CN107527998A - A kind of flexible substrate, flexible OLED devices and preparation method thereof - Google Patents
A kind of flexible substrate, flexible OLED devices and preparation method thereof Download PDFInfo
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- CN107527998A CN107527998A CN201710767108.7A CN201710767108A CN107527998A CN 107527998 A CN107527998 A CN 107527998A CN 201710767108 A CN201710767108 A CN 201710767108A CN 107527998 A CN107527998 A CN 107527998A
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- 239000000758 substrate Substances 0.000 title claims abstract description 49
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 58
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 58
- 239000004642 Polyimide Substances 0.000 claims abstract description 53
- 229920001721 polyimide Polymers 0.000 claims abstract description 52
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 25
- 238000000137 annealing Methods 0.000 claims abstract description 12
- 239000010409 thin film Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 18
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 13
- 238000005516 engineering process Methods 0.000 claims description 9
- 229960004643 cupric oxide Drugs 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 238000001764 infiltration Methods 0.000 abstract description 3
- 230000008595 infiltration Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 167
- 239000007789 gas Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000004952 Polyamide Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229920002647 polyamide Polymers 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 150000003949 imides Chemical group 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000005751 Copper oxide Substances 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002466 imines Chemical class 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 210000003746 feather Anatomy 0.000 description 1
- 244000144992 flock Species 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention discloses a kind of flexible substrate, flexible OLED devices and preparation method thereof, the flexible substrate includes：Polyimide layer；Metal oxide insulating layer, it is covered on the polyimide layer, is passed through for obstructing the polyimide layer in gas caused by annealing and/or water.By the above-mentioned means, embodiment provided by the present invention can stop the infiltration of water and/or gas.
Description
Technical field
The present invention relates to technical field of organic electroluminescence, more particularly to a kind of flexible substrate, flexible OLED devices and
Its preparation method.
Background technology
Organic electroluminescent (OLED) device is a kind of selfluminous element, has light weight, thickness of thin, luminous efficiency height etc.
Advantage.Wherein, flexible OLED devices due to its low-power consumption, it is deformable, flexible the features such as, receive more and more attention.
Flexible OLED devices are a kind of display devices made on flexible substrates using OLED technology.It is in general, soft
Property the conventional backing material of OLED have high molecular polymer, sheet metal, ultra-thin glass etc., wherein, high molecular polymer
Substrate pliability is preferably and surface smoothness is higher.
The present inventor has found during long-term R ＆ D, typically can be through during the processing procedure of flexible OLED devices
High-temperature annealing process is crossed, when its backing material is high molecular polymer, such as during polyimides, polyimides is easy at high temperature
Water and oxygen are produced, and polyimide substrate is poor to the barrier properties of water and oxygen in itself, easily causes water and oxygen to permeate
Into flexible OLED devices, flexible OLED devices can be caused to fail when serious.
The content of the invention
The present invention solves the technical problem of providing a kind of flexible substrate, flexible OLED devices and preparation method thereof,
The infiltration of water and gas can be stopped.
In order to solve the above technical problems, one aspect of the present invention is：A kind of flexible substrate is provided, including：
Polyimide layer and metal oxide insulating layer；The metal oxide insulating layer is covered on the polyimide layer, is used for
The polyimide layer is obstructed to pass through in gas caused by annealing and/or water.
In order to solve the above technical problems, another technical solution used in the present invention is：A kind of flexible OLED devices are provided,
The device includes flexible substrate and the array base palte being arranged in the flexible substrate, and the flexible substrate includes：Polyamides is sub-
Amine layer；Metal oxide insulating layer, the polyimide layer side is covered, produced for obstructing the polyimide layer in annealing
Raw gas and/or water pass through.
In order to solve the above technical problems, another technical solution used in the present invention is：A kind of flexible OLED devices are provided
Preparation method, including：Substrate is provided；Polyimide layer is formed on the substrate；Gold is covered on the polyimide layer
Belong to oxide insulating layer；Thin film transistor backplane layer is formed on the metal oxide insulating layer；In the thin film transistor (TFT)
First electrode layer is formed on backsheet layer；Pixel defining layer is formed on the thin film transistor backplane layer, and in pixel circle
The position that given layer corresponds to the first electrode layer forms opening, and the first electrode layer is exposed out of described opening；In the picture
Element, which defines, forms luminescent layer in the open area of layer；The second electrode lay is formed on the light-emitting layer；By the strippable substrate institute
Polyimide layer is stated, and then obtains the flexible OLED devices.
The beneficial effects of the invention are as follows：The situation of prior art is different from, flexible substrate provided by the present invention includes poly-
Imide layer and the metal oxide insulating layer being covered on polyimide layer, the metal oxide insulating layer compactness compared with
Good, on the one hand can obstruct polyimide layer passes through in gas caused by annealing and/or water from metal oxide insulating layer,
On the other hand the gas outside flexible OLED devices can also be obstructed and/or water passes through from metal oxide insulating layer, so as to
Improve the stability of flexible OLED devices.
Brief description of the drawings
Technical scheme in order to illustrate the embodiments of the present invention more clearly, make required in being described below to embodiment
Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for
For those of ordinary skill in the art, on the premise of not paying creative work, other can also be obtained according to these accompanying drawings
Accompanying drawing.Wherein：
Fig. 1 is the structural representation of the embodiment of flexible substrate one of the present invention；
Fig. 2 is the structural representation of the embodiment of flexible OLED devices one of the present invention；
Fig. 3 is the schematic flow sheet of the embodiment of preparation method one of flexible OLED devices of the present invention；
Fig. 4 is the structural representation of the embodiment of OLED flexible devices one corresponding to step S101-S109 in Fig. 3.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.Based on this
Embodiment in invention, those of ordinary skill in the art are obtained every other under the premise of performing creative labour is not made
Embodiment, belong to the scope of protection of the invention.
Referring to Fig. 1, Fig. 1 is the structural representation of the embodiment of flexible substrate one of the present invention, flexible substrate 1 includes polyamides
Imine layer 10 and metal oxide insulating layer 12；Wherein, metal oxide insulating layer 12 is covered on polyimide layer 10, is used for
Barrier polyimide layer 10 passes through in gas caused by annealing and/or water from metal oxide insulating layer 12；Specifically, anneal
Be a kind of Technology for Heating Processing, refer to pending sample being heated slowly to certain high temperature, keep time enough, then with
Suitable speed is cooled to the process of room temperature；Polyimides (PI) refers to also have the one of imide ring (- CO-N-CO-) on main chain
Birds of the same feather flock together compound, it easily produces water and/or oxygen etc. in the case of high temperature (for example, 200 DEG C of ＞)；Now, it is covered in polyamides Asia
On the one hand metal oxide insulating layer 12 in amine layer 10 can obstruct polyimide layer 10 and anneal because its compactness is higher
Caused gas and/or water (as indicated by the dashed arrow in fig. 1) pass through from metal oxide insulating layer 12, on the other hand
Gas outside flexible substrate and/or water (as shown in solid arrow in Fig. 1) can be obstructed from metal oxide insulating layer 12
Through.In other embodiments, the side provided by the present invention that metal oxide insulating layer 12 is covered on polyimide layer 10
Method is extended also in the flexible substrate of other high molecular polymers, such as polyesters flexible substrate etc..
In one embodiment, the material of above-mentioned metal oxide insulating layer 12 includes cupric oxide, aluminum oxide, titanium oxide
Any of, the compactness of metal oxide insulating layer 12 is preferable, and its ductility (flexibility) is excellent, when it is covered in polyamides
It is smaller to the flexible influence of polyimide layer 10 when on imine layer 10.In an application scenarios, metal oxide insulating layer 12
For copper oxide；In another application scene, metal oxide insulating layer 12 is the mixture formation of cupric oxide and titanium oxide
One metal level；In another application scenarios, metal oxide insulating layer 12 includes at least two metal layers, such as metal oxidation
Thing insulating barrier 12 includes copper monoxide layer and covers alumina layer of copper oxide etc..In other embodiments, metal oxide
The material of insulating barrier 12 can be other, and the number of plies of metal oxide insulating layer 12 can be at least one layer, every layer of material it is identical or
Person is different, and this is not limited by the present invention.
In another embodiment, above-mentioned metal oxide insulating layer 12 is formed using physical vapour deposition (PVD) (PVD) technology,
I.e. under vacuum, using physical method, material source (solid or liquid) surface is gasificated into gaseous atom, molecule or part
Ion is ionized into, and by low-pressure gas (or plasma) process, it is exhausted in the surface depositing metal oxide of polyimide layer 10
Edge film, i.e. metal oxide insulating layer 12 in the present invention；In an application scenarios, above-mentioned physical gas phase deposition technology tool
Body includes at least one of technologies such as sputter coating, vacuum coating, ion film plating, arc plasma plating and molecular beam epitaxy.
In other embodiments, metal oxide insulating layer 12 can also be formed using other technologies, and this is not limited by the present invention.One
In individual application scenarios, the thickness of the metal oxide insulating layer 12 formed for 50-100nm (such as 50nm, 70nm, 90nm,
100nm etc.).
Referring to Fig. 2, Fig. 2 is the structural representation of the embodiment of flexible OLED devices one of the present invention, flexible OLED devices
Basic structure be generally " flexible substrate/anode/organic function layer/negative electrode ", its principle of luminosity and common glass substrate
OLED is similar, will not be repeated here.In the present embodiment, the flexible OLED devices include：
Polyimide layer 20；In other embodiments, or other materials high molecular polymer flexible substrate.
Metal oxide insulating layer 22, covering polyimide layer 20 side, for obstructing polyimide layer 20 in annealing
Caused gas and/or water pass through from metal oxide insulating layer 22；The correlation of metal oxide insulating layer 22 in the present embodiment
Content is same with the above-mentioned embodiment, will not be repeated here.Wherein, above-mentioned polyimide layer 20 and metal oxide insulating layer 22
It can be provided by a flexible substrate.
Thin film transistor backplane layer 24, formed on metal oxide insulating layer 22, i.e., positioned at metal oxide insulating layer
22 back to the side of polyimide layer 20；Thin film transistor (TFT) (TFT) is widely used as switching device and drive device in display field,
It can be formed on glass baseplate or plastic basis material, in the present embodiment, only simply illustrate film crystal with a Rotating fields
Pipe backsheet layer 24；In a specific application scenarios, thin film transistor backplane layer 24 include base material, grid, gate insulator,
Semiconductor layer, etching barrier layer, source electrode, drain electrode, protective layer, flatness layer etc..
The first electrode layer 26 of patterning, is disposed on thin film transistor backplane layer 24, i.e., positioned at thin film transistor (TFT)
Backsheet layer 24 is back to the side of polyimide layer 20；In one embodiment, first electrode layer 26 can be anode, and its material can be with
For ITO (tin indium oxide)；The pattern of first electrode layer 26 can be the striped or other being spaced apart.
Pixel defining layer (PDL) 28, is disposed on thin film transistor backplane layer 24, and exists positioned at first electrode layer 26
In interval region on thin film transistor backplane layer 24, the height of pixel defining layer 28 is more than the height of first electrode layer 26, i.e.,
Pixel defining layer 28 is located at the first electrode layer 26 of patterning back to the side of polyimide layer 20, and corresponds to first electrode layer 26
Position is provided with open area (not indicating)；In one embodiment, pixel defining layer 28 is formed for insulating materials；Generally,
The cross sectional shape of the structure of pixel defining layer 28 is based on trapezoidal, and in other embodiments, the structure of pixel defining layer 28 is alternatively
Other.
Luminescent layer 21, it is arranged in first electrode layer 26, and is defined positioned at pixel defining layer 28 with first electrode layer 26
Region in, i.e., luminescent layer 21 is located in the open area of above-mentioned pixel defining layer 28；In one embodiment, above-mentioned pixel
Define layer 28 and luminescent layer 21 can be limited in its open area and formed, can ensure that luminescent layer 21 will not be spilt into out as far as possible
Beyond the domain of mouth region.
The second electrode lay 23, formed on luminescent layer 21, i.e., positioned at luminescent layer 21 backwards to the side of polyimide layer 20；One
In individual embodiment, the second electrode lay 23 is negative electrode, and its material can be Mo, Al, Ag, Au etc..
In other embodiments, above-mentioned flexible OLED devices can also be other, for example, may also include charge transport layer,
Electron transfer layer etc., this is not limited by the present invention.Although being not entirely clear that at present to the failure mechanism of flexible OLED devices,
But there are many results of study to show that the presence of flexible OLED devices internal water or oxygen is to influence the master in flexible OLED devices life-span
Want factor, such as when negative electrode used in flexible OLED devices is metal, easily with the water that is permeated in flexible OLED devices or
Oxygen reacts, and influences electric charge injection；In another example some materials in thin film transistor backplane layer in flexible OLED devices
It can be reacted with the water or oxygen of infiltration, these reactions can all cause the decline of flexible OLED devices performance.And flexible OLED
On the one hand the water or oxygen permeated in device comes from outside OLED, on the other hand come from flexible OLED devices processing procedure mistake
Polyimide layer pyrolytic in journey, for example, when preparing thin film transistor backplane layer, above-mentioned device need to pass through high temperature (200-
400 DEG C) annealing process.Flexible OLED devices provided by the present invention are on polyimide layer 20 covered with layer of metal oxide
Insulating barrier 22, the compactness of metal oxide insulating layer 22 is preferable, on the one hand can obstruct the gas outside flexible OLED devices
(for example, oxygen) and/or water are penetrated into inside OLED from metal oxide insulating layer 22, on the other hand, can also be hindered
Passed through every polyimide layer 20 in gas caused by annealing (for example, oxygen) and/or water from metal oxide insulating layer.
The process for preparing above-mentioned flexible OLED devices is described more fully below, referring to Fig. 3, Fig. 3 is flexible for the present invention
The schematic flow sheet of the embodiment of preparation method one of OLED, this method include：
S101：Substrate is provided；Specifically, reference can be made to Fig. 4 a, the material of substrate 40 can be the hard substrates such as glass.
S102：Polyimide layer is formed on substrate；Specifically, reference can be made to Fig. 4 b, in one embodiment, in substrate 40
Side applies a strata acid imide, then by above-mentioned overall heating to cause polyimides polymerizing curable, so as to form polyamides Asia
Amine layer 42.
S103：Metal oxide insulating layer is covered on polyimide layer；Specifically, reference can be made to Fig. 4 c, implement at one
In example, a metal oxide insulating layer is formed using physical vaporous deposition back to the side of substrate 40 in polyimide layer 42
44, in the present embodiment, the material of metal oxide insulating layer 44 is cupric oxide, is alternatively other in other embodiments.
S104：Thin film transistor backplane layer is formed on metal oxide insulating layer；Specifically, reference can be made to Fig. 4 d, originally show
Thin film transistor backplane layer 46 is only drawn with one layer of signal in intention, in one specifically application scenarios, forms film crystal
The method of pipe backsheet layer 46 includes：The lithographic process of Xian You tetra- forms grid, gate insulator, semiconductor layer, etch stopper respectively
Layer, source electrode, drain electrode are then formed by one of lithographic process, then form protective layer, flatness layer etc..In other application scene
In, or other modes.
S105：First electrode layer is formed on thin film transistor backplane layer；Specifically, can be first in film reference can be made to Fig. 4 e
Transistor backsheet layer 46 forms the first electricity back to the side of substrate 40 using the mode such as magnetron sputtering or chemical vapor deposition (CVD)
Pole layer 48, then using the methods of etching to form the first electrode layer 48 of patterning.
S106：Pixel defining layer is formed on thin film transistor backplane layer, and first electrode layer is corresponded in pixel defining layer
Position form opening, first electrode layer exposes out of opening；Specifically, reference can be made to Fig. 4 f, the material of pixel defining layer 41 are
Isolation material, opening 410 is formed in pixel defining layer 41 using techniques such as photoetching, to cause first electrode layer 48 from opening
Expose in 410.
S107：Luminescent layer is formed in the open area of pixel defining layer；Specifically, reference can be made to Fig. 4 g, implement at one
In mode, luminescent layer 43 is formed in opening 410 using vacuum evaporation or typography；
S108：The second electrode lay is formed on luminescent layer；Specifically, reference can be made to Fig. 4 h, in one embodiment, second is electric
Pole layer 45 can be formed by way of magnetron sputtering or CVD in the side of luminescent layer 43 back to substrate 40.
S109：Substrate and polyimide layer are peeled off, and then obtain flexible OLED devices；Specifically, reference can be made to Fig. 4 i, gather
(such as hydrogen bond action etc.) is acted between imide layer 42 and substrate 40 generally by weak chemical bond to stick together, can be direct
Substrate 40 and polyimide layer 42 are peeled off under external force.
Sum it up, be different from the situation of prior art, flexible substrate provided by the present invention include polyimide layer with
And the metal oxide insulating layer on polyimide layer is covered in, the metal oxide insulating layer compactness is preferable, on the one hand may be used
Passed through with obstructing polyimide layer in gas caused by annealing and/or water from metal oxide insulating layer, on the other hand
The gas outside flexible OLED devices can be obstructed and/or water passes through from metal oxide insulating layer, so as to improve flexibility
The stability of OLED.
Embodiments of the present invention are the foregoing is only, are not intended to limit the scope of the invention, it is every to utilize this
The equivalent structure or equivalent flow conversion that description of the invention and accompanying drawing content are made, or directly or indirectly it is used in other correlations
Technical field, it is included within the scope of the present invention.
Claims (10)
1. a kind of flexible substrate, it is characterised in that the flexible substrate includes：
Polyimide layer and metal oxide insulating layer；The metal oxide insulating layer is covered on the polyimide layer,
Passed through for obstructing the polyimide layer in gas caused by annealing and/or water.
2. flexible substrate according to claim 1, it is characterised in that
The material of the metal oxide insulating layer includes any of cupric oxide, aluminum oxide, titanium oxide.
3. flexible substrate according to claim 1, it is characterised in that
The thickness of the metal oxide insulating layer is 50-100nm.
4. flexible substrate according to claim 1, it is characterised in that
The metal oxide insulating layer is formed using physical gas phase deposition technology.
5. a kind of flexible OLED devices, including flexible substrate and the array base palte that is arranged in the flexible substrate, its feature exist
In the flexible substrate includes：
Polyimide layer；
Metal oxide insulating layer, it is covered on the polyimide layer, is produced for obstructing the polyimide layer in annealing
Raw gas and/or water pass through.
6. flexible OLED devices according to claim 5, it is characterised in that
The material of the metal oxide insulating layer includes any in cupric oxide, aluminum oxide, titanium oxide.
7. flexible OLED devices according to claim 5, it is characterised in that
The thickness of the metal oxide insulating layer is 50-100nm.
8. flexible OLED devices according to claim 5, it is characterised in that
The metal oxide insulating layer is formed using physical gas phase deposition technology.
9. flexible OLED devices according to claim 5, it is characterised in that the array base palte includes：
Thin film transistor backplane layer, it is arranged on the metal oxide insulating layer；
First electrode layer, it is arranged on the thin film transistor backplane layer；
Pixel defining layer, it is arranged on the thin film transistor backplane layer, and the pixel defining layer corresponds to the first electrode
Expose formed with opening, the first electrode layer out of described opening the position of layer；
Luminescent layer, it is arranged in the open area of the pixel defining layer；
The second electrode lay, set on the light-emitting layer.
A kind of 10. preparation method of flexible OLED devices, it is characterised in that including：
Substrate is provided；
Polyimide layer is formed on the substrate；
Metal oxide insulating layer is covered on the polyimide layer；
Thin film transistor backplane layer is formed on the metal oxide insulating layer；
First electrode layer is formed on the thin film transistor backplane layer；
Pixel defining layer is formed on the thin film transistor backplane layer, and the first electrode is corresponded in the pixel defining layer
The position of layer forms opening, and the first electrode layer is exposed out of described opening；
Luminescent layer is formed in the open area of the pixel defining layer；
The second electrode lay is formed on the light-emitting layer；
The substrate and the polyimide layer are peeled off, and then obtain the flexible OLED devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710767108.7A CN107527998B (en) | 2017-08-30 | 2017-08-30 | Flexible substrate, flexible OLED device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710767108.7A CN107527998B (en) | 2017-08-30 | 2017-08-30 | Flexible substrate, flexible OLED device and preparation method thereof |
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| CN109768183A (en) * | 2019-01-25 | 2019-05-17 | 固安翌光科技有限公司 | A kind of organic electro-optic device |
| CN112992974A (en) * | 2019-12-12 | 2021-06-18 | 乐金显示有限公司 | Polyimide substrate and display device |
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| CN104124387A (en) * | 2013-04-28 | 2014-10-29 | 海洋王照明科技股份有限公司 | Flexible conductive electrode and preparation method thereof |
| CN104380366A (en) * | 2012-06-19 | 2015-02-25 | 新日铁住金化学株式会社 | Display device, method for manufacturing same, polyimide film for display device supporting bases, and method for producing polyimide film for display device supporting bases |
| CN105070651A (en) * | 2015-08-17 | 2015-11-18 | Tcl集团股份有限公司 | Method for manufacturing pixel defining layer structure and OLED device |
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| CN104380366A (en) * | 2012-06-19 | 2015-02-25 | 新日铁住金化学株式会社 | Display device, method for manufacturing same, polyimide film for display device supporting bases, and method for producing polyimide film for display device supporting bases |
| CN104124387A (en) * | 2013-04-28 | 2014-10-29 | 海洋王照明科技股份有限公司 | Flexible conductive electrode and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109768183A (en) * | 2019-01-25 | 2019-05-17 | 固安翌光科技有限公司 | A kind of organic electro-optic device |
| CN112992974A (en) * | 2019-12-12 | 2021-06-18 | 乐金显示有限公司 | Polyimide substrate and display device |
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| CN107527998B (en) | 2020-07-03 |
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