JP2008140979A - Package-type semiconductor device - Google Patents

Package-type semiconductor device Download PDF

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JP2008140979A
JP2008140979A JP2006325594A JP2006325594A JP2008140979A JP 2008140979 A JP2008140979 A JP 2008140979A JP 2006325594 A JP2006325594 A JP 2006325594A JP 2006325594 A JP2006325594 A JP 2006325594A JP 2008140979 A JP2008140979 A JP 2008140979A
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metal base
system element
base substrate
semiconductor device
power system
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Koichi Kasuya
宏一 粕谷
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Denso Corp
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Denso Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To improve the heat radiating properties of a power element, in a package-type semiconductor device equipped with the power element and a control element that controls this power element. <P>SOLUTION: In the package-type semiconductor device, a metal base substrate 5 is adopted as the wiring substrate of a power element 2, and a ceramic substrate 6 is adopted as the wiring substrate of a control element 3. Then, the ceramic substrate 6 is bonded to the upper side of a heat sink 7, and the metal base substrate 5 is so disposed as to separate it from the ceramic substrate 6; and further, the package-type semiconductor device is sealed with resin 4 so that the surface opposite to the mounting surface of the power element 2 of the metal base substrate 5 is exposed. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、半導体素子を樹脂によってモールドしてなるパッケージ型半導体装置に係り、特に半導体素子としてパワー系素子とこのパワー系素子を制御する制御系素子とを備えたパッケージ型半導体装置に関するものである。   The present invention relates to a package type semiconductor device formed by molding a semiconductor element with a resin, and more particularly to a package type semiconductor device provided with a power element as a semiconductor element and a control element for controlling the power element. .

この種のパッケージ型半導体装置としては、モータなどのアクチュエータを制御するための電子制御ユニット（ＥＣＵ；Electronic Control Unit）が代表的な例として挙げられる。
例えば自動車は、近年、高機能化、高級化の傾向にあり、その進展に伴ってアクチュエータを駆動するシステムが盛んに取り入れられている。そのようなアクチュエータの駆動システムでは、制御が複雑化している関係で、制御系をマイコンで構成している。
一方、この種のアクチュエータ駆動システムでは、小型化の要請が強く、そのために、マイコンを構成するＩＣなどの制御系素子と、パワーＭＯＳ・ＦＥＴやＩＧＢＴなどのパワー系素子とを一体モジュール化することを必要としている。 A typical example of this type of package semiconductor device is an electronic control unit (ECU) for controlling an actuator such as a motor.
For example, in recent years, automobiles have been trending toward higher functions and higher grades, and systems for driving actuators have been actively adopted with the progress. In such an actuator drive system, the control system is constituted by a microcomputer because of complicated control.
On the other hand, in this type of actuator drive system, there is a strong demand for miniaturization. For this reason, a control system element such as an IC constituting a microcomputer and a power system element such as a power MOS / FET or IGBT are integrated into a module. Need.

しかしながら、制御系素子とパワー系素子との一体モジュール化を実現するには、高い放熱性と高密度パッケージという相反する特徴を備えたパッケージ技術が必要となってきている。この要請に応えるパッケージ技術として、例えば特許文献１がある。
この特許文献１に記載されたパッケージ型半導体装置は、ヒートシンクの一面に、２つのセラミック基板からなる配線基板を搭載し、これら配線基板のうち、一方の配線基板の上に制御系素子を実装すると共に、他方の配線基板の上にパワー系素子を実装し、それらヒートシンク、２つの配線基板、制御系素子およびパワー系素子を樹脂により一括にモールドするというものである。
特開２００５−３２８０１５号公報 However, in order to realize the modularization of the control system element and the power system element, a package technology having the contradicting characteristics of high heat dissipation and high density package is required. As a package technology that meets this requirement, there is, for example, Patent Document 1.
In the package type semiconductor device described in Patent Document 1, a wiring board composed of two ceramic substrates is mounted on one surface of a heat sink, and a control system element is mounted on one of the wiring boards. At the same time, a power system element is mounted on the other wiring board, and the heat sink, the two wiring boards, the control system element, and the power system element are collectively molded with resin.
JP 2005-328015 A

