JP2008076768A - Radiation-curable resist resin composition for glass etching and method for producing glass substrate using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a radiation-curable resist resin composition for glass etching having excellent alkali solubility and hydrofluoric acid resistance and capable of suppressing the amount of side etching in etching of a glass substrate because it also has excellent adhesion to the glass substrate. <P>SOLUTION: The radiation-curable resist resin composition for glass etching comprises (A) an unsaturated group-containing alkali-soluble resin, (B) a compound having at least one ethylenically unsaturated double bond, (C) a radiation-sensitive radical polymerization initiator and (D) a silane coupling agent. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a radiation resist resin composition that can be used for forming a resist film in etching processing of a glass substrate, and a method for producing a glass substrate using the same.

  Photofabrication is an electroforming technology that consists mainly of chemical etching, electrolytic etching, or electroplating using a radiation-sensitive resin composition applied to the surface of a workpiece and patterning the coating film by photolithography. It is a general term for technologies for manufacturing various precision parts independently or in combination, and has become the mainstream of current precision micromachining technology.

  In recent years, along with downsizing of electronic devices, LSIs have been increasingly integrated and multi-layered, and a multi-pin mounting method on a substrate for mounting LSIs on electronic devices is required. Bare chip mounting using a chip method has been attracting attention. In such high-density mounting, the processing has been miniaturized.

  For example, in the back cap of an organic electroluminescent display (organic ELD), in order to reduce the thickness of the panel, it is considered to use glass for the back cap, and this back glass cap etches a glass substrate. It is formed by. In etching, a photoresist film is formed on a glass substrate, and only a desired region is etched.

  Various resist resin compositions have been conventionally used as resist film materials. However, if the adhesion to the glass substrate is poor, peeling occurs between the glass substrate and the resist film, and the amount of side etching increases. Therefore, there is a problem that the accuracy of the etching process is hindered.

  In order to solve this problem, a photocurable resin composition containing polysilane and a photosensitizer has been proposed (see Patent Document 1). The composition is a composition having good adhesion to a glass substrate in order to realize highly accurate etching processing, but the side etching amount is not specifically shown.

Moreover, in patent document 2, the present applicant made (A) the unsaturated group containing alkali-soluble resin, (B) the compound which has an ethylenically unsaturated double bond, and (C) the radiation sensitive polymerization containing a radiation radical polymerization initiator. A resin composition and a method for producing a metal pattern using the composition have been proposed. However, although a radiation-sensitive resin composition having the characteristics required for forming a metal pattern is described here, there is no mention of etching a glass substrate using the composition. Absent.
JP 2005-164877 A JP 2003-241372 A

The present invention provides a radiation-curable resist resin composition for glass etching that is suitable for etching a glass substrate. In addition, the present invention provides a glass substrate that suppresses side etching when the obtained radiation-curable resist resin composition for glass etching is coated on a glass substrate to form a resist film and etched using hydrofluoric acid. It is an object to provide a manufacturing method.

That is, the present invention relates to the following matters.
The radiation curable resin composition for glass etching of the present invention comprises (A) 1 to 40% by weight of a structural unit derived from a radical polymerizable compound (a) having a carboxyl group and a radical polymerizable compound having a phenolic hydroxyl group ( 1) to 50% by weight of a structural unit having a phenolic hydroxyl group derived from a radically polymerizable compound (b-2) having a functional group that can be converted into a phenolic hydroxyl group after polymerization of b-1) or a copolymer, 100 parts by weight of a copolymer whose constituent is a constituent unit derived from the compound (a), (b-1), (b-2) and another radical polymerizable compound (c) other than the following compound (d) On the other hand, (d) an unsaturated group-containing alkali-soluble resin obtained by reacting 0.1 to 20 parts by weight of a radically polymerizable compound having an epoxy group;
(B) a compound having at least one ethylenically unsaturated double bond;
(C) a radiation-sensitive radical polymerization initiator, a radiation curable resin composition for etching glass into a desired pattern,
The radiation curable resin composition contains (D) a silane coupling agent having a trialkoxysilyl group.

  Moreover, the radiation curable resin composition for glass etching of this invention is 1-5 weight part of said silane coupling agents (D) with respect to 100 weight part of said unsaturated group containing alkali-soluble resin (A). It is preferable to contain in the quantity.

  The method for producing a glass substrate of the present invention is a method in which the radiation curable resist resin composition for glass etching is applied onto a glass substrate to form a resist film, and the glass substrate is etched using hydrofluoric acid. And the side etching value calculated | required from following formula (Eq-1) is less than 5, It is characterized by the above-mentioned.

Side etching value = | (w ₂ −w ₁ ) / d | (Eq-1)
In the formula, w ₁ is a pattern dimension, w ₂ is a lateral etching width, d is an etching width in a direction perpendicular to the etching direction of w ₂ , and all units are μm.

  According to the present invention, since it has excellent alkali resolution and hydrofluoric acid resistance, and also has excellent adhesion to a glass substrate, the amount of side etching can be suppressed during etching of the glass substrate. The radiation-curable resist resin composition for use can be provided.

  Moreover, according to the manufacturing method of this invention, the glass substrate in which the etching process with high precision was given using the said radiation-curable resist resin composition for glass etching can be manufactured.

Hereinafter, the radiation-curable resist resin composition for glass etching of the present invention (hereinafter also referred to as “resist resin composition of the present invention”), a glass substrate using the composition, and a method for producing the same will be specifically described.

<Radiation curable resist resin composition for glass etching of the present invention>
The radiation-curable resist resin composition for glass etching of the present invention comprises (A) an unsaturated group-containing alkali-soluble resin, (B) a compound having at least one ethylenically unsaturated double bond, and (C) a radiation sensitive property. Contains a radical polymerization initiator and (D) a silane coupling agent.

First, each component which forms the resist resin composition of this invention is demonstrated.
[(A) Unsaturated group-containing alkali-soluble resin]
The (A) unsaturated group-containing alkali-soluble resin (hereinafter also referred to as “alkali-soluble resin (A)”) used in the present invention has a radically polymerizable compound (a) having a carboxyl group and a phenolic hydroxyl group. Radical polymerizable compound (b-2) having a functional group that can be converted to a phenolic hydroxyl group after polymerization of the radical polymerizable compound (b-1) and / or copolymer, and other radical polymerization other than the following compound (d) It can be obtained by reacting (d) a radically polymerizable compound having an epoxy group with a copolymer obtained from the functional compound (c) (hereinafter also referred to as “copolymer (I)”).

Radical polymerizable compound having a carboxyl group (a)
Examples of the radical polymerizable compound (a) having a carboxyl group (hereinafter, also referred to as “carboxyl compound (a)”) include acrylic acid, methacrylic acid, crotonic acid, 2-succinoloylethyl (meth) acrylate, 2-malenoylethyl (meth) acrylate, 2-hexahydrophthaloylethyl (meth) acrylate, ω-carboxy-polycaprolactone monoacrylate (commercially available products include, for example, Aronix M-5300
(Trade name, manufactured by Toagosei Co., Ltd.)), monohydroxyethyl acrylate phthalate (as commercial products, for example, Aronix M-5400 (trade name, manufactured by Toagosei Co., Ltd.)), acrylic acid dimer (as commercial products) Are, for example, Aronix M-5600 (trade name, manufactured by Toagosei Co., Ltd.), 2-hydroxy-3-phenoxypropyl acrylate (commercially available products such as Aronix M-5700 (trade name, manufactured by Toagosei Co., Ltd.) Monocarboxylic acids such as)); (meth) acrylic acid derivatives having a carboxyl group such as dicarboxylic acids such as maleic acid, fumaric acid, citraconic acid, mesaconic acid and itaconic acid can be used. These compounds can be used alone or in combination of two or more.

  Among these, acrylic acid, methacrylic acid, phthalic acid monohydroxyethyl acrylate, and 2-hexahydrophthaloylethyl methacrylate are preferable. Copolymer (I) ((A) The above-mentioned compound (a) constituting the alkali-soluble resin, (b-1) and / or (b-2), and other radical polymerizable other than the following compound (d) The structural unit derived from the carboxyl group compound (a) in 100% by weight of the copolymer (copolymer obtained from the compound (c)) (hereinafter also referred to as “structural unit (a)”) is usually 1 to 40% by weight. %, Preferably 5 to 30% by weight, particularly preferably 10 to 20% by weight.

  The alkali solubility of the alkali-soluble resin (A) can be adjusted by the content of the structural unit (a). If the content of the structural unit (a) is too small, the alkali-soluble resin (A) is dissolved in the alkali developer. Therefore, a film residue may be generated after development, and sufficient resolution may not be obtained. On the other hand, if the content of the structural unit (a) is too large, the solubility of the alkali-soluble resin (A) in the alkali developer becomes too high, and sufficient resolution cannot be obtained by dissolution of the exposed portion or swelling by the developer. Sometimes.

Radical polymerizable compound (b-1) having a phenolic hydroxyl group, radical polymerizable compound (b-2) having a functional group that can be converted to a phenolic hydroxyl group after polymerization of the copolymer
Examples of the radical polymerizable compound (b-1) having a phenolic hydroxyl group (hereinafter also referred to as “phenolic hydroxyl compound (b-1)”) include p-hydroxystyrene, m-hydroxystyrene, and o-hydroxystyrene. , Α-methyl-p-hydroxystyrene, α-methyl-m-hydroxystyrene, α-methyl-o-hydroxystyrene, 2-allylphenol, 4-allylphenol, 2-allyl-6-methylphenol, 2-allyl -6
-Methoxyphenol, 4-allyl-2-methoxyphenol, 4-allyl-2,6-dimethoxyphenol, 4-allyloxy-2-hydroxybenzophenone and the like. Of these, α-methyl-p-hydroxystyrene is preferred.

  The radical polymerizable compound (b-2) having a functional group that can be converted to a phenolic hydroxyl group after polymerization of the copolymer (hereinafter also referred to as “functional group-containing compound (b-2)”) is p-acetoxystyrene. , Α-methyl-p-acetoxystyrene, p-benzyloxystyrene, p-tert-butoxystyrene, p-tert-butoxycarbonyloxystyrene, p-tert-butyldimethylsiloxystyrene, and the like.

  When these functional group-containing compounds (b-2) are used, the obtained copolymer can be easily converted to the functional group by phenol treatment by appropriate treatment, for example, hydrolysis using hydrochloric acid or the like. Can be converted to a functional hydroxyl group.

  Copolymer (I) ((A) The above-mentioned compound (a) constituting the alkali-soluble resin, (b-1) and / or (b-2), and other radical polymerizable other than the following compound (d) A copolymer obtained from the compound (c)) a structural unit having a phenolic hydroxyl group derived from the phenolic hydroxyl compound (b-1) or the functional group-containing compound (b-2) in 100% by weight (hereinafter, The “structural unit (b)” is usually 1 to 50% by weight, preferably 10 to 40% by weight, particularly preferably 20 to 40% by weight. When the content of the structural unit (b) is too small, the resolution of the radiation curable resin composition for glass etching and the peelability after etching are deteriorated. Conversely, when the content of the structural unit (b) is too large, The molecular weight of the resulting copolymer is not sufficiently increased, and it becomes difficult to form a coating film having a film thickness of 20 μm or more, and resolution and hydrofluoric acid resistance may be lowered.

Other radical polymerizable compounds (c)
The other radically polymerizable compound (c) includes the above-mentioned carboxyl group compound (a), phenolic hydroxyl group compound (b-1), functional group-containing compound (b-2), and radically polymerizable compound having the following epoxy group (d ) Other radical polymerizable compounds (c), such as (meth) acrylic acid aryl esters, dicarboxylic acid diesters, nitrile group-containing polymerizable compounds, amide bond-containing polymerizations. Compounds, vinyls, allyls, chlorine-containing polymerizable compounds, conjugated diolefins and the like. Specifically, dicarboxylic acid diesters such as diethyl maleate, diethyl fumarate and diethyl itaconate; (meth) acrylic acid aryl esters such as phenyl (meth) acrylate and benzyl (meth) acrylate; and n-butyl acrylate ( Alkyl ester of (meth) acrylic acid; styrene, α-methylstyrene, m-methylstyrene, p-methylstyrene, vinyltoluene, p-methoxystyrene, p-hydroxystyrene, m-hydroxystyrene, o-hydroxystyrene, α- Aromatic vinyls such as methyl-p-hydroxystyrene, α-methyl-m-hydroxystyrene, α-methyl-o-hydroxystyrene; 2-allylphenol, 4-allylphenol, 2-allyl-6-methylphenol, 2-allyl-6-meth Aromatic allyls such as siphenol, 4-allyl-2-methoxyphenol, 4-allyl-2,6-dimethoxyphenol, 4-allyloxy-2-hydroxybenzophenone; nitrile group-containing polymerizability such as acrylonitrile and methacrylonitrile Compound; Amide bond-containing polymerizable compounds such as acrylamide and methacrylamide; Fatty acid vinyls such as vinyl acetate; Chlorine-containing polymerizable compounds such as vinyl chloride and vinylidene chloride;
In addition to conjugated diolefins such as 3-butadiene, isoprene and 1,4-dimethylbutadiene, polycyclic carbonization such as isobornyl acrylate and tricyclo [5.2.1.0 ^2.6 ] decan-8 (or 9) -yl-acrylate (Meth) acrylic acid esters of hydrogen compounds can be used. These compounds can be used alone or in combination of two or more.

  Copolymer (I) ((A) The above-mentioned compound (a) constituting the alkali-soluble resin, (b-1) and / or (b-2), and other radical polymerizable other than the following compound (d) (Copolymer obtained from compound (c)) The constituent unit derived from other radical polymerizable compound (c) in 100% by weight is usually 10 to 80% by weight, preferably 40 to 70% by weight. . By copolymerizing the radically polymerizable compound (c), the mechanical properties of the copolymer (I) can be appropriately controlled, and the solubility in an aqueous alkali solution can also be adjusted.

Examples of the polymerization solvent used in producing the solvent copolymer (I) include alcohols such as methanol, ethanol, ethylene glycol, diethylene glycol, and propylene glycol; cyclic ethers such as tetrahydrofuran and dioxane; ethylene glycol monomethyl ether, Multivalents such as ethylene glycol monoethyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol ethyl methyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether Alcoa Alkyl ethers of ethylene glycol ethyl ether acetate, diethylene glycol ethyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol monomethyl ether acetate and other polyhydric alcohol alkyl ether acetates; toluene, xylene and other aromatic hydrocarbons; acetone , Ketones such as methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone, diacetone alcohol; ethyl acetate, butyl acetate, ethyl 2-hydroxypropionate, 2-hydroxy-2-methylpropion Ethyl acetate, ethyl 2-hydroxy-2-methylpropionate, ethyl ethoxyacetate, ethyl hydroxyacetate, 2-hydroxy-3- Methyl Chirubutan acid, methyl 3-methoxypropionate, 3-methoxypropionate, ethyl 3-ethoxy ethyl propionate, methyl 3-ethoxypropionate, ethyl acetate, esters such as butyl acetate. Of these, cyclic ethers, alkyl ethers of polyhydric alcohols, alkyl ether acetates of polyhydric alcohols, ketones, and esters are preferable.

As a polymerization catalyst used when producing the catalyst copolymer (I), a normal radical polymerization initiator can be used. For example, 2,2′-azobisisobutyronitrile, 2,2′-azobis- ( 2,
Azo compounds such as 4-dimethylvaleronitrile), 2,2′-azobis- (4-methoxy-2-dimethylvaleronitrile); benzoyl peroxide, lauroyl peroxide, tert-butylperoxypivalate, 1,1′-bis- Mention may be made of organic peroxides such as (tert-butylperoxy) cyclohexane and hydrogen peroxide. When a peroxide is used as a radical polymerization initiator, a redox initiator may be combined with a reducing agent.

  The weight average molecular weight (Mw) of the copolymer (I) obtained by the above method is usually 1,000 to 100,000, preferably 5,000 to 50,000, in terms of polystyrene by gel permeation chromatography. More preferably, it is 10,000 to 30,000.

Radical polymerizable compound having epoxy group (d)
Examples of the radical polymerizable compound (d) having an epoxy group (hereinafter also referred to as “epoxy group compound (d)”) include glycidyl (meth) acrylate, glycidyl α-ethyl (meth) acrylate, and glycidyl α-n-. Examples include propyl (meth) acrylate, glycidyl α-n-butyl (meth) acrylate, 3,4-epoxybutyl (meth) acrylate, 6,7-epoxyheptyl (meth) acrylate, and cyclohexene oxide (meth) acrylate. it can. Among these, glycidyl (meth) acrylate and glycidyl α-ethyl (meth) acrylate are preferable.

Preparation of Alkali-Soluble Resin (A) The alkali-soluble resin (A) used in the present invention comprises the carboxylic acid of the copolymer (I) and the epoxy group compound (d), for example, tetrabutylammonium bromide. It can be obtained by reacting with an ammonia-based catalyst such as The copolymer (I) and the epoxy group compound (d) are usually 0.1 to 20 weights of the reaction amount of the epoxy group compound (d) with respect to 100 parts by weight of the obtained alkali-soluble resin (A). Parts, preferably 1 to 15 parts by weight.

  When the reaction amount of the epoxy group compound (d) is 20 parts by weight or more, fine resolution is poor and it may be difficult to peel off the cured product after etching. On the other hand, if it is 0.1 parts by weight or less, the curability of the fine pattern becomes insufficient, and a good pattern shape may not be obtained. The reaction solvent used for the reaction of the carboxylic acid of the copolymer (I) and the epoxy group compound (d) may be the same as that used for the polymerization of the copolymer (I). Therefore, after completion of the polymerization reaction of the copolymer (I), after cooling to a predetermined temperature, the radical polymerizable compound (d) having an epoxy group and a catalyst are added to the reaction system, so that the carboxyl of the copolymer (I) is added. The reaction between the acid and the epoxy group can be carried out following the polymerization reaction.

[(B) Compound having at least one ethylenically unsaturated double bond]
The compound having at least one ethylenically unsaturated double bond used in the present invention (hereinafter also referred to as “ethylenically unsaturated compound (B)”) has at least one ethylenically unsaturated group in the molecule. In general, a (meth) acrylate compound having a (meth) acryloyl group as an ethylenically unsaturated group or a compound having a vinyl group is preferably used.

The (meth) acrylate compound is classified into a monofunctional compound and a polyfunctional compound, and any compound can be used. Among such ethylenically unsaturated compounds (B), monofunctional compounds include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, methyl (meta ) Acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, isopropyl (meth) acrylate, butyl (meth) acrylate, amyl (meth) acrylate, isobutyl (meth) acrylate, tert-butyl (meth) acrylate, pentyl (meth) ) Acrylate, isoamyl (meth) acrylate, hexyl (meth) acrylate, heptyl (meth) acrylate, octyl (meth) acrylate, isooctyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, noni (Meth) acrylate, decyl (meth) acrylate, isodecyl (meth) acrylate, undecyl (meth) acrylate, dodecylamyl (meth) acrylate, lauryl (meth) acrylate, octadecyl (meth) acrylate, stearyl (meth) acrylate, tetrahydro Furfuryl (meth) acrylate, butoxyethyl (meth) acrylate, ethoxydiethylene glycol (meth) acrylate, benzyl (meth) acrylate, cyclohexyl (meth) acrylate, phenoxyethyl (meth) acrylate, polyethylene glycol mono (meth) acrylate, polypropylene glycol Mono (meth) acrylate, methoxyethylene glycol (meth) acrylate, ethoxyethyl (meth) acrylate, Xypolyethylene glycol (meth) acrylate, phenoxypolyethylene glycol (meth) acrylate, phenoxypolypropylene glycol (meth) acrylate, ethoxyethyl (meth) acrylate, methoxypolypropylene glycol (meth) acrylate, dicyclopentadienyl (meth) acrylate, di Cyclopentanyl (meth) acrylate, dicyclopentenyl (meth) acrylate, tricyclodecanyl (meth) acrylate, isobornyl (meth) acrylate, bornyl (meth) acrylate, diacetone (meth) acrylamide, isobutoxymethyl (meth) acrylamide , N-vinylpyrrolidone, N-vinylcaprolactam, N, N-dimethyl (meth) acrylamide, tert-octyl (meth) acryl Luamide, dimethylaminoethyl (meth) acrylate, diethylaminoethyl (meth) acrylate, 7-amino-3,7-dimethyloctyl (meth) acrylate, dimethyl maleate, diethyl maleate, dimethyl fumarate, diethyl fumarate, 2- Hydroxyethyl methacrylate, ethylene glycol monomethyl ether (meth) acrylate, ethylene glycol monoethyl ether (meth) acrylate, glycerol (meth) acrylate, acrylic amide, methacrylic acid amide, (meth) acrylonitrile, methyl (meth) acrylate, ethyl ( Examples include meth) acrylate, isobutyl (meth) acrylate, and 2-ethylhexyl (meth) acrylate.

Examples of the polyfunctional compound include trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, ethylene glycol di (meth) acrylate, tetraethylene glycol di (meth) acrylate, and polyethylene glycol di (meth). Acrylate, 1,4-butanediol di (meth) acrylate, butylene glycol di (meth) acrylate, propylene glycol di (meth) acrylate, trimethylolpropane di (meth) acrylate, 1,6-hexanediol di (meth)
Acrylate, neopentyl glycol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, tris (2-hydroxyethyl) isocyanurate tri (meth) acrylate, tris (2-hydroxyethyl) isocyanurate di (meth) acrylate, Tricyclodecane dimethanol di (meth) acrylate, epoxy (meth) acrylate obtained by adding (meth) acrylic acid to diglycidyl ether of bisphenol A, bisphenol A di (meth) acryloyloxyethyl ether, bisphenol A di (meth) Acryloyloxyethyloxyethyl ether, bisphenol A di (meth) acryloyloxyloxymethyl ethyl ether, tetramethylolpropane tetra (meth) acrylate, pentae Suritorutori (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate.

As these ethylenically unsaturated compounds (B), commercially available ones can be used as they are. Specific examples of commercially available ethylenically unsaturated compounds (B) include Aronix M-210, M-309, M-310, M-400, M-7100, M-8030, M -8060, M-8100, M-9050, M-240, M-245, M-6100, M-6200, M-6250, M-6300, M-6400, M -6500 (above, manufactured by Toagosei Co., Ltd.), KAYARAD R-551, R-7
12, TMPTA, HDDA, TPGDA, PEG400DA, MANDA, HX-220, HX-620, R-604, DPCA-20, DPCA-30, DPCA-60, DPCA-120 (Nippon Kayaku Co., Ltd.), Biscote # 295, 300, 260, 312, 335HP, 360, GPT, 3PA, 400 (above, Osaka Organic Chemical Co., Ltd.) ) And other commercial names.

  These ethylenically unsaturated compounds (B) may be used alone or in combination of two or more, and are preferably 10 to 250 parts by weight, more preferably 10 to 100 parts by weight with respect to 100 parts by weight of the alkali-soluble resin (A). 150 parts by weight, particularly preferably 10 to 100 parts by weight. When the amount is less than 10 parts by weight, the sensitivity at the time of exposure tends to decrease. When the amount exceeds 250 parts by weight, the compatibility with the alkali-soluble resin (A) deteriorates, the storage stability decreases, and a thick film of 20 μm or more. It may be difficult to form.

[(C) Radiation sensitive radical polymerization initiator]
Examples of the radiation sensitive radical polymerization initiator (C) used in the present invention include α-diketones such as benzyl and diacetyl; acyloins such as benzoin; acyloins such as benzoin methyl ether, benzoin ethyl ether and benzoin isopropyl ether. Ethers; thioxanthone, 2,4-diethylthioxanthone, thioxanthone-4-
Benzophenones such as sulfonic acid, benzophenone, 4,4′-bis (dimethylamino) benzophenone, 4,4′-bis (diethylamino) benzophenone; acetophenone, p-dimethylaminoacetophenone, α, α-dimethoxy-α-acetoxybenzophenone , Α, α-dimethoxy-α-phenylacetophenone, p-methoxyacetophenone, 1
-[2-methyl-4-methylthiophenyl] -2-morpholino-1-propanone, α,
acetophenones such as α-dimethoxy-α-morpholino-methylthiophenylacetophenone and 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butan-1-one; anthraquinone, 1,4-naphthoquinone and the like Quinones; halogen compounds such as phenacyl chloride, tribromomethylphenyl sulfone, tris (trichloromethyl) -s-triazine; [1,2′-bisimidazole] -3,3 ′, 4,4′-tetraphenyl, [1,2′-bisimidazole] -1,2′-dichlorophenyl-3,3 ′, 4,4′-
Bisimidazoles such as tetraphenyl, peroxides such as di-tert-butyl peroxide; acylphosphine oxides such as 2,4,6-trimethylbenzoyldiphenylphosphine oxide, and the like.

  Commercially available products include Irgacure 184, 651, 500, 907, 369, CG24-61 (above, manufactured by Ciba Specialty Chemicals Co., Ltd.), Lucirin LR8728, Lucirin TPO (above, manufactured by BASF Corp.), Darocur 1116 1173 (manufactured by Ciba Specialty Chemicals Co., Ltd.) and Ubekrill P36 (manufactured by UCB Co., Ltd.).

Further, if necessary, a compound having a hydrogen donating property such as mercaptobenzothioazole or mercaptobenzoxazole may be used in combination with the photo radical polymerization initiator.
Among the above-mentioned radiation-sensitive radical polymerization initiators (C), preferred compounds are 1- [2-methyl-4-methylthiophenyl] -2-morpholino-1-propanone, 2-benzyl-2-dimethylamino- Acetophenones such as 1- (4-morpholinophenyl) -butan-1-one, α, α-dimethoxy-α-phenylacetophenone, phenacyl chloride, tribromomethylphenylsulfone, 2,4,6-trimethylbenzoyldiphenyl Use of phosphine oxide, 1,2′-bisimidazoles, 4,4′-diethylaminobenzophenone and mercaptobenzothiazole, Lucillin TPO (trade name), Irgacure 369 (trade name), Irgacure 651 (trade name), etc. Can be mentioned.

  These radiation-sensitive radical polymerization initiators (C) can be used alone or in combination of two or more. The amount used is preferably 0.1 to 50 parts by weight, more preferably 1 to 30 parts by weight, and particularly preferably 2 to 30 parts by weight with respect to 100 parts by weight of the alkali-soluble resin (A). If the amount used is 1 part by weight or less, it is easily affected by radical deactivation (sensitivity reduction) due to oxygen, and if it exceeds 50 parts by weight, the compatibility is deteriorated and the storage stability is lowered. Tend.

These radiation-sensitive radical polymerization initiators (C) can be used in combination with a radiation sensitizer.
[(D) Silane coupling agent]
The resist resin composition of the present invention contains a silane coupling agent (D) having a trialkoxysilyl group in order to improve adhesion to a glass substrate. Here, the silane coupling agent (D) having a trialkoxysilyl group means a silane coupling agent having a reactive substituent such as a carboxyl group, a methacryloyl group, an isocyanate group, and an epoxy group. Trimethoxysilylbenzoic acid, γ-methacryloxypropyltrimethoxysilane, vinyltriacetoxysilane, vinyltrimethoxysilane, γ-isocyanatopropyltriethoxysilane, 3-glycidoxypropyltrimethoxysilane, β- (3,4 -Epoxycyclohexyl) ethyltrimethoxysilane and the like. Of these, γ-methacryloxypropyltrimethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, and 3-glycidoxypropyltrimethoxysilane are preferable.

  These silane coupling agents (D) can be used alone or in combination of two or more. The amount used is preferably 0.1 to 20 parts by weight, more preferably 1 to 10 parts by weight, and particularly preferably 1 to 5 parts by weight with respect to 100 parts by weight of the alkali-soluble resin (A). When the silane coupling agent (D) is within the above range, the adhesion with the glass substrate is good, and the amount of side etching can be suppressed even during etching.

[Other ingredients]
In the present invention, in addition to the above-mentioned alkali-soluble resin (A), ethylenically unsaturated compound (B), radiation-sensitive radical polymerization initiator (C) and silane coupling agent (D), a solvent can be used as necessary. Ingredients such as various additives can be used.

As the organic solvent, those which can dissolve the alkali-soluble resin (A) and each component uniformly and do not react with each component are used. As such an organic solvent, a solvent similar to the polymerization solvent used in producing the alkali-soluble resin (A) can be used, and further, N-methylformamide, N, N-dimethylformamide, N-methyl Formanilide, N-methylacetamide, N, N-dimethylacetamide, N-methylpyrrolidone, dimethyl sulfoxide, benzylethyl ether, dihexyl ether, acetonylacetone, isophorone, caproic acid, caprylic acid, 1-octanol, 1-nonanol, High-boiling solvents such as benzyl alcohol, benzyl acetate, ethyl benzoate, diethyl oxalate, diethyl maleate, γ-butyrolactone, ethylene carbonate, propylene carbonate, and phenyl cellosolve acetate can also be added.

  Among these organic solvents, polyhydric alcohol alkyl ethers such as ethylene glycol monoethyl ether and diethylene glycol monomethyl ether; ethyl cellosolve acetate, propylene Preferred are alkyl ether acetates of polyhydric alcohols such as glycol monomethyl ether acetate; esters such as ethyl 3-ethoxypropionate, methyl 3-methoxypropionate and ethyl 2-hydroxypropionate; ketones such as diacetone alcohol. is there.

The amount of the solvent used can be appropriately determined according to the application, coating method, and the like.
Thermal Polymerization Inhibitor A thermal polymerization inhibitor can be added to the resist resin composition of the present invention. Examples of such thermal polymerization inhibitors include pyrogallol, benzoquinone, hydroquinone, methylene blue, tert-butylcatechol, monobenzyl ether, methylhydroquinone, amylquinone, amyloxyhydroquinone, n-butylphenol, phenol, hydroquinone monopropyl ether, and 4,4. '-(1-Methylethylidene) bis (2-methylphenol), 4,4'-(1-methylethylidene) bis (2,6-dimethylphenol), 4,4 '-[1- [4
-(1- (4-hydroxyphenyl) -1-methylethyl) phenyl] ethylidene] bisphenol, 4,4 ', 4 "-ethylidenetris (2-methylphenol), 4,4', 4" -ethylidenetrisphenol Examples include 1,1,3-tris (2,5-dimethyl-4-hydroxyphenyl) -3-phenylpropane.

The amount of these thermal polymerization inhibitors used is preferably 5 parts by weight or less with respect to 100 parts by weight of the alkali-soluble resin (A).
Surfactant A surfactant may be added to the resist resin composition of the present invention for the purpose of improving coating properties, antifoaming properties, leveling properties and the like.

  As the surfactant, for example, BM-1000, BM-1100 (above, manufactured by BM Chemie), MegaFuck F142D, F172, F173, F183 (above, manufactured by Dainippon Ink & Chemicals, Inc.), Florard FC-135, FC-170C, FC-430, FC-431 (above, manufactured by Sumitomo 3M), Surflon S-112, S-113, S-131, S-141, Commercially available under trade names such as S-145 (above, manufactured by Asahi Glass Co., Ltd.), SH-28PA, i-190, i-193, SZ-6032, SF-8428 (above, made by Toray Dow Corning Silicone Co., Ltd.) Fluorosurfactant that has been used can be used.

The amount of these surfactants to be added is preferably 5 parts by weight or less with respect to 100 parts by weight of the alkali-soluble copolymer (A).
Acid anhydrides In addition, the radiation-sensitive resin composition of the present invention contains acetic acid, propionic acid, n-butyric acid, iso-butyric acid, n-valeric acid, isoform, in order to finely adjust the solubility in an alkali developer. -Monocarboxylic acids such as valeric acid, benzoic acid, cinnamic acid;
Lactic acid, 2-hydroxybutyric acid, 3-hydroxybutyric acid, salicylic acid, m-hydroxybenzoic acid, p-hydroxybenzoic acid, 2-hydroxycinnamic acid, 3-hydroxycinnamic acid, 4-hydroxycinnamic acid, 5-hydroxy Hydroxymonocarboxylic acids such as isophthalic acid, syringic acid;
Oxalic acid, succinic acid, glutaric acid, adipic acid, maleic acid, itaconic acid, hexahydrophthalic acid, phthalic acid, isophthalic acid, terephthalic acid, 1,2-cyclohexanedicarboxylic acid, 1,2,4-cyclohexanetricarboxylic acid, Polyvalent carboxylic acids such as trimellitic acid, pyromellitic acid, cyclopentanetetracarboxylic acid, butanetetracarboxylic acid, 1,2,5,8-naphthalenetetracarboxylic acid;
Itaconic anhydride, succinic anhydride, citraconic anhydride, dodecenyl succinic anhydride, tricarbanilic anhydride, maleic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, hymic anhydride, 1,2,3,4-butanetetra Acid anhydrides such as carboxylic dianhydride, cyclopentanetetracarboxylic dianhydride, phthalic anhydride, pyromellitic anhydride, trimellitic anhydride, benzophenone tetracarboxylic anhydride, ethylene glycol bistrimellitic anhydride, glycerin tris anhydrous trimellitate Can also be added.

Filler, colorant, viscosity modifier Furthermore, a filler, a colorant, a viscosity modifier, etc. can also be added to the resist resin composition of this invention as needed.

Examples of the filler include silica, alumina, talc, bentonite, zirconium silicate, and powdered glass.
Colorants include alumina white, clay, barium carbonate, barium sulfate and other extender pigments; zinc white, lead white, yellow lead, red lead, ultramarine, bitumen, titanium oxide, zinc chromate, bengara, carbon black, etc. Pigments;
Organic pigments such as Brilliant Carmine 6B, Permanent Red 6B, Permanent Red R, Benzidine Yellow, Phthalocyanine Blue, Phthalocyanine Green;
Basic dyes such as magenta and rhodamine; direct dyes such as direct scarlet and direct orange;
Examples include acid dyes such as roserine and methanyl yellow.

Examples of the viscosity modifier include bentonite, silica gel, and aluminum powder.
The compounding amount of these additives may be in a range that does not impair the essential characteristics of the composition, and is preferably 50% by weight or less in 100% by weight of the resulting composition.

[Preparation of Resist Resin Composition of the Present Invention]
In preparing the resist resin composition of the present invention, when the filler and the pigment are not added, the components (A), (B), (C) and (D), and other components as necessary. It is only necessary to mix and stir the components with known methods, and when adding fillers and pigments, these components can be mixed and dispersed using a disperser such as a dissolver, homogenizer, or three roll mill. That's fine. Moreover, you may filter each component or the composition obtained using a mesh, a membrane filter, etc. as needed.

<The manufacturing method of the glass substrate of this invention>
Next, the manufacturing method of the glass substrate of the present invention using the radiation curable resin composition for glass etching will be described in more detail for each step.

[(1) Formation of resist film]
When the above-described resist resin composition of the present invention is used as a liquid resin composition, a desired resist film is formed by applying a solution of the resist resin composition of the present invention on a glass substrate and removing the solvent by heating. can do. As a coating method on the glass substrate, a spin coating method, a slit coating method, a roll coating method, a screen printing method, an applicator method, or the like can be applied. In addition, although the drying condition of the coating film of the resist resin composition of this invention changes with kinds of each component in a composition, a mixture ratio, the thickness of a coating film, etc., it is 60-160 degreeC normally, Preferably 80- It is about 3 to 15 minutes at 150 ° C. If the drying time is too short, the adhesion state at the time of development deteriorates, and if it is too long, the resolution may be lowered due to heat fogging.

[(2) Radiation irradiation]
The exposed portion can be cured by irradiating the obtained coating film with radiation such as ultraviolet rays or visible rays having a wavelength of 300 to 500 nm through a photomask having a desired pattern. Here, the radiation means ultraviolet rays, visible rays, far ultraviolet rays, X-rays, electron beams, and the like, and a low pressure mercury lamp, a high pressure mercury lamp, an ultrahigh pressure mercury lamp, a metal halide lamp, an argon gas laser, or the like can be used as a light source. The amount of radiation irradiation varies depending on the type of each component in the composition, the blending amount, the thickness of the coating film, etc., but is, for example, in the range of 100 to 1500 mJ / cm ² when using a high-pressure mercury lamp.

[(3) Development method]
As a developing method after irradiation with radiation, an alkaline aqueous solution is used as a developing solution to dissolve and remove unnecessary non-exposed portions, leaving only exposed portions to obtain a cured film having a desired pattern. Examples of the developer include sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, aqueous ammonia, ethylamine, n-propylamine, diethylamine, di-n-propylamine, triethylamine, methyldiethylamine, dimethyl. Ethanolamine, triethanolamine, tetramethylammonium hydroxide,
An aqueous solution of an alkali such as tetraethylammonium hydroxide, pyrrole, piperidine, 1,8-diazabicyclo [5.4.0] -7-undecene, 1,5-diazabicyclo [4.3.0] -5-nonane is used. can do.

  Further, an aqueous solution obtained by adding an appropriate amount of a water-soluble organic solvent such as methanol or ethanol or a surfactant to the alkaline aqueous solution can also be used as a developer. The development time varies depending on the type of each component in the composition, the mixing ratio, the thickness of the coating film, etc., but is usually 30 to 360 seconds, and the development method is a liquid filling method, a dipping method, a paddle method, a spraying method. Any of the method and the shower developing method may be used. After the development, washing with running water is performed for 30 to 90 seconds and air-dried using an air gun or the like, or dried under heating such as a hot plate or oven.

[(4) Post-processing]
The coating film obtained from the resist resin composition of the present invention can be sufficiently cured only by the above-described irradiation, but depending on the application, it can be further irradiated with additional radiation (hereinafter referred to as post-exposure) or heating. It can be further cured. The post-exposure can be performed by the same method as the above-mentioned radiation irradiation method, and the radiation irradiation amount is not particularly limited, but is preferably in the range of 100 to 2000 mJ / cm ² when using a high-pressure mercury lamp. Moreover, the method at the time of a heating uses heating apparatuses, such as a hotplate and an oven, predetermined | prescribed temperature, for example, 60-100 degreeC, for predetermined | prescribed time, for example, 5-30 minutes on a hotplate, and 5-5 in oven. What is necessary is just to heat-process for 60 minutes. By this post-treatment, a cured film having a desired pattern having even better characteristics can be obtained.

[(5) Etching]
As a method of applying the resist resin composition of the present invention to the glass substrate surface and etching it, a conventionally known method is employed. For example, after applying the resist resin composition to the substrate surface, the coating film is patterned by photolithography technology. In addition, wet etching that is immersed in an etching solution using this as a mask, dry etching that is physically or chemically etched under reduced pressure, or a combination of these may be used. Examples of the etchant used for wet etching include hydrofluoric acid alone, hydrofluoric acid and ammonium fluoride, mixed acid of hydrofluoric acid and other acids (for example, hydrochloric acid, sulfuric acid, phosphoric acid, and the like). For dry etching, CF gas, chlorine-based gas, or the like can be used.

Normally, during this etching process, as the etching progresses, the etching solution penetrates into the interface between the resist composition and the glass substrate, and lateral etching (side etching) occurs at the edge portion of the resist pattern. That is, as shown in FIG. 1, side etching (FIG. 2: w ₂ −w ₁ ) occurs with the progress of etching in the vertical direction (FIG. 1: d) with respect to the pattern dimension (FIG. 1: w ₁ ). . Therefore, when the adhesiveness between the resist composition and the glass substrate is poor, the etching solution easily penetrates into the interface between the resist composition and the glass substrate, and the side etching amount increases. Since the resist composition of the present invention has high adhesiveness with a glass substrate, the amount of side etching can be suppressed, so that a glass substrate with high etching processing accuracy can be obtained.

Specifically, the side etching amount can be evaluated by a side etching value represented by the following formula (Eq-1).
Side etching value = | (w ₂ −w ₁ ) / d | (Eq-1)
In the formula, w ₁ is a pattern dimension, w ₂ is a lateral etching width, d is an etching width in a direction perpendicular to the etching direction of w ₂ , and all units are μm. That is, the higher the side etching value is, the larger the side etching amount is. When the side etching value is 2, side etching does not occur at all, and the etching accuracy is ideal.

  According to the method for producing a glass substrate of the present invention, the side etching value is less than 5, preferably less than 3. When the side etching value is within the above range, it is possible to produce a glass substrate having high etching processing accuracy with a reduced side etching amount.

[(6) Peeling treatment]
In order to peel the cured film of the present invention from the glass substrate, the substrate may be immersed in a peeling solution being stirred at 30 to 80 ° C. for 5 to 30 minutes. Examples of the stripping solution used here include inorganic alkali components such as sodium hydroxide and potassium hydroxide, and organic alkali components such as tertiary amine and quaternary ammonium salt, water, dimethyl sulfoxide, N-methyl. Pyrrolidone alone or a solution dissolved in a mixed solution thereof is raised. Moreover, it is also possible to peel by these spraying solutions using a spray method, a shower method and a paddle method.

EXAMPLES The present invention will be specifically described below with reference to examples, but the present invention is not limited thereto. Unless otherwise specified, parts are parts by weight, and% is% by weight.
[Synthesis Example 1]
(Synthesis of alkali-soluble resin (A-1))
After the flask equipped with a reflux was purged with nitrogen, 3.0 g of 2,2′-azoisobutyronitrile (polymerization initiator), 150 g of ethyl lactate (solvent), 5 g of acrylic acid, 7 g of methacrylic acid, α-methyl- 35 g of p-hydroxystyrene, 24 g of isobornyl acrylate and 29 g of n-butyl acrylate were charged and stirred until the solid content was completely dissolved. After complete dissolution, the temperature of the solution is raised to 80 ° C., polymerization is performed at this temperature for 7 hours, and then the solution is heated to 100 ° C. and polymerization is performed for 1 hour, and the reaction includes a copolymer. A solution was obtained.

After completion of the reaction, the solution was cooled to room temperature, and then 10 g of glycidyl methacrylate, 0.1 g of p-methoxyphenol and 0.3 g of tetrabutylammonium bromide were added to the reaction solution and stirred until it was completely dissolved. Thereafter, the temperature of the solution was raised to 80 ° C., and an addition reaction between the carboxylic acid in the copolymer and the epoxy moiety in glycidyl methacrylate was performed for 16 hours. Thereafter, the solution was cooled to room temperature to obtain a copolymer (A-1) as a resin solution.

[Synthesis Example 2] to [Synthesis Example 7]
Copolymers (A-2) to (A-7) were respectively synthesized in the same manner as in Synthesis Example 1 except that the amount of each compound was changed to the composition described in Table 1.

[Synthesis Example 8]
(Synthesis of copolymer (A-8))
After the flask equipped with a reflux was purged with nitrogen, 3.0 g of 2,2′-azoisobutyronitrile (polymerization initiator), 150 g of ethyl lactate (solvent), 5 g of acrylic acid, 7 g of methacrylic acid, α-methyl- 35 g of p-hydroxystyrene, 24 g of isobornyl acrylate and 29 g of n-butyl acrylate were charged and stirred until the solid content was completely dissolved. After complete dissolution, the temperature of the solution was raised to 80 ° C., polymerization was performed at this temperature for 7 hours, and then the solution was heated to 100 ° C. and polymerization was performed for 1 hour. Thereafter, the solution was cooled to room temperature to obtain a copolymer (A-8) as a resin solution.

[Synthesis Example 9]
A copolymer (A-9) was synthesized in the same manner as in Synthesis Example 8 except that the amount of each compound was changed to the composition shown in Table 1.

[Example 1] to [Example 9]
As shown in Table 2, (A), (B), (C) and (D) are weighed in parts by weight (g unit), and SF-8428 (manufactured by Toray Dow Corning) 0 as a surfactant. .3 g was weighed into a sample tube. At that time, the alkali-soluble resin was added so that the solid content was 100 g. To this, ethyl lactate as a solvent was added so as to be 150 g including the amount brought in from the resin solution. Subsequently, it stirred until it melt | dissolved completely and the radiation-curable resin composition for glass etching was obtained.

[Comparative Example 1] to [Comparative Example 7]
A radiation curable resin composition for glass etching was obtained in the same manner as in Examples 1 to 9, except that (A), (B), (C) and (D) were changed to the amounts shown in Table 2.

Using the obtained radiation-curable resin composition for glass etching, the physical properties were evaluated as follows. The obtained results are shown in Table 3.
Evaluation of characteristics
1) After applying the above-mentioned radiation curable resin composition for glass etching on a glass substrate (PD200 manufactured by Asahi Glass Co., Ltd.) cut out to a resolution of about 10 cm square, using a hot plate at 100 ° C. The film was baked for 5 minutes to form a coating film having a thickness of 20 μm. Next, it exposed with the ultraviolet ray of 600 mJ / cm < ² > using the ultrahigh pressure mercury lamp (USH-1000KS made by USHIO INC.) Through the pattern mask for resolution measurement. This was developed with a 2.38% aqueous solution of tetramethylammonium hydroxide. Thereafter, it was washed with running water with deionized water and spin-dried to obtain a patterned cured product as a test specimen. Thereafter, it was heated in an oven at 130 ° C. for 30 minutes. This was observed with a scanning electron microscope and the resolution was measured. Here, the resolution is determined by resolving a rectangular pattern of 15 × 75 μm, and “◯” indicates a case where it is resolved and “×” indicates a case where it is not resolved.

2) Resistance to hydrofluoric acid solution
The glass substrate having the patterned cured product obtained in 1) is immersed as a test body in 9% hydrofluoric acid and 9% sulfuric acid aqueous solution for 10 minutes at room temperature. Then, it was washed with water and dried. The case where the patterned cured product was not peeled off from the glass substrate was designated as “◯”, and the case where it was peeled off was designated as “x”.

3) Side etching (etching isotropic) evaluation
The substrate obtained in 2) was immersed in a stripping solution THB-S2 (manufactured by JSR) at 50 ° C. for 10 minutes with stirring to obtain a test object. The cross section of the specimen was observed with an inspection operation type electron microscope, and as shown in FIG. 1, the pattern dimension (w ₁ ), the lateral etching amount (w ₂ ), and the vertical etching amount (d) (unit) : Μm) was measured and substituted into the above-described equation (Eq-1) to determine the side etching value.

The case where the side etching value is less than 3 is “◎”, the case where it is 3 or more and less than 5 is “◯”, and the case where it is 5 or more is “x”.
4) Peelability
3) The obtained specimen was observed with a scanning electron microscope, and “○” was given when no resist residue was found, and “X” was given when a residue was found.

It is sectional drawing of the glass substrate etched after apply | coating a resist composition.

Explanation of symbols

1: Glass substrate 2: Resist composition w ₁ : Pattern dimension w ₂ : Etching amount in the horizontal direction d: Etching amount in the vertical direction

Claims (5)

(A) 1 to 40% by weight of the structural unit derived from the radically polymerizable compound (a) having a carboxyl group, the phenolic hydroxyl group after polymerization of the radically polymerizable compound (b-1) or copolymer having a phenolic hydroxyl group 1 to 50% by weight of a structural unit having a phenolic hydroxyl group derived from the radically polymerizable compound (b-2) having a functional group that can be converted into a functional group, and the remainder is the compound (a), (b-1), (D) radical polymerizable compound having an epoxy group (d) with respect to 100 parts by weight of a copolymer which is a structural unit derived from another radical polymerizable compound (c) other than (b-2) and the following compound (d) An unsaturated group-containing alkali-soluble resin obtained by reacting 1 to 20 parts by weight;
(B) a compound having at least one ethylenically unsaturated double bond;
(C) a radiation-sensitive radical polymerization initiator, a radiation curable resin composition for etching glass into a desired pattern,
The radiation curable resin composition for glass etching, wherein the radiation curable resin composition contains (D) a silane coupling agent having a trialkoxysilyl group.   The radiation curable resin composition for glass etching according to claim 1, wherein the radical polymerizable compound (b-1) is α-methyl-p-hydroxystyrene. The radical polymerizable compound (d) having an epoxy group is glycidyl (meth) acrylate, glycidyl α-ethyl (meth) acrylate, glycidyl α-n-propyl (meth) acrylate, glycidyl α-n-butyl (meth) acrylate. 3,4-epoxybutyl (
The radiation curable composition for glass etching according to claim 1 or 2, which is a compound selected from the group consisting of (meth) acrylate, 6,7-epoxyheptyl (meth) acrylate and cyclohexene oxide (meth) acrylate. Resin composition. The silane coupling agent (D) is trimethoxysilylbenzoic acid, γ-methacryloxypropyltrimethoxysilane, vinyltrimethoxysilane, γ-isocyanatopropyltriethoxysilane, 3-glycidoxypropyltrimethoxysilane, and β. -(3,
The radiation curable resin composition for glass etching according to any one of claims 1 to 3, which is a silane coupling agent selected from the group consisting of 4-epoxycyclohexyl) ethyltrimethoxysilane.   A radiation curable resist resin composition for glass etching according to any one of claims 1 to 4 is applied onto a glass substrate to form a resist film, and the glass substrate is etched using hydrofluoric acid. A method for producing a glass substrate.

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