JP2008107794A - Electrooptic device and inspection method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electrooptic device and an inspection method for detecting secular change in resolution and the like of devices used for manufacture of the electrooptic device such as an exposure device used by a photolithographic method. <P>SOLUTION: The electrooptic device is provided with a plurality of pairs of electrodes (51a to 51f) in each of which first and second electrodes are disposed in parallel and in which intervals between the first and the second electrodes are different for each pair of the electrodes, a common terminal 53, a plurality of discrete terminals 55a to 55f, first wiring 52a to 52f for connecting one electrodes of the plurality of pairs of electrodes to the common terminal and second wiring 54a to 54f for connecting the other electrodes of the plurality of pairs of electrodes to the plurality of discrete terminals. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

The present invention relates to an electro-optical device and an inspection method provided with an inspection pattern for monitoring a change in time such as resolution of an apparatus used for manufacturing an electro-optical device such as an exposure device used in a photolithography method.

A substrate of an electro-optical device such as a liquid crystal display device is generally manufactured by a photolithography method. In this photolithography method, a photoresist is applied to the surface of a semiconductor film, a metal film or an insulating film formed on a substrate, and the photoresist is exposed using a photomask and an exposure apparatus in which a predetermined pattern is formed. Thereafter, development is performed to form a photoresist with a predetermined pattern, and further, a portion of the semiconductor film, metal film or insulating film not covered with the photoresist is etched to thereby etch a semiconductor film, metal film or insulating film with a predetermined pattern. This is a method of forming a film.

This photolithography method is used in various manufacturing processes of the electro-optical device substrate. However, the deterioration of the resolution of the exposure apparatus used in this photolithography method is caused by the variation or failure of the manufactured electro-optical device substrate. Manufacturing process management is necessary. However, the management of the deterioration of the resolution of the exposure apparatus up to the present is statistically grasping the tendency of the deterioration of the resolution of the exposure apparatus by inspecting the manufactured product, or performing the performance in the maintenance of the exposure apparatus. It is only performed by checking, and it has not been practically performed to automatically detect a sign of deterioration in resolution of the exposure apparatus or a sign of occurrence of an abnormality during the manufacturing process.

For example, the following Patent Document 1 relates to an invention of a method for manufacturing a semiconductor integrated circuit device and a method for manufacturing a photomask, for measuring an arrangement position of a pattern in the pattern formation region in the pattern formation region of the photomask. A plurality of position measurement patterns are arranged in a dispersed manner, and a predetermined pattern is transferred onto the main surface of the semiconductor wafer by using this photomask, and then the arrangement position of the pattern is measured to increase the overlay accuracy of the integrated circuit pattern. Although what has been improved is disclosed, there is no description that suggests detecting a change in the resolution of the exposure apparatus.

Patent Document 2 below relates to an invention of a thin film transistor evaluation method or a manufacturing method, and a T manufactured simultaneously with a TFT without observing with a SEM (scanning electron microscope) or the like.
An apparatus for evaluating alignment deviation of a mask for manufacturing a semiconductor element by measuring electrical characteristics of an EG (single element group for evaluation) has been disclosed, but suggests that a change in resolution of an exposure apparatus is detected. There is no description to do.
JP 2001-201844 A (claims, paragraphs [0045] to [0048], FIGS. 4 and 5) JP 2004-214638 A (Claims, paragraphs [0013] to [0021], FIG. 1)

As described above, in the past, the trend of exposure apparatus resolution degradation and signs of abnormality occurring were not automatically captured during the manufacturing process of the liquid crystal display device. However, there has been a problem that a liquid crystal display device that is not in conformity with the standard is manufactured, resulting in great confusion in the manufacturing process of the liquid crystal display device. This is the same not only when a pattern is formed using an exposure apparatus but also when a pattern is formed by an inkjet method or a printing method.

The present invention has been made to solve such problems of the prior art, and a first object of the present invention is to measure changes in the time and the like of the resolution of an apparatus used for manufacturing an electro-optical apparatus such as an exposure apparatus. An object of the present invention is to provide an electro-optical device having an inspection pattern for inspecting the resolution of an exposure apparatus or the like that can monitor and detect a sign that an abnormality has occurred.

A second object of the present invention is to automatically detect a change in time such as the resolution of an apparatus used for manufacturing an electro-optical device, such as an exposure device, using a substrate having the inspection pattern. It is to provide an inspection method that can be used.

In order to achieve the first object, an electro-optical device according to the present invention is an electrode pair in which a first electrode and a second electrode are arranged in parallel, and an interval between the first electrode and the second electrode is the electrode. A plurality of pairs of electrode pairs different for each pair; and
A common terminal pattern;
A plurality of individual terminal patterns;
A first for connecting between one electrode of the plurality of electrode pairs and the common terminal
A wiring pattern;
A second wiring pattern for connecting between the other electrode of each of the plurality of electrode pairs and the plurality of individual terminals is provided.

In the electro-optical device according to the aspect of the invention, the electrode pair may include the first electrode and the second electrode.
Each of the electrodes has a comb-tooth shape, and is a comb-like electrode pair in which the comb-tooth portions are spaced apart from each other.

In the electro-optical device according to the aspect of the invention, each of the electrode pairs may be formed to intersect the conductive pattern via an insulating film provided on the conductive pattern. .

In the electro-optical device according to the aspect of the invention, each of the electrode pairs may be formed so as to intersect the conductive pattern and the semiconductor layer through an insulating film and a semiconductor layer provided on the conductive pattern. It is characterized by being.

According to the present invention, in the electro-optical device, the electrode pair is disposed such that the first and second electrodes meander.

In the electro-optical device, the first pattern formed simultaneously with the conductive pattern, the insulating film stacked on the first pattern, and the semiconductor layer may be formed simultaneously with the first pattern. A second pattern formed on the insulating film so as to overlap one pattern, a metal pattern formed simultaneously with the electrode pair and arranged to traverse the second pattern a plurality of times, and the metal It has the terminal arrange | positioned at the both ends of a pattern, It is characterized by the above-mentioned.

According to the present invention, in the electro-optical device, the conductive third electrode, the insulating film stacked on the third electrode, and the third electrode are formed on the insulating film so that at least one portion overlaps the third electrode. A conductive fourth electrode formed; a terminal disposed at one end of the third electrode; and a terminal disposed at one end of the fourth electrode, wherein one of the third electrode and the fourth electrode The electrode is formed simultaneously with the electrode pair.

Furthermore, in order to achieve the second object, the inspection method of the present invention uses any one of the electro-optical devices of the present invention to detect the presence or absence of a short circuit between the common electrode and the plurality of individual terminals. Thus, the pattern resolution is detected.

