JP5360059B2 - Negative radiation sensitive resin composition - Google Patents
Negative radiation sensitive resin composition Download PDFInfo
- Publication number
- JP5360059B2 JP5360059B2 JP2010518972A JP2010518972A JP5360059B2 JP 5360059 B2 JP5360059 B2 JP 5360059B2 JP 2010518972 A JP2010518972 A JP 2010518972A JP 2010518972 A JP2010518972 A JP 2010518972A JP 5360059 B2 JP5360059 B2 JP 5360059B2
- Authority
- JP
- Japan
- Prior art keywords
- meth
- acrylate
- sensitive resin
- radiation
- resin composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 122
- 239000011342 resin composition Substances 0.000 title claims abstract description 72
- 239000011347 resin Substances 0.000 claims abstract description 133
- 229920005989 resin Polymers 0.000 claims abstract description 133
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims abstract description 100
- 239000003960 organic solvent Substances 0.000 claims abstract description 45
- 150000001875 compounds Chemical class 0.000 claims abstract description 30
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 10
- -1 diethylene glycol dialkyl ethers Chemical class 0.000 claims description 53
- MTHSVFCYNBDYFN-UHFFFAOYSA-N anhydrous diethylene glycol Natural products OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 36
- 229920006395 saturated elastomer Polymers 0.000 claims description 26
- 239000007870 radical polymerization initiator Substances 0.000 claims description 16
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 12
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 11
- 150000002430 hydrocarbons Chemical class 0.000 claims description 8
- 125000004432 carbon atom Chemical group C* 0.000 claims description 5
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 5
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 claims description 4
- 229930195733 hydrocarbon Natural products 0.000 claims description 3
- 239000004215 Carbon black (E152) Substances 0.000 claims description 2
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 2
- 239000012298 atmosphere Substances 0.000 abstract description 2
- 239000003999 initiator Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 123
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 116
- 238000000034 method Methods 0.000 description 45
- 239000000758 substrate Substances 0.000 description 40
- 238000004528 spin coating Methods 0.000 description 29
- 239000000178 monomer Substances 0.000 description 23
- 238000007747 plating Methods 0.000 description 18
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 15
- 239000000243 solution Substances 0.000 description 13
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 11
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 10
- 150000003254 radicals Chemical class 0.000 description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- 238000006116 polymerization reaction Methods 0.000 description 9
- 238000009835 boiling Methods 0.000 description 8
- 238000011156 evaluation Methods 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- 239000004094 surface-active agent Substances 0.000 description 8
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- QYGBYAQGBVHMDD-XQRVVYSFSA-N (z)-2-cyano-3-thiophen-2-ylprop-2-enoic acid Chemical compound OC(=O)C(\C#N)=C/C1=CC=CS1 QYGBYAQGBVHMDD-XQRVVYSFSA-N 0.000 description 6
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 239000004034 viscosity adjusting agent Substances 0.000 description 6
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 5
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 5
- 206010040844 Skin exfoliation Diseases 0.000 description 5
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 5
- 230000008033 biological extinction Effects 0.000 description 5
- 239000003086 colorant Substances 0.000 description 5
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 5
- 239000000945 filler Substances 0.000 description 5
- 229920001223 polyethylene glycol Polymers 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- DTGKSKDOIYIVQL-WEDXCCLWSA-N (+)-borneol Chemical group C1C[C@@]2(C)[C@@H](O)C[C@@H]1C2(C)C DTGKSKDOIYIVQL-WEDXCCLWSA-N 0.000 description 4
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 4
- JAGRUUPXPPLSRX-UHFFFAOYSA-N 4-prop-1-en-2-ylphenol Chemical compound CC(=C)C1=CC=C(O)C=C1 JAGRUUPXPPLSRX-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- 239000002202 Polyethylene glycol Substances 0.000 description 4
- 239000006087 Silane Coupling Agent Substances 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 4
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 4
- 239000003112 inhibitor Substances 0.000 description 4
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 4
- 239000003505 polymerization initiator Substances 0.000 description 4
- 150000005846 sugar alcohols Polymers 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- 238000012719 thermal polymerization Methods 0.000 description 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 3
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 3
- XXHDHAPOSIFMIG-UHFFFAOYSA-N 2-[2-[2-(2-hydroxyethoxy)ethoxy]ethoxy]-1-phenoxyethanol Chemical compound OCCOCCOCCOCC(O)OC1=CC=CC=C1 XXHDHAPOSIFMIG-UHFFFAOYSA-N 0.000 description 3
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000007983 Tris buffer Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 150000008064 anhydrides Chemical class 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 150000004292 cyclic ethers Chemical class 0.000 description 3
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 3
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229940116333 ethyl lactate Drugs 0.000 description 3
- 238000010528 free radical solution polymerization reaction Methods 0.000 description 3
- 150000002576 ketones Chemical class 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 230000008961 swelling Effects 0.000 description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 3
- 0 *c1c(*)nc(-c2ccc(*)cc2*)[n]1C(c1c(*)cc(*)cc1)(N=C1*)N=C1c1ccccc1 Chemical compound *c1c(*)nc(-c2ccc(*)cc2*)[n]1C(c1c(*)cc(*)cc1)(N=C1*)N=C1c1ccccc1 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 2
- NLOCXQZOOGBEEN-UHFFFAOYSA-N 1-(1-hydroxypropan-2-yloxy)-3-phenoxypropan-2-ol Chemical compound OCC(C)OCC(O)COC1=CC=CC=C1 NLOCXQZOOGBEEN-UHFFFAOYSA-N 0.000 description 2
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- VZKKRTQZZFFVEZ-UHFFFAOYSA-N 1-[1-(1-hydroxypropan-2-yloxy)propan-2-yloxy]-3-phenoxypropan-2-ol Chemical compound OCC(C)OCC(C)OCC(O)COC1=CC=CC=C1 VZKKRTQZZFFVEZ-UHFFFAOYSA-N 0.000 description 2
- DAUIDEBCIYVNKC-UHFFFAOYSA-N 1-[1-[1-(1-hydroxypropan-2-yloxy)propan-2-yloxy]propan-2-yloxy]-3-phenoxypropan-2-ol Chemical compound OCC(C)OCC(C)OCC(C)OCC(O)COC1=CC=CC=C1 DAUIDEBCIYVNKC-UHFFFAOYSA-N 0.000 description 2
- UAJRSHJHFRVGMG-UHFFFAOYSA-N 1-ethenyl-4-methoxybenzene Chemical compound COC1=CC=C(C=C)C=C1 UAJRSHJHFRVGMG-UHFFFAOYSA-N 0.000 description 2
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 2
- OJVAMHKKJGICOG-UHFFFAOYSA-N 2,5-hexanedione Chemical compound CC(=O)CCC(C)=O OJVAMHKKJGICOG-UHFFFAOYSA-N 0.000 description 2
- JKQRNTIBBOTABS-UHFFFAOYSA-N 2-(2,4-dichlorophenyl)-1-[2-(2,4-dichlorophenyl)-4,5-diphenylimidazol-2-yl]-4,5-diphenylimidazole Chemical compound ClC1=CC(Cl)=CC=C1C(N1C2(N=C(C(=N2)C=2C=CC=CC=2)C=2C=CC=CC=2)C=2C(=CC(Cl)=CC=2)Cl)=NC(C=2C=CC=CC=2)=C1C1=CC=CC=C1 JKQRNTIBBOTABS-UHFFFAOYSA-N 0.000 description 2
- MHDULSOPQSUKBQ-UHFFFAOYSA-N 2-(2-chlorophenyl)-1-[2-(2-chlorophenyl)-4,5-diphenylimidazol-2-yl]-4,5-diphenylimidazole Chemical compound ClC1=CC=CC=C1C(N1C2(N=C(C(=N2)C=2C=CC=CC=2)C=2C=CC=CC=2)C=2C(=CC=CC=2)Cl)=NC(C=2C=CC=CC=2)=C1C1=CC=CC=C1 MHDULSOPQSUKBQ-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- ZHCHRKVXJJJZFX-UHFFFAOYSA-N 2-[2-(2-hydroxyethoxy)ethoxy]-1-phenoxyethanol Chemical compound OCCOCCOCC(O)OC1=CC=CC=C1 ZHCHRKVXJJJZFX-UHFFFAOYSA-N 0.000 description 2
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 2
- UHFFVFAKEGKNAQ-UHFFFAOYSA-N 2-benzyl-2-(dimethylamino)-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C=1C=C(N2CCOCC2)C=CC=1C(=O)C(CC)(N(C)C)CC1=CC=CC=C1 UHFFVFAKEGKNAQ-UHFFFAOYSA-N 0.000 description 2
- JESXATFQYMPTNL-UHFFFAOYSA-N 2-ethenylphenol Chemical compound OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
- WHBMMWSBFZVSSR-UHFFFAOYSA-N 3-hydroxybutyric acid Chemical compound CC(O)CC(O)=O WHBMMWSBFZVSSR-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- NGSWKAQJJWESNS-UHFFFAOYSA-N 4-coumaric acid Chemical compound OC(=O)C=CC1=CC=C(O)C=C1 NGSWKAQJJWESNS-UHFFFAOYSA-N 0.000 description 2
- FUGYGGDSWSUORM-UHFFFAOYSA-N 4-hydroxystyrene Chemical compound OC1=CC=C(C=C)C=C1 FUGYGGDSWSUORM-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 2
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 2
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 239000000440 bentonite Substances 0.000 description 2
- 229910000278 bentonite Inorganic materials 0.000 description 2
- SVPXDRXYRYOSEX-UHFFFAOYSA-N bentoquatam Chemical compound O.O=[Si]=O.O=[Al]O[Al]=O SVPXDRXYRYOSEX-UHFFFAOYSA-N 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- QUKGYYKBILRGFE-UHFFFAOYSA-N benzyl acetate Chemical compound CC(=O)OCC1=CC=CC=C1 QUKGYYKBILRGFE-UHFFFAOYSA-N 0.000 description 2
- VYHBFRJRBHMIQZ-UHFFFAOYSA-N bis[4-(diethylamino)phenyl]methanone Chemical compound C1=CC(N(CC)CC)=CC=C1C(=O)C1=CC=C(N(CC)CC)C=C1 VYHBFRJRBHMIQZ-UHFFFAOYSA-N 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- QSAWQNUELGIYBC-UHFFFAOYSA-N cyclohexane-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCCCC1C(O)=O QSAWQNUELGIYBC-UHFFFAOYSA-N 0.000 description 2
- STZIXLPVKZUAMV-UHFFFAOYSA-N cyclopentane-1,1,2,2-tetracarboxylic acid Chemical compound OC(=O)C1(C(O)=O)CCCC1(C(O)=O)C(O)=O STZIXLPVKZUAMV-UHFFFAOYSA-N 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- CKSRFHWWBKRUKA-UHFFFAOYSA-N ethyl 2-ethoxyacetate Chemical compound CCOCC(=O)OCC CKSRFHWWBKRUKA-UHFFFAOYSA-N 0.000 description 2
- GFUIDHWFLMPAGY-UHFFFAOYSA-N ethyl 2-hydroxy-2-methylpropanoate Chemical compound CCOC(=O)C(C)(C)O GFUIDHWFLMPAGY-UHFFFAOYSA-N 0.000 description 2
- ZANNOFHADGWOLI-UHFFFAOYSA-N ethyl 2-hydroxyacetate Chemical compound CCOC(=O)CO ZANNOFHADGWOLI-UHFFFAOYSA-N 0.000 description 2
- WHRLOJCOIKOQGL-UHFFFAOYSA-N ethyl 2-methoxypropanoate Chemical compound CCOC(=O)C(C)OC WHRLOJCOIKOQGL-UHFFFAOYSA-N 0.000 description 2
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 2
- MTZQAGJQAFMTAQ-UHFFFAOYSA-N ethyl benzoate Chemical compound CCOC(=O)C1=CC=CC=C1 MTZQAGJQAFMTAQ-UHFFFAOYSA-N 0.000 description 2
- 235000011187 glycerol Nutrition 0.000 description 2
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 235000014413 iron hydroxide Nutrition 0.000 description 2
- NCNCGGDMXMBVIA-UHFFFAOYSA-L iron(ii) hydroxide Chemical compound [OH-].[OH-].[Fe+2] NCNCGGDMXMBVIA-UHFFFAOYSA-L 0.000 description 2
- KQNPFQTWMSNSAP-UHFFFAOYSA-N isobutyric acid Chemical compound CC(C)C(O)=O KQNPFQTWMSNSAP-UHFFFAOYSA-N 0.000 description 2
- HJOVHMDZYOCNQW-UHFFFAOYSA-N isophorone Chemical compound CC1=CC(=O)CC(C)(C)C1 HJOVHMDZYOCNQW-UHFFFAOYSA-N 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- YSGBMDFJWFIEDF-UHFFFAOYSA-N methyl 2-hydroxy-3-methylbutanoate Chemical compound COC(=O)C(O)C(C)C YSGBMDFJWFIEDF-UHFFFAOYSA-N 0.000 description 2
- HSDFKDZBJMDHFF-UHFFFAOYSA-N methyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OC HSDFKDZBJMDHFF-UHFFFAOYSA-N 0.000 description 2
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 2
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- ZWRUINPWMLAQRD-UHFFFAOYSA-N nonan-1-ol Chemical compound CCCCCCCCCO ZWRUINPWMLAQRD-UHFFFAOYSA-N 0.000 description 2
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 150000001451 organic peroxides Chemical class 0.000 description 2
- GJYCVCVHRSWLNY-UHFFFAOYSA-N ortho-butylphenol Natural products CCCCC1=CC=CC=C1O GJYCVCVHRSWLNY-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 2
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 229920001451 polypropylene glycol Polymers 0.000 description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 2
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 2
- 238000010526 radical polymerization reaction Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L sodium carbonate Substances [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- GEHJYWRUCIMESM-UHFFFAOYSA-L sodium sulfite Chemical compound [Na+].[Na+].[O-]S([O-])=O GEHJYWRUCIMESM-UHFFFAOYSA-L 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- JMSVCTWVEWCHDZ-UHFFFAOYSA-N syringic acid Chemical compound COC1=CC(C(O)=O)=CC(OC)=C1O JMSVCTWVEWCHDZ-UHFFFAOYSA-N 0.000 description 2
- CNHDIAIOKMXOLK-UHFFFAOYSA-N toluquinol Chemical compound CC1=CC(O)=CC=C1O CNHDIAIOKMXOLK-UHFFFAOYSA-N 0.000 description 2
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 1
- HGXJDMCMYLEZMJ-UHFFFAOYSA-N (2-methylpropan-2-yl)oxy 2,2-dimethylpropaneperoxoate Chemical compound CC(C)(C)OOOC(=O)C(C)(C)C HGXJDMCMYLEZMJ-UHFFFAOYSA-N 0.000 description 1
- GGAUUQHSCNMCAU-ZXZARUISSA-N (2s,3r)-butane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C[C@H](C(O)=O)[C@H](C(O)=O)CC(O)=O GGAUUQHSCNMCAU-ZXZARUISSA-N 0.000 description 1
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 1
- PSGCQDPCAWOCSH-UHFFFAOYSA-N (4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl) prop-2-enoate Chemical compound C1CC2(C)C(OC(=O)C=C)CC1C2(C)C PSGCQDPCAWOCSH-UHFFFAOYSA-N 0.000 description 1
- AFENDNXGAFYKQO-VKHMYHEASA-N (S)-2-hydroxybutyric acid Chemical compound CC[C@H](O)C(O)=O AFENDNXGAFYKQO-VKHMYHEASA-N 0.000 description 1
- WBYWAXJHAXSJNI-VOTSOKGWSA-M .beta-Phenylacrylic acid Natural products [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 description 1
- JWTGRKUQJXIWCV-UHFFFAOYSA-N 1,2,3-trihydroxypropyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(O)C(O)CO JWTGRKUQJXIWCV-UHFFFAOYSA-N 0.000 description 1
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 1
- BPXVHIRIPLPOPT-UHFFFAOYSA-N 1,3,5-tris(2-hydroxyethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound OCCN1C(=O)N(CCO)C(=O)N(CCO)C1=O BPXVHIRIPLPOPT-UHFFFAOYSA-N 0.000 description 1
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 1
- XLTMWFMRJZDFFD-UHFFFAOYSA-N 1-[(2-chloro-4-nitrophenyl)diazenyl]naphthalen-2-ol Chemical compound OC1=CC=C2C=CC=CC2=C1N=NC1=CC=C([N+]([O-])=O)C=C1Cl XLTMWFMRJZDFFD-UHFFFAOYSA-N 0.000 description 1
- OSNILPMOSNGHLC-UHFFFAOYSA-N 1-[4-methoxy-3-(piperidin-1-ylmethyl)phenyl]ethanone Chemical compound COC1=CC=C(C(C)=O)C=C1CN1CCCCC1 OSNILPMOSNGHLC-UHFFFAOYSA-N 0.000 description 1
- JWYVGKFDLWWQJX-UHFFFAOYSA-N 1-ethenylazepan-2-one Chemical compound C=CN1CCCCCC1=O JWYVGKFDLWWQJX-UHFFFAOYSA-N 0.000 description 1
- SDXHBDVTZNMBEW-UHFFFAOYSA-N 1-ethoxy-2-(2-hydroxyethoxy)ethanol Chemical compound CCOC(O)COCCO SDXHBDVTZNMBEW-UHFFFAOYSA-N 0.000 description 1
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 1
- BPIUIOXAFBGMNB-UHFFFAOYSA-N 1-hexoxyhexane Chemical compound CCCCCCOCCCCCC BPIUIOXAFBGMNB-UHFFFAOYSA-N 0.000 description 1
- CSCSROFYRUZJJH-UHFFFAOYSA-N 1-methoxyethane-1,2-diol Chemical compound COC(O)CO CSCSROFYRUZJJH-UHFFFAOYSA-N 0.000 description 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 description 1
- XYHKNCXZYYTLRG-UHFFFAOYSA-N 1h-imidazole-2-carbaldehyde Chemical compound O=CC1=NC=CN1 XYHKNCXZYYTLRG-UHFFFAOYSA-N 0.000 description 1
- BRXKVEIJEXJBFF-UHFFFAOYSA-N 2,2-bis(hydroxymethyl)-3-methylbutane-1,4-diol Chemical compound OCC(C)C(CO)(CO)CO BRXKVEIJEXJBFF-UHFFFAOYSA-N 0.000 description 1
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 1
- LJXVTPXRHKCISP-UHFFFAOYSA-N 2-(2,4-dimethylphenyl)-1-[2-(2,4-dimethylphenyl)-4,5-diphenylimidazol-2-yl]-4,5-diphenylimidazole Chemical compound CC1=CC(C)=CC=C1C(N1C2(N=C(C(=N2)C=2C=CC=CC=2)C=2C=CC=CC=2)C=2C(=CC(C)=CC=2)C)=NC(C=2C=CC=CC=2)=C1C1=CC=CC=C1 LJXVTPXRHKCISP-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- AVTLBBWTUPQRAY-UHFFFAOYSA-N 2-(2-cyanobutan-2-yldiazenyl)-2-methylbutanenitrile Chemical compound CCC(C)(C#N)N=NC(C)(CC)C#N AVTLBBWTUPQRAY-UHFFFAOYSA-N 0.000 description 1
