JP2008128972A - Electron beam irradiation system - Google Patents

Electron beam irradiation system Download PDF

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JP2008128972A
JP2008128972A JP2006317503A JP2006317503A JP2008128972A JP 2008128972 A JP2008128972 A JP 2008128972A JP 2006317503 A JP2006317503 A JP 2006317503A JP 2006317503 A JP2006317503 A JP 2006317503A JP 2008128972 A JP2008128972 A JP 2008128972A
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electron beam
irradiation system
detector
sample
irradiated
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JP4567652B2 (en
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Masaru Haraguchi
大 原口
Keigo Uchiyama
圭吾 内山
Tatsuya Matsumura
達也 松村
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Hamamatsu Photonics KK
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Hamamatsu Photonics KK
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Priority to PCT/JP2007/071608 priority patent/WO2008062670A1/en
Priority to TW96142858A priority patent/TW200832512A/en
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    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/04—Irradiation devices with beam-forming means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables
    • H01J2237/24585—Other variables, e.g. energy, mass, velocity, time, temperature

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electron beam irradiation system capable of accurately measuring electron beam energy cast on a sample, without being influenced by visible light, ultraviolet light or the like. <P>SOLUTION: The electron beam irradiation system has an electron beam E irradiated on the specimen 4 accommodated in a chamber 2, and the energy irradiated on the specimen 4 is measured by an electron beam detector 7. Here, influences due to the visible light, ultraviolet light or the like in the chamber 2 are prevented, by having the electron beam E detected by the electron beam detector 7, by covering the detection surface 7a of the electron beam detector 7 with an electron beam blocking film 7b. Thus, the electron energy irradiated on the specimen 4 can be measured accurately. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、試料に照射された電子線エネルギーを測定することのできる電子線照射システムに関する。   The present invention relates to an electron beam irradiation system capable of measuring electron beam energy irradiated on a sample.

従来の電子線照射システムとして、試料及び電子線検出器を載置したステージをチャンバ内に配置し、当該ステージを移動させながら試料に電子線を照射して、その際における電子線を電子線検出器によって検出するものが知られている。（例えば、特許文献１参照）。
特許第３５２２０４５号公報 As a conventional electron beam irradiation system, a stage on which a sample and an electron beam detector are placed is placed in a chamber, and the sample is irradiated with an electron beam while moving the stage, and the electron beam at that time is detected. What is detected by a vessel is known. (For example, refer to Patent Document 1).
Japanese Patent No. 3522045

しかしながら、上述したような電子線照射システムにおいては、電子線検出器が可視光や紫外光等をも検出してしまい、試料に照射された電子線エネルギーを正確に測定することができないおそれがある。   However, in the electron beam irradiation system as described above, the electron beam detector may detect visible light, ultraviolet light, etc., and there is a possibility that the electron beam energy irradiated to the sample cannot be accurately measured. .

そこで、本発明は、試料に照射された電子線エネルギーを正確に測定することのできる電子線照射システムを提供することを目的とする。   Then, an object of this invention is to provide the electron beam irradiation system which can measure the electron beam energy irradiated to the sample correctly.

上記目的を達成するために、本発明に係る電子線照射システムは、電子線を出射する電子線源と、電子線が照射される試料を収容するチャンバと、チャンバ内に配置され、電子線を検出する電子線検出器と、を備え、電子線検出器の検出面は、電子線を透過させ且つ光を遮断する導電性遮光膜で覆われることを特徴とする。   In order to achieve the above object, an electron beam irradiation system according to the present invention includes an electron beam source that emits an electron beam, a chamber that houses a sample that is irradiated with the electron beam, and an electron beam that is disposed in the chamber. And a detection surface of the electron beam detector is covered with a conductive light-shielding film that transmits the electron beam and blocks light.

この電子線照射システムでは、チャンバ内に収容された試料に電子線が照射され、その試料にむけて照射された電子線エネルギーを、電子線検出器によって測定する。このとき、電子線検出器の検出面が、導電性遮光膜で覆われているため、当該電子線検出器にて電子線を検出する際に、可視光や紫外光等から影響を受けることを防止することができる。これによって、試料に照射された電子線エネルギーを正確に測定することができる。   In this electron beam irradiation system, a sample accommodated in a chamber is irradiated with an electron beam, and the electron beam energy irradiated toward the sample is measured by an electron beam detector. At this time, since the detection surface of the electron beam detector is covered with a conductive light-shielding film, it is affected by visible light, ultraviolet light, or the like when the electron beam is detected by the electron beam detector. Can be prevented. Thereby, the electron beam energy irradiated to the sample can be accurately measured.

ここで、電子線検出器としては、例えばシリコンフォトダイオードが挙げられる。   Here, as an electron beam detector, a silicon photodiode is mentioned, for example.

また、本発明に係る電子線照射システムにおいては、導電性遮光膜は、接地電位とされていることが好ましい。このような構成によれば、電子線源による電子線の照射に伴って大量のイオンが発生した場合であっても、その影響を軽減し、試料に照射された電子線エネルギーを正確に測定することができる。   In the electron beam irradiation system according to the present invention, it is preferable that the conductive light shielding film has a ground potential. According to such a configuration, even when a large amount of ions are generated along with the irradiation of the electron beam from the electron beam source, the influence is reduced and the electron beam energy irradiated to the sample is accurately measured. be able to.

また、本発明に係る電子線照射システムにおいては、電子線検出器は、電子線源の電子線出射軸線上に配置されていることが好ましい。このような構成によれば、試料に照射されるのと同等の電子線が電子線検出器に照射されることとなるため、電子線検出器による測定結果から試料に照射された電子線エネルギーを正確に導き出すことができる。   In the electron beam irradiation system according to the present invention, the electron beam detector is preferably arranged on the electron beam emission axis of the electron beam source. According to such a configuration, since the electron beam detector is irradiated with an electron beam equivalent to that applied to the sample, the electron beam energy applied to the sample is calculated from the measurement result by the electron beam detector. Can be accurately derived.

また、本発明に係る電子線照射システムにおいては、電子線源の電子線出射軸線と交差する搬送軸線に沿って試料を搬送する搬送手段を備え、電子線検出器は、搬送軸線上に位置するように搬送手段に配置されていることが好ましい。このような構成によれば、搬送手段の移動にともない、搬送手段上に載置された試料及び電子線検出器は、いずれも電子線源の電子線出射軸線上に配置され、電子線源から直接電子線を照射される。これによって、電子線検出器に、試料と同等の電子線が照射されこととなるため、電子線検出器による測定結果から試料に照射された電子線エネルギーを正確に導き出すことができる。   The electron beam irradiation system according to the present invention further includes a transport unit that transports a sample along a transport axis that intersects the electron beam emission axis of the electron beam source, and the electron beam detector is located on the transport axis. It is preferable that it is arrange | positioned in a conveyance means. According to such a configuration, the sample and the electron beam detector placed on the conveyance means are both disposed on the electron beam emission axis of the electron beam source along with the movement of the conveyance means. Direct electron irradiation. As a result, the electron beam detector is irradiated with an electron beam equivalent to the sample, so that the electron beam energy irradiated to the sample can be accurately derived from the measurement result by the electron beam detector.

また、本発明に係る電子線照射システムにおいては、電子線源の電子線出射軸線と交差する搬送軸線に沿って試料を搬送する搬送手段を備え、電子線検出器は、搬送軸線と交差する方向に沿って並設されるように搬送手段に複数配置されていることが好ましい。このような構成によれば、搬送手段の搬送軸線と交差する方向に沿って複数の電子線検出器が並設されているため、これらの電子線検出器によって、搬送軸線と交差する方向における試料に照射された電子線エネルギー分布を導き出すことができる。   In the electron beam irradiation system according to the present invention, the electron beam detector includes transport means for transporting the sample along a transport axis that intersects the electron beam emission axis of the electron beam source, and the electron beam detector has a direction that intersects the transport axis. It is preferable that a plurality of conveying means are arranged so as to be arranged in parallel. According to such a configuration, since the plurality of electron beam detectors are arranged in parallel along the direction intersecting with the transport axis of the transport means, the sample in the direction intersecting with the transport axis by these electron beam detectors. Can be derived.

また、電子線源の電子線出射軸線上に対して前記電子線検出器を進退させる移動手段を備えることが好ましい。このような構成によれば、電子線出射軸線上に配置され、電子線源から直接電子線を照射されている電子線検出器が、移動手段によって電子線出射軸線上に対して進退する。電子線検出器が電子線出射軸線に対して退いている間に、試料を電子線出射軸線上に配置することができ、電子線源から直接電子線が照射される。これによって、電子線検出器に、試料と同等の電子線が照射されこととなるため、電子線検出器による測定結果から試料に照射された電子線エネルギーを正確に導き出すことができる。例えば、試料が搬送される場合、試料が電子線出射軸線上に到達する前に電子線検出器を配置させることにより、条件通りの電子線出力が出ているか否かを確認することができ、到達した後に電子線検出器を配置させることにより、試料に電子線が照射されている間に条件が変化していないか否かを確認することができる。   Moreover, it is preferable to provide a moving means for moving the electron beam detector back and forth with respect to the electron beam emission axis of the electron beam source. According to such a configuration, the electron beam detector that is arranged on the electron beam emission axis and is directly irradiated with the electron beam from the electron beam source moves forward and backward with respect to the electron beam emission axis. While the electron beam detector is retracted with respect to the electron beam emission axis, the sample can be placed on the electron beam emission axis, and the electron beam is directly irradiated from the electron beam source. As a result, the electron beam detector is irradiated with an electron beam equivalent to the sample, so that the electron beam energy irradiated to the sample can be accurately derived from the measurement result by the electron beam detector. For example, when the sample is transported, by arranging the electron beam detector before the sample reaches the electron beam emission axis, it can be confirmed whether or not the electron beam output according to the condition is output, By locating the electron beam detector after reaching, it can be confirmed whether or not the condition is changed while the sample is irradiated with the electron beam.

本発明によれば、試料に照射された電子線エネルギーを正確に測定することができる。   According to the present invention, it is possible to accurately measure the electron beam energy applied to the sample.

以下、本発明に係る電子線照射システムの好適な実施形態について、図面を参照して詳細に説明する。なお、各図において同一又は相当部分には同一符号を付し、重複する説明を省略する。
［第１の実施形態］ DESCRIPTION OF EMBODIMENTS Hereinafter, preferred embodiments of an electron beam irradiation system according to the present invention will be described in detail with reference to the drawings. In addition, in each figure, the same code | symbol is attached | subjected to the same or an equivalent part, and the overlapping description is abbreviate | omitted.
[First Embodiment]

図１に示されるように、電子線照射システム１は、内部に空間を有するチャンバ２と、チャンバ２の内部に収容され移動方向Ｒへ向かって移動可能とされたステージ（搬送手段）３と、ステージ３の上面である載置面３ａに載置される試料４と、チャンバ２の上部に設けられて試料４に電子線Ｅを照射する電子線源６と、ステージ３の載置面３ａに載置されて電子線Ｅを検出する電子線検出器７と、電子線検出器７からの検出信号に基づいて当該電子線検出器７に照射された電子線Ｅのエネルギーを測定する測定器８とを備えている。   As shown in FIG. 1, an electron beam irradiation system 1 includes a chamber 2 having a space inside, a stage (conveying means) 3 accommodated in the chamber 2 and movable in the moving direction R, The sample 4 placed on the placement surface 3 a which is the upper surface of the stage 3, the electron beam source 6 provided on the upper portion of the chamber 2 for irradiating the sample 4 with the electron beam E, and the placement surface 3 a of the stage 3 An electron beam detector 7 that is placed and detects the electron beam E, and a measuring device 8 that measures the energy of the electron beam E irradiated to the electron beam detector 7 based on a detection signal from the electron beam detector 7. And.

チャンバ２は、電子線Ｅと試料４との反応が酸素によって阻害されないように、酸素濃度を低下させるべくその内部が窒素やアルゴン等によって置換された不活性ガス雰囲気とされている。   The chamber 2 has an inert gas atmosphere in which the inside is replaced with nitrogen, argon or the like so as to reduce the oxygen concentration so that the reaction between the electron beam E and the sample 4 is not inhibited by oxygen.

電子線検出器７は、シリコンフォトダイオードであって、検出面７ａに電子線Ｅが照射され、そのエネルギーによって生成された電子−正孔対（入射エネルギー３．６ｅＶに対して１対生成）に基づく検出信号をオシロスコープ等の測定器８に送信して出力電流を検出させることによって、電子線Ｅの入射エネルギーを測定させるものである。なお、シリコンフォトダイオードにより測定される電子線エネルギーは、その受光面を単位面積とする、照射された電子線Ｅのエネルギーと言え、そのエネルギーは、単なる電子の個数ではなく、その加速電圧も反映したエネルギー、つまり単位面積あたりの電子線Ｅの総熱量と同意義となる。例えば３．６ｋｅＶのエネルギーを持つ１個の電子が入射した場合は１０００個の電子に増倍して出力され、３６ｋｅＶのエネルギーを持つ１個の電子が入射した場合ならば１００００個の電子に増倍して出力される。つまり、各電子毎にそのエネルギーに応じた電子数が生成され出力されるため、実際に試料に照射される総熱量を直接測定することができる。   The electron beam detector 7 is a silicon photodiode, and the detection surface 7a is irradiated with the electron beam E, and an electron-hole pair generated by the energy (one pair is generated with respect to incident energy of 3.6 eV). The incident energy of the electron beam E is measured by transmitting a detection signal based on this to a measuring device 8 such as an oscilloscope to detect the output current. The electron beam energy measured by the silicon photodiode can be said to be the energy of the irradiated electron beam E having the light receiving surface as a unit area, and the energy reflects not only the number of electrons but also the acceleration voltage. Energy, that is, the total amount of heat of the electron beam E per unit area. For example, when one electron having an energy of 3.6 keV is incident, it is multiplied by 1000 electrons and output. When one electron having an energy of 36 keV is incident, it is increased to 10,000 electrons. The output is doubled. That is, since the number of electrons corresponding to the energy is generated and output for each electron, the total amount of heat actually irradiated on the sample can be directly measured.

ステージ３は、載置面３ａの移動方向Ｒに対する幅方向の中心位置と、電子線源６の電子線出射方向に向かって延在する電子線出射軸線Ｃ１とが交わるように配置されている。従って、ステージ３が移動方向Ｒへ向かって移動すると、その載置面３ａに対して描かれる電子線Ｅの照射位置の軌跡は、図２に示される、移動方向Ｒに対する中心線である搬送軸線Ｃ２と一致する。   The stage 3 is arranged so that the center position in the width direction with respect to the moving direction R of the mounting surface 3a and the electron beam emission axis C1 extending in the electron beam emission direction of the electron beam source 6 intersect. Therefore, when the stage 3 moves in the moving direction R, the locus of the irradiation position of the electron beam E drawn on the mounting surface 3a is the transport axis that is the center line with respect to the moving direction R shown in FIG. It matches C2.

図２に示されるように、ステージ３の載置面３ａ中央部に試料４が載置され、載置面３ａ右端部に電子線検出器７が載置されており、試料４と検出器７は、いずれも搬送軸線Ｃ２上に載置されている。従って、ステージ３が移動方向Ｒへ移動するに伴って電子線検出器７と試料４とは、電子線源６の電子線出射軸線Ｃ１と交差する搬送軸線Ｃ２に沿って搬送され、それぞれ異なるタイミングで電子線源６から直接電子線Ｅを照射されることとなる。また、ステージ３の移動速度を一定とすれば、両者に照射される電子線Ｅの単位面積あたりのエネルギーは同一となる。これによって電子線検出器７に、試料４に照射される電子線エネルギーと同等の電子線エネルギーが照射されることとなるため、電子線検出器７の測定結果から試料４に照射された電子線エネルギーを正確に導き出すことができる。   As shown in FIG. 2, the sample 4 is placed at the center of the placement surface 3a of the stage 3, and the electron beam detector 7 is placed at the right end of the placement surface 3a. Are both placed on the transport axis C2. Therefore, as the stage 3 moves in the moving direction R, the electron beam detector 7 and the sample 4 are transported along the transport axis C2 that intersects the electron beam emission axis C1 of the electron beam source 6, and each has a different timing. Thus, the electron beam E is directly irradiated from the electron beam source 6. Further, if the moving speed of the stage 3 is constant, the energy per unit area of the electron beam E irradiated to both is the same. As a result, the electron beam energy equivalent to the electron beam energy irradiated to the sample 4 is irradiated to the electron beam detector 7, so that the electron beam irradiated to the sample 4 from the measurement result of the electron beam detector 7. Energy can be derived accurately.

ここで、電子線検出器７の検出面７ａの表面は、アルミ蒸着によって形成された厚さ５０ｎｍ以下の導電性遮光膜７ｂに覆われている。この導電性遮光膜７ｂは、電子線Ｅは透過させるが可視光や紫外光は遮断することができるという特性を有しており、これによって、電子線検出器７は可視光や紫外光等によって影響を受けることなく、電子線Ｅによるエネルギーのみを正確に測定することができる。更に、導電性遮光膜７ｂは、接地電位とされているため、電子線Ｅの照射に伴って大量のイオンが発生した場合であっても、その影響も軽減している。   Here, the surface of the detection surface 7a of the electron beam detector 7 is covered with a conductive light-shielding film 7b having a thickness of 50 nm or less formed by aluminum vapor deposition. The conductive light-shielding film 7b has a characteristic that it can transmit the electron beam E but can block the visible light and the ultraviolet light, so that the electron beam detector 7 can detect the visible light and the ultraviolet light. Only the energy from the electron beam E can be accurately measured without being affected. Furthermore, since the conductive light-shielding film 7b is at the ground potential, even when a large amount of ions are generated as a result of irradiation with the electron beam E, the influence is reduced.

以上によって、電子線照射システム１は、可視光、紫外光及びイオン等の影響を受けることなく、試料４に照射された電子線エネルギーを正確に測定することができる。   As described above, the electron beam irradiation system 1 can accurately measure the electron beam energy irradiated on the sample 4 without being affected by visible light, ultraviolet light, ions, or the like.

[第２の実施形態]
第２の実施形態に係る電子線照射システム１は、ステージ３の載置面３ａ上に更に複数の電子線検出器９が設けられている点で、第１の実施形態に係る電子線照射システム１と主に相違している。 [Second Embodiment]
The electron beam irradiation system 1 according to the second embodiment is that an electron beam irradiation system 1 according to the first embodiment is further provided with a plurality of electron beam detectors 9 on the mounting surface 3a of the stage 3. Mainly different from 1.

すなわち、第２の実施形態に係る電子線照射システム１においては、図３に示されるように、ステージ３の載置面３ａにおいて、電子線検出器７から搬送軸線Ｃ２と直交する方向に沿って並設されるように電子線検出器９が複数配置されている。これによって、搬送軸線Ｃ２と直交する方向における試料４に照射された電子線エネルギー分布を導き出すことができる。なお、電子線検出器９はフォトダイオードであり、その検出面９ａは導電性遮光膜９ｂで覆われている。   That is, in the electron beam irradiation system 1 according to the second embodiment, as shown in FIG. 3, on the placement surface 3 a of the stage 3, along the direction orthogonal to the transport axis C <b> 2 from the electron beam detector 7. A plurality of electron beam detectors 9 are arranged in parallel. Thereby, the electron beam energy distribution irradiated to the sample 4 in the direction orthogonal to the conveyance axis C2 can be derived. The electron beam detector 9 is a photodiode, and its detection surface 9a is covered with a conductive light-shielding film 9b.

[第３の実施形態]
第３の実施形態に係る電子線照射システム１は、電子線検出器７がステージ３の載置面３ａ上に載置されていない点で、第１の実施形態に係る電子線照射システム１と主に相違している。 [Third embodiment]
The electron beam irradiation system 1 according to the third embodiment is different from the electron beam irradiation system 1 according to the first embodiment in that the electron beam detector 7 is not placed on the placement surface 3 a of the stage 3. Mainly different.

すなわち、第３の実施形態に係る電子線照射システム１においては、電子線検出器７が、チャンバ２の底面における電子線源６直下の位置に配置されている。また、電子線検出器７は移動アーム（移動手段）１１と接続されている。この移動アーム１１は、一端が電子線検出器７と接続されたアーム１１ａと、チャンバ２の底面に回動可能に固定されるとともにアーム１１ａの他端と接続された回動軸１１ｂとからなる。   That is, in the electron beam irradiation system 1 according to the third embodiment, the electron beam detector 7 is disposed at a position directly below the electron beam source 6 on the bottom surface of the chamber 2. The electron beam detector 7 is connected to a moving arm (moving means) 11. The moving arm 11 includes an arm 11a having one end connected to the electron beam detector 7, and a rotating shaft 11b fixed to the bottom surface of the chamber 2 and rotatably connected to the other end of the arm 11a. .

移動アーム１１は、ステージ３が電子線Ｅの照射位置に向かって移動してきたときに、そのステージ３と電子線検出器７とが接触しないように、回動軸１１ｂの回動によって電子線源６直下の位置に対して電子線検出器７を進退させるものである。   When the stage 3 moves toward the irradiation position of the electron beam E, the movable arm 11 is rotated by the rotation shaft 11b so that the stage 3 and the electron beam detector 7 do not come into contact with each other. The electron beam detector 7 is moved forward and backward with respect to a position immediately below 6.

以上のような構成により、電子線源６から直接電子線Ｅを照射されている電子線検出器７が、移動アーム１１によって電子線源６直下の位置に対して退き、その後、ステージ３に載置された試料４が電子線源６から直接電子線Ｅを照射される。また、ステージ３が通過した後に再び電子線検出器７を電子線源６直下の位置に配置する。これによって、電子線検出器７に、試料４と同等の電子線Ｅが照射されることとなるため、電子線検出器７の測定結果から試料４に照射された電子線エネルギーを正確に導き出すことができる。   With the configuration as described above, the electron beam detector 7 that is directly irradiated with the electron beam E from the electron beam source 6 is retracted from the position immediately below the electron beam source 6 by the moving arm 11, and then mounted on the stage 3. The placed sample 4 is directly irradiated with the electron beam E from the electron beam source 6. Further, after the stage 3 passes, the electron beam detector 7 is again arranged at a position immediately below the electron beam source 6. As a result, the electron beam detector 7 is irradiated with the electron beam E equivalent to that of the sample 4, and therefore the electron beam energy irradiated to the sample 4 can be accurately derived from the measurement result of the electron beam detector 7. Can do.

更に、試料４が電子線源６直下の位置に到達する前に電子線検出器７を配置させることにより、条件通りの電子線出力が出ているか否かを確認することができ、到達した後に電子線検出器７を配置させることにより、試料４に電子線Ｅが照射されている間に条件が変化していないか否かを確認することができる。   Furthermore, by arranging the electron beam detector 7 before the sample 4 reaches the position directly below the electron beam source 6, it is possible to confirm whether or not the electron beam output according to the condition is being output. By arranging the electron beam detector 7, it can be confirmed whether or not the condition is changed while the sample 4 is irradiated with the electron beam E.

本発明は、上述した実施形態に限定されるものではない。例えば、電子線照射システム１においては、アルミに代えてクロムやタングステン等によって導電性遮光膜７ｂ，９ｂを形成してもよい。   The present invention is not limited to the embodiment described above. For example, in the electron beam irradiation system 1, the conductive light shielding films 7b and 9b may be formed of chromium, tungsten or the like instead of aluminum.

また、電子線照射システム１においては、電子線検出器７の検出結果を電子線源６にフィードバックさせることによって電子線Ｅの出射量を制御してもよい。   In the electron beam irradiation system 1, the emission amount of the electron beam E may be controlled by feeding back the detection result of the electron beam detector 7 to the electron beam source 6.

また、電子線検出器７，９はシリコンフォトダイオードに限定されず、ＣＣＤ素子(この場合は二次元検出も可能)やゲルマニウム、ガリウム砒素、ＣｄＴe、ＣｄＺｎＴｅ等を用いた検出素子であってもよい。   The electron beam detectors 7 and 9 are not limited to silicon photodiodes, and may be CCD elements (in this case, two-dimensional detection is possible), detection elements using germanium, gallium arsenide, CdTe, CdZnTe, or the like. .

なお、第３の実施形態において、チャンバ２の底面における電子線源６直下の位置に、移動アーム１１に接続させることなく電子線検出器７を配置し、その電子線検出器７の上方をステージ３が通過するような構成としてもよい。このような構成によっても、第３の実施形態に係る電子線照射システム１と同様の効果を得ることができる。   In the third embodiment, the electron beam detector 7 is disposed without being connected to the moving arm 11 at a position directly below the electron beam source 6 on the bottom surface of the chamber 2, and the stage above the electron beam detector 7 is a stage. It is good also as a structure which 3 passes. Even with such a configuration, the same effect as that of the electron beam irradiation system 1 according to the third embodiment can be obtained.

第１の実施形態に係る電子線照射システムの概略構成図である。It is a schematic block diagram of the electron beam irradiation system which concerns on 1st Embodiment. 図１に示された電子線照射システムのステージを上方から見た図である。It is the figure which looked at the stage of the electron beam irradiation system shown by FIG. 1 from upper direction. 第２の実施形態に係る電子線照射システムのステージを上方から見た図である。It is the figure which looked at the stage of the electron beam irradiation system concerning a 2nd embodiment from the upper part. 第３の実施形態に係る電子線照射システムのステージを上方から見た図である。It is the figure which looked at the stage of the electron beam irradiation system concerning a 3rd embodiment from the upper part.

符号の説明Explanation of symbols

１…電子線照射システム、２…チャンバ、３…ステージ（搬送手段）、４…試料、６…電子線源、７，９…電子線検出器、７ａ，９ａ…検出面、７ｂ，９ｂ…導電性遮光膜、１１…移動アーム（移動手段）。   DESCRIPTION OF SYMBOLS 1 ... Electron beam irradiation system, 2 ... Chamber, 3 ... Stage (conveyance means), 4 ... Sample, 6 ... Electron beam source, 7, 9 ... Electron beam detector, 7a, 9a ... Detection surface, 7b, 9b ... Conductivity Light-shielding film, 11... Moving arm (moving means).

Claims (7)

電子線を出射する電子線源と、
前記電子線が照射される試料を収容するチャンバと、
前記チャンバ内に配置され、前記電子線を検出する電子線検出器と、を備え、
前記電子線検出器の検出面は、前記電子線を透過させ且つ光を遮断する導電性遮光膜で覆われることを特徴とする電子線照射システム。 An electron beam source that emits an electron beam;
A chamber for storing a sample irradiated with the electron beam;
An electron beam detector disposed in the chamber and detecting the electron beam,
An electron beam irradiation system, wherein a detection surface of the electron beam detector is covered with a conductive light-shielding film that transmits the electron beam and blocks light. 前記電子線検出器は、シリコンフォトダイオードであることを特徴とする請求項１記載の電子線照射システム。   The electron beam irradiation system according to claim 1, wherein the electron beam detector is a silicon photodiode. 前記導電性遮光膜は、接地電位とされていることを特徴とする請求項１又は２記載の電子線照射システム。   The electron beam irradiation system according to claim 1, wherein the conductive light shielding film is at a ground potential. 前記電子線検出器は、前記電子線源の電子線出射軸線上に配置されていることを特徴とする請求項１〜３のいずれか一項記載の電子線照射システム。   The electron beam irradiation system according to any one of claims 1 to 3, wherein the electron beam detector is disposed on an electron beam emission axis of the electron beam source. 前記電子線源の電子線出射軸線と交差する搬送軸線に沿って前記試料を搬送する搬送手段を備え、
前記電子線検出器は、前記搬送軸線上に位置するように前記搬送手段に配置されていることを特徴とする請求項１〜３のいずれか一項記載の電子線照射システム。 Transport means for transporting the sample along a transport axis that intersects the electron beam emission axis of the electron beam source;
The electron beam irradiation system according to any one of claims 1 to 3, wherein the electron beam detector is disposed on the transport unit so as to be positioned on the transport axis. 前記電子線源の電子線出射軸線と交差する搬送軸線に沿って前記試料を搬送する搬送手段を備え、
前記電子線検出器は、前記搬送軸線と交差する方向に沿って並設されるように前記搬送手段に複数配置されていることを特徴とする請求項１〜３のいずれか一項記載の電子線照射システム。 Transport means for transporting the sample along a transport axis that intersects the electron beam emission axis of the electron beam source;
4. The electron according to claim 1, wherein a plurality of the electron beam detectors are arranged on the transport unit so as to be arranged in parallel along a direction intersecting the transport axis. X-ray irradiation system. 前記電子線源の電子線出射軸線上に対して前記電子線検出器を進退させる移動手段を備えることを特徴とする請求項１〜３のいずれか一項記載の電子線照射システム。   The electron beam irradiation system according to claim 1, further comprising moving means for moving the electron beam detector forward and backward with respect to an electron beam emission axis of the electron beam source.
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JP7377730B2 (en) 2020-02-07 2023-11-10 日立造船株式会社 How to decide when to replace a nozzle-type electron beam emission device

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JPH10213666A (en) * 1997-01-30 1998-08-11 Yazaki Corp Alpha-ray sensor

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JPH09293652A (en) * 1996-04-24 1997-11-11 Fujitsu Ltd Charged particle beam exposure device and method thereof
JPH10213666A (en) * 1997-01-30 1998-08-11 Yazaki Corp Alpha-ray sensor

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Publication number Priority date Publication date Assignee Title
JP7377730B2 (en) 2020-02-07 2023-11-10 日立造船株式会社 How to decide when to replace a nozzle-type electron beam emission device

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