JP2008130875A - Semiconductor light-emitting device, and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device which is excellent in a light-emitting efficiency and mass productivity and uses a transparent insulating substrate whose flip chip bonding can be easily made, and to provide its manufacturing method. <P>SOLUTION: The semiconductor light-emitting device is constructed in a manner such that a first semiconductor layer (14) , an active layer (16), and a second semiconductor layer (18) which is an opposite conductive type to the first semiconductor layer are located on the surface of the transparent insulating substrate (12) having a first cutout portion (20) communicating from the surface side to the back side on the side, and an n-side contact electrode (22) located on the first semiconductor layer and a first electrode (32) located on the back of the transparent insulating substrate are electrically connected through a first connection portion (30) positioned on the first cutout portion, thereby, the first semiconductor layer and the first electrode are electrically connected, and a p-side contact electrode (34) electrically connected with the second semiconductor layer and a second electrode (36) are located on the second semiconductor layer. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor light emitting device and a manufacturing method thereof, and more particularly to a semiconductor light emitting device using a transparent insulating substrate such as sapphire and a manufacturing method thereof.

Gallium nitride (GaN) is attracting attention as a material for light-emitting diodes that emit blue light. This GaN-based semiconductor light-emitting device is generally manufactured by epitaxially growing a GaN-based semiconductor on the surface of an insulating substrate such as sapphire (Al ₂ O ₃ ). Thus, since an insulating substrate is used in the GaN-based semiconductor light-emitting device, an electrode cannot be provided on the back surface of the substrate, and both the p-side electrode and the n-side electrode are provided on the substrate surface epitaxially grown. The GaN-based semiconductor refers to a semiconductor such as AlGaN that is a mixed crystal of GaN or GaN and AlN (aluminum nitride), or InGaN that is a mixed crystal of GaN and InN (indium nitride).

Various techniques for extracting one electrode from the back surface of the substrate of the GaN-based semiconductor light emitting device have been developed. Patent Document 1 discloses a technique in which a wiring film is provided on the side surface and the back surface of a GaN-based semiconductor light emitting device, and one electrode provided on the substrate surface is taken out from the substrate back surface through the wiring film. Patent Document 2 discloses a technique in which one electrode is provided on a substrate surface of a GaN-based semiconductor light-emitting device and the other electrode is provided on a side surface of the GaN-based semiconductor light-emitting device.
JP-A-10-163530 JP-A-8-330631

  In a high-power GaN-based semiconductor light-emitting device, the problem is how to release the heat generated from the GaN-based semiconductor light-emitting device. As a general method for releasing heat generated from the semiconductor light emitting device, there is a method in which the substrate surface of the semiconductor light emitting device is flip-chip bonded to a heat dissipation medium or the like.

  However, in a GaN-based semiconductor light-emitting device in which a p-side electrode and an n-side electrode are provided on the substrate surface, when flip chip bonding is performed on the mounting portion, the p-side electrode on the substrate surface, the p-side electrode on the mounting portion, and the substrate surface The n-side electrode and the n-side electrode of the mounting portion must be aligned with high accuracy to prevent the p-side electrode and the n-side electrode from being short-circuited. For this reason, there is a problem that a high-accuracy alignment device is required, which increases the cost of capital investment, and a problem that processing time becomes long in order to perform alignment with high accuracy.

  For example, in the GaN-based semiconductor light-emitting device according to Patent Document 1, one electrode is extracted from the substrate surface, and the other electrode is extracted from the back surface of the substrate. Therefore, when performing flip chip bonding, only one electrode needs to be aligned, so that flip chip bonding can be easily performed. However, since the GaN-based semiconductor light-emitting device according to Patent Document 1 forms a wiring film on the side surface and the back surface of the semiconductor light-emitting device, the wiring film cannot be formed unless it is made into a chip, so that the mass productivity is poor. Further, since light is emitted by side light emission, there is a problem that light extraction efficiency is lower than light emission by whole surface light emission.

  For example, in the GaN-based semiconductor light-emitting device according to Patent Document 2, in order to form an electrode on the side surface of the semiconductor light-emitting device, the electrode is formed after a hole having a predetermined depth is formed in the sapphire substrate. The sapphire substrate is a very hard material, and it is difficult to form a hole having a predetermined depth so that a part of the side surface of the sapphire substrate constituting the semiconductor light emitting device is exposed. As described above, there is a problem that it is very difficult to perform etching without penetrating the sapphire substrate and to provide a hole having a controlled depth in the sapphire substrate.

  The present invention has been made in view of the above problems, and provides a semiconductor light emitting device using a transparent insulating substrate that is excellent in light extraction efficiency and mass productivity and that can be easily flip-chip bonded, and a method for manufacturing the same. The purpose is to provide.

  The present invention provides a transparent insulating substrate having a first cutout portion provided on a side surface thereof communicating from the front surface side to the back surface side, a first semiconductor layer provided on the surface of the transparent insulating substrate, and the first semiconductor An active layer provided on a layer, a second semiconductor layer having a conductivity type opposite to the first semiconductor layer provided on the active layer, and provided on a side surface of the first notch, A first connecting portion electrically connected to the first semiconductor layer; a first electrode provided on a back surface of the transparent insulating substrate; electrically connected to the first connecting portion; and on the second semiconductor layer A semiconductor light emitting device comprising: a second electrode provided and electrically connected to the second semiconductor layer. ADVANTAGE OF THE INVENTION According to this invention, the semiconductor light-emitting device using the transparent insulating board | substrate which is excellent in the light extraction efficiency and mass productivity, and can perform flip chip bonding easily can be provided.

  The said structure WHEREIN: A said 2nd electrode is electrically connected to a mounting part, and it can be set as the structure which light radiate | emits from the back surface of the said transparent insulating board | substrate. According to this configuration, excellent light extraction efficiency can be obtained.

  The said structure WHEREIN: It can be set as the structure by which the said 1st notch part and the said 1st connection part are provided 2 or more. According to this configuration, the uniformity of current distribution can be improved.

  The said structure WHEREIN: The said 1st notch part can be set as the structure formed over both the two side surfaces of the said transparent insulating board | substrate. According to this configuration, the light emitting region can be made wider and the mass productivity can be further improved.

  In the above configuration, the transparent insulating substrate provided on the side surface with the second cutout portion communicating from the front surface side to the back surface side is further provided on the side surface of the second cutout portion, and the second semiconductor layer A second connecting portion that is electrically connected; and a third electrode that is provided on the back surface of the transparent insulating substrate and is electrically connected to the second connecting portion together with the second electrode. Can do. According to this configuration, the probe test of the semiconductor light emitting device can be easily performed before flip chip bonding is performed on the mounting portion.

  The said structure WHEREIN: It can be set as the structure which comprises the insulating layer provided so that the said 1st connection part currently formed in the surface side of the said transparent insulating board | substrate may be covered. According to this configuration, it is possible to prevent a short circuit between the first electrode and the second electrode at the first connection portion, and it is possible to more easily perform flip chip bonding.

  In the above configuration, the first semiconductor layer and the second semiconductor layer may be GaN-based semiconductor layers. According to this configuration, it is possible to provide a GaN-based semiconductor light-emitting device using a transparent insulating substrate that is excellent in light extraction efficiency and mass productivity and can be easily flip-chip bonded.

  In the above configuration, the transparent insulating substrate may be a sapphire substrate. According to this configuration, excellent light extraction efficiency can be obtained.

  The present invention includes a step of forming a first semiconductor layer on a surface of a transparent insulating substrate, a step of forming an active layer on the first semiconductor layer, and the opposite of the first semiconductor layer on the active layer Forming a conductive second semiconductor layer; forming a side surface of the transparent insulating substrate through a first notch communicating from the front surface side to the back surface side of the transparent insulating substrate; Forming a first connection portion electrically connected to the first semiconductor layer on a side surface of the first cutout portion; and a first connection portion electrically connected to the first connection portion on a back surface of the transparent insulating substrate. A method of manufacturing a semiconductor light emitting device, comprising: forming one electrode; and forming a second electrode electrically connected to the second semiconductor layer on the second semiconductor layer. is there. ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of the semiconductor light-emitting device using the transparent insulating board | substrate which is excellent in the light extraction efficiency and mass productivity, and can perform flip chip bonding easily can be provided.

  The said structure WHEREIN: The process of forming a said 1st notch part can be set as the structure which is a process of cut | disconnecting the said transparent insulating board | substrate so that a through-hole may be divided | segmented. According to this configuration, since the first cutout portion can be formed with a high yield, the mass productivity is excellent.

  The said structure WHEREIN: The said through-hole can be set as the structure formed by irradiating a laser.

  In the above structure, a step of forming a second cutout portion on the side surface of the transparent insulating substrate and a second connection portion electrically connected to the second semiconductor layer on the side surface of the second cutout portion are formed. And a step of forming a third electrode that is electrically connected to the second connection portion on the back surface of the transparent insulating substrate. According to this configuration, the probe test of the semiconductor light emitting device can be easily performed before flip chip bonding is performed on the mounting portion.

  In the above-described configuration, a configuration including a step of electrically connecting the second electrode and the mounting portion by flip chip bonding, and a step of electrically connecting the first electrode and the mounting portion by wire bonding; can do. According to this configuration, flip chip bonding can be easily performed.

  According to the present invention, it is possible to provide a semiconductor light emitting device using a transparent insulating substrate that is excellent in light extraction efficiency and mass productivity and can be easily flip-chip bonded, and a method for manufacturing the same.

  Embodiments of the present invention will be described below with reference to the drawings.

  1A is a perspective view of the front surface side of the semiconductor light emitting device according to the first embodiment, and FIG. 1B is a perspective view of the rear surface side of the semiconductor light emitting device according to the first embodiment. ) Is a cross-sectional view taken along a line AA in FIG. Here, in FIG. 1C, the surface of the semiconductor light emitting device is shown facing up, and the scale is changed from that in FIGS. 1A and 1B for the sake of simplicity. (Hereinafter, the same applies to the sectional views of the embodiments.) In FIG. 1A, the first semiconductor layer 14, the active layer 16, the second semiconductor layer 18, and the p-side contact electrode 34 are not shown for the sake of simplicity. ing.

  Referring to FIG. 1C, on the surface of the transparent insulating substrate 12 made of sapphire, the first semiconductor layer 14 made of n-type GaN, the active layer 16 made of InGaN MQW (multiple quantum well structure), and opposite to the n-type. The second semiconductor layer 18 made of p-type GaN having the conductivity type is provided in this order. A first cutout portion 20 is provided on the side surface of the transparent insulating substrate 12. The first cutout portion 20 is provided in communication with the back surface side that is the surface on the opposite side from the front surface side of the transparent insulating substrate 12. The term “provided in communication” means that the transparent insulating substrate 12 is provided continuously from the front surface side to the back surface side. On the first semiconductor layer 14, an n-side contact electrode 22 made of Ti (titanium) / Al (aluminum) / Au (gold) and a surface wiring layer 24 made of Ti / Au that is electrically connected to the n-side contact electrode 22. And are provided. The n-side contact electrode 22 is provided to make ohmic contact with the first semiconductor layer 14. A side wiring layer 26 made of Ti / Au is provided on the side surface of the first cutout portion 20 and is electrically connected to the surface wiring layer 24, and the side wiring layer 26 is electrically connected to the back surface of the transparent insulating substrate 12. The back wiring layer 28 made of Ti / Au is connected. As a result, the first connection portion 30 including the n-side contact electrode 22, the front surface wiring layer 24, the side surface wiring layer 26, and the back surface wiring layer 28 is formed. A first electrode 32 that is an n-side electrode that is electrically connected to the first connection portion 30 is provided on the back surface of the transparent insulating substrate 12. The first electrode 32 is used for connection to the outside. Here, the first connection portion 30 is provided to electrically connect the first semiconductor layer 14 and the first electrode 32, and the first cutout portion 20 is used to form the first connection portion 30. Is provided. A p-side contact electrode 34 made of Ni (nickel) / Au is provided on the second semiconductor layer 18. The p-side contact electrode 34 is provided to make ohmic contact with the second semiconductor layer 18. A second electrode 36 that is a p-side electrode that is electrically connected to the second semiconductor layer 18 is provided on the p-side contact electrode 34. The second electrode 36 is used for connection with the outside.

  Referring to FIG. 1A, most of the light emitting region on the surface of the transparent insulating substrate 12 is covered with the second electrode 36, and the n-side contact electrode 22 and the surface wiring layer 24 are located in the vicinity of the first notch 20. Is provided. Referring to FIG. 1B, the back surface of the transparent insulating substrate 12 is provided with a back surface wiring layer 28 and a first electrode 32 in the vicinity of the first notch 20, and the other most regions are transparent insulating substrates. 12 The back surface is exposed.

  With reference to FIGS. 2A to 5B, a method for manufacturing a semiconductor light emitting device according to Example 1 will be described. Referring to FIG. 2A, a first semiconductor layer 14 made of n-type GaN is formed on a transparent insulating substrate 12 made of sapphire having a thickness of 80 to 100 μm by MOCVD (metal organic chemical vapor deposition). Then, an active layer 16 made of InGaN MQW and a second semiconductor layer 18 made of p-type GaN having a conductivity type opposite to the n-type are formed in this order.

  Referring to FIG. 2B, the surface of the transparent insulating substrate 12 is patterned with a photoresist, and the first semiconductor layer 14, the active layer 16, and the second semiconductor layer 18 are etched by the RIE (reactive ion etching) method. To do.

  2C, the p-side contact electrode 34 is formed on the second semiconductor layer 18, and the n-side contact electrode 22 is formed on the first semiconductor layer 14 by a lift-off method. The p-side contact electrode 34 and the n-side contact electrode 22 are formed by depositing Ni / Au and Ti / Al / Au, respectively. Further, if necessary, a second electrode 36 made of Au having a thickness of 1 to 3 μm is formed on the p-side contact electrode 34 by plating.

  Referring to FIG. 3A, the surface of the first semiconductor layer 14 is irradiated with a laser to form a through hole 38 having a diameter of 100 μm that penetrates the transparent insulating substrate 12. The laser uses a 3 times higher frequency (wavelength 355 nm) than a Q-switched YAG laser. In addition to laser irradiation using a normal lens system, a water jet of about 100 μm is applied to a portion where the through hole 38 is formed, and then the laser is irradiated with the water jet as an optical waveguide to form the through hole 38. It is also possible to form. FIG. 3B is a top view of FIG. A cross-sectional view taken along the line A-A in FIG. 3B corresponds to FIG.

  Referring to FIG. 4A, Ti / Au is formed on the back surface of the transparent insulating substrate 12 and the side surfaces of the through holes 38 by sputtering. Thereafter, the back surface of the transparent insulating substrate 12 is patterned with a photoresist, and Au is plated by a plating method. By etching the Au on the back surface of the transparent insulating substrate 12 using the plated Au as a mask, the side wiring layer 26 and the back wiring layer 28 having a thickness of 0.2 μm are formed.

  4B, the back surface of the transparent insulating substrate 12 is patterned with a photoresist, and a first electrode 32 made of Au having a thickness of 1 to 3 μm is further formed on a part of the back surface wiring layer 28 by plating. Form.

  Referring to FIG. 4C, the surface wiring layer 24 made of Ti / Au having a thickness of 0.2 μm that electrically connects the n-side contact electrode 22 and the side wiring layer 26 to the surface of the first semiconductor layer 14. Is formed by a lift-off method. As a result, the first connection portion 30 including the n-side contact electrode 22, the front surface wiring layer 24, the side surface wiring layer 26, and the back surface wiring layer 28 is formed.

  Referring to FIG. 5A, the transparent insulating substrate 12 is cleaved so as to divide the through hole 38, thereby penetrating the first cutout portion 20 communicating from the front surface side to the back surface side of the transparent insulating substrate 12. Can be formed. Thereby, the semiconductor light emitting device according to Example 1 is completed. Here, in order to facilitate the cleaving, it is preferable to put a scribe line in advance in the dividing line with a laser scriber. Moreover, it is preferable to cleave so that the area of the 1st notch part 20 may become 1/2 of the area of the through-hole 38 seeing from the transparent insulating board | substrate 12 surface. FIG. 5B is a top view of FIG. A cross-sectional view taken along A-A in FIG. 5B corresponds to FIG.

  6A is a cross-sectional view when the second electrode 36 of the semiconductor light emitting device according to the first embodiment is connected to the mounting portion 40, and FIG. 6B is a top view of FIG. 6A. FIG. 6 (c) is a bottom view of FIG. 6 (a). Referring to FIG. 6A, the second electrode 36 is connected to the heat radiating plate 44 made of Cu by flip chip bonding using the solder 42. An anode electrode 46 is connected to the heat sink 44. The first electrode 32 is connected to the cathode side electrode 50 by wire bonding using a wire 48. The heat dissipation plate 44 is covered with a resin 52 made of epoxy, whereby the anode side electrode 46 and the cathode side electrode 50 are insulated.

  According to the first embodiment, the second electrode 36 is connected to the heat radiating plate 44 by flip chip bonding. However, it is sufficient that the second electrode 36 and the heat radiating plate 44 are in contact with each other, and accurate alignment is not necessary. The first electrode 32 is connected to the cathode side electrode 50 by wire bonding using a wire 48. From these, only the second electrode 36 is flip-chip bonded, and the accuracy of the alignment is not necessary, so that the flip-chip bonding can be easily performed. Further, since the second electrode 36 and the heat radiating plate 44 are in contact with each other, the heat generated in the semiconductor light emitting device can be efficiently released through the heat radiating plate 44.

  Further, since the second electrode 36 of the semiconductor light emitting device according to the first embodiment is connected to the mounting portion 40 by flip chip bonding, the light generated in the active layer 16 can be emitted from the back surface of the transparent insulating substrate 12. For this reason, the light extraction efficiency superior to that of the semiconductor light emitting device according to Patent Document 1 in which light is emitted from the side surface can be obtained. Here, the second electrode 36 formed on the surface of the transparent insulating substrate 12 also has a function of reflecting light emitted from the active layer 16 toward the back surface of the transparent insulating substrate 12.

  Further, according to the first embodiment, the semiconductor light emitting device having the first cutout portion 20 is formed by cleaving so as to divide the through hole 38. For this reason, compared with the case where the vicinity of the through-hole 38 is cleaved to form a semiconductor light emitting device having the through-hole 38, generation of cracks due to cleaving can be suppressed and the yield can be improved, so that excellent mass productivity is obtained. It is done. Further, since the area of the first notch 20 when viewed from the surface of the transparent insulating substrate 12 is smaller than the area of the through hole 38, the semiconductor light emitting device according to the first embodiment is compared with the semiconductor light emitting device having the through hole 38. The light emitting area can be widened. Further, since the two first cutout portions 20 can be formed from one through hole 38, the number of the through holes 38 formed in the semiconductor light emitting device according to the first embodiment is smaller than that in the semiconductor light emitting device having the through holes 38. I'll do it. Therefore, a manufacturing process can be shortened and excellent mass productivity can be obtained.

  Furthermore, according to the first embodiment, the first connection portion 30 that electrically connects the first semiconductor layer 14 and the first electrode 32 is provided on the side surface of the first cutout portion 20. The 1st notch part 20 is formed by cleaving so that the through-hole 38 may be divided | segmented. That is, the first connection portion 30 may be formed on the side surface of the through hole 38. The formation of the first connection portion 30 on the side surface of the through hole 38 can be performed on a wafer basis by sputtering or the like. Thus, since the 1st connection part 30 can be collectively formed in a wafer unit, it is excellent in mass productivity.

  Furthermore, according to the first embodiment, the through hole 38 is formed in the transparent insulating substrate 12 made of sapphire. Since sapphire is a very hard material, it is very difficult to form a hole with a desired depth as in the semiconductor light emitting device according to Patent Document 2, but the formation of the through hole 38 has a desired depth. It is easier compared to the case of forming a hole. For this reason, since the semiconductor light-emitting device according to Example 1 can be easily manufactured as compared with the semiconductor light-emitting device according to Patent Document 2, it is excellent in mass productivity.

  Furthermore, according to Example 1, since the 1st notch part 20 is dented, the surface area of the side surface wiring layer 26 can be taken large compared with the case where it is not dented. Therefore, since the maximum allowable amount of current can be increased, it is possible to cope with a high-power semiconductor light emitting device.

  In the first embodiment, the first semiconductor layer 14 is an n-type GaN, the active layer 16 is an InGaN MQW, and the second semiconductor layer 18 is a p-type GaN. May be p-type GaN, and the second semiconductor layer 18 may be n-type GaN. Further, the first semiconductor layer 14, the active layer 16, and the second semiconductor layer 18 may use other GaN-based semiconductors or semiconductors other than GaN-based semiconductors.

  In the first embodiment, the transparent insulating substrate 12 is made of sapphire. However, the present invention is not limited to this, and other materials may be used as long as they are transparent and have insulating properties.

  Furthermore, although the example in which the through hole 38 has a circular shape has been described in the first embodiment, the shape is not limited to this, and may be another shape such as an ellipse or a square.

  Furthermore, in Example 1, the cleaving was shown as an example of the method for cutting the transparent insulating substrate 12, but the cutting method is not limited to this, and other cutting methods such as dicing may be used.

  FIG. 7A is a perspective view of the front surface side of the semiconductor light emitting device according to the second embodiment, and FIG. 7B is a perspective view of the rear surface side of the semiconductor device according to the second embodiment. These are sectional drawings between AA of Drawing 7 (a). Here, in FIG. 7A, the first semiconductor layer 14, the active layer 16, the second semiconductor layer 18, and the p-side contact electrode 34 are not shown for the sake of simplicity.

  Referring to FIG. 7A, the semiconductor light emitting device according to Example 2 is provided with two first cutout portions 20. As shown in FIG. 7C, the first connection portions 30 are provided corresponding to the two first cutout portions 20, respectively. Referring to FIG. 7B, the back surface wiring layers 28 of the two first connection portions 30 extend along the region of the back surface of the transparent insulating substrate 12 corresponding to the non-light emitting region of the surface of the transparent insulating substrate 12 and are mutually connected. Connected. The light emitting region on the surface of the transparent insulating substrate 12 refers to a region where the first semiconductor layer 14, the active layer 16, the second semiconductor layer 18, the p-side contact electrode 34, and the second electrode 36 are stacked. The non-light emitting area refers to an area around the light emitting area. The other configuration is the same as that of the semiconductor light emitting device according to the first embodiment, and is not shown in FIG. 1A to FIG.

  In the semiconductor light emitting device according to the first embodiment, when the size of the semiconductor light emitting device is increased as the output of the semiconductor light emitting device is increased, the current distribution may be biased. However, according to the second embodiment, the first connection portions 30 are provided corresponding to the two first cutout portions 20, respectively, and the first connection portions 30 are connected to each other on the back surface of the transparent insulating substrate 12. Therefore, the uniformity of current distribution can be improved.

  Further, according to the second embodiment, the back surface wiring layers 28 of the two first connection portions 30 are provided along the region on the back surface of the transparent insulating substrate 12 corresponding to the non-light emitting region on the surface of the transparent insulating substrate 12. ing. For this reason, since the emitted light can be emitted from the back surface of the transparent insulating substrate 12 without being blocked, excellent light extraction efficiency can be obtained.

  8A is a perspective view of the front surface side of the semiconductor light emitting device according to the third embodiment, and FIG. 8B is a perspective view of the rear surface side of the semiconductor light emitting device according to the third embodiment. ) Is a cross-sectional view taken along a line AA in FIG. Here, in FIG. 8A, the first semiconductor layer 14, the active layer 16, the second semiconductor layer 18, and the p-side contact electrode 34 are not shown for simplicity.

  Referring to FIG. 8A, the semiconductor light emitting device according to Example 3 is provided with two first cutout portions 20. Referring to FIG. 8C, a first connection portion 30 is provided corresponding to each of the two first cutout portions 20, and a first electrode 32 is provided. The other configuration is the same as that of the semiconductor light emitting device according to the first embodiment, and is not shown in FIG. 1A to FIG.

  According to the third embodiment, evenness of the current distribution can be improved even when the size of the semiconductor light emitting device is increased as the output of the semiconductor light emitting device is increased.

  Further, according to the third embodiment, the first electrodes 32 are respectively provided corresponding to the two first cutout portions 20. For this reason, it is not necessary to connect the 1st connection part 30 provided in the two 1st notch parts 20 mutually. Therefore, it is not necessary to extend and connect the back wiring layer 28 on the back surface of the transparent insulating substrate 12 as in the second embodiment.

  9A is a perspective view of the front surface side of the semiconductor light emitting device according to the fourth embodiment, and FIG. 9B is a perspective view of the rear surface side of the semiconductor light emitting device according to the fourth embodiment. ) Is a cross-sectional view taken along a line AA in FIG. Here, the first semiconductor layer 14 and the insulating layer 56 are not shown for simplicity.

  With reference to FIG. 9A, in the semiconductor light emitting device according to Example 4, the first cutout portion 20 and the second cutout portion 60 are provided on the side surface of the transparent insulating substrate 12. The first cutout portion 20 and the second cutout portion 60 are provided so as to communicate from the front surface side of the transparent insulating substrate 12 to the back surface side that is the opposite surface. The second electrode 36 is provided in most of the light emitting region on the surface of the transparent insulating substrate 12. The n-side contact electrode 22 and the surface wiring layer 24 are provided in the vicinity of the first notch portion 20, and the surface wiring layer 24 and the surface second wiring layer 54 are provided in the vicinity of the second notch portion 60. Referring to FIG. 9B, the back surface of the transparent insulating substrate 12 is provided with the back surface wiring layer 28 and the first electrode 32 in the vicinity of the first notch portion 20, and the back surface wiring layer in the vicinity of the second notch portion 60. 28 and a third electrode 58 are provided. In most other regions, the back surface of the transparent insulating substrate 12 is exposed.

  Referring to FIG. 9C, the first connection portion 30 is provided in the first cutout portion 20 on the side surface of the transparent insulating substrate 12 having the first semiconductor layer 14, the active layer 16, and the second semiconductor layer 18. Thus, the insulating layer 56 is provided between the first connection part 30, the first notch part 20, and the first semiconductor layer 14. A second connection portion 62 is provided in the second cutout portion 60. The second connection portion 62 includes a front surface second wiring layer 54, a front surface wiring layer 24, a side surface wiring layer 26, and a back surface wiring layer 28. The surface second wiring layer 54 and the surface wiring layer 24 are provided on the surface of the insulating layer 56 and are electrically connected to each other, and the surface second wiring layer 54 is also electrically connected to the p-side contact electrode 34. The side wiring layer 26 is provided on the side surface of the second notch 60 and is electrically connected to the surface wiring layer 24. The back wiring layer 28 is provided on the back surface of the transparent insulating substrate 12 and is electrically connected to the side wiring layer 26. On the back surface of the transparent insulating substrate 12, a first electrode 32 that is an n-side electrode that is electrically connected to the first connection portion 30, and a third electrode 58 that is a p-side electrode that is electrically connected to the second connection portion 62. And are provided. The first electrode 32 and the third electrode 58 are used for connection to the outside. An insulating layer 56 is provided between the second connection portion 62 and the second notch portion 60, the first semiconductor layer 14, the active layer 16, and the second semiconductor layer 18. Here, the second connection portion 62 is electrically connected to both the second electrode 36 and the third electrode 58, and is provided to electrically connect the second semiconductor layer 18 and the third electrode 58. The second cutout portion 60 is provided to form the second connection portion 62. Further, since the insulating layer 56 is provided so that the current flowing from the second electrode 36 and the third electrode 58 to the first electrode 32 is not short-circuited by the first semiconductor layer 14, at least the second connection portion 62 and the first semiconductor layer 14. It should just be provided between.

  With reference to FIGS. 10A to 11C, a method for manufacturing a semiconductor light emitting device according to Example 4 will be described. The formation method of the first semiconductor layer 14, the active layer 16, and the second semiconductor layer 18 is the same as that of the first embodiment, and the description thereof is omitted because it is shown in FIGS. 2 (a) and 2 (b). Referring to FIG. 10A, the through-hole 38 is formed by irradiating the surface of the first semiconductor layer 14 with a laser. Referring to FIG. 10B, an insulating layer 56 made of SiO2 (silicon oxide) is formed on the side surface of the through hole 38 and the surfaces of the first semiconductor layer 14, the active layer 16, and the second semiconductor layer 18 by sputtering. Referring to FIG. 10C, patterning is performed with a photoresist, and the insulating layer 56 on the first semiconductor layer 14 and the second semiconductor layer 18 is etched by the RIE method. An n-side contact electrode 22 and a p-side contact electrode 34 are formed in the etched region by a lift-off method. The n-side contact electrode 22 is electrically connected to the first semiconductor layer 14, and the p-side contact electrode 34 is electrically connected to the second semiconductor layer 18.

  Referring to FIG. 11A, a surface second wiring layer 54 having a thickness of 0.3 to 0.5 μm that is electrically connected to the p-side contact electrode 34 is formed by a lift-off method. The second electrode 36 is formed on the p-side contact electrode 34 by plating. Referring to FIG. 11B, Ti / Au is formed on the side surface of the through hole 38 and the back surface of the transparent insulating substrate 12 by sputtering. Thereafter, the back surface of the transparent insulating substrate 12 is patterned with a photoresist, and Au is plated by a plating method. The side wiring layer 26 and the back wiring layer 28 are formed by etching Au on the back surface of the transparent insulating substrate 12 using the plated Au as a mask. The side wiring layer 26 and the back wiring layer 28 are electrically connected. The first electrode 32 and the third electrode 58 having a thickness of 1 to 3 μm are formed on a part of the back wiring layer 28 by plating. Referring to FIG. 11C, the surface wiring layer 24 is formed by a lift-off method. As a result, a second connection portion 62 is formed in which the front surface wiring layer 24, the front surface second wiring layer 54, the side surface wiring layer 26, and the back surface wiring layer 28 are electrically connected. By cleaving the transparent insulating substrate 12 so as to divide the through hole 38, the semiconductor light emitting device according to Example 4 having the first cutout portion 20 and the second cutout portion 60 is completed. Here, in order to facilitate the cleaving, it is preferable to put a scribe line in advance in the dividing line with a laser scriber. Moreover, it is preferable to cleave so that the area of the 1st notch part 20 may become 1/2 of the area of the through-hole 38 seeing from the transparent insulating board | substrate 12 surface.

  According to the fourth embodiment, since the first electrode 32 and the third electrode 58 are provided on the back surface of the transparent insulating substrate 12, the probe test can be easily performed on the back surface of the transparent insulating substrate 12. For this reason, the semiconductor light emitting device can be easily selected by the probe test before connecting the second electrode 36 of the semiconductor light emitting device to the mounting portion 40. Therefore, only good semiconductor light emitting devices can be selected and mounted, and the manufacturing cost can be reduced.

  12A is a perspective view of the front surface side of the semiconductor light emitting device according to Example 5, and FIG. 12B is a perspective view of the back surface side of the semiconductor light emitting device according to Example 5, and FIG. ) Is a cross-sectional view taken along line AA in FIG. Here, the first semiconductor layer 14, the active layer 16, the second semiconductor layer 18, and the p-side contact electrode 34 are not shown for simplicity.

  Referring to FIGS. 12A and 12B, in the semiconductor light emitting device according to Example 5, the first cutout portion 20 extends over both of the two side surfaces of the transparent insulating substrate 12 (that is, the transparent insulating property). At the corners of the substrate 12). Other configurations are the same as those of the semiconductor device according to the first embodiment, and are not illustrated because they are illustrated in FIGS. 1A to 1C. Here, it is preferable that the area of the first notch 20 viewed from the surface of the transparent insulating substrate 12 is ¼ of the area of the through hole 38.

  The area of the first cutout portion 20 of the semiconductor light emitting device according to the fifth embodiment viewed from the surface of the transparent insulating substrate 12 is smaller than the area of the first cutout portion 20 of the semiconductor light emitting device according to the first embodiment. Therefore, the semiconductor light emitting device according to the fifth embodiment can take a wider light emitting region than the semiconductor light emitting device according to the first embodiment.

  Further, according to the fifth embodiment, four first cutout portions 20 can be formed from one through hole 38. Therefore, the number of the through holes 38 formed in the semiconductor light emitting device according to the fifth embodiment is smaller than that of the semiconductor light emitting device according to the first embodiment. Therefore, the semiconductor light emitting device according to Example 5 can further shorten the manufacturing process and obtain more excellent mass productivity than the semiconductor light emitting device according to Example 1.

  In the fifth embodiment, the case where the first cutout portion 20 is provided across both of the two side surfaces of the transparent insulating substrate 12 has been described as an example. However, the second cutout portion 60 is provided on the transparent insulating substrate 12. The two or more first cutout portions 20 and the second cutout portions 60 may extend over both of the two side surfaces of the transparent insulating substrate 12. It may be provided.

  FIG. 13 is a cross-sectional view of the semiconductor light emitting device according to the sixth embodiment. Referring to FIG. 13, a barrier metal 64 made of Ti (titanium) / Mo (molybdenum) / Au is provided on the second electrode 36. On the barrier metal 64, a solder metal 66 made of Ti / Au / Sn (tin) / Au is provided. The other configuration is the same as that of the semiconductor light emitting device according to the first embodiment, and is not illustrated because it is shown in FIG.

  According to the sixth embodiment, when the chip 40 is flip-chip bonded, the flip-chip bonding can be easily performed because the solder metal 66 is provided in the semiconductor light emitting device. The barrier metal 64 is provided to prevent the second electrode 36 from being eroded when the solder metal 66 is melted.

  FIG. 14 is a cross-sectional view of the semiconductor light emitting device according to the seventh embodiment. Referring to FIG. 14, the insulating layer 56 covers the surface of the semiconductor light emitting device excluding the second electrode 36. The other configuration is the same as that of the semiconductor light emitting device according to the first embodiment, and is not illustrated because it is shown in FIG.

  When the semiconductor light emitting device is flip-chip bonded to the mounting portion 40, the positions of the semiconductor light emitting device and the mounting portion 40 may be misaligned, and the solder provided in the mounting portion 40 may protrude toward the first connection portion 30. . Even in such a case, according to the seventh embodiment, since the first connection portion 30 is covered with the insulating layer 56, a short circuit between the first electrode 32 and the second electrode 36 can be prevented. In addition, this increases the allowable range of alignment accuracy in flip chip bonding, so that flip chip bonding can be performed more easily.

  FIG. 15 is a cross-sectional view of the semiconductor light emitting device according to the eighth embodiment. Referring to FIG. 15, the configuration is the same as that of the semiconductor light emitting device according to Example 1 except that the first electrode 32 and the second electrode 36 are not provided. Since the semiconductor device according to Example 1 is shown in FIG.

  According to the eighth embodiment, the back wiring layer 28 also functions as the first electrode 32, and the p-side contact electrode 34 also functions as the second electrode 36. Here, the function of the 1st electrode 32 and the 2nd electrode 36 means the function used for the connection with the exterior. In the semiconductor light emitting device according to Example 8, it is not necessary to separately form the first electrode 32 and the second electrode 36, so that the manufacturing process can be shortened and the mass productivity can be improved.

  16A is a perspective view of the front surface side of the semiconductor light emitting device according to Example 9, and FIG. 16B is a perspective view of the back surface side of the semiconductor light emitting device according to Example 9. FIG. ) Is a cross-sectional view taken along a line AA in FIG. Here, in FIG. 16A, the first semiconductor layer 14, the active layer 16, the second semiconductor layer 18, and the p-side contact electrode 34 are not shown for the sake of simplicity.

  Referring to FIG. 16C, in the semiconductor light emitting device according to Example 9, a part of the first semiconductor layer 14 where the first connection part 30 is formed is etched until the surface of the transparent insulating substrate 12 is exposed. Yes. A part of the surface wiring layer 24 is directly formed on the surface of the transparent insulating substrate 12. Other configurations are the same as those of the semiconductor light emitting device according to the first embodiment and are shown in FIG. 1A to FIG.

  According to Example 9, a part of the surface wiring layer 24 can be directly formed on the surface of the transparent insulating substrate 12, so that the adhesion strength of the surface wiring layer 24 is improved and the reliability of the semiconductor light emitting device is improved. improves. In addition, the through hole 38 is formed in the first semiconductor layer 14 and the transparent insulating substrate 12 only by forming the through hole 38 by the laser for forming the first notch 20 only on the transparent insulating substrate 12. Compared to the case, the manufacturing margin can be increased.

  Although the preferred embodiments of the present invention have been described above, the present invention is not limited to such specific embodiments, and various modifications and changes can be made within the scope of the gist of the present invention described in the claims. It can be changed.

1A is a perspective view of the front surface side of the semiconductor light emitting device according to the first embodiment, and FIG. 1B is a perspective view of the rear surface side of the semiconductor light emitting device according to the first embodiment. ) Is a cross-sectional view taken along a line AA in FIG. 2A to 2C are cross-sectional views (part 1) illustrating the method for manufacturing the semiconductor light emitting device according to the first embodiment. FIG. 3A is a cross-sectional view (part 2) illustrating the method of manufacturing the semiconductor light emitting device according to the first embodiment, and FIG. 3B is a top view of FIG. 4A to 4C are cross-sectional views (part 3) illustrating the method for manufacturing the semiconductor light emitting device according to the first embodiment. FIG. 5A is a cross-sectional view (part 4) illustrating the method for manufacturing the semiconductor light emitting device according to the first embodiment, and FIG. 5B is a top view of FIG. FIG. 6A is a cross-sectional view when the semiconductor light emitting device according to the first embodiment is connected to the mounting portion. 6B is a top view of FIG. 6A, and FIG. 6C is a bottom view of FIG. 6A. 7A is a perspective view of the front surface side of the semiconductor light emitting device according to the second embodiment, and FIG. 7B is a perspective view of the rear surface side of the semiconductor light emitting device according to the second embodiment. ) Is a cross-sectional view taken along the line AA in FIG. 8A is a perspective view of the front surface side of the semiconductor light emitting device according to the third embodiment, and FIG. 8B is a perspective view of the rear surface side of the semiconductor light emitting device according to the third embodiment. ) Is a cross-sectional view taken along a line AA in FIG. 9A is a perspective view of the front surface side of the semiconductor light emitting device according to the fourth embodiment, and FIG. 9B is a perspective view of the rear surface side of the semiconductor light emitting device according to the fourth embodiment. ) Is a cross-sectional view taken along a line AA in FIG. 10A to 10C are cross-sectional views (part 1) illustrating the method for manufacturing the semiconductor light emitting device according to the fourth embodiment. FIG. 11A to FIG. 11C are cross-sectional views (part 2) illustrating the method for manufacturing the semiconductor light emitting device according to the fourth embodiment. 12A is a perspective view of the front surface side of the semiconductor light emitting device according to Example 5, and FIG. 12B is a perspective view of the back surface side of the semiconductor light emitting device according to Example 5, and FIG. ) Is a cross-sectional view taken along a line AA in FIG. FIG. 13 is a cross-sectional view of the semiconductor light emitting device according to the sixth embodiment. FIG. 14 is a cross-sectional view of the semiconductor light emitting device according to the seventh embodiment. FIG. 15 is a cross-sectional view of the semiconductor light emitting device according to the eighth embodiment. 16A is a perspective view of the front surface side of the semiconductor light emitting device according to Example 9, and FIG. 16B is a perspective view of the back surface side of the semiconductor light emitting device according to Example 9. FIG. ) Is a cross-sectional view taken along a line AA in FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 12 Transparent insulating substrate 14 1st semiconductor layer 16 Active layer 18 2nd semiconductor layer 20 1st notch part 22 n side contact electrode 24 surface wiring layer 26 side wiring layer 28 back surface wiring layer 30 1st connection part 32 1st electrode 34 p-side contact electrode 36 second electrode 38 through hole 40 mounting part 42 solder 44 heat sink 46 anode side electrode 48 wire 50 cathode side electrode 52 resin 54 surface second wiring layer 56 insulating layer 58 third electrode 60 second notch Part 62 Second connection part 64 Barrier metal 66 Solder metal

Claims (13)

A transparent insulating substrate provided on the side surface with a first notch communicating from the front side to the back side;
A first semiconductor layer provided on a surface of the transparent insulating substrate;
An active layer provided on the first semiconductor layer;
A second semiconductor layer having a conductivity type opposite to the first semiconductor layer provided on the active layer;
A first connection portion provided on a side surface of the first cutout portion and electrically connected to the first semiconductor layer;
A first electrode provided on a back surface of the transparent insulating substrate and electrically connected to the first connection portion;
A semiconductor light emitting device comprising: a second electrode provided on the second semiconductor layer and electrically connected to the second semiconductor layer.   The semiconductor light emitting device according to claim 1, wherein the second electrode is electrically connected to a mounting portion, and light is emitted from the back surface of the transparent insulating substrate.   3. The semiconductor light emitting device according to claim 1, wherein two or more of the first cutout portions and the first connection portions are provided.   4. The semiconductor light emitting device according to claim 1, wherein the first cutout portion is provided across both of the two side surfaces of the transparent insulating substrate. 5. The transparent insulative substrate having a second cutout portion that communicates from the front surface side to the back surface side is further provided on the side surface of the second cutout portion and electrically connected to the second semiconductor layer. A second connecting part,
5. A third electrode provided on the back surface of the transparent insulating substrate and electrically connected to the second connection portion together with the second electrode. 6. The semiconductor light-emitting device as described.   6. The semiconductor light emitting device according to claim 1, further comprising an insulating layer provided so as to cover the first connection portion formed on the surface side of the transparent insulating substrate. .   The semiconductor light emitting device according to any one of claims 1 to 6, wherein the first semiconductor layer and the second semiconductor layer are GaN-based semiconductor layers.   The semiconductor light-emitting device according to claim 1, wherein the transparent insulating substrate is a sapphire substrate. Forming a first semiconductor layer on the surface of the transparent insulating substrate;
Forming an active layer on the first semiconductor layer;
Forming a second semiconductor layer having a conductivity type opposite to the first semiconductor layer on the active layer;
A step of forming a first notch communicating with the side surface of the transparent insulating substrate from the front surface side to the back surface side of the transparent insulating substrate; and
Forming a first connection portion electrically connected to the first semiconductor layer on a side surface of the first cutout portion;
Forming a first electrode electrically connected to the first connection portion on the back surface of the transparent insulating substrate;
Forming a second electrode electrically connected to the second semiconductor layer on the second semiconductor layer. A method for manufacturing a semiconductor light emitting device, comprising:   The method of manufacturing a semiconductor light emitting device according to claim 9, wherein the step of forming the first cutout is a step of cutting the transparent insulating substrate so as to divide the through hole.   The method of manufacturing a semiconductor light emitting device according to claim 10, wherein the through hole is formed by irradiating a laser. A step of forming a second notch on the side surface of the transparent insulating substrate;
Forming a second connection portion electrically connected to the second semiconductor layer on a side surface of the second cutout portion;
The semiconductor light-emitting device according to claim 9, further comprising: forming a third electrode electrically connected to the second connection portion on a back surface of the transparent insulating substrate. Manufacturing method. Electrically connecting the second electrode and the mounting portion by flip chip bonding;
The method for manufacturing a semiconductor light emitting device according to claim 9, further comprising a step of electrically connecting the first electrode and the mounting portion by wire bonding.

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