JP2008053547A - Display device, and manufacturing method therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a display device where a plurality of conductive particles can be captured on Au bumps, even when an Au bump area is made to be small for miniaturization and multiple output of a driver LSI. <P>SOLUTION: In a driver LSI arranged region 6a, a film wall 15 is formed of a film member so as to surround the plurality of Au bumps 7. A region is such that the film wall 15 is not formed and which is located inside the film wall 15 and is set to be a recess 15a. Via the ACF 9 stuck to the recess 15a, an input/output terminal 5 and the Au bumps 7 are connected directly to an insulating substrate. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a display device employing a COG method in which a driver LSI is directly mounted on an input / output terminal formed around an insulating substrate on which pixels such as a display device are formed using an anisotropic conductive film, and the display The present invention relates to a device manufacturing method.

  In recent years, a COG (Chip On Glass, hereinafter referred to as COG) method has been adopted as an inexpensive manufacturing method for liquid crystal display devices. This is a method of mounting a driver LSI with Au bumps directly on an input / output terminal formed around an insulating substrate such as glass using an anisotropic conductive film (hereinafter referred to as ACF). is there. When this method is employed, the input / output terminal array connected to the power supply line and signal line for driving the driver LSI needs to be connected to the Au bump provided on the driver LSI via the ACF.

  In addition, since it is necessary to provide a large number of Au bumps in the driver LSI, the area of the bumps must be very small, but the Au bump area has been reduced for the purpose of downsizing the driver LSI and increasing the number of outputs. In some cases, a plurality of conductive particles in the ACF that need to be captured on the Au bump often fail to be captured and cause a display defect such as a line defect.

  As a method for solving such a problem, as shown in Patent Document 1, a resist 8 that is an insulating member thicker than the electrode 5 is disposed around the electrode 5 on the printed circuit board 4 side, and a recess is formed only in the electrode 5 portion. It is disclosed that the ACF 6 is sandwiched between the bumps 2 of the semiconductor component 1 and the recesses to inhibit the fluidity when the ACF 6 is melted, thereby improving the trapping property of the conductive particles 7.

  However, in this structure, the resist 8 and the ACF 6 are in direct contact with each other, and interface peeling due to a decrease in adhesion tends to occur after the ACF 6 is cured. Also, unlike semiconductor components, the input / output terminals of a display device using liquid crystal or the like are very small. Therefore, when ACF6 is temporarily bonded using such a method, bubbles remain in the recesses and remain even after ACF6 is cured. There was a problem that reliability was lowered due to air bubbles.

  Patent Document 2 discloses a method of improving the ACF itself by dividing the ACF into a two-layer structure and mixing conductive particles only in the layer in contact with the panel side input / output terminal.

  However, even if this method is used, the ACF flows out of the driver LSI until the conductive particles in the ACF are captured by the driver LSI Au bumps and input / output terminals. There was a problem that particles were not captured.

Japanese Patent Laid-Open No. 11-16949 (page 2-3, FIGS. 1 and 2) JP 2005-333119 A (pages 17-20, FIGS. 1 and 2)

  The present invention has been made to solve the above-described problems, and even when the Au bump area is reduced for downsizing of the driver LSI or multiple outputs, a plurality of conductive particles are formed on the Au bump. It is an object to provide a display device that can be captured individually.

  The display device of the present invention extends from a plurality of pixels formed in a display region on an insulating substrate, inputs a plurality of input / output terminals formed in a peripheral region, and inputs an external signal to the input / output terminals. In the driver LSI having a plurality of bumps for driving the pixel and the driver LSI arrangement region in the peripheral region, a film wall portion is provided so as to surround the plurality of bumps, and the plurality of bumps are provided inside the film wall portion. The plurality of input / output terminals are connected to each other by an attached anisotropic conductive film.

