JP2008054277A5 - - Google Patents

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Publication number
JP2008054277A5
JP2008054277A5 JP2007045045A JP2007045045A JP2008054277A5 JP 2008054277 A5 JP2008054277 A5 JP 2008054277A5 JP 2007045045 A JP2007045045 A JP 2007045045A JP 2007045045 A JP2007045045 A JP 2007045045A JP 2008054277 A5 JP2008054277 A5 JP 2008054277A5
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film
piezoelectric substrate
expansion coefficient
linear expansion
main surface
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JP2007045045A
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JP4247282B2 (en
JP2008054277A (en
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Priority to JP2007045045A priority Critical patent/JP4247282B2/en
Priority claimed from JP2007045045A external-priority patent/JP4247282B2/en
Priority to US11/880,168 priority patent/US7569976B2/en
Priority to EP07014595.8A priority patent/EP1885062B1/en
Publication of JP2008054277A publication Critical patent/JP2008054277A/en
Publication of JP2008054277A5 publication Critical patent/JP2008054277A5/ja
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Claims (11)

10×10-6/K〜20×10-6/Kの線膨張係数を有し、鏡面化された主面を有する基材と、前記主面上に設けられ、前記基材の線膨張係数よりも小さく、−1×10-6/K〜10×10-6/Kの線膨張係数を有する材料で構成された膜と、を具備することを特徴とする圧電基板。 Has a linear expansion coefficient of 10 × 10 -6 / K~20 × 10 -6 / K, a substrate having a mirror-finished main surface, provided on the main surface, the linear expansion coefficient of the base material And a film made of a material having a linear expansion coefficient of −1 × 10 −6 / K to 10 × 10 −6 / K. 前記膜は、5%〜40%の気孔率を有することを特徴とする請求項1記載の圧電基板。   The piezoelectric substrate according to claim 1, wherein the film has a porosity of 5% to 40%. 前記膜は、粒子の積層体で構成されていることを特徴とする請求項1記載の圧電基板。   The piezoelectric substrate according to claim 1, wherein the film is composed of a laminated body of particles. 前記粒子のサイズが5μm〜300μmであることを特徴とする請求項3記載の圧電基板。   The piezoelectric substrate according to claim 3, wherein the size of the particles is 5 μm to 300 μm. 前記基材の線膨張係数よりも小さい線膨張係数を有する材料は、Ti、W、Mo、Ta、Si及びこれらの合金、酸化アルミニウム、酸化ケイ素、酸化マグネシウム、酸化ジルコニウム、酸化チタン、炭化ケイ素、炭化ホウ素、窒化アルミニウム、窒化ケイ素及びこれらの化合物の固溶体、並びにこれら金属及び化合物の混合物からなる群より選ばれた少なくとも一つであることを特徴とする請求項1から請求項4のいずれかに記載の圧電基板。   Materials having a linear expansion coefficient smaller than that of the base material are Ti, W, Mo, Ta, Si and alloys thereof, aluminum oxide, silicon oxide, magnesium oxide, zirconium oxide, titanium oxide, silicon carbide, 5. The material according to claim 1, which is at least one selected from the group consisting of boron carbide, aluminum nitride, silicon nitride, a solid solution of these compounds, and a mixture of these metals and compounds. The piezoelectric substrate as described. 前記膜は、0.05mm〜2mmの厚さを有することを特徴とする請求項1から請求項5のいずれかに記載の圧電基板。   The piezoelectric film according to claim 1, wherein the film has a thickness of 0.05 mm to 2 mm. 前記基材は、タンタル酸リチウム、ニオブ酸リチウム、水晶、四ホウ酸リチウム及び酸化亜鉛からなる群より選ばれたもので構成されていることを特徴とする請求項1から請求項6のいずれかに記載の圧電基板。   The said base material is comprised by what was chosen from the group which consists of lithium tantalate, lithium niobate, a crystal | crystallization, lithium tetraborate, and a zinc oxide, The any one of Claim 1-6 characterized by the above-mentioned. 2. The piezoelectric substrate according to 1. 前記基材と前記膜との間にアンダーコートが設けられていることを特徴とする請求項1から請求項7のいずれかに記載の圧電基板。   The piezoelectric substrate according to any one of claims 1 to 7, wherein an undercoat is provided between the base material and the film. 請求項1から請求項8のいずれかに記載の圧電基板と、前記圧電基板の前記粗面化された主面と反対側の主面上に設けられた素子と、を具備することを特徴とする圧電素子。   A piezoelectric substrate according to any one of claims 1 to 8, and an element provided on a main surface opposite to the roughened main surface of the piezoelectric substrate. Piezoelectric element. 10×10-6/K〜20×10-6/Kの線膨張係数を有し、鏡面化された主面を有する基材を準備する工程と、前記基材の線膨張係数よりも小さく、−1×10-6/K〜10×10-6/Kの線膨張係数を有する材料で構成された膜を前記主面上に形成する工程と、を具備することを特徴とする圧電基板の製造方法。 Has a linear expansion coefficient of 10 × 10 -6 / K~20 × 10 -6 / K, a step of preparing a substrate having a mirror-finished main surface, smaller than the linear expansion coefficient of the substrate, Forming a film made of a material having a linear expansion coefficient of −1 × 10 −6 / K to 10 × 10 −6 / K on the main surface. Production method. スラリーを用いたコーティング法により、前記膜を前記基材に形成し、形成した膜を前記基材の支持部材とすることを特徴とする請求項10記載の圧電基板の製造方法。   11. The method for manufacturing a piezoelectric substrate according to claim 10, wherein the film is formed on the base material by a coating method using slurry, and the formed film is used as a support member for the base material.
JP2007045045A 2006-07-27 2007-02-26 Piezoelectric substrate and manufacturing method thereof Active JP4247282B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007045045A JP4247282B2 (en) 2006-07-27 2007-02-26 Piezoelectric substrate and manufacturing method thereof
US11/880,168 US7569976B2 (en) 2006-07-27 2007-07-20 Piezo-electric substrate and manufacturing method of the same
EP07014595.8A EP1885062B1 (en) 2006-07-27 2007-07-25 Piezo-electric substrate and manufacturing method of the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006204740 2006-07-27
JP2007045045A JP4247282B2 (en) 2006-07-27 2007-02-26 Piezoelectric substrate and manufacturing method thereof

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008262370A Division JP4773495B2 (en) 2006-07-27 2008-10-09 Method for manufacturing piezoelectric element

Publications (3)

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JP2008054277A JP2008054277A (en) 2008-03-06
JP2008054277A5 true JP2008054277A5 (en) 2008-08-21
JP4247282B2 JP4247282B2 (en) 2009-04-02

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2010007805A1 (en) * 2008-07-17 2012-01-05 株式会社村田製作所 Duplexer
JP2017216450A (en) * 2016-05-30 2017-12-07 日東電工株式会社 Piezoelectric film
JP6907026B2 (en) * 2016-05-30 2021-07-21 日東電工株式会社 Piezoelectric film with transparent electrode and pressure sensor

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