200832512 九、發明說明 【發明所屬之技術領域】 本發明關於能夠測定照射於試料之電子射線能量的電 子射線照射系統。 【先前技術】 作爲以往的電子射線照射系統，將載置有試料及電子 射線檢測器的平台配置於真空室內，一邊使該平台移動， 一邊對試料照射電子射線，藉由電子射線檢測器檢測此時 的電子射線者爲眾所皆知。（例如，參照專利文獻1 )。 〔專利文獻1〕日本專利第3 522045號公報 【發明內容】 〔發明所欲解決之課題〕 但，在上述這種的電子射線照射系統，電子射線檢測 器亦會檢測到可見光或紫外光等，會有無法正確地測定到 已照射於試料的電子射線能量之虞。 因此，本發明之目的在於提供，正確地測定已照射於 試料之電子射線能量的電子射線照射系統。 〔用以解決課題之手段〕 爲了達到上述目的，本發明之電子射線照射系統，其 特徵爲：具備有：射出電子射線之電子射線源；收容欲照 射電子射線的試料之真空室；及配置於真空室內，用來檢 -5- 200832512 測電子射線之電子射線檢測器， 電子射線檢測器的檢測面是藉由可使電子射線透過且 遮斷光之導電性遮光膜所覆蓋。 在此電子射線照射系統，對已被收容於真空室內之試 料，照射電子射線，將朝該試料所照射的亀子射線能量， 藉由電子射線檢測器進行測定。此時，由於電子射線檢測 器的檢測面受到導電性遮光膜所覆蓋，故，當以該電子射 線檢測器檢測電子射線之際，可防止受到可見光或紫外光 等所影響。藉此，能正確地測定已被照射於試料之電子射 線能量。 在此，作爲電子射線檢測器，可舉出例如矽發光二極 體。 又，在本發明之電子射線照射系統，理想爲，導電性 遮光膜作爲接地電位。若根據這種結構的話，即使在伴隨 利用電子射線源之電子射線的照射，產生大量的離子之情 況，也能減輕其影響，正確地測定已照射於試料之電子射 線能量。 又，在本發明之電子射線照射系統，電子射線檢測器 是配置於電子射線源的電子射線射出軸線上爲佳。若根據 這種結構的話，由於與被罩設置試料者同等的電子射線被 照射於電子射線檢測器，故，可由利用電子射線檢測器之 測定結果，正確地導出被照射於試料之電子射線能量。 又，在本發明之電子射線照射系統，具備沿著與電子 射線源的電子射線射出軸線交叉的搬送軸線搬送試料之搬 -6- 200832512 送手段，電子射線檢測器是以位於搬送軸線上的方式配置 於搬送手段爲佳。若根據這種結構的話，伴隨搬送手段的 移動，已被載置於搬送手段上之試料及電子射線檢測器， 皆被配置於電子射線源的電子射線射出軸線上，由電子射 線源，直接照射電子射線。藉此，對電子射線檢測器，照 射與試料同等的電子射線，因此，由利用電子射線檢測器 之測定結果，可正確地導出被照射於試料之電子射線能量 〇 又，在本發明之電子射線照射系統，具備有沿著與電 子射線源的電子射線射出軸線交叉的搬送軸線搬送試料之 搬送手段，電子射線檢測器是以沿著與搬送軸線交叉的方 向並列設置之方式，複數個配置於搬送手段爲佳。若根據 這種結構的話，由於沿著與搬送手段的搬送軸線交叉的方 向，並列設置複數個電子射線檢測器，故，藉由這些的電 子射線檢測器，可導出照射於與搬送軸線交叉的方向之試 料的電子射線能量分布。 又，具備對電子射線源的電子射線射出軸線上，使前 述電子射線檢測器進退之移動手段爲佳。若根據這種結構 的話，配置於電子射線射出軸線上、且由電子射線源直接 照射電子射線之電子射線檢測器，藉由移動手段，來對電 子射線射出軸線上進退。在電子射線檢測器對電子射線射 出軸線後退的期間，可將試料配置於電子射線射出軸線上 ，由電子射線源，直接照射電子射線。藉此，對電子射線 檢測器，照射與試料同等的電子射線，因此，由利用電子 200832512 射線檢測器之測定結果，可正確地導出被照射於試料之電 子射線能量。例如，在試料被搬送的情況，藉由在試料到 達電子射線射出軸線上之前，配置電子射線檢測器，可確 認是否產生所設定之條件的電子射線輸出，藉由到達後， 配置電子射線檢測器，可確認到，在對試料照射電子射線 期間，條件是否變化。 〔發明效果〕 若根據本發明的話，能夠正確地測定已照射於試料之 電子射線能量。 【實施方式】 以下，參照圖面詳細說明關於本發明之電子射線照射 系統的理想實施形態。再者，在各圖，對相同或相當部分 賦予相同符號，省略重複的説明。 〔第1的實施形態〕 如圖1所不，電子射線照射系統1，具備有：在內部 具有空間的真空室2;被收容於真空室2的內部，可朝移 動方向R移動之平台（搬送手段）3;載置於平台3的上 面即載置面3a之試料4;設置於真空室2的上部，對試 料4照射電子射線E之電子射線源6 ;載置於平台3的載 置面3 a，檢測電子射線E之電子射線檢測器7 ;及根據來 自於電子射線檢測器7之檢測信號，測定照射於該電子射 -8 - 200832512 線檢測器7之電子射線E的能量之測定器8 真空室2，爲了電子射線E與試料4之 阻礙，爲降低氧濃度而將其內部做成藉由氮 換的不活性氣體環境。 電子射線檢測器7爲矽發光二極體，I 照射電子射線E，將依據因其能量所產生；; (入對射能量3.6eV產生1對）之檢測信號 器等的測定器8，檢測輸出電流，藉此測定 射入能量者。再者，藉由矽發光二極體所測 能量，是指將其受光面作爲單位面積所照射 的能量，該能量並非僅爲電子的數量，而是 電壓之能量，即與每單位面積的電子射線E 意義。例如，具有3.6keV的能量之1個電 ，增加至1 0 00個的電子後輸出，若爲具有 之1個的電子射入之情況，則增加至1 0000 出。即，由於針對各電子，產生因應其能量 以輸出，故，可直接測定到實際照射於試料 平台3是以載置面3a的對移動方向R 中心位置與朝電子射線源6的電子射線射出 子射線射出軸線C1交叉的方式加以配置。 3朝移動方向R移動時，對該載置面3a所 線E的照射位置的軌跡會與圖2所示之對$ 中心線即搬送軸線C2 —致。 如圖2所示，試料4載置於平台3的葷 反應不被氧所 或氬等予以置 討檢測面7a， 匕電子-電洞對 ，傳輸至示波 電子射線E的 定的電子射線 之電子射線E 亦反映其加速 的總熱量相同 子射入的場合 36keV的能量 個的電子後輸 之電子數並加 之總熱量。 之寬度方向之 方向延伸之電 因此，當平台 描繪之電子射 多動方向R的 它置面3 a中央 -9- 200832512 部，電子射線檢測器7載置於載置面3 a右端部，試料4 與檢測器7，皆載置於搬送軸線C 2上。因此，伴隨平台3 朝移動方向R移動，電子射線檢測器7與試料4會沿著與 電子射線源6的電子射線射出軸線C丨交叉之搬送軸線C2 被搬送’在各自不同的時間點，由電子射線源6，直接照 射電子射線E。又，將平台3的移動速度做成一定的話， 則照射於兩者之電子射線E的每單位面積的能量成爲相同 。藉此，對電子射線檢測器7，照射與照射於試料4的電 子射線能量同等的電子射線能量，因此，由電子射線檢測 器7的測定結果，可正確地導出照射到試料4之電子射線 能量。 在此，電子射線檢測器7的檢測面7 a的表面，是受 到藉由氧化鋁蒸鍍所形成的厚度5 Onm以下之導電性遮光 膜7b所覆蓋。此導電性遮光膜7b具有，可使電子射線E 透過，但可遮斷可見光或紫外光之特性，藉此，電子射線 檢測器7不易受到可見光或紫外光等所影響，正確地僅測 定電子射線E之能量。且，由於導電性遮光膜7b作爲接 地電位，故，即使在伴隨電子射線E的照射，產生大量的 離子之情況，也能減輕其影響。 根據以上說明，電子射線照射系統1不會受到可見光 、紫外光及離子等的影響，可正確地測定照射到試料4之 電子射線能量。 〔第2實施形態〕 -10- 200832512 第2實施形態之電子射線照射系統1，主要在平台3 的載置面3a上進一步設置有複數個電子射線檢測器9的 這一點上，與第1的實施形態之電子射線照射系統1不同 〇 即，在第2實施形態之電子射線照射系統1，如圖3 所示，在平台3的載置面3 a，以由電子射線檢測器7沿 著與搬送軸線C2正交的方向並列設置的方式，配置有複 數個電子射線檢測器9。藉此，能正確地導出照射到與搬 送軸線C2正交的方向之試料4之電子射線能量分布。再 者，電子射線檢測器9爲發光二極體，其檢測面9a受到 導電性遮光膜9b所覆蓋。 〔第3實施形態〕 第3實施形態之電子射線照射系統1，主要在電子射 線檢測器7未載置於平台3的載置面3a上的這一點，與 第1的實施形態之電子射線照射系統1不同。 