JP2008127517A - Silicone composition for sealing semiconductor and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a silicone composition for sealing semiconductor excellent in adhesion to lead frames subjected to plating with Au or Ag, suitable for sealing a semiconductor element and to provide a highly reliable semiconductor device using the same. <P>SOLUTION: The composition comprises (A) a polyorganosiloxane having average ≥0.2 of alkenyl group bonded with a silicon atom in a molecule, (B) a polyorganosiloxane composed of an R<SB>2</SB>SiO<SB>2/2</SB>unit, an R<SB>3</SB>SiO<SB>1/2</SB>unit and an SiO<SB>4/2</SB>unit (in the formula R is the same or different (substituted)monovalent hydrocarbon group, and in the molecule, at least three are alkenyl groups.), and the amount of hydroxy groups bonding to a silicon atom is 50-3,000 ppm, (C) a polyorganohydrogensiloxane having at least two hydrogen atoms each bonding to a silicon atom in a molecules, and (D) a platinum-based catalyst. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention is excellent in adhesion to a lead frame plated with Au or Ag, which is a component of a semiconductor device, and uses a silicone composition for semiconductor encapsulation suitable as a semiconductor element sealant and the same. The present invention relates to a semiconductor device.

  Conventionally, as a sealant for semiconductor elements such as light emitting diodes and photocouplers, an addition reaction curable silicone composition has been used because of its good transparency and heat resistance (see, for example, Patent Document 1). .

However, lead frames, which are components of semiconductor devices, are generally plated with Au or Ag, but conventional addition reaction curable silicone compositions have adhesion to Au or Ag. When the package is exposed to a high temperature, peeling is likely to occur at the interface between the lead frame and the cured product of the silicone composition, resulting in a decrease in reliability.
JP 2004-143361 A

  An object of the present invention is to address such problems, and is excellent in adhesiveness with a lead frame plated with Au or Ag, and is suitable as a semiconductor element sealant. An object of the present invention is to provide a silicone composition for use and a highly reliable semiconductor device using the same.

  As a result of intensive investigations to achieve the above object, the present inventors have introduced a predetermined amount of hydroxyl groups, and blended with a polyorganosiloxane having a three-dimensional network structure composed of specific units, whereby Au or Ag. The present inventors have found that a silicone composition for semiconductor encapsulation and a semiconductor device using the same can be obtained with markedly improved adhesion to a lead frame plated with the above.

That is, the silicone composition for semiconductor encapsulation of the present invention is
(A) a polyorganosiloxane having an average of 0.2 or more silicon-bonded alkenyl groups in one molecule,
(B) R ₂ SiO _2/2 unit, R ₃ SiO _1/2 unit and SiO _4/2 unit (wherein R is the same or different substituted or unsubstituted monovalent hydrocarbon group, At least three alkenyl groups), and a polyorganosiloxane having an amount of hydroxyl groups bonded to silicon atoms of 50 to 3000 ppm,
(C) A silicone composition for semiconductor encapsulation containing a polyorganohydrogensiloxane having at least two silicon-bonded hydrogen atoms in one molecule, and (D) a platinum-based catalyst,
The blending amount of the component (B) is 1 to 50% by weight with respect to the total amount of the component (A) and the component (B),
The compounding amount of the component (C) is a silicon atom bond of the component (C) with respect to a total of 1 mol of the silicon atom bond alkenyl group of the component (A) and the silicon atom bond alkenyl group of the component (B). The amount of hydrogen atoms is 0.2-5 mol,
The blending amount of the component (D) is a catalytic amount.

  The semiconductor device of the present invention is characterized in that a semiconductor element is sealed with a cured product of the silicone composition for semiconductor sealing.

  According to the above configuration, a silicone composition for semiconductor encapsulation that is excellent in adhesion to a lead frame plated with Au or Ag and is suitable as a sealant for semiconductor elements, and a highly reliable semiconductor using the same An apparatus can be provided.

