 3 is deflected by being solidified by heating unlike a die bond resin.

  A sealing glass 12 is fixed to the opening surface of the package 5 with a contact agent 13.

  In order to assemble the imaging device 1, first, the fixed imaging element 3 is bonded to the mounting surface 5 a of the package 5 with the thermosetting die bond resin 9, and then the thermosetting die bond resin 9 is heated and cured.

  Next, the connection electrode of the solid-state imaging device 3 and the rear end portion of the lead 5 c of the package 5 are connected by the bonding wire 11.

  Thereafter, the hole 5 b of the package 5 is filled with silicone as the heat transfer member 7.

  Finally, the sealing glass 12 is bonded to the upper surface of the package 5 with an adhesive 13. At this time, a sealed gas such as nitrogen gas is sealed in the package 5.

  When the imaging device 1 is used, the solid-state imaging device 1 generates heat. This heat is transmitted to the package 5 through the thermosetting die bond resin 9 and the heat transfer member 7. The heat transferred to the package 5 is released into the air through the package 5.

  As described above, according to the imaging apparatus 1 of this embodiment, the heat generated in the solid-state imaging device 3 is transmitted to the package 5 not only through the thermosetting die bond resin 9 but also through the heat transfer member 7. The heat of the image sensor 3 can be released efficiently. Therefore, for example, it is possible to prevent white unevenness or the like from occurring in an image output when the exposure time is extended, and to suppress deterioration of the image.

  FIG. 4 is a plan view of a package of a first modification of the first embodiment shown in FIG.

  This first modification differs from the first embodiment only in the configuration of the package 5. Since other parts are the same as those in the first embodiment, parts common to the imaging apparatus according to the first embodiment are denoted by the same reference numerals and description thereof is omitted. Only the main differences will be described below.

  The cross-sectional shape of the hole 5b of the package 5 of the imaging device 1 of the first embodiment is circular, but in the first modification shown in FIG. 4, the cross-sectional shape of the hole 5h of the package 25 is substantially elliptical. The holes 5h extend in a direction substantially perpendicular to the arrangement direction P of the leads 5c.

  According to the first modification, since the shape of the hole 5h is a long hole extending in a direction substantially orthogonal to the arrangement direction P of the leads 5c, the contact area of the heat transfer member 7 with the solid-state imaging device 3 is the first implementation. It can be made larger than the shape, and the heat of the solid-state imaging device 3 can be released more efficiently.

  FIG. 5 is a plan view of a package of a second modification of the first embodiment shown in FIG.

  This second modification differs from the first embodiment only in the configuration of the package 35. Since other parts are the same as those in the first embodiment, parts common to the imaging apparatus according to the first embodiment are denoted by the same reference numerals and description thereof is omitted. Only the main differences will be described below.

  In the second modification shown in FIG. 5, the shape of the hole 5i of the package 35 is a long hole, as in the first modification. However, unlike the first modification, the holes 5i extend in the arrangement direction P of the leads 5c.

  According to the second modified example, since the shape of the hole 5i is a long hole extending in the arrangement direction P of the leads 5c, the same effect as that of the first modified example can be obtained.

  FIG. 6 is a plan view of an imaging apparatus according to the second embodiment of the present invention, and FIG. 7 is a conceptual diagram showing a cross section taken along line VII-VII in FIG.

  Portions common to the first embodiment are denoted by the same reference numerals and description thereof is omitted. Only the main differences will be described below.

  In the second embodiment, a heat radiating plate (contact member) 15 is bonded to the bottom surface 5 e of the package 5 with an adhesive 16 as shown in FIGS.

  A plurality of pins (a part of contact members) 15 a are formed on the heat radiating plate 15. The pin 15a is embedded in the heat transfer member 7 in the hole 5b.

  According to the second embodiment, the heat radiating plate 15 is bonded to the bottom surface 5e of the package 5, and the pins 15a of the heat radiating plate 15 are embedded in the heat transfer member 7. The heat transferred to the member 7 can be released more efficiently.

  Note that each of the above-described embodiments is the imaging device 1, 201, but the application of the present invention is not limited to the imaging device 1, 201, and can be applied to semiconductor devices other than the imaging device 1, 201.

  Moreover, in each above-mentioned embodiment, although silicone was used as the heat-transfer member 7, a heat-transfer member is not limited to silicone. As the heat transfer member, any material may be used as long as it has a thermal conductivity better than that of the sealing gas, and can maintain a substantially constant shape even when heated by a semiconductor element, while maintaining flexibility.

  In each of the above-described embodiments, the thermosetting die bond resin 9 is used as an adhesive that bonds the solid-state imaging device 3 to the package 5, but the adhesive is not limited thereto.

  In the second embodiment, the heat radiating plate 15 is used as the contact member. However, the contact member is not limited to the heat radiating plate, and contacts the semiconductor device such as a support member that supports the semiconductor device, and the thermal conductivity is enclosed. Anything higher than the gas may be used. The contact member is not necessarily provided in the package 5 for heat dissipation, but may be any member that is in contact with the package 5 and can release the heat of the package 5.

  In the second embodiment, the heat radiating plate 15 has the pin 15a, but is not limited to the pin 15a, and the shape of the holes 5h and 5i of the package 5 is long as shown in FIGS. If it is a hole, a plate-shaped thing may be sufficient. Further, whether or not the pins 15a and the like are adopted for the heat transfer member 7 is arbitrary.

FIG. 1 is a plan view of an imaging apparatus according to the first embodiment of the present invention. FIG. 2 is a conceptual diagram showing a cross section taken along line II-II in FIG. FIG. 3 is a plan view of the package of the image pickup apparatus shown in FIG. FIG. 4 is a plan view of a package of a first modification of the first embodiment shown in FIG. FIG. 5 is a plan view of a package of a second modification of the first embodiment shown in FIG. FIG. 6 is a plan view of an imaging apparatus according to the second embodiment of the present invention. FIG. 7 is a conceptual diagram showing a cross section taken along line VII-VII in FIG.

Explanation of symbols

  1: imaging device (semiconductor device), 3: solid-state imaging device (semiconductor device), 5: package, 5a: mounting surface, 5b, 5h, 5i: hole, 7: heat transfer member, 9: thermosetting die bond resin ( Adhesive), 15: heat sink (contact member), 15a: pin (a part of the contact member).

Claims (8)

A semiconductor element;
In a semiconductor device comprising a package having a mounting surface on which a part of this semiconductor element is mounted via an adhesive,
A semiconductor device, wherein a heat transfer member having flexibility and high thermal conductivity even when the semiconductor element generates heat is provided between the semiconductor element and the package.   The semiconductor device according to claim 1, wherein a hole communicating with a gap between the semiconductor element and the package is formed in the package, and a part of the heat transfer member enters the hole.   3. The semiconductor device according to claim 2, wherein the hole communicates from the bottom surface of the package to the mounting surface.   4. The semiconductor device according to claim 3, wherein the hole is a long hole.   The semiconductor device according to claim 1, further comprising a contact member that contacts the package and promotes heat dissipation.   The semiconductor device according to claim 3, further comprising a contact member that contacts the package and promotes heat dissipation, and the contact member is in contact with the heat transfer member in the hole.   The semiconductor device according to claim 6, wherein a part of the contact member is embedded in the heat transfer member of the hole.   The semiconductor device according to claim 5, wherein the contact member is a heat radiating plate.

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