- HLIQLHSBZXDKLV-UHFFFAOYSA-N 2-(2-hydroxyethoxy)-1-phenoxyethanol Chemical compound OCCOCC(O)OC1=CC=CC=C1 HLIQLHSBZXDKLV-UHFFFAOYSA-N 0.000 description 1
- IAMASUILMZETHW-UHFFFAOYSA-N 2-(2-hydroxyethoxy)-1-phenoxyethanol;prop-2-enoic acid Chemical compound OC(=O)C=C.OCCOCC(O)OC1=CC=CC=C1 IAMASUILMZETHW-UHFFFAOYSA-N 0.000 description 1
- WSZWUSHWRSORQG-UHFFFAOYSA-N 2-(2-methylphenyl)-1-[2-(2-methylphenyl)-4,5-diphenylimidazol-2-yl]-4,5-diphenylimidazole Chemical compound CC1=CC=CC=C1C(N1C2(N=C(C(=N2)C=2C=CC=CC=2)C=2C=CC=CC=2)C=2C(=CC=CC=2)C)=NC(C=2C=CC=CC=2)=C1C1=CC=CC=C1 WSZWUSHWRSORQG-UHFFFAOYSA-N 0.000 description 1
- LEJBBGNFPAFPKQ-UHFFFAOYSA-N 2-(2-prop-2-enoyloxyethoxy)ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOC(=O)C=C LEJBBGNFPAFPKQ-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- FALRKNHUBBKYCC-UHFFFAOYSA-N 2-(chloromethyl)pyridine-3-carbonitrile Chemical compound ClCC1=NC=CC=C1C#N FALRKNHUBBKYCC-UHFFFAOYSA-N 0.000 description 1
- PFHOSZAOXCYAGJ-UHFFFAOYSA-N 2-[(2-cyano-4-methoxy-4-methylpentan-2-yl)diazenyl]-4-methoxy-2,4-dimethylpentanenitrile Chemical compound COC(C)(C)CC(C)(C#N)N=NC(C)(C#N)CC(C)(C)OC PFHOSZAOXCYAGJ-UHFFFAOYSA-N 0.000 description 1
- WYGWHHGCAGTUCH-UHFFFAOYSA-N 2-[(2-cyano-4-methylpentan-2-yl)diazenyl]-2,4-dimethylpentanenitrile Chemical compound CC(C)CC(C)(C#N)N=NC(C)(C#N)CC(C)C WYGWHHGCAGTUCH-UHFFFAOYSA-N 0.000 description 1
- IPVAVWWFUTUCQX-UHFFFAOYSA-N 2-[2-(2-hydroxyethoxy)ethoxy]-1-phenoxyethanol;prop-2-enoic acid Chemical compound OC(=O)C=C.OCCOCCOCC(O)OC1=CC=CC=C1 IPVAVWWFUTUCQX-UHFFFAOYSA-N 0.000 description 1
- HCLJOFJIQIJXHS-UHFFFAOYSA-N 2-[2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOCCOC(=O)C=C HCLJOFJIQIJXHS-UHFFFAOYSA-N 0.000 description 1
- DNUYOWCKBJFOGS-UHFFFAOYSA-N 2-[[10-(2,2-dicarboxyethyl)anthracen-9-yl]methyl]propanedioic acid Chemical compound C1=CC=C2C(CC(C(=O)O)C(O)=O)=C(C=CC=C3)C3=C(CC(C(O)=O)C(O)=O)C2=C1 DNUYOWCKBJFOGS-UHFFFAOYSA-N 0.000 description 1
- BOBATFKNMFWLFG-UHFFFAOYSA-N 2-amino-2-cyano-n-methylacetamide Chemical compound CNC(=O)C(N)C#N BOBATFKNMFWLFG-UHFFFAOYSA-N 0.000 description 1
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- 125000004182 2-chlorophenyl group Chemical group [H]C1=C([H])C(Cl)=C(*)C([H])=C1[H] 0.000 description 1
- AIXYXZFKOULKBD-UHFFFAOYSA-N 2-pentoxybenzene-1,4-diol Chemical compound CCCCCOC1=CC(O)=CC=C1O AIXYXZFKOULKBD-UHFFFAOYSA-N 0.000 description 1
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- WYYQKWASBLTRIW-UHFFFAOYSA-N 2-trimethoxysilylbenzoic acid Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1C(O)=O WYYQKWASBLTRIW-UHFFFAOYSA-N 0.000 description 1
- RBTBFTRPCNLSDE-UHFFFAOYSA-N 3,7-bis(dimethylamino)phenothiazin-5-ium Chemical compound C1=CC(N(C)C)=CC2=[S+]C3=CC(N(C)C)=CC=C3N=C21 RBTBFTRPCNLSDE-UHFFFAOYSA-N 0.000 description 1
- GWYFCOCPABKNJV-UHFFFAOYSA-M 3-Methylbutanoic acid Natural products CC(C)CC([O-])=O GWYFCOCPABKNJV-UHFFFAOYSA-M 0.000 description 1
- WVRNUXJQQFPNMN-VAWYXSNFSA-N 3-[(e)-dodec-1-enyl]oxolane-2,5-dione Chemical compound CCCCCCCCCC\C=C\C1CC(=O)OC1=O WVRNUXJQQFPNMN-VAWYXSNFSA-N 0.000 description 1
- YNGIFMKMDRDNBQ-UHFFFAOYSA-N 3-ethenylphenol Chemical compound OC1=CC=CC(C=C)=C1 YNGIFMKMDRDNBQ-UHFFFAOYSA-N 0.000 description 1
- AYKYXWQEBUNJCN-UHFFFAOYSA-N 3-methylfuran-2,5-dione Chemical compound CC1=CC(=O)OC1=O AYKYXWQEBUNJCN-UHFFFAOYSA-N 0.000 description 1
- OFNISBHGPNMTMS-UHFFFAOYSA-N 3-methylideneoxolane-2,5-dione Chemical compound C=C1CC(=O)OC1=O OFNISBHGPNMTMS-UHFFFAOYSA-N 0.000 description 1
- JIGUICYYOYEXFS-UHFFFAOYSA-N 3-tert-butylbenzene-1,2-diol Chemical compound CC(C)(C)C1=CC=CC(O)=C1O JIGUICYYOYEXFS-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- JLBJTVDPSNHSKJ-UHFFFAOYSA-N 4-Methylstyrene Chemical compound CC1=CC=C(C=C)C=C1 JLBJTVDPSNHSKJ-UHFFFAOYSA-N 0.000 description 1
- ODJUOZPKKHIEOZ-UHFFFAOYSA-N 4-[2-(4-hydroxy-3,5-dimethylphenyl)propan-2-yl]-2,6-dimethylphenol Chemical compound CC1=C(O)C(C)=CC(C(C)(C)C=2C=C(C)C(O)=C(C)C=2)=C1 ODJUOZPKKHIEOZ-UHFFFAOYSA-N 0.000 description 1
- WXYSZTISEJBRHW-UHFFFAOYSA-N 4-[2-[4-[1,1-bis(4-hydroxyphenyl)ethyl]phenyl]propan-2-yl]phenol Chemical compound C=1C=C(C(C)(C=2C=CC(O)=CC=2)C=2C=CC(O)=CC=2)C=CC=1C(C)(C)C1=CC=C(O)C=C1 WXYSZTISEJBRHW-UHFFFAOYSA-N 0.000 description 1
- UNDXPKDBFOOQFC-UHFFFAOYSA-N 4-[2-nitro-4-(trifluoromethyl)phenyl]morpholine Chemical compound [O-][N+](=O)C1=CC(C(F)(F)F)=CC=C1N1CCOCC1 UNDXPKDBFOOQFC-UHFFFAOYSA-N 0.000 description 1
- 229940090248 4-hydroxybenzoic acid Drugs 0.000 description 1
- KIIIPQXXLVCCQP-UHFFFAOYSA-N 4-propoxyphenol Chemical compound CCCOC1=CC=C(O)C=C1 KIIIPQXXLVCCQP-UHFFFAOYSA-N 0.000 description 1
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 1
- MWSKJDNQKGCKPA-UHFFFAOYSA-N 6-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1CC(C)=CC2C(=O)OC(=O)C12 MWSKJDNQKGCKPA-UHFFFAOYSA-N 0.000 description 1
- FIHBHSQYSYVZQE-UHFFFAOYSA-N 6-prop-2-enoyloxyhexyl prop-2-enoate Chemical compound C=CC(=O)OCCCCCCOC(=O)C=C FIHBHSQYSYVZQE-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- LCFVJGUPQDGYKZ-UHFFFAOYSA-N Bisphenol A diglycidyl ether Chemical compound C=1C=C(OCC2OC2)C=CC=1C(C)(C)C(C=C1)=CC=C1OCC1CO1 LCFVJGUPQDGYKZ-UHFFFAOYSA-N 0.000 description 1
- 239000005635 Caprylic acid (CAS 124-07-2) Substances 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical class O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- WBYWAXJHAXSJNI-SREVYHEPSA-N Cinnamic acid Chemical compound OC(=O)\C=C/C1=CC=CC=C1 WBYWAXJHAXSJNI-SREVYHEPSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 1
- 239000004606 Fillers/Extenders Substances 0.000 description 1
- YIVJZNGAASQVEM-UHFFFAOYSA-N Lauroyl peroxide Chemical compound CCCCCCCCCCCC(=O)OOC(=O)CCCCCCCCCCC YIVJZNGAASQVEM-UHFFFAOYSA-N 0.000 description 1
- GYCMBHHDWRMZGG-UHFFFAOYSA-N Methylacrylonitrile Chemical compound CC(=C)C#N GYCMBHHDWRMZGG-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 1
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 description 1
- QVHMSMOUDQXMRS-UHFFFAOYSA-N PPG n4 Chemical compound CC(O)COC(C)COC(C)COC(C)CO QVHMSMOUDQXMRS-UHFFFAOYSA-N 0.000 description 1
- SJEYSFABYSGQBG-UHFFFAOYSA-M Patent blue Chemical compound [Na+].C1=CC(N(CC)CC)=CC=C1C(C=1C(=CC(=CC=1)S([O-])(=O)=O)S([O-])(=O)=O)=C1C=CC(=[N+](CC)CC)C=C1 SJEYSFABYSGQBG-UHFFFAOYSA-M 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- MZVQCMJNVPIDEA-UHFFFAOYSA-N [CH2]CN(CC)CC Chemical group [CH2]CN(CC)CC MZVQCMJNVPIDEA-UHFFFAOYSA-N 0.000 description 1
- NOZAQBYNLKNDRT-UHFFFAOYSA-N [diacetyloxy(ethenyl)silyl] acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)=O)C=C NOZAQBYNLKNDRT-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 229940022663 acetate Drugs 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 239000000980 acid dye Substances 0.000 description 1
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 239000002671 adjuvant Substances 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 230000003254 anti-foaming effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000010426 asphalt Substances 0.000 description 1
- IRERQBUNZFJFGC-UHFFFAOYSA-L azure blue Chemical compound [Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Al+3].[Al+3].[Al+3].[Al+3].[Al+3].[Al+3].[S-]S[S-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-] IRERQBUNZFJFGC-UHFFFAOYSA-L 0.000 description 1
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 1
- 239000000981 basic dye Substances 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 229940007550 benzyl acetate Drugs 0.000 description 1
- GWYFCOCPABKNJV-UHFFFAOYSA-N beta-methyl-butyric acid Natural products CC(C)CC(O)=O GWYFCOCPABKNJV-UHFFFAOYSA-N 0.000 description 1
- 238000012662 bulk polymerization Methods 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 125000006226 butoxyethyl group Chemical group 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 235000011089 carbon dioxide Nutrition 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- PZTQVMXMKVTIRC-UHFFFAOYSA-L chembl2028348 Chemical compound [Ca+2].[O-]S(=O)(=O)C1=CC(C)=CC=C1N=NC1=C(O)C(C([O-])=O)=CC2=CC=CC=C12 PZTQVMXMKVTIRC-UHFFFAOYSA-L 0.000 description 1
- NLMHXPDMNXMQBY-UHFFFAOYSA-L chembl260999 Chemical compound [Na+].[Na+].C1=CC(NC(=O)C)=CC=C1N=NC(C(=CC1=C2)S([O-])(=O)=O)=C(O)C1=CC=C2NC(=O)NC1=CC=C(C(O)=C(N=NC=2C=CC=CC=2)C(=C2)S([O-])(=O)=O)C2=C1 NLMHXPDMNXMQBY-UHFFFAOYSA-L 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 235000013985 cinnamic acid Nutrition 0.000 description 1
- 229930016911 cinnamic acid Natural products 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 229910052570 clay Inorganic materials 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 125000000582 cycloheptyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- WTNDADANUZETTI-UHFFFAOYSA-N cyclohexane-1,2,4-tricarboxylic acid Chemical compound OC(=O)C1CCC(C(O)=O)C(C(O)=O)C1 WTNDADANUZETTI-UHFFFAOYSA-N 0.000 description 1
- VBWIZSYFQSOUFQ-UHFFFAOYSA-N cyclohexanecarbonitrile Chemical compound N#CC1CCCCC1 VBWIZSYFQSOUFQ-UHFFFAOYSA-N 0.000 description 1
- 125000000640 cyclooctyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
- 125000003493 decenyl group Chemical group [H]C([*])=C([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- MHDVGSVTJDSBDK-UHFFFAOYSA-N dibenzyl ether Chemical compound C=1C=CC=CC=1COCC1=CC=CC=C1 MHDVGSVTJDSBDK-UHFFFAOYSA-N 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- WYACBZDAHNBPPB-UHFFFAOYSA-N diethyl oxalate Chemical compound CCOC(=O)C(=O)OCC WYACBZDAHNBPPB-UHFFFAOYSA-N 0.000 description 1
- 125000001664 diethylamino group Chemical group [H]C([H])([H])C([H])([H])N(*)C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000000982 direct dye Substances 0.000 description 1
- HRMOLDWRTCFZRP-UHFFFAOYSA-L disodium 5-acetamido-3-[(4-acetamidophenyl)diazenyl]-4-hydroxynaphthalene-2,7-disulfonate Chemical compound [Na+].OC1=C(C(=CC2=CC(=CC(=C12)NC(C)=O)S(=O)(=O)[O-])S(=O)(=O)[O-])N=NC1=CC=C(C=C1)NC(C)=O.[Na+] HRMOLDWRTCFZRP-UHFFFAOYSA-L 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000010556 emulsion polymerization method Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 125000005448 ethoxyethyl group Chemical group [H]C([H])([H])C([H])([H])OC([H])([H])C([H])([H])* 0.000 description 1
- SZPUDSQPVUIVKC-UHFFFAOYSA-N ethoxymethyl prop-2-enoate Chemical compound CCOCOC(=O)C=C SZPUDSQPVUIVKC-UHFFFAOYSA-N 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
- 238000005227 gel permeation chromatography Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N hydrogen peroxide Substances OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- NWVVVBRKAWDGAB-UHFFFAOYSA-N hydroquinone methyl ether Natural products COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000001023 inorganic pigment Substances 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 235000010187 litholrubine BK Nutrition 0.000 description 1
- KKSDGJDHHZEWEP-UHFFFAOYSA-N m-hydroxycinnamic acid Natural products OC(=O)C=CC1=CC=CC(O)=C1 KKSDGJDHHZEWEP-UHFFFAOYSA-N 0.000 description 1
- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- IJFXRHURBJZNAO-UHFFFAOYSA-N meta--hydroxybenzoic acid Natural products OC(=O)C1=CC=CC(O)=C1 IJFXRHURBJZNAO-UHFFFAOYSA-N 0.000 description 1
- 229940051142 metanil yellow Drugs 0.000 description 1
- NYGZLYXAPMMJTE-UHFFFAOYSA-M metanil yellow Chemical compound [Na+].[O-]S(=O)(=O)C1=CC=CC(N=NC=2C=CC(NC=3C=CC=CC=3)=CC=2)=C1 NYGZLYXAPMMJTE-UHFFFAOYSA-M 0.000 description 1
- FQPSGWSUVKBHSU-UHFFFAOYSA-N methacrylamide Chemical compound CC(=C)C(N)=O FQPSGWSUVKBHSU-UHFFFAOYSA-N 0.000 description 1
- ZQMHJBXHRFJKOT-UHFFFAOYSA-N methyl 2-[(1-methoxy-2-methyl-1-oxopropan-2-yl)diazenyl]-2-methylpropanoate Chemical compound COC(=O)C(C)(C)N=NC(C)(C)C(=O)OC ZQMHJBXHRFJKOT-UHFFFAOYSA-N 0.000 description 1
- WBYWAXJHAXSJNI-UHFFFAOYSA-N methyl p-hydroxycinnamate Natural products OC(=O)C=CC1=CC=CC=C1 WBYWAXJHAXSJNI-UHFFFAOYSA-N 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 229960000907 methylthioninium chloride Drugs 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000002763 monocarboxylic acids Chemical class 0.000 description 1
- JIKUXBYRTXDNIY-UHFFFAOYSA-N n-methyl-n-phenylformamide Chemical compound O=CN(C)C1=CC=CC=C1 JIKUXBYRTXDNIY-UHFFFAOYSA-N 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- HDLRSIQOZFLEPK-UHFFFAOYSA-N naphthalene-1,2,5,8-tetracarboxylic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C2=C(C(O)=O)C(C(=O)O)=CC=C21 HDLRSIQOZFLEPK-UHFFFAOYSA-N 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- UMRZSTCPUPJPOJ-KNVOCYPGSA-N norbornane Chemical compound C1C[C@H]2CC[C@@H]1C2 UMRZSTCPUPJPOJ-KNVOCYPGSA-N 0.000 description 1
- PMOWTIHVNWZYFI-UHFFFAOYSA-N o-Coumaric acid Natural products OC(=O)C=CC1=CC=CC=C1O PMOWTIHVNWZYFI-UHFFFAOYSA-N 0.000 description 1
- 125000003261 o-tolyl group Chemical group [H]C1=C([H])C(*)=C(C([H])=C1[H])C([H])([H])[H] 0.000 description 1
- OTLDLKLSNZMTTA-UHFFFAOYSA-N octahydro-1h-4,7-methanoindene-1,5-diyldimethanol Chemical compound C1C2C3C(CO)CCC3C1C(CO)C2 OTLDLKLSNZMTTA-UHFFFAOYSA-N 0.000 description 1
- 229960002446 octanoic acid Drugs 0.000 description 1
- ZDHCZVWCTKTBRY-UHFFFAOYSA-N omega-Hydroxydodecanoic acid Natural products OCCCCCCCCCCCC(O)=O ZDHCZVWCTKTBRY-UHFFFAOYSA-N 0.000 description 1
- 239000012860 organic pigment Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 125000001037 p-tolyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C([H])([H])[H] 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- ODLMAHJVESYWTB-UHFFFAOYSA-N propylbenzene Chemical compound CCCC1=CC=CC=C1 ODLMAHJVESYWTB-UHFFFAOYSA-N 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- PYWVYCXTNDRMGF-UHFFFAOYSA-N rhodamine B Chemical compound [Cl-].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=CC=C1C(O)=O PYWVYCXTNDRMGF-UHFFFAOYSA-N 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 235000010265 sodium sulphite Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 229940014800 succinic anhydride Drugs 0.000 description 1
- 238000010558 suspension polymerization method Methods 0.000 description 1
- YIBXWXOYFGZLRU-UHFFFAOYSA-N syringic aldehyde Natural products CC12CCC(C3(CCC(=O)C(C)(C)C3CC=3)C)C=3C1(C)CCC2C1COC(C)(C)C(O)C(O)C1 YIBXWXOYFGZLRU-UHFFFAOYSA-N 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- KKSDGJDHHZEWEP-SNAWJCMRSA-N trans-3-coumaric acid Chemical compound OC(=O)\C=C\C1=CC=CC(O)=C1 KKSDGJDHHZEWEP-SNAWJCMRSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- FRGPKMWIYVTFIQ-UHFFFAOYSA-N triethoxy(3-isocyanatopropyl)silane Chemical compound CCO[Si](OCC)(OCC)CCCN=C=O FRGPKMWIYVTFIQ-UHFFFAOYSA-N 0.000 description 1
- 125000005591 trimellitate group Chemical group 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 235000014692 zinc oxide Nutrition 0.000 description 1
- NDKWCCLKSWNDBG-UHFFFAOYSA-N zinc;dioxido(dioxo)chromium Chemical compound [Zn+2].[O-][Cr]([O-])(=O)=O NDKWCCLKSWNDBG-UHFFFAOYSA-N 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F12/02—Monomers containing only one unsaturated aliphatic radical
- C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F12/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
- C08F12/22—Oxygen
- C08F12/24—Phenols or alcohols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1811—C10or C11-(Meth)acrylate, e.g. isodecyl (meth)acrylate, isobornyl (meth)acrylate or 2-naphthyl (meth)acrylate
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Emergency Medicine (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Abstract
Description
本発明は、バンプなどのメッキ造形物の製造に好適に用いることができるネガ型感放射線性樹脂組成物に関する。 The present invention relates to a negative-type radiation-sensitive resin composition that can be suitably used for the production of plated shaped objects such as bumps.
