JP2004048176A - High frequency switch, single pole double-throw switch, and multipole multi-throw switch - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To obtain a low-loss and high-isolation high frequency switch. <P>SOLUTION: The switch comprises a board 1 with a cavity 11, first elements 6a, 6b and a ground conductor 3 formed on the cavity surface, a dielectric support layer 7 formed through a cavity space, and second electrodes 8a, 8b and a signal line 9 formed on the support layer 7 surface. In response to a control signal applied to the first electrodes 6a, 6b, the support layer 7 is displaced by an electrostatic force exerted between the first electrodes 6a, 6b and the second electrodes 8a, 8b to make a contact or noncontact state between the ground conductor 3 and the signal line 9, thereby changing the switch to an off-or on-state. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a high-frequency switch, a single-pole double-throw switch, and a multi-pole, multi-throw switch used in a high-frequency circuit.
[0002]
[Prior art]
FIG. 13 shows, for example, THE IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, FEB. 15. A perspective view showing the conventional high-frequency switch shown in 15.2001, in which 101 is a substrate, 102a and 102b are ground planes, 103a and 103b are signal lines, 104a and 104b are anchors, 105 is a metal bridge, 106 is a line, and 107 is a dielectric film. The signal lines 103a and 103b are connected via the anchors 104a and 104b and the metal bridge 105. The ground plane 102a and the ground plane 102b are connected by the line 106. The metal bridge 105 and the dielectric film 107 are spatially separated. The anchors 104a and 104b are made of a conductive material. A coplanar line is formed by the signal lines 103a and 103b and the ground planes 102a and 102b located on both sides thereof.
[0003]
FIG. 14 is a circuit diagram showing a conventional high-frequency switch. In the figure, reference numerals 108a and 108b denote transmission lines corresponding to the signal lines 103a and 103b, 109 denotes a variable capacitor whose capacitance changes according to the operation state of the switch, 110 denotes an inductor, 111 is a resistor.
[0004]
Next, the operation will be described.
When no voltage is applied to the signal lines 103a and 103b, the high-frequency signal input to the signal line 103a is transmitted to the signal line 103b via the anchors 104a and 104b and the metal bridge 105. At that time, since the metal bridge 105 is spatially separated from the dielectric film 107, the variable capacitor 109 has a very small capacitance and can be regarded as almost open. At this time, the switch is on.
[0005]
When a voltage is applied to the signal lines 103a and 103b, for example, when a positive voltage is applied, a positive charge is generated on the surface of the metal bridge 105, and a negative charge appears on the upper surface of the line 106 due to electrostatic induction. The metal bridge 105 is drawn toward the line 106 by the attraction between the two. At this time, the metal bridge 105 contacts the dielectric film 107 and is connected to the ground planes 102a and 102b via the line 106 at high frequency. The high-frequency signal input to the signal line 103a flows to the ground planes 102a and 102b via the variable capacitor 109 provided by the dielectric film 107 and the inductor 110 and the resistor 111 provided by the line 106, so that the signal is transmitted to the signal line 103b. do not do. At this time, the switch is off.
[0006]
[Problems to be solved by the invention]
Since the conventional high-frequency switch is configured as described above and is formed on the substrate 101, there is a problem that the loss increases depending on the resistivity of the substrate 101. In addition, there is a possibility that an inconsistency may occur due to the anchors 104a and 104b, resulting in a problem such as an increase in loss.
[0007]
SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems, and has a low-loss and high-isolation high-frequency switch, a single-pole double-throw switch, and a multi-pole multi-throw switch in a microwave band or a millimeter wave band. The purpose is to obtain.
[0008]
[Means for Solving the Problems]
A high-frequency switch according to the present invention includes a substrate having a cavity, a first electrode and a ground conductor formed on the cavity surface, a support layer formed via the cavity space, and a second layer formed on the support layer surface. And a high-frequency signal transmission line, the support layer is displaced by an electrostatic force acting between the first electrode and the second electrode in response to a control signal given to the first electrode, and the ground conductor and the high-frequency signal are transmitted. The signal transmission lines are brought into a contact state or a non-contact state by direct contact between metals, and a switch is switched between an off state and an on state.
[0009]
A high-frequency switch according to the present invention includes a substrate having a cavity, a first electrode and a ground conductor formed on the cavity surface, a support layer formed via the cavity space, and a second layer formed on the support layer surface. And a high-frequency signal transmission line, the support layer is displaced by an electrostatic force acting between the first electrode and the second electrode in response to a control signal given to the first electrode, and the ground conductor and the high-frequency signal are transmitted. A signal transmission line is brought into a contact state or a non-contact state via a capacitor, and a switch is switched between an off state and an on state depending on the strength of electrical coupling.
[0010]
A high-frequency switch according to the present invention includes a substrate having a cavity, a second electrode and a high-frequency signal transmission line formed on the cavity surface, a support layer formed via the cavity space, and a support layer formed on the support layer surface. A high-frequency signal transmission line, comprising a first electrode and a ground conductor, wherein the support layer is displaced by an electrostatic force acting between the second electrode and the first electrode according to a control signal given to the first electrode; And the ground conductor is brought into a contact state or a non-contact state by direct contact between metals to switch the switch between an off state and an on state.
[0011]
A high-frequency switch according to the present invention includes a substrate having a cavity, a second electrode and a high-frequency signal transmission line formed on the cavity surface, a support layer formed via the cavity space, and a support layer formed on the support layer surface. A high-frequency signal transmission line, comprising a first electrode and a ground conductor, wherein the support layer is displaced by an electrostatic force acting between the second electrode and the first electrode according to a control signal given to the first electrode; And the ground conductor is brought into a contact state or a non-contact state via a capacitor, and the switch is switched to an off state or an on state depending on the strength of electrical coupling.
[0012]
The high-frequency switch according to the present invention is such that a part of the support layer is made thin.
[0013]
The high frequency switch according to the present invention is provided with a through-hole penetrating the second electrode and the support layer.
[0014]
A high-frequency switch according to the present invention includes: a cover substrate disposed so that a substrate and a cavity face each other; a third electrode and a shield conductor formed on a cavity surface of the cover substrate; At the time of restoration from the contact state between the high-frequency signal transmission lines, the support layer is restored in a restoring direction by an attractive force caused by an electrostatic force acting between the third electrode and the second electrode in accordance with a control signal given to the third electrode. Is displaced.
[0015]
In the high-frequency switch according to the present invention, the second electrode is formed on a surface of the support layer facing the first electrode.
[0016]
A single-pole double-throw switch according to the present invention is configured by combining any one of the high-frequency switches according to the first to eighth aspects.
[0017]
A multi-pole, multi-throw switch according to the present invention is configured by combining any one of the high-frequency switches according to the first to eighth aspects.
[0018]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, an embodiment of the present invention will be described.
Embodiment 1 FIG.
FIG. 1 is a perspective view showing a high-frequency switch according to Embodiment 1 of the present invention, FIG. 2 is a plan view, FIG. 3 is a view along arrow AA ', and FIG. 4 is a view along arrow BB'. 1 is a substrate, 2 is a dielectric layer, 3 is a ground conductor, 4a and 4b are control terminals, 5a and 5b are control signal lines, 6a and 6b are first electrodes, and 7 is a dielectric support layer (support layer). , 8a and 8b are second electrodes, 9 is a signal line (high-frequency signal transmission path), 10 is a contact portion, and 11 is a cavity.
In the high-frequency switch, a cavity 11 is formed by etching the substrate 1 from the upper surface. A dielectric layer 2 is formed on a substrate 1, and a ground conductor 3, control terminals 4a and 4b, control signal lines 5a and 5b, and first electrodes 6a and 6b are formed on the dielectric layer 2 in the same plane. The substrate 1 and the first electrodes 6a and 6b are separated by a dielectric layer 2 in a DC manner. The dielectric support layer 7 is formed hollow by being supported by the end of the ground conductor 3, and the second electrodes 8 a and 8 b and the signal lines 9 are formed on the dielectric support layer 7. . The contact portion 10 is made of the same conductive material as the signal line 9 and extends from the signal line 9 through the dielectric support layer 7 to the lower surface.
The ground conductor 3, the second electrodes 8a and 8b, the signal line 9, and the contact portion 10 constitute a grounded coplanar line. The second electrodes 8a and 8b also serve as side grounds for the signal lines 9.
The ground conductor 3 and the second electrodes 8a and 8b are connected via a contact hole (not shown) and are kept at the same potential.
[0019]
Next, the operation will be described.
When no voltage is applied to the control terminals 4a and 4b, the high-frequency signal input to the signal line 9 transmits through the grounded coplanar line. Since the space between the ground conductor 3 and the signal line 9 is vacuum (relative permittivity 1), the dielectric loss is very small. At this time, the switch is on.
[0020]
When a voltage is applied to the control terminals 4a, 4b, for example, when a positive voltage is applied, a positive charge is generated on the surfaces of the first electrodes 6a, 6b, and the second electrodes 8a, 8b are generated by electrostatic induction. A negative charge appears on the lower surface of the first electrode, and the second electrodes 8a and 8b are attracted to the first electrodes 6a and 6b by the attraction between them. At this time, the signal line 9 formed on the dielectric support layer 7 is simultaneously drawn toward the first electrodes 6a and 6b, and the contact portion 10 contacts the ground conductor 3. Since the high frequency signal is connected to the ground, the high frequency signal input to the signal line 9 flows to the ground conductor 3 and does not transmit the signal. At this time, the switch is off.
As described above, the high-frequency switch switches the relationship between the signal line 9 and the ground conductor 3 to a contact state or a non-contact state depending on whether or not a voltage is applied to the control terminals 4a and 4b. That is, the switch is turned on and off.
[0021]
As described above, according to the first embodiment, since a part of the signal line 9 formed on the hollow is driven by the electrostatic force, the conventional structure in which the switch structure is formed on the substrate 1 is used. The loss is lower than that of the prior art.
Further, since there is no portion corresponding to the anchor of the related art, loss due to structural mismatch can be avoided.
Furthermore, since the signal line 9 can be manufactured by the same process regardless of whether it is on the hollow or on the substrate 1, it is excellent in matching.
[0022]
In the high frequency switch of the first embodiment, the grounded coplanar line is used, but any structure such as a microstrip line may be used as long as the structure has a similar function.
In addition, the first electrode 6a, 6b and the second electrode 8a, 8b are omitted, a voltage is applied to the signal line 9, and the signal line 9 is moved to the ground conductor 3 by an attractive force acting between the ground wire 3 and the ground wire 3. It is good also as a structure to draw.
[0023]
Embodiment 2 FIG.
FIG. 5 is a view taken in the direction of arrows AA 'showing a high-frequency switch according to Embodiment 2 of the present invention. In the figure, 7a is a dielectric support layer (support layer), and 9a is a signal line (high-frequency signal transmission line). There is a feature that the contact portion 10 is not provided as compared with FIG. 3 of the first embodiment.
[0024]
Next, the operation will be described.
5, the operation is almost the same as the configuration shown in FIG. 3, but the signal line 9a and the ground conductor 3 come into contact via the dielectric support layer 7a.
The dielectric support layer 7a at the time of contact between the signal line 9a and the ground conductor 3 can be regarded as a capacitance. In the high-frequency switch according to the second embodiment, the switch is turned off or on depending on the strength of electrical coupling. Can be switched.
[0025]
As described above, according to the second embodiment, the same effects as those of the first embodiment can be obtained, the contact portion 10 is omitted, and the signal line 9a and the ground conductor 3 are connected via the dielectric support layer 7a. Because of the contact structure, the durability of the contact portion can be improved.
[0026]
Embodiment 3 FIG.
FIG. 6 is an AA 'view showing a high-frequency switch according to Embodiment 3 of the present invention. In the figure, 23 is a ground conductor, 26a and 26b are first electrodes, and 28a and 28b are second electrodes. , 29 are signal lines (high-frequency signal transmission paths). Compared to FIG. 3 of the first embodiment, the ground conductor 23 and the first electrodes 26a and 26b are provided on the dielectric support layer 7, and the signal line 29 and the second electrodes 28a and 28b are It is characterized by being provided on the body layer 2.
[0027]
Next, the operation will be described.
In FIG. 6, when a voltage is applied to the first electrodes 26a, 26b, for example, when a positive voltage is applied, a positive charge is generated on the surfaces of the first electrodes 26a, 26b, and the electrostatic charge is induced by electrostatic induction. Negative charges appear on the lower surfaces of the second electrodes 28a and 28b, and the first electrodes 26a and 26b are attracted to the second electrodes 28a and 28b by the attraction between them. At this time, the ground conductor 23 formed on the dielectric support layer 7 is simultaneously drawn toward the second electrodes 28a and 28b, and the contact portion 10 contacts the signal line 29. Since the high frequency signal is connected to the ground, the high frequency signal input to the signal line 29 flows to the ground conductor 23 and does not transmit the signal. At this time, the switch is off.
As described above, the high-frequency switch switches the relationship between the ground conductor 23 and the signal line 29 to a contact state or a non-contact state depending on whether or not a voltage is applied to the first electrodes 26a and 26b. That is, the switch is turned on and off.
[0028]
6, the ground conductor 23 and the first electrodes 26a and 26b are provided on the dielectric support layer 7 and the signal line 29 and the second electrodes 28a and 28b are Although the structure provided on the body layer 2 is shown, as shown in FIG. 7, the contact portion 10 may be omitted and the ground conductor 23a and the signal line 29 may be in contact with each other via the dielectric support layer 7a. The durability of the contact portion can be improved.
[0029]
As described above, according to the third embodiment, the same effect as that of the first embodiment can be obtained in the configuration shown in FIG. 6, and the contact portion 10 is omitted in the configuration shown in FIG. And the signal line 29 are contacted via the dielectric support layer 7a, so that the durability of the contact portion can be improved.
[0030]
Embodiment 4 FIG.
FIG. 8 is a plan view showing a high-frequency switch according to Embodiment 4 of the present invention, in which a part of dielectric support layer 7 and second electrodes 8a and 8b is thinned. In addition, components that are the same as or correspond to those in FIG. 2 are denoted by the same reference numerals, and redundant description is omitted.
[0031]
Next, the operation will be described.
In the dielectric support layer 7 and the second electrodes 8a and 8b, the spring constant is reduced by narrowing the shape at both ends of the location where charges are generated by electrostatic induction. The magnitude of the voltage required to pull the second electrodes 8a, 8b toward the first electrodes 6a, 6b is generally proportional to the square root of the spring constant, so that the drive voltage can be reduced.
In the fourth embodiment, an example in which the present invention is applied to the configuration shown in the first embodiment has been described. However, the fourth embodiment may be applied to the configurations shown in the second and third embodiments, and similar effects can be obtained. it can.
[0032]
As described above, according to the fourth embodiment, the same effect as that of the first embodiment can be obtained, and the magnitude of the voltage required to draw dielectric support layer 7 toward first electrodes 6a and 6b is obtained. Can be reduced.
[0033]
Embodiment 5 FIG.
FIG. 9 is a plan view showing a high-frequency switch according to Embodiment 5 of the present invention, in which 12a to 12f are holes (through holes). The holes 12a to 12f penetrate the dielectric support layer 7 and the second electrodes 8a and 8b. In addition, components that are the same as or correspond to those in FIG. 2 are denoted by the same reference numerals, and redundant description is omitted.
[0034]
Next, the operation will be described.
By providing the holes 12a to 12f, the damping effect can be reduced. That is, by providing an air passage on the first electrode 6a, 6b side of the dielectric support layer 7, the displacement speed of the dielectric support layer 7 can be increased. Further, during the manufacturing process of the high-frequency switch shown in FIG. 9, for example, the resist may be used as an etching hole for removing the resist on the first electrode 6a, 6b side of the dielectric support layer 7 to make it easier to remove the resist. it can.
In the fifth embodiment, an example in which the present invention is applied to the configuration shown in the first embodiment has been described. However, the fifth embodiment may be applied to the configurations shown in the second and third embodiments, and the same effects can be obtained. it can.
[0035]
As described above, according to the fifth embodiment, the same effects as those of the first to third embodiments can be obtained, and the speed at which the dielectric support layer 7 and the second electrodes 8a and 8b are displaced is reduced. Can be faster.
[0036]
Embodiment 6 FIG.
FIG. 10 is a cross-sectional view showing a high-frequency switch according to Embodiment 6 of the present invention. In the figure, reference numeral 13 denotes a lid substrate arranged so that the substrate 1 and the cavity face each other, 14a and 14b denote third electrodes, Reference numeral 15 denotes a shield conductor, and reference numeral 16 denotes a second dielectric layer. The lid substrate 13 has a cavity like the substrate 1. The second dielectric layer 16 is formed on the cover substrate 13, and the third electrodes 14 a and 14 b and the shield conductor 15 are formed on the second dielectric layer 16. The lid substrate 13 and the third electrodes 14a and 14b are separated by a second dielectric layer 16 in a DC manner.
In addition, components that are the same as or correspond to those in FIG. 3 are denoted by the same reference numerals, and redundant description is omitted.
[0037]
Next, the operation will be described.
By providing the cover substrate 13 including the third electrodes 14a and 14b and the shield conductor 15, the loss can be reduced. That is, radiation loss can be eliminated by confining the electromagnetic field in the space formed by the substrate 1 and the lid substrate 13.
When the voltage applied to the control terminals 4a and 4b is removed when the dielectric support layer 7 is displaced toward the first electrodes 6a and 6b, that is, when the switch is off, the restoring force causes The dielectric support layer 7 returns to its original position. At the same time, when a voltage is applied to the third electrodes 14a, 14b, for example, when a positive voltage is applied, a positive charge is generated on the lower surfaces of the third electrodes 14a, 14b, and the second electrode 8a is generated by electrostatic induction. , 8b appear on the upper surface, and the dielectric support layer 7 is attracted to the third electrodes 14a, 14b. That is, the function of assisting the dielectric support layer 7 to return to the original position can increase the switching speed of the switch from the off state to the on state.
In the sixth embodiment, an example in which the present invention is applied to the configuration shown in the first embodiment has been described. However, the sixth embodiment may be applied to the configurations shown in the second to fifth embodiments, and the same effects can be obtained. it can.
[0038]
As described above, according to the sixth embodiment, the same effects as those of the first to fifth embodiments can be obtained, and the loss can be reduced. Further, the speed at which the dielectric support layer 7 returns to the original position can be increased.
[0039]
Embodiment 7 FIG.
FIG. 11 is a sectional view showing a high-frequency switch according to Embodiment 7 of the present invention. In the drawing, reference numerals 17a and 17b denote fourth electrodes. The fourth electrodes 17a and 17b are formed on the lower surface of the dielectric support layer 7.
In addition, components that are the same as or correspond to those in FIG. 3 are denoted by the same reference numerals, and redundant description is omitted.
[0040]
Next, the operation will be described.
Since the distance between the first electrode 6a, 6b and the fourth electrode 17a, 17b is shorter than the distance between the second electrode 8a, 8b, the dielectric support layer 7 is connected to the first electrode 6a, 6b. The voltage required for the displacement to the side may be smaller.
In the seventh embodiment, an example in which the present invention is applied to the configuration shown in the first embodiment has been described. However, the seventh embodiment may be applied to the configurations shown in the second to sixth embodiments, and similar effects can be obtained. it can.
[0041]
As described above, according to the seventh embodiment, the same effects as in the first to sixth embodiments are obtained, and the dielectric support layer 7 is displaced toward the first electrodes 6a and 6b, that is, the switch is switched. Reduce the voltage required to turn off the transistor.
[0042]
Embodiment 8 FIG.
FIG. 12 is a circuit diagram showing a single-pole double-throw switch according to Embodiment 8 of the present invention. In FIG. 12, reference numeral 18 denotes a high-frequency signal input terminal, 19a and 19b denote high-frequency signal output terminals, 20a and 20b denote high-frequency transmission lines, Reference numerals 21a and 21b are high-frequency switches corresponding to any of the first to seventh embodiments. The line length of the high-frequency transmission lines 20a and 20b is １ ／ wavelength at the required center frequency.
[0043]
Next, the operation will be described.
When the high-frequency switch 21a is on and the high-frequency switch 21b is off, the high-frequency switch 21b has a short-circuit relationship between the signal line 9 and the ground conductor 3 in terms of RF. At this time, the high-frequency transmission line 20b side is open from the high-frequency signal input terminal 18 via the high-frequency transmission line 20b. Therefore, the high-frequency signal input from the high-frequency signal input terminal 18 is output to the high-frequency signal output terminal 19a.
[0044]
On the other hand, when the high-frequency switch 21b is on and the high-frequency switch 21a is off, the high-frequency switch 21a has an RF short circuit between the signal line 9 and the ground conductor 3. At this time, the high-frequency transmission line 20a side is opened from the high-frequency signal input terminal 18 via the high-frequency transmission line 20a. Therefore, the high-frequency signal input from the high-frequency signal input terminal 18 is output to the high-frequency signal output terminal 19b.
[0045]
As described above, according to the eighth embodiment, a single-pole double-throw switch can be configured by combining the high-frequency switches described in the first to seventh embodiments.
[0046]
In FIG. 12, the description is limited to the single-pole, double-throw switch. However, a multi-pole, multiple-throw switch may be configured by combining the high-frequency switches described in the first to seventh embodiments.
[0047]
【The invention's effect】
As described above, according to the present invention, the substrate having the cavity, the first electrode and the ground conductor formed on the cavity surface, the support layer formed via the cavity space, and the support layer formed on the support layer surface A second electrode and a high-frequency signal transmission line, the support layer is displaced by an electrostatic force acting between the first electrode and the second electrode in response to a control signal given to the first electrode, Since the conductor and the high-frequency signal transmission line are configured to be brought into a contact state or a non-contact state by direct contact between metals to switch a switch to an off state or an on state, a member corresponding to the anchor of the conventional technology is provided. Since it does not exist, there is an effect that a loss due to structural mismatch is avoided and a high-frequency switch with low loss and high isolation is obtained.
[0048]
According to the present invention, a substrate having a cavity, a first electrode and a ground conductor formed on the cavity surface, a support layer formed via the cavity space, and a second electrode formed on the support layer surface And a high-frequency signal transmission line, wherein the support layer is displaced by an electrostatic force acting between the first electrode and the second electrode in response to a control signal given to the first electrode, and the ground conductor and the high-frequency signal transmission Since the line is brought into a contact state or a non-contact state via a capacitor, and the switch is switched to an off state or an on state depending on the strength of the electric coupling, there is no member corresponding to the anchor of the conventional technology. Thus, a high-frequency switch with low loss and high isolation can be obtained by avoiding loss due to structural mismatch. Further, there is an effect that the durability of the contact portion can be improved.
[0049]
According to this invention, the substrate having the cavity, the second electrode and the high-frequency signal transmission line formed on the cavity surface, the support layer formed via the cavity space, and the first layer formed on the support layer surface The support layer is displaced by an electrostatic force acting between the second electrode and the first electrode in response to a control signal given to the first electrode, and the high-frequency signal transmission line and the ground conductor are displaced. Since the conductors are configured to be in a contact state or a non-contact state by direct contact between metals to switch the switch between the off state and the on state, there is no member corresponding to the anchor of the prior art, so the structure is There is an effect that a loss due to the above mismatch is avoided and a high-frequency switch with low loss and high isolation can be obtained.
[0050]
According to this invention, the substrate having the cavity, the second electrode and the high-frequency signal transmission line formed on the cavity surface, the support layer formed via the cavity space, and the first layer formed on the support layer surface The support layer is displaced by an electrostatic force acting between the second electrode and the first electrode in response to a control signal given to the first electrode, and the high-frequency signal transmission line and the ground conductor are displaced. Since the conductor is brought into a contact state or a non-contact state via a capacitor, and the switch is switched to an off state or an on state depending on the strength of the electric coupling, there is no member corresponding to the anchor of the prior art. Thus, a high-frequency switch with low loss and high isolation can be obtained by avoiding loss due to structural mismatch. Further, there is an effect that the durability of the contact portion can be improved.
[0051]
According to the present invention, since a part of the support layer is configured to be thin, the spring constant of the support layer is reduced, and a high-frequency switch capable of reducing the voltage value of a control signal for displacing the support layer is provided. There is an effect that can be obtained.
[0052]
According to the present invention, since the through-hole that penetrates the second electrode and the support layer is provided, it can be used as a passage for air when the support layer is displaced, and the displacement speed of the support layer, that is, There is an effect that a high-frequency switch that can increase the switching speed of the switch can be obtained.
[0053]
According to the present invention, a cover substrate is provided such that the substrate and the cavity face each other, the third electrode and the shield conductor formed on the cavity surface of the cover substrate, and the ground conductor and the high-frequency signal of the support layer are provided. At the time of restoration from the contact state between the transmission lines, the support layer is displaced in the restoration direction by an attractive force caused by an electrostatic force acting between the third electrode and the second electrode according to a control signal given to the third electrode. With this configuration, the displacement speed at the time of restoring the support layer, that is, the switching speed of the switch from the off state to the on state can be increased.
In addition, the first electrode, the ground conductor, the third electrode, the shield conductor, the substrate, and the cover substrate can confine the electromagnetic field space formed by the high-frequency signal transmission line, and provide an effect of obtaining a high-frequency switch capable of reducing radiation loss. is there.
[0054]
According to this invention, since the second electrode is formed on the surface of the support layer facing the first electrode, the distance between the first electrode and the second electrode is reduced, and the support layer is formed. This has the effect of obtaining a high-frequency switch that can reduce the voltage value of the control signal for displacing the control signal.
[0055]
According to this invention, the high-frequency switch according to any one of claims 1 to 8 is combined to form a single-pole double-throw switch, so that a single-pole double-throw switch with low loss and high isolation can be obtained. effective.
[0056]
According to this invention, the high-frequency switch according to any one of claims 1 to 8 is combined to form a multi-pole multi-throw switch, so that a multi-pole multi-throw switch with low loss and high isolation can be obtained. effective.
[Brief description of the drawings]
FIG. 1 is a perspective view showing a high-frequency switch according to Embodiment 1 of the present invention.
FIG. 2 is a plan view showing the high-frequency switch according to Embodiment 1 of the present invention.
FIG. 3 is an AA ′ arrow view showing the high-frequency switch according to the first embodiment of the present invention;
FIG. 4 is a BB ′ arrow view showing the high-frequency switch according to the first embodiment of the present invention;
FIG. 5 is an AA ′ arrow view showing a high-frequency switch according to a second embodiment of the present invention.
FIG. 6 is an AA ′ arrow view showing a high-frequency switch according to Embodiment 3 of the present invention;
FIG. 7 is an AA ′ arrow view showing a high-frequency switch according to Embodiment 3 of the present invention.
FIG. 8 is a plan view showing a high-frequency switch according to Embodiment 4 of the present invention.
FIG. 9 is a plan view showing a high-frequency switch according to Embodiment 5 of the present invention.
FIG. 10 is a sectional view showing a high-frequency switch according to Embodiment 6 of the present invention.
FIG. 11 is a sectional view showing a high-frequency switch according to Embodiment 7 of the present invention.
FIG. 12 is a circuit diagram showing a single-pole double-throw switch according to an eighth embodiment of the present invention.
FIG. 13 is a perspective view showing a conventional high-frequency switch.
FIG. 14 is a circuit diagram showing a conventional high-frequency switch.
[Explanation of symbols]
1 substrate, 2 dielectric layer, 3, 23, 23a ground conductor, 4a, 4b control terminal, 5a, 5b control signal line, 6a, 6b, 26a, 26b first electrode, 7, 7a dielectric support layer (support Layer), 8a, 8b, 28a, 28b Second electrode, 9, 9a, 29 Signal line (high-frequency signal transmission line), 10 contact part, 11 cavity, 12a to 12f hole (through hole), 13 lid substrate, 14a , 14b third electrode, 15 shield conductor, 16 second dielectric layer, 17a, 17b fourth electrode, 18 high-frequency signal input terminal, 19a, 19b high-frequency signal output terminal, 20a, 20b high-frequency transmission line, 21a, 21b High frequency switch.

Claims (10)

A substrate having a cavity;
A first electrode and a ground conductor formed on the cavity surface;
A support layer formed through the cavity space,
A second electrode and a high-frequency signal transmission line formed on the support layer surface, and act between the first electrode and the second electrode according to a control signal given to the first electrode; The support layer is displaced by electrostatic force, and the ground conductor and the high-frequency signal transmission line are brought into a contact state or a non-contact state by direct contact between metals, and a switch is switched to an off state or an on state. And high frequency switch. A substrate having a cavity;
A first electrode and a ground conductor formed on the cavity surface;
A support layer formed through the cavity space,
A second electrode and a high-frequency signal transmission line formed on the support layer surface, and act between the first electrode and the second electrode according to a control signal given to the first electrode; The support layer is displaced by electrostatic force, and the ground conductor and the high-frequency signal transmission line are brought into a contact state or a non-contact state via a capacitor, and a switch is switched to an off state or an on state depending on the strength of electrical coupling. A high-frequency switch characterized in that: A substrate having a cavity;
A second electrode and a high-frequency signal transmission line formed on the cavity surface;
A support layer formed through the cavity space,
A first electrode and a ground conductor formed on the support layer surface,
According to a control signal given to the first electrode, the support layer is displaced by an electrostatic force acting between the first electrode and the second electrode, and the gap between the high-frequency signal transmission line and the ground conductor is displaced. A high-frequency switch characterized in that the switch is turned off or on by bringing the metal into a contact state or a non-contact state by direct contact between the metals. A substrate having a cavity;
A second electrode and a high-frequency signal transmission line formed on the cavity surface;
A support layer formed through the cavity space,
A first electrode and a ground conductor formed on the support layer surface,
In response to a control signal given to the first electrode, the support layer is displaced by an electrostatic force acting between the first electrode and the second electrode, and the gap between the high-frequency signal transmission line and the ground conductor is displaced. A high-frequency switch, wherein the switch is switched to an off state or an on state depending on the strength of electrical coupling by bringing the switch into a contact state or a non-contact state via a capacitor. The high frequency switch according to any one of claims 1 to 4, wherein a part of the support layer is thinned. 3. The high-frequency switch according to claim 1, further comprising a through-hole penetrating the second electrode and the support layer. A lid substrate arranged so that the substrate and the cavities face each other,
A third electrode and a shield conductor formed on the cavity surface of the lid substrate;
At the time of restoring from the contact state between the ground conductor and the high-frequency signal transmission line of the support layer, between the third electrode and the second electrode in accordance with a control signal given to the third electrode. 3. The high-frequency switch according to claim 1, wherein the support layer is displaced in a restoring direction by an attraction force generated by an applied electrostatic force. The high-frequency switch according to claim 1 or 2, wherein the second electrode is formed on a surface of the support layer facing the first electrode. 9. A single-pole, double-throw switch comprising a combination of the high-frequency switches according to claim 1. A multi-pole, multi-throw switch comprising a combination of the high-frequency switches according to any one of claims 1 to 8.

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