即，在第3實施形態之電子射線照射系統1，電子射 線檢測器7配置於真空室2的底面之電子射線源6正下方 的位置。又，電子射線檢測器7是與移動臂（移動手段） 1 1連接。此移動臂1 1，是由一端與電子射線檢測器7連 接的臂11a、及可轉動地固定於真空室2的底面，並且與 臂11a的另一端連接之轉動軸nbm構成。 移動臂1 1是當平台3朝電子射線E的照射位置移動 時，藉由轉動軸1 1 b的轉動，使電子射線檢測器7對電子 -11 - 200832512 射線源6正下方的位置進退，使得該平台3與 測器7不會接觸者。 根據以上的這種結構，由電子射線源6直 射線E之電子射線檢測器7，藉由移動臂1 1， 源6正下方的位置後對，然後，已被載置於平 4，由電子射線源6直接照射電子射線E。又 通過後，再次將電子射線檢測器7配置於電子 下方的位置。藉此，對電子射線檢測器7，照 同等的電子射線E，因此，由電子射線檢測器 果，可正確地導出照射到試料4之電子射線能 且，藉由試料4到達電子射線源6正下方 配置電子射線檢測器7，可確認是否產生所設 電子射線輸出，藉由到達後，配置電子射線檢 確認到，在對試料照射電子射線期間，條件是 本發明不限於上述的實施形態。例如，在 射系統1，亦可藉由鉻或鎢等，代替氧化鋁， 性遮光膜7b，9b。 又’在電子射線照射系統1，亦可藉由使 測器7的檢測結果回饋至電子射線源6，來控 E的射出量。 又’電子射線檢測器7，9不限於矽發光 使用CCD元件（在此情況，亦可進行二次元 、砷化鎵、CdTe、CdZnTe等之檢測元件。 再者’在第3實施形態，亦可在真空室2 電子射線檢 接照射電子 對電子射線 台3之試料 ，在平台3 射線源6正 射與試料4 7的測定結 量。 的位置前， 定之條件的 測器7，可 否變化。 電子射線照 來形成導電 電子射線檢 制電子射線 二極體，可 檢測）、鍺 的底面之電 -12- 200832512 子射線源6正下方的位置，不與移動臂1 1連接地配置電 子射線檢測器7，使平台3通過該電子射線檢測器7的上 方。藉由這樣的結構，亦可獲得與第3實施形態之電子射 線照射系統1相同的效果。 〔産業上的利用可能性〕 若根據本發明的話，能夠正確地測定已照射於試料之 電子射線能量。 【圖式簡單說明】 圖1是第1的實施形態之電子射線照射系統的槪略構 成圖。 圖2是由上方觀看圖1所示的電子射線照射系統的平 台之圖。 圖3是由上方觀看第2實施形態之電子射線照射系統 的平台之圖。 圖4是由上方觀看第3實施形態之電子射線照射系統 的平台之圖。 【主要元件符號說明】 1 :電子射線照射系統 2 :真空室 3 :平台（搬送手段） 4 :試料 -13- 200832512 6 :電子射線源 7，9 :電子射線檢測器 7 a，9 a :檢測面 7b，9b :導電性遮光膜 1 1 :移動臂（移動手段） -14200832512 IX. Description of the Invention [Technical Field] The present invention relates to an electron beam irradiation system capable of measuring the energy of electron beams irradiated to a sample. [Prior Art] As a conventional electron beam irradiation system, a stage on which a sample and an electron beam detector are placed is placed in a vacuum chamber, and while the stage is moved, an electron beam is irradiated to the sample, and the electron beam detector detects the stage. The electron rayers are well known. (For example, refer to Patent Document 1). [Problem to be Solved by the Invention] However, in the above-described electron beam irradiation system, the electron beam detector detects visible light or ultraviolet light, and the like. There is a possibility that the electron beam energy that has been irradiated to the sample cannot be accurately measured. Accordingly, it is an object of the present invention to provide an electron beam irradiation system that accurately measures the energy of an electron beam that has been irradiated onto a sample. [Means for Solving the Problem] In order to achieve the above object, an electron beam irradiation system according to the present invention includes: an electron beam source that emits an electron beam; a vacuum chamber that accommodates a sample to be irradiated with an electron beam; and In the vacuum chamber, an electron beam detector for detecting electron beams is used. The detection surface of the electron beam detector is covered by a conductive light shielding film that allows electron rays to pass through and block light. In this electron beam irradiation system, an electron beam is irradiated to a sample accommodated in a vacuum chamber, and the energy of the ray beam irradiated to the sample is measured by an electron beam detector. At this time, since the detection surface of the electron beam detector is covered by the conductive light shielding film, when the electron beam detector detects the electron beam, it can be prevented from being affected by visible light or ultraviolet light. Thereby, the electron beam energy that has been irradiated onto the sample can be accurately measured. Here, as the electron beam detector, for example, a neon light emitting diode can be cited. Further, in the electron beam irradiation system of the present