JP2008153500A - Solid-state imaging apparatus and camera - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus and camera in which the sensitivity reduction can be suppressed to a terminal pixel on a light receiving plane by preventing a light irradiation area from being spread to a removal area of an anti-reflection film up to a terminal area of the light receiving plane. <P>SOLUTION: A plurality of pixels is integrated on a light receiving plane R<SB>LR</SB>, a photodiode is formed separately for each pixel on a semiconductor substrate that becomes the light receiving plane R<SB>LR</SB>and further, a signal reading portion for reading a signal charge generated and accumulated in the photo diode or a voltage corresponding to the signal charge is formed. In such a case, an anti-reflection film is formed while covering a region R<SB>PD</SB>of the photodiode, and in each photodiode region R<SB>PD</SB>, the anti-reflection film is removed by providing a removal area 19a. The arrangement of such a removal area 19a within the photodiode region R<SB>PD</SB>is made different for each pixel. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a solid-state imaging device and a camera, and more particularly to a solid-state imaging device in which pixels having photodiodes on a light receiving surface are arranged in a matrix and a camera including the solid-state imaging device.

  For example, in a solid-state imaging device using a CCD element or a CMOS sensor, light is incident on a photodiode (photoelectric conversion unit) formed on the surface of a semiconductor substrate, and a video signal is obtained by signal charges generated by the photodiode. It has a configuration.

  In the CCD element, for example, a photodiode is provided for each pixel arranged in a two-dimensional matrix on the light receiving surface, and signal charges generated and accumulated in each photodiode at the time of light reception are transmitted by a CCD vertical transfer path and a horizontal transfer path. It is configured to transfer and read.

  In the CMOS sensor, for example, a photodiode is provided for each pixel arranged in a two-dimensional matrix on the light receiving surface in the same manner as the CCD sensor, and the signal charge generated and accumulated in each photodiode during light reception is stored in the CMOS circuit. Is transferred to an impurity diffusion layer called floating diffusion, and the signal charge is converted into a signal voltage and read.

FIG. 10 is a schematic plan view showing the arrangement of photodiodes on the light receiving surface of a solid-state imaging device according to a conventional example.
For example, in the photodiode region R _PD of the light receiving surface R _LR, n-type charge accumulation layer and its surface layer of the p ⁺ -type surface layer is formed for each pixel on the p-well region of the semiconductor substrate, a photodiode is formed by pn junction ing.
Regions other than the photodiode region R _PD is formed light-shielding film that blocks incident light as a light shielding region R _SD is, in its lower, for example, other isolation layer partitioning the pixels, CCD transfer in the CCD A CMOS circuit or the like is provided in each CMOS sensor.

Further, in order to prevent light incident on the photodiode from being reflected on the surface of the silicon substrate, an antireflection film is formed so as to cover the photodiode in each photodiode region _RPD .
As a material for the antireflection film, for example, a silicon nitride film having a refractive index lower than that of silicon and higher than that of a silicon oxide film that is an interlayer insulating film formed thereon is used.
In the solid-state imaging device described above, in order to obtain the maximum antireflection effect is to form an antireflection film over the contributing photodiode region P _PD entire photoelectric conversion.

On the other hand, it is known that dark current, which is one of important characteristics of a solid-state imaging device, can be reduced by terminating a dangling bond of silicon by, for example, hydrogen treatment (sintering).
Here, when the antireflection film is formed over the entire surface of the photodiode region _PPD as described above, the supply of hydrogen to the silicon region causing the dark current is hindered, and the dark current increases. It will end up.

  In response to the above problem, Patent Document 1 discloses a technique for providing hydrogen by providing a removal region in a silicon nitride film below a CCD transfer gate of a CCD element.

  Patent Document 2 discloses a technique for reducing dark current by providing a removal region in a light receiving portion of a silicon nitride film used as an etching stopper in a CMOS sensor or the like.

  Patent Document 3 discloses a technique for reducing dark current by providing a removal region in a silicon nitride film in a photodiode region of a CCD element. By providing the removal region in the photodiode region, termination processing of dangling bonds in the photodiode region, which is considered to contribute greatly to the dark current, is promoted, and the dark current can be further reduced.