  The display device manufacturing method of the present invention extends from a plurality of pixels formed in a display region on an insulating substrate, and includes a plurality of input / output terminals formed in a peripheral region, and the input / output terminals from the outside. And a driver LSI having a plurality of bumps for driving the pixels, a process for forming input / output terminals in the peripheral region of the insulating substrate, In a step of forming an insulating film on the entire surface, a step of sequentially depositing a passivation film and an organic film on the entire surface of the insulating substrate after forming a switching element for driving a pixel, and a driver LSI arrangement region in a peripheral region Removing the insulating film, the passivation film, and the organic film laminated so as to surround the plurality of bumps to form a film wall portion, and attaching the plurality of bumps to the inside of the film wall portion. The anisotropic conductive film, the step of connecting a plurality of input and output terminals, characterized in that it comprises a city.

  In the display device of the present invention, since the film wall portion is provided by the film member so as to surround the plurality of bumps in the driver LSI arrangement region in the peripheral region on the insulating substrate, the difference adhered to the inside of the film wall portion is provided. Since the amount of the anisotropic conductive film climbs on top of the film wall and flows out of the driver LSI placement area decreases, the anisotropic conductive film flows at a lower speed (flow velocity). The amount of conductive particles existing in the conductive conductive film is reduced to the outside, and the bumps and the input / output terminals are secured in the driver LSI placement area by sufficiently securing the conductive particles between the bumps and the input / output terminals. It is possible to prevent poor conduction between them.

  In the manufacturing method of the display device of the present invention, the film wall portion is formed in the same process as the process of forming the film member in the display region, so that the film wall portion forming process can be simplified.

Embodiments of the configuration and manufacturing method of a display device according to the present invention will be described below with reference to the drawings. In addition, what uses the same code | symbol in each figure shows the substantially same structure.
Embodiment 1 FIG.
1 is a front view showing a schematic configuration of a display device according to the present invention, FIG. 2 is an enlarged view of a main part in a peripheral region of the display device of FIG. 1, and FIG. 3 is a cross-sectional view in the AA direction of FIG. .

  In FIG. 1, a display device 20 according to the present invention includes a first insulating substrate 1 that is a transparent substrate such as glass, and a second insulating member that is disposed so as to face the first insulating substrate 1. A conductive substrate 2 is provided. The display region 3 on the first insulating substrate 1 includes a plurality of pixels formed in a matrix by a plurality of gate lines and source lines, and a switching element formed near the intersection of the pixels. ing. The second insulating substrate 2 is formed by forming RGB color filters in a matrix in positions facing the plurality of pixels formed on the display region 3 of the first insulating substrate 1, and between the two substrates. Display is performed by inputting a signal to the sealed liquid crystal (not shown). As shown in FIG. 2, the peripheral region 4 outside the display region 3 on the first insulating substrate 1 has an input / output terminal for inputting power and signals from the outside to a plurality of gate lines and source lines. 5 is formed.

  In FIG. 1, a power supply and a signal from the outside are sent from a control board 11 to a driver LSI 6 via a flexible printed circuit (FPC) 8. As shown in FIG. 3, the driver LSI 6 and the input / output terminal 5 are connected by using bumps 7 such as Au (hereinafter referred to as Au bumps) formed on the driver LSI 6 and ACF 9 on the first insulating substrate 1. It is done by implementing directly.

  In the ACF 9, plastic particles covered with Ni / Au plating or conductive particles 10 such as Ni particles are dispersed in an insulating resin such as epoxy, and the conductive particles 10 are connected to the Au bumps 7 and the input / output terminals 5. The driver LSI 6 and the input / output terminal 5 are brought into conduction by being captured between them.

