JP2008167358A - High-frequency semiconductor device and manufacturing method therefor - Google Patents

High-frequency semiconductor device and manufacturing method therefor Download PDF

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JP2008167358A
JP2008167358A JP2007000281A JP2007000281A JP2008167358A JP 2008167358 A JP2008167358 A JP 2008167358A JP 2007000281 A JP2007000281 A JP 2007000281A JP 2007000281 A JP2007000281 A JP 2007000281A JP 2008167358 A JP2008167358 A JP 2008167358A
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semiconductor device
substrate
frequency semiconductor
resin
saw filter
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Hideki Takehara
秀樹 竹原
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a high-frequency semiconductor device and its manufacturing method with which a SAW filter can be easily made thin and can be mixed and mounted on the same substrate as a semiconductor element and a chip-type passive component, without damaging the characteristics and a semiconductor device can be made thin and low-priced. <P>SOLUTION: A high-frequency semiconductor device has a structure, wherein a semiconductor element 3, a chip-type passive component 4 and a SAW filter element 5 are mounted on a surface of a substrate 1, in a surface region where the SAW filter element 5 is mounted; a cavity 6 is formed vertically from a surface thereof; and the overall surface of the substrate 1 is integrally encapsulated by a sealing resin formed, by using a liquid-state epoxy resin 9. The encapsulating resin is formed through a printing step of printing the liquid-state epoxy resin 9 in a pressurized atmospheric environment that is equal with or higher than 2,026hPa and then making the resin cure, in an atmospheric environment returned to ordinary pressure. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、基板表面に半導体素子、チップ型受動部品およびＳＡＷフィルターが載置されそれら全体が樹脂封止された高周波半導体装置に関するものである。   The present invention relates to a high-frequency semiconductor device in which a semiconductor element, a chip-type passive component, and a SAW filter are placed on a substrate surface, and all of them are resin-sealed.

昨今の携帯電話等の無線通信技術の著しい進歩に伴い、無線通信用の高周波半導体装置へのより高機能化、小型薄型化の市場の要求が強まっている。また、携帯電話の高機能化に伴い高周波半導体装置のＲＦ部は占有体積の小型化が要求され、受信系、送信系を中心に、従来は増幅や周波数変調の個別機能の装置を単体で使用していたものから、それらを複合させた機能を持ち、パッケージサイズをより小型化、薄型化した高機能型モジュールが求められている。   With the recent remarkable progress in wireless communication technology such as mobile phones, there is an increasing demand for higher-functionality, smaller and thinner markets for high-frequency semiconductor devices for wireless communication. In addition, with the high functionality of mobile phones, the RF part of high-frequency semiconductor devices is required to reduce the occupied volume. Conventionally, devices with individual functions such as amplification and frequency modulation have been used separately, mainly in reception and transmission systems. Therefore, there is a demand for a high-performance module having a function of combining them and having a smaller and thinner package size.

その例として、Ｔｘモジュールのような受信系のアンテナスイッチおよび送信系のパワーアンプなどのフロントエンド部を一体としたものがあるが、高周波半導体素子単体だけで構成するのは難しく、チップ型受動部品やフィルター部品などの多くの受動型部品を用いる複雑な構成となる。   As an example of this, there is an integrated front end unit such as a receiving antenna switch and a transmitting power amplifier such as a Tx module, but it is difficult to construct a single high-frequency semiconductor element alone. And a complicated configuration using many passive parts such as filter parts.

以上のような従来の高周波半導体装置を以下に説明する。なおここでは、高周波半導体装置として、ＳＡＷフィルター部品が基板表面に実装され樹脂封止された場合を例に挙げて説明する。   The conventional high-frequency semiconductor device as described above will be described below. Here, a case where a SAW filter component is mounted on a substrate surface and sealed with a resin as an example of a high-frequency semiconductor device will be described.

図１３は従来の高周波半導体装置の構成を示す断面図である。図１３に示す従来の高周波半導体装置において、特にＳＡＷフィルターは、ＳＡＷフィルター素子５として圧電体の弾性表面波特性を用いて通過帯域を選ぶように構成されるが、樹脂封止工法では、もしＳＡＷフィルター素子５の表面側が封止樹脂で押えられて空間が少なくなると、ＳＡＷフィルターとして動作不良となり適正なフィルター特性が得られず、フィルター素子５として機能しなくなるため、ＳＡＷフィルターとして、従来はＳＡＷフィルター素子５が金属ケースＫＣ１により形成された空間１０で中空封止されたパッケージが用いられていた。
特開２００５−１１００１７号公報 FIG. 13 is a cross-sectional view showing a configuration of a conventional high-frequency semiconductor device. In the conventional high-frequency semiconductor device shown in FIG. 13, the SAW filter is particularly configured to select a pass band using the surface acoustic wave characteristics of the piezoelectric body as the SAW filter element 5, but in the resin sealing method, When the surface side of the SAW filter element 5 is pressed by the sealing resin and the space is reduced, the SAW filter does not function properly as a SAW filter and cannot function as the filter element 5. A package in which the filter element 5 is hollowly sealed in the space 10 formed by the metal case KC1 has been used.
JP 2005-110017 A

しかしながら図１３に示すような従来の高周波半導体装置では、ＳＡＷフィルターを構成するＳＡＷフィルター素子５が、そのＳＡＷフィルター特性を正常に機能させるために金属ケースＫＣ１で封止されているため、ＳＡＷフィルターとしての高さが２乃至３ｍｍとなってしまい、ＳＡＷフィルター自身の薄型化が困難であった。   However, in the conventional high-frequency semiconductor device as shown in FIG. 13, the SAW filter element 5 constituting the SAW filter is sealed with the metal case KC1 in order to make the SAW filter characteristics function normally. The height of the filter becomes 2 to 3 mm, making it difficult to reduce the thickness of the SAW filter itself.

それに対し、半導体装置の薄型化のために基板１に高周波用の半導体素子３をベアチップで実装しているにもかかわらず、その半導体素子３を、金属ケースＫＣ１で封止された厚いＳＡＷフィルターと一緒に樹脂封止するため、封止樹脂が厚くなり、半導体装置としての薄型化を妨げる大きな原因となっていた。   On the other hand, in order to reduce the thickness of the semiconductor device, the high frequency semiconductor element 3 is mounted on the substrate 1 with a bare chip, but the semiconductor element 3 is a thick SAW filter sealed with a metal case KC1. Since the resin sealing is performed together, the sealing resin becomes thick, which is a major cause of hindering the thinning of the semiconductor device.

本発明は、上記従来の問題点を解決するもので、ＳＡＷフィルターを容易に薄型化することができ、かつ特性を損なわずに半導体素子およびチップ型受動部品と同一基板に混載可能とし、半導体装置の薄型化および低価格化を実現することができる高周波半導体装置およびその製造方法を提供する。   SUMMARY OF THE INVENTION The present invention solves the above-described conventional problems, and allows a SAW filter to be thinned easily, and can be mounted on the same substrate as a semiconductor element and a chip-type passive component without impairing characteristics. Provided are a high-frequency semiconductor device capable of realizing a reduction in thickness and price, and a method for manufacturing the same.

上記の課題を解決するために、本発明の請求項１記載の高周波半導体装置は、基板の表面上に半導体素子、チップ型受動部品およびＳＡＷフィルター素子が載置され、それらを覆うように前記基板の表面上全体が一体に樹脂封止された高周波半導体装置において、前記ＳＡＷフィルター素子は、その弾性表面波特性素子が形成された表面側が前記基板の表面に対向するように、前記基板の表面上に載置され、前記基板の表面上の前記ＳＡＷフィルター素子が載置された領域に、前記基板の表面から内部へ形成されたキャビティーと、前記樹脂封止のために予め加圧状態の大気雰囲気中で前記基板の表面上に印刷された液状樹脂が、前記加圧状態から常圧状態に戻った大気雰囲気中で硬化したときに、前記ＳＡＷフィルター素子と前記基板との間に、前記キャビティーと繋がった状態で形成された樹脂封止されない空間とを有することを特徴とする。   In order to solve the above-described problem, in the high-frequency semiconductor device according to claim 1 of the present invention, a semiconductor element, a chip-type passive component, and a SAW filter element are placed on the surface of the substrate, and the substrate covers the substrate. In the high-frequency semiconductor device in which the entire surface of the substrate is integrally sealed with resin, the SAW filter element has a surface of the substrate so that a surface side on which the surface acoustic wave characteristic element is formed faces the surface of the substrate. A cavity formed on the surface of the substrate on the surface of the substrate on which the SAW filter element is mounted; When the liquid resin printed on the surface of the substrate in the air atmosphere is cured in the air atmosphere returned from the pressurized state to the normal pressure state, the SAW filter element and the substrate To, and having the said non resin sealing which is formed in a state of communication with the cavity space.