近年、携帯電話などの電子機器において、大規模集積回路(LSI)の高集積化および多層化が急激に進んでいる。このため、LSIを電子機器に搭載するための基板への多ピン実装方法が必要とされ、例えば、テープオートメーテッドボンディング(TAB)方式やフリップチップ方式によるベアチップ実装などが注目されている。前記方式においては、接続用端子であるバンプと呼ばれる突起電極をLSI上に高精度に配置することが必要とされている。 In recent years, in electronic devices such as cellular phones, large-scale integrated circuits (LSIs) have been rapidly integrated and multi-layered. For this reason, a multi-pin mounting method on a substrate for mounting an LSI on an electronic device is required. For example, a bare chip mounting by a tape automated bonding (TAB) method or a flip chip method has attracted attention. In the above-described system, it is necessary to dispose protruding electrodes called bumps, which are connection terminals, on the LSI with high accuracy.
上記バンプなどの各種精密部品は、例えば、感放射線性樹脂組成物を加工物表面に塗布して樹脂膜を形成し、フォトリソグラフィー法により該樹脂膜をパターニングし、このパターン化膜をマスクとして、電解メッキなどを実施することにより製造される(例えば、特許文献1および2参照)。 Various precision parts such as the bumps, for example, a resin film is formed by applying a radiation-sensitive resin composition to the surface of a workpiece, the resin film is patterned by a photolithography method, and the patterned film is used as a mask. It is manufactured by performing electrolytic plating or the like (see, for example, Patent Documents 1 and 2).
上記のようにフォトリソグラフィー法を用いてバンプなどの各種精密部品を得るには、様々な膜厚の樹脂膜を形成する技術が必要とされる。一般的に、上記感放射線性樹脂組成物を基板などの加工物表面に塗布する方法としては、スピンコート法が用いられている。 In order to obtain various precision parts such as bumps using the photolithography method as described above, a technique for forming resin films with various film thicknesses is required. In general, a spin coating method is used as a method of applying the radiation-sensitive resin composition to the surface of a workpiece such as a substrate.
スピンコート法により基板上に感放射線性樹脂組成物を塗布して所定の膜厚の樹脂膜を形成する場合には、基板の回転速度、基板の回転時間、感放射線性樹脂組成物の濃度などの条件を厳密に設定する必要がある。 When a radiation-sensitive resin composition is applied onto a substrate by spin coating to form a resin film having a predetermined thickness, the rotation speed of the substrate, the rotation time of the substrate, the concentration of the radiation-sensitive resin composition, etc. It is necessary to strictly set the conditions.
例えば、膜厚が大きく異なる樹脂膜が必要な場合には、感放射線性樹脂組成物の塗布前後に上記条件を設定し直さなければならない。スピンコート法においては、一般的に基板の回転速度の変更が容易であるため、これを変更することにより、様々な膜厚の樹脂膜を得ている。また、基板の回転時間を変更することによっても、スピンコート終了時の膜厚が異なる樹脂膜を得ることができる。 For example, when a resin film having a significantly different film thickness is required, the above conditions must be reset before and after application of the radiation-sensitive resin composition. In the spin coating method, since it is generally easy to change the rotation speed of the substrate, by changing this, resin films having various film thicknesses are obtained. Also, by changing the rotation time of the substrate, resin films having different film thicknesses at the end of spin coating can be obtained.
しかしながら、近年、歩留まり向上のため基板のサイズが大きくなってきているが、スピンコート法では、基板のサイズが大きくなると基板の回転速度の幅(レンジ)を大きくすることが困難であるという問題がある。このため、基板の回転速度を変更することにより、同一の感放射線性樹脂組成物を用いて膜厚が大きく異なる樹脂膜を得ることが難しくなってきている。 However, in recent years, the size of the substrate has been increased to improve the yield. However, in the spin coating method, it is difficult to increase the range (range) of the rotation speed of the substrate when the size of the substrate is increased. is there. For this reason, it has become difficult to obtain resin films having greatly different film thicknesses by using the same radiation-sensitive resin composition by changing the rotation speed of the substrate.
また、上記特許文献1および2に記載された感放射線性樹脂組成物を用いて、膜厚が異なる樹脂膜を形成した場合であっても、スピンコート終了後にこれらの樹脂膜を焼成すると、同程度の膜厚となってしまうという問題がある。 Further, even when resin films having different film thicknesses are formed using the radiation-sensitive resin compositions described in Patent Documents 1 and 2, if these resin films are baked after the spin coating is completed, There is a problem that the film thickness becomes about a degree.
このように、従来の感放射線性樹脂組成物では、スピンコート法により膜厚が大きく異なる樹脂膜を得ることは困難であった。 As described above, it has been difficult to obtain resin films having greatly different film thicknesses by the spin coating method with the conventional radiation-sensitive resin composition.
本発明の課題は、同一の樹脂組成物を用いても、スピンコート法の実施条件を変更することにより、膜厚が大きく異なる樹脂膜を形成することが可能なネガ型感放射線性樹脂組成物を提供することにある。 An object of the present invention is to provide a negative radiation-sensitive resin composition capable of forming resin films having greatly different film thicknesses by changing the execution conditions of the spin coating method even when the same resin composition is used. Is to provide.
本発明者らは上記課題を解決すべく鋭意研究した。その結果、ネガ型感放射線性樹脂組成物に特定の有機溶媒を配合することにより上記課題を解決できることを見出し、本発明を完成するに至った。すなわち、本発明は以下の[1]〜[6]に関する。 The present inventors have intensively studied to solve the above problems. As a result, it has been found that the above problem can be solved by blending a specific organic solvent into the negative radiation sensitive resin composition, and the present invention has been completed. That is, the present invention relates to the following [1] to [6].
[1](A)フェノール性水酸基を有するアルカリ可溶性樹脂、(B)エチレン性不飽和二重結合を有するラジカル重合性化合物、(C)感放射線性ラジカル重合開始剤、および(D)20℃,1気圧での飽和蒸気圧が3.0mmHg以下のエチレングリコール系有機溶媒を含む有機溶媒類を含有することを特徴とするネガ型感放射線性樹脂組成物。 [1] (A) an alkali-soluble resin having a phenolic hydroxyl group, (B) a radical polymerizable compound having an ethylenically unsaturated double bond, (C) a radiation-sensitive radical polymerization initiator, and (D) 20 ° C. A negative radiation-sensitive resin composition comprising an organic solvent containing an ethylene glycol-based organic solvent having a saturated vapor pressure at 1 atm of 3.0 mmHg or less.
[2]前記有機溶媒類(D)が、前記アルカリ可溶性樹脂(A)100重量部に対して、60〜300重量部の量で含まれることを特徴とする前記[1]に記載のネガ型感放射線性樹脂組成物。 [2] The negative type according to [1], wherein the organic solvent (D) is contained in an amount of 60 to 300 parts by weight with respect to 100 parts by weight of the alkali-soluble resin (A). Radiation sensitive resin composition.
[3]前記エチレングリコール系有機溶媒が、ジエチレングリコールジアルキルエーテル類およびジエチレングリコールモノアルキルエーテルアセテート類から選択される少なくとも1種であることを特徴とする前記[1]または[2]に記載のネガ型感放射線性樹脂組成物。 [3] The negative feeling according to [1] or [2], wherein the ethylene glycol organic solvent is at least one selected from diethylene glycol dialkyl ethers and diethylene glycol monoalkyl ether acetates. Radiation resin composition.
[4]前記エチレングリコール系有機溶媒の20℃,1気圧での飽和蒸気圧が、1.0mmHg以下であることを特徴とする前記[1]〜[3]の何れかに記載のネガ型感放射線性樹脂組成物。 [4] The negative feeling according to any one of the above [1] to [3], wherein the ethylene glycol organic solvent has a saturated vapor pressure at 20 ° C. and 1 atm of 1.0 mmHg or less. Radiation resin composition.
[5]前記フェノール性水酸基を有するアルカリ可溶性樹脂(A)が、下記式(1)で表される構造単位を有することを特徴とする前記[1]〜[4]の何れかに記載のネガ型感放射線性樹脂組成物。 [5] The negative according to any one of [1] to [4], wherein the alkali-soluble resin (A) having a phenolic hydroxyl group has a structural unit represented by the following formula (1): Type radiation sensitive resin composition.
[式(1)中、R1は水素原子またはメチル基を表す。]
[6]前記フェノール性水酸基を有するアルカリ可溶性樹脂(A)が、さらに下記式(2)で表される構造単位を有することを特徴とする前記[5]に記載のネガ型感放射線性樹脂組成物。[In the formula (1), R 1 represents a hydrogen atom or a methyl group. ]
[6] The negative radiation-sensitive resin composition according to [5], wherein the alkali-soluble resin (A) having a phenolic hydroxyl group further has a structural unit represented by the following formula (2): object.
[式(2)中、R2は水素原子またはメチル基を表す。R3は炭素数6〜12の、直鎖状炭化水素基、環状炭化水素基もしくは芳香族炭化水素基、またはこれらの基に含まれる少なくとも1つの水素原子が炭化水素基に置換された置換炭化水素基を表す。mは1〜10の整数であり、nは2〜4の整数である。][In the formula (2), R 2 represents a hydrogen atom or a methyl group. R 3 is a straight-chain hydrocarbon group, cyclic hydrocarbon group or aromatic hydrocarbon group having 6 to 12 carbon atoms, or a substituted hydrocarbon in which at least one hydrogen atom contained in these groups is substituted with a hydrocarbon group Represents a hydrogen group. m is an integer of 1 to 10, and n is an integer of 2 to 4. ]
本発明に係るネガ型感放射線性樹脂組成物を用いることにより、同一の樹脂組成物を用いても、スピンコート法の実施条件(例えば、基板の回転速度、基板の回転時間など)を変更することにより、膜厚が大きく異なる樹脂膜を形成することが可能となる。 By using the negative radiation sensitive resin composition according to the present invention, even if the same resin composition is used, the spin coating method implementation conditions (for example, the rotation speed of the substrate, the rotation time of the substrate, etc.) are changed. Thus, it becomes possible to form resin films having greatly different film thicknesses.
従って、上記ネガ型感放射線性樹脂組成物を用いて形成されたレジストパターンを鋳型として用いることにより、種々の高さを有するバンプや配線などのメッキ造形物を精度よく製造することができる。 Therefore, by using a resist pattern formed by using the negative radiation sensitive resin composition as a mold, it is possible to accurately produce plated objects such as bumps and wirings having various heights.
以下、本発明に係るネガ型感放射線性樹脂組成物、感放射線性樹脂膜の形成方法、メッキ造形物およびメッキ造形物の製造方法について詳細に説明する。なお、本発明において前記樹脂組成物を用いて形成される露光前の樹脂膜を「感放射線性樹脂膜」、該樹脂膜をパターニングして得られる層を「レジストパターン」ともいう。 Hereinafter, the negative radiation sensitive resin composition according to the present invention, the method for forming the radiation sensitive resin film, the plated model, and the method for manufacturing the plated model will be described in detail. In the present invention, the pre-exposure resin film formed using the resin composition is also referred to as “radiation sensitive resin film”, and the layer obtained by patterning the resin film is also referred to as “resist pattern”.
〔ネガ型感放射線性樹脂組成物〕
本発明に係るネガ型感放射線性樹脂組成物は、(A)フェノール性水酸基を有するアルカリ可溶性樹脂(以下「アルカリ可溶性樹脂(A)」ともいう)、(B)エチレン性不飽和二重結合を有するラジカル重合性化合物(以下「ラジカル重合性化合物(B)」ともいう)、(C)感放射線性ラジカル重合開始剤(以下「ラジカル重合開始剤(C)」ともいう)、および(D)20℃,1気圧での飽和蒸気圧が特定の範囲にあるエチレングリコール系有機溶媒を含む有機溶媒類(以下「有機溶媒類(D)」ともいう)を含有する。[Negative type radiation sensitive resin composition]
The negative radiation sensitive resin composition according to the present invention comprises (A) an alkali-soluble resin having a phenolic hydroxyl group (hereinafter also referred to as “alkali-soluble resin (A)”) and (B) an ethylenically unsaturated double bond. A radical polymerizable compound (hereinafter also referred to as “radical polymerizable compound (B)”), (C) a radiation-sensitive radical polymerization initiator (hereinafter also referred to as “radical polymerization initiator (C)”), and (D) 20 It contains organic solvents (hereinafter also referred to as “organic solvents (D)”) including an ethylene glycol organic solvent having a saturated vapor pressure at a temperature of 1 ° C. in a specific range.
<アルカリ可溶性樹脂(A)>
アルカリ可溶性樹脂(A)は、フェノール性水酸基を有する。なお、本発明において「アルカリ可溶性」とは、目的とする現像処理が可能な程度に、アルカリ性の現像液に溶解する性質をいう。<Alkali-soluble resin (A)>
The alkali-soluble resin (A) has a phenolic hydroxyl group. In the present invention, “alkali-soluble” refers to a property of being dissolved in an alkaline developer to such an extent that the desired development processing can be performed.
アルカリ可溶性樹脂(A)は、下記式(1)で表される構造単位(以下「構造単位(1)」ともいう)を有することが好ましく、さらに構造単位(1)とともに下記式(2)で表される構造単位(以下「構造単位(2)」ともいう)を有することがより好ましい。 The alkali-soluble resin (A) preferably has a structural unit represented by the following formula (1) (hereinafter also referred to as “structural unit (1)”), and is further represented by the following formula (2) together with the structural unit (1). It is more preferable to have a structural unit represented (hereinafter also referred to as “structural unit (2)”).
式(1)中、R1は水素原子またはメチル基を表す。In formula (1), R 1 represents a hydrogen atom or a methyl group.
式(2)中、R2は水素原子またはメチル基を表す。R3は炭素数6〜12の、直鎖状炭化水素基、環状炭化水素基もしくは芳香族炭化水素基、またはこれらの基に含まれる少なくとも1つの水素原子が、メチル基、エチル基などの炭化水素基に置換された置換炭化水素基を表す。mは1〜10の整数であり、nは2〜4の整数である。In formula (2), R 2 represents a hydrogen atom or a methyl group. R 3 is a straight-chain hydrocarbon group, cyclic hydrocarbon group or aromatic hydrocarbon group having 6 to 12 carbon atoms, or at least one hydrogen atom contained in these groups is a carbon group such as a methyl group or an ethyl group. The substituted hydrocarbon group substituted by the hydrogen group is represented. m is an integer of 1 to 10, and n is an integer of 2 to 4.
上記炭素数6〜12の直鎖状炭化水素基としては、例えば、ヘキシル基、ヘプチル基、オクチル基、ノニル基などが挙げられる。 As said C6-C12 linear hydrocarbon group, a hexyl group, a heptyl group, an octyl group, a nonyl group etc. are mentioned, for example.
上記炭素数6〜12の環状炭化水素基としては、例えば、シクロヘキシル基、シクロヘプチル基、シクロオクチル基などのシクロアルキル基;アダマンタン、ビシクロ[2.2.1]ヘプタン、テトラシクロ[6.2.1.13,6.02,7]ドデカン、トリシクロ[5.2.1.02,6]デカンなどの有橋式炭化水素類に由来する基などが挙げられる。Examples of the cyclic hydrocarbon group having 6 to 12 carbon atoms include cycloalkyl groups such as a cyclohexyl group, a cycloheptyl group, and a cyclooctyl group; adamantane, bicyclo [2.2.1] heptane, and tetracyclo [6.2. 1.1 3,6 . And groups derived from bridged hydrocarbons such as 0 2,7 ] dodecane and tricyclo [5.2.1.0 2,6 ] decane.
上記炭素数6〜12の芳香族炭化水素基としては、例えば、フェニル基、o−トリル基、m−トリル基、p−トリル基、4−t−ブチルフェニル基、1−ナフチル基、ベンジル基などが挙げられる。 Examples of the aromatic hydrocarbon group having 6 to 12 carbon atoms include phenyl group, o-tolyl group, m-tolyl group, p-tolyl group, 4-t-butylphenyl group, 1-naphthyl group, and benzyl group. Etc.
構造単位(1)を有するアルカリ可溶性樹脂(A)を用いることで、メッキ工程におけるレジストパターンの膨潤を抑えることができる。その結果、基板からのレジストパターンの浮きや剥れが発生しないため、メッキ工程を長時間実施した場合であってもメッキ液が基板とレジストパターンとの界面にしみ出すことを防ぐ効果がある。また、解像性を良好にする効果がある。 By using the alkali-soluble resin (A) having the structural unit (1), swelling of the resist pattern in the plating step can be suppressed. As a result, since the resist pattern does not float or peel off from the substrate, there is an effect of preventing the plating solution from seeping out to the interface between the substrate and the resist pattern even when the plating process is performed for a long time. In addition, there is an effect of improving the resolution.
構造単位(2)を有するアルカリ可溶性樹脂(A)を用いることで、基板に対するレジストパターンの密着性が高くなるため、メッキ工程を長時間実施した場合であってもメッキ液が基板とレジストパターンとの界面にしみ出すことを防ぐ効果がある。 By using the alkali-soluble resin (A) having the structural unit (2), the adhesion of the resist pattern to the substrate is increased. Therefore, even when the plating process is performed for a long time, the plating solution is formed between the substrate and the resist pattern. There is an effect to prevent the oozing out to the interface.
アルカリ可溶性樹脂(A)中の構造単位(1)の含有量は、通常は1〜30重量%、好ましくは10〜20重量%の範囲にある。構造単位(1)の含有量が前記範囲にある、すなわち構造単位(1)を導く単量体をこのような量で用いることにより、アルカリ可溶性樹脂(A)の分子量を充分に上げることができる。また、メッキ工程におけるレジストパターンの膨潤を抑えることができる。 The content of the structural unit (1) in the alkali-soluble resin (A) is usually in the range of 1 to 30% by weight, preferably 10 to 20% by weight. The molecular weight of the alkali-soluble resin (A) can be sufficiently increased by using the monomer in which the content of the structural unit (1) is in the above range, that is, the monomer that leads to the structural unit (1) is used in such an amount. . Moreover, swelling of the resist pattern in the plating process can be suppressed.
アルカリ可溶性樹脂(A)中の構造単位(2)の含有量は、通常は1〜40重量%、好ましくは10〜30重量%の範囲にある。構造単位(2)の含有量が前記範囲にある、すなわち構造単位(2)を導く単量体をこのような量で用いることにより、アルカリ可溶性樹脂(A)の分子量を充分に上げることができる。また、メッキ工程におけるレジストパターンの膨潤を抑えることができる。 The content of the structural unit (2) in the alkali-soluble resin (A) is usually in the range of 1 to 40% by weight, preferably 10 to 30% by weight. The molecular weight of the alkali-soluble resin (A) can be sufficiently increased by using the monomer in which the content of the structural unit (2) is in the above range, that is, the monomer that leads to the structural unit (2) is used in such an amount. . Moreover, swelling of the resist pattern in the plating process can be suppressed.
アルカリ可溶性樹脂(A)の重量平均分子量(Mw)は、ゲルパーミエーションクロマト法により測定され、ポリスチレン換算で通常は1000〜100000、好ましくは2000〜50000、より好ましくは3000〜20000の範囲にある。 The weight average molecular weight (Mw) of the alkali-soluble resin (A) is measured by gel permeation chromatography, and is usually 1000 to 100,000, preferably 2000 to 50000, more preferably 3000 to 20000 in terms of polystyrene.
