JP2008153954A - Waveguide and electronic component using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a waveguide having excellent thermal conductivity capable of suppressing interference and an undesired electromagnetic wave in wireless connection by a transmission and reception element, and an electronic component. <P>SOLUTION: The waveguide having a waveguide hole structure has a conductor layer 100 on the surface of an inner wall of a through hole or non-through hole provided in a base material 30, a dielectric layer 200 on an inner wall of the conductor layer, and an electromagnetic wave absorption layer 300 on an inner wall of the dielectric layer. The electronic component is provided with the waveguide between semiconductor chips with transmission and reception elements 10 and 11 mounted thereon or on the chips themselves. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a wireless connection by coupling an inductor or a capacitor which is a transmitting / receiving element between semiconductor devices, particularly three-dimensionally mounted chips formed by laminating a plurality of semiconductor integrated circuit chips, between a chip and a substrate, or between a substrate and a substrate. Relates to waveguides and electronic components.

  In general, semiconductor integrated circuits tend to have higher performance by incorporating peripheral circuits into the semiconductor IC chip one after another as miniaturization and higher integration progress. Due to demands for further miniaturization and higher speed, it is required not only between the substrates and between the semiconductor chips and the substrates, but also to integrate a comprehensive system into one package.

  In recent years, in a three-dimensional integrated system in which semiconductor chips are stacked, complicated inter-chip wiring and advanced positioning are required. However, there is a wireless connection method using coupling of inductors and capacitors as transmitting / receiving elements. It has been proposed (see Patent Document 1).

  For example, a wireless connection using an inductor is a system in which a spiral inductor is formed on a semiconductor chip, and signal transmission between a plurality of chips is wirelessly connected by coupling of the inductor, and high-speed transmission and high integration can be achieved. It is expected.

There are roughly two types of this system, one is called global connection, and is used for communication by three-dimensional transmission / reception element arrangement using microwaves between adjacent chips.
The other is called local connection by two-dimensional transmitting / receiving element arrangement that realizes multiple parallel paths between a plurality of chips facing each other, a substrate-chip, and a substrate-substrate. That is, the global connection can be used for broadcasting / casting to all chips and substrates, global control, and the like.
On the other hand, the local connection can increase the data communication bandwidth by a multiple parallel structure, and is used for data communication such as information on a two-dimensional arrangement.
However, in this local connection, interference with adjacent inductors and propagation of unnecessary electromagnetic waves (that is, noise) through the dielectric layer of the substrate are serious problems.

  As a method for preventing the deterioration of the characteristics of the inductor by reducing the amount of unnecessary electromagnetic wave propagation through the substrate-dielectric layer to the inductor and suppressing the parasitic capacitance between the inductor and the inductor, the above-mentioned problem is prevented. Then, a shield structure is known in which a metal ground wiring and a plurality of ground through holes are arranged through a plurality of chips around the inductor and connected to the lowermost metal ground layer to surround the inductor. .

However, in this case, an appropriate space required for wiring of the ground through-hole group is required, and the pitch between the inductors cannot be reduced. In addition, because of the shield structure, intrusion of unnecessary electromagnetic waves from the outside can be suppressed and prevented, but there is an inevitable problem of interference due to unnecessary electromagnetic waves generated due to self-reflection of signal electromagnetic waves inside the grounded through hole group. .
In order to avoid the problem of unnecessary electromagnetic waves due to self-reflection, it is essential to provide a control circuit or the like, and high-speed transmission cannot be expected.

Furthermore, in this wireless connection method using a coupling such as an inductor or the like, energy consumption increases, and thus there is a problem of heat generation, and a heat dissipation method has been studied.
JP 2003-68862 A

The present invention relates to interference between adjacent transmitter / receiver elements and unnecessary electromagnetic waves propagated through a dielectric layer of a substrate and opposing transmitter / receiver for high-speed wireless connection in a wireless connection by a transmitter / receiver element such as an inductor and a capacitor. An object of the present invention is to provide a waveguide that suppresses unnecessary electromagnetic waves due to self-reflection of signal electromagnetic waves of the element.
Another object of the present invention is to reduce the arrangement pitch of transmission / reception elements, achieve high-density mounting, and high-speed transmission. Also, the connection pitch variation and system due to the difference in thermal expansion coefficient accompanying the increase in power consumption of wireless connection by the transmission / reception elements. The purpose is to improve the heat dissipation of internal heat storage.

The waveguide of the present invention includes a dielectric base material in which through holes or non-through holes (hereinafter also referred to as waveguide holes) are formed, and a conductor provided on the inner wall of the through hole or non-through hole. A dielectric layer provided on the inner wall of the layer, and the conductor layer;
And an electromagnetic wave absorbing layer provided on the inner wall of the dielectric layer.
The waveguide of the present invention includes a conductor base material in which a through hole is formed, a dielectric layer provided on an inner wall of the through hole (hereinafter also referred to as a waveguide hole), and an inner wall of the dielectric layer. And an electromagnetic wave absorbing layer provided on the substrate.

In the waveguide of the present invention, the conductor is preferably a nonmagnetic metal.
The electromagnetic wave absorbing layer is preferably a layer having a thickness of 5 to 200 nm containing a metal material or conductive ceramics.
It is preferable to have a coating layer on the surface of the substrate, and the coating layer is made of a pressure-sensitive adhesive, an adhesive, or a gel substance.

In the electronic component using the waveguide of the present invention, it is preferable that the waveguide is arranged between a plurality of semiconductor chips or circuit boards on which transmission / reception elements are mounted.
In the electronic component using the waveguide of the present invention, it is preferable that the waveguide is provided on a substrate of a semiconductor chip or a circuit board on which a transmitting / receiving element is mounted.

 In wireless connection by electromagnetic coupling between semiconductor chips, between substrates, and between chips and substrates, the waveguide of the present invention is disposed in the gap between a plurality of opposed transmitting and receiving elements, so that the locally connected transmitting and receiving elements Electromagnetic waves that are signals that pass straight in the vicinity of the center between them are not suppressed or absorbed, and are emitted from adjacent or other parts of transmitting elements in all directions, as well as dielectric layers and dielectric layers of chips and substrates. The effect of preventing interference is manifested by suppressing and attenuating unnecessary electromagnetic waves propagated through the like.

 That is, in the three-layer configuration of the ground layer, the dielectric layer, and the electromagnetic wave absorbing layer provided on the inner wall of the waveguide hole, unnecessary electromagnetic waves incident on the electromagnetic wave absorbing layer are suppressed and attenuated. In addition, it is possible to prevent interference caused by unnecessary electromagnetic waves due to self reflection reaching the receiving element and to suppress and attenuate unnecessary electromagnetic waves transmitted.

  Hereinafter, embodiments of the waveguide of the present invention and electronic components using the waveguide will be described.