As described above, when the removal region of the silicon nitride film is arranged in the photodiode region, it is generally arranged in a symmetrical shape in the photodiode region. That is, regardless of the location of the light receiving surface, a pair of striped removal regions _RH are provided at the left and right ends of each photodiode region _{RPD in} the example shown in FIG. It was.
Japanese Patent No. 3070513 JP 2004-165236 A JP-A-2005-33110

However, when arranging a removal region of the silicon nitride film as described in Patent Document 3 in the photodiode region, for example of the layout in which a pair of stripe-shaped removal region R _H on the left and right ends of the photodiode region R _PD In this case, in the pixel at the center of the light receiving surface, the light irradiation region R _LT is positioned at the substantially central portion of the photodiode region R _PD , but at the pixel at the end of the light receiving surface, the pixel is separated from the center of the light receiving surface. due to the irradiation region R _LT of light in the direction coming off the center of the photodiode region R _PD, actually proportions irradiation region R _LT of focused light being it takes the removal region R _H is received There is a problem that the pixel at the end of the surface becomes higher and the pixel closer to the end of the light receiving surface has a lower antireflection efficiency and lowers sensitivity.

  The problem to be solved is that in the solid-state imaging device, the antireflection efficiency is lowered and the sensitivity is lowered at a pixel near the end of the light receiving surface.

  The solid-state imaging device of the present invention is a solid-state imaging device in which a plurality of pixels are integrated on a light-receiving surface, the photodiode formed by being divided for each of the pixels on a semiconductor substrate serving as the light-receiving surface, and the semiconductor A signal reading unit formed on a substrate for reading a signal charge generated and accumulated in the photodiode or a voltage corresponding to the signal charge; and an antireflection film formed so as to cover a region of the photodiode. In each photodiode region, a removal region from which the antireflection film is removed is provided, and the arrangement of the removal region in the photodiode region differs depending on the pixel.

  In the solid-state imaging device of the present invention, a plurality of pixels are integrated on the light receiving surface, and a photodiode is formed for each pixel on a semiconductor substrate serving as the light receiving surface, and further generated and stored in the photodiode. A signal reading unit for reading the signal charge or a voltage corresponding to the signal charge is formed. Here, an antireflection film is formed so as to cover the photodiode region, a removal region is provided in each photodiode region, and the antireflection film is removed. The arrangement of the removal region is different depending on the pixel.

  The camera according to the present invention includes a solid-state imaging device in which a plurality of pixels are integrated on a light-receiving surface, an optical system that guides incident light to an imaging unit of the solid-state imaging device, and signal processing that processes an output signal of the solid-state imaging device The solid-state imaging device includes a photodiode formed on the semiconductor substrate serving as the light-receiving surface for each pixel, and formed on the semiconductor substrate and generated and accumulated in the photodiode. A signal reading unit that reads a signal charge or a voltage corresponding to the signal charge; and an antireflection film formed so as to cover the region of the photodiode, and the antireflection film is removed in each photodiode region. The removed region is provided, and the arrangement of the removed region in the photodiode region differs depending on the pixel.

  The camera according to the present invention includes a solid-state imaging device in which a plurality of pixels are integrated on a light receiving surface, an optical system that guides incident light to an imaging unit of the solid-state imaging device, and signal processing that processes an output signal of the solid-state imaging device. The solid-state imaging device has a circuit as described above.

  In the solid-state imaging device of the present invention, the light receiving surface is divided into a plurality of regions, and in each region, the light irradiation region in the photodiode region shifts from the center to the end of the light receiving surface. By setting the removal area of the antireflection film by shifting in the opposite direction, it is possible to prevent the light irradiation area from being applied to the removal area from the center to the edge area of the light receiving surface. In the apparatus, it is possible to suppress a decrease in sensitivity due to a decrease in antireflection efficiency at a pixel near the end of the light receiving surface.

  The camera of the present invention can suppress a decrease in sensitivity due to a decrease in the antireflection efficiency at a pixel near the end of the light receiving surface in the solid-state imaging device mounted on the camera.

  Hereinafter, embodiments of a solid-state imaging device according to the present invention and a camera including the solid-state imaging device will be described with reference to the drawings.

