JP2008053480A - Printing mask using method of printing mask, and manufacturing method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a printing mask capable of suppressing the resin inflow into a scribe line and the exposure of wiring upon buffer layer printing, and to provide a direction for use of the printing mask and a manufacturing method of a semiconductor device. <P>SOLUTION: This printing mask for printing a resin insulating layer constituting the semiconductor device has a frame 10a to form the mask, and the width a<SB>2</SB>of the surface of the frame 10a facing the printed object side is formed to be smaller than the width of the frame a<SB>1</SB>, or the frame is formed of a plurality of materials having different wettability to the resin for forming the resin insulating layer. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a printing mask, a method of using the printing mask, and a method of manufacturing a semiconductor device, and more particularly, a printing mask for printing an insulating layer constituting the semiconductor device, a method of using the printing mask, and printing. The present invention relates to a method for manufacturing a semiconductor device using a mask.

  The demand for downsizing, thinning, and weight reduction of portable electronic devices such as digital video cameras, digital mobile phones, and notebook personal computers is increasing. While an electronic circuit device in which such a semiconductor device is mounted on a printed wiring board has been realized by 70% reduction year by year, how can the component mounting density on the mounting substrate (printed wiring substrate) be improved? Has been studied and developed as an important issue.

  For example, as a package form of a semiconductor device, a transition from a lead insertion type such as DIP (Dual Inline Package) to a surface mounting type is performed, and furthermore, bumps (projection electrodes) made of solder, gold, or the like are provided on a pad electrode of a semiconductor chip A flip-chip mounting method has been developed in which a face-down connection is made to the wiring board via bumps.

Furthermore, development is progressing into a package of a complicated form called SiP that incorporates passive elements such as inductances and capacitors and incorporates a matching circuit and a filter.
For example, Patent Document 1 discloses a configuration of the above-described SiP-type semiconductor device.

  For example, as a method for manufacturing an active element embedded wafer level SiP, an active element is mounted on a substrate and embedded with an insulating layer made of a photosensitive resin, the insulating layer is patterned, and the active element is formed by electrolytic plating of Cu or the like. A wiring to be connected is formed, and a multi-layer SiP is formed by forming a rewiring layer embedded in the insulating layer by laminating the insulating layer and the wiring in multiple layers.

  Here, if an insulating layer made of a resin and a wiring including a Cu layer are laminated, the wafer is warped. In order to reduce the warpage of the wafer, it is effective to form the insulating layer with a photosensitive resin and remove the insulating layer present in the scribe line when patterning.

  In addition, when the above-described SiP is mounted on a mounting substrate or the like, a buffer layer for stress relaxation is provided on the rewiring of the SiP in order to prevent the SiP from being destroyed by the stress generated between the mounting substrate and the SiP. The formed structure.

The buffer layer is generally formed by printing using a printing mask. For example, the buffer layer is formed by embedding a conductive post having a height of 120 μm and printing the entire surface.
However, full-surface printing increases the above-described warpage of the wafer, causing an adsorption error due to handling of the manufacturing apparatus in the next process, which may cause driving stoppage or damage of the manufacturing apparatus.

  Alternatively, printing of a small amount of resin in gap printing can be repeated until a required film thickness is obtained. However, when printing is performed several times, there is a problem that the resin gradually flows into the scribe line due to the problem of alignment accuracy, and the productivity is poor, so that it is not suitable for mass production.

In the above printing, a frame portion is provided on the mask for printing so that it is not printed on the scribe line. However, since this frame portion cannot be increased in aspect due to plate strength and processability due to laser processing, the mask plate thickness The frame size is limited to 200 μm with respect to 300 μm, and the frame portion of the printing mask becomes wider than the scribe line.
For this reason, the flow of the resin paste into the outer peripheral portion of the SiP is insufficient, and there is a problem that a part of the rewiring embedded in the buffer layer is exposed.

FIG. 12 is a schematic diagram for explaining the problems of the prior art.
A first resin layer 26 and a second resin layer 29 are stacked on the semiconductor substrate 20, and a wiring layer is embedded therein. A conductive post 32 is formed in connection with the wiring layer.
In the above state, the buffer layer is printed on the second resin layer 29 by covering the conductive post 32. Here, the printing mask 15 provided with the frame portion 15a of the pattern for protecting the scribe line SL is used, for example, the frame portion 15a is brought into contact with the second resin layer 29 so that the frame portion 15a covers the scribe line, Insulating resin is supplied and printing is performed to form the buffer layer 11.
After printing, the printing of the buffer layer is completed by removing the printing mask 15 from the scribe line SL.

At this time, a part of the resin that becomes the buffer layer remains on the side of the frame portion 15a of the printing mask 15 and is removed together with the frame portion 15a. Along with this, the shoulder portion 15s of the buffer layer 11 is crushed and the tail portion 11t becomes a long shape. In some cases, the tail portion 11t flows into the scribe line SL, causing warping of the wafer, or of the wiring layer. In some cases, the portion is exposed.
JP 2003-124236 A

  An object of the present invention is to provide a printing mask, a method of using the printing mask, and a method of manufacturing a semiconductor device that can suppress the flow of resin into the scribe line and the exposure of wiring in printing of a buffer layer or the like.

  The printing mask of the present invention is a printing mask for printing a resin insulating layer constituting a semiconductor device, and has a frame portion serving as a mask, and the width of the surface of the frame portion facing the substrate side Is smaller than the width of the frame portion.

  In the printing mask of the present invention, the width of the surface of the frame portion facing the substrate to be printed is smaller than the width of the frame portion in the frame portion serving as the mask.

  The printing mask of the present invention is a printing mask for printing a resin insulating layer constituting a semiconductor device, and has a frame portion serving as a mask, and the frame portion corresponds to a resin serving as the resin insulating layer. It is composed of a plurality of materials having different wettability.

  In the printing mask of the present invention, in the frame portion serving as the mask, the frame portion is composed of a plurality of materials having different wettability with respect to the resin serving as the resin insulating layer.

  The method for using a printing mask of the present invention is a method for using a printing mask for printing a resin insulating layer constituting a semiconductor device, and has a frame portion serving as a mask, and faces the substrate side of the frame portion. Printing using a printing mask formed so that the width of the surface to be formed is smaller than the width of the frame portion, and the surface of the frame portion facing the substrate to be printed is brought into contact with the substrate to be printed. .

  The above-described method of using the printing mask of the present invention uses the printing mask in which the width of the surface of the frame portion facing the substrate to be printed is smaller than the width of the frame portion in the frame portion serving as the mask. Then, the surface of the frame portion facing the substrate to be printed is brought into contact with the substrate to be printed, and the resin insulating layer constituting the semiconductor device is printed.

  The method for using a printing mask of the present invention is a method for using a printing mask for printing a resin insulating layer constituting a semiconductor device, and has a frame portion to be a mask, and the frame portion is the resin insulating layer. Printing is performed by using a printing mask made of a plurality of materials having different wettability with respect to the resin to be used, so that the surface of the frame portion facing the printed material is brought into contact with the printed material.

  The above-described method for using the printing mask of the present invention is such that the frame portion used as the mask is covered with the frame portion by using the printing mask composed of a plurality of materials having different wettability with respect to the resin serving as the resin insulating layer. The surface facing the printed material is brought into contact with the material to be printed, and the resin insulating layer constituting the semiconductor device is printed.

  A method of manufacturing a semiconductor device according to the present invention is a method of manufacturing a semiconductor device packaged including a semiconductor, and includes a step of printing a resin insulating layer constituting the semiconductor device, and the resin insulating layer is formed. In the process, resin insulation is provided on the substrate using a printing mask having a frame portion serving as a mask and having a width of the surface of the frame portion facing the substrate to be printed smaller than the width of the frame portion. It is characterized by printing a layer.

  The method for manufacturing a semiconductor device according to the present invention uses a printing mask that has a frame portion that serves as a mask, and the width of the surface of the frame portion facing the substrate to be printed is smaller than the width of the frame portion. Then, a resin insulating layer constituting the semiconductor device is printed on the substrate and packaged.

  A method of manufacturing a semiconductor device according to the present invention is a method of manufacturing a semiconductor device packaged including a semiconductor, and includes a step of printing a resin insulating layer constituting the semiconductor device, and the resin insulating layer is formed. In the process, a resin insulating layer is formed on the substrate using a printing mask having a frame portion to be a mask, and the frame portion is made of a plurality of materials having different wettability to the resin to be the resin insulating layer. Is printed.

  The manufacturing method of the semiconductor device of the present invention described above uses a printing mask having a frame portion that becomes a mask, and the frame portion is made of a plurality of materials having different wettability with respect to a resin that becomes a resin insulating layer. A resin insulating layer constituting the semiconductor device is printed on the substrate and packaged.

  The printing mask of the present invention can suppress the flow of the resin into the scribe line and the exposure of the wiring in the printing of the buffer layer and the like.

  The method for using the printing mask of the present invention can print a layer such as a resin insulating layer constituting a semiconductor device by suppressing the flow of resin into a scribe line and the exposure of wiring in printing a buffer layer or the like.

  The method for manufacturing a semiconductor device of the present invention suppresses the flow of resin into a scribe line and the exposure of wiring in printing of a buffer layer or the like, and prints a layer such as a resin insulating layer constituting the semiconductor device. Can be manufactured.

  Embodiments of a printing mask, a method of using the same, and a method of manufacturing a semiconductor device using the same according to the present invention will be described below with reference to the drawings.

First Embodiment FIG. 1A is a perspective view of a printing mask according to this embodiment, and FIG. 1B is a sectional view.
The printing mask 10 is a printing mask for printing a resin insulating layer constituting a semiconductor device, and has a frame portion 10a serving as a mask.
Here, at the corner 10b between the surface of the frame portion 10a facing the substrate and the side surface of the frame portion 10a, the corner shape is removed. width a ₂ of the facing surface is formed smaller than the width a ₁ of the frame portion.
Further, in the printing mask 10, a region surrounded by the frame portion 10a is a through opening 10c.

For example, the printing mask of this embodiment is made of SUS having a thickness of 300 μm, and the frame portion has a width of about 200 μm. That is, the width a _{1 of the} frame portion is about 200 μm, and the height b ₁ is about 300 μm.
Here, in the corner 10b of the surface and the frame portion 10a side of the facing the substrate side of the frame portion 10a, 35 [mu] m the width _{a 3} on the surface side facing the substrate side of the frame portion 10a, side surface of the frame part 10a The width b ₂ is cut by 50 μm, and the corners are dropped.
As a result, the width a _{2 of the} surface of the frame 10a facing the substrate is about 130 μm, which is smaller than the width a ₁ (200 μm) of the frame.

  In the printing mask of this embodiment, the width of the frame portion of 200 μm with respect to SUS having a plate thickness of 300 μm cannot be made narrower due to the workability of laser processing. However, it can be manufactured by performing half-etching at a depth of 50 μm from the surface of the mask that contacts the substrate to be printed as described above.

  Next, a method for using a printing mask for forming a buffer layer using the above printing mask and a method for manufacturing a semiconductor device will be described.

First, the semiconductor device according to the present embodiment will be described.
FIG. 2 is a cross-sectional view of a SiP-type semiconductor device according to this embodiment.
For example, a base insulating film 21 made of silicon oxide is formed on the silicon substrate 20. On the base insulating film 21, for example, a first semiconductor chip 24 and a second semiconductor chip 25 having a circuit surface on which active elements are formed are mounted.
The plate thickness of the first semiconductor chip 24 and the second semiconductor chip 25 is, for example, about 25 to 50 μm.

The first semiconductor chip 24 has a configuration in which a pad 24b is formed on the circuit surface of the semiconductor body portion 24a, and an area excluding the pad 24b is covered with a protective layer 24c such as silicon oxide. That is, it is mounted such that the formation surface of the pad 24b faces the upper surface.
The second semiconductor chip 25 has the same configuration as that of the first semiconductor chip 24, and a pad 25b is formed on the circuit surface of the semiconductor body portion 25a, and a region excluding the pad 25b is covered with a protective layer 25c such as silicon oxide. It is mounted face up by a die attach film 25d.

  For example, a TiCu layer is formed in the vicinity of the edge of the mounting position of the first semiconductor chip 24 and the second semiconductor chip 25, which is used for mounting the first semiconductor chip 24 and the second semiconductor chip 25. This is the alignment mark M1.

For example, the first resin layer 26 made of polyimide resin, epoxy resin, acrylic resin, or the like is formed so as to cover the first semiconductor chip 24 and the second semiconductor chip 25.
In the first resin layer 26, openings 26a reaching the pads 24b of the first semiconductor chip 24 and the pads 25b of the second semiconductor chip 25 are formed.
A seed such as TiCu is formed on the first resin layer 26 so as to be integrated with the plug 24 b embedded in the opening 26 a and connected to the pad 24 b of the first semiconductor chip 24 and the pad 25 b of the second semiconductor chip 25. A first wiring composed of the layer 27 and the copper layer 28 is formed.

Further, for example, a second resin layer 29 made of polyimide resin, epoxy resin, acrylic resin, or the like is formed so as to cover the first wirings (27, 28) and the first resin layer 26.
In the second resin layer 29, an opening 29a reaching the first wiring is formed.
A second wiring made of a seed layer 30 such as TiCu and a copper layer 31 is formed on the second resin layer 29 so as to be embedded in the opening 29a and integrated with a plug portion connected to the first wiring. ing.

Further, conductive posts 32 made of copper or the like are formed so as to be connected to the second wiring (30, 31).
An insulating buffer layer 11 made of polyamideimide resin, polyimide resin, epoxy resin, phenol resin, polyparaphenylene benzobisoxazole resin, or the like is formed on the second resin layer 29 in the gap between the conductive posts 32. .
Further, bumps (projection electrodes) 33 are formed so as to protrude from the surface of the buffer layer 11 and connect to the conductive posts 32.

The SiP-type semiconductor device of the present embodiment is a semiconductor device packaged including a semiconductor, and includes an insulating layer including a first resin layer 26 and a second resin layer 29 stacked on the silicon substrate 20. A layer is formed, and a wiring layer including the first wiring (27, 28) and the second wiring (30, 31) is formed by being embedded in the insulating layer.
The first semiconductor chip 24 and the second semiconductor chip 25 are embedded in the insulating layer, and the first wiring (27, 28) and the second wiring (30, 31) are formed on these pad electrodes (24b, 25b). Are connected to the bumps 33 via the conductive posts 32. The wiring layer having the above configuration is a so-called rewiring layer for the first semiconductor chip 24 and the second semiconductor chip 25. It has become.

  Although not shown in the drawing, an electronic circuit including an active element may be formed on the silicon substrate 20 and a wiring layer may be connected.

Next, an embodiment of a method of manufacturing the semiconductor device of the present embodiment and a method of using a printing mask used therefor will be described with reference to FIGS. In the present embodiment, for example, all processes shown in FIGS. 3 to 6 can be performed at the wafer level.
First, as shown in FIG. 3A, for example, a thermal oxidation method, a CVD (chemical vapor deposition) method or a sputtering method is formed on a silicon substrate 20 having a thickness of 725 μm and separated by a scribe line SL. A base insulating film 21 made of silicon oxide or the like is formed by, for example.

Next, for example, a TiCu layer (Ti is 300 nm, Cu is 300 nm) is formed on the entire surface of the upper layer of the base insulating film 21 by sputtering to form an alignment mark M1 for semiconductor chip mounting.
The alignment mark M1 is, for example, an L-shaped pattern at a location 50 μm away from the edge of the semiconductor chip mounting region (CP1, CP2), and is formed on one or two sides depending on the mounting direction.

Next, for example, in the first semiconductor chip mounting region, the pad 24b is formed on the circuit surface on which the active element of the semiconductor body portion 24a is formed in a separate process in advance, and the region excluding the pad 24b is silicon oxide or the like The first semiconductor chip 24 covered with the protective layer 24c is mounted with the die attach film 24d face up, that is, with the formation surface of the pad 24b facing the upper surface.
After the first semiconductor chip 24 is formed up to the protective film 24c, the back surface side is polished with a # 2000 wheel to a thickness of 50 μm.
Further, the die attach film 24d is laminated under the conditions of a speed of 10 mm / min, a pressure of 10 N / cm, and a temperature of 65 ° C. After the lamination, the die attach film is diced under the conditions of 4000 rpm and a feed speed of 10 mm / sec. The first semiconductor chip 24 is mounted by recognizing the alignment mark M1 and mounting the first semiconductor chip by thermocompression bonding under the conditions of, for example, a load of 3.2 N, a temperature of 160 ° C., and a time of 2 seconds in a face-up state.

On the other hand, for example, in the second semiconductor chip mounting region, the second semiconductor chip 25 is mounted in the same manner as the first semiconductor chip.
The first semiconductor chip 24 and the second semiconductor chip 25 may be the same or have different functions.

Next, for example, an insulating material such as a polyimide resin, a phenol resin, an epoxy resin, a silicone-modified polyimide resin, a BCB resin, or a PBO resin is supplied by a spin coating method or a printing method, and the first semiconductor chip 24 and the second semiconductor The first resin layer 26 covering the chip 25 is formed so as to have a film thickness of about 50 μm after curing.
In the case of a photosensitive polyimide resin, for example, the film is formed under the following conditions.
Spin coating: 1000 rpm (30 seconds) + 2000 rpm (40 seconds) + 1000 rpm (10 seconds) + 1500 rpm (10 seconds)
Pre-bake: 90 ° C (120 seconds) + 100 ° C (120 seconds)

Next, for example, the first resin layer 26 is polished from the upper surface by about 15 μm in order to flatten the step due to the presence or absence of the semiconductor chip.
Next, pattern exposure and development are performed at an exposure amount of 125 mJ / cm ² , and openings 26 a reaching the pads 24 b of the first semiconductor chip 24 and the pads 25 b of the second semiconductor chip 25 are formed in the first resin layer 26. The size of the opening 26a is, for example, about 50 μm in diameter. At this time, the resin in the scribe line SL is also removed.
After the development, post-curing treatment at 300 ° C. (60 minutes) is performed to cure the first insulating layer 26.

  Next, for example, a descum treatment is performed, a pretreatment etching of sputtering is performed, and the inside of the opening 26a of the first resin layer 26 is further coated by sputtering to form a TiCu film (for example, Ti is 600 nm, Cu is 600 nm) on the entire surface. The seed layer 27 is formed as a film.

  Next, for example, a resist film having a pattern for preventing plating from being formed outside the opening 16a and the first wiring formation region formed in the first resin layer 16 is formed, and the seed layer 27 is used as one electrode. Copper is plated by electrolytic plating, and a copper layer 28 is formed in the opening 26a formed in the first resin layer 26 and the formation region of the first wiring.

  Next, for example, the seed layer 27 is etched using the copper layer 28 as a mask to form a first wiring composed of the seed layer 27 and the copper layer 28.

Next, for example, a photosensitive insulating material such as polyimide resin is supplied by a spin coating method or the like to form the second resin layer 29. For example, it is formed to have a film thickness of 78 μm after curing.
In the case of a photosensitive polyimide resin, for example, the film is formed under the following conditions.
Spin coating: 7000 rpm (25 seconds) + 1000 rpm (125 seconds) + 1000 rpm (10 seconds) + 1500 rpm (10 seconds)
Pre-baking: 60 ° C (240 seconds) + 90 ° C (240 seconds) + 110 ° C (120 seconds)

Next, for example, pattern exposure and development are performed at an exposure amount of 300 mJ / cm ² , and an opening 29 a reaching the second wiring is formed in the second resin layer 29. The resin in the scribe line SL is also removed.
After the development, post-curing treatment at 300 ° C. (60 minutes) is performed to cure the second resin layer 29.

  Next, for example, a descum treatment is performed, a pretreatment etching for sputtering is performed, and the inside of the opening 29a of the second resin layer 29 is further coated by sputtering to form a TiCu film (for example, Ti is 160 nm and Cu is 600 nm). A seed layer 30 is formed by film formation.

Next, for example, a resist film is formed to prevent plating other than the opening 29a and the second wiring formation region formed in the second resin layer 29, and electrolytic plating using the seed layer 30 as one electrode. Processing is performed to form a copper layer 31.
Next, a resist film having openings for conductive posts is patterned, and an electrolytic plating process using the seed layer 30 as one electrode is performed to form conductive posts 32. The conductive post 32 has a diameter of 250 μm and a height of 80 μm, for example.

Next, the seed layer is etched by using the conductive post 32 and the copper layer 31 as a mask to form a second wiring composed of the seed layer 30 and the copper layer 31 and a conductive post formed thereon.
Further, the alignment mark M2 is formed by depositing a copper layer as a second wiring in a predetermined pattern also at the intersection of the scribe lines.
As described above, the configuration as shown in FIG.

Next, as shown in FIG. 3B, for example, the frame portion 10a of the printing mask 10 protects the scribe line SL, and the frame portion 10a is in contact with the first resin layer 26. Using a squeegee SQ or the like, the resin 11a such as epoxy resin, polyimide resin, silicone resin, polyamideimide resin, polyimide resin, phenol resin or polyparaphenylene benzobisoxazole resin is supplied and printed, and the conductive post 32 The insulating buffer layer 11 is formed with a film thickness that completely covers the film.
The gap between the squeegee SQ and the printing mask 10 is, for example, 150 μm.

  Next, as shown in FIG. 3C, the printing of the buffer layer 11 is completed by removing the printing mask 10 from the scribe line SL.

Here, the step of forming the buffer layer will be described in more detail.
First, as shown in FIG. 4A, for example, the printing mask is arranged such that the frame portion 10a of the printing mask 10 protects the scribe line SL.
The width W1 of the scribe line SL between the first resin layers 26 is about 96 μm, and the width W2 of the scribe line SL between the second resin layers 29 is about 196 μm. width _{a 1} of a frame portion as illustrated in the 200μm approximately, the surface of the frame portion 10a of the width _{a 2} of _the surface facing the printing object side of the frame portion 10a is on the order of 130 .mu.m, in the substrate side of the frame portion 10a If it arrange | positions so that the surface to perform may cover the upper surface of the 1st resin layer 26, it will be in the state shown in FIG.4 (b).
That is, as described above, in the corner 10b between the surface of the frame portion 10a facing the substrate and the side surface of the frame portion 10a, the corner shape is removed, and the corner is dropped, The frame portion 10a itself is wider than the scribe line, and the frame portion 10a can be brought into contact with the upper surface of the first resin layer 26 without being in the end shape of the second resin layer 29.
For example, a range of about 5 mm from the outer periphery of the wafer is set as a forbidden area, and a pattern is taken for a pattern that is missing in this area, and the frame portion is aligned.

Next, as shown in FIG. 5A, the resin is supplied, and the resin is pushed into the opening of the printing mask using the squeegee SQ to form the buffer layer 11.
Here, for example, the resin paste has an Nv value of 26, a viscosity of 110 Pa · s, a single resin supply rate of 15 g, a squeegee of 90 ° in J, a speed of 5 mm / sec, a printing pressure of 0 MPa, and a back pressure. Is about 0.07 MPa.
For example, the gap between the squeegee SQ and the printing mask 10 is set to about 150 μm so as to obtain a film thickness necessary for the buffer layer, so that the surface is higher by about 150 μm than the upper end of the printing mask 10. The buffer layer 11 is formed.
Here, since the surface of the frame portion 10a facing the substrate side is on the upper surface of the first resin layer 26, it is possible to prevent the resin from getting around the scribe line SL during printing.

  Here, in the above-described printing mask, half-etching is performed at a depth of 50 μm from the surface of the mask in contact with the substrate to form the shape as described above. It is designed as an amount to reach. This is ½ of the scribe line of the second layer when the substrate is composed of insulating films having different dimensions.

  In the frame portion 10a of the printing mask 10 described above, the width of the surface in contact with the substrate to be printed is 130 μm because the alignment accuracy of the scribe line of the insulating film and the printing machine is ± 15 μm, so the width of the scribe line (about 96 μm) About 30 μm.