The present invention provides the following excellent effects by having the above configuration. That is, according to the electro-optical device of the present invention, various wiring patterns (hereinafter, referred to as inspection patterns) are formed, thereby measuring the resolution of the device used for manufacturing the electro-optical device such as an exposure device. Since it is possible to detect the change, it becomes possible to know the tendency of the deterioration of the resolution of the exposure apparatus as appropriate when, for example, a liquid crystal display device or the like is manufactured by the photolithography method. For example, when the above-described inspection pattern is formed on the array substrate of the liquid crystal display device, since various wirings for driving the liquid crystal are provided on the array substrate, the inspection pattern is simultaneously formed when these wirings are formed. Since it can be formed, an increase in the number of manufacturing steps can be suppressed.

According to the electro-optical device of the invention, the first electrode and the second electrode are electrode pairs arranged in parallel, and the distance between the first electrode and the second electrode is different for each electrode pair. A plurality of electrode pair patterns, a common terminal pattern, a plurality of individual terminal patterns, and a first wiring pattern for connecting between one electrode of the plurality of sets of electrode pairs and the common terminal And a second wiring pattern for connecting between the other electrode of each of the plurality of electrode pairs and the plurality of individual terminals, a common pattern is provided. By detecting the presence or absence of a short circuit between a terminal and a plurality of individual terminals, it is possible to automatically evaluate the resolution of a pattern produced by an exposure apparatus, etc. Pattern resolution It becomes possible to monitor the change.

In other words, since the comb-tooth electrode pairs of the plurality of pairs have different comb tooth intervals for each comb-tooth electrode pair, this interval is close to the resolution at which maintenance of the exposure apparatus or the like is required. If it is determined in a plurality of stages, a short circuit occurs in order from the comb-like electrode pair having the narrowest interval as the resolution of the exposure apparatus or the like progresses. Therefore, it can be seen that there is no deterioration in the pattern resolution unless all the comb-like electrode pairs are short-circuited,
Since the degree of deterioration of the resolution of the exposure apparatus can be understood from the pair of comb-like electrodes that are short-circuited, maintenance of the exposure apparatus and the like is further performed by tracking the variation of the pair of comb-like electrodes that are short-circuited over time. Can predict when is needed. For this reason, a series of manufacturing processes such as manufacturing a large amount of non-standard products due to sudden deterioration of an exposure apparatus or the like as in the conventional example are not caused.

In addition, according to the electro-optical device of the present invention, a substrate on which various circuits are formed using an exposure device or the like, for example, a substrate used in a liquid crystal display device has a multi-layer structure in which a conductive member, a semiconductor member, etc. are interposed via an insulating film Furthermore, the resolution accuracy differs between patterning a layer formed on a flat surface and patterning a layer formed on a stepped surface.
It becomes possible to evaluate the resolution of an exposure apparatus or the like under conditions closer to the product structure.

Further, according to the electro-optical device of the present invention, various circuits are formed using an exposure device or the like. For example, a substrate used in a liquid crystal display device is often provided with a thin film transistor (TFT). In general, it has a configuration in which a semiconductor layer is formed on a gate electrode through an insulating film, so that an exposure apparatus or the like under conditions close to the structure of a product, that is, a liquid crystal display device or the like having such a TFT is provided. The resolution can be evaluated.

According to the electro-optical device of the present invention, the first and second electrodes extend in a plurality of directions by arranging the first and second electrodes so as to meander. This makes it possible to confirm the dependence of the exposure apparatus on the exposure direction when patterning the inspection pattern on the substrate with an exposure apparatus or the like. That is, the resolution of the exposure apparatus can be evaluated without being influenced by the dependency of the exposure direction.

In addition, according to the electro-optical device of the present invention, it is possible to confirm whether or not various wirings formed on the substrate may be broken by confirming the conductive state of the metal pattern. In other words, the metal pattern is arranged so as to cross the first pattern and the second pattern, and by intentionally forming it so as to cross the stepped portion, it is likely to cause disconnection even in the wiring formed on the substrate. It is formed with. Therefore, if this metal pattern is disconnected, there is a high possibility that other wiring on the substrate is also disconnected, and inspection can be performed efficiently.

In addition, according to the electro-optical device of the present invention, since the third electrode and the fourth electrode are arranged so as to overlap at least partially via the insulating film, it is possible to detect a breakdown failure. The adhesion between the formation film of various wirings and the resist material varies depending on the irradiation conditions of the exposure machine. If the adhesion between the formed film and the resist material becomes too high, the etching solution does not penetrate and the side surface of the formed film becomes an inversely tapered shape. When two conductive layers are stacked via an insulating film, if the lower conductive layer has a reverse taper shape, the insulating film on the conductive layer cannot be formed neatly,
It becomes easy to cause a dielectric breakdown defect with the upper conductive layer. In the present invention, it is possible to confirm whether or not a dielectric breakdown failure is likely to occur by forming a test electrode having a structure in which such a breakdown failure is likely to occur, and confirming a conduction state between the electrodes. When a short circuit has occurred between the four electrodes, it can be understood that there is a high possibility that the same breakdown failure has occurred in the components on the panel.

Further, according to the inspection method of the present invention, the resolution of the exposure apparatus can be easily and automatically evaluated simply by bringing the detection probe into contact with the common electrode and the plurality of individual terminals.

Hereinafter, the best mode for carrying out the electro-optical device and the inspection method of the present invention will be described in detail with reference to the drawings, taking the case of a liquid crystal display device as an example. The present invention is not intended to be limited to what has been described above, and the present invention can be equally applied to various changes made without departing from the technical idea described in the claims.

1 is a schematic plan view of a liquid crystal display device according to the present invention, FIG. 2 is a schematic cross-sectional view taken along line II-II in FIG. 1, and FIG. 3 is a color filter of the liquid crystal display device in FIG. FIG. 4 is a schematic plan view of one pixel shown through the substrate, and FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 5 and 6 are cross-sectional views illustrating the manufacturing process for one pixel of the liquid crystal display device of FIG. 1 in order. 5 and 6 both show a cross-sectional state taken along line IV-IV in FIG.

The liquid crystal display device 10 includes an array substrate AR and a color filter substrate CF. In the first substrate 11 made of a transparent substrate such as glass of the array substrate AR, scanning lines and signal lines are formed in a matrix in the display region 12, and pixel electrodes are formed in portions surrounded by the scanning lines and the signal lines. A thin film transistor as a switching element connected to the pixel electrode is formed in the vicinity of the intersection of the scanning line and the signal line. Specific configurations of these wirings, thin film transistors, and pixel electrodes will be described later in detail, but these are schematically shown in FIG.
It is shown as 3.

