JP2008076313A - Tip for analysis, its manufacturing method, and apparatus and method for analysis - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To acquire a large amount of change in both absorbance changes in absorption peaks, results of measurement by Localized Surface Plasmon Resonance (LSPR), and shifts in absorbance peak wavelengths, results of measurement by interference spectroscopy. <P>SOLUTION: A tip 1 for analysis is provided with both a porous layer 3 in which a large number of pores 6 extending in directions in parallel with one another are arranged at approximately regular intervals and in which the pores 6 are open in one surface and a metal layer 5 formed on the opening surface 4 of the porous layer 3. The metal layer 5 is formed on the opening surface 4 of the porous layer 3 and pore wall surfaces in the vicinity of opening parts of the pores 6. The porous layer 3 is preferably an anode oxidation alumina coating. The metal layer 5 is constituted by layering an underlayer including at least one type selected from among Cr, Ti, and Ni and a surface layer including at least one type selected from among Au and Ag in this order. Metal particulates are absent in the pores 6. When the adsorption of matter to surfaces of the tip 1 for analysis irradiates light to the tip 1 for analysis, the light irradiation is observed as absorbance changes and wavelength shifts due to localized surface plasmon resonance and interference effects. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a novel analysis chip for detecting or quantifying a target substance in a sample, a manufacturing method thereof, an analysis apparatus, and an analysis method.

  In recent years, so-called biosensors that detect or quantify a target substance in a sample using a molecular recognition function of a biological substance have been actively developed. However, since a normal biosensor has a demerit that a biological substance must be labeled with an enzyme, a fluorescent substance, or the like, and the analysis operation is complicated, development of an analysis method that does not require labeling is desired.

  As a sensor that can be analyzed without labeling, a localized structure plasmon resonance (LSPR) is applied to a sensor unit that has a fine structure in which metal particles are fixed in layers on the surface of a dielectric or semiconductor. A sensor that measures the refractive index of a sample and quantifies a substance contained therein is known. In other words, the metal fine particle portion is irradiated with measurement light, and the intensity of the transmitted or reflected light is measured. However, since LSPR occurs at a specific wavelength and the scattering and absorption of light are remarkably increased, the intensity of light at that wavelength is increased. Remarkably reduced. It is known that the wavelength and intensity at which this LSPR occurs depends on the refractive index of the substance present around the metal fine particles, and the larger the refractive index, the longer the wavelength shifts and the greater the scattering and absorption. As a specific structure of a sensor using such an LSPR, for example, Patent Document 1 proposes a structure in which metal fine particles are fixed on a substrate surface in a state of a single layer film.

  By the way, in order to suppress the variation in peak change in the sensor unit having the structure described in Patent Document 1, it is important to uniformly control the variation in the shape and size of the metal fine particles and to fix the entire surface of the substrate without deviation. It becomes. However, in order to obtain fine metal fine particles having no variation in shape and size, there is a problem that an advanced manufacturing technique is required and the cost is increased. In addition, it is technically difficult to arrange metal fine particles uniformly over the entire surface of the substrate.

  Therefore, in Patent Document 2, a layered anodized alumina in which a plurality of independent pores are formed in a direction substantially perpendicular to the layer surface, and a metal formed by being filled with each of the independent pores of the anodized alumina and isolated from each other. It has been proposed to use a structure integrally including particles as a sensor using LSPR. Since the structure described in Patent Document 2 is formed by filling metal fine particles into the pores of anodized alumina whose diameter, interval, and depth can be controlled relatively freely, the metal fine particles can be produced in a uniform size, There is an advantage that the metal fine particles can be regularly arranged. This structure is prepared by depositing a metal on anodized alumina having a plurality of pores and then removing the metal adherend on the pore opening surface of the anodized alumina. Further, in Patent Document 3, a fine structure used for a sensor to which LSPR is applied is formed. The fine structure includes a layered substrate in which a plurality of fine holes are formed on one surface, and the substrate. The metal fine particles filled in the micropores and a metal thin film formed in the peripheral portion of the micropores on the one surface with a distance less than or equal to the diameter of the metal microparticles.

On the other hand, an analysis method using interference spectroscopy is also known as a method for detecting a target substance in a sample using specific binding of a biological substance. The analysis method using interferometry is a substance that measures the interference of reflected light by irradiating light to regular micropores such as an anodized alumina substrate. This utilizes the fact that the wavelength of the interference light shifts due to the interaction (bonding) between the substances occurring on the walls inside the pores, and the degree of this reflects the amount of binding. A sensor structure for analysis using such a principle has been proposed in Patent Documents 1 and 2, for example. For example, in Non-Patent Document 1, a porous silicon layer in which pores with a diameter of about 200 nm are regularly arranged is formed, and a DNA probe or the like immobilized inside the pores is used as a sensor. Further, improvement of Non-Patent Document 1 has also been attempted. For example, Non-Patent Document 2 proposes using porous aluminum oxide instead of porous silicon.
Japanese Unexamined Patent Publication No. 2000-356587 JP 2003-268592 A JP 2004-232027 A Science, Vol. 278, 840-843, 1997 Nano Lett., Vol. 3, No. 6, pp. 811-814, 2003

  However, the structure described in Patent Document 2 is easier to produce than the sensor unit of Patent Document 1, but requires a long time for vapor deposition for filling the independent pores of anodized alumina with metal. Moreover, the removal operation of the metal deposited on the opening surface after vapor deposition is complicated, and further simplification of the manufacturing process is required.

