JP2008072136A - Method for manufacturing semiconductor radiation detector - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method that can manufacture a semiconductor radiation detector at low cost, the detector being excellent in radiation detection performance, ensuring satisfactory strength, and facilitating a larger area. <P>SOLUTION: An arsenic coating layer 12 is formed by decomposing GaAs powder or the GaAs crystal to put As on an Si substrate 11, while the N-type Si substrate 11 of a low resistance is placed in the high temperature reduction atmosphere. A P-type CdTe growth layer 13 of a high-resistance is formed by the MOVPE method on the Si substrate 11 on which the arsenic coating layer 12 is formed. An electrode 16 and the common electrode 17 are formed on the surface of the CdTe growth layer 13 and the backside of the Si substrate 11, respectively. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a semiconductor radiation detector used in medical radiation diagnostic apparatuses, industrial X-ray inspection apparatuses, scientific X-ray analysis apparatuses, and the like.

Conventionally, as this type of semiconductor radiation detector, a high-resistance bulk crystal of cadmium telluride (hereinafter referred to as CdTe) or zinc cadmium telluride (hereinafter referred to as CdZnTe), which is excellent as a radiation detection material, has been used. Yes. For this high-resistance bulk crystal of CdTe, it is difficult to obtain a large-area crystal having uniform and good electrical characteristics. Therefore, usually, a single element having a small volume, for example, about 1 × 1 × 1 mm ³ , or a few Ten small-scale array type radiation detectors have been put into practical use. However, even if such a bulk crystal is used, it has been technically problematic to realize a large-area radiation detector that can cover the entire chest of a human body, and has become very expensive. Further, in the case of a conventional radiation detector using a high-resistance bulk crystal of CdTe, conductive electrodes or Schottky electrodes are formed on the front and back surfaces of the crystal, and a high voltage of several hundred to 1000 v is applied between the electrodes, Carriers generated by radiation are extracted by an electric field and detected as an electrical signal. Therefore, in this type of radiation detector using a high-resistance bulk crystal of CdTe, there is little room for improving detection characteristics other than the resistance of the element.

On the other hand, as shown in Patent Document 1, a semiconductor radiation detector having one heterojunction between a compound semiconductor crystal such as CdTe and a crystalline thin film such as InAs is known. However, in this semiconductor radiation detector, the compound semiconductor crystal is used as an active region (active layer) for generating carriers, and the crystalline thin film layer has a function of efficiently injecting carriers from the compound semiconductor crystal into the metal electrode. Is. Therefore, when the compound semiconductor crystal is a II-VI group crystal such as CdTe, it is very difficult to obtain a large-area crystal as described above, and the semiconductor radiation detector becomes very expensive. is there. Further, when the compound semiconductor crystal is a crystal other than CdTe or CdZnTe, there is a problem that radiation detection characteristics are insufficient.
JP-A 64-89471

Further, as shown in Patent Document 2, radiation detection comprising a semi-insulating semiconductor crystal such as CdTe, P-type P-HgCdTe epitaxially grown on one side thereof, and N-type N-HgCdTe epitaxially grown on the other side. The vessel is known. However, similar to the semiconductor radiation detector described in Patent Document 1, this semiconductor radiation detector uses a semi-insulating semiconductor crystal such as CdTe as an active region for generating carriers. There is.
JP-A-6-120549

  The present invention is intended to solve such a problem, and provides a manufacturing method capable of manufacturing a semiconductor radiation detector with good radiation detection performance, sufficient strength and easy to make a large area at low cost. The purpose is to provide.

  In order to achieve the above object, the present invention is characterized in that a semiconductor radiation detector is manufactured by forming a CdTe or CdZnTe growth layer on the surface of a Si substrate by MOVPE, and using the growth layer as an active layer for incident radiation. A method in which a GaAs powder is decomposed to deposit arsenic on a Si substrate while the Si substrate is placed in a high-temperature reducing atmosphere, and a CdTe or CdZnTe growth layer is deposited on the Si substrate on which arsenic is deposited. Are to be laminated.

