JP2008160624A - High-frequency device board, aperture plane antenna, high-frequency line - waveguide converter and high-frequency device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce a higher order mode caused by shortening an effective wavelength in response to a dielectric constant. <P>SOLUTION: There are provided a substrate 104, a line conductor 107 by which a high-frequency signal is transmitted, a slot 108 provided crossing the line conductor 107, and a plurality of via conductors 110 disposed surrounding an area R between the slot 107 in the substrate 104 and a lower face 104b of the substrate 104. The plurality of via conductors 110 comprises: a first via conductor 110-1 arranged surrounding an area R between a slot 108 in the substrate 104 and the lower face 104b of the substrate 104; and a second via conductor 110-2 provided at a central side from the first via conductor 110-1. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a high-frequency device such as an aperture antenna or a high-frequency line-waveguide converter.

In recent years, with the advent of advanced information era, high-frequency signals used for information transmission have been studied to utilize frequencies from the microwave region to the millimeter-wave region. For example, millimeter-wave high-frequency signals such as inter-vehicle radar There has also been proposed an apparatus using the.
JP 2001-177712 A

  In an apparatus using a high-frequency signal, in order to further improve the signal transmission characteristics, the effective wavelength is shortened according to the dielectric constant of the substrate 104 while reducing the influence on the TE10 which is the basic propagation mode. It is required to reduce the higher order modes (TE11, TM11, etc.) that occur.

  The high-frequency device substrate of the present invention includes a base body made of a plurality of dielectric layers and having an upper surface and a lower surface, a line conductor formed on the upper surface of the base body for transmitting a high-frequency signal, and the upper surface of the base body on the upper surface. A slot provided across the line conductor, and a plurality of via conductors disposed so as to surround a region between the slot and the lower surface of the base body, the plurality of via conductors, The substrate includes a first via conductor arranged to surround a region between the slot and the lower surface of the substrate, and a second via conductor provided closer to the center than the first via conductor. It is characterized by this.

  The present invention provides a first via conductor in which a plurality of via conductors are arranged so as to surround a region between a slot in the base and the lower surface of the base, and a second via provided on the center side of the first via conductor. By using the via conductor, the higher-order modes (TE11, TM11, etc.) generated by shortening the effective wavelength according to the dielectric constant of the substrate 104 are reduced while reducing the influence on the basic propagation mode TE10. Can be made.

  Embodiments of the present invention will be described in detail with reference to the drawings. The present invention relates to a high-frequency device such as an aperture antenna or a high-frequency-waveguide converter. FIG. 1 is a perspective view showing the configuration of the high-frequency device. The high frequency apparatus 101 includes a high frequency device substrate 102 and a semiconductor element 103 mounted on the high frequency device substrate 102. 1 includes a dielectric substrate 104, a metal substrate 105 provided on the lower surface (in FIG. 1) of the dielectric substrate 104, and a seal ring on the upper surface (in FIG. 1) of the dielectric substrate 104. 106.

  (First Embodiment) Here, a high-frequency device substrate according to a first embodiment of the present invention will be described with reference to FIGS. FIG. 2 is an exploded perspective view showing the configuration of the high-frequency device substrate according to the first embodiment of the present invention, and is an enlarged view of a portion indicated by a symbol X in the configuration of FIG. FIG. 3 is a plan view of the high-frequency device substrate shown in FIG. In FIG. 3, a portion corresponding to the perspective view is indicated by a dotted line. 4 is a cross-sectional view taken along line A-A ′ of the high-frequency device substrate shown in FIG. 3.

  The high-frequency device substrate 102 in the present embodiment includes a base body 104 having an upper surface 104a and a lower surface 104b (in the drawing), a line conductor 107 formed on the upper surface 104a of the base body 104, and a slot provided on the upper surface 104a of the base body 104. 108, a conductor layer 109 formed on the lower surface 104 b of the base body 104, and a plurality of via conductors 110.

  The substrate 104 includes a plurality of dielectric layers 104_1 and 104_2. The substrate 104 is made of a ceramic material mainly composed of aluminum oxide, aluminum nitride, silicon nitride, mullite or the like, a glass material, or a glass ceramic material obtained by firing a mixture of glass and ceramic filler, epoxy resin, polyimide resin, tetrafluoride. It is made of a dielectric material such as an organic resin material such as ethylene resin or fluorine resin, or a composite material made of organic resin material, ceramic material, or glass material.

  The line conductor 107 transmits a high frequency signal transmitted or received by the semiconductor element 103. 2 to 4, the line conductor 107 functions as a high-frequency line (coplanar line) together with the dielectric layer 104_1 and the conductor layer 111 formed on the surface of the dielectric layer 104_1. A ground potential is applied to the conductor layer 111.

