JP2008116284A - Contact probe, and method for manufacturing the same - Google Patents

Contact probe, and method for manufacturing the same Download PDF

Info

Publication number
JP2008116284A
JP2008116284A JP2006298852A JP2006298852A JP2008116284A JP 2008116284 A JP2008116284 A JP 2008116284A JP 2006298852 A JP2006298852 A JP 2006298852A JP 2006298852 A JP2006298852 A JP 2006298852A JP 2008116284 A JP2008116284 A JP 2008116284A
Authority
JP
Japan
Prior art keywords
contact
pin
insulating film
pin body
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006298852A
Other languages
Japanese (ja)
Other versions
JP4783265B2 (en
Inventor
Takeshi Kaneko
健 金子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP2006298852A priority Critical patent/JP4783265B2/en
Publication of JP2008116284A publication Critical patent/JP2008116284A/en
Application granted granted Critical
Publication of JP4783265B2 publication Critical patent/JP4783265B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Measuring Leads Or Probes (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a contact probe which has adequate strength and can respond to a measurement of a micro-sized object to be tested. <P>SOLUTION: Metallic pin bodies 31 are formed on both surfaces of an insulating film 2F by conducting an electrolytic deposition process, and then an area polymerizing with the pin bodies 31 in the insulating film 2F is separated from other areas along with the pin bodies 31, thereby forming contact pins 3 on both sides of a substrate 2. Then, a portion corresponding to head sections 3a of the contact pins 3 is removed therefrom at the distal end 2a of the substrate 2. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、四端子測定に使用されるコンタクトプローブ、及び当該コンタクトプローブの製造方法に関するものである。   The present invention relates to a contact probe used for four-terminal measurement and a method for manufacturing the contact probe.

回路基板上に搭載されるICチップ等の実装部品は、リードを回路パターンに半田付けして接続固定するのが通常であり、接続不良の有無を判定する測定方法として四端子測定が採用されている。   Mounting parts such as IC chips mounted on a circuit board are usually connected and fixed by soldering leads to a circuit pattern, and four-terminal measurement is adopted as a measurement method for determining the presence or absence of connection failure. Yes.

四端子測定は、ICチップ等の被検査物に対して電流を流すための2本の電流用コンタクトピンと、電流を流した際に生じる電圧降下の状態を測定するための2本の電圧測定用コンタクトピンとを用いて行うものであり、電流用コンタクトピンから電流を流し、その電流と被検査物自身の抵抗で決まる電圧降下分を測定し、当該測定値が、予め設定されている基準範囲値の範囲内にあれば接続良好、範囲外にあれば接続不良と判別するものである。   The four-terminal measurement is for measuring two voltage contact pins for measuring the state of a voltage drop that occurs when a current is passed, and two current contact pins for passing a current to an inspected object such as an IC chip. This is performed using a contact pin, a current is passed from the current contact pin, a voltage drop determined by the current and the resistance of the object to be inspected is measured, and the measured value is a preset reference range value. If it is within the range, it is determined that the connection is good, and if it is outside the range, it is determined that the connection is poor.

そして、このような四端子測定に使用されるコンタクトプローブとしては、例えば、棒状の電圧測定用コンタクトピンと、当該電圧測定用コンタクトピンの周囲を絶縁体を介して囲繞する円筒状の電流用コンタクトピンと、電流用コンタクトピンを進退方向に摺動可能に保持するスリーブと、電流用コンタクトピンとスリーブとの間に設けられ且つ電流用コンタクトピンを先端方向へ付勢するスプリングとを備えた同軸型のものが知られている(例えば特許文献1参照)。
特開平9−138250号公報
Examples of contact probes used for such four-terminal measurement include a rod-shaped voltage measurement contact pin and a cylindrical current contact pin surrounding the voltage measurement contact pin with an insulator. Coaxial type provided with a sleeve for slidably holding the current contact pin in the forward and backward direction, and a spring provided between the current contact pin and the sleeve and biasing the current contact pin in the distal direction Is known (see, for example, Patent Document 1).
JP 9-138250 A

しかしながら、従来のコンタクトプローブは、上述したようにスリーブやスプリングが必須であるため、構造が複雑であり、コストの増大を招来するのみならず、コンタクトプローブ全体の小径化にも限界があるため、半導体技術における超高密度化の進展に伴って更なる極小化が進んでいるICチップ等の被検査物に対応できない場合も生じ得る。また、従来のコンタクトプローブは、電流用コンタクトピンと、電圧測定用コンタクトピンとを絶縁体を介在して相互に組み付けたものであるため、このような組付作業もプローブ全体の小型化に伴ってより緻密なものとなり、高度の組付精度が要求されるという製造上の問題も有する。   However, since the conventional contact probe requires a sleeve and a spring as described above, the structure is complicated and not only causes an increase in cost, but also has a limit in reducing the diameter of the entire contact probe. There may be a case where it is not possible to cope with an inspected object such as an IC chip that is further miniaturized with the progress of ultra-high density in semiconductor technology. In addition, since the conventional contact probe is configured by assembling the current contact pin and the voltage measurement contact pin with an insulator interposed therebetween, such assembling work is more and more accompanied by downsizing of the entire probe. It has a manufacturing problem that it becomes dense and requires a high degree of assembly accuracy.

