JP2006326723A5 - - Google Patents
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- JP2006326723A5 JP2006326723A5 JP2005151339A JP2005151339A JP2006326723A5 JP 2006326723 A5 JP2006326723 A5 JP 2006326723A5 JP 2005151339 A JP2005151339 A JP 2005151339A JP 2005151339 A JP2005151339 A JP 2005151339A JP 2006326723 A5 JP2006326723 A5 JP 2006326723A5
- Authority
- JP
- Japan
- Prior art keywords
- atomic
- pores
- metal
- anodic oxidation
- valve metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 2
- 239000010407 anodic oxide Substances 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Description
図２は、本発明におけるナノ構造体の製造方法の一例を示す工程図である。基板２１または下地層２２上に２層以上のＡｌまたはＡｌ合金層（２３，２４）を形成し、陽極酸化により細孔２５を形成する。その後、細孔内に金属・半導体・酸化物等の内包物２６を充填し、上記陽極酸化皮膜の上層２４のみ選択的に除去する事により、突起物２７の長さの均一なナノ細線を有するナノ構造体を得ることができる。
前記陽極酸化により孔が形成される材料が、Ａｌを５０ａｔｍｉｃ％以上１００ａｔｏｍｉｃ％以下含有する金属または合金であることが好ましい。
FIG. 2 is a process diagram showing an example of a method for producing a nanostructure in the present invention. Two or more Al or Al alloy layers (23, 24) are formed on the substrate 21 or the base layer 22, and the pores 25 are formed by anodic oxidation. Thereafter, the inclusions 26 of metal, semiconductor, oxide, etc. are filled in the pores, and only the upper layer 24 of the anodic oxide film is selectively removed, so that nanowires with uniform lengths of the protrusions 27 are obtained. Nanostructures can be obtained.
The material in which the holes are formed by the anodic oxidation is preferably a metal or alloy containing Al in the range of 50 atomic% to 100 atomic%.
このとき、Ａｌに対してバルブ金属Ｍ（Ｍ＝Ｔｉ、Ｚｒ、Ｈｆ、Ｎｂ、Ｔａ、Ｍｏ、Ｗ、Ｃｒのいずれかの少なくとも１種類）を含有する様に添加するが、合金がアモルファス相の領域となると、陽極酸化により形成される細孔の垂直性、直線性が低下する等して、Ａｌ膜の陽極酸化皮膜と同様のポーラス状皮膜を再現性良く得ることが困難になる。故に、添加するバルブ金属の種類にもよるが概ね５〜５０ａｔｏｍｉｃ％の範囲でバルブ金属を添加するのが好ましい。 In this case, valve metal M with respect to Al is added so as to contain (M = Ti, Zr, Hf , Nb, Ta, Mo, W, or at least one of Cr), an alloy of amorphous phase In the region, it becomes difficult to obtain a porous film similar to the anodic oxide film of the Al film with good reproducibility because the verticality and linearity of the pores formed by anodic oxidation are lowered. Therefore, it is preferable to add the valve metal in a range of approximately 5 to 50 atomic%, although it depends on the type of the valve metal to be added.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005151339A JP4681938B2 (en) | 2005-05-24 | 2005-05-24 | Method for producing nanostructure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005151339A JP4681938B2 (en) | 2005-05-24 | 2005-05-24 | Method for producing nanostructure |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006326723A JP2006326723A (en) | 2006-12-07 |
| JP2006326723A5 true JP2006326723A5 (en) | 2008-02-14 |
| JP4681938B2 JP4681938B2 (en) | 2011-05-11 |
Family
ID=37548975
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005151339A Expired - Fee Related JP4681938B2 (en) | 2005-05-24 | 2005-05-24 | Method for producing nanostructure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4681938B2 (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5094208B2 (en) * | 2006-08-24 | 2012-12-12 | キヤノン株式会社 | Manufacturing method of structure |
| KR20080053571A (en) * | 2006-12-11 | 2008-06-16 | 광주과학기술원 | Method for analysing nano-structure using electron microscope |
| EP2079095B1 (en) * | 2008-01-11 | 2012-01-11 | UVIS Light AB | Method of manufacturing a field emission display |
| JP5099836B2 (en) * | 2008-01-30 | 2012-12-19 | 株式会社高松メッキ | Manufacturing method of electron gun |
| US8048546B2 (en) * | 2009-12-16 | 2011-11-01 | Hitachi Global Storage Technologies Netherlands B.V. | Perpendicular magnetic recording disk with ordered nucleation layer and method for making the disk |
| US20170267520A1 (en) | 2010-10-21 | 2017-09-21 | Hewlett-Packard Development Company, L.P. | Method of forming a micro-structure |
| US9751755B2 (en) | 2010-10-21 | 2017-09-05 | Hewlett-Packard Development Company, L.P. | Method of forming a micro-structure |
| WO2012054045A1 (en) * | 2010-10-21 | 2012-04-26 | Hewlett-Packard Development Company, L.P. | Method of forming a nano-structure |
| WO2012054042A1 (en) | 2010-10-21 | 2012-04-26 | Hewlett-Packard Development Company, L.P. | Method of forming a nano-structure |
| WO2012054043A1 (en) | 2010-10-21 | 2012-04-26 | Hewlett-Packard Development Company, L.P. | Nano-structure and method of making the same |
| JP5824399B2 (en) * | 2012-03-30 | 2015-11-25 | 富士フイルム株式会社 | Resin mold for nanoimprint and manufacturing method thereof |
| KR20220022668A (en) * | 2020-08-19 | 2022-02-28 | (주)포인트엔지니어링 | Mold using anodized oxide layer, Mold apparatus including thereof, Product and Method for manufacturing the product using thereof |
| KR102469788B1 (en) * | 2021-02-22 | 2022-11-23 | (주)포인트엔지니어링 | Metal Product and Method for Manufacturing the Product |
| US20240218547A1 (en) * | 2021-05-07 | 2024-07-04 | Point Engineering Co., Ltd. | Metal structure and method for manufacturing same |
| CN116623133B (en) * | 2023-05-12 | 2023-11-24 | 中南大学 | Preparation method of metal needle point array type plasma photocatalyst |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05211029A (en) * | 1992-01-31 | 1993-08-20 | Ricoh Co Ltd | Electron emission element and its manufacture |
| JP3729449B2 (en) * | 2001-05-11 | 2005-12-21 | キヤノン株式会社 | Structure and device having pores |
| JP4383796B2 (en) * | 2003-08-07 | 2009-12-16 | キヤノン株式会社 | Nanostructure and manufacturing method thereof |
| JP4434658B2 (en) * | 2003-08-08 | 2010-03-17 | キヤノン株式会社 | Structure and manufacturing method thereof |
-
2005
- 2005-05-24 JP JP2005151339A patent/JP4681938B2/en not_active Expired - Fee Related
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