CN107527998B - Flexible substrate, flexible OLED device and preparation method thereof - Google Patents
Flexible substrate, flexible OLED device and preparation method thereof Download PDFInfo
- Publication number
- CN107527998B CN107527998B CN201710767108.7A CN201710767108A CN107527998B CN 107527998 B CN107527998 B CN 107527998B CN 201710767108 A CN201710767108 A CN 201710767108A CN 107527998 B CN107527998 B CN 107527998B
- Authority
- CN
- China
- Prior art keywords
- layer
- metal oxide
- oxide insulating
- insulating layer
- oled device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 55
- 238000002360 preparation method Methods 0.000 title abstract description 5
- 239000004642 Polyimide Substances 0.000 claims abstract description 61
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 61
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 61
- 229920001721 polyimide Polymers 0.000 claims abstract description 61
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 25
- 238000000137 annealing Methods 0.000 claims abstract description 14
- 230000000903 blocking effect Effects 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 21
- 239000010409 thin film Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 14
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 9
- 239000005751 Copper oxide Substances 0.000 claims description 9
- 229910000431 copper oxide Inorganic materials 0.000 claims description 9
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 4
- 230000035515 penetration Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 179
- 239000007789 gas Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920000307 polymer substrate Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000005462 imide group Chemical group 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention discloses a flexible substrate, a flexible OLED device and a preparation method thereof, wherein the flexible substrate comprises: a polyimide layer; and the metal oxide insulating layer is covered on the polyimide layer and used for blocking gas and/or water generated during annealing of the polyimide layer from permeating. In this way, embodiments provided by the present invention are able to block the penetration of water and/or gas.
Description
Technical Field
The invention relates to the technical field of organic electroluminescence, in particular to a flexible substrate, a flexible OLED device and a preparation method thereof.
Background
An organic electroluminescent (OLED) device is a self-luminous device, and has advantages of light weight, thin thickness, high luminous efficiency, and the like. Among them, the flexible OLED device receives more and more attention due to its characteristics of low power consumption, being deformable, being bendable, and the like.
A flexible OLED device is a display device fabricated on a flexible substrate using OLED technology. Generally, the substrate material commonly used for the flexible OLED device includes high molecular polymer, metal foil, ultra-thin glass, and the like, wherein the high molecular polymer substrate has good flexibility and high surface flatness.
The inventor of the present invention found in a long-term research and development process that a high temperature annealing process is generally performed in a manufacturing process of a flexible OLED device, when a substrate material of the flexible OLED device is a high molecular polymer, such as polyimide, the polyimide is prone to generate water and oxygen at a high temperature, and a barrier property of the polyimide substrate itself to water and oxygen is poor, so that water and oxygen are prone to permeate into the flexible OLED device, and in a serious case, the flexible OLED device is prone to fail.
Disclosure of Invention
The invention mainly solves the technical problem of providing a flexible substrate, a flexible OLED device and a preparation method thereof, which can prevent water and gas from permeating.
In order to solve the technical problems, the invention adopts a technical scheme that: providing a flexible substrate comprising: a polyimide layer and a metal oxide insulating layer; the metal oxide insulating layer covers the polyimide layer and is used for blocking gas and/or water generated during annealing of the polyimide layer from permeating.
In order to solve the technical problem, the invention adopts another technical scheme that: providing a flexible OLED device, the device including a flexible substrate and an array substrate disposed on the flexible substrate, the flexible substrate including: a polyimide layer; and the metal oxide insulating layer covers one side of the polyimide layer and is used for blocking gas and/or water generated during annealing of the polyimide layer from permeating.
In order to solve the technical problem, the invention adopts another technical scheme that: provided is a method for manufacturing a flexible OLED device, including: providing a substrate; forming a polyimide layer on the substrate; covering a metal oxide insulating layer on the polyimide layer; forming a thin film transistor back plate layer on the metal oxide insulating layer; forming a first electrode layer on the thin film transistor back plate layer; forming a pixel defining layer on the thin film transistor back plate layer, and forming an opening at the position of the pixel defining layer corresponding to the first electrode layer, wherein the first electrode layer is exposed from the opening; forming a light emitting layer in an opening region of the pixel defining layer; forming a second electrode layer on the light emitting layer; and peeling the substrate off the polyimide layer to obtain the flexible OLED device.
The invention has the beneficial effects that: compared with the prior art, the flexible substrate provided by the invention comprises the polyimide layer and the metal oxide insulating layer covered on the polyimide layer, and the metal oxide insulating layer has better compactness, so that on one hand, gas and/or water generated during annealing of the polyimide layer can be prevented from permeating through the metal oxide insulating layer, and on the other hand, gas and/or water outside the flexible OLED device can be prevented from permeating through the metal oxide insulating layer, so that the stability of the flexible OLED device is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts. Wherein:
FIG. 1 is a schematic structural diagram of one embodiment of a flexible substrate of the present invention;
FIG. 2 is a schematic structural diagram of one embodiment of a flexible OLED device of the present invention;
FIG. 3 is a schematic flow chart of one embodiment of a method of making a flexible OLED device according to the present invention;
fig. 4 is a schematic structural diagram of an embodiment of the OLED flexible device corresponding to steps S101 to S109 in fig. 3.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a flexible substrate according to an embodiment of the present invention, in which the flexible substrate 1 includes a polyimide layer 10 and a metal oxide insulating layer 12; wherein, the metal oxide insulating layer 12 covers the polyimide layer 10 for blocking the gas and/or water generated during the annealing of the polyimide layer 10 from permeating through the metal oxide insulating layer 12; specifically, annealing is a heat treatment process, which refers to a process of slowly heating a sample to be treated to a certain high temperature, maintaining for a sufficient time, and then cooling to room temperature at a suitable speed; polyimide (PI) refers to a class of polymers having still imide rings (-CO-N-CO-) in the main chain, which readily generate water and/or oxygen, etc. at high temperatures (e.g., > 200 ℃); at this time, the metal oxide insulating layer 12 covering the polyimide layer 10 can block, on the one hand, gas and/or water (indicated by a dotted arrow in fig. 1) generated during annealing of the polyimide layer 10 from permeating through the metal oxide insulating layer 12, and on the other hand, gas and/or water outside the flexible substrate (indicated by a solid arrow in fig. 1) from permeating through the metal oxide insulating layer 12, because of its high compactness. In other embodiments, the method of covering the metal oxide insulating layer 12 on the polyimide layer 10 provided by the present invention can also be extended to other flexible substrates made of high molecular polymer, such as a flexible substrate made of polyester.
In one embodiment, the material of the metal oxide insulating layer 12 includes any one of copper oxide, aluminum oxide, and titanium oxide, and the metal oxide insulating layer 12 has a high density and a high ductility (flexibility), and when it is coated on the polyimide layer 10, the influence on the flexibility of the polyimide layer 10 is small. In one application scenario, the metal oxide insulating layer 12 is a copper oxide layer; in another application scenario, the metal oxide insulating layer 12 is a metal layer formed by a mixture of copper oxide and titanium oxide; in yet another application scenario, the metal oxide insulating layer 12 includes at least two metal layers, for example, the metal oxide insulating layer 12 includes a copper oxide layer and an aluminum oxide layer covering the copper oxide layer, and the like. In other embodiments, the material of the metal oxide insulating layer 12 may be other, and the number of the layers of the metal oxide insulating layer 12 may be at least one, and the material of each layer is the same or different, which is not limited in the present invention.
In another embodiment, the metal oxide insulating layer 12 is formed by using a Physical Vapor Deposition (PVD) technique, i.e., a physical method is used to vaporize the surface of a material source (solid or liquid) into gaseous atoms, molecules or parts ionized into ions under vacuum, and a metal oxide insulating film, i.e., the metal oxide insulating layer 12 in the present invention, is deposited on the surface of the polyimide layer 10 by a low-pressure gas (or plasma) process; in an application scenario, the physical vapor deposition technology specifically includes at least one of sputtering coating, vacuum coating, ion coating, arc plasma coating, and molecular beam epitaxy. In other embodiments, the metal oxide insulating layer 12 may be formed by other techniques, which is not limited in the present invention. In one application scenario, the metal oxide insulating layer 12 is formed to a thickness of 50-100nm (e.g., 50nm, 70nm, 90nm, 100nm, etc.).
Referring to fig. 2, fig. 2 is a schematic structural diagram of an embodiment of a flexible OLED device according to the present invention, and a basic structure of the flexible OLED device is generally "flexible substrate/anode/organic functional layer/cathode", and a light emitting principle of the flexible OLED device is similar to that of an OLED device with a common glass substrate, and is not repeated here. In this embodiment, the flexible OLED device includes:
a polyimide layer 20; in other embodiments, the flexible substrate may be a high molecular polymer substrate made of other materials.
A metal oxide insulating layer 22 covering one side of the polyimide layer 20 for blocking permeation of gas and/or water generated during annealing of the polyimide layer 20 through the metal oxide insulating layer 22; the content of the metal oxide insulating layer 22 in this embodiment is the same as that in the above embodiment, and is not described again here. The polyimide layer 20 and the metal oxide insulating layer 22 may be provided by a flexible substrate.
A thin film transistor back plate layer 24 formed on the metal oxide insulating layer 22, i.e. on the side of the metal oxide insulating layer 22 opposite to the polyimide layer 20; thin Film Transistors (TFTs) are widely used as switching devices and driving devices in the display field, and may be formed on a glass substrate or a plastic substrate, and in the present embodiment, the thin film transistor back plate layer 24 is illustrated as a simple structure of only one layer; in a specific application scenario, the tft backplane layer 24 includes a substrate, a gate electrode, a gate insulating layer, a semiconductor layer, an etch stop layer, a source electrode, a drain electrode, a protective layer, a planarization layer, and the like.
The patterned first electrode layers 26 are arranged on the thin film transistor back plate layer 24 at intervals, namely, on the side of the thin film transistor back plate layer 24 opposite to the polyimide layer 20; in one embodiment, the first electrode layer 26 may be an anode, and the material thereof may be ITO (indium tin oxide); the pattern of the first electrode layer 26 may be stripes or other patterns spaced apart.
Pixel Defining Layers (PDL)28, which are disposed on the tft back plate layer 24 at intervals, and are located in the interval region of the first electrode layer 26 on the tft back plate layer 24, wherein the height of the pixel defining layer 28 is greater than the height of the first electrode layer 26, that is, the pixel defining layer 28 is located on the side of the patterned first electrode layer 26 opposite to the polyimide layer 20, and an opening region (not shown) is disposed at a position corresponding to the first electrode layer 26; in one embodiment, the pixel defining layer 28 is formed of an insulating material; in general, the cross-sectional shape of the pixel defining layer 28 structure is mainly trapezoidal, and in other embodiments, the structure of the pixel defining layer 28 may be other.
A light-emitting layer 21 disposed on the first electrode layer 26 and located in an area defined by the pixel defining layer 28 and the first electrode layer 26, that is, the light-emitting layer 21 is located in an opening area of the pixel defining layer 28; in one embodiment, the pixel defining layer 28 may be formed by limiting the light emitting layer 21 in the opening region, and may ensure that the light emitting layer 21 does not overflow out of the opening region as much as possible.
A second electrode layer 23 formed on the light-emitting layer 21, i.e., on a side of the light-emitting layer 21 opposite to the polyimide layer 20; in one embodiment, the second electrode layer 23 is a cathode, and the material thereof may be Mo, Al, Ag, Au, or the like.
In other embodiments, the flexible OLED device may be other, for example, a charge transport layer, an electron transport layer, and the like may be further included, which is not limited in the present invention. Although the failure mechanism of the flexible OLED device is not completely understood at present, there are many research results that indicate that the presence of water or oxygen inside the flexible OLED device is a major factor affecting the lifetime of the flexible OLED device, for example, when the cathode used in the flexible OLED device is a metal, it is very easy to react with water or oxygen penetrating in the flexible OLED device, and thus charge injection is affected; for another example, some materials in the back-plane layer of a thin film transistor in a flexible OLED device may also react with permeated water or oxygen, and these reactions may cause degradation of the performance of the flexible OLED device. The water or oxygen permeating in the flexible OLED device comes from the outside of the OLED device on one hand, and comes from the high-temperature decomposition of the polyimide layer in the process of manufacturing the flexible OLED device on the other hand, for example, when a thin film transistor back plate layer is manufactured, the device needs to be subjected to a high-temperature (200-400 ℃) annealing process. The flexible OLED device provided by the invention is characterized in that the polyimide layer 20 is covered with the metal oxide insulating layer 22, the metal oxide insulating layer 22 has good compactness, and on one hand, gas (such as oxygen) and/or water outside the flexible OLED device can be prevented from permeating into the OLED device from the metal oxide insulating layer 22, and on the other hand, gas (such as oxygen) and/or water generated during annealing of the polyimide layer 20 can be prevented from permeating from the metal oxide insulating layer.
The process of manufacturing the flexible OLED device will be described in detail below, please refer to fig. 3, and fig. 3 is a schematic flow chart of an embodiment of a method for manufacturing a flexible OLED device according to the present invention, the method includes:
s101: providing a substrate; specifically, referring to fig. 4a, the substrate 40 may be a hard substrate such as glass.
S102: forming a polyimide layer on a substrate; specifically, referring to FIG. 4b, in one embodiment, a layer of polyimide is applied to one side of the substrate 40, and the whole is then heated to polymerize and cure the polyimide, thereby forming a polyimide layer 42.
S103: covering a metal oxide insulating layer on the polyimide layer; specifically, referring to fig. 4c, in one embodiment, a metal oxide insulating layer 44 is formed on a side of the polyimide layer 42 opposite to the substrate 40 by using a physical vapor deposition method, in this embodiment, the material of the metal oxide insulating layer 44 is copper oxide, but may be other embodiments.
S104: forming a thin film transistor back plate layer on the metal oxide insulating layer; specifically, referring to fig. 4d, the thin film transistor back plate layer 46 is schematically illustrated as only one layer, and in a specific application scenario, the method for forming the thin film transistor back plate layer 46 includes: the grid electrode, the grid electrode insulating layer, the semiconductor layer and the etching barrier layer are respectively formed by four photoetching processes, then the source electrode and the drain electrode are formed by one photoetching process, and then the protective layer, the flat layer and the like are formed. In other application scenarios, other modes are also possible.
S105: forming a first electrode layer on the thin film transistor back plate layer; specifically, referring to fig. 4e, the first electrode layer 48 may be formed by magnetron sputtering, Chemical Vapor Deposition (CVD), or the like on the side of the tft back plate layer 46 opposite to the substrate 40, and then the patterned first electrode layer 48 may be formed by etching, or the like.
S106: forming a pixel defining layer on the thin film transistor back plate layer, and forming an opening at the position of the pixel defining layer corresponding to the first electrode layer, wherein the first electrode layer is exposed from the opening; specifically, referring to fig. 4f, the pixel defining layer 41 is made of an insulating material, and an opening 410 may be formed in the pixel defining layer 41 by photolithography or the like, so that the first electrode layer 48 is exposed from the opening 410.
S107: forming a light emitting layer in the opening region of the pixel defining layer; specifically, referring to fig. 4g, in one embodiment, the light emitting layer 43 may be formed within the opening 410 using a vacuum evaporation or printing process;
s108: forming a second electrode layer on the light emitting layer; in particular, referring to fig. 4h, in one embodiment, the second electrode layer 45 may be formed on the side of the light emitting layer 43 opposite to the substrate 40 by means of magnetron sputtering or CVD.
S109: peeling the substrate and the polyimide layer to obtain a flexible OLED device; specifically, referring to fig. 4i, the polyimide layer 42 and the substrate 40 are generally adhered together by weak chemical bonding (e.g., hydrogen bonding, etc.), and the substrate 40 and the polyimide layer 42 can be peeled off directly by external force.
In summary, unlike the prior art, the flexible substrate provided by the present invention includes a polyimide layer and a metal oxide insulating layer covering the polyimide layer, wherein the metal oxide insulating layer has a relatively high compactness, and can block gas and/or water generated during annealing of the polyimide layer from permeating through the metal oxide insulating layer on the one hand, and can also block gas and/or water outside the flexible OLED device from permeating through the metal oxide insulating layer on the other hand, thereby improving the stability of the flexible OLED device.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes performed by the present specification and drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (8)
1. A flexible substrate, comprising:
a polyimide layer and a metal oxide insulating layer;
the metal oxide insulating layer covers the polyimide layer and is used for blocking gas and/or water generated during annealing of the polyimide layer from permeating,
wherein the material of the metal oxide insulating layer comprises copper oxide.
2. The flexible substrate of claim 1,
the thickness of the metal oxide insulating layer is 50-100 nm.
3. The flexible substrate of claim 1,
the metal oxide insulating layer is formed by adopting a physical vapor deposition technology.
4. A flexible OLED device, comprising a flexible substrate and an array substrate disposed on the flexible substrate, wherein the flexible substrate comprises:
a polyimide layer;
a metal oxide insulating layer covering the polyimide layer for blocking permeation of gas and/or water generated during annealing of the polyimide layer,
wherein the material of the metal oxide insulating layer comprises copper oxide.
5. Flexible OLED device according to claim 4,
the thickness of the metal oxide insulating layer is 50-100 nm.
6. Flexible OLED device according to claim 4,
the metal oxide insulating layer is formed by adopting a physical vapor deposition technology.
7. The flexible OLED device of claim 4, wherein the array substrate comprises:
a thin film transistor back plate layer disposed on the metal oxide insulating layer;
a first electrode layer disposed on the thin film transistor back plate layer;
the pixel defining layer is arranged on the thin film transistor back plate layer, an opening is formed in the position, corresponding to the first electrode layer, of the pixel defining layer, and the first electrode layer is exposed from the opening;
a light emitting layer disposed in the opening region of the pixel defining layer;
a second electrode layer disposed on the light emitting layer.
8. A method for preparing a flexible OLED device is characterized by comprising the following steps:
providing a substrate;
forming a polyimide layer on the substrate;
covering a metal oxide insulating layer on the polyimide layer;
forming a thin film transistor back plate layer on the metal oxide insulating layer;
forming a first electrode layer on the thin film transistor back plate layer;
forming a pixel defining layer on the thin film transistor back plate layer, and forming an opening at the position of the pixel defining layer corresponding to the first electrode layer, wherein the first electrode layer is exposed from the opening;
forming a light emitting layer in the opening region of the pixel defining layer;
forming a second electrode layer on the light emitting layer;
peeling the substrate and the polyimide layer to obtain the flexible OLED device,
wherein the material of the metal oxide insulating layer comprises copper oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710767108.7A CN107527998B (en) | 2017-08-30 | 2017-08-30 | Flexible substrate, flexible OLED device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710767108.7A CN107527998B (en) | 2017-08-30 | 2017-08-30 | Flexible substrate, flexible OLED device and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107527998A CN107527998A (en) | 2017-12-29 |
| CN107527998B true CN107527998B (en) | 2020-07-03 |
Family
ID=60682902
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710767108.7A Active CN107527998B (en) | 2017-08-30 | 2017-08-30 | Flexible substrate, flexible OLED device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107527998B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109768183B (en) * | 2019-01-25 | 2023-05-23 | 固安翌光科技有限公司 | Organic photoelectric device |
| KR20210074494A (en) * | 2019-12-12 | 2021-06-22 | 엘지디스플레이 주식회사 | Polyimide substrate and display device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104124387A (en) * | 2013-04-28 | 2014-10-29 | 海洋王照明科技股份有限公司 | Flexible conductive electrode and preparation method thereof |
| CN104380366A (en) * | 2012-06-19 | 2015-02-25 | 新日铁住金化学株式会社 | Display device, method for manufacturing same, polyimide film for display device supporting bases, and method for producing polyimide film for display device supporting bases |
| CN105070651A (en) * | 2015-08-17 | 2015-11-18 | Tcl集团股份有限公司 | Method for manufacturing pixel defining layer structure and OLED device |
-
2017
- 2017-08-30 CN CN201710767108.7A patent/CN107527998B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104380366A (en) * | 2012-06-19 | 2015-02-25 | 新日铁住金化学株式会社 | Display device, method for manufacturing same, polyimide film for display device supporting bases, and method for producing polyimide film for display device supporting bases |
| CN104124387A (en) * | 2013-04-28 | 2014-10-29 | 海洋王照明科技股份有限公司 | Flexible conductive electrode and preparation method thereof |
| CN105070651A (en) * | 2015-08-17 | 2015-11-18 | Tcl集团股份有限公司 | Method for manufacturing pixel defining layer structure and OLED device |
Non-Patent Citations (2)
| Title |
|---|
| 冯魏良等.柔性显示衬底的研究及进展.《液晶与显示》.2012,第27卷(第5期), * |
| 柔性显示衬底的研究及进展;冯魏良等;《液晶与显示》;20121031;第27卷(第5期);第600-603页，图4 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107527998A (en) | 2017-12-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9881985B2 (en) | OLED device, AMOLED display device and method for manufacturing same | |
| US7663302B2 (en) | Organic light emitting display (OLED) and its method of fabrication | |
| JP3626736B2 (en) | Method for evaporating thin films used in organic electroluminescent displays | |
| US9515288B2 (en) | Organic electroluminescent device | |
| WO2018113019A1 (en) | Oled display panel and manufacturing method therefor | |
| TWI231153B (en) | Organic electroluminescence display device and its fabrication method | |
| US10665721B1 (en) | Manufacturing method of flexible TFT backplane and flexible TFT backplane | |
| US9577211B2 (en) | Organic electronic element and method for manufacturing organic electronic element | |
| US7704677B2 (en) | Method of patterning conductive polymer layer, organic light emitting device, and method of manufacturing the organic light emitting device | |
| JP2016048696A (en) | Organic light-emitting display device and method for manufacturing the same | |
| WO2019085045A1 (en) | Preparation method for oled anode and preparation method for oled display device | |
| WO2015103837A1 (en) | Thin-film transistor and manufacturing method therefor, array substrate and organic light-emitting display panel | |
| CN108987430B (en) | Organic light-emitting diode, array substrate and manufacturing method | |
| US10193106B2 (en) | Method for manufacturing OLED device | |
| CN107527998B (en) | Flexible substrate, flexible OLED device and preparation method thereof | |
| US9461070B2 (en) | Thin film transistor, method for manufacturing the same, and device comprising the same | |
| WO2019041578A1 (en) | Oled substrate and manufacturing method therefor | |
| JP2005319678A (en) | Laminate, light emitting element and its use | |
| CN109148381B (en) | Array substrate, manufacturing method thereof, display panel and display device | |
| CN104752487B (en) | Flexible base board and flexible display device preparation method | |
| US20050029092A1 (en) | Apparatus and method of employing self-assembled molecules to function as an electron injection layer of OLED | |
| JP2004088096A (en) | Method for manufacturing organic semiconductor layer having molecules alignment | |
| KR100806704B1 (en) | The manufacturing method of transparent conducting electrode for organic light emitting diode | |
| KR102396457B1 (en) | Flexible Substrate, Flexible Display Device Using the Same and Method for Manufacturing the Same | |
| US20080268136A1 (en) | Method of producing organic light emitting apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |