JP2008112864A - Light-emitting device - Google Patents

Light-emitting device Download PDF

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JP2008112864A
JP2008112864A JP2006294899A JP2006294899A JP2008112864A JP 2008112864 A JP2008112864 A JP 2008112864A JP 2006294899 A JP2006294899 A JP 2006294899A JP 2006294899 A JP2006294899 A JP 2006294899A JP 2008112864 A JP2008112864 A JP 2008112864A
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led chip
light
emitting device
resin
sealing
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Mikio Masui
幹生 桝井
Kazunari Kuzuhara
一功 葛原
Keiichi Yamazaki
圭一 山崎
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Panasonic Electric Works Co Ltd
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Matsushita Electric Works Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting device in which long-term reliability can be improved. <P>SOLUTION: In the light-emitting device 1, a package for an LED 10 is formed by a mounting substrate 20 on which the LED chip 10 irradiating a visible light is mounted and a color converting member 70, and the LED chip 10 mounted on the mounting substrate 20 is sealed with a sealing portion 50 made of a sealing resin. The sealing portion 50 is formed of a sealing resin made of a silicone resin not containing aromatic functional group in a molecular structure. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、LEDチップ(発光ダイオードチップ)を利用した発光装置に関するものである。   The present invention relates to a light emitting device using an LED chip (light emitting diode chip).

近年、LEDチップと、LEDチップ用のパッケージとを備えた発光装置において、ペッケージからの放熱性を高めて光出力の高出力化を可能とした発光装置が各所で研究開発されている(例えば、特許文献1参照)。   In recent years, in a light emitting device including an LED chip and a package for the LED chip, light emitting devices capable of increasing the heat radiation from the package and increasing the light output have been researched and developed in various places (for example, Patent Document 1).

ここにおいて、上記特許文献1には、図5に示すように、LEDチップ10’と、LEDチップ10’が実装された実装基板20’と、実装基板20’におけるLEDチップ10’の実装面側でLEDチップ10’を囲んだ枠体40’と、枠体40’の内側でLEDチップ10’および当該LEDチップ10’に電気的に接続された2本のボンディングワイヤ14’,14’を封止した透明な封止樹脂(エポキシ樹脂またはシリコーン樹脂)からなる封止部50’とを備えた発光装置1’が提案されている(特許文献1参照)。   Here, in Patent Document 1, as shown in FIG. 5, the LED chip 10 ′, the mounting substrate 20 ′ on which the LED chip 10 ′ is mounted, and the mounting surface side of the LED chip 10 ′ on the mounting substrate 20 ′. The frame body 40 ′ surrounding the LED chip 10 ′ and the LED chip 10 ′ and the two bonding wires 14 ′ and 14 ′ electrically connected to the LED chip 10 ′ inside the frame body 40 ′ are sealed. There has been proposed a light emitting device 1 ′ including a sealed portion 50 ′ made of a stopped transparent sealing resin (epoxy resin or silicone resin) (see Patent Document 1).

図5に示した発光装置1’は、実装基板20’が、セラミックス(例えば、AlN)により形成されLEDチップ10’が一表面側に搭載されるサブマウント部材30’と、Cu,Alなどの熱伝導性の高い金属により形成されサブマウント部材30’が一面側の中央部に固着される伝熱板21’と、伝熱板21’の上記一面側に固着されるガラスエポキシ基板により形成され中央部にLEDチップ10’を露出させるための窓孔24’を有する配線基板22’とで構成されており、実装基板20’と枠体40’とでLEDチップ用のパッケージを構成している。ここで、配線基板22’は、伝熱板21’側とは反対側の表面に、LEDチップ10’への給電用の一対の配線パターン23’,23’が設けられており、図5におけるLEDチップ10’の上面に設けられたカソード電極(図示せず)がボンディングワイヤ14’を介して一方の配線パターン23’と直接接続され、LEDチップ10’の下面に設けられたアノード電極(図示せず)がサブマウント部材30’の一表面に形成されている電極パターン(図示せず)およびボンディングワイヤ14’を介して他方の配線パターン23’と接続されている。   The light emitting device 1 ′ shown in FIG. 5 includes a submount member 30 ′ in which the mounting substrate 20 ′ is formed of ceramics (for example, AlN) and the LED chip 10 ′ is mounted on one surface side, Cu, Al, or the like. The heat transfer plate 21 'is formed of a metal having high heat conductivity and the submount member 30' is fixed to the central portion on one surface side, and the glass epoxy substrate is fixed to the one surface side of the heat transfer plate 21 '. It is comprised by wiring board 22 'which has window hole 24' for exposing LED chip 10 'in the center part, and package for LED chips is constituted by mounting board 20' and frame 40 '. . Here, the wiring board 22 ′ is provided with a pair of wiring patterns 23 ′ and 23 ′ for supplying power to the LED chip 10 ′ on the surface opposite to the heat transfer plate 21 ′, as shown in FIG. A cathode electrode (not shown) provided on the upper surface of the LED chip 10 ′ is directly connected to one wiring pattern 23 ′ via a bonding wire 14 ′, and an anode electrode (not shown) provided on the lower surface of the LED chip 10 ′. (Not shown) is connected to the other wiring pattern 23 ′ via an electrode pattern (not shown) formed on one surface of the submount member 30 ′ and a bonding wire 14 ′.

ところで、上記特許文献1には、LEDチップ10’として青色光を放射するものを用い、封止部50’にYAG蛍光体を含有させておくことにより、白色発光が可能となることが記載されている。また、枠体40’の内周面に金属膜からなる反射膜を設けることが記載されている。なお、この種の反射膜を構成する金属膜の材料としては、青色光の反射率の高い金属であるAgやNiを採用することが提案されている(例えば、特許文献2参照)。ここで、上記特許文献2には、枠体をAl,Cuなどの金属により形成して反射部材として用いることも記載されている。   By the way, the above-mentioned Patent Document 1 describes that white light can be emitted by using a LED chip 10 ′ that emits blue light and containing a YAG phosphor in the sealing portion 50 ′. ing. It also describes that a reflective film made of a metal film is provided on the inner peripheral surface of the frame 40 '. It has been proposed to employ Ag or Ni, which is a metal having a high blue light reflectance, as the material of the metal film constituting this type of reflective film (see, for example, Patent Document 2). Here, Patent Document 2 also describes that the frame is formed of a metal such as Al or Cu and used as a reflecting member.

