JP2008088465A - Vapor deposition apparatus, and method of manufacturing organic electroluminescence apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus capable of reducing wasteful consumption of a vapor deposition material caused by the deposition of the vapor deposition material onto a cell shutter with a simple configurstion, and to provide a method of manufacturing an organic EL apparatus by using the vapor deposition apparatus. <P>SOLUTION: In the vapor deposition apparatus 10, when the film deposition operation is repeated, a cell shutter 17 covers an opening part 140 of a crucible 14 while a vapor deposition material 20 in the crucible 14 is heated, and the vapor deposition material 20 evaporated from the crucible 14 is deposited on a lower side of the cell shutter 17. Thus, while covering the opening part 140 of the crucible 14 by the cell shutter 17, the heating of the crucible 14 by a crucible heater 15 is stopped, and the cell shutter 17 is heated by a heater 18 for heating the cell shutter. The vapor deposition material 20 deposited on the lower side of the cell shutter 17 is evaporated and collected in the crucible 14 for reuse. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a vapor deposition apparatus and a method for manufacturing an organic electroluminescence (hereinafter referred to as EL) apparatus using the vapor deposition apparatus.

  In manufacturing various semiconductor devices and electro-optical devices, a thin film is often formed on a substrate by a vacuum deposition method. For example, in manufacturing an organic EL device as an electro-optical device, an organic film (organic functional layer) functioning as a hole transport layer, a light emitting layer, and an electron transport layer is formed on a substrate by a mask vapor deposition method. Here, the vapor deposition apparatus is provided with a crucible (container) for holding the vapor deposition material in the vapor deposition chamber and a vapor deposition heating apparatus, and a cell shutter that covers the crucible opening so as to be openable and closable is provided for the crucible. Has been placed. That is, the film formation start and film formation end can be controlled by controlling the temperature of the vapor deposition material, but the timing at which the opening of the crucible is blocked and opened by the cell shutter to complete the film formation. It is more efficient to control the above.

  However, when such a manufacturing method is adopted, the vapor deposition material evaporated in the crucible adheres to the lower surface of the cell shutter, and the vapor deposition material is wasted. In particular, since the vapor deposition material for forming the organic functional layer is very expensive, the loss of the vapor deposition material increases the manufacturing cost.

  Therefore, it has been proposed that the vapor deposition material evaporated in the crucible is sucked by a suction pipe on the lower surface of the cell shutter and recovered in the vapor deposition material recovery tank (see Patent Document 1).

In addition, a mechanism has been proposed in which a valve with a built-in heater is arranged in front of the crucible so that the material is not scattered except during film formation (see Patent Document 2).
Japanese Patent Laid-Open No. 11-229123 JP 2003-95787 A

  However, in the configuration disclosed in Patent Document 1, since the lower surface of the cell shutter is sucked, there is a high possibility that foreign matter is sucked from the surroundings during suction. Therefore, if the recovered material is used again for film formation, a thin film with low film quality may be formed. Moreover, since the vapor deposition material evaporated in the crucible is once collected in the vapor deposition material recovery tank and then pumped to the crucible, a large-scale modification is required.

  Further, in the configuration disclosed in Patent Document 2, a large-scale modification is required, and there is a possibility that the material is heated and deteriorated in the sealed space.

  In view of the above problems, an object of the present invention is to provide a vapor deposition apparatus capable of reducing wasteful consumption of vapor deposition material due to adhesion of the vapor deposition material to the cell shutter with a simple configuration, and the vapor deposition apparatus. An object of the present invention is to provide a method for manufacturing the organic EL device used.

  In order to solve the above problems, in the present invention, a container for holding a vapor deposition material in a vapor deposition chamber, a heating apparatus for vapor deposition for heating the vapor deposition material in the container, and a state of covering and opening the opening of the container A vapor deposition apparatus including a cell shutter that can be switched between and includes a cell shutter heating apparatus for heating the cell shutter.