  The slot 108 is provided so as to cross the line conductor 107. 2 to 4, the slot 108 is provided orthogonal to the line conductor 107 at the end of the line conductor 107. With such a configuration, the slot 108 is electromagnetically coupled to the high-frequency line including the line conductor 107.

  For example, a high-frequency signal output from the semiconductor element 103 is transmitted through a high-frequency line including the line conductor 107 and transmitted from the slot 108 toward the lower surface 104 b of the base body 104. The signal transmitted in the direction of the lower surface 104 b of the base body 104 is radiated from the opening 109 a of the conductor layer 109 formed on the lower surface 104 b of the base body 104.

  The conductor layer 109 is provided with a ground potential and has an opening 109 a facing the slot 108.

  The plurality of via conductors 110 are disposed so as to surround a region R between the slot 108 and the opening 109 a in the base body 104, and are electrically connected to the conductor layer 109. In the present embodiment, the plurality of via conductors 110 include a first via conductor 110-1 and a first via conductor 110- arranged around the region R between the slot 108 and the opening 109a in the base 104. 1 and a second via conductor 110-2 provided on the center side.

  The second via conductor 110-2 includes a first portion 110-2a located in the arrangement region r of the first via conductor 110-1, and a slot 108 and an opening 109a in the base 104 from the first portion 110-2a. And a second portion 110-2b located on the center side of the region R between the two. That is, in the configuration shown in FIGS. 2 to 4, the second via conductor 110-2 has a portion protruding inward from the arrangement of the first via conductors 110-1. The high-frequency device substrate according to the present embodiment has a high-order mode that is generated by shortening the effective wavelength according to the dielectric constant of the substrate 104 while reducing the influence on the TE10 that is the basic propagation mode. (TE11, TM11, etc.) can be reduced and the transmission characteristics of high-frequency signals can be improved.

  When the high-frequency device substrate in the present embodiment is used as a high-frequency line-waveguide converter, a waveguide 112 is provided on the lower surface 104b of the base 104 corresponding to the slot 108 as shown in FIG. In the configuration shown in FIG. 5, the waveguide 112 is bonded to the conductor layer 109 formed on the lower surface 104 b of the base body 104.

  When the high-frequency device substrate in this embodiment is used as an aperture antenna, a signal radiated from the slot 108 to the lower side (in the drawing) of the base 104 is an opening 109a of the conductor layer 109 formed on the lower surface 104b of the base 104. Is emitted from the outside.

  (Second Embodiment) A second embodiment of the present invention will be described with reference to FIGS. FIG. 6 is an exploded perspective view showing the configuration of the high-frequency device substrate according to the second embodiment of the present invention. FIG. 7 is a plan view of the high-frequency device substrate shown in FIG. FIG. 8 is a plan view showing the configuration of the conductor layer 209.

  The configuration of the present embodiment is different from the configuration of the first embodiment shown in FIGS. 2 to 4 in that the conductor layer 209 on the lower surface 104a of the base 104 is arranged with the first via conductor 110-1. The first region 209-1 and the second region 209-2 in which the second via conductor 110-2 is arranged and located inside the first region 209-1. Other configurations in the present embodiment are the same as those in the first embodiment. In the present embodiment, the same components as those in the first embodiment are denoted by the same reference numerals.

  In the present embodiment, the conductor layer 209 has a region 209-2 protruding inward corresponding to the portion 110-2b protruding inward of the second via conductor 110-2. The high-frequency device substrate of the present embodiment can improve the transmission characteristics of high-frequency signals with such a configuration.

  (Third Embodiment) A third embodiment of the present invention will be described with reference to FIGS. FIG. 9 is an exploded perspective view showing the configuration of the high-frequency device substrate according to the third embodiment of the present invention. 10 is a cross-sectional view of the high-frequency device substrate shown in FIG.

  The configuration of the present embodiment is different from the configuration of the first embodiment shown in FIGS. 2 to 4 in that the second via conductor 310-2 is arranged in the arrangement region r of the first via conductor 110-1. It is provided inside. Other configurations in the present embodiment are the same as those in the first embodiment. In the present embodiment, the same components as those in the first embodiment are denoted by the same reference numerals.

  The high-frequency device substrate according to the present embodiment has a high-order mode that is generated by shortening the effective wavelength according to the dielectric constant of the base body 104 while reducing the influence on the TE10 which is the basic propagation mode. (TE11, TM11, etc.) can be reduced and the transmission characteristics of high-frequency signals can be improved.

  (Fourth Embodiment) A fourth embodiment of the present invention will be described with reference to FIG. FIG. 11 is a plan view showing the configuration of the conductor layer 409 in the high-frequency device substrate according to the fourth embodiment of the present invention.