First Embodiment FIG. 1 is a schematic plan view of a light receiving surface of a CCD image pickup device, which is a solid-state image pickup device according to this embodiment, in which a plurality of pixels are integrated.
For example, in the photodiode region R _PD of the light receiving surface R _LR, n-type charge accumulation layer and its surface layer of the p ⁺ -type surface layer is formed for each pixel on the p-well region of the semiconductor substrate, a photodiode is formed by pn junction ing.
Regions other than the photodiode region R _PD is formed light-shielding film that blocks incident light as a light shielding region R _SD is, in its lower, for example, other isolation layer partitioning the pixels, CCD transfer in the CCD A CMOS circuit or the like is provided in each CMOS sensor.

Further, in order to prevent light incident on the photodiode from being reflected on the surface of the silicon substrate, the photodiode is covered in each photodiode region _RPD , and the light shielding region _RSD is entirely covered with, for example, silicon. In addition, an antireflection film made of a silicon nitride film or the like having a low refractive index and a refractive index higher than that of a silicon oxide film that is an interlayer insulating film formed thereon is formed.

The antireflection film is provided with a removal region 19a serving as a hydrogen supply path in hydrogen treatment (sintering) for reducing dark current.
In the present embodiment, the arrangement of the removal region 19a in the photodiode region _{R PD} are different by the pixel, for example, the light receiving surface _{R LR} is a plurality of areas (drawings on the four areas A11, A12, A21, A22) ) are divided into, for each said segmented region (A11, A12, A21, A22), are different from the position of the removal region 19a in the photodiode region _{R PD.}

More specifically, the position of the removal region in the photodiode region is set to a position close to the center of the light receiving surface in the photodiode region. Specifically, the region on the upper left as viewed from the center CP of the light receiving surface in the drawing. in the photodiode in the A11 is located close to the center of the light receiving surface of the photodiode region R _PD, removed regions 19a in the lower right portion is formed.

Similarly, in the photodiode when viewed from the center CP of the drawings on the light receiving surface in the upper right of the region A12, the lower left portion is located closer to the center of the light receiving surface of the photodiode region R _PD, photo in the lower left region A21 in the diode, to the upper right portion is located closer to the center of the light receiving surface of the photodiode region R _PD, the photodiodes in the area A22 of the lower right position near the center of the light receiving surface of the photodiode region R _PD A removal region 19a is formed in the upper left part.

FIG. 2 is a schematic cross-sectional view of the solid-state imaging device according to the present embodiment, and particularly shows a cross-section of a CCD element.
For example, ap ⁺ type isolation region 11 for dividing each pixel is formed in the p well region 10 of the semiconductor substrate, and an n type charge storage layer 12 and a surface p ⁺ type surface layer 13 are formed in each pixel region. A photodiode is formed by the pn junction.
Further, for example, in a region adjacent to the photodiode, a CCD vertical transfer path is formed by the p-type semiconductor region 14 and the n-type semiconductor region 15 in the p-well region 10 of the semiconductor substrate.
For example, in the CCD vertical transfer path region, a transfer gate electrode 17 made of polysilicon or the like is formed on a substrate via a gate insulating film 16 made of silicon oxide or the like, and a predetermined clock is supplied to the transfer gate electrode 17. By applying a voltage, a potential is generated in the CCD vertical transfer path, the signal charge generated by the photodiode is transferred to the charge storage layer 12 which is the vertical CCD section, and the vertical transfer is performed in the CCD vertical transfer section. Can do.

In addition, for example, a surface protective film 18 made of silicon oxide is formed on the entire surface of the photodiode region and the CCD vertical transfer path, and an antireflection film 19 made of silicon nitride is further formed thereon.
Here, the antireflection film 19 has a function of reducing the reflection of light to the photodiode region by its refractive index, film thickness or the like, or a surface protective film 18 made of silicon oxide provided below the antireflection film 19. The film can also contribute to the antireflection function.

In the present embodiment, for example, the removal region 19a is provided in the antireflection film 19 in each photodiode region, and the arrangement of the removal region 19a in the photodiode region differs depending on the pixel as described above.
Further, for example, as described above, the light receiving surface is divided into a plurality of regions, and the position of the removal region 19a in the photodiode region is different for each of the divided regions, and the position of the removal region is within the photodiode region. Is set near the center of the light receiving surface.

Further, for example, a light shielding film 20 made of metal is formed on the antireflection film 19 so as to cover the area of the transfer gate electrode 17 except for the photodiode area.
Further, for example, a planarization insulating film 21 made of silicon oxide or the like and having a planarized surface is formed on the entire surface so as to cover the light shielding film 20 and the photodiode region, and green (G), red ( R) or blue (B) three color filters (22a, 22b, 22c) are formed for each pixel.
Further, for example, a microlens 23 is formed for each pixel on the color filter (22a, 22b, 22c).

FIG. 3 is a schematic plan view of a light receiving surface showing an irradiation region R _LT when light enters the photodiode of each pixel in the solid-state imaging device according to the present embodiment.
As shown in FIG. 3, in the pixel at the center of the light receiving surface R _LR , the light irradiation region R _LT is located at the substantially center of the photodiode region R _PD , but at the pixel at the end of the light receiving surface R _LR , the pixel In the direction away from the center CP of the light receiving surface, the light irradiation region _RLT is shifted from the center of the photodiode region _RPD .

In the solid-state imaging device of the present embodiment, the arrangement of the removal region 19a of the antireflection film 19 differs depending on the pixels as described above, and in particular, the light receiving surface _RLR is in a plurality of regions (A11, A12, A21, A22). The position of the removal region 19a in the photodiode region is different for each of the divided regions, and the position of the removal region 19a is set to a position close to the center CP of the light receiving surface in the photodiode region _RPD . Therefore, as described above, even if the light irradiation region R _LT is shifted from the center of the photodiode region R _PD in the pixel at the end of the light receiving surface R _LR , the irradiation region R _LT is removed from the antireflection film 19 by the removal region 19a. Sensitivity due to a decrease in antireflection efficiency at a pixel near the end of the light receiving surface _RLR in the solid-state imaging device. The decrease can be suppressed.

In the solid-state imaging device of the present embodiment, the removal region 19a is sufficiently small in the light energy intensity is sufficiently small position in the irradiation region R _LT light, and the size of the hydrogen supply is made sufficiently to reduce the dark current , the area of the removal region 19a is, for example, 5 to 10% of the area of the photodiode _{R PD.}

  In the solid-state imaging device according to the present embodiment, the silicon nitride film constituting the antireflection film is formed on the entire surface except for the removal region provided in the photodiode region, that is, the silicon nitride film is entirely formed in the light shielding region. Since the film is left, there is an effect that the breakdown voltage characteristic can be improved.

Next, a method for manufacturing the solid-state imaging device according to the present embodiment will be described with reference to the drawings.
First, as shown in FIG. 4A, for example, ap ⁺ type isolation region 11 for dividing each pixel is formed in a p well region 10 of a semiconductor substrate.
Next, for example, in the photodiode region _RPD of each pixel, the n-type charge storage layer 12 and the p ⁺ -type surface layer 13 on the surface thereof are formed to form a photodiode having a pn junction. In the transfer path region _RTR adjacent to the p-type semiconductor region, a p-type semiconductor region 14 and an n-type semiconductor region 15 are formed in the p-well region 10 of the semiconductor substrate to form a CCD vertical transfer path.

Next, for example, a silicon oxide film is formed on the substrate by a CVD (chemical vapor deposition) method or a thermal oxidation method, and a conductive layer such as polysilicon is deposited on the upper layer by a CVD method. Thus, the gate insulating film 16 and the transfer gate electrode 17 are formed in the region of the CCD vertical transfer path.
Next, silicon oxide is deposited on the entire surface of the transfer gate electrode 17 in the photodiode region and the CCD vertical transfer path, for example, by the CVD method to form the surface protective film 18.

  Next, as shown in FIG. 4B, an antireflection film 19 is formed by depositing silicon nitride on the entire surface of the surface protection film 18 in the photodiode region and the CCD vertical transfer path by, eg, CVD. To do.

Next, as shown in FIG. 5A, a metal such as aluminum is deposited by, for example, a sputtering method, and a portion deposited in the photodiode region by a photolithography process is removed to form a light shielding film 20.
Next, the removal region 19a of the antireflection film 19 is removed by etching at a predetermined position in the photodiode region, for example, by a photolithography process.
The p position of the removal region 19a is determined according to the arrangement of the pixels in the light receiving surface. For example, the light receiving surface _RLR is _divided into a plurality of regions (A11, A12, A21, A22) and For example, it is set at a position close to the center CP of the light receiving surface in the photodiode region _RPD .

Next, as shown in FIG. 5 (b), silicon oxide such as BPSG (Boro-Phospho-Silicate Glass) is deposited on the entire surface by CVD or the like, and planarization treatment such as reflow or CMP (Chemical Mechanical Polishing) is performed. To form the planarization insulating film 21.
For example, after the above planarization step, hydrogen treatment (sintering) using hydrogen or a mixed gas of hydrogen and nitrogen is performed to terminate the dangling bonds at the silicon interface with hydrogen. The hydrogen treatment can be performed at an earlier stage or a later stage.

  Next, for example, three color filters (22a, 22b, and 22c) of green (G), red (R), and blue (B) are formed on the upper surface of the planarization insulating film 21 for each pixel. Further, by forming the microlens 23 for each pixel on the upper layer of the color filter (22a, 22b, 22c), the solid-state imaging device according to this embodiment shown in FIGS. 1 and 2 can be manufactured.

  According to the method for manufacturing the solid-state imaging device of the present embodiment, the light receiving surface is divided into a plurality of regions, and in each region, the light irradiation region in the photodiode region shifts from the center to the end of the light receiving surface. For example, by forming the removal region of the antireflection film by shifting it in the direction opposite to the direction of travel, it is possible to prevent the light irradiation region from being applied to the removal region from the center to the end region of the light receiving surface, As a result, it is possible to manufacture a solid-state imaging device that can suppress a decrease in sensitivity due to a decrease in antireflection efficiency at pixels near the end of the light receiving surface in the solid-state imaging device.

Second Embodiment FIG. 6 is a schematic plan view of a light receiving surface of a solid-state imaging device according to this embodiment.
In the present embodiment, the light receiving surface _RLR is divided into two regions (A1, A2), and the position of the removal region 19a in the photodiode region _RPD is determined for each of the divided regions (A1, A2). Is different.
For example, the position of the removal region in the photodiode region is set to a position close to the center CP of the light receiving surface in the photodiode region, and specifically, the region A1 above the center CP of the light receiving surface in the drawing. in the photodiode of the inner photodiodes are located close to the center CP of the light receiving surface in the region R _PD, downward removal region 19a is formed, whereas, as viewed from the center CP of the drawings on the light receiving surface area A2 of the lower In the photodiode in FIG. 2, a removal region 19a is formed above the light receiving surface in the photodiode region _RPD , which is close to the center CP.

FIG. 7 is a schematic plan view of the light receiving surface of the solid-state imaging device according to the present embodiment.
Placement of the removal region 19a in the photodiode region _{R PD} are different by the pixel, for example, the light receiving surface _{R LR} are divided into areas of 3 × 3 = 9, the segmented region (A11, A12, A13 , A21, A22, A23, A31 , A32, A33) each have different positions of the removal region 19a in the photodiode region _{R PD.}

For example, the position of the removal region in the photodiode region is set to a position close to the center of the light receiving surface in the photodiode region, and specifically, in the upper left region A11 when viewed from the center CP of the light receiving surface in the drawing. photo in diode, is located close to the center CP of the light receiving surface of the photodiode region R _PD, removed regions 19a in the lower right portion is formed in the.

Similar to the above, in the photodiode when viewed from the center CP of the drawings on the light receiving surface in the area A12 on the central, formed in a central lower portion which is located close to the center of the light receiving surface of the photodiode region R _PD, drawings The photodiode in the upper right region A13 when viewed from the center CP of the upper light receiving surface is formed in the lower left part, which is a position close to the center CP of the light receiving surface in the photodiode region _RPD . Thereafter, in the same manner for the region (A21, A23, A31, A32 , A33), located in the removal region 19a is disposed closer to the center CP of the light receiving surface of the photodiode region _{R PD.}

On the other hand, in the region A22 including the center CP of the light receiving surface, the light irradiation region in the photodiode region is located at the center of the photodiode region. The removal regions (19a ₁ , 19a ₂ ) can be provided in a divided and symmetrical arrangement.
Alternatively, the region A22 including the center CP of the light receiving surface is further divided into a plurality of regions at the boundary including the center CP of the light receiving surface, and in each region, the region A22 is defined as the center CP of the light receiving surface in the photodiode region. You may make it provide a removal area | region in the near position.

In the solid-state imaging device of the present embodiment, the arrangement of the removal region 19a of the antireflection film 19 differs depending on the pixels as described above, and in particular, the light receiving surface _RLR is _divided into a plurality of regions. for each region, different positions of the removal region 19a in the photodiode area, the position of the removal region 19a is because it is set at a position close to the center CP of the light-receiving surface in the photodiode region R _PD, the light receiving surface R _LR Even if the light irradiation region R _LT is shifted from the center of the photodiode region R _{PD in} the end pixel, it is possible to prevent the irradiation region R _LT from covering the removal region 19 a of the antireflection film 19, thereby solid-state imaging. In the apparatus, it is possible to suppress a decrease in sensitivity due to a decrease in antireflection efficiency at a pixel near the end of the light receiving surface _RLR .

Third Embodiment FIG. 8 is a schematic plan view of a part of a light receiving surface of a solid-state imaging device according to the present embodiment.
In the present embodiment, the position of the removal region 19a in the photodiode region R _PD is, the more photodiodes farther pixel the photodiode from the receiving surface center CP, the center CP of the light-receiving surface in the photodiode region R _PD It is set to a close position.
For each pixel, by a pattern as it will shift gradually removed regions 19a, even if the beam spot of light in the pixel of the end of the light receiving surface R _LR is been displaced from the center of the photodiode region R _PD, the irradiation region It is possible to effectively prevent R _{LT from} being applied to the removal region 19 a of the antireflection film 19.

Fourth Embodiment FIG. 9 is a schematic configuration diagram of a camera according to the present embodiment.
A solid-state imaging device 50 in which a plurality of pixels are integrated, an optical system 51, and a signal processing circuit 53 are provided.
In the present embodiment, the solid-state imaging device 50 includes the solid-state imaging device according to any one of the first to third embodiments.

The optical system 51 forms image light (incident light) from the subject on the imaging surface of the solid-state imaging device 50. Thereby, in the photodiode which comprises each pixel on the imaging surface of the solid-state imaging device 50, it converts into a signal charge according to incident light quantity, and the corresponding signal charge is accumulate | stored for a fixed period.
The accumulated signal charge is taken out as an output signal Vout through, for example, a CCD charge transfer path.
The signal processing circuit 53 performs various signal processing on the output signal Vout of the solid-state imaging device 50 and outputs it as a video signal.
According to the camera of the present embodiment, color shading characteristics and spectral characteristics can be improved without causing a decrease in light collection rate and sensitivity of oblique incident light, and a microlens is formed by a simple method and process. It is possible.

The present invention is not limited to the above description.
For example, although the CCD solid-state imaging device has been described in the embodiment, the present invention is not limited to this, but can be applied to other solid-state imaging devices such as a CMOS sensor. In this case, the configuration for reading charges is a CMOS. It consists of transistors.
In each of the above embodiments, the removal area is shown as a rectangular area, but the present invention is not limited to this and may be a circular shape or other shapes. In particular, as the pixels become finer, the shape of the removal region is crushed and becomes a round shape.
Also, hydrogen treatment (sintering) using hydrogen or a mixed gas of hydrogen and nitrogen for hydrogen termination of dangling ring bonds at the silicon interface is performed after the planarization insulating film is formed as described above. This timing can be implemented at any timing after the step of forming the silicon nitride antireflection film, or at an earlier stage or later stage. However, in the case of a process including a reflow process, it is preferable to perform the process after that.
In addition, various modifications can be made without departing from the scope of the present invention.

The solid-state imaging device of the present invention can be applied to a solid-state imaging device mounted on a CCD camera or a CMOS camera.
The camera of the present invention can be applied to a camera equipped with a solid-state imaging device such as a CCD camera or a CMOS camera.

FIG. 1 is a schematic plan view of a light receiving surface of the solid-state imaging device according to the first embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of the solid-state imaging device according to the first embodiment of the present invention. FIG. 3 is a schematic plan view of a light receiving surface showing an irradiation area when light enters the photodiode of each pixel in the solid-state imaging device according to the first embodiment of the present invention. 4A and 4B are cross-sectional views illustrating the manufacturing process of the method for manufacturing the solid-state imaging device according to the first embodiment of the present invention. FIG. 5A and FIG. 5B are cross-sectional views illustrating manufacturing steps of the method for manufacturing the solid-state imaging device according to the first embodiment of the present invention. FIG. 6 is a schematic plan view of the light receiving surface of the solid-state imaging device according to the second embodiment of the present invention. FIG. 7 is a schematic plan view of the light receiving surface of the solid-state imaging device according to the second embodiment of the present invention. FIG. 8 is a plan view of a part of the light receiving surface of the solid-state imaging device according to the third embodiment of the present invention. FIG. 9 is a schematic configuration diagram of a camera according to the fourth embodiment of the present invention. FIG. 10 is a schematic plan view of a light receiving surface of a solid-state imaging device according to a conventional example.

Explanation of symbols

10 ... p well region, 11 ... p ⁺ type isolation region, 12 ... n type charge storage layer, 13 ... p ⁺ type surface layer, 14 ... p type semiconductor region, 15 ... n type semiconductor region, 16 ... gate insulating film, 17 ... transfer gate electrode, 18 ... surface protection layer, 19 ... antireflection film, 19a, _19a 1, 19a 2 _... removal region, 20 ... light shielding film, 21 ... flattening insulating film, 22a, 22b, 22c ... color filter, 23 ...... microlens 50 ... solid-state imaging device, 51 ... optical system, 53 ... signal processing circuit, R _{LR ...} light-receiving surface, R _{PD ...} photodiode region, R _{SD ...} light shielding region, R _{LT ...} light irradiation region, R _TR ... transfer path region, CP ... center of light receiving surface

Claims (6)

A solid-state imaging device in which a plurality of pixels are integrated on a light receiving surface,
A photodiode formed by dividing the pixel on the semiconductor substrate to be the light-receiving surface;
A signal reading unit that reads a signal charge formed on the semiconductor substrate and generated and accumulated in the photodiode or a voltage corresponding to the signal charge;
An antireflective film formed to cover the region of the photodiode,
A solid-state imaging device, wherein a removal region from which the antireflection film is removed is provided in each photodiode region, and the arrangement of the removal region in the photodiode region differs depending on the pixel. The solid-state imaging device according to claim 1, wherein the light receiving surface is divided into a plurality of regions, and the position of the removal region in the photodiode region is different for each of the divided regions. The solid-state imaging device according to claim 1, wherein a position of the removal region in the photodiode region is set to a position close to a center of the light receiving surface in the photodiode region. The position of the removal region in the photodiode region is set to a position closer to the center of the light receiving surface in the photodiode region as the photodiode of the pixel where the photodiode is farther from the center of the light receiving surface. Item 2. The solid-state imaging device according to Item 1. The solid-state imaging device according to claim 1, wherein the antireflection film includes silicon nitride. A solid-state imaging device in which a plurality of pixels are integrated on a light receiving surface;
An optical system for guiding incident light to the imaging unit of the solid-state imaging device;
A signal processing circuit for processing an output signal of the solid-state imaging device,
The solid-state imaging device
A photodiode formed by dividing the pixel on the semiconductor substrate to be the light-receiving surface;
A signal reading unit that reads a signal charge formed on the semiconductor substrate and generated and accumulated in the photodiode or a voltage corresponding to the signal charge;
An antireflective film formed to cover the region of the photodiode,
A camera, wherein a removal region from which the antireflection film is removed is provided in each photodiode region, and the arrangement of the removal region in the photodiode region differs depending on the pixel.

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