  In addition, it is possible to detect substances in samples from various information such as changes in absorbance at peak wavelengths as described in Patent Documents 1 and 2 and shifts in peak wavelength as described in Patent Documents 1 and 2. However, in order to obtain each piece of information, analysis must be performed using a dedicated analysis chip corresponding to each principle. Therefore, for example, when trying to analyze each event in a multifaceted manner based on a plurality of principles for the purpose of ensuring the accuracy of analysis, trying to use each analysis method causes a significant increase in cost. It will be.

  In addition, in the biosensor using LSPR described in Patent Documents 1 to 3 and the like, although it is known that not only the absorbance change of the peak wavelength but also the shift of the peak wavelength occurs due to the adsorption of the substance, the shift amount For example, quantitative analysis using the shift amount as an index is impossible. In addition, there are many noises, and it is difficult to obtain stable measurement results.

  The present invention has been proposed in view of such a conventional situation, and has a large change in both the absorbance change of the absorption peak as a measurement result by LSPR and the shift of the absorption peak wavelength as a measurement result by interferometry. An object of the present invention is to provide an analytical chip capable of obtaining an amount. Another object of the present invention is to provide a method for manufacturing an analysis chip that can manufacture the analysis chip relatively easily. Furthermore, an object of the present invention is to provide an analysis apparatus using the analysis chip.

  In order to achieve the above-mentioned object, the present inventors have made studies for a long time. As a result, it has been considered that it is necessary to regularly arrange fine metal particles isolated from each other as described in Patent Documents 1 and 2, etc., in order to detect the adsorption of a substance by utilizing the change in absorbance due to LSPR. However, it has an extremely simple structure in which a metal is deposited on both the opening surface of a porous layer such as an anodized alumina film having a high degree of regularity and the hole wall surface in the vicinity of the opening of the pore. However, a large change in absorbance can be obtained at a specific wavelength by LSPR, as well as a large light interference effect due to the regular porous structure. This light interference effect and LSPR are combined. As a result, the inventors have found that the amount of change in the wavelength shift is large, and have completed the present invention.

  That is, the analysis chip according to the present invention includes a porous layer in which a large number of pores extending in parallel directions are arranged at substantially equal intervals, and the pores are opened on one surface, and the opening of the porous layer. A metal layer formed on the surface, wherein the metal layer is formed on the opening surface of the porous layer and on the pore wall surface near the opening of the pore.

  When the absorption spectrum of the analysis chip as described above is measured, LSPR is generated due to the presence of the metal layer formed on the surface of the porous layer having the above-described structure and in the vicinity of the opening inside the pore. An absorption peak is observed at the wavelength, and the absorption peak increases when a substance is adsorbed or deposited near the metal layer. In particular, by providing a metal layer not only on the surface of the porous layer but also in the vicinity of the opening inside the pores of the porous layer, the amount of change in the absorption peak becomes large. From this, detection or quantification of a substance is realized using this change in absorbance as an index.

  In addition, the analysis chip of the present invention has a wavelength shift of the absorption peak as well as a change in absorbance of the absorption peak due to the structure of the porous layer in which pores extending in parallel directions are arranged at substantially equal intervals. The amount of change is also very large. That is, when, for example, a substance is adsorbed or deposited near the metal layer of the analysis chip of the present invention, the refractive index of light in the pores changes, and a shift in the absorption peak wavelength due to the light interference effect occurs. Substance detection or quantification is realized using this wavelength shift as an index.

  By using the analysis chip as described above, the absorption peak change amount and the wavelength shift change amount become very large due to the synergistic effect of the light interference effect and the LSPR as described above, and the sensitivity is high. Analysis is realized.

  Further, in the method for producing an analysis chip according to the present invention, after forming a porous layer in which a large number of pores extending in parallel directions are arranged at substantially equal intervals and the pores are open on one surface, A metal material is deposited from a direction inclined with respect to the pore wall surface of the pore, and a metal layer is formed on the opening surface of the porous layer and on the pore wall surface in the vicinity of the opening portion of the pore. To do.

  In the analytical chip manufacturing method as described above, the opening surface of the porous layer and the opening portion of the pore are formed by an easy operation such as applying a metal material from a direction inclined with respect to the pore wall surface of the pore. A metal layer can be formed on both the hole wall surface in the vicinity. At this time, the filling operation of the metal material into the pores and the removal operation of the metal layer formed on the opening surface are unnecessary, and the analysis chip is easily produced.

  Furthermore, the analysis apparatus according to the present invention is characterized by comprising the analysis chip, a light source, a detector, and a spectrometer. The analysis method according to the present invention is characterized by detecting or quantifying a target substance in a sample on the basis of both a change in absorbance and a wavelength shift due to localized plasmon resonance and interference effect, using the analyzer.

