JP2008160563A

JP2008160563A - Processor of high frequency signal, attenuating device, and resonance device

Info

Publication number: JP2008160563A
Application number: JP2006348100A
Authority: JP
Inventors: Koji Takaragawa; 幸司宝川; Kunikatsu Gama; 国勝蒲
Original assignee: Tamagawa Electronics Co Ltd
Current assignee: Tamagawa Electronics Co Ltd
Priority date: 2006-12-25
Filing date: 2006-12-25
Publication date: 2008-07-10

Abstract

<P>PROBLEM TO BE SOLVED: To reduce impedance mismatching, insertion loss, or the like in a high frequency signal attenuating device, or the like. <P>SOLUTION: Signal lines 2S constituting a portion of a coplaner line 2 at end parts of input and output sides of the high frequency signal attenuating device 100 constitute center lines 2SA with central parts extended. Side lines 2SB and 2SC are formed at both outer sides of the center lines 2SA to be a coplaner structure. A resistance attenuator 4 is formed between the center lines 2SA respectively extended from the end parts of the input and output sides. MEMS switches (hereinafter, MS) 10 and 30 for connecting and disconnecting the signal lines 2S to/from the side lines 2SB and 2SC, and an MS 20 for connecting and disconnecting the side lines 2SB and 2SC to/from ground lines 2g1 and 2g2 are provided. According to a user's instruction, a control part (not shown) turns off contact parts S1 and S1 of the MS 10, turns on contact parts S3 and S3 of the MS 30 and turns on contact parts S2 and S2 of the MS 20 to make a high frequency signal pass through the resistance attenuator 4, or turns on the contact parts S1 and S1 and the contact parts S3 and S3, turns off the contact parts S2 and S2 to make the high frequency signal pass through. A coplaner line structure reduces impedance mismatching, or the like. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、ミリ波、マイクロ波を含む高周波信号の処理装置及び減衰装置並びに共振装置に関する。 The present invention relates to a processing device, an attenuation device, and a resonance device for high-frequency signals including millimeter waves and microwaves.

従来、高周波信号線路の途中に抵抗素子を配設し、またこの抵抗素子と並列にＦＥＴトランジスタを配設し、ＦＥＴトランジスタの制御によって抵抗素子を介し、或いは介することなく高周波信号を通過させる高周波信号用の減衰装置が公知である（特許文献１参照）。 Conventionally, a high-frequency signal in which a resistance element is provided in the middle of a high-frequency signal line, and an FET transistor is provided in parallel with the resistance element, and the high-frequency signal is passed through or without the resistance element by controlling the FET transistor. Is known (see Patent Document 1).

また、誘電体基板上の同一平面に信号線と、この信号線を挟み込むようにグランド線とが設けられたコプレナー線路において、信号線の長さに基いて共振させる。例えば、信号線の一端をグランド線に短絡し他端を開放してλ／４共振器として機能させ、信号線の両端をグランド線に短絡してλ／２共振器として機能させる。このとき２本の信号線ａ，ｂを誘電体基板上に並行に敷設し、これら２本の信号線ａ，ｂを挟み込むようにして誘電体基板上の同一平面にグランド線Ｃ，Ｄを設け、２本のコプレナー線路Ａ，Ｂを構成する。そしてコプレナー線Ａにおいては、信号線ａが実際に信号線として使用される一方、信号線ａが共振する周波数において信号線ｂがグランド線として使用され、コプレナー線路Ｂにおいては、信号線ｂが実際に信号線として使用される一方、信号線ｂが共振する周波数において信号線ａがグランド線として使用される。このようにして多数の共振周波数を得る複合共振器が公知である（特許文献２参照）。 Further, a coplanar line provided with a signal line and a ground line so as to sandwich the signal line on the same plane on the dielectric substrate is resonated based on the length of the signal line. For example, one end of the signal line is short-circuited to the ground line and the other end is opened to function as a λ / 4 resonator, and both ends of the signal line are short-circuited to the ground line to function as a λ / 2 resonator. At this time, two signal lines a and b are laid in parallel on the dielectric substrate, and ground lines C and D are provided on the same plane on the dielectric substrate so as to sandwich the two signal lines a and b. Two coplanar lines A and B are formed. In the coplanar line A, the signal line a is actually used as a signal line, while the signal line b is used as a ground line at a frequency at which the signal line a resonates, and in the coplanar line B, the signal line b is actually used. The signal line a is used as a ground line at a frequency at which the signal line b resonates. A composite resonator that obtains a large number of resonance frequencies in this manner is known (see Patent Document 2).

一般に高周波（マイクロ波）信号は、伝送線路を取り巻くように磁界分布を形成し且つ磁界分布に直角に電界分布を形成しながら伝送線路上を伝播する。このとき、上述の減衰装置のように非対称線路の途中に抵抗等の回路機能素子や半導体スイッチ等の非線形素子が設けられると、この個所でインピーダンス不整合や高調波歪が発生する。しかも、多段構成の減衰装置を構成するために多数の回路機能素子や非線形素子を使用する場合には、インピーダンス不整合や挿入損失は益々増大する、などの問題が生じる。また上述の複合共振器は、基本的には信号線の長さに基いて共振周波数を得ているので、任意の共振周波数を得ることは困難である。
特開平７−２４９９５４号公報特開２００３−３０４１０２号公報 In general, a high frequency (microwave) signal propagates on a transmission line while forming a magnetic field distribution so as to surround the transmission line and forming an electric field distribution perpendicular to the magnetic field distribution. At this time, when a circuit functional element such as a resistor or a non-linear element such as a semiconductor switch is provided in the middle of the asymmetrical line as in the above-described attenuation device, impedance mismatch or harmonic distortion occurs at this point. In addition, when a large number of circuit function elements and nonlinear elements are used to form a multistage attenuating device, problems such as impedance mismatching and insertion loss increase more and more. Moreover, since the above-described composite resonator basically obtains a resonance frequency based on the length of the signal line, it is difficult to obtain an arbitrary resonance frequency.
Japanese Patent Laid-Open No. 7-249954 JP 2003-304102 A

本発明は、このような実情に鑑みてなされたものであり、その第１の目的は、高周波信号の処理装置及び減衰装置並びに共振装置おいて、インピーダンス不整合を少なくすることであり、第２の目的は、挿入損失を少なくすることである。また第３の目的は、高調波歪を低減することである。 The present invention has been made in view of such circumstances, and a first object thereof is to reduce impedance mismatching in a high-frequency signal processing device, an attenuation device, and a resonance device. The purpose of is to reduce the insertion loss. A third object is to reduce harmonic distortion.

請求項１の発明は、信号線とグランド線からなるコプレナー線路に形成された高周波信号処理装置であって、信号線に接続された中心線路と、中心線路の外側に設けられた側線路と、中心線路に設けられた回路機能素子と、信号線と側線路を接続又は非接続する第１の接断手段と、側線路とグランド線を接続又は非接続する第２の接断手段と、回路機能素子を機能させるか否かに基いて、高周波信号を回路機能素子を経由して通過させるように前記第１及び第２の接断手段の接断動作を制御する手段と、を備えたことを特徴とする高周波信号処理装置である。
請求項２の発明は、請求項１記載の高周波信号処理装置において、前記回路機能素子は、減衰素子又は共振素子であることを特徴とする高周波信号処理装置である。
請求項３の発明は、請求項１又は２記載の高周波信号処理装置において、前記第1及び第２の接断手段はＭＥＭＳ素子であることを特徴とする高周波信号処理装置である。
請求項４の発明は、信号線とグランド線からなるコプレナー線路に形成された高周波信号減衰装置であって、信号線の延長上に設けられた中心線路と、中心線路の外側に設けられた側線路と、中心線路に縦列して設けられた複数の抵抗減衰器と、それぞれの抵抗減衰器のグランド端子とグランド線とを接続又は非接続する第１の接断手段と、信号線と側線路とを接続又は非接続する第２の接断手段と、それぞれの抵抗減衰器毎に当該減衰器の機能を短絡する第３の接断手段と、所定の抵抗減衰器を機能させるか否かに基いて、前記第1乃至第３の接断手段の接断動作を制御する手段と、を備えたことを特徴とする高周波信号減衰装置である。
請求項５の発明は、請求項４記載の高周波信号減衰装置において、前記第１乃至第３の接断手段はＭＥＭＳ素子であることを特徴とする高周波信号減衰装置である。
請求項６の発明は、信号線とグランド線からなるコプレナー線路に形成された高周波信号減衰装置であって、信号線の延長上に該信号線と接続可能に設けられ且つ中央部分に中空領域を有する中央線路構成部と、中空領域に縦列して設けられた複数の抵抗減衰器と、信号線と中央線路構成部とを接続又は非接続する第１の接断手段と、信号線と複数の抵抗減衰器の少なくとも一つの抵抗減衰器とを接続又は非接続する第２の接断手段と、当該抵抗減衰器のグランド端子をグランド線に接続又は非接続する第３の接断手段と、当該抵抗減衰器のスルーを接続又は非接続する第４の接断手段と、所定の抵抗減衰器を機能させるか否かに基いて、前記第1乃至第４の接断手段の接断動作を制御する手段と、を備えたことを特徴とする高周波信号減衰装置である。
請求項７の発明は、請求項６記載の高周波信号減衰装置において、前記第１乃至第４の接断手段はＭＥＭＳ素子であることを特徴とする高周波信号減衰装置である。
請求項８の発明は、信号線とグランド線からなるコプレナー線路に形成された高周波信号共振装置であって、信号線に設けられ且つ中央部分に中空領域を有する中央線路構成部と、中空領域に一端を接続し他端をグランド線に接続可能な共振器と、前記共振器の他端をグランド線に接続又は非接続する接断手段と、共振器を機能させるか否かに基いて前記接断手段の接断動作を制御する手段と、を備えたことを特徴とする高周波信号共振装置である。
請求項９の発明は、請求項８記載の高周波信号共振装置において、前記接断手段はＭＥＭＳ素子であることを特徴とする高周波信号共振装置である。 The invention of claim 1 is a high-frequency signal processing device formed on a coplanar line composed of a signal line and a ground line, a center line connected to the signal line, a side line provided outside the center line, A circuit functional element provided on the central line, a first connection / disconnection means for connecting / disconnecting the signal line and the side line, a second connection / disconnection means for connecting / disconnecting the side line and the ground line, and a circuit Means for controlling the connection / disconnection operation of the first and second connection means so as to pass a high-frequency signal through the circuit function element based on whether or not the function element functions. Is a high-frequency signal processing device.
According to a second aspect of the present invention, in the high-frequency signal processing device according to the first aspect, the circuit function element is an attenuation element or a resonance element.
According to a third aspect of the present invention, in the high-frequency signal processing device according to the first or second aspect, the first and second connecting / disconnecting means are MEMS elements.
According to a fourth aspect of the present invention, there is provided a high-frequency signal attenuating device formed on a coplanar line composed of a signal line and a ground line, a center line provided on an extension of the signal line, and a side provided outside the center line. A line, a plurality of resistance attenuators provided in tandem with the center line, a first connection / disconnection means for connecting or disconnecting a ground terminal and a ground line of each resistance attenuator, a signal line and a side line Whether to function a predetermined resistance attenuator, a second connection means for connecting or disconnecting each other, a third connection means for short-circuiting the function of the attenuator for each resistance attenuator And a means for controlling the connection / disconnection operation of the first to third connection / disconnection means.
According to a fifth aspect of the present invention, in the high-frequency signal attenuating device according to the fourth aspect, the first to third connection means are MEMS elements.
The invention of claim 6 is a high-frequency signal attenuating device formed on a coplanar line composed of a signal line and a ground line, provided on the extension of the signal line so as to be connectable to the signal line, and having a hollow region in the central portion. A central line constituent part, a plurality of resistance attenuators provided in cascade in the hollow region, a first connection / disconnection means for connecting or disconnecting the signal line and the central line constituent part, a signal line and a plurality of Second connection means for connecting or disconnecting at least one resistance attenuator of the resistance attenuator, third connection means for connecting or disconnecting the ground terminal of the resistance attenuator to the ground line, and The connection / disconnection operation of the first to fourth connection / disconnection means is controlled based on whether or not a predetermined resistance attenuator is made to function, and the fourth connection / disconnection means for connecting or disconnecting the through of the resistance attenuator. And a high-frequency signal attenuating device comprising: It is a position.
A seventh aspect of the present invention is the high frequency signal attenuating device according to the sixth aspect, wherein the first to fourth connecting / disconnecting means are MEMS elements.
The invention of claim 8 is a high-frequency signal resonance device formed on a coplanar line composed of a signal line and a ground line, the central line constituting part provided in the signal line and having a hollow area in the center part, and the hollow area A resonator that has one end connected and the other end connected to a ground line, a disconnecting means that connects or disconnects the other end of the resonator to a ground line, and the connection based on whether or not the resonator functions. And a means for controlling the connection / disconnection operation of the disconnecting means.
A ninth aspect of the present invention is the high frequency signal resonance apparatus according to the eighth aspect, wherein the connection means is a MEMS element.

本発明によれば、高周波信号の処理装置及び減衰装置並びに共振装置において、インピーダンス不整合や挿入損失を少なくすることができる。また高調波歪を少なくすることができる。 According to the present invention, impedance mismatch and insertion loss can be reduced in a high-frequency signal processing device, an attenuation device, and a resonance device. Moreover, harmonic distortion can be reduced.

はじめに、本発明の実施形態に係る高周波信号減衰装置について図面を参照して説明する。
（実施形態１）図１は、本発明の一実施形態に係る、選択可能な減衰素子が一つである高周波信号減衰装置の構成を模式的に示す平面図である。図において、本高周波信号減衰装置１００は、信号線２Ｓ及びグランド線２ｇ１，２ｇ２からなるコプレナー線路２上に形成される中央線路構成部３を有する。中央線路構成部３は、信号線２Ｓから延長される中心線路２ＳＡとその両外側に形成される側線路２ＳＢ乃至２ＳＣ、中心線路２ＳＡの中央部分に形成される抵抗減衰器４、信号線２Ｓと側線路２ＳＢ乃至２ＳＣとの接続、側線路２ＳＢ乃至２ＳＣとグランド線２ｇ１，２ｇ２との接続をオン、オフするＭＥＭＳスイッチＳ１０乃至Ｓ３０からなる。そして本高周波信号減衰装置１００は、外部コプレナー線路に接続して使用される。 First, a high-frequency signal attenuation device according to an embodiment of the present invention will be described with reference to the drawings.
(Embodiment 1) FIG. 1 is a plan view schematically showing a configuration of a high-frequency signal attenuating device having one selectable attenuating element according to an embodiment of the present invention. In the figure, the high-frequency signal attenuating device 100 has a center line constituting part 3 formed on a coplanar line 2 composed of a signal line 2S and ground lines 2g1, 2g2. The central line constituting unit 3 includes a central line 2SA extending from the signal line 2S, side lines 2SB to 2SC formed on both outer sides thereof, a resistance attenuator 4 formed on a central portion of the central line 2SA, and a signal line 2S. It includes MEMS switches S10 to S30 that turn on / off the connection between the side lines 2SB to 2SC and the connection between the side lines 2SB to 2SC and the ground lines 2g1 and 2g2. The high frequency signal attenuating device 100 is used by being connected to an external coplanar line.

コプレナー線路２は、信号線２S及び側線路２SB、２SCを2本のグランド線２ｇ１、２ｇ２が所定の間隔を有して挟み込む構造の高周波信号伝送用の線路である。これら線路２Ｓ、２SB、２SC、２ｇ１，２ｇ２は、ガラス等の基板上に、例えばＡｕ等の導体膜により形成される。これら導体膜の厚みは適宜設定されるが、例えば約２μｍ程度であり、このコプレナー線路２上では例えば10ＧＨｚ以上の高周波信号が伝送される。 The coplanar line 2 is a high-frequency signal transmission line having a structure in which the two ground lines 2g1 and 2g2 are sandwiched between the signal line 2S and the side lines 2SB and 2SC with a predetermined interval. These lines 2S, 2SB, 2SC, 2g1, and 2g2 are formed of a conductive film such as Au on a substrate such as glass. The thickness of these conductor films is set as appropriate, and is about 2 μm, for example, and a high frequency signal of, for example, 10 GHz or more is transmitted on the coplanar line 2.

高周波信号減衰装置１００の入出力側端部で、コプレナー線路２の一部を構成する信号線２Ｓは、中心部分が凸状に延長され中心線路２ＳＡを構成している。中心線路２ＳＡの両外側に所定の間隔を有して側線路２ＳＢ、２ＳＣを設ける。そして入出力側端部からそれぞれ延長された中心線路２ＳＡ間に、抵抗減衰器４をその入出力端子が中心線路２ＳＡと、グランド端子が側線路２ＳＢ，２ＳＣと繋がるように形成する。 At the input / output side end of the high-frequency signal attenuating device 100, the signal line 2S constituting a part of the coplanar line 2 has a central portion extended in a convex shape to constitute a central line 2SA. Side lines 2SB and 2SC are provided at predetermined intervals on both outer sides of the center line 2SA. A resistance attenuator 4 is formed between the center line 2SA extended from the input / output side end so that the input / output terminal is connected to the center line 2SA and the ground terminal is connected to the side lines 2SB and 2SC.

これら線路２ＳＡ、２ＳＢ、２ＳＣは、側線路２ＳＢ、２ＳＣがグランド線２ｇ１、２ｇ２に接続される場合には、中心線路２ＳＡと抵抗減衰器４を側線路２ＳＢと２ＳＣが所定の間隔を有して挟み込むコプレナー線路を構成する。 When the side lines 2SB and 2SC are connected to the ground lines 2g1 and 2g2, the lines 2SA, 2SB and 2SC are connected to the center line 2SA and the resistance attenuator 4, and the side lines 2SB and 2SC are spaced apart from each other. Construct a coplanar track to be sandwiched.

更に信号線２Ｓと側線路２ＳＢ、２ＳＣとの接続（以下、オン）、非接続（以下、オフ）を可能にするように、入出力端側にＭＥＭＳスイッチＳ１０、及びＳ３０を設ける。そしてその接触部Ｓ１，Ｓ３により、信号線２Ｓと側線路２ＳＢ、信号線２Ｓと側線路２ＳＣのオン、オフを行う。スイッチＳ１０、及びＳ３０がオンのときは側線路２ＳＢ、２ＳＣは信号線として機能する。側線路２ＳＢ、２ＳＣとグランド線２ｇ１、２ｇ２間は所定の間隔を有するコプレナー線路を構成する。このとき、スイッチＳ２０はオフとなるように制御され、抵抗減衰器４は無効となる。 Further, MEMS switches S10 and S30 are provided on the input / output end side so as to enable connection (hereinafter referred to as ON) and disconnection (hereinafter referred to as OFF) between the signal line 2S and the side lines 2SB and 2SC. Then, the signal lines 2S and the side lines 2SB, and the signal lines 2S and the side lines 2SC are turned on and off by the contact portions S1 and S3. When the switches S10 and S30 are on, the side lines 2SB and 2SC function as signal lines. A coplanar line having a predetermined interval is formed between the side lines 2SB and 2SC and the ground lines 2g1 and 2g2. At this time, the switch S20 is controlled to be turned off, and the resistance attenuator 4 is disabled.

抵抗減衰器４は、例えば窒化タンタルの蒸着により膜状のパターンとして形成する。 The resistance attenuator 4 is formed as a film pattern by vapor deposition of tantalum nitride, for example.

側線路２ＳＢ、２ＳＣは、ＭＥＭＳスイッチS２０の接触部Ｓ２，Ｓ２によりグランド線２ｇ１、２ｇ２とオン、オフされる。オンのときは側線路２ＳＢ、２ＳＣはグランド線となり、入出力端部間の抵抗減衰器４が有効となる。オフの時は側線路２ＳＢ、２ＳＣはコプレナー線路２における信号線として機能する。 The side lines 2SB and 2SC are turned on and off with the ground lines 2g1 and 2g2 by the contact portions S2 and S2 of the MEMS switch S20. When on, the side lines 2SB and 2SC become ground lines, and the resistance attenuator 4 between the input and output ends becomes effective. When off, the side lines 2SB and 2SC function as signal lines in the coplanar line 2.

更にユーザーからの指示によりＭＥＭＳスイッチＳ１０，Ｓ２０，Ｓ３０をオン、オフする動作制御装置（不図示）が設けられている。 Further, an operation control device (not shown) for turning on and off the MEMS switches S10, S20, and S30 according to an instruction from the user is provided.

続いて、ＭＥＭＳスイッチＳ１０について説明する。
図２は、ＭＥＭＳスイッチＳ１０の説明図であり、図２（ａ）は平面図、図２（ｂ）は図１のＡ−Ａ断面図である。図２（ａ）の平面図中、コプレナー線路２は図１のコプレナー線路を反時計方向に90度回転した方向で描かれている。
なお、図１と同じ構成部品には同じ参照番号を付し説明を省略する。
図において、シリコンやガラス等で形成された基板１１は、その上部にコプレナー線路２を保持し、両サイドに後述する可動体１２を保持するための固定部１３を備える。可動体１２の基板１１側の面には、その両サイドに可動体駆動用電極１４が、またＭＥＭＳスイッチの接触部Ｓ１が備えられている。可動体１２は、可動体駆動用電極１４，１４に対応する位置にスルーホール１５，１５を備え、基板１１のグランド線２ｇ１，２ｇ２に対応する位置であって、可動体駆動用電極１４に対応する位置にスルーホール１６，１６が設けられる。これらスルーホール１５，１６を通して直流電圧が可動体駆動用電極１４とグランド線２ｇ１，２ｇ２との間に印加される。 Next, the MEMS switch S10 will be described.
2A and 2B are explanatory diagrams of the MEMS switch S10. FIG. 2A is a plan view and FIG. 2B is a cross-sectional view taken along the line AA in FIG. In the plan view of FIG. 2A, the coplanar line 2 is drawn in a direction rotated 90 degrees counterclockwise from the coplanar line of FIG.
The same components as those in FIG. 1 are denoted by the same reference numerals and description thereof is omitted.
In the figure, a substrate 11 made of silicon, glass or the like is provided with a fixed portion 13 for holding a coplanar line 2 on its upper part and holding a movable body 12 to be described later on both sides. On the surface of the movable body 12 on the substrate 11 side, movable body driving electrodes 14 are provided on both sides thereof, and a contact portion S1 of the MEMS switch is provided. The movable body 12 includes through holes 15 and 15 at positions corresponding to the movable body driving electrodes 14 and 14, and is positions corresponding to the ground lines 2 g 1 and 2 g 2 of the substrate 11 and corresponds to the movable body driving electrode 14. Through holes 16 and 16 are provided at the positions to be operated. A DC voltage is applied between the movable body driving electrode 14 and the ground lines 2g1 and 2g2 through the through holes 15 and 16.

接触部Ｓ１は、図２（ｂ）に示すように、可動体駆動用電極１４とグランド線２ｇ１，２ｇ２との間に直流電圧が印加されないとき、可動体１２は変位することなくコプレナー線路２から離れた位置にあり、従って、信号線２Ｓと側線路２ＳＢ、及び信号線２Ｓと側線路２ＳＣと接触することなく、信号線２Ｓと側線路２ＳＢ、及び信号線２Ｓと側線路２ＳＣの接続をオフする。 As shown in FIG. 2B, the contact portion S1 is configured so that when the DC voltage is not applied between the movable body driving electrode 14 and the ground lines 2g1 and 2g2, the movable body 12 is not displaced from the coplanar line 2. Therefore, the connection between the signal line 2S and the side line 2SB, and the signal line 2S and the side line 2SC is turned off without contacting the signal line 2S and the side line 2SB, and the signal line 2S and the side line 2SC. To do.