  In the present invention, arsenic is divalent rather than tetravalent by thermally decomposing GaAs powder or GaAs crystal and placing arsenic on the Si substrate while the Si substrate is placed in a high temperature reducing atmosphere. Can be deposited on the substrate. Thereafter, when CdTe or CdZnTe is grown on the Si substrate to which arsenic is adhered by the MOVPE method, the Si substrate and the CdTe or CdZnTe growth layer can be laminated with a strong adhesive force through divalent arsenic. Therefore, according to the present invention, it has become possible to form a CdTe growth layer on a Si substrate while ensuring sufficient adhesive strength and good crystallinity by the MOVPE method, which has been very difficult in the past. In the present invention, since a Si substrate having a large area and a strong substrate can be obtained at low cost, a CdTe or CdZnTe growth layer is laminated on the surface of the Si substrate by the MOVPE method. The semiconductor radiation detector provided with can be obtained at low cost.

  When the Si substrate is a low resistance N-type and the CdTe or CdZnTe growth layer is a high resistance P-type, the CdTe or CdZnTe growth layer is laminated on the Si substrate with a strong adhesive force by the above manufacturing method. A semiconductor radiation detector having a large area and sufficient strength can be obtained at low cost.

  Further, a structure having a low resistance N-type thin CdTe or CdZnTe intermediate growth layer between a low resistance N-type Si substrate and a high resistance P-type CdTe or CdZnTe growth layer. However, according to the manufacturing method described above, a low-resistance N-type intermediate growth layer can be stacked on the Si substrate with a strong adhesive force through divalent arsenic. Note that the thickness of the intermediate growth layer is about 0.02 to 0.05 mm, and so on. As a result, in the present invention, a high resistance P-type CdTe or CdZnTe growth layer is laminated on the Si substrate surface having sufficient strength via the intermediate growth layer by the MOVPE method. Therefore, a good radiation detection performance can be obtained by this growth layer. In the present invention, by applying a reverse bias to the semiconductor radiation detector, carriers generated in the P-type active layer due to the incidence of radiation can be efficiently extracted by the PN junction. Furthermore, in the present invention, by providing a thin N-type intermediate growth layer with low resistance, the occurrence of damage in the PN junction is suppressed in the intermediate growth layer, and the crystallinity of the CdTe or CdZnTe growth layer is ensured well. Therefore, the collection efficiency of carriers generated in the active layer by the PN junction is increased.

  The above manufacturing method also applies to a structure in which the Si substrate is a low-resistance P-type, and the CdTe or CdZnTe growth layer has a high-resistance P-type layer on the Si substrate side and a low-resistance N-type layer on the surface side laminated. Thus, a high-resistance P-type layer that is a CdTe or CdZnTe growth layer can be laminated on a low-resistance P-type Si substrate with a strong adhesive force. Thus, in the present invention, a high resistance P-type and a low resistance N-type CdTe or CdZnTe growth layer is laminated on the surface of a sufficiently strong Si substrate by the MOVPE method. And a good radiation detection performance can be obtained. Further, by applying a reverse bias to the semiconductor radiation detector, carriers generated in the P-type active layer due to the incidence of radiation can be efficiently extracted by a PN junction with the low-resistance N-type layer.

  Further, a thin CdTe or CdZnTe intermediate growth layer which is a low resistance P type containing arsenic is provided between a low resistance P type Si substrate and a high and low resistance P type CdTe or CdZnTe growth layer. With regard to the structure, a low-resistance P-type growth layer containing arsenic can be laminated on the low-resistance P-type Si substrate with a strong adhesive force by the above manufacturing method. Further, according to the present invention, defects generated at the boundary with the Si substrate can be suppressed by the thin P-type CdTe growth layer, and the radiation characteristics of the high-resistance CdTe growth layer can be enhanced.

  For a semiconductor radiation detector having a Schottky electrode instead of the N-type layer, a CdTe growth layer can be formed while ensuring sufficient adhesive strength and good crystallinity by the above manufacturing method. It was made. Thus, carriers generated in the P-type active layer by the incidence of radiation can be efficiently extracted by the Schottky junction between the Schottky electrode and the P-type layer.

  In addition, a semiconductor radiation detector manufacturing method in which a groove reaching the Si substrate from the growth layer side is provided by a cutting means and separated into a number of two-dimensionally arranged unit elements. It was possible to form a CdTe growth layer while ensuring good adhesive strength and good crystallinity. As the cutting means, laser cutting, dry etching, dicing or the like is used. Thereby, a semiconductor radiation detector having a large area composed of a large number of unit elements arranged two-dimensionally can be easily realized.

  In addition, a semiconductor radiation detector provided with a number of surface electrodes or Schottky electrodes arranged two-dimensionally on the surface on the growth layer side and with a guard ring electrode surrounding the surface electrode or Schottky electrode is also described above. The production method made it possible to form a CdTe growth layer while ensuring sufficient adhesive strength and good crystallinity. As a result, a semiconductor radiation detector having a large area composed of a large number of two-dimensionally arranged elements can be easily realized without providing a groove on the surface side of the semiconductor radiation detector with a cutting means to separate the elements. Can do.

  Further, the low resistance growth layer on the surface side is divided into a plurality of small regions and arranged two-dimensionally, and the small region or the small region that is a Schottky electrode has a main small region at a predetermined position and a main small region. A semiconductor radiation detector configured to apply a high voltage to a plurality of peripheral small regions surrounding the CdTe growth by the above manufacturing method while ensuring sufficient adhesive strength and good crystallinity. It was possible to form a layer. Thereby, even if it does not provide a groove on the surface side of the semiconductor radiation detector with a cutting means to separate the elements, the semiconductor radiation detector is composed of a number of elements arranged two-dimensionally by electrode processing only on the surface side. Can be realized easily.

  In the present invention, a CdTe or CdZnTe growth layer can be firmly laminated on the Si substrate by the MOVPE method by thermally decomposing GaAs powder or GaAs crystal on the Si substrate surface to adhere divalent arsenic. . Therefore, according to the present invention, it has become possible to form a CdTe growth layer on a Si substrate while ensuring sufficient adhesive strength and good crystallinity by the MOVPE method, which has been very difficult in the past. In addition, since a Si substrate having a large area and a strong substrate can be obtained at low cost, a large area and strong semiconductor radiation detector can be inexpensively formed by laminating a CdTe or CdZnTe growth layer on the surface thereof by the MOVPE method. can get.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 shows a semiconductor including a high-resistance P-type CdTe growth layer 13 formed by MOVPE on the surface of a low-resistance N-type silicon substrate 11 (hereinafter referred to as an Si substrate) according to the first embodiment. The radiation detector 10 is shown by the perspective view. FIGS. 2-1 to 5 schematically show manufacturing steps of the semiconductor radiation detector in cross-sectional views.

  The semiconductor radiation detector 10 includes a low-resistance N-type Si substrate 11, an arsenic coating layer 12 formed on the Si substrate 11, and a high-resistance P-type CdTe growth layer formed thereon by MOVPE. 13 is separated into a number of planar elements having a heterojunction structure two-dimensionally arranged by separation grooves 15 reaching the Si substrate 11 from the surface of the CdTe growth layer 13, and the surface-side electrode 16 and the substrate rear surface side Common electrode 17 is provided. As shown in FIG. 2-5, the semiconductor radiation detector 10 is connected to a semiconductor circuit board 19 on which, for example, a control LSI is mounted by a surface side electrode 16. Hereinafter, the manufacturing process of the semiconductor radiation detector 10 will be described with reference to FIGS.

  In the Si substrate 11, the crystal plane direction is important in matching with the CdTe growth layer 13, the crystal plane (211) is most preferable, and the crystal plane (100) is also good. However, other crystal planes can be used. The Si substrate 11 can have a large diameter of about 12 inches, has sufficient strength, and is easy to handle. Therefore, by using the Si substrate 11, it is possible to manufacture a semiconductor radiation detector having a very large area. The Si substrate 11 is heat-treated in a hydrogen reducing atmosphere at 900 to 1000 ° C., and the surface is cleaned. The Si substrate 11 is thermally decomposed with gallium arsenide powder (hereinafter referred to as GaAs) or GaAs crystal in an atmosphere of 700 to 900 ° C. to cover about one molecular layer of arsenic molecules to form an arsenic coating layer 12. (See FIG. 2-1.)

  Next, on the Si substrate 11 on which the arsenic coating layer 12 is formed, a high resistance P-type CdTe growth layer 13 of about 0.2 to 0.5 mm is formed by an MOVPE method in an atmosphere of about 450 to 500 ° C. It is formed with a film thickness (see FIG. 2-2). As a raw material for cadmium, for example, dimethylcadmium is used, and as a raw material for tellurium, for example, diethyl tellurium is used. As the P-type dopant, for example, tertiary butylarsine is used. The CdTe growth layer 13 formed in this way is formed as an active layer by closely adhering to the Si substrate 11 because the divalent arsenic coating layer 12 is formed on the Si substrate 11.

  Next, on the surface of the CdTe growth layer 13, the surface-side electrode 16 for providing a large number of unit elements having a small area of about 1 mm □ arranged two-dimensionally is formed by a sputtering method and a lithography method. Further, the common electrode 17 is formed on the back side of the Si substrate 11 by sputtering or the like (see FIG. 2-3). As the electrode material, Au, Sb—Au, In—Au, W—Au, Ti—Pt—Au, or the like is used. Further, a separation groove 15 extending from the surface side of the CdTe growth layer 13 along the gap between the electrodes 16 into the Si substrate 11 is formed by a laser cutting method (see FIG. 2-4). Thereby, the semiconductor radiation detector 10 separated into a large number of unit elements and arranged two-dimensionally is obtained. The semiconductor radiation detector 10 is bonded by an electrode 16 to a semiconductor circuit substrate 19 on which a signal processing LSI is formed on a part of an electrode wiring substrate, for example (see FIG. 2-5).

  As described above, in the first embodiment, the semiconductor radiation detector 10 has a good crystal structure because the CdTe growth layer 13 is laminated on the surface of the Si substrate 11 having sufficient strength by the MOVPE method. A growth layer having properties is obtained. Therefore, good radiation detection performance is obtained by this growth layer. Furthermore, in the first embodiment, the Si substrate 11 is placed in a high-temperature reducing atmosphere, and the GaAs powder or crystal is decomposed to deposit arsenic on the Si substrate 11 so that it is divalent instead of tetravalent. The arsenic coating layer 12 can be provided in the form of Therefore, when CdTe is grown on the Si substrate 11 to which arsenic is adhered by the MOVPE method, the CdTe growth layer 13 is laminated on the Si substrate 11 with a strong adhesive force via the arsenic coating layer 12 made of divalent arsenic. be able to. As a result, in this embodiment, the formation of the CdTe growth layer 13 on the Si substrate 11 by the MOVPE method, which has been very difficult in the past, is performed in a stable manner while ensuring sufficient adhesive strength and good crystallinity. Could be achieved.

  In addition, since a Si substrate 11 having a large area and a strong substrate can be obtained at low cost, a semiconductor radiation detection having a large area and sufficient strength can be achieved by laminating a CdTe or CdZnTe growth layer on the surface thereof by the MOVPE method. A vessel can be obtained at low cost. Further, by providing the semiconductor radiation detector 10 with a groove 15 reaching the Si substrate 11 from the growth layer side by a laser cutting method, a semiconductor radiation detector having a large area in a two-dimensional array separated into a large number of unit elements. Provided simply and inexpensively.

Next, a modification of the first embodiment will be described.
As shown in FIG. 3, the semiconductor radiation detector 10A according to the modified example is a low-resistance N-type CdTe intermediate growth layer after the arsenic coating layer 12 is provided on the low-resistance N-type Si substrate 11. 14 and a high-resistance P-type CdTe growth layer 13 is further provided. Similarly to the P-type CdTe growth layer 13, the N-type CdTe intermediate growth layer 14 can also be formed by replacing the dopant with iodine by the MOVPE method. The thickness of the N-type CdTe intermediate growth layer 14 is a thin layer of about 0.02 to 0.05 mm, and the P-type CdTe growth layer 13 is the same as in the first embodiment. As described above, according to the modification, by providing the thin N-type intermediate growth layer 14 with low resistance, occurrence of damage in the PN junction is suppressed by the intermediate growth layer 14 and the crystallinity of the CdTe growth layer 13 is improved. Since it is ensured satisfactorily, the collection efficiency of carriers generated in the CdTe growth layer 13 by the PN junction is increased.

Next, a second embodiment will be described.
As shown in FIG. 4, in the semiconductor radiation detector 20 of the second embodiment, after the arsenic coating layer 12 is provided on the low-resistance P-type Si substrate 21, the high-resistance P-type CdTe is grown. A layer 22 is provided, and a low-resistance N-type CdTe growth layer 23 is further provided. The CdTe growth layer 23 is formed by the MOVPE method by replacing the dopant with iodine as described above. The P-type CdTe growth layer 22 has the same thickness as the CdTe growth layer 13. The thickness of the N-type CdTe growth layer 23 is a thin layer of about 0.02 to 0.05 mm.

  According to this embodiment, in addition to the effects of the first embodiment, a reverse bias is applied to the semiconductor radiation detector 20 to generate a P-type CdTe growth layer 22 as an active layer by the incidence of radiation. Carriers can be efficiently extracted by a PN junction with the low-resistance N-type growth layer 23. Also in the second embodiment, as in the first embodiment, there are obtained effects that a semiconductor radiation detector having a large area and sufficient strength can be obtained at low cost.

Next, Modification 1 of the second embodiment will be described.
As shown in FIG. 5, in the semiconductor radiation detector 20A of the first modification, after the arsenic coating layer 12 is provided on the low-resistance P-type Si substrate 21, the CdTe growth layer that is the low-resistance P-type is provided. 24, a high-resistance P-type CdTe growth layer 22 is provided, and a low-resistance N-type CdTe growth layer 23 is stacked thereon. The CdTe growth layers 23 and 24 are both formed by the MOVPE method by replacing the dopant with iodine and arsenic as described above. The P-type CdTe growth layer 22 and the N-type CdTe growth layer 23 have the same thickness as the CdTe growth layers 22 and 23 of the second embodiment. The P-type CdTe growth layer 24 is a thin film having a thickness of about 0.02 to 0.05 mm. Thereby, in the first modification, in addition to the effect of the second embodiment, defects generated at the boundary with the Si substrate 21 can be suppressed by the thin P-type CdTe growth layer 24, and the high-resistance CdTe can be suppressed. The radiation resistance characteristics of the growth layer 22 can be enhanced.

Next, a second modification of the second embodiment will be described.
As shown in FIG. 6, the semiconductor radiation detector 20 </ b> B of Modification 2 is provided with a Schottky electrode 26 instead of the low-resistance N-type CdTe growth layer 23 in the semiconductor radiation detector 20 of the second embodiment. Is. As a material for the Schottky electrode 26, for example, gold alone is used. As a result, similarly to the PN junction of the second embodiment, carriers generated in the CdTe growth layer 22 which is an active layer by the incidence of radiation are efficiently extracted by the Schottky junction between the Schottky electrode 26 and the CdTe growth layer 22. be able to. Further, in the semiconductor radiation detector 20A of the first modification, the same effect can be obtained by providing a Schottky electrode in place of the low-resistance N-type CdTe growth layer 23.

Next, a third embodiment will be described.
As shown in FIG. 7, the semiconductor radiation detector 31 of the third embodiment is provided with a number of surface electrodes 32a arranged two-dimensionally on the surface side of the semiconductor radiation detector and surrounds the periphery of the surface electrode 32a. An electrode 32b is provided. That is, instead of providing the separation groove 15 extending into the Si substrate 11 on the surface side of the CdTe growth layer 13 shown in the first embodiment, the semiconductor radiation detection separated into a number of unit elements by the guard ring electrode 32b. A container 31 is obtained. Thereby, since the trouble of providing a groove on the surface side of the semiconductor radiation detector 31 is omitted, a semiconductor radiation detector comprising a large number of two-dimensionally arranged elements is provided at low cost.

Next, a fourth embodiment will be described.
In the semiconductor radiation detector 34 of the fourth embodiment, as shown in FIG. 8, a high-resistance CdTe growth layer 36 is formed on a high-resistance Si substrate 35, and a large number of two-dimensionally arranged on the growth layer 36 surface. A Schottky electrode 37 is provided. The electrode 37 is divided into a main electrode 37a at a predetermined position and a peripheral electrode 37b surrounding the main electrode. Then, by applying the voltage of the high voltage source 38 between the main electrode 37a and the peripheral electrode 37b, the carrier generated in the growth layer 36 is processed only on the surface side of the semiconductor radiation detector 34. It has become. As a result, in the fourth embodiment, the two-dimensional array is formed by electrode processing only on the surface side without providing grooves by laser cutting or the like on the surface side of the semiconductor radiation detector 34 and separating the elements. In addition, a semiconductor radiation detector comprising a large number of elements can be easily realized.

  In each of the above embodiments and modifications, a CdTe growth layer by the MOVPE method is used, but a CdZnTe growth layer can be used instead. In addition, the semiconductor radiation detectors shown in the above embodiments are merely examples, and various modifications can be made without departing from the spirit of the present invention.

  In the semiconductor radiation detector of the present invention, a GaAs powder or a GaAs crystal is thermally decomposed on the Si substrate surface to deposit divalent arsenic, thereby forming a CdTe or CdZnTe growth layer on the Si substrate which has been difficult in the past. It can be firmly laminated by the method. In addition, since a Si substrate having a large area and a strong substrate can be obtained at low cost, a large area and strong semiconductor radiation detector can be obtained at low cost by laminating a CdTe or CdZnTe growth layer on its surface by the MOVPE method. can get. Therefore, the present invention is useful.

1 is a perspective view schematically showing a semiconductor radiation detector according to a first embodiment of the present invention. It is sectional drawing which shows a part of manufacturing process of the semiconductor radiation detector roughly. It is sectional drawing which shows a part of manufacturing process of the semiconductor radiation detector roughly. It is sectional drawing which shows a part of manufacturing process of the semiconductor radiation detector roughly. It is sectional drawing which shows a part of manufacturing process of the semiconductor radiation detector roughly. It is sectional drawing which shows a part of manufacturing process of the semiconductor radiation detector roughly. It is sectional drawing which shows roughly the semiconductor radiation detector which is a modification of 1st Example. It is sectional drawing which shows roughly the semiconductor radiation detector which is 2nd Example. It is sectional drawing which shows roughly the semiconductor radiation detector which is the modification 1 of 2nd Example. It is sectional drawing which shows schematically the semiconductor radiation detector which is the modification 2. It is a perspective view which shows roughly the semiconductor radiation detector which is 3rd Example. It is a perspective view which shows roughly the semiconductor radiation detector which is 4th Example.

Explanation of symbols

10, 10A, 20, 20A, 20B, 31, 34 ... semiconductor radiation detector, 11, 21 ... Si substrate, 12 ... arsenic coating layer, 13, 22, 23, 24 ... CdTe growth layer, 14 ... CdTe intermediate growth layer , 15 ... separation grooves, 26 and 37 ... Schottky electrodes, 32a ... surface electrodes, 32b ... guard ring electrodes.

Claims (9)

A method of manufacturing a semiconductor radiation detector in which a CdTe or CdZnTe growth layer is laminated on a surface of a Si substrate by MOVPE, and the growth layer is an active layer for incident radiation, wherein the Si substrate is in a high-temperature reducing atmosphere. GaAs powder or GaAs crystal is decomposed while being placed inside, arsenic is deposited on the Si substrate, and a CdTe or CdZnTe growth layer is formed on the Si substrate on which the arsenic is deposited. Manufacturing method of semiconductor radiation detector. 2. The method of manufacturing a semiconductor radiation detector according to claim 1, wherein the Si substrate is a low-resistance N-type, and the CdTe or CdZnTe growth layer is a high-resistance P-type. 3. The semiconductor radiation detector according to claim 2, wherein a low-resistance N-type thin CdTe or CdZnTe intermediate growth layer is formed between the Si substrate and the CdTe or CdZnTe growth layer. Manufacturing method. The Si substrate is a low-resistance P-type, and the CdTe or CdZnTe growth layer is formed by laminating a high-resistance P-type layer on the Si substrate side and a low-resistance N-type layer on the surface side. A method for manufacturing a semiconductor radiation detector according to claim 1. 5. The thin CdTe or CdZnTe intermediate growth layer which is a low resistance P type containing arsenic is formed between the Si substrate and the high resistance P type layer. Manufacturing method of semiconductor radiation detector. 6. The method of manufacturing a semiconductor radiation detector according to claim 4, wherein a Schottky electrode is provided instead of the N-type layer on the surface side. The groove reaching the Si substrate from the growth layer on the surface side is provided by a cutting means, and is separated into a large number of unit elements arranged two-dimensionally. Manufacturing method of semiconductor radiation detector. 2. A plurality of surface electrodes or Schottky electrodes arranged two-dimensionally on the surface on the growth layer side, and a guard ring electrode surrounding the periphery of the surface electrodes or Schottky electrodes are provided. The manufacturing method of the semiconductor radiation detector of any one of 1-6. The low resistance growth layer on the surface side is divided into a large number of small regions and arranged two-dimensionally, and for the small region or the small region that is the Schottky electrode, a main small region at a predetermined position and the main small region The method of manufacturing a semiconductor radiation detector according to claim 1, wherein a high voltage is applied between a plurality of peripheral small regions surrounding the region.

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