特許文献１に記載のものでは、ヒートシンクの素子の実装面とは反対側の面が樹脂から外部に露出するようにしてモールドされているため、ヒートシンクの放熱性という点では改善が見られる。しかしながら、パワー系素子は、制御系素子に比べて発熱量が多いが、ヒートシンクへは、制御系素子と同様に、セラミック基板からなる配線基板を介して伝熱される。このため、制御系素子の放熱性はまだしも、パワー系素子の放熱性の点では、未だ満足のゆくものではない。   In the thing of patent document 1, since the surface on the opposite side to the mounting surface of the element of a heat sink is molded so that it may expose outside from resin, improvement is seen in the point of the heat dissipation of a heat sink. However, the power system element generates a larger amount of heat than the control system element, but heat is transferred to the heat sink through a wiring substrate made of a ceramic substrate, as with the control system element. For this reason, the heat dissipation of the control system element is still not satisfactory in terms of the heat dissipation performance of the power system element.

本発明は上記の事情に鑑みてなされたもので、その目的は、パワー系素子の放熱性にも優れたパッケージ型半導体装置を提供するところにある。   The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a package type semiconductor device that is excellent in heat dissipation of a power element.

本発明は、制御系素子とパワー系素子とを実装する配線基板を分け、パワー系素子の配線基板として熱伝導性に優れたメタルベース基板を採用した。そして、メタルベース基板のパワー系素子が実装された面とは反対側の面を樹脂から外部に露出させるようにモールドした。
この構成によれば、パワー系素子を実装したメタルベース基板そのものをヒートシンクとするので、パワー系素子が発する熱は、メタルベース基板に直接的に伝えられ、大気中へと放出される。また、パワー系素子を実装したメタルベース基板とは別の回路基板に制御系素子を実装するので、パワー系素子が発する熱による制御系素子への悪影響を少なくすることができる。 In the present invention, a wiring board on which a control system element and a power system element are mounted is divided, and a metal base board having excellent thermal conductivity is adopted as the wiring board of the power system element. Then, the metal base substrate was molded so that the surface opposite to the surface on which the power element was mounted was exposed from the resin.
According to this configuration, since the metal base substrate itself on which the power element is mounted is used as a heat sink, the heat generated by the power element is directly transmitted to the metal base substrate and released into the atmosphere. Further, since the control system element is mounted on a circuit board different from the metal base substrate on which the power system element is mounted, adverse effects on the control system element due to heat generated by the power system element can be reduced.

以下、本発明の第１の実施形態を図１〜図４に基づいて説明する。図１は、パッケージ型半導体装置１の全体構成を示す断面図である。このパッケージ型半導体装置１は、半導体素子として、パワー系素子２と、このパワー系素子２を制御する制御系素子３とを備え、これらを樹脂、例えばエポキシ系の樹脂４によりモールドして構成されている。このようなパッケージ型半導体装置は、電子制御ユニット（ＥＣＵ；Electronic Control Unit）として構成され、モータなどのアクチュエータを制御する。   A first embodiment of the present invention will be described below with reference to FIGS. FIG. 1 is a cross-sectional view showing the overall configuration of the package type semiconductor device 1. The package type semiconductor device 1 includes a power system element 2 and a control system element 3 for controlling the power system element 2 as semiconductor elements, which are molded by a resin, for example, an epoxy resin 4. ing. Such a package type semiconductor device is configured as an electronic control unit (ECU) and controls an actuator such as a motor.

パワー系素子２としては、パワーＭＯＳ・ＦＥＴやＩＧＢＴなどが用いられ、そのスイッチング作用によってモータなどのアクチュエータを通断電制御する。制御系素子３としては、例えばマイコンを構成する各種のＩＣやコンデンサなどの電気部品が用いられ、外部からの信号および予め定められたプログラムなどに基づいてパワー系素子２のスイッチングを制御する。   As the power system element 2, a power MOS FET, IGBT, or the like is used, and an actuator such as a motor is controlled to be disconnected by a switching action thereof. As the control system element 3, for example, various electrical components such as various ICs and capacitors constituting the microcomputer are used, and the switching of the power system element 2 is controlled based on an external signal and a predetermined program.

さて、図１に示すように、パワー系素子２と制御系素子３とは、夫々パワー系回路基板５および制御系回路基板６にベアチップ実装され、図２にも示すように、所定の素子は回路基板にワイヤボンディングされている。パワー系回路基板５としては、メタルベース基板が用いられ、制御系回路基板６としては、例えばセラミック基板が用いられている。ここで、以下では、パワー系回路基板５をメタルベース基板５と称し、制御系回路基板６をセラミック基板６と称することとする。   As shown in FIG. 1, the power system element 2 and the control system element 3 are mounted in a bare chip on the power system circuit board 5 and the control system circuit board 6, respectively. As shown in FIG. Wire bonded to the circuit board. As the power system circuit board 5, a metal base board is used, and as the control system circuit board 6, for example, a ceramic substrate is used. Hereinafter, the power circuit board 5 is referred to as a metal base board 5 and the control circuit board 6 is referred to as a ceramic board 6.

さて、両基板５，６のうち、メタルベース基板５は、ベースが鉄、アルミ、銅などの熱伝導性に優れた金属で構成されており、自身がヒートシンクとして機能可能である。セラミック基板６は、メタルベース基板５に比べて熱伝導性が低いので、板状のヒートシンク７上に伝熱性接着剤８により固着されている。   Of the two substrates 5 and 6, the metal base substrate 5 has a base made of a metal having excellent thermal conductivity such as iron, aluminum and copper, and can function as a heat sink. Since the ceramic substrate 6 has a lower thermal conductivity than the metal base substrate 5, the ceramic substrate 6 is fixed on the plate-shaped heat sink 7 with a heat conductive adhesive 8.

パワー系素子２を実装したメタルベース基板５と、ヒートシンク７およびこのヒートシンク７上に接着されたセラミック基板６とは、若干の離間間隔をもって左右に並べるように配置されている。そして、図２にも示すように、メタルベース基板５とセラミック基板６とは、ワイヤボンディングによって互いに接続されている。また、メタルベース基板５上のパワー系素子２、メタルベース基板５およびセラミック基板６は、周囲のリード９にワイヤボンディングされている。   The metal base substrate 5 on which the power system element 2 is mounted, the heat sink 7 and the ceramic substrate 6 bonded on the heat sink 7 are arranged so as to be arranged on the left and right sides with a slight spacing. As shown in FIG. 2, the metal base substrate 5 and the ceramic substrate 6 are connected to each other by wire bonding. The power element 2, the metal base substrate 5, and the ceramic substrate 6 on the metal base substrate 5 are wire bonded to the surrounding leads 9.

以上のようなメタルベース基板５、このメタルベース基板５、ヒートシンク７、このヒートシンク７上に接着されたセラミック基板６は、メタルベース基板５上のパワー系素子２およびセラミック基板６上の制御系素子３と共に、前記樹脂４により一体モールドされてパッケージ化されている。この場合、メタルベース基板５は、パワー系素子２を実装した面（一面）とは反対側の面（他面）が樹脂４から外部に露出するようにモールドされている。   The metal base substrate 5, the metal base substrate 5, the heat sink 7, and the ceramic substrate 6 bonded onto the heat sink 7 are the power element 2 on the metal base substrate 5 and the control element on the ceramic substrate 6. 3 and the resin 4 are integrally molded and packaged. In this case, the metal base substrate 5 is molded such that a surface (other surface) opposite to the surface (one surface) on which the power system element 2 is mounted is exposed from the resin 4 to the outside.

次に、上記パッケージ型半導体装置１の製造方法を図３および図４により説明する。例えば銅の薄板から、図３（ａ）に示す形態のリードフレーム１０をプレスの打ち抜きによって形成する。このリードフレーム１０は、多数のリード９の他に、ヒートシンク７として用いられるアイランドと称される板状部分を一体に有すると共に、小孔１１ａを有した一対の保持片１１を一体に有している。   Next, a method for manufacturing the package type semiconductor device 1 will be described with reference to FIGS. For example, a lead frame 10 having the form shown in FIG. 3A is formed from a thin copper plate by stamping. This lead frame 10 has a plate-like portion called an island used as a heat sink 7 in addition to a large number of leads 9, and a pair of holding pieces 11 having small holes 11a. Yes.

一方、メタルベース基板５およびセラミック基板６に、夫々パワー系素子２および制御系素子３をベアチップ実装しておく。そして、メタルベース基板５を、図３（ｂ−１）に示すように、リードフレーム１０の下側に配置し、メタルベース基板５の長手方向両側に突設された一対の突起５ａを、図３（ｂ−２）に示すようにリードフレーム１０の一対の保持片１１の小孔１１ａにその下側から挿通させる。そして、突起５ａの先端部を図３（ｂ−１）に破線で示すようにかしめることにより、メタルベース基板５をリードフレーム１０に固定する。次いで、図３（ｃ）に示すように、セラミック基板６をアイランド（ヒートシンク７）上に搭載し、接着剤８（図３（ｃ）には図示せず）により接着する。   On the other hand, the power system element 2 and the control system element 3 are bare-chip mounted on the metal base substrate 5 and the ceramic substrate 6, respectively. Then, as shown in FIG. 3 (b-1), the metal base substrate 5 is disposed below the lead frame 10, and a pair of protrusions 5a projecting on both sides in the longitudinal direction of the metal base substrate 5 are illustrated. 3 (b-2), the lead frame 10 is inserted through the small holes 11a of the pair of holding pieces 11 from below. Then, the metal base substrate 5 is fixed to the lead frame 10 by caulking the tip of the protrusion 5a as shown by a broken line in FIG. Next, as shown in FIG. 3C, the ceramic substrate 6 is mounted on the island (heat sink 7), and is adhered by an adhesive 8 (not shown in FIG. 3C).

その後、図４（ａ）に示すように、ワイヤボンディングする。このワイヤボンディングにより、パワー系素子２および制御系素子３のうちの所定の素子がメタルベース基板５またはセラミック基板６にワイヤ接続されると共に、メタルベース基板５とセラミック基板６との間、メタルベース基板５およびセラミック基板６とリードフレーム１０のリード９との間、パワー系素子２とリードフレーム１０のリード９との間が夫々ワイヤ接続される。   Thereafter, wire bonding is performed as shown in FIG. By this wire bonding, predetermined elements of the power system element 2 and the control system element 3 are wire-connected to the metal base substrate 5 or the ceramic substrate 6, and between the metal base substrate 5 and the ceramic substrate 6, the metal base Wire connection is made between the substrate 5 and the ceramic substrate 6 and the lead 9 of the lead frame 10, and between the power system element 2 and the lead 9 of the lead frame 10.

次に、メタルベース基板５およびセラミック基板６を搭載したリードフレーム１０を成形金型装置（図示せず）に移送し、図４（ｂ）に示すように樹脂封止を行う。この樹脂封止は、メタルベース基板５の他面が樹脂４から露出するようにして行う。これにより、メタルベース基板５、このメタルベース基板５上に実装されたパワー系素子２、ヒートシンク（アイランド）７、このヒートシンク７上に接着されたセラミック基板６、このセラミック基板６上に実装された制御系素子３が樹脂４により一体モールドされる。
その後、図４（ｃ）に示すように、リードフレーム１０のリードタイバーをプレスにより切断する。以上により、メタルベース基板５の他面が樹脂パッケージの表面に露出した形態のパッケージ型半導体装置１が形成される。 Next, the lead frame 10 on which the metal base substrate 5 and the ceramic substrate 6 are mounted is transferred to a molding die apparatus (not shown), and resin sealing is performed as shown in FIG. 4B. This resin sealing is performed such that the other surface of the metal base substrate 5 is exposed from the resin 4. As a result, the metal base substrate 5, the power system element 2 mounted on the metal base substrate 5, the heat sink (island) 7, the ceramic substrate 6 bonded on the heat sink 7, and mounted on the ceramic substrate 6. The control system element 3 is integrally molded with the resin 4.
Thereafter, as shown in FIG. 4C, the lead tie bar of the lead frame 10 is cut by a press. As described above, the package type semiconductor device 1 is formed in such a form that the other surface of the metal base substrate 5 is exposed on the surface of the resin package.

このように本実施形態によれば、パワー系素子２をメタルベース基板５の一面上に実装し、メタルベース基板５の他面を樹脂４から外部に露出させるようにして樹脂封止したので、パワー系素子２が発する熱を直接メタルベース基板５に拡散させて直接メタルベース基板５から大気中に放出することができる。このため、パワー系素子２の放熱性（冷却性）にきわめて優れたものとなる。   As described above, according to this embodiment, the power system element 2 is mounted on one surface of the metal base substrate 5, and the other surface of the metal base substrate 5 is exposed to the outside from the resin 4. The heat generated by the power element 2 can be directly diffused into the metal base substrate 5 and directly emitted from the metal base substrate 5 to the atmosphere. For this reason, the heat dissipation (cooling performance) of the power element 2 is extremely excellent.

特に、パワー系素子２の熱を直接メタルベース基板５に伝導拡散できるので、パワー系素子２の急激な発熱に対しても、その熱をメタルベース基板５に拡散させることが可能となる。
更に、メタルベース基板５の他面は外部に露出されているので、放熱性に優れることは勿論であるが、パッケージ型半導体装置１をアルミなどの金属板に接触させるように配設することによって、メタルベース基板５の熱を空気ではなく、熱伝達性に優れる金属板に伝達できるので、より一層のパワー系素子２の放熱性の向上を図ることができる。
また、制御系素子３を実装したセラミック基板６のヒートシンク７は、メタルベース基板５とは別体のもので且つメタルベース基板５から離されているので、メタルベース基板６の熱が伝達されて制御系素子３に悪影響を及ぼすといった不具合を生ずることがない。 In particular, since the heat of the power system element 2 can be directly conducted and diffused to the metal base substrate 5, the heat can be diffused to the metal base substrate 5 even when the power system element 2 suddenly generates heat.
Further, since the other surface of the metal base substrate 5 is exposed to the outside, it is of course excellent in heat dissipation, but by disposing the package type semiconductor device 1 so as to contact a metal plate such as aluminum. Since the heat of the metal base substrate 5 can be transmitted not to air but to a metal plate having excellent heat transfer properties, the heat dissipation of the power element 2 can be further improved.
Further, since the heat sink 7 of the ceramic substrate 6 on which the control system element 3 is mounted is separate from the metal base substrate 5 and is separated from the metal base substrate 5, the heat of the metal base substrate 6 is transmitted. There is no problem of adversely affecting the control system element 3.

図５は、本発明の第２の実施例を示すもので、これは、メタルベース基板５を複数枚、例えば２枚にして互いに所定間隔だけ離して配置した構成のものである。このようにすれば、パワー系素子２の数を増加させ、或いは、メタルベース基板５やパワー系素子２によりアクチュエータに供給する電力を増加させることが可能となる。   FIG. 5 shows a second embodiment of the present invention, which has a configuration in which a plurality of, for example, two metal base substrates 5 are arranged at a predetermined distance from each other. In this way, it is possible to increase the number of power elements 2 or increase the power supplied to the actuator by the metal base substrate 5 or the power elements 2.

なお、本発明は上記し且つ図面に示す実施形態に限定されるものではなく、以下のような変更或いは拡張が可能である。
樹脂４は、エポキシ系に限られない。
制御系回路基板６は、セラミック基板に限られず、他にガラスエポキシ基板を使用することも考えられる。
メタルベース基板５の他面を外部に露出させる形態としては、メタルベース基板５の多面を樹脂４の外面と面一とする形態に限られず、メタルベース基板５の他面側を樹脂４かた突出させるようにする形態であっても良い。 The present invention is not limited to the embodiment described above and shown in the drawings, and the following modifications or expansions are possible.
The resin 4 is not limited to an epoxy type.
The control system circuit board 6 is not limited to a ceramic substrate, and a glass epoxy board may be used instead.
The form in which the other surface of the metal base substrate 5 is exposed to the outside is not limited to a form in which multiple surfaces of the metal base substrate 5 are flush with the outer surface of the resin 4. The form which makes it protrude may be sufficient.

本発明の第１の実施形態を示すパッケージ型半導体装置の縦断面図1 is a longitudinal sectional view of a package type semiconductor device showing a first embodiment of the present invention; 同横断面図Cross section パッケージ型半導体装置の製造工程を示す図（その１）The figure which shows the manufacturing process of a package type semiconductor device (the 1) パッケージ型半導体装置の製造工程を示す図（その２）Drawing which shows a manufacturing process of a package type semiconductor device (the 2) 本発明の第２の実施形態を示す図２相当図FIG. 2 equivalent view showing the second embodiment of the present invention

符号の説明Explanation of symbols

図中、１はパッケージ型半導体装置、２はパワー系素子、３は制御系素子、４は樹脂、５はメタルベース基板（パワー系回路基板）、６はセラミック基板（制御系回路基板）、７はヒートシンク、８は接着剤、９はリード、１０はリードフレーム、１１は保持片である。   In the figure, 1 is a package type semiconductor device, 2 is a power system element, 3 is a control system element, 4 is a resin, 5 is a metal base substrate (power system circuit board), 6 is a ceramic substrate (control system circuit board), 7 Is a heat sink, 8 is an adhesive, 9 is a lead, 10 is a lead frame, and 11 is a holding piece.

Claims (1)

パワー系素子と、このパワー系素子を制御する制御系素子とを樹脂によりモールドするパッケージ型半導体装置において、
ヒートシンクと、
このヒートシンク上に搭載された制御系回路基板と、
メタルベース基板からなり、前記ヒートシンクから離して配置されたパワー系回路基板と
を備え、
前記制御系素子は前記制御系回路基板に実装されている共に、前記パワー系素子は前記パワー系回路基板に実装され、
且つ、前記ヒートシンク、前記制御系回路基板、前記制御系素子、前記パワー系回路基板、前記パワー系素子は、前記パワー系回路基板の両面のうち前記パワー系素子が実装された面とは反対側の面が外部に露出するように、樹脂によってモールドされていることを特徴とするパッケージ型半導体装置。 In a package type semiconductor device in which a power system element and a control system element for controlling the power system element are molded with resin,
A heat sink,
A control circuit board mounted on the heat sink;
A power base circuit board, which is made of a metal base substrate and arranged away from the heat sink,
The control system element is mounted on the control system circuit board, and the power system element is mounted on the power system circuit board,
The heat sink, the control system circuit board, the control system element, the power system circuit board, and the power system element are opposite to the surface on which the power system element is mounted, on both sides of the power system circuit board. A package type semiconductor device, which is molded with a resin so that the surface thereof is exposed to the outside.
JP2006325594A 2006-12-01 2006-12-01 Package-type semiconductor device Pending JP2008140979A (en)

Priority Applications (1)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013229369A (en) * 2012-04-24 2013-11-07 Denso Corp Mold package
CN103515328A (en) * 2012-06-29 2014-01-15 三星电机株式会社 Semiconductor package
JP2014090136A (en) * 2012-10-31 2014-05-15 Sanken Electric Co Ltd Semiconductor device and manufacturing method of the same

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Publication number Priority date Publication date Assignee Title
JP2003100986A (en) * 2001-09-26 2003-04-04 Toshiba Corp Semiconductor device
JP2005332918A (en) * 2004-05-19 2005-12-02 Denso Corp Electronic apparatus

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Publication number Priority date Publication date Assignee Title
JP2003100986A (en) * 2001-09-26 2003-04-04 Toshiba Corp Semiconductor device
JP2005332918A (en) * 2004-05-19 2005-12-02 Denso Corp Electronic apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013229369A (en) * 2012-04-24 2013-11-07 Denso Corp Mold package
CN103515328A (en) * 2012-06-29 2014-01-15 三星电机株式会社 Semiconductor package
JP2014090136A (en) * 2012-10-31 2014-05-15 Sanken Electric Co Ltd Semiconductor device and manufacturing method of the same

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