  In the present invention, since the cell shutter heating device is provided for the cell shutter, the cell shutter is heated by the cell shutter heating device in a state where the cell shutter covers the opening of the container, and the cell shutter adheres to the cell shutter. The deposited material can be evaporated and collected in the container. Therefore, even when the vapor deposition material adheres to the cell shutter, the vapor deposition material can be directly collected in the container, so that the vapor deposition material can be reused without trouble. In addition, such collection can be performed without contaminating the vapor deposition material, for example, without having to open the vapor deposition chamber to the atmosphere, and even when a film is formed using the collected vapor deposition material, the film quality deteriorates. Does not occur. Moreover, the collection of the vapor deposition material can be performed simply by providing a cell shutter heating device for the cell shutter. Therefore, according to the present invention, it is possible to reduce wasteful consumption of the vapor deposition material due to the adhesion of the vapor deposition material to the cell shutter with a simple configuration.

  In the present invention, when the vapor deposition material adhering to the cell shutter is evaporated and collected in the container, it is preferable that the temperature of the vapor deposition material in the container is set to be equal to or lower than the evaporation temperature. If comprised in this way, the vapor deposition material adhering to a cell shutter can be efficiently collect | recovered to a container.

  In the present invention, since a cell shutter heating device is provided for the cell shutter, the cell shutter is covered when the opening of the container is covered with the cell shutter while the vapor deposition material in the container is heated. It can heat with the said cell shutter heating apparatus. Therefore, the vapor deposition material evaporated in the container can be directly collected in the container without adhering to the cell shutter, and can be reused without trouble. In addition, such collection can be performed without contaminating the vapor deposition material, for example, without having to open the vapor deposition chamber to the atmosphere, and even when a film is formed using the collected vapor deposition material, the film quality deteriorates. Does not occur. Moreover, the collection of the vapor deposition material can be performed simply by providing a cell shutter heating device for the cell shutter. Therefore, according to the present invention, it is possible to reduce wasteful consumption of the vapor deposition material due to the adhesion of the vapor deposition material to the cell shutter with a simple configuration.

  In the present invention, it is preferable that a temperature sensor for monitoring the temperature of the cell shutter is provided. If comprised in this way, since there is no possibility of heating a cell shutter excessively, the vapor deposition material adhering to a cell shutter or the vapor deposition material which is going to adhere to a cell shutter can be collect | recovered by a container, without carrying out thermal deterioration. it can.

  The vapor deposition apparatus to which the present invention is applied can be used, for example, in a method for manufacturing an organic EL device. That is, in the method for manufacturing an organic EL device, a film forming process is performed in which at least an organic functional layer of the organic EL element is deposited on the element substrate using the vapor deposition apparatus. Although the material constituting the organic functional layer of the organic EL element is expensive, if the vapor deposition apparatus to which the present invention is applied is used, the vapor deposition material adhering to the cell shutter can be efficiently collected and reused in a container. The manufacturing cost of the organic EL device can be reduced.

  Embodiments of the present invention will be described below with reference to the drawings. In each figure, the scale is different for each member in order to make each member recognizable on the drawing.

(Configuration example of organic EL device)
1A and 1B are a cross-sectional view and a plan view, respectively, of a main part of a line head which is an example of an organic EL device to which the present invention is applied. 2 (a), 2 (b), and 2 (c) are respectively a plan view of a large substrate used in manufacturing the element substrate shown in FIG. 1, a plan view showing an enlarged main part of the large substrate, and It is a top view of an element substrate.

  An organic EL device 1 shown in FIGS. 1A and 1B is a line head used in a printer using an electrophotographic method, and is a light emitting element array (light emitting section) formed by arranging a plurality of organic EL elements 3. Line) 3A is provided in one or a plurality of rows, for example, three rows. In such a line head, among the organic EL elements 3 included in the light emitting element array 3A, a predetermined organic EL element 3 is turned on and irradiated on the photosensitive drum, whereby an image (latent image) is formed on the photosensitive drum. ). Here, the organic EL device 1 has an elongated rectangular shape. Usually, as shown in FIGS. 2A and 2B, an organic EL element 3 and the like are formed on one large substrate 2A. Thereafter, the substrate is cut into a plurality of element substrates 2 having a single size as shown in FIG. 2C, and in the case of the bottom emission method, a sealing substrate 2B is attached to the element substrate 2.

  In FIG. 1A again, in the case of the bottom emission method in which the organic EL device 1 emits the light emitted from the light emitting layer 7 from the pixel electrode 4 side, the emitted light is extracted from the element substrate 2 side. Therefore, a transparent or translucent substrate is used as the element substrate 2. For example, glass, quartz, resin (plastic, plastic film) and the like can be mentioned, and a glass substrate is particularly preferably used. On the element substrate 2, a circuit portion 5 including a driving transistor 5 a (thin film transistor) electrically connected to the pixel electrode 4 is formed along the light emitting element row 3 </ b> A. An organic EL element 3 is formed. The organic EL element 3 includes a pixel electrode 4 that functions as an anode, a hole transport layer 6 that injects / transports holes from the pixel electrode 4, a light-emitting layer 7 (organic functional layer) made of an organic EL material, An electron injection layer 8 for injecting / transporting electrons and a cathode 9 are stacked in this order. As shown in FIGS. 2A and 2B, an external connection terminal 5b is connected to the circuit portion 5 of the element substrate 2 so that each organic EL element 3 can be controlled from the outside.

(Manufacturing method of the organic EL device 1)
In order to manufacture the organic EL device 1 described with reference to FIGS. 1 and 2, each layer is formed on the element substrate 2 by using a semiconductor process such as a film forming process or a patterning process using a resist mask. However, organic functional layers such as the hole transport layer 6, the light emitting layer 7, and the electron injection layer 8 are easily deteriorated by moisture and oxygen. For this reason, when an organic functional layer such as the light emitting layer 7 is formed, and further, when the cathode 9 is formed, a resist mask is used to remove the resist mask with an etchant or oxygen plasma. At this time, the organic functional layer is deteriorated by moisture or oxygen.

  Therefore, in this embodiment, when forming an organic functional layer such as the light emitting layer 7 and further when forming the cathode 9, a thin film having a predetermined shape is formed on the element substrate 2 by using a mask vapor deposition method. A patterning process using a resist mask is not performed. In this mask vapor deposition method, vapor deposition is performed in a vapor deposition chamber, which will be described later, with a mask placed on a predetermined position of a large substrate 2A (element substrate 2 / substrate to be processed). When the light emitting layer 7 is formed, the low molecular organic EL material is heated and evaporated to form the light emitting layer 7 in a stripe shape on the lower surface of the large substrate 2A through the opening of the mask. The formation of the hole transport layer 6, the electron injection layer 8, the cathode 9 and the like is performed in substantially the same manner.

(Structure of vapor deposition equipment)
3 and 4 are schematic configuration diagrams showing a configuration of a vapor deposition apparatus to which the present invention is applied, and an explanatory diagram showing a configuration example of a vapor deposition material supply unit that supplies a vapor deposition material toward a large substrate in the vapor deposition apparatus. . FIG. 4A shows a state where the cell shutter has covered the opening of the crucible, and FIG. 4B shows a state where the cell shutter has opened the opening of the crucible.

  In FIG. 3, the vapor deposition apparatus 10 of this embodiment holds a substrate holder (not shown) for holding a large substrate 2A (element substrate 2) and a mask (not shown) at an upper position in the vapor deposition chamber 11. While a mask holder (not shown) is disposed, a vapor deposition material supply unit 12 that supplies vapor deposition molecules and vapor atoms to the large substrate 2A is configured at a lower position in the vapor deposition chamber 11. In the vapor deposition chamber 11, a pair of main shutters 13 are arranged between the large substrate 2 </ b> A and the vapor deposition material supply unit 12, just below the large substrate 2 </ b> A, and these main shutters 13 are driven by the main shutter. Connected to the shaft 130, the state is switched between a state where the large substrate 2 </ b> A and the deposition material supply unit 12 are shielded and a state where they are opened. In the vapor deposition chamber 11, a rate monitor 16 having a crystal resonator is disposed at a lateral position between the large substrate 2 </ b> A and the vapor deposition material supply unit 12. The film formation rate is monitored by, for example, a change in oscillation frequency generated when the film is formed. The vapor deposition chamber 11 is connected to an intake pipe, an air supply pipe, etc., but these are not shown.

  As shown in FIGS. 3, 4 (a), and 4 (b), the vapor deposition material supply unit 12 includes a crucible 14 (container) in which the vapor deposition material 20 is stored, and a crucible heater 15 ( The evaporation material 20 in the crucible 14 is heated and evaporated by the crucible heater 15 to form a film on the large substrate 2A.

  The vapor deposition material supply unit 12 includes a cell shutter 17 above the opening 140 of the crucible 14. The cell shutter 17 is connected to the cell shutter drive shaft 170 and covers the opening 140 of the crucible 14. Switch to open state. The cell shutter 17 is configured to cover the edge of the opening 140 of the crucible 14, and the cell shutter 17 covers the opening 140 of the crucible 14 even when the vapor deposition material 20 in the crucible 14 is heated. In this case, film formation on the large substrate 2A is prevented.

  In this embodiment, the cell shutter 17 includes a cell shutter heating heater 18 (cell shutter heating device) and a thermocouple 19 that monitors the temperature of the cell shutter 17. The power supply line for the cell shutter heater 18 and the wiring to the thermocouple 19 are passed through the cell shutter drive shaft 170.

(Deposition operation)
With reference to FIG. 4 in addition to FIG. 3, the film forming operation in the vapor deposition apparatus to which the present invention is applied will be described. In the case of forming a film using the vapor deposition apparatus 10 of this embodiment, the vacuum chamber 11 is evacuated and the opening 140 of the crucible 14 is first opened by the cell shutter 17 as shown in FIG. The vapor deposition material 20 in the crucible 14 is heated by the crucible heater 15. At that time, the main shutter 13 is in the closed position. When the vapor deposition material 20 in the crucible 14 reaches a predetermined temperature equal to or higher than the evaporation temperature, the cell shutter 17 is moved to the open position as shown in FIG. 4B, and as indicated by the arrow L1, the crucible 14 Then, the vapor deposition material 20 is evaporated. As a result, the vapor deposition material 20 deposited from the crucible 14 is deposited on the crystal resonator of the rate monitor 16, and the film formation rate is monitored. Meanwhile, the large substrate 2A is carried into the vapor deposition chamber 11. Then, when the film formation speed becomes stable at a predetermined level in the monitoring result of the rate monitor 16, the main shutter 13 is moved to the open position, and vapor deposition on the large substrate 2A is started.

  Next, when a predetermined film formation time has elapsed, the cell shutter 17 and the main shutter 13 are moved to the closed position, and the film formation on the large substrate 2A is completed.

  Next, the temperature of the vapor deposition material 20 in the crucible 14 is lowered to a temperature slightly lower than the evaporation temperature, for example, 150 ° C., while the large-sized substrate 2 A having been formed is carried out of the vapor deposition chamber 11. Next, the vapor deposition material 20 in the crucible 14 is heated by the crucible heater 15. At that time, the cell shutter 17 and the main shutter 13 are in the closed position. When the vapor deposition material 20 in the crucible 14 reaches a predetermined temperature equal to or higher than the evaporation temperature, the cell shutter 17 is moved again to the open position as shown in FIG. 4B, and the vapor deposition material 20 is removed from the crucible 14. Evaporate. Further, while the film formation speed is monitored by the rate monitor 16, a new large substrate 2A before film formation is carried into the vapor deposition chamber. Then, when the film formation speed becomes stable at a predetermined level in the monitoring result of the rate monitor 16, the main shutter 13 is moved to the open position, and vapor deposition on the large substrate 2A is started. Thereafter, the same operation is repeated.

(Recovery operation)
With reference to FIG. 5, the collection | recovery operation | movement of the vapor deposition material adhering to the lower surface of a cell shutter is demonstrated in the vapor deposition apparatus to which this invention is applied. FIG. 5 is an explanatory diagram showing an operation of collecting the vapor deposition material adhering to the lower surface of the cell shutter in the vapor deposition apparatus to which the present invention is applied.

  In the vapor deposition apparatus 10 of this embodiment, when the above film forming operation is repeated, the cell shutter 17 covers the opening 140 of the crucible 14 while the vapor deposition material 20 in the crucible 14 is heated to the evaporation temperature or higher. The vapor deposition material 20 evaporated from the inside of the crucible 14 adheres to the lower surface of the cell shutter 17.

  Therefore, as shown in FIG. 5, with the opening 140 of the crucible 14 covered with the cell shutter 17, heating of the crucible 14 by the crucible heater 15 is first stopped. Further, the cell shutter 17 is heated by the cell shutter heating heater 18 while the temperature of the cell shutter 17 is monitored by the thermocouple 19. As a result, when the cell shutter 17 becomes equal to or higher than the evaporation temperature of the vapor deposition material 20, the vapor deposition material 20 adhering to the lower surface of the cell shutter 17 evaporates toward the inside of the crucible 14 as indicated by an arrow L2. . Here, since the inside of the crucible 14 is lowered to a temperature below which the vapor deposition material 20 does not evaporate, the vapor deposition material 20 adhering to the lower surface of the cell shutter 17 evaporates toward the inside of the crucible 14, and the crucible 14 14 is collected inside.

(Main effects of this form)
As described above, since the cell shutter heating heater 18 is provided for the cell shutter 17 in the vapor deposition apparatus 10 of this embodiment, the cell shutter 17 is heated while the cell shutter 17 covers the opening 140 of the crucible 14. The vapor deposition material 20 adhering to the cell shutter 17 can be evaporated and collected in the crucible 14. Therefore, even when the vapor deposition material 20 adheres to the cell shutter 17, the vapor deposition material 20 can be directly collected in the container, so that the vapor deposition material 20 can be reused without taking time and effort. Further, such collection can be performed without contaminating the vapor deposition material 20 such that the vapor deposition chamber 11 is not opened to the atmosphere, and even when a film is formed using the collected vapor deposition material 20. No deterioration of film quality occurs. In addition, the vapor deposition material 20 can be collected simply by providing the cell shutter 17 with the heater 18 for heating the cell shutter. Therefore, according to this embodiment, it is possible to reduce useless consumption of the vapor deposition material 20 due to the adhesion of the vapor deposition material 20 to the cell shutter 17 with a simple configuration. In particular, since the vapor deposition material for forming the organic functional layer such as the light emitting layer 7 is very expensive, according to this embodiment, the cost of the organic EL device 1 can be significantly reduced.

  Further, when the vapor deposition material 20 adhering to the cell shutter 17 is evaporated and collected in the crucible 14, the crucible heater 15 stops heating the vapor deposition material 20 in the crucible 14. Since the vapor deposition material 20 collected from the shutter 17 does not evaporate from the crucible 14, the vapor deposition material 20 attached to the cell shutter 17 can be efficiently collected.

  Furthermore, since the temperature of the cell shutter 17 is monitored by the thermocouple 19, there is no risk of excessive heating of the cell shutter 17, so that the vapor deposition material adhering to the cell shutter 17 is recovered in the crucible 14 without causing thermal degradation. can do.

[Example of operation change in vapor deposition equipment]
In the above embodiment, the method of collecting the vapor deposition material 20 attached to the lower surface of the cell shutter 17 is adopted. However, referring to FIG. A method of recovering in the crucible 14 without adhering to the lower surface will be described. In addition, since the basic structure is the same as that of the said embodiment, the form shown here attaches | subjects and demonstrates the same code | symbol to a common part.

  FIG. 6 is an explanatory view showing another operation in the vapor deposition apparatus shown in FIG. As shown in FIG. 6, also in the vapor deposition apparatus 10 of this embodiment, the vapor deposition material supply unit 12 includes the cell shutter 17 above the opening 140 of the crucible 14 as in the first embodiment. 17 is connected to the cell shutter drive shaft 170 and is switched between a state in which the opening 140 of the crucible 14 is covered and an open state. The cell shutter 17 is configured to cover the edge of the opening 140 of the crucible 14, and the cell shutter 17 covers the opening 140 of the crucible 14 even when the vapor deposition material 20 in the crucible 14 is heated. In this case, film formation on the large substrate 2A is prevented. The cell shutter 17 has a built-in cell shutter heater 18 and a thermocouple 19 for monitoring the temperature of the cell shutter 17. The power supply line for the cell shutter heater 18 and the wiring to the thermocouple 19 are passed through the cell shutter drive shaft 170.

  When film formation is performed using the vapor deposition apparatus 10 configured as described above, the opening 140 of the crucible 14 is covered with the cell shutter 17 in a state where the vapor deposition chamber 11 is evacuated, and the crucible heater 15 covers the inside of the crucible 14. The vapor deposition material 20 is heated to the evaporation temperature of the vapor deposition material 20 or higher. At this time, in this embodiment, the cell shutter 17 is also heated to the evaporation temperature or higher of the vapor deposition material 20 by the cell shutter heating heater 18. At that time, the temperature of the cell shutter 17 is monitored by a thermocouple 19. When the vapor deposition material 20 in the crucible 14 reaches a predetermined temperature, the cell shutter 17 is moved to the open position, and the vapor deposition material 20 is evaporated from the crucible 14 to form a film.

  Next, when a predetermined film formation time has elapsed, the cell shutter 17 and the main shutter 13 are moved to the closed position, and the film formation on the large substrate 2A is completed. Here, also when the cell shutter 17 covers the opening 140 of the crucible 14, the cell shutter 17 is heated to a temperature equal to or higher than the evaporation temperature of the vapor deposition material 20 by the cell shutter heating heater 18. Therefore, the vapor deposition material 20 evaporated in the crucible 14 evaporates toward the cell shutter 17 as indicated by an arrow L3. However, since the cell shutter 17 is heated to the evaporation temperature or higher, the vapor deposition material 20 It does not adhere to the lower surface of 17 but is recovered in the crucible 14 and reused.

  As described above, in this embodiment, the vapor deposition material to be attached to the lower surface of the cell shutter 17 can be directly collected without taking time and labor for the crucible 14, and such collection is performed without opening the inside of the vapor deposition chamber 11 to the atmosphere. Can do. Therefore, the vapor deposition material 20 can be collected without being contaminated, and even when a film is formed using the collected vapor deposition material, the film quality does not deteriorate. In addition, the vapor deposition material 20 can be collected simply by providing the cell shutter 17 with the heater 18 for heating the cell shutter. Therefore, according to the present invention, it is possible to reduce useless consumption of the vapor deposition material 20 due to the adhesion of the vapor deposition material 20 to the cell shutter 17 with a simple configuration. In particular, since the vapor deposition material for forming the organic functional layer such as the light emitting layer 7 is very expensive, according to this embodiment, the cost of the organic EL device 1 can be significantly reduced.

  Further, since the temperature of the cell shutter 17 is monitored by the thermocouple 19, there is no risk of excessive heating of the cell shutter 17, so that the vapor deposition material that is to adhere to the cell shutter 17 is recovered in the crucible 14 without causing thermal degradation. can do.

[Other embodiments]
The technical scope of the present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention. For example, in the above embodiment, the description has been made mainly on the example in which the present invention is applied to the formation of the organic functional layer. However, the present invention can also be applied to vacuum deposition of low melting point metals such as magnesium, silver, and aluminum. Good.

  In the above embodiment, the crucible 14 is used as the container, and the crucible 14 is heated by the resistance heating type crucible heater 15. However, as the heating method, in addition to the resistance heating method, a high frequency induction heating method, an electron beam is used. A heating method, a laser beam heating method, or the like may be employed. According to such a heating method, a metal film having a relatively high melting point can be formed.

  Further, as the cell shutter heating device, a high frequency induction heating method or the like may be adopted in addition to the resistance heating method.

  Furthermore, in the above embodiment, mask vapor deposition has been described as an example, but the present invention may be applied to a vapor deposition apparatus that performs vapor deposition on the entire surface of the substrate.

(A), (b) is the principal part sectional drawing of the line head which is an example of the organic electroluminescent apparatus to which this invention is applied, respectively, and a top view. (A), (b), (c) is a plan view of a large substrate used when manufacturing the element substrate shown in FIG. 1, a plan view showing an enlarged main part of the large substrate, and an element substrate. FIG. It is a schematic block diagram which shows the structure of the vapor deposition apparatus to which this invention is applied. It is explanatory drawing which shows the structural example of the vapor deposition material supply part which supplies vapor deposition material toward a large sized substrate in the vapor deposition apparatus shown in FIG. It is explanatory drawing which shows collection | recovery operation | movement of the vapor deposition material adhering to the lower surface of a cell shutter in the vapor deposition apparatus shown in FIG. It is explanatory drawing which shows another operation | movement with the vapor deposition apparatus shown in FIG.

Explanation of symbols

1 .... Organic EL device, 2 .... Element substrate, 2A ... Large substrate, 3 .... Organic EL element, 7 .... Light emitting layer, 10 .... Vapor deposition apparatus, 11 .... Vapor deposition chamber, 12 .... Vapor deposition material supply ..13..Main shutter, 14..Crucible (container), 15 .... Crucible heater (deposition heating device), 16 .... Rate monitor, 17..Cell shutter, 18 .... Cell shutter heater (cell) Shutter heating device), 19 .... thermocouple (temperature sensor), 140 ... crucible opening, 170 ... cell shutter drive shaft

Claims (6)

Vapor deposition apparatus comprising: a container that holds a vapor deposition material in a vapor deposition chamber; a vapor deposition heating apparatus that heats the vapor deposition material in the container; and a cell shutter that is switched between a state in which the opening of the container is covered and an open state. In
A vapor deposition apparatus comprising a cell shutter heating device for heating the cell shutter.   The cell shutter is heated by the cell shutter heating device in a state where the cell shutter covers the opening of the container, and the vapor deposition material adhering to the cell shutter is evaporated and collected in the container. The vapor deposition apparatus according to claim 1.   The vapor deposition apparatus according to claim 2, wherein when the vapor deposition material adhering to the cell shutter is evaporated and collected in the container, the temperature of the vapor deposition material in the container is set to be equal to or lower than the evaporation temperature. .   The cell shutter is heated by the cell shutter heating device when the opening of the container is covered with the cell shutter while the vapor deposition material in the container is heated. Vapor deposition equipment.   The vapor deposition apparatus according to any one of claims 1 to 4, further comprising a temperature sensor that monitors a temperature of the cell shutter. A method for producing an organic electroluminescence device using the vapor deposition device according to any one of claims 1 to 5,
The manufacturing method of the organic electroluminescent apparatus characterized by including the film-forming process which vapor-deposits at least the organic functional layer of an organic electroluminescent element on an element substrate using the said vapor deposition apparatus.

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