JP2008159808A - Holder for vapor-phase epitaxial growth - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a holder for a vapor-phase epitaxial growing device capable of fixing and supporting a substrate when fixing and supporting it facedown, without its lower surface supported. <P>SOLUTION: The holder 1 for the vapor-phase epitaxial growth supports and fixes the substrate 3 facedown to a reception hole 12 of the holder body 11, and a plurality of spring members 4, for supporting the substrate 3 by pressing with the spring force in a diameter-inward direction, are provided inside the reception hole 12. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a jig for vapor phase epitaxial growth for producing a semiconductor product by vapor phase epitaxial growth of a crystal on a substrate surface.

  One method for vapor phase epitaxial growth of compound semiconductor crystals on the substrate surface is the MOVPE method. In this MOVPE method, a group III organometallic source gas and a group V source gas are introduced into a reaction furnace as a mixed gas of high-purity hydrogen carrier gas, and the source material is pyrolyzed near a heated substrate in the reaction furnace. Thus, the compound semiconductor crystal is grown by vapor phase epitaxial growth on the substrate surface. In one system of the MOVPE apparatus used for the MOVPE method, a substrate is fixed and supported face-down by a jig for vapor phase epitaxial growth (hereinafter referred to as a growth jig) provided in a reaction furnace.

  Since a conventional growth jig having a face-down structure is affected by gravity, the substrate 3 is set in the accommodation hole 22 provided in the jig body 11 as shown in FIGS. At this time, a claw 2 for fixing the substrate 3 is provided so as to protrude from the lower edge of the accommodation hole 22 toward the hole side, and the claw 2 prevents the substrate 3 from falling.

JP 2004-22836 A

  However, the conventional face-down growth jig 1 has the following problems.

  (1) Since the epitaxial layer does not grow on the nail 2 portion by fixing the substrate 3 with the nail 2 or the like, the growth surface 14 portion of the substrate 3 where the nail 2 is located can be used as a product. Can not.

  (2) Since the portion of the nail 2 protrudes below the growth surface 14 of the substrate 3, the flow of the mixed gas is disturbed at the portion of the nail 2, and the epitaxial growth becomes uneven in the peripheral portion of the nail 2. In addition, by repeatedly performing epitaxial growth, deposits are also accumulated in the nail 2 portion, and the nail 2 becomes larger. Therefore, each time the epitaxial growth is repeated, the influence range of the nail 2 portion is expanded, and the final device process is performed. Yield at is reduced.

  (3) The influence of the nail 2 is reduced by devising the shape and size of the nail 2, but there is a limit to reducing the size of the nail 2 depending on the size and weight of the substrate 3 to be used. .

  Accordingly, an object of the present invention is to provide a vapor phase epitaxial growth jig that can be fixed without supporting the lower surface of the substrate when the substrate is fixed and supported with a face-down structure.

  In order to achieve the above object, according to the first aspect of the present invention, there is provided a jig for vapor phase epitaxial growth in which a substrate is supported and fixed in a receiving hole of a jig body with a face-down structure. A jig for vapor phase epitaxy characterized in that a plurality of spring members that are biased inward and supported by a spring force are provided.

  According to a second aspect of the present invention, the spring member includes an arc plate portion attached to the inner peripheral surface of the accommodation hole, and a plate spring portion extending obliquely downward inside the arc plate portion from the upper edge of the arc plate portion. The jig for vapor phase epitaxial growth according to claim 1.

  Invention of Claim 3 is the jig | tool for vapor phase epitaxial growth of Claim 1 or 2 which comprised the said spring member with the same material as the said jig | tool main body, or a material with favorable thermal conductivity, intensity | strength, and elasticity. .

  A fourth aspect of the present invention is the vapor phase epitaxial growth jig according to the third aspect, wherein the constituent material of the spring member is Mo.

According to the present invention, the following effects can be expected.
(1) A growth jig with a face-down structure. Instead of a nail that supports the lower surface of the substrate, the entire growth surface of the substrate after epitaxial growth is provided by using a spring that is provided in the accommodation hole and supports the peripheral surface of the substrate. Can be used as a product.
(2) By using the spring of (1), it is possible to eliminate non-uniformity in the in-plane distribution of epitaxial growth.
(3) Since the in-plane characteristics are uniform, the yield in the final device process can be improved.

  Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

  The object of the present invention is to achieve the following.

  (1) A growth jig with a face-down structure is used to eliminate the claw, and the substrate can be fixed to the growth jig with a member other than the claw.

  (2) Make sure that the substrate does not fall from the growth jig when setting the substrate.

  (3) In order to improve the production throughput, the substrate can be easily set and taken out.

  (4) Ensure that heat is evenly transferred to the board.

  (5) Epitaxial layers are grown uniformly on the entire surface of the substrate to improve the yield in the final device process.

  Therefore, in the present invention, a spring member is attached to the side surface (inside the accommodation hole) of the substrate setting portion of the growth jig instead of the claw, and the substrate is fixed by the spring force of the spring member. Further, the thermal uniformity of the substrate is prevented from being lost at the portion where the substrate and the spring member are in contact.

  FIG. 1 is a structural diagram of a vapor phase epitaxial growth jig according to a preferred embodiment of the present invention. 1A is a bottom view, and FIG. 1B is a cross-sectional view taken along line 1B-1B of FIG.

  As shown in FIGS. 1A and 1B, the growth jig 1 according to the present embodiment is provided with a receiving hole 12 in the jig body 11, and the substrate 3 is faced to the receiving hole 12. Housed down. A plurality of springs 4 for urging the substrate 3 radially inward are provided in the accommodation hole 12, for example, four at 90 ° intervals along the circumferential surface of the accommodation hole 12. The accommodation hole 12 is formed to have a diameter slightly larger than the diameter of the substrate 3 to be accommodated, as much as the spring 4 is attached.

  As shown in FIG. 2, the spring 4 includes an arc plate portion 6 attached to the inner peripheral surface of the accommodation hole 12 and a plate spring portion 7 extending obliquely downward inside the arc plate portion from the upper edge of the arc plate portion 6. It consists of. The leaf spring portion 7 can be bent toward the arc plate portion 6 side.

  In order to make the heat conduction to the substrate 3 uniform, the spring 4 is made of the same material as the jig main body 11 or a material having good thermal conductivity, strength, and elasticity. Can be mentioned.

  Next, the operation of the present embodiment will be described.

  As shown in FIGS. 7A and 7B, the conventional growth jig supports and fixes the lower surface of the substrate 3 using the claws 2 to prevent the substrate 3 from falling. Thus, by fixing the substrate 3 with the claws 2, the marks of the claws 2 are attached on the growth surface 14 of the substrate 3, and an epitaxial layer is grown on a portion hidden by the claws 2 of the growth surface 14. I couldn't let you. Further, since the claw 2 protrudes from the lower surface 13 of the jig body 11 by the thickness, the claw 2 disturbs the gas flow around the substrate 3, and the epitaxial layer on the growth surface 14 of the substrate 3 is disturbed. In-plane distribution (layer thickness, etc.) will deteriorate.

  Therefore, the growth jig 1 according to the present embodiment uses the spring 4 instead of the claw for fixing the substrate 3. For example, as shown in FIG. 2, four springs 4 are attached to the inner peripheral surface of the accommodation hole 12 in the growth jig 1 at 90 ° intervals. Thereafter, as shown in FIG. 3, when the substrate 3 is set in the accommodation hole 12, the lower edge of the substrate 3 comes into contact with the leaf spring portion 7 of each spring 4, and the substrate 3 is supported and fixed.

  Thereafter, as shown in FIG. 4, when the heat equalizing plate 5 is placed on the back surface (upper surface) of the substrate 3, the leaf spring portion 7 moves outward in the radial direction of the accommodation hole 12 due to the weight of the heat equalizing plate 5 and the substrate 3. The substrate 3 is sunk by being bent (elastically deformed). Then, when the position of the growth surface (lower surface) 14 of the substrate 3 reaches the tip position of the leaf spring portion 7, the circumferential surface of the substrate 3 is radially inward by the elasticity of the spring 4 (spring force of the leaf spring portion 7) F1. The substrate 3 is supported and fixed so that the growth surface 14 and the lower surface 13 of the jig body 11 are flush with each other. Thereby, the fall of the board | substrate 3 is prevented. Here, the elasticity of the spring 4 is adjusted so that the lower surface 13 of the jig body 11 and the growth surface 14 of the substrate 3 are flush with each other, and the diameter of the substrate 3 and the weight of the substrate 3 and the heat equalizing plate 5 are adjusted. It is changed appropriately according to.

  In this way, epitaxial growth is performed with the spring 4 supporting and fixing the peripheral surface of the substrate 3. Since the spring 4 does not fix the growth surface 14 of the substrate 3, when the epitaxial layer is grown on the growth surface 14 of the substrate 3, the growth surface 14 is not adversely affected. Therefore, the epitaxial layer can be uniformly grown on the growth surface 14 of the substrate 3. That is, since there is no portion where the growth of the epitaxial layer is hindered on the growth surface 14 of the substrate 3, the entire surface of the substrate 3 after the epitaxial growth can be used as a product.

  Further, in the growth jig 1 according to the present embodiment, the substrate 3 can be set in the accommodation hole 12 or taken out from the accommodation hole 12 by the same method as the conventional method, and therefore, with the use of the spring 4. Production throughput will not deteriorate.

  The following can be considered as modifications of the present embodiment.

  (1) The method of fixing the substrate 3 with the spring 4 may be changed as appropriate. For example, as shown in FIG. 5 as a modification of FIG. The accommodation hole 12 is formed to have substantially the same diameter as the substrate 3. The springs 4 are fitted into these grooves 15 and attached. Thereafter, when the substrate 3 and the soaking plate 5 are sequentially set in the receiving hole 12, the spring 4 acts as in FIGS. At this time, as shown in FIG. 6, the tip position P1 of the leaf spring portion 7 and the inner peripheral surface of the receiving hole 12 are flush with each other, and the growth surface 14 of the substrate 3 and the lower surface 13 of the jig body 11 are flush with each other. In this state, the substrate 3 is supported and fixed by the spring 4.

  (2) The shape and material of the spring 4 may be changed as appropriate. In particular, the shape of the leaf spring portion 7 of the spring 4 is not limited as long as the substrate 3 can be sufficiently supported and fixed.

  (3) The number of places where the substrate 3 is fixed by the spring 4, that is, the number of attachments of the spring 4 is not limited to four, and if the substrate 3 can be sufficiently supported and fixed, two, three, or five or more Either may be sufficient.

  (4) In order to prevent the gas from flowing into the back surface of the substrate 3, a slit is provided at a position directly above the spring 4 in the soaking plate 5 so that the gas escapes above the soaking plate 5 along the slit. Also good. On the other hand, in the growth jig of the type in which the spring 4 is fitted into the groove 15 provided in the accommodation hole 12 and attached as shown in FIG. Since there is almost no gap, gas does not flow around the back surface of the substrate 3, and it is not necessary to provide a slit in the soaking plate 5.

  (5) An epitaxial wafer (first substrate) with an epitaxial layer formed on the substrate and a separately prepared substrate (second substrate) are superimposed on the surface on the epitaxial layer side, and this superimposed substrate is set in a container. Seal under reduced pressure. Then, this sealed container is set in a pressurizing device, and the sealed container is further pressurized from the outside at atmospheric pressure or higher with gas and / or liquid. Through the series of steps, the first substrate and the second substrate can be attached. In these steps, the second substrate may be one having excellent thermal conductivity, and foreign substances other than semiconductors such as metals, dielectrics and insulators may be interposed between the first substrate and the second substrate. It may be interposed, or may be heated when pressurized from the outside. Furthermore, the first substrate may be removed after the attachment. The epitaxial layer may be a semiconductor layer that emits light using an electroluminescence effect when a forward voltage is applied.

1 is a structural diagram of a jig for vapor phase epitaxial growth according to a preferred embodiment of the present invention. 1A is a bottom view, and FIG. 1B is a cross-sectional view taken along line 1B-1B of FIG. It is a principal part enlarged view of the jig | tool for vapor phase epitaxial growth shown in FIG.1 (b), and is a figure which shows the state before a substrate set. It is a figure which shows the state after board | substrate setting. It is a figure which shows the state after a soaking plate set. It is a modification of FIG. 2, and is a view showing a state before a substrate is set. It is a figure which shows the state which set the board | substrate and the soaking | uniform-heating board to the jig | tool for vapor phase epitaxial growth of FIG. It is a structural diagram of a conventional jig for vapor phase epitaxial growth. 7A is a bottom view, and FIG. 7B is a cross-sectional view taken along line 7B-7B in FIG. 7A.

Explanation of symbols

1 Growth jig (Jig for vapor phase epitaxial growth)
3 Substrate 4 Spring (spring member)
11 Jig body 12 Housing hole

Claims (4)

  In a jig for vapor phase epitaxial growth in which a substrate is supported and fixed to a receiving hole of a jig body with a face-down structure, a plurality of spring members for supporting the substrate by a spring force by urging the substrate radially inward in the receiving hole A jig for vapor phase epitaxial growth characterized in that it is provided individually.   2. The gas phase according to claim 1, wherein the spring member includes an arc plate portion attached to an inner peripheral surface of the accommodation hole, and a plate spring portion extending obliquely downward inside the arc plate portion from an upper edge of the arc plate portion. Epitaxial growth jig.   The jig for vapor phase epitaxial growth according to claim 1 or 2, wherein the spring member is made of the same material as the jig body or a material having good thermal conductivity, strength, and elasticity.   The jig for vapor phase epitaxial growth according to claim 3, wherein the constituent material of the spring member is Mo.

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