JP2008163365A - Crucible for vapor deposition, vapor deposition method and vapor deposition apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a crucible for vapor deposition, which can efficiently deliver a vapor deposition material to a substrate to be treated and can make the vapor deposition material incident on the substrate to be treated as perpendicularly as possible; to provide a vapor deposition method therefor; and to provide a vapor deposition apparatus therefor. <P>SOLUTION: The crucible 40 for vapor deposition, which heats the vapor deposition material and effuses a vapor flow, comprises: a heating vessel 41 for charging the vapor deposition material therein; a vapor flow exhaust nozzle 43a for spouting the vapor flow; and a cylindrical guide member 42 which surrounds an effusion course of the vapor flow and is opened toward a direction of effusing the vapor flow. The inner circumferential surface of the cylindrical guide member 42 is formed of a concave surface 42d for controlling a flying direction of vapor deposition particles, which is a paraboloid for reflecting the vapor deposition particles that have collided with the paraboloid, toward the effusing direction, and the vapor flow exhaust nozzle 43a is placed in a focal position of the concave surface 42d for controlling the flying direction. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an evaporation crucible for heating an evaporation material to release a vapor flow of the evaporation material, an evaporation method using the evaporation crucible, and an evaporation apparatus including the evaporation crucible.

  In the vacuum vapor deposition method and the vapor deposition apparatus, the vapor deposition material is vaporized by heating the vapor deposition crucible loaded with the vapor deposition material, and the generated vapor stream of molecules and atoms of the vapor deposition material is incident on the substrate to be processed. Then, a thin film is formed on the substrate to be processed (see Non-Patent Document 1, Patent Documents 1 and 2).

  In such a vapor deposition apparatus, for example, as shown in FIG. 7, a substrate holder 819 for holding the substrate to be processed 20 is disposed at an upper position in the vapor deposition chamber 811, and a vapor deposition material is directed toward the substrate to be processed 20 at a lower position. A vapor deposition source 812 is provided for supplying the vapor flow. The evaporation source 812 includes an evaporation crucible 840 loaded with an evaporation material, and a heating device 813 for heating the evaporation material in the evaporation crucible 840. The evaporation crucible 840 has an upper opening. A shutter 814 that opens and closes is disposed. In addition, when forming the thin film which has a predetermined pattern in the to-be-processed substrate 20 using the vacuum evaporation system 800, the vapor deposition by which the mask opening part corresponding to a deposition pattern was formed in the to-be-formed surface side of the to-be-processed substrate 20 Vapor deposition is performed with the masks 31 overlapped.

In addition, in order to improve the arrival rate of vapor deposition molecules and vapor atoms to the film formation surface of the substrate to be processed, the discharge container connected to the vapor deposition crucible is brought close to the substrate to be processed, and the discharge container is connected via the discharge container. There has been devised a vapor deposition apparatus that discharges vapor deposition molecules and vapor atoms toward a film formation surface by a nozzle connected to the (see Patent Document 3).
Siegfried Schiller, by Ulrich Heisig, vacuum deposition (Agne), p. 35-p. 38 Japanese Patent Laid-Open No. 10-195539 JP 10-251838 A JP 2005-336527 A

  In the vacuum vapor deposition apparatus 800, as indicated by an arrow V, the vapor flow is scattered from the vapor deposition crucible 840 toward the entire 360 ° circumferential direction, so that the film thickness varies depending on the in-plane position of the substrate 20 to be processed. Therefore, in the vacuum vapor deposition apparatus 800 shown in FIG. 7, the vapor deposition crucible 840 is shifted from the position directly below the center of the substrate 20 to be processed, and the substrate 20 is rotated to make the film thickness uniform. The structure to be adopted is adopted.

  However, in such a configuration, only about 1% of the vapor deposition molecules and vapor atoms emitted from the vapor deposition crucible 840 reaches the film formation surface of the substrate 20 to be processed, and most of the remainder is the vapor deposition chamber. Since it adheres to the adhesion prevention board (not shown) etc. which are arrange | positioned at the inner wall of 811, there exists a problem that much vapor deposition material is consumed wastefully.

  However, as in the vapor deposition apparatus described in Patent Document 3, when a nozzle that emits vapor deposition molecules and vapor atoms is brought close to the substrate to be processed, it is formed on the substrate to be processed by radiant heat from the evaporation crucible. There is a problem that the thin film is easily thermally altered.

  In any of the conventional vacuum vapor deposition apparatuses described above, the vapor flow scatters in the entire 360 ° circumferential direction, so that the incident direction of the vapor deposition material is inclined depending on the in-plane position of the substrate to be processed. Therefore, in the case of mask vapor deposition, there occurs a situation in which the film thickness becomes thin or no film is formed in the shadowed portion of the vapor deposition mask on the substrate to be processed.

