JP2008155323A - Wet polishing method and wet polishing device - Google Patents

Wet polishing method and wet polishing device Download PDF

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JP2008155323A
JP2008155323A JP2006347554A JP2006347554A JP2008155323A JP 2008155323 A JP2008155323 A JP 2008155323A JP 2006347554 A JP2006347554 A JP 2006347554A JP 2006347554 A JP2006347554 A JP 2006347554A JP 2008155323 A JP2008155323 A JP 2008155323A
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polishing
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JP4954694B2 (en
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Hiroshi Hatayama
博史 畑山
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Resonac Holdings Corp
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Showa Denko KK
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a wet polishing method which shortens through-put by using a conventional polishing device as it is, or by slight remodeling, and also to provide a wet polishing device for carrying out this method. <P>SOLUTION: The method applies the wet polishing device provided with a polishing section (10) for polishing a workpiece (S) by holding it between an upper polishing plate and a lower polishing plate arranged so as to be opposed to each other in the vertical direction while supplying polishing fluid, and workpiece developing stages (41) (71) arranged in at least one of the front and the rear stage of the polishing section (10), having mounting trays (45) (75) for mounting the workpiece (S) in recessed portions formed in their upper surfaces. It stores an etchant (W) in the recessed portions of the mounting trays (45) (75), and while it polishes the workpiece (S) by the polishing section (10), it makes another workpiece on stand-to in a state of it being immersed in the etchant (W) in the workpiece developing stages (41) (71), and performs etching. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

この発明は、エッチャントによるエッチングと研磨液による研磨とを行う湿式研磨方法、およびこの研磨方法を実施するためのの湿式研磨装置に関する。   The present invention relates to a wet polishing method for performing etching with an etchant and polishing with a polishing liquid, and a wet polishing apparatus for performing the polishing method.

高精度の表面仕上げが要求される磁気ディスク用Ni−Pめっきアルミニウム基板の研磨では、工程を複数回に分け、粗研磨においては酸性の分散媒に粒径0.5〜1.7μm程度のアルミナを懸濁させた研磨液を用い、仕上げ研磨では同じ酸性の分散媒に粒径7〜50nm程度のコロイダルシリカを懸濁させた研磨液を用いて、所謂、化学的なエッチングと機械的研磨を組み合わせた湿式研磨を行なっている。   In the polishing of Ni-P plated aluminum substrate for magnetic disk, which requires high precision surface finish, the process is divided into a plurality of times, and in rough polishing, alumina having a particle size of about 0.5 to 1.7 μm is used as an acidic dispersion medium. In the final polishing, so-called chemical etching and mechanical polishing are performed using a polishing liquid in which colloidal silica having a particle size of about 7 to 50 nm is suspended in the same acidic dispersion medium. Combined wet polishing is performed.

今日この工程は自動研磨機によって行われるのが一般的である、単位時間当たりの研磨処理能力、いわゆるスループットは研磨加工に費やす時間で律速されており、研磨時間を如何に短くするかが生産性を上げるポイントとなっている。短時間で高精度に仕上げるために、使用する研磨剤や研磨布の種類・性状ならびに研磨機の加工圧・回転数など、種々の条件の組み合わせが検討されているが、加工時間と仕上り精度はそれぞれトレードオフの関係にあり、革新的な打開策を見出すことは難しい。   Today, this process is generally performed by an automatic polisher. Polishing capacity per unit time, so-called throughput, is limited by the time spent on polishing, and how to shorten the polishing time is productivity It has become a point to raise. In order to finish with high accuracy in a short time, the combination of various conditions such as the type and properties of the abrasive and polishing cloth used, and the processing pressure and rotation speed of the polishing machine are being studied. Each has a trade-off relationship, and it is difficult to find innovative breakthroughs.

加工に要する時間を解析すると、初期段階においては被加工物表面の自然酸化膜を除去するのに費され、次いでは基板の金属皮膜(Ni−Pめっき)を平坦かつ鏡面に研磨するのに費やされている。一般的に自然酸化膜は金属皮膜よりも研磨されにくいという性質を有しているが、研磨剤は金属皮膜(Ni−Pめっき)を湿式研磨することに最適化されていることが多い。このため、研磨前に自然酸化膜を薬液による溶解またはガスによる乾式エッチングをして除去しておく方法も考案されている(特許文献1参照)。
特開2005−277396号公報
When analyzing the time required for processing, it is spent in the initial stage to remove the natural oxide film on the surface of the workpiece, and then it is spent to polish the substrate metal film (Ni-P plating) to a flat and mirror surface. It has been done. In general, a natural oxide film has a property that it is harder to polish than a metal film, but an abrasive is often optimized for wet polishing of a metal film (Ni-P plating). For this reason, a method has been devised in which the natural oxide film is removed by dissolution with a chemical solution or dry etching with gas before polishing (see Patent Document 1).
JP 2005-277396 A

しかし、特許文献1に記載された方法では、研磨加工の前段に自然酸化膜の除去工程を行うエッチング装置を新たに設けるか、あるいは研磨圧力を変える機構を設けねばならない。このため、この方法を実施するためには従前の研磨装置の改造は避けられず、しかも大規模改造となる。また、特許文献1の図2に示すように、基板にエッチング用の薬液を噴霧するものであるから処理効率が悪く、所定の仕上がり表面粗さを得るためのスループットは殆ど短縮されない。   However, in the method described in Patent Document 1, it is necessary to newly provide an etching apparatus for performing a natural oxide film removal step before the polishing process or to provide a mechanism for changing the polishing pressure. For this reason, in order to carry out this method, it is inevitable to modify the conventional polishing apparatus, and it is a large-scale modification. Further, as shown in FIG. 2 of Patent Document 1, since the chemical solution for etching is sprayed on the substrate, the processing efficiency is poor, and the throughput for obtaining a predetermined finished surface roughness is hardly shortened.

本発明は、上述した技術背景に鑑み、従前の研磨装置をそのまま、あるいは僅かな改造でスループットを短縮できる湿式研磨方法およびこの研磨方法を実施する湿式研磨装置の提供を目的とする。   In view of the above-described technical background, an object of the present invention is to provide a wet polishing method capable of reducing the throughput as it is with a conventional polishing apparatus as it is or with a slight modification, and a wet polishing apparatus for performing this polishing method.

即ち、本発明の湿式研磨方法は下記[1]〜[5]に記載の構成を有する。   That is, the wet polishing method of the present invention has the configurations described in [1] to [5] below.

[1] 被加工物を上下に対向配置された上定盤と下定盤との間に挟持して研磨液を供給しながら研磨する研磨部と、前記研磨部の前段および後段の少なくとも一方に配置され、上面に形成された凹陥部内に被加工物を載置する載置トレイを有する被加工物展開ステージとを備えた湿式研磨装置を用い、
前記載置トレイの凹陥部内にエッチャントを貯留し、前記研磨部で被加工物を研磨する間に、前記被加工物展開ステージにおいて他の被加工物をエッチャントに浸した状態で待機させてエッチングすることを特徴とする湿式研磨方法。
[1] A polishing unit that sandwiches a workpiece between an upper surface plate and a lower surface plate that are vertically opposed to each other and polishes while supplying a polishing liquid, and is disposed in at least one of a front stage and a rear stage of the polishing unit. And using a wet polishing apparatus provided with a workpiece development stage having a placement tray for placing the workpiece in a recessed portion formed on the upper surface,
The etchant is stored in the recessed portion of the placing tray, and while the workpiece is polished by the polishing unit, the workpiece is developed while waiting for another workpiece to be immersed in the etchant at the workpiece development stage. A wet polishing method characterized by the above.

[2] 前記被加工物展開ステージは、前記研磨部の前段に配置され、研磨部に装填する被加工物を待機させる装填用ステージであり、被加工物をエッチャントに浸してエッチングした後に研磨する前項1に記載の湿式研磨方法。   [2] The workpiece developing stage is a loading stage that is arranged in front of the polishing unit and waits for the workpiece to be loaded in the polishing unit. The workpiece is polished after being immersed in an etchant and etched. 2. The wet polishing method according to item 1.

[3] 前記被加工物展開ステージは、前記研磨部の後段に配置され、湿式研磨装置から排出する研磨済みの被加工物を待機させる排出用ステージであり、被加工物を研磨した後にエッチャントに浸してエッチングする前項1または2に記載の湿式研磨方法。   [3] The workpiece development stage is a discharge stage that is arranged at the rear stage of the polishing unit and waits for the polished workpiece to be discharged from the wet polishing apparatus, and is used as an etchant after polishing the workpiece. 3. The wet polishing method according to 1 or 2 above, wherein immersion is performed and etching is performed.

[4] 前記被加工物はアルミニウム製磁気ディスク基板である前項1〜3のいずれかに記載の湿式研磨方法。   [4] The wet polishing method according to any one of items 1 to 3, wherein the workpiece is an aluminum magnetic disk substrate.

[5] 前記エッチャントとして、前記研磨液の分散媒、この分散媒の濃縮液、この分散媒の希釈液のうちのいずれかを用いる前項1〜4のいずれかに記載の湿式研磨方法。   [5] The wet polishing method according to any one of items 1 to 4, wherein any one of a dispersion medium of the polishing liquid, a concentrated liquid of the dispersion medium, and a dilution liquid of the dispersion medium is used as the etchant.

また、本発明の湿式研磨装置は下記[6]〜[12]に記載の構成を有する。   Moreover, the wet polishing apparatus of the present invention has a configuration described in [6] to [12] below.

[6] 被加工物を上下に対向配置された上定盤と下定盤との間に挟持して研磨液を供給しながら研磨する研磨部と、前記研磨部の前段および後段の少なくとも一方に配置され、被加工物を載置して待機させる載置トレイを有する被加工物展開ステージとを備える湿式研磨装置であって、
前記被加工物展開ステージの載置トレイが上面にエッチャントを貯留する凹陥部を有し、被加工物をエッチャントに浸した状態で載置してエッチングするものとなされていることを特徴とする湿式研磨装置。
[6] A polishing unit that sandwiches a workpiece between an upper surface plate and a lower surface plate that are vertically opposed to each other and polishes while supplying a polishing liquid, and is disposed in at least one of a front stage and a rear stage of the polishing unit. A wet polishing apparatus comprising a workpiece development stage having a mounting tray on which the workpiece is placed and stands by,
A wet tray characterized in that a mounting tray of the workpiece development stage has a recessed portion for storing an etchant on an upper surface, and the workpiece is placed and etched while being immersed in the etchant. Polishing equipment.

[7] 前記被加工物展開ステージは、前記研磨部の前段に配置され、前記研磨部に装填する被加工物を待機させる装填用ステージである前項6に記載の湿式研磨装置。   [7] The wet polishing apparatus according to [6], wherein the workpiece unfolding stage is a loading stage that is arranged in a front stage of the polishing unit and waits for a workpiece to be loaded in the polishing unit.

[8] 前記被加工物展開ステージは、前記研磨部の後段に配置され、湿式研磨装置から排出する研磨済みの被加工物を待機させる排出用ステージである前項6または7に記載の湿式研磨装置。   [8] The wet polishing apparatus according to [6] or [7], wherein the workpiece development stage is a discharge stage that is disposed at a subsequent stage of the polishing unit and waits for a polished workpiece discharged from the wet polishing apparatus. .

[9] 載置移載部として、前記被加工物展開ステージと、把持部により被加工物を把持し、前記研磨部と被加工物展開ステージとの間で被加工物を移載する移載装置とを有する前項6〜8のいずれかに記載の湿式研磨装置。   [9] As the placement transfer unit, transfer that holds the workpiece by the workpiece development stage and the holding unit, and transfers the workpiece between the polishing unit and the workpiece development stage. 9. The wet polishing apparatus according to any one of the preceding items 6 to 8, comprising an apparatus.

[10] 前記研磨部が被加工物を装填する保持孔が形成されたキャリアを有し、前記載置移載部が前記キャリアの保持孔と同数の載置トレイおよび把持部を有し、全被加工物の移載を一括して行う前項9に記載の湿式研磨装置
[11] 前記被加工物展開ステージが前記研磨部のキャリアと同数のプレートを有し、各プレートが各キャリアの保持孔と同数の載置トレイを有する前項10に記載の湿式研磨装置。
[10] The polishing unit includes a carrier in which a holding hole for loading a workpiece is formed, and the placement transfer unit includes the same number of mounting trays and gripping units as the holding hole of the carrier. The wet polishing apparatus according to 9 above, wherein the workpieces are collectively transferred. [11] The workpiece development stage has the same number of plates as the carrier of the polishing unit, and each plate has a holding hole of each carrier. 11. The wet polishing apparatus according to the above item 10, having the same number of mounting trays.

[12] 前記プレートに形成された有底の凹部にリング状の載置トレイを嵌め込むことにより凹陥部が形成され、かつ前記凹部の底部に凹部を連通させる溝が設けられている前項11に記載の湿式研磨装置。   [12] In the preceding paragraph 11, a recess is formed by fitting a ring-shaped mounting tray into a bottomed recess formed in the plate, and a groove is provided in the bottom of the recess so as to communicate the recess. The wet polishing apparatus as described.

上記[1]に記載の湿式研磨方法によれば、被加工物を研磨部で研磨する前または後に、被加工物展開ステージの載置トレイ内のエッチャントに浸漬してエッチングすることにより、所定の仕上がり表面粗さを得るための研磨時間を短縮することができる。しかも、前記エッチングは研磨部の前後で待機中の磁気ディスク基板に対して行うから、エッチングのためにスループットは延長されない。従って、研磨時間の短縮によりスループットが短縮される。   According to the wet polishing method described in [1] above, before or after the workpiece is polished by the polishing section, the workpiece is immersed in an etchant in the mounting tray of the workpiece development stage and etched. The polishing time for obtaining the finished surface roughness can be shortened. In addition, since the etching is performed on the magnetic disk substrate waiting before and after the polishing portion, the throughput is not extended due to the etching. Accordingly, the throughput is shortened by shortening the polishing time.

上記[2]に記載の湿式研磨方法によれば、まずエッチングにより表面の酸化皮膜が除去され、その後研磨部で研磨がなされるので、特に研磨時間の短縮に効果がある。   According to the wet polishing method described in [2] above, the oxide film on the surface is first removed by etching, and then the polishing is performed at the polishing portion, which is particularly effective for shortening the polishing time.

上記[3]に記載の湿式研磨方法によれば、研磨の後に仕上げ処理としてエッチングを行うことになり、特に表面平滑性の向上に効果がある。   According to the wet polishing method described in [3] above, etching is performed as a finishing treatment after polishing, which is particularly effective in improving surface smoothness.

上記[4]に記載の湿式研磨方法は、エッチングと研磨の両方を行うものであり高水準の研磨品質が要求される被加工物の研磨に適している。このため、アルミニウム製磁気ディスク基板の研磨に適している。   The wet polishing method according to the above [4] performs both etching and polishing, and is suitable for polishing a workpiece that requires a high level of polishing quality. Therefore, it is suitable for polishing an aluminum magnetic disk substrate.

上記[5]に記載の湿式研磨方法によれば、エッチャントが研磨液に持ち込まれた場合の影響が極めて少ない。   According to the wet polishing method described in [5], the influence when the etchant is brought into the polishing liquid is extremely small.

上記[6]に記載の湿式研磨装置は、上記[1]〜[5]に記載の湿式研磨方法の実施に用いることができる。   The wet polishing apparatus according to [6] can be used for carrying out the wet polishing method according to [1] to [5].

上記[7]に記載の湿式研磨装置は、特に上記[2]に記載の湿式研磨方法の実施に用いることができる。   The wet polishing apparatus according to [7] can be used particularly for carrying out the wet polishing method according to [2].

上記[8]に記載の湿式研磨装は、特に上記[3]に記載の湿式研磨方法の実施に用いることができる。   The wet polishing apparatus described in the above [8] can be used particularly for carrying out the wet polishing method described in the above [3].

上記[9]に記載の湿式研磨装置によれば、上記[1]〜[5]の湿式研磨方法を実施するに際し、被加工物の移載を円滑に行うことができる。   According to the wet polishing apparatus described in [9] above, when the wet polishing method described in [1] to [5] is performed, the workpiece can be transferred smoothly.

上記[10]に記載の湿式研磨装置によれば、上記[1]〜[5]の湿式研磨方法を実施するに際し、複数の被加工物を効率良く移載することができる。   According to the wet polishing apparatus described in [10], a plurality of workpieces can be efficiently transferred when the wet polishing method described in [1] to [5] is performed.

上記[11]に記載の湿式研磨装置によれば、上記[1]〜[5]の湿式研磨方法を実施するに際し、エッチャントに浸される領域が区画化されので、装置やメンテナンスを簡略化できる。   According to the wet polishing apparatus described in [11] above, when the wet polishing method described in [1] to [5] is performed, the region immersed in the etchant is partitioned, so that the apparatus and maintenance can be simplified. .

上記[12]に記載の湿式研磨装置によれば、上記[1]〜[5]の湿式研磨方法を実施するに際し、プレート上の複数の載置トレイの水位調整が容易である。   According to the wet polishing apparatus described in [12] above, it is easy to adjust the water level of the plurality of mounting trays on the plate when performing the wet polishing method described in [1] to [5] above.

図1〜6に、本発明の湿式研磨方法を実施するための湿式研磨装置(1)を例示する。前記湿式研磨装置(1)は、ローダー部(40)、研磨部(10)、アンローダー部(70)を備え、さらに、供給部(60)、洗浄乾燥部(61)および排出部(62)を備えている。前記ローダー部(40)およびアンローダー部(70)は本発明における載置移載部に対応するものである。   1 to 6 illustrate a wet polishing apparatus (1) for carrying out the wet polishing method of the present invention. The wet polishing apparatus (1) includes a loader unit (40), a polishing unit (10), an unloader unit (70), and further includes a supply unit (60), a cleaning and drying unit (61), and a discharge unit (62). It has. The loader section (40) and the unloader section (70) correspond to the placement / transfer section in the present invention.

前記湿式研磨装置(1)は、貫通孔(S1)を有する円板上の磁気ディスク基板(S)の研磨に用いられる装置であり、カセットケース(C)に収納されて搬送されてくる多数の磁気ディスク基板(S)に対して研磨、洗浄、乾燥を順次実施し、再びカセットケース(C)に収納して排出するまでの作業を連続して行う。   The wet polishing apparatus (1) is an apparatus used for polishing a magnetic disk substrate (S) on a disk having a through hole (S1), and is stored in a cassette case (C) and transported. The magnetic disk substrate (S) is polished, washed, and dried in order, and the operations from the storage to the cassette case (C) and the discharge are continuously performed.

前記湿式研磨装置(1)において、研磨部(10)では所定の複数枚の磁気ディスク基板(S)を同時に研磨し、磁気ディスク基板(S)の研磨部(10)への移送および研磨部(10)からの移送は、研磨枚数単位で一括して行ってもよく、このため、ローダー部(40)において、供給部(60)より搬送されてきたカセットケース(C)から磁気ディスク基板(S)を1枚ずつ取り出して、所定枚数を研磨姿勢に展開載置する。また同様に、研磨済みの磁気ディスク基板(S)は研磨部(10)から研磨姿勢のままで一括してアンローダー部(70)に移載され、アンローダー部(70)から1枚ずつ洗浄乾燥部(61)に移送される。洗浄乾燥がなされた磁気ディスク基板(S)はカセットケース(C)に所定枚数が収納され、排出部(62)から装置外に排出される。   In the wet polishing apparatus (1), the polishing unit (10) simultaneously polishes a predetermined plurality of magnetic disk substrates (S), and transfers the magnetic disk substrate (S) to the polishing unit (10) and the polishing unit ( The transfer from 10) may be performed in batches in units of the number of polished sheets. Therefore, in the loader unit (40), the magnetic disk substrate (S) is transferred from the cassette case (C) conveyed from the supply unit (60). ) Are taken out one by one, and a predetermined number of sheets are developed and placed in a polishing posture. Similarly, the polished magnetic disk substrate (S) is collectively transferred from the polishing unit (10) to the unloader unit (70) in the polishing posture, and washed one by one from the unloader unit (70). It is transferred to the drying section (61). A predetermined number of magnetic disk substrates (S) that have been washed and dried are stored in the cassette case (C), and discharged from the discharge section (62) to the outside of the apparatus.

以下に、各部の詳細構成と動作について詳述する。
〔研磨部〕
図2および図3に示すように、前記研磨部(10)は、下定盤(11)、上定盤(15)、太陽歯車(20)、内歯歯車(22)、キャリア(30)等で構成された遊星歯車方式の研磨部を例えば採用することができる。
The detailed configuration and operation of each part will be described in detail below.
[Polishing part]
As shown in FIGS. 2 and 3, the polishing section (10) is composed of a lower surface plate (11), an upper surface plate (15), a sun gear (20), an internal gear (22), a carrier (30), and the like. A configured planetary gear type polishing unit may be employed, for example.

前記下定盤(11)は、円環状の水平な上面を有する円盤部材であり、その上面には研磨布(12a)が貼り付けられている。下定盤(11)の下面は、垂直軸(Q)を中心として回転可能な下部支持部材(13)に固定され、さらに該下部支持部材(13)が下定盤回転駆動部(14)と連係され、下定盤(11)および下部支持部材(13)が回転するものとなされている。   The lower surface plate (11) is a disk member having an annular horizontal upper surface, and a polishing cloth (12a) is attached to the upper surface. The lower surface of the lower surface plate (11) is fixed to a lower support member (13) rotatable about a vertical axis (Q), and the lower support member (13) is linked to the lower surface plate rotation drive unit (14). The lower surface plate (11) and the lower support member (13) are configured to rotate.

前記上定盤(15)もまた、円環状の水平な下面を有する円盤部材であり、前記下定盤(11)と対向する下面に研磨布(12b)が貼り付けられている。上定盤(15)の上面は、垂直軸(Q)を中心として回転可能な上部支持部材(16)に固定され、さらに該上部支持部材(16)が上定盤回転駆動部(17)に連係され、上定盤(15)および上部支持部材(16)が回転するものとなされている。また、前記上定盤(15)および上部支持部材(16)は、垂直軸(Q)に沿って昇降自在に支持されるとともに、図示しない上定盤昇降駆動部の駆動によって昇降するものとなされている。また、前記上定盤(15)には研磨布(12b)を貫通する研磨液供給孔(18)および剥離用流体供給孔(19)が多数穿設されている。   The upper surface plate (15) is also a disk member having an annular horizontal lower surface, and a polishing cloth (12b) is bonded to the lower surface facing the lower surface plate (11). The upper surface of the upper surface plate (15) is fixed to an upper support member (16) that is rotatable about a vertical axis (Q), and the upper support member (16) is attached to the upper surface plate rotation drive unit (17). The upper surface plate (15) and the upper support member (16) are rotated in association with each other. The upper surface plate (15) and the upper support member (16) are supported so as to be movable up and down along the vertical axis (Q) and are moved up and down by driving an upper surface plate lifting and lowering drive unit (not shown). ing. The upper surface plate (15) is provided with a number of polishing liquid supply holes (18) and peeling fluid supply holes (19) penetrating the polishing pad (12b).

前記太陽歯車(20)は、研磨部(10)の中央位置に回転可能に設けられており、太陽歯車回転駆動部(21)の駆動により垂直軸(Q)を中心として回転するものとなされている。ただし、内歯歯車(22)を回転動作させる場合は、太陽歯車(20)を回転不能に固定してもよい。前記太陽歯車(20)としては、側面部に歯列が一体形成された平歯車やピン歯車等が用いられる。   The sun gear (20) is rotatably provided at the center position of the polishing section (10), and is rotated about the vertical axis (Q) by driving the sun gear rotation driving section (21). Yes. However, when rotating the internal gear (22), the sun gear (20) may be fixed so as not to rotate. As the sun gear (20), a spur gear, a pin gear, or the like in which a tooth row is integrally formed on a side surface portion is used.

前記内歯歯車(22)は、内周側に歯列を有するリング状の歯車であり、前記太陽歯車(20)の外方に同心円状に配置されている。本実施形態の内歯歯車(22)は、回転不能に固定されているが、内歯歯車回転駆動部を追加設置して垂直軸(Q)を中心に回転可能としても良い。また、内歯歯車(22)においても、平歯車のほか、ピン歯車等を用いてもよい。   The internal gear (22) is a ring-shaped gear having a tooth row on the inner peripheral side, and is arranged concentrically on the outer side of the sun gear (20). The internal gear (22) of the present embodiment is fixed so as not to rotate, but an internal gear rotation drive unit may be additionally installed to be rotatable about the vertical axis (Q). Also, in the internal gear (22), a pin gear or the like may be used in addition to the spur gear.

前記キャリア(30)は、外周部に歯列を有する薄板状の円盤部材であり、被加工物(S)を装填し保持するための保持孔(31)が複数個形成されている。研磨部(10)には、複数個のキャリア(30)が配置され、これらのキャリア(30)は、太陽歯車(20)および内歯歯車(22)に噛み合い、太陽歯車(20)および/または内歯歯車(22)の回転に応じて、太陽歯車(20)の周囲を公転しつつ自転する。   The carrier (30) is a thin plate-like disk member having a tooth row on the outer periphery, and a plurality of holding holes (31) for loading and holding the workpiece (S) are formed. In the polishing section (10), a plurality of carriers (30) are arranged. These carriers (30) mesh with the sun gear (20) and the internal gear (22), and the sun gear (20) and / or According to the rotation of the internal gear (22), it rotates while revolving around the sun gear (20).

前記研磨部(10)において、キャリア(30)に保持された被加工物(S)を上定盤(15)および下定盤(11)で挟持し、この状態でキャリア(30)を公転および自転させることにより、被加工物(S)の上下両面が研磨加工される。この研磨部(10)では、太陽歯車(20)と内歯歯車(22)との間で、かつ上定盤(15)と下定盤(11)とに挟まれるドーナツ状の領域が実際の研磨領域となる。   In the polishing section (10), the workpiece (S) held by the carrier (30) is sandwiched between the upper surface plate (15) and the lower surface plate (11), and the carrier (30) is rotated and rotated in this state. By doing so, the upper and lower surfaces of the workpiece (S) are polished. In this polishing section (10), a donut-shaped region sandwiched between the sun gear (20) and the internal gear (22) and between the upper surface plate (15) and the lower surface plate (11) is actually polished. It becomes an area.

また、前記上定盤(15)の上方に研磨液供給装置(34)が設けられている。前記研磨液供給装置(34)は、樋状本体(35)、この樋状本体(35)に研磨液およびリンス液を導入するノズル(36)(37)、研磨液およびリンス液を貯蔵するタンク(図示省略)、これらのタンクと前記ノズル(36)(37)とを連通接続するチューブ(図示省略)、前記樋状本体(35)に連通接続され研磨部(10)に研磨液を供給するチューブ(38)等を備える。前記チューブ(38)は上定盤(15)の研磨液供給孔(18)に連通接続されている。また、符号(39)は上定盤(15)に張りついた被加工物(S)を剥がすための剥離用流体を導入するチューブである。   A polishing liquid supply device (34) is provided above the upper surface plate (15). The polishing liquid supply device (34) includes a bowl-shaped main body (35), nozzles (36) and (37) for introducing the polishing liquid and the rinse liquid into the bowl-shaped main body (35), and a tank for storing the polishing liquid and the rinse liquid. (Not shown), a tube (not shown) for connecting these tanks and the nozzles (36), (37) in communication, and a tank-shaped body (35) connected to supply the polishing liquid to the polishing section (10). A tube (38) is provided. The tube (38) is connected in communication with the polishing liquid supply hole (18) of the upper surface plate (15). Reference numeral (39) denotes a tube for introducing a peeling fluid for peeling the workpiece (S) stuck to the upper surface plate (15).

なお、本実施形態において、キャリア(30)の数は8個の例を示すものであり、各キャリア(30)は5個の保持孔(31)を有している。   In the present embodiment, the number of carriers (30) is eight, and each carrier (30) has five holding holes (31).

〔ローダー部〕
例えば、図2に示すように、ローダー部(40)は前記研磨部(10)の前段に配置され、台(図示省略)上に回転可能に設置された円形のテーブル(41)とこのテーブル(41)の上方に配置された移載装置(50)とを有している。前記テーブル(41)は、本発明における被加工物展開ステージに対応する。
[Loader section]
For example, as shown in FIG. 2, the loader section (40) is arranged in front of the polishing section (10), and a circular table (41) rotatably installed on a table (not shown) and the table ( 41) and a transfer device (50) disposed above. The table (41) corresponds to the workpiece development stage in the present invention.

前記テーブル(41)上には、前記研磨部(10)のキャリア(30)と同数のプレート(42)がキャリア(30)と同じ配置で取り付けられている。図4および図6に示すように、各プレート(42)は、キャリア(30)の保持孔(31)に対応する位置に有底の円形凹部(43)が設けられ、底部に設けられた溝(44)によって互いに連通している。そして、これらの凹部(43)にリング形の樹脂製載置トレイ(45)を面一に嵌め込むことによって有底の凹陥部が形成され、エッチャント(W)を貯留するものとなされている。前記載置トレイ(45)の内周部は凹陥状に刳られて段部(45a)が形成され、このリング状の段部(45a)で磁気ディスク基板(S)の下面外縁部が支持される。また、前記プレート(42)上面の周縁にはエッチャント(W)を堰き止める堤(46)が設けられている。そして、前記テーブル(41)の中心部から放射状に設けられた給液管(47)からプレート(42)上にエッチャント(W)を供給すると、載置トレイ(45)に流入し溝(44)を通じて全ての載置トレイ(45)内に供給され、一定の水位となる。このように、凹部(43)を連通させることにより、複数の載置トレイ(45)の水位調整を簡単に行うことができる。なお、前記載置トレイ(45)内のエッチャント(W)の排出は、プレート(42)からのオーバーフロー、あるいはテーブル溝(44)の底に排水口を設けること等により適宜行うことができる。   On the table (41), the same number of plates (42) as the carrier (30) of the polishing section (10) are attached in the same arrangement as the carrier (30). As shown in FIGS. 4 and 6, each plate (42) has a bottomed circular recess (43) at a position corresponding to the holding hole (31) of the carrier (30), and a groove provided at the bottom. (44) communicate with each other. Then, by fitting the ring-shaped resin mounting tray (45) into the recesses (43) flush with each other, a bottomed recess is formed, and the etchant (W) is stored. The inner peripheral portion of the mounting tray (45) is rolled into a concave shape to form a step portion (45a), and this ring-shaped step portion (45a) supports the outer edge of the lower surface of the magnetic disk substrate (S). The Further, a bank (46) for damming the etchant (W) is provided at the periphery of the upper surface of the plate (42). Then, when the etchant (W) is supplied onto the plate (42) from the liquid supply pipe (47) provided radially from the center of the table (41), it flows into the mounting tray (45) and flows into the groove (44). And is supplied to all the loading trays (45) through the water level. In this way, the water level of the plurality of loading trays (45) can be easily adjusted by communicating the recesses (43). The discharge of the etchant (W) in the placing tray (45) can be appropriately performed by overflowing from the plate (42) or by providing a drain outlet at the bottom of the table groove (44).

移載装置(50)は、図2および図5に示すように、可動基板(51)が前記テーブル(41)と研磨部(10)の下定盤(11)との間を水平に移動するとともに昇降可能となされ、この可動基板(51)の下面に前記プレート(42)と同数の把持ユニット(52)がプレート(42)の対応位置に取り付けられている。前記把持ユニット(52)は、円形の取付板(53)にプレート(42)内の載置トレイ(45)と同数の把持部(54)を取り付け、前記取付板(53)を取付軸(55)で可動基板(51)に取り付けたものである。各把持部(54)は、エアの給排等によって開閉する樹脂製の一対の爪(56)(56)を有し、これらの爪(56)の外面に磁気ディスク基板(S)の貫通孔(S1)の周端面を把持する溝(57)が形成されている(図6参照)。また、各把持部(54)の取付位置は前記プレート(42)上の載置トレイ(45)に対応している。   As shown in FIGS. 2 and 5, the transfer device (50) moves the movable substrate (51) horizontally between the table (41) and the lower surface plate (11) of the polishing unit (10). The movable substrate (51) can be moved up and down, and the same number of gripping units (52) as the plate (42) are attached to corresponding positions of the plate (42) on the lower surface of the movable substrate (51). The gripping unit (52) attaches the same number of gripping portions (54) as the mounting tray (45) in the plate (42) to a circular mounting plate (53), and attaches the mounting plate (53) to a mounting shaft (55). ) Attached to the movable substrate (51). Each gripping portion (54) has a pair of resin-made claws (56) (56) that can be opened and closed by air supply and discharge, etc., and the through-holes of the magnetic disk substrate (S) are formed on the outer surfaces of these claws (56). A groove (57) for gripping the peripheral end face of (S1) is formed (see FIG. 6). The attachment position of each gripping part (54) corresponds to the mounting tray (45) on the plate (42).

〔アンローダー部〕
アンローダー部(70)は前記研磨部(10)の後段に配置され、台(図示省略)上に回転可能に設置された円形のテーブル(71)とこのテーブル(71)の上方に配置された移載装置(80)とを有する。前記テーブル(71)は本発明における被加工物展開ステージに対応する。
[Unloader section]
The unloader unit (70) is disposed at the rear stage of the polishing unit (10), and is disposed above the table (71) and a circular table (71) rotatably installed on a table (not shown). And a transfer device (80). The table (71) corresponds to the workpiece development stage in the present invention.

前記テーブル(71)および移載装置(80)は、ローダー部(40)のテーブル(41)および移載装置(50)とは各部が左右対称に配置されていることを除いて同一構成であり、同一名称は同一機能を有するものとして説明を省略し、ローダー(40)部と区別するために符号のみを変えて記載する。即ち、(72)はプレート、(73)は凹部、(74)は溝、(75)は載置トレイ、(75a)は段部、(76)は堤、(77)は給液管である。また、(81)は可動基板、(82)は把持ユニット、(83)は円形の取付板、(84)は把持部、(85)は取付軸、(86)(86)は一対の爪、(87)は溝である。   The table (71) and the transfer device (80) have the same configuration as the table (41) and the transfer device (50) of the loader unit (40) except that the respective parts are arranged symmetrically. The description of the same name is omitted because it has the same function, and only the symbol is changed to distinguish it from the loader (40). That is, (72) is a plate, (73) is a recess, (74) is a groove, (75) is a loading tray, (75a) is a step, (76) is a bank, and (77) is a supply pipe. . (81) is a movable substrate, (82) is a gripping unit, (83) is a circular mounting plate, (84) is a gripping part, (85) is a mounting shaft, (86) (86) is a pair of claws, (87) is a groove.

上述した湿式研磨装置(1)において、研磨部(10)で用いる研磨液および載置トレイ(45)(75)に貯留するエッチャントは限定されず、被加工物の材質や求める表面粗さ等に応じて適宜選定すればよい。   In the above-described wet polishing apparatus (1), the polishing liquid used in the polishing section (10) and the etchant stored in the mounting trays (45) and (75) are not limited, and the material to be processed, the required surface roughness, etc. What is necessary is just to select suitably according to.

研磨液としては、水や酸等の分散媒にコロイダルシリカやアルミナを分散させた懸濁液を例示できる。従って、研磨部(10)においては機械研磨、または化学機械研磨が行われる。 エッチャントとしては、シュウ酸やクエン酸等の無機酸あるいは有機酸を1種を単独または2種以上の混合物を水等の溶媒で適宜希釈してpH1.3〜2.8程度に調整したものを例示できる。また、エッチャントとして、研磨部(10)で用いる研磨液の分散媒をそのまま、あるいはこの分散媒の濃縮液または希釈液を用いることもできる。研磨液の分散媒を用いれば、磁気ディスク基板(S)の移載時にエッチャントが研磨液に持ち込まれたとしても砥粒濃度が希釈されるだけであるから、研磨液のコンタミネーション等の影響がないか、あるいは極めて少ない。なお、ローダー部(40)とアンローダ部(70)のエッチャントは同じものであって良いし、異なるものであっても良い。   Examples of the polishing liquid include a suspension obtained by dispersing colloidal silica or alumina in a dispersion medium such as water or acid. Accordingly, mechanical polishing or chemical mechanical polishing is performed in the polishing section (10). As an etchant, an inorganic acid or an organic acid such as oxalic acid or citric acid is used alone or a mixture of two or more thereof is appropriately diluted with a solvent such as water to adjust the pH to about 1.3 to 2.8. It can be illustrated. Further, as the etchant, the dispersion medium of the polishing liquid used in the polishing section (10) can be used as it is, or a concentrated liquid or dilution liquid of this dispersion medium can be used. If a dispersion medium of the polishing liquid is used, even if the etchant is brought into the polishing liquid when the magnetic disk substrate (S) is transferred, only the abrasive concentration is diluted. Therefore, there is an influence of contamination of the polishing liquid. No or very little. The etchant of the loader unit (40) and the unloader unit (70) may be the same or different.

〔作業工程〕
上述した湿式研磨装置(1)において、磁気ディスク基板(S)が各部を移送される間に、下記(i)〜(ix)の順序で研磨、洗浄、乾燥が連続して行われる。
〔Working process〕
In the above-described wet polishing apparatus (1), while the magnetic disk substrate (S) is transferred through each part, polishing, cleaning and drying are successively performed in the following order (i) to (ix).

連続処理の準備として、ローダー部(40)の給液管(47)およびアンローダー部(70)の給液管(77)からエッチャント(W)を供給し、載置トレイ(45)(75)内に貯留しておく。   As preparation for continuous processing, the etchant (W) is supplied from the liquid supply pipe (47) of the loader section (40) and the liquid supply pipe (77) of the unloader section (70), and the mounting tray (45) (75) Store in.

(i)供給部(60)のコンベアにより、カセットケース(C)がローダー部(40)のテーブル(41)の側方に搬送される。   (I) The cassette case (C) is conveyed to the side of the table (41) of the loader section (40) by the conveyor of the supply section (60).

(ii)カセットケース(C)内の磁気ディスク基板(S)を1枚ずつ取り出してテーブル(41)に移送し、研磨面が水平になるように載置トレイ(45)上に載置する。テーブル(41)を適宜回転させながら上記移送作業を行い、全ての載置トレイ(45)に磁気ディスク基板(S)を展開載置する。載置トレイ(45)にはエッチャント(W)が貯留されているので、磁気ディスク基板(S)は液中に没した状態である(図6参照)。磁気ディスク基板(S)がエッチャント(W)に浸漬している間にエッチングが行われ、表面の金属酸化膜が除去される。   (Ii) The magnetic disk substrates (S) in the cassette case (C) are taken out one by one, transferred to the table (41), and placed on the placement tray (45) so that the polishing surface is horizontal. The above transfer operation is performed while appropriately rotating the table (41), and the magnetic disk substrates (S) are developed and mounted on all the mounting trays (45). Since the etchant (W) is stored in the mounting tray (45), the magnetic disk substrate (S) is immersed in the liquid (see FIG. 6). Etching is performed while the magnetic disk substrate (S) is immersed in the etchant (W), and the metal oxide film on the surface is removed.

(iii)ローダー部(40)の移載装置(50)をテーブル(41)の直上に移動させ、続いて可動基板(51)を下降させる。各把持部(54)の爪(56)(56)を磁気ディスク基板(S)の貫通孔(S1)に挿入した後に開き、溝(57)で貫通孔(S1)の周端面を把持する(図6参照)。前記把持部(54)は全ての載置トレイ(45)に対応して設けられているので、全ての磁気ディスク基板(S)が同時に把持される。   (Iii) The transfer device (50) of the loader unit (40) is moved directly above the table (41), and then the movable substrate (51) is lowered. The claws (56) (56) of each gripping part (54) are opened after being inserted into the through hole (S1) of the magnetic disk substrate (S), and the peripheral end surface of the through hole (S1) is gripped by the groove (57) ( (See FIG. 6). Since the gripping portion (54) is provided corresponding to all the mounting trays (45), all the magnetic disk substrates (S) are gripped simultaneously.

(iv)前記可動基板(51)を上昇させて研磨部(10)の下定盤(11)の直上に移動させる。続いて可動基板(51)を下降させ、キャリア(30)の保持孔(31)内に磁気ディスク基板(S)を装填する。そして、把持部(54)の爪(56)(56)を閉じてから可動基板(51)を上昇させて、水平移動させてローダー部(40)に戻す。これにより、所定枚数の磁気ディスク基板(S)がローダー部(40)から研磨部(10)に一括して移載される。   (Iv) The movable substrate (51) is raised and moved directly above the lower surface plate (11) of the polishing section (10). Subsequently, the movable substrate (51) is lowered, and the magnetic disk substrate (S) is loaded into the holding hole (31) of the carrier (30). Then, after closing the claws (56) and (56) of the gripping part (54), the movable substrate (51) is lifted and horizontally moved back to the loader part (40). As a result, a predetermined number of magnetic disk substrates (S) are collectively transferred from the loader unit (40) to the polishing unit (10).

(v)研磨部(10)において、上定盤(15)を下降させてキャリア(30)に装填された磁気ディスク基板(S)を挟持し、研磨液供給装置(34)から研磨液を供給しつつ磁気ディスク基板(S)の両面を研磨する。研磨終了後、上定盤(15)を上昇させる。   (V) In the polishing section (10), the upper surface plate (15) is lowered to sandwich the magnetic disk substrate (S) loaded in the carrier (30), and the polishing liquid is supplied from the polishing liquid supply device (34). At the same time, both surfaces of the magnetic disk substrate (S) are polished. After polishing, the upper surface plate (15) is raised.

(vi)アンローダー部(70)の移載装置(80)の可動基板(81)を下定盤(11)の直上に移動させ、続いて下降させる。各把持部(84)の爪(86)(86)を磁気ディスク基板(S)の貫通孔(S1)に挿入した後に開き、溝(87)で貫通孔(S1)の周端面を把持する。前記把持部(84)は全ての磁気ディスク基板(S)に対応して設けられているので、全ての磁気ディスク基板(S)が同時に把持される。   (Vi) The movable substrate (81) of the transfer device (80) of the unloader section (70) is moved immediately above the lower surface plate (11) and then lowered. The claws (86) and (86) of each gripping part (84) are opened after being inserted into the through hole (S1) of the magnetic disk substrate (S), and the peripheral end face of the through hole (S1) is gripped by the groove (87). Since the holding portion (84) is provided corresponding to all the magnetic disk substrates (S), all the magnetic disk substrates (S) are simultaneously held.

(vii)前記可動基板(81)を上昇させてアンローダー部(70)のテーブル(71)の直上に移動させ、続いて可動基板(81)を下降させる。載置トレイ(75)上に磁気ディスク基板(S)を載置したら、把持部(84)の爪(86)(86)を閉じて把持を解除して可動基板(81)を上昇させる。これにより、所定枚数の磁気ディスク基板(S)が研磨部(10)からアンローダー部(70)に一括して移載され、かつ研磨済みの磁気ディスク基板(S)はエッチャント(W)に浸漬されてエッチングがなされる。   (Vii) The movable substrate (81) is raised and moved directly above the table (71) of the unloader section (70), and then the movable substrate (81) is lowered. When the magnetic disk substrate (S) is placed on the placement tray (75), the claws (86) and (86) of the grip portion (84) are closed to release the grip, and the movable substrate (81) is raised. As a result, a predetermined number of magnetic disk substrates (S) are collectively transferred from the polishing section (10) to the unloader section (70), and the polished magnetic disk substrates (S) are immersed in the etchant (W). Then, etching is performed.

(viii)アンローダー部(70)に載置された磁気ディスク基板(S)を1枚ずつ洗浄乾燥部(61)に移送し、洗浄および乾燥を行う。乾燥を終えた磁気ディスク基板(S)は移送してカセットケース(C)内に収納し、排出部(62)の排出コンベアで装置外に排出する。   (Viii) The magnetic disk substrates (S) placed on the unloader unit (70) are transferred one by one to the cleaning / drying unit (61) to perform cleaning and drying. The dried magnetic disk substrate (S) is transferred, stored in the cassette case (C), and discharged out of the apparatus by the discharge conveyor of the discharge section (62).

(ix)(i)〜(viii)のサイクルを繰り返し行う。   (Ix) The cycle of (i) to (viii) is repeated.

上記サイクルにおいて、(iv)の工程後はローダー部(40)の載置トレイ(45)が空になり、研磨部(10)での研磨が終わってキャリア(30)の保持孔(31)が空くまでの間はローダー部(40)が待機状態となる。この待機中に、(ii)の工程を実施し、次サイクルの磁気ディスク基板(S)をローダー部(40)に移送して載置トレイ(45)上に載置し、エッチャント(W)に浸漬してエッチングを行う。即ち、ローダー部(40)の載置トレイ(45)は、研磨部(10)のキャリア(30)の保持孔(31)が空くまでの間が待機時間となるので、この待機時間を利用してエッチングを行う。このエッチングにより表面の酸化皮膜が除去されるので、研磨部(10)では所定の仕上がり表面粗さを得るための研磨時間を短縮することができる。ひいては、所定の仕上がり表面粗さを得るためのスループットを短縮することができる。   In the above cycle, after the step (iv), the loading tray (45) of the loader unit (40) is emptied, the polishing in the polishing unit (10) is finished, and the holding hole (31) of the carrier (30) is opened. The loader unit (40) is in a standby state until it becomes empty. During this standby, the step (ii) is carried out, and the magnetic disk substrate (S) of the next cycle is transferred to the loader unit (40) and placed on the placement tray (45), and the etchant (W) is placed. Immerse and etch. In other words, the loading tray (45) of the loader unit (40) has a waiting time until the holding hole (31) of the carrier (30) of the polishing unit (10) is empty. Etching is performed. Since the oxide film on the surface is removed by this etching, the polishing time for obtaining a predetermined finished surface roughness can be shortened in the polishing portion (10). As a result, the throughput for obtaining a predetermined finished surface roughness can be shortened.

エッチング時間即ち浸漬時間を前記待機時間よりも短くする場合は、磁気ディスク基板(S)をカセットケース(C)からローダー部(40)に移送するタイミングを遅らせればよい。逆に、エッチングに必要な時間が前記待機時間よりも長い場合であっても、待機時間内の浸漬によって相応の上記効果を奏することができる。勿論、エッチング時間を長くするために、ローダー部(40)から研磨部(10)への移載を遅らせることも、エッチング時間を短縮させるために、組成や温度等のエッチャント側の条件を変更することも任意に行うことができる。所期する表面粗さを得るに際して、ローダー部(40)から研磨部(10)への移載を遅らせた場合でも、エッチングと研磨とを合わせてスループットを短縮できれば本発明の効果を奏することができる。   In order to make the etching time, ie, the immersion time shorter than the waiting time, the timing for transferring the magnetic disk substrate (S) from the cassette case (C) to the loader unit (40) may be delayed. On the other hand, even when the time required for etching is longer than the waiting time, the above-described effects can be achieved by immersion within the waiting time. Of course, in order to lengthen the etching time, the transfer from the loader section (40) to the polishing section (10) can be delayed, or the etchant side conditions such as composition and temperature can be changed to shorten the etching time. It can also be done arbitrarily. Even when the transfer from the loader unit (40) to the polishing unit (10) is delayed in obtaining the desired surface roughness, the effects of the present invention can be achieved if the throughput can be shortened by combining etching and polishing. it can.

また、アンローダー部(70)においても、次サイクルの研磨が終了しなければ研磨部(10)から磁気ディスク基板(S)が移載されてくることはなく、この間が待機時間となる。研磨部(10)から移載されてくる磁気ディスク基板(S)が無ければ、早々に洗浄乾燥部(61)に移送しても研磨が律速段階となってスループットは短縮されないので、この待機時間を利用してエッチングを行うことができる。このエッチングにより、研磨部(10)で研磨がなされた磁気ディスク基板(S)の仕上げ処理がなされ、表面平滑性を向上させることができる。あるいは、所定の仕上がり表面粗さを得るために必要な研磨時間を短縮することができる。   Also, in the unloader unit (70), if the polishing of the next cycle is not completed, the magnetic disk substrate (S) is not transferred from the polishing unit (10), and this time is a waiting time. If there is no magnetic disk substrate (S) transferred from the polishing unit (10), even if it is quickly transferred to the cleaning / drying unit (61), the polishing becomes the rate-determining step and the throughput is not shortened. Etching can be performed using By this etching, the finishing process of the magnetic disk substrate (S) polished by the polishing section (10) is performed, and the surface smoothness can be improved. Alternatively, the polishing time necessary to obtain a predetermined finished surface roughness can be shortened.

また、上述した湿式研磨装置においては、ローダー部(40)およびアンローダー部(70)において移載装置(50)(80)の把持部(54)(84)が載置トレイ(45)(75)内の磁気ディスク基板(S)を把持する際に爪(56)(86)がエッチャント(W)に浸かることになる。このため、研磨部(10)で付着した研磨液がエッチャント(W)で洗われ、研磨液が乾燥して硬い塊となって磁気ディスク基板(S)を傷つけることを未然に防ぐことができる。   Further, in the wet polishing apparatus described above, the gripping parts (54) and (84) of the transfer apparatuses (50) and (80) in the loader part (40) and the unloader part (70) are mounted on the mounting trays (45) and (75). When the magnetic disk substrate (S) is held, the claws (56) (86) are immersed in the etchant (W). For this reason, it is possible to prevent the polishing liquid adhering at the polishing section (10) from being washed with the etchant (W) and drying the polishing liquid into a hard lump and damaging the magnetic disk substrate (S).

本発明の湿式研磨方法および湿式研磨装置によれば、被加工物を研磨部に装填するまでの待機時間、あるいは研磨済みの被加工物を次工程に進めるまでの待機時間を利用してエッチングを行うことができ、所期する表面粗さを得るためのスループットを短縮することができる。このようなエッチングと研磨とを組み合わせた研磨方法は、高水準の研磨品質が要求される被加工物の研磨に適している。かかる被加工物として、アルミニウムまたはアルミニウム合金板からなる磁気ディスク基板、ガラス基板あるいは前記基板の表面にNi−Pめっき皮膜を有する磁気ディスク基板を挙示できる。   According to the wet polishing method and the wet polishing apparatus of the present invention, etching is performed using the waiting time until the workpiece is loaded in the polishing section, or the waiting time until the polished workpiece is advanced to the next process. And can reduce the throughput to obtain the desired surface roughness. A polishing method in which such etching and polishing are combined is suitable for polishing a workpiece that requires a high level of polishing quality. Examples of the workpiece include a magnetic disk substrate made of aluminum or an aluminum alloy plate, a glass substrate, or a magnetic disk substrate having a Ni-P plating film on the surface of the substrate.

また、前記湿式研磨装置は、被加工物を載置するトレイにエッチャントを貯留するための凹陥部を設けるだけで上述した湿式研磨方法を実施することができる。このため、被加工物を載置トレイに展開して待機させる研磨装置であれば、エッチング装置を新設する必要がなく、載置トレイの変更とエッチャントの給排設備の追加のみで容易に実施することができる。しかも、実質的な工程変更は研磨時間の短縮のみであるから、制御プログラムの変更も僅かである。   Further, the wet polishing apparatus can carry out the above-described wet polishing method only by providing a recess for storing an etchant on a tray on which a workpiece is placed. For this reason, if it is a polishing apparatus that develops a workpiece on the mounting tray and stands by, it is not necessary to newly install an etching apparatus, and it is easily performed only by changing the mounting tray and adding an etchant supply / discharge facility. be able to. Moreover, since the substantial process change is only shortening the polishing time, the control program is also slightly changed.

本発明の湿式研磨装置は上記実施形態に限定されるものではない。   The wet polishing apparatus of the present invention is not limited to the above embodiment.

本発明において、エッチャントを貯留する載置トレイを有する被加工物展開ステージは研磨部の前段または後段の少なくとも一方に設置されていれば良い。即ち、前段の装填用ステージまたは後段の排出用ステージの少なくとも一方にエッチャントを貯留できる載置トレイを備えていれば良く、いずれか一方のみでエッチングを行う場合も本発明に含まれる。一方のみのエッチングであっても相応の効果は得られ、スループットを短縮することができる。また、装填用ステージと排出用ステージとで組成の異なるエッチャントを用いることもできる。   In the present invention, the workpiece development stage having the mounting tray for storing the etchant may be provided at least one of the front stage and the rear stage of the polishing unit. That is, it is only necessary to provide a mounting tray capable of storing an etchant in at least one of the preceding loading stage and the subsequent discharging stage, and the present invention includes a case where etching is performed with only one of them. Even with only one etching, a corresponding effect can be obtained and the throughput can be shortened. Further, etchants having different compositions can be used for the loading stage and the discharging stage.

また、被加工物展開ステージと研磨部との間の被加工物の移載手段も限定されない。   Moreover, the transfer means of the workpiece between the workpiece development stage and the polishing section is not limited.

また、研磨部の構成も上記実施形態の太陽歯車および内歯歯車を組み合わせてキャリアを自転および公転させるものに限定されず、任意の摺動手段を組み込むことができる。さらに、載置移載部(上記実施形態におけるローダー部およびアンローダー部)以外の装置構成、被加工物を載置移載部(ローダー部)に移送する方法や載置移載部(アンローダー部)から次工程に移送する方法も限定されない。   Further, the configuration of the polishing unit is not limited to the combination of the sun gear and the internal gear of the embodiment described above to rotate and revolve the carrier, and any sliding means can be incorporated. Further, the apparatus configuration other than the loading / unloading unit (loader unit and unloader unit in the above embodiment), a method for transferring the workpiece to the loading / unloading unit (loader unit), and the loading / unloading unit (unloader). The method of transferring from (part) to the next process is not limited.

被加工物展開ステージの載置トレイは少なくとも1個あればよく、載置トレイ数がキャリアの保持孔の総数と一致していない場合も本発明に含まれる。但し、キャリアの保持孔と同数の載置トレイを設けることによって一括移載が可能となり作業効率が上がる。また、本実施形態ではキャリアに対応するプレートを用いて載置トレイをグループ化しているが、本発明はプレートを用いたグループ化に限定するものではない。載置トレイのグループ化により、エッチャントに浸される領域が区画化され、載置トレイ毎の供給あるいは全載置トレイへの一括供給よりも装置を簡略化でき、メンテナンスもし易くなる。また、載置トレイとプレートとが一体化された構成やプレート上の載置トレイが連通することなく独立する構成も本発明に含まれる。さらに、エッチャントの供給方法も何ら限定されない。   It is sufficient that there is at least one mounting tray for the workpiece development stage, and the case where the number of mounting trays does not match the total number of holding holes of the carrier is also included in the present invention. However, by providing the same number of mounting trays as the carrier holding holes, batch transfer is possible and work efficiency is improved. In this embodiment, the mounting trays are grouped using plates corresponding to the carriers, but the present invention is not limited to grouping using plates. By grouping the mounting trays, an area immersed in the etchant is partitioned, and the apparatus can be simplified and maintenance can be performed more easily than supply for each mounting tray or batch supply to all mounting trays. In addition, a configuration in which the mounting tray and the plate are integrated and a configuration in which the mounting tray on the plate is independent without being communicated are also included in the present invention. Further, the method of supplying the etchant is not limited at all.

図1〜6の本発明の一例である湿式研磨装置(1)を用いて被加工物(S)の研磨試験を行った。   A polishing test of the workpiece (S) was performed using the wet polishing apparatus (1) which is an example of the present invention shown in FIGS.

試験用の被加工物(S)として、両面にNi−Pめっき皮膜を有する直径95mmのアルミニウム板を用いた。このアルミニウムめっき板は磁気ディスク基板として用いられるものである。研磨液はコロイダルシリカを純水に分散させたものを用い、リンス液として純水を用いた。   As a test workpiece (S), an aluminum plate having a diameter of 95 mm having Ni-P plating films on both sides was used. This aluminum plated plate is used as a magnetic disk substrate. The polishing liquid used was a dispersion of colloidal silica in pure water, and pure water was used as the rinse liquid.

本発明の実施例として、ローダー部(40)およびアンローダー部(70)の載置トレイ(45)(75)にエッチャント(W)を貯留し、研磨の前後にエッチングを行った。ローダー部(40)で用いたエッチャントは硝酸系エッチャント液であり、アンローダー部(70)で用いたエッチャントはHEDP(ヒドロキシエタンジホスホン酸)系エッチャント液である。   As an example of the present invention, the etchant (W) was stored in the mounting trays (45) and (75) of the loader unit (40) and the unloader unit (70), and etching was performed before and after polishing. The etchant used in the loader unit (40) is a nitric acid-based etchant solution, and the etchant used in the unloader unit (70) is a HEDP (hydroxyethane diphosphonic acid) -based etchant solution.

一方、比較例として、前記湿式研磨装置(1)のローダー部(40)およびアンローダー部(70)の載置トレイ(45)(75)にはエッチャントを貯留せず、ローダー部(40)およびアンローダー部(70)を、単に、研磨部(10)に装填する磁気ディスク基板(S)を待機させておく装填用ステージ、あるいは洗浄乾燥部(61)に移送するまで磁気ディスク基板(S)を待機させておく排出用ステージとして利用した。   On the other hand, as a comparative example, the loader unit (40) of the wet polishing apparatus (1) and the loading trays (45) and (75) of the unloader unit (70) do not store the etchant, and the loader unit (40) and Magnetic disk substrate (S) until unloader unit (70) is simply transferred to a stage for loading magnetic disk substrate (S) to be loaded into polishing unit (10) or to cleaning and drying unit (61) It was used as a discharge stage that kept waiting.

そして、40枚(キャリア数8個、保持孔数5個)の被加工物(S)を1単位とし、ローダー部(40)から研磨部(10)への移載、研磨部(10)からアンローダー部(70)への移載を単位毎に一括して行い、さらに洗浄乾燥させた。この研磨への移載から洗浄乾燥までを1サイクルとして反復し、各条件につき10000枚のアルミニウムめっき板の両面を研磨した。   Then, 40 workpieces (8 carriers, 5 holding holes) are processed as one unit, transfer from the loader unit (40) to the polishing unit (10), and from the polishing unit (10). The transfer to the unloader part (70) was performed in batches for each unit, and further washed and dried. This transfer from polishing to washing and drying was repeated as one cycle, and both surfaces of 10,000 aluminum plated plates were polished for each condition.

この研磨サイクルにおいて、実施例における磁気ディスク基板(S)は、ローダー部(40)でエッチングされ、研磨部(10)で研磨された後、アンローダー部(70)においてもエッチングされる。一方、比較例における磁気ディスク基板(S)は、研磨部(10)で研磨されるのみでローダー部(40)およびアンローダー部(70)では何ら処理されない。   In this polishing cycle, the magnetic disk substrate (S) in the embodiment is etched by the loader unit (40), polished by the polishing unit (10), and then also etched by the unloader unit (70). On the other hand, the magnetic disk substrate (S) in the comparative example is only polished by the polishing section (10) and is not processed at all by the loader section (40) and the unloader section (70).

〔試験1〕
上記研磨サイクルにおいて、目標の仕上がり表面粗さ(Ra)を0.6nmに設定した。この目標の表面粗さ(Ra)が達成されるように、研磨部(10)における研磨時間および研磨量を設定した。実施例では研磨の前後で行われるエッチングを考慮して研磨部(10)の研磨時間を設定した。設定した研磨時間および研磨量を表1に示す。
[Test 1]
In the polishing cycle, the target finished surface roughness (Ra) was set to 0.6 nm. The polishing time and the polishing amount in the polishing section (10) were set so that this target surface roughness (Ra) was achieved. In the examples, the polishing time of the polishing portion (10) was set in consideration of etching performed before and after polishing. Table 1 shows the set polishing time and polishing amount.

そして、磁気ディスク基板(S)がローダー部(40)から研磨部(10)に移載されてローダー部(40)が待機状態になれば直ちに次サイクルの磁気ディスク基板(S)を順次ローダー部(40)の載置トレイ(45)に移送し、研磨部(10)に移載可能となるまでの間を載置トレイ(45)内で待機させた。同じくアンローダー部(70)においても、研磨部(10)での研磨終了後直ちにアンローダー部(70)に移載し、洗浄乾燥部(61)への移送可能となるまでの間を載置トレイ(75)内で待機させた。この研磨サイクルにおいて、実施例のローダー部(40)およびアンローダー部(70)におけるエッチャントへの浸漬時間は表1に示す時間となった。前記浸漬時間は、ローダー部(10)においては最後にカセットケース(C)から載置トレイ(45)に移送した磁気ディスク基板(S)の浸漬時間であり、アンローダー部(70)においては最初に載置トレイ(75)から洗浄乾燥部(61)に移送した磁気ディスク基板(S)の浸漬時間である。   When the magnetic disk substrate (S) is transferred from the loader unit (40) to the polishing unit (10) and the loader unit (40) is in a standby state, the magnetic disk substrates (S) of the next cycle are sequentially loaded into the loader unit. It was transferred to the mounting tray (45) of (40) and waited in the mounting tray (45) until it could be transferred to the polishing section (10). Similarly, the unloader unit (70) is transferred to the unloader unit (70) immediately after the polishing in the polishing unit (10), and is placed until it can be transferred to the cleaning / drying unit (61). Waited in the tray (75). In this polishing cycle, the immersion time in the etchant in the loader part (40) and the unloader part (70) of the example was the time shown in Table 1. The immersion time is the immersion time of the magnetic disk substrate (S) last transferred from the cassette case (C) to the mounting tray (45) in the loader unit (10), and is the first in the unloader unit (70). The immersion time of the magnetic disk substrate (S) transferred from the mounting tray (75) to the cleaning / drying unit (61).

以上のサイクルにおいて、1枚の磁気ディスク基板(S)につき、ローダー部(40)への移送開始から乾燥終了までに要する加工時間を求め、実施例と比較例で比較した。   In the above cycle, for each magnetic disk substrate (S), the processing time required from the start of transfer to the loader section (40) to the end of drying was determined and compared between the example and the comparative example.

〔試験2〕
上記研磨サイクルにおいて、目標の仕上がり表面粗さ(Ra)を1nmに設定し、試験例1と同じように研磨試験を行った。
[Test 2]
In the above polishing cycle, the target finished surface roughness (Ra) was set to 1 nm, and the polishing test was conducted in the same manner as in Test Example 1.

これらの結果を表1に示す。   These results are shown in Table 1.

Figure 2008155323
Figure 2008155323

表1の結果より、待機時間を利用してエッチングすることにより、スループットを約5%短縮できることが判った。   From the results in Table 1, it was found that the throughput can be shortened by about 5% by performing etching using the waiting time.

実施例および比較例において、磁気ディスク基板(S)の移載および移送に要する時間は等しいので、加工時間の差は研磨部(10)における研磨時間の差である。換言すれば、研磨の前後にエッチングを行うことにより、研磨時間を短縮することができ、かつエッチングは待機時間を利用して行うのでスループットは延長されない。   In the example and the comparative example, the time required for transfer and transfer of the magnetic disk substrate (S) is equal, so the difference in processing time is the difference in polishing time in the polishing section (10). In other words, the etching time can be shortened by performing etching before and after the polishing, and the throughput is not extended because the etching is performed using the standby time.

本発明の湿式研磨方法は、エッチングと研磨を組み合わせることによって品質の高い研磨を効率良く行うことができる。このため、高い研磨品質が要求される磁気ディスク基板の研磨に好適である。   The wet polishing method of the present invention can efficiently perform high-quality polishing by combining etching and polishing. Therefore, it is suitable for polishing a magnetic disk substrate that requires high polishing quality.

本発明の湿式研磨装置の一実施形態の概略構成を示す正面図である。It is a front view which shows schematic structure of one Embodiment of the wet polishing apparatus of this invention. 図1の湿式研磨装置において、ローダー部、研磨部およびアンローダー部を示す斜視図である。FIG. 2 is a perspective view showing a loader unit, a polishing unit, and an unloader unit in the wet polishing apparatus of FIG. 1. 研磨部の要部断面図である。It is principal part sectional drawing of a grinding | polishing part. ローダー部およびアンローダー部のプレートを示す斜視図である。It is a perspective view which shows the plate of a loader part and an unloader part. ローダー部およびアンローダー部の移載装置の要部を示す斜視図である。It is a perspective view which shows the principal part of the transfer apparatus of a loader part and an unloader part. 載置トレイおよび把持部を示す要部断面図である。It is principal part sectional drawing which shows a mounting tray and a holding part.

符号の説明Explanation of symbols

1…湿式研磨装置
10…研磨部
11…下定盤
15…上定盤
30…キャリア
31…保持孔
40…ローダー部(載置移載部)
41,71…テーブル(被加工物展開ステージ)
42,72…プレート
43…凹部
44…溝
45,75…載置トレイ
70…アンローダー部(載置移載部)
50,80…移載装置
54,84…把持部
56,86…爪
S…磁気ディスク基板(被加工物)
S1…貫通孔
W…エッチャント
1 ... Wet polishing equipment
10 ... Polishing part
11 ... Lower surface plate
15… Upper surface plate
30 ... Career
31 ... Holding hole
40… Loader section (mounting / transferring section)
41,71 ... Table (workpiece development stage)
42,72… Plate
43 ... recess
44 ... Groove
45,75 ... Loading tray
70 ... Unloader section (mounting / transferring section)
50,80 ... Transfer device
54,84… Holding part
56,86 ... Nail S ... Magnetic disk substrate (workpiece)
S1 ... through hole W ... etchant

Claims (12)

被加工物を上下に対向配置された上定盤と下定盤との間に挟持して研磨液を供給しながら研磨する研磨部と、前記研磨部の前段および後段の少なくとも一方に配置され、上面に形成された凹陥部内に被加工物を載置する載置トレイを有する被加工物展開ステージとを備えた湿式研磨装置を用い、
前記載置トレイの凹陥部内にエッチャントを貯留し、前記研磨部で被加工物を研磨する間に、前記被加工物展開ステージにおいて他の被加工物をエッチャントに浸した状態で待機させてエッチングすることを特徴とする湿式研磨方法。
A polishing part that is sandwiched between an upper surface plate and a lower surface plate that are vertically opposed to each other and polished while supplying a polishing liquid, and is disposed on at least one of a front stage and a rear stage of the polishing part, and an upper surface Using a wet polishing apparatus provided with a workpiece development stage having a placement tray for placing the workpiece in a recessed portion formed in
The etchant is stored in the recessed portion of the placing tray, and while the workpiece is polished by the polishing unit, the workpiece is developed while waiting for another workpiece to be immersed in the etchant at the workpiece development stage. A wet polishing method characterized by the above.
前記被加工物展開ステージは、前記研磨部の前段に配置され、研磨部に装填する被加工物を待機させる装填用ステージであり、被加工物をエッチャントに浸してエッチングした後に研磨する請求項1に記載の湿式研磨方法。   2. The workpiece development stage is a loading stage that is arranged in front of the polishing unit and waits for a workpiece to be loaded in the polishing unit, and is polished after being immersed in an etchant and etched. The wet polishing method according to 1. 前記被加工物展開ステージは、前記研磨部の後段に配置され、湿式研磨装置から排出する研磨済みの被加工物を待機させる排出用ステージであり、被加工物を研磨した後にエッチャントに浸してエッチングする請求項1または2に記載の湿式研磨方法。   The workpiece development stage is a discharge stage that is disposed after the polishing unit and waits for a polished workpiece to be discharged from the wet polishing apparatus. After polishing the workpiece, the workpiece is immersed in an etchant and etched. The wet polishing method according to claim 1 or 2. 前記被加工物はアルミニウム製磁気ディスク基板である請求項1〜3のいずれかに記載の湿式研磨方法。   The wet polishing method according to claim 1, wherein the workpiece is an aluminum magnetic disk substrate. 前記エッチャントとして、前記研磨液の分散媒、この分散媒の濃縮液、この分散媒の希釈液のうちのいずれかを用いる請求項1〜4のいずれかに記載の湿式研磨方法。   The wet polishing method according to claim 1, wherein any one of a dispersion medium of the polishing liquid, a concentrated liquid of the dispersion medium, and a diluted liquid of the dispersion medium is used as the etchant. 被加工物を上下に対向配置された上定盤と下定盤との間に挟持して研磨液を供給しながら研磨する研磨部と、前記研磨部の前段および後段の少なくとも一方に配置され、被加工物を載置して待機させる載置トレイを有する被加工物展開ステージとを備える湿式研磨装置であって、
前記被加工物展開ステージの載置トレイが上面にエッチャントを貯留する凹陥部を有し、被加工物をエッチャントに浸した状態で載置してエッチングするものとなされていることを特徴とする湿式研磨装置。
A workpiece is sandwiched between an upper surface plate and a lower surface plate that are vertically opposed to each other and polished while supplying a polishing liquid, and is disposed in at least one of a front stage and a rear stage of the polishing section, A wet polishing apparatus comprising a workpiece development stage having a placement tray for placing a workpiece on standby;
A wet tray characterized in that a mounting tray of the workpiece development stage has a recessed portion for storing an etchant on an upper surface, and the workpiece is placed and etched while being immersed in the etchant. Polishing equipment.
前記被加工物展開ステージは、前記研磨部の前段に配置され、前記研磨部に装填する被加工物を待機させる装填用ステージである請求項6に記載の湿式研磨装置。   The wet polishing apparatus according to claim 6, wherein the workpiece developing stage is a loading stage that is disposed in a front stage of the polishing unit and waits for a workpiece to be loaded in the polishing unit. 前記被加工物展開ステージは、前記研磨部の後段に配置され、湿式研磨装置から排出する研磨済みの被加工物を待機させる排出用ステージである請求項6または7に記載の湿式研磨装置。   8. The wet polishing apparatus according to claim 6, wherein the workpiece developing stage is a discharge stage that is disposed at a subsequent stage of the polishing unit and waits for a polished workpiece discharged from the wet polishing apparatus. 載置移載部として、前記被加工物展開ステージと、把持部により被加工物を把持し、前記研磨部と被加工物展開ステージとの間で被加工物を移載する移載装置とを有する請求項6〜8のいずれかに記載の湿式研磨装置。   As the placement transfer unit, the workpiece development stage, and a transfer device that holds the workpiece by the gripping unit and transfers the workpiece between the polishing unit and the workpiece development stage. A wet polishing apparatus according to any one of claims 6 to 8. 前記研磨部が被加工物を装填する保持孔が形成されたキャリアを有し、前記載置移載部が前記キャリアの保持孔と同数の載置トレイおよび把持部を有し、全被加工物の移載を一括して行う請求項9に記載の湿式研磨装置   The polishing unit has a carrier in which a holding hole for loading a workpiece is formed, and the placement and transfer unit has the same number of mounting trays and gripping portions as the holding hole of the carrier, and all the workpieces The wet polishing apparatus according to claim 9, wherein the transfer is performed in a lump. 前記被加工物展開ステージが前記研磨部のキャリアと同数のプレートを有し、各プレートが各キャリアの保持孔と同数の載置トレイを有する請求項10に記載の湿式研磨装置。   The wet polishing apparatus according to claim 10, wherein the workpiece development stage has the same number of plates as the carrier of the polishing unit, and each plate has the same number of mounting trays as the holding holes of the carriers. 前記プレートに形成された有底の凹部にリング状の載置トレイを嵌め込むことにより凹陥部が形成され、かつ前記凹部の底部に凹部を連通させる溝が設けられている請求項11に記載の湿式研磨装置。   12. The recessed portion is formed by fitting a ring-shaped mounting tray into a recessed portion having a bottom formed on the plate, and a groove is provided in the bottom portion of the recessed portion to communicate the recessed portion. Wet polishing equipment.
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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63114866A (en) * 1986-10-31 1988-05-19 Hoya Corp Method of processing glass
JPH0425373A (en) * 1990-05-17 1992-01-29 Showa Alum Corp Polishing device
JPH10163138A (en) * 1996-11-29 1998-06-19 Fujitsu Ltd Manufacture of semiconductor device and polisher
JPH11114813A (en) * 1997-10-07 1999-04-27 Speedfam Co Ltd Polishing system and control method for it
JP2000263402A (en) * 1999-03-18 2000-09-26 Systemseiko Co Ltd Polishing method and polishing device
JP2004249444A (en) * 2003-02-21 2004-09-09 Hoya Corp Polishing device, polishing method, and method for manufacturing substrate for mask blank
JP2005166809A (en) * 2003-12-01 2005-06-23 Sumitomo Mitsubishi Silicon Corp Process for producing silicon wafer

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63114866A (en) * 1986-10-31 1988-05-19 Hoya Corp Method of processing glass
JPH0425373A (en) * 1990-05-17 1992-01-29 Showa Alum Corp Polishing device
JPH10163138A (en) * 1996-11-29 1998-06-19 Fujitsu Ltd Manufacture of semiconductor device and polisher
JPH11114813A (en) * 1997-10-07 1999-04-27 Speedfam Co Ltd Polishing system and control method for it
JP2000263402A (en) * 1999-03-18 2000-09-26 Systemseiko Co Ltd Polishing method and polishing device
JP2004249444A (en) * 2003-02-21 2004-09-09 Hoya Corp Polishing device, polishing method, and method for manufacturing substrate for mask blank
JP2005166809A (en) * 2003-12-01 2005-06-23 Sumitomo Mitsubishi Silicon Corp Process for producing silicon wafer

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