  FIG. 1 shows the waveguide hole of the waveguide of the present invention provided in a dielectric substrate. The waveguide hole 20 provided in the dielectric substrate 30 has a conductor layer 100 on its inner wall and a dielectric layer 200 on its inner wall, and electromagnetic waves are formed on at least a part of the inner wall of the dielectric layer 200. An absorption layer 300 is provided. The electromagnetic wave absorbing layer 300 has a structure suspended via the dielectric layer 200. The conductor layer 100 is connected to the circuit wiring 40 provided on the dielectric base material 30 and wired to the circuit ground. The waveguides are arranged on a one-to-one basis in the gaps between opposing transmitting and receiving elements (hereinafter also referred to as transmitting inductors and receiving inductors) 10 and 11, respectively.

  FIG. 2 shows a structure in which the waveguide hole of the waveguide of the present invention is provided in a conductor base material. The waveguide hole 20 provided in the conductor base material 35 has a dielectric layer 200 on its inner wall, and has an electromagnetic wave absorption layer 300 on the inner wall of the dielectric layer 200. The transmitting / receiving elements 10 and 11 are arranged so as to sandwich the waveguide hole 20. The electromagnetic wave absorbing layer 300 has a structure in which the electromagnetic wave absorbing layer 300 is electrically suspended from the conductor base material 35 via the dielectric layer 200. The conductor base material 35 is connected to the ground of the circuit.

FIG. 3 shows a schematic cross-sectional view of an example of the waveguide of the present invention.
The waveguide hole 20 may be a through-hole or a non-through-hole. In (3-a), the waveguide hole is a through-hole, and the base material is the dielectric base material 30. . In (3-b), the waveguide hole 20 is a through hole, and the base material is the conductor base material 35. In (3-c), the waveguide hole 20 is a non-through hole, and the base material is the dielectric base material 30. As long as the electromagnetic wave absorption layer 300 is formed on the inner surface of the waveguide hole via the dielectric layer 200 on the conductor layer 100 or the conductor base material 35 connected to the ground and the inner wall thereof, the configuration is limited. It is not a thing.

FIG. 4 illustrates an example in which the waveguide hole is not a vertical hole with respect to the substrate.
That is, the waveguide hole 20 provided with the conductor layer 100, the dielectric layer 200, and the electromagnetic wave absorption layer 300 may be placed between the opposing transmitting and receiving elements, and the inclined waveguide hole corresponding to the positional relationship of the transmitting and receiving elements. It may be. Further, in order to suppress unnecessary electromagnetic waves and enhance the attenuation effect, the hole diameters and shapes on the transmission side and the reception side may be different, or an indefinite shape having an uneven shape on the inner wall of the waveguide hole 20 may be used.
(4-a) (4-a ′) is a configuration in which the waveguide hole 20 is inclined. (4-b) (4-b ′) has a waveguide hole having a conical shape. (4-c) (4-c ′) is a waveguide hole having an indefinite shape.

FIG. 5 illustrates a configuration in which the planar shape of the waveguide hole 20 is a circular shape, a rectangular shape, or any other arbitrary shape. In (5-a), the waveguide hole provided in the dielectric substrate 30 is circular. In (5-a ′), the waveguide hole 20 provided in the conductor base material 35 is circular. (5-b) is a rectangular waveguide hole 20 in the dielectric substrate 30, and (5-b ′) is a rectangular waveguide hole 20 in the conductor substrate 35. (5-c) is a configuration of the waveguide hole 20 having an indefinite shape in the insulating base material 30, and (5-c ') is a configuration of the waveguide hole 20 having an indefinite shape in the conductor base material 35.
The shape of the waveguide hole may be an arbitrary shape corresponding to the shape of the transmission / reception element, but is preferably a shape that suppresses unnecessary electromagnetic waves and has a good attenuation efficiency. A circular waveguide hole in which the electromagnetic wave absorption layer 300 is equidistant from the center of signal layer reception is a preferred shape. From the viewpoint of processing technology, a circular waveguide hole is preferable as an economical shape. What is necessary is just to design the shape with the arrangement | sequence of a transmission / reception element, the unnecessary electromagnetic wave suppression effect, and an economical manufacturing method.

FIG. 6 illustrates an example in which the conductor layer 100, the dielectric layer 200, and the electromagnetic wave absorption layer 300 are provided on the surface of the base material.
The electromagnetic wave absorbing layer 300 is insulated from the conductor layer 100 and the conductor base material 35 via the dielectric layer 200, and is in a floating state.
In (6-a), the dielectric substrate 30 has the waveguide hole 20, and the conductor layer 100, the dielectric layer 200, and the electromagnetic wave absorption layer 300 are sequentially formed on the surface of the waveguide hole and the dielectric substrate 30. It has been done. In (6-a ′), the base material is the conductor base material 35, and the dielectric layer 200 and the electromagnetic wave absorption layer 300 are sequentially formed on the waveguide hole and the base material surface. (6-b) is a structure in which the conductor layer 100, the dielectric layer 200, and the electromagnetic wave absorbing layer 300 are sequentially formed on the front and back surfaces of the dielectric substrate 30 in the configuration of (6-a). (6-b ′) is a structure in which the dielectric layer 200 and the electromagnetic wave absorbing layer 300 are sequentially formed on the front and back surfaces in the configuration of (6-b).
In the case where the electromagnetic wave absorbing layer 300 is formed on the inner surface of the conductor layer 100 or the conductor base material 35 connected to the ground and the inner wall of the base material surface via the dielectric layer 200, the structure of the base material surface In this case, the effect of suppressing unnecessary electromagnetic waves is exhibited.
The configuration of the waveguide according to the present invention is not limited to the above example as long as the above configuration is made in the waveguide hole and the surface of the base material is also the above configuration.

FIG. 7 illustrates a configuration in which a dielectric 50 is provided inside the center of the waveguide hole 20.
The dielectric 50 provided at the central portion may be provided at least at a part of the waveguide hole. The dielectric 50 is effective for protecting the surface of the electromagnetic wave absorbing layer 300, and has an effect of preventing air insulation and embedding a dew-condensation gap by eliminating the gap when arranged between the transmitting and receiving elements. I can expect.

FIG. 8 illustrates an example in which a coating layer 400 is provided on at least a part of the surface of the substrate of the waveguide of the present invention. The covering layer 400 is an intermediate member that sandwiches and fixes a semiconductor chip or substrate on which a transmitting / receiving element is mounted and a base material provided with a waveguide hole. The covering layer 400 for fixing the base material provided with the waveguide is preferably a dielectric, and the circuit wiring on the surface of the base material provided with the waveguide hole and the circuit wiring of the chip or substrate on which the transmitting / receiving element is mounted Ensure insulation. The covering layer 400 may be on one surface or may be scattered, and may be flexible or adhesive so that the semiconductor chip to be fixed can be repaired. good.
It is also preferable that the coating layer 400 be a gel-like substance that provides good adhesion between the base material provided with the waveguide holes and the semiconductor chip or circuit board on which the transmitting / receiving element is mounted.