  As shown in FIGS. 2 and 3, a film wall portion 15 is formed by a film member so as to surround a plurality of Au bumps 7 in the driver LSI arrangement area 6 a in the peripheral area 4. In addition, it is an area | region which does not form the film wall part 15, Comprising: Let the inside of the film wall part 15 be the recessed part 15a. The film wall 15 is formed so as to surround the plurality of Au bumps 7 at the same size as the driver LSI placement area 6a or inside the driver LSI placement area 6a. Further, the film wall portion 15 is not formed between the adjacent Au bumps 7. A plurality of input / output terminals 5 connected to the plurality of Au bumps 7 are provided in the recess 15a, and ITO 16 is formed on the input / output terminals to form a connection portion 5a with the Au bump 7. The ACF 9 is pasted so as to protrude slightly outward from the recess 15a and the driver LSI placement region 6a, and the connection portion 5a of the input / output terminal 5 and the Au bump 7 are directly connected to the first insulating substrate 1.

  Next, a manufacturing method for forming the film wall 15 and the recess 15a on the first insulating substrate 1 of the display device 20 of the present invention will be described in detail with reference to FIG. 4A to 4E are cross-sectional views for explaining a peripheral region of a display device including the input / output terminal 5 on the first insulating substrate 1 according to the present invention and a manufacturing process of the display region.

  In FIG. 4A, sputtering, photoengraving or the like is used on the first insulating substrate 1 such as glass, all the input / output terminals 5 on the gate line side in the peripheral region, and the gate electrode (gate) in the display region. Line) 21 is formed with a thickness of 2000 to 3000 mm. As the wiring material, aluminum, aluminum alloy, chromium, molybdenum, titanium, or the like is used.

  Next, in FIG. 4B, the gate insulating film 12 is formed on the entire surface using SiN or the like by plasma CVD.

  Next, in FIG. 4C, a gate electrode 21 as a switching element for driving each pixel in the display region, a channel layer 22 made of a-Si on the gate insulating film 12, a contact layer 23, a source electrode 24, a drain The electrode 25 is formed by plasma CVD or photolithography. Next, a passivation film 13 is formed in both the display region and the peripheral region using SiN or the like. The passivation film 13 extends from the source electrode 24 and prevents the surface of the source line material from being exposed and corroding between the wirings at input / output terminals (not shown) in the peripheral region on the source line side.

  Next, as shown in FIG. 4D, an organic film 14 made of an acrylic resin or the like is formed on the entire surface.

  Next, as shown in FIG. 4E, the insulating film 12, the passivation film 13, and the organic film 14 in the display region are removed by dry etching.

  At the same time, in the driver LSI arrangement region 6a in the peripheral region, the film formed of the insulating film 12, the passivation film 13, and the organic film 14 is removed by dry etching so as to surround the plurality of Au bumps 7, and the film wall 15 and A recess 15a that does not form the film wall 15 is formed. Further, as described above, the film wall portion 15 is formed so as to surround the plurality of Au bumps 7 within the same size as the driver LSI arrangement region 6 a or inside the driver LSI arrangement region 6 a, and between the adjacent Au bumps 7. Does not form the membrane wall 15. By not forming the film wall portion 15 between the Au bumps 7, it is possible to prevent bubbles from remaining when the Au bumps 7 and the input / output terminals 5 are connected by the ACF 9.

  Finally, an ITO 16 having a thickness of 0.1 μm is formed by sputtering on the connection portion 5a with the Au bump 7 on the input / output terminal 5 and the display area.

  Further, a method for connecting the driver LSI 6 to the peripheral region 4 of the first insulating substrate 1 will be described.

  As shown in FIGS. 2 and 3, first, the inside of the connection portion 5a and the recess portion 15a of the input / output terminal 5 formed in the peripheral region on the first insulating substrate 1 is completely covered, and from the driver LSI arrangement region 6a. ACF9 is applied so that it protrudes slightly.

  Next, after arranging the Au bump 7 of the driver LSI 6 and the connection portion 5a of the input / output terminal 5 with high accuracy, the ACF 9 is cured by thermocompression bonding using a heating / pressurizing tool and then connected. The pressure bonding conditions at this time are, for example, an ultimate temperature of ACF9 of 170 to 200 ° C., a time of 5 to 10 seconds, and a pressure of 30 to 100 MPa.