また、本発明の請求項２記載の高周波半導体装置は、請求項１記載の高周波半導体装置において、前記基板の表面上は、５Ｐａ・ｓ乃至１００Ｐａ・ｓの粘度を有する前記液状樹脂が印刷されたことを特徴とする。   The high-frequency semiconductor device according to claim 2 of the present invention is the high-frequency semiconductor device according to claim 1, wherein the liquid resin having a viscosity of 5 Pa · s to 100 Pa · s is printed on the surface of the substrate. It is characterized by that.

また、本発明の請求項３記載の高周波半導体装置は、請求項１または請求項２記載の高周波半導体装置において、前記液状樹脂は、２０２６ｈＰａ以上の大気雰囲気中で印刷されたことを特徴とする。   The high-frequency semiconductor device according to claim 3 of the present invention is the high-frequency semiconductor device according to claim 1 or 2, wherein the liquid resin is printed in an air atmosphere of 2026 hPa or more.

また、本発明の請求項４記載の高周波半導体装置は、請求項１から請求項３のいずれかに記載の高周波半導体装置において、前記キャビティーは、前記基板の表面上の前記ＳＡＷフィルター素子が載置された領域の中央部に形成された金属箔の孔から内部へ垂直にのびる空気孔からなり、内部の底部および壁面に金属箔が形成されたことを特徴とする。   The high-frequency semiconductor device according to claim 4 of the present invention is the high-frequency semiconductor device according to any one of claims 1 to 3, wherein the SAW filter element on the surface of the substrate is mounted on the cavity. It consists of air holes extending vertically from the hole of the metal foil formed in the center of the placed region to the inside, and the metal foil is formed on the inner bottom and wall surface.

また、本発明の請求項５記載の高周波半導体装置は、請求項４記載の高周波半導体装置において、前記キャビティーは、前記空気孔における前記金属箔の孔の径よりも内部の径の方が大きくなるように形成されたことを特徴とする。   The high-frequency semiconductor device according to claim 5 of the present invention is the high-frequency semiconductor device according to claim 4, wherein the inside diameter of the cavity is larger than the diameter of the hole of the metal foil in the air hole. It was formed as follows.

また、本発明の請求項６記載の高周波半導体装置は、請求項１から請求項５のいずれかに記載の高周波半導体装置において、前記基板は、ガラスクロスエポキシおよびＢＴレジン等を含む熱硬化型樹脂で形成されたことを特徴とする。   The high-frequency semiconductor device according to claim 6 of the present invention is the high-frequency semiconductor device according to any one of claims 1 to 5, wherein the substrate is a thermosetting resin containing glass cloth epoxy, BT resin, or the like. It is formed by.

また、本発明の請求項７記載の高周波半導体装置は、請求項１から請求項５のいずれかに記載の高周波半導体装置において、前記基板は、セラミックで形成されたことを特徴とする。   A high-frequency semiconductor device according to a seventh aspect of the present invention is the high-frequency semiconductor device according to any one of the first to fifth aspects, wherein the substrate is made of ceramic.

また、本発明の請求項８記載の高周波半導体装置の製造方法は、基板の表面上に半導体素子、チップ型受動部品およびＳＡＷフィルター素子が載置され、それらを覆うように前記基板の表面上全体が一体に樹脂封止された高周波半導体装置の製造方法であって、前記基板の表面上の前記ＳＡＷフィルター素子が載置される領域に、前記基板の表面から内部へキャビティーを形成し、前記基板の表面上に、前記キャビティーを覆う状態で、前記ＳＡＷフィルター素子をその弾性表面波特性素子が形成された表面側が前記基板の表面に対向するように載置し、加圧状態の大気雰囲気中で前記基板の表面上に液状樹脂を印刷し、前記大気雰囲気を前記加圧状態から常圧状態に戻した後に前記液状樹脂を硬化させることにより、前記ＳＡＷフィルター素子と前記基板との間に、前記キャビティーと繋がった状態で樹脂封止されない空間を形成することを特徴とする。   In the method for manufacturing a high-frequency semiconductor device according to claim 8 of the present invention, the semiconductor element, the chip-type passive component, and the SAW filter element are placed on the surface of the substrate, and the entire surface of the substrate is covered so as to cover them. Is a method of manufacturing a high frequency semiconductor device integrally sealed with a resin, wherein a cavity is formed from the surface of the substrate to the inside in a region where the SAW filter element is placed on the surface of the substrate, The SAW filter element is placed on the surface of the substrate so as to cover the cavity so that the surface side on which the surface acoustic wave characteristic element is formed is opposed to the surface of the substrate, and is in a pressurized atmosphere. The SAW filter is formed by printing a liquid resin on the surface of the substrate in an atmosphere, and curing the liquid resin after returning the atmospheric atmosphere from the pressurized state to the normal pressure state. Between the child board, and forming a resin-sealed non-space in a state of communication with the cavity.

また、本発明の請求項９記載の高周波半導体装置の製造方法は、請求項８記載の高周波半導体装置の製造方法であって、前記基板の表面上に印刷する前記液状樹脂は、５Ｐａ・ｓ乃至１００Ｐａ・ｓの粘度を有する液状樹脂を使用することを特徴とする。   The high-frequency semiconductor device manufacturing method according to claim 9 of the present invention is the high-frequency semiconductor device manufacturing method according to claim 8, wherein the liquid resin to be printed on the surface of the substrate is 5 Pa · s or more. A liquid resin having a viscosity of 100 Pa · s is used.

また、本発明の請求項１０記載の高周波半導体装置の製造方法は、請求項８または請求項９記載の高周波半導体装置の製造方法であって、前記基板の表面上に前記液状樹脂を印刷する際の大気雰囲気は、２０２６ｈＰａ以上で加圧状態にすることを特徴とする。   A method for manufacturing a high-frequency semiconductor device according to claim 10 of the present invention is the method for manufacturing a high-frequency semiconductor device according to claim 8 or 9, wherein the liquid resin is printed on the surface of the substrate. The air atmosphere is characterized by being in a pressurized state at 2026 hPa or more.

また、本発明の請求項１１記載の高周波半導体装置の製造方法は、請求項８から請求項１０のいずれかに記載の高周波半導体装置の製造方法であって、前記キャビティーは、前記基板の表面上の前記ＳＡＷフィルター素子が載置される領域の中央部に形成した金属箔の孔から内部へ垂直に空気孔をのばして形成し、その内部の底部および壁面に金属箔を形成することを特徴とする。   The method for manufacturing a high-frequency semiconductor device according to claim 11 of the present invention is the method for manufacturing a high-frequency semiconductor device according to any one of claims 8 to 10, wherein the cavity is a surface of the substrate. A metal foil is formed on a bottom portion and a wall surface of the metal foil formed in a central portion of a region where the SAW filter element is mounted by extending an air hole vertically to the inside. And

また、本発明の請求項１２記載の高周波半導体装置の製造方法は、請求項１１記載の高周波半導体装置の製造方法であって、前記キャビティーは、前記空気孔における前記金属箔の孔の径よりも内部の径の方が大きくなるように形成することを特徴とする。   The high-frequency semiconductor device manufacturing method according to claim 12 of the present invention is the high-frequency semiconductor device manufacturing method according to claim 11, wherein the cavity is based on a diameter of the hole of the metal foil in the air hole. Also, the inner diameter is formed to be larger.

また、本発明の請求項１３記載の高周波半導体装置の製造方法は、請求項８から請求項１２のいずれかに記載の高周波半導体装置の製造方法であって、前記基板は、ガラスクロスエポキシおよびＢＴレジン等を含む熱硬化型樹脂で形成することを特徴とする。   A method for manufacturing a high-frequency semiconductor device according to claim 13 of the present invention is the method for manufacturing a high-frequency semiconductor device according to any one of claims 8 to 12, wherein the substrate is made of glass cloth epoxy and BT. It is formed of a thermosetting resin containing a resin or the like.

また、本発明の請求項１４記載の高周波半導体装置の製造方法は、請求項８から請求項１２のいずれかに記載の高周波半導体装置の製造方法であって、前記基板は、セラミックで形成することを特徴とする。   A high-frequency semiconductor device manufacturing method according to claim 14 of the present invention is the high-frequency semiconductor device manufacturing method according to any one of claims 8 to 12, wherein the substrate is formed of ceramic. It is characterized by.

以上のように本発明によれば、基板上への樹脂封止の際に、ＳＡＷフィルター素子と基板間に浸入した封止用樹脂を、基板表面に形成したキャビティー内の空気圧力で押し出すことができ、ＳＡＷフィルター素子の表面側にＳＡＷフィルター素子として機能させるために適正な空間を確保することができる。   As described above, according to the present invention, at the time of resin sealing on the substrate, the sealing resin that has entered between the SAW filter element and the substrate is pushed out by the air pressure in the cavity formed on the substrate surface. Therefore, an appropriate space can be secured on the surface side of the SAW filter element in order to function as a SAW filter element.

そのため、ＳＡＷフィルターを容易に薄型化することができ、かつ特性を損なわずに半導体素子およびチップ型受動部品と同一基板に混載可能とし、半導体装置の薄型化および低価格化を実現することができる。   Therefore, the SAW filter can be easily thinned and can be mixedly mounted on the same substrate as the semiconductor element and the chip-type passive component without impairing the characteristics, and the semiconductor device can be thinned and reduced in price. .

以下、本発明の実施の形態を示す高周波半導体装置およびその製造方法について、図面を参照しながら具体的に説明する。
（実施の形態１）
本発明の実施の形態１の高周波半導体装置およびその製造方法を説明する。 Hereinafter, a high-frequency semiconductor device and a manufacturing method thereof according to an embodiment of the present invention will be specifically described with reference to the drawings.
(Embodiment 1)
A high-frequency semiconductor device and a manufacturing method thereof according to Embodiment 1 of the present invention will be described.

図１は本実施の形態１の高周波半導体装置の構成を示す断面図であり、８００ＭＨｚ乃至２ＧＨｚのＷ−ＣＤＭＡ用の高周波半導体装置の断面図である。基板１は、多層構造の樹脂基板で、表層の金属箔からなる回路パターン２上に半導体素子３、チップ型受動部品４およびＳＡＷフィルター素子５が実装されている。基板１は基材５層銅箔６層の多層構造を有し、表層の銅箔は回路パターン２として、裏層の銅箔は外部接続用の電極として使われる。また各層の銅箔は内部ビアで相互に接続されている。   FIG. 1 is a cross-sectional view showing the configuration of the high-frequency semiconductor device according to the first embodiment, and is a cross-sectional view of a high-frequency semiconductor device for W-CDMA of 800 MHz to 2 GHz. The substrate 1 is a resin substrate having a multilayer structure, and a semiconductor element 3, a chip-type passive component 4 and a SAW filter element 5 are mounted on a circuit pattern 2 made of a surface metal foil. The substrate 1 has a multilayer structure of a base material 5 layers copper foil 6 layers, the surface layer copper foil is used as a circuit pattern 2, and the back layer copper foil is used as an electrode for external connection. Further, the copper foils of the respective layers are connected to each other by internal vias.

図１の基板１は、大きさ８ｍｍ×８ｍｍの製品個片が縦３個×横６個面付けされた縦３２ｍｍ×横５６ｍｍ×総厚み０．６５ｍｍの集合基板で、各個片には半導体素子３が１個と１００５サイズ（長さ１．０ｍｍ×幅０．５ｍｍ×高さ０．５ｍｍ）のチップ型コンデンサ４が５個とＳＡＷフィルター素子５が１個とが実装されている。   A substrate 1 in FIG. 1 is a collective substrate of 32 mm in length, 56 mm in width, and 0.65 mm in total thickness in which product pieces each having a size of 8 mm × 8 mm are arranged 3 × 6 in width, and each piece has a semiconductor element. 3 is one, and five chip-type capacitors 4 of 1005 size (length 1.0 mm × width 0.5 mm × height 0.5 mm) and one SAW filter element 5 are mounted.

基板１には、ＳＡＷフィルター素子５が実装される位置に合わせて、個々に円筒形の垂直なキャビティー６（空孔）が形成されている。キャビティー６は、ＳＡＷフィルター素子５の中心位置に合わせて設けられており、基板１表層の回路パターンにより３００μｍΦの円形で金属箔蓋部１４が形成され、その中心に２００μｍΦの開口部である金属蓋中心孔１５が形成されたものである。金属蓋中心孔１５は表層の金属箔蓋部１４から垂直に３層目の銅箔まで到達しており、深さは約４００μｍである。   In the substrate 1, cylindrical vertical cavities 6 (holes) are individually formed in accordance with the positions where the SAW filter elements 5 are mounted. The cavity 6 is provided in accordance with the center position of the SAW filter element 5, a metal foil lid portion 14 is formed in a circle of 300 μmΦ according to a circuit pattern on the surface layer of the substrate 1, and a metal that is an opening of 200 μmΦ in the center. A lid center hole 15 is formed. The metal lid center hole 15 reaches vertically from the surface metal foil lid portion 14 to the third layer copper foil, and has a depth of about 400 μm.

半導体素子３は、基板１上にベアチップで接着され金属線７で基板１表層の回路パターン２と結線されている。一方、ＳＡＷフィルター素子５は、表面側の電極にはんだバンプ８が形成されており、チップ型コンデンサ４のはんだ付け実装と一緒に、基板１にはんだ付け実装される。   The semiconductor element 3 is bonded onto the substrate 1 with a bare chip and connected to the circuit pattern 2 on the surface layer of the substrate 1 with a metal wire 7. On the other hand, the SAW filter element 5 has solder bumps 8 formed on the electrodes on the surface side, and is soldered and mounted on the substrate 1 together with the soldering mounting of the chip capacitor 4.

ＳＡＷフィルター素子５のはんだ付け後は、ＳＡＷフィルター素子５の表面と基板１間に、はんだバンプ８の高さと回路パターンの厚みを合わせて５０〜７０μｍの間隙が発生している。これらの半導体素子３、チップ型受動部品４およびＳＡＷフィルター素子５を基板１に実装した後に、後述する封止樹脂として用いる液状エポキシ樹脂９による加圧大気雰囲気中での印刷工法により樹脂封止される。   After the soldering of the SAW filter element 5, a gap of 50 to 70 μm is generated between the surface of the SAW filter element 5 and the substrate 1 in accordance with the height of the solder bump 8 and the thickness of the circuit pattern. After mounting the semiconductor element 3, the chip-type passive component 4 and the SAW filter element 5 on the substrate 1, it is resin-sealed by a printing method in a pressurized air atmosphere with a liquid epoxy resin 9 used as a sealing resin described later. The

図２は本実施の形態１の高周波半導体装置の製造方法における樹脂封止工程の概略説明図である。図３は本実施の形態１の高周波半導体装置の製造方法における樹脂封止時のキャビティー部分の樹脂状態変化の説明図である。   FIG. 2 is a schematic explanatory view of a resin sealing step in the method for manufacturing the high-frequency semiconductor device of the first embodiment. FIG. 3 is an explanatory view of a resin state change of the cavity portion at the time of resin sealing in the method for manufacturing the high-frequency semiconductor device of the first embodiment.

本実施の形態の高周波半導体装置の製造方法における樹脂封止工程では、図２（ａ）に示すように加圧容器（チャンバー）中の樹脂印刷装置に基板１を設置し、図２（ｂ）に示すように加圧大気雰囲気中で封止樹脂９を往路方向に印刷し、図２（ｃ）に示すように加圧大気雰囲気中で封止樹脂９を復路方向に印刷し、図２（ｄ）に示すように加圧大気雰囲気中での封止樹脂９の印刷を終了し、図２（ｅ）に示すように加圧容器（チャンバー）内の気圧を常圧に戻す。以上のようにして、高周波半導体装置の製造の際に樹脂封止を実行する。   In the resin sealing step in the manufacturing method of the high-frequency semiconductor device of the present embodiment, as shown in FIG. 2 (a), the substrate 1 is installed in the resin printing device in the pressurized container (chamber), and FIG. As shown in FIG. 2, the sealing resin 9 is printed in the forward direction in a pressurized atmosphere, and as shown in FIG. 2C, the sealing resin 9 is printed in the return direction in the pressurized atmosphere. As shown in d), the printing of the sealing resin 9 in the pressurized air atmosphere is finished, and the atmospheric pressure in the pressurized container (chamber) is returned to normal pressure as shown in FIG. As described above, resin sealing is performed when the high-frequency semiconductor device is manufactured.

上記のように、図２（ａ）〜図２（ｅ）の樹脂封止工程に従って、高周波半導体装置の製造の際に樹脂封止を実行するが、振動子を持つＳＡＷフィルター素子５の表面側に樹脂で封止されない空間１０を残すため、図３（ａ）に示すように樹脂印刷を加圧大気雰囲気で行い、基板１内部に形成されたキャビティー（空孔）６に加圧圧縮された空気１１を残存させ、図３（ｂ）に示すように樹脂印刷後常圧に戻す際に前記キャビティー６内の空気１１が膨張して、ＳＡＷフィルター素子５と基板１間の隙間に浸入した封止樹脂９を押し出し、図３（ｃ）に示すように樹脂で封止されない空間１０が形成される。   As described above, according to the resin sealing process of FIG. 2A to FIG. 2E, the resin sealing is performed when the high-frequency semiconductor device is manufactured, but the surface side of the SAW filter element 5 having the vibrator is used. In order to leave a space 10 that is not sealed with resin, resin printing is performed in a pressurized air atmosphere as shown in FIG. 3A, and pressure is compressed into a cavity (hole) 6 formed in the substrate 1. 3B, when returning to normal pressure after resin printing, the air 11 in the cavity 6 expands and enters the gap between the SAW filter element 5 and the substrate 1 as shown in FIG. The sealed sealing resin 9 is extruded to form a space 10 that is not sealed with the resin as shown in FIG.

樹脂で封止されない空間１０は、液状エポキシ樹脂等の液状樹脂９の粘度および基板１内に設けられたキャビティー６の容積および樹脂印刷時の加圧大気圧１２を選択することで自由に設計、調整することが可能である。なお、樹脂印刷前に基板１内のキャビティー６内に圧縮された空気１１と樹脂印刷時の加圧大気圧１２は同じである。   The space 10 not sealed with resin can be freely designed by selecting the viscosity of the liquid resin 9 such as liquid epoxy resin, the volume of the cavity 6 provided in the substrate 1, and the pressurized atmospheric pressure 12 at the time of resin printing. It is possible to adjust. The air 11 compressed in the cavity 6 in the substrate 1 before resin printing and the pressurized atmospheric pressure 12 at the time of resin printing are the same.

基板１にはんだバンプ８で接続されたＳＡＷフィルター素子５を封止するため、従来のように金属ケースで封止された同部品を使うのと比べて、厚みを大幅に薄くすることができ、さらに１種類の封止樹脂で且つ１回の樹脂成形でＳＡＷフィルター素子表面と基板間に樹脂で埋められていない領域を形成することができるため、工法の簡略化と製造価格を安くすることができる。   Since the SAW filter element 5 connected to the substrate 1 with the solder bumps 8 is sealed, the thickness can be greatly reduced compared to the conventional case where the same part sealed with a metal case is used. Furthermore, since a region not filled with resin can be formed between the surface of the SAW filter element and the substrate with one type of sealing resin and resin molding once, the construction method can be simplified and the manufacturing price can be reduced. it can.

ここで前記加圧大気雰囲気中での樹脂印刷は、印刷装置を加圧大気中で駆動できる機構とし、且つ任意の加圧機能を持つチャンバー（槽）内に設置したものを使って行った。
（実施の形態２）
本発明の実施の形態２の高周波半導体装置およびその製造方法を説明する。 Here, the resin printing in the pressurized air atmosphere was performed by using a mechanism that can drive the printing apparatus in the pressurized air and installed in a chamber having a desired pressure function.
(Embodiment 2)
A high-frequency semiconductor device and a manufacturing method thereof according to Embodiment 2 of the present invention will be described.

図４は本実施の形態２の高周波半導体装置の製造方法における樹脂印刷時の封止樹脂粘度とＳＡＷフィルター素子５と基板１間の樹脂埋まり具合の説明図であり、低粘度、中粘度および高粘度の封止樹脂９を使って封止した場合のＳＡＷフィルター素子５と基板１間の樹脂埋まり具合を示したものである。ここでは、樹脂硬化後にＳＡＷフィルター素子５の近辺領域を断面切断し、ＳＡＷフィルター素子５の表面側において封止樹脂９で埋められていない領域１０をＳＡＷフィルター素子５の長さに対する百分率で示している。   FIG. 4 is an explanatory diagram of the sealing resin viscosity during resin printing and the degree of resin embedding between the SAW filter element 5 and the substrate 1 in the method of manufacturing the high-frequency semiconductor device according to the second embodiment. This shows the degree of resin embedding between the SAW filter element 5 and the substrate 1 when sealed with a sealing resin 9 having a viscosity. Here, the area near the SAW filter element 5 is cut in cross section after the resin is cured, and the area 10 not filled with the sealing resin 9 on the surface side of the SAW filter element 5 is shown as a percentage of the length of the SAW filter element 5. Yes.

まず、ＳＡＷフィルター素子５の形状条件であるが、ＳＡＷフィルター素子５の大きさが１．２ｍｍ×１．０ｍｍで、そのうち圧電体として有効な領域は素子中央の０．８ｍｍ×０．８ｍｍである。また、ＳＡＷフィルター素子５周辺に沿って１００μｍΦのはんだバンプ８が形成されており、ＳＡＷフィルター素子５の基板実装後の取り付け高さ、つまりＳＡＷフィルター素子５の表面と基板１間の距離は、はんだバンプ８の高さと回路パターンの厚みを合わせて５０〜７０μｍとなる。   First, regarding the shape conditions of the SAW filter element 5, the size of the SAW filter element 5 is 1.2 mm × 1.0 mm, and an area effective as a piezoelectric body is 0.8 mm × 0.8 mm in the center of the element. . Solder bumps 8 having a diameter of 100 μm are formed along the periphery of the SAW filter element 5. The mounting height of the SAW filter element 5 after mounting on the substrate, that is, the distance between the surface of the SAW filter element 5 and the substrate 1 is determined by soldering. The total height of the bump 8 and the thickness of the circuit pattern is 50 to 70 μm.

一方、基板１にはＳＡＷフィルター素子５の中心位置に合わせて円筒形のキャビティー６が設けられている。このキャビティー６として、基板表層の回路パターンで形成された３００μｍΦの円形である金属箔蓋部１４の中心に、２００μｍΦの開口部である金属蓋中心孔１５が形成されている。この金属蓋中心孔１５は、表層回路パターンから垂直に３層目の銅箔まで到達しており、深さは約４００μｍである。   On the other hand, the substrate 1 is provided with a cylindrical cavity 6 in accordance with the center position of the SAW filter element 5. As the cavity 6, a metal lid center hole 15, which is an opening of 200 μmΦ, is formed at the center of a 300 μmΦ circular metal foil lid 14 formed by a circuit pattern on the substrate surface layer. The metal lid center hole 15 reaches the third layer copper foil vertically from the surface layer circuit pattern and has a depth of about 400 μm.

硬化前の樹脂粘度が５Ｐａ・ｓ（低粘度）、４０Ｐａ・ｓ（中粘度）、７０Ｐａ・ｓ（中高粘度）１００Ｐａ・ｓ（高粘度）の封止樹脂９を使い、３０３９ｈＰａの大気雰囲気中で樹脂印刷し、その後常圧に戻す印刷工程を経て成形した。ＳＡＷフィルター素子５の表面側の樹脂で埋められていない領域１０は、樹脂樹脂粘度の低い方が大きくなる傾向が見られる。   Using a sealing resin 9 having a resin viscosity before curing of 5 Pa · s (low viscosity), 40 Pa · s (medium viscosity), 70 Pa · s (medium high viscosity) and 100 Pa · s (high viscosity) in an air atmosphere of 3039 hPa The resin was printed and then molded through a printing process for returning to normal pressure. In the region 10 that is not filled with the resin on the surface side of the SAW filter element 5, the lower the resin resin viscosity, the greater the tendency.

しかしながら、粘度が低すぎるとＳＡＷフィルター素子５よりも樹脂で埋められていない領域１０が大きくなってしまうため、前記領域１０をＳＡＷフィルター素子５サイズ以下に抑止できる４０Ｐａ・ｓ以上の粘度が必要であることが判明した。   However, if the viscosity is too low, the region 10 that is not filled with the resin becomes larger than the SAW filter element 5, so that the region 10 needs to have a viscosity of 40 Pa · s or higher that can suppress the SAW filter element 5 to be smaller than the size. It turned out to be.

一方、粘度が高すぎる場合には、ＳＡＷフィルター素子５と基板１間に浸入した封止樹脂９を、常圧に戻した際に発生するキャビティー９内の空気圧力では押し出すことができず、ＳＡＷフィルター素子５がフィルターとして適正に機能するために必要十分な空間を確保することができない。   On the other hand, if the viscosity is too high, the sealing resin 9 that has entered between the SAW filter element 5 and the substrate 1 cannot be pushed out by the air pressure in the cavity 9 that is generated when the pressure is returned to normal pressure. Necessary and sufficient space for the SAW filter element 5 to function properly as a filter cannot be secured.

以上の結果、図４に示すように前記樹脂粘度の条件として４０Ｐａ・ｓ乃至７０Ｐａ・ｓの樹脂粘度が最適であり、この条件で封止樹脂９による印刷工程を経て樹脂硬化させた場合のＳＡＷフィルター素子５と基板１間の樹脂埋まり具合を図５の断面図で示す。   As a result, as shown in FIG. 4, a resin viscosity of 40 Pa · s to 70 Pa · s is optimal as the resin viscosity condition, and the SAW when the resin is cured through a printing process using the sealing resin 9 under this condition. FIG. 5 is a cross-sectional view showing how the resin is buried between the filter element 5 and the substrate 1.

このように４０Ｐａ・ｓ乃至７０Ｐａ・ｓの樹脂粘度で封止樹脂による印刷工程を経て樹脂硬化させた場合、図５に示すように、ＳＡＷフィルター素子５がフィルターとして適正に機能するために必要十分な空間を確保することができ、樹脂成形後もフィルター素子特性を維持することができた。
（実施の形態３）
本発明の実施の形態３の高周波半導体装置およびその製造方法を説明する。 Thus, when the resin is cured through a sealing resin printing step with a resin viscosity of 40 Pa · s to 70 Pa · s, it is necessary and sufficient for the SAW filter element 5 to function properly as a filter, as shown in FIG. A sufficient space can be secured, and the filter element characteristics can be maintained even after resin molding.
(Embodiment 3)
A high-frequency semiconductor device and a manufacturing method thereof according to Embodiment 3 of the present invention will be described.

図６は本実施の形態３の高周波半導体装置の製造方法における印刷時の加圧大気圧とＳＡＷフィルター素子５と基板１間の樹脂埋まり具合の説明図であり、前記ＳＡＷフィルター素子５が実装された基板１を樹脂封止する際、樹脂印刷を常圧乃至高加圧雰囲気中で行った場合のＳＡＷフィルター素子５と基板１間の樹脂埋まり具合を示したものである。ここでは、樹脂硬化後にＳＡＷフィルター素子５の近辺領域を断面切断し、ＳＡＷフィルター素子５の表面側において樹脂で埋められていない領域１０をＳＡＷフィルター素子５の長さに対する百分率で示している。   FIG. 6 is an explanatory view of the pressurized atmospheric pressure at the time of printing and the degree of resin embedding between the SAW filter element 5 and the substrate 1 in the manufacturing method of the high-frequency semiconductor device of the third embodiment, and the SAW filter element 5 is mounted. When the substrate 1 is resin-sealed, the resin filling state between the SAW filter element 5 and the substrate 1 when resin printing is performed in an atmospheric pressure or high-pressure atmosphere is shown. Here, the area near the SAW filter element 5 is cut in cross section after the resin is cured, and the area 10 not filled with the resin on the surface side of the SAW filter element 5 is shown as a percentage of the length of the SAW filter element 5.

前記図５の基板１を用いて、硬化前粘度が７０Ｐａ・ｓの封止樹脂９で、加圧大気圧として常圧（加圧なしの通常の大気圧）、２０２６ｈＰａ（中程度の加圧）、３０３９ｈＰａ（高圧）、４０５２ｈＰａ（超高圧）で印刷し、その後常圧に戻す工程を経て成形した。ＳＡＷフィルター素子５の表面側で樹脂で埋められていない領域１０は、印刷時の加圧大気圧１２が高い方が大きくなる傾向が見られる。   Using the substrate 1 of FIG. 5, the sealing resin 9 having a viscosity before curing of 70 Pa · s, normal pressure (normal atmospheric pressure without pressure), 2026 hPa (medium pressure) as the pressurized atmospheric pressure , 3039 hPa (high pressure), 4052 hPa (ultra-high pressure), and then molded through a process of returning to normal pressure. The region 10 that is not filled with resin on the surface side of the SAW filter element 5 tends to increase as the pressurized atmospheric pressure 12 during printing increases.

しかしながら、印刷時の加圧大気圧１２が高すぎるとキャビティー６内に蓄えられる空気量が多くなり、常圧に戻した際にＳＡＷフィルター素子５サイズよりも樹脂で埋められていない領域１０が大きくなってしまうため、加圧大気圧１２として、前記領域１０をＳＡＷフィルター素子５のサイズ以下に抑止できる３０３９ｈＰａ以下の条件で印刷する必要があることが判明した。   However, if the pressurized atmospheric pressure 12 at the time of printing is too high, the amount of air stored in the cavity 6 increases, and the area 10 that is not filled with resin than the size of the SAW filter element 5 when returning to normal pressure. Therefore, it has been found that it is necessary to print under the condition of 3039 hPa or less that can suppress the area 10 to be equal to or less than the size of the SAW filter element 5 as the pressurized atmospheric pressure 12.

一方、常圧で印刷した場合には、ＳＡＷフィルター素子５と基板１間に浸入した封止樹脂９を、キャビティー６内の空気圧力で押し出すことができず、ＳＡＷフィルター素子５がフィルターとして適正に機能するために必要十分な空間を確保することができない。   On the other hand, when printing is performed under normal pressure, the sealing resin 9 that has entered between the SAW filter element 5 and the substrate 1 cannot be pushed out by the air pressure in the cavity 6, and the SAW filter element 5 is suitable as a filter. It is not possible to secure a necessary and sufficient space to function properly.

以上の結果、図６に示すように前記加圧大気圧の条件として２０２６ｈＰａ乃至３０３９ｈＰａの大気圧が最適であり、このように２０２６ｈＰａ乃至３０３９ｈＰａの大気圧で封止樹脂による印刷工程を経て樹脂硬化させた場合、ＳＡＷフィルター素子５がフィルターとして適正に機能するために必要十分な空間を確保することができ、樹脂成形後もフィルター素子特性を維持することができた。   As a result, as shown in FIG. 6, the atmospheric pressure of 2026 hPa to 3039 hPa is optimal as the pressurized atmospheric pressure condition, and thus the resin is cured through a printing process using a sealing resin at an atmospheric pressure of 2026 hPa to 3039 hPa. In this case, it was possible to secure a necessary and sufficient space for the SAW filter element 5 to function properly as a filter, and to maintain the filter element characteristics even after resin molding.

なお、前記条件は図５記載の基板１と所定の樹脂で行ったものであり、使用する封止樹脂の種類、実装されたＳＡＷフィルター素子５サイズおよび基板１中に形成されるキャビティー６の容積に応じて、最適圧力を適宜選ぶことができる。
（実施の形態４）
本発明の実施の形態４の高周波半導体装置およびその製造方法を説明する。 The conditions described above were performed with the substrate 1 shown in FIG. 5 and a predetermined resin. The type of sealing resin to be used, the size of the mounted SAW filter element 5, and the cavity 6 formed in the substrate 1. The optimum pressure can be appropriately selected according to the volume.
(Embodiment 4)
A high-frequency semiconductor device and a manufacturing method thereof according to Embodiment 4 of the present invention will be described.

図７は本実施の形態４の高周波半導体装置の構成を示す断面図であり、前記図１の高周波半導体装置の応用例で、図７（ａ）に示すように基板１に形成されたキャビティー６がＳＡＷフィルター素子５の中央部下面に位置し、基板１表面の金属箔蓋部１４に形成された金属蓋中心孔１５から基板１内部に垂直な孔が形成され、孔底部および壁面に金属箔１３が形成されたものである。   FIG. 7 is a cross-sectional view showing the configuration of the high-frequency semiconductor device according to the fourth embodiment. In the application example of the high-frequency semiconductor device shown in FIG. 1, a cavity formed in the substrate 1 as shown in FIG. 6 is located on the lower surface of the central portion of the SAW filter element 5, and a hole perpendicular to the inside of the substrate 1 is formed from the metal lid center hole 15 formed in the metal foil lid portion 14 on the surface of the substrate 1. A foil 13 is formed.

基板１表層の回路パターンにより３００μｍΦの円形である金属箔蓋部１４が形成され、その中心に２００μｍΦの金属蓋中心孔１５が形成されている。金属蓋中心孔１５は表層回路パターンから垂直に３層目の銅箔まで到達しており、深さは約４００μｍである。金属蓋中心孔１５はＹＡＧレーザーで形成され、孔壁面および孔底面には銅めっきで金属箔１３が形成され、表層の３００μｍΦの金属箔蓋部１４および３層目の内層銅箔と一体になった構造を有する。   A metal foil lid 14 having a circular shape of 300 μmΦ is formed by a circuit pattern on the surface layer of the substrate 1, and a metal lid center hole 15 of 200 μmΦ is formed at the center thereof. The metal lid center hole 15 reaches the third layer copper foil perpendicularly from the surface layer circuit pattern and has a depth of about 400 μm. The metal lid center hole 15 is formed by a YAG laser, the metal foil 13 is formed by copper plating on the hole wall surface and the bottom surface, and is integrated with the 300 μmφ metal foil lid portion 14 on the surface layer and the third inner layer copper foil. Has a structure.

図７（ｂ）に高周波半導体装置の製造方法における樹脂封止後のキャビティー６部分の樹脂状態を示す。この樹脂封止工程の実行により、ＳＡＷフィルター素子５と基板１との間に樹脂で埋まらない空間１０が形成される。   FIG. 7B shows the resin state of the cavity 6 portion after resin sealing in the method for manufacturing a high-frequency semiconductor device. By executing this resin sealing step, a space 10 that is not filled with resin is formed between the SAW filter element 5 and the substrate 1.

図８は本実施の形態４の高周波半導体装置におけるキャビティーの構成を示す断面図である。
本実施の形態の高周波半導体装置では、キャビティー６全体が金属箔１３で一体になった構造を有するため、キャビティー容積の均一化とそこに蓄えられる圧縮空気量の均一化、さらにはキャビティー６から基板１の内部への空気の漏洩を防ぐ効果が得られる。 FIG. 8 is a cross-sectional view showing the configuration of the cavity in the high-frequency semiconductor device according to the fourth embodiment.
In the high-frequency semiconductor device of the present embodiment, since the entire cavity 6 has a structure integrated with the metal foil 13, the cavity volume is uniformized, the amount of compressed air stored therein is uniformized, and the cavity An effect of preventing air leakage from 6 to the inside of the substrate 1 is obtained.

また、基板１表面のキャビティー６周囲を円形状の回路パターンである金属箔蓋部１４で囲むことにより、ＳＡＷフィルター素子５と基板１の間隙に障壁を作ることができ、液状樹脂９が金属箔蓋部１４を越えてキャビティー６へ浸入することを抑止する効果も得られる。
（実施の形態５）
本発明の実施の形態５の高周波半導体装置およびその製造方法を説明する。 Further, by surrounding the cavity 6 around the surface of the substrate 1 with a metal foil lid portion 14 which is a circular circuit pattern, a barrier can be created in the gap between the SAW filter element 5 and the substrate 1, and the liquid resin 9 is made of metal. An effect of suppressing entry into the cavity 6 beyond the foil lid portion 14 is also obtained.
(Embodiment 5)
A high-frequency semiconductor device and a manufacturing method thereof according to Embodiment 5 of the present invention will be described.

図９は本実施の形態５の高周波半導体装置の構成（内部ビア１６）を示す断面図であり、前記キャビティー６が形成された基板１に、ガラスクロスエポキシおよびＢＴレジン等の熱硬化型樹脂基板が用いられたものである。なお、本実施の形態５の高周波半導体装置における基板外形の大きさ、製品となる個片の大きさおよび基板内の個片面付けは、前記図１の基板の例と同じである。   FIG. 9 is a cross-sectional view showing the configuration (internal via 16) of the high-frequency semiconductor device according to the fifth embodiment. A thermosetting resin such as glass cloth epoxy and BT resin is formed on the substrate 1 on which the cavity 6 is formed. A substrate is used. In the high-frequency semiconductor device according to the fifth embodiment, the size of the outer shape of the substrate, the size of the individual pieces to be a product, and the individual surface mounting in the substrate are the same as the example of the substrate in FIG.

前記樹脂基板１は、回路パターン２に銅箔が使われるため伝播損失が少なく、回路パターン２がエッチングにより形成されるため、幅、厚み精度に優れ、また多層化が容易で各層間の電気接続は、内部ビア１６を形成することで容易に行うことができる。
（実施の形態６）
本発明の実施の形態６の高周波半導体装置およびその製造方法を説明する。 Since the circuit board 2 is made of copper foil, the resin substrate 1 has less propagation loss, and the circuit pattern 2 is formed by etching. Therefore, the resin board 1 has excellent width and thickness accuracy, and can be easily multi-layered. This can be easily performed by forming the internal via 16.
(Embodiment 6)
A high-frequency semiconductor device and a manufacturing method thereof according to Embodiment 6 of the present invention will be described.

図１０は本実施の形態６の高周波半導体装置の構成を示す断面図であり、前記図７の高周波半導体装置の応用例で、図１０（ａ）に示すように、基板１に形成されたキャビティー６がＳＡＷフィルター素子５の中央部下面に位置し、基板１表面に金属箔で形成された孔から基板内部に垂直な孔が形成される際に、前記金属箔蓋部１４に形成された金属蓋中心孔１５の径よりその下側に位置する基板内部のキャビティー６の内径が大きいものである。   FIG. 10 is a cross-sectional view showing the configuration of the high-frequency semiconductor device according to the sixth embodiment. This is an application example of the high-frequency semiconductor device shown in FIG. 7, and a cavity formed on the substrate 1 as shown in FIG. When the tee 6 is located on the lower surface of the center portion of the SAW filter element 5 and a hole perpendicular to the inside of the substrate is formed from the hole formed of the metal foil on the surface of the substrate 1, the tee 6 is formed on the metal foil lid portion 14. The inside diameter of the cavity 6 inside the substrate located below the diameter of the metal lid center hole 15 is larger.

樹脂基板１の材質はＢＴレジンであり、樹脂基板１を製造する際、キャビティー６をＹＡＧレーザーで形成し、銅めっきで孔壁面および孔底面に金属箔１３を形成して、表層の銅箔からなる金属箔蓋部１４および３層目の内層銅箔１３と一体になった構造を形成する。キャビティー６の内径は２００μｍΦ、深さは約４００μｍである。   The resin substrate 1 is made of BT resin. When the resin substrate 1 is manufactured, the cavity 6 is formed with a YAG laser, the metal foil 13 is formed on the hole wall surface and the hole bottom surface by copper plating, and the surface copper foil is formed. A structure integrated with the metal foil lid portion 14 and the third inner layer copper foil 13 is formed. The cavity 6 has an inner diameter of 200 μmΦ and a depth of about 400 μm.

その後、再度、基板１表層に銅めっき形成とエッチングによる回路パターン形成を施し、キャビティー６の表面に中央に孔の開いた円板状銅箔１４を形成する。表層の円板状の銅箔からなる金属箔蓋部１４は３００μｍΦで、その中心に７０μｍΦの金属蓋中心孔１５を有している。   Thereafter, again, the surface layer of the substrate 1 is subjected to copper plating formation and circuit pattern formation by etching to form a disk-shaped copper foil 14 having a hole in the center on the surface of the cavity 6. The metal foil lid portion 14 made of a disk-shaped copper foil as the surface layer has a diameter of 300 μmΦ and a metal lid center hole 15 of 70 μmΦ in the center.

図１０（ｂ）に高周波半導体装置の製造方法における樹脂封止後のキャビティー６部分の樹脂状態を示す。この樹脂封止工程の実行により、ＳＡＷフィルター素子５と基板１との間に樹脂で埋まらない空間１０が形成される。   FIG. 10B shows the resin state of the cavity 6 portion after resin sealing in the method for manufacturing a high-frequency semiconductor device. By executing this resin sealing step, a space 10 that is not filled with resin is formed between the SAW filter element 5 and the substrate 1.

図１１は本実施の形態６の高周波半導体装置におけるキャビティーの構成を示す断面図である。
本実施の形態の高周波半導体装置では、キャビティー６全体が金属箔１３で一体になった構造を有するため、前記図７の実施例と同じくキャビティー容積の均一化とそこに蓄えられる圧縮空気量の均一化、さらにはキャビティー６から基板１内部への空気の漏洩を防ぐ同様の効果が得られる。 FIG. 11 is a cross-sectional view showing the configuration of the cavity in the high-frequency semiconductor device of the sixth embodiment.
In the high-frequency semiconductor device of the present embodiment, since the entire cavity 6 has a structure integrated with the metal foil 13, the cavity volume is made uniform and the amount of compressed air stored in the cavity is the same as in the embodiment of FIG. Similar effects can be obtained, and further, air leakage from the cavity 6 to the inside of the substrate 1 can be prevented.

さらに、金属箔蓋部１４となる銅箔の金属蓋中心孔１５の径をキャビティー６の径より小さくすることができるので、封止樹脂となる液状樹脂９がキャビティー６に浸入するのを抑止しつつ、圧縮空気１１を蓄えるキャビティー容積を増やすことが可能となる。   Furthermore, since the diameter of the metal lid center hole 15 of the copper foil serving as the metal foil lid portion 14 can be made smaller than the diameter of the cavity 6, the liquid resin 9 serving as the sealing resin can enter the cavity 6. While suppressing, it becomes possible to increase the volume of the cavity for storing the compressed air 11.

以上により、ＳＡＷフィルター素子５と基板１間の樹脂で埋められていない領域１０を作る条件が広がり、使用可能な樹脂粘度および印刷時の加圧大気雰囲気の範囲を広げる効果が得られる。
（実施の形態７）
本発明の実施の形態７の高周波半導体装置およびその製造方法を説明する。 As described above, the conditions for creating the region 10 not filled with the resin between the SAW filter element 5 and the substrate 1 are widened, and the effect of expanding the usable resin viscosity and the range of the pressurized air atmosphere during printing can be obtained.
(Embodiment 7)
A high-frequency semiconductor device and a manufacturing method thereof according to Embodiment 7 of the present invention will be described.

図１２は本実施の形態７の高周波半導体装置の構成を示す断面図であり、前記図７の高周波半導体装置の応用例で、前記キャビティー６が形成された基板１としてセラミック基板が用いられたものである。   FIG. 12 is a cross-sectional view showing the configuration of the high-frequency semiconductor device of the seventh embodiment. In the application example of the high-frequency semiconductor device of FIG. 7, a ceramic substrate is used as the substrate 1 on which the cavity 6 is formed. Is.

本実施の形態の高周波半導体装置では、セラミック基板１はグリーンシートと呼ばれる樹脂とセラミックの複合材を薄膜化し、積層、焼成工程を経て製造されるため、予めグリーンシートに切り欠きを設けてキャビティー６構造を形成することが容易である。   In the high-frequency semiconductor device according to the present embodiment, the ceramic substrate 1 is manufactured through a process of laminating and firing a resin-ceramic composite material called a green sheet. It is easy to form a six structure.