また、図5に示した発光装置1’のように、セラミックスからなるサブマウント部材30’の上記一表面側の上記電極パターンにLEDチップ10’を接合している場合、サブマウント部材30’の上記一表面における上記電極パターンの周囲にAl,Ag,Niなどの金属からなる反射膜を設けることで、LEDチップ10’の側面から放射された光がサブマウント部材30’に吸収されるのを防止して、光出力のより一層の高出力化を図ることも考えられる。
特開2006−5290号公報(段落〔0020〕,〔0011〕−〔0015〕、および、図5,図1) 特開2005−294292号公報(段落〔0033〕、および、図1)
Further, as in the light emitting device 1 ′ shown in FIG. 5, when the LED chip 10 ′ is bonded to the electrode pattern on the one surface side of the ceramic submount member 30 ′, the submount member 30 ′ By providing a reflective film made of a metal such as Al, Ag, or Ni around the electrode pattern on the one surface, light emitted from the side surface of the LED chip 10 ′ is absorbed by the submount member 30 ′. In order to prevent this, it is conceivable to further increase the optical output.
Japanese Patent Laying-Open No. 2006-5290 (paragraphs [0020], [0011]-[0015], and FIGS. 5 and 1) Japanese Patent Laying-Open No. 2005-294292 (paragraph [0033] and FIG. 1)

ところで、上述のようにLEDチップ10’を封止した封止樹脂からなる封止部50’を備えた発光装置1’では、長期使用した場合に、封止部50’の透過率が徐々に低下することにより光束が低下することが懸念されているが、封止部50’の透過率の減少は、光、熱、湿気などによる封止樹脂の分解により引き起こされ、特に、高温・高湿の条件下では通電時に封止樹脂の分解反応が起こりやすくなるので、長期信頼性に問題があった。   By the way, in light-emitting device 1 'provided with sealing part 50' which consists of sealing resin which sealed LED chip 10 'as mentioned above, when used for a long term, the transmittance | permeability of sealing part 50' is gradually. Although there is a concern that the luminous flux decreases due to the decrease, the decrease in the transmittance of the sealing portion 50 ′ is caused by the decomposition of the sealing resin due to light, heat, moisture, etc. Under these conditions, the decomposition reaction of the sealing resin is likely to occur during energization, so there was a problem in long-term reliability.

ここにおいて、本願発明者らは、青色光を放射するLEDチップと、AlNからなるサブマウント部材を有する実装基板と、シリコーン樹脂により形成されたゲル状の封止部とを備え、サブマウント部材の一表面にAl膜からなる反射膜を形成してなる発光装置に関して、光取り出し効率の向上を目的として分子構造中に芳香族系官能基を含ませることで屈折率を高めたシリコーン樹脂を封止樹脂として採用したものについて、温度:85℃、相対湿度:85%RH、断続通電の試験条件で信頼性加速試験を行い、光学顕微鏡、SEM、XPS、SIMS、AES、XMAなどを用いた分析結果に基づいて光束低下の原因を検討したところ、LEDチップの光取り出し面上にAlが堆積し、当該光取り出し面近傍の封止部が黒色化しているという知見を得た(図6に一例として、封止部50におけるLEDチップ10の光取り出し面側に黒色化した部分Xが形成された状態の写真を示す)。また、本願発明者らは、サブマウント部材の一表面に形成する反射膜の材料としてAgを採用した発光装置についても、同条件の信頼性加速試験を行った場合に、封止部の黒色化が起こるという知見を得た。   Here, the inventors of the present application include an LED chip that emits blue light, a mounting substrate having a submount member made of AlN, and a gel-like sealing portion formed of silicone resin. For light-emitting devices that have a reflective film made of an Al film on one surface, silicone resin with an increased refractive index is sealed by including an aromatic functional group in the molecular structure for the purpose of improving light extraction efficiency. For the resin used, a reliability acceleration test was performed under the conditions of temperature: 85 ° C., relative humidity: 85% RH, intermittent energization, and analysis results using an optical microscope, SEM, XPS, SIMS, AES, XMA, etc. As a result of examining the cause of the decrease in luminous flux based on the above, when Al is deposited on the light extraction surface of the LED chip, the sealing portion in the vicinity of the light extraction surface is blackened Was obtained cormorants findings (as an example in FIG. 6 shows a photograph of a state where blackened portion X on the light extraction surface of the LED chip 10 is formed in the sealing portion 50). In addition, the inventors of the present application also made the sealing portion black when a reliability acceleration test under the same conditions was performed on a light emitting device employing Ag as a material of the reflective film formed on one surface of the submount member. I got the knowledge that happens.

また、分子構造中にジメチル基を含んだシリコーン樹脂により形成されたゲル状の封止部を備えた比較例1の発光装置、分子構造中にジメチル基を含んだシリコーン樹脂により形成されたゴム状の封止部を備えた比較例2の発光装置、分子構造中にフェニル基を含んだシリコーン樹脂により形成されたゲル状の封止部を備えた比較例3の発光装置、それぞれについて、加速試験を行ったところ、比較例3の発光装置では、封止部の着色に伴う光出力の低下が起こったのに対して、比較例1,2の各発光装置では、封止部の着色は起こらなかった。   In addition, the light emitting device of Comparative Example 1 provided with a gel-like sealing portion formed of a silicone resin containing a dimethyl group in the molecular structure, and a rubber-like shape formed of a silicone resin containing a dimethyl group in the molecular structure Acceleration test for each of the light emitting device of Comparative Example 2 provided with the sealing part and the light emitting device of Comparative Example 3 provided with a gel-like sealing part formed of a silicone resin containing a phenyl group in the molecular structure. As a result, in the light emitting device of Comparative Example 3, the light output decreased due to the coloring of the sealing portion, whereas in each of the light emitting devices of Comparative Examples 1 and 2, coloring of the sealing portion did not occur. There wasn't.

そこで、本願発明者らは、配線材料、電極材料、基板材料、反射膜材料などに多用されているAlやAgが、パッケージにおいて封止部に接する部位の材料として用いられている場合に、封止部の黒色化が起こるメカニズムとして、(1)「LEDチップへの通電時に、パッケージにおいて封止部に接している部位の金属が金属イオンとして封止部中へ溶出し、封止部中を拡散移動する」、(2)「特に光エネルギの強いLEDチップの光取り出し面側において金属イオンにより封止樹脂の分解が促進され着色に至る」、(3)「封止部において着色された部分がLEDチップからの光を吸収して局所的に発熱する」、(4)「当該発熱した部分で封止樹脂の分解が促進され着色部分が広がる」、(5)「(3)→(4)→(3)→(4)→・・・が連鎖的に起こることにより封止部が黒色化する」、というメカニズムを考えた。   Therefore, the inventors of the present application have encapsulated a case where Al or Ag, which is frequently used for wiring materials, electrode materials, substrate materials, reflective film materials, etc., is used as a material for a portion in contact with a sealing portion in a package. As the mechanism of blackening of the stop portion, (1) “When the LED chip is energized, the metal in the part in contact with the sealing portion in the package elutes into the sealing portion as metal ions, and the inside of the sealing portion "Diffusion movement", (2) "Particularly promoted decomposition of the sealing resin by the metal ions on the light extraction surface side of the LED chip with strong light energy, resulting in coloring", (3) "Part colored in the sealing part Absorbs light from the LED chip and locally generates heat ”, (4)“ decomposition of the sealing resin is promoted in the generated heat portion, and a colored portion spreads ”, (5)“ (3) → (4 ) → (3) → (4) → · The sealing portion is blackened by occurring chained ", considering the mechanism of.