In the electronic component using the waveguide of the present invention, it is preferable that the waveguide is disposed between a plurality of semiconductor chips or circuit boards on which transmission / reception elements are mounted.
An example of an electronic component using the waveguide of the present invention is shown in FIG.
The upper semiconductor chip 14 includes the semiconductor circuit group 13a and the transmitting / receiving element 10 arranged in an array, and the dielectric base material 30 in which the waveguide 25 group is formed in the lower layer. The semiconductor chip 15 having the semiconductor circuit group 13b and the transmitting / receiving element 11 formed thereon is disposed, and the dielectric base material 30 having the waveguide 25 group formed in the lower layer is disposed on the lower layer through the adhesive layer that is the covering layer 400. A semiconductor chip 16 on which the semiconductor circuit group 13c and the transmitting / receiving element 12 are formed is preferably disposed. At this time, it is preferable to arrange so that the axial direction of the waveguide 25 group is along the traveling direction of the electromagnetic wave propagating between the transmitting and receiving elements 10, 11, and 12. The transmitting / receiving element is an electronic component that can be locally connected by wireless connection in three semiconductor chips.

In FIG. 10, the electronic component using the waveguide of this invention of another structure was shown with the model expanded view.
In the electronic component of the present invention, the coating layer 400 is formed on the front and back of the dielectric base material 30 in which the waveguide 25 group is formed in the gap between the semiconductor chip 14 and the semiconductor chip 15 in which the plurality of semiconductor circuit groups and the transmitting / receiving elements 10 are arranged. It is preferable to use the waveguide of the present invention that is sandwiched between the two.
The electronic component using the waveguide of the present invention is not limited to the above-described configuration, and may be an electronic component in which the waveguide of the present invention is disposed between transmitting and receiving elements.

In the electronic component using the waveguide of the present invention, it is preferable that the waveguide is provided on a substrate of a semiconductor chip or a circuit board on which a transmitting / receiving element is mounted. FIG. 11 shows an example of an electronic component in which the waveguide of the present invention is formed on the semiconductor chip 14 provided with the transceiver 10. The waveguide hole 20 in which the conductor layer 100, the dielectric layer 200, and the electromagnetic wave absorption layer 300 of the present invention are provided is provided immediately below the transmitting / receiving element 10.
It is a preferable configuration as an electronic component that the waveguide of the present invention is integrated with a semiconductor chip on which a transmission / reception element is mounted. This is because pitch variation due to a difference in thermal expansion coefficient or the like does not occur and the number of parts can be limited.
Further, the distance between the transmitting and receiving elements is reduced, which is preferable as a configuration in which the transmission and reception energy is reduced and the stacked thickness of the semiconductor chips is reduced.

  As described above, when the waveguide is provided on the semiconductor chip substrate or the substrate itself on which the integrated circuit and the transmission / reception element are mounted, the waveguide becomes a waveguide corresponding to the arrangement pitch of the transmission / reception elements 10 and no positional deviation occurs. .

  FIG. 12 illustrates an example in which a plurality of waveguides 25 are arranged for one set of transmitting and receiving elements 10. The presence of a plurality of waveguides with respect to the transmission / reception element is preferable because it facilitates the alignment of the transmission / reception element 10 and the waveguide hole.

  As described above, the waveguide holes having a one-to-many configuration in the arrangement of the transmitting and receiving elements can be arranged without considering the deviation of the arrangement pitch.

As shown in FIG. 13, when the substrate on which the waveguide is formed is the dielectric substrate 30, the electromagnetic wave absorbing layer 300, the dielectric layer 200, and the conductor layer 100 connected to the ground are formed on the inner wall of the waveguide. A waveguide having a structure in which the dielectric layer 200 is formed on the inner wall of the conductor layer 100 and the electromagnetic wave absorbing layer 300 is formed thereon may be used.
In other words, the dielectric layer and the electromagnetic wave absorption layer are formed on both the inner side and the outer side across the conductor layer, so that the unnecessary electromagnetic wave incident from the side surface of the waveguide is not reflected but attenuated, The function to absorb can be demonstrated.
If the conductor layer 100, the dielectric layer 200, and the electromagnetic wave absorption layer 300 are formed on both the front and back surfaces of the dielectric base material 30, there is no unnecessary electromagnetic wave entering from the side surface of the waveguide. There is no need for electromagnetic wave absorption on both sides.
Moreover, if the base material is a conductor base material, there is no need for the structure of electromagnetic wave absorption on both sides.

Further, the waveguide of the present invention will be described in detail.
<Waveguide hole>
The waveguide hole may or may not penetrate through the base material, and the wall surface of the waveguide hole is preferably along the traveling direction of electromagnetic waves for transmission and reception in order to exert the effect of suppressing unnecessary electromagnetic waves described later. The cross-sectional shape in the traveling direction of the electromagnetic wave is not limited to a circular shape, but is a square such as a square or a rectangle, and a similar shape of the wiring shape of an inductor of a transmitting / receiving element, or indefinite It may be a shape. Further, the cross-sectional shape of the waveguide hole may not be constant, and the waveguide hole diameter is gradually enlarged, reduced, or repeatedly enlarged or reduced, or has a stepped step. Also good.

Further, the inner wall of the waveguide hole may be smooth or rough. An unevenness or zigzag wall shape that increases the surface area of the electromagnetic wave absorption layer 300 described later may be used.
That is, the structure of the conductive layer 100 or the conductive substrate 35, the dielectric layer 200, and the electromagnetic wave absorbing layer 300 connected to the ground around the traveling direction without hindering the propagation of electromagnetic waves for signal transmission of the transmitting and receiving elements. The shape of the waveguide formed on the inner wall of the waveguide hole may be sufficient.

  Further, the inner diameter distance of the cross section of the waveguide hole may be smaller than the outer dimension of the transmission / reception element, and it is only necessary to have a signal transmission part that contributes to wireless connection by going straight through the coupling center of the transmission / reception element.

  Furthermore, one waveguide or a plurality of waveguide groups may be used for one set of transmitting and receiving elements. Even in the case of a plurality of waveguides, wireless connection is possible because the center portion of the plurality of waveguide holes passes through without disturbing the progress of electromagnetic waves for signal transmission.

The center inside the waveguide hole may be hollow or part of the hollow may be filled with a dielectric, and the electromagnetic wave for signal transmission of the transmitting / receiving element can be wirelessly connected by going straight through the dielectric It is what.
The higher the relative dielectric constant of this dielectric is, the more effective for wireless connection, and the relative dielectric constant is preferably 2 or more. Furthermore, 2.5 or more is more preferable.
As a method for forming the waveguide hole, a normal method suitable for the shape, size, and material type can be used. Depending on the drilling that is mechanical excavation and the base material, there are etching processing, laser processing, and the like. Moreover, if it is a semiconductor chip base material etc., the microfabrication by the MEMS technique by a silicon process should just be used. In addition, it is not limited to the method of description, What is necessary is just to select the processing method suitable for the base material.

<Dielectric substrate>
The dielectric base material is a base material on which the waveguide hole is formed, and may be an inorganic material or an organic material as long as it is a dielectric material.
Examples of the inorganic material include glass, ceramics such as aluminum oxide and silicon nitride, and foamed ceramics.
Examples of organic materials include polyolefins, polyamides, polyesters, polyethers, polyketones, polyimides, polyurethanes, polysiloxanes, polysilazanes, phenolic resins, epoxy resins, acrylic resins, polyacrylates, vinyl chloride resins, chlorinated polyethylene resins, It may be a diene rubber such as natural rubber, isoprene rubber, butadiene rubber or styrene butadiene rubber, butyl rubber, ethylene propylene gum, urethane rubber, silicone rubber or the like, or an uncured product thereof. Further, it may be a modified product such as the above-mentioned resin or rubber, a mixture, or a copolymer. It is preferable that the material is easy to form the waveguide hole of the waveguide with a suppression function of the present invention, and a material suitable for the processing method may be selected.

In the transmission and reception of semiconductor chips, there are systems whose power consumption exceeds 1 mW, and it is necessary to take measures for heat dissipation. However, a mixture of thermally conductive substances such as thermally conductive boron nitride in an organic material resin or an oxidation The base material is preferably a thermally conductive ceramic such as aluminum (Al ₂ O ₃ ) or beryllium oxide (BeO). More preferably, aluminum nitride (AlN) (thermal conductivity of AlN: 4 × 10 ⁻⁶ / ° C.) substantially equal to the thermal expansion coefficient of the semiconductor chip (thermal expansion coefficient of Si chip: 4 × 10 ⁻⁶ / ° C.) Etc. Aluminum nitride (AlN) has a thermal conductivity of 200 W / mK and is one of the preferred materials for the dielectric substrate.
Moreover, there may be a part made of metal in a part of the dielectric base material, and a part of the surface of the dielectric base material may be made of a metal material used for a conductor base material described later.

  Thus, the base material which forms a waveguide hole shall have the outstanding thermal conductivity, and the effect which thermally radiates the heat | fever generate | occur | produced by the wireless connection by a transmission / reception element outside a system is expressed. Further, as will be described later, when the base material is a conductor base material and is a metal, it exhibits good thermal conductivity and further has an excellent heat dissipation effect.

<Conductor base material>
Examples of the material for the conductor base material include metals such as gold, silver, copper, iron, aluminum, brass, nickel, tin, lead, and zinc. Preferably, aluminum, copper, gold, silver, tin, or the like, which is a nonmagnetic metal that is not affected by magnetization due to electromagnetic waves transmitted and received, can be used. Moreover, these alloy materials may be sufficient. Examples of the shape include a plate, a foil, and a foil. In general, these conductor substrates are preferably subjected to easy adhesion treatment on the side to be bonded to other substrates. The larger the unevenness due to the easy adhesion treatment, the higher the adhesive strength.

The substrate for forming the waveguide of the present invention that can be easily connected to the ground without the need for circuit wiring for connecting to the conductor layer and the ground, which was necessary in the case of the dielectric substrate. It is. Moreover, since it is a metal material, it is excellent in thermal conductivity, and can also dissipate heat generated by the transmitting and receiving elements to the outside of the system. The thermal conductivity of copper is about 400 W / mK and aluminum is about 240 / mK. Further, the thermal expansion coefficient of the copper foil is 17 × 10 ⁻⁶ / ° C., and the aluminum is 23 × 10 ⁻⁶ / ° C., which is different from the thermal expansion coefficient of the semiconductor Si chip 4 × 10 ⁻⁶ / ° C. Is a preferable material as a base material for the waveguide hole of the present invention.

  As described above, if the difference between the thermal expansion coefficient of the substrate on which the waveguide is provided and the thermal expansion coefficient of the peripheral members is small, the arrangement pitch deviation with the transmitting / receiving element is reduced, and the mounting accuracy is improved.

  Further, as metal materials generally used for electronic parts and the like, there are many non-magnetic metal materials copper and aluminum that can be etched. There are two types of foil-shaped copper foils: rolled copper foil (including precision rolling) and electrolytic copper foil. The rolled copper foil has a good mechanical strength against repeated bending, and the electrolytic copper foil has a lower bending resistance than the rolled copper foil, but the cost is low. Even if it is an electrolytic copper foil, what is used by this invention can fully be used. Aluminum foil is more stretchable and less expensive than copper, but aluminum has a specific resistance of about 1.5 times higher than copper, so when trying to obtain the same resistance value It is necessary to increase the thickness and the circuit width.

<Dielectric layer>
The dielectric layer is a layer made of a dielectric having a surface resistance of 1 × 10 ⁵ Ω or more. The material of the dielectric layer may be an inorganic material or an organic material as long as it is a dielectric.

  Examples of the inorganic material include ceramics such as aluminum oxide, aluminum nitride, silicon oxide, and silicon nitride, and foamed ceramics. In addition, when the dielectric layer is a hard material such as ceramics, the microclusters forming the suppression layer described later are agglomerated and it is easy to form a homogeneous thin film. By forming, it becomes difficult to agglomerate microclusters and it becomes a thin film which has a defect.

  Organic materials include polyolefin, polyamide, polyester, polyether, polyketone, polyimide, polyurethane, polysiloxane, polysilazane, phenolic resin, epoxy resin, acrylic resin, polyarylate, vinyl chloride resin, chlorinated polyethylene, and other resins And diene rubbers such as natural rubber, isoprene rubber, butadiene rubber and styrene butadiene rubber, and non-diene rubbers such as butyl rubber, ethylene propylene rubber, urethane rubber and silicone rubber. The organic material may be thermoplastic, thermosetting, or an uncured or semi-cured product thereof. Further, it may be a modified product such as the above-mentioned resin or rubber, a mixture, or a copolymer.

  When the dielectric layer is made of an organic material, it has a complex surface structure at the nano level due to the morphology of the organic polymer. An electromagnetic wave absorbing layer that is easy to maintain and has a large unnecessary electromagnetic wave suppressing effect can be obtained.

  As the dielectric layer, oxygen, nitrogen, and sulfur that can be covalently bonded to metals from the point of adhesion to the cluster and the ability to inhibit the aggregation and growth of the microcluster and to stabilize the dispersion of the microcluster. Those having a group containing an element such as those on the surface and those activated by irradiating the surface with ultraviolet rays, plasma, or the like are preferable. Examples of the group containing an element such as oxygen, nitrogen, and sulfur include hydrophilic groups such as a hydroxyl group, a carboxyl group, an ester group, an amino group, a thiol group, a sulfone group, a carbonyl group, an epoxy group, an isocyanate group, and an alkoxy group. .

This dielectric layer may have a thickness of 0.05 to 50 μm, more preferably 0.1 to 10 μm from the relationship with the electromagnetic wave absorbing layer, and ensure insulation between the conductor layer and the electromagnetic wave absorbing layer. It is sufficient that the conductor layer and the electromagnetic wave absorbing layer are sufficiently electromagnetically coupled.
The relative dielectric constant of the dielectric layer is preferably 2 or more, and more preferably 2.5 or more.

  As a method for forming the dielectric layer, a normal method suitable for the material can be used. In the case of ceramics, a PVD method such as a sol-gel method or a sputtering method, a CVD method, or the like can be given. In the case of an organic material, a method of directly forming a resin solution by a spray method, a dipping method, or the like can be given.

<Electromagnetic wave absorbing layer>
The electromagnetic wave absorbing layer absorbs the electromagnetic wave that travels straight between the transmitting and receiving elements, and also transmits unnecessary electromagnetic waves from adjacent transmitting and receiving elements that enter the electromagnetic wave absorbing layer and unnecessary electromagnetic waves that are propagated through the dielectric and further self-reflection. Suppresses unnecessary electromagnetic waves (that is, noise) generated by.
The electromagnetic wave absorbing layer is preferably a thin film having a thickness of 5 to 200 nm containing a metal material or conductive ceramics.
If the thickness of the electromagnetic wave absorbing layer is 5 nm or less, it is difficult to obtain a sufficient unnecessary electromagnetic wave suppressing effect. If the thickness of the electromagnetic wave absorbing layer is 200 nm or more, microclusters grow and a homogeneous thin film made of a metal material or the like is easily formed. When a homogeneous thin film is formed, the surface resistance is reduced, the metal reflection is increased, and the effect of suppressing unnecessary electromagnetic waves is also reduced.

The thickness of the electromagnetic wave absorption layer is increased by increasing the thickness of the electromagnetic wave absorption layer at five locations based on, for example, a high-resolution electron microscope image as shown in FIG. Obtained by measuring and averaging with.
The surface resistance of the electromagnetic wave absorbing layer is preferably 1 × 10 ⁰ to 1 × 10 ⁴ Ω. When the electromagnetic wave absorption layer is a homogeneous thin film, a limited material with a high volume resistivity is good, but when the volume low efficiency of the material is not so high, there is no physical material in the electromagnetic wave absorption layer that has no metal material or conductive ceramics. The surface resistance can be increased by providing various defects to form a heterogeneous thin film or a chain of microclusters.

The surface resistance of the electromagnetic wave absorbing layer is measured as follows.
Two thin-film metal electrodes such as a gold vapor deposition electrode having a length of 10 mm are pressed against ^two objects to be measured at a distance of 10 mm with a constant load of 50 g / cm ² and a measurement current of 1 mA or less. The resistance between the measuring electrodes is measured, and this value is used as the surface resistance.

Examples of the metal material forming the electromagnetic wave absorbing layer include ferromagnetic metals and paramagnetic metals. Ferromagnetic metals include iron, canonbonyl iron, Fe-Ni, Fe-Co, Fe-Cr, Fe-Si, Fe-Al, Fe-Cr-Si, Fe-Cr-Al, Fe-Al-Si, Fe Examples thereof include iron alloys such as -Pt, cobalt, Mikkel, and alloys thereof.
Examples of the paramagnetic metal include gold, silver, copper, tin, lead, tungsten, silicon, aluminum, titanium, chromium, molybdenum, alloys thereof, and alloys with ferromagnetic metals. Of these, nickel, iron-chromium alloy, tungsten, and noble metals are preferable because they are resistant to oxidation. However, since noble metals are effective, practically nickel, iron-chromium alloy and tungsten are preferable, and nickel and nickel alloy are particularly preferable.

  Examples of the conductive ceramics include metals, alloys composed of one or more elements selected from the group consisting of boron, carbon, nitrogen, silicon, phosphorus, and sulfur, intermetallic compounds, and solid solutions. Specifically, nickel nitride, titanium nitride, tantalum nitride, chromium nitride, zirconium nitride, titanium carbide, silicon carbide, chromium carbide, vanadium carbide, zirconium carbide, molybdenum carbide, tungsten carbide, chromium boride, molybdenum boride, silicidation Examples thereof include chromium and zirconium silicide.

  Since the conductive ceramic has a volume resistivity higher than that of the metal, the electromagnetic wave absorption layer containing the conductive ceramic reduces the electromagnetic wave reflection noise inherent to the metal material. In addition, since conductive ceramics do not have a specific resonance frequency, the frequency at which the unnecessary electromagnetic wave suppressing effect is exerted is widened. Furthermore, it has advantages such as high chemical stability and high storage stability. The conductive ceramic is preferably a nitride or carbide that can be easily obtained by using a reactive gas such as nitrogen gas or methane gas in a physical vapor deposition method.

  Examples of the method for forming the electromagnetic wave absorbing layer include a normal wet plating method, a physical vapor deposition method, and a chemical vapor deposition method. In these methods, although it depends on the conditions and materials used, by terminating the growth of the thin film at an early stage, it becomes not a homogeneous film but an inhomogeneous thin film having fine physical defects can be formed. . Alternatively, a heterogeneous thin film can also be formed by a method of forming a defect by etching a homogeneous thin film with an acid or the like, or a method of forming a defect by a laser ablation.

  FIG. 15 is a field emission scanning microscope image obtained by observing the surface of the electromagnetic wave absorption layer made of a metal material formed on the surface of the dielectric layer by physical vapor deposition, and FIG. 16 is a schematic diagram thereof. The electromagnetic wave absorption layer 300 is observed as an aggregate of a plurality of microclusters 301. The microclusters 301 are formed by physically forming a metal material or the like on a dielectric layer so as to be very thin. There are physical defects between the microclusters 301, and the thin film is not a homogeneous thin film. Although the microclusters 301 are in contact with each other and collect to form a chain, there are many non-existent defects such as a metal material between the aggregated microclusters 301.

FIG. 14 is a high-resolution transmission electron microscope image of the cross section of the electromagnetic wave absorption layer 300 in the film direction. As shown in FIGS. 15 and 16, a crystal lattice (microcluster 301) in which metal atoms arranged at intervals of several kilometers are arranged in a very small crystal and a defect in which a metal material or the like does not exist in a very small range are recognized.
That is, the microclusters 301 are spaced apart from each other, and have not grown into a homogeneous thin film made of a metal material or the like. The state having such physical defects is the volume resistivity R1 (Ω · cm) converted from the measured value of the surface resistance of the electromagnetic wave absorption layer 300 and the volume resistivity R0 (Ω) of the metal material (or conductive ceramic).・ It can be confirmed from the relationship with cm) (reference value). That is, when the volume resistivity R1 and the volume resistivity R0 satisfy 0.5 ≦ logR1−logR0 ≦ 3, an excellent effect of suppressing unnecessary electromagnetic waves is exhibited.
The electromagnetic wave absorbing layer 300 is preferably formed with a thickness of 5 to 200 nm on the inner wall of the dielectric layer on the inner surface of the conductor layer in the waveguide hole. In order to exert the effect of the electromagnetic wave absorbing layer, the electromagnetic wave absorbing layer 300 having a length of 3 μm or more in the circumferential length or depth direction of the waveguide hole is required because the passing distance of the suppressed electromagnetic wave needs to be several μm. Is preferably formed. More preferably, it is preferable to form the transmission path hole over the entire region in the depth direction by effectively utilizing the installation distance between the transmitting and receiving elements.

