JP2008127517A - Silicone composition for sealing semiconductor and semiconductor device - Google Patents

Silicone composition for sealing semiconductor and semiconductor device Download PDF

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JP2008127517A
JP2008127517A JP2006316700A JP2006316700A JP2008127517A JP 2008127517 A JP2008127517 A JP 2008127517A JP 2006316700 A JP2006316700 A JP 2006316700A JP 2006316700 A JP2006316700 A JP 2006316700A JP 2008127517 A JP2008127517 A JP 2008127517A
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semiconductor
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silicone composition
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JP5259947B2 (en
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Koji Taiko
弘二 大皷
Nobuo Hirai
信男 平井
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Momentive Performance Materials Japan LLC
Momentive Performance Materials Inc
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Momentive Performance Materials Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a silicone composition for sealing semiconductor excellent in adhesion to lead frames subjected to plating with Au or Ag, suitable for sealing a semiconductor element and to provide a highly reliable semiconductor device using the same. <P>SOLUTION: The composition comprises (A) a polyorganosiloxane having average ≥0.2 of alkenyl group bonded with a silicon atom in a molecule, (B) a polyorganosiloxane composed of an R<SB>2</SB>SiO<SB>2/2</SB>unit, an R<SB>3</SB>SiO<SB>1/2</SB>unit and an SiO<SB>4/2</SB>unit (in the formula R is the same or different (substituted)monovalent hydrocarbon group, and in the molecule, at least three are alkenyl groups.), and the amount of hydroxy groups bonding to a silicon atom is 50-3,000 ppm, (C) a polyorganohydrogensiloxane having at least two hydrogen atoms each bonding to a silicon atom in a molecules, and (D) a platinum-based catalyst. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、半導体装置の構成部品であるAuまたはAgでメッキが施されたリードフレームとの接着性に優れ、半導体素子の封止剤として好適な半導体封止用シリコーン組成物及びそれを用いた半導体装置に関する。   The present invention is excellent in adhesion to a lead frame plated with Au or Ag, which is a component of a semiconductor device, and uses a silicone composition for semiconductor encapsulation suitable as a semiconductor element sealant and the same. The present invention relates to a semiconductor device.

従来から、発光ダイオード、フォトカプラ等の半導体素子の封止剤としては、透明性や耐熱性が良好なため、付加反応硬化型のシリコーン組成物が使用されている(例えば、特許文献1参照)。   Conventionally, as a sealant for semiconductor elements such as light emitting diodes and photocouplers, an addition reaction curable silicone composition has been used because of its good transparency and heat resistance (see, for example, Patent Document 1). .

しかしながら、半導体装置の構成部品であるリードフレームは、AuまたはAgでメッキを施されたものが一般的であるが、従来の付加反応硬化型のシリコーン組成物では、AuまたはAgへの接着性が弱く、パッケージが高温にさらされると、リードフレームと該シリコーン組成物の硬化物との界面で剥離が発生しやすく、信頼性が低下するという問題があった。
特開2004−143361号公報
However, lead frames, which are components of semiconductor devices, are generally plated with Au or Ag, but conventional addition reaction curable silicone compositions have adhesion to Au or Ag. When the package is exposed to a high temperature, peeling is likely to occur at the interface between the lead frame and the cured product of the silicone composition, resulting in a decrease in reliability.
JP 2004-143361 A

本発明の目的は、このような課題に対処するためになされたもので、AuまたはAgでメッキが施されたリードフレームとの接着性に優れ、半導体素子の封止剤として好適な半導体封止用シリコーン組成物およびそれを用いた高信頼性の半導体装置を提供することにある。   An object of the present invention is to address such problems, and is excellent in adhesiveness with a lead frame plated with Au or Ag, and is suitable as a semiconductor element sealant. An object of the present invention is to provide a silicone composition for use and a highly reliable semiconductor device using the same.

本発明者らは、上記目的を達成するために鋭意検討した結果、水酸基を所定量導入し、特定の単位から構成される三次元網目状構造のポリオルガノシロキサンを配合することにより、AuまたはAgでメッキが施されたリードフレームとの接着性を著しく改善した半導体封止用シリコーン組成物およびそれを用いた半導体装置が得られることを見出し、本発明をなすに至った。   As a result of intensive investigations to achieve the above object, the present inventors have introduced a predetermined amount of hydroxyl groups, and blended with a polyorganosiloxane having a three-dimensional network structure composed of specific units, whereby Au or Ag. The present inventors have found that a silicone composition for semiconductor encapsulation and a semiconductor device using the same can be obtained with markedly improved adhesion to a lead frame plated with the above.

すなわち、本発明の半導体封止用シリコーン組成物は、
(A)1分子中に平均0.2個以上のケイ素原子結合アルケニル基を有するポリオルガノシロキサン、
(B)RSiO2/2単位、RSiO1/2単位およびSiO4/2単位(式中、Rは同じかまたは異なる置換もしくは非置換の1価炭化水素基であり、1分子中少なくとも3個がアルケニル基である。)から構成され、ケイ素原子に結合する水酸基量が50〜3000ppmであるポリオルガノシロキサン、
(C)1分子中に少なくとも2個のケイ素原子結合水素原子を有するポリオルガノハイドロジェンシロキサン、及び
(D)白金系触媒を含有する半導体封止用シリコーン組成物であって、
前記(B)成分の配合量が、前記(A)成分と(B)成分との合計量に対して1〜50重量%であり、
前記(C)成分の配合量が、前記(A)成分のケイ素原子結合アルケニル基と前記(B)成分のケイ素原子結合アルケニル基との合計1モルに対して、(C)成分のケイ素原子結合水素原子が0.2〜5モルとなる量であり、
前記(D)成分の配合量が、触媒量であることを特徴とする。
That is, the silicone composition for semiconductor encapsulation of the present invention is
(A) a polyorganosiloxane having an average of 0.2 or more silicon-bonded alkenyl groups in one molecule,
(B) R 2 SiO 2/2 unit, R 3 SiO 1/2 unit and SiO 4/2 unit (wherein R is the same or different substituted or unsubstituted monovalent hydrocarbon group, At least three alkenyl groups), and a polyorganosiloxane having an amount of hydroxyl groups bonded to silicon atoms of 50 to 3000 ppm,
(C) A silicone composition for semiconductor encapsulation containing a polyorganohydrogensiloxane having at least two silicon-bonded hydrogen atoms in one molecule, and (D) a platinum-based catalyst,
The blending amount of the component (B) is 1 to 50% by weight with respect to the total amount of the component (A) and the component (B),
The compounding amount of the component (C) is a silicon atom bond of the component (C) with respect to a total of 1 mol of the silicon atom bond alkenyl group of the component (A) and the silicon atom bond alkenyl group of the component (B). The amount of hydrogen atoms is 0.2-5 mol,
The blending amount of the component (D) is a catalytic amount.

また、本発明の半導体装置は、上記半導体封止用シリコーン組成物の硬化物によって半導体素子が封止されていることを特徴とする。   The semiconductor device of the present invention is characterized in that a semiconductor element is sealed with a cured product of the silicone composition for semiconductor sealing.

上記構成によれば、AuまたはAgでメッキが施されたリードフレームとの接着性に優れ、半導体素子の封止剤として好適な半導体封止用シリコーン組成物およびそれを用いた高信頼性の半導体装置を提供することができる。   According to the above configuration, a silicone composition for semiconductor encapsulation that is excellent in adhesion to a lead frame plated with Au or Ag and is suitable as a sealant for semiconductor elements, and a highly reliable semiconductor using the same An apparatus can be provided.

以下、本発明の半導体封止用シリコーン組成物について説明する。   Hereinafter, the silicone composition for semiconductor encapsulation of the present invention will be described.

[(A)成分]
(A)成分はベースポリマーであり、得られる組成物を十分に硬化させる上で、1分子中に平均0.2個以上、好ましくは平均0.5個以上、より好ましくは平均2個以上のケイ素原子に結合したアルケニル基を有する。その分子構造は、直鎖状、環状、分岐鎖状のいずれでもよいが、硬化物の機械的強度等の点から、直鎖状が好ましく、1種単独または2種以上を組み合わせてもよい。
[(A) component]
Component (A) is a base polymer, and in order to sufficiently cure the resulting composition, an average of 0.2 or more, preferably an average of 0.5 or more, more preferably an average of 2 or more per molecule. It has an alkenyl group bonded to a silicon atom. The molecular structure may be linear, cyclic, or branched, but is preferably linear from the viewpoint of the mechanical strength of the cured product, etc., or a single type or a combination of two or more types.

ケイ素原子に結合したアルケニル基としては、例えばビニル基、アリル基、ブテニル基、ペテニル基、ヘキセニル基などが例示され、好ましくはビニル基である。アルケニル基は、分子鎖末端のケイ素原子に結合していても、分子鎖途中のケイ素原子に結合していても、両者に結合していてもよいが、得られる組成物の硬化速度、硬化後の物性の点から、少なくとも分子鎖末端のケイ素原子、特に、分子鎖両末端のケイ素原子に結合していることが好ましい。   Examples of the alkenyl group bonded to the silicon atom include a vinyl group, an allyl group, a butenyl group, a petenyl group, and a hexenyl group, and a vinyl group is preferable. The alkenyl group may be bonded to the silicon atom at the end of the molecular chain, or may be bonded to the silicon atom in the middle of the molecular chain, or may be bonded to both. From the viewpoint of the physical properties of these, it is preferable that they are bonded to at least silicon atoms at the molecular chain terminals, particularly to silicon atoms at both molecular chain terminals.

また、アルケニル基以外のケイ素原子に結合した有機基としては、例えばメチル基、エチル基、プロピル基等のアルキル基、シクロペンチル基、シクロヘキシル基等のシクロアルキル基、フェニル基、トリル基、キシリル基等のアリール基あるいはこれらの水素原子が部分的に塩素原子、フッ素原子などで置換されたハロゲン化炭化水素基などの、炭素原子数1〜12個、好ましくは炭素原子数1〜8個のものが挙げられ、好ましくはアルキル基、アリール基であり、より好ましくはメチル基、フェニル基である。   Examples of organic groups bonded to silicon atoms other than alkenyl groups include alkyl groups such as methyl, ethyl and propyl groups, cycloalkyl groups such as cyclopentyl and cyclohexyl groups, phenyl groups, tolyl groups and xylyl groups. Having 1 to 12 carbon atoms, preferably 1 to 8 carbon atoms, such as aryl groups or halogenated hydrocarbon groups in which these hydrogen atoms are partially substituted with chlorine atoms, fluorine atoms, etc. Preferably an alkyl group and an aryl group, more preferably a methyl group and a phenyl group.

(A)成分の25℃における粘度は、5〜100,000mPa・sであり、好ましくは、100〜50,000mPa・sである。5mPa・s未満であると、硬化後の機械的強度が低下しやすい。一方、100,000mPa・sを超えると、得られる組成物の作業性が低下しやすい。   (A) The viscosity in 25 degreeC of a component is 5-100,000 mPa * s, Preferably, it is 100-50,000 mPa * s. If it is less than 5 mPa · s, the mechanical strength after curing tends to decrease. On the other hand, when it exceeds 100,000 mPa · s, the workability of the resulting composition tends to deteriorate.

[(B)成分]
(B)成分は、AuまたはAgでメッキが施されたリードフレームとの接着性を著しく改善する、本組成物の特徴を付与する成分であり、RSiO2/2単位、RSiO1/2単位、SiO4/2単位から構成される三次元網目状構造のポリオルガノシロキサンである。
[Component (B)]
The component (B) is a component that imparts the characteristics of the present composition, which significantly improves the adhesion with a lead frame plated with Au or Ag, and includes R 2 SiO 2/2 units, R 3 SiO 1 / 2 units, a polyorganosiloxane having a three-dimensional network structure composed of SiO 4/2 units.

上記各単位は、平均単位式:
(RSiO2/2(RSiO1/2(SiO4/2
で表されるような割合から構成されることが好ましい。
Each unit is an average unit formula:
(R 2 SiO 2/2 ) a (R 3 SiO 1/2 ) b (SiO 4/2 ) c
It is preferable that it is comprised from the ratio represented by these.

式中、a、b、cは、それぞれ正数であり、(a+b)/cは0.01〜10、好ましくは0.1〜1の数であり、a/bは0.001〜1、好ましくは0.01〜1の数である。   In the formula, a, b and c are each a positive number, (a + b) / c is a number of 0.01 to 10, preferably 0.1 to 1, and a / b is 0.001 to 1, Preferably it is a number of 0.01-1.

Rは、同じかまたは異なる置換もしくは非置換の1価炭化水素基であり、1分子中少なくとも3個はアルケニル基である。Rとしては、例えばメチル基、エチル基、プロピル基、イソプロピル基、ブチル基、イソブチル基、tert−ブチル基、ヘキシル基、シクロヘキシル基、オクチル基のようなアルキル基;ビニル基、アリル基、ブテニル基、ペテニル基、ヘキセニル基のようなアルケニル基;フェニル基、トリル基のようなアリール基;ベンジル基、フェニルエチル基のようなアラルキル基;およびこれらの基の水素原子の一部または全部がフッ素、塩素、臭素などのハロゲン原子やシアノ基で置換されているもの、例えばクロロメチル基、ブロモエチル基、トリフルオロプロピル基、シアノエチル基などが挙げられ、好ましくはアルキル基、アルケニル基であり、より好ましくはメチル基、ビニル基である。   R is the same or different substituted or unsubstituted monovalent hydrocarbon group, and at least three in one molecule are alkenyl groups. R is, for example, an alkyl group such as methyl, ethyl, propyl, isopropyl, butyl, isobutyl, tert-butyl, hexyl, cyclohexyl, octyl; vinyl, allyl, butenyl. , An alkenyl group such as a petenyl group and a hexenyl group; an aryl group such as a phenyl group and a tolyl group; an aralkyl group such as a benzyl group and a phenylethyl group; and a part or all of hydrogen atoms of these groups are fluorine, Those substituted with a halogen atom such as chlorine and bromine and a cyano group, such as a chloromethyl group, a bromoethyl group, a trifluoropropyl group, a cyanoethyl group, and the like are preferable, and an alkyl group and an alkenyl group are preferable, and more preferable. A methyl group and a vinyl group.

(B)成分としては、例えば、平均単位式:
[CH=CH(CH)SiO2/2][(CHSiO1/2][SiO4/2
(式中、p、q、rはそれぞれ正数であり、(p+q)/rは0.01〜10の数であり、かつ、p/qは0.001〜1の数である。)で表されるポリオルガノシロキサン、平均単位式:
[CH=CH(CH)SiO2/2][(C)(CHSiO1/2][SiO4/2
(式中、s、t、uはそれぞれ正数であり、(s+t)/uは0.01〜10の数であり、
かつ、s/tは0.001〜1の数である。)で表されるポリオルガノシロキサン、平均単位式:
[(CHSiO2/2][CH=CH(CHSiO1/2][SiO4/2
(式中、x、y、zはそれぞれ正数であり、(x+y)/zは0.01〜10の数であり、
かつ、x/yは0.001〜1の数である。)で表されるポリオルガノシロキサン等が挙げられる。
As the component (B), for example, an average unit formula:
[CH 2 = CH (CH 3 ) SiO 2/2 ] p [(CH 3 ) 3 SiO 1/2 ] q [SiO 4/2 ] r
(Wherein p, q and r are each a positive number, (p + q) / r is a number of 0.01 to 10 and p / q is a number of 0.001 to 1). Polyorganosiloxane represented, average unit formula:
[CH 2 = CH (CH 3 ) SiO 2/2 ] s [(C 6 H 5 ) (CH 3 ) 2 SiO 1/2 ] t [SiO 4/2 ] u
(In the formula, s, t, and u are positive numbers, and (s + t) / u is a number from 0.01 to 10,
And s / t is a number of 0.001-1. ), Polyorganosiloxane, average unit formula:
[(CH 3 ) 2 SiO 2/2 ] x [CH 2 ═CH (CH 3 ) 2 SiO 1/2 ] y [SiO 4/2 ] z
(Wherein x, y and z are each a positive number, (x + y) / z is a number from 0.01 to 10,
And x / y is a number of 0.001-1. ) And the like are exemplified.

さらに、(B)成分は、ケイ素原子に結合した水酸基を有する。水酸基は、分子鎖末端のケイ素原子に結合していても、分子鎖途中のケイ素原子に結合していても、両者に結合していてもよいが、接着性の点から、少なくとも分子鎖末端のケイ素原子に結合していることが好ましい。また、水酸基量は50〜3000ppm、好ましくは100〜2000ppmである。50ppmより少ないと、接着性改善の十分な効果が得られない。一方、3000ppmを超えると、硬化速度が低下したり、硬化物が発泡しやすくなる。このような特定少量の水酸基を導入することによって、得られる組成物の接着性を著しく改善することができる。水酸基量を定量する方法としては、例えばKF法(カールフィッシャー法)等が挙げられる。   Furthermore, the component (B) has a hydroxyl group bonded to a silicon atom. The hydroxyl group may be bonded to the silicon atom at the end of the molecular chain, or may be bonded to the silicon atom in the middle of the molecular chain, or may be bonded to both. It is preferably bonded to a silicon atom. The amount of hydroxyl group is 50 to 3000 ppm, preferably 100 to 2000 ppm. If it is less than 50 ppm, sufficient effect of improving adhesiveness cannot be obtained. On the other hand, when it exceeds 3000 ppm, the curing rate decreases or the cured product tends to foam. By introducing such a specific small amount of hydroxyl groups, the adhesiveness of the resulting composition can be remarkably improved. Examples of the method for quantifying the amount of hydroxyl groups include the KF method (Karl Fischer method).

(B)成分の製造方法としては、SiO4/2単位を有するオルガノシロキサンと、RSiO1/2単位を有するオルガノシロキサンと、RSiO2/2単位(Rは、前記と同じである。)を有するオルガノシロキサンを、(RSiO2/2単位+RSiO1/2単位)/SiO4/2単位=0.01〜10、RSiO2/2単位/RSiO1/2単位=0.001〜1となるモル比で組み合わせ、これを酸、アルカリ等の存在下で共加水分解する方法等が挙げられる。 (B) As a method for producing components, the organosiloxane having a SiO 4/2 unit, and an organosiloxane having R 3 SiO 1/2 units, R 2 SiO 2/2 units (R is the same as the )), (R 2 SiO 2/2 units + R 3 SiO 1/2 units) / SiO 4/2 units = 0.01 to 10, R 2 SiO 2/2 units / R 3 SiO 1 / Examples include a method in which two units are combined at a molar ratio of 0.001 to 1, and this is cohydrolyzed in the presence of an acid, an alkali, or the like.

(B)成分の含有量は、(A)成分と(B)成分との合計量(100重量%)に対し1〜50重量%、好ましくは5〜40重量%である。1重量%未満であると、AuまたはAgでメッキが施されたリードフレームに対して十分な接着性が得られない。一方、50重量%を超えると、得られる組成物の作業性が低下する。   (B) Content of a component is 1 to 50 weight% with respect to the total amount (100 weight%) of (A) component and (B) component, Preferably it is 5 to 40 weight%. If it is less than 1% by weight, sufficient adhesion to a lead frame plated with Au or Ag cannot be obtained. On the other hand, when it exceeds 50 weight%, the workability | operativity of the composition obtained will fall.

(B)成分は、1種単独で、または2種以上を組み合わせて使用することができる。   (B) A component can be used individually by 1 type or in combination of 2 or more types.

[(C)成分]
(C)成分は架橋剤であり、1分子中に少なくとも2個、好ましくは3個以上のケイ素原子に結合した水素原子(Si‐H基)を有する。Si‐H基は、分子鎖末端のケイ素原子に結合していても、分子鎖中間のケイ素原子に結合していても、両者に結合していてもよい。
[Component (C)]
Component (C) is a crosslinking agent and has at least 2, preferably 3 or more hydrogen atoms (Si-H groups) bonded to silicon atoms in one molecule. The Si—H group may be bonded to the silicon atom at the end of the molecular chain, may be bonded to the silicon atom in the middle of the molecular chain, or may be bonded to both.

(C)成分としては、平均組成式:
SiO[4−(d+e)]/2
で示されるものが用いられる。
As the component (C), an average composition formula:
R 2 d H e SiO [4- (d + e)] / 2
What is shown by is used.

式中、Rは、脂肪族不飽和炭化水素基を除く、置換または非置換の1価炭化水素基である。Rとしては、例えば、メチル基、エチル基、プロピル基、イソプロピル基、ブチル基、イソブチル基、tert−ブチル基、ヘキシル基、シクロヘキシル基、オクチル基のようなアルキル基;フェニル基、トリル基のようなアリール基;ベンジル基、フェニルエチル基のようなアラルキル基;およびこれらの基の水素原子の一部または全部がフッ素、塩素、臭素などのハロゲン原子やシアノ基で置換されているもの、例えばクロロメチル基、ブロモエチル基、トリフルオロプロピル基、シアノエチル基などが挙げられる。これらのうちで、炭素原子数1〜4のアルキル基が好ましく、特に、合成のし易さ、コストの点から、メチル基がより好ましい。 In the formula, R 2 is a substituted or unsubstituted monovalent hydrocarbon group excluding an aliphatic unsaturated hydrocarbon group. R 2 includes, for example, an alkyl group such as a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a tert-butyl group, a hexyl group, a cyclohexyl group, and an octyl group; Aryl groups such as; aralkyl groups such as benzyl and phenylethyl groups; and those in which some or all of the hydrogen atoms in these groups are substituted with halogen atoms such as fluorine, chlorine, bromine or cyano groups, A chloromethyl group, a bromoethyl group, a trifluoropropyl group, a cyanoethyl group and the like can be mentioned. Among these, an alkyl group having 1 to 4 carbon atoms is preferable, and a methyl group is particularly preferable from the viewpoint of ease of synthesis and cost.

d、eは、それぞれ、0.5≦d≦2、0<e≦2、0.5<d+e≦3を満足する正数であり、好ましくは、0.6≦d≦1.9、0.01≦e≦1.0、0.6≦d+e≦2.8を満足する正数である。   d and e are positive numbers satisfying 0.5 ≦ d ≦ 2, 0 <e ≦ 2, and 0.5 <d + e ≦ 3, respectively, preferably 0.6 ≦ d ≦ 1.9, 0 .01 ≦ e ≦ 1.0 and 0.6 ≦ d + e ≦ 2.8.

(C)成分の分子構造としては、直鎖状、分岐鎖状、環状あるいは三次元網目状のいずれであってもよく、1種単独または2種以上を組み合わせて使用することもできる。   The molecular structure of the component (C) may be linear, branched, cyclic or three-dimensional network, and may be used alone or in combination of two or more.

(C)成分の25℃における粘度は、1〜1000mPa・sであり、好ましくは10〜500mPa・sである。   (C) The viscosity in 25 degreeC of a component is 1-1000 mPa * s, Preferably it is 10-500 mPa * s.

(C)成分の配合量は、(A)成分のケイ素原子結合アルケニル基と(B)成分のケイ素原子結合アルケニル基の合計1モルに対して、(C)成分のSi−H基が0.2〜5モルとなる量であり、好ましくは0.5〜3モルとなる量である。0.2モル未満では、十分な架橋が得られない。一方、5モルを越えると、未反応のSi−H結合が残存し、硬化後の物性が不安定になりやすい。   The blending amount of the component (C) is such that the Si—H group of the component (C) is 0. 1 mol with respect to 1 mol in total of the silicon atom-bonded alkenyl group of the component (A) and the silicon atom-bonded alkenyl group of the component (B). The amount is 2 to 5 mol, and preferably 0.5 to 3 mol. If the amount is less than 0.2 mol, sufficient crosslinking cannot be obtained. On the other hand, when it exceeds 5 mol, unreacted Si-H bonds remain, and the physical properties after curing tend to be unstable.

[(D)成分]
(D)成分は、本組成物の硬化を促進させる成分である。
[(D) component]
(D) component is a component which accelerates | stimulates hardening of this composition.

(D)成分としては、ヒドロシリル化反応に用いられる周知の触媒を使用することができる。例えば白金黒、塩化第2白金、塩化白金酸、塩化白金酸と一価アルコールとの反応物、塩化白金酸とオレフィン類やビニルシロキサンとの錯体、白金ビスアセトアセテート等の白金系触媒、パラジウム系触媒、ロジウム系触媒などの白金族金属触媒が挙げられる。   As the component (D), a known catalyst used for hydrosilylation reaction can be used. For example, platinum black, secondary platinum chloride, chloroplatinic acid, reaction product of chloroplatinic acid and monohydric alcohol, complex of chloroplatinic acid and olefins and vinyl siloxane, platinum-based catalyst such as platinum bisacetoacetate, palladium-based Examples thereof include platinum group metal catalysts such as catalysts and rhodium catalysts.

(D)成分の配合量は、硬化に必要な量であればよく、所望の硬化速度などに応じて適宜調整することができる。通常、得られる組成物の合計量に対し、白金元素に換算して0.1〜1000ppmの範囲、好ましくは0.5〜500ppmの範囲である。   (D) The compounding quantity of a component should just be a quantity required for hardening, and can be suitably adjusted according to a desired hardening rate. Usually, it is in the range of 0.1 to 1000 ppm, preferably in the range of 0.5 to 500 ppm in terms of platinum element, based on the total amount of the composition obtained.

本発明の半導体封止用シリコーン組成物は、上記(A)〜(D)の各成分を基本成分とし、これらに必要に応じて、その他任意成分として硬化速度を調整するための反応抑制剤、着色剤、難燃性付与剤、耐熱性向上剤、可塑剤、補強性シリカ、接着性付与剤等を本発明の目的を損なわない範囲で添加してもよい。   The silicone composition for encapsulating a semiconductor of the present invention comprises the above components (A) to (D) as basic components, and if necessary, a reaction inhibitor for adjusting the curing rate as other optional components, Colorants, flame retardants, heat resistance improvers, plasticizers, reinforcing silica, adhesion promoters and the like may be added as long as the object of the present invention is not impaired.

本発明の半導体封止用シリコーン組成物の製造方法としては、例えば(A)〜(D)成分及びその他任意成分をプラネタリーミキサー、ニーダー、品川ミキサー等の混合機で混合する方法等が挙げられる。得られる組成物は液状であることが好ましく、25℃における粘度が、100〜1000000mPa・s、特に500〜100000mPa・sであることが好ましい。   As a manufacturing method of the silicone composition for semiconductor sealing of this invention, the method etc. which mix (A)-(D) component and other arbitrary components with mixers, such as a planetary mixer, a kneader, and a Shinagawa mixer, etc. are mentioned, for example. . The resulting composition is preferably in a liquid state, and preferably has a viscosity at 25 ° C. of 100 to 1,000,000 mPa · s, particularly 500 to 100,000 mPa · s.

得られた組成物を硬化させる方法は限定されず、室温もしくは加熱により硬化が進行するが、迅速に硬化させるためには加熱することが好ましい。加熱する場合の温度としては、50〜200℃の範囲から選ばれる。硬化物は、ゴム状、ゲル状あるいは可撓性を有するレジン状で、優れた接着性と高い透明性を備えており、例えばLED(発光ダイオード)、フォトカプラ等の高い透明性を必要とする半導体素子や高電圧を必要とする半導体素子の封止剤、保護剤として好適である。   The method for curing the obtained composition is not limited, and curing proceeds at room temperature or by heating, but heating is preferable for rapid curing. The temperature for heating is selected from the range of 50 to 200 ° C. The cured product is in the form of a rubber, gel or flexible resin and has excellent adhesiveness and high transparency, and requires high transparency such as LEDs (light emitting diodes) and photocouplers. It is suitable as a sealant and protective agent for semiconductor elements and semiconductor elements that require high voltage.

次に、本発明の半導体装置について図面を参照して説明する。図1は、本発明に係る半導体装置の一例を示す断面図であり、フォトカプラの一例を示している。   Next, the semiconductor device of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view showing an example of a semiconductor device according to the present invention, and shows an example of a photocoupler.

半導体装置1は、半導体素子2,3が、上述した半導体封止用シリコーン組成物の硬化物4で封止されている。   In the semiconductor device 1, the semiconductor elements 2 and 3 are sealed with the cured product 4 of the above-described semiconductor sealing silicone composition.

この半導体装置1は、例えば以下のようにして作製される。   For example, the semiconductor device 1 is manufactured as follows.

まず、Ga−Al−As化合物系の半導体素子2をAuまたはAgでメッキが施されたリードフレーム5に周知の導電性ペーストで接合し、次いで、別のリードフレームと半導体素子2をボンディングワイヤ6でボンディングする。   First, a Ga—Al—As compound semiconductor element 2 is bonded to a lead frame 5 plated with Au or Ag with a known conductive paste, and then another lead frame and the semiconductor element 2 are bonded to the bonding wire 6. Bond with.

次に、半導体素子2と対向する位置に、受光用の半導体素子3をAuまたはAgでメッキが施されたリードフレーム8に導電性ペーストで接合し、別のリードフレームと半導体素子3をボンディングワイヤ6でボンディングする。   Next, the semiconductor element 3 for light reception is joined to the lead frame 8 plated with Au or Ag at a position facing the semiconductor element 2 with a conductive paste, and another lead frame and the semiconductor element 3 are bonded to the bonding wire. Bond with 6.

これら半導体素子2,3間を上述した半導体封止用シリコーン組成物で充填した後、例えば150℃で1時間加熱して硬化させ、半導体封止用シリコーン組成物の硬化物4を形成する。続けて、硬化物4の外周をエポキシ樹脂等のモールド樹脂7で封止する。   The space between these semiconductor elements 2 and 3 is filled with the above-described silicone composition for semiconductor encapsulation, and then cured by heating at, for example, 150 ° C. for 1 hour to form a cured product 4 of the semiconductor composition for semiconductor encapsulation. Subsequently, the outer periphery of the cured product 4 is sealed with a mold resin 7 such as an epoxy resin.

このようにして得られる半導体装置1は、AuまたはAgとの接着性が著しく改善された半導体封止用シリコーン組成物の硬化物4を用いているため、パッケージが高温にさらされても、リードフレーム5,8と硬化物4との界面で剥離が生じることがなく、信頼性に優れている。   Since the semiconductor device 1 obtained in this way uses the cured product 4 of the silicone composition for semiconductor encapsulation whose adhesion to Au or Ag is remarkably improved, even if the package is exposed to high temperature, the lead Peeling does not occur at the interface between the frames 5 and 8 and the cured product 4 and is excellent in reliability.

本発明を実施例により詳細に説明するが、本発明は実施例に限定されるものではない。実施例及び比較例で得られた半導体封止用シリコーン組成物は、以下のようにして評価し、結果を表1に示した。表1に示した特性は、25℃において測定した値である。   Examples The present invention will be described in detail by examples, but the present invention is not limited to the examples. The silicone compositions for semiconductor encapsulation obtained in Examples and Comparative Examples were evaluated as follows, and the results are shown in Table 1. The characteristics shown in Table 1 are values measured at 25 ° C.

[凝集破壊率]
JIS K 6249に準じて、測定した。すなわち、図2に示すように、銅板に銀メッキを施した幅25mmの長方形状の基板11,12の各々の片末端を厚さ1mmの半導体封止用シリコーン組成物13を挟む形で張り合わせ(接着面積:25mm×10mm=2.5cm)、150℃で1時間加熱硬化させてテストピースを作製した。このテストピースのそれぞれの端部を図中の矢印方向に、引っ張り試験機(島津製作所製、オートグラフ)で引張速度10mm/分で引っ張り、銀メッキされた基板11,12表面の凝集破壊率を測定した。
[Cohesive failure rate]
Measurement was performed according to JIS K 6249. That is, as shown in FIG. 2, each one end of a rectangular substrate 11, 12 having a width of 25 mm obtained by silver-plating a copper plate is bonded to each other with a silicone composition 13 for semiconductor encapsulation having a thickness of 1 mm sandwiched therebetween ( Adhesive area: 25 mm × 10 mm = 2.5 cm 2 ), and heat-cured at 150 ° C. for 1 hour to prepare a test piece. Each test piece is pulled in the direction of the arrow in the drawing with a tensile tester (manufactured by Shimadzu Corporation, Autograph) at a pulling speed of 10 mm / min, and the cohesive failure rate of the surfaces of the silver-plated substrates 11 and 12 is determined. It was measured.

[半導体装置の信頼性]
図1に示したフォトカプラを次のようにして作製した。すなわち、Ga−Al−As化合物系の半導体素子2をAuでメッキが施されたリードフレーム5に導電性ペーストで接合し、次いで、別のリードフレームと半導体素子2とをボンディングワイヤ6でボンディングした。同様にして、半導体素子2と対向する位置に、受光用の半導体素子3をAuでメッキが施されたリードフレーム8上に導電性ペーストを用いて接合し、次いで、別のリードフレームと半導体素子3をボンディングワイヤ6でボンディングした。これら半導体素子2,3の間を半導体封止用シリコーン組成物で充填した後、150℃で1時間加熱して硬化物4を形成し、続けて、硬化物4の周囲をモールド樹脂7(透明エポキシ樹脂)で封止した。
このようにして10個のフォトカプラを作製した。これらのフォトカプラについて、冷熱サイクル試験(1サイクル:−40℃×30分+150℃×30分)を1000サイクル行った。冷熱サイクル試験後の硬化物4とリードフレーム5,8との界面の剥離を100倍の顕微鏡(KH−7000、KEYENCE社製)を用いて観察した。剥離したフォトカプラを不良とし、不良個数を調べた。
[Reliability of semiconductor devices]
The photocoupler shown in FIG. 1 was produced as follows. That is, a Ga—Al—As compound-based semiconductor element 2 is bonded to a lead frame 5 plated with Au with a conductive paste, and then another lead frame and the semiconductor element 2 are bonded with a bonding wire 6. . Similarly, the light receiving semiconductor element 3 is bonded to the lead frame 8 plated with Au using a conductive paste at a position facing the semiconductor element 2, and then another lead frame and the semiconductor element are joined. 3 was bonded with a bonding wire 6. The space between these semiconductor elements 2 and 3 is filled with a silicone composition for semiconductor encapsulation, and then heated at 150 ° C. for 1 hour to form a cured product 4. Subsequently, the periphery of the cured product 4 is molded resin 7 (transparent Sealed with epoxy resin.
In this manner, ten photocouplers were produced. These photocouplers were subjected to 1000 cycles of a thermal cycle test (1 cycle: −40 ° C. × 30 minutes + 150 ° C. × 30 minutes). Separation of the interface between the cured product 4 and the lead frames 5 and 8 after the thermal cycle test was observed using a 100 × microscope (KH-7000, manufactured by KEYENCE). The peeled photocoupler was regarded as defective, and the number of defects was examined.

[合成例1]
撹拌装置、温度計および還流冷却器を備えた4つ口フラスコに、ビニルメチルジメトキシシラン132g、トリメチルメトキシシラン624g、テトラトリメトキシシラン1216g、トルエン900gを投入し、均一に混合した後、6N−NaOHを1.5gと水370gを混ぜ合わせたものを滴下し、メタノールの還流温度で1時間撹拌した。その後トルエン1100gを加え、還流管を留出系に切り替えた後、100℃まで加熱してメタノールを留去した。次いで、室温まで冷却し、酢酸1gを加えて混合し、不純物をろ過した後、ポリオルガノシロキサンのトルエン溶液を得た。
このようにして得られたポリオルガノシロキサン(B−1)に、(A)成分のビニル基含有ポリオルガノシロキサンを加えて、脱溶を行い(A)成分との混合物を得た。
この合成により、式:
[(CHSiO1/2[(CH=CH)(CH)SiO2/2][SiO4/2
で表され、Si−OH基を含むポリオルガノシロキサン(B−1)を得た。
得られた混合物と、用いた(A)成分は、脱水処理後、KF法により、それぞれの水酸基量を測定し、該混合物の水酸基量から(A)成分の水酸基量を差し引いて、得られたポリオルガノシロキサン(B−1)の水酸基量を測定した。この水酸基量は、200ppmであった。
なお、水酸基量の測定は、カールフィッシャー法自動水分測定装置(KF−06型、三菱化成(株)製)で、KF試薬(カールフィッシャー試薬SS、(株)エーピーアイコーポレーション製)を使用し、脱水溶剤(CM50mlとML10ml、(株)エーピーアイコーポレーション製)を用いて水分量を測定し、この水分量から水酸基量を計算することによって測定を行った。
[Synthesis Example 1]
A four-necked flask equipped with a stirrer, a thermometer and a reflux condenser was charged with 132 g of vinylmethyldimethoxysilane, 624 g of trimethylmethoxysilane, 1216 g of tetratrimethoxysilane, and 900 g of toluene, and after mixing uniformly, 6N NaOH A mixture of 1.5 g and 370 g of water was added dropwise and stirred at the reflux temperature of methanol for 1 hour. Thereafter, 1100 g of toluene was added, the reflux tube was switched to a distillation system, and then heated to 100 ° C. to distill off methanol. Next, the mixture was cooled to room temperature, 1 g of acetic acid was added and mixed, and impurities were filtered out, and a toluene solution of polyorganosiloxane was obtained.
To the polyorganosiloxane (B-1) thus obtained, the vinyl group-containing polyorganosiloxane (A) was added and desolubilized to obtain a mixture with the component (A).
This synthesis results in the formula:
[(CH 3 ) 3 SiO 1/2 ] 6 [(CH 2 ═CH) (CH 3 ) SiO 2/2 ] [SiO 4/2 ] 8
And a polyorganosiloxane (B-1) containing a Si—OH group was obtained.
The obtained mixture and the component (A) used were obtained after dehydration treatment by measuring the amount of each hydroxyl group by the KF method and subtracting the amount of hydroxyl group of the component (A) from the amount of hydroxyl group of the mixture. The amount of hydroxyl groups of polyorganosiloxane (B-1) was measured. The amount of this hydroxyl group was 200 ppm.
In addition, the measurement of the amount of hydroxyl groups is a Karl Fischer method automatic moisture measuring device (KF-06 type, manufactured by Mitsubishi Kasei Co., Ltd.) using a KF reagent (Karl Fischer reagent SS, manufactured by API Corporation). The amount of water was measured using a dehydrating solvent (CM 50 ml and ML 10 ml, manufactured by API Corporation), and the hydroxyl amount was calculated from the amount of water.

[合成例2]
ビニルメチルジメトキシシラン132g、トリメチルメトキシシラン520g、テトラトリメトキシシラン1216g、水380gとした以外は、合成例1と同様にして、式:[(CHSiO1/2[(CH=CH)(CH)SiO2/2][SiO4/2
で表され、Si−OH基を含むポリオルガノシロキサンを得た。このポリオルガノシロキサン(B−2)は、KF法により測定した水酸基量が、1500ppmであった。
[Synthesis Example 2]
Similar to Synthesis Example 1 except that 132 g of vinylmethyldimethoxysilane, 520 g of trimethylmethoxysilane, 1216 g of tetratrimethoxysilane, and 380 g of water were used, the formula: [(CH 3 ) 3 SiO 1/2 ] 5 [(CH 2 = CH) (CH 3 ) SiO 2/2 ] [SiO 4/2 ] 8
And a polyorganosiloxane containing Si—OH groups was obtained. This polyorganosiloxane (B-2) had a hydroxyl group content of 1500 ppm as measured by the KF method.

[合成例3]
トリメチルメトキシシラン520g、テトラトリメトキシシラン1216g、水370gとした以外は、合成例1と同様にして式:
[(CHSiO1/2[SiO4/2
で表され、アルケニル基を含まないSi−OH基を含むポリオルガノシロキサンを得た。このポリオルガノシロキサン(B−3)は、KF法により測定した水酸基量が、1800ppmであった。
[Synthesis Example 3]
Except for using 520 g of trimethylmethoxysilane, 1216 g of tetratrimethoxysilane, and 370 g of water, the formula:
[(CH 3 ) 3 SiO 1/2 ] 6 [SiO 4/2 ] 8
A polyorganosiloxane containing an Si—OH group not containing an alkenyl group was obtained. This polyorganosiloxane (B-3) had a hydroxyl group content of 1800 ppm as measured by the KF method.

[実施例1]
(A‐1)25℃における粘度が10000mPa・sであり、分子鎖両末端がビニルジメチルシロキシ基で封鎖されたポリジメチルオルガノシロキサン90重量部、(B‐1)合成例1で得られたポリオルガノシロキサン10重量部、(C)側鎖に50mol%水素基をもつポリオルガノハイドロジェンシロキサン3.3重量部、(D)塩化白金酸のビニルシロキサン錯体(白金元素として10ppm)を混合して、半導体封止用シリコーン組成物を得た。
この組成物の特性を測定し、結果を表1に示した。
[Example 1]
(A-1) 90 parts by weight of polydimethylorganosiloxane having a viscosity of 10000 mPa · s at 25 ° C. and having both ends of the molecular chain blocked with vinyldimethylsiloxy groups, (B-1) the poly obtained in Synthesis Example 1 10 parts by weight of organosiloxane, (C) 3.3 parts by weight of polyorganohydrogensiloxane having 50 mol% hydrogen groups in the side chain, (D) vinylsiloxane complex of chloroplatinic acid (10 ppm as platinum element) A silicone composition for semiconductor encapsulation was obtained.
The properties of this composition were measured and the results are shown in Table 1.

[実施例2]
(A‐2)25℃における粘度が3000mPa・sであり、分子鎖両末端がビニルジメチルシロキシ基で封鎖されたポリジメチルオルガノシロキサン70重量部、(B‐2)合成例2で得られたポリオルガノシロキサン30重量部、(C)側鎖に50mol%水素基をもつポリオルガノハイドロジェンシロキサン4.0重量部、(D)塩化白金酸のビニルシロキサン錯体(白金元素として10ppm)を混合して、半導体封止用シリコーン組成物を得た。
この組成物の特性を測定し、結果を表1に示した。
[Example 2]
(A-2) Polydimethylorganosiloxane 70 parts by weight having a viscosity at 25 ° C. of 3000 mPa · s and having both molecular chain ends blocked with vinyldimethylsiloxy groups, (B-2) 30 parts by weight of organosiloxane, (C) 4.0 parts by weight of polyorganohydrogensiloxane having 50 mol% hydrogen groups in the side chain, (D) vinyl siloxane complex of chloroplatinic acid (10 ppm as platinum element) A silicone composition for semiconductor encapsulation was obtained.
The properties of this composition were measured and the results are shown in Table 1.

[比較例1]
(A‐1)25℃における粘度が10000mPa・sであり、分子鎖両末端がビニルジメチルシロキシ基で封鎖されたポリジメチルオルガノシロキサン100重量部、(C)側鎖に50mol%水素基をもつポリオルガノハイドロジェンシロキサン1.1重量部、(D)塩化白金酸のビニルシロキサン錯体(白金元素として10ppm)を混合して、半導体封止用シリコーン組成物を得た。
この組成物の特性を測定し、結果を表1に示した。
[Comparative Example 1]
(A-1) 100 parts by weight of polydimethylorganosiloxane having a viscosity at 25 ° C. of 10,000 mPa · s, both ends of the molecular chain blocked with vinyldimethylsiloxy groups, and (C) a poly having 50 mol% hydrogen groups in the side chain 1.1 parts by weight of organohydrogensiloxane and (D) vinyl siloxane complex of chloroplatinic acid (10 ppm as platinum element) were mixed to obtain a silicone composition for semiconductor encapsulation.
The properties of this composition were measured and the results are shown in Table 1.

[比較例2]
(A‐2)25℃における粘度が3000mPa・sであり、分子鎖両末端がビニルジメチルシロキシ基で封鎖されたポリジメチルオルガノシロキサン70重量部、(B‐3)合成例3で得られたポリオルガノシロキサン30重量部、(C)側鎖に50mol%水素基をもつポリオルガノハイドロジェンシロキサン1.0重量部、(D)塩化白金酸のビニルシロキサン錯体(白金元素として10ppm)を混合して、半導体封止用シリコーン組成物を得た。
この組成物の特性を測定し、結果を表1に示した。

Figure 2008127517
[Comparative Example 2]
(A-2) Polydimethylorganosiloxane having a viscosity at 25 ° C. of 3000 mPa · s and having both molecular chain ends blocked with a vinyldimethylsiloxy group, (B-3) 30 parts by weight of organosiloxane, (C) 1.0 part by weight of polyorganohydrogensiloxane having 50 mol% hydrogen groups in the side chain, (D) vinyl siloxane complex of chloroplatinic acid (10 ppm as platinum element), A silicone composition for semiconductor encapsulation was obtained.
The properties of this composition were measured and the results are shown in Table 1.
Figure 2008127517

表1から明らかなように、(B)成分としてケイ素原子に結合した水酸基を所定量導入し、特定の単位、すなわち、RSiO2/2単位、RSiO1/2単位およびSiO4/2単位(Rは上述したとおり。)から構成されるポリオルガノシロキサンを配合した各実施例は、Agメッキされた基板に対して優れた接着性を発揮する。 As is clear from Table 1, as the component (B), a predetermined amount of a hydroxyl group bonded to a silicon atom is introduced, and specific units, that is, R 2 SiO 2/2 units, R 3 SiO 1/2 units, and SiO 4 / Each Example which mix | blended the polyorganosiloxane comprised from 2 units (R is as above-mentioned.) Exhibits the outstanding adhesiveness with respect to the board | substrate plated with Ag.

したがって、本発明の半導体封止用シリコーン組成物は、Agに対する接着性が著しく改善されており、例えばAgでメッキが施されたリードフレームを使用するような、半導体素子の封止剤として好適である。   Therefore, the silicone composition for semiconductor encapsulation of the present invention has remarkably improved adhesion to Ag, and is suitable as a sealant for semiconductor elements, for example, using a lead frame plated with Ag. is there.

本発明の半導体装置の構成の一例を模式的に示す断面図。FIG. 6 is a cross-sectional view schematically illustrating an example of a configuration of a semiconductor device of the invention. 凝集破壊率の測定に用いたテストピースと試験条件を示す略図。The schematic diagram which shows the test piece and test condition which were used for the measurement of the cohesive failure rate.

符号の説明Explanation of symbols

1…半導体装置、2…半導体素子、3…受光用の半導体素子、4…半導体封止用シリコーン組成物の硬化物、5,8…リードフレーム、6…ボンディングワイヤ、7…モールド樹脂、11,12…基板、13…半導体封止用シリコーン組成物。   DESCRIPTION OF SYMBOLS 1 ... Semiconductor device, 2 ... Semiconductor element, 3 ... Light receiving semiconductor element, 4 ... Hardened | cured material of the silicone composition for semiconductor sealing, 5, 8 ... Lead frame, 6 ... Bonding wire, 7 ... Mold resin, 11, 12 ... Substrate, 13 ... Silicone composition for semiconductor encapsulation.

Claims (4)

(A)1分子中に平均0.2個以上のケイ素原子結合アルケニル基を有するポリオルガノシロキサン、
(B)RSiO2/2単位、RSiO1/2単位およびSiO4/2単位(式中、Rは同じかまたは異なる置換もしくは非置換の1価炭化水素基であり、1分子中少なくとも3個がアルケニル基である。)から構成され、ケイ素原子に結合する水酸基量が50〜3000ppmであるポリオルガノシロキサン、
(C)1分子中に少なくとも2個のケイ素原子結合水素原子を有するポリオルガノハイドロジェンシロキサン、及び
(D)白金系触媒を含有する半導体封止用シリコーン組成物であって、
前記(B)成分の配合量が、前記(A)成分と(B)成分との合計量に対して1〜50重量%であり、
前記(C)成分の配合量が、前記(A)成分のケイ素原子結合アルケニル基と前記(B)成分のケイ素原子結合アルケニル基との合計1モルに対して、(C)成分のケイ素原子結合水素原子が0.2〜5モルとなる量であり、
前記(D)成分の配合量が、触媒量であることを特徴とする半導体封止用シリコーン組成物。
(A) a polyorganosiloxane having an average of 0.2 or more silicon-bonded alkenyl groups in one molecule;
(B) R 2 SiO 2/2 unit, R 3 SiO 1/2 unit and SiO 4/2 unit (wherein R is the same or different substituted or unsubstituted monovalent hydrocarbon group, At least three alkenyl groups), and a polyorganosiloxane having an amount of hydroxyl groups bonded to silicon atoms of 50 to 3000 ppm,
(C) A silicone composition for semiconductor encapsulation containing a polyorganohydrogensiloxane having at least two silicon-bonded hydrogen atoms in one molecule, and (D) a platinum-based catalyst,
The blending amount of the component (B) is 1 to 50% by weight with respect to the total amount of the component (A) and the component (B),
The compounding amount of the component (C) is a silicon atom bond of the component (C) with respect to a total of 1 mol of the silicon atom bond alkenyl group of the component (A) and the silicon atom bond alkenyl group of the component (B). The amount of hydrogen atoms is 0.2-5 mol,
The compounding quantity of the said (D) component is a catalyst amount, The silicone composition for semiconductor sealing characterized by the above-mentioned.
前記(B)成分は、平均単位式:
(RSiO2/2(RSiO1/2(SiO4/2
(式中、Rは前記と同じであり、a、b、cはそれぞれ正数であり、(a+b)/cは0.01〜10の数であり、かつ、a/bは0.001〜1の数である。)で表されることを特徴とする請求項1に記載の半導体封止用シリコーン組成物。
The component (B) is an average unit formula:
(R 2 SiO 2/2 ) a (R 3 SiO 1/2 ) b (SiO 4/2 ) c
(In the formula, R is the same as above, a, b and c are positive numbers, (a + b) / c is a number of 0.01 to 10, and a / b is 0.001 to 0.001. It is the number of 1.) The silicone composition for semiconductor sealing of Claim 1 characterized by the above-mentioned.
前記(B)成分は、平均単位式:
[(CH=CH)(CH)SiO2/2][(CHSiO1/2][SiO4/2
(式中、p、q、rはそれぞれ正数であり、(p+q)/rは0.01〜10の数であり、かつ、p/qは0.001〜1の数である。)で表されることを特徴とする請求項1または2に記載の半導体封止用シリコーン組成物。
The component (B) is an average unit formula:
[(CH 2 ═CH) (CH 3 ) SiO 2/2 ] p [(CH 3 ) 3 SiO 1/2 ] q [SiO 4/2 ] r
(Wherein p, q and r are each a positive number, (p + q) / r is a number of 0.01 to 10 and p / q is a number of 0.001 to 1). It is represented, The silicone composition for semiconductor sealing of Claim 1 or 2 characterized by the above-mentioned.
請求項1ないし3のいずれか1項に記載の半導体封止用シリコーン組成物の硬化物によって半導体素子が封止されていることを特徴とする半導体装置。   A semiconductor device, wherein a semiconductor element is sealed with a cured product of the silicone composition for semiconductor sealing according to any one of claims 1 to 3.
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