JP2008118050A - Multi-function thin film electric resistance-capacitor arrangement - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an arrangement of multi-function thin film electric resistance-capacitors by easily manufacturing by utilizing a patterning process of semiconductor manufacturing, constituting and adjusting the thickness of a dielectric layer or a larger thickness of a pattern to easily constitute and produce electric resistance, a capacitor containing a plurality of different electric resistance values and capacitance values, or the combination of them on a single chip, reducing material and production costs, including a lot of passive components at the same time in one substrate, reducing the number of times of Die bond, and saving a sealing work time. <P>SOLUTION: The arrangement multi-function thin film electric resistance-capacitors is used for an optical fiber communicating optical receiver module. By patterning by photo-lithography, a dielectric thin film and a metal layer pattern are formed on the surface of a Silicon Substrate. By the thin film thickness and the pattern, the electric resistance, the capacitor having a plurality of different resistance values or capacitance values, or the combination of them, and circuit connection wiring between them are formed on the single chip. To directly die-bond a Photodiode of the optical fiber communicating optical receiver module to the electric resistance-capacitor arrangement, the chip thickness is adjusted in a polishing process used for the semiconductor manufacturing to adjust a required optical height position. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a multifunction thin film electrical resistance-capacitor array. In particular, a multi-functional thin-film electrical device which is a passive component of a multi-functional thin-film electronic device having a function of forming an electrical resistance, a capacitor and a combination thereof having a number of different electrical resistance values and capacitance values on a single chip, and serving as an optical substrate. According to resistor-capacitor arrangement.

In an optical transceiver module for optical fiber communication or a semiconductor encapsulated device, an electric resistance or a capacitor (SMD, SLC, MLCC) is added depending on the necessity of a chip (IC) and a circuit, and functions such as voltage stabilization or a filter are provided.
As shown in FIGS. 1 and 2 which are side views of a sealing device structure and capacitor parts of a known optical receiver module for optical fiber communication 1 embodiment, the sealing device structure of the optical receiver module 1 for optical fiber communication includes a substrate 11, A photodiode 12, an optical substrate 13, an electrical resistance conversion amplifier (TIA) 14, and a structure having an electrical resistance value and a capacitance value as required by the circuit structure, and an electrical resistance 15 and Two SLC (Single Layer Capacitor) capacitors 16, 16 'constitute a circuit having a voltage stabilization or filter function.
For the circuit connection of each of the above components, a die bond is used, and the photodiode 12 is die bonded onto the optical substrate 13 by silver paste, and the optical substrate is bonded. The optical position of the photodiode 12 is adjusted according to the thickness of the (Optical substrate) 13 to obtain a predetermined height position suitable for the optical receiver. Further, the circuits are connected by wire bonding and fixed on the end face of the substrate 11 to form a TO-can structure sealing. Further, metal layers 162 and 163 are formed on the surface of the dielectric layer 161 as SLC (Single Layer Capacitor) capacitors 16 and 16 ′ in the structure.
In this type of capacitor, a photodiode 12 can be directly connected to the capacitor 12 by die bonding and a circuit can be connected by wire bonding, but the thickness of the dielectric layer can be reduced. Since the difference also directly affects its capacitance value, it cannot be used directly as an optical substrate whose thickness needs to be adjusted for optical position adjustment. Therefore, it is necessary to separately add an optical substrate 13 on the circuit structure and adjust the optical plane, but this is a waste of material cost and work time.

Further, as shown in FIGS. 3, 4, and 5, which are sealing structures, capacitor component side surfaces, and circuit diagrams of another embodiment of the known optical receiver module 1 for optical fiber communication, sealing of the optical receiver module 1 for optical fiber communication The stop structure is composed of a substrate 11, a photodiode 12, an optical substrate 13, an electrical resistance conversion amplifier (TIA) 14, and an electrical resistance value and a capacitance value as required by the circuit structure. The SMD electric resistor 17 and the two SMD capacitors 18 and 18 ′ as the parts are connected to each other to connect a circuit having a voltage stabilizing function or a filter function.
For circuit connection of the above components, the photodiode 12 is die-bonded on the optical substrate 13 by die bonding. However, the SMD electric resistance 17 and the SMD capacitors 18 and 18 'cannot be wire bonded on the surface, and the two electrodes are installed on the same plane. It is necessary to connect electrodes to the sub-substrate 19 by die bonding. As shown in FIGS. 3 and 4, an arbitrary capacitor 18 or 18 ′ in the structure is fixed on the same optical substrate 13 as the photodiode 12 in terms of structure, and the circuit structure and wire bonding. Next, the above components are connected by wire bonding to form a circuit structure (see FIG. 5).
JP 2000-243981 A JP 2006-41234 A