本発明は上記事由に鑑みて為されたものであり、その目的は、長期信頼性の向上を図れる発光装置を提供することにある。   The present invention has been made in view of the above reasons, and an object of the present invention is to provide a light emitting device capable of improving long-term reliability.

請求項1の発明は、可視光を放射するLEDチップと、LEDチップ用のパッケージと、当該パッケージの所定部位に実装されたLEDチップを封止した封止部とを備え、当該封止部は、分子構造中に芳香族系官能基を含んでいないシリコーン樹脂からなる封止樹脂により形成されてなることを特徴とする。   The invention of claim 1 includes an LED chip that emits visible light, a package for the LED chip, and a sealing portion that seals the LED chip mounted on a predetermined portion of the package, It is characterized by being formed of a sealing resin made of a silicone resin that does not contain an aromatic functional group in the molecular structure.

この発明によれば、パッケージの所定部位に実装されたLEDチップを封止した封止部が芳香族系官能基を含んでいないシリコーン樹脂からなる封止樹脂により形成されていることにより、封止樹脂が分解されただけでは可視光の吸収が起こらないので、封止部の黒色化が起こりにくくなり、長期信頼性の向上を図れる。   According to this invention, since the sealing part which sealed the LED chip mounted in the predetermined site | part of the package is formed with sealing resin which consists of silicone resin which does not contain an aromatic functional group, sealing is carried out. Absorption of visible light does not occur only by decomposing the resin, so that blackening of the sealing portion is difficult to occur, and long-term reliability can be improved.

請求項1の発明では、長期信頼性の向上を図れるという効果がある。   In the invention of claim 1, there is an effect that long-term reliability can be improved.

以下、本実施形態の発光装置1について図1〜図4を参照しながら説明する。   Hereinafter, the light-emitting device 1 of the present embodiment will be described with reference to FIGS.

本実施形態の発光装置1は、可視光(本実施形態では、青色光)を放射するLEDチップ10と、LEDチップ10が実装された実装基板20と、LEDチップ10から放射された光の配光を制御する光学部材であって実装基板20との間にLEDチップ10を収納する形で実装基板20の一表面側(図1における上面側)に固着された透光性材料からなるドーム状の光学部材60と、光学部材60と実装基板20とで囲まれた空間に充実されLEDチップ10および当該LEDチップ10に電気的に接続された2本のボンディングワイヤ14,14を封止した透明な封止樹脂からなるゲル状の封止部50と、LEDチップ10から放射され封止部50および光学部材60を透過した光によって励起されてLEDチップ10の発光色とは異なる色の光を放射する蛍光体および透光性材料により形成されたものであって実装基板20の上記一表面側において実装基板20との間に光学部材60を囲む形で配設されるドーム状の色変換部材70とを備えている。ここにおいて、色変換部材70は、実装基板20の上記一表面側において光学部材60の光出射面60bとの間に空気層80が形成されるように配設されている。なお、本実施形態では、実装基板20と色変換部材70とでLEDチップ10用のパッケージを構成し、封止部50が、パッケージの所定部位に実装されたLEDチップ10を封止している。   The light emitting device 1 of the present embodiment includes an LED chip 10 that emits visible light (blue light in the present embodiment), a mounting substrate 20 on which the LED chip 10 is mounted, and a distribution of light emitted from the LED chip 10. An optical member that controls light and is a dome shape made of a translucent material fixed to one surface side (the upper surface side in FIG. 1) of the mounting substrate 20 so as to house the LED chip 10 between the mounting substrate 20. Of the optical member 60 and the space surrounded by the optical member 60 and the mounting substrate 20, and the LED chip 10 and the two bonding wires 14 and 14 electrically connected to the LED chip 10 are sealed. Different from the emission color of the LED chip 10 when excited by the light emitted from the LED chip 10 and transmitted through the sealing part 50 and the optical member 60. A dome shape formed of a fluorescent material that emits light of a color and a light-transmitting material and disposed around the optical member 60 between the mounting substrate 20 and the one surface side of the mounting substrate 20. The color conversion member 70 is provided. Here, the color conversion member 70 is disposed so that an air layer 80 is formed between the light emitting surface 60 b of the optical member 60 on the one surface side of the mounting substrate 20. In the present embodiment, the mounting substrate 20 and the color conversion member 70 constitute a package for the LED chip 10, and the sealing unit 50 seals the LED chip 10 mounted on a predetermined portion of the package. .

本実施形態の発光装置1は、例えば照明器具の光源として用いるものであり、例えば、シリカやアルミナなどのフィラーからなる充填材を含有し加熱時に低粘度化する樹脂シート(例えば、溶融シリカを高充填したエポキシ樹脂シートのような有機グリーンシート)により形成される絶縁層90を介して金属(例えば、Al、Cuなどの熱伝導率の高い金属)製の器具本体100に接合することによって、発光装置1と器具本体100との間にサーコン(登録商標)のようなゴムシート状の放熱シートなどを挟む場合に比べて、LEDチップ10から器具本体100までの熱抵抗を小さくすることができて放熱性が向上し、LEDチップ10のジャンクション温度の温度上昇を抑制できるから、入力電力を大きくでき、光出力の高出力化を図れる。ここで、照明器具の光源として用いる場合には、所望の光出力が得られるように、器具本体100に複数個の発光装置1を実装して複数個の発光装置1を直列接続したり並列接続したりすればよい。   The light-emitting device 1 of this embodiment is used as a light source of a lighting fixture, for example. For example, a resin sheet containing a filler made of a filler such as silica or alumina and having a low viscosity when heated (for example, a fused silica having a high viscosity). Light is emitted by bonding to an instrument body 100 made of metal (for example, metal having high thermal conductivity such as Al and Cu) through an insulating layer 90 formed of an organic green sheet such as a filled epoxy resin sheet. Compared with a case where a rubber sheet-like heat radiation sheet such as Sarcon (registered trademark) is sandwiched between the apparatus 1 and the instrument body 100, the thermal resistance from the LED chip 10 to the instrument body 100 can be reduced. Since heat dissipation is improved and the temperature rise of the junction temperature of the LED chip 10 can be suppressed, the input power can be increased and the light output can be increased. That. Here, when used as a light source of a lighting fixture, a plurality of light emitting devices 1 are mounted on the fixture main body 100 so that a desired light output is obtained, and the plurality of light emitting devices 1 are connected in series or in parallel. You can do it.

LEDチップ10は、青色光を放射するGaN系青色LEDチップであって、厚み方向の一表面側(図1における下面側)にアノード電極(図示せず)が形成されるとともに、厚み方向の他表面側(図1における上面側)にカソード電極(図示せず)が形成されており、上記他表面側を光取り出し面側としているが、側面からも青色光が放射される。ここにおいて、アノード電極およびカソード電極は、下層側のNi膜と上層側のAu膜との積層膜により構成されている。   The LED chip 10 is a GaN-based blue LED chip that emits blue light. An anode electrode (not shown) is formed on one surface side in the thickness direction (the lower surface side in FIG. 1), and the other in the thickness direction. A cathode electrode (not shown) is formed on the surface side (upper surface side in FIG. 1), and the other surface side is the light extraction surface side, but blue light is also emitted from the side surface. Here, the anode electrode and the cathode electrode are formed of a laminated film of a lower layer Ni film and an upper layer Au film.

実装基板20は、LEDチップ10が一表面側に搭載されるサブマウント部材30と、熱伝導性材料により形成されサブマウント部材30が一面側(図1における上面側)の中央部に固着される矩形板状の伝熱板21と、伝熱板21の上記一面側に例えばポリオレフィン系の固着シート29(図2参照)を介して固着される矩形板状のフレキシブルプリント配線板により形成され中央部にサブマウント部材30を露出させる矩形状の窓孔24を有する配線基板22とで構成されている。したがって、LEDチップ10で発生した熱が配線基板22を介さずにサブマウント部材30および伝熱板21に伝熱されるようになっている。   The mounting substrate 20 is formed of a heat conductive material and the submount member 30 on which the LED chip 10 is mounted on one surface side, and the submount member 30 is fixed to the central portion on the one surface side (upper surface side in FIG. 1). A rectangular plate-shaped heat transfer plate 21 and a central portion formed by a rectangular plate-shaped flexible printed wiring board fixed to the one surface side of the heat transfer plate 21 via, for example, a polyolefin-based fixing sheet 29 (see FIG. 2). And a wiring board 22 having a rectangular window hole 24 through which the submount member 30 is exposed. Therefore, the heat generated in the LED chip 10 is transferred to the submount member 30 and the heat transfer plate 21 without passing through the wiring board 22.

上述の伝熱板21は、Cuからなる金属板を基礎とし、当該金属板の一表面側(図1における下面側)にAu膜からなるコーティング膜21aが形成されるとともに、他表面側(図1における上面側)にAu膜からなるコーティング膜21bが形成されている。   The heat transfer plate 21 is based on a metal plate made of Cu, and a coating film 21a made of an Au film is formed on one surface side (the lower surface side in FIG. 1) of the metal plate, and the other surface side (see FIG. 1 is formed with a coating film 21b made of an Au film.

一方、配線基板22は、ポリイミドフィルムからなる絶縁性基材22aの一表面側に、LEDチップ10への給電用の一対の配線パターン23,23が設けられるとともに、各配線パターン23,23および絶縁性基材22aにおいて配線パターン23,23が形成されていない部位を覆う白色系の樹脂からなるレジスト層26が積層されている。したがって、LEDチップ10の側面から放射されレジスト層26の表面に入射した光がレジスト層26の表面で反射されるので、LEDチップ10から放射された光が配線基板22に吸収されるのを防止することができ、外部への光取り出し効率の向上による光出力の向上を図れる。ここにおいて、LEDチップ10は、上記カソード電極がボンディングワイヤ14を介して一方の配線パターン23と電気的に接続され、上記アノード電極がサブマウント部材30の電極パターン31およびボンディングワイヤ14を介して他方の配線パターン23と電気的に接続されている。なお、各配線パターン23,23は、絶縁性基材22aの外周形状の半分よりもやや小さな外周形状に形成されている。また、絶縁性基材22aの材料としては、FR4、FR5、紙フェノールなどを採用してもよい。   On the other hand, the wiring substrate 22 is provided with a pair of wiring patterns 23 and 23 for feeding power to the LED chip 10 on one surface side of an insulating base material 22a made of a polyimide film. A resist layer 26 made of a white resin covering a portion where the wiring patterns 23, 23 are not formed in the conductive base material 22a is laminated. Therefore, since the light emitted from the side surface of the LED chip 10 and incident on the surface of the resist layer 26 is reflected by the surface of the resist layer 26, the light emitted from the LED chip 10 is prevented from being absorbed by the wiring substrate 22. Thus, the light output can be improved by improving the light extraction efficiency to the outside. Here, in the LED chip 10, the cathode electrode is electrically connected to one wiring pattern 23 via the bonding wire 14, and the anode electrode is connected to the other via the electrode pattern 31 of the submount member 30 and the bonding wire 14. The wiring pattern 23 is electrically connected. Each of the wiring patterns 23 and 23 is formed in an outer peripheral shape slightly smaller than half of the outer peripheral shape of the insulating base material 22a. Further, FR4, FR5, paper phenol or the like may be employed as the material of the insulating base material 22a.

レジスト層26は、配線基板22の窓孔24の近傍において各配線パターン23,23の2箇所が露出し、配線基板22の周部において各配線パターン23,23の1箇所が露出するようにパターニングされており、各配線パターン23,23は、配線基板22の窓孔24近傍において露出した部位が、ボンディングワイヤ14が接続される端子部23aを構成し、配線基板22の周部において露出した円形状の部位が外部接続用の電極部23bを構成している。なお、配線基板22の配線パターン23,23は、Cu膜とNi膜とAu膜との積層膜により構成され、最上層がAu膜となっている。また、2つの電極部73bのうちLEDチップ10の上記アノード電極が電気的に接続される電極部23bには「+」の表示が形成され、LEDチップ10の上記カソード電極が電気的に接続される電極部23bには「−」の表示が形成されているので、発光装置1における両電極部23b,23bの極性を視認することができ、誤接続を防止することができる。   The resist layer 26 is patterned so that two portions of each wiring pattern 23, 23 are exposed in the vicinity of the window hole 24 of the wiring substrate 22 and one portion of each wiring pattern 23, 23 is exposed in the peripheral portion of the wiring substrate 22. In each wiring pattern 23, 23, a portion exposed in the vicinity of the window hole 24 of the wiring substrate 22 constitutes a terminal portion 23 a to which the bonding wire 14 is connected, and a circle exposed at the peripheral portion of the wiring substrate 22. The part of the shape constitutes an electrode part 23b for external connection. In addition, the wiring patterns 23 and 23 of the wiring board 22 are comprised by the laminated film of Cu film | membrane, Ni film | membrane, and Au film | membrane, and the uppermost layer is Au film | membrane. In addition, a sign “+” is formed on the electrode portion 23b of the two electrode portions 73b to which the anode electrode of the LED chip 10 is electrically connected, and the cathode electrode of the LED chip 10 is electrically connected. Since the display of “−” is formed on the electrode portion 23b, the polarities of both the electrode portions 23b and 23b in the light emitting device 1 can be visually recognized, and erroneous connection can be prevented.

また、サブマウント部材30は、熱伝導率が比較的高く且つ電気絶縁性を有するAlNにより形成されており、平面サイズをLEDチップ10のチップサイズよりも大きく設定してあり、伝熱板21とLEDチップ10との線膨張率差に起因してLEDチップ10に働く応力を緩和する応力緩和機能と、LEDチップ10で発生した熱を伝熱板21においてLEDチップ10のチップサイズよりも広い範囲に伝熱させる熱伝導機能とを有している。したがって、本実施形態の発光装置1では、LEDチップ10と伝熱板21との線膨張率差に起因してLEDチップ10に働く応力を緩和することができるとともに、LEDチップ10で発生した熱をサブマウント部材30および伝熱板21を介して効率良く放熱させることができる。   The submount member 30 is made of AlN having a relatively high thermal conductivity and electrical insulation, and has a planar size larger than the chip size of the LED chip 10. A stress relieving function that relieves stress acting on the LED chip 10 due to a difference in linear expansion coefficient with the LED chip 10, and heat generated in the LED chip 10 in a range wider than the chip size of the LED chip 10 in the heat transfer plate 21 It has a heat conduction function to transfer heat to the. Therefore, in the light emitting device 1 of the present embodiment, the stress acting on the LED chip 10 due to the difference in linear expansion coefficient between the LED chip 10 and the heat transfer plate 21 can be relieved, and the heat generated in the LED chip 10 can be reduced. Can be efficiently radiated through the submount member 30 and the heat transfer plate 21.

本実施形態では、サブマウント部材30の材料として熱伝導率が比較的高く且つ絶縁性を有するAlNを採用しているが、サブマウント部材30の材料はAlNに限らず、例えば、複合SiC、Siなどを採用してもよい。また、サブマウント部材30の一表面側には、LEDチップ10におけるサブマウント部材30側の電極である上記アノード電極と接合される上述の電極パターン31が形成され、当該電極パターン31の周囲にLEDチップ10の側面から放射された光を反射する反射膜32が形成されている。したがって、LEDチップ10の側面から放射された光がサブマウント部材30に吸収されるのを防止することができ、外部への光取出し効率をさらに高めることが可能となる。ここにおいて、電極パターン31は、Auを主成分とするAuとSnとの合金(例えば、80Au−20Sn、70Au−30Snなど)により形成されている。また、反射膜32は、Alにより形成されているが、Alに限らず、Ag,Ni,Auなどにより形成してもよい。   In the present embodiment, AlN having a relatively high thermal conductivity and insulating properties is adopted as the material of the submount member 30, but the material of the submount member 30 is not limited to AlN, for example, composite SiC, Si Etc. may be adopted. Further, the electrode pattern 31 is formed on one surface side of the submount member 30 to be joined to the anode electrode that is an electrode on the submount member 30 side of the LED chip 10, and the LED pattern 31 is surrounded by the LED pattern 31. A reflective film 32 that reflects light emitted from the side surface of the chip 10 is formed. Therefore, the light emitted from the side surface of the LED chip 10 can be prevented from being absorbed by the submount member 30, and the light extraction efficiency to the outside can be further increased. Here, the electrode pattern 31 is formed of an alloy of Au and Sn containing Au as a main component (for example, 80Au-20Sn, 70Au-30Sn, etc.). The reflective film 32 is made of Al, but is not limited to Al, and may be made of Ag, Ni, Au, or the like.

また、本実施形態の発光装置1では、サブマウント部材30の厚み寸法を、当該サブマウント部材30の表面が配線基板22のレジスト層26の表面よりも伝熱板21から離れるように設定してあり、LEDチップ10から側方に放射された光が配線基板22の窓孔24の内周面を通して配線基板22に吸収されるのを防止することができる。   In the light emitting device 1 of the present embodiment, the thickness dimension of the submount member 30 is set so that the surface of the submount member 30 is farther from the heat transfer plate 21 than the surface of the resist layer 26 of the wiring board 22. In addition, light emitted from the LED chip 10 to the side can be prevented from being absorbed by the wiring board 22 through the inner peripheral surface of the window hole 24 of the wiring board 22.

上述の封止部50の材料である封止樹脂としては、芳香族系官能基を含んでいないシリコーン樹脂を用いている。   As the sealing resin that is the material of the sealing portion 50 described above, a silicone resin that does not contain an aromatic functional group is used.

光学部材60は、透光性材料(例えば、シリコーン樹脂など)の成形品であってドーム状に形成されている。ここで、本実施形態では、光学部材60をシリコーン樹脂の成形品により構成しているので、光学部材60と封止部50との屈折率差および線膨張率差を小さくすることができる。   The optical member 60 is a molded product of a translucent material (for example, silicone resin) and is formed in a dome shape. Here, in this embodiment, since the optical member 60 is formed of a silicone resin molded product, the difference in refractive index and the linear expansion coefficient between the optical member 60 and the sealing portion 50 can be reduced.

ところで、光学部材60は、光出射面60bが、光入射面60aから入射した光を光出射面60bと上述の空気層80との境界で全反射させない凸曲面状に形成されており、LEDチップ10と光軸が一致するように配置されている。したがって、LEDチップ10から放射され光学部材60の光入射面60aに入射された光が光出射面60bと空気層80との境界で全反射されることなく色変換部材70まで到達しやすくなり、全光束を高めることができる。なお、LEDチップ10の側面から放射された光は封止部50および光学部材60および空気層80を伝搬して色変換部材70まで到達し色変換部材70の蛍光体を励起したり蛍光体には衝突せずに色変換部材70を透過したりする。また、光学部材60は、位置によらず法線方向に沿って肉厚が一様となるように形成されている。   By the way, the optical member 60 has a light emitting surface 60b formed in a convex curved surface shape that does not totally reflect the light incident from the light incident surface 60a at the boundary between the light emitting surface 60b and the air layer 80 described above. 10 and the optical axis coincide with each other. Therefore, the light emitted from the LED chip 10 and incident on the light incident surface 60a of the optical member 60 can easily reach the color conversion member 70 without being totally reflected at the boundary between the light emitting surface 60b and the air layer 80, The total luminous flux can be increased. The light emitted from the side surface of the LED chip 10 propagates through the sealing portion 50, the optical member 60, and the air layer 80 to reach the color conversion member 70 to excite the phosphor of the color conversion member 70 or to the phosphor. Passes through the color conversion member 70 without colliding. Further, the optical member 60 is formed so that the thickness is uniform along the normal direction regardless of the position.

色変換部材70は、シリコーン樹脂のような透光性材料とLEDチップ10から放射された青色光によって励起されてブロードな黄色系の光を放射する粒子状の黄色蛍光体とを混合した混合物の成形品により構成されている(つまり、色変換部材70は、蛍光体および透光性材料により形成されている)。したがって、本実施形態の発光装置1は、LEDチップ10から放射された青色光と黄色蛍光体から放射された光とが色変換部材70の外面70bを通して放射されることとなり、白色光を得ることができる。なお、色変換部材70の材料として用いる透光性材料は、シリコーン樹脂に限らず、例えば、エポキシ樹脂、アクリル樹脂、ガラス、有機成分と無機成分とがnmレベルもしくは分子レベルで混合、結合した有機・無機ハイブリッド材料などを採用してもよい。また、色変換部材70の材料として用いる透光性材料に混合する蛍光体も黄色蛍光体に限らず、例えば、赤色蛍光体と緑色蛍光体とを混合しても白色光を得ることができる。   The color conversion member 70 is a mixture of a translucent material such as a silicone resin and a particulate yellow phosphor that emits broad yellow light when excited by the blue light emitted from the LED chip 10. It is comprised by the molded article (that is, the color conversion member 70 is formed with the fluorescent substance and the translucent material). Therefore, in the light emitting device 1 of the present embodiment, the blue light emitted from the LED chip 10 and the light emitted from the yellow phosphor are emitted through the outer surface 70b of the color conversion member 70, and white light is obtained. Can do. The translucent material used as the material of the color conversion member 70 is not limited to a silicone resin, but, for example, an epoxy resin, an acrylic resin, glass, an organic material in which an organic component and an inorganic component are mixed and bonded at the nm level or the molecular level. -Inorganic hybrid materials may be used. Further, the phosphor mixed with the translucent material used as the material of the color conversion member 70 is not limited to the yellow phosphor. For example, white light can be obtained by mixing a red phosphor and a green phosphor.

ここで、色変換部材70は、内面70aが光学部材60の光出射面60bに沿った形状に形成されている。したがって、光学部材60の光出射面60bの位置によらず法線方向における光出射面60bと色変換部材70の内面70aとの間の距離が略一定値となっている。なお、色変換部材70は、位置によらず法線方向に沿った肉厚が一様となるように成形されている。また、色変換部材70は、実装基板20側の端縁(開口部の周縁)を実装基板20に対して、例えば接着剤(例えば、シリコーン樹脂、エポキシ樹脂など)を用いて固着すればよい。   Here, the color conversion member 70 has an inner surface 70 a formed along the light emitting surface 60 b of the optical member 60. Therefore, the distance between the light emitting surface 60b and the inner surface 70a of the color conversion member 70 in the normal direction is a substantially constant value regardless of the position of the light emitting surface 60b of the optical member 60. In addition, the color conversion member 70 is shape | molded so that the thickness along a normal line direction may become uniform irrespective of a position. In addition, the color conversion member 70 may be fixed to the mounting substrate 20 with an end edge (periphery of the opening) on the mounting substrate 20 side using, for example, an adhesive (for example, silicone resin, epoxy resin).

上述の発光装置1の製造方法にあたっては、例えば、LEDチップ10と各配線パターン23,23とをそれぞれボンディングワイヤ14,14を介して電気的に接続した後、封止樹脂注入用のディスペンサのノズルの先端部を配線基板22の窓孔24に連続して形成されている樹脂注入孔28(図3参照)に合わせてサブマウント部材30と配線基板22との隙間に封止部50の一部の基礎となる液状のシリコーン樹脂を注入してから硬化させ、その後、ドーム状の光学部材60の内側に上述の封止部50の残りの部分の基礎となる液状のシリコーン樹脂を注入してから、光学部材60を実装基板20における所定位置に配置してシリコーン樹脂を硬化させることによりゲル状の封止部50を形成するのと同時に光学部材60を実装基板20に固着し、その後、色変換部材70を実装基板20に固着するような製造方法が考えられるが、このような製造方法でも、製造過程において封止部50に気泡(ボイド)が発生する恐れがあるので、光学部材60に液状のシリコーン樹脂を多めに注入する必要がある。   In the method of manufacturing the light emitting device 1 described above, for example, after the LED chip 10 and the wiring patterns 23 and 23 are electrically connected through the bonding wires 14 and 14, respectively, the nozzle of the dispenser for sealing resin injection A part of the sealing portion 50 is inserted in the gap between the submount member 30 and the wiring board 22 so that the tip of the wiring board 22 is aligned with the resin injection hole 28 (see FIG. 3) formed continuously to the window hole 24 of the wiring board 22. After injecting the liquid silicone resin that is the basis of the liquid, the resin is cured. After that, the liquid silicone resin that is the basis of the remaining portion of the sealing portion 50 is injected into the inside of the dome-shaped optical member 60. The optical member 60 is disposed at a predetermined position on the mounting substrate 20 and the silicone resin is cured to form the gel-like sealing portion 50. At the same time, the optical member 60 is mounted on the mounting substrate 2. A manufacturing method in which the color conversion member 70 is fixed to the mounting substrate 20 and then the color conversion member 70 may be considered. However, even with such a manufacturing method, there is a possibility that bubbles (voids) may be generated in the sealing portion 50 in the manufacturing process. Therefore, it is necessary to inject a large amount of liquid silicone resin into the optical member 60.

しかしながら、このような製造方法を採用した場合、光学部材60を実装基板20における上記所定位置に配置する際に液状のシリコーン樹脂の一部が光学部材60と実装基板20とで囲まれる空間から溢れ出てレジスト層76の表面上に広がってしまい、当該溢れ出たシリコーン樹脂からなる不要部での光吸収や当該不要部の凹凸に起因した光の乱反射などにより、発光装置1全体としての光取り出し効率が低下してしまうことが考えられる。   However, when such a manufacturing method is adopted, a part of the liquid silicone resin overflows from a space surrounded by the optical member 60 and the mounting substrate 20 when the optical member 60 is disposed at the predetermined position on the mounting substrate 20. The light emitting device 1 as a whole due to light absorption at an unnecessary portion made of the overflowed silicone resin, diffused reflection of light caused by unevenness of the unnecessary portion, etc. It is conceivable that the efficiency decreases.

そこで、本実施形態の発光装置1では、実装基板20の上記一表面において光学部材60のリング状の端縁に重なる部位と色変換部材70のリング状の端縁に重なる部位との間に、光学部材60と実装基板20とで囲まれる空間から溢れ出たシリコーン樹脂を溜める複数の樹脂溜め用穴27を光学部材60の外周方向に離間して形成してある。ここで、樹脂溜め用穴27は、配線基板22に形成した貫通孔27aと伝熱板21において貫通孔27aに対応する部位に形成された凹部27bとで構成されており、配線基板22の厚みを薄くしても樹脂溜め用穴27の深さ寸法を大きくできて、樹脂溜め用穴27に溜めることが可能なシリコーン樹脂の量を多くすることができ、しかも、樹脂溜め用穴27内で硬化したシリコーン樹脂がLEDチップ10から色変換部材70への熱伝達を阻止する断熱部として機能することとなり、LEDチップ10の発熱に伴う色変換部材70の温度上昇を抑制できるから、LEDチップ10の発熱に起因した蛍光体の発光効率の低下を抑制することができる。   Therefore, in the light emitting device 1 of the present embodiment, between the portion overlapping the ring-shaped end edge of the optical member 60 and the portion overlapping the ring-shaped end edge of the color conversion member 70 on the one surface of the mounting substrate 20, A plurality of resin reservoir holes 27 for storing the silicone resin overflowing from the space surrounded by the optical member 60 and the mounting substrate 20 are formed apart from each other in the outer peripheral direction of the optical member 60. Here, the resin reservoir hole 27 includes a through hole 27 a formed in the wiring substrate 22 and a recess 27 b formed in a portion corresponding to the through hole 27 a in the heat transfer plate 21, and the thickness of the wiring substrate 22. Even if the thickness of the resin reservoir 27 is reduced, the depth of the resin reservoir hole 27 can be increased, and the amount of silicone resin that can be stored in the resin reservoir hole 27 can be increased. Since the cured silicone resin functions as a heat insulating portion that prevents heat transfer from the LED chip 10 to the color conversion member 70, the temperature increase of the color conversion member 70 due to heat generation of the LED chip 10 can be suppressed. It is possible to suppress a decrease in luminous efficiency of the phosphor due to the heat generation.

また、本実施形態の発光装置1は、実装基板20の上記一表面側において光学部材60のリング状の端縁に重なる部位と色変換部材70のリング状の端縁と重なる部位との間に配置されて各樹脂溜め用穴27を覆うリング状の光吸収防止用基板40を備えており、各樹脂溜め用穴27内に溜まって硬化した封止樹脂からなる樹脂部による光吸収を、光吸収防止用基板40によって防止することができる。ここにおいて、光吸収防止用基板40は、実装基板20側とは反対の表面側にLEDチップ10や色変換部材70などからの光を反射する白色系のレジスト層が設けられているので、上記光の吸収を防止することができる。なお、光吸収防止用基板40は、光学部材60を実装基板20における所定位置に配置する際に溢れ出た封止樹脂が各樹脂溜め用穴27内に充填された後で、実装基板20の上記一表面側に載置すればよく、その後でシリコーン樹脂を硬化させる際にシリコーン樹脂により実装基板20に固着されることとなる。ここで、リング状の光吸収防止用基板40には、各樹脂溜め用穴27の微小領域を露出させる複数の切欠部42が形成されており、樹脂溜め用穴27内のシリコーン樹脂を硬化させる際にボイドが発生するのを防止することができる。   Further, in the light emitting device 1 of the present embodiment, the one surface side of the mounting substrate 20 is between the portion overlapping the ring-shaped end edge of the optical member 60 and the portion overlapping the ring-shaped end edge of the color conversion member 70. A ring-shaped light absorption preventing substrate 40 that is disposed and covers each resin reservoir hole 27 is provided, and light absorption by a resin portion made of a sealing resin that has accumulated and cured in each resin reservoir hole 27 This can be prevented by the absorption preventing substrate 40. Here, the light absorption preventing substrate 40 is provided with a white resist layer that reflects light from the LED chip 10 and the color conversion member 70 on the surface side opposite to the mounting substrate 20 side. Light absorption can be prevented. The light absorption preventing substrate 40 is filled with the sealing resin overflowing when the optical member 60 is arranged at a predetermined position on the mounting substrate 20 in each resin reservoir hole 27, and What is necessary is just to mount on the said one surface side, and when hardening a silicone resin after that, it will adhere to the mounting board | substrate 20 with a silicone resin. Here, the ring-shaped light absorption preventing substrate 40 is formed with a plurality of notches 42 for exposing the minute regions of the resin reservoir holes 27, and the silicone resin in the resin reservoir holes 27 is cured. It is possible to prevent the occurrence of voids.

以上説明した本実施形態の発光装置1では、上述のようにLEDチップ10で発生した熱をサブマウント部材30および伝熱板21を介して放熱させることができるので、図5に示した従来例と同様に放熱性を高めることができ、LEDチップ10のジャンクション温度の温度上昇を抑制できるから、入力電力を大きくでき、光出力の高出力化を図れる。   In the light emitting device 1 of the present embodiment described above, the heat generated in the LED chip 10 can be radiated through the submount member 30 and the heat transfer plate 21 as described above, so the conventional example shown in FIG. The heat dissipation can be improved in the same manner as described above, and the temperature rise of the junction temperature of the LED chip 10 can be suppressed, so that the input power can be increased and the light output can be increased.

ところで、封止部50が分子構造中に芳香族系官能基を含んでいるシリコーン樹脂からなる封止樹脂により形成されている場合には、封止樹脂が分解すると芳香族系官能基により可視光が吸収されるので封止部50の着色が起こりやすくなる一方で、LEDチップ10の光取り出し面側へ拡散移動したAlにより封止樹脂の分解が促進されるので、封止部50の黒色化が起こりやすくなるが、本実施形態の発光装置1では、パッケージの所定部位に実装されたLEDチップ10を封止した封止部50が芳香族系官能基を含んでいないシリコーン樹脂からなる封止樹脂により形成されていることにより、封止樹脂が分解されただけでは可視光の吸収が起こらないので、封止部50の黒色化が起こりにくくなり、長期信頼性の向上を図れる。   By the way, when the sealing part 50 is formed by a sealing resin made of a silicone resin containing an aromatic functional group in the molecular structure, when the sealing resin is decomposed, the aromatic functional group causes visible light. Is absorbed, so that the sealing portion 50 is likely to be colored. On the other hand, since the decomposition of the sealing resin is promoted by Al diffused and moved to the light extraction surface side of the LED chip 10, the sealing portion 50 is blackened. However, in the light emitting device 1 of the present embodiment, the sealing portion 50 that seals the LED chip 10 mounted on a predetermined portion of the package is made of a silicone resin that does not contain an aromatic functional group. Since the resin is formed, visible light absorption does not occur just by disassembling the sealing resin. Therefore, blackening of the sealing portion 50 hardly occurs, and long-term reliability can be improved.

なお、上述の実施形態では、LEDチップ10として一表面側にアノード電極が形成されるとともに他表面側にカソード電極が形成されたものを採用しているが、LEDチップ10の構造や実装形態は特に限定するものではなく、アノード電極が形成された一表面側を光取り出し面側とすることが可能なLEDチップを採用してもよいし、同一面側にアノード電極およびカソード電極が形成されたものを採用してもよい。また、LEDチップ10の発光色は青色に限らず、例えば、赤色、緑色などでもよい。すなわち、LEDチップ10の発光部の材料はGaN系化合物半導体材料に限らず、LEDチップ10の発光色に応じて、例えば、GaAs系化合物半導体材料やGaP系化合物半導体材料などを採用してもよい。また、LEDチップ10と実装基板20との線膨張率の差が比較的小さい場合には上述の実施形態で説明したサブマウント部材30は必ずしも設ける必要はない。   In the above-described embodiment, the LED chip 10 having an anode electrode formed on one surface side and a cathode electrode formed on the other surface side is employed. However, the structure and mounting form of the LED chip 10 are as follows. There is no particular limitation, and an LED chip capable of setting the one surface side on which the anode electrode is formed as the light extraction surface side may be employed, or the anode electrode and the cathode electrode are formed on the same surface side. A thing may be adopted. Further, the light emission color of the LED chip 10 is not limited to blue, and may be, for example, red or green. That is, the material of the light emitting portion of the LED chip 10 is not limited to the GaN-based compound semiconductor material, and for example, a GaAs-based compound semiconductor material or a GaP-based compound semiconductor material may be employed according to the emission color of the LED chip 10. . In addition, when the difference in linear expansion coefficient between the LED chip 10 and the mounting substrate 20 is relatively small, the submount member 30 described in the above embodiment is not necessarily provided.

また、上述の実施形態の発光装置1では、LEDチップ10としてチップサイズが1mm□のものを用いサブマウント部材30上に1個のLEDチップ10を配置しているが、LEDチップ10のチップサイズや数は特に限定するものではなく、例えば、LEDチップ10としてチップサイズが0.3mm□のものを採用するようにして、1個のサブマウント部材30上に複数個のLEDチップ10を配置し、これら複数個のLEDチップ10を電極パターン31およびボンディングワイヤを介して直列接続するようにしてもよい   In the light emitting device 1 of the above-described embodiment, the LED chip 10 having a chip size of 1 mm □ is used and one LED chip 10 is disposed on the submount member 30. However, the chip size of the LED chip 10 is not limited. The number of LED chips 10 is not particularly limited. For example, a plurality of LED chips 10 are arranged on one submount member 30 by adopting an LED chip 10 having a chip size of 0.3 mm □. The plurality of LED chips 10 may be connected in series via the electrode pattern 31 and bonding wires.

実施形態を示す発光装置の概略断面図である。It is a schematic sectional drawing of the light-emitting device which shows embodiment. 同上の発光装置を用いた照明器具の要部概略分解斜視図である。It is a principal part schematic disassembled perspective view of the lighting fixture using the light-emitting device same as the above. 同上の発光装置の概略分解斜視図である。It is a general | schematic disassembled perspective view of a light-emitting device same as the above. 同上の発光装置におけるサブマウント部材の概略斜視図である。It is a schematic perspective view of the submount member in the light emitting device same as above. 従来例を示す概略断面図である。It is a schematic sectional drawing which shows a prior art example. 封止部が黒色化した発光装置の写真をカラー印刷したものである。This is a color print of a photograph of a light emitting device with a blackened sealing part.

符号の説明Explanation of symbols

1 発光装置
10 LEDチップ
14 ボンディングワイヤ
20 実装基板
21 伝熱板
22 配線基板
23 配線パターン
30 サブマウント部材
31 電極パターン
32 反射膜
50 封止部
60 光学部材
70 色変換部材
DESCRIPTION OF SYMBOLS 1 Light-emitting device 10 LED chip 14 Bonding wire 20 Mounting board 21 Heat-transfer board 22 Wiring board 23 Wiring pattern 30 Submount member 31 Electrode pattern 32 Reflective film 50 Sealing part 60 Optical member 70 Color conversion member

Claims (1)

可視光を放射するLEDチップと、LEDチップ用のパッケージと、当該パッケージの所定部位に実装されたLEDチップを封止した封止部とを備え、当該封止部は、分子構造中に芳香族系官能基を含んでいないシリコーン樹脂からなる封止樹脂により形成されてなることを特徴とする発光装置。   An LED chip that emits visible light, a package for the LED chip, and a sealing portion that seals the LED chip mounted on a predetermined portion of the package, the sealing portion being aromatic in the molecular structure A light emitting device comprising a sealing resin made of a silicone resin not containing a functional group.
JP2006294899A 2006-10-30 2006-10-30 Light-emitting device Pending JP2008112864A (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005071039A1 (en) * 2004-01-26 2005-08-04 Kyocera Corporation Wavelength converter, light-emitting device, wavelength converter manufacturing method, and light-emitting device manufacturing method
WO2006067885A1 (en) * 2004-12-24 2006-06-29 Kyocera Corporation Light-emitting device and illuminating device
JP2007314626A (en) * 2006-05-24 2007-12-06 Mitsubishi Chemicals Corp Phosphor-containing composition, light emitting device, illuminating device and image display

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005071039A1 (en) * 2004-01-26 2005-08-04 Kyocera Corporation Wavelength converter, light-emitting device, wavelength converter manufacturing method, and light-emitting device manufacturing method
WO2006067885A1 (en) * 2004-12-24 2006-06-29 Kyocera Corporation Light-emitting device and illuminating device
JP2007314626A (en) * 2006-05-24 2007-12-06 Mitsubishi Chemicals Corp Phosphor-containing composition, light emitting device, illuminating device and image display

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