JP2008059785A - Manufacturing method of organic electron device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an organic electron device provided with a thin base plate and flexibility by using a large-scale base plate. <P>SOLUTION: The manufacturing method of the organic electron device includes in order a process in which an organic electron device is formed on a first surface of a base plate, a process in which a moisture-proof layer is formed on the organic electron device, a sealing base plate composed of a gas-barrier polymer base plate is coated on a base plate surface on a side of the organic electron device, a process in which a second surface of the base plate is made thinner, a process in which a second polymer layer having a same linear expansion factor with the sealing base plate is coated on the second surface and a heat treatment process. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a method for manufacturing an organic electronic device using a thin substrate, for example, an organic EL light emitting device or an organic semiconductor device.

  As a flexible organic electroluminescence element using a conventional thin substrate, a transparent anode layer, an organic light emitting medium layer, a cathode layer, and a sealing layer are laminated on one surface of a light-transmitting substrate, A structure in which a warp preventing layer is provided on the other surface of the conductive substrate has been proposed (see, for example, Patent Document 1). In the organic electroluminescence element described in Patent Document 1, an organic electroluminescence element is formed on one of the translucent substrates, and then a sealing layer is formed on the organic electroluminescence element via an adhesive layer. It is manufactured by forming a warp preventing layer on the other surface of the substrate. In this manufacturing method, for example, when a glass substrate is used for a light-transmitting substrate, it is difficult to use a glass substrate of 0.3 mm or less due to manufacturing defects (glass cracking, deflection during conveyance) during mass production. . Therefore, the thickness of the organic electroluminescence element described in Patent Document 1 is 0.01 mm for the adhesive layer, 0.05 mm for the sealing layer, and 0.01 mm for the warp prevention layer, but the thickness of the translucent substrate is 0.3 mm. Thus, it was impossible to form a thickness of 0.37 mm or less.

  As another conventional technique, there is a proposal of an organic electroluminescence element using a transparent gas barrier member in which a transparent resin layer is adhered on at least one surface of a thickness of 10 / incense`70 / high-thin sheet glass. (For example, refer to Patent Document 2). This method of manufacturing an electroluminescent element is a first step of producing a transparent gas barrier member by a process of attaching a transparent resin layer to a thickness of 10/70 incense and a high-thin sheet glass, and the transparent gas barrier property on the member. It is manufactured by a second step of producing an organic electroluminescence element, and a third step of attaching and sealing a transparent gas barrier member on the organic electroluminescence element.

Here, the first step discloses, as an example, a step of producing a gas barrier member by laminating a thickness of 10 × 70 incense, a high-thin sheet glass, and a transparent resin layer through a transparent adhesive material. . In this manufacturing method, if the size is about 50 mm × 50 mm × 70 μm, there is no problem in handling, but it is difficult to handle glass having a size of 200 mm × 200 mm × 70 μm or more for convenience of manufacturing. Therefore, although there is no problem at the trial production stage, it is not suitable for mass production that requires multiple chamfering with a large substrate.
JP 2003-317937 A (page 6, FIG. 1) Japanese Unexamined Patent Publication No. 2004-79432 (page 14, FIG. 5)

  Conventional organic electroluminescence elements having flexibility using a thin substrate have the following problems. The conventional technique of Patent Document 1 has a limitation in thinning, and the conventional technique of Patent Document 2 has a problem that it cannot cope with mass production using a large substrate of 200 mm × 200 mm size or more.

  Then, an object of this invention is to provide the method which can manufacture the organic electroluminescent element which has flexibility using a large sized substrate.

  The method for producing an electronic device having flexibility according to the present invention includes a step of forming an organic electronic device on a first surface of a substrate, a step of forming a moisture-proof layer on the organic electronic device, and a high gas barrier property on the organic electronic device. A step of attaching a sealing substrate made of a molecular substrate, a step of thinning the second surface side of the substrate, a step of forming a second polymer layer having a linear expansion coefficient equivalent to that of the sealing substrate, and a heat treatment It was decided to produce in the order of processes called processes.

  By using the method for producing a thin organic electronic device of the present invention, it becomes possible to produce a thin organic electronic device having an overall thickness of 0.3 mm or less using a large substrate.

  The method for producing a thin organic electronic device of the present invention includes a first step of forming an organic electronic device on a first surface of a substrate, a second step of forming a moisture-proof layer on the organic electronic device, and an organic electron of the substrate. A third step of attaching a sealing substrate made of a gas barrier polymer substrate to the device side, a fourth step of thinning the second surface side of the substrate, and a linear expansion coefficient equivalent to the sealing substrate on the second surface A fifth step of providing a second polymer layer having the above and a sixth step of heat treatment are sequentially performed. With such a manufacturing method, it becomes possible to manufacture a thin organic electronic device having a total thickness of 0.3 mm or less using a large substrate with high productivity. In addition, the temperature of the substrate from the first step to the fourth step is suppressed to 50 ° C. or less, and heat treatment is performed in the last step, which is caused by the difference between the linear expansion coefficient and the thermal contraction coefficient of the inorganic material and the polymer material. Warpage can be prevented. Furthermore, by using a UV curable resin in the third step or the fifth step, it is possible to prevent the substrate from warping in the step.

  Hereinafter, the manufacturing method of the thin organic electronic device of this invention is demonstrated in detail based on drawing.

  A method of manufacturing the thin organic electronic device of this example will be described with reference to FIG. As shown in FIG. 1 (a), an organic electronic device 1 was formed on a glass substrate 2. In this example, a non-alkali precision polished glass of 400 mm × 400 mm × 0.7 mmt was used as the glass substrate. Moreover, the electroluminescent element was formed as an organic electronic device. A large number of organic molecules and device structures used in organic electroluminescence devices are disclosed, and their combinations are infinite.

  In this embodiment, an anode formed of a transparent conductive film made of ITO, IZO or the like is formed by a method such as sputtering, vapor deposition, or CVD, and then a hole injection layer made of copper phthalocyanine or an aromatic amine, also an aromatic amine A hole transport layer made of α-NPD, TPD derivative, etc., and then a host material made of a metal complex of 8-hydroxyquinoline derivative such as Alq3, BAlq3, Bebq2, etc. as a light emitting layer, perylene, quinacridone, coumarin, A layer containing a fluorescent light emitting dye such as rubrene or DCJTB as a dopant was formed by co-evaporation, and an electron transport layer made of Alq3, Bebq2, or the like, and a cathode in which Al was laminated on a LiF thin film were formed by vacuum deposition. Here, the anode is formed into a desired pattern by a photolithography process, and the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the cathode layer are formed by a mask film forming method. An electroluminescence element was produced. Note that the thickness of each layer is not related to the features of the invention, so the description is omitted. As the organic electronic device, it is possible to produce a field effect organic transistor in addition to the above-described organic electroluminescence element.

  Next, as shown in FIG.1 (b), the sealing layer 3 was provided so that an organic electronic device might be covered. As the sealing layer 3, 1000 nm of SiNx was laminated by the CVD method. In addition to this, it is also possible to form a silicon thin film such as SiOx / SiC or an insulating metal oxide film in addition to SiNx by CVD or sputtering. In this embodiment, only the inorganic film is used for the sealing layer, but a multilayer structure of an organic film and an inorganic film made of a polymer is also effective.

  Next, as shown in FIG. 1C, a gas barrier polymer substrate 5 was pasted on the organic electronic device 1 via a UV curable resin 4. At this time, the UV curable resin 4 was polymerized and cured by irradiation with ultraviolet rays. As the gas barrier polymer substrate 5, polymer films such as polyether sulfone, polyethylene naphthalate, polyester terephthalate, polycarbonate, and fluororesin can be used. In this example, a substrate obtained by depositing 1000 mm of SiNx film on polyethylene naphthalate having a thickness of 0.05 mm by the CVD method was used.

  Next, as shown in FIG.1 (d), the glass surface 6 in which the organic electronic device 1 was not formed was immersed in the etching solution containing a hydrofluoric acid, and glass etching was performed, and thickness was reduced to 0.05 mm. .

  Further, a polymer layer 7 was formed on the glass surface 6 as shown in FIG. In this embodiment, the UV curable resin 4 is uniformly applied to a thickness of 0.01 mm and polymerized and cured by ultraviolet rays. However, as shown in FIG. 1C, a polymer substrate may be attached. In that case, it is not necessary to be a gas barrier polymer substrate.

  Finally, the entire organic electroluminescence element 8 was heat-treated in a clean oven at 90 ° C. for 5 hours to completely cure the UV curable resin 4. With such a manufacturing method, a flexible organic electroluminescence element can be realized with a thickness of about 0.1 mm. After the heat treatment, the organic electronic device had no defects in appearance such as warpage, and the current-voltage characteristics and voltage-luminance characteristics of the organic electroluminescence element were almost unchanged before and after the heat treatment. Furthermore, even when left in a high temperature and high humidity environment of 60 ° C.-90% for 1000 hours, the changes in current-voltage characteristics and voltage-luminance characteristics were 1% or less, respectively.

  In addition, by controlling the manufacturing process of the organic electroluminescence element shown in FIGS. 1A to 1C to 50 ° C. or lower, various inorganic materials and polymer materials can be combined, and material options are facilitated. . Therefore, it is possible not only to solve manufacturing problems, but also to design a higher-quality organic electroluminescence element.

  By the organic electronic device manufacturing method using the thin substrate of the present invention, flexible organic EL light-emitting devices and organic semiconductor devices can be realized, flexible TFT liquid crystal displays, flexible organic electroluminescence displays, flexible organic electroluminescence light sources, etc. Various industrial applications are possible.

It is a schematic diagram explaining the manufacturing method of the organic electronic device of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Organic electronic device 2 Glass substrate 3 Sealing layer 4 UV curable resin 5 Gas barrier property sealing substrate 6 Glass surface 7 Polymer layer

Claims (4)

  A first step of forming an organic electronic device on the first surface of the substrate; a second step of forming a moisture-proof layer on the organic electronic device; and a gas barrier polymer substrate on the organic electronic device side of the substrate. A third step of attaching a sealing substrate; a fourth step of thinning the second surface side of the substrate; and a second polymer having a linear expansion coefficient equivalent to the sealing substrate on the second surface. An organic electronic device manufacturing method comprising a fifth step of providing a layer and a sixth step of heat treatment.   The method of manufacturing an organic electronic device according to claim 1, wherein the temperature of the substrate is 50 ° C. or lower from the first step to the fourth step.   3. The method of manufacturing an organic electronic device according to claim 1, wherein in the third step, the substrate and the sealing substrate are attached via a UV curable resin.   4. The method according to claim 1, wherein the fifth step is a step of attaching a polymer substrate having a linear expansion coefficient equivalent to that of the sealing substrate to the second surface. Manufacturing method for organic electronic devices.

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