図１２のセラミック基板１は、キャビティー６がＳＡＷフィルター素子５の中央部下面に位置し、基板１の表面から内層に向かって垂直な孔が形成されたものである。キャビティー径は２００μｍΦで深さは約４００μｍである。セラミック基板１は樹脂基板と異なり加圧時の基板１内への漏洩の恐れがないため、キャビティー内部、すなわち孔壁面および孔底面に金属箔を形成する必要はない。   The ceramic substrate 1 shown in FIG. 12 has a cavity 6 positioned on the lower surface of the central portion of the SAW filter element 5 and a vertical hole formed from the surface of the substrate 1 toward the inner layer. The cavity diameter is 200 μmΦ and the depth is about 400 μm. Unlike the resin substrate, the ceramic substrate 1 does not have a risk of leakage into the substrate 1 during pressurization. Therefore, it is not necessary to form a metal foil inside the cavity, that is, the hole wall surface and the hole bottom surface.

また、前記図１１のように、キャビティー６の表面にキャビティー径よりも小さい金属蓋中心孔１５を持つ金属箔蓋部１４を形成することも容易である。金属箔蓋部１４となる金属箔の金属蓋中心孔１５の径をキャビティー６の径より小さくすることができるので、封止樹脂となる液状樹脂９がキャビティー６に浸入するのを抑止しつつ、圧縮空気を蓄えるキャビティー容積を増やすことが可能となる。   In addition, as shown in FIG. 11, it is easy to form the metal foil lid portion 14 having the metal lid center hole 15 smaller than the cavity diameter on the surface of the cavity 6. Since the diameter of the metal lid center hole 15 of the metal foil serving as the metal foil lid portion 14 can be made smaller than the diameter of the cavity 6, the liquid resin 9 serving as the sealing resin is prevented from entering the cavity 6. However, it is possible to increase the volume of the cavity that stores the compressed air.

以上の各実施の形態によれば、ＳＡＷフィルター素子と基板間の樹脂で埋められていない領域を作る条件が広がり、使用可能な樹脂粘度および印刷時の加圧大気雰囲気の範囲を広げる効果が得られる。   According to each of the embodiments described above, the conditions for creating a region not filled with the resin between the SAW filter element and the substrate are widened, and the effect of widening the usable resin viscosity and the range of pressurized atmospheric air during printing is obtained. It is done.

以上、具体例を参照しながら本発明の実施の形態についての説明を行ったが、本発明は上記各実施の形態の具体例に限定されるものではなく、はんだバンプで実装された素子表面と基板間に樹脂で埋められていない領域を形成する全ての高周波半導体装置またはその製造方法についても本発明の範囲に属する。   As described above, the embodiments of the present invention have been described with reference to specific examples. However, the present invention is not limited to the specific examples of the respective embodiments described above, and the device surface mounted with solder bumps and All high-frequency semiconductor devices that form regions not filled with resin between the substrates or a method for manufacturing the same also belong to the scope of the present invention.

本発明の高周波半導体装置およびその製造方法は、ＳＡＷフィルターを容易に薄型化することができ、かつ特性を損なわずに半導体素子およびチップ型受動部品と同一基板に混載可能とし、半導体装置の薄型化および低価格化を実現することができるもので、特にＳＡＷフィルターを内蔵した高周波半導体装置に適用できる。   According to the high-frequency semiconductor device and the manufacturing method thereof of the present invention, the SAW filter can be easily thinned and can be mixedly mounted on the same substrate as the semiconductor element and the chip-type passive component without impairing the characteristics. In addition, it can be realized at a low price, and can be applied particularly to a high-frequency semiconductor device incorporating a SAW filter.

本発明の実施の形態１の高周波半導体装置の構成を示す断面図Sectional drawing which shows the structure of the high frequency semiconductor device of Embodiment 1 of this invention 同実施の形態１の高周波半導体装置の製造方法における樹脂封止工程の説明図Explanatory drawing of the resin sealing process in the manufacturing method of the high frequency semiconductor device of Embodiment 1 同実施の形態１の高周波半導体装置の製造方法における樹脂封止時のキャビティー部分の樹脂状態変化の説明図Explanatory drawing of the resin state change of the cavity part at the time of resin sealing in the manufacturing method of the high frequency semiconductor device of Embodiment 1 本発明の実施の形態２の高周波半導体装置の製造方法における印刷時の封止樹脂粘度とＳＡＷフィルター素子と基板間の樹脂埋まり具合の説明図Explanatory drawing of the sealing resin viscosity at the time of printing in the manufacturing method of the high frequency semiconductor device of Embodiment 2 of this invention, and the resin embedding condition between a SAW filter element and a board | substrate. 同実施の形態２の高周波半導体装置の製造方法におけるＳＡＷフィルター素子と基板の関係を示す断面図Sectional drawing which shows the relationship between the SAW filter element and the board | substrate in the manufacturing method of the high frequency semiconductor device of Embodiment 2 本発明の実施の形態３の高周波半導体装置の製造方法における印刷時の加圧大気圧とＳＡＷフィルター素子と基板間の樹脂埋まり具合の説明図Explanatory drawing of the pressurization atmospheric pressure at the time of printing in the manufacturing method of the high frequency semiconductor device of Embodiment 3 of this invention, and the resin embedding condition between a SAW filter element and a board | substrate. 本発明の実施の形態４の高周波半導体装置の構成を示す断面図Sectional drawing which shows the structure of the high frequency semiconductor device of Embodiment 4 of this invention 同実施の形態４の高周波半導体装置におけるキャビティーの構成を示す断面図Sectional drawing which shows the structure of the cavity in the high frequency semiconductor device of Embodiment 4 本発明の実施の形態５の高周波半導体装置の構成（内部ビア）を示す断面図Sectional drawing which shows the structure (internal via) of the high frequency semiconductor device of Embodiment 5 of this invention 本発明の実施の形態６の高周波半導体装置の構成を示す断面図Sectional drawing which shows the structure of the high frequency semiconductor device of Embodiment 6 of this invention 同実施の形態６の高周波半導体装置におけるキャビティーの構成を示す断面図Sectional drawing which shows the structure of the cavity in the high frequency semiconductor device of Embodiment 6 本発明の実施の形態７の高周波半導体装置の構成を示す断面図Sectional drawing which shows the structure of the high frequency semiconductor device of Embodiment 7 of this invention 従来の高周波半導体装置の構成を示す断面図Sectional drawing which shows the structure of the conventional high frequency semiconductor device

符号の説明Explanation of symbols

１ 基板
２ 回路パターン
３ 半導体素子
４ チップ型受動部品（チップ型コンデンサ）
５ ＳＡＷフィルター素子
６ （基板内の）キャビティー
７ 金属線
８ はんだバンプ
９ 液状エポキシ樹脂（封止樹脂）
１０ （樹脂で埋まらない）空間（領域）
１１ 加圧圧縮空気
１２ （印刷時の）加圧大気圧
１３ （キャビティー内部に形成された）金属箔
１４ （キャビティー表面の）金属箔蓋部
１５ （キャビティー表面の）金属蓋中心孔（開口部）
１６ 内部ビア DESCRIPTION OF SYMBOLS 1 Board | substrate 2 Circuit pattern 3 Semiconductor element 4 Chip-type passive component (chip-type capacitor)
5 SAW filter element 6 Cavity (in the substrate) 7 Metal wire 8 Solder bump 9 Liquid epoxy resin (sealing resin)
10 Space (area) (not filled with resin)
11 Pressurized compressed air 12 Pressurized atmospheric pressure (during printing) 13 Metal foil (formed inside the cavity) 14 Metal foil lid part (on the cavity surface) 15 Metal lid center hole (on the cavity surface) ( Aperture)
16 Internal via

Claims (14)

