JP2008091361A - Charged particle beam apparatus, and process for fabricating device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a charged particle beam apparatus having a magnetic field lens with small spherical aberration, and to provide a process for fabricating high integration semiconductor devices with accurate pattern precisions. <P>SOLUTION: The charged particle beam apparatus has a second magnetic field lens 602b arranged under a first magnetic field lens 602a in the direction of the optical axis. An opening 102b on the lower end side of a first magnetic pole 102 has a bore diameter D1L larger than the bore diameter D1U of an opening 102a on the upper end side of the first magnetic pole 102, the bore diameter D2U of an opening 103a on the upper end side of the second magnetic pole 103, and the bore diameter D2L of an opening 103b on the lower end side of the second magnetic pole 103. A process for fabricating a device by the charged particle beam apparatus is also provided. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an electron beam exposure apparatus used for exposure of a semiconductor integrated circuit or the like, a charged particle beam exposure apparatus such as an ion beam exposure apparatus, a scanning electron microscope for inspecting a pattern of a circuit or the like in the process of manufacturing a semiconductor integrated circuit, an electron The present invention relates to an inspection apparatus such as a line length measuring apparatus, a charged particle beam apparatus such as a transmission electron microscope, and a device manufacturing method using the charged particle beam apparatus.

Conventionally, methods for reducing spherical aberration of an optical system in optical design include, for example, the average sharing of refractive surfaces, the use of high refractive index glass, the division of lens power, the use of concave lenses, the use of aspherical lenses, etc. 1 is disclosed.
Further, as a method for reducing the spherical aberration of an electromagnetic lens in an electron optical system, non-patent document 2 discloses, for example, strong magnetic pole excitation and use of a multipole lens.
Furthermore, Japanese Patent Laid-Open No. 2004-303547 proposes a method for efficiently canceling out spherical aberration of an objective lens by combining a plurality of multipole lenses.
JP 2004-303547 A Lens Design Guide by Eiichi Takano 38-41 Electron / Ion Beam Optics Katsuaki Ura Kyoritsu Publishing P. 53-80, P.I. 119-128

However, in recent years, with the progress of miniaturization of semiconductor integrated circuits, charged particle beam exposure apparatuses such as electron beam exposure apparatuses and ion beam exposure apparatuses with higher precision, scanning electron microscopes with higher resolution, and electron beam length measurement. Despite the need for inspection devices such as inspection devices and transmission electron microscopes, it is difficult to make concave lenses as easily as conventional optical lenses, so it is possible to significantly reduce spherical aberration. Is difficult. For this reason, it is difficult to produce a charged particle beam apparatus with higher accuracy and an inspection apparatus with higher resolution using a conventional electromagnetic lens.
Accordingly, an object of the present invention is to provide a charged particle beam apparatus having a magnetic lens with small spherical aberration and a device manufacturing method capable of accurately manufacturing pattern dimensions of highly integrated semiconductor devices.

In order to achieve the above object, a charged particle beam device of the present invention includes a first magnetic field lens including a first magnetic pole and an electromagnetic coil that are circumferentially configured and have an upper end opening and a lower end opening;
A second magnetic field lens comprising a second magnetic pole and an electromagnetic coil that are circumferentially configured and have an upper end opening and a lower end opening, and are adjacent to the lower side in the optical axis direction of the first magnetic field lens; In a charged particle beam apparatus having
The bore diameter of the lower end opening of the first magnetic pole is the bore diameter of the upper end opening of the first magnetic pole, the bore diameter of the upper end opening of the second magnetic pole, and the lower end side of the second magnetic pole. It is characterized by being larger than any of the bore diameters of the opening.
Further, in the charged particle beam device of the present invention, the bore diameter of the upper end opening of the second magnetic pole is the bore diameter of the upper end opening of the first magnetic pole and the bore diameter of the lower end opening of the first magnetic pole. , And the bore diameter of the lower end opening of the second magnetic pole is smaller.
Furthermore, in the charged particle beam device of the present invention, the bore diameter of the upper end opening of the first magnetic pole matches the bore diameter of the lower end opening of the second magnetic pole.
Furthermore, in the charged particle beam device of the present invention, the bore diameter of the lower end opening of the first magnetic pole is larger than the bore diameter of the upper end opening of the first magnetic pole, and the bore diameter of the upper end opening of the second magnetic pole. The diameter is smaller than the bore diameter of the opening on the lower end side of the second magnetic pole, and the absolute values of these differences coincide.
Furthermore, the charged particle beam apparatus of the present invention is an exposure apparatus that exposes a desired pattern on a substrate to be exposed using a charged particle beam.
Furthermore, the device manufacturing method of the present invention comprises a step of exposing the substrate to be exposed using the exposure apparatus, and a step of developing the exposed substrate to be exposed.

According to the charged particle beam apparatus of the present invention, the first magnetic field lens has the second magnetic field lens adjacent to the lower side in the optical axis direction, and the bore diameter of the lower end opening of the first magnetic pole is The bore diameter of the upper end opening of the first magnetic pole, the bore diameter of the upper end opening of the second magnetic pole, and the bore diameter of the lower end opening of the second magnetic pole are configured to be larger. Thus, the shape of the magnetic field distribution of the first magnetic lens and the second magnetic lens is changed to reduce the spherical aberration.
Furthermore, according to the device manufacturing method of the present invention, the step of exposing the substrate to be exposed using the exposure apparatus of the charged particle beam device of the present invention, and the step of developing the exposed substrate to be exposed Therefore, a highly integrated semiconductor device can be manufactured with high pattern dimensions.

  Hereinafter, the present invention will be described with reference to the drawings based on the embodiments.

With reference to the cross-sectional view of FIG. 1, a magnetic lens constituting the charged particle beam apparatus according to the first embodiment of the present invention will be described.
In the charged particle beam apparatus according to the first embodiment of the present invention, an electron beam is used as the charged particle beam, but an ion beam may be used instead of the electron beam.
An electron beam emitted from a light source (not shown) has an optical axis 101, and an image plane (not shown) is positioned below.
The first magnetic field lens 602a includes a first magnetic pole 102 and an electromagnetic coil 104 that are formed in a circumferential shape and have an upper end side opening 102a and a lower end side opening 102b. By applying a current to the electromagnetic 104, a magnetic field is generated to converge the electron beam.
The second magnetic lens 602b includes a second magnetic pole 103 and an electromagnetic coil 105 which are configured in a circumferential shape and have an upper end side opening 103a and a lower end side opening 103b. A current is passed through the electromagnetic coil 105 to generate a magnetic field, thereby converging the electron beam.
Further, the second magnetic lens 602b is adjacent to the lower side in the optical axis 101 direction of the first magnetic lens 602a.
The bore diameter D1L, which is the radius of the inner diameter of the lower end opening 102b of the first magnetic pole 102, is the bore diameter D1U, which is the radius of the inner diameter of the upper end opening 102a of the first magnetic pole 102, and the upper end of the second magnetic pole 103. The bore diameter D2U, which is the radius of the inner diameter of the side opening 103a, and the bore diameter D2L, which is the radius of the inner diameter of the lower end side opening 103b of the second magnetic pole 103, are configured.

Further, the bore diameter D2U of the upper end side opening 103a of the second magnetic pole 103 is the bore diameter D1U of the upper end side opening 102a of the first magnetic pole 102, the bore diameter D1L of the lower end side opening 102b of the first magnetic pole 102, and It is preferable that the second magnetic pole 103 is configured to be smaller than any of the bore diameters D2L of the lower end side opening 103b.
Furthermore, it is preferable that the bore diameter D1U of the upper end side opening 102a of the first magnetic pole 102 and the bore diameter D2L of the lower end side opening 103b of the second magnetic pole 103 coincide.
Further, the bore diameter D1L of the lower end opening 102b of the first magnetic pole 102 is larger than the bore diameter D1U of the upper end opening 102a of the first magnetic pole 102, and the bore diameter D2U of the upper end opening 103a of the second magnetic pole 103 is It is preferable that the absolute value of the difference between them is smaller than the bore diameter D2L of the lower end opening 103b of the second magnetic pole 103.

The reason why the two first magnetic lens 602a and the second magnetic lens 602b are provided as described above and the bore diameters of the first magnetic pole 102 and the second magnetic pole 103 are changed for each magnetic pole will be described.
Two commonly used methods for correcting spherical aberration in an optical lens, (1) average sharing of refractive surfaces and (2) average sharing of lens power, were applied to a magnetic lens. In the optical lens, (1) average sharing of the refracting surface is a method of reducing spherical aberration by changing the radius of curvature of the glass surface on the left and right sides of the lens. In the case of a magnetic lens, the shape of the magnetic field distribution can be changed by changing the bore diameters of the two magnetic poles, and (1) the same effect as the average sharing of the refractive surface can be expected. Next, (1) average lens power sharing in an optical lens is a method of reducing spherical aberration by arranging two lenses and dispersing the lens power without changing the combined focal length of the two lenses. In the case of a magnetic lens, the same effect can be expected by arranging two magnetic lenses.

Next, the bore diameter D1U of the upper end side opening 102a of the first magnetic pole 102 and the bore diameter D2L of the lower end side opening 103b of the second magnetic pole 103 are made to coincide with each other. The amount of spherical aberration when the bore diameter D1L is increased and the bore diameter D2U of the upper end opening 103a of the second magnetic pole 103 is decreased is obtained from the optical aberration calculation of the first magnetic lens 602a and the second magnetic lens 602b. It was.
In FIG. 2, the bore diameter D1U of the upper end side opening 102a of the first magnetic pole 102 and the bore diameter D2L of the lower end side opening 103b of the second magnetic pole 103 are made to coincide with each other, and the bore diameter is taken as the reference bore diameter. The difference between the bore diameter D2U of the upper end opening 103a of the second magnetic pole 103 and the reference bore diameter, the difference between the bore diameter D1L of the lower end opening 102b of the first magnetic pole 102 and the reference bore diameter on the Y axis, and the Z axis It is the graph which arranged the amount of spherical aberration.
The combined focal length of the two first magnetic lens 602a and the second magnetic lens 602b was 125 mm, the numerical aperture (NA) of the electron beam was 18.1 mrad, the magnetic pole gap was 32 mm, and D1U and D2L were 40 mm.
From FIG. 2, it can be seen that the spherical aberration amount has a minimum value in the vicinity of −16 mm on the X axis and in the vicinity of +16 mm on the Y axis.
FIG. 3 shows that the bore diameter D1U of the upper end side opening 102a of the first magnetic pole 102 and the bore diameter D2L of the lower end side opening 103b of the second magnetic pole 103 coincide with each other, and that the bore diameter is taken as the reference bore diameter. It is a graph which shows the amount of spherical aberration when changing from 10 mm to 60 mm in increments of 5 mm.
At that time, the absolute value of the difference between the bore diameter D1L of the lower end opening 102b of the first magnetic pole 102 and the reference bore diameter and the difference between the bore diameter D2L of the lower end opening 103b of the second magnetic pole 103 and the reference bore diameter. Are the same, and the difference between the bore diameter D2U of the upper end side opening 103a of the second magnetic pole 103 and the reference bore diameter is taken as the X axis.
The Y-axis is a spherical aberration amount normalized when the difference between the bore diameter D2U of the upper end opening 103a of the second magnetic pole 103 and the reference bore diameter is zero.

4, as in FIG. 3, the bore diameter D <b> 1 </ b> U of the upper end side opening 102 a of the first magnetic pole 102 and the bore diameter D <b> 2 </ b> L of the lower end side opening 103 b of the second magnetic pole 103 are made to coincide with each other. It is a graph which shows a spherical-aberration amount when it is set as a diameter and a reference | standard bore diameter is changed in 2 mm unit from 2 mm to 10 mm.
At that time, similarly to FIG. 3, the absolute value of the difference between the bore diameter D1L of the lower end opening 102b of the first magnetic pole 102 and the reference bore diameter, the bore diameter D2L of the lower end opening 103b of the second magnetic pole 103, and the reference The absolute values of the difference amounts with the bore diameter are the same, and the difference between the bore diameter D2U of the upper end side opening 103a of the second magnetic pole 103 and the reference bore diameter is taken as the X axis.
The Y-axis is a spherical aberration amount normalized when the difference between the bore diameter D2U of the upper end opening 103a of the second magnetic pole 103 and the reference bore diameter is zero.
As in FIG. 2, the combined focal length of the two magnetic lenses was 125 mm, the numerical aperture (NA) of the electron beam was 18.1 mrad, and the magnetic pole gap was 32 mm.
3 and 4 that the minimum value of the spherical aberration amount differs depending on the value of the reference bore diameter. However, at any reference bore diameter, D1L is larger than the reference bore diameter, and the bore diameter D2U of the upper end opening 103a of the second magnetic pole 103 is smaller than the reference bore diameter. The amount of spherical aberration is smaller than when the bore diameter D1L of the lower end side opening 102b of the first magnetic pole 102 and the bore diameter D2U of the upper end side opening 103a of the second magnetic pole 103 are matched.
In particular,
When 0 mm <(D1U = D2L) ≦ 10 mm,
0 mm <(D1L−D1U) = (D2U−D2L) ≦ 5 mm.
When 10 mm <(D1U = D2L) ≦ 20 mm,
0 mm <(D1L−D1U) = (D2U−D2L) ≦ 14 mm.
When 20 mm <(D1U = D2L) ≦ 30 mm,
0 mm <(D1L−D1U) = (D2U−D2L) ≦ 22 mm.

When 30 mm <(D1U = D2L) ≦ 40 mm,
0 mm <(D1L−D1U) = (D2U−D2L) ≦ 32 mm.
When 40 mm <(D1U = D2L) ≦ 50 mm,
0 mm <(D1L−D1U) = (D2U−D2L) ≦ 41 mm.
By setting the numerical values as described above, the reference bore diameter is matched with the bore diameter D1L of the lower end side opening 102b of the first magnetic pole 102 and the bore diameter D2U of the upper end side opening 103a of the second magnetic pole 103. Also, the amount of spherical aberration can be reduced.

FIG. 5 shows the relationship between the reference bore diameter and the absolute value of the difference amount between the bore diameter D2U of the upper end opening 103a of the second magnetic pole 103 and the reference bore diameter at which the spherical aberration amount has the minimum value. It is the graph shown by ratio with respect to.
The X-axis is the size of the reference bore diameter, and the Y-axis is the absolute value of the difference amount between the bore diameter D2U of the upper end opening 103a of the second magnetic pole 103 and the reference bore diameter where the spherical aberration amount is the minimum value. The value divided by.
By linearly approximating from 2 mm to 10 mm and from 10 mm to 60 mm, the optimum bore diameter D1L of the lower end side opening 102b of the first magnetic pole 102 and the upper end side opening 103a of the second magnetic pole 103 at each reference bore diameter. The bore diameter D2U can be obtained.
The above contents do not depend on the electromagnetic coil shapes of the first magnetic lens 602a and the second magnetic lens 602b, and even if the electromagnetic coil shapes of the first magnetic lens 602a and the second magnetic lens 602b are changed. Similarly, the amount of spherical aberration can be reduced.
Further, the above-described contents are the distance between the first magnetic lens 602a and the second magnetic lens 602b, the combined power of the first magnetic lens 602a and the second magnetic lens 602b, and the numerical aperture (NA) of the electron beam. Even when the magnetic pole gaps of the first magnetic lens 602a and the second magnetic lens 602b change, the present invention can be applied.

Next, an electron beam exposure apparatus according to the second embodiment of the present invention using the first magnetic lens 602a and the second magnetic lens 602b described above will be described with reference to a schematic diagram of a main part in FIG.
This electron beam exposure apparatus uses a plurality of electron beams to expose an exposed substrate such as a wafer. The multi-source module forms a plurality of electron source images and emits electron beams from the electron source images. 25 of 5 × 5 are arranged two-dimensionally.
An electron source 601 composed of an electron gun forms a crossover image, and an electron beam 601a emitted from the electron source 601 is a condenser lens including two first magnetic lens 602a and a second magnetic lens 602b. As a result, a substantially parallel electron beam 610b is obtained. The aperture array 603 is formed with openings two-dimensionally arranged. The lens array 604 is formed by two-dimensionally arranging electrostatic lenses having the same optical power. The multi deflector arrays 605, 606, 607, and 608 are formed by two-dimensionally arranging electrostatic deflectors that can be individually driven. The blanker array 609 is formed by two-dimensionally arranging electrostatic blankers that can be individually driven.

Next, each function of the multi-source module will be described.
The substantially parallel electron beam 601b from the condenser lens including the first magnetic field lens 602a and the second magnetic field lens 602b is divided into a plurality of electron beams 601c by the aperture array 603. The divided electron beam 601 c forms an intermediate image 623 of the electron source 601 on the corresponding blanker of the blanker array 609 via the electrostatic lens of the corresponding lens array 604.
At this time, the multi deflector arrays 605, 506, 507, and 508 individually adjust the position of the intermediate image 623 of the electron source 601 formed on the blanker array 509 (the position in the plane orthogonal to the optical axis).
Further, since the electron beam deflected by the blanker array 609 is blocked by the blanking aperture 610, the wafer 620 is not irradiated.
On the other hand, since the electron beam 601d that is not deflected by the blanker array 509 is not blocked by the blanking aperture 610, the wafer 620 is irradiated.
A plurality of intermediate images of the electron source formed by the multi-source module are projected onto the wafer 620 via the reduction projection system of the magnetic lens 615a, 615b, 616a, 616b, 617a, 617b, 618a, 618b.
At this time, when a plurality of intermediate images are projected onto the wafer 620, the focal position can be adjusted by dynamic focus lenses (electrostatic or magnetic field lenses) 611 and 612. The main deflector 613 and the sub deflector 514 deflect each electron beam 601d to a position to be exposed. The backscattered electron detector 619 is for measuring the position of each intermediate image of the electron source formed on the wafer 620. The stage 521 is for moving the wafer 620. The mark 622 is for detecting the position and beam shape of the electron beam 601d.
If the condenser lens composed of the first magnetic lens 602a and the second magnetic lens 602b has a large spherical aberration, the parallel electron beam 601b cannot be irradiated onto the aperture array 603. Then, the telecentricity (inclination of each electron beam) of the electron beam 601b is deteriorated, and the drawing performance such as the positional deviation of the pattern in the field and the connection accuracy between the fields is greatly reduced.
In order to improve the telecentricity of the electron beam, it is necessary to use a condenser lens composed of the two first magnetic lens 602a and the second magnetic lens 602b described above and having reduced spherical aberration.
In the second embodiment, the magnetic lenses 615a, 616a, 617a, and 618a constituting the reduction projection system are configured by the first magnetic lens 602a, and the magnetic lenses 615b, 616b, 617b, and 618b are configured by the second magnetic lens 602b. May be.
Furthermore, the first magnetic lens 602a and the second magnetic lens 602b are not only charged particle beam exposure apparatuses such as electron beam exposure apparatuses and ion beam exposure apparatuses, but also scanning electron microscopes, electron beam length measuring apparatuses, and the like. The present invention can be applied to an inspection device and particularly an objective lens such as a transmission electron microscope.

A device manufacturing method according to the third embodiment of the present invention using the electron beam exposure apparatus including the above-described magnetic lens will be described.
FIG. 7 shows a flow of manufacturing a microdevice (a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin film magnetic head, a micromachine, etc.).
In step 71 (circuit design), a semiconductor device circuit is designed.
In step 72 (EB data conversion), exposure control data for the exposure apparatus is created based on the designed circuit pattern.
On the other hand, in step 73 (wafer manufacture), a wafer is manufactured using a material such as silicon.
Step 74 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the wafer and the exposure apparatus to which the prepared exposure control data is input.
The next step 75 (assembly) is called a post-process, and is a process for forming a semiconductor chip using the wafer produced in step 74, and is a process such as an assembly process (dicing, bonding), a packaging process (chip encapsulation), or the like. including.
In step 76 (inspection), the semiconductor device manufactured in step 75 undergoes inspections such as an operation confirmation test and a durability test. Through these steps, a semiconductor device is completed and shipped (step 77).

FIG. 8 shows a detailed flow of the wafer process.
In step 81 (oxidation), the wafer surface is oxidized. In step 82 (CVD), an insulating film is formed on the wafer surface. In step 83 (electrode formation), an electrode is formed on the wafer by vapor deposition. In step 84 (ion implantation), ions are implanted into the wafer. In step 85 (resist process), a photosensitive agent is applied to the wafer. In step 86 (exposure), the circuit pattern is printed onto the wafer by exposure using the exposure apparatus described above. In step 87 (development), the exposed wafer is developed. In step 88 (etching), portions other than the developed resist image are removed. In step 89 (resist stripping), unnecessary resist after etching is removed. By repeatedly performing these steps, multiple circuit patterns are formed on the wafer.
As described above, by using the device manufacturing method of the third embodiment, the pattern dimensions of a highly integrated semiconductor device can be manufactured with high accuracy.

It is sectional drawing of the 1st and 2nd magnetic field lens which comprises the charged particle beam apparatus of Example 1 of this invention. The bore diameter D1U of the upper end opening of the first magnetic pole and the bore diameter D2L of the lower end opening of the second magnetic pole are made to coincide with each other as the reference bore diameter, and the upper end opening of the second magnetic pole is set on the X axis. 4 is a graph showing the difference between the bore diameter D2U and the reference bore diameter, the difference between the bore diameter D1L of the lower end opening of the first magnetic pole on the Y axis and the reference bore diameter, and the spherical aberration amount on the Z axis. It is a graph explaining the amount of spherical aberration when changing the reference bore diameter from 10 mm to 60 mm in increments of 5 mm. It is a graph explaining the amount of spherical aberration when changing the reference bore diameter from 2 mm to 10 mm in units of 5 mm. The relationship between the reference bore diameter and the absolute value of the difference between the bore diameter D2U of the upper end opening of the second magnetic pole of the second magnetic field lens and the reference bore diameter at which the spherical aberration amount is the minimum value is expressed by the reference bore diameter. It is the graph shown by ratio with respect to. It is the principal part schematic of the electron beam exposure apparatus of Example 2 of this invention which exposes to-be-exposed substrates, such as a wafer, using a several electron beam. It is explanatory drawing of the manufacturing flow of the microdevice by the device manufacturing method of Example 3 of this invention. It is explanatory drawing of the wafer process of the device manufacturing method of FIG.

Explanation of symbols

101 optical axis
602a First magnetic lens 602b Second magnetic lens 104, 105 Electromagnetic coil 601 Electron source (crossover image)
603 Aperture array 604 Lens array 605, 606, 607, 608 Multi deflector array 609 Blanker array 610 Blanking aperture 611, 612 Dynamic focus lens 613 Main deflector 614 Sub deflector 615a, 616a, 617a, 618a First magnetic field lens 615b, 616b, 617b, 618b Second magnetic lens 619 Backscattered electron detector 620 Wafer 621 Stage 622 Mark 623 Intermediate image 624 Lens array power correction control circuit 625 Image

Claims (6)

A first magnetic field lens including a first magnetic pole and an electromagnetic coil which are circumferentially configured and have an upper end opening and a lower end opening;
A second magnetic field lens comprising a second magnetic pole and an electromagnetic coil that are circumferentially configured and have an upper end opening and a lower end opening, and are adjacent to the lower side in the optical axis direction of the first magnetic field lens; In a charged particle beam apparatus having
The bore diameter of the lower end opening of the first magnetic pole is the bore diameter of the upper end opening of the first magnetic pole, the bore diameter of the upper end opening of the second magnetic pole, and the lower end side of the second magnetic pole. A charged particle beam device characterized by being larger than any of the bore diameters of the opening.   The bore diameter of the upper end opening of the second magnetic pole is the bore diameter of the upper end opening of the first magnetic pole, the bore diameter of the lower end opening of the first magnetic pole, and the lower end side of the second magnetic pole. The charged particle beam apparatus according to claim 1, wherein the charged particle beam apparatus is smaller than any of the bore diameters of the openings.   The charged particle beam device according to claim 1 or 2, wherein a bore diameter of an upper end side opening of the first magnetic pole and a bore diameter of a lower end side opening of the second magnetic pole coincide with each other.   The bore diameter of the lower end opening of the first magnetic pole is larger than the bore diameter of the upper end opening of the first magnetic pole, and the bore diameter of the upper end opening of the second magnetic pole is lower end opening of the second magnetic pole. The charged particle beam apparatus according to claim 3, wherein the absolute values of these differences coincide with each other.   5. The charged particle beam apparatus according to claim 1, wherein the charged particle beam apparatus is an exposure apparatus that exposes a desired pattern on a substrate to be exposed using a charged particle beam.   6. A device manufacturing method comprising: exposing the substrate to be exposed using the exposure apparatus according to claim 5; and developing the exposed substrate to be exposed.

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