一方、コンタクトピンとして、直径80μm〜200μmの例えばタングステン製の細針を適用し、一の被検査物に対して、電流用コンタクトピンとして機能する細針と、電圧測定用コンタクトピンとして機能する細針とを少なくとも接触可能にする態様も考えられているが、被検査物の極小化に対応できるように各細針を小径化した場合には各細針の強度が低下するため、このような極めて小径の細針をそれぞれ独立してソケット等の保持具に安定した状態で起立姿勢に保持させておくことは困難であり、その結果、これら各細針を被検査物に的確に接触させることができないおそれもあり、実用性に欠けるという不具合が生じる。   On the other hand, a fine needle made of, for example, tungsten having a diameter of 80 μm to 200 μm is applied as the contact pin, and a fine needle that functions as a current contact pin and a fine pin that functions as a voltage measurement contact pin for one object to be inspected. Although an aspect that enables at least contact with the needle is also considered, the strength of each fine needle is reduced when the diameter of each fine needle is reduced so as to cope with the miniaturization of the inspection object. It is difficult to hold very small diameter fine needles in a standing position in a stable manner on a holder such as a socket independently. As a result, these fine needles must be brought into precise contact with the object to be inspected. May not be able to be performed, resulting in a problem of lack of practicality.

本発明は、このような課題に着目してなされたものであって、主たる目的は、適度な強度を有し且つ極小の被検査物の測定にも対応できるコンタクトプローブ、及びこのようなコンタクトプローブの製造方法を提供することにある。   The present invention has been made paying attention to such a problem, and a main purpose thereof is a contact probe having an appropriate strength and capable of measuring a very small object to be inspected, and such a contact probe. It is in providing the manufacturing method of.

すなわち、本発明のコンタクトプローブは、四端子測定に使用されるものであって、基板と、当該基板の両面に設けた一対のコンタクトピンとを具備してなり、前記基板が、絶縁体の両面にそれぞれ電極層を積層した絶縁フィルムを前記コンタクトピンの巾寸法に対応させて切断したものであり、前記各コンタクトピンが、前記各電極層のうち当該コンタクトピンの巾寸法に相当する領域に電解析出させた金属からなるピン本体を少なくとも備えたものであり、前記絶縁フィルムの両面に前記ピン本体を形成した状態で前記絶縁フィルムのうちこれらピン本体に重合する領域を他の領域からピン本体と共に抜き且つコンタクトピンの先端部に対応する基板の先端部を除去したものであることを特徴とする。   That is, the contact probe of the present invention is used for four-terminal measurement, and includes a substrate and a pair of contact pins provided on both surfaces of the substrate, and the substrate is disposed on both surfaces of the insulator. The insulating film in which each electrode layer is laminated is cut in accordance with the width dimension of the contact pin, and each contact pin is subjected to an electric analysis in a region corresponding to the width dimension of the contact pin in each electrode layer. A pin body made of a metal that has been taken out is provided, and in the state where the pin body is formed on both surfaces of the insulating film, a region that overlaps with the pin body of the insulating film is combined with the pin body from other regions. The substrate is removed and the tip of the substrate corresponding to the tip of the contact pin is removed.

このようなものであれば、電解析出によって基板の両面にピン本体を積層する態様であるため、従来のような各部品を相互に組み付けるという緻密な作業を要することなく容易且つ的確に積層状のコンタクトプローブを成形することができ、しかも、ピン本体を構成する金属等の電解析出材の析出量を調節することによってコンタクトプローブ全体の厚み寸法(又は径寸法)を可及的に小さくすることが可能となり、一方のコンタクトピンを電流用コンタクトピンとして機能させるとともに、他方のコンタクトピンを電圧測定用ピンとして機能させることによってサイズが極めて小さい被検査物の測定にも好適に対応することができる。さらに、ピン本体が金属製であるため、これら各ピン本体によって基板を挟んだコンタクトプローブ全体の適度な剛性を確保することができ、このようなコンタクトプローブを適宜の保持具に安定した状態で起立姿勢に保持させることができる。加えて、コンタクトピンの先端部に対応する基板の先端部を除去しているため、各コンタクトピンを被検査物に的確に接触させることが可能となり、良好な導電性を確保し、実用性に優れたものになる。   If this is the case, the pin main body is laminated on both surfaces of the substrate by electrolytic deposition, so that it is easy and accurate to laminate without requiring the precise work of assembling the parts together as in the past. In addition, the thickness dimension (or diameter dimension) of the entire contact probe can be made as small as possible by adjusting the amount of electrodeposited material such as metal constituting the pin body. It is possible to make one of the contact pins function as a current contact pin, and the other contact pin functions as a voltage measurement pin, so that it can suitably cope with the measurement of an inspected object having a very small size. it can. Furthermore, since the pin main body is made of metal, it is possible to secure an appropriate rigidity of the entire contact probe sandwiching the substrate by each of the pin main bodies. It can be held in a posture. In addition, since the tip of the substrate corresponding to the tip of the contact pin is removed, each contact pin can be brought into precise contact with the object to be inspected, ensuring good conductivity and being practical. It will be excellent.

特に、前記ピン本体が前記各電極層に電解析出させたタングステン合金から形成したものであるため、このようなピン本体を対にして有するコンタクトプローブの構造体としての十分な強度及び弾性を確保することができる。   In particular, since the pin body is formed from a tungsten alloy electrolytically deposited on each electrode layer, sufficient strength and elasticity are secured as a structure of a contact probe having such a pin body as a pair. can do.

導電性及び耐酸化性の更なる向上を図るには、前記各コンタクトピンを、前記ピン本体の外面にメッキ層を備えたものとすればよい。   In order to further improve conductivity and oxidation resistance, the contact pins may be provided with a plating layer on the outer surface of the pin body.

また、本発明のコンタクトプローブの製造方法は、絶縁体の両面にそれぞれ電極層を積層してなる絶縁フィルムの両面にそれぞれ塗布したレジストにマスクを通して放射光を照射することにより、前記絶縁フィルムの両面に少なくとも前記コンタクトピンの巾寸法に相当する巾寸法を有するレジスト除去部を所定ピッチで複数形成するリソグラフィ工程と、当該リソグラフィ工程により形成された前記各レジスト除去部に露出する前記電極層にそれぞれ金属を電解析出してピン本体を形成する電解析出工程と、前記ピン本体及び前記絶縁フィルムのうちこれらピン本体に重合する領域を、レジスト残余部及び前記絶縁フィルムのうちこれらピン本体に重合しない領域から抜く抜き工程と、前記コンタクトピンの先端部に対応する前記基板の先端部を除去する除去工程とを経ることにより、前記絶縁フィルムをコンタクトピンの巾寸法に対応させて切断した基板と、当該基板の両面に設けられ少なくとも前記ピン本体を有する一対のコンタクトピンとを具備したコンタクトプローブを製造することを特徴とする。   The contact probe manufacturing method of the present invention also includes a method of irradiating the resist coated on both surfaces of the insulating film formed by laminating the electrode layers on both surfaces of the insulator with radiated light through a mask. A lithography process for forming a plurality of resist removal portions having a width corresponding to at least the width of the contact pins at a predetermined pitch, and a metal for each of the electrode layers exposed in the resist removal portions formed by the lithography process. Electrodeposition step of electrolytically depositing a pin to form a pin body, and a region of the pin body and the insulating film that overlaps with the pin body, a region of the resist remaining portion and the insulating film that does not overlap with the pin body A step of removing from the tip of the substrate corresponding to the tip of the contact pin A substrate obtained by cutting the insulating film according to the width dimension of the contact pin, and a pair of contact pins provided on both sides of the substrate and having at least the pin body. A contact probe is manufactured.

このような製造方法であれば、従来の高度な組付精度を要する態様と比較して、高精度でありながら大量生産も可能であり、極小化が進む被検査物のサイズを考慮した上で電解析出量等を調節することによってコンタクトプローブの各寸法も容易に変更することが可能であり、汎用性に富むものとなる。   With such a manufacturing method, mass production is possible while being highly accurate compared to the conventional mode requiring high assembly accuracy, and in consideration of the size of the object to be inspected which is miniaturized. By adjusting the amount of electrolytic deposition and the like, the dimensions of the contact probe can be easily changed, and the versatility is enhanced.

具体的な実施態様としては、前記電解析出工程が、前記電極層にそれぞれタングステン合金を電解析出してピン本体を形成するものである態様が挙げられる。   As a specific embodiment, there is an embodiment in which the electrolytic deposition step forms a pin body by electrolytic deposition of a tungsten alloy on the electrode layer.

さらに、前記ピン本体の外面にメッキ加工を施すメッキ工程を経るようにしてもよい。   Furthermore, you may make it pass through the plating process which plates the outer surface of the said pin main body.

以上説明したように本発明によれば、従来のような各部品を相互に組み付けるという高度な組付精度が要求されず、容易且つ的確に積層状のコンタクトプローブを成形することができる。また、ピン本体を構成する金属等の電解析出材の析出量を調節することによってコンタクトプローブ全体の厚み寸法や巾寸法を可及的に小さくすることが可能であり、極小の被検査物Wの測定にも好適に対応することができる。加えて、金属製のピン本体によってコンタクトプローブ全体の適度な剛性を確保することができるとともに、各コンタクトピン3を基板2に優先して被検査物Wに確実に接触させるようにして良好な導電性を確保し、より正確な測定を行うことができる。   As described above, according to the present invention, it is possible to form a laminated contact probe easily and accurately without requiring high assembling accuracy of assembling each component as in the prior art. In addition, the thickness and width of the entire contact probe can be made as small as possible by adjusting the amount of electrolytically deposited material such as metal constituting the pin body. It can respond suitably also to the measurement of. In addition, the metal pin main body can ensure an appropriate rigidity of the entire contact probe, and the contact pins 3 are preferably brought into contact with the inspection object W in preference to the substrate 2 so as to have good conductivity. This ensures a more accurate measurement.

以下、本発明の一実施形態を、図面を参照して説明する。   Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

本実施形態に係るコンタクトプローブ1は、四端子測定に使用されるものであり、図1に示すように、単一の基板2と、この基板2の両面に設けた一対のコンタクトピン3とを具備したものである。   A contact probe 1 according to this embodiment is used for four-terminal measurement. As shown in FIG. 1, a single substrate 2 and a pair of contact pins 3 provided on both surfaces of the substrate 2 are provided. It is equipped.

基板2は、絶縁体21の両面にそれぞれ電極層22を積層した絶縁フィルム2F(図2参照)をコンタクトピン3の巾寸法に対応させて切断したものである。絶縁体21としては、フレキシブル性を有し且つ耐衝撃性に優れたものが好適であり、本実施形態では例えば厚さ40μm〜60μmのテフロン(登録商標)系の樹脂を適用している。一方、電極層22は、電極を形成する薄膜状のものであればよく、本実施形態では厚さ10μm〜18μmの銅箔を適用している。   The substrate 2 is obtained by cutting an insulating film 2 </ b> F (see FIG. 2) in which electrode layers 22 are laminated on both surfaces of an insulator 21 in accordance with the width dimension of the contact pin 3. As the insulator 21, one having flexibility and excellent impact resistance is suitable. In this embodiment, for example, a Teflon (registered trademark) resin having a thickness of 40 μm to 60 μm is applied. On the other hand, the electrode layer 22 only needs to be in the form of a thin film that forms an electrode, and in the present embodiment, a copper foil having a thickness of 10 μm to 18 μm is applied.

各コンタクトピン3は、絶縁フィルム2Fの各電極層22のうち当該コンタクトピン3の巾寸法に相当する領域に電解析出させた金属からなるピン本体31と、ピン本体31の外面にメッキしたメッキ層32とを備えたものである。ピン本体31は、高硬度、高靭性及び高導電性を有する電解析出材料からなり、本実施形態では、このような性質を有する電解析出材料として、タングステン合金(例えばNi―W合金又はFe―W合金)を適用している。一方、メッキ層32は高導電性及び十分な耐酸化性を有するものが好適であり、本実施形態では金メッキ層にしている。   Each contact pin 3 includes a pin body 31 made of metal electrolytically deposited in a region corresponding to the width dimension of the contact pin 3 in each electrode layer 22 of the insulating film 2F, and plating plated on the outer surface of the pin body 31. The layer 32 is provided. The pin body 31 is made of an electrodeposited material having high hardness, high toughness, and high conductivity. In this embodiment, as the electrodeposited material having such properties, a tungsten alloy (for example, a Ni—W alloy or Fe) is used. -W alloy) is applied. On the other hand, the plating layer 32 preferably has high conductivity and sufficient oxidation resistance, and is a gold plating layer in this embodiment.

このような構成をなすコンタクトプローブ1の製造方法について図3〜図9を参照しながら説明する。   A method of manufacturing the contact probe 1 having such a configuration will be described with reference to FIGS.

本実施形態に係るコンタクトプローブ1は、リソグラフィ工程、電解析出工程、抜き工程、メッキ工程、及び除去工程を経て製造される。   The contact probe 1 according to this embodiment is manufactured through a lithography process, an electrolytic deposition process, a drawing process, a plating process, and a removal process.

リソグラフィ工程は、図3〜図5に示すように、絶縁体21の両面にそれぞれ電極層22を積層した絶縁フィルム2Fの両面にそれぞれレジストRを塗布し、このレジストRにマスクMを通して放射光を照射することにより、絶縁フィルム2Fの両面に、巾寸法、長さ寸法、及び厚み寸法がそれぞれコンタクトピン3の巾寸法(例えば100μm)、長さ寸法(例えば20mm)、及び厚み寸法に対応するレジスト除去部R1を所定ピッチで複数形成する工程である。絶縁フィルム2Fに塗布するレジストRの厚み寸法を、成形される各コンタクトピン3の厚み寸法(例えば25μm)と略同一又は若干高く設定している。また、本実施形態に適用するマスクMは、図3及び図4に示すように、コンタクトピン3の巾寸法及び長さ寸法にそれぞれ対応する寸法の露光用孔M1を所定ピッチで形成したものであり、このようなマスクMを通してレジストRに放射光を照射することによって、放射光に露光された部分、つまり前記露光用孔M1に対応する領域のレジストRは分子鎖が切れ、特定の現像液に選択的に溶解し、その結果、コンタクトピン3の外形状に相当するレジスト除去部R1が所定ピッチで複数形成される(図5参照)。なお、各レジスト除去部R1には電極層22が露出している。   In the lithography process, as shown in FIGS. 3 to 5, resist R is applied to both surfaces of the insulating film 2 </ b> F in which the electrode layers 22 are laminated on both surfaces of the insulator 21. By irradiating, the resist whose width dimension, length dimension, and thickness dimension correspond to the width dimension (for example, 100 μm), the length dimension (for example, 20 mm), and the thickness dimension of the contact pin 3 respectively on both surfaces of the insulating film 2F. This is a step of forming a plurality of removal portions R1 at a predetermined pitch. The thickness dimension of the resist R applied to the insulating film 2F is set to be approximately the same as or slightly higher than the thickness dimension (for example, 25 μm) of each contact pin 3 to be molded. The mask M applied to the present embodiment is one in which exposure holes M1 having dimensions corresponding to the width dimension and length dimension of the contact pin 3 are formed at a predetermined pitch, as shown in FIGS. Yes, by irradiating the resist R with radiation light through such a mask M, the resist R in the portion exposed to the radiation light, that is, the region corresponding to the exposure hole M1, breaks the molecular chain, and a specific developer. As a result, a plurality of resist removal portions R1 corresponding to the outer shape of the contact pins 3 are formed at a predetermined pitch (see FIG. 5). The electrode layer 22 is exposed at each resist removal portion R1.

電解析出工程は、図6に示すように、リソグラフィ工程により形成された各レジスト除去部R1に露出する電極層22にそれぞれ金属(本実施形態ではタングステン合金)を電解析出してピン本体31を形成する工程である。本実施形態では、電解析出するタングステン合金の厚み寸法を25μmに設定している。なお、図6では電解析出したタングステン合金をパターンを付して示している。   In the electrolytic deposition process, as shown in FIG. 6, a metal (tungsten alloy in this embodiment) is electrolytically deposited on the electrode layer 22 exposed in each resist removal portion R <b> 1 formed by the lithography process, so that the pin body 31 is formed. It is a process of forming. In this embodiment, the thickness dimension of the electrolytically deposited tungsten alloy is set to 25 μm. In FIG. 6, a tungsten alloy electrodeposited is shown with a pattern.

抜き工程は、図7及び図8(図8は図7のa―a線断面図である)に示すように、対をなすピン本体31と絶縁フィルム2Fのうちこれらピン本体31に重合する領域とを、レジスト残余部R2と前記絶縁フィルム2Fのうちこれらピン本体31に重合しない領域とから抜く工程である。抜く態様としては、ピン本体31及び絶縁フィルム2Fのうちこれらピン本体31に重合する領域のみを積層方向にプレスして打ち抜く態様、又はレーザ加工によりピン本体31及び絶縁フィルム2Fのうちこれらピン本体31に重合する領域のみを積層方向に切り抜く態様等が挙げられる。この抜き加工により、ピン本体31からなるコンタクトピン3を基板2の両面に積層した概略角柱状のコンタクトプローブ1が複数成形される(図8参照)。   As shown in FIGS. 7 and 8 (FIG. 8 is a cross-sectional view taken along the line aa in FIG. 7), the punching process is a region of the paired pin body 31 and insulating film 2F that overlaps with these pin bodies 31. Are removed from the resist residual portion R2 and the region of the insulating film 2F that does not overlap with the pin body 31. As a mode of extraction, a mode in which only a region overlapping with the pin main body 31 in the pin main body 31 and the insulating film 2F is pressed in the stacking direction or punched out, or the pin main body 31 in the pin main body 31 and the insulating film 2F by laser processing is used. For example, only the region to be polymerized is cut out in the stacking direction. By this punching process, a plurality of substantially prismatic contact probes 1 in which the contact pins 3 made of the pin main body 31 are laminated on both surfaces of the substrate 2 are formed (see FIG. 8).

メッキ工程は、抜き工程により成形した各コンタクトプローブ1のうち一対のピン本体31にそれぞれメッキ加工を施しこれら各ピン本体31の外面にメッキ層32を形成する工程である。このメッキ工程により、各コンタクトピン3が、ピン本体31の外面をメッキ層32で被覆したものとなる。   The plating process is a process in which the pair of pin main bodies 31 of each contact probe 1 formed by the punching process is plated to form a plating layer 32 on the outer surface of each pin main body 31. By this plating step, each contact pin 3 is obtained by coating the outer surface of the pin body 31 with the plating layer 32.

除去工程は、図9に示すように、コンタクトプローブ1のうち、コンタクトピン3の先端部3aに対応する基板2の先端部2aを除去する工程である。除去する態様としては、例えば基板2の先端部2aを熱処理することにより基端側へ窪ませる態様や、基板2の先端部2aを切除する態様等が挙げられる。この除去工程を経ることにより、基板2の先端部2aが各コンタクトピン3の先端部3aよりも内方へ窪んだ形状となり、その結果、各コンタクトピン3の先端部3aが基板2に優先して被検査物Wに的確に接触し得るコンタクトプローブ1となる。なお、本実施形態では、前記抜き工程と同時に又は前後して各コンタクトピン3の先端部に面取り加工を施し、各コンタクトピン3が被検査物Wに線接触又は点接触し得るようにしている。   As shown in FIG. 9, the removing step is a step of removing the tip 2 a of the substrate 2 corresponding to the tip 3 a of the contact pin 3 in the contact probe 1. Examples of the removal include an embodiment in which the distal end portion 2a of the substrate 2 is heat-treated to be recessed toward the proximal end, and an embodiment in which the distal end portion 2a of the substrate 2 is cut away. Through this removal step, the tip 2a of the substrate 2 has a shape recessed inwardly from the tip 3a of each contact pin 3. As a result, the tip 3a of each contact pin 3 has priority over the substrate 2. Thus, the contact probe 1 can be brought into contact with the inspection object W accurately. In this embodiment, the tip of each contact pin 3 is chamfered simultaneously with or before or after the punching step so that each contact pin 3 can come into line contact or point contact with the object W to be inspected. .

以上の工程を経て製造された各コンタクトプローブ1は、絶縁フィルム2Fをコンタクトピン3の巾寸法に対応させて切断した基板2と、基板2の両面に設けた一対のコンタクトピン3とを備え、全長20mm、厚み寸法略100μm、巾寸法略100μmのマイクロ構造体となる。そして、このような構成をなすコンタクトプローブ1を一対にして図示しないソケット等の保持具にそれぞれ保持させる(例えば保持具に形成した孔に各コンタクトプローブ1の基端部を圧入する)ことにより、各コンタクトプローブ1の一方のコンタクトピン3を電流用コンタクトピンとして機能させるとともに、他方のコンタクトピン3を電圧測定用コンタクトピンとして機能させることにより、四端子測定を行うことが可能となる。   Each contact probe 1 manufactured through the above steps includes a substrate 2 obtained by cutting the insulating film 2F in accordance with the width dimension of the contact pin 3, and a pair of contact pins 3 provided on both surfaces of the substrate 2, The microstructure has a total length of 20 mm, a thickness dimension of approximately 100 μm, and a width dimension of approximately 100 μm. Then, by making a pair of contact probes 1 having such a configuration and holding them in a holder such as a socket (not shown) (for example, pressing the proximal end portion of each contact probe 1 into a hole formed in the holder), By making one contact pin 3 of each contact probe 1 function as a current contact pin and allowing the other contact pin 3 to function as a voltage measurement contact pin, four-terminal measurement can be performed.

このように、本実施形態に係るコンタクトプローブ1は、絶縁体21の両面にそれぞれ電極層22を積層した絶縁フィルム2Fの両面に金属製のピン本体31を形成した状態で絶縁フィルム2Fのうちこれらピン本体31に重合する領域を他の領域からピン本体31と共に抜くことによって成形したものであるため、従来のような各部品を相互に組み付けるという高度な組付精度が要求されず、容易且つ的確に積層状のコンタクトプローブ1を成形することができ、しかも、ピン本体31を構成する金属等の電解析出材の析出量を調節することによってコンタクトプローブ1全体の厚み寸法や巾寸法を可及的に小さくすることが可能となり、サイズが極めて小さい被検査物Wの測定にも好適に対応することができる。加えて、ピン本体31が電解析出により析出された金属製のものであるため、これら各ピン本体31によって基板2を挟んだコンタクトプローブ1全体の適度な剛性を確保することができ、このようなコンタクトプローブ1をソケット等の保持具に安定した状態で起立姿勢に保持させることができ、各コンタクトピン3を被検査物Wに的確に接触させることが可能となり、実用性に優れたものになる。さらに、コンタクトピン3の先端部3aに対応する基板2の先端部2aを除去し、各コンタクトピン3を基板2に優先して被検査物Wに確実に接触させるようにしているため、良好な導電性を確保し、より正確な測定を行うことができる。   As described above, the contact probe 1 according to this embodiment includes the insulating film 2F in which the metal pin main bodies 31 are formed on both surfaces of the insulating film 2F in which the electrode layers 22 are laminated on both surfaces of the insulator 21, respectively. Since the area overlapped with the pin body 31 is formed by pulling together with the pin body 31 from other areas, it does not require the high degree of assembly accuracy of assembling the parts together as in the past, and it is easy and accurate. The laminated contact probe 1 can be formed in a single layer, and the thickness and width of the contact probe 1 as a whole can be controlled by adjusting the amount of electrolytic depositing material such as metal constituting the pin body 31. Therefore, it is possible to cope with the measurement of the inspection object W having a very small size. In addition, since the pin main body 31 is made of metal deposited by electrolytic deposition, an appropriate rigidity of the entire contact probe 1 sandwiching the substrate 2 by each of the pin main bodies 31 can be ensured. The stable contact probe 1 can be held in a standing posture in a stable state by a holder such as a socket, and each contact pin 3 can be brought into precise contact with the object W to be inspected. Become. Furthermore, the tip 2a of the substrate 2 corresponding to the tip 3a of the contact pin 3 is removed, and each contact pin 3 is preferentially brought into contact with the inspection object W in preference to the substrate 2, so that it is good. Conductivity is ensured and more accurate measurement can be performed.

特に、ピン本体31が各電極層22に電解析出させたタングステン合金から形成したものであるため、構造体としての十分な強度と靭性、弾性を有するとともに、安定した電気的接続を確保できる。   In particular, since the pin main body 31 is formed from a tungsten alloy that is electrolytically deposited on each electrode layer 22, it has sufficient strength, toughness, and elasticity as a structure, and a stable electrical connection can be secured.

さらに、各コンタクトピン3が、ピン本体31の外面にメッキ層32を備えたものであるため、導電性及び耐酸化性の更なる向上を図ることが可能である。   Furthermore, since each contact pin 3 is provided with the plating layer 32 on the outer surface of the pin main body 31, it is possible to further improve the conductivity and the oxidation resistance.

また、本実施形態に係るコンタクトプローブ1は、上述した各工程を経ることによって製造するものであるため、高精度でありながら大量生産も可能であり、しかも、電解析出量やマスクMの露光用孔M1の各寸法を変更することによりコンタクトプローブ1の各寸法も容易に変更することが可能であり、極小化が進む被検査物Wのサイズを考慮した上で電解析出量やマスクMの露光用孔M1の各寸法を調節することにより各種被検査物を測定可能な各コンタクトピン2を有するコンタクトプローブ1となり、汎用性に富むものとなる。   In addition, since the contact probe 1 according to the present embodiment is manufactured through the above-described steps, it can be mass-produced with high accuracy, and the electrolytic deposition amount and the exposure of the mask M can be performed. The dimensions of the contact probe 1 can be easily changed by changing the dimensions of the hole M1, and the amount of electrolytic deposition and the mask M are taken into account in consideration of the size of the inspection object W whose miniaturization advances. By adjusting each dimension of the exposure hole M1, the contact probe 1 having each contact pin 2 capable of measuring various inspection objects becomes versatile.

なお、本発明は、以上に詳述した実施形態に限られるものではない。   The present invention is not limited to the embodiment described in detail above.

例えば、前記実施形態では、絶縁体としてテフロン(登録商標)系の樹脂を適用した場合を例示したが、これに限らず、絶縁体としてガラスエポキシを適用しても構わない。   For example, in the above-described embodiment, the case where a Teflon (registered trademark) resin is applied as an insulator is illustrated, but the present invention is not limited thereto, and glass epoxy may be applied as an insulator.

また、ピン本体を形成する電解析出材としてタングステン合金以外のものを適用してもよく、各コンタクトピンとしてピン本体のみからなる(メッキ層を有しない)ものを採用しても構わない。なお、コンタクトピンとしてメッキ層を有するものを採用する場合、ピン本体にメッキ加工を施すタイミングは、前記電解析出工程の後、又は抜き工程の後、或いは除去工程の後の何れであっても構わない。   Further, as the electrodeposited material forming the pin body, a material other than the tungsten alloy may be applied, and each contact pin may be composed of only the pin body (having no plating layer). When a contact pin having a plating layer is employed, the timing of applying a plating process to the pin body may be after the electrolytic deposition step, after the removal step, or after the removal step. I do not care.

さらに、概略円柱状をなし且つ各コンタクトピンの先端部を基板の先端部よりも優先して被検査物に接触し得るようにしたコンセントプローブとしてもよい。この場合の一例として、図10に示すような断面形状をなすコンタクトプローブX1が挙げられる。この場合、絶縁体X21を有する基板X2をサンドイッチするように断面視略半円状のコンタクトピンX3を設けることが望ましい。なお、図10では各コンタクトピンX3としてピン本体X31とメッキ層X32とを層状にしたものを例示しているが、前述したようにメッキを有さないものであっても構わない。   Furthermore, it is good also as an outlet probe which comprised the substantially cylindrical shape and was able to contact the to-be-inspected object in preference to the front-end | tip part of each contact pin over the front-end | tip part of a board | substrate. An example of this case is a contact probe X1 having a cross-sectional shape as shown in FIG. In this case, it is desirable to provide the contact pin X3 having a substantially semicircular cross-sectional view so as to sandwich the substrate X2 having the insulator X21. In FIG. 10, each contact pin X3 is illustrated as having a pin body X31 and a plating layer X32 layered. However, as described above, the contact pin X3 may have no plating.

また、図3等では、マスクを通して放射光を照射することにより、絶縁フィルムの両面に前記レジスト除去部を所定ピッチで一列状に複数形成する態様を例示したが、これに限らず、絶縁フィルムの両面に前記レジスト除去部を所定ピッチで複数列状に形成する態様を採用してもよい。これにより更なる量産が可能となる。   Moreover, in FIG. 3 etc., although the aspect which forms multiple said resist removal parts in a predetermined pitch on both surfaces of an insulating film by irradiating radiated light through a mask was illustrated, not only this but an insulating film You may employ | adopt the aspect which forms the said resist removal part in multiple rows | lines at a predetermined pitch on both surfaces. This enables further mass production.

その他、各部の具体的構成についても上記実施形態に限られるものではなく、本発明の趣旨を逸脱しない範囲で種々変形が可能である。   In addition, the specific configuration of each part is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention.

本発明の一実施形態に係るコンタクトプローブの全体斜視図。1 is an overall perspective view of a contact probe according to an embodiment of the present invention. 同実施形態に係るコンタクトプローブを製造する際に使用する絶縁フィルムの全体斜視図。The whole perspective view of the insulating film used when manufacturing the contact probe which concerns on the embodiment. 同実施形態におけるリソグラフィ工程を模式的に示す図。The figure which shows the lithography process in the embodiment typically. 同実施形態に係るコンタクトプローブを製造する際に使用するマスクMの平面図。The top view of the mask M used when manufacturing the contact probe which concerns on the embodiment. 同実施形態におけるリソグラフィ工程を模式的に示す図。The figure which shows the lithography process in the embodiment typically. 同実施形態における電解析出工程を模式的に示す図。The figure which shows typically the electrolytic deposition process in the same embodiment. 同実施形態において抜き工程を経たコンタクトプローブを模式的に示す図。The figure which shows typically the contact probe which passed through the extraction process in the embodiment. 図7のa―a線断面図。FIG. 8 is a sectional view taken along line aa in FIG. 7. 同実施形態に係るコンタクトプローブの先端部の断面を模式的に示す図。The figure which shows typically the cross section of the front-end | tip part of the contact probe which concerns on the same embodiment. 同実施形態の一変形に係るコンタクトプローブの横断面を模式的に示す図。The figure which shows typically the cross section of the contact probe which concerns on one deformation | transformation of the embodiment.

符号の説明Explanation of symbols

1、X1…コンタクトプローブ
2、X2…基板
21、X21…絶縁体
22、X22…電極層
2F…絶縁フィルム
3、X3…コンタクトピン
31、X31…ピン本体
32、X32…メッキ層
M…マスク
R…レジスト
R1…レジスト除去部
R2…レジスト残余部
W…被検査物
DESCRIPTION OF SYMBOLS 1, X1 ... Contact probe 2, X2 ... Board | substrate 21, X21 ... Insulator 22, X22 ... Electrode layer 2F ... Insulating film 3, X3 ... Contact pin 31, X31 ... Pin main body 32, X32 ... Plating layer M ... Mask R ... Resist R1 ... resist removal portion R2 ... resist residue W ... inspection

Claims (6)

四端子測定に使用されるコンタクトプローブであって、
基板と、当該基板の両面に設けた一対のコンタクトピンとを具備してなり、
前記基板が、絶縁体の両面にそれぞれ電極層を積層した絶縁フィルムを前記コンタクトピンの巾寸法に対応させて切断したものであり、
前記各コンタクトピンが、前記各電極層のうち当該コンタクトピンの巾寸法に相当する領域に電解析出させた金属からなるピン本体を少なくとも備えたものであり、
前記絶縁フィルムの両面に前記ピン本体を形成した状態で前記絶縁フィルムのうちこれらピン本体に重合する領域を他の領域からピン本体と共に抜き且つコンタクトピンの先端部に対応する基板の先端部を除去したものであることを特徴とするコンタクトプローブ。
A contact probe used for four-terminal measurement,
Comprising a substrate and a pair of contact pins provided on both sides of the substrate;
The substrate is an insulating film obtained by laminating an electrode layer on each side of an insulator, corresponding to the width dimension of the contact pin,
Each contact pin includes at least a pin body made of metal electrolytically deposited in a region corresponding to the width dimension of the contact pin in each electrode layer,
With the pin body formed on both sides of the insulating film, the region of the insulating film that overlaps with the pin body is removed from the other region together with the pin body, and the tip of the substrate corresponding to the tip of the contact pin is removed. A contact probe characterized by the above.
前記ピン本体が前記各電極層に電解析出させたタングステン合金から形成している請求項1記載のコンタクトプローブ。 The contact probe according to claim 1, wherein the pin body is formed of a tungsten alloy that is electrolytically deposited on each of the electrode layers. 前記各コンタクトピンが、前記ピン本体の外面にメッキ層を備えたものである請求項1又は2記載のコンタクトプローブ。 The contact probe according to claim 1, wherein each of the contact pins has a plating layer on an outer surface of the pin body. 四端子測定に使用されるコンタクトプローブを製造する方法であって、
絶縁体の両面にそれぞれ電極層を積層してなる絶縁フィルムの両面にそれぞれ塗布したレジストにマスクを通して放射光を照射することにより、前記絶縁フィルムの両面に少なくとも前記コンタクトピンの巾寸法に相当する巾寸法を有するレジスト除去部を所定ピッチで複数形成するリソグラフィ工程と、
当該リソグラフィ工程により形成された前記各レジスト除去部に露出する前記電極層にそれぞれ金属を電解析出してピン本体を形成する電解析出工程と、
前記ピン本体及び前記絶縁フィルムのうちこれらピン本体に重合する領域を、レジスト残余部及び前記絶縁フィルムのうちこれらピン本体に重合しない領域から抜く抜き工程と、
前記コンタクトピンの先端部に対応する前記基板の先端部を除去する除去工程とを経ることにより、
前記絶縁フィルムをコンタクトピンの巾寸法に対応させて切断した基板と、当該基板の両面に設けられ少なくとも前記ピン本体を有する一対のコンタクトピンとを具備したコンタクトプローブを製造することを特徴とするコンタクトプローブの製造方法。
A method of manufacturing a contact probe used for four-terminal measurement,
A width corresponding to at least the width dimension of the contact pins is provided on both surfaces of the insulating film by irradiating the resist applied to both surfaces of the insulating film on both surfaces of the insulator with radiation light through a mask. A lithography step of forming a plurality of resist removal portions having dimensions at a predetermined pitch;
An electrolytic deposition process in which a metal is electrolytically deposited on each of the electrode layers exposed in the resist removal portions formed by the lithography process to form a pin body;
The step of pulling out the region of the pin body and the insulating film that overlaps with the pin body from the region of the resist remaining portion and the insulating film that does not overlap with the pin body,
By going through a removal step of removing the tip of the substrate corresponding to the tip of the contact pin,
A contact probe comprising: a substrate obtained by cutting the insulating film in accordance with a width dimension of a contact pin; and a pair of contact pins provided on both sides of the substrate and having at least the pin body. Manufacturing method.
前記電解析出工程が、前記電極層にそれぞれタングステン合金を電解析出してピン本体を形成するものである請求項4記載のコンタクトプローブの製造方法。 The method of manufacturing a contact probe according to claim 4, wherein in the electrolytic deposition step, a tungsten alloy is electrolytically deposited on each of the electrode layers to form a pin body. 前記ピン本体の外面にメッキ加工を施すメッキ工程を経る請求項4又は5記載のコンタクトプローブの製造方法。
The method of manufacturing a contact probe according to claim 4 or 5, wherein a plating process is performed in which an outer surface of the pin body is plated.
JP2006298852A 2006-11-02 2006-11-02 Contact probe and method of manufacturing contact probe Active JP4783265B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006298852A JP4783265B2 (en) 2006-11-02 2006-11-02 Contact probe and method of manufacturing contact probe

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006298852A JP4783265B2 (en) 2006-11-02 2006-11-02 Contact probe and method of manufacturing contact probe

Publications (2)

Publication Number Publication Date
JP2008116284A true JP2008116284A (en) 2008-05-22
JP4783265B2 JP4783265B2 (en) 2011-09-28

Family

ID=39502337

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006298852A Active JP4783265B2 (en) 2006-11-02 2006-11-02 Contact probe and method of manufacturing contact probe

Country Status (1)

Country Link
JP (1) JP4783265B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170107465A (en) * 2014-12-30 2017-09-25 테크노프로브 에스.피.에이. Contact probe for test head
WO2023277452A1 (en) * 2021-06-28 2023-01-05 (주)포인트엔지니어링 Electrically conductive contact pin and method for manufacturing same
WO2023277407A1 (en) * 2021-06-28 2023-01-05 (주)포인트엔지니어링 Electrically conductive contact pin

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001021581A (en) * 1999-07-08 2001-01-26 Micronics Japan Co Ltd Manufacture of probe assembly
JP2003123874A (en) * 2001-10-16 2003-04-25 Micronics Japan Co Ltd Contactor and manufacturing method of the same, and electric connection device
JP2003139796A (en) * 2001-08-22 2003-05-14 Mitsubishi Materials Corp Contact probe and method of manufacturing the same
WO2006068156A1 (en) * 2004-12-22 2006-06-29 Opto System Co., Ltd. Kelvin probe

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001021581A (en) * 1999-07-08 2001-01-26 Micronics Japan Co Ltd Manufacture of probe assembly
JP2003139796A (en) * 2001-08-22 2003-05-14 Mitsubishi Materials Corp Contact probe and method of manufacturing the same
JP2003123874A (en) * 2001-10-16 2003-04-25 Micronics Japan Co Ltd Contactor and manufacturing method of the same, and electric connection device
WO2006068156A1 (en) * 2004-12-22 2006-06-29 Opto System Co., Ltd. Kelvin probe

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170107465A (en) * 2014-12-30 2017-09-25 테크노프로브 에스.피.에이. Contact probe for test head
JP2018501490A (en) * 2014-12-30 2018-01-18 テクノプローベ エス.ピー.エー. Contact probe for test head
KR102502965B1 (en) 2014-12-30 2023-02-23 테크노프로브 에스.피.에이. Contact probe for test head
WO2023277452A1 (en) * 2021-06-28 2023-01-05 (주)포인트엔지니어링 Electrically conductive contact pin and method for manufacturing same
WO2023277407A1 (en) * 2021-06-28 2023-01-05 (주)포인트엔지니어링 Electrically conductive contact pin

Also Published As

Publication number Publication date
JP4783265B2 (en) 2011-09-28

Similar Documents

Publication Publication Date Title
JP5903888B2 (en) Connection terminal and inspection jig
JP5103566B2 (en) Electrical contact and inspection jig having the same
WO2014038372A1 (en) Current detection resistor
KR101235228B1 (en) Work member, electric contact member, contact probe, and manufacturing method of electric contact member
WO2007086147A1 (en) Current testing probe, probe assembly and method for manufacturing such probe assembly
JP6872960B2 (en) Electrical connection device
JP2015230314A (en) Probe and method for manufacturing the same
US20210035701A1 (en) Cylindrical body and method for producing same
JP6283929B2 (en) Inspection jig and method for manufacturing inspection jig
JP2001118701A (en) Low-resistance resistor for detecting current and its manufacturing method
JP4783265B2 (en) Contact probe and method of manufacturing contact probe
TWI457571B (en) Inspection probe and inspection fixture
JP2009210443A (en) Contact probe and method for manufacturing the same
JP4624372B2 (en) Multilayer electrical probe
JPWO2020017159A1 (en) Probes, inspection jigs, inspection equipment, and methods for manufacturing probes
KR20120131887A (en) Probe needle and probe card using the same
WO2012176289A1 (en) Spiral probe and manufacturing method for same
TWM495641U (en) Contact probe
JP2010050469A (en) Method of manufacturing resistor for current detection
KR101757742B1 (en) Probe and Probe Manufacturing Method
KR102271347B1 (en) Probe-head for led probe device
JP2016011925A (en) Contact probe and contact probe unit
JP2006098066A (en) Probe needle, using method therefor, and manufacturing method for probe needle
JP2017181477A (en) Contact probe device
CN117054698A (en) Method for preparing probe tip and probe tip prepared by the same

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090909

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110622

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110705

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110708

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140715

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4783265

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250