A driver IC 14 for driving the liquid crystal display device 10 is provided on the short side portion of the first substrate 11.
Is arranged. In the case of a medium-sized or large-sized liquid crystal display device, the driver IC 14 may be separately mounted on a flexible wiring board or the like and electrically connected to the first substrate 11.
A plurality (four in FIG. 1) of transfer electrodes 15 are provided at the corners of the first substrate 11. The transfer electrode 15 is formed in the same process as that for forming the scanning line and the like, and is made of the same material as the scanning line. The transfer electrodes 15 are directly connected to each other via a common line 16 or connected to each other in the driver IC 14 so as to have the same potential. Further, the scanning line is connected to the gate wiring 17, the signal line is connected to the source wiring 18,
By these gate wiring 17 and source wiring 18, the scanning line and the signal line are driver IC1.
4 is electrically connected.

Although FIG. 1 shows an example in which the gate wiring 17 is arranged on the long side of the first substrate 11 and the source wiring 18 is arranged on the short side of the first substrate 11, this arrangement may be reversed. In addition, the driver IC 14 may be disposed on the long side instead of being disposed only on the short side.

In the color filter substrate CF, a color filter layer and a black matrix are formed on the second substrate 20 made of a transparent substrate such as glass. The color filter layer is the first substrate 1
A filter layer corresponding to each pixel is provided so as to face one pixel electrode, and the black matrix is disposed at a position corresponding to at least a scanning line or a signal line of the first substrate 11. Although specific configurations of these color filter layers and the like are omitted, these are schematically shown as the second structure 21 in FIG. Further, a counter electrode 22 made of a transparent electrode made of indium oxide, tin oxide or the like is further formed on the second substrate 20 over at least the entire display region 12.

The sealing material 23 is applied around the display area 12 of the first substrate 11 except for a liquid crystal injection port (not shown), and a contact material (not shown) is applied on the transfer electrode 15 to counter the electrode. 22 is electrically connected. The sealing material 23 is obtained by mixing fillers of insulating particles in a thermosetting resin such as an epoxy resin, and the contact material is obtained by mixing granular conductors in the same resin as the sealing material. A liquid crystal 24 is sealed between the substrates.

In the liquid crystal display device 10, a portion of the array substrate AR where various wirings outside the display region 12 on the first substrate 11 are not provided (a portion surrounded by a broken-line circle on the lower left side in FIG. 1).
Further, a resolution inspection pattern of the exposure apparatus of the present invention is formed. The resolution inspection pattern of this exposure apparatus will be described in detail later.

Here, a specific configuration of one pixel of the array substrate AR of the liquid crystal display device 10 will be described with reference to FIGS. In the display area 12 (see FIG. 1) of the array substrate AR of the liquid crystal display device 10, a plurality of scanning lines 31 and signal lines 32 formed in a matrix are provided between the plurality of scanning lines 31. A plurality of auxiliary capacitance lines 33 and auxiliary capacitance electrodes 33a parallel to the scanning line 31, a thin film transistor TFT comprising a source electrode S, a gate electrode G, a drain electrode D, and a semiconductor layer 34; a scanning line 31 and a signal; Pixel electrode 3 covering the area surrounded by the line 32
5 are provided. The semiconductor layer 34 of the TFT is usually polysilicon (p−
Si) or amorphous silicon (a-Si) or the like is used.

Here, the configuration of the array substrate AR of the liquid crystal display device 10 described above will be described with reference to FIGS. 5 and 6 showing the manufacturing process of the array substrate AR in order. First, as shown in FIG. 5A,
A conductive material layer 36 made of aluminum, molybdenum, chromium, or an alloy thereof having a predetermined thickness is formed on the transparent substrate 11. Then, as shown in FIG. 5B, by patterning using a well-known photolithography method, a part of the pattern is removed by etching, and a plurality of scanning lines 31 extending in the horizontal direction and the plurality of scanning lines 31 are formed. The auxiliary capacitance line 33 between them, the gate electrode G extending from the scanning line 31, and the auxiliary capacitance line 33 are formed by widening a part of the auxiliary capacitance line 33, and the display region 12 of the liquid crystal display device 10 is formed. At least a gate wiring 17 (see FIG. 1) is formed around the periphery. In FIG. 5B, only the gate electrode G and the auxiliary capacitance electrode 33a are shown.

Next, an insulating film 37 of a first layer having a predetermined thickness is formed so as to cover the transparent substrate 11 on which the scanning lines 31 and the auxiliary capacitance lines 33 are formed by the above process. As the first insulating film 37, a transparent inorganic insulator made of silicon nitride or the like is used. Then, as shown in FIG.
Only a portion of the first insulating film 37 located on the auxiliary capacitance electrode 33a is removed by etching by photolithography.

In addition, after the above process is completed, as shown in FIG.
A second insulating film 38 having a thickness thinner than that of the insulating film 37 is formed. This second insulating film 3
8 is formed on the first-layer insulating film 37 and the auxiliary capacitance electrode 33a from which the first-layer insulating film 37 has been removed by the above-described etching. Therefore, the scanning line 31 and the gate electrode G are formed on the first layer. The gate insulating film is composed of both the insulating film 37 of the eye and the insulating film 38 of the second layer, and the two-layer film. Since the auxiliary capacitance electrode 33a is covered only by the second-layer insulating film 38, the auxiliary capacitance becomes extremely large. The material of the second-layer insulating film 38 is made of silicon nitride or silicon oxide.

Next, as shown in FIG. 5F, a silicon layer, for example, aS, is formed on the second insulating film 38.
i is deposited. Then, as shown in FIG. 5G, the a-Si layer is removed by etching, leaving a portion covering the gate electrode G by photolithography, thereby forming a semiconductor layer 34 that becomes a part of the TFT. 6A, a conductive material is deposited on the transparent substrate 11, and a plurality of signal lines 32 extending in a direction perpendicular to the scanning lines 31 are formed by photolithography from the signal lines 32. A source electrode S extending and connected to the semiconductor layer 34;
Then, the drain electrode D that covers the auxiliary capacitance electrode 33a and whose one end is connected to the semiconductor layer 34 is patterned. As a result, a TFT serving as a switching element is formed near the intersection of the scanning line 31 and the signal line 32 of the transparent substrate 11. At this time, the source wiring 17 (see FIG. 1) is also formed around the display region 12 at the same time.