  In view of the above problems, an object of the present invention is to allow the vapor deposition material to efficiently reach the substrate to be processed and to bring the vapor deposition material close to a state where the vapor deposition material is perpendicularly incident on the substrate to be processed. An object of the present invention is to provide a crucible for vapor deposition, a vapor deposition method and a vapor deposition apparatus.

  In order to solve the above problems, in the present invention, in a vapor deposition crucible for heating a vapor deposition material to release a vapor flow of the vapor deposition material, a heating vessel loaded with the vapor deposition material, and a communication in the heating vessel are provided. A steam outlet that ejects the steam flow, and surrounds the opening direction of the steam flow outlet, opens toward the discharge direction of the steam flow, and reflects collided vapor deposition particles toward the discharge direction. And a concave curved surface for controlling the flight direction.

  The “concave curved surface” in the present invention is meant to include not only a configuration in which the entire surface is formed of a curved surface but also a case in which a large number of planes are combined to form a curved surface as a whole.

  In the present invention, the vapor deposition material heated in the heating container is discharged as a vapor flow from the vapor flow outlet and is deposited on the substrate to be processed. At that time, the circumference of the opening direction of the vapor flow outlet (around the vapor flow discharge path) is surrounded by a concave curved surface for controlling the flight direction, and it is obliquely lateral to the vapor deposition particles such as vapor deposition molecules and vapor atoms. The vapor deposition particles that have flown are reflected by the concave curved surface for flight direction control and travel toward the substrate to be processed. For this reason, since the vapor flow is directed to the substrate to be processed with a small divergence angle, the vapor deposition material can be prevented from adhering to the inner wall of the vapor deposition chamber, and the vapor deposition material can efficiently reach the substrate to be processed. Therefore, useless consumption of the vapor deposition material can be reduced. Further, since the vapor flow is directed toward the substrate to be processed with a small divergence angle, the vapor deposition material can be brought close to the state where the vapor deposition material is perpendicularly incident on the substrate to be processed. There are almost no shadows on the mask. Therefore, the deposition pattern accuracy can be improved.

  In the present invention, it is preferable that the flight direction control concave curved surface is a paraboloid, and the vapor flow outlet is open at or near the focal position of the paraboloid. If comprised in this way, each vapor deposition particle which flew to the diagonal side will fly toward the to-be-processed substrate, reflecting on the concave curved surface for flight direction control, and drawing a mutually parallel locus | trajectory. For this reason, since the divergence angle of the vapor flow toward the substrate to be processed can be reduced, the vapor deposition material can efficiently reach the substrate to be processed, and wasteful consumption of the vapor deposition material can be further reduced. Further, since the ratio of vapor deposition particles incident perpendicularly to the substrate to be processed can be increased in the vapor flow, the masked portion of the vapor deposition mask on the substrate to be processed is minimized during mask deposition. be able to. Therefore, the deposition pattern accuracy can be further improved.

  In the present invention, a cylindrical guide member detachably attached to the heating container so as to cover the opening of the heating container is provided, and the flight direction control concave curved surface is formed on the inner peripheral side surface of the cylindrical guide member, It is preferable that the steam flow outlet is formed on the bottom side in the cylindrical guide member. With this configuration, the opening of the heating container can be opened simply by removing the cylindrical guide member from the heating container. Therefore, even when the cylindrical guide member is provided, the vapor deposition material can be easily loaded into the heating container. Can do.

  In the vapor deposition method using the vapor deposition crucible according to the present invention, the flight direction control surface is heated to a temperature equal to or higher than the evaporation temperature of the vapor deposition material, and vapor deposition is performed on the film formation surface of the substrate to be processed. If comprised in this way, since each vapor deposition particle which flew to the diagonal side collides completely elastically with the concave curved surface for flight direction control, vapor deposition particle can be reflected in a predetermined direction. Further, since the vapor deposition particles do not accumulate on the flight direction control concave curved surface, the vapor deposition material can efficiently reach the substrate to be processed, and wasteful consumption of the vapor deposition material can be further reduced.

  The vapor deposition method according to the present invention is a mask vapor deposition method in which vapor deposition is performed in a state where a vapor deposition mask having a mask opening corresponding to a vapor deposition pattern for the substrate to be processed is disposed on the film formation surface side of the substrate to be processed. It is effective when applied to. When the vapor deposition material is close to a state where the vapor deposition material is perpendicularly incident on the substrate to be processed, there is almost no shadowed portion of the vapor deposition mask on the substrate to be processed at the time of mask vapor deposition. Pattern accuracy can be improved.