  When analyzing a substance in a sample using the analyzer as described above, light is irradiated from the light source to the aforementioned analysis chip, the reflected light is measured with a detector, and the spectrum is analyzed with a spectrometer. An absorption spectrum is obtained. Then, detection or quantification of a substance is realized from either the absorbance change of the absorption peak occurring at the specific wavelength or the wavelength shift. Therefore, by using the analysis apparatus using the analysis chip of the present invention, two types of analysis results are obtained, that is, analysis using the principle of LSPR and analysis using interference of light, thereby detecting a substance. Alternatively, quantitative analysis is realized.

  According to the analyzer using the analysis chip as described above, detection or quantification of a substance in a sample can be known from both the absorbance change of the absorption peak and the peak wavelength shift due to the interference effect of LSPR and light. In addition, the amount of change is remarkably large as compared with the case where a sensor having a conventional structure is used. That is, by performing an analysis using the analysis chip of the present invention, it is possible to realize a highly sensitive analysis as compared with existing analysis devices and sensors. In addition, when detecting or quantifying a substance, the user can arbitrarily select which result of absorbance change or peak wavelength shift of the absorption peak is used, and various analyzes are possible.

  In addition, according to the method for manufacturing an analysis chip as described above, an analysis chip capable of performing analysis based on a plurality of types of principles with one type of chip and realizing high-sensitivity analysis can be easily manufactured. Can do.

  Furthermore, according to the analyzer as described above, it is possible to obtain two types of information of absorbance change of absorption peak and peak wavelength shift in one analysis, and to perform multifaceted and highly sensitive analysis. Is possible.

  Hereinafter, an analysis chip and a manufacturing method thereof according to the present invention, an analysis apparatus using the analysis chip, and an analysis method using the analysis apparatus will be described in detail.

  First, the structure of the analysis chip of the present invention will be described. As shown in FIG. 1, the analysis chip 1 of the present invention includes a porous layer 3 formed on a substrate 2, a surface of an opening surface 4 of the porous layer 3, and a fine layer provided on the porous layer 3. And a metal layer 5 formed on both the hole wall surface near the opening of the hole 6.

  The porous layer 3 has a large number of pores 6 extending in directions parallel to each other. The surface of the porous layer 3 on the side where the pores 6 are opened is the opening surface 4. The pores 6 are arranged at substantially equal intervals, which makes it possible to increase the amount of change in wavelength shift using interferometry, and reliably support quantitative analysis using interferometry. It becomes possible. The surface shape of the opening surface 4 may be a concavo-convex shape that is recessed with each pore 6 as the center, or may be flat.

  It is desirable that the diameter and depth of the pores 6 of the porous layer 3 are substantially equal. Here, as for the diameter of the pore 6, it is desirable that the opening diameter measured by an atomic force microscope (AFM) is in the range of 40 nm to 80 nm. In addition, the depth of the pores 6 is determined from the absorption spectrum obtained by using the analysis chip and the average value of the absorbance of the absorption peak at each depth of the porous layer and the number of absorption peaks appearing in the measurement wavelength region. As a result of the examination, it is desirable that the depth is in the range of 0.5 to 3 μm. The specific dimensions of the pores 6 may be set as appropriate according to the material of the porous layer 3, the analysis target, and the like.

  The material constituting the porous layer 3 is not particularly limited. For example, a semiconductor such as Si, an insulator such as a resin or a metal oxide, or the like can be used. Among them, since the pores 6 have a honeycomb structure in which the pores 6 are arranged substantially perpendicular to the surface and parallel to each other at substantially equal intervals, the control of the diameter and depth of the pores 6 is relatively easy. Layer 3 is preferably formed of an anodized alumina coating.

  When the porous layer 3 is made of an anodized alumina film, the substrate 2 is made of aluminum. However, the whole base material 2 does not need to be comprised with aluminum, and aluminum should just exist in the surface of the base material 2 at least.

  The metal layer 5 of the present invention needs to be formed on the surface of the opening surface 4 of the porous layer 3. By arranging the metal layer 5 in this way, it is possible to obtain information on the change in absorbance at the peak wavelength due to localized plasmon resonance (LSPR) in one analysis using the analysis chip 1. . In the analysis chip 1 of the present invention, the metal layer 5 is formed not only on the surface of the opening surface 4 but also on the hole wall surface in the vicinity of the opening of the pore 6. Although it is possible to obtain the LSPR result only by the presence of the metal layer 5 on the surface of the opening surface 4, in order to obtain a stable and large effect, the hole wall surface near the opening of the pore 6 is also made of metal. It is important to cover with layer 5. Furthermore, by forming the metal layer 5 near the opening of the pore 6, the surface area of the metal layer 5 per chip can be increased compared to the case of only the surface of the opening 4, and the test substance It is possible to increase the immobilization density of biological components such as antibodies and nucleic acids that interact with.

  Although FIG. 1 shows a state in which the metal layer 5 covers the entire surface of the opening surface 4, the metal layer 5 only needs to exist on at least a part of the opening surface 4. There may be a region in which the porous layer 3 is exposed on the surface without being covered with.

  In the present invention, the material constituting the metal layer 5 is not present inside the pores 6 of the porous layer 3. Thereby, not only the result of LSPR but also the result of interference spectroscopy can be obtained reliably. On the other hand, if the inside of the pores 6 is filled with a metal material, the regularity of the porous layer 3 is lost, and the result using the interference spectroscopy cannot be obtained stably.

  As a material constituting the metal layer 5, a known metal material capable of obtaining LSPR can be used. Specifically, gold, silver, etc. are exemplified, and it is preferable that the metal layer 5 contains gold for reasons such as easy deposition and chemical stability.

  Although the metal layer 5 may be a single layer, for example, as shown in FIG. 2, two layers of a first metal layer 5a in contact with the porous layer 3 and a second metal layer 5b formed on the first metal layer 5a. It is good also as a structure. In particular, when the porous layer 3 is made of an anodized alumina film, the first metal layer 5a is preferably a chromium (Cr) layer and the second metal layer 5b is preferably a gold (Au) layer. In the analysis chip 1, the metal layer 5 is mainly provided on the outside of the pores 6, that is, on the surface of the opening surface 4 of the porous layer 3, and therefore, compared to the case where the pores 6 are filled with gold. It is a problem that is easy to peel off. On the other hand, the gold adhesion is enhanced by interposing the chromium layer (first metal layer 5a) between the porous layer 3 made of alumina and the gold layer (second metal layer 5b) made of gold. Peeling can be prevented. In addition to the above-mentioned chromium, titanium (Ti), nickel (Ni), or the like can be used for the first metal layer 5a serving as a base.

  When the analysis chip 1 is used as a biosensor using a molecular recognition function of a biological material, molecules for recognizing the analysis target substance in the sample are fixed on the surface of the metal layer 5. As a molecule fixed on the surface of the metal layer 5, for example, a known substance having a molecular recognition function such as an antibody, an antigen, a nucleic acid, a nucleic acid binding protein, a receptor, and a ligand can be used.

  Hereinafter, regarding the method for manufacturing the analysis chip 1 of the present invention, the porous layer 3 is made of an anodized alumina film, the metal layer 5 is made of chromium, the first metal layer 5a is made of gold, and the second metal layer 5b is made of gold. The analysis chip 1 having the two-layer structure will be described in detail as an example.

First, a base material 2 made of aluminum is prepared (FIG. 3A). An oxide film 11 made of alumina (Al ₂ O ₃ ) is usually formed on the surface of the base material 2 made of aluminum.

  Next, by performing a polishing process, the oxide film 11 formed on the surface of the substrate 2 is removed, and the substrate 2 made of aluminum is exposed (FIG. 3B). By this polishing step, large waviness existing on the surface of the substrate 2 is also flattened. Specifically, after mechanical polishing, electrolytic polishing is performed.

  Next, a porous layer 3 made of an anodized alumina film is formed by anodizing treatment. The porous layer 3 made of an anodized alumina film can be formed by a single anodic oxidation treatment. However, the diameter and depth of the pores 6 in the porous layer 3 are made uniform, and the pores 6 are formed. From the viewpoint of highly regular arrangement, it is preferable to perform the anodic oxidation treatment twice as described below.

  Specifically, first, the first anodic oxidation treatment is performed. The first anodic oxidation treatment is performed using, for example, an applied voltage of about 30 V to 50 V and an oxalic acid electrolyte. Thereby, the anodized alumina film 12 is formed on the surface of the base material 2 made of aluminum (FIG. 3C). The anodized alumina film 12 obtained here also forms a porous structure in a broad sense, but the shape of each hole 13 is a shape that expands inside, and its diameter and depth are not uniform. Further, the distribution and height of the unevenness on the surface of the anodized alumina film 12 are not uniform. Therefore, when the anodized alumina film 12 at this stage is used for an analysis chip, there is a risk that accurate measurement becomes difficult.

  Therefore, the anodized alumina film 12 obtained by the first anodizing treatment is removed by etching to expose the base material 2 made of aluminum, and the anodizing treatment is performed again, whereby a porous material made of the anodized alumina film is obtained. It is preferred to obtain layer 3.

  FIG. 3D shows a state after the anodized alumina film 12 obtained by the first anodizing treatment is removed. On the surface of the aluminum substrate 2 exposed at this stage, nano-order minute uneven patterns are regularly arranged. For the etching of the anodized alumina film 12, for example, phosphoric acid or chromic acid can be used.

  FIG. 3 (e) shows a state made of an anodized alumina film obtained after the second anodizing treatment. The second anodic oxidation treatment is performed using, for example, an applied voltage of about 30 V to 50 V and an oxalic acid electrolyte. Thereby, the porous layer 3 which consists of an anodized alumina membrane | film | coat is completed. Here, in the second anodic oxidation treatment, an anodized alumina film grows in a self-aligned manner in a substantially vertical direction on the main surface of the base material 2 based on a minute uneven pattern on the surface of the aluminum base material 2. Therefore, it is possible to form the porous layer 3 having uniform diameters and depths and having the pores 6 regularly arranged at equal intervals.

  After forming the porous layer 3 made of the anodized alumina film, a metal material is deposited on the opening surface 4 of the porous layer 3 to form the metal layer 5. At this time, the metal material is applied to the hole wall surface of the pore 6 from an oblique direction. The metal material can be deposited by vapor deposition, sputtering, or the like.

  The vapor deposition of the metal material can be realized using, for example, a vacuum vapor deposition apparatus 21 as shown in FIG. The vacuum deposition apparatus 21 is configured such that a deposition source containing a raw material 24 of the metal layer 5 is placed on a stage 23 in a vacuum vessel 22 and can support a plurality of chips 25 with the opening surface 4 facing downward. ing. Here, if the arrangement of the vapor deposition source 24 and the plurality of chips 25 arranged in a two-dimensional manner is appropriately set, the metal layer raw material 24 can be regarded as a dot shape with respect to the chips 25. In such a relationship, most of the evaporated metal material is incident on the pore wall surface of the porous layer 3 from an oblique direction. As a result, the aperture surface 4 of the porous layer 3 or the aperture surface 4 and the aperture surface 4 are fine. A metal material can be selectively and easily applied to the vicinity of the opening of the hole wall surface of the hole 6. The metal layer 5 formed on the opening surface 4 of the porous layer 3 is used as it is as the analysis chip 1 without being removed. As described above, the analysis chip 1 having the structure shown in FIG. 1 is completed.

Hereinafter, an analysis apparatus using the analysis chip 1 of the present invention will be described.
An analysis apparatus 31 shown in FIG. 5 receives an incident optical fiber 32 that is a light source for allowing the measurement light I to enter the surface of the analysis chip 1 on which the metal layer 5 is provided, and the reflected light R reflected from the analysis chip 1. A light source probe 34 including a reflected light detection fiber 33 that is a detector to detect, a tungsten halogen light source 35, a spectrophotometer 36 that splits light detected by the detector 33, and a spectrophotometer 36. And a computer 37 for processing the results. In the optical probe 34, a plurality of light sources 32 are arranged so as to surround the detector 33, and the detector 33 and the light source 32 are integrated.

  When detecting or quantifying a substance in a sample using the analyzer 31 as described above, the following is performed. First, molecules for recognizing a substance to be analyzed are fixed in advance on the surface of the metal layer 5 of the analysis chip 1. Next, the metal layer 5 of the analysis chip 1 and the sample solution are brought into contact with each other to be reacted. Thereafter, the reflected light R obtained by irradiating the measurement light I from the light source 32 is detected by the detector 33, and is spectrophotometered 36 to obtain an absorption spectrum.

  FIG. 6 is an example of an absorption spectrum obtained by the analyzer of the present invention. When a substance to be analyzed binds to a molecule fixed to the metal layer 5, the refractive index in the vicinity of the metal layer 5 changes, and as a result, in the obtained absorption spectrum, an absorption peak is obtained as a result of analysis using LSPR. Strength increases compared to before bonding. For this reason, substance detection is realized using this change in absorbance as an index. Further, in the obtained absorption spectrum, a wavelength shift is also observed before and after the binding of the analysis target substance as a result of analysis using interference spectroscopy. Since this wavelength shift amount is relatively large, it is possible to detect the analysis target substance using this as an index. Furthermore, since the absorbance change amount and the wavelength shift amount of the absorption peak according to the amount of the bound analyte substance can be obtained, the analyte substance can be quantified using any of these as an index. As described above, when the substance adsorbed on the surface of the analysis chip 1 used in the analysis device 31 is irradiated with light, the absorbance change and wavelength shift due to the local plasmon resonance and the interference effect Since it is observed, it becomes possible to detect and quantify the substance to be analyzed in the sample based on these two pieces of information.

  Examples of the present invention will be described below with reference to experimental results.

<Experiment 1: Preparation of analysis chip>
First, a 1 cm square aluminum base material was prepared and annealed at 480 ° C. for 40 minutes. Next, the oxide film on the surface of the base material was removed by mechanical polishing using a diamond suspension followed by electrolytic polishing. The electrolytic polishing was performed at 70 ° C. for 10 minutes with a current of 1.3 A. The acidic solution used in the electropolishing is a mixture of H ₃ PO ₄ , H ₂ SO ₄ and H ₂ O in a ratio of 8.5: 1: 0.5 and contains 35 g / L of CrO ₃ .

  Next, the first anodic oxidation treatment was performed. The anodizing treatment was performed at 10 ° C. for 10 to 100 minutes under an applied voltage of 40 V, and a 0.3 M oxalic acid solution was used.

Next, the anodized alumina film (Al ₂ O ₃ ) formed by the first anodic oxidation treatment was removed. For removal of the anodized alumina film, a solution containing H ₃ PO ₄ and H ₂ O at a ratio of 8: 2 with 50 g / L CrO ₃ added thereto was used. This exposed the aluminum substrate. On the surface of the aluminum substrate, minute irregularities having a height of about 7 nm were formed.

  Thereafter, a second anodic oxidation treatment was performed. The second anodic oxidation treatment was performed under the conditions of 10 ° C. and applied voltage of 40 V as in the first time, and a 0.3 M oxalic acid solution was used. As a result, a porous layer made of an anodized alumina film having a thickness of 3 μm was obtained.

  Here, with respect to the porous layer obtained after the second anodic oxidation treatment, the surface shape of the opening surface was observed with an atomic force microscope (AFM). The results are shown in FIG. Moreover, the expanded cross section in the AB line | wire in Fig.7 (a) is shown in FIG.7 (b). Further, the vicinity of the boundary between the opening surface and the side surface of the porous layer was observed with a scanning electron microscope (SEM). The results are shown in FIG.

  The pores of the anodized alumina film obtained by the two anodizing treatments were formed in the direction perpendicular to the film surface as shown in FIG. 8, and the diameter and depth were almost equal. Further, as shown in FIG. 7, it can be seen that the pores are regularly arranged at equal intervals. The diameter of each pore was 60 nm, and the cell size was 120 nm. Note that the pores depicted in FIG. 7, which is an AFM image, have a shape in which the opening area decreases as the depth increases, which is different from the pore shape in the SEM photograph shown in FIG. . This is presumably because the cantilever used for AFM observation was larger than the pore diameter, and the cantilever could not follow the inner surface of the pore.

  After forming a porous layer made of an anodized alumina film as described above, the opening surface of the porous layer is formed using a vacuum evaporation apparatus (Sanyu Electron, SVC-700TM / 700-2) as shown in FIG. A metal material was vacuum deposited thereon to form a metal layer. Specifically, 20 chips each having a porous layer were prepared, and the opening surface was directed downward, and the chip was set at a position where the evaporated metal was attached to the hole wall surface in an oblique direction. In order to prevent adhesion of the metal material, the inner wall of the vacuum vessel between the vapor deposition source and the chip support was covered with aluminum foil. Then, the inside of the vacuum vessel was depressurized and vapor deposition was performed. First, chromium (Cr) was vapor-deposited, and then gold (Au) was vapor-deposited. The tip was not moved during the deposition. As a result, a metal having a two-layer structure in which a chromium layer having a thickness of 5 nm and a gold layer having a thickness of 15 nm are laminated in this order on both the opening surface of the porous layer and in the vicinity of the opening portion of the pore wall surface. A layer was formed. Thus, the analysis chip was completed.

  After the metal layer was formed on the opening surface of the porous layer, the surface shape was observed with AFM. A result is shown to Fig.9 (a). Moreover, the expanded cross section in the AB line | wire in Fig.9 (a) is shown in FIG.9 (b). From FIG. 9, the metal layer is formed on the opening surface of the porous layer, and the diameter of the opening on the surface is 47 nm narrower than before the deposition (FIG. 7B), It can be seen that the metal material is deposited not only on the opening surface of the porous layer but also on the hole wall surface in the vicinity of the opening.

<Experiment 2: Examination of presence or absence of metal layer>
Next, the analysis solution produced as described above was used in an analyzer as shown in FIG. 5 to analyze the glucose solution. The film thickness of the porous layer in the analysis chip was 3 μm.

  First, a 0-10 mg / mL glucose solution was prepared. Glucose was obtained in the form of a dry powder, and was dissolved in 18.3 MΩ and pH 7.4 ultrapure water (Millipore). Next, the glucose solution was analyzed. Specifically, after the 0-10 mg / mL glucose solution prepared with ultrapure water was placed on the surface of the chip for analysis, 5 minutes later, the absorption spectrum for the change in glucose concentration remained immersed in the solution. Changes were observed. The obtained absorption spectrum is shown in FIG. In addition, as a comparison, the change in absorption spectrum with respect to the change in glucose concentration was performed in the same manner as in the case with the metal layer using only the analysis chip at the stage before forming the metal layer, that is, the porous layer made of the anodized alumina film. Was observed. The results are shown in FIG. Further, FIG. 12A shows the relationship between the glucose concentration and the change in absorbance grasped from FIGS. 10 and 11, and FIG. 12B shows the relationship between the glucose concentration and the change in wavelength shift.

  From FIG. 12, when an analysis chip without a metal layer (before gold (Au) deposition) was used, no change in absorbance due to glucose adsorption was observed. Although a wavelength shift was observed, the amount of change was slight. On the other hand, by using the analysis chip of the present invention (after gold (Au) deposition), both wavelength shift and absorbance change are observed due to glucose adsorption, compared to the case without a metal layer. These changes have also increased significantly. From the above results, it was confirmed that the non-specific adsorption of glucose can be detected by the analyzer using the analysis chip of the present invention using both the wavelength shift and the absorbance change as indices.

<Experiment 3: DNA detection>
In this experiment, an attempt was made to detect probe DNA in a sample using the analysis chip of the present invention. First, prior to the experiment, the relationship between the thickness of the porous layer and the change in absorbance was examined.

  When the second anodic oxidation treatment is performed, the thickness of the porous layer is changed to 0.5 μm, 1 μm, 2 μm, 3 μm, 4 μm, and 5 μm by changing the anodizing time from 10 to 100 minutes. I let you. Otherwise, the analysis chip was prepared in the same manner as in Experiment 1. An absorption spectrum obtained using the obtained analysis chip is shown in FIG. FIG. 13 shows the result after forming the metal layer. Moreover, from the absorption spectrum in FIG. 13, the average value of the absorbance of the absorption peak at each thickness of the porous layer and the number of absorption peaks appearing in the measurement wavelength region were examined. The results are shown in FIG. From FIG. 13 and FIG. 14, the average value of the absorbance at the peak showed a tendency to gradually decrease by increasing the film thickness of the porous layer. From this result, in the following experiment, 3 μm, from which an appropriate number of peaks and absorbance intensity were obtained, was mainly set as the thickness of the porous layer.

  Next, the probe DNA was immobilized on the metal layer, and changes when complementary DNA, mismatched DNA, or the like was allowed to act on this were examined. First, DNA having a thiol group at the 5 ′ end is prepared as a probe DNA, dissolved in TE buffer (10 mM Tris, 1 mM EDTA, pH 7.4), and reacted with the analysis chip of the present invention. Probe DNA was immobilized on the surface of the layer.

  Next, only TE buffer, TE buffer containing mismatched DNA, and TE buffer containing complementary DNA were prepared, and these were brought into contact with a probe DNA-immobilized analysis chip as a sample solution and hybridized. After the reaction, an absorption spectrum was measured. In addition, various sample solutions were applied to the analysis chip having only the porous layer before gold deposition and the analysis chip (without probe DNA) after gold deposition, and the absorption spectrum was measured. Analytical chips with a porous layer thickness of 0.5 μm, 1 μm, 2 μm, 3 μm, 4 μm, and 5 μm were examined. As a representative, FIG. 15 shows the results when an analysis chip having a porous layer thickness of 3 μm is used.

  FIG. 16A shows the relationship between the thickness of the porous layer and the change in absorbance after the probe DNA is immobilized on the metal layer or after binding of complementary DNA. FIG. 16B shows the relationship with the wavelength shift after the probe DNA is immobilized or after complementary DNA is bound. The probe DNA and target DNA used in this experiment were obtained in a dry powder state and dissolved in TE buffer (10 mM Tris, 1 mM EDTA, pH 7.4). The base sequence of each DNA is shown in Table 1 below.

  As shown in FIGS. 16 (a) and 16 (b), when complementary DNA is bound, even if the thickness of the porous layer increases, the absorbance change amount and the wavelength shift amount are almost independent of the porous layer thickness. It was constant. If the entire surface of the porous layer including the opening surface and the pore wall surface of the porous layer is covered with a metal layer, it is formed on the pore wall surface when the porous layer thickness (pore depth) is different. Since the thickness of the metal layer to be changed also changes, it is considered that the amount of change in absorbance and the amount of wavelength shift differ depending on the thickness of the porous layer. However, in practice, as shown in FIGS. 16A and 16B, the amount of change in absorbance and the amount of wavelength shift were almost constant regardless of the porous layer thickness. From this, it is considered that the metal material hardly enters the inside of the pores and remains in the vicinity of the opening surface of the porous layer and the opening of the hole wall surface.

  Next, a sample solution having a target DNA (complementary DNA) concentration of 1 fM to 100 μM was prepared, and an absorption spectrum was measured by an analyzer using an analysis chip on which the probe DNA was immobilized. The absorption spectrum was measured in the same manner for an untreated analytical chip in which the probe DNA was not immobilized and an analytical chip in which the probe DNA was immobilized but not in contact with the sample solution. The results are shown in FIG. FIG. 18A shows the relationship between the DNA concentration in the sample solution and the change in absorbance, and FIG. 18B shows the relationship between the DNA concentration in the sample solution and the wavelength shift.

  From FIG. 18 (a), the DNA concentration in the sample solution and the change in absorbance were in a linear relationship within a DNA concentration range of 10 pM to 10 μM. Further, from FIG. 18B, the DNA concentration and the wavelength shift in the sample solution were also linearly related within the DNA concentration range of 10 pM to 10 μM, similar to the change in absorbance. From this result, it was found that the quantitative analysis of the analysis target substance in the sample is possible by obtaining the relationship between any one of the absorbance change and the wavelength shift and the analysis target substance concentration in advance. In addition, it was found that the same result could be obtained regardless of whether the absorbance change or the wavelength shift was used as an index, and an accurate quantitative analysis was possible. Furthermore, it was confirmed that a highly sensitive analysis of 10 pM is possible by the analyzer using the analysis chip of the present invention.

It is a schematic sectional drawing which shows an example of the chip | tip for analysis of this invention. It is sectional drawing which expands and shows the metal layer vicinity of the chip | tip for analysis shown in FIG. It is a figure for demonstrating an example of the manufacturing method of the chip | tip for analysis of this invention, (a) is the base material 2, (b) is a grinding | polishing process, (c) is the 1st anodic oxidation process, (d) is a figure. Etching step, (e) shows the second anodic oxidation step. In each figure, the upper part is a surface image by AFM, and the lower part is a schematic sectional view. It is a schematic diagram which shows an example of the vapor deposition apparatus used for formation of a metal layer. It is a schematic diagram which shows an example of the analyzer of this invention. It is an example of the absorption spectrum obtained by the analyzer of this invention, and is a figure which shows the state before and behind adsorption | suction of the substance to the metal layer vicinity. The result of observing the surface shape of the opening surface of the porous layer (thickness 3 μm) obtained after the second anodic oxidation treatment with AFM is shown, (a) is a three-dimensional image of the surface shape, b) is a sectional view taken along line AB in (a). (A) is the SEM photograph about the porous layer (thickness 3 micrometers) obtained after the 2nd anodizing process, (b) is the SEM photograph which expanded the pore vicinity in (a). The analysis chip obtained by vapor-depositing gold (Au) on the porous layer shows the result of observing the surface shape on the opening side with AFM, and (a) is a three-dimensional image of the surface shape. (B) is sectional drawing in the AB line | wire in (a). (A) is an absorption spectrum obtained by analyzing a glucose solution using the analysis chip of the present invention, and (b) is an enlarged view of wavelengths from 800 nm to 845 nm in the absorption spectrum shown in (a). (A) is an absorption spectrum obtained by analyzing a glucose solution using an analysis chip without a metal layer, and (b) is an enlarged view of wavelengths 805 nm to 835 nm in the absorption spectrum shown in (a). . (A) is a figure which shows the relationship between glucose concentration and a light absorbency change amount, (b) is a figure which shows the relationship between a glucose concentration and a wavelength shift change amount. It is an absorption spectrum obtained when the analysis chip of the present invention is used and the film thickness of the porous layer is varied. It is a figure which shows the relationship between the film thickness of a porous layer, and the average value of an absorption peak, and the relationship between the film thickness of a porous layer, and the number of absorption peaks which appeared in wavelength 400nm -850nm. It is an absorption spectrum obtained by analyzing after hybridization of complementary DNA or mismatched DNA to probe DNA using an analysis chip having a porous layer with a thickness of 3 μm. (A) is a figure which shows the relationship between the film thickness of a porous layer, and the light absorbency change after the fixation | immobilization of probe DNA to a metal layer, or after the binding of complementary DNA, (b) is a film thickness of a porous layer. It is a figure which shows the relationship between the wavelength shift after fixation of probe DNA to a metal layer, or after complementary DNA coupling | bonding. (A) is an absorption spectrum obtained by measuring sample DNA solutions of various concentrations using the analysis chip of the present invention, and (b) is an expansion of wavelengths from 800 nm to 840 nm in the absorption spectrum shown in (a). FIG. (A) is a figure which shows the relationship between a target DNA density | concentration and an absorbance change, (b) is a figure which shows the relationship between a target DNA density | concentration and a wavelength shift.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Analysis chip | tip, 2 Base material, 3 Porous layer, 4 Opening surface, 5 Metal layer, 6 Pore, 11 Oxide film, 12 Anodized alumina film | membrane, 13 Hole, 21 Deposition apparatus, 22 Vacuum vessel, 23 Stage, 24 deposition source, 25 chip, 31 analyzer, 32 incident optical fiber, 33 reflected light detection fiber, 34 optical probe, 35 tungsten halogen light source, 36 spectrophotometer

Claims (12)

  A plurality of pores extending in a direction parallel to each other are arranged at substantially equal intervals, and the porous layer includes a porous layer having one surface open and a metal layer formed on the opening surface of the porous layer. The analysis chip, wherein the metal layer is formed on an opening surface of the porous layer and a hole wall surface in the vicinity of the opening of the pore.   The analysis chip according to claim 1, wherein the porous layer is an anodized alumina film.   The anodized alumina film is formed by performing anodization of aluminum, etching for removing the anodized film formed by the anodization, and anodization of aluminum exposed by the etching in this order. The analysis chip according to claim 2, wherein the analysis chip is provided.   The metal layer is formed by laminating an underlayer containing at least one selected from Cr, Ti, and Ni and a surface layer containing at least one selected from Au and Ag in this order. The analysis chip according to claim 1.   The analysis chip according to any one of claims 1 to 4, wherein metal fine particles are not present inside the pores.   6. Adsorption of a substance on the surface of the analysis chip is observed as a change in absorbance and a wavelength shift due to localized plasmon resonance and interference effect when the analysis chip is irradiated with light. The analysis chip according to any one of the above.   After forming a porous layer in which a large number of pores extending in directions parallel to each other are arranged at substantially equal intervals, and the pores are open on one side, the metal is tilted with respect to the pore wall surface of the pores. A method for producing an analytical chip, comprising depositing a material and forming a metal layer on an opening surface of the porous layer and on a hole wall surface in the vicinity of the opening of the pore.   8. The method for producing an analytical chip according to claim 7, wherein the porous layer is formed by anodization of aluminum.   The porous layer is formed by performing anodization of aluminum, etching for removing the anodized film formed by the anodization, and anodization of aluminum exposed by the etching in this order. The manufacturing method of the chip | tip for analysis of Claim 8.   The underlayer including at least one selected from Cr, Ti, and Ni and the surface layer including at least one selected from Au and Ag are stacked in this order as the metal layer. The manufacturing method of the analysis chip | tip of any one of -9.   An analysis device comprising the analysis chip according to claim 1, a light source, a detector, and a spectrometer.   12. An analysis method comprising detecting or quantifying a target substance in a sample based on both a change in absorbance and a wavelength shift due to localized plasmon resonance and interference effect, using the analyzer according to claim 11.

Images