Further, as shown in FIG. 6B, a protective insulating film 39 made of an inorganic insulating material for stabilizing the surface is formed on the transparent substrate 11 so as to cover these various wirings, and subsequently, FIG. As shown, an interlayer film 40 made of an organic insulating material for planarizing the surface of the array substrate AR is formed. Then, the auxiliary capacitance electrode 33a of the interlayer film 40 is formed by photolithography.
A hole for forming a contact hole 41 for electrically connecting a pixel electrode 35 and a drain electrode D, which will be described later, is provided in an upper portion, and an interlayer film 40 is formed as shown in FIG. 6D.
The protective insulating film 39 made of an inorganic insulating material exposed from the hole formed in is removed. Next, after forming a transparent conductive film made of ITO (Indium Tin Oxide) on the entire surface, FIG.
As shown in E, a pixel electrode 35 made of ITO is formed for each pixel region surrounded by the scanning line 31 and the signal line 32 by photolithography. The array substrate AR is manufactured through the above steps.

As described above, since many photolithographic methods are applied in the manufacturing process of the array substrate AR, the non-standard array substrate AR or the liquid crystal display device 10 is manufactured when the resolution of the exposure apparatus deteriorates. Therefore, it is necessary to evaluate the resolution of the exposure apparatus. Therefore, in the present invention, the resolution inspection pattern (see FIG. 1) of the exposure apparatus is formed simultaneously with the manufacture of the array substrate AR. Therefore, in the following, an example of the resolution inspection pattern of the exposure apparatus formed on the array substrate AR of the liquid crystal display device will be described.

FIG. 7 shows a plan view of a resolution inspection pattern 50A of the exposure apparatus according to the first embodiment. The pattern 50A for resolution inspection of this exposure apparatus is formed on a flat surface.
After the conductive material layer 36 is formed on the entire surface of the transparent substrate 11 in the step, the gate electrode G, the auxiliary capacitance line 33, and the auxiliary capacitance electrode 3 are formed by photolithography in the step shown in FIG. 5B.
3a and the gate wiring 17 (see FIG. 1).

The pattern 50A for resolution inspection of this exposure apparatus has six sets of comb-shaped electrodes in which a pair of comb-shaped electrodes each having five comb-tooth portions are arranged with a distance from each other. The pairs 51a to 51f are provided. Here, each comb-like electrode pair 5
The intervals of the comb tooth portions 1a to 51f are different by 1 μm from 1 μm to 6 μm in order. The comb-like electrodes on one side of each of the comb-like electrode pairs 51a to 51f are electrically connected to the common terminal 53 by the first wirings 52a to 52f, respectively, and each of the comb-like electrode pairs The comb-like electrodes on the other side of 51a to 51f are electrically connected to independent individual terminals 55a to 55f by second wirings 54a to 54f, respectively.

The mask for manufacturing the resolution inspection pattern 50A of this exposure apparatus has the same pattern as that shown in FIG. 7 when a positive photoresist is used, and each of the comb-like electrode pairs 52a to 52f, When one wiring 52a to 52f, common terminal 53, second wiring 54a to 54f and individual terminals 55a to 55f are provided with a light-shielding pattern, on the contrary, a negative resist is used. What is necessary is just to use what is provided with the pattern in which the part contrary to the mask for photoresist of this is light-shielded.

In the resolution inspection pattern 50A of the exposure apparatus according to the first embodiment, the interval between the comb portions of each of the comb-like electrode pairs 51a to 51f is different by 1 μm from 1 μm to 6 μm, respectively. It is possible to monitor the resolution of the exposure apparatus by detecting the presence or absence of a short circuit between each of the individual terminals 55a to 55f.

That is, if no short circuit is observed between the common terminal 53 and each of the individual terminals 55a to 55f, it can be confirmed that the resolution of the exposure apparatus is 1 μm or less and highly accurate. However, for example, when a short circuit is recognized between the common terminal 53 and the individual terminal 55c,
Since the distance between the comb-tooth portions of the comb-like electrode pair 51c is 3 μm, the space between the common terminals 53 and the individual terminals 55a (the distance between the comb-tooth portions and the width of the comb-tooth portions: 1 μm) and the common terminal 5
3 and the individual terminals 55b (interval between the comb teeth and the width of the comb teeth: 2 [mu] m) are also observed, and the resolution of the exposure apparatus exceeds 3 [mu] m so that the accuracy is lowered. I can confirm. In the manufacturing process of the liquid crystal display device, since various short-circuit detection means are provided for detecting the presence or absence of electrostatic breakdown, such a short-circuit detection pattern is used for resolution detection of the exposure apparatus of the present invention. Applying can be done easily.

Accordingly, when it is determined that the exposure apparatus is to be maintained when the resolution of the exposure apparatus is 6 μm or more, the short-circuit state between the common terminal 53 and the individual terminals 55a to 55f is changed over time. If you keep track, you can predict how much time will be required for maintenance, so a liquid crystal display device that produces a large amount of non-standard liquid crystal display devices due to resolution degradation of the exposure device No major disruption to the manufacturing process.

In the resolution inspection pattern 50A according to the first embodiment, the six comb-like electrode pairs 51a to 51a-5 are used.
1f was used, and the interval between the comb-tooth portions of each of the comb-like electrode pairs 51a to 51f and the width of the comb-tooth portion were varied by 1 μm from 1 μm to 6 μm. A person skilled in the art can appropriately determine the number and the interval between the comb teeth according to the accuracy of the exposure apparatus required.

If the number of comb-like electrode pairs is one, it can be seen that the resolution of the exposure apparatus has deteriorated beyond a predetermined accuracy, but it is not possible to predict when it will deteriorate beyond the predetermined accuracy, so at least two are necessary. It is. If the number of the comb-like electrode pairs is large, it can be predicted more accurately whether the resolution of the exposure apparatus exceeds the predetermined accuracy. In order to provide the resolution inspection pattern, a large area is required, so about two are preferable.

Further, the distance between the comb-tooth portions of the comb-like electrode pair is appropriately changed depending on the type of the liquid crystal display device to be manufactured. For example, for wiring formation for a printed wiring board, the maximum interval between the comb teeth can be about 10 to 50 μm, and the pattern for gate wiring or source wiring of a liquid crystal display device depends on the size of the liquid crystal display device. Although it changes, it is selected in the range of about 1 to 10 μm as the maximum interval between the comb teeth. Furthermore, in semiconductor integrated circuit manufacturing applications, a smaller numerical value may be adopted as the maximum interval between the comb portions.

The resolution inspection pattern 50A of the exposure apparatus of Example 1 is formed of a conductive layer formed on a flat surface, but an actual liquid crystal display device has a plurality of conductive layers and insulating layers laminated. It has a multilayer structure, and the upper layer of the multilayer structure may be stacked on the step formed by the lower layer. The layer formed on the flat surface and the layer formed on the step are finished using an exposure device. There will be a difference. The layer formed on the flat surface is shaped according to the design value,
A layer formed on a surface with a step or the like tends to have a shape deviating from a design value. Therefore, the resolution inspection pattern 50B of the exposure apparatus of Example 2 was formed of a conductive layer on the upper layer of the multilayer structure. The configuration of the resolution inspection pattern 50B of the exposure apparatus according to the second embodiment will be described with reference to FIGS. 8 and 9. The same components as the resolution inspection pattern 50A of the exposure apparatus according to the first embodiment shown in FIG. Are given the same reference numerals and their detailed description is omitted. FIG. 8 is a plan view of a resolution inspection pattern 50B of the exposure apparatus of Embodiment 2, and FIG. 9 is a cross-sectional view taken along the line IX-IX in FIG.

The configuration of the resolution inspection pattern 50B of the exposure apparatus of Embodiment 2 is different from the resolution inspection pattern 50A of the exposure apparatus of Embodiment 1 in that the surface of the two stripe-shaped conductive patterns 56 extending in parallel is the same. An amorphous silicon layer 57 is provided on the surface of the amorphous silicon layer 57 and the insulating film 58 through the insulating film 58.
The point is that the comb teeth 1a to 51f are formed. For example, in the TFT of the display area,
A gate electrode, a gate insulating film, a semiconductor layer, and a source / drain electrode are stacked, and the source / drain electrode and the like are formed on a surface having a complicated step. Since the resolution inspection pattern 50B is formed on a surface in which the layer structure of the lower layer of the multilayer structure is the same layer structure as the TFT or the like, the inspection can be performed under the condition that the patterning finish is likely to deviate from the design value. It is possible to grasp the situation along the state of the structure in the display area.

5A, after the conductive material layer 36 is formed on the entire surface of the transparent substrate 11 in the step of FIG. 5A, the gate electrode G, the auxiliary capacitance line 33, and the auxiliary capacitance line 56 are formed by photolithography in the step of FIG. 5B. The capacitor electrode 33a and the gate wiring 17 are formed at the same time. The surface of the conductive pattern 56 is covered with an insulating film 58 corresponding to the gate insulating films (37, 38) in the steps of FIGS. 5C to 5E. 5C to 5E show an example in which the gate insulating film has a multilayer structure, but FIG. 9 shows a single layer.

Next, a striped amorphous silicon layer 57 is formed on the surface of the insulating film 58.
The amorphous silicon layer 57 is formed simultaneously with the formation of the TFT semiconductor layer 34 by photolithography in the step of FIG. 5G after the amorphous silicon layer is formed over the entire surface of the insulating film 58 in the step of FIG. 5F. . Here, an example in which the width of the stripe-shaped amorphous silicon layer 57 is made narrower than the conductive pattern 56 is shown, but the present invention is not limited to this, and the conductive pattern 56 may be the same width as the conductive pattern 56. It may be wider than.

Next, comb-shaped electrode pairs 51 a to 51 a are formed on the surfaces of the amorphous silicon layer 57 and the insulating film 58.
The comb-like electrode pairs 51a to 51f are formed so that the comb tooth portion of 51f is located, and the first wirings 52a to 52f, the common terminal 53, the second wirings 54a to 54f, and the individual terminals 55 are formed.
By simultaneously forming a to 55f, the resolution inspection pattern 5 of the exposure apparatus of the second embodiment is used.
0B is obtained. Note that the comb-like electrode pairs 51 a to 51 f and the first wiring 52 in Example 2 are used.
The formation of the a to 52f, the common terminal 53, the second wirings 54a to 54f, and the individual terminals 55a to 55f is the same as the source electrode S and drain electrode D of the TFT, the signal line 32, and the source wiring 18 (see FIG. 6A). 1)).

The method for monitoring the resolution inspection pattern 50B of the exposure apparatus of the second embodiment formed in this way is the same as the case of the resolution inspection pattern 50A of the exposure apparatus of the first embodiment shown in FIG. A description of the specific method is omitted. Similarly, the mask for manufacturing the resolution inspection pattern 50B of the exposure apparatus of the second embodiment requires a mask for forming the conductive pattern 56 and the amorphous silicon layer 57 separately, but the mask for forming other portions is implemented. Example 1
Since the mask having the same pattern as the mask for manufacturing the resolution inspection pattern 50A of the exposure apparatus is used, a detailed description of this mask is also omitted.

Note that, in the resolution inspection pattern 50B of the exposure apparatus according to the second embodiment, the amorphous silicon layer 57 is provided to simulate the TFT formation portion, and therefore the resolution of the exposure apparatus in the TFT formation portion is monitored in particular. If not necessary, it is not necessary to provide it. In that case, the comb-like electrode pairs 51 a to 51 f are provided with the insulating film 5 provided on the conductive pattern 56.
What is necessary is just to form so that the comb-tooth part of the comb-tooth shaped electrode pair 51a-51f may be located in the surface of 8 directly. In this case, the intersection of the scanning line 31 or the auxiliary capacitance line 33 and the signal line 32 of the liquid crystal display device 10 is imitated.

Further, in the resolution inspection pattern 50B of the exposure apparatus of the second embodiment, two striped conductive patterns 56 extending in parallel are positioned below the comb portions of the comb-like electrode pairs 51a to 51f. In the example shown, the stripe-shaped conductive pattern 56 is shown.
May exceed two or may be only one.

The resolution inspection pattern 50A of the exposure apparatus of Example 1 is formed on a flat surface, and the resolution inspection pattern 50B of the exposure apparatus of Example 2 is formed on the upper layer of a multilayer structure. It is also possible to form both at the same time. In Example 3, a resolution inspection pattern 60 of an exposure apparatus provided with both was produced. A resolution inspection pattern 60 of the exposure apparatus according to the third embodiment will be described with reference to FIGS. 10 is a plan view of the resolution inspection pattern 60 of the exposure apparatus according to the third embodiment. FIG. 11 is an enlarged view of a portion X in FIG.
2 is an enlarged view of a Y portion in FIG. 10, and FIG. 13 is a diagram showing a mask pattern used in the third embodiment.

The resolution inspection pattern 60 of the exposure apparatus according to the third embodiment includes a pair of comb-shaped electrodes each having five comb-tooth portions, each of which has a pair of comb-tooth portions spaced apart from each other by a predetermined interval. There are provided comb-like electrode pairs 61a to 61e for the film and five pairs of comb-like electrode pairs 61f to 61j for the multilayer film. An electrode pair formed on a flat surface is expressed as a single film, and an electrode pair formed on a stepped surface is expressed as a multilayer film. Here, as in the case of Example 1 and Example 2, the distance between the comb portions of the five pairs of comb-like electrode pairs 61a to 61e for the single film is in the range of 1 to 5 μm for each comb electrode pair. The intervals between the comb-tooth portions of the five pairs of comb-like electrode pairs 61f to 61j for the multilayer film are all different for each comb-electrode pair.
The distance between the comb-tooth portions of the pair of comb-like electrode pairs 61a to 61e for the single film is the same as the distance between the comb-tooth portions of the corresponding five pairs of comb-like electrode pairs 61f to 61j for the multilayer film. Yes.

Of the five pairs of comb-like electrode pairs 61a to 61e for a single film, one side of each is connected to the common terminal 63a via the first wirings 62a to 62e, and the other side is connected to the second wirings 64a to 64e. 64e is individually connected to the individual terminals 65a to 65e. In addition, among the five pairs of comb-like electrode pairs 61f to 61j for the multilayer film, each one side is all the first wiring 62f.
Are connected to the common terminal 63b via -62j, and the other side is individually connected to the individual terminals 65f-65j via the second wirings 64f-64j, respectively.

Here, in each of the comb-like electrode pairs 61a to 61j, the comb-tooth portions are extended long, and an insulating film is formed below the comb-tooth portions of the multi-layer comb-like electrode pairs 61f to 61j. A plurality of striped conductor films 66 are formed through (not shown). By extending the comb teeth portion in this way, the short-circuit detection portion becomes longer, so that it is possible to accurately detect that the resolution of the exposure apparatus has partially decreased.

The monitoring method of the resolution inspection pattern 60 of the exposure apparatus of the third embodiment formed in this way is the same as the case of the resolution inspection pattern 50A of the exposure apparatus of the first embodiment shown in FIG. A description of the specific method is omitted. Similarly, the mask for manufacturing the resolution inspection pattern 60 of the exposure apparatus of Example 2 requires a mask for forming the conductor film 66 separately, but the pattern of the mask for forming other portions is shown in FIG. When positive type photoresist is used, each of the comb-like electrode pairs 61a to 61j, the first wirings 62a to 62j, the common terminal 63, the second wirings 64a to 64j, and the individual terminals 65a to 65j Use a part with a light-shielding pattern, and conversely when using a negative resist, use a part with a light-shielding pattern opposite to a positive photoresist mask. Good.

Thus, according to the resolution inspection pattern 60 of the exposure apparatus of the third embodiment, the resolution in the case of a single film and the resolution in the case of a multilayer film can be detected simultaneously.

In the resolution inspection pattern 50A of the first embodiment, a pair of comb-like electrode pairs 51a to 51a.
Although the description has been given of the case where the five comb-tooth portions 1f extend linearly with respect to the opposing comb-like electrodes, the comb-tooth portions do not have to extend linearly. Therefore, a resolution inspection pattern 70 according to Example 4 of the present application will be described below with reference to FIG. FIG. 14 is a plan view of the resolution detection means 70 of the exposure apparatus according to the fourth embodiment. The resolution inspection pattern 70 of the fourth embodiment is the same as the resolution inspection pattern 50A of the first embodiment except for the shape of the comb-tooth portions of the pair of comb-like electrode pairs 71a to 71f.

Similar to the resolution inspection pattern 50A of the first embodiment, the resolution inspection pattern 70 of the fourth embodiment is formed on a flat surface, and a conductive material layer is formed on the entire surface of the transparent substrate 11 in the process of FIG. 5A. After forming 36, the gate electrode G, the auxiliary capacitance line 33, the auxiliary capacitance electrode 33a, and the gate wiring 17 (see FIG. 1) are simultaneously formed by the photolithography method in the step of FIG. 5B.

The resolution inspection pattern 70 includes comb-like electrode pairs 71a to 71f in which a pair of comb-like electrodes each having five comb-tooth portions are formed with a predetermined distance therebetween. The comb-tooth portions of the comb-like electrodes constituting the comb-like electrode pairs 71a to 71f are arranged so that the intervals thereof are sequentially different by 1 μm from 1 μm to 6 μm. Similarly, the comb teeth themselves are arranged in such a manner that their widths are different by 1 μm from 1 μm to 6 μm in order.
In addition, the comb-tooth portions of the respective comb-like electrodes are arranged in a shape bent at a plurality of positions in the middle so as to meander.

In the comb-like electrode pairs 71a to 71f, each comb-like electrode on one side is electrically connected to the common terminal 73 by the first wirings 72a to 72f, and each comb-like electrode on the other side. Are independent individual terminals 75a to 75f by second wirings 74a to 74f, respectively.
75f is electrically connected.

The monitoring method of the resolution inspection pattern 70 having the above-described configuration is the same as the resolution inspection pattern 50A of the first embodiment, but is formed so as to meander the comb-tooth portions of the comb-like electrode pairs 71a to 71f. Thus, in addition to the effect of the first embodiment, the dependency on the exposure direction can be eliminated during patterning by the exposure apparatus. That is, even when the resolution is deteriorated depending on a specific exposure direction, this deterioration can be detected with high accuracy.

The mask for manufacturing the resolution inspection pattern 70 is the same pattern as shown in FIG. 14 when a positive photoresist is used, and each of the comb-like electrode pairs 71a to 71a-7.
1f, first wirings 72a to 72f, common terminal 73, second wirings 74a to 74f, and individual terminal 7
5a-75f part having a light shielding pattern is used. Conversely, when a negative resist is used, a part opposite to the positive photoresist mask is provided with a light shielding pattern. Use what you have. In the fourth embodiment, a resolution inspection pattern 70 is used.
However, it can also be formed for a multilayer film as described in Example 2, and similarly, as described in Example 3, it can be formed for a single film and a multilayer. It is also possible to form both for membranes.

As a problem in patterning using an exposure apparatus, there is disconnection of a molded wiring or the like. The problem of disconnection does not increase as the resolution of the exposure apparatus deteriorates, but it suddenly occurs depending on the conditions for exposure and etching. Therefore, from the viewpoint of inspection relating to exposure, it is better to be able to inspect this disconnection. In this embodiment, a disconnection inspection pattern is provided using the same technique as the resolution inspection pattern. The disconnection is likely to occur for a layer formed on a surface with many steps, such as an upper layer of a multilayer structure. Therefore, the inspection pattern 80 for confirming the disconnection is formed of an upper conductive layer having a multilayer structure, like the resolution inspection pattern of the second embodiment. FIG. 15 shows an inspection pattern according to the fifth embodiment, FIG. 15A is a plan view, FIG. 15B is an enlarged view of a portion XVB in FIG. 15A, and FIG. 15C is an X in FIG.
It is VC-XVC sectional view taken on the line.

As shown in FIG. 15, the test pattern 80 according to the fifth embodiment includes a first terminal 81 and a second terminal 82 that are spaced apart from each other by a predetermined distance, and the first and second terminals 81 and 82. And an electrode 83 of a metal pattern to be disposed. Among these, the electrode 83 is for electrically connecting the first and second terminals 81 and 82 and is made of a conductive film patterned in a substantially rectangular wave shape.

Between the first and second terminals 81 and 82, a conductive film pattern 84 as a first pattern extending in the extending direction of the electrode 83 and an amorphous silicon layer 85 as a second pattern are provided. . The conductive film pattern 84 is covered with an insulating film 86 corresponding to the gate insulating films (37, 38) in the steps of FIGS. 5C to 5E, and the amorphous silicon layer 85 is connected to the conductive film pattern via the insulating film 86. 84. The conductive film pattern 84 described above is formed by patterning the conductive material layer 36 formed on the entire surface of the transparent substrate 11 by the photolithography method in the step of FIG. 5A. It is formed at the same time as the line 33, the auxiliary capacitance electrode 33 a and the gate wiring 17. The amorphous silicon layer 85 is formed simultaneously with the TFT semiconductor layer 34 formed in the steps of FIGS. 5F and 5G.

The inspection pattern 80 includes a conductive film pattern 84, an amorphous silicon layer 85, and an insulating film 86.
Is formed by a photolithography method using a mask for forming the inspection pattern 80. When using a positive type photoresist, the mask used at this time is a mask having a pattern in which the first and second terminals 81 and 82 and the electrode 83 are shielded from light. In the case of using a resist, a resist having a light shielding pattern is used in contrast to a positive type. When the inspection pattern 80 is formed using such a mask, a conductor film (not shown) is first formed on a portion where the inspection pattern 80 is formed.
The conductor film is formed by patterning using the above-described mask. By forming the inspection pattern 80 in this way, the electrode 83 is arranged in a substantially rectangular wave shape so as to cross the multilayer film portion composed of the conductive film pattern 84, the insulating film 86 and the amorphous silicon layer 85.

When monitoring the exposure apparatus using the inspection pattern 80 having the above-described configuration, the conduction state between the first and second terminals 81 and 82 may be confirmed. As a result of this confirmation, it can be seen that the electrode 83 is well formed when in the conductive state, and that the electrode 83 has a film breakage at the stepped portion 87 or the like when in the non-conductive state. The inspection by the inspection pattern 80 does not directly inspect the disconnection of the structure in the display area. However, even if the conditions for molding each structure are set to be the same for all substrates, the actual production process has subtle differences depending on the state of the substrate surface and the conditions in the equipment. Is different. Therefore, when disconnection is detected by this inspection pattern 80, there is a possibility that disconnection has occurred in the wiring or the like in the display area. Therefore, a more detailed inspection can be performed and the problem location can be grasped efficiently. In this embodiment, the first and second terminals 81 and 82 are individually provided. However, one terminal may also be used as a common terminal for the resolution inspection pattern.

Hereinafter, as another modified example of the present invention, a test pattern 90 capable of performing a pressure resistance test of an insulating film formed on a substrate will be described as a sixth embodiment. For example, in the case of a three-layer structure of a conductive film, an insulating film, and a conductive film, the insulating film is required to reliably insulate two conductive films, but depending on the conditions when forming each layer, the shape of each layer, etc. The sufficient insulating function of the insulating film cannot be exhibited, and the two conductive films may be short-circuited. Although this phenomenon does not increase due to the deterioration of the resolution of the exposure apparatus, it is desirable to have an inspection function for such a phenomenon. In this embodiment, the inspection pattern is created by using the same technique as that for creating the resolution detection pattern. 16A and 16B are diagrams showing an inspection pattern of Example 6, FIG. 16A is a plan view, FIG. 16B is an enlarged view of the XVIB portion, and FIG. 16C is a cross-sectional view taken along the line XVIC-XVIC.

For example, when forming a scanning line or the like, a resist is applied onto the conductive material layer constituting the scanning line, and after exposure with an exposure apparatus, a pattern with a predetermined shape is formed by etching. The adhesion between the conductive material layer and the resist differs depending on the state. At this time, if the adhesiveness is too high, the etching solution does not easily permeate between the conductive material layer and the resist, and the side surface of the formed layer tends to be reversely tapered. Even if an insulating film is formed so as to cover the scanning line having such a reverse taper, the insulating film becomes a thin film at the corners of the pattern. When the signal line is formed so as to intersect the scanning line, if the insulating film is thin at the intersection, the insulation film has a low withstand voltage, and dielectric breakdown occurs in the insulating film, and the scanning line and the signal line May be short-circuited. Such a structure that is likely to cause dielectric breakdown is also reproduced in the test pattern, and by checking whether or not a short circuit has occurred in this test pattern, there is a possibility that the dielectric breakdown is also occurring in the structure in the display area as well. It can be judged whether it is high.

As shown in FIG. 16, the inspection pattern 90 of the sixth embodiment is arranged between a first terminal 91 and a second terminal 92 that are spaced apart from each other by a predetermined distance, and between the first and second terminals 91 and 92. A pair of comb-like electrodes 93, and two comb-like electrodes 96 constituting the pair of comb-like electrodes 93,
First and second wirings 94 and 95 for electrically connecting 97 to the first and second terminals 91 and 92, respectively.
And is composed of. Note that the inspection pattern 90 of the sixth embodiment is different from those shown in the first to fourth embodiments, and includes only one comb-like electrode pair 93.

The inspection pattern 90 of the sixth embodiment has comb-like electrodes 96, 97 of the comb-like electrode pair 93.
The comb teeth portions 96 a and 97 a are arranged so as to partially overlap with each other through the insulating film 98. In detail, the comb-like electrode 96, the first terminal 91, and the first wiring 94, which are the third electrodes, are formed by patterning the conductive material layer 36 formed on the entire surface of the transparent substrate 11 by the photolithography method in the process of FIG. 5A. Gate electrode G, auxiliary capacitance line 33,
It is formed at the same time as the auxiliary capacitance electrode 33 a and the gate wiring 17. Of the one comb-like electrode 96, the first terminal 91, and the first wiring 94 formed in this way, the surface of one comb-like electrode 96 is covered with an insulating film 98.

The comb-like electrode 97, the second terminal 92, and the second wiring 95 as the fourth electrode are patterned after the insulating film 98 is formed. In this patterning, the comb-tooth portion 97a of the other comb-tooth electrode 97 is partially overlapped with the already-patterned one comb-tooth electrode 96. This patterning is performed in the TFT source electrode S in the process of FIG. 6A.
The drain electrode D, the signal line 32, and the source wiring 18 (see FIG. 1) are formed at the same time.

One comb-like electrode 96, the first terminal 91, and the first wiring 94 are patterned by a mask pattern as shown in FIG. 17A. The other comb-like electrode 97 and the second terminal 9
The second and second wirings 95 are patterned using the mask shown in FIG. 17B. Note that FIG.
When the mask pattern shown in FIG. 7A and FIG. 17B is formed using a positive photoresist, one comb-like electrode 96, the first terminal 91 and the first wiring 94, and the other comb-like electrode. 97, the second terminal 92 and the second wiring 95 portion is used in a light shielding pattern,
In the case of forming using a negative photoresist, a pattern having a light shielding opposite to that of a positive photoresist mask is used.

When performing a withstand voltage test using the inspection pattern 90 formed in this way, a voltage is applied to one terminal, for example, the first terminal 91, and this voltage is gradually increased to increase the voltage from the second terminal 92. Detect output. That is, the voltage applied to the first terminal 91 when the voltage applied to the first terminal 91 exceeds the withstand voltage of the test pattern 90 and causes the insulation film 98 to break down and the voltage is output to the second terminal 92. By measuring this, it becomes possible to know the withstand voltage of various wirings formed on the array substrate AR.

In the above embodiment, the pattern for resolution inspection and the resolution detection method of the exposure apparatus used in the photolithography method have been described. However, the pattern and resolution for resolution inspection when the pattern is produced not only by the exposure apparatus but also by the inkjet method or the printing method. It can also be implemented as a detection method.

Further, in the resolution inspection patterns 50A, 50B, 60, and 70 in the first to fourth embodiments, the intervals between the comb-tooth portions and the comb teeth of the plurality of comb-like electrode pairs 1a to 51f, 61a to 61j, and 71a to 71f. Although the part itself was variably provided to 1 to 6 μm,
Only the interval between the comb portions may be varied to 1 to 6 μm.

It should be noted that the inspection patterns in the first to sixth embodiments of the present invention may be arranged on independent panel substrate pairs or in a necessary number on the sheet substrate.

1 is a schematic plan view of a liquid crystal display device according to the present invention. It is a schematic cross section along the II-II line of FIG. FIG. 2 is a schematic plan view of one pixel that is seen through a color filter substrate of the liquid crystal display device of FIG. 1. It is the IV-IV sectional view taken on the line of FIG. FIG. 2 is a cross-sectional view for sequentially explaining a manufacturing process for one pixel of the liquid crystal display device of FIG. FIG. 6 is a cross-sectional view illustrating the manufacturing process for one pixel of the liquid crystal display device of FIG. 1 subsequent to FIG. 5 in order. 6 is a plan view of a resolution inspection pattern of the exposure apparatus according to Embodiment 1. FIG. 6 is a plan view of a resolution inspection pattern of an exposure apparatus according to Embodiment 2. FIG. It is sectional drawing along the IX-IX line of FIG. 7 is a plan view of a resolution inspection pattern of an exposure apparatus according to Embodiment 3. FIG. It is an enlarged view of the X part of FIG. It is an enlarged view of the Y part of FIG. FIG. 6 is a diagram showing a mask pattern used in Example 3; It is a top view of the resolution detection means 70 of the exposure apparatus of Example 4. FIG. 15A is a plan view, FIG. 15B is an enlarged view of a portion XVB in FIG. 15A, and FIG. 15C is a cross-sectional view taken along the line XVC-XVB in FIG. 15B. It is a figure which shows the test | inspection pattern of Example 6, FIG. 16A is a top view, FIG. 16B is an enlarged view of the XVIB part, FIG. 16C is XVIC-XVIC sectional view taken on the line. FIG. 10 is a diagram showing a mask pattern used in Example 6;

Explanation of symbols

10: liquid crystal display device 12: display area 17: gate wiring 18: source wiring 31: scanning line 32: signal line 33: auxiliary capacitance line 33a: auxiliary capacitance electrode 35: pixel electrode 37
38: Insulating film 39: Protective insulating film 40: Interlayer film 50A, 50B, 60, 70: Patterns for resolution inspection (of the exposure apparatus) 51a to 51f, 61a to 61j, 71a to 71f:
Comb-like electrode pairs 52a to 52f, 62a to 62f, 72a to 72f: first wiring 53,
63a, 63b, 73: Common terminals 54a to 54f, 64a to 64j, 74a to 74f:
Second wiring 55a to 55f, 65a to 65j, 75a to 75f: individual terminals 56 and 66:
Conductive pattern 57: Amorphous silicon layer AR: Array substrate CF: Color filter substrate

Claims (8)

A plurality of electrode pair patterns in which the first electrode and the second electrode are arranged in parallel, and the distance between the first electrode and the second electrode is different for each electrode pair;
A common terminal pattern;
A plurality of individual terminal patterns;
A first for connecting between one electrode of the plurality of electrode pairs and the common terminal
A wiring pattern;
An electro-optical device comprising: a second wiring pattern for connecting between the other electrode of each of the plurality of electrode pairs and the plurality of individual terminals. 2. The electrode pair is a comb-like electrode pair in which each of the first electrode and the second electrode has a comb-like shape, and comb-tooth portions are spaced from each other and opposed to each other. The electro-optical device according to 1. The electro-optical device according to claim 1, wherein each of the electrode pairs is formed so as to intersect the conductive pattern via an insulating film provided on the conductive pattern. The said each electrode pair is formed so that it may cross | intersect the said conductive pattern and a semiconductor layer via the insulating film and semiconductor layer which were provided on the conductive pattern. Electro-optic device. 2. The electro-optical device according to claim 1, wherein the electrode pair is disposed so that the first and second electrodes meander. A first pattern formed simultaneously with the conductive pattern, an insulating film stacked on the first pattern, and formed simultaneously with the semiconductor layer and formed on the insulating film so as to overlap the first pattern A second pattern formed at the same time, a metal pattern formed simultaneously with the electrode pair and arranged to traverse the second pattern a plurality of times, and terminals disposed at both ends of the metal pattern. The electro-optical device according to claim 4. A conductive third electrode; an insulating film stacked on the third electrode; a conductive fourth electrode formed on the insulating film so as to overlap at least one portion with the third electrode; A terminal disposed at one end of the three electrodes and a terminal disposed at one end of the fourth electrode, wherein one of the third electrode and the fourth electrode is formed simultaneously with the electrode pair. The electro-optical device according to claim 1. An inspection method using the electro-optical device according to claim 1 to detect resolution by detecting the presence or absence of a short circuit between a common terminal and a plurality of individual terminals.

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