invention, it is preferable that the conductive light shielding film serves as a ground potential. According to this configuration, even when a large amount of ions are generated by irradiation with an electron beam using an electron beam source, the influence can be reduced, and the electron beam energy irradiated to the sample can be accurately measured. Further, in the electron beam irradiation system of the present invention, the electron beam detector is preferably disposed on the electron beam emission axis of the electron beam source. According to this configuration, since the electron beam equivalent to the sample to be placed on the cover is irradiated to the electron beam detector, the electron beam energy to be irradiated to the sample can be accurately derived from the measurement result by the electron beam detector. Further, the electron beam irradiation system of the present invention includes a transport means for transporting a sample along a transport axis intersecting the electron beam emission axis of the electron beam source, and the electron beam detector is located on the transport axis. It is better to arrange it in the transport means. According to this configuration, the sample and the electron beam detector that have been placed on the transport means are placed on the electron beam emission axis of the electron beam source, and are directly irradiated by the electron beam source, along with the movement of the transport means. Electron ray. As a result, the electron beam detector is irradiated with the same electron beam as the sample. Therefore, the electron beam energy to be irradiated to the sample can be accurately derived from the measurement result by the electron beam detector, and the electron beam of the present invention can be used. The irradiation system includes a transport means for transporting the sample along a transport axis that intersects the electron beam emission axis of the electron beam source, and the electron beam detectors are arranged in parallel along the direction intersecting the transport axis, and are arranged in plurality. The means is better. According to this configuration, since a plurality of electron beam detectors are arranged in parallel along the direction intersecting the transport axis of the transport means, the electron beam detectors can be used to guide the direction of the intersection with the transport axis. The electron beam energy distribution of the sample. Further, it is preferable to provide a moving means for causing the electron beam detector to advance and retreat to the electron beam emitting axis of the electron beam source. According to this configuration, the electron beam detector disposed on the electron beam emission axis and directly irradiated with the electron beam by the electron beam source moves forward and backward on the electron beam emission axis by the moving means. While the electron beam detector retreats from the electron beam emission axis, the sample can be placed on the electron beam emission axis, and the electron beam can be directly irradiated by the electron beam source. As a result, the electron beam detector is irradiated with the same electron beam as the sample. Therefore, the electron beam energy irradiated to the sample can be accurately derived from the measurement result of the electron detector of the electrons 200832512. For example, when the sample is transported, the electron beam detector is placed before the sample reaches the electron beam emission axis, and