≪単量体(1’)≫
構造単位(1)を有するアルカリ可溶性樹脂(A)は、例えば、o−ヒドロキシスチレン、m−ヒドロキシスチレン、p−ヒドロキシスチレン、p−イソプロペニルフェノールなどの水酸基含有芳香族ビニル化合物(以下「単量体(1’)」ともいう)を原料モノマーの一部に用いて重合することにより得ることができる。これらの単量体(1’)は1種単独で用いてもよく、2種以上を併用してもよい。≪Monomer (1 ') ≫
The alkali-soluble resin (A) having the structural unit (1) is, for example, a hydroxyl group-containing aromatic vinyl compound such as o-hydroxystyrene, m-hydroxystyrene, p-hydroxystyrene, p-isopropenylphenol (hereinafter referred to as “single amount”). (Also referred to as "body (1 ')") as a part of the raw material monomer. These monomers (1 ′) may be used alone or in combination of two or more.
これら単量体(1’)の中でも、長時間のメッキ処理耐性に優れたレジストパターンを形成可能なネガ型感放射線性樹脂組成物が得られる点で、p−ヒドロキシスチレン、p−イソプロペニルフェノールが好ましく、p−イソプロペニルフェノールがより好ましい。 Among these monomers (1 ′), p-hydroxystyrene and p-isopropenylphenol are obtained in that a negative-type radiation-sensitive resin composition capable of forming a resist pattern excellent in long-term plating treatment resistance can be obtained. Is preferred, and p-isopropenylphenol is more preferred.
≪単量体(2’)≫
構造単位(2)を有するアルカリ可溶性樹脂(A)は、例えば、下記式(2’)で表される単量体(以下「単量体(2’)」ともいう)を原料モノマーの一部に用いて重合することにより得ることができる。≪Monomer (2 ′) ≫
The alkali-soluble resin (A) having the structural unit (2) is, for example, a monomer represented by the following formula (2 ′) (hereinafter also referred to as “monomer (2 ′)”) as a part of the raw material monomer It can obtain by polymerizing using.
式(2’)中、R2、R3、mおよびnは、それぞれ上記式(2)におけるR2、R3、mおよびnと同義である。Wherein (2 '), R 2, R 3, m and n have the same meanings as R 2, R 3, m and n in each of the above formula (2).
上記単量体(2’)としては、例えば、フェノキシジエチレングリコール(メタ)アクリレート、フェノキシトリエチレングリコール(メタ)アクリレート、フェノキシテトラエチレングリコール(メタ)アクリレート、フェノキシポリエチレングリコール(メタ)アクリレート、フェノキシジプロピレングリコール(メタ)アクリレート、フェノキシトリプロピレングリコール(メタ)アクリレート、フェノキシテトラプロピレングリコール(メタ)アクリレート、ラウロキシジエチレングリコール(メタ)アクリレート、ラウロキシトリエチレングリコール(メタ)アクリレート、ラウロキシテトラエチレングリコール(メタ)アクリレート、ラウロキシジプロピレングリコール(メタ)アクリレート、ラウロキシトリプロピレングリコール(メタ)アクリレート、ラウロキシテトラプロピレングリコール(メタ)アクリレートなどが挙げられる。これらの単量体(2’)は1種単独で用いてもよく、2種以上を併用してもよい。 Examples of the monomer (2 ′) include phenoxydiethylene glycol (meth) acrylate, phenoxytriethylene glycol (meth) acrylate, phenoxytetraethylene glycol (meth) acrylate, phenoxypolyethylene glycol (meth) acrylate, and phenoxydipropylene glycol. (Meth) acrylate, phenoxytripropylene glycol (meth) acrylate, phenoxytetrapropylene glycol (meth) acrylate, lauroxydiethylene glycol (meth) acrylate, lauroxytriethylene glycol (meth) acrylate, lauroxytetraethylene glycol (meth) acrylate, Lauroxydipropylene glycol (meth) acrylate, Lauroxytripropyleneglycol Le (meth) acrylate, etc. lauroxy tetrapropylene glycol (meth) acrylate. These monomers (2 ') may be used alone or in combination of two or more.
これら単量体(2’)の中でも、基板との密着性、耐熱性、長時間のメッキ処理耐性に優れたレジストパターンを形成可能なネガ型感放射線性樹脂組成物が得られる点で、フェノキシジエチレングリコール(メタ)アクリレート、フェノキシトリエチレングリコール(メタ)アクリレート、フェノキシテトラエチレングリコール(メタ)アクリレート、フェノキシポリエチレングリコール(メタ)アクリレート、フェノキシジプロピレングリコール(メタ)アクリレート、フェノキシトリプロピレングリコール(メタ)アクリレート、フェノキシテトラプロピレングリコール(メタ)アクリレートが好ましく、フェノキシジエチレングリコールアクリレート、フェノキシトリエチレングリコールアクリレート、フェノキシテトラエチレングリコールアクリレート、フェノキシポリエチレングリコールアクリレートがより好ましい。 Among these monomers (2 ′), phenoxy is obtained in that a negative radiation sensitive resin composition capable of forming a resist pattern having excellent adhesion to a substrate, heat resistance, and long-term plating treatment resistance can be obtained. Diethylene glycol (meth) acrylate, phenoxytriethylene glycol (meth) acrylate, phenoxytetraethylene glycol (meth) acrylate, phenoxypolyethylene glycol (meth) acrylate, phenoxydipropylene glycol (meth) acrylate, phenoxytripropylene glycol (meth) acrylate, Phenoxytetrapropylene glycol (meth) acrylate is preferred, phenoxydiethylene glycol acrylate, phenoxytriethylene glycol acrylate, phenoxytetraethylene glycol Lumpur acrylate, phenoxy polyethylene glycol acrylate are more preferred.
≪単量体(I)≫
アルカリ可溶性樹脂(A)は、さらに、単量体(1’)または(2’)と共重合可能なその他の単量体(以下「単量体(I)」ともいう)から誘導される構造単位を有してもよい。≪Monomer (I) ≫
The alkali-soluble resin (A) further has a structure derived from another monomer copolymerizable with the monomer (1 ′) or (2 ′) (hereinafter also referred to as “monomer (I)”). You may have a unit.
上記単量体(I)としては、例えば、スチレン、α−メチルスチレン、p−メチルスチレン、p−メトキシスチレンなどの芳香族ビニル化合物;
N−ビニルピロリドン、N−ビニルカプロラクタムなどのヘテロ原子含有脂環式ビニル化合物;
アクリロニトリル、メタクリロニトリルなどのシアノ基含有ビニル化合物;
1,3−ブタジエン、イソプレンなどの共役ジオレフィン類;
アクリル酸、メタクリル酸などのカルボキシル基含有ビニル化合物;
メチル(メタ)アクリレート、エチル(メタ)アクリレート、n−プロピル(メタ)アクリレート、n−ブチル(メタ)アクリレート、2−ヒドロキシエチル(メタ)アクリレート、2−ヒドロキシプロピル(メタ)アクリレート、ポリエチレングリコールモノ(メタ)アクリレート、ポリプロピレングリコールモノ(メタ)アクリレート、グリセロールモノ(メタ)アクリレート、フェニル(メタ)アクリレート、ベンジル(メタ)アクリレート、シクロヘキシル(メタ)アクリレート、イソボルニル(メタ)アクリレート、トリシクロデカニル(メタ)アクリレートなどの(メタ)アクリル酸エステル類;
p−ヒドロキシフェニル(メタ)アクリルアミドなどが挙げられる。これらの単量体(I)は1種単独で用いてもよく、2種以上を併用してもよい。Examples of the monomer (I) include aromatic vinyl compounds such as styrene, α-methylstyrene, p-methylstyrene, and p-methoxystyrene;
Heteroatom-containing alicyclic vinyl compounds such as N-vinylpyrrolidone and N-vinylcaprolactam;
Cyano group-containing vinyl compounds such as acrylonitrile and methacrylonitrile;
Conjugated diolefins such as 1,3-butadiene and isoprene;
Carboxyl group-containing vinyl compounds such as acrylic acid and methacrylic acid;
Methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, n-butyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, polyethylene glycol mono ( (Meth) acrylate, polypropylene glycol mono (meth) acrylate, glycerol mono (meth) acrylate, phenyl (meth) acrylate, benzyl (meth) acrylate, cyclohexyl (meth) acrylate, isobornyl (meth) acrylate, tricyclodecanyl (meth) (Meth) acrylic acid esters such as acrylate;
p-hydroxyphenyl (meth) acrylamide etc. are mentioned. These monomers (I) may be used individually by 1 type, and may use 2 or more types together.
これら単量体(I)の中では、スチレン、アクリル酸、メタクリル酸、メチル(メタ)アクリレート、エチル(メタ)アクリレート、n−ブチル(メタ)アクリレート、トリシクロデカニル(メタ)アクリレート、ベンジル(メタ)アクリレート、イソボルニル(メタ)アクリレート、p−ヒドロキシフェニル(メタ)アクリルアミドなどが好ましい。 Among these monomers (I), styrene, acrylic acid, methacrylic acid, methyl (meth) acrylate, ethyl (meth) acrylate, n-butyl (meth) acrylate, tricyclodecanyl (meth) acrylate, benzyl ( Preferred are meth) acrylate, isobornyl (meth) acrylate, p-hydroxyphenyl (meth) acrylamide and the like.
アルカリ可溶性樹脂(A)は、例えば、ラジカル重合によって製造することができる。また、重合方法としては、例えば、乳化重合法、懸濁重合法、溶液重合法、塊状重合法などが挙げられるが、特に重合溶媒を用いた溶液重合法が好ましい。 The alkali-soluble resin (A) can be produced, for example, by radical polymerization. Examples of the polymerization method include an emulsion polymerization method, a suspension polymerization method, a solution polymerization method, a bulk polymerization method, and the like, and a solution polymerization method using a polymerization solvent is particularly preferable.
≪重合開始剤≫
アルカリ可溶性樹脂(A)を製造する際に用いられる重合開始剤としては、通常のラジカル重合開始剤が挙げられ、例えば、2,2'−アゾビスイソブチロニトリル、2,2’−アゾビス−(2,4−ジメチルバレロニトリル)、2,2’−アゾビス−(4−メトキシ−2,4−ジメチルバレロニトリル)、2,2’−アゾビス−(2−メチルブチロニトリル)、1,1’−アゾビス−(シクロヘキサン−1−カルボニトリル)、ジメチル−2,2’−アゾビス(2−メチルプロピオネート)などのアゾ化合物;ベンゾイルペルオキシド、ラウロイルペルオキシド、tert−ブチルペルオキシピバレート、1,1’−ビス−(tert−ブチルペルオキシ)シクロヘキサンなどの有機過酸化物;過酸化水素などが挙げられる。≪Polymerization initiator≫
Examples of the polymerization initiator used for producing the alkali-soluble resin (A) include ordinary radical polymerization initiators such as 2,2′-azobisisobutyronitrile and 2,2′-azobis- (2,4-dimethylvaleronitrile), 2,2'-azobis- (4-methoxy-2,4-dimethylvaleronitrile), 2,2'-azobis- (2-methylbutyronitrile), 1,1 Azo compounds such as' -azobis- (cyclohexane-1-carbonitrile), dimethyl-2,2'-azobis (2-methylpropionate); benzoyl peroxide, lauroyl peroxide, tert-butylperoxypivalate, 1,1 Organic peroxides such as' -bis- (tert-butylperoxy) cyclohexane; hydrogen peroxide and the like.
また、上記有機過酸化物をラジカル重合開始剤として用いる場合には、水酸化鉄(II)、亜硫酸ナトリウムなどの無機還元剤、アルコール、ポリアミンなどの有機還元剤を組み合わせてレドックス型の開始剤としてもよい。 Moreover, when using the said organic peroxide as a radical polymerization initiator, it combines as an inorganic reducing agent, such as iron hydroxide (II) and sodium sulfite, and organic reducing agents, such as alcohol and a polyamine, as a redox type initiator. Also good.
≪重合溶媒≫
溶液重合法を用いてアルカリ可溶性樹脂(A)を製造する場合に用いられる重合溶媒としては、上記単量体成分と反応せず、該樹脂(A)が溶解する溶媒であれば特に限定されるものでない。≪Polymerization solvent≫
The polymerization solvent used when the alkali-soluble resin (A) is produced using the solution polymerization method is not particularly limited as long as it is a solvent that does not react with the monomer component and dissolves the resin (A). Not a thing.
上記重合溶媒としては、例えば、メタノール、エタノール、エチレングリコール、ジエチレングリコール、プロピレングリコールなどのアルコール類;
テトラヒドロフラン、ジオキサンなどの環状エーテル類;
エチレングリコールモノメチルエーテル、エチレングリコールモノエチルエーテル、エチレングリコールジメチルエーテル、エチレングリコールジエチルエーテル、ジエチレングリコールモノメチルエーテル、ジエチレングリコールモノエチルエーテル、ジエチレングリコールジメチルエーテル、ジエチレングリコールジエチルエーテル、ジエチレングリコールエチルメチルエーテル、プロピレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテルなどの多価アルコールのアルキルエーテル類;
エチレングリコールモノエチルエーテルアセテート、ジエチレングリコールモノエチルエーテルアセテート、プロピレングリコールモノメチルエーテルアセテート、プロピレングリコールモノエチルエーテルアセテートなどの多価アルコールのアルキルエーテルアセテート類;
トルエン、キシレンなどの芳香族炭化水素類;
アセトン、メチルエチルケトン、メチルイソブチルケトン、シクロヘキサノン、4−ヒドロキシ−4−メチル−2−ペンタノンなどのケトン類;
酢酸エチル、酢酸ブチル、エトキシ酢酸エチル、ヒドロキシ酢酸エチル、2−ヒドロキシプロピオン酸エチル、2−ヒドロキシ−2−メチルプロピオン酸エチル、2−ヒドロキシ−3−メチルブタン酸メチル、3−メトキシプロピオン酸メチル、3−メトキシプロピオン酸エチル、3−エトキシプロピオン酸メチル、3−エトキシプロピオン酸エチル、乳酸エチルなどのエステル類が挙げられる。Examples of the polymerization solvent include alcohols such as methanol, ethanol, ethylene glycol, diethylene glycol, and propylene glycol;
Cyclic ethers such as tetrahydrofuran and dioxane;
Ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol ethyl methyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl Alkyl ethers of polyhydric alcohols such as ethers;
Alkyl ether acetates of polyhydric alcohols such as ethylene glycol monoethyl ether acetate, diethylene glycol monoethyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate;
Aromatic hydrocarbons such as toluene and xylene;
Ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone;
Ethyl acetate, butyl acetate, ethyl ethoxyacetate, ethyl hydroxyacetate, ethyl 2-hydroxypropionate, ethyl 2-hydroxy-2-methylpropionate, methyl 2-hydroxy-3-methylbutanoate, methyl 3-methoxypropionate, 3 -Esters such as ethyl methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate and ethyl lactate.
これら重合溶媒の中では、環状エーテル類、多価アルコールのアルキルエーテル類、多価アルコールのアルキルエーテルアセテート類、ケトン類、エステル類などが好ましい。 Among these polymerization solvents, cyclic ethers, polyhydric alcohol alkyl ethers, polyhydric alcohol alkyl ether acetates, ketones, esters and the like are preferable.
<ラジカル重合性化合物(B)>
本発明に用いられるラジカル重合性化合物(B)は、分子中にエチレン性不飽和二重結合を少なくとも1つ有し、好ましくは常温で液体または固体の化合物である。<Radically polymerizable compound (B)>
The radically polymerizable compound (B) used in the present invention has at least one ethylenically unsaturated double bond in the molecule, and is preferably a liquid or solid compound at room temperature.
ラジカル重合性化合物(B)としては、(メタ)アクリロイル基を有する(メタ)アクリレート化合物、ビニル基を有する化合物が好ましく用いられる。前記(メタ)アクリレート化合物は、単官能性(メタ)アクリレート化合物と多官能性(メタ)アクリレート化合物とに分類されるが、何れの化合物も用いることができる。 As the radical polymerizable compound (B), a (meth) acrylate compound having a (meth) acryloyl group and a compound having a vinyl group are preferably used. The (meth) acrylate compound is classified into a monofunctional (meth) acrylate compound and a polyfunctional (meth) acrylate compound, and any compound can be used.
上記単官能性(メタ)アクリレート化合物としては、例えば、2−ヒドロキシエチル(メタ)アクリレート、2−ヒドロキシプロピル(メタ)アクリレート、2−ヒドロキシブチル(メタ)アクリレート、
メチル(メタ)アクリレート、エチル(メタ)アクリレート、プロピル(メタ)アクリレート、イソプロピル(メタ)アクリレート、ブチル(メタ)アクリレート、イソブチル(メタ)アクリレート、tert−ブチル(メタ)アクリレート、ペンチル(メタ)アクリレート、イソアミル(メタ)アクリレート、ヘキシル(メタ)アクリレート、ヘプチル(メタ)アクリレート、オクチル(メタ)アクリレート、イソオクチル(メタ)アクリレート、2−エチルヘキシル(メタ)アクリレート、ノニル(メタ)アクリレート、デシル(メタ)アクリレート、イソデシル(メタ)アクリレート、ウンデシル(メタ)アクリレート、ドデシルアミル(メタ)アクリレート、ラウリル(メタ)アクリレート、オクタデシル(メタ)アクリレート、ステアリル(メタ)アクリレート、
テトラヒドロフルフリル(メタ)アクリレート、ベンジル(メタ)アクリレート、フェノキシエチル(メタ)アクリレート、エトキシエチル(メタ)アクリレート、ブトキシエチル(メタ)アクリレート、グリセロール(メタ)アクリレート、
エチレングリコールモノメチルエーテル(メタ)アクリレート、エチレングリコールモノエチルエーテル(メタ)アクリレート、ポリエチレングリコールモノ(メタ)アクリレート、ポリプロピレングリコールモノ(メタ)アクリレート、メトキシエチレングリコール(メタ)アクリレート、エトキシジエチレングリコール(メタ)アクリレート、メトキシポリエチレングリコール(メタ)アクリレート、メトキシポリプロピレングリコール(メタ)アクリレート、フェノキシポリエチレングリコール(メタ)アクリレート、フェノキシポリプロピレングリコール(メタ)アクリレート、
トリシクロ〔5.2.1.02,6〕デカジエニル(メタ)アクリレート、トリシクロ〔5.2.1.02,6〕デカニル(メタ)アクリレート、トリシクロ〔5.2.1.02,6〕デセニル(メタ)アクリレート、イソボルニル(メタ)アクリレート、ボルニル(メタ)アクリレート、シクロヘキシル(メタ)アクリレート、
アクリル酸アミド、メタクリル酸アミド、ジアセトン(メタ)アクリルアミド、イソブトキシメチル(メタ)アクリルアミド、N,N−ジメチル(メタ)アクリルアミド、tert−オクチル(メタ)アクリルアミド、ジメチルアミノエチル(メタ)アクリレート、ジエチルアミノエチル(メタ)アクリレート、7−アミノ−3,7−ジメチルオクチル(メタ)アクリレートなどが挙げられる。Examples of the monofunctional (meth) acrylate compound include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate,
Methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, isopropyl (meth) acrylate, butyl (meth) acrylate, isobutyl (meth) acrylate, tert-butyl (meth) acrylate, pentyl (meth) acrylate, Isoamyl (meth) acrylate, hexyl (meth) acrylate, heptyl (meth) acrylate, octyl (meth) acrylate, isooctyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, nonyl (meth) acrylate, decyl (meth) acrylate, Isodecyl (meth) acrylate, undecyl (meth) acrylate, dodecyl amyl (meth) acrylate, lauryl (meth) acrylate, octadecyl (meth) acrylate, Allyl (meth) acrylate,
Tetrahydrofurfuryl (meth) acrylate, benzyl (meth) acrylate, phenoxyethyl (meth) acrylate, ethoxyethyl (meth) acrylate, butoxyethyl (meth) acrylate, glycerol (meth) acrylate,
Ethylene glycol monomethyl ether (meth) acrylate, ethylene glycol monoethyl ether (meth) acrylate, polyethylene glycol mono (meth) acrylate, polypropylene glycol mono (meth) acrylate, methoxyethylene glycol (meth) acrylate, ethoxydiethylene glycol (meth) acrylate, Methoxypolyethylene glycol (meth) acrylate, methoxypolypropylene glycol (meth) acrylate, phenoxypolyethylene glycol (meth) acrylate, phenoxypolypropylene glycol (meth) acrylate,
Tricyclo [5.2.1.0 2,6 ] decadienyl (meth) acrylate, tricyclo [5.2.1.0 2,6 ] decanyl (meth) acrylate, tricyclo [5.2.1.0 2,6 Decenyl (meth) acrylate, isobornyl (meth) acrylate, bornyl (meth) acrylate, cyclohexyl (meth) acrylate,
Acrylic amide, methacrylic amide, diacetone (meth) acrylamide, isobutoxymethyl (meth) acrylamide, N, N-dimethyl (meth) acrylamide, tert-octyl (meth) acrylamide, dimethylaminoethyl (meth) acrylate, diethylaminoethyl (Meth) acrylate, 7-amino-3,7-dimethyloctyl (meth) acrylate, etc. are mentioned.