  When thermocompression bonding is performed under these conditions, the conductive particles 10 existing between the Au bump 7 and the input / output terminal 5 of the driver LSI 6 are flattened and conductive only in the direction (vertical direction) between the Au bump 7 and the input / output terminal 5. Further, since the insulating epoxy resin is present around each captured conductive particle 10 on the recess 15a, insulation is maintained.

  As shown in FIG. 3, the height h of the film wall portion 15 is formed to be lower than the Au bump 7. By setting the height h of the film wall portion 15 to 1.5 μm or more, the step between the film wall portion 15 formed in the driver LSI placement region 6a and the recess 15a becomes sufficient, and the ACF 9 becomes the uppermost portion 15b of the film wall portion 15. It is possible to reduce the speed and amount of running out to the outside of the recess 15a. In the present invention, for example, the gate insulating film 12 and the passivation film 13 are formed in a total thickness of 0.6 to 0.8 μm, and the organic film 14 is formed in a thickness of 1.0 μm or more, preferably 2 to 3 μm.

  As described above, in the display device 20 according to the present invention, since the film wall portion 15 is formed in the driver LSI arrangement region 6a, the ACF 9 is formed on the uppermost portion 15b of the film wall portion 15 by the step between the film wall portion 15 and the concave portion 15a. The amount of flowing out to the outside of the recess 15a decreases and the speed (flow velocity) at which the ACF 9 flows out decreases, so that the amount of the conductive particles 10 existing in the ACF 9 flowing out of the inside of the recess 15a when the driver LSI 6 is pressed is reduced. . Therefore, the conductive particles 10 in the ACF 9 can remain inside the recess 15a. That is, when the conductive particles 10 for conducting between the Au bump 7 and the input / output terminal 5 are sufficiently secured in the recess 15a, the occurrence of poor conduction between the Au bump 7 and the input / output terminal 5 is prevented. Therefore, display defects such as line defects can be prevented.

  Conventionally, after the driver LSI 6 is connected, the ACF 9 moves and the input / output terminal 5 is exposed, and the input / output terminal 5 is corroded to cause a defect. By forming the film wall portion 15 as in the display device 20 of the invention, it is possible to prevent the ACF 9 from moving after the driver LSI 6 is connected.

  Further, as shown in FIG. 3, the film wall portion 15 is formed so as to have a distance L from the side portion of the opposing Au bump 7 so that the amount of ACF 9 flowing out between the Au bump 7 and the film wall portion 15 can be reduced. Therefore, the amount of the conductive particles 10 that are about to flow from the inside of the recess 15a to the outside can be further reduced. Although the distance L is formed so as to be close to 0.1 μm or more, the amount of the conductive particles 10 that flow out from the inside of the recess 15a is further reduced without deteriorating the assembling property at the time of mounting. Can be reduced.

  The film wall portion 15 is formed of the insulating film 12, the passivation film 13, and the organic film 14. However, the film wall portion 15 may have a configuration in which a step is formed by the film wall portion 15 and the concave portion 15a. The same effect can be obtained by forming the film. Moreover, the membrane wall part 15 can also be comprised with a single layer film | membrane member. For example, the single-layer film wall 15 of the organic film 14 can be formed in the peripheral region in the same process as the organic film 14 formed in the display region.

  Further, the film wall 15 is formed in the same process as the process of forming the insulating film 12, the passivation film 13, and the organic film 14 that are film members in the display region, thereby simplifying the process of forming the film wall 15. However, the step of forming the film wall portion 15 can be formed in a separate step.

  In the present invention, the film wall portion 15 is formed in a substantially rectangular shape so as to surround the Au bumps 7 in the plurality of driver LSI arrangement regions 6a. However, the ACF 9 attached to the recess 15a is formed on the film wall portion 15. There is no particular limitation as long as it has a shape that rides on the uppermost portion 15b and flows out of the recess 15a and the speed (flow velocity) at which the ACF 9 flows out decreases.

