JP2008103737A5 - - Google Patents
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- Publication number
- JP2008103737A5 JP2008103737A5 JP2007275917A JP2007275917A JP2008103737A5 JP 2008103737 A5 JP2008103737 A5 JP 2008103737A5 JP 2007275917 A JP2007275917 A JP 2007275917A JP 2007275917 A JP2007275917 A JP 2007275917A JP 2008103737 A5 JP2008103737 A5 JP 2008103737A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- silicide
- gate electrode
- channel
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021332 silicide Inorganic materials 0.000 claims 20
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 20
- 230000015572 biosynthetic process Effects 0.000 claims 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims 8
- 239000011229 interlayer Substances 0.000 claims 8
- 239000004065 semiconductor Substances 0.000 claims 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 8
- 239000012535 impurity Substances 0.000 claims 6
- 239000013078 crystal Substances 0.000 claims 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 4
- 229920005591 polysilicon Polymers 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 230000004888 barrier function Effects 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007275917A JP4499774B2 (ja) | 2007-10-24 | 2007-10-24 | 絶縁ゲイト型半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007275917A JP4499774B2 (ja) | 2007-10-24 | 2007-10-24 | 絶縁ゲイト型半導体装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26921596A Division JP4103968B2 (ja) | 1996-09-18 | 1996-09-18 | 絶縁ゲイト型半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009164391A Division JP4515530B2 (ja) | 2009-07-13 | 2009-07-13 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008103737A JP2008103737A (ja) | 2008-05-01 |
| JP2008103737A5 true JP2008103737A5 (OSRAM) | 2009-06-04 |
| JP4499774B2 JP4499774B2 (ja) | 2010-07-07 |
Family
ID=39437765
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007275917A Expired - Fee Related JP4499774B2 (ja) | 2007-10-24 | 2007-10-24 | 絶縁ゲイト型半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4499774B2 (OSRAM) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3226073A3 (en) | 2003-04-09 | 2017-10-11 | Nikon Corporation | Exposure method and apparatus, and method for fabricating device |
| TWI511179B (zh) | 2003-10-28 | 2015-12-01 | 尼康股份有限公司 | 照明光學裝置、曝光裝置、曝光方法以及元件製造方法 |
| TWI512335B (zh) | 2003-11-20 | 2015-12-11 | 尼康股份有限公司 | 光束變換元件、光學照明裝置、曝光裝置、以及曝光方法 |
| TWI511182B (zh) | 2004-02-06 | 2015-12-01 | 尼康股份有限公司 | 光學照明裝置、曝光裝置、曝光方法以及元件製造方法 |
| KR101762083B1 (ko) | 2005-05-12 | 2017-07-26 | 가부시키가이샤 니콘 | 투영 광학계, 노광 장치 및 노광 방법 |
| JP5267029B2 (ja) | 2007-10-12 | 2013-08-21 | 株式会社ニコン | 照明光学装置、露光装置及びデバイスの製造方法 |
| US8379187B2 (en) | 2007-10-24 | 2013-02-19 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
| US9116346B2 (en) | 2007-11-06 | 2015-08-25 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
| KR101945171B1 (ko) * | 2009-12-08 | 2019-02-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| CN102754163B (zh) * | 2010-02-19 | 2015-11-25 | 株式会社半导体能源研究所 | 半导体器件 |
| TWI571058B (zh) * | 2011-05-18 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置與驅動半導體裝置之方法 |
| WO2015097593A1 (en) * | 2013-12-27 | 2015-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3326014B2 (ja) * | 1994-07-14 | 2002-09-17 | 株式会社半導体エネルギー研究所 | 薄膜半導体装置 |
-
2007
- 2007-10-24 JP JP2007275917A patent/JP4499774B2/ja not_active Expired - Fee Related
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