  In the vapor deposition apparatus provided with the vapor deposition crucible according to the present invention in the vapor deposition chamber, a configuration in which one vapor deposition crucible is provided in the vapor deposition chamber can be adopted. In addition, when the substrate to be processed is large, a configuration in which a plurality of the evaporation crucibles are arranged at positions facing the film formation surface of the substrate to be processed in the vapor deposition chamber may be adopted. If comprised in this way, even when vapor-depositing with respect to a large to-be-processed substrate, a vapor deposition material can be efficiently reached with respect to a to-be-processed substrate, and the useless consumption of vapor deposition material can be reduced.

  The vapor deposition apparatus according to the present invention preferably includes a heating apparatus that heats the inside of the heating container, and the heating apparatus is capable of heating the concave curved surface for controlling the flight direction to a temperature equal to or higher than an evaporation temperature of the vapor deposition material. That is, even when the flying curved surface for controlling the flight direction is heated, the temperature thereof may be approximately the same as that of the heating container, so that the heating container and the flying curved surface for controlling the flying direction can be heated by an integral heating device. With such a configuration, the configuration of the vapor deposition apparatus can be simplified.

  A vapor deposition crucible, vapor deposition method and vapor deposition apparatus to which the present invention is applied will be described with reference to the drawings. In the following embodiments, a case where an organic EL device is manufactured using the evaporation crucible, the evaporation method, and the evaporation apparatus of the present invention will be exemplified.

(Configuration example of organic EL device)
FIG. 1 is a cross-sectional view of an essential part of an organic EL device (organic electroluminescence device) to which the present invention is applied. An organic EL device 1 shown in FIG. 1 is used as a line head used in a display device or an electrophotographic printer, and includes a light emitting element group 3A formed by arranging a plurality of organic EL elements 3. I have. The organic EL element 3 includes, for example, a pixel electrode 4 functioning as an anode, a hole transport layer 6 for injecting / transporting holes from the pixel electrode 4, a light emitting layer 7 made of an organic EL material, and injecting electrons. / The electron transport layer 8 to be transported, the cathode 9, and the protective layer are laminated in this order. In this embodiment, on the element substrate 2, a circuit portion 5 including a driving transistor 5a (thin film transistor) and the like electrically connected to the pixel electrode 4 is formed on the lower layer side of the light emitting element group 3A.

  When the organic EL device 1 is a bottom emission method, light emitted from the light emitting layer 7 is emitted from the pixel electrode 4 side, so that the base of the element substrate 2 is glass, quartz, resin (plastic, plastic film) A transparent substrate such as is used. At this time, if the cathode 9 is formed of a light reflecting film, the light emitted from the light emitting layer 7 can be reflected by the cathode 9 and emitted from the transparent substrate side. On the other hand, when the organic EL device 1 is a top emission method, the light emitted from the light emitting layer 7 is emitted from the cathode 9 side, and therefore the base of the element substrate 2 does not need to be transparent. However, even when the organic EL device 1 is a top emission type, a light is emitted from the light emitting layer 7 by disposing a reflective layer (not shown) on the surface opposite to the light emitting side with respect to the element substrate 2. Is emitted from the cathode 9 side, it is necessary to use a transparent substrate as the base of the element substrate 2. Further, when the organic EL device 1 is a top emission system, a reflective layer is formed between the base of the element substrate 2 and the light emitting layer 7, and light emitted from the light emitting layer 7 is emitted from the cathode 9 side. In some cases, the base of the element substrate 2 does not need to be transparent.

  In order to manufacture such an organic EL device 1, each layer is formed using a semiconductor process such as a film forming process using a CVD method or a vacuum deposition method, a patterning process using a resist mask, or the like on the element substrate 2. Is formed. However, since the organic functional layers such as the hole transport layer 6, the light emitting layer 7, and the electron transport layer 8 are easily deteriorated by moisture and oxygen, when the organic functional layer such as the light emitting layer 7 is formed, the electron transport is further performed. If a patterning process using a resist mask is performed when forming the cathode 9 on the upper layer of the layer 8, the organic functional layer is deteriorated by moisture or oxygen when the resist mask is removed with an etching solution or oxygen plasma. . Therefore, in the present embodiment, when forming the organic functional layer such as the light emitting layer 7 and further when forming the cathode 9, the element substrate is formed by performing mask vapor deposition using the following vapor deposition crucible and vapor deposition apparatus. A thin film having a predetermined shape is formed on 2 and a patterning process using a resist mask is not performed.