上記多官能性(メタ)アクリレート化合物としては、例えば、トリメチロールプロパンジ(メタ)アクリレート、トリメチロールプロパントリ(メタ)アクリレート、トリメチロールプロパンPO(propylene oxide)変性トリ(メタ)アクリレート、テトラメチロールプロパンテトラ(メタ)アクリレート、エチレングリコールジ(メタ)アクリレート、テトラエチレングリコールジ(メタ)アクリレート、ポリエチレングリコールジ(メタ)アクリレート、1,4−ブタンジオールジ(メタ)アクリレート、1,6−ヘキサンジオールジ(メタ)アクリレート、プロピレングリコールジ(メタ)アクリレート、ブチレングリコールジ(メタ)アクリレート、ネオペンチルグリコールジ(メタ)アクリレート、トリス(2−ヒドロキシエチル)イソシアヌレートジ(メタ)アクリレート、トリス(2−ヒドロキシエチル)イソシアヌレートトリ(メタ)アクリレート、トリシクロデカンジメタノールジ(メタ)アクリレート、ビスフェノールAのジグリシジルエーテルに(メタ)アクリル酸を付加させたエポキシ(メタ)アクリレート、ビスフェノールAジ(メタ)アクリロイルオキシエチルエーテル、ビスフェノールAジ(メタ)アクリロイルオキシメチルエチルエーテル、ビスフェノールAジ(メタ)アクリロイルオキシエチルオキシエチルエーテル、ペンタエリスリトールトリ(メタ)アクリレート、ペンタエリスリトールテトラ(メタ)アクリレート、ジペンタエリスリトールペンタ(メタ)アクリレート、ジペンタエリスリトールヘキサ(メタ)アクリレート、ポリエステル(メタ)アクリレート(三官能以上)などが挙げられる。 Examples of the polyfunctional (meth) acrylate compound include trimethylolpropane di (meth) acrylate, trimethylolpropane tri (meth) acrylate, trimethylolpropane PO (propylene oxide) modified tri (meth) acrylate, and tetramethylolpropane. Tetra (meth) acrylate, ethylene glycol di (meth) acrylate, tetraethylene glycol di (meth) acrylate, polyethylene glycol di (meth) acrylate, 1,4-butanediol di (meth) acrylate, 1,6-hexanediol di (Meth) acrylate, propylene glycol di (meth) acrylate, butylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, tris (2-hydroxyethyl) i Epoxy with cyanurate di (meth) acrylate, tris (2-hydroxyethyl) isocyanurate tri (meth) acrylate, tricyclodecane dimethanol di (meth) acrylate, bisphenol A diglycidyl ether added with (meth) acrylic acid ( Meth) acrylate, bisphenol A di (meth) acryloyloxyethyl ether, bisphenol A di (meth) acryloyloxymethyl ethyl ether, bisphenol A di (meth) acryloyloxyethyloxyethyl ether, pentaerythritol tri (meth) acrylate, pentaerythritol Tetra (meth) acrylate, dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, polyester Meth) acrylate (trifunctional or higher), and the like.
また、ラジカル重合性化合物(B)としては、市販されている化合物をそのまま用いることもできる。市販されている化合物としては、例えば、アロニックスM−210、同M−309、同M−310、同M−320、同M−400、同M−7100、同M−8030、同M−8060、同M−8100、同M−9050、同M−240、同M−245、同M−6100、同M−6200、同M−6250、同M−6300、同M−6400、同M−6500(以上、東亞合成(株)製)、KAYARAD R−551、同R−712、同TMPTA、同HDDA、同TPGDA、同PEG400DA、同MANDA、同HX−220、同HX−620、同R−604、同DPCA−20、DPCA−30、同DPCA−60、同DPCA−120(以上、日本化薬(株)製)、ビスコート#295、同300、同260、同312、同335HP、同360、同GPT、同3PA、同400(以上、大阪有機化学工業(株)製)などが挙げられる。 Moreover, as a radically polymerizable compound (B), the commercially available compound can also be used as it is. Examples of commercially available compounds include Aronix M-210, M-309, M-310, M-320, M-400, M-7100, M-8030, M-8060, Same M-8100, Same M-9050, Same M-240, Same M-245, Same M-6100, Same M-6200, Same M-6250, Same M-6300, Same M-6400, Same M-6500 ( As described above, manufactured by Toagosei Co., Ltd.), KAYARAD R-551, R-712, TMPTA, HDDA, TPGDA, PEG400DA, MANDA, HX-220, HX-620, R-604, DPCA-20, DPCA-30, DPCA-60, DPCA-120 (manufactured by Nippon Kayaku Co., Ltd.), Biscote # 295, 300, 260, 312 and 335 P, the 360, the same GPT, the same 3PA, the 400 (manufactured by Osaka Organic Chemical Industry Co., Ltd.), and the like.
これらのラジカル重合性化合物(B)は1種単独で用いてもよく、2種以上を併用してもよい。 These radically polymerizable compounds (B) may be used individually by 1 type, and may use 2 or more types together.
ラジカル重合性化合物(B)の使用量は、アルカリ可溶性樹脂(A)100重量部に対して、通常は30〜80重量部、好ましくは40〜70重量部である。ラジカル重合性化合物(B)の使用量が前記範囲にあると、該化合物(B)とアルカリ可溶性樹脂(A)との相溶性が優れ、本発明に係るネガ型感放射線性樹脂組成物からなる塗布液の保存安定性が向上する。また、感放射線性樹脂膜の露光感度が良好となる。 The usage-amount of a radically polymerizable compound (B) is 30-80 weight part normally with respect to 100 weight part of alkali-soluble resin (A), Preferably it is 40-70 weight part. When the amount of the radical polymerizable compound (B) used is within the above range, the compatibility between the compound (B) and the alkali-soluble resin (A) is excellent, and the negative radiation sensitive resin composition according to the present invention is used. The storage stability of the coating solution is improved. In addition, the exposure sensitivity of the radiation sensitive resin film is improved.
<ラジカル重合開始剤(C)>
本発明に用いられるラジカル重合開始剤(C)とは、放射線の照射によりラジカルを発生し、ラジカル重合性化合物(B)のラジカル重合を開始させる化合物である。<Radical polymerization initiator (C)>
The radical polymerization initiator (C) used in the present invention is a compound that generates radicals upon irradiation with radiation and initiates radical polymerization of the radical polymerizable compound (B).
ここで、上記放射線とは、紫外線、可視光線、遠紫外線、X線、電子線などを意味する。通常、感放射線性樹脂の硬化用の放射線源としては水銀ランプが使用される。感放射線性樹脂の硬化に際しては、水銀ランプの発光スペクトルのうち、波長365nmのi線および波長405nmのh線を利用することが一般的である。 Here, the radiation means ultraviolet rays, visible rays, far ultraviolet rays, X-rays, electron beams, and the like. Usually, a mercury lamp is used as a radiation source for curing the radiation sensitive resin. When curing the radiation sensitive resin, it is common to use i-line having a wavelength of 365 nm and h-line having a wavelength of 405 nm in the emission spectrum of the mercury lamp.
このうち、i線はh線よりもエネルギーが高いため、感放射線性樹脂の硬化性が高く、酸素による硬化阻害を受けにくいが、短波長であるためラジカル重合開始剤に吸収されやすい。このため、厚膜の感放射線性樹脂膜の硬化にi線を用いた場合には、感放射線性樹脂膜の底層部まで充分なエネルギーが到達できないので、該樹脂膜に所望のパターンの潜像が形成されない場合がある。例えば、パターニング後のレジストパターンの断面形状が矩形でなくなったり、レジストパターンの表層部よりも底層部が抉れた台形となることがある。 Among these, since the i-line has higher energy than the h-line, the radiation-sensitive resin has high curability and is less susceptible to curing inhibition by oxygen, but is easily absorbed by the radical polymerization initiator because of its short wavelength. For this reason, when i-line is used to cure the thick radiation-sensitive resin film, sufficient energy cannot reach the bottom layer of the radiation-sensitive resin film, so that a latent image of a desired pattern is formed on the resin film. May not be formed. For example, the cross-sectional shape of the resist pattern after patterning may not be rectangular or may be a trapezoid in which the bottom layer portion is narrower than the surface layer portion of the resist pattern.
一方、h線はi線よりもエネルギーが低いため、感放射線性樹脂の硬化性が低く、感放射線性樹脂膜の表層部において酸素による硬化阻害を受けやすいので、パターニング後の残膜率が著しく低下する場合がある。 On the other hand, since the h-line has lower energy than the i-line, the curability of the radiation-sensitive resin is low, and the surface layer portion of the radiation-sensitive resin film is susceptible to curing inhibition by oxygen. May decrease.
しかしながら、h線はi線よりも波長が大きいため、光透過率が高い。このため、厚膜の感放射線性樹脂膜の硬化にh線を用いた場合であっても、感放射線性樹脂膜の低層部まで充分なエネルギーが到達しやすいので、パターニング後のレジストパターンの断面形状が矩形となり、所望のパターンを得ることができる。 However, since the h-line has a wavelength larger than that of the i-line, the light transmittance is high. For this reason, even when h rays are used for curing a thick radiation-sensitive resin film, sufficient energy can easily reach the lower layer of the radiation-sensitive resin film. The shape becomes rectangular, and a desired pattern can be obtained.
i線およびh線は上記のような特性を有するので、感放射線性樹脂膜の表層部のみならず低層部をも充分に硬化させ、所望の高精度なパターンを得るためには、本発明に係るネガ型感放射線性樹脂組成物は、以下の要件(1)および(2)を満たすことが好ましい。 Since i-line and h-line have the characteristics as described above, in order to sufficiently cure not only the surface layer part but also the low-layer part of the radiation-sensitive resin film and obtain a desired high-accuracy pattern, the present invention is applied. Such a negative radiation sensitive resin composition preferably satisfies the following requirements (1) and (2).
すなわち、本発明に係るネガ型感放射線性樹脂組成物を用いて、乾燥膜厚70μmの未硬化状態の感放射線性樹脂膜を形成したときに、
(1)該樹脂膜のi線(365nmの放射線)の透過率が、好ましくは10%以上、より好ましくは12〜30%であること。
(2)該樹脂膜のh線(405nmの放射線)の透過率が、好ましくは60%以上、より好ましくは65〜80%であること。That is, when a negative radiation sensitive resin composition according to the present invention is used to form an uncured radiation sensitive resin film having a dry film thickness of 70 μm,
(1) The transmittance of i-line (365 nm radiation) of the resin film is preferably 10% or more, more preferably 12 to 30%.
(2) The transmittance of h-line (405 nm radiation) of the resin film is preferably 60% or more, more preferably 65 to 80%.
このような特性を有する組成物を用いれば、5〜200μmの膜厚を有する感放射線性樹脂膜を基板上に形成し、i線およびh線を照射することにより、該感放射線性樹脂膜の表層部のみならず、底層部をも充分に硬化させ、所望の高精度なパターンを得ることができる。 If a composition having such characteristics is used, a radiation-sensitive resin film having a film thickness of 5 to 200 μm is formed on the substrate and irradiated with i-line and h-line. Not only the surface layer portion but also the bottom layer portion can be sufficiently cured to obtain a desired highly accurate pattern.
すなわち、双方の波長の透過率を向上させることにより、感放射線性樹脂膜の表面から内部へ透過する光の減衰を抑えることができるため、感放射線性樹脂膜全体にわたって均一に硬化させることにより、パターニング部分の断面における底辺と側壁とが略直角であるレジストパターンを得ることができる。これによって、例えばメッキ工程において電解メッキを実施することにより、ストレート形状のバンプを高精度で形成することが可能になる。 That is, by improving the transmittance of both wavelengths, it is possible to suppress the attenuation of light transmitted from the surface of the radiation sensitive resin film to the inside, so by uniformly curing over the entire radiation sensitive resin film, It is possible to obtain a resist pattern in which the bottom side and the side wall in the cross section of the patterning portion are substantially perpendicular. Accordingly, for example, by performing electrolytic plating in the plating process, it is possible to form a straight-shaped bump with high accuracy.
放射線の透過率は、例えば、下記のような方法で測定することができる。 The radiation transmittance can be measured, for example, by the following method.
先ず、アルカリ可溶性樹脂(A)、ラジカル重合性化合物(B)、ラジカル重合開始剤(C)および有機溶媒類(D)を所定の量で含有する上記ネガ型感放射線性樹脂組成物65重量部と、ジエチレングリコールエチルメチルエーテル35重量部とを混合して、ジエチレングリコールエチルメチルエーテル溶液を調製する。 First, 65 parts by weight of the negative radiation-sensitive resin composition containing a predetermined amount of the alkali-soluble resin (A), the radical polymerizable compound (B), the radical polymerization initiator (C), and the organic solvent (D). And 35 parts by weight of diethylene glycol ethyl methyl ether are mixed to prepare a diethylene glycol ethyl methyl ether solution.
次いで、上記溶液を用いてスピンコート法により厚さ1mmの石英基板上に塗膜を形成し、その後、ホットプレートにて120℃で5分間ベークして、溶媒を除去し、感放射線性樹脂膜を形成する。なお、この場合、予めベーク後における感放射線性樹脂膜の膜厚が70μmとなるように、スピンコート時の回転数をコントロールする。 Next, a coating film is formed on a quartz substrate having a thickness of 1 mm by spin coating using the above solution, and then baked on a hot plate at 120 ° C. for 5 minutes to remove the solvent, and the radiation sensitive resin film Form. In this case, the number of rotations during spin coating is controlled in advance so that the film thickness of the radiation-sensitive resin film after baking is 70 μm.
このようにして石英基板上に形成した感放射線性樹脂膜を、分光光度計(例えば、HITACHI Spectrophotometer U−2010)を用いて、該樹脂膜を有しない石英基板をリファレンスとして波長300〜500nmにおける透過率を測定する。 The radiation-sensitive resin film thus formed on the quartz substrate is transmitted at a wavelength of 300 to 500 nm using a spectrophotometer (for example, HITACHI Spectrophotometer U-2010) as a reference to the quartz substrate not having the resin film. Measure the rate.
また、本発明に係るネガ型感放射線性樹脂組成物は、吸光度を吸光係数に換算した場合、乾燥膜厚70μmの未硬化状態の感放射線性樹脂膜を形成したときに、以下の要件(3)および(4)を満たす組成物であることが好ましい。
(3)365nmの放射線における吸光係数が、15000m-1以下であること。
(4)405nmの放射線における吸光係数が、4000m-1以下であること。Moreover, the negative radiation sensitive resin composition according to the present invention has the following requirements (3 when an uncured radiation sensitive resin film having a dry film thickness of 70 μm is formed when the absorbance is converted into an extinction coefficient. ) And (4) are preferred.
(3) The extinction coefficient at 365 nm radiation is 15000 m −1 or less.
(4) The extinction coefficient at 405 nm radiation is 4000 m −1 or less.
吸光係数εは、測定した透過率を式ε=log(I0/I)/Lに当てはめることにより求めることができる(ここで、εは吸光係数(m-1)、Iは感放射線性樹脂膜を透過した直後の光の強さ(cd)、I0は該樹脂膜を透過する前の光の強さ(cd)、Lは該樹脂膜の乾燥膜厚(m)を示す)。The extinction coefficient ε can be obtained by fitting the measured transmittance to the formula ε = log (I 0 / I) / L (where ε is the extinction coefficient (m −1 ) and I is the radiation sensitive resin. The light intensity (cd) immediately after passing through the film, I 0 is the light intensity (cd) before passing through the resin film, and L is the dry film thickness (m) of the resin film.
ラジカル重合開始剤(C)の使用量は、アルカリ可溶性樹脂(A)100重量部に対して、通常は1〜40重量部、好ましくは5〜30重量部、より好ましくは10〜20重量部である。ラジカル重合開始剤(C)の使用量が前記範囲にあると、上記要件(1)〜(4)を満たす組成物を調製しやすくなる。 The usage-amount of a radical polymerization initiator (C) is 1-40 weight part normally with respect to 100 weight part of alkali-soluble resin (A), Preferably it is 5-30 weight part, More preferably, it is 10-20 weight part. is there. When the usage-amount of radical polymerization initiator (C) exists in the said range, it will become easy to prepare the composition which satisfy | fills said requirements (1)-(4).
ラジカル重合開始剤(C)としては、例えば、2,2−ジメトキシ−1,2−ジフェニルエタン−1−オン、4,4'−ビス(ジエチルアミノ)ベンゾフェノン、2−ベンジル−2−ジメチルアミノ−1−(4−モルフォリノフェニル)−ブタン−1−オン、2−メチル−1−[4−(メチルチオ)フェニル]−2−モルフォリノプロパン−1−オン、下記式(3)で表されるビイミダゾール化合物などが挙げられる。また、市販品としては、IRGACURE 369(チバ・スペシャルティ・ケミカルズ社製)、IRGACURE 907(チバ・スペシャルティ・ケミカルズ社製)などが挙げられる。これらの中では、上記要件(1)〜(4)を満たす組成物を調製しやすくなることから、ビイミダゾール化合物を用いることが好ましい。 Examples of the radical polymerization initiator (C) include 2,2-dimethoxy-1,2-diphenylethane-1-one, 4,4′-bis (diethylamino) benzophenone, 2-benzyl-2-dimethylamino-1 -(4-Morpholinophenyl) -butan-1-one, 2-methyl-1- [4- (methylthio) phenyl] -2-morpholinopropan-1-one, bi represented by the following formula (3) Examples include imidazole compounds. Moreover, as a commercial item, IRGACURE 369 (made by Ciba Specialty Chemicals), IRGACURE 907 (made by Ciba Specialty Chemicals), etc. are mentioned. In these, since it becomes easy to prepare the composition which satisfy | fills said requirements (1)-(4), it is preferable to use a biimidazole compound.
式(3)中、Xはそれぞれ独立に水素原子、メチル基または塩素原子を表し、Phはフェニル基を表す。 In formula (3), X represents a hydrogen atom, a methyl group, or a chlorine atom each independently, and Ph represents a phenyl group.
上記ビイミダゾール化合物としては、例えば、2,2’−ビス(2,4−ジクロロフェニル)−4,5,4’,5’−テトラフェニル−1,2’−ビイミダゾール、2,2’−ビス(2−クロロフェニル)−4,5,4’,5’−テトラフェニル−1,2’−ビイミダゾール、2,2’−ビス(2,4−ジクロロフェニル)−4,5,4’,5’−テトラフェニル−1,2’−ビイミダゾール、2,2’−ビス(2,4−ジメチルフェニル)−4,5,4’,5’−テトラフェニル−1,2’−ビイミダゾール、2,2’−ビス(2−メチルフェニル)−4,5,4’,5’−テトラフェニル−1,2’−ビイミダゾール、2,2’−ジフェニル−4,5,4’,5’−テトラフェニル−1,2’−ビイミダゾールなどが挙げられる。これらビイミダゾール化合物は1種単独で用いてもよく、2種以上を併用してもよい。 Examples of the biimidazole compound include 2,2′-bis (2,4-dichlorophenyl) -4,5,4 ′, 5′-tetraphenyl-1,2′-biimidazole and 2,2′-bis. (2-Chlorophenyl) -4,5,4 ′, 5′-tetraphenyl-1,2′-biimidazole, 2,2′-bis (2,4-dichlorophenyl) -4,5,4 ′, 5 ′ -Tetraphenyl-1,2'-biimidazole, 2,2'-bis (2,4-dimethylphenyl) -4,5,4 ', 5'-tetraphenyl-1,2'-biimidazole, 2, 2′-bis (2-methylphenyl) -4,5,4 ′, 5′-tetraphenyl-1,2′-biimidazole, 2,2′-diphenyl-4,5,4 ′, 5′-tetra And phenyl-1,2'-biimidazole. These biimidazole compounds may be used alone or in combination of two or more.
上記ビイミダゾール化合物の使用量は、アルカリ可溶性樹脂(A)100重量部に対して、好ましくは1〜30重量部、より好ましくは1〜20重量部、さらに好ましくは1〜10重量部である。上記ビイミダゾール化合物の使用量が前記範囲にあると、感放射線性樹脂膜の露光感度が良好で、かつ放射線が該樹脂膜の内部まで透過するため、抉れのないストレート形状のパターンを形成することができる。 The amount of the biimidazole compound used is preferably 1 to 30 parts by weight, more preferably 1 to 20 parts by weight, and still more preferably 1 to 10 parts by weight with respect to 100 parts by weight of the alkali-soluble resin (A). When the amount of the biimidazole compound is in the above range, the exposure sensitivity of the radiation-sensitive resin film is good and the radiation penetrates to the inside of the resin film. be able to.
<有機溶媒類(D)>
本発明に用いられる有機溶媒類(D)は、20℃,1気圧での飽和蒸気圧(以下、単に「飽和蒸気圧」ともいう)が特定の範囲にあるエチレングリコール系有機溶媒を含む。なお、本発明においてエチレングリコール系有機溶媒とは、下記式(4)で表される構造単位を有する有機溶媒を指す。<Organic solvents (D)>
The organic solvent (D) used in the present invention includes an ethylene glycol organic solvent having a saturated vapor pressure (hereinafter also simply referred to as “saturated vapor pressure”) at 20 ° C. and 1 atm in a specific range. In the present invention, the ethylene glycol organic solvent refers to an organic solvent having a structural unit represented by the following formula (4).
上記式(4)で表される構造単位を有する有機溶媒を用いることにより、ラジカル重合開始剤(C)などの上記各成分を良好に溶解させることができ、また、スピンコート法にて形成される感放射線性樹脂膜の膜厚の幅を充分に大きくすることが可能となる。 By using the organic solvent having the structural unit represented by the above formula (4), the above-described components such as the radical polymerization initiator (C) can be dissolved well, and the organic solvent is formed by a spin coating method. The width of the film thickness of the radiation sensitive resin film can be made sufficiently large.
上記エチレングリコール系有機溶媒の飽和蒸気圧は、3.0mmHg以下、好ましくは1.0mmHg以下、より好ましくは0.01〜1.0mmHgである。 The saturated vapor pressure of the ethylene glycol organic solvent is 3.0 mmHg or less, preferably 1.0 mmHg or less, more preferably 0.01 to 1.0 mmHg.
上記エチレングリコール系有機溶媒の飽和蒸気圧が上記範囲にあると、スピンコート法にて形成される感放射線性樹脂膜の膜厚の幅を充分に大きくすることが可能となる。また、薄膜の感放射性樹脂膜を形成するには、基板の回転時間や基板の回転速度を大きくする必要があるが、上記エチレングリコール系有機溶媒の飽和蒸気圧が上記範囲であれば、これらの条件を調節することにより、所望の膜厚の樹脂膜を得ることができる。 When the saturated vapor pressure of the ethylene glycol organic solvent is within the above range, the width of the film thickness of the radiation sensitive resin film formed by the spin coating method can be sufficiently increased. Further, in order to form a thin radiation-sensitive resin film, it is necessary to increase the rotation time of the substrate and the rotation speed of the substrate. If the saturated vapor pressure of the ethylene glycol organic solvent is in the above range, By adjusting the conditions, a resin film having a desired film thickness can be obtained.
上記エチレングリコール系有機溶媒の飽和蒸気圧が上記範囲を超えると、スピンコート法にて形成される感放射線性樹脂膜の膜厚の幅を充分に大きくできないことがある。また、基板の回転時間がある一定の時間を超えると、それ以上当該作業を実施したとしても、樹脂膜を薄膜化することが困難となることがある。 When the saturated vapor pressure of the ethylene glycol organic solvent exceeds the above range, the width of the film thickness of the radiation sensitive resin film formed by the spin coating method may not be sufficiently increased. Further, if the rotation time of the substrate exceeds a certain time, it may be difficult to reduce the thickness of the resin film even if the operation is performed further.
上記エチレングリコール系有機溶媒としては、例えば、ジエチレングリコールモノアルキルエーテル類、ジエチレングリコールジアルキルエーテル類、ジエチレングリコールモノアルキルエーテルアセテート類、エチレングリコールモノアルキルエーテルアセテート類などが挙げられる。これらは1種単独で用いてもよく、2種以上を併用してもよい。これらの中では、ジエチレングリコールジアルキルエーテル類およびジエチレングリコールモノアルキルエーテルアセテート類が好ましく、これらは1種単独で用いてもよく、2種を併用してもよい。 Examples of the ethylene glycol organic solvent include diethylene glycol monoalkyl ethers, diethylene glycol dialkyl ethers, diethylene glycol monoalkyl ether acetates, and ethylene glycol monoalkyl ether acetates. These may be used alone or in combination of two or more. Among these, diethylene glycol dialkyl ethers and diethylene glycol monoalkyl ether acetates are preferable, and these may be used alone or in combination of two.
上記ジエチレングリコールモノアルキルエーテル類としては、例えば、ジエチレングリコールモノメチルエーテル(飽和蒸気圧:0.23mmHg)、ジエチレングリコールモノエチルエーテル(飽和蒸気圧:0.13mmHg)などが挙げられる。これらのジエチレングリコールモノアルキルエーテル類は1種単独で用いてもよく、2種以上を併用してもよい。 Examples of the diethylene glycol monoalkyl ethers include diethylene glycol monomethyl ether (saturated vapor pressure: 0.23 mmHg), diethylene glycol monoethyl ether (saturated vapor pressure: 0.13 mmHg), and the like. These diethylene glycol monoalkyl ethers may be used alone or in combination of two or more.
上記ジエチレングリコールジアルキルエーテル類としては、例えば、ジエチレングリコールジメチルエーテル(飽和蒸気圧:3.0mmHg)、ジエチレングリコールエチルメチルエーテル(飽和蒸気圧:0.94mmHg)、ジエチレングリコールジエチルエーテル(飽和蒸気圧:0.38mmHg)などが挙げられる。これらのジエチレングリコールジアルキルエーテル類は1種単独で用いてもよく、2種以上を併用してもよい。 Examples of the diethylene glycol dialkyl ethers include diethylene glycol dimethyl ether (saturated vapor pressure: 3.0 mmHg), diethylene glycol ethyl methyl ether (saturated vapor pressure: 0.94 mmHg), diethylene glycol diethyl ether (saturated vapor pressure: 0.38 mmHg), and the like. Can be mentioned. These diethylene glycol dialkyl ethers may be used alone or in combination of two or more.
上記ジエチレングリコールモノアルキルエーテルアセテート類としては、例えば、ジエチレングリコールモノエチルエーテルアセテート(飽和蒸気圧:0.05mmHg)、ジエチレングリコールモノブチルエーテルアセテート(飽和蒸気圧:0.01mmHg)などが挙げられる。これらのジエチレングリコールモノアルキルエーテルアセテート類は1種単独で用いてもよく、2種以上を併用してもよい。 Examples of the diethylene glycol monoalkyl ether acetates include diethylene glycol monoethyl ether acetate (saturated vapor pressure: 0.05 mmHg), diethylene glycol monobutyl ether acetate (saturated vapor pressure: 0.01 mmHg), and the like. These diethylene glycol monoalkyl ether acetates may be used alone or in combination of two or more.
上記エチレングリコールモノアルキルエーテルアセテート類としては、例えば、エチレングリコールモノエチルエーテルアセテート(飽和蒸気圧:1.09mmHg)、エチレングリコールモノブチルエーテルアセテート(飽和蒸気圧:0.3mmHg)などが挙げられる。これらのエチレングリコールモノアルキルエーテルアセテート類は1種単独で用いてもよく、2種以上を併用してもよい。 Examples of the ethylene glycol monoalkyl ether acetates include ethylene glycol monoethyl ether acetate (saturated vapor pressure: 1.09 mmHg), ethylene glycol monobutyl ether acetate (saturated vapor pressure: 0.3 mmHg), and the like. These ethylene glycol monoalkyl ether acetates may be used alone or in combination of two or more.
また、上記エチレングリコール系有機溶媒の沸点は、1気圧において、好ましくは150〜250℃、さらに好ましくは170〜230℃である。上記エチレングリコール系有機溶媒の沸点が前記範囲にあると、スピンコート法にて感放射線性樹脂膜を形成する際、面内均一性およびスピンコート可能な膜厚の範囲が広くなる点で優れている。 The ethylene glycol organic solvent has a boiling point of preferably 150 to 250 ° C., more preferably 170 to 230 ° C. at 1 atmosphere. When the boiling point of the ethylene glycol-based organic solvent is in the above range, it is excellent in that the range of in-plane uniformity and the spin coatable film thickness is wide when forming a radiation sensitive resin film by a spin coating method. Yes.
本発明において、上記各成分の溶解性を向上させる目的で、有機溶媒類(D)として、上記エチレングリコール系有機溶媒とともにその他の有機溶媒を用いてもよい。 In the present invention, for the purpose of improving the solubility of each of the above components, other organic solvents may be used as the organic solvent (D) together with the ethylene glycol organic solvent.
上記その他の有機溶媒としては、例えば、メタノール、エタノール、プロピレングリコールなどのアルコール類;
テトラヒドロフラン、ジオキサンなどの環状エーテル類;
プロピレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテルなどのプロピレングリコールモノアルキルエーテル類;プロピレングリコールモノメチルエーテルアセテート、プロピレングリコールモノエチルエーテルアセテートなどのプロピレングリコールモノアルキルエーテルアセテート類;
トルエン、キシレンなどの芳香族炭化水素類;
アセトン、メチルエチルケトン、メチルイソブチルケトン、シクロヘキサノン、4−ヒドロキシ−4−メチル−2−ペンタノンなどのケトン類;
酢酸エチル、酢酸ブチル、エトキシ酢酸エチル、ヒドロキシ酢酸エチル、2−ヒドロキシプロピオン酸エチル、2−ヒドロキシ−2−メチルプロピオン酸エチル、2−ヒドロキシ−3−メチルブタン酸メチル、3−メトキシプロピオン酸メチル、3−メトキシプロピオン酸エチル、3−エトキシプロピオン酸エチル、3−エトキシプロピオン酸メチル、乳酸エチルなどのエステル類;
N−メチルホルムアミド、N,N−ジメチルホルムアミド、N−メチルホルムアニリド、N−メチルアセトアミド、N,N−ジメチルアセトアミド、N−メチルピロリドン、ジメチルスルホキシド、ベンジルエチルエーテル、ジヘキシルエーテル、アセトニルアセトン、イソホロン、カプロン酸、カプリル酸、1−オクタノール、1−ノナノール、ベンジルアルコール、酢酸ベンジル、安息香酸エチル、シュウ酸ジエチル、γ−ブチロラクトン、炭酸エチレン、炭酸プロピレン、フェニルセロソルブアセテートなどが挙げられる。Examples of the other organic solvents include alcohols such as methanol, ethanol and propylene glycol;
Cyclic ethers such as tetrahydrofuran and dioxane;
Propylene glycol monoalkyl ethers such as propylene glycol monomethyl ether and propylene glycol monoethyl ether; propylene glycol monoalkyl ether acetates such as propylene glycol monomethyl ether acetate and propylene glycol monoethyl ether acetate;
Aromatic hydrocarbons such as toluene and xylene;
Ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone;
Ethyl acetate, butyl acetate, ethyl ethoxyacetate, ethyl hydroxyacetate, ethyl 2-hydroxypropionate, ethyl 2-hydroxy-2-methylpropionate, methyl 2-hydroxy-3-methylbutanoate, methyl 3-methoxypropionate, 3 Esters such as ethyl methoxypropionate, ethyl 3-ethoxypropionate, methyl 3-ethoxypropionate, ethyl lactate;
N-methylformamide, N, N-dimethylformamide, N-methylformanilide, N-methylacetamide, N, N-dimethylacetamide, N-methylpyrrolidone, dimethylsulfoxide, benzylethyl ether, dihexyl ether, acetonylacetone, isophorone , Caproic acid, caprylic acid, 1-octanol, 1-nonanol, benzyl alcohol, benzyl acetate, ethyl benzoate, diethyl oxalate, γ-butyrolactone, ethylene carbonate, propylene carbonate, phenyl cellosolve acetate and the like.
本発明における上記エチレングリコール系有機溶媒の使用量は、有機溶媒類(D)100重量%に対して、好ましくは50重量%以上、より好ましくは80重量%以上である。有機溶媒類(D)として上記エチレングリコール系有機溶媒を前記範囲で用いることにより、膜厚が大きく異なる樹脂膜を形成することがより容易となる。 The amount of the ethylene glycol organic solvent used in the present invention is preferably 50% by weight or more, more preferably 80% by weight or more with respect to 100% by weight of the organic solvent (D). By using the ethylene glycol organic solvent in the above range as the organic solvent (D), it becomes easier to form resin films having greatly different film thicknesses.
本発明における有機溶媒類(D)の使用量は、ネガ型感放射線性樹脂組成物の用途などにより適宜選択することが可能である。例えば、バンプなどのメッキ造形物を製造するために、膜厚5〜100μmの感放射線性樹脂膜を形成する場合には、アルカリ可溶性樹脂(A)100重量部に対して、通常は50重量部以上、好ましくは60〜300重量部、より好ましくは80〜200重量部である。 The amount of the organic solvent (D) used in the present invention can be appropriately selected depending on the use of the negative radiation sensitive resin composition. For example, in the case of forming a radiation sensitive resin film having a film thickness of 5 to 100 μm in order to produce a plated model such as a bump, it is usually 50 parts by weight with respect to 100 parts by weight of the alkali-soluble resin (A). As mentioned above, Preferably it is 60-300 weight part, More preferably, it is 80-200 weight part.
<その他の成分>
本発明に係るネガ型感放射線性樹脂組成物には、上述の成分の他に、必要に応じて、熱重合禁止剤、界面活性剤、接着助剤、その他添加剤を配合してもよい。<Other ingredients>
In addition to the above-mentioned components, the negative radiation-sensitive resin composition according to the present invention may contain a thermal polymerization inhibitor, a surfactant, an adhesion aid, and other additives as necessary.
≪熱重合禁止剤≫
熱重合禁止剤としては、例えば、ピロガロール、ベンゾキノン、ヒドロキノン、メチルヒドロキノン、メチレンブルー、tert−ブチルカテコール、モノベンジルエーテル、アミルキノン、アミロキシヒドロキノン、フェノール、n−ブチルフェノール、ヒドロキノンモノプロピルエーテル、4,4’−(1−メチルエチリデン)ビス(2−メチルフェノール)、4,4’−(1−メチルエチリデン)ビス(2,6−ジメチルフェノール)、4,4’−[1−〔4−(1−(4−ヒドロキシフェニル)−1−メチルエチル)フェニル〕エチリデン]ビスフェノール、4,4’,4”−エチリデントリス(2−メチルフェノール)、4,4’,4”−エチリデントリスフェノール、1,1,3−トリス(2,5−ジメチル−4−ヒドロキシフェニル)−3−フェニルプロパンなどが挙げられる。≪Thermal polymerization inhibitor≫
Examples of the thermal polymerization inhibitor include pyrogallol, benzoquinone, hydroquinone, methylhydroquinone, methylene blue, tert-butylcatechol, monobenzyl ether, amylquinone, amyloxyhydroquinone, phenol, n-butylphenol, hydroquinone monopropyl ether, 4,4 ′. -(1-methylethylidene) bis (2-methylphenol), 4,4 '-(1-methylethylidene) bis (2,6-dimethylphenol), 4,4'-[1- [4- (1- (4-hydroxyphenyl) -1-methylethyl) phenyl] ethylidene] bisphenol, 4,4 ′, 4 ″ -ethylidenetris (2-methylphenol), 4,4 ′, 4 ″ -ethylidenetrisphenol, 1,1 , 3-Tris (2,5-dimethyl-4-hydroxyphenyl Such as 3-phenyl propane.
上記熱重合禁止剤を使用する場合、その使用量は、アルカリ可溶性樹脂(A)100重量部に対して、好ましくは5重量部以下である。 When using the said thermal-polymerization inhibitor, the usage-amount is preferably 5 weight part or less with respect to 100 weight part of alkali-soluble resin (A).
≪界面活性剤≫
本発明に係るネガ型感放射線性樹脂組成物には、塗布性、消泡性、レベリング性などを向上させる目的で、界面活性剤を配合してもよい。≪Surfactant≫
In the negative radiation sensitive resin composition according to the present invention, a surfactant may be blended for the purpose of improving coating properties, antifoaming properties, leveling properties and the like.
上記界面活性剤としては、市販されている界面活性剤をそのまま用いることができる。市販されている界面活性剤の具体例としては、例えば、NBX−15、FTX−204D、FTX−208D、FTX−212D、FTX−216D,FTX−218、FTX−220D、FTX−222D(以上、(株)ネオス製)、BM−1000、BM−1100(以上、BMケミー社製)、メガファックF142D、同F172、同F173、同F183(以上、大日本インキ化学工業(株)製)、フロラードFC−135、同FC−170C、同FC−430、同FC−431(以上、住友スリーエム(株)製)、サーフロンS−112、同S−113、同S−131、同S−141、同S−145(以上、旭硝子(株)製)、SH−28PA、同−190、同−193、SZ−6032、SF−8428(以上、東レダウコーニングシリコーン(株)製)などが挙げられる。これらの中ではFTX−216D、FTX−218、FTX−220Dが好ましい。 As the surfactant, a commercially available surfactant can be used as it is. Specific examples of commercially available surfactants include, for example, NBX-15, FTX-204D, FTX-208D, FTX-212D, FTX-216D, FTX-218, FTX-220D, FTX-222D (above, ( Manufactured by Neos Co., Ltd.), BM-1000, BM-1100 (above, manufactured by BM Chemie), MegaFac F142D, F172, F173, F183 (above, manufactured by Dainippon Ink and Chemicals), Florad FC -135, FC-170C, FC-430, FC-431 (above, manufactured by Sumitomo 3M), Surflon S-112, S-113, S-131, S-141, S -145 (above, manufactured by Asahi Glass Co., Ltd.), SH-28PA, -190, -193, SZ-6032, SF-8428 (above, Toray Dow Corni Grayed made Silicone Co.) and the like. Among these, FTX-216D, FTX-218, and FTX-220D are preferable.
上記界面活性剤を使用する場合、その使用量は、アルカリ可溶性樹脂(A)100重量部に対して、好ましくは5重量部以下である。 When using the said surfactant, the usage-amount is preferably 5 weight part or less with respect to 100 weight part of alkali-soluble resin (A).
≪接着助剤≫
本発明に係るネガ型感放射線性樹脂組成物には、基板に対する感放射線性樹脂膜の接着性を向上させるために、接着助剤を配合してもよい。接着助剤としては、官能性シランカップリング剤が好ましい。ここで、官能性シランカップリング剤とは、カルボキシル基、メタクリロイル基、ビニル基、イソシアネート基、エポキシ基などの反応性置換基を有するシランカップリング剤を意味する。≪Adhesion aid≫
In order to improve the adhesiveness of the radiation sensitive resin film with respect to a board | substrate, you may mix | blend an adhesion assistant with the negative radiation sensitive resin composition which concerns on this invention. As the adhesion assistant, a functional silane coupling agent is preferable. Here, the functional silane coupling agent means a silane coupling agent having a reactive substituent such as a carboxyl group, a methacryloyl group, a vinyl group, an isocyanate group, or an epoxy group.
上記官能性シランカップリング剤としては、例えば、トリメトキシシリル安息香酸、γ−メタクリロキシプロピルトリメトキシシラン、ビニルトリアセトキシシラン、ビニルトリメトキシシラン、γ−イソシアナートプロピルトリエトキシシラン、γ−グリシドキシプロピルトリメトキシシラン、β−(3,4−エポキシシクロヘキシル)エチルトリメトキシシランなどが挙げられる。 Examples of the functional silane coupling agent include trimethoxysilylbenzoic acid, γ-methacryloxypropyltrimethoxysilane, vinyltriacetoxysilane, vinyltrimethoxysilane, γ-isocyanatopropyltriethoxysilane, and γ-glycid. Examples thereof include xylpropyltrimethoxysilane and β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane.
上記接着助剤を使用する場合、その使用量は、アルカリ可溶性樹脂(A)100重量部に対して、好ましくは20重量部以下である。 When using the said adhesion adjuvant, the usage-amount is preferably 20 weight part or less with respect to 100 weight part of alkali-soluble resin (A).
≪その他添加剤≫
本発明に係るネガ型感放射線性樹脂組成物には、感放射線性樹脂膜のアルカリ性の現像液に対する溶解性を微調整するために、カルボン酸およびその誘導体を配合してもよい。また、充填材、着色剤、粘度調整剤などを配合してもよい。≪Other additives≫
In order to finely adjust the solubility of the radiation sensitive resin film in an alkaline developer, the negative radiation sensitive resin composition according to the present invention may be mixed with a carboxylic acid and a derivative thereof. Moreover, you may mix | blend a filler, a coloring agent, a viscosity modifier, etc.
上記カルボン酸およびその誘導体としては、例えば、酢酸、プロピオン酸、n−酪酸、iso−酪酸、n−吉草酸、iso−吉草酸、安息香酸、ケイ皮酸などのモノカルボン酸;
乳酸、2−ヒドロキシ酪酸、3−ヒドロキシ酪酸、サリチル酸、m−ヒドロキシ安息香酸、p−ヒドロキシ安息香酸、2−ヒドロキシケイ皮酸、3−ヒドロキシケイ皮酸、4−ヒドロキシケイ皮酸、5−ヒドロキシイソフタル酸、シリンギン酸などのヒドロキシモノカルボン酸;
シュウ酸、コハク酸、グルタル酸、アジピン酸、マレイン酸、イタコン酸、ヘキサヒドロフタル酸、フタル酸、イソフタル酸、テレフタル酸、1,2−シクロヘキサンジカルボン酸、1,2,4−シクロヘキサントリカルボン酸、トリメリット酸、ピロメリット酸、シクロペンタンテトラカルボン酸、ブタンテトラカルボン酸、1,2,5,8−ナフタレンテトラカルボン酸などの多価カルボン酸;
無水イタコン酸、無水コハク酸、無水シトラコン酸、無水ドデセニルコハク酸、無水トリカルバニル酸、無水マレイン酸、無水ヘキサヒドロフタル酸、無水メチルテトラヒドロフタル酸、無水ハイミック酸、1,2,3,4−ブタンテトラカルボン酸二無水物、シクロペンタンテトラカルボン酸二無水物、無水フタル酸、無水ピロメリット酸、無水トリメリット酸、無水ベンゾフェノンテトラカルボン酸、エチレングリコールビス無水トリメリテート、グリセリントリス無水トリメリテートなどの酸無水物などが挙げられる。Examples of the carboxylic acid and derivatives thereof include monocarboxylic acids such as acetic acid, propionic acid, n-butyric acid, iso-butyric acid, n-valeric acid, iso-valeric acid, benzoic acid, and cinnamic acid;
Lactic acid, 2-hydroxybutyric acid, 3-hydroxybutyric acid, salicylic acid, m-hydroxybenzoic acid, p-hydroxybenzoic acid, 2-hydroxycinnamic acid, 3-hydroxycinnamic acid, 4-hydroxycinnamic acid, 5-hydroxy Hydroxymonocarboxylic acids such as isophthalic acid, syringic acid;
Oxalic acid, succinic acid, glutaric acid, adipic acid, maleic acid, itaconic acid, hexahydrophthalic acid, phthalic acid, isophthalic acid, terephthalic acid, 1,2-cyclohexanedicarboxylic acid, 1,2,4-cyclohexanetricarboxylic acid, Polyvalent carboxylic acids such as trimellitic acid, pyromellitic acid, cyclopentanetetracarboxylic acid, butanetetracarboxylic acid, 1,2,5,8-naphthalenetetracarboxylic acid;
Itaconic anhydride, succinic anhydride, citraconic anhydride, dodecenyl succinic anhydride, tricarbanilic anhydride, maleic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, hymic anhydride, 1,2,3,4-butanetetra Acid anhydrides such as carboxylic dianhydride, cyclopentanetetracarboxylic dianhydride, phthalic anhydride, pyromellitic anhydride, trimellitic anhydride, benzophenone tetracarboxylic anhydride, ethylene glycol bistrimellitic anhydride, glycerin tris anhydrous trimellitate Etc.
上記充填材としては、例えば、シリカ、アルミナ、タルク、ベントナイト、ジルコニウムシリケート、粉末ガラスなどが挙げられる。 Examples of the filler include silica, alumina, talc, bentonite, zirconium silicate, and powdered glass.
上記着色剤としては、例えば、アルミナ白、クレー、炭酸バリウム、硫酸バリウムなどの体質顔料;亜鉛華、鉛白、黄鉛、鉛丹、群青、紺青、酸化チタン、クロム酸亜鉛、ベンガラ、カーボンブラックなどの無機顔料;ブリリアントカーミン6B、パーマネントレッド6B、パーマネントレッドR、ベンジジンイエロー、フタロシアニンブルー、フタロシアニングリーンなどの有機顔料;マゼンタ、ローダミンなどの塩基性染料;ダイレクトスカーレット、ダイレクトオレンジなどの直接染料;ローセリン、メタニルイエローなどの酸性染料などが挙げられる。 Examples of the colorant include extender pigments such as alumina white, clay, barium carbonate, and barium sulfate; zinc white, lead white, yellow lead, red lead, ultramarine, bitumen, titanium oxide, zinc chromate, bengara, carbon black Inorganic pigments such as: Brilliant Carmine 6B, Permanent Red 6B, Permanent Red R, organic pigments such as benzidine yellow, phthalocyanine blue, phthalocyanine green; basic dyes such as magenta and rhodamine; direct dyes such as direct scarlet and direct orange; And acid dyes such as metanil yellow.
上記粘度調整剤としては、例えば、ベントナイト、シリカゲル、アルミニウム粉末などが挙げられる。 Examples of the viscosity modifier include bentonite, silica gel, and aluminum powder.
なお、粘度調整剤の中には充填材または着色剤、充填材の中には着色剤または粘度調整剤、着色剤の中には充填材または粘度調整剤として用いられるものもある。 Some viscosity modifiers are used as fillers or colorants, some fillers are used as colorants or viscosity modifiers, and some colorants are used as fillers or viscosity modifiers.
上記その他添加剤を使用する場合、その使用量は、本発明の目的を損なわない範囲内であればよく、上述のアルカリ可溶性樹脂(A)、ラジカル重合性化合物(B)およびラジカル重合開始剤(C)の合計100重量部に対して、好ましくは50重量部以下である。 When using the above-mentioned other additives, the amount used may be within a range that does not impair the object of the present invention. The alkali-soluble resin (A), the radical polymerizable compound (B) and the radical polymerization initiator ( Preferably it is 50 weight part or less with respect to a total of 100 weight part of C).
本発明に係るネガ型感放射線性樹脂組成物の粘度は、上述の各成分の添加量(特に有機溶媒類(D)や粘度調整剤などの添加量)によって適宜調整することができるが、その範囲は通常は50〜10000cP、好ましくは100〜5000cPである。 The viscosity of the negative radiation-sensitive resin composition according to the present invention can be adjusted as appropriate according to the amount of each component described above (particularly, the amount of organic solvent (D), viscosity modifier, etc.). The range is usually 50 to 10000 cP, preferably 100 to 5000 cP.
<ネガ型感放射線性樹脂組成物の用途>
本発明に係るネガ型感放射線性樹脂組成物を用いることにより、同一の樹脂組成物を用いても、スピンコート法の実施条件(例えば、基板の回転速度、基板の回転時間)を変更することにより、膜厚が大きく異なる感放射線性樹脂膜を形成することが可能となる。<Application of negative radiation sensitive resin composition>
By using the negative radiation sensitive resin composition according to the present invention, even if the same resin composition is used, the spin coating method implementation conditions (for example, the rotation speed of the substrate, the rotation time of the substrate) can be changed. Thus, it becomes possible to form radiation-sensitive resin films having greatly different film thicknesses.
このような上記ネガ型感放射線性樹脂組成物を用いて形成されるレジストパターンを鋳型として用いることにより、種々の高さを有するバンプや配線などのメッキ造形物を精度よく製造することができる。 By using a resist pattern formed using such a negative radiation-sensitive resin composition as a mold, it is possible to accurately produce plated objects such as bumps and wirings having various heights.
〔感放射線性樹脂膜の形成方法〕
本発明に係るネガ型感放射線性樹脂組成物を用いて、スピンコート法により基板上に感放射線性樹脂膜を形成することができる。このように、本発明に係るネガ型感放射線性樹脂組成物を用いることにより、同一の組成で厚膜から薄膜の感放射線性樹脂膜を形成できる。[Method of forming radiation-sensitive resin film]
A radiation-sensitive resin film can be formed on a substrate by spin coating using the negative radiation-sensitive resin composition according to the present invention. Thus, by using the negative radiation sensitive resin composition according to the present invention, a thin radiation sensitive resin film can be formed from a thick film with the same composition.
スピンコート法にて樹脂組成物からなる樹脂膜を形成する際、一般的に、該樹脂組成物の組成を変えずに膜厚をコントロールするには、スピンコートの回転数をコントロールすればよい。例えば、本発明に係るネガ型感放射線性樹脂組成物を用いた場合、スピンコートでの回転速度は、通常は800〜3000rpm、好ましくは800〜2000rpmであり、スピンコートでの回転時間は、通常は1秒〜300秒、好ましくは5秒〜200秒である。 When a resin film made of a resin composition is formed by a spin coating method, generally, in order to control the film thickness without changing the composition of the resin composition, the number of spin coating rotations may be controlled. For example, when the negative radiation sensitive resin composition according to the present invention is used, the rotation speed in spin coating is usually 800 to 3000 rpm, preferably 800 to 2000 rpm, and the rotation time in spin coating is usually Is 1 second to 300 seconds, preferably 5 seconds to 200 seconds.
一般的にスピンコートの回転時間を短時間にすると形成される樹脂膜は厚くなるが、その塗膜特性が悪化する。ところが本発明に係るネガ型感放射線性樹脂組成物を用いることにより、短時間でスピンコートを行ったとしても、良好な塗膜特性を有する感放射線性樹脂膜を得ることができる。例えば、本発明に係るネガ型感放射線性樹脂組成物を用いて厚膜(乾燥後膜厚が10μm以上、好ましくは40μm以上)の感放射線性樹脂膜を形成する場合には、回転速度を通常は1000〜3000rpm、回転時間を通常は1秒〜300秒、好ましくは5秒〜200秒とすればよい。 In general, when the spin coating rotation time is shortened, the formed resin film becomes thick, but its coating film characteristics deteriorate. However, by using the negative radiation-sensitive resin composition according to the present invention, a radiation-sensitive resin film having good coating properties can be obtained even if spin coating is performed in a short time. For example, when forming a radiation sensitive resin film having a thick film (film thickness after drying is 10 μm or more, preferably 40 μm or more) using the negative radiation sensitive resin composition according to the present invention, the rotation speed is usually Is 1000 to 3000 rpm, and the rotation time is usually 1 second to 300 seconds, preferably 5 seconds to 200 seconds.
上記ネガ型感放射線性樹脂組成物をスピンコートした後は、例えば50〜250℃で1〜30分間程度、得られた塗膜を加熱乾燥すればよい。 After the negative radiation-sensitive resin composition is spin-coated, the obtained coating film may be heat-dried at 50 to 250 ° C. for about 1 to 30 minutes, for example.
〔メッキ造形物〕
本発明に係るメッキ造形物は、上述のネガ型感放射線性樹脂組成物を用いて形成されたレジストパターンを鋳型として用い、電解メッキなどのメッキ処理を行うことにより製造される。[Plating model]
The plated model according to the present invention is manufactured by performing a plating process such as electrolytic plating using a resist pattern formed using the above-described negative radiation-sensitive resin composition as a mold.
〔メッキ造形物の製造方法〕
上記メッキ造形物は、例えば、(1)上述のネガ型感放射線性樹脂組成物からなる感放射線性樹脂膜を、バリアメタル層を有するウエハなどの基板上に形成する樹脂膜形成工程、(2)該樹脂膜を露光・現像してレジストパターンを形成する露光・現像工程、(3)該レジストパターンを鋳型として用い、電解メッキにより電極材料を析出させるといったメッキ処理を行うメッキ工程、および(4)該レジストパターンを剥離した後、必要に応じてバリアメタルをエッチングにより除去する剥離工程を実施することにより製造することができる。[Method of manufacturing plated model]
For example, (1) a resin film forming step of forming a radiation-sensitive resin film made of the above-described negative radiation-sensitive resin composition on a substrate such as a wafer having a barrier metal layer, (2) ) Exposure / development process for exposing / developing the resin film to form a resist pattern; (3) a plating process for performing a plating process using the resist pattern as a mold to deposit an electrode material by electrolytic plating; After the resist pattern is peeled off, the resist pattern can be manufactured by performing a peeling step for removing the barrier metal by etching, if necessary.
−(1)樹脂膜形成工程−
樹脂膜形成工程でウエハなどの基板上に形成される感放射線性樹脂膜は、本発明に係るネガ型感放射線性樹脂組成物を、スピンコート法により該基板上に塗布して乾燥することにより得ることができる。この樹脂膜形成工程では、例えば上記〔感放射線性樹脂膜の形成方法〕に記載したスピンコートの条件を採用すればよい。-(1) Resin film formation process-
The radiation sensitive resin film formed on a substrate such as a wafer in the resin film forming step is obtained by applying the negative radiation sensitive resin composition according to the present invention on the substrate by a spin coating method and drying the composition. Can be obtained. In this resin film forming step, for example, the spin coating conditions described in [Method of forming radiation-sensitive resin film] may be employed.
−(2)露光・現像工程−
露光した感放射線性樹脂膜を現像するために用いるアルカリ性の現像液は、1種または2種以上のアルカリ性化合物を水などに溶解させることにより得られる溶液である。なお、アルカリ性の現像液による現像処理がなされた後、通常は水洗処理が施される。-(2) Exposure and development process-
The alkaline developer used for developing the exposed radiation-sensitive resin film is a solution obtained by dissolving one or more alkaline compounds in water or the like. In addition, after the development process with an alkaline developer, a water washing process is usually performed.
−(3)メッキ工程−
露光・現像工程で得られた上記ウエハなどの基板を電解メッキ用の各種メッキ液に浸漬し、所望のメッキ厚となるように電流値および通電時間を設定してメッキ処理を行う。-(3) Plating process-
The substrate such as the wafer obtained in the exposure / development process is immersed in various plating solutions for electrolytic plating, and the current value and the energization time are set so as to obtain a desired plating thickness, and the plating process is performed.
−(4)剥離工程−
剥離工程において、メッキ処理したウエハなどの基板からレジストパターンを剥離するには、例えば、50〜80℃にて攪拌中の剥離液に該基板を1〜30分間浸漬すればよい。剥離処理後、必要に応じてドライエッチングやウェットエッチングによりバリアメタルを除去することによりメッキ造形物を得ることができる。-(4) Peeling process-
In the peeling step, in order to peel the resist pattern from a substrate such as a plated wafer, the substrate may be immersed in a peeling solution being stirred at 50 to 80 ° C. for 1 to 30 minutes, for example. After the peeling treatment, a plated model can be obtained by removing the barrier metal by dry etching or wet etching as necessary.
上記剥離液としては、例えば、水酸化ナトリウムや炭酸ナトリウムなどの水溶液、4級アンモニウム塩とジメチルスルホキシドと水との混合溶液などが挙げられる。 Examples of the stripping solution include aqueous solutions of sodium hydroxide and sodium carbonate, mixed solutions of quaternary ammonium salts, dimethyl sulfoxide, and water.
上記のように、本発明に係るネガ型感放射線性樹脂組成物は、厚さが大きく異なる感放射線性樹脂膜を形成することができるため、様々な厚さのメッキ造形物を製造することができる。 As described above, the negative radiation-sensitive resin composition according to the present invention can form radiation-sensitive resin films having greatly different thicknesses. it can.
以下、実施例を挙げて本発明をさらに具体的に説明する。但し、本発明はこれらの実施例に何ら制約されるものではない。なお、以下において「部」は重量部を意味する。 Hereinafter, the present invention will be described more specifically with reference to examples. However, the present invention is not limited to these examples. In the following, “part” means part by weight.
[合成例1]
窒素置換したドライアイス/メタノール還流器の付いたフラスコ中に、重合開始剤として2,2’−アゾビスイソブチロニトリル(5.0g)、および重合溶媒としてジエチレングリコールエチルメチルエーテル(90g)を仕込み、該重合開始剤が溶解するまで攪拌した。[Synthesis Example 1]
Into a flask equipped with a nitrogen-substituted dry ice / methanol refluxer, 2,2′-azobisisobutyronitrile (5.0 g) as a polymerization initiator and diethylene glycol ethyl methyl ether (90 g) as a polymerization solvent were charged. The mixture was stirred until the polymerization initiator was dissolved.
この溶液に、メタクリル酸(11g)、p−イソプロペニルフェノール(15g)、トリシクロ〔5.2.1.02,6〕デカニルメタクリレート(15g)、イソボルニルアクリレート(39g)、およびフェノキシポリエチレングリコールアクリレート(共栄社製、商品名「P−200A」)(20g)を仕込み、ゆるやかに攪拌を開始し、80℃まで昇温した。その後、80℃で6時間重合を行った。To this solution was added methacrylic acid (11 g), p-isopropenylphenol (15 g), tricyclo [5.2.1.0 2,6 ] decanyl methacrylate (15 g), isobornyl acrylate (39 g), and phenoxypolyethylene. Glycol acrylate (manufactured by Kyoeisha, trade name “P-200A”) (20 g) was charged, stirring was started gently, and the temperature was raised to 80 ° C. Thereafter, polymerization was carried out at 80 ° C. for 6 hours.
重合反応終了後、反応生成物を多量のシクロヘキサン中に滴下して凝固させた。この凝固物を水洗し、該凝固物を凝固物と同重量のテトラヒドロフランに再溶解した後、得られた溶液を多量のシクロヘキサン中に滴下して再度凝固させた。この再溶解および凝固作業を計3回行った後、得られた凝固物を40℃で48時間真空乾燥し、アルカリ可溶性樹脂A1を得た。 After completion of the polymerization reaction, the reaction product was dropped into a large amount of cyclohexane to solidify. The coagulated product was washed with water, and the coagulated product was redissolved in tetrahydrofuran having the same weight as the coagulated product, and then the obtained solution was dropped into a large amount of cyclohexane to coagulate again. After this redissolving and coagulation operations were performed three times in total, the obtained coagulated product was vacuum dried at 40 ° C. for 48 hours to obtain an alkali-soluble resin A1.
[実施例1]
(ネガ型感放射線性樹脂組成物の調製)
・アルカリ可溶性樹脂(A)としてアルカリ可溶性樹脂A1(100部)、
・ラジカル重合性化合物(B)としてポリエステルアクリレート(三官能以上)(商品名「アロニックスM−8060」、東亞合成(株)製)(60部)、およびトリメチロールプロパンPO変性(n=2)トリアクリレート(商品名「アロニックスM−320」、東亞合成(株)製)(10部)、
・ラジカル重合開始剤(C)として2−メチル−1−[4−(メチルチオ)フェニル]−2−モルフォリノプロパン−1−オン(商品名「IRGACURE 907」、チバ・スペシャルティ・ケミカルズ社製)(10部)、2,2’−ビス(2−クロロフェニル)−4,5,4’,5’−テトラフェニル−1,2’−ビイミダゾール(4部)、および4,4’−ビス(ジエチルアミノ)ベンゾフェノン(0.2部)、
・有機溶媒類(D)としてジエチレングリコールエチルメチルエーテル(102部)、
・界面活性剤としてNBX−15((株)ネオス製)(0.3部)
を混合・攪拌して均一な溶液を得た。この溶液を、孔径10μmのカプセルフィルターでろ過してネガ型感放射線性樹脂組成物(1)を得た。[Example 1]
(Preparation of a negative radiation sensitive resin composition)
・ Alkali-soluble resin A1 (100 parts) as alkali-soluble resin (A),
Polyester acrylate (trifunctional or higher) as the radical polymerizable compound (B) (trade name “Aronix M-8060”, manufactured by Toagosei Co., Ltd.) (60 parts), and trimethylolpropane PO-modified (n = 2) tri Acrylate (trade name “Aronix M-320”, manufactured by Toagosei Co., Ltd.) (10 parts),
2-methyl-1- [4- (methylthio) phenyl] -2-morpholinopropan-1-one (trade name “IRGACURE 907”, manufactured by Ciba Specialty Chemicals) as radical polymerization initiator (C) ( 10 parts), 2,2′-bis (2-chlorophenyl) -4,5,4 ′, 5′-tetraphenyl-1,2′-biimidazole (4 parts), and 4,4′-bis (diethylamino) ) Benzophenone (0.2 parts),
-Diethylene glycol ethyl methyl ether (102 parts) as the organic solvent (D),
・ NBX-15 (manufactured by Neos Co., Ltd.) (0.3 parts) as a surfactant
Were mixed and stirred to obtain a uniform solution. This solution was filtered through a capsule filter having a pore size of 10 μm to obtain a negative radiation sensitive resin composition (1).
(感放射線性樹脂膜の形成)
上記で得られたネガ型感放射線性樹脂組成物(1)を、スピンコーターを用いて直径4インチのシリコンウエハ基板上にスピンコートした後、ホットプレートで110℃、5分間加熱し、感放射線性樹脂膜を得た。得られた感放射線性樹脂膜について、以下の評価1および評価2を実施した。評価結果を表2に示す。(Formation of radiation-sensitive resin film)
The negative radiation sensitive resin composition (1) obtained above was spin-coated on a silicon wafer substrate having a diameter of 4 inches using a spin coater, and then heated on a hot plate at 110 ° C. for 5 minutes. A functional resin film was obtained. The following evaluation 1 and evaluation 2 were implemented about the obtained radiation sensitive resin film. The evaluation results are shown in Table 2.
なお、スピンコートは、回転速度300rpm、回転時間10秒間の条件でプレ回転を行った後、厚膜形成用回転速度として2400rpm、薄膜形成用回転速度として1200rpmで、それぞれ回転時間10秒間、20秒間、30秒間、40秒間、60秒間、120秒間の条件でメイン回転を行った。 In the spin coating, after pre-rotating under the conditions of a rotation speed of 300 rpm and a rotation time of 10 seconds, the rotation speed for thick film formation is 2400 rpm, the rotation speed for thin film formation is 1200 rpm, and the rotation time is 10 seconds and 20 seconds, respectively. The main rotation was performed for 30 seconds, 40 seconds, 60 seconds, and 120 seconds.
(評価1)
分光エリプソメーター(大塚電子(株)製、商品名「FE3000」)にて上記で得られた感放射線性樹脂膜の膜厚を測定し、上記条件により形成された該樹脂膜の最大膜厚と最小膜厚との差を算出した。(Evaluation 1)
The film thickness of the radiation sensitive resin film obtained above was measured with a spectroscopic ellipsometer (trade name “FE3000” manufactured by Otsuka Electronics Co., Ltd.), and the maximum film thickness of the resin film formed under the above conditions was measured. The difference from the minimum film thickness was calculated.
(評価2)
シリコンウエハ基板上に形成された感放射線性樹脂膜の塗膜特性について、目視で確認した。基板上に均一に樹脂膜が形成されている場合を「AA」、基板上の一部に均一でない樹脂膜が形成されている場合を「BB」、基板上の大部分に不均一な樹脂膜が形成されている場合を「CC」とした。(Evaluation 2)
The coating characteristic of the radiation sensitive resin film formed on the silicon wafer substrate was confirmed visually. “AA” when the resin film is uniformly formed on the substrate, “BB” when the non-uniform resin film is formed on a part of the substrate, and a non-uniform resin film on most of the substrate Was formed as “CC”.
[実施例2〜3、比較例1〜3]
実施例1において、表1に記載の各成分を用いたこと以外は実施例1と同様にして、ネガ型感放射線性樹脂組成物(2)〜(6)を得た。次いで、ネガ型感放射線性樹脂組成物(1)に代えてネガ型感放射線性樹脂組成物(2)〜(6)を用いたこと以外は実施例1と同様にして、感放射線性樹脂膜を形成し、評価1および評価2を実施した。評価結果を表2に示す。[Examples 2-3, Comparative Examples 1-3]
In Example 1, negative type radiation sensitive resin compositions (2) to (6) were obtained in the same manner as in Example 1 except that each component shown in Table 1 was used. Next, a radiation-sensitive resin film was obtained in the same manner as in Example 1 except that the negative-type radiation-sensitive resin compositions (2) to (6) were used in place of the negative-type radiation-sensitive resin composition (1). And evaluation 1 and evaluation 2 were performed. The evaluation results are shown in Table 2.
なお、表1記載の各成分の詳細は以下のとおりである。
A1:合成例1で合成したアルカリ可溶性樹脂A1
B1:ポリエステルアクリレート(三官能以上)(商品名「アロニックスM−8060」、東亞合成(株)製)
B2:トリメチロールプロパンPO変性(n=2)トリアクリレート(商品名「アロニックスM−320」、東亞合成(株)製)
C1:2−メチル−1−[4−(メチルチオ)フェニル]−2−モルフォリノプロパン−1−オン(商品名「IRGACURE 907」、チバ・スペシャルティ・ケミカルズ社製)
C2:2,2’−ビス(2−クロロフェニル)−4,5,4’,5’−テトラフェニル−1,2’−ビイミダゾール
C3:4,4’−ビス(ジエチルアミノ)ベンゾフェノン
D1:ジエチレングリコールエチルメチルエーテル
(20℃,1気圧下での飽和蒸気圧:0.94mmHg、沸点:176℃)
D2:ジエチレングリコールジエチルエーテル
(20℃,1気圧下での飽和蒸気圧:0.38mmHg、沸点:188.9℃)
D3:ジエチレングリコールモノエチルエーテルアセテート
(20℃,1気圧下での飽和蒸気圧:0.05mmHg、沸点:217.4℃)
DR1:プロピレングリコールモノメチルエーテルアセテート
(20℃,1気圧下での飽和蒸気圧:3.5mmHg、沸点:146℃)
DR2:プロピレングリコールモノメチルエーテル
(20℃,1気圧下での飽和蒸気圧:6.7mmHg、沸点:121℃)
DR3:乳酸エチル
(20℃,1気圧下での飽和蒸気圧:2.09mmHg、沸点:154℃)
In addition, the detail of each component of Table 1 is as follows.
A1: Alkali-soluble resin A1 synthesized in Synthesis Example 1
B1: Polyester acrylate (trifunctional or higher) (trade name “Aronix M-8060”, manufactured by Toagosei Co., Ltd.)
B2: Trimethylolpropane PO-modified (n = 2) triacrylate (trade name “Aronix M-320”, manufactured by Toagosei Co., Ltd.)
C1: 2-methyl-1- [4- (methylthio) phenyl] -2-morpholinopropan-1-one (trade name “IRGACURE 907”, manufactured by Ciba Specialty Chemicals)
C2: 2,2′-bis (2-chlorophenyl) -4,5,4 ′, 5′-tetraphenyl-1,2′-biimidazole C3: 4,4′-bis (diethylamino) benzophenone D1: diethylene glycol ethyl Methyl ether (saturated vapor pressure at 20 ° C. under 1 atm: 0.94 mmHg, boiling point: 176 ° C.)
D2: Diethylene glycol diethyl ether (saturated vapor pressure at 20 ° C. under 1 atm: 0.38 mmHg, boiling point: 188.9 ° C.)
D3: Diethylene glycol monoethyl ether acetate (saturated vapor pressure at 20 ° C. under 1 atm: 0.05 mmHg, boiling point: 217.4 ° C.)
DR1: Propylene glycol monomethyl ether acetate (saturated vapor pressure at 20 ° C. under 1 atm: 3.5 mmHg, boiling point: 146 ° C.)
DR2: Propylene glycol monomethyl ether (saturated vapor pressure at 20 ° C. and 1 atm: 6.7 mmHg, boiling point: 121 ° C.)
DR3: ethyl lactate (saturated vapor pressure at 20 ° C. under 1 atm: 2.09 mmHg, boiling point: 154 ° C.)
表2に示すように、実施例1〜3ではスピンコート法の実施条件を変更することにより、同一の樹脂組成物を用いて膜厚が大きく異なる樹脂膜が得られた。一方、比較例1〜3ではスピンコート法の実施条件を変更しても、同一の樹脂組成物を用いて膜厚が大きく異なる樹脂膜は得られなかった。 As shown in Table 2, in Examples 1 to 3, resin films having greatly different film thicknesses were obtained using the same resin composition by changing the execution conditions of the spin coating method. On the other hand, in Comparative Examples 1 to 3, resin films having greatly different film thicknesses using the same resin composition could not be obtained even when the execution conditions of the spin coating method were changed.
具体的には、回転速度の差が1200rpmの条件では、実施例の結果によれば10〜47μm程度の樹脂膜を同一の樹脂組成物を用いて形成することが可能であるが、比較例の結果によれば15〜47μm程度の樹脂膜しか得られていない。 Specifically, under the condition that the rotational speed difference is 1200 rpm, according to the results of the examples, it is possible to form a resin film of about 10 to 47 μm using the same resin composition. According to the results, only a resin film of about 15 to 47 μm is obtained.
上記の差は、樹脂組成物の種類を変更することなくスピンコート法の実施条件を変更することにより、種々の膜厚を有する樹脂膜を形成可能であることを示し、特にμm単位の精度が要求される、種々の高さを有するバンプや配線などのメッキ造形物の製造において、本発明のネガ型樹脂組成物が好適に用いられることを示している。 The above difference shows that it is possible to form resin films having various film thicknesses by changing the execution conditions of the spin coating method without changing the type of the resin composition. This shows that the negative resin composition of the present invention is suitably used in the production of required plated products such as bumps and wirings having various heights.
Claims (6)
(B)エチレン性不飽和二重結合を有するラジカル重合性化合物、
(C)感放射線性ラジカル重合開始剤、および
(D)20℃,1気圧での飽和蒸気圧が3.0mmHg以下のエチレングリコール系有機溶媒を含む有機溶媒類(ここで、前記有機溶媒類(D)100重量%に対して、前記エチレングリコール系有機溶媒の量は50重量%以上である。)
を含有することを特徴とするネガ型感放射線性樹脂組成物。 (A) an alkali-soluble resin having a phenolic hydroxyl group,
(B) a radically polymerizable compound having an ethylenically unsaturated double bond,
(C) a radiation-sensitive radical polymerization initiator, and (D) an organic solvent containing an ethylene glycol organic solvent having a saturated vapor pressure of 3.0 mmHg or less at 20 ° C. and 1 atm (wherein the organic solvents ( D) The amount of the ethylene glycol organic solvent is 50% by weight or more with respect to 100% by weight.
A negative-type radiation-sensitive resin composition comprising:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010518972A JP5360059B2 (en) | 2008-07-01 | 2009-06-08 | Negative radiation sensitive resin composition |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008172543 | 2008-07-01 | ||
JP2008172543 | 2008-07-01 | ||
JP2010518972A JP5360059B2 (en) | 2008-07-01 | 2009-06-08 | Negative radiation sensitive resin composition |
PCT/JP2009/060438 WO2010001691A1 (en) | 2008-07-01 | 2009-06-08 | Negative radiation-sensitive resin composition |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2010001691A1 JPWO2010001691A1 (en) | 2011-12-15 |
JP5360059B2 true JP5360059B2 (en) | 2013-12-04 |
Family
ID=41465794
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010518972A Active JP5360059B2 (en) | 2008-07-01 | 2009-06-08 | Negative radiation sensitive resin composition |
Country Status (5)
Country | Link |
---|---|
US (1) | US8178279B2 (en) |
JP (1) | JP5360059B2 (en) |
KR (1) | KR101598240B1 (en) |
TW (1) | TWI452430B (en) |
WO (1) | WO2010001691A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201214033A (en) * | 2010-06-17 | 2012-04-01 | Sumitomo Chemical Co | Photosensitive resin composition |
JP5742213B2 (en) * | 2010-12-27 | 2015-07-01 | Jsr株式会社 | A photosensitive composition for forming a partition, a method for forming a partition for electronic paper, a partition for electronic paper, and electronic paper. |
JP6113078B2 (en) * | 2011-01-18 | 2017-04-12 | エルジー・ケム・リミテッド | Photosensitive resin composition, photosensitive material and method for producing photosensitive material |
JP2012241127A (en) * | 2011-05-20 | 2012-12-10 | Hitachi Chemical Co Ltd | Photocurable resin composition, and photocurable resin composition varnish and photocurable resin composition cured product using the same |
JP6233271B2 (en) | 2013-12-27 | 2017-11-22 | Jsr株式会社 | Photosensitive resin composition and method for producing resist pattern |
EP3085661B1 (en) | 2015-04-21 | 2017-12-27 | JSR Corporation | Method of producing microfluidic device |
WO2022030052A1 (en) * | 2020-08-07 | 2022-02-10 | 昭和電工マテリアルズ株式会社 | Photosensitive resin composition, photosensitive element, method for forming resist pattern, and method for producing printed wiring board |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06148885A (en) * | 1992-11-10 | 1994-05-27 | Tokyo Ohka Kogyo Co Ltd | Photosensitive resin composition and ps board using that |
JPH06289611A (en) * | 1993-04-02 | 1994-10-18 | Tokyo Ohka Kogyo Co Ltd | Photopolymerizable composition |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6010824A (en) | 1992-11-10 | 2000-01-04 | Tokyo Ohka Kogyo Co., Ltd. | Photosensitive resin composition containing a triazine compound and a pre-sensitized plate using the same, and photosensitive resin composition containing acridine and triazine compounds and a color filter and a pre-sensitized plate using the same |
JPH0915857A (en) * | 1995-06-29 | 1997-01-17 | Hitachi Chem Co Ltd | Colored image forming material, photosensitive solution using it, photosensitive element, and manufacture of color filter |
JP3867177B2 (en) * | 1997-04-30 | 2007-01-10 | Jsr株式会社 | Radiation sensitive composition for color filter |
JPH1138225A (en) * | 1997-07-17 | 1999-02-12 | Jsr Corp | Radiation sensitive composition for color filter |
US6756165B2 (en) * | 2000-04-25 | 2004-06-29 | Jsr Corporation | Radiation sensitive resin composition for forming barrier ribs for an EL display element, barrier rib and EL display element |
JP2006259454A (en) * | 2005-03-18 | 2006-09-28 | Jsr Corp | Radiation-sensitive resin composition, projection and spacer formed of it, and liquid crystal display element with them |
JP4655726B2 (en) | 2005-04-01 | 2011-03-23 | Jsr株式会社 | Negative radiation sensitive resin composition |
JP2007226018A (en) * | 2006-02-24 | 2007-09-06 | Jsr Corp | Inorganic particle-containing resin composition, transfer film and method for producing member for display panel |
JP4765974B2 (en) | 2006-03-30 | 2011-09-07 | Jsr株式会社 | Negative radiation sensitive resin composition |
TWI480698B (en) | 2006-03-30 | 2015-04-11 | Jsr Corp | Radiation-sensitive negative resin composition |
KR101313538B1 (en) * | 2006-04-06 | 2013-10-01 | 주식회사 동진쎄미켐 | Negative photosensitive resin composition |
JP5585065B2 (en) * | 2009-01-30 | 2014-09-10 | Jsr株式会社 | Photosensitive insulating resin composition, cured product thereof and method for producing insulating film |
-
2009
- 2009-06-08 KR KR1020107029696A patent/KR101598240B1/en active IP Right Grant
- 2009-06-08 JP JP2010518972A patent/JP5360059B2/en active Active
- 2009-06-08 WO PCT/JP2009/060438 patent/WO2010001691A1/en active Application Filing
- 2009-06-24 TW TW098121202A patent/TWI452430B/en active
-
2010
- 2010-12-21 US US12/973,930 patent/US8178279B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06148885A (en) * | 1992-11-10 | 1994-05-27 | Tokyo Ohka Kogyo Co Ltd | Photosensitive resin composition and ps board using that |
JPH06289611A (en) * | 1993-04-02 | 1994-10-18 | Tokyo Ohka Kogyo Co Ltd | Photopolymerizable composition |
Also Published As
Publication number | Publication date |
---|---|
KR20110020871A (en) | 2011-03-03 |
TWI452430B (en) | 2014-09-11 |
JPWO2010001691A1 (en) | 2011-12-15 |
TW201003318A (en) | 2010-01-16 |
US20110086938A1 (en) | 2011-04-14 |
WO2010001691A1 (en) | 2010-01-07 |
KR101598240B1 (en) | 2016-02-26 |
US8178279B2 (en) | 2012-05-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7482111B2 (en) | Negative radiation-sensitive resin composition | |
JP4677967B2 (en) | Radiation curable resist resin composition for glass etching and method for producing glass substrate using the same | |
JP4048791B2 (en) | Radiation sensitive resin composition | |
JP4655726B2 (en) | Negative radiation sensitive resin composition | |
JP4300847B2 (en) | Photosensitive resin film and cured film comprising the same | |
JP4765974B2 (en) | Negative radiation sensitive resin composition | |
JP5360059B2 (en) | Negative radiation sensitive resin composition | |
JP3832099B2 (en) | Bump forming material and wiring forming material | |
JP3575109B2 (en) | Bump forming material | |
JP2000039709A5 (en) | ||
JP5093226B2 (en) | Radiation sensitive resin composition | |
JP2009163080A (en) | Radiation-curable resist resin composition for glass etching and method for producing glass substrate using the same | |
EP1840654B1 (en) | Radiation-sensitive negative resin composition | |
JP2001290265A (en) | Radiation sensitive resin composition and photolithography using the same | |
JPH10319592A (en) | Radiation sensitive resin composition | |
JPH10161310A (en) | Radiation sensitive resin composition | |
JPH10161307A (en) | Radiation sensitive resin composition | |
JP2010026431A (en) | Negative radiation-sensitive resin composition |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120406 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130205 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130325 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130806 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130819 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5360059 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |