JP2008085311A - Method for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for forming an opening portion by a simple process without using a photomask or a resist, and to provide a method for manufacturing a semiconductor device at low cost. <P>SOLUTION: A plurality of light absorbing layers are formed over a substrate, an interlayer insulating layer is formed over the plurality of light absorbing layers, the plurality of light absorbing layers are irradiated with a linear or rectangular laser beam from the interlayer insulating layer side, and at least the interlayer insulating layer which is over the plurality of light absorbing layers is removed and the opening portion is formed; and accordingly, a plurality of opening portions can be formed by removing the plurality of light absorbing layers and the insulating layer formed over the plurality of light absorbing layers. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a semiconductor device including a semiconductor element having an opening.

  2. Description of the Related Art Conventionally, a so-called active matrix driving display panel or a semiconductor integrated circuit including a semiconductor element represented by a thin film transistor (hereinafter also referred to as “TFT”) or a MOS (Metal Oxide Semiconductor) transistor uses a photomask. A resist mask is formed by an optical exposure process (hereinafter referred to as a photolithography process), and openings are formed by selectively etching various thin films.

  In the photolithography process, a resist is applied to the entire surface of the substrate and pre-baked, and then the resist is exposed to ultraviolet rays and the like through a photomask, and developed to form a resist mask. Thereafter, using the resist mask as a mask, a layer (a layer formed of a semiconductor material, an insulator material, or a conductor material, particularly a layer formed of an insulating material) existing in a portion to be an opening is etched away. Thus, an opening is formed.

Further, the present applicant has disclosed a thin film processing method in which a light-transmitting conductive film is irradiated with a linear beam using a laser beam having a wavelength of 400 nm or less to form an open groove in Patent Document 1 and Patent Document 2. It is described.
JP-A 63-84789 JP-A-2-317

  However, a photomask using a photolithography technique is very expensive because it has a fine shape and requires high accuracy of the shape.

  Further, when the design of the semiconductor device is changed, naturally, it becomes necessary to prepare a new photomask in accordance with the opening to be changed. As described above, since the photomask is a modeled object in which a fine shape is formed with high accuracy, a considerable amount of time is required for production. In other words, not only a financial burden but also a time delay risk is borne in exchange of a photomask due to a design change or design deficiency.

  In addition, since the resist and the resist developer are used in the opening forming process of the photolithography process, there is a problem that a large amount of chemical solution and water are required and a large amount of waste liquid needs to be processed.

  Therefore, the present invention presents a method for forming an opening by a simple process without using a photomask or a resist. In addition, a method for manufacturing a semiconductor device at low cost is proposed.

  In the method for manufacturing a semiconductor device disclosed in the present invention, a plurality of light absorption layers are formed over a substrate, an interlayer insulating layer is formed over the plurality of light absorption layers, and the plurality of light absorption layers are formed from the interlayer insulating layer side. An opening is formed by irradiating a linear or rectangular laser beam to remove at least a plurality of interlayer insulating film layers on the light absorption layer.

  A laser beam applied to a plurality of light absorption layers is linear or rectangular, a light absorption layer is formed only in a region where an opening is to be formed, and the others are formed of a light-transmitting layer. By irradiating a plurality of light absorbing layers and a light-transmitting layer around them with a linear or rectangular laser beam, an interlayer insulating layer on the plurality of light absorbing layers can be selectively removed. And an opening can be formed.

  In addition, a plurality of light absorption layers are formed so as to be aligned in a certain direction, a light-transmitting conductive layer is formed in a direction crossing the direction, and a line is formed in the plurality of light absorption layers aligned in the certain direction. A rectangular or rectangular laser beam is irradiated. As a result, openings can be formed in the interlayer insulating layers on the plurality of light absorption layers without forming openings in the interlayer insulating layers on the other conductive layers.

  Note that as a typical example of the opening, a first conductive layer and a second conductive layer which are formed over a semiconductor layer such as a source region or a drain region which are impurity regions through an insulating layer, and a source region or a drain In order to connect the region, there is an opening formed in the insulating layer formed on the semiconductor layer. Further, in order to connect the first conductive layer or the second conductive layer through the insulating layer, the opening is formed in the insulating layer formed on the first conductive layer or the second conductive layer. .

  The present invention is not limited to the above, and includes not only semiconductor devices using thin film transistors (display devices such as liquid crystal display devices, light-emitting display devices, and electrophoretic display devices), but also LSI (Large Scale Integrated Circuit) storage devices, The present invention can also be appropriately implemented in an opening portion of an integrated circuit (IC) such as a logic circuit or a transistor used in an RFID (Radio frequency identification) tag.

  In the present invention, the above-described display device refers to a device using a display element, that is, an image display device. In addition, a connector, for example, a module in which a flexible printed wiring (FPC), TAB (Tape Automated Bonding) tape or TCP (Tape Carrier Package) is attached to the display panel, and a printed wiring board is attached to the end of the TAB tape or TCP. It is assumed that the display device includes all provided modules or modules in which an IC (Integrated Circuit) or a CPU is directly mounted on a display element by a COG (Chip On Glass) method.

  The present invention selectively irradiates a region where a plurality of light absorption layers are formed with a linear or rectangular laser beam so that the plurality of light absorption layers and the insulating layers formed on the plurality of light absorption layers are formed. The layer can be removed to form a plurality of openings.

  In addition, a plurality of light absorption layers are formed side by side in the first direction, a light-transmitting conductive layer is formed in a direction intersecting the first direction, and the plurality of light absorption layers and the light-transmitting conductive material are formed. After forming the insulating layer on the layer, the light absorbing layer and the insulating layer formed on the light absorbing layer are selectively irradiated with a linear laser beam to the plurality of light absorbing layers aligned in the first direction. It can be removed to form a plurality of openings. That is, all the regions where the openings are not formed are formed using a light-transmitting material, and the region where the light absorption layer is formed is selectively irradiated with a linear laser beam, so that an arbitrary region on the substrate can be formed. An opening can be formed at the position.

  In addition, by irradiating a plurality of light absorption layers with a laser beam such as a linear laser beam or a rectangular laser beam, a plurality of light absorption layers can be irradiated at one time. It can be manufactured with high mass productivity.

  Therefore, the opening can be formed without using a resist or a photomask that is necessary in the conventional photolithography technique. Since no photomask is used, it is possible to reduce the time loss required for photomask replacement, and it is possible to produce a variety of products in small quantities. Further, since a resist and a resist developer are not used, a large amount of chemical solution or water is not required. As described above, the process can be greatly simplified and the cost can be reduced as compared with a process for forming an opening using a conventional photolithography technique.

  Thus, by using the present invention, a contact opening process in a semiconductor device can be performed in a simple process. In addition, a method for manufacturing a semiconductor device can be provided at low cost.

  The best mode for carrying out the invention will be described below with reference to the drawings. However, the present invention can be implemented in many different modes, and those skilled in the art can easily understand that the modes and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention should not be construed as being limited to the description of the embodiment modes. In the drawings, common portions are denoted by the same reference numerals, and detailed description thereof is omitted.

(Embodiment 1)
In this embodiment mode, a laser ablation process (LAP) in which an opening is formed by irradiation with a laser beam without performing a photolithography process is described below. 1 to 5 are a top view and a cross-sectional view illustrating a process of forming an opening in an insulating layer formed over a substrate in a pixel portion in which pixels including display elements are arranged in a matrix. A cross-sectional view taken along a line AB in FIGS. 1A to 5A is shown in FIGS. 1B to 5B, respectively.

  In this embodiment, a top-gate thin film transistor is used as a thin film transistor which is a part of the display element, and an opening is formed in an insulating layer formed over a semiconductor layer of the thin film transistor. However, the present invention is not limited to this, and an opening is formed in an insulating layer formed over an inverted staggered thin film transistor, or an opening is formed in an insulating layer formed over a first wiring. Applicable as appropriate.

  In this embodiment mode, a mode in which a linear laser beam is applied to a plurality of light absorption layers in a direction intersecting with a gate wiring in a pixel portion in which pixels including display elements are arranged in a matrix is described. To do.

  As shown in FIGS. 1A and 1B, a first layer 102 that functions as a base film is formed on one side of a substrate 101, a second layer 103 is formed on the first layer 102, and The light absorption layer 104 is formed over the second layer 103.

  As the substrate 101, a glass substrate, a plastic substrate, a metal substrate, a ceramic substrate, or the like can be used as appropriate. Further, a printed wiring board or FPC can be used. When the substrate 101 is a glass substrate or a plastic substrate, a large area substrate such as 320 mm × 400 mm, 370 mm × 470 mm, 550 mm × 650 mm, 600 mm × 720 mm, 680 mm × 880 mm, 1000 mm × 1200 mm, 1100 mm × 1250 mm, 1150 mm × 1300 mm is used. be able to. Here, a glass substrate is used as the substrate 101.

  The first layer 102 which functions as a base film is not necessarily required, but has a function of preventing the substrate 101 from being etched when a layer formed over the first layer 102 is etched later. Therefore, providing is preferable. In the case where a glass substrate is used as the substrate 101, it is preferably provided to prevent impurities such as an alkali metal element contained in the glass substrate from moving to the semiconductor layer. The first layer 102 may be formed using a suitable material as appropriate. Typically, there are silicon oxide, silicon nitride, silicon oxynitride, aluminum nitride, and the like.

  The first layer 102 is formed by a sputtering method, an LPCVD method, a plasma CVD method, an evaporation method, a coating method, or the like. Here, a silicon nitride oxide layer and a silicon oxide layer are stacked by a plasma CVD method.

  As the second layer 103, an electrode, a pixel electrode, a wiring, an antenna, a semiconductor layer, an insulating layer, or the like can be formed as appropriate. In addition, a conductive material, an insulating material, or a semiconductor material can be used as appropriate depending on a portion to be formed such as an electrode, a pixel electrode, a wiring, an antenna, a semiconductor layer, or an insulating layer.

  Note that the second layer 103 is preferably formed using a material that does not absorb a laser beam 114 that is irradiated later. As a result, even if the light absorption layer 104 is irradiated with the laser beam 114 later, the second layer 103 is not affected.

  The second layer 103 is formed by a sputtering method, an LPCVD method, a plasma CVD method, an evaporation method, a coating method, a droplet discharge method, an electrolytic plating method, an electroless plating method, or the like.

  In this embodiment, a semiconductor layer is formed as the second layer 103. The semiconductor layer is formed using silicon, germanium, or the like. In addition, an amorphous semiconductor, a semi-amorphous semiconductor in which an amorphous state and a crystalline state are mixed (also referred to as SAS), and a microcrystal in which a crystal grain of 0.5 nm to 20 nm can be observed in the amorphous semiconductor. A film having any state selected from a semiconductor and a crystalline semiconductor film can be used. An acceptor element or a donor element such as phosphorus, arsenic, or boron may be included in a region to be a source region and a drain region later. Here, a crystalline semiconductor layer etched into a predetermined shape is formed as the semiconductor layer. Impurity regions 103a and 103b containing phosphorus are formed in the semiconductor layer.

  The light absorption layer 104 is formed using a material that absorbs a laser beam 114 to be irradiated later. As a material that absorbs the laser beam 114, a material having a band gap energy smaller than that of the laser beam 114 is used. The light absorption layer 104 is preferably formed using a material having a boiling point or a sublimation point lower than the melting point of the second layer 103. By using such a material, the laser beam 114 is absorbed while avoiding melting of the second layer 103, and part of the light-transmitting layer in contact with the light absorption layer 104 using the energy of the laser beam 114 is used. Can be removed.

  As the light absorption layer 104, a conductive material, a semiconductor material, or an insulating material can be used as appropriate. Examples of conductive materials include titanium (Ti), aluminum (Al), tantalum (Ta), tungsten (W), molybdenum (Mo), copper (Cu), chromium (Cr), neodymium (Nd), and iron (Fe). , Nickel (Ni), cobalt (Co), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), silver (Ag), gold (Au), platinum (Pt) An element selected from cadmium (Cd), zinc (Zn), silicon (Si), germanium (Ge), zirconium (Zr), and barium (Ba) can be used. Further, it can be formed of a single layer or a stacked layer of an alloy material containing the element as a main component, a nitrogen compound, or the like. Indium oxide including tungsten oxide, indium zinc oxide including tungsten oxide, indium oxide including titanium oxide, indium tin oxide including titanium oxide, indium tin oxide (ITO), indium zinc oxide, oxidation A light-transmitting conductive material such as indium tin oxide to which silicon is added can also be used.

  As the insulating material, a single layer of an oxygen compound, a carbon compound, or a halogen compound of the above element can be used. Further, a stack of these can be used. Typical examples include zinc oxide, aluminum nitride, zinc sulfide, silicon nitride, silicon oxide, mercury sulfide, and aluminum chloride. An insulating film in which particles capable of absorbing light are dispersed, typically a silicon oxide film in which silicon microcrystals are dispersed, can be used. Alternatively, an insulating layer in which a dye is dissolved or dispersed in an insulator can be used.

  As the semiconductor material, silicon, germanium, or the like can be used. In addition, an amorphous semiconductor, a semi-amorphous semiconductor in which an amorphous state and a crystalline state are mixed (also referred to as SAS), and a microcrystal in which a crystal grain of 0.5 nm to 20 nm can be observed in the amorphous semiconductor. A film having any state selected from a semiconductor and a crystalline semiconductor film can be used. Furthermore, acceptor-type elements or donor-type elements such as phosphorus, arsenic, and boron may be included.

  Further, the light absorption layer 104 absorbs a laser beam 114 to be irradiated later, and emits gas in the light absorption layer 104 or sublimates the light absorption layer 104 by the energy of the laser beam 114. It is preferable to use a material that can physically dissociate a part of the layer or the layer in contact with the light absorption layer 104. By using such a material, the light absorption layer 104 can be easily removed.

  As a light absorption layer capable of releasing gas in the light absorption layer 104 by the energy of the laser beam 114, there is a layer formed of a material containing at least one of hydrogen and a rare gas element. Typically, a semiconductor layer containing hydrogen, a conductive layer containing noble gas or hydrogen, an insulating layer containing noble gas or hydrogen, and the like can be given. In this case, since physical dissociation occurs in a part of the light absorption layer 104 as the gas is released in the light absorption layer 104, the light absorption layer 104 can be easily removed.

  The light absorption layer that can be sublimated by the energy of the laser beam 114 is preferably a material having a low sublimation point of about 100 to 2000 ° C. Alternatively, a material having a boiling point of 1000 to 2700 ° C. and a thermal conductivity of 0.1 to 100 W / mK can be used. As the light absorption layer capable of sublimation, a material having a low sublimation point of about 100 to 2000 ° C. can be used. Typical examples include aluminum nitride, zinc oxide, zinc sulfide, silicon nitride, mercury sulfide, and aluminum chloride. Examples of the material having a boiling point of 1000 to 2700 ° C. and a thermal conductivity of 0.1 to 100 W / mK include germanium (Ge), silicon oxide, chromium (Cr), and titanium (Ti).

  The light absorbing layer 104 can be selectively formed by an electrolytic plating method, an electroless plating method, a droplet discharge method, or the like. Alternatively, the light absorption layer 104 can be formed by selective etching after deposition by a coating method, a sputtering method, or a CVD method.

  Here, a chromium layer having a thickness of 10 to 100 nm, preferably 20 to 50 nm, is formed as the light absorption layer 104.

  Next, as illustrated in FIG. 2B, a light-transmitting layer is formed over the first layer 102, the second layer 103, and the light absorption layer 104. The light-transmitting layer can be formed as a single layer or a stacked layer.

  The light-transmitting layer may be formed by appropriately selecting a material that can transmit a laser beam 114 that is irradiated later. As a material that transmits the laser beam 114, a material having a band gap energy larger than that of the laser beam is used.

  Here, as the light-transmitting layer, a gate insulating layer 111, a gate wiring 112, and an interlayer insulating layer 113 are sequentially formed.

  The gate insulating layer 111 is formed with a single layer or a stacked structure of silicon nitride, silicon nitride containing oxygen, silicon oxide, silicon oxide containing nitrogen, or the like. Here, silicon oxide with a thickness of 50 to 200 nm is formed by a plasma CVD method.

  Note that in this embodiment, as illustrated in FIG. 2A, when the light absorption layer 104 is irradiated with a laser beam later, part of the gate wiring 112 is also irradiated with the laser beam. Therefore, the gate wiring 112 is preferably formed using a light-transmitting conductive layer.

  The light-transmitting conductive layer is formed using a material having a band gap energy larger than that of a laser beam irradiated later. Here, ITO having a thickness of 50 to 200 nm, preferably 100 to 150 nm, formed by a sputtering method is used as the light-transmitting conductive layer.

  Further, when the light absorption layer 104 is irradiated with a laser beam later, a conductive layer that absorbs light may be formed in contact with the gate wiring as an auxiliary wiring in a region where the laser beam is not irradiated. In particular, the auxiliary wiring is preferably formed of a conductive layer having a low resistivity. As the conductive layer having low resistivity, a metal layer containing platinum, palladium, nickel, gold, aluminum, copper, silver, tantalum, tungsten, molybdenum, or titanium can be typically used.

  As the interlayer insulating layer 113, a skeleton structure is formed by bonding of polyimide, polyamide, BCB (benzocyclobutene), acrylic, siloxane (silicon and oxygen, which is applied by an SOG (Spin On Glass) method or a spin coating method, Organic resin films such as a substance having a structure in which at least one of fluorine, aliphatic hydrocarbons, and aromatic hydrocarbons is bonded to silicon), inorganic interlayer insulating films (insulating films containing silicon such as silicon nitride and silicon oxide) , A low-k (low dielectric constant) material or the like can be used. The interlayer insulating layer 113 is preferably a film having excellent flatness because it has a strong meaning of relieving unevenness due to TFTs formed on a glass substrate and flattening. Here, a polyimide layer having a thickness of 300 to 1000 nm is formed by a coating method.

  Next, the light absorption layer 104 is irradiated with a laser beam 114. As the laser beam 114, a laser beam having energy that passes through the interlayer insulating layer 113 and is absorbed by the light absorption layer 104 is appropriately selected. Typically, irradiation is performed by appropriately selecting a laser beam in an ultraviolet region, a visible region, or an infrared region.

As a typical example of a laser oscillator that emits the laser beam 114, an excimer laser such as an F ₂ laser, an YAG laser, a YLF laser, a YAlO ₃ laser, a GdVO ₄ laser, and a Y ₂ O ₃ that are solid lasers are used for ultraviolet light. There are harmonics such as laser, PbWO ₄ laser, YVO ₄ laser and the like. In the case of visible light, there are Ar laser, Kr laser, harmonics of the solid laser, and the like. Examples of infrared light include the fundamental wave of the solid-state laser, semiconductor lasers such as GaN, GaAs, GaAlAs, and InGaAsP, CO ₂ laser, glass laser, Ti: sapphire laser, dye laser, and alexandrite laser. Here, the fundamental wave of the YAG laser is irradiated.

  As the laser beam 114, a continuous wave laser beam or a pulsed laser beam can be used as appropriate. In a pulsed laser beam, a frequency band of several tens to several hundreds of Hz is usually used, but an oscillation frequency of 10 MHz or higher, a pulse width of a frequency range of picoseconds or a femtosecond (10− A laser beam emitted from a pulsed laser having a frequency of 15 seconds) may be used. In particular, a laser beam emitted from a pulsed laser oscillated with a pulse width of 1 femtosecond to 10 picoseconds has a high intensity, produces a nonlinear optical effect (multiphoton absorption), and has a band larger than the energy of the laser beam. A layer formed of a light-transmitting material having gap energy can also be removed by the energy of the laser beam.

  In addition, it is desirable to use a pulsed laser to prevent excessive laser light from being absorbed and damaged by the semiconductor layer, glass substrate, etc. Use a picosecond laser or femtosecond laser with a very short pulse width. Is more desirable.

  The laser irradiation apparatus has an optical system that linearizes a laser beam emitted from a laser oscillator. As such an optical system, a cylindrical lens, a slit, a mask, or the like is used.

  An electro-optic element can be used as an optical system for linearizing the laser beam. The electro-optic element functions as an optical shutter or an optical reflector by inputting an electric signal based on design CAD data of the semiconductor device, and functions as a variable mask. The area and position of the laser beam can be changed by changing the electric signal input to the electro-optical element serving as the optical shutter by the control device. That is, the area and position where the thin film is processed can be selectively changed.

  Examples of the electro-optic element include an element that can selectively adjust an area through which light is transmitted, such as an element having a liquid crystal material or an electrochromic material. Further, there is an element that can selectively adjust light reflection, for example, a digital micromirror device (also referred to as DMD). DMD is a type of spatial light modulator, and is a device in which a plurality of small mirrors called micromirrors that rotate around a fixed axis by electrostatic action or the like are arranged in a matrix on a semiconductor substrate such as Si. As another electro-optical element, a PLZT element that is an optical element that modulates transmitted light by an electro-optical effect can be used. The PLZT element is an oxide ceramic containing lead, lanthanum, zircon, and titanium, and is a device called PLZT from the initials of each element symbol. The PLZT element transmits light with a transparent ceramic, but when a voltage is applied, the direction of polarization of light can be changed, and an optical shutter is configured by combining with a polarizer. However, as the electro-optic element, a device that can withstand the laser beam is used.

  The shape of the spot of the laser beam irradiated on the irradiation surface is preferably linear or rectangular. In the case of using a large-area substrate, the long side of the laser beam spot is preferably set to 20 cm to 100 cm in order to shorten the processing time. A plurality of laser oscillators and optical systems may be installed to process a large area substrate in a short time. Specifically, a plurality of electro-optical elements may be installed above the substrate stage, and a laser beam may be emitted from a corresponding laser oscillator to share the processing area of one substrate.

  In addition to the laser oscillator, the laser irradiation apparatus that irradiates the laser beam preferably includes a substrate stage on which the substrate is installed, a control device, and position alignment means.

  The alignment of the irradiation position can be performed with high accuracy by installing an image pickup device such as a CCD (Charge Coupled Device) camera and performing laser irradiation based on data obtained from the image pickup device.

  The control device can irradiate a wide area of the substrate by scanning the laser beam irradiation area one-dimensionally or two-dimensionally on the irradiated surface. Further, it is preferable that the control device is interlocked so that the moving means for moving the substrate stage two-dimensionally can also be controlled. Further, the control device is preferably interlocked so that the laser oscillator can also be controlled. Furthermore, it is preferable that the control device is interlocked with a position alignment mechanism for recognizing the position marker.

  Here, the scanning is performed by a moving means that two-dimensionally moves the substrate stage holding the substrate.

The light absorption layer 104 is selectively irradiated with the laser beam 114 using the electro-optic element. The laser beam 114 may have an energy density sufficient for gas emission in the light absorption layer 104 and sublimation of the light absorption layer, typically within an energy density range of 1 μJ / cm ^{2 to} 100 J / cm ^2. it can. A laser beam 114 having a sufficiently high energy density is absorbed by the light absorption layer 104. At this time, the light absorption layer 104 is locally heated and sublimated by the energy of the absorbed laser beam. The light absorption layer 104 is physically dissociated and scattered by the volume expansion accompanying the sublimation. Thus, the interlayer insulating layer on the light absorption layer 104 can be removed, and the opening 121 can be formed as shown in FIG. Here, the YAG second harmonic is used as the laser beam 114.

  In addition, when dust is generated by laser beam irradiation, it is preferable to further provide a blow unit or a dust vacuum unit in the laser irradiation apparatus for preventing the dust from adhering to the surface of the substrate to be processed. By simultaneously blowing or vacuuming the dust while irradiating the laser beam, the dust can be prevented from adhering to the substrate surface.

  Irradiation with the laser beam 114 can be performed under atmospheric pressure or reduced pressure. When performed under reduced pressure, it becomes easy to collect scattered matter that is generated when the light absorption layer 104 is removed. For this reason, it is possible to prevent the scattered matter from remaining on the substrate.

  Furthermore, the light absorption layer 104 may be irradiated with a laser beam while the substrate 101 is heated. Also in this case, the light absorption layer 104 can be easily removed.

  In this embodiment mode, a plurality of light absorption layers 104 formed in a direction intersecting with the gate wiring 112 is irradiated with a linear laser beam 114. Typically, a laser beam is irradiated in a direction intersecting with the gate wiring 112 at 90 degrees. In this embodiment mode, since the gate wiring 112 is formed using a light-transmitting conductive layer, a plurality of light absorption layers 104 are formed by irradiating the laser beam 114 in a direction intersecting with the gate wiring 112 at 90 degrees. In addition, the light-transmitting layer formed over the plurality of light absorption layers 104 can be removed, and an opening can be formed over the second layer 103. At this time, an interlayer insulating layer 123 having an opening and a gate insulating layer 122 having an opening are formed.

  In FIG. 2, the laser beam 114 is irradiated in the direction intersecting with the gate wiring 112 at 90 degrees, but the laser beam may be irradiated in parallel with the gate wiring 112. In this case, the second layer 103 is preferably formed using a material that does not absorb the laser beam. As a result, since the gate wiring 112 and the second layer 103 have a light-transmitting property, a part of the plurality of light absorption layers 104 and the light-transmitting layer is removed, and an opening is formed over the second layer 103. Can be formed.

  Note that in this embodiment mode, by irradiating the plurality of light absorption layers 104 with the linear laser beams 114, the plurality of light absorption layers and the light-transmitting layer in contact with the light absorption layers are scattered, so that the openings The form in which the part is formed is shown.

  Further, a plurality of light absorption layers 104 are irradiated with a linear laser beam 114, and an upper layer portion of the light absorption layer and a light-transmitting layer are scattered, and a lower layer portion of the light absorption layer is on the second layer 103. In some cases. In such a case, a third layer to be formed later may be formed while leaving the remaining light absorption layer. Further, after the remaining light absorption layer is removed by dry etching or wet etching, a third layer to be formed later may be formed.

  In some cases, only the light-transmitting layer in contact with the light absorption layer 104 is removed by irradiation with the laser beam 114. In such a case, a third layer to be formed later may be formed while leaving the remaining light absorption layer. Further, after the remaining light absorption layer is removed by dry etching or wet etching, a third layer to be formed later may be formed.

  Next, as shown in FIG. 4, a third layer is formed in the opening. As the third layer, an insulating layer, a semiconductor layer, or a conductive layer can be formed as appropriate. Here, the source wiring 131 and the drain electrode 132 are formed as the third layer.

  The source wiring 131 and the drain electrode 132 are formed of aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt) by CVD or sputtering. ), Copper (Cu), gold (Au), silver (Ag), manganese (Mn), neodymium (Nd), carbon (C), silicon (Si), or these elements as main components An alloy material or a compound material to be formed is a single layer or a laminated layer. Here, a titanium layer, an aluminum layer, and a titanium layer are continuously formed by a sputtering method.

  Through the above steps, an opening can be formed in the interlayer insulating layer 113. In addition, a thin film transistor and a wiring connected to the thin film transistor can be formed.

  Next, as shown in FIG. 5, a pixel electrode 142 in contact with the drain electrode 132 of the thin film transistor is formed.

  By forming a light-transmitting conductive layer using the same material as the gate wiring 112 as the pixel electrode 142, a transmissive liquid crystal display panel can be manufactured later. Further, a reflective liquid crystal display panel is manufactured later by forming a conductive layer having reflectivity such as Ag (silver), Au (gold), Cu (copper), W (tungsten), Al (aluminum). Can do. Furthermore, a semi-transmissive liquid crystal display panel can be manufactured by forming the light-transmitting conductive layer and the reflective conductive layer for each pixel. Here, ITO containing silicon oxide is formed by a sputtering method.

  Through the above steps, an active matrix substrate of a liquid crystal display device can be manufactured.

  According to this embodiment, by selectively irradiating a region where a plurality of light absorption layers are formed with a linear laser beam, the plurality of light absorption layers and the insulating layers formed on the plurality of light absorption layers are formed. It can be removed to form a plurality of openings. In addition, a semiconductor device can be manufactured at low cost.

(Embodiment 2)
In this embodiment mode, a method for forming an opening portion in an insulating layer formed over a substrate in a pixel portion where pixels including display elements are arranged in a matrix by a process different from that in Embodiment Mode 1 is described with reference to FIG. A description will be given using FIGS. The present embodiment is different from the first embodiment in the process of removing the light absorption layer using a laser beam. 6 to 10 are a top view and a cross-sectional view showing a step of forming an opening in an insulating layer formed on the substrate. FIGS. 6B to 10B are cross-sectional views taken along line AB of FIGS. 6A to 10A, respectively.

  In this embodiment mode, description is made using a mode in which a plurality of light absorption layers are irradiated with a linear laser beam in a direction intersecting with a source wiring in a pixel portion in which pixels including display elements are arranged in a matrix. To do.

  As shown in FIG. 6, as in Embodiment Mode 1, a first layer 102 is formed over a substrate 101, a semiconductor layer is formed as a second layer 103 over the first layer 102, and the semiconductor layer Then, the light absorption layer 104 is formed.

  In this embodiment mode, in order to avoid the gate wiring and the opening formed later from being aligned in a straight line, the shape of the semiconductor layer is a U-shape as illustrated in FIG. A light absorption layer 104 is formed at an end portion of the semiconductor layer.

  Next, as illustrated in FIG. 7, as in Embodiment Mode 1, a gate insulating layer is used as a light-transmitting layer over the first layer 102, the second layer 103, and the light absorption layer 104. A layer 111, a gate wiring 151, and an interlayer insulating layer 113 are sequentially formed.

  In this embodiment, the gate wiring 151 can be formed using a light-transmitting conductive layer, a light-absorbing conductive layer, a light-reflecting conductive layer, or the like as appropriate. In addition, the gate wiring 151 is preferably formed using a conductive layer with low resistivity. As the conductive layer having a low resistivity, an element selected from tantalum (Ta), titanium (Ti), molybdenum (Mo), and tungsten (W), an alloy containing the element as a main component, and an alloy film combining the elements (Typically, a Mo—W alloy film or a Mo—Ta alloy film) or a silicon film provided with conductivity may be used. For example, a stacked structure of a silicon layer and a germanium layer may be used. Here, a tungsten layer having a thickness of 200 to 500 nm, preferably 300 to 400 nm, is formed as the gate wiring 151 by a sputtering method.

  Next, the light-absorbing layer 104 is irradiated with a laser beam 152 in a region where the light-transmitting layer, here the gate insulating layer 111, the interlayer insulating layer 113, and the light-absorbing layer 104 overlaps. As the laser beam 152, a laser beam having the same conditions as the laser beam 114 used in Embodiment 1 can be used.

  In this embodiment mode, the laser beam 152 is irradiated in a direction parallel to the gate wiring 151. Alternatively, the light absorption layer 104 is selectively irradiated with a laser beam so that the gate wiring 151 is not irradiated with the laser beam 152.

  Note that in this embodiment, when the plurality of light absorption layers 104 are irradiated with the linear laser beams 152, the plurality of light absorption layers and the light-transmitting layer in contact with the light absorption layers are scattered. 8 shows a form in which the opening 121 is formed. Further, a plurality of light absorption layers 104 are irradiated with a linear laser beam 152, and an upper layer portion and a light-transmitting layer of the light absorption layer 104 are scattered, and a lower layer portion of the light absorption layer 104 is a second layer. 103 may remain. In such a case, a third layer to be formed later may be formed while leaving the remaining light absorption layer. Alternatively, the remaining light absorption layer 104 may be removed by dry etching or wet etching to expose the second layer 103, and then a third layer to be formed later may be formed.

  In some cases, only the light-transmitting layer in contact with the light absorption layer 104 is removed by irradiation with the laser beam 152. In such a case, a third layer to be formed later may be formed while leaving the remaining light absorption layer 104. Further, after removing the remaining light absorption layer 104 by dry etching or wet etching, a third layer to be formed later may be formed.

  Next, as illustrated in FIG. 9, the third layer and the fourth layer are formed in the opening 121. As the third layer and the fourth layer, an insulating layer, a semiconductor layer, and a conductive layer can be formed as appropriate. Here, the source wiring 161 is formed as the third layer, and the drain electrode 162 is formed as the fourth layer. Further, in order to form an opening on the drain electrode 162 later using a laser beam, the drain electrode 162 is formed as a light absorption layer here. Further, when the opening is formed over the drain electrode 162, it is not necessary to form the opening over the source wiring 161; therefore, the source wiring 161 is formed using a light-transmitting conductive layer.

  The source wiring 161 can be formed in a manner similar to that of the gate wiring 112 described in Embodiment 1. Further, an auxiliary wiring formed using a low resistivity conductive layer may be formed over the source wiring 161.

  The drain electrode 162 can be formed in a manner similar to that of the source wiring 131 and the drain electrode 132 described in Embodiment 1.

  Next, a light-transmitting layer 163 is formed over the source wiring 161, the drain electrode 162, and the interlayer insulating layer 123. Here, as the light-transmitting layer 163, an insulating layer having a light-transmitting property is formed using a material similar to that of the interlayer insulating layer 113.

  Next, a part of the drain electrode 162 is irradiated with the laser beam 164, and as illustrated in FIG. 10A, part of the drain electrode 162 and part of the light-transmitting layer are removed, and the opening 140 is formed. A light-transmitting layer 141 having the above can be formed.

  Next, the pixel electrode 142 is formed in the opening 140.

  Through the above steps, an active matrix substrate of a liquid crystal display device can be manufactured.

  According to this embodiment, by selectively irradiating a region where a plurality of light absorption layers are formed with a linear laser beam, the plurality of light absorption layers and the insulating layers formed on the plurality of light absorption layers are formed. It can be removed to form a plurality of openings. In addition, a semiconductor device can be manufactured at low cost.

  In this embodiment, a liquid crystal display device which is an example of a semiconductor device will be described with reference to FIGS.

  As shown in FIG. 11A, thin film transistors 225 to 227 are formed over the substrate 101. Note that the above embodiment mode can be used as appropriate for a method for forming the opening for connecting the wirings 234 to 239 of the thin film transistors 225 to 227 and the semiconductor film. In this embodiment, the gate electrodes of the thin film transistors 225 to 227 are formed in a two-layer structure. Here, after forming a tantalum nitride film with a thickness of 30 nm and a tungsten film with a thickness of 370 nm on the gate insulating film by a sputtering method, a tantalum nitride film and a tungsten film using a resist mask formed by a photolithography process. Is selectively etched to form a gate electrode having a shape in which the end of the tantalum nitride film protrudes outward from the end of the tungsten film. The above embodiment is applied as appropriate to other structures of the thin film transistor.

  Next, as shown in FIG. 11A, a first interlayer insulating film for insulating the gate electrodes and wirings of the thin film transistors 225 to 227 is formed. Here, a silicon oxide film 231, a silicon nitride film 232, and a silicon oxide film 233 are stacked as the first interlayer insulating film. After the opening is formed in the first interlayer insulating film using the above embodiment mode, the opening is connected to the source region and the drain region of the thin film transistors 225 to 227 over the silicon oxide film 233 which is a part of the first interlayer insulating film. Wirings 234 to 239 and connection terminals 240 to be formed are formed. Here, a Ti film 100 nm, an Al film 333 nm, and a Ti film 100 nm are successively formed by a sputtering method, and then selectively etched using a resist mask formed by a photolithography process, so that the wirings 234 to 239 and A connection terminal 240 is formed. Thereafter, the resist mask is removed.

  Next, a second interlayer insulating film 241 is formed over the first interlayer insulating film, the wirings 234 to 239, and the connection terminal 240. As the second interlayer insulating film 241, an inorganic insulating film such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film can be used. If these insulating films are formed of a single layer or two or more layers, Good. As a method for forming the inorganic insulating film, a sputtering method, an LPCVD method, a plasma CVD method, or the like may be used. Here, after a silicon nitride film containing oxygen having a thickness of 100 nm to 150 nm is formed by a plasma CVD method, the silicon nitride film containing oxygen is selectively etched according to the above embodiment, so that the wiring 239 of the thin film transistor 227 is obtained. In addition, an opening reaching the connection terminal 240 is formed, and a second interlayer insulating film 241 is formed.

  By forming the second interlayer insulating film 241 as in this embodiment, exposure of TFTs and wirings in the driver circuit portion can be prevented and the TFTs can be protected from contaminants.

  Next, a pixel electrode 242 connected to the wiring 239 of the thin film transistor 227 and a conductive film 244 connected to the connection terminal 240 are formed. In the case where the liquid crystal display device is a light-transmitting liquid crystal display device, the pixel electrode 242 is formed using a light-transmitting conductive film. In the case where the liquid crystal display device is a reflective liquid crystal display device, the pixel electrode 242 is formed using a reflective conductive film. Here, the pixel electrode 242 and the conductive film 244 are formed by selectively etching using a resist mask formed by a photolithography process after forming an ITO film containing silicon oxide with a thickness of 125 nm by a sputtering method.

  Next, an insulating film 243 that functions as an alignment film is formed. The insulating film 243 can be formed by rubbing after a polymer compound film such as polyimide or polyvinyl alcohol is formed by a roll coating method, a printing method, or the like. Moreover, SiO can be formed by vapor deposition with respect to the substrate. Further, it can be formed by irradiating a photoreactive polymer compound with polarized UV light and polymerizing the photoreactive polymer compound. Here, a polymer compound film such as polyimide or polyvinyl alcohol is printed by printing, baked and then rubbed.

  Next, as illustrated in FIG. 11B, the counter electrode 253 is formed over the counter substrate 251, and the insulating film 254 that functions as an alignment film is formed over the counter electrode 253. Note that a colored film 252 may be provided between the counter substrate 251 and the counter electrode 253.

  As the counter substrate 251, a substrate similar to the substrate 101 can be selected as appropriate. The counter electrode 253 is formed using a light-transmitting conductive film. The insulating film 254 functioning as an alignment film can be formed in a manner similar to that of the insulating film 243. The colored film 252 is a film necessary for color display. In the case of the RGB system, a colored film in which dyes and pigments corresponding to red, green, and blue colors are dispersed is associated with each pixel. Form.

  Next, the substrate 101 and the counter substrate 251 are attached to each other with a sealant 257. In addition, a liquid crystal layer 255 is formed between the substrate 101 and the counter substrate 251. The liquid crystal layer 255 can be formed by injecting a liquid crystal material into a region surrounded by the insulating films 243 and 254 functioning as alignment films and the sealant 257 by a vacuum injection method using a capillary phenomenon. . In addition, a sealant 257 is formed on one of the counter substrates 251, and a liquid crystal material is dropped on a region surrounded by the sealant, and then the counter substrate 251 and the substrate 101 are pressure-bonded with the sealant under reduced pressure, whereby the liquid crystal layer 255 Can be formed.

  As the sealant 257, a thermosetting epoxy resin, a UV curable acrylic resin, thermoplastic nylon, polyester, or the like can be formed using a dispenser method, a printing method, a thermocompression bonding method, or the like. Note that the distance between the substrate 101 and the counter substrate 251 can be maintained by spraying a filler over the sealant 257. Here, the sealant 257 is formed using a thermosetting epoxy resin.

  Further, a spacer 256 may be provided between the insulating films 243 and 254 functioning as alignment films in order to maintain a distance between the substrate 101 and the counter substrate 251. The spacer can be formed by applying an organic resin and etching the organic resin into a desired shape, typically a columnar shape or a cylindrical shape. Further, a bead spacer may be used as the spacer. Here, a bead spacer is used as the spacer 256.

  Although not illustrated, a polarizing plate is provided on one or both of the substrate 101 and the counter substrate 251.

  Next, as illustrated in FIG. 11C, the terminal portion 263 is connected to the gate wiring and the source wiring of the thin film transistor (in FIG. 11C, connected to the source wiring or the drain wiring. Connection terminal 240 is shown). An FPC (flexible printed wiring) 262 serving as an input terminal portion is connected to the connection terminal 240 through the conductive film 244 and the anisotropic conductive film 261. The connection terminal 240 receives a video signal and a clock signal through the conductive film 244 and the anisotropic conductive film 261.

  In the driver circuit portion 264, a circuit for driving pixels such as a source driver and a gate driver is formed. Here, an n-channel thin film transistor 226 and a p-channel thin film transistor 225 are provided. Note that the n-channel thin film transistor 226 and the p-channel thin film transistor 225 form a CMOS circuit.

  A plurality of pixels are formed in the pixel portion 265, and a liquid crystal element 258 is formed in each pixel. The liquid crystal element 258 is a portion where the pixel electrode 242, the counter electrode 253, and the liquid crystal layer 255 filled therebetween overlap. A pixel electrode 242 included in the liquid crystal element 258 is electrically connected to the thin film transistor 227.

  Through the above process, a liquid crystal display device can be manufactured.

  Although FIG. 11 shows a TN liquid crystal display panel, the method for forming an opening of the present invention can be similarly applied to other types of liquid crystal display panels. For example, the present embodiment can be applied to a horizontal electric field type liquid crystal display panel in which an electric field is applied in parallel with a glass substrate to align liquid crystals. Further, the present embodiment can be applied to a VA (Vertical Alignment) liquid crystal display panel.

  13 and 14 show a pixel structure of a VA liquid crystal display panel. FIG. 13 is a plan view, and FIG. 14 shows a cross-sectional structure corresponding to the cutting line I-J shown in the figure. The following description will be given with reference to both the drawings. 13 to 14 show an example in which an inverted staggered thin film transistor is used as the thin film transistor.

  In this pixel structure, a single pixel has a plurality of pixel electrodes, and a TFT is connected to each pixel electrode. Each TFT is configured to be driven by a different gate signal. That is, a pixel designed for a multi-domain has a configuration in which a signal applied to each pixel electrode is controlled independently.

  The pixel electrode 1624 is connected to the TFT 1628 through a wiring 1618 through an opening 1623. Further, the pixel electrode 1626 is connected to the TFT 1629 through a wiring 1619 through an opening 1627. The gate wiring 1602 of the TFT 1628 and the gate electrode 1603 of the TFT 1629 are separated so that different gate signals can be given. On the other hand, the wiring 1616 functioning as a data line is used in common by the TFT 1628 and the TFT 1629.

  The pixel electrode 1624 and the pixel electrode 1626 have different shapes and are separated by a slit 1625. A pixel electrode 1626 is formed so as to surround the outside of the V-shaped pixel electrode 1624. The timing of the voltage applied to the pixel electrode 1624 and the pixel electrode 1626 is varied depending on the TFT 1628 and the TFT 1629, thereby controlling the alignment of the liquid crystal. A counter substrate 1601 is provided with a light-blocking film 1632, a colored layer 1636, and a counter electrode 1640. In addition, a planarization film 1637 is formed between the coloring layer 1636 and the counter electrode 1640 to prevent alignment disorder of the liquid crystal.

  FIG. 15 shows a structure on the counter substrate side. The counter electrode 1640 is an electrode shared by different pixels, but a slit 1641 is formed. By arranging the slits 1641 and the slits 1625 on the pixel electrode 1624 side and the pixel electrode 1626 side to alternately engage with each other, an oblique electric field can be effectively generated to control the alignment of the liquid crystal. Thereby, the direction in which the liquid crystal is aligned can be varied depending on the location, and the viewing angle is widened.

  Note that a protection circuit for preventing electrostatic breakdown, typically a diode or the like, may be provided between the connection terminal and the source wiring (gate wiring) or in the pixel portion. In this case, it is possible to prevent electrostatic breakdown by manufacturing in the same process as the above TFT and connecting the gate wiring of the pixel portion and the drain or source wiring of the diode.

Further, this embodiment can be freely combined with the above embodiment as appropriate.

According to this embodiment, the process of forming the opening in the semiconductor device can be performed with a simple process. In addition, a semiconductor device can be manufactured at low cost.

  In this example, a manufacturing process of a light-emitting device having a light-emitting element which is an example of a semiconductor device will be described.

  As shown in FIG. 12A, thin film transistors 225 to 227 are formed over the substrate 101 with the first layer 102 interposed therebetween as in Example 1. Further, a silicon oxide film 231, a silicon nitride film 232, and a silicon oxide film 233 are stacked as a first interlayer insulating film that insulates the gate electrodes and wirings of the thin film transistors 225 to 227. In addition, after the opening is formed in the first interlayer insulating film according to the above embodiment, the wirings 308 to 308 connected to the semiconductor films of the thin film transistors 225 to 227 are formed on the silicon oxide film 233 which is a part of the first interlayer insulating film. 313 and a connection terminal 314 are formed.

  Next, a second interlayer insulating film 315 is formed over the first interlayer insulating film, the wirings 308 to 313, and the connection terminal 314. Next, a first electrode 316 connected to the wiring 313 of the thin film transistor 227 and a conductive film 320 connected to the connection terminal 314 are formed. The first electrode 316 and the conductive film 320 are formed by depositing ITO containing 125 nm thick silicon oxide by a sputtering method and then selectively etching the resist using a resist mask formed by a photolithography process.

  By forming the second interlayer insulating film 315 as in this embodiment, exposure of TFTs and wirings in the driver circuit portion can be prevented and the TFTs can be protected from contaminants.

  Next, an organic insulating film 317 that covers an end portion of the first electrode 316 is formed. Here, after applying and baking photosensitive polyimide, exposure and development are performed so that the driver circuit, the first electrode 316 in the pixel region, and the second interlayer insulating film 315 in the peripheral portion of the pixel region are exposed. Then, an organic insulating film 317 is formed.

  Next, a layer 318 containing a light-emitting substance is formed over the first electrode 316 and part of the organic insulating film 317 by an evaporation method. The layer 318 containing a light-emitting substance is formed using a light-emitting organic compound or a light-emitting inorganic compound. Alternatively, the layer 318 containing a light-emitting substance may be formed using a light-emitting organic compound and a light-emitting inorganic compound. The layer 318 containing a light-emitting substance is formed using a red light-emitting light-emitting substance, a blue light-emitting light-emitting substance, and a green light-emitting light-emitting substance, respectively. Pixels and green light-emitting pixels can be formed.

Here, as a layer containing a red light-emitting substance, DNTPD is 50 nm, NPB is 10 nm, bis [2,3-bis (4-fluorophenyl) quinoxalinato] iridium (acetylacetonato) (abbreviation: Ir (Fdpq ) ₂ (acac)) is added to 30 nm, Alq ₃ to 60 nm, and LiF to 1 nm.

The layer containing a green light-emitting luminescent material, a 50 nm, 10 nm and NPB, coumarin 545T (C545T) 40 nm of Alq ₃ that is added to form 60nm of Alq _3, and LiF was 1nm laminated DNTPD .

In addition, as a layer containing a blue light-emitting substance, DNTPD is 50 nm, NPB is 10 nm, 2,5,8,11-tetra (tert-butyl) perylene (abbreviation: TBP) is added, and 9- [ 4- (N-carbazolyl)] phenyl-10-phenylanthracene (abbreviation: CzPA (:)) is 30 nm, Alq ₃ is 60 nm, and LiF is 1 nm stacked.

  Furthermore, in addition to the red light emitting pixel, the blue light emitting pixel, and the green light emitting pixel, a white light emitting light emitting material is used to form a layer containing a light emitting material, thereby producing a white Alternatively, a light-emitting pixel may be formed. By providing white light-emitting pixels, power consumption can be reduced.

  Next, a second electrode 319 is formed over the layer 318 containing a light-emitting substance and the organic insulating film 317. Here, an Al film having a thickness of 200 nm is formed by an evaporation method. As a result, the light-emitting element 321 is formed by the first electrode 316, the layer 318 containing a light-emitting substance, and the second electrode 319.

  Note that although a layer including a light-emitting substance is formed using an organic compound here, the present invention is not limited to this. For example, a layer containing a light-emitting substance may be formed using an inorganic compound. Furthermore, a layer containing a light-emitting substance may be formed by stacking an organic compound and an inorganic compound.

  Next, as shown in FIG. 12B, a protective film 322 is formed over the second electrode 319. The protective film 322 is for preventing moisture, oxygen, and the like from entering the light emitting element 321 and the protective film 322. The protective film 322 uses a thin film formation method such as a plasma CVD method or a sputtering method, and includes silicon nitride, silicon oxide, silicon nitride oxide, silicon oxynitride, aluminum oxynitride, or aluminum oxide, diamond-like carbon (DLC), and nitrogen content It is preferable to use carbon (CN) or another insulating material.

  Further, the sealing substrate 324 is bonded to the second interlayer insulating film 315 formed over the substrate 101 with the sealing material 323, thereby emitting light to the space 325 surrounded by the substrate 101, the sealing substrate 324, and the sealing material 323. The element 321 is provided. Note that the space 325 is filled with a filler and may be filled with a sealant 323 in addition to an inert gas (such as nitrogen or argon).

  Note that an epoxy-based resin is preferably used for the sealant 323. Moreover, it is desirable that these materials are materials that do not transmit moisture and oxygen as much as possible. In addition to a glass substrate or a quartz substrate, a plastic substrate made of FRP (Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride), polyester film, polyester, acrylic, or the like can be used as a material for the sealing substrate 324.

  Next, as illustrated in FIG. 12C, the FPC 327 is attached to the conductive film 320 in contact with the connection terminal 314 using the anisotropic conductive film 326 similarly to the first embodiment.

  Through the above steps, a semiconductor device having an active matrix light-emitting element can be formed.

  Here, in the light-emitting display panel including the light-emitting element illustrated in FIG. 12C, the case where light is emitted to the substrate 101 side, that is, the case where downward emission is performed is described with reference to FIG. In this case, the light-transmitting conductive layer 484, the light-emitting substance-containing layer 485, and the light-blocking or reflective conductive layer 486 are in contact with the source or drain electrode 187 so as to be electrically connected to the thin film transistor 188. Are sequentially stacked. The substrate 101 through which light is transmitted needs to be transparent to at least light in the visible region.

  Next, a case where light is emitted to the side opposite to the substrate 101, that is, a case where upward emission is performed will be described with reference to FIG. The thin film transistor 188 can be formed in a manner similar to that of the thin film transistor described above. A source or drain electrode 187 is formed in contact with the conductive layer 463 having a light shielding property or a reflective property so as to be electrically connected to the thin film transistor 188. A conductive layer 463 having a light-blocking property or a reflective property, a layer 464 containing a light-emitting substance, and a conductive layer 465 having a light-transmitting property are sequentially stacked. The conductive layer 463 is a light-blocking or reflective metal layer, and emits light emitted from the light-emitting element above the light-emitting element as indicated by an arrow. Note that a light-transmitting conductive layer may be formed over the light-blocking or reflective conductive layer 463. Light emitted from the light-emitting element is emitted through the conductive layer 465.

  Next, a case where light is emitted to both the substrate 101 side and the opposite side, that is, a case where both light emission is performed will be described with reference to FIG. A first light-transmitting conductive layer 472 is electrically connected to the source or drain electrode 187 which is electrically connected to the semiconductor film of the thin film transistor 188. A conductive layer 472 having a first light-transmitting property, a layer 473 containing a light-emitting substance, and a conductive layer 474 having a second light-transmitting property are sequentially stacked. At this time, when each of the first light-transmitting conductive layer 472 and the second light-transmitting conductive layer 474 is formed with a light-transmitting material or a thickness capable of transmitting light at least in the visible region. Both radiant emission is realized. In this case, the insulating film that transmits light and the substrate 101 also need to have a light-transmitting property with respect to at least light in the visible region.

  In the light-emitting device, a driving method for screen display is not particularly limited, and for example, a dot sequential driving method, a line sequential driving method, a surface sequential driving method, or the like may be used. Typically, a line sequential driving method is used, and a time-division gray scale driving method or an area gray scale driving method may be used as appropriate. The video signal input to the source line of the light-emitting device may be an analog signal or a digital signal, and a drive circuit or the like may be designed in accordance with the video signal as appropriate.

  Note that although an inverted staggered thin film transistor is used as the thin film transistor 188 in FIG. 16, a top-gate thin film transistor can be used as appropriate.

  Further, in a light emitting device in which a video signal is digital, there are a video signal input to a pixel having a constant voltage (CV) and a constant current (CC). A video signal having a constant voltage (CV) includes a signal having a constant voltage applied to the light emitting element (CVCV) and a signal having a constant current applied to the light emitting element (CVCC). . In addition, when the video signal has a constant current (CC), the signal voltage applied to the light emitting element is constant (CCCV), and the signal applied to the light emitting element has a constant current (CCCC). There is.

  In the case where the layer containing a light-emitting substance is formed using an inorganic compound, the layer can be driven using either DC driving or AC driving.

  In the light emitting device, a protection circuit (such as a protection diode) for preventing electrostatic breakdown may be provided.

  Through the above process, a light-emitting device having an active matrix light-emitting element can be manufactured. The light-emitting device described in this embodiment can be formed by a simple opening formation process. In addition, a semiconductor device can be manufactured at low cost.

  In this embodiment, a typical example of a semiconductor device will be described with reference to FIGS. An electrophoretic element is a microcapsule in which a positive and negative charged black and white particle is confined between a first conductive layer and a second conductive layer. This is an element that performs display by causing a potential difference in the second conductive layer to move black and white particles between electrodes.

  As shown in FIG. 17, a thin film transistor 188 and an insulating film 191 having an opening are formed over the substrate 101 so as to cover the thin film transistor 188. Note that the opening is formed using the above embodiment mode.

  Next, a first conductive layer 1171 connected to the source wiring or drain wiring of the thin film transistor is formed. Note that the first conductive layer 1171 functions as a pixel electrode. Here, the first conductive layer 1171 is formed using aluminum.

  In addition, a second conductive layer 1173 is formed over the substrate 1172. Here, the second conductive layer 1173 is formed using ITO.

  Next, the substrate 101 and the substrate 1172 are attached to each other with a sealant. At this time, the microcapsules 1170 are dispersed between the first conductive layer 1171 and the second conductive layer 1173, so that an electrophoretic element is formed between the substrate 101 and the substrate 1172. The electrophoretic element includes a first conductive layer 1171, a microcapsule 1170, and a second conductive layer 1173. The microcapsule 1170 is fixed between the first conductive layer 1171 and the second conductive layer 1173 by a binder.

  Next, the structure of the microcapsule will be described with reference to FIG. As shown in FIGS. 18A and 18B, in the microcapsule 1170, a transparent dispersion medium 1176, charged black particles 1175a, and white particles 1175b are enclosed in a fine transparent container 1174. Instead of the black particles 1175a, blue particles, red particles, green particles, yellow particles, blue-green particles, red purple particles, or the like may be used. Further, as shown in FIGS. 18C and 18D, a microcapsule 1330 in which a colored dispersion medium 1333 and white particles 1332 are enclosed in a fine transparent container 1331 may be used. Note that the colored dispersion medium 1333 is colored in any of black, blue, red, green, yellow, blue-green, red purple, and the like. Further, by providing each pixel with a microcapsule in which blue particles are dispersed, a microcapsule in which red particles are dispersed, and a microcapsule in which green particles are dispersed, color display can be performed. In addition, color display can be performed by providing a microcapsule in which yellow particles are dispersed, a microcapsule in which blue-green particles are dispersed, and a microcapsule in which red-violet particles are dispersed. In addition, a microcapsule in which white particles or black particles are dispersed in a blue dispersion medium, a microcapsule in which white particles or black particles are dispersed in a red dispersion medium, a white particle or By providing each of the microcapsules in which black particles are dispersed, color display can be performed. In addition, a microcapsule in which white particles or black particles are dispersed in a yellow dispersion medium in one pixel, a microcapsule in which white particles or black particles are dispersed in a blue-green dispersion medium, white particles or black in a magenta dispersion medium By providing each of the microcapsules in which the particles are dispersed, color display can be performed.

  Next, a display method using an electrophoretic element will be described. Specifically, a display method of the microcapsule 1170 having two-color particles is described with reference to FIGS. Here, a microcapsule using white particles and black particles as two-color particles and having a transparent dispersion medium is shown. Note that particles of other colors may be used instead of the black particles of the two colors.

  In the microcapsule 1170, it is assumed that the black particles 1175a are positively charged and the white particles 1175b are negatively charged, and a voltage is applied to the first conductive layer 1171 and the second conductive layer 1173. Here, as shown by an arrow, when an electric field is generated in the direction from the second conductive layer to the first conductive layer, as shown in FIG. 18A, black particles 1175a are formed on the second conductive layer 1173 side. Migrate and white particles 1175b migrate to the first conductive layer 1171 side. As a result, when the microcapsule is viewed from the first conductive layer 1171 side, it is observed as white, and when viewed from the second conductive layer 1173 side, it is observed as black.

  On the other hand, when a voltage is applied in the direction from the first conductive layer 1171 to the second conductive layer 1173 as indicated by an arrow, the black color appears on the first conductive layer 1171 side as shown in FIG. The particles 1175a migrate, and the white particles 1175b migrate to the second conductive layer 1173 side. As a result, when the microcapsule is viewed from the first conductive layer 1171 side, it is observed as black, and when viewed from the second conductive layer 1173 side, it is observed as white.

  Next, a display method of the microcapsule 1330 including white particles and a colored dispersion medium is described. Here, an example in which the dispersion medium is colored in black is shown, but the same applies even when a dispersion medium colored in another color is used.

  In the microcapsule 1330, it is assumed that the white particles 1332 are negatively charged, and a voltage is applied to the first conductive layer 1171 and the second conductive layer 1173. Here, when an electric field is generated in the direction from the second conductive layer to the first conductive layer as indicated by an arrow, white particles 1332 are formed on the first conductive layer 1171 side as illustrated in FIG. Migrate. As a result, when the microcapsule is viewed from the first conductive layer 1171 side, it is observed as white, and when viewed from the second conductive layer 1173 side, it is observed as black.

  On the other hand, when an electric field is generated in the direction from the first conductive layer to the second conductive layer as indicated by an arrow, white particles 1332 are formed on the second conductive layer 1173 side as shown in FIG. Run. As a result, the microcapsule is observed in black when viewed from the first conductive layer 1171 side, and is observed in white when viewed from the second conductive layer 1173 side.

Here, the electrophoretic element has been described, but a display device using a twisting ball display method may be used instead. In the twisting ball display method, spherical particles that are separately painted in white and black are arranged between the first conductive layer and the second conductive layer, and a potential difference is generated between the first conductive layer and the second conductive layer. In this method, display is performed by controlling the orientation of the spherical particles.

  Further, instead of a thin film transistor, a MIM (Metal-Insulator-Metal), a diode, or the like can be used as a switching element.

  A display device having an electrophoretic element or a display device using a twisting ball display system maintains the same state as when a voltage is applied for a long time after the power is turned off. Thus, the display state can be maintained even when the power is turned off. For this reason, low power consumption is possible.

  Through the above steps, a semiconductor device including an electrophoretic element can be manufactured. The semiconductor device described in this embodiment can be formed by a simple opening formation process. In addition, a semiconductor device can be manufactured at low cost.

  In display panels (light-emitting display panels, liquid crystal display panels, and electrophoretic display panels) manufactured according to Embodiments 1 to 3, a semiconductor film is formed using an amorphous semiconductor or semi-amorphous silicon (SAS), and the scanning line side An example in which a drive circuit is formed on a substrate is shown.

FIG. 19 shows a block diagram of a scanning line side driving circuit constituted by an n-channel TFT using SAS capable of obtaining a field effect mobility of 1 to 15 cm ² / V · sec.

  In FIG. 19, a block denoted by reference numeral 8500 corresponds to a pulse output circuit that outputs a sampling pulse for one stage, and the shift register includes n pulse output circuits. Reference numeral 8501 denotes a buffer circuit to which a pixel 8502 is connected.

  FIG. 20 shows a specific structure of the pulse output circuit 8500, and the circuit is composed of n-channel TFTs 8601-8613. At this time, the size of the TFT may be determined in consideration of the operating characteristics of the n-channel TFT using SAS. For example, if the channel length is 8 μm, the channel width can be set in the range of 10 to 80 μm.

  A specific configuration of the buffer circuit 8501 is shown in FIG. Similarly, the buffer circuit includes n-channel TFTs 8620 to 8635. At this time, the size of the TFT may be determined in consideration of the operating characteristics of the n-channel TFT using SAS. For example, if the channel length is 10 μm, the channel width is set in the range of 10 to 1800 μm.

  In order to realize such a circuit, it is necessary to connect the TFTs by wiring.

  As described above, a driver circuit can be incorporated in the display panel.

  Next, a module having the display panel shown in the above embodiment will be described with reference to FIG. FIG. 22 shows a module in which a display panel 9801 and a circuit board 9802 are combined. On the circuit board 9802, for example, a control circuit 9804, a signal dividing circuit 9805, and the like are formed. In addition, the display panel 9801 and the circuit board 9802 are connected by a connection wiring 9803. As the display panel 9801, a liquid crystal display panel, a light-emitting display panel, an electrophoretic display panel, or the like as described in Embodiments 1 to 3 can be used as appropriate.

  This display panel 9801 includes a pixel portion 9806 in which a light-emitting element is provided in each pixel, a scanning line driver circuit 9807, and a signal line driver circuit 9808 that supplies a video signal to a selected pixel. The configuration of the pixel portion 9806 is the same as in Embodiments 1 to 3. The scan line driver circuit 9807 and the signal line driver circuit 9808 are a mounting method using an anisotropic conductive adhesive or an anisotropic conductive film, a COG method, a wire bonding method, a reflow process using a solder bump, or the like. By the method described above, a scanning line driver circuit 9807 and a signal line driver circuit 9808 formed with IC chips are mounted on a substrate.

  Note that part of the signal line driver circuit 9808, for example, an analog switch may be formed using a thin film transistor over a substrate, and the other part may be separately mounted using an IC chip.

  According to this embodiment, a module having a display panel can be formed with high yield.

  As an electronic device including the semiconductor device described in any of the above embodiments and examples, a television device (also simply referred to as a television or a television receiver), a digital camera, a digital video camera, a mobile phone device (simply a mobile phone, a mobile phone) (Also called a telephone), portable information terminals such as PDAs, portable game machines, computer monitors, computers, sound reproduction apparatuses such as car audio, and image reproduction apparatuses equipped with recording media such as home game machines. . A specific example will be described with reference to FIG.

  A portable information terminal illustrated in FIG. 23A includes a main body 9201, a display portion 9202, and the like. By applying the above embodiment to the display portion 9202, a portable information terminal can be provided at low cost.

  A digital video camera shown in FIG. 23B includes a display portion 9701, a display portion 9702, and the like. By applying the above embodiment to the display portion 9701, a digital video camera can be provided at low cost.

  A portable terminal illustrated in FIG. 23C includes a main body 9101, a display portion 9102, and the like. By applying the above embodiment to the display portion 9102, a portable terminal can be provided at low cost.

  A portable television device shown in FIG. 23D includes a main body 9301, a display portion 9302, and the like. By applying the above embodiment to the display portion 9302, a portable television device can be provided at low cost. Such a television device can be widely applied from a small one mounted on a portable terminal such as a cellular phone to a medium-sized one that can be carried and a large one (for example, 40 inches or more). .

  A portable computer shown in FIG. 23E includes a main body 9401, a display portion 9402, and the like. By applying the above embodiment to the display portion 9402, a portable computer can be provided at low cost.

  A television device illustrated in FIG. 23F includes a main body 9501, a display portion 9502, and the like. By applying the above embodiment to the display portion 9502, a television device can be provided at low cost.

  Here, the structure of the television device will be described with reference to FIG.

  FIG. 24 is a block diagram illustrating a main configuration of a television device. A tuner 9511 receives a video signal and an audio signal. The video signal includes a video detection circuit 9512, a video signal processing circuit 9513 that converts the signal output from the video signal into a color signal corresponding to each color of red, green, and blue, and converts the video signal into the input specifications of the driver IC. Is processed by a control circuit 9514. The control circuit 9514 outputs signals to the scan line driver circuit 9516 and the signal line driver circuit 9517 of the display panel 9515, respectively. In the case of digital driving, a signal dividing circuit 9518 may be provided on the signal line side so that an input digital signal is divided into m pieces and supplied.

  Of the signals received by the tuner 9511, the audio signal is sent to the audio detection circuit 9521, and the output is supplied to the speaker 9523 through the audio signal processing circuit 9522. The control circuit 9524 receives control information on the receiving station (reception frequency) and volume from the input unit 9525 and sends a signal to the tuner 9511 and the audio signal processing circuit 9522.

  This television device includes the display panel 9515, whereby low power consumption of the television device can be achieved. In addition, a television device capable of high-definition display can be manufactured.

  Note that the present invention is not limited to a television receiver, and is applicable to various uses as a display medium of a particularly large area such as a monitor of a personal computer, an information display board in a railway station or airport, an advertisement display board in a street, etc. can do.

8A to 8C are a top view and cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8C are a top view and cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8C are a top view and cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8C are a top view and cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8C are a top view and cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8C are a top view and cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8C are a top view and cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8C are a top view and cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8C are a top view and cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8C are a top view and cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8D are cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8D are cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8D are top views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8D are cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8D are top views illustrating a method for manufacturing a semiconductor device of the present invention. It is a figure explaining the cross-section of the light emitting element which can be applied to this invention. 8A to 8D are cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. It is a figure explaining the cross-sectional structure of the electrophoretic element which can be applied to this invention. FIG. 11 is a diagram illustrating a circuit configuration when a scanning line side driving circuit is formed using TFTs in the display panel of the present invention. FIG. 11 is a diagram (shift register circuit) illustrating a circuit configuration in a case where a scanning line side driving circuit is formed using TFTs in the display panel of the present invention. FIG. 11 is a diagram (buffer circuit) illustrating a circuit configuration when a scanning line side driving circuit is formed using TFTs in the display panel of the present invention. It is a top view illustrating a semiconductor device of the present invention. FIG. 11 illustrates an electronic device using a semiconductor device of the present invention. FIG. 11 illustrates an electronic device using a semiconductor device of the present invention.

Claims (15)

Forming a first layer on the substrate, forming a plurality of light absorption layers on the first layer;
Forming a light-transmitting layer on the first layer and the plurality of light absorption layers;
Irradiating the plurality of light absorption layers with a linear laser beam;
A method for manufacturing a semiconductor device, wherein the plurality of light absorption layers and the light-transmitting layer formed at a position overlapping with the plurality of light absorption layers are removed to expose the first layer. Forming a first layer on the substrate, forming a plurality of light absorption layers on the first layer;
Forming a light-transmitting conductive layer on the first layer;
Forming a light-transmitting layer on the plurality of light-absorbing layers and the light-transmitting conductive layer;
Irradiating the plurality of light absorption layers and the light-transmitting conductive layer with a linear laser beam,
A method for manufacturing a semiconductor device, wherein the plurality of light absorption layers and a light-transmitting layer formed at a position overlapping with the plurality of light absorption layers are removed, and the first layer is exposed. Forming a first layer on the substrate, forming a plurality of light absorption layers on the first layer;
Forming a light-transmitting conductive layer extending in the first direction on the first layer;
Forming a light-transmitting layer on the plurality of light-absorbing layers and the light-transmitting conductive layer;
Irradiating a linear laser beam to a region intersecting the first direction and where the plurality of light absorption layers are formed,
A method for manufacturing a semiconductor device, wherein the plurality of light absorption layers and the light-transmitting layer formed at a position overlapping with the plurality of light absorption layers are removed to expose the first layer.   4. The method for manufacturing a semiconductor device according to claim 1, wherein after the first layer is exposed, a second layer in contact with the first layer is formed. Forming a first layer on the substrate, forming a plurality of light absorption layers on the first layer;
Forming a light-transmitting layer on the first layer and the plurality of light absorption layers;
Irradiating the plurality of light absorption layers with a linear laser beam;
A semiconductor device comprising: a portion of each of the plurality of light absorption layers and the light-transmitting layer formed at a position overlapping with the plurality of light absorption layers are removed, and the light absorption layer is exposed. Manufacturing method. Forming a first layer on the substrate, forming a plurality of light absorption layers on the first layer;
Forming a light-transmitting conductive layer on the first layer;
Forming a light-transmitting layer on the plurality of light-absorbing layers and the light-transmitting conductive layer;
Irradiating the plurality of light absorption layers and the light-transmitting conductive layer with a linear laser beam,
A semiconductor device comprising: a portion of each of the plurality of light absorption layers and the light-transmitting layer formed at a position overlapping with the plurality of light absorption layers are removed, and the light absorption layer is exposed. Manufacturing method. Forming a first layer on the substrate, forming a plurality of light absorption layers on the first layer;
Forming a light-transmitting conductive layer extending in the first direction on the first layer;
Forming a light-transmitting layer on the plurality of light-absorbing layers and the light-transmitting conductive layer;
Irradiating a linear laser beam to a region intersecting the first direction and where the plurality of light absorption layers are formed,
A semiconductor device comprising: a portion of each of the plurality of light absorption layers and the light-transmitting layer formed at a position overlapping with the plurality of light absorption layers are removed, and the light absorption layer is exposed. Manufacturing method. Forming a first layer on the substrate, forming a plurality of light absorption layers on the first layer;
Forming a light-transmitting layer on the first layer and the plurality of light absorption layers;
Irradiating the plurality of light absorption layers with a linear laser beam;
A method for manufacturing a semiconductor device, wherein the light-transmitting layer is exposed by removing the light-transmitting layer formed at a position overlapping with the plurality of light-absorbing layers. Forming a first layer on the substrate, forming a plurality of light absorption layers on the first layer;
Forming a light-transmitting conductive layer on the first layer;
Forming a light-transmitting layer on the plurality of light-absorbing layers and the light-transmitting conductive layer;
Irradiating the plurality of light absorption layers and the light-transmitting conductive layer with a linear laser beam,
A method for manufacturing a semiconductor device, wherein the light-transmitting layer is exposed by removing the light-transmitting layer formed at a position overlapping with the plurality of light-absorbing layers. Forming a first layer on the substrate, forming a plurality of light absorption layers on the first layer;
Forming a light-transmitting conductive layer extending in the first direction on the first layer;
Forming a light-transmitting layer on the plurality of light-absorbing layers and the light-transmitting conductive layer;
Irradiating a linear laser beam to a region intersecting the first direction and where the plurality of light absorption layers are formed,
A method for manufacturing a semiconductor device, wherein the light-transmitting layer is exposed by removing the light-transmitting layer formed at a position overlapping with the plurality of light-absorbing layers.   11. The method for manufacturing a semiconductor device according to claim 5, wherein after the light absorption layer is exposed, a second layer in contact with the light absorption layer is formed.   11. The method for manufacturing a semiconductor device according to claim 5, wherein after the light absorption layer is removed, a second layer in contact with the first layer is formed.   13. The method for manufacturing a semiconductor device according to claim 4, wherein the second layer is a semiconductor layer or a conductive layer.   14. The method for manufacturing a semiconductor device according to claim 1, wherein the first layer is a semiconductor layer or a conductive layer.   15. The method for manufacturing a semiconductor device according to claim 1, wherein the light-transmitting layer is an insulating layer.

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