(Configuration of vapor deposition equipment)
FIG. 2 is a schematic configuration diagram showing a configuration of a vapor deposition apparatus to which the present invention is applied. As shown in FIG. 2, in the vacuum vapor deposition apparatus 100 of the present embodiment, a substrate holder 19 that holds a substrate 20 (element substrate 2) and a vapor deposition mask 31 is disposed at an upper position in the vapor deposition chamber 11. The vapor deposition mask 31 is overlaid at a predetermined position on the lower surface side (film formation surface side) of the substrate 20 to be processed. Although the configuration of the vapor deposition mask 31 will be described later with reference to FIGS. 3A and 3B, a plurality of mask openings 310 corresponding to the vapor deposition pattern for the substrate to be processed 20 are formed.

  A vapor deposition source 12 that supplies a vapor flow made of vapor deposition particles such as vapor deposition molecules and vapor atoms toward the substrate 20 to be processed is disposed at a lower position in the vapor deposition chamber 11. The vapor deposition source 12 includes a vapor deposition crucible 40 loaded with a vapor deposition material, and a heating device 13 for heating the vapor deposition material in the vapor deposition crucible 40. A shutter 14 that opens and closes the opening is configured. The detailed configuration of the evaporation crucible 40 will be described later with reference to FIGS. 4 and 5, and includes a heating container 41 and a cylindrical guide member 42.

  The heating device 13 includes a bottomed cylindrical heat block 131 provided with a recess 133 in which the entire vapor deposition crucible 40 can be mounted, and a heating element 132 such as a heating wire disposed in the heat block 131. The power supply to the heating element 132 is controlled while monitoring the temperature of the heat block 131 or the evaporation crucible 40 with a thermocouple or the like. The heating device 13 is disposed in a recess 111 formed at the bottom of the vapor deposition chamber 11 with the vapor deposition crucible 40 held in the heat block 131.

  In the vacuum vapor deposition apparatus 100 of this embodiment, the vapor deposition crucible 40 is disposed immediately below the center of the substrate 20 to be processed, and performs vapor deposition with the substrate 20 to be processed fixed.

(Configuration of evaporation mask 31)
3A and 3B are explanatory views of a vapor deposition mask. Of the mask members 30A and 30B shown in FIGS. 3A and 3B, the mask member 30A shown in FIG. 3A is a rectangular thin plate-shaped deposition mask having a thickness of about 0.25 to 0.5 mm. 31 is attached to a rectangular frame 33. The deposition mask 31 and the frame 33 are each made of a metal material (for example, stainless steel, invar, 42 alloy, nickel alloy, etc.), glass, ceramics, silicon, etc., and the deposition mask 31 is preferably made of polycrystalline silicon. . The vapor deposition mask 31 has a plurality of mask openings 310 corresponding to the vapor deposition pattern for the substrate to be processed 20 formed in parallel and at regular intervals. The frame 33 is arranged between the support substrate 34 on which the opening 340 having a size substantially the same as that of the vapor deposition mask 31 is formed and the mask opening 310 of the vapor deposition mask 31, and between the mask openings 310. A beam portion 35 to be supported and a fixing member 36 that applies a tensile force in the longitudinal direction to the beam portion 35 and is fixed to the support substrate 34 are provided. The beam portion 35 is disposed along the longitudinal direction of the mask opening portion 310 between the mask opening portions 310 and has a narrower width dimension than a region sandwiched between the mask opening portions 310. The beam portion 35 is made of a metal material (for example, stainless steel, invar, 42 alloy, nickel alloy), glass, ceramics, silicon, SUS430, or the like.

  The mask member 30B shown in FIG. 3B has a configuration in which a plurality of chip-shaped deposition masks 31 are attached to a support substrate 37 that forms a base substrate, and each of the plurality of deposition masks 31 is aligned. Then, it is bonded to the support substrate 37 by a method such as anodic bonding or adhesive. The support substrate 37 is provided with a plurality of openings 370 in parallel and at regular intervals. Each of the plurality of vapor deposition masks 31 is fixed on the support substrate 37 so as to close the openings 370. The vapor deposition mask 31 is provided with a plurality of long-hole-shaped mask openings 310 corresponding to the vapor deposition pattern for the substrate 20 to be processed in parallel at regular intervals. The evaporation mask 31 is made of single crystal silicon having a plane orientation (100), single crystal silicon having a plane orientation (110), or the like, and the mask opening 310 is formed by a photolithography technique or an organic material such as tetramethyl aluminum oxide. It is formed by a wet etching technique using an alkaline aqueous solution such as an inorganic hydroxide such as a potassium hydroxide or potassium hydroxide or sodium hydroxide. As the support substrate 37, a transparent substrate made of alkali-free glass, borosilicate glass, soda glass, quartz, or the like is used.