  Hereinafter, the silicone composition for semiconductor encapsulation of the present invention will be described.

[(A) component]
Component (A) is a base polymer, and in order to sufficiently cure the resulting composition, an average of 0.2 or more, preferably an average of 0.5 or more, more preferably an average of 2 or more per molecule. It has an alkenyl group bonded to a silicon atom. The molecular structure may be linear, cyclic, or branched, but is preferably linear from the viewpoint of the mechanical strength of the cured product, etc., or a single type or a combination of two or more types.

  Examples of the alkenyl group bonded to the silicon atom include a vinyl group, an allyl group, a butenyl group, a petenyl group, and a hexenyl group, and a vinyl group is preferable. The alkenyl group may be bonded to the silicon atom at the end of the molecular chain, or may be bonded to the silicon atom in the middle of the molecular chain, or may be bonded to both. From the viewpoint of the physical properties of these, it is preferable that they are bonded to at least silicon atoms at the molecular chain terminals, particularly to silicon atoms at both molecular chain terminals.

  Examples of organic groups bonded to silicon atoms other than alkenyl groups include alkyl groups such as methyl, ethyl and propyl groups, cycloalkyl groups such as cyclopentyl and cyclohexyl groups, phenyl groups, tolyl groups and xylyl groups. Having 1 to 12 carbon atoms, preferably 1 to 8 carbon atoms, such as aryl groups or halogenated hydrocarbon groups in which these hydrogen atoms are partially substituted with chlorine atoms, fluorine atoms, etc. Preferably an alkyl group and an aryl group, more preferably a methyl group and a phenyl group.

  (A) The viscosity in 25 degreeC of a component is 5-100,000 mPa * s, Preferably, it is 100-50,000 mPa * s. If it is less than 5 mPa · s, the mechanical strength after curing tends to decrease. On the other hand, when it exceeds 100,000 mPa · s, the workability of the resulting composition tends to deteriorate.

[Component (B)]
The component (B) is a component that imparts the characteristics of the present composition, which significantly improves the adhesion with a lead frame plated with Au or Ag, and includes R ₂ SiO _2/2 units, R ₃ SiO _{1 / 2} units, a polyorganosiloxane having a three-dimensional network structure composed of SiO _4/2 units.

Each unit is an average unit formula:
(R ₂ SiO _2/2 ) _a (R ₃ SiO _1/2 ) _b (SiO _4/2 ) _c
It is preferable that it is comprised from the ratio represented by these.

  In the formula, a, b and c are each a positive number, (a + b) / c is a number of 0.01 to 10, preferably 0.1 to 1, and a / b is 0.001 to 1, Preferably it is a number of 0.01-1.

  R is the same or different substituted or unsubstituted monovalent hydrocarbon group, and at least three in one molecule are alkenyl groups. R is, for example, an alkyl group such as methyl, ethyl, propyl, isopropyl, butyl, isobutyl, tert-butyl, hexyl, cyclohexyl, octyl; vinyl, allyl, butenyl. , An alkenyl group such as a petenyl group and a hexenyl group; an aryl group such as a phenyl group and a tolyl group; an aralkyl group such as a benzyl group and a phenylethyl group; and a part or all of hydrogen atoms of these groups are fluorine, Those substituted with a halogen atom such as chlorine and bromine and a cyano group, such as a chloromethyl group, a bromoethyl group, a trifluoropropyl group, a cyanoethyl group, and the like are preferable, and an alkyl group and an alkenyl group are preferable, and more preferable. A methyl group and a vinyl group.