  The configuration of the present embodiment is different from the configuration of the third embodiment shown in FIGS. 9 and 10 in that the conductor layer 409 on the lower surface 104a of the base 104 is arranged with the first via conductor 110-1. The first region 409-1 and the second region 409-2 in which the second via conductor 310-2 is arranged and located inside the first region 409-1. Other configurations in the present embodiment are the same as those in the third embodiment. In the present embodiment, the same components as those in the third embodiment are denoted by the same reference numerals.

  In the present embodiment, the conductor layer 409 has a region 409-2 projecting inward corresponding to the second via conductor 310-2. The high-frequency device substrate of the present embodiment can improve the transmission characteristics of high-frequency signals with such a configuration.

  (Fifth Embodiment) A fifth embodiment of the present invention will be described with reference to FIGS. FIG. 12 is an exploded perspective view showing the configuration of the high-frequency device substrate according to the fifth embodiment of the present invention. FIG. 13 is a cross-sectional view of the high-frequency device substrate shown in FIG.

  The configuration of the present embodiment is different from the configuration of the first embodiment shown in FIGS. 2 to 4 in that there are a plurality of first via conductors 110-1 and second via conductors 110-2. The via conductor is provided in the inner layer 104-2 of the plurality of dielectric layers 104-1 to 104-3. Other configurations in the present embodiment are the same as those in the first embodiment. In the present embodiment, the same components as those in the first embodiment are denoted by the same reference numerals. The high-frequency device substrate of the present embodiment of the present embodiment can improve the transmission characteristics of high-frequency signals with such a configuration.

It is a perspective view which shows the structure of a high frequency device. It is a disassembled perspective view which shows the structure of the high frequency device board | substrate of the 1st Embodiment of this invention. FIG. 3 is a plan view of the high frequency device substrate shown in FIG. 2. It is sectional drawing in the A-A 'line | wire of the high frequency device board | substrate shown in FIG. It is sectional drawing which shows the structure of a high frequency line-waveguide converter. It is a disassembled perspective view which shows the structure of the high frequency device board | substrate of the 2nd Embodiment of this invention. It is a top view of the high frequency device substrate shown in FIG. 3 is a plan view showing a configuration of a conductor layer 209. FIG. It is a disassembled perspective view which shows the structure of the high frequency device board | substrate of the 3rd Embodiment of this invention. FIG. 10 is a cross-sectional view of the high-frequency device substrate shown in FIG. 9. It is a top view which shows the structure of the conductor layer 409 in the high frequency device board | substrate of the 4th Embodiment of this invention. It is a disassembled perspective view which shows the structure of the high frequency device substrate of the 5th Embodiment of this invention. It is sectional drawing of the high frequency device board | substrate shown in FIG.

Explanation of symbols

102 high-frequency device substrate 107 line conductor 108 slot 109 conductor layer 110-1 first via conductor 110-2 second via conductor

Claims (8)

A substrate comprising a plurality of dielectric layers and having an upper surface and a lower surface;
A line conductor which is formed on the upper surface of the base and transmits a high-frequency signal;
A slot provided across the line conductor on the upper surface of the substrate;
A plurality of via conductors arranged to surround a region between the slot and the lower surface of the substrate;
A plurality of via conductors arranged around a region between the slot in the base and the bottom surface of the base; and a first via conductor provided on the center side of the first via conductor. A high-frequency device substrate comprising two via conductors.   The second via conductor includes a first portion located in an arrangement region of the first via conductor, and a center of a region between the slot in the base and the lower surface of the base from the first portion. The high-frequency device substrate according to claim 1, comprising a second portion located on a side.   The high-frequency device substrate according to claim 1, wherein the second via conductor is provided inside an array region of the first via conductor. Having an opening facing the slot, further comprising a conductor layer formed on the lower surface of the substrate;
The conductor layer includes a first region in which the first via conductors are arranged and a second region in which the second via conductors are arranged and located on the inner side of the first region. The high-frequency device substrate according to claim 1.   The high-frequency device substrate according to claim 1, wherein a plurality of via conductors are provided in an inner layer of the plurality of dielectric layers. A high-frequency device substrate according to claim 1;
Having an opening facing the slot of the high-frequency device substrate, comprising a conductor layer formed on the lower surface of the base,
A high-frequency signal transmitted through the line conductor is radiated from the opening of the conductor layer. A high-frequency device substrate according to claim 1;
A waveguide provided in correspondence with the slot on the lower surface of the base in the high-frequency substrate;
A high-frequency line-waveguide converter comprising: A high-frequency device substrate according to any one of claims 1 to 5,
Electrically connected to the line conductor of the high-frequency device substrate, and a semiconductor element mounted on the high-frequency device substrate;
High frequency device with

Images