いま可動体駆動用電極１４とグランド線２ｇ１，２ｇ２との間に直流電圧が印加されると、可動体駆動用電極１４とグランド線２ｇ１，２ｇ２との間に静電引力が発生する。この静電引力により図３に示すように可動体１２が変位し、可動体１２はグランド線２ｇ１，２ｇ２側に引き寄せられる。従って接触部Ｓ１は、信号線２Ｓと２ＳＢ、及び信号線２Ｓと２ＳＣとに接触し、信号線２Ｓと２ＳＢ、及び信号線２Ｓと２ＳＣの接続はオンとなる。 When a DC voltage is applied between the movable body driving electrode 14 and the ground lines 2g1 and 2g2, an electrostatic attractive force is generated between the movable body driving electrode 14 and the ground lines 2g1 and 2g2. Due to this electrostatic attraction, the movable body 12 is displaced as shown in FIG. 3, and the movable body 12 is drawn toward the ground lines 2g1, 2g2. Therefore, the contact portion S1 contacts the signal lines 2S and 2SB and the signal lines 2S and 2SC, and the connection between the signal lines 2S and 2SB and the signal lines 2S and 2SC is turned on.

更に続いて、ＭＥＭＳスイッチＳ２０について説明する。
本ＭＥＭＳスイッチＳ２０は、ＭＥＭＳスイッチＳ１０と基本的に同一構成を有している。従って、ＭＥＭＳスイッチＳ１０と同一構成部品には同一参照番号を付し説明を省略する。
図４は、ＭＥＭＳスイッチＳ２０の説明図であり、図４（ａ）は平面図、図４（ｂ）は断面図である。図において、接触部Ｓ２，Ｓ２は、可動体駆動用電極１４とグランド線２ｇ１，２ｇ２との間に直流電圧が印加されないとき、側線路２ＳＢ、２ＳＣと、グランド線２ｇ１、２ｇ２とは非接触となり、両者の接続はオフとなる。可動体駆動用電極１４とグランド線２ｇ１，２ｇ２との間に直流電圧が印加されると、可動体１２が変位し、接触部Ｓ２，Ｓ２がコプレナー線路２の上面に接触する位置に移動し、側線路２ＳＢとグランド線２ｇ１、及び線路２ＳＣとグランド線２ｇ２の間を接続する。 Subsequently, the MEMS switch S20 will be described.
This MEMS switch S20 has basically the same configuration as the MEMS switch S10. Accordingly, the same components as those of the MEMS switch S10 are denoted by the same reference numerals, and description thereof is omitted.
4A and 4B are explanatory diagrams of the MEMS switch S20. FIG. 4A is a plan view and FIG. 4B is a cross-sectional view. In the figure, the contact portions S2 and S2 are not in contact with the side lines 2SB and 2SC and the ground lines 2g1 and 2g2 when a DC voltage is not applied between the movable body driving electrode 14 and the ground lines 2g1 and 2g2. The connection between them is turned off. When a DC voltage is applied between the movable body driving electrode 14 and the ground lines 2g1 and 2g2, the movable body 12 is displaced, and the contact portions S2 and S2 move to a position where they contact the upper surface of the coplanar line 2. The side line 2SB and the ground line 2g1, and the line 2SC and the ground line 2g2 are connected.

なお、ＭＥＭＳスイッチＳ３０は、ＭＥＭＳスイッチＳ１０と同一構造のＭＥＭＳスイッチである。 The MEMS switch S30 is a MEMS switch having the same structure as the MEMS switch S10.

ＭＥＭＳスイッチＳ１０，Ｓ２０，Ｓ３０の動作制御装置（不図示）は、通常状態（高周波信号のスルー状態）では、ＭＥＭＳスイッチＳ１０，Ｓ３０へ直流電圧を印加し、ＭＥＭＳスイッチＳ２０への直流電圧の印加を停止するよう制御している。 The operation control device (not shown) of the MEMS switches S10, S20, and S30 applies a DC voltage to the MEMS switches S10 and S30 and applies a DC voltage to the MEMS switch S20 in a normal state (through state of a high-frequency signal). Controls to stop.

本高周波信号減衰装置の動作について説明する。ユーザーが高周波信号の減衰動作を指示すると、ＭＥＭＳスイッチＳ１０，Ｓ２０，Ｓ３０の動作制御装置は、ＭＥＭＳスイッチＳ１０，Ｓ３０への直流電圧の印加は停止され、ＭＥＭＳスイッチＳ２０への直流電圧の印加を開始するよう制御する。 The operation of the high frequency signal attenuating device will be described. When the user instructs the attenuation operation of the high-frequency signal, the operation control device of the MEMS switches S10, S20, and S30 stops applying the DC voltage to the MEMS switches S10 and S30 and starts applying the DC voltage to the MEMS switch S20. Control to do.

よって、ＭＥＭＳスイッチＳ１０，Ｓ３０の接触部Ｓ１及びＳ３は、可動体１２の変位により、信号線２Ｓと側線路２ＳＢ、及び２ＳＣと非接触となり、これら線路間の接続をオフする。また、ＭＥＭＳスイッチＳ２０の接触部Ｓ２は、側線路２ＳＢ、２ＳＣとグランド線２ｇ１、２ｇ２とで接触となり、側線路２ＳＢ、２ＳＣとグランド線２ｇ１、２ｇ２間の接続をオンする。この結果、抵抗減衰器４のグランド端子がグランド線に接続され、抵抗減衰器としての機能が有効になる。 Therefore, the contact portions S1 and S3 of the MEMS switches S10 and S30 are not in contact with the signal line 2S, the side lines 2SB, and 2SC due to the displacement of the movable body 12, and the connection between these lines is turned off. The contact portion S2 of the MEMS switch S20 is in contact with the side lines 2SB, 2SC and the ground lines 2g1, 2g2, and turns on the connection between the side lines 2SB, 2SC and the ground lines 2g1, 2g2. As a result, the ground terminal of the resistance attenuator 4 is connected to the ground line, and the function as a resistance attenuator becomes effective.

（実施形態２）図５は、本発明の他の実施形態に係る選択可能な減衰素子数が2の場合の高周波信号減衰装置の構成を模式的に示す平面図である。なお、図５はコプレナー線路の信号線等を一本の線により表示しているが実際には所定の幅を有する導体により形成されている。 (Embodiment 2) FIG. 5 is a plan view schematically showing the configuration of a high-frequency signal attenuating device when the number of selectable attenuating elements is 2 according to another embodiment of the present invention. FIG. 5 shows the signal line of the coplanar line as a single line, but it is actually formed by a conductor having a predetermined width.

図において、本高周波信号減衰装置２００は、信号線２Ｓ及びグランド線２ｇ１，２ｇ２からなるコプレナー線路２上に形成される中央線路構成部３１を有する。中央線路構成部３１は、信号線２Ｓから延長される中心線路２ＳＡとその両外側に形成される側線路２ＳＢ乃至２ＳＧ、中心線路２ＳＡの中央部分に縦列して形成される抵抗減衰器５及び６、信号線２Ｓと側線路２ＳＢ乃至２ＳＧとの接続、及び抵抗減衰器５及び６の短絡、並びにグランド線２ｇ１，２ｇ２との接続をオン、オフするＭＥＭＳスイッチＳ４０乃至Ｓ１１０からなる。 In the figure, the high-frequency signal attenuating device 200 has a center line constituting part 31 formed on a coplanar line 2 composed of a signal line 2S and ground lines 2g1, 2g2. The central line constituting unit 31 includes a central line 2SA extending from the signal line 2S, side lines 2SB to 2SG formed on both outer sides thereof, and resistance attenuators 5 and 6 formed in tandem in the central portion of the central line 2SA. And MEMS switches S40 to S110 for turning on / off the connection between the signal line 2S and the side lines 2SB to 2SG, the short circuit of the resistance attenuators 5 and 6, and the connection to the ground lines 2g1 and 2g2.

抵抗減衰器５，６は、実施形態１で説明した抵抗減衰器４と同一の構成である。 The resistance attenuators 5 and 6 have the same configuration as the resistance attenuator 4 described in the first embodiment.

本実施形態では、抵抗減衰器５により５ｄＢ、抵抗減衰器６により１０ｄＢの減衰量が得られるように設計されているものとする。 In the present embodiment, it is assumed that the resistance attenuator 5 and the resistance attenuator 6 are designed to obtain an attenuation of 5 dB and 10 dB, respectively.

中央線路構成部３１は、中心線路２ＳＡが、その両サイドに中心線路２ＳＡと所定の間隔を有して形成される第１の側線路２ＳＢ，２ＳＣ、第２の側線路２ＳＤ，２ＳＥ、及び第３の側線路２ＳＦ，２ＳＧによって挟み込まれるコプレナー線路形式の構造を備えている。そして第１の側線路２ＳＢ，２ＳＣは、一端が抵抗減衰器５のグランド端子に接続され、他端がＭＥＭＳスイッチＳ４０に接続され、その接触部Ｓ４，Ｓ４により信号線２Ｓとの接続がオン、オフされる。第２の側線路２ＳＤ，２ＳＥは、一端が抵抗減衰器６のグランド端子に接続され、他端がＭＥＭＳスイッチＳ５０に接続され、その接触部Ｓ５，Ｓ５により信号線２Ｓとの接続がオン、オフされる。 The central line constituting unit 31 includes a first side line 2SB, 2SC, a second side line 2SD, 2SE, and a first side line 2SA formed with a predetermined distance from the central line 2SA on both sides thereof. It has a coplanar line type structure sandwiched between three side lines 2SF and 2SG. The first side lines 2SB and 2SC have one end connected to the ground terminal of the resistance attenuator 5, the other end connected to the MEMS switch S40, and the contact portions S4 and S4 are connected to the signal line 2S. Turned off. One end of the second side lines 2SD and 2SE is connected to the ground terminal of the resistance attenuator 6, the other end is connected to the MEMS switch S50, and the connection to the signal line 2S is turned on and off by the contact portions S5 and S5. Is done.

更に第３の側線路２ＳＦ，２ＳＧは、ＭＥＭＳスイッチＳ６０の接触部Ｓ６，Ｓ６、及びＭＥＭＳスイッチＳ１１０の接触部Ｓ１１，Ｓ１１により信号線２Ｓとの接続がオン、オフされる。 Further, the third side lines 2SF and 2SG are turned on and off by the contact portions S6 and S6 of the MEMS switch S60 and the contact portions S11 and S11 of the MEMS switch S110.

ここで前記第１の側線路２ＳＢ，２ＳＣは、前記構成を備えていることにより、後述するように抵抗減衰器５を無効（スルー）にし且つ抵抗減衰器６を有効にするとき、ＭＥＭＳスイッチ４０の接触部４により信号線２Ｓに接続されるので、中央線路構成部３１のコプレナー線路としての機能を維持し、インピーダンス不整合や挿入損失を少なくすることに寄与する。第２の側線路２ＳＤ，２ＳＥについても同様である。 Here, since the first side lines 2SB and 2SC have the above-described configuration, the MEMS switch 40 is used when the resistance attenuator 5 is disabled (through) and the resistance attenuator 6 is enabled as described later. Since the contact portion 4 is connected to the signal line 2S, the function as the coplanar line of the central line constituting portion 31 is maintained, which contributes to reducing impedance mismatch and insertion loss. The same applies to the second side lines 2SD and 2SE.

抵抗減衰器５のグランド端子は、ＭＥＭＳスイッチＳ７０の接触部Ｓ７，Ｓ７によりグランド線２ｇ１，２ｇ２との接続がオン、オフされ、また抵抗減衰器６のグランド端子は、ＭＥＭＳスイッチＳ９０の接触部Ｓ９，Ｓ９によりグランド線２ｇ１，２ｇ２との接続がオン、オフされる。抵抗減衰器５、６はそれぞれＭＥＭＳスイッチＳ８０，Ｓ１００の接触部Ｓ８、Ｓ１０により短絡される。 The ground terminal of the resistance attenuator 5 is turned on and off by the contact portions S7 and S7 of the MEMS switch S70, and the ground terminal of the resistance attenuator 6 is connected to the contact portion S9 of the MEMS switch S90. , S9, the connection to the ground lines 2g1, 2g2 is turned on and off. The resistance attenuators 5 and 6 are short-circuited by the contact portions S8 and S10 of the MEMS switches S80 and S100, respectively.

続いて本高周波減衰装置で使用するＭＥＭＳスイッチについて説明する。
前述のように本高周波減衰装置にはＭＥＭＳスイッチＳ４０乃至Ｓ１１０が使用されるが、その構造は全て同じである。よって、代表例としてＭＥＭＳスイッチＳ４０について説明する。 Next, the MEMS switch used in the high frequency attenuation device will be described.
As described above, the MEMS switches S40 to S110 are used in the high-frequency attenuator, but the structures are all the same. Therefore, the MEMS switch S40 will be described as a representative example.

図６は、ＭＥＭＳスイッチＳ４０の説明図であり、図６（ａ）は平面図、図６（ｂ）は図５のＢ−Ｂ断面図である。図６（ａ）の平面図中、コプレナー線路２は図５のコプレナー線路を反時計方向に90度回転した方向で描かれている。なお、ＭＥＭＳスイッチＳ４０において図２で説明したＭＥＭＳスイッチＳ１０と同じ構成部品には同じ参照番号を付し説明は省略する。
図において、基板１１には、その中央部にコプレナー線路の信号線２Ｓから延長される中心線路２ＳＡ並びにその両サイドに側線路２ＳＢ，２ＳＣ等が形成され、これら線路の一番外側はコプレナー線路のグランド線２ｇ１，２ｇ２である。 6A and 6B are explanatory diagrams of the MEMS switch S40. FIG. 6A is a plan view, and FIG. 6B is a cross-sectional view taken along line BB in FIG. In the plan view of FIG. 6A, the coplanar line 2 is drawn in a direction rotated 90 degrees counterclockwise from the coplanar line of FIG. In the MEMS switch S40, the same components as those of the MEMS switch S10 described with reference to FIG.
In the figure, the substrate 11 is formed with a central line 2SA extending from the signal line 2S of the coplanar line at the center thereof, and side lines 2SB, 2SC and the like on both sides thereof, and the outermost side of these lines is the coplanar line. Ground lines 2g1 and 2g2.

基板１１の両サイドに固定部１３が構成され、可動体１２が支持されている。可動体１２の基板１１側の面には、その両サイドに可動体駆動用電極１４、またＭＥＭＳスイッチＳ４０の接触部Ｓ４，Ｓ４が備えられている。可動体駆動用電極１４に対応する位置にはスルーホール１５，１５が、さらに基板１１のグランド線２ｇ１，２ｇ２に対応する位置にスルーホール１６，１６が設けられ、これらスルーホール１５，１６を介して外部から例えば２０Ｖ程度の直流電圧が可動体駆動用電極１４とグランド線２ｇ１，２ｇ２との間に印加される。接触部Ｓ４，Ｓ４をオン、オフすることにより側線路２ＳＢ及び２ＳＣを信号線２Ｓと接触又は非接触とする。 Fixed portions 13 are formed on both sides of the substrate 11, and the movable body 12 is supported. On the surface of the movable body 12 on the substrate 11 side, the movable body driving electrode 14 and contact portions S4 and S4 of the MEMS switch S40 are provided on both sides. Through holes 15 and 15 are provided at positions corresponding to the movable body driving electrode 14, and through holes 16 and 16 are provided at positions corresponding to the ground lines 2 g 1 and 2 g 2 of the substrate 11, via these through holes 15 and 16. For example, a DC voltage of about 20 V is applied from the outside between the movable body driving electrode 14 and the ground lines 2g1 and 2g2. The side lines 2SB and 2SC are brought into contact or non-contact with the signal line 2S by turning on and off the contact portions S4 and S4.

接触部Ｓ４，Ｓ４は、図６（ｂ）に示すように、可動体駆動用電極１４とグランド線２ｇ１，２ｇ２との間に直流電圧が印加されないとき、可動体１２は変位することなく、従って線路２Ｓ，２ＳＢ，２ＳＣから離れ、それぞれ切れている線路２Ｓ，２ＳＢ，２ＳＣ間を接続することなく、線路２Ｓ，２ＳＢ，２ＳＣ間の導通はオフされる。 As shown in FIG. 6B, the contact portions S4 and S4 are not displaced when the DC voltage is not applied between the movable body driving electrode 14 and the ground lines 2g1 and 2g2, and therefore the movable body 12 is not displaced. The connection between the lines 2S, 2SB, and 2SC is turned off without connecting the lines 2S, 2SB, and 2SC that are disconnected from the lines 2S, 2SB, and 2SC, respectively.

可動体駆動用電極１４とグランド線２ｇ１，２ｇ２との間に直流電圧が印加されると、可動体駆動用電極１４とグランド線２ｇ１，２ｇ２間に静電引力が発生する。この静電引力により図７に示すように可動体１２は基板１１側に引き寄せられる。従って接触部Ｓ４，Ｓ４は、それぞれ切れている線路２Ｓ，２ＳＢ，２ＳＣ間を接続し、線路２Ｓ，２ＳＢ，２ＳＣ間の導通はオンされる。 When a DC voltage is applied between the movable body driving electrode 14 and the ground lines 2g1 and 2g2, an electrostatic attractive force is generated between the movable body driving electrode 14 and the ground lines 2g1 and 2g2. As shown in FIG. 7, the movable body 12 is attracted toward the substrate 11 by this electrostatic attraction. Accordingly, the contact portions S4 and S4 connect the disconnected lines 2S, 2SB, and 2SC, respectively, and the conduction between the lines 2S, 2SB, and 2SC is turned on.

ＭＥＭＳスイッチＳ４０からＳ１１０は、不図示のＭＥＭＳスイッチ動作制御装置によりそのオン、オフが制御され、その制御によって減衰器を、０ｄＢ（スルー）、５ｄＢ、１０ｄＢ及び１５ｄＢのように減衰量を変化させることができる。 The MEMS switches S40 to S110 are controlled to be turned on and off by a MEMS switch operation control device (not shown), and by the control, the amount of attenuation is changed to 0 dB (through), 5 dB, 10 dB, and 15 dB. Can do.

次に高周波減衰器における減衰量の可変動作について図５を再度参照し説明する。以下、ＭＥＭＳスイッチを単にスイッチという、またスイッチがオン、オフというときはその接触部がオン、オフすることをいう。
（１）ゼロ減衰（スルー）：ユーザーが減衰器のスルーを指示すると、ＭＥＭＳスイッチ動作制御装置は、スイッチＳ７０，９０をオフする。スイッチＳ４０，５０，６０，８０，１００，１１０をオンする。従って、入力側信号線２Ｓに伝送された高周波信号は、中心線路２ＳＡ、側線路２ＳＦ,２ＳＧを通って出力側信号線２Ｓへスルーされる。
（２）５ｄＢ減衰：ユーザーの指示によりＭＥＭＳスイッチ動作制御装置は、スイッチＳ４０，６０，８０，９０，１１０はオフ、スイッチＳ５０，７０，１００はオンする。よって、入力側信号線２Ｓに伝送された高周波信号は、中心線路２ＳＡから５ｄＢ減衰器を通過し、１０ｄＢ減衰器をスルーするので、５ｄＢの減衰量が得られる。
（３）１０ｄＢ減衰：ユーザーの指示によりＭＥＭＳスイッチ動作制御装置は、スイッチＳ５０，６０，７０，１１０はオフ、スイッチＳ４０，８０はオン、スイッチＳ１００はオフ、スイッチＳ９０はオンする。従って、入力側信号線２Ｓに伝送された高周波信号は、中心線路２ＳＡから５ｄＢ減衰器をスルーし、１０ｄＢ減衰器を通過するので、１０ｄＢの減衰量が得られる。
（４）１５ｄＢ減衰：ユーザーの指示によりＭＥＭＳスイッチ動作制御装置は、スイッチＳ４０，５０，６０，１１０はオフし、更にスイッチＳ８０，１００もオフする。またスイッチＳ７０，９０はオンする。従って、入力側信号線２Ｓに伝送された高周波信号は、中心線路２ＳＡから５ｄＢ減衰器及び１０ｄＢ減衰器を通過するので、１５ｄＢの減衰量が得られる。 Next, the variable operation of the attenuation amount in the high frequency attenuator will be described with reference to FIG. 5 again. Hereinafter, the MEMS switch is simply referred to as a switch, and when the switch is turned on or off, the contact portion is turned on or off.
(1) Zero attenuation (through): When the user instructs through the attenuator, the MEMS switch operation control device turns off the switches S70 and 90. The switches S40, 50, 60, 80, 100, 110 are turned on. Accordingly, the high frequency signal transmitted to the input side signal line 2S is passed through the center line 2SA, the side lines 2SF, 2SG to the output side signal line 2S.
(2) 5 dB attenuation: The MEMS switch operation control device turns off the switches S40, 60, 80, 90, and 110 and turns on the switches S50, 70, and 100 according to a user instruction. Therefore, the high frequency signal transmitted to the input side signal line 2S passes through the 5 dB attenuator from the center line 2SA and passes through the 10 dB attenuator, so that an attenuation amount of 5 dB is obtained.
(3) 10 dB attenuation: In accordance with a user instruction, the MEMS switch operation control device turns off the switches S50, 60, 70, 110, turns on the switches S40, 80, turns off the switch S100, and turns on the switch S90. Accordingly, the high frequency signal transmitted to the input side signal line 2S passes through the 5 dB attenuator from the center line 2SA and passes through the 10 dB attenuator, so that an attenuation of 10 dB is obtained.
(4) Attenuation of 15 dB: The MEMS switch operation control device turns off the switches S40, 50, 60, 110 and further turns off the switches S80, 100 according to a user instruction. The switches S70 and 90 are turned on. Therefore, the high frequency signal transmitted to the input side signal line 2S passes through the 5 dB attenuator and the 10 dB attenuator from the center line 2SA, so that an attenuation of 15 dB is obtained.

本実施形態に係る減衰量可変形の減衰装置は、２段構成の減衰装置となっているが、側線路、抵抗減衰器、抵抗減衰器の通過、不通過をオン、オフするＭＥＭＳスイッチ等を増設することにより３段、４段など複数段構成の減衰装置を構成することが可能である。 The variable attenuation type attenuation device according to this embodiment is a two-stage attenuation device, but includes a side line, a resistance attenuator, a MEMS switch that turns on / off the passage of the resistance attenuator, and the like. By increasing the number, it is possible to configure an attenuation device having a multi-stage configuration such as a three-stage or a four-stage.

（実施形態３）図８は、本発明の更に他の実施形態に係る選択可能な減衰素子数が２の場合の高周波信号減衰装置の構成を模式的に示す平面図である。なお、図中、図1と同じ構成部品には同じ参照番号を付し説明を省略する。 (Embodiment 3) FIG. 8 is a plan view schematically showing the configuration of a high-frequency signal attenuating apparatus when the number of selectable attenuating elements is 2 according to still another embodiment of the present invention. In the figure, the same components as those in FIG.

図において、本高周波信号減衰装置３００は、その入出力端でコプレナー線路２の信号線２Ｓを一旦終端し、その延長上に設ける中心線路を、中央部分に中空領域１８を有する中央線路構成部４１とする。中空領域１８には、導体で構成された中継パターン１９，２０，２１，２２，２３を形成し、中継パターン１９乃至２１間に減衰器７を、また中継パターン２１乃至２３間に減衰器８を形成する。そして減衰器７及び８を信号線２Ｓに接続し、或いはスルーするためにＭＥＭＳスイッチＳ１２０乃至Ｓ１８０を設ける。ＭＥＭＳスイッチＳ１２０乃至Ｓ１８０は、実施形態２で使用したＭＥＭＳスイッチと同じ形式のものが使用される。 In the figure, the high-frequency signal attenuating apparatus 300 once terminates the signal line 2S of the coplanar line 2 at its input / output end, and a central line provided on the extension of the signal line 2S. And In the hollow region 18, relay patterns 19, 20, 21, 22, and 23 made of a conductor are formed, and the attenuator 7 is provided between the relay patterns 19 to 21, and the attenuator 8 is provided between the relay patterns 21 to 23. Form. Then, MEMS switches S120 to S180 are provided to connect or pass the attenuators 7 and 8 to the signal line 2S. The MEMS switches S120 to S180 are of the same type as the MEMS switch used in the second embodiment.

信号線２Ｓと中央線路構成部４１とは、入出力端両サイドのＭＥＭＳスイッチＳ１２０の接触部Ｓ１２によりオン、オフされる。中央線路構成部４１とグランド線２ｇ１，２ｇ２とは、ＭＥＭＳスイッチＳ１３０の接触部１３によりオン、オフされる。また信号線２Ｓと中央線路構成部４１の減衰器７，８とは、ＭＥＭＳスイッチＳ１４０の接触部１４によりオン、オフされる。更に減衰器７及び又は８の選択は、ＭＥＭＳスイッチＳ１５０乃至１８０の接触部Ｓ１５，Ｓ１６，Ｓ１７，Ｓ１８のオン、オフにより行われる。 The signal line 2S and the central line constituting part 41 are turned on and off by the contact part S12 of the MEMS switch S120 on both sides of the input / output end. The central line constituting part 41 and the ground lines 2g1, 2g2 are turned on and off by the contact part 13 of the MEMS switch S130. Further, the signal line 2S and the attenuators 7 and 8 of the central line constituting part 41 are turned on and off by the contact part 14 of the MEMS switch S140. Further, the selection of the attenuators 7 and 8 is performed by turning on and off the contact portions S15, S16, S17, and S18 of the MEMS switches S150 to S180.

本実施形態では、減衰器７により例えば１ｄＢ、減衰器８により例えば２ｄＢの減衰量が得られるように設計されているものとする。 In the present embodiment, it is assumed that the attenuator 7 is designed to obtain an attenuation amount of, for example, 1 dB, and the attenuator 8 is, for example, 2 dB.

次に高周波減衰器における減衰量の可変動作について図８を参照し説明する。以下、ＭＥＭＳスイッチを単にスイッチという、またスイッチがオン、オフというときはその接触部がオン、オフすることをいう。
（１）ゼロ減衰（スルー）：ユーザーが減衰器のスルーを指示すると、ＭＥＭＳスイッチの動作制御装置は、スイッチＳ１２０をオン、スイッチＳ１３０、スイッチＳ１４０をオフする。従って、入力側信号線２Ｓに伝送された高周波信号は、中央線路構成部４１を通って出力側信号線２Ｓへスルーされる。
（２）１ｄＢ減衰：ユーザーの指示によりＭＥＭＳスイッチ動作制御装置は、スイッチＳ１２０オフ、スイッチＳ１３０はオン、スイッチＳ１４０はオン、スイッチＳ１５０はオフ、スイッチＳ１６０はオン、スイッチＳ１７０はオン、スイッチＳ１８０はオフする。よって、入力側信号線２Ｓに伝送された高周波信号は、中継パターン１９、減衰器７、中継パターン２１，２２，２３を通過、つまり減衰器８をスルーするので、１ｄＢの減衰量が得られる。
（３）２ｄＢ減衰：ユーザーの指示によりＭＥＭＳスイッチ動作制御装置は、スイッチＳ１２０はオフ、スイッチＳ１３０はオン、スイッチＳ１４０はオン、スイッチＳ１５０はオン、スイッチＳ１６０はオフ、スイッチＳ１７０はオフ、スイッチＳ１８０はオンする。よって、入力側信号線２Ｓに伝送された高周波信号は、減衰器７をスルーし、２ｄＢ減衰器８を通過するので、２ｄＢの減衰量が得られる。
（４）３ｄＢ減衰：ユーザーの指示によりＭＥＭＳスイッチ動作制御装置は、スイッチＳ１２０はオフ、スイッチＳ１３０はオン、スイッチＳ１４０はオン、スイッチＳ１５０はオフ、スイッチＳ１６０はオン、スイッチＳ１７０はオフ、スイッチＳ１８０はオンする。よって、入力側信号線２Ｓに伝送された高周波信号は、中継パターン１９、減衰器７、中継パターン２１，減衰器８、中継パターン２３を通過するので、３ｄＢの減衰量が得られる。 Next, the variable operation of the attenuation amount in the high frequency attenuator will be described with reference to FIG. Hereinafter, the MEMS switch is simply referred to as a switch, and when the switch is turned on or off, the contact portion is turned on or off.
(1) Zero attenuation (through): When the user instructs through the attenuator, the MEMS switch operation control device turns on the switch S120 and turns off the switch S130 and the switch S140. Accordingly, the high-frequency signal transmitted to the input side signal line 2S is passed through the central line constituting unit 41 to the output side signal line 2S.
(2) 1 dB attenuation: MEMS switch operation control device is switched off by switch S120, switch S130 is on, switch S140 is on, switch S150 is off, switch S160 is on, switch S170 is on, and switch S180 is off according to user instructions To do. Therefore, the high-frequency signal transmitted to the input-side signal line 2S passes through the relay pattern 19, the attenuator 7, and the relay patterns 21, 22, and 23, that is, passes through the attenuator 8. Therefore, an attenuation amount of 1 dB is obtained.
(3) 2 dB attenuation: At the user's instruction, the MEMS switch operation control device switches off switch S120, switches on S130, switches on S140, switches on S150, switches off on S160, switches off on S170, switches off on S180 Turn on. Therefore, the high-frequency signal transmitted to the input-side signal line 2S passes through the attenuator 7 and passes through the 2 dB attenuator 8, so that an attenuation amount of 2 dB is obtained.
(4) Attenuation of 3 dB: According to a user instruction, the MEMS switch operation control device switches off S120, switches on S130, switches S140 on, switches S150 off, switches S160 on, switches S170 off, and switches S180 Turn on. Therefore, the high-frequency signal transmitted to the input side signal line 2S passes through the relay pattern 19, the attenuator 7, the relay pattern 21, the attenuator 8, and the relay pattern 23, so that an attenuation of 3 dB is obtained.

本実施形態に係る減衰装置は、２段構成の減衰装置となっているが、中央線路構成部４１の中空領域１８内に形成される減衰器及び、その通過、不通過をオン、オフするＭＥＭＳスイッチを増設することにより３段、４段など複数段構成の減衰装置を構成することが可能である。 The attenuator according to the present embodiment is a two-stage attenuator, but the attenuator formed in the hollow region 18 of the center line constituent part 41 and the MEMS that turns on and off the pass and non-pass. By adding switches, it is possible to configure a three-stage, four-stage, etc. multi-stage attenuation device.

（実施形態４）次に、本発明の更に他の実施形態に係る高周波信号共振装置について図面を参照して説明する。
図９は、本発明の実施形態に係る高周波信号共振装置の構成を模式的に示す平面図であり、図中、図１の構成部品と同じ構成部品には同じ参照番号を付し説明を省略する。図において、高周波信号共振装置４００は、ガラス基板上に例えば銅のエッチングにより形成された信号線２Ｓ及びグランド線２ｇ１及び２ｇ２からなるコプレナー線路２を有する。そして信号線２Ｓを中央部分に中空領域９を有する中央線路構成部５１とする。この中空領域９中に、フォトエッチングにより厚さ例えば２μｍ程度の一端を入力側信号線２Ｓに接続し他端をオープンにするインダクタンス領域Ｌ及びキャパシタンス領域Ｃからなる共振器１０を形成する。共振器１０のオープン側は、ＭＥＭＳスイッチＳ１９０の接触部Ｓ１９，Ｓ１９によりグランド線２ｇ１、２ｇ２と接続がオン、オフできるようになっている。 (Embodiment 4) Next, a high-frequency signal resonance apparatus according to still another embodiment of the present invention will be described with reference to the drawings.
FIG. 9 is a plan view schematically showing the configuration of the high-frequency signal resonance device according to the embodiment of the present invention. In FIG. 9, the same components as those in FIG. To do. In the figure, a high-frequency signal resonance apparatus 400 has a coplanar line 2 composed of a signal line 2S and ground lines 2g1 and 2g2 formed on a glass substrate by etching of copper, for example. And let the signal line 2S be the center line structure part 51 which has the hollow area | region 9 in the center part. In this hollow region 9, a resonator 10 including an inductance region L and a capacitance region C in which one end having a thickness of about 2 μm, for example, is connected to the input-side signal line 2S and the other end is opened is formed by photoetching. The open side of the resonator 10 can be turned on and off with respect to the ground lines 2g1 and 2g2 by contact portions S19 and S19 of the MEMS switch S190.