  FIG. 5 is an enlarged view of a main part showing a modification of the display device according to the present invention. In FIG. 5, when the Au bump 7 is not formed on the short side 6b side of the driver LSI 6, the film wall portion 15 is not provided on a part of the short side 6b side, and the concave portion 15c having an opening is formed. By providing the recess 15c, the ACF 9 affixed to the driver LSI 6 arrangement area 6a flows out of the driver LSI arrangement area 6a from the opening provided on the short side 6b side. Thereby, the total amount of ACF 9 flowing out from the uppermost part of the film wall 15 on the long side 6 c side is reduced, and the conductive particles 10 for conducting the Au bump 7 and the input / output terminal 5 are connected to the input / output terminal 5. By ensuring sufficiently on the connection part 5a, it is possible to prevent a poor conduction between the Au bump 7 and the input / output terminal 5, and thus a display defect such as a line defect can be prevented. In addition, although it was set as the structure which provides an opening part in the part by the side of the short side 6b, the structure which provides an opening part in the whole of the short side 6b side may be sufficient.

  In the present embodiment, the input / output terminal 5 extending from the gate line has been described. However, the same effect as described above can be obtained by forming the film wall portion and the concave portion in the input / output terminal on the source line side as well. Can be played.

It is a front view which shows schematic structure of the display apparatus which concerns on this invention. It is a principal part enlarged view in the peripheral region of the display apparatus of FIG. It is sectional drawing in the AA direction of FIG. It is sectional drawing which shows each manufacturing process of the display apparatus of this invention. It is a principal part enlarged view in the modification of this invention.

1 first insulating substrate, 2 second insulating substrate, 3 display area, 4 peripheral area,
5 I / O terminals, 6 Driver LSI, 7 Au bump, 9 ACF,
DESCRIPTION OF SYMBOLS 10 Conductive particle, 12 Insulating film, 13 Passivation film | membrane, 14 Organic film | membrane, 15 Film | membrane wall part, 15a Recessed part, 6a Driver LSI arrangement | positioning area | region, 20 Display apparatus.

Claims (7)

A plurality of input / output terminals extending from a plurality of pixels formed in a display region on the insulating substrate and formed in a peripheral region;
A driver LSI having a plurality of bumps for inputting an external signal to the input / output terminal and driving the pixel;
In the peripheral area of the driver LSI, a film wall is provided so as to surround the plurality of bumps.
The display device, wherein the plurality of bumps are connected to the plurality of input / output terminals by an anisotropic conductive film affixed to the inside of the film wall portion. The display device according to claim 1, wherein the film wall portion is provided inside the driver LSI arrangement region so as to surround the plurality of bumps. 3. The display device according to claim 1, wherein the film wall portion is formed in the same step as a step of forming a film member on a pixel in the display region. The display device according to claim 1, wherein the film wall portion includes at least an organic film. The display device according to claim 4, wherein the film wall portion further includes an insulating film and a passivation film. A plurality of input / output terminals extending from a plurality of pixels formed in a display region on the insulating substrate and formed in a peripheral region;
In a method for manufacturing a display device including a driver LSI having a plurality of bumps for inputting an external signal to the input / output terminal and driving the pixel,
Forming the input / output terminals in a peripheral region of the insulating substrate;
Forming an insulating film in the display region of the insulating substrate, forming a switching element for driving the pixel, sequentially laminating a passivation film and an organic film, and laminating at least an organic film in a peripheral region;
Forming a film wall portion by removing the stacked organic film by etching so as to surround the plurality of bumps in the driver LSI arrangement region in the peripheral region; and
And a step of connecting the plurality of bumps to the plurality of input / output terminals by an anisotropic conductive film affixed to the inside of the film wall. In addition to forming an insulating film and a passivation film in the display region, the method further includes a step of laminating the insulating film and the passivation film in the peripheral region, and surrounding the plurality of bumps in the driver LSI arrangement region in the peripheral region. 7. The method of manufacturing a display device according to claim 6, wherein the film wall is formed by removing an insulating film, a passivation film, and an organic film by etching.

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