The known structure has the following drawbacks.
That is, in the sealing device structure and circuit structure of the above-described optical fiber communication optical receiver module, a voltage stabilizing circuit or filter that requires a circuit is configured by a large number of electrical resistors, capacitor components, and an optical substrate. A diode (Photodiode) needs to be die-bonded and connected to a circuit, and it takes time and cost because it needs to go through several die bonding and wire bonding and sealing operations. Will also increase. For this reason, the circuit / optical structure and the wiring structure for circuit connection are limited. Especially, the above-mentioned SMD electrical resistance and SMD capacitor have standards, so that the optical receiver module structure for optical fiber communication becomes more complex and smaller. Therefore, the arrangement space for the parts is limited. Furthermore, the photodiode also has an increase in material cost because it is necessary to adjust an appropriate optical position using an optical substrate having a different thickness based on a request from the optical structure. .
The present invention provides a multi-functional thin film electric resistance-capacitor array that solves the above-mentioned problems of the structure.

In order to solve the above problems, the present invention provides the following multifunction thin film electric resistance-capacitor array.
That is, a metal thin layer is formed on a dielectric thin film formed on the surface of a silicon substrate (Silicon Substrate),
Using an photolithography technique, an electric resistance-capacitance array pattern determined by a photo-mask pattern is created, and a plurality of different electric resistance values or electric resistances of different capacitance values and capacitors depending on the thin film thickness and pattern. Form parts, or electrical resistance, capacitor combination and circuit connection structure between them,
In addition, the electrical resistance-capacitance array adjusts the required optical position by arbitrarily adjusting the chip thickness of the silicon substrate using a polishing process used in semiconductor manufacturing, and in an optical receiver module for optical fiber communication. Die bond the photodiode directly without adding an optical substrate.
This is advantageous for optical receiver module for optical fiber communication and its application to circuit and optical structure,
That is,
Prepare silicon substrate (Silicon Substrate)
A dielectric thin film is formed on the surface of the silicon substrate (Silicon Substrate),
A plurality of different electrical resistance values or capacitance values, and electrical resistance and capacitance array patterns of line connection structures are manufactured on the dielectric thin film by performing lithography patterning,
The thickness of the silicon substrate is polished by a polishing process, the thickness of the optical plane is adjusted to a required thickness, or a chip having a required thickness is provided as necessary,
A different position of the silicon substrate (Silicon Substrate), or forming a metal layer after polishing to form an electrode pad,
A multi-functional thin-film electrical resistance-capacitance array is constructed that constitutes electrical resistance with a plurality of different electrical resistance values or capacitance values on a single chip, capacitor components, or a combination of electrical resistance and capacitor, and its circuit pattern connection.
In other words, it consists of a substrate, multi-function thin film electrical resistance-capacitance array, photodiode (Photodiode), electrical resistance conversion amplifier (TIA),
The multifunction thin film electrical resistance-capacitance array includes a plurality of predetermined electrical resistance values, electrical resistances of capacitance values, capacitor components on a single chip, and a die bond on one surface of the substrate. And
The photodiode is die-bonded to the multifunction thin film electrical resistance-capacitance array, and the optical position is adjusted using the thickness of the multifunction thin film electrical resistance-capacitance array.
The electrical resistance conversion amplifier (TIA) is die-bonded to one surface of the substrate,
The above photodiodes, electrical resistance conversion amplifier (TIA), multi-function thin film electrical resistance-capacitance array of electrical resistances, capacitors, and multiple terminals of the substrate are connected to form a circuit structure by wire bonding. This is a multi-function thin film electric resistance-capacitor arrangement.

  As described above, the multi-functional thin film electrical resistance-capacitance array of the present invention and its application to an optical receiver module for optical fiber communication can be easily manufactured using a patterning process of semiconductor manufacturing, and the dielectric layer thickness or above Patterns can be structured and adjusted to easily structure and produce many different electrical resistance values, electrical resistances with capacitance values, capacitors, or a combination of both on a single chip. In addition, the material and the production cost can be kept low, and a large number of passive components can be included in one substrate at the same time, so that the number of die bonds can be reduced and the sealing operation time can be saved. Furthermore, the circuit pattern structure on the photomask (Photo-mask) is used according to the requirements of the circuit, the circuit is connected between the electrical resistance and the capacitor, the number of wire bonds is reduced, and the sealing work Time can be reduced. In addition, the thickness of the silicon substrate is adjusted by a polishing process used for semiconductor polishing to achieve a required optical plane thickness, or a chip having a predetermined thickness is used, or a pattern of an electric resistance-capacitance array After manufacturing, the polishing process is adjusted to the required thickness, thus arbitrarily adjusting the thickness to the required height for the optical position, and affecting the characteristics of the manufactured electrical resistance-capacitance array There is no. In addition, substrate bonding and wire bonding can be performed thereon, which is advantageous for application to optical receiver modules for optical fiber communications and circuits and optical structures of the products.

First, as shown in FIGS. 6 and 7 which are the manufacturing process and side view of the embodiment of the multifunction thin film electrical resistance-capacitance array of the present invention, the manufacturing method of the multifunction thin film electrical resistance-capacitance array 2 of the present invention is as follows. It consists of the following steps.
In step 800, a silicon substrate 21 is prepared.
In step 802, a dielectric thin film 22 is formed on the surface of the silicon substrate 21. The dielectric thin film 22 is silicon oxide or silicon nitride.
In step 803, a metal layer constituting a combination of a plurality of electrical resistances and capacitors and a circuit pattern for connecting them is formed on the dielectric thin film 22 by patterning using a photomask using a lithography manufacturing process of a semiconductor manufacturing process. 221 is formed.
In step 804, the silicon substrate is polished by a polishing process to obtain the required optical plane thickness (height). Of course, a substrate having a necessary thickness can be selected and manufactured according to need, or the pattern of the electric resistance-capacitance array is polished to a necessary thickness by a semiconductor polishing process after the manufacturing.
In step 806, at a different position of the silicon substrate (Silicon Substrate) 21, first, after polishing for adjusting the thickness of the silicon substrate (Silicon Substrate) 21, a metal layer (Gold pad) 26 is formed at the polishing location. The electrode pad is formed. Of course, in other specific embodiments, the electrode pads can be formed by using a die bonding method by direct silver paste coating.
In step 808, the fabrication of the multifunction thin film electrical resistance-capacitance array 2 is completed, and a number of different electrical resistance values or capacitance values, electrical resistance components, capacitor components, or a combination of both are formed on a single chip of the component. To do.

The electric resistance formed on the dielectric thin film 22, the electric resistance value and the capacitance value of the capacitor are determined by the thickness of the dielectric thin film 22 and the pattern formed thereon. That is, different areas, array pattern structures, thin film thicknesses, and dielectrics formed on the silicon substrate 21 of the array metal layer 221 of the electrical resistance-capacitance array pattern determined by the photo-mask pattern. The circuit pattern of the electrical resistances and capacitors having different electrical resistance values or capacitance values, and electrical connections between them is manufactured according to the thickness of the conductive thin film 22.
At the same time, the fabricated multi-functional thin film electrical resistance-capacitance array 2 can perform direct die bonding (Die bonding) and wire bonding (Wire bonding) on the array metal layer 221 of the electrical resistance-capacitance array pattern, The connection surface is regarded as an electrode pad, which is advantageous for application to the optical receiver module 3 for optical fiber communication and its circuit and optical structures.

Next, as shown in FIGS. 8 and 9, which are examples of application of the embodiment of the multifunction thin film electrical resistance-capacitance array of the present invention to sealing and circuit structure of an optical receiver module for optical fiber communication, the optical fiber communication light is shown. The receiver module 3 includes a plurality of terminals 311 on the substrate 31. The multifunction thin film electric resistance-capacitance array 2 of the present invention comprises an electric resistance 23 and capacitors 24, 25 on a single chip, a photodiode 32 on the surface of the substrate 31, and an electric resistance conversion amplifier (TIA). 33 is die-bonded and sealed to correspond to the TO-can structure.
The photodiode 32 is die-bonded directly onto the capacitor 25 of the multi-function thin film electric resistance-capacitance array 2 using silver paste by die bonding. That is, a multi-function thin-film electrical resistance-capacitance array 2 chip is formed by a polishing process used for a semiconductor by using a multi-function thin-film electrical resistance-capacitance array 2 instead of a known optical substrate as a photodiode 32 optical substrate. The thickness can be adjusted arbitrarily. Thus, the photodiode (Photodiode) 32 is adjusted to the required height position of the optical receiver, and the above-mentioned photodiode (Photodiode) 32, electric resistance conversion amplifier (TIA) 33, multifunctional thin film electric resistance is obtained by wire bonding. -Connect each electrical resistor 23 of the capacitance array 2, capacitors 24, 25, and a plurality of terminals 311 of the substrate 31 to form a circuit structure (see FIG. 9).

FIGS. 10 and 11 are diagrams showing a sealing device structure and a circuit structure indicating that another embodiment of the multifunction thin film electric resistance-capacitance array of the present invention is applied to an optical receiver module for optical fiber communication. This embodiment and FIGS. 8 and 9 are almost the same, but the differences are as follows.
That is, a combination of a large number of capacitors 24, 25, and 27 having different capacitance values based on the required circuit structure in the multi-function thin film electric resistance-capacitance array 2 is manufactured. Die bond on the capacitor 25 of the resistor-capacitance array 2. Multifunctional thin-film electrical resistance-capacitance array 2 adjusts the photodiode 32 to the required optical receiver height position, and wire bonding (Photodiode) 32, electrical resistance conversion amplifier (TIA) 33) Connect each capacitor 24, 25, 27 of the multifunction thin film electrical resistance-capacitance array 2 and a plurality of terminals 311 of the substrate 31 to form a circuit structure (see FIG. 11).

It is a sealing structure instruction | indication of the optical receiver module Example of a well-known optical fiber communication. It is a structure side view of the capacitor component Example applied to the well-known optical receiver module of optical fiber communication. It is a sealing structure instruction | indication figure of the optical receiver module Example of a known another kind of optical fiber communication. It is a structure side view of another kind of capacitor component Example applied to the optical receiver module of a well-known optical fiber communication. It is a circuit structure figure of the optical receiver module Example of another known optical fiber communication. It is a manufacturing method flowchart of this invention Example. It is a structure side view of this invention Example. It is a sealing structure instruction | indication which applies this invention Example to the optical receiver module of optical fiber communication. It is a circuit structure figure which applies an embodiment of the present invention to an optical receiver module of optical fiber communication. It is a sealing structure instruction | indication which applies the Example of another kind of this invention to the optical receiver module of optical fiber communication. FIG. 4 is a circuit structure diagram in which another embodiment of the present invention is applied to an optical receiver module for optical fiber communication.

Explanation of symbols

1Optical receiver module for optical fiber communication
11 Board
12 photodiode
13, 19 Optical substrate
14 Electrical resistance conversion amplifier
15, 17 Electric resistance
16, 16 ', 18, 18' capacitors
161 Dielectric layer
162, 163 metal layers
2 Multifunctional thin film electrical resistance-capacitance array
3 Optical receiver module for optical fiber communication
21 Silicon substrate
221 array metal layer
22 Dielectric thin film
23 Electrical resistance
24, 25, 27 capacitors
26 Metal layer
31 substrates
32 photodiode
33 Electrical resistance conversion amplifier
800 ~ 808 steps

Claims (13)

Multi-functional thin-film electrical resistance-capacitance array for use in circuit voltage stabilization or filter function control of optical receiver modules for optical fiber communications, including optical substrate, photodiode and electrical resistance conversion amplifier (TIA) A manufacturing method comprising:
a) Prepare a silicon substrate,
b) A dielectric thin film is formed on the surface of the silicon substrate (Silicon Substrate),
c) A plurality of different electrical resistance values or capacitance values and metal layer patterns constituting circuit connection wiring are formed on the dielectric thin film by patterning by lithography,
d) completing a multi-functional thin film electrical resistance-capacitance array consisting of electrical resistances with different resistance values on a single chip, capacitance arrays with different capacitance values, or a combination of both;
A method of manufacturing a multi-function thin film electrical resistance-capacitor array characterized by: The manufacturing method further includes:
After fabricating the metal layer of the above-mentioned electrical resistance-capacitance array pattern, the photodiode of the optical receiver module for optical fiber communication is die-bonded directly on the substrate on the optical plane having a predetermined thickness by the polishing process. The method of claim 1, wherein the necessary optical position is adjusted thereby. The manufacturing method further includes:
2. The method of manufacturing a multi-function thin film electric resistance-capacitor array according to claim 1, wherein metal layers are formed at different positions on the silicon substrate to form electrode pads. The manufacturing method further includes:
2. The multifunctional thin film electric resistance according to claim 1, wherein the thickness of the silicon substrate (Silicon Substrate) is adjusted by polishing process, and a metal layer is formed at the polishing position to form an electrode pad. Manufacturing method of capacitor array. The manufacturing method further includes:
2. The method of manufacturing a multifunction thin film electric resistance-capacitor array according to claim 1, wherein electrode pads are formed of silver paste at different positions on the silicon substrate. The manufacturing method further includes:
A plurality of electric resistances and different resistance values and capacitance values of capacitors formed on a silicon substrate (Silicon Substrate) are determined according to a thickness of a dielectric thin film and a metal layer pattern formed thereon. 2. A method for producing a multifunction thin film electrical resistance-capacitor array according to 1. The manufacturing method further includes:
2. The method of manufacturing a multi-function thin film electric resistance-capacitor array according to claim 1, wherein circuit connections between a plurality of capacitors and electric resistances are formed on a single substrate chip by patterning by photolithography. Multi-functional thin-film electrical resistance-capacitance array for use in circuit voltage stabilization or filter function control of optical receiver modules for optical fiber communications, including optical substrate, photodiode and electrical resistance conversion amplifier (TIA) A manufacturing method comprising:
a) Prepare a silicon substrate,
b) A dielectric thin film is formed on the surface of the silicon substrate (Silicon Substrate),
c) A plurality of different electrical resistance values or capacitance values and metal layer patterns constituting circuit connection wiring are formed on the dielectric thin film by patterning by lithography,
d) In the polishing process, the thickness of the silicon substrate is adjusted by polishing to a thickness required as an optical plane,
e) completing a multi-functional thin film electrical resistance-capacitance array consisting of electrical resistance with different resistance values on a single chip, capacitance array with different capacitance values, or a combination of both,
The method for producing a multi-function thin film electrical resistance-capacitor array according to claim 1. The manufacturing method further includes:
2. The method of manufacturing a multi-function thin film electric resistance-capacitor array according to claim 1, wherein a substrate chip having a thickness corresponding to a required thickness of an optical plane is selected as the silicon substrate. A multi-function thin-film electrical resistance-capacitance array used for circuit voltage stabilization or filter function control of an optical receiver module for optical fiber communication, which includes a silicon substrate, a photodiode, and an electrical resistance conversion amplifier (TIA). ,
Consists of silicon substrate, dielectric thin film and metal layer,
The silicon substrate (Silicon Substrate) is an optical substrate (Optical substrate) in which a photodiode is mounted on the substrate by die bonding,
The dielectric thin film and the metal layer are formed on one side surface of the silicon substrate (Silicon Substrate), and a plurality of different electrical resistance values and capacitance values, capacitors, or a combination of both are configured. Multi-functional thin film electrical resistance-capacitor array.   11. The multi-function thin film electric resistance-capacitor array according to claim 10, wherein the silicon substrate is formed as an electrode pad by forming a metal layer at different positions.   The plurality of different electric resistance values on the dielectric thin film, the electric resistance of the capacitance value, and the capacitor are configured according to a plurality of different areas on the thin film, an array pattern and a thin film thickness. 10. Multifunctional thin film electrical resistance-capacitor array according to 10.   11. The multi-function thin film electric resistance according to claim 10, wherein a circuit pattern is further formed on the dielectric thin film, and a plurality of different electric resistance values, electric resistances of capacitance values, and capacitors are connected thereon. -Capacitor array.

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