As the component (B), for example, an average unit formula:
[CH ₂ = CH (CH ₃ ) SiO _2/2 ] _p [(CH ₃ ) ₃ SiO _1/2 ] _q [SiO _4/2 ] _r
(Wherein p, q and r are each a positive number, (p + q) / r is a number of 0.01 to 10 and p / q is a number of 0.001 to 1). Polyorganosiloxane represented, average unit formula:
[CH ₂ = CH (CH ₃ ) SiO _2/2 ] _s [(C ₆ H ₅ ) (CH ₃ ) ₂ SiO _1/2 ] _t [SiO _4/2 ] _u
(In the formula, s, t, and u are positive numbers, and (s + t) / u is a number from 0.01 to 10,
And s / t is a number of 0.001-1. ), Polyorganosiloxane, average unit formula:
[(CH ₃ ) ₂ SiO _2/2 ] _x [CH ₂ ═CH (CH ₃ ) ₂ SiO _1/2 ] _y [SiO _4/2 ] _z
(Wherein x, y and z are each a positive number, (x + y) / z is a number from 0.01 to 10,
And x / y is a number of 0.001-1. ) And the like are exemplified.

  Furthermore, the component (B) has a hydroxyl group bonded to a silicon atom. The hydroxyl group may be bonded to the silicon atom at the end of the molecular chain, or may be bonded to the silicon atom in the middle of the molecular chain, or may be bonded to both. It is preferably bonded to a silicon atom. The amount of hydroxyl group is 50 to 3000 ppm, preferably 100 to 2000 ppm. If it is less than 50 ppm, sufficient effect of improving adhesiveness cannot be obtained. On the other hand, when it exceeds 3000 ppm, the curing rate decreases or the cured product tends to foam. By introducing such a specific small amount of hydroxyl groups, the adhesiveness of the resulting composition can be remarkably improved. Examples of the method for quantifying the amount of hydroxyl groups include the KF method (Karl Fischer method).

(B) As a method for producing _components, the organosiloxane having a _{SiO 4/2 unit,} and an organosiloxane having R _{3 SiO 1/2 units,} R _{2 SiO 2/2} units (R is the same as the )), (R ₂ SiO _2/2 units + R ₃ SiO _1/2 units) / SiO _4/2 units = 0.01 to 10, R ₂ SiO _2/2 units / R ₃ SiO _{1 /} Examples include a method in which _two units are combined at a molar ratio of 0.001 to 1, and this is cohydrolyzed in the presence of an acid, an alkali, or the like.

  (B) Content of a component is 1 to 50 weight% with respect to the total amount (100 weight%) of (A) component and (B) component, Preferably it is 5 to 40 weight%. If it is less than 1% by weight, sufficient adhesion to a lead frame plated with Au or Ag cannot be obtained. On the other hand, when it exceeds 50 weight%, the workability | operativity of the composition obtained will fall.

  (B) A component can be used individually by 1 type or in combination of 2 or more types.

[Component (C)]
Component (C) is a crosslinking agent and has at least 2, preferably 3 or more hydrogen atoms (Si-H groups) bonded to silicon atoms in one molecule. The Si—H group may be bonded to the silicon atom at the end of the molecular chain, may be bonded to the silicon atom in the middle of the molecular chain, or may be bonded to both.

As the component (C), an average composition formula:
R ² _d H _e SiO _{[4- (d + e)] / 2}
What is shown by is used.

In the formula, R ² is a substituted or unsubstituted monovalent hydrocarbon group excluding an aliphatic unsaturated hydrocarbon group. R ² includes, for example, an alkyl group such as a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a tert-butyl group, a hexyl group, a cyclohexyl group, and an octyl group; Aryl groups such as; aralkyl groups such as benzyl and phenylethyl groups; and those in which some or all of the hydrogen atoms in these groups are substituted with halogen atoms such as fluorine, chlorine, bromine or cyano groups, A chloromethyl group, a bromoethyl group, a trifluoropropyl group, a cyanoethyl group and the like can be mentioned. Among these, an alkyl group having 1 to 4 carbon atoms is preferable, and a methyl group is particularly preferable from the viewpoint of ease of synthesis and cost.

  d and e are positive numbers satisfying 0.5 ≦ d ≦ 2, 0 <e ≦ 2, and 0.5 <d + e ≦ 3, respectively, preferably 0.6 ≦ d ≦ 1.9, 0 .01 ≦ e ≦ 1.0 and 0.6 ≦ d + e ≦ 2.8.