(Configuration of the evaporation crucible 40)
4A and 4B are an exploded perspective view and a cross-sectional view, respectively, of a vapor deposition crucible to which the present invention is applied. As shown in FIGS. 2, 4 (a), and 4 (b), the evaporation crucible 40 is attached to the heating container 41 so as to cover the heating container 41 loaded with the evaporation material and the upper opening 41 a of the heating container 41. It is comprised from the cylindrical guide member 42 connected.

  The heating container 41 has a bottomed cylindrical shape, and is disposed at the bottom of the recess 133 of the heat block 131 shown in FIG. 2 with the upper opening 41a facing upward. As for the side wall 41b of the heating container 41, the upper half part has a small diameter compared with the lower half part, and the external thread 41c is formed in the outer peripheral surface of an upper half part.

  The cylindrical guide member 42 has a bottomed cylindrical shape, and is threadedly engaged with a male screw 41 c formed on the side wall 41 b of the heating container 41 on the inner peripheral surface of the cylindrical portion 42 e formed at the lower end. A female screw 42h is formed. Therefore, the heating container 41 and the cylindrical guide member 42 can be switched between a state where they are connected by the male screw 41c and the female screw 42h, and a state where they are separated. For this reason, in a state where the heating container 41 and the cylindrical guide member 42 are connected, the upper opening 41a of the heating container 41 is blocked by the bottom portion 42a of the cylindrical guide member 42, and the heating container 41 and the cylindrical guide member 42 are closed. Are separated from each other, the upper opening 41a of the heating container 41 is opened. Further, when the evaporation crucible 40 is disposed inside the recess 133 of the heat block 131 shown in FIG. 2 in a state where the heating container 41 and the cylindrical guide member 42 are connected, the entire outer peripheral side surface and bottom of the heating container 41 are heated. The entire outer peripheral side surface of the cylindrical guide member 42 is in contact with the inner peripheral wall of the heat block 131 in contact with the inner peripheral wall and the bottom wall of the block 131. Therefore, the heating device 13 can heat the vapor deposition material loaded inside through the heating container 41 and can heat the cylindrical guide member 42.

  A small hole 42f passes through the center of the bottom portion 42a of the heating container 41, and a cylindrical needle 43 is attached to the small hole 42f. Here, the upper end of the needle 43 is positioned above the bottom portion 42 a of the heating container 41 by a predetermined dimension. At the upper end of the needle 43, the vapor deposition material is heated to a temperature equal to or higher than the evaporation temperature inside the heating container 41. The vapor flow outlet 43a from which the vapor of the vapor deposition material is ejected is opened. On the other hand, the lower end of the needle 43 reaches the inside of the heating container 41, and the steam flow outlet 43 a communicates with the inside of the heating container 41.

  The cylindrical body part 42b on the upper side of the cylindrical guide member 42 opens toward the discharge direction of the steam flow ejected from the steam flow outlet 43a, and the steam is directed toward the substrate 20 to be processed from the opening part 42c. A stream is released. In the cylindrical guide member 42, the inner peripheral surface of the cylindrical body 42b is a concave curved surface that continuously increases in diameter from the bottom 42a toward the opening 42c. See FIG. 5 (a). As will be described later, when the vapor deposition particles (vapor deposition molecules or vapor atoms) contained in the vapor flow ejected from the vapor flow outlet 43a collide with the inner peripheral surface of the cylindrical body portion 42b, The flight direction control concave curved surface 42d is reflected toward the emission direction. In this embodiment, the flight direction control concave curved surface 42d is a parabolic surface, and a steam flow outlet 43a is disposed at or near the focal position of the parabolic surface. That is, the flight direction control concave curved surface 42d is a curved surface obtained by rotating a parabola around the axis of the needle 43 as an axis of symmetry.

  Such a heating container 41 and the cylindrical guide member 42 (including the needle 43) can be manufactured by, for example, scraping pure copper with a lathe or the like. Further, when there is an evaporation material that reacts with copper, the heating container 41 and the cylindrical guide member 42 are made of quartz, silicon carbide, graphite, alumina, or the like.

(Mask deposition method)
5A, 5B, and 5C are explanatory views showing the behavior of the vapor deposition flow when mask vapor deposition is performed using the vapor deposition crucible and vapor deposition apparatus to which the present invention is applied. When the mask vapor deposition is performed on the substrate 20 to be processed using the vacuum vapor deposition apparatus 100 shown in FIG. 2, first, the inside of the vapor deposition chamber 11 is evacuated, and the heating apparatus 13 contains the inside of the heating container 41 of the vapor deposition crucible 40. The vapor deposition material is heated to a temperature above its evaporation temperature. At that time, the cylindrical guide member 42 is also heated to a temperature equal to or higher than the evaporation temperature of the vapor deposition material by the heating device 13. Meanwhile, the shutter 14 is in a position to close the opening of the evaporation crucible 40 (opening 42c of the cylindrical guide member 42).

  When the vapor deposition material in the heating container 41 reaches a predetermined temperature, the shutter 14 is moved to the open position. As a result, the vapor flow of the vapor deposition material is ejected from the vapor flow outlet 43a formed at the distal end portion of the needle 43, and the vapor flow passes through the inside of the cylindrical body portion 42b through the opening 42c. Is released towards As a result, on the film formation surface of the substrate 20 to be processed, a thin film is formed only in a region overlapping with the mask opening 310 of the evaporation mask 31. For example, when the light emitting layer 7 shown in FIG. 1 is formed, the low molecular organic EL material is heated and evaporated, and the light emitting layer 7 is formed on the lower surface of the substrate 20 to be processed through the mask opening 310 of the evaporation mask 31. It is formed in a stripe shape. The formation of the hole transport layer 6, the electron transport layer 8, the cathode 9 and the like is performed in substantially the same manner.

  At that time, among the vapor deposition particles included in the vapor flow, the vapor deposition particles flying obliquely sideward collide with the flight direction control concave curved surface 42d as shown in FIG. Since the curved surface 42d is heated to a temperature equal to or higher than the evaporation temperature of the vapor deposition material, the vapor deposition particles (vapor deposition molecules or vapor atoms) are completely formed in the flight direction control concave curved surface 42d as shown in FIG. Elastic collision and reflection. Therefore, the incident angle θ1 of the vapor deposition particles with respect to the flying curved surface 42d for controlling the flight direction is equal to the reflection angle θ2 of the vapor deposition particles with respect to the flying curved surface 42d for controlling the flight direction. The flight direction control concave curved surface 42d is a parabolic surface, and a steam flow outlet 43a is disposed at the focal position of the parabolic surface. For this reason, the vapor deposition particles colliding with the flight direction control concave curved surface 42d are emitted from the opening 42c toward the substrate to be processed 20 while drawing the locus indicated by the arrow V1 in FIG. 5A, and from the opening 42c. The trajectories after exiting are parallel to each other.

On the other hand, among the steam flows ejected from the steam flow outlet 43a, the steam flow released from the opening 42c without colliding with the flight direction control concave curved surface 42d is indicated by an arrow V2 in FIG. As shown by, the gas is discharged with a divergence angle defined by the radius r of the opening 42c and the distance d between the opening 42c and the steam flow outlet 43a in the steam flow discharge direction. That is, the divergence angle θ3 of the vapor flow discharged from the opening 42c is expressed by the following equation tan (θ3) = r / d
It is represented by Accordingly, when the radius r of the opening 42c is 20 mm and the distance d between the opening 42c and the steam flow outlet 43a in the steam flow discharge direction is 70 mm, the divergence angle of the steam flow from the opening 42c is 16 °. Further, when the radius r of the opening 42c is 15 mm and the distance d between the opening 42c and the steam flow outlet 43a in the vapor flow discharge direction is 120 mm, the divergence angle of the steam flow from the opening 42c is 7.1 °.

Therefore, in the vacuum vapor deposition apparatus 100 shown in FIG. 2, when the radius of the film formation region with respect to the substrate to be processed 20 is S and the distance between the opening 42c and the substrate to be processed 20 in the vapor flow discharge direction is T, The radius S of the film formation region with respect to the substrate 20 to be processed is given by the following equation: tan (θ3) = T / (S + d) ≈T / S
It is represented by

  Moreover, the maximum value of the incident angle of the vapor deposition material with respect to the to-be-processed substrate 20 is represented by ± θ3. Therefore, when the radius r of the opening 42c is 20 mm and the distance d between the opening 42c and the vapor flow outlet 43a in the vapor flow discharge direction is 70 mm, the incident angle of the vapor deposition material with respect to the substrate 20 to be processed The maximum value is ± 16 °, and the incident angle of the vapor deposition material with respect to the substrate to be processed 20 can be close to 0 °.

  Further, when the radius r of the opening 42c is 15 mm and the distance d between the opening 42c and the vapor flow outlet 43a in the vapor flow discharge direction is 120 mm, the incident angle of the vapor deposition material with respect to the substrate 20 to be processed The maximum value is ± 7.1 °, and the incident angle of the vapor deposition material with respect to the target substrate 20 can be made closer to 0 °. In this case, the incident angle of the vapor deposition material with respect to the substrate to be processed 20 is 7.1 ° on the outermost peripheral side of the film formation region with respect to the substrate to be processed 20 and is less than 7.1 ° on the inner side. Therefore, even when the thickness of the vapor deposition mask 31 is increased to 0.08 mm from the viewpoint of strength, the shadow by the vapor deposition mask 31 is 9.9 μm wide and narrow. In addition, if the mask opening 310 is tapered in the vapor deposition mask 31, the shadow caused by the vapor deposition mask 31 can be further compressed.

(Main effects of this form)
As described above, in this embodiment, the vapor deposition material heated in the heating container 41 is discharged as a vapor flow from the vapor flow outlet 43a and is deposited on the substrate 20 to be processed. At that time, the discharge path of the vapor flow is surrounded by the flight direction control concave curved surface 42d, and the flight direction control concave curved surface 42d is heated to the evaporation temperature or higher of the vapor deposition material. For this reason, among the vapor deposition particles such as vapor deposition molecules and vapor deposition atoms, the vapor deposition particles flying obliquely to the side are reflected by the concave curved surface 42d for flight direction control and travel toward the substrate 20 to be processed. Accordingly, since the vapor flow is directed toward the substrate 20 to be processed with a small divergence angle, it is possible to prevent the vapor deposition particles from adhering to the inner wall of the vapor deposition chamber 11, so that the vapor deposition material can efficiently reach the substrate 20 to be processed. Can do. Therefore, useless consumption of the vapor deposition material can be reduced.

  In addition, since the vapor deposition particles can be brought into a state of being perpendicularly incident on the substrate 20 to be processed, there is almost no shadowed portion of the vapor deposition mask 31 in the substrate 20 to be processed at the time of mask vapor deposition. In particular, in this embodiment, the flight direction control concave curved surface 42d is a parabolic surface, and the steam flow outlet 43a is opened at the focal position of the parabolic surface. For this reason, the vapor deposition particles flying obliquely to the side are each reflected by the concave curved surface 42d for flight direction control and fly toward the substrate 20 to be processed while drawing parallel trajectories. Accordingly, since the ratio of vapor deposition particles perpendicularly incident on the substrate 20 to be processed can be increased in the vapor flow, the masked portion of the deposition mask 31 is minimized in the substrate 20 during mask deposition. It can be stopped to the limit. Therefore, even when a thick deposition mask 31 having a thickness of 0.08 mm or the like is used, the deposition pattern accuracy can be improved.

  Further, if a thick evaporation mask 31 having a thickness of 0.08 mm or the like is used, the evaporation mask 31 can be prevented from being bent due to its own weight, so that the evaporation mask 31 and the substrate 20 to be processed can be stacked in close contact. it can. Therefore, no gap is generated between the vapor deposition mask 31 and the substrate to be processed 20, and the vapor deposition pattern accuracy can be improved also in this respect.

  Furthermore, in this embodiment, the cylindrical guide member 42 is detachably attached to the heating container 41, and the flight direction control concave curved surface 42d is formed on the inner peripheral side surface of the cylindrical guide member 42, and the cylindrical guide member A steam flow outlet 43 a is formed on the bottom side of the inside 42. For this reason, since the upper opening 41a of the heating container 41 can be completely opened simply by removing the cylindrical guide member 42 from the heating container 41, even when the cylindrical guide member 42 is provided, The vapor deposition material can be easily loaded.

  Furthermore, this embodiment employs a configuration in which the flight direction control concave curved surface 42d is heated to a temperature equal to or higher than the evaporation temperature of the vapor deposition material by the heating device 13 that heats the inside of the heating container 41. That is, even when the flying curved surface 42d for controlling the flight direction is heated, the temperature may be substantially the same as that of the heating container 41, so the heating container 41 and the recessed curved surface 42d for flying direction control are heated by the integrated heating device 13. Therefore, the configuration of the vacuum deposition apparatus 100 can be simplified.

[Other embodiments]
In the above embodiment, one deposition crucible 40 is arranged for one substrate 20 to be processed. However, when the size of one substrate 20 is large, as shown in FIG. In the vapor deposition chamber 11 of the vacuum vapor deposition apparatus 100, a plurality of vapor deposition crucibles 40 may be disposed at positions facing the substrate 20 to be processed. If comprised in this way, even when vapor-depositing with respect to the large to-be-processed substrate 20, a vapor deposition material can be efficiently reached with respect to the to-be-processed substrate 20, and the useless consumption of vapor deposition material can be reduced.

  In the above embodiment, the flight direction control concave curved surface 42d is a parabolic surface, and the steam flow outlet 43a is disposed at the focal position of the parabolic surface. A steam flow outlet 43a may be arranged.