<Coating layer>
In the coating layer, it is preferable that the waveguide hole is disposed on either one of the front and back surfaces of the base material to be formed to ensure the insulating properties of the chip and the substrate. As long as it is a dielectric, it may be an inorganic material or an organic material. In addition, a material having a good thermal conductivity is effective as a material that radiates heat generated in the transmission / reception system to the outside using the coating layer as a heat transfer material.
Examples of the inorganic material include glass, ceramics such as aluminum oxide and silicon nitride, and foamed ceramics.

  Examples of organic materials include polyolefin, polyamide, polyester, polyether, polyketone, polyimide, polyurethane, polysiloxane, polysilazane, phenolic resin, epoxy resin, acrylic resin, polyacrylate, vinyl chloride resin, chlorinated polyethylene resin, It may be a diene rubber such as natural rubber, isoprene rubber, butadiene rubber, styrene butadiene rubber, butyl rubber, ethylene propylene rubber, urethane rubber, silicone rubber or the like, or an uncured product thereof. Further, it may be a modified product such as the above-mentioned resin or rubber, a mixture, or a copolymer.

Furthermore, the coating layer is preferably a pressure-sensitive adhesive, an adhesive, or a gel substance. Examples of the pressure-sensitive adhesive include acrylic, EPDM, TPR, and silicone. Examples of the adhesive include silicone, acrylic, EPDM, epoxy, urethane, polyimide, and polyester. Examples of the gel substance include silicone and polyurethane.
If the pressure-sensitive adhesive, the adhesive, or the gel-like substance is a material that is cured by a heat treatment or the like after the post-treatment, it is possible to confirm the operation after laminating the semiconductor chips or the like to be cured and fixed.
As a result, it is possible to attach and detach a semiconductor chip or a circuit board on which transmission / reception elements are mounted, which is effective for repairing a semiconductor chip or the like. That is, it is possible to repair a defective chip or the like during an operation test using a semiconductor chip stack or a substrate and chip stack, and to cure and bond from a semi-cured state after confirming normal operation, thereby contributing to a reduction in man-hours.

  As described above, when the coating layer on the surface of the substrate on which the waveguide is provided is an adhesive, an adhesive, or a gel substance, it is possible to easily repair a laminated chip or the like.

In electronic component applications, the pressure-sensitive adhesive and adhesive are preferably room temperature curable or low temperature curable, and more preferably halogen-free. These pressure-sensitive adhesives and adhesives include a pressure-sensitive adhesive tape having a base material made of a plastic film, glass fiber, or the like, a structure having an adhesive tape, or a structure having no base material. Furthermore, there are a pressure-sensitive type and a hot-melt type, and it is only necessary to select one that can be efficiently handled in mounting.
Furthermore, with these pressure-sensitive adhesives and adhesives as main components, boron nitride (BN), silicon nitride (Si ₃ N ₄ ), aluminum nitride (AlN), magnesium oxide (MgO), aluminum oxide ( A composite adhesive having a thermal conductivity of several W / mK obtained by kneading Al ₂ O ₃ ) or the like is preferable.
Furthermore, a thermally conductive adhesive sheet using a silicone gel as a matrix resin and having a surface that is greased by a temperature raising treatment to improve adhesion is also preferable.

  As a method for forming the coating layer, a normal method suitable for the material can be used. In the case of ceramics, a sol-gel method, a PVD method based on a sputtering method, a CVD method, and the like can be given. In the case of an organic material, a method of coating a resin solution directly by a spray method or the like can be used.

Next, the function of the transmission line with an electromagnetic wave absorption function of the present invention will be described.
FIG. 17 illustrates the case where the transmitting / receiving elements arranged opposite to each other are inductors, but a schematic cross-sectional view in the case where the space between the transmitting / receiving elements is air or a dielectric layer is shown.
It is a schematic diagram of an electromagnetic wave 1 coupled from a transmission inductor 10 to a reception inductor 11, an electromagnetic wave 2 from an adjacent transmission element, and an unnecessary electromagnetic wave 3 propagated from the outside.

  In the electromagnetic wave transmitted from the transmitting inductor 10, the electromagnetic wave 1 that is a signal that passes straight in the vicinity of the center between the transmitting and receiving elements with the opposing receiving inductor 11 is transmitted through the air or dielectric between the transmitting and receiving inductors. 11 and is wirelessly connected as a signal. However, the electromagnetic wave 3 propagating from the outside of the adjacent transmitting inductor or the insulating part is also detected by passing through the inductor 11, resulting in interference.

Next, FIG. 18 is a schematic view of a conventional shield structure 4 (see Patent Document 1) arranged around an inductor.
In this case, the electromagnetic wave 2 from the adjacent inductor and the electromagnetic wave 3 from the outside are reflected or attenuated by providing a shield structure 4 of a plurality of ground through-hole groups around the transmitting inductor 10 and the receiving inductor 11, and unnecessary electromagnetic waves. As a result, interference is prevented without affecting the receiving inductor 11.

  However, a space for arranging the shield structure 4 is required, the arrangement pitch between the inductors cannot be reduced, and high-density mounting cannot be achieved. Further, since the electromagnetic wave 3 can be prevented from entering from the outside due to the shield structure, the reflection of the self-transmitting electromagnetic wave 1 from the transmitting inductor 10 is generated by the ground through-hole group in the inside surrounded by the ground through-hole group. Then, it becomes an unnecessary electromagnetic wave 1 ′ and passes through the inductor 11. In order to avoid the problem of the unnecessary electromagnetic wave 1 ′ due to self-reflection, it is essential to cope with an impedance matching circuit in the circuit, which hinders high-speed transmission and high-density mounting.

Next, the case where the waveguide of the present invention is provided between the inductors will be described with reference to FIG.
In the case where the waveguide of the present invention is disposed between the opposing inductors, the electromagnetic wave 3 transmitted from the adjacent inductor or the insulator is transmitted on the outer surface of the conductor layer on the inner wall of the waveguide hole. Moreover, if it is a nonmagnetic conductor base material, it will be reflected and attenuate | damped on the surface. In addition, the unnecessary electromagnetic wave 2 that has entered the waveguide due to a gap between the elements is attenuated by the configuration of the conductor layer, the dielectric layer, and the electromagnetic wave absorbing layer that are grounded provided on the inner wall of the waveguide, and the inductor 11 does not affect the reception of interference.

Further, from the transmission inductor 10, there is an unnecessary electromagnetic wave 2 emitted from the self in all directions, in addition to the electromagnetic wave 1 that is a signal that passes straight in the vicinity of the center between the transmitting and receiving elements. In addition, it is attenuated by the structure of the conductor layer, the dielectric layer, and the electromagnetic wave absorbing layer, which are the ground provided on the inner wall of the waveguide, and does not affect the reception of the inductor.
In the above description, the case where the transmitting / receiving element is an inductor element by dielectric coupling is described. However, even in the case of wireless connection by a capacitive coupling conductor element using a metal pad as the transmitting / receiving element, it is unnecessary from the adjacent metal pad. The waveguide of the present invention exhibits a function of suppressing and absorbing unnecessary electromagnetic waves, unnecessary electromagnetic waves propagating through a dielectric, and unnecessary electromagnetic waves due to self-reflection.

Comparative examples and examples are shown below.
(Comparative Example 1)
A spiral inductor for transmission having a size of 150 μm × 150 μm is formed at a pitch of 200 μm on a FR-4 substrate base material having a thickness of 50 μm as a test substrate with a winding number of 5 times, a wiring width of 10 μm, and a wiring interval of 2 μm. The receiving spiral inductor was formed, and the test substrates were arranged at an interval of 50 μm. Do not place anything between the substrates.
A transmission / reception circuit capable of wireless communication at 1 GHz with a transfer rate of 1 Gbps is formed on the chip, and transmits a pulse signal from one transmission spiral inductor under operating conditions of a power supply voltage of 2.5 V and a power consumption of 9 mW, The test module is configured such that the received signal can be monitored between the opposing spiral inductor for reception and the adjacent spiral inductor for reception.
As a result, the reception signal is detected by the opposing reception inductor, and the reception signal pulse is also detected at the reception signal level in the adjacent reception spiral inductor.

(Comparative Example 2)
A Si substrate having a thickness of 50 μm is provided in a gap of a semiconductor chip having a thickness of 50 μm on which a transmitting / receiving element having the same specification as that used in Comparative Example 1 is mounted, and a concentric circle with a distance of 15 μm around the inductor of the transmitting / receiving element. Sixty shield vias having a through-hole diameter of 10 μm penetrating through one Si substrate and having a copper layer on the inner surface were provided. A 3 μm copper layer corresponding to the ground ground of the shield via is provided on the back surface of the lowermost Si, and the transmitting / receiving element is a test module surrounded by the shield via and the ground ground of the lowermost layer.
With this configuration, a pulse signal is transmitted from one transmission spiral inductor, and the reception signal of the reception spiral inductor adjacent to the opposite reception spiral inductor is monitored. As a result, the adjacent reception signal detected in Comparative Example 1 is detected. No received signal pulse was detected from the spiral inductor, but the pulse signal from the transmitting spiral inductor generated a reflected electromagnetic wave due to the shield via, and the received signal of the opposing receiving spiral inductor generated significant ringing. It has become a thing.

The substrate on which the waveguide hole is provided is an aramid film with a copper foil of 5 μm and a resin thickness of 25 μm on one side, and is etched so as to preliminarily form land portions and circuit wiring connected around the waveguide hole, Next, circular through-hole waveguide holes having a diameter of 120 μm were provided in the same arrangement as the test chip of Comparative Example 1 at a pitch of 200 μm by a carbon dioxide laser processing machine. Subsequently, the inner surface of the waveguide hole was plated with copper to form a conductor layer having a thickness of 3 μm. This conductor layer is connected to the land around the waveguide hole formed on the surface of the aramid film, and is connected to the ground by circuit wiring. Next, a dielectric layer is provided on the inner wall of the conductor layer of the waveguide hole with a thickness of 0.2 μm by the CVD method of methane gas, and further in an atmosphere of argon gas using nitrogen gas as a reactive gas on the inner wall of the dielectric layer Then, nickel metal was physically deposited by magnetron sputtering to form a heterogeneous electromagnetic wave absorbing layer having a thickness of about 20 nm containing nickel nitride.
Next, a heat curable epoxy (Scotchweld: EW-2070 / 3M), which is a heat conductive adhesive, is formed on the front and back surfaces of the aramid film substrate on which a waveguide having a configuration of a conductor layer, a dielectric layer, and an electromagnetic wave absorption layer is formed. (Approx. 10 μm each), and bonded and sandwiched with a transmission / reception test chip having the same specifications as in Comparative Example 1, and cured by heating at 80 ° C. for 1 hour to prepare an electronic component using a waveguide with a chip spacing of 50 μm. did. A test module having a structure in which the through hole in the central portion of the waveguide was embedded with a heat conductive adhesive was used.
With this configuration, a pulse signal is transmitted from one transmission spiral inductor, and the reception signal of the reception spiral inductor adjacent to the opposite reception spiral inductor is monitored. As a result, the adjacent reception signal detected in Comparative Example 1 is detected. A reception signal pulse was not detected from the spiral inductor, and a reception signal without ringing was obtained in the pair of reception inductors. In other words, an electronic component was obtained in which interference between adjacent inductors was prevented and the influence of electromagnetic waves due to self reflection did not occur.

The substrate on which the waveguide hole is provided is a resin-coated copper foil made of a 35 μm thick copper foil with a 3 μm semi-cured epoxy resin layer on the surface layer. A circular through waveguide hole of φ120 μm is formed at a pitch of 200 μm by a YAG laser processing machine. The arrangement was the same as that of the test substrate of Comparative Example 1. Next, on the inner surface of the waveguide hole provided in the resin-coated copper foil, a dielectric layer is provided on the metal inner wall of the waveguide hole and the epoxy resin layer of the resin-coated copper foil with a thickness of 0.2 μm by the CVD method of methane gas, Further, nickel metal is physically vapor-deposited by magnetron sputtering in an atmosphere of argon gas using nitrogen gas as a reaction gas on the inner wall of the dielectric layer to form an inhomogeneous electromagnetic wave absorption layer containing nickel nitride and having a thickness of about 20 nm. did.
Next, an electronic component using a waveguide having a structure with a chip interval of 50 μm is bonded and sandwiched between transmission / reception test boards having the same specifications as in Comparative Example 1 and laminated by a pressure heating press of 5 kg / cm ² at 120 ° C. for 2 hours. Got ready. The through hole in the central portion of the waveguide was a test module having a structure in which the waveguide hole was embedded by flowing a semi-cured epoxy resin by a laminating press.
With this configuration, a pulse signal is transmitted from one transmission spiral inductor, and the reception signal of the reception spiral inductor adjacent to the opposite reception spiral inductor is monitored. As a result, the adjacent reception signal detected in Comparative Example 1 is detected. A reception signal pulse was not detected from the spiral inductor, and a reception signal without ringing was obtained in the pair of reception inductors. In other words, an electronic component was obtained in which interference between adjacent inductors was prevented and the influence of electromagnetic waves due to self reflection did not occur.

A waveguide hole having a diameter of 120 μm and a depth of 25 μm was provided by laser processing immediately below a spiral inductor of a 50 μm-thick substrate on which a transmitter / receiver having the same specification as that used in Comparative Example 1 was mounted. Next, a conductor layer having a thickness of 500 nm was formed on the inner surface of the waveguide hole by sputtering with a copper target, and a dielectric layer having a thickness of 0.2 μm was formed on the inner wall by CVD using methane gas. Further, nickel metal is physically vapor-deposited by magnetron sputtering in an atmosphere of argon gas using nitrogen gas as a reaction gas on the inner wall of the dielectric layer to form an inhomogeneous electromagnetic wave absorption layer containing nickel nitride and having a thickness of about 20 nm. did. Next, similarly to Comparative Example 1, a test module having a configuration using a waveguide in which test substrates for transmitting and receiving elements are arranged at intervals of 50 μm was obtained.
With this configuration, a pulse signal is transmitted from one transmission spiral inductor, and the reception signal of the reception spiral inductor adjacent to the opposite reception spiral inductor is monitored. As a result, the adjacent reception signal detected in Comparative Example 1 is detected. No received signal pulse was detected from the spiral inductor. That is, the result of preventing interference between adjacent inductors was obtained.

From the results of the above comparative examples and examples, in the waveguide configuration of the present invention, it is possible to prevent interference between adjacent transmitting elements and unwanted electromagnetic waves propagated from the outside, and ringing of the received signal due to self reflection also occurs. It is possible to provide a waveguide having a configuration that is not allowed and an electronic component using the waveguide.
Whether the transmitter / receiver element is a dielectric coupling or a capacitive coupling, in the case of wireless connection, an unnecessary electromagnetic wave from an adjacent metal pad, an unnecessary electromagnetic wave propagating through a dielectric, or unnecessary due to self-reflection It is possible to provide a waveguide having a configuration that suppresses various electromagnetic waves and an electronic component using the waveguide.

In addition, the coating layer used in Example 1 is an adhesive having excellent thermal conductivity, and is provided with a thermal conductivity of 1.6 W / mK. By providing, it was possible to dissipate heat generated by the transmitting and receiving elements to the outside of the system.
Further, in the case of using the copper foil of Example 2 as a base material, the thermal conductivity of copper is about 400 W / mK, and by disposing a heat radiating plate adjacent to the copper foil, the heat is similarly released to the outside of the system. It was possible to do. Further, the thermal expansion coefficient of the copper foil is 17 × 10 ⁻⁶ / ° C., and the thermal expansion coefficient of FR-4 is 13 to 16 × 10 ⁻⁶ / ° C., so that the wireless connection without causing the arrangement pitch shift. Was possible.
Further, when the transmission / reception element is provided on the Si chip, since the coefficient of thermal expansion of the Si chip is 4 × 10 ⁻⁶ / ° C., the difference is small and the influence of the thermal expansion does not occur.

In the case where AlN is used as the dielectric base material in which the waveguide hole is provided, the thermal conductivity of the semiconductor chip (thermal expansion coefficient of the Si chip: 4 × 10 ⁻⁶ / ° C.) is approximately equal to 4 × 10 ^Since it shows ⁻⁶ / ° C., it is effective as an arrangement pitch between the waveguide and the transmitting / receiving element due to thermal expansion due to heat generation, and the thermal conductivity is 200 W / mK, so that it is an electronic component of the waveguide of the present invention. It was a preferred material.

  The waveguide of the present invention and an electronic component using the waveguide are useful as a waveguide and an electronic component for wireless local connection by a transmitting / receiving element in a laminated chip or substrate and a semiconductor chip of a semiconductor three-dimensional mounting.

The base material of the waveguide of this invention is a schematic diagram which shows an example of a dielectric material base material. The base material of the waveguide of this invention is a schematic diagram which shows an example of a conductor base material. The schematic diagram which shows an example of the cross-section of the waveguide of this invention. The schematic diagram which shows the other cross-section of the waveguide of this invention. The figure which shows an example of the waveguide shape of the waveguide of this invention. The figure which shows an example of the base-material surface structure of the waveguide of this invention. The figure which shows an example of the center part structure of the waveguide of this invention. The figure which shows an example of the coating layer structure of the waveguide of this invention. The figure which shows an example of the cross-section of the electronic component using the waveguide of this invention. The schematic diagram which shows an example of a structure of the electronic component using the waveguide of this invention. The schematic diagram which shows the structure by which the waveguide of this invention was formed in the semiconductor chip. The schematic diagram which shows the structure with which the waveguide of this invention respond | corresponds to a pair of transmission / reception element. The figure which shows an example of the base-material surface structure of the waveguide of this invention. It is a high-resolution transmission electron microscope image of the cross section of the electromagnetic wave absorption layer of the waveguide of the present invention. It is the field emission scanning electron microscope image which observed the surface of the electromagnetic wave absorption layer of the waveguide of this invention. FIG. 16 is a schematic diagram of FIG. 15. The schematic diagram which shows the state of the electromagnetic waves near a transmission / reception element. The schematic diagram which shows the state of the electromagnetic waves near the transmission / reception element by the conventional shield structure. The schematic diagram which shows the state of the electromagnetic waves near the transmission / reception element at the time of providing the waveguide of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Electromagnetic wave of transmission / reception signal 1 'Electromagnetic reflection wave of electromagnetic wave of transmission / reception signal 2 Electromagnetic wave from adjacent inductor 2' Electromagnetic wave reflection from adjacent inductor 3 Electromagnetic wave from outside 3 'Electromagnetic wave reflection from outside 4 Shield structure 10 Transmission / reception Element (transmitting inductor)
11 Transceiver (Receiving Inductor)
12 Transmission / Reception Element 13a Semiconductor Circuit Group 13b Semiconductor Circuit Group 13c Semiconductor Circuit Group 14 Semiconductor Chip (1)
15 Semiconductor chip (2)
16 Semiconductor chip (3)
20 Waveguide hole 25 Waveguide
DESCRIPTION OF SYMBOLS 30 Dielectric base material 35 Conductor base material 40 Circuit wiring 50 Dielectric 100 Conductor layer 200 Dielectric layer 300 Electromagnetic wave absorption layer 301 Microcluster 400 Covering layer

Claims (8)

A dielectric substrate having a through hole or a non-through hole;
A conductor layer provided on the inner wall of the through hole or non-through hole;
A dielectric layer provided on the inner wall of the conductor layer;
An electromagnetic wave absorbing layer provided on the inner wall of the dielectric layer. A conductor substrate having through holes formed thereon;
A dielectric layer provided on the inner wall of the through hole;
An electromagnetic wave absorbing layer provided on the inner wall of the dielectric layer.   The waveguide according to claim 1, wherein the conductor is a nonmagnetic metal.   The waveguide according to any one of claims 1 to 3, wherein the electromagnetic wave absorbing layer is a layer having a thickness of 5 to 200 nm including a metal material or conductive ceramics.   Furthermore, it has a coating layer on the surface of the said base material, The waveguide in any one of the Claims 1 thru | or 4 characterized by the above-mentioned.   The waveguide according to claim 5, wherein the coating layer is made of an adhesive, an adhesive, or a gel substance.   7. An electronic component, wherein the waveguide according to claim 1 is disposed between a plurality of semiconductor chips or circuit boards on which transmission / reception elements are mounted.   An electronic component, wherein the waveguide according to claim 1 is provided on a base material of a semiconductor chip or a circuit board on which a transmitting / receiving element is mounted.

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