ＭＥＭＳスイッチ１９０は、図６に示した形式のスイッチを使用することができる。そしてＭＥＭＳスイッチＳ１９０は、共振器１０としての動作が指示されない定常状態では接触部Ｓ１９,Ｓ１９をオフしている。このため高周波信号は、中空領域９内の共振器１０が無効となっている信号線２Ｓをスルーする。ユーザーにより共振器１０の動作が指示されると、ＭＥＭＳスイッチの動作制御装置（不図示）は、ＭＥＭＳスイッチＳ１９０の接触部Ｓ１９,Ｓ１９をオンし、共振器１０の他端部をグランド線２ｇ１，２ｇ２に接続することにより共振器１０を有効にする。 As the MEMS switch 190, a switch of the type shown in FIG. 6 can be used. The MEMS switch S190 turns off the contact portions S19 and S19 in a steady state where the operation as the resonator 10 is not instructed. For this reason, the high frequency signal passes through the signal line 2S in which the resonator 10 in the hollow region 9 is disabled. When the operation of the resonator 10 is instructed by the user, the MEMS switch operation control device (not shown) turns on the contact portions S19 and S19 of the MEMS switch S190, and connects the other end of the resonator 10 to the ground line 2g1, Resonator 10 is enabled by connecting to 2g2.

本実施形態によれば、単純な構成で周波数可変形共振器、もしくは周波数可変形フィルタを構成することができ、且つインピーダンス不整合が少なくなり、アイソレーションもよくなる。 According to this embodiment, a frequency variable resonator or a frequency variable filter can be configured with a simple configuration, impedance mismatching is reduced, and isolation is improved.

本実施形態では、共振器１０は一つのみ設けているが、信号線２Ｓ中に中空領域９を縦列して複数設け、そこにそれぞれ共振周波数の異なる共振器を形成する。そしてＭＥＭＳスイッチの動作制御装置によって、いずれかの共振器を選択使用するようにして周波数可変形共振器、もしくは周波数可変形フィルタを構成することができる。 In the present embodiment, only one resonator 10 is provided, but a plurality of hollow regions 9 are provided in tandem in the signal line 2S, and resonators having different resonance frequencies are formed therein. Then, a frequency variable type resonator or a frequency variable type filter can be configured so that any one of the resonators is selectively used by the operation control device of the MEMS switch.

本発明の実施形態に係る高周波信号減衰装置の構成を模式的に示す平面図である。It is a top view which shows typically the structure of the high frequency signal attenuation | damping apparatus which concerns on embodiment of this invention. ＭＥＭＳスイッチの説明図である。It is explanatory drawing of a MEMS switch. ＭＥＭＳスイッチの説明図である。It is explanatory drawing of a MEMS switch. ＭＥＭＳスイッチの説明図である。It is explanatory drawing of a MEMS switch. 本発明の実施形態に係る高周波信号減衰装置の構成を模式的に示す平面図である。It is a top view which shows typically the structure of the high frequency signal attenuation | damping apparatus which concerns on embodiment of this invention. ＭＥＭＳスイッチの説明図である。It is explanatory drawing of a MEMS switch. ＭＥＭＳスイッチの説明図である。It is explanatory drawing of a MEMS switch. 本発明の実施形態に係る高周波信号減衰装置の構成を模式的に示す平面図である。It is a top view which shows typically the structure of the high frequency signal attenuation | damping apparatus which concerns on embodiment of this invention. 本発明の実施形態に係る高周波信共振装置の構成を模式的に示す平面図である。It is a top view which shows typically the structure of the high frequency signal resonance apparatus which concerns on embodiment of this invention.

Explanation of symbols

１００・・高周波信号減衰装置、２・・コプレナー線路、３・・中央線路構成部、４・・抵抗減衰器、Ｓ１０・・ＭＥＭＳスイッチ、Ｓ２０・・ＭＥＭＳスイッチ、２Ｓ・・信号線、２ｇ１・・グランド線、２ｇ２・・グランド線、２ＳＡ・・中心線路、２ＳＢ・・側線路、２ＳＣ・・側線路。 100..High-frequency signal attenuating device, 2..Coplanar line, 3..Central line constituent part, 4..resistance attenuator, S10..MEMS switch, S20..MEMS switch, 2S..signal line, 2g1 .. Ground line, 2g2, .. ground line, 2SA, .. center line, 2SB, .. side line, 2SC, .. side line.

Claims

A high-frequency signal processing device formed on a coplanar line composed of a signal line and a ground line,
A central line connected to the signal line;
A side track provided outside the center track,
A circuit functional element provided on the central line;
First connection / disconnection means for connecting or disconnecting the signal line and the side line;
A second connection / disconnection means for connecting or disconnecting the side line and the ground line;
Means for controlling the connection / disconnection operation of the first and second connection means to pass a high-frequency signal through the circuit function element based on whether or not the circuit function element functions;
A high-frequency signal processing device comprising:

The high frequency signal processing device according to claim 1,
The high frequency signal processing apparatus, wherein the circuit function element is an attenuation element or a resonance element.

In the high frequency signal processing device according to claim 1 or 2,
The high-frequency signal processing apparatus, wherein the first and second connection / disconnection means are MEMS elements.

A high-frequency signal attenuating device formed on a coplanar line composed of a signal line and a ground line,
A central line provided on the extension of the signal line;
A side track provided outside the center track,
A plurality of resistance attenuators arranged in tandem with the central line;
First connection / disconnection means for connecting or disconnecting the ground terminal and the ground wire of each resistance attenuator;
A second connection / disconnection means for connecting or disconnecting the signal line and the side line;
Third connection means for short-circuiting the function of the attenuator for each resistance attenuator;
Means for controlling the connection / disconnection operation of the first to third connection means based on whether or not a predetermined resistance attenuator functions;
A high-frequency signal attenuating device comprising:

In the high frequency signal attenuation device according to claim 4,
The high-frequency signal attenuating apparatus according to claim 1, wherein the first to third connection / disconnection means are MEMS elements.

A high-frequency signal attenuating device formed on a coplanar line composed of a signal line and a ground line,
A central line constituent part provided on the extension of the signal line so as to be connectable to the signal line and having a hollow region in the central part;
A plurality of resistance attenuators provided in tandem in the hollow region;
A first connection / disconnection means for connecting or disconnecting the signal line and the central line constituent part;
Second connection / disconnection means for connecting or disconnecting the signal line and at least one resistance attenuator of the plurality of resistance attenuators;
Third connection / disconnection means for connecting or disconnecting the ground terminal of the resistance attenuator to the ground line;
A fourth connection / disconnection means for connecting or disconnecting the through of the resistance attenuator;
Means for controlling the connection / disconnection operation of the first to fourth connection / disconnection means based on whether or not a predetermined resistance attenuator functions.
A high-frequency signal attenuating device comprising:

The high-frequency signal attenuating device according to claim 6,
The high-frequency signal attenuating apparatus according to claim 1, wherein the first to fourth connecting / disconnecting means are MEMS elements.

A high-frequency signal resonance device formed on a coplanar line composed of a signal line and a ground line,
A central line component provided in the signal line and having a hollow region in the central portion;
A resonator capable of connecting one end to a hollow region and connecting the other end to a ground wire;
Connection / disconnection means for connecting or disconnecting the other end of the resonator to a ground line;
Means for controlling the connection / disconnection operation of the connection / disconnection means based on whether or not the resonator functions.
A high-frequency signal resonance apparatus comprising:

The high frequency signal resonance device according to claim 8,
The high-frequency signal resonance apparatus according to claim 1, wherein the connection means is a MEMS element.