it is confirmed whether or not the electron beam output of the set condition is generated. After the arrival, the electron beam detector is disposed. It can be confirmed whether the condition changes during the irradiation of the electron beam to the sample. [Effect of the Invention] According to the present invention, the electron beam energy that has been irradiated onto the sample can be accurately measured. [Embodiment] Hereinafter, a preferred embodiment of an electron beam irradiation system according to the present invention will be described in detail with reference to the drawings. In the drawings, the same or corresponding components are designated by the same reference numerals, and the repeated description is omitted. [Embodiment 1] As shown in Fig. 1, the electron beam irradiation system 1 includes a vacuum chamber 2 having a space therein, and a platform that is accommodated in the vacuum chamber 2 and movable in the movement direction R (transport) Means 3; a sample 4 placed on the upper surface of the stage 3, that is, the mounting surface 3a; an electron beam source 6 disposed on the upper portion of the vacuum chamber 2, irradiating the sample 4 with the electron beam E; and a mounting surface placed on the stage 3 3 a, an electron beam detector 7 for detecting an electron beam E; and a measuring device for measuring the energy of the electron beam E irradiated to the electron beam -8 - 200832512 line detector 7 based on the detection signal from the electron beam detector 7 8 In the vacuum chamber 2, in order to reduce the oxygen concentration, the inside of the vacuum chamber 2 is made into an inert gas atmosphere in which nitrogen is exchanged. The electron beam detector 7 is a xenon light emitting diode, and the I emits an electron beam E, and the detector 8 is detected based on the signal due to its energy; (the pair of incident energy is 3.6 eV). Current, by which the energy input is measured. Furthermore, the energy measured by the light-emitting diode refers to the energy that the light-receiving surface is irradiated as a unit area, and the energy is not only the quantity of electrons but the energy of the voltage, that is, the electrons per unit area. Ray E meaning. For example, one electric power having an energy of 3.6 keV is added to the electronic output of 100 00, and if it is one electron injection, it is increased to 100,000. In other words, since the respective electrons are output in response to the energy, it is possible to directly measure that the actual irradiation of the sample stage 3 is the center position in the moving direction R of the mounting surface 3a and the electron beam emitting device toward the electron beam source 6. The ray emission axes C1 are arranged to intersect. 3 When moving in the moving direction R, the trajectory of the irradiation position of the line E on the placing surface 3a coincides with the center line C2 which is the center line shown in Fig. 2 . As shown in Fig. 2, the reaction of the sample 4 placed on the stage 3 is not subjected to the detection surface 7a by oxygen or argon, and the electron-hole pair is transmitted to the electron beam of the oscillating electron beam E. The electron ray E also reflects the number of electrons that are electrons after 36 keV of the total amount of heat that is accelerated by the same sub-injection plus the total heat. Therefore, the electron beam detector 7 is placed on the right end of the mounting surface 3 a, and the sample is placed on the right end of the mounting surface 3 a. 4 and the detector 7, both placed on the transport axis C 2 . Therefore, as the stage 3 moves in the moving direction R, the electron beam detector 7 and the sample 4 are conveyed along the transport axis C2 intersecting the electron beam emission axis C丨 of the electron beam source 6 at respective different time points. The electron beam source 6 directly illuminates the electron beam E. Further, when the moving speed of the stage 3 is made constant, the energy per unit area of the electron beams E irradiated to the two is the same. As a result, the electron beam detector 7 is irradiated with the electron beam energy equivalent to the electron beam energy irradiated to the sample 4. Therefore, the electron beam energy irradiated to the sample 4 can be accurately derived from the measurement result of the electron beam detector 7. . Here, the surface of the detecting surface 7a of the electron beam detector 7 is covered by the conductive light-shielding film 7b having a thickness of 5 Onm or less formed by alumina vapor deposition. The conductive light-shielding film 7b has a characteristic that the electron beam E can be transmitted, but the visible light or the ultraviolet light can be blocked. Therefore, the electron beam detector 7 is less susceptible to visible light or ultraviolet light, and the electron beam is accurately measured only. The energy of E. Further, since the conductive light-shielding film 7b serves as a ground potential, even when a large amount of ions are generated accompanying the irradiation of the electron beam E, the influence can be alleviated. According to the above description, the electron beam irradiation system 1 is not affected by visible light, ultraviolet light, ions, or the like, and the electron beam energy irradiated to the sample 4 can be accurately measured. [Second Embodiment] -10-200832512 The electron beam irradiation system 1 of the second embodiment mainly includes a plurality of electron beam detectors 9 on the mounting surface 3a of the stage 3, and the first one. In the electron beam irradiation system 1 of the second embodiment, the electron beam irradiation system 1 of the second embodiment is placed on the mounting surface 3a of the stage 3 by the electron beam detector 7 as shown in FIG. A plurality of electron beam detectors 9 are disposed in such a manner that the directions in which the transport axes C2 are orthogonal to each other are arranged in parallel. Thereby, the electron beam energy distribution of the sample 4 irradiated in the direction orthogonal to the transport axis C2 can be accurately derived. Further, the electron beam detector 9 is a light emitting diode, and the detecting surface 9a is covered by the conductive light shielding film 9b. [Embodiment 3] The electron beam irradiation system 1 of the third embodiment mainly emits electron beam irradiation in the first embodiment, in which the electron beam detector 7 is not placed on the mounting surface 3a of the stage 3. System 1 is different. In other words, in the electron beam irradiation system 1 of the third embodiment, the electron beam detector 7 is disposed at a position directly below the electron beam source 6 on the bottom surface of the vacuum chamber 2. Further, the electron beam detector 7 is connected to a moving arm (moving means) 1 1. The moving arm 1 1 is composed of an arm 11a whose one end is connected to the electron beam detector 7, and a rotating shaft nbm which is rotatably fixed to the bottom surface of the vacuum chamber 2 and which is connected to the other end of the arm 11a. The moving arm 1 1 is such that when the platform 3 moves toward the irradiation position of the electron beam E, the position of the electron beam detector 7 directly below the electron source 6 is advanced by the rotation of the rotating shaft 1 1 b. The platform 3 does not contact the detector 7. According to the above configuration, the electron beam detector 7 of the direct ray E of the electron ray source 6 is moved by the position of the arm 1 immediately below the source 6, and then placed on the flat 4, by the electron The ray source 6 directly illuminates the electron ray E. After that, the electron beam detector 7 is again placed at a position below the electrons. Thereby, the electron beam detector 7 is irradiated with the same electron beam E. Therefore, the electron beam detector can accurately derive the electron beam energy irradiated to the sample 4, and the sample 4 reaches the electron beam source 6 The electron beam detector 7 is disposed below to confirm whether or not the generated electron beam output is generated. After the arrival, the electron beam inspection is performed, and it is confirmed that the electron beam is irradiated to the sample, and the present invention is not limited to the above embodiment. For example, in the radiation system 1, the alumina, the light-shielding films 7b, 9b may be replaced by chromium or tungsten. Further, in the electron beam irradiation system 1, the emission amount of E can be controlled by feeding back the detection result of the detector 7 to the electron beam source 6. Further, the 'electron ray detectors 7, 9 are not limited to krypton illuminating CCD elements (in this case, detection elements such as secondary elements, gallium arsenide, CdTe, CdZnTe, etc. may be used. Further, in the third embodiment, In the vacuum chamber 2, the electron beam is irradiated to the sample irradiated with the electron pair electron beam stage 3, and the position of the measuring unit 7 can be changed before the position of the measuring unit 3 of the source 3 and the sample 4 is measured. The electron beam detector is formed by the radiation to form a conductive electron beam detecting electron beam diode, and the electron beam detector is disposed at a position directly below the sub-ray source 6 without being connected to the moving arm 1 1 . 7. The platform 3 is passed over the electron beam detector 7. With such a configuration, the same effects as those of the electron beam irradiation system 1 of the third embodiment can be obtained. [Industrial Applicability] According to the present invention, the electron beam energy that has been irradiated onto the sample can be accurately measured. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing the configuration of an electron beam irradiation system according to a first embodiment. Fig. 2 is a view of the stage of the electron beam irradiation system shown in Fig. 1 as viewed from above. Fig. 3 is a view of the stage of the electron beam irradiation system of the second embodiment as seen from above. Fig. 4 is a view of the stage of the electron beam irradiation system of the third embodiment as seen from above. [Explanation of main component symbols] 1 : Electron beam irradiation system 2 : Vacuum chamber 3 : Platform (transport means) 4 : Sample-13 - 200832512 6 : Electron beam source 7, 9 : Electron beam detector 7 a, 9 a : Detection Surface 7b, 9b: Conductive light-shielding film 1 1 : Moving arm (moving means) -14