基板の表面上に半導体素子、チップ型受動部品およびＳＡＷフィルター素子が載置され、それらを覆うように前記基板の表面上全体が一体に樹脂封止された高周波半導体装置において、
前記ＳＡＷフィルター素子は、その弾性表面波特性素子が形成された表面側が前記基板の表面に対向するように、前記基板の表面上に載置され、
前記基板の表面上の前記ＳＡＷフィルター素子が載置された領域に、前記基板の表面から内部へ形成されたキャビティーと、
前記樹脂封止のために予め加圧状態の大気雰囲気中で前記基板の表面上に印刷された液状樹脂が、前記加圧状態から常圧状態に戻った大気雰囲気中で硬化したときに、前記ＳＡＷフィルター素子と前記基板との間に、前記キャビティーと繋がった状態で形成された樹脂封止されない空間とを有する
ことを特徴とする高周波半導体装置。 In a high-frequency semiconductor device in which a semiconductor element, a chip-type passive component and a SAW filter element are placed on the surface of the substrate, and the entire surface of the substrate is integrally resin-sealed so as to cover them,
The SAW filter element is placed on the surface of the substrate such that the surface side on which the surface acoustic wave characteristic element is formed faces the surface of the substrate,
A cavity formed from the surface of the substrate to the inside in a region where the SAW filter element is placed on the surface of the substrate;
When the liquid resin printed on the surface of the substrate in an air atmosphere in a pressurized state in advance for the resin sealing is cured in an air atmosphere that has returned to the normal pressure state from the pressurized state, A high-frequency semiconductor device comprising: a SAW filter element and a substrate, and a resin-sealed space formed in a state connected to the cavity. 請求項１記載の高周波半導体装置において、
前記基板の表面上は、５Ｐａ・ｓ乃至１００Ｐａ・ｓの粘度を有する前記液状樹脂が印刷された
ことを特徴とする高周波半導体装置。 The high frequency semiconductor device according to claim 1,
A high frequency semiconductor device, wherein the liquid resin having a viscosity of 5 Pa · s to 100 Pa · s is printed on a surface of the substrate. 請求項１または請求項２記載の高周波半導体装置において、
前記液状樹脂は、２０２６ｈＰａ以上の大気雰囲気中で印刷された
ことを特徴とする高周波半導体装置。 In the high frequency semiconductor device according to claim 1 or 2,
The high-frequency semiconductor device according to claim 1, wherein the liquid resin is printed in an air atmosphere of 2026 hPa or more. 請求項１から請求項３のいずれかに記載の高周波半導体装置において、
前記キャビティーは、
前記基板の表面上の前記ＳＡＷフィルター素子が載置された領域の中央部に形成された金属箔の孔から内部へ垂直にのびる空気孔からなり、
内部の底部および壁面に金属箔が形成された
ことを特徴とする高周波半導体装置。 In the high frequency semiconductor device according to any one of claims 1 to 3,
The cavity is
An air hole extending vertically from the hole of the metal foil formed in the center of the area where the SAW filter element is placed on the surface of the substrate;
A high-frequency semiconductor device, wherein a metal foil is formed on an inner bottom and a wall surface. 請求項４記載の高周波半導体装置において、
前記キャビティーは、前記空気孔における前記金属箔の孔の径よりも内部の径の方が大きくなるように形成された
ことを特徴とする高周波半導体装置。 The high-frequency semiconductor device according to claim 4,
The high-frequency semiconductor device according to claim 1, wherein the cavity is formed such that an inner diameter thereof is larger than a diameter of the hole of the metal foil in the air hole. 請求項１から請求項５のいずれかに記載の高周波半導体装置において、
前記基板は、ガラスクロスエポキシおよびＢＴレジン等を含む熱硬化型樹脂で形成された
ことを特徴とする高周波半導体装置。 In the high frequency semiconductor device according to any one of claims 1 to 5,
The high-frequency semiconductor device according to claim 1, wherein the substrate is made of a thermosetting resin including glass cloth epoxy and BT resin. 請求項１から請求項５のいずれかに記載の高周波半導体装置において、
前記基板は、セラミックで形成された
ことを特徴とする高周波半導体装置。 In the high frequency semiconductor device according to any one of claims 1 to 5,
The high-frequency semiconductor device according to claim 1, wherein the substrate is made of ceramic. 基板の表面上に半導体素子、チップ型受動部品およびＳＡＷフィルター素子が載置され、それらを覆うように前記基板の表面上全体が一体に樹脂封止された高周波半導体装置の製造方法であって、
前記基板の表面上の前記ＳＡＷフィルター素子が載置される領域に、前記基板の表面から内部へキャビティーを形成し、
前記基板の表面上に、前記キャビティーを覆う状態で、前記ＳＡＷフィルター素子をその弾性表面波特性素子が形成された表面側が前記基板の表面に対向するように載置し、
加圧状態の大気雰囲気中で前記基板の表面上に液状樹脂を印刷し、
前記大気雰囲気を前記加圧状態から常圧状態に戻した後に前記液状樹脂を硬化させることにより、前記ＳＡＷフィルター素子と前記基板との間に、前記キャビティーと繋がった状態で樹脂封止されない空間を形成する
ことを特徴とする高周波半導体装置の製造方法。 A method of manufacturing a high-frequency semiconductor device in which a semiconductor element, a chip-type passive component, and a SAW filter element are placed on the surface of a substrate, and the entire surface of the substrate is integrally resin-sealed so as to cover them,
Forming a cavity from the surface of the substrate to the inside in a region where the SAW filter element is placed on the surface of the substrate;
On the surface of the substrate, in a state of covering the cavity, the SAW filter element is placed so that the surface side on which the surface acoustic wave characteristic element is formed faces the surface of the substrate,
Printing a liquid resin on the surface of the substrate in an air atmosphere under pressure,
A space that is not resin-sealed in a state connected to the cavity between the SAW filter element and the substrate by curing the liquid resin after returning the atmospheric atmosphere from the pressurized state to the normal pressure state. A method for manufacturing a high-frequency semiconductor device, characterized in that: 請求項８記載の高周波半導体装置の製造方法であって、
前記基板の表面上に印刷する前記液状樹脂は、５Ｐａ・ｓ乃至１００Ｐａ・ｓの粘度を有する液状樹脂を使用する
ことを特徴とする高周波半導体装置の製造方法。 A method of manufacturing a high-frequency semiconductor device according to claim 8,
The method for manufacturing a high-frequency semiconductor device, wherein the liquid resin printed on the surface of the substrate is a liquid resin having a viscosity of 5 Pa · s to 100 Pa · s. 請求項８または請求項９記載の高周波半導体装置の製造方法であって、
前記基板の表面上に前記液状樹脂を印刷する際の大気雰囲気は、２０２６ｈＰａ以上で加圧状態にする
ことを特徴とする高周波半導体装置の製造方法。 A method for manufacturing a high-frequency semiconductor device according to claim 8 or 9,
A method for manufacturing a high-frequency semiconductor device, wherein an atmospheric condition when the liquid resin is printed on the surface of the substrate is set to a pressurized state at 2026 hPa or more. 請求項８から請求項１０のいずれかに記載の高周波半導体装置の製造方法であって、
前記キャビティーは、
前記基板の表面上の前記ＳＡＷフィルター素子が載置される領域の中央部に形成した金属箔の孔から内部へ垂直に空気孔をのばして形成し、
その内部の底部および壁面に金属箔を形成する
ことを特徴とする高周波半導体装置の製造方法。 A method for manufacturing a high-frequency semiconductor device according to any one of claims 8 to 10,
The cavity is
Formed by extending the air hole vertically from the hole of the metal foil formed at the center of the area on which the SAW filter element is placed on the surface of the substrate,
A method for manufacturing a high-frequency semiconductor device, comprising forming a metal foil on the bottom and wall surface of the interior. 請求項１１記載の高周波半導体装置の製造方法であって、
前記キャビティーは、前記空気孔における前記金属箔の孔の径よりも内部の径の方が大きくなるように形成する
ことを特徴とする高周波半導体装置の製造方法。 A method of manufacturing a high-frequency semiconductor device according to claim 11,
The method of manufacturing a high-frequency semiconductor device, wherein the cavity is formed such that an inner diameter is larger than a diameter of the hole of the metal foil in the air hole. 請求項８から請求項１２のいずれかに記載の高周波半導体装置の製造方法であって、
前記基板は、ガラスクロスエポキシおよびＢＴレジン等を含む熱硬化型樹脂で形成する
ことを特徴とする高周波半導体装置の製造方法。 A method for manufacturing a high-frequency semiconductor device according to any one of claims 8 to 12,
The method of manufacturing a high-frequency semiconductor device, wherein the substrate is formed of a thermosetting resin including glass cloth epoxy and BT resin. 請求項８から請求項１２のいずれかに記載の高周波半導体装置の製造方法であって、
前記基板は、セラミックで形成する
ことを特徴とする高周波半導体装置の製造方法。 A method for manufacturing a high-frequency semiconductor device according to any one of claims 8 to 12,
The method of manufacturing a high-frequency semiconductor device, wherein the substrate is made of ceramic.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100682021B1 (en) * 2005-01-26 2007-02-12 주식회사 천보콘크리트 Sidewalk bolck for water permeability
JP2013531387A (en) * 2010-07-12 2013-08-01 エプコス アーゲー Module package and manufacturing method thereof
US20160105156A1 (en) * 2012-05-31 2016-04-14 Texas Instruments Incorporated Integrated resonator with a mass bias
US20170309679A1 (en) * 2016-04-25 2017-10-26 Murata Manufacturing Co., Ltd. Circuit module

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100682021B1 (en) * 2005-01-26 2007-02-12 주식회사 천보콘크리트 Sidewalk bolck for water permeability
JP2013531387A (en) * 2010-07-12 2013-08-01 エプコス アーゲー Module package and manufacturing method thereof
US9576870B2 (en) 2010-07-12 2017-02-21 Epcos Ag Module package and production method
KR101844565B1 (en) * 2010-07-12 2018-04-02 스냅트랙, 인코포레이티드 Module package and production method
US20160105156A1 (en) * 2012-05-31 2016-04-14 Texas Instruments Incorporated Integrated resonator with a mass bias
US10396746B2 (en) * 2012-05-31 2019-08-27 Texas Instruments Incorporated Method of forming an integrated resonator with a mass bias
US20170309679A1 (en) * 2016-04-25 2017-10-26 Murata Manufacturing Co., Ltd. Circuit module
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