  In the above form, the flight direction control concave curved surface 42d is a paraboloid, but if the colliding vapor deposition particles can be reflected in the emission direction, the flight direction control concave curved surface 42d is an elliptical surface. You may employ | adopt the structure set as the hyperboloid, and also the structure which combined these curved surfaces. In configuring the concave curved surface, a configuration in which a curved surface is formed as a whole by combining a large number of planes may be adopted in addition to a configuration in which the entire curved surface is formed.

  In the embodiment described with reference to FIG. 2, the vapor deposition crucible is arranged at a position directly below the center of the substrate 20 to be processed, and vapor deposition is performed in a state where the substrate 20 to be processed is fixed. As described with reference to FIG. 4, the deposition crucible 40 to which the present invention is applied is disposed laterally from a position directly below the center of the substrate 20 to be processed, and the substrate 20 is rotated about its center. You may employ | adopt the structure which performs vapor deposition.

  In the above embodiment, the deposition crucible 40, the deposition method, and the vacuum deposition apparatus 100 to which the present invention is applied are applied when performing mask deposition, but the deposition mask 31 is not used and the deposition of the substrate 20 to be processed is performed. The vapor deposition crucible 40, vapor deposition method and vacuum vapor deposition apparatus of the present invention may also be applied when forming a thin film having a uniform film thickness on the entire surface. Also in this case, there is an advantage that it is possible to prevent wasteful consumption of the vapor deposition material and to form a thin film with uniform orientation.

It is principal part sectional drawing of the organic electroluminescent apparatus with which this invention is applied. It is a schematic block diagram of the vapor deposition apparatus to which this invention is applied. (A), (b) is explanatory drawing of the mask for vapor deposition. (A), (b) is respectively the exploded perspective view and sectional drawing of the crucible for vapor deposition to which this invention is applied. (A), (b), (c) is explanatory drawing which shows the behavior of the vapor deposition flow at the time of using the crucible for vapor deposition to which this invention is applied. It is a schematic block diagram of the vapor deposition apparatus which concerns on another embodiment to which this invention is applied. It is a schematic block diagram of the conventional vapor deposition apparatus.

Explanation of symbols

1 .... Organic EL device, 2 .... Element substrate, 3 .... Organic EL element, 7 .... Light emitting layer, 9 .... Cathode, 11 .... Deposition chamber, 12 .... Deposition source, 20 .... Substrate 31 .. Deposition mask, 40 .. Deposition crucible, 41 .. Heating vessel, 42 .. Cylindrical guide member, 42 d .. Concave surface for flight direction control, 43 .. Needle, 43 a. 100 ... Vacuum vapor deposition equipment (vapor deposition equipment)

Claims (8)

In a vapor deposition crucible for heating a vapor deposition material and releasing a vapor flow of the vapor deposition material,
A heating vessel charged with the vapor deposition material;
A steam flow outlet for ejecting the steam flow in communication with the heating vessel;
A concave curved surface for controlling the flight direction that surrounds the opening direction of the vapor flow outlet and opens toward the discharge direction of the vapor flow, and reflects the collided vapor deposition particles toward the discharge direction;
A vapor deposition crucible characterized by comprising:   2. The vapor deposition crucible according to claim 1, wherein the concave curved surface for flight direction control is formed of a parabolic surface, and the vapor flow outlet is open at or near a focal position of the parabolic surface. . A cylindrical guide member detachably attached to the heating container so as to cover the opening of the heating container,
The concave curved surface for flight direction control is formed on the inner peripheral side surface of the cylindrical guide member,
The vapor deposition crucible according to claim 1 or 2, wherein the vapor flow outlet is formed on a bottom side in the cylindrical guide member. A vapor deposition method using the vapor deposition crucible according to any one of claims 1 to 3,
A vapor deposition method, wherein the flight direction control surface is heated to a temperature equal to or higher than an evaporation temperature of the vapor deposition material, and vapor deposition is performed on a film deposition surface of a substrate to be processed.   5. The vapor deposition is performed in a state in which a vapor deposition mask having a mask opening corresponding to a vapor deposition pattern for the substrate to be processed is disposed on the film deposition surface side of the substrate to be processed. Vapor deposition method.   A vapor deposition apparatus comprising the vapor deposition crucible according to any one of claims 1 to 3 in a vapor deposition chamber.   The vapor deposition apparatus according to claim 6, wherein a plurality of the vapor deposition crucibles are disposed in the vapor deposition chamber at positions facing the film formation surface of the substrate to be processed. A heating device for heating the inside of the heating container;
The vapor deposition apparatus according to claim 6 or 7, wherein the heating apparatus is capable of heating the flight direction control concave curved surface to a temperature equal to or higher than an evaporation temperature of the vapor deposition material.

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