  The molecular structure of the component (C) may be linear, branched, cyclic or three-dimensional network, and may be used alone or in combination of two or more.

  (C) The viscosity in 25 degreeC of a component is 1-1000 mPa * s, Preferably it is 10-500 mPa * s.

  The blending amount of the component (C) is such that the Si—H group of the component (C) is 0. 1 mol with respect to 1 mol in total of the silicon atom-bonded alkenyl group of the component (A) and the silicon atom-bonded alkenyl group of the component (B). The amount is 2 to 5 mol, and preferably 0.5 to 3 mol. If the amount is less than 0.2 mol, sufficient crosslinking cannot be obtained. On the other hand, when it exceeds 5 mol, unreacted Si-H bonds remain, and the physical properties after curing tend to be unstable.

[(D) component]
(D) component is a component which accelerates | stimulates hardening of this composition.

  As the component (D), a known catalyst used for hydrosilylation reaction can be used. For example, platinum black, secondary platinum chloride, chloroplatinic acid, reaction product of chloroplatinic acid and monohydric alcohol, complex of chloroplatinic acid and olefins and vinyl siloxane, platinum-based catalyst such as platinum bisacetoacetate, palladium-based Examples thereof include platinum group metal catalysts such as catalysts and rhodium catalysts.

  (D) The compounding quantity of a component should just be a quantity required for hardening, and can be suitably adjusted according to a desired hardening rate. Usually, it is in the range of 0.1 to 1000 ppm, preferably in the range of 0.5 to 500 ppm in terms of platinum element, based on the total amount of the composition obtained.

  The silicone composition for encapsulating a semiconductor of the present invention comprises the above components (A) to (D) as basic components, and if necessary, a reaction inhibitor for adjusting the curing rate as other optional components, Colorants, flame retardants, heat resistance improvers, plasticizers, reinforcing silica, adhesion promoters and the like may be added as long as the object of the present invention is not impaired.

  As a manufacturing method of the silicone composition for semiconductor sealing of this invention, the method etc. which mix (A)-(D) component and other arbitrary components with mixers, such as a planetary mixer, a kneader, and a Shinagawa mixer, etc. are mentioned, for example. . The resulting composition is preferably in a liquid state, and preferably has a viscosity at 25 ° C. of 100 to 1,000,000 mPa · s, particularly 500 to 100,000 mPa · s.

  The method for curing the obtained composition is not limited, and curing proceeds at room temperature or by heating, but heating is preferable for rapid curing. The temperature for heating is selected from the range of 50 to 200 ° C. The cured product is in the form of a rubber, gel or flexible resin and has excellent adhesiveness and high transparency, and requires high transparency such as LEDs (light emitting diodes) and photocouplers. It is suitable as a sealant and protective agent for semiconductor elements and semiconductor elements that require high voltage.

  Next, the semiconductor device of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view showing an example of a semiconductor device according to the present invention, and shows an example of a photocoupler.

  In the semiconductor device 1, the semiconductor elements 2 and 3 are sealed with the cured product 4 of the above-described semiconductor sealing silicone composition.

  For example, the semiconductor device 1 is manufactured as follows.

  First, a Ga—Al—As compound semiconductor element 2 is bonded to a lead frame 5 plated with Au or Ag with a known conductive paste, and then another lead frame and the semiconductor element 2 are bonded to the bonding wire 6. Bond with.

  Next, the semiconductor element 3 for light reception is joined to the lead frame 8 plated with Au or Ag at a position facing the semiconductor element 2 with a conductive paste, and another lead frame and the semiconductor element 3 are bonded to the bonding wire. Bond with 6.

  The space between these semiconductor elements 2 and 3 is filled with the above-described silicone composition for semiconductor encapsulation, and then cured by heating at, for example, 150 ° C. for 1 hour to form a cured product 4 of the semiconductor composition for semiconductor encapsulation. Subsequently, the outer periphery of the cured product 4 is sealed with a mold resin 7 such as an epoxy resin.

  Since the semiconductor device 1 obtained in this way uses the cured product 4 of the silicone composition for semiconductor encapsulation whose adhesion to Au or Ag is remarkably improved, even if the package is exposed to high temperature, the lead Peeling does not occur at the interface between the frames 5 and 8 and the cured product 4 and is excellent in reliability.

  Examples The present invention will be described in detail by examples, but the present invention is not limited to the examples. The silicone compositions for semiconductor encapsulation obtained in Examples and Comparative Examples were evaluated as follows, and the results are shown in Table 1. The characteristics shown in Table 1 are values measured at 25 ° C.

[Cohesive failure rate]
Measurement was performed according to JIS K 6249. That is, as shown in FIG. 2, each one end of a rectangular substrate 11, 12 having a width of 25 mm obtained by silver-plating a copper plate is bonded to each other with a silicone composition 13 for semiconductor encapsulation having a thickness of 1 mm sandwiched therebetween ( Adhesive area: 25 mm × 10 mm = 2.5 cm ² ), and heat-cured at 150 ° C. for 1 hour to prepare a test piece. Each test piece is pulled in the direction of the arrow in the drawing with a tensile tester (manufactured by Shimadzu Corporation, Autograph) at a pulling speed of 10 mm / min, and the cohesive failure rate of the surfaces of the silver-plated substrates 11 and 12 is determined. It was measured.

[Reliability of semiconductor devices]
The photocoupler shown in FIG. 1 was produced as follows. That is, a Ga—Al—As compound-based semiconductor element 2 is bonded to a lead frame 5 plated with Au with a conductive paste, and then another lead frame and the semiconductor element 2 are bonded with a bonding wire 6. . Similarly, the light receiving semiconductor element 3 is bonded to the lead frame 8 plated with Au using a conductive paste at a position facing the semiconductor element 2, and then another lead frame and the semiconductor element are joined. 3 was bonded with a bonding wire 6. The space between these semiconductor elements 2 and 3 is filled with a silicone composition for semiconductor encapsulation, and then heated at 150 ° C. for 1 hour to form a cured product 4. Subsequently, the periphery of the cured product 4 is molded resin 7 (transparent Sealed with epoxy resin.
In this manner, ten photocouplers were produced. These photocouplers were subjected to 1000 cycles of a thermal cycle test (1 cycle: −40 ° C. × 30 minutes + 150 ° C. × 30 minutes). Separation of the interface between the cured product 4 and the lead frames 5 and 8 after the thermal cycle test was observed using a 100 × microscope (KH-7000, manufactured by KEYENCE). The peeled photocoupler was regarded as defective, and the number of defects was examined.

[Synthesis Example 1]
A four-necked flask equipped with a stirrer, a thermometer and a reflux condenser was charged with 132 g of vinylmethyldimethoxysilane, 624 g of trimethylmethoxysilane, 1216 g of tetratrimethoxysilane, and 900 g of toluene, and after mixing uniformly, 6N NaOH A mixture of 1.5 g and 370 g of water was added dropwise and stirred at the reflux temperature of methanol for 1 hour. Thereafter, 1100 g of toluene was added, the reflux tube was switched to a distillation system, and then heated to 100 ° C. to distill off methanol. Next, the mixture was cooled to room temperature, 1 g of acetic acid was added and mixed, and impurities were filtered out, and a toluene solution of polyorganosiloxane was obtained.
To the polyorganosiloxane (B-1) thus obtained, the vinyl group-containing polyorganosiloxane (A) was added and desolubilized to obtain a mixture with the component (A).
This synthesis results in the formula:
[(CH ₃ ) ₃ SiO _1/2 ] ₆ [(CH ₂ ═CH) (CH ₃ ) SiO _2/2 ] [SiO _4/2 ] ₈
And a polyorganosiloxane (B-1) containing a Si—OH group was obtained.
The obtained mixture and the component (A) used were obtained after dehydration treatment by measuring the amount of each hydroxyl group by the KF method and subtracting the amount of hydroxyl group of the component (A) from the amount of hydroxyl group of the mixture. The amount of hydroxyl groups of polyorganosiloxane (B-1) was measured. The amount of this hydroxyl group was 200 ppm.
In addition, the measurement of the amount of hydroxyl groups is a Karl Fischer method automatic moisture measuring device (KF-06 type, manufactured by Mitsubishi Kasei Co., Ltd.) using a KF reagent (Karl Fischer reagent SS, manufactured by API Corporation). The amount of water was measured using a dehydrating solvent (CM 50 ml and ML 10 ml, manufactured by API Corporation), and the hydroxyl amount was calculated from the amount of water.

[Synthesis Example 2]
Similar to Synthesis Example 1 except that 132 g of vinylmethyldimethoxysilane, 520 g of trimethylmethoxysilane, 1216 g of tetratrimethoxysilane, and 380 g of water were used, the formula: [(CH ₃ ) ₃ SiO _1/2 ] ₅ [(CH ₂ = CH) (CH ₃ ) SiO _2/2 ] [SiO _4/2 ] ₈
And a polyorganosiloxane containing Si—OH groups was obtained. This polyorganosiloxane (B-2) had a hydroxyl group content of 1500 ppm as measured by the KF method.

[Synthesis Example 3]
Except for using 520 g of trimethylmethoxysilane, 1216 g of tetratrimethoxysilane, and 370 g of water, the formula:
[(CH ₃ ) ₃ SiO _1/2 ] ₆ [SiO _4/2 ] ₈
A polyorganosiloxane containing an Si—OH group not containing an alkenyl group was obtained. This polyorganosiloxane (B-3) had a hydroxyl group content of 1800 ppm as measured by the KF method.

[Example 1]
(A-1) 90 parts by weight of polydimethylorganosiloxane having a viscosity of 10000 mPa · s at 25 ° C. and having both ends of the molecular chain blocked with vinyldimethylsiloxy groups, (B-1) the poly obtained in Synthesis Example 1 10 parts by weight of organosiloxane, (C) 3.3 parts by weight of polyorganohydrogensiloxane having 50 mol% hydrogen groups in the side chain, (D) vinylsiloxane complex of chloroplatinic acid (10 ppm as platinum element) A silicone composition for semiconductor encapsulation was obtained.
The properties of this composition were measured and the results are shown in Table 1.

[Example 2]
(A-2) Polydimethylorganosiloxane 70 parts by weight having a viscosity at 25 ° C. of 3000 mPa · s and having both molecular chain ends blocked with vinyldimethylsiloxy groups, (B-2) 30 parts by weight of organosiloxane, (C) 4.0 parts by weight of polyorganohydrogensiloxane having 50 mol% hydrogen groups in the side chain, (D) vinyl siloxane complex of chloroplatinic acid (10 ppm as platinum element) A silicone composition for semiconductor encapsulation was obtained.
The properties of this composition were measured and the results are shown in Table 1.

[Comparative Example 1]
(A-1) 100 parts by weight of polydimethylorganosiloxane having a viscosity at 25 ° C. of 10,000 mPa · s, both ends of the molecular chain blocked with vinyldimethylsiloxy groups, and (C) a poly having 50 mol% hydrogen groups in the side chain 1.1 parts by weight of organohydrogensiloxane and (D) vinyl siloxane complex of chloroplatinic acid (10 ppm as platinum element) were mixed to obtain a silicone composition for semiconductor encapsulation.
The properties of this composition were measured and the results are shown in Table 1.

[Comparative Example 2]
(A-2) Polydimethylorganosiloxane having a viscosity at 25 ° C. of 3000 mPa · s and having both molecular chain ends blocked with a vinyldimethylsiloxy group, (B-3) 30 parts by weight of organosiloxane, (C) 1.0 part by weight of polyorganohydrogensiloxane having 50 mol% hydrogen groups in the side chain, (D) vinyl siloxane complex of chloroplatinic acid (10 ppm as platinum element), A silicone composition for semiconductor encapsulation was obtained.
The properties of this composition were measured and the results are shown in Table 1.

As is clear from Table 1, as the component (B), a predetermined amount of a hydroxyl group bonded to a silicon atom is introduced, and specific units, that is, R ₂ SiO _2/2 units, R ₃ SiO _1/2 units, and SiO _{4 /} Each Example which mix | blended the polyorganosiloxane comprised from ₂ units (R is as above-mentioned.) Exhibits the outstanding adhesiveness with respect to the board | substrate plated with Ag.

  Therefore, the silicone composition for semiconductor encapsulation of the present invention has remarkably improved adhesion to Ag, and is suitable as a sealant for semiconductor elements, for example, using a lead frame plated with Ag. is there.

FIG. 6 is a cross-sectional view schematically illustrating an example of a configuration of a semiconductor device of the invention. The schematic diagram which shows the test piece and test condition which were used for the measurement of the cohesive failure rate.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Semiconductor device, 2 ... Semiconductor element, 3 ... Light receiving semiconductor element, 4 ... Hardened | cured material of the silicone composition for semiconductor sealing, 5, 8 ... Lead frame, 6 ... Bonding wire, 7 ... Mold resin, 11, 12 ... Substrate, 13 ... Silicone composition for semiconductor encapsulation.

Claims (4)

(A) a polyorganosiloxane having an average of 0.2 or more silicon-bonded alkenyl groups in one molecule;
(B) R ₂ SiO _2/2 unit, R ₃ SiO _1/2 unit and SiO _4/2 unit (wherein R is the same or different substituted or unsubstituted monovalent hydrocarbon group, At least three alkenyl groups), and a polyorganosiloxane having an amount of hydroxyl groups bonded to silicon atoms of 50 to 3000 ppm,
(C) A silicone composition for semiconductor encapsulation containing a polyorganohydrogensiloxane having at least two silicon-bonded hydrogen atoms in one molecule, and (D) a platinum-based catalyst,
The blending amount of the component (B) is 1 to 50% by weight with respect to the total amount of the component (A) and the component (B),
The compounding amount of the component (C) is a silicon atom bond of the component (C) with respect to a total of 1 mol of the silicon atom bond alkenyl group of the component (A) and the silicon atom bond alkenyl group of the component (B). The amount of hydrogen atoms is 0.2-5 mol,
The compounding quantity of the said (D) component is a catalyst amount, The silicone composition for semiconductor sealing characterized by the above-mentioned. The component (B) is an average unit formula:
(R ₂ SiO _2/2 ) _a (R ₃ SiO _1/2 ) _b (SiO _4/2 ) _c
(In the formula, R is the same as above, a, b and c are positive numbers, (a + b) / c is a number of 0.01 to 10, and a / b is 0.001 to 0.001. It is the number of 1.) The silicone composition for semiconductor sealing of Claim 1 characterized by the above-mentioned. The component (B) is an average unit formula:
[(CH ₂ ═CH) (CH ₃ ) SiO _2/2 ] _p [(CH ₃ ) ₃ SiO _1/2 ] _q [SiO _4/2 ] _r
(Wherein p, q and r are each a positive number, (p + q) / r is a number of 0.01 to 10 and p / q is a number of 0.001 to 1). It is represented, The silicone composition for semiconductor sealing of Claim 1 or 2 characterized by the above-mentioned.   A semiconductor device, wherein a semiconductor element is sealed with a cured product of the silicone composition for semiconductor sealing according to any one of claims 1 to 3.

Images