Next, as shown in FIG. 5B, the printing of the buffer layer 11 is completed by removing the printing mask 10 from the scribe line SL.
At this time, a part of the resin (residual paste 11r) serving as the buffer layer remains on the side surface of the frame portion 10a and the removed corner portion 10b of the printing mask 10 and is removed together with the frame portion 10a. The influence on the shoulder portion 11s and the tail portion 11t of the layer 11 can be made smaller than in the past, and the flow of the resin to the scribe line in printing of the buffer layer or the like can be suppressed, and the exposure of the wiring can be suppressed. Can be formed.

  After the buffer layer is formed as described above, as shown in FIG. 6A, for example, after the buffer layer 11 is cured with resin, the conductive post 32 is cued by grinding. The conditions at this time are set to 3500 rpm and 0.5 mm / second using, for example, a # 600 wheel.

  Next, as shown in FIG. 6B, bumps (projection electrodes) 33 are formed by, for example, mounting solder balls or printing solder paste so as to connect to the conductive posts 32, for example.

Next, as shown in FIG. 6C, for example, the silicon substrate 20 is thinned to a desired thickness from the back surface side of the silicon substrate 20 by BGR, and the silicon substrate 20 is diced by the blade B to be cut into thin pieces.
In particular, in the dicing process, the substrate can be positioned by referring to the alignment mark M2 on the scribe line. For example, the position of the scribe line is automatically recognized and dicing is automatically performed. This makes it possible to reduce the manufacturing cost.
Thus, a SiP-type semiconductor device having the configuration shown in FIG. 2 can be formed.

When the buffer layer is formed by using the printing mask according to the present embodiment, the resin does not wrap around the contact surface of the frame portion with the printing material, so that cleaning is not necessary during continuous printing.
After supplying 15 g of resin paste, continuous printing is possible with a very small addition.

In the method of using the printing mask according to the above-described embodiment and the method of manufacturing the semiconductor device by which the buffer layer is formed, the buffer layer can be formed by one printing, so that productivity is improved.
In addition, since the resin does not wrap around the contact surface of the frame with the substrate, continuous printing is possible.
Moreover, exposure of the wiring part in the vicinity of the scribe line can be prevented.

Second Embodiment FIG. 7A is a perspective view of a printing mask according to this embodiment, and FIG. 7B is a sectional view.
The printing mask 12 is a printing mask for printing a resin insulating layer constituting the semiconductor device, and has a frame portion serving as a mask.
Here, the frame part is comprised from the several material from which the wettability with respect to resin used as a resin insulating layer differs.
For example, the first frame portion 12a made of a member having low wettability with respect to the resin, which is a resin insulating layer disposed on the opposite side of the surface of the frame portion facing the substrate, and the surface of the frame portion facing the substrate side And a second frame portion 12b made of a member having high wettability with respect to the resin to be the resin insulating layer disposed on the side. That is, the first frame portion 12a has a high surface tension with respect to the resin that becomes the resin insulating layer, and the second frame portion 12b has a low surface tension with respect to the resin that becomes the resin insulating layer.

For example, the first frame portion 12a is made of stainless (SUS) material, the width _{a 1} is 200 [mu] m, a height _{b 1} 300 [mu] m, the second frame portion 12b are made of polyimide, the width _{a 2} 130～150Myuemu it is 150μm height _{b 2.}
As described above, the width a ₂ of the surface facing the printing object side of the frame portion is formed smaller than the width a ₁ of the frame portion.
In the printing mask 12, a region surrounded by the frame portion is a through opening 12 c.

Next, a method for using a printing mask for forming a buffer layer using the above printing mask and a method for manufacturing a semiconductor device will be described.
As shown in FIG. 8A, for example, for printing, the scribe line SL is protected from the second frame portion 12b side of the printing mask 12 including the first frame portion 12a and the second frame portion 12b. Place the mask.

The width W1 of the scribe line SL between the first resin layers 26 is about 96 μm, and the width W2 of the scribe line SL between the second resin layers 29 is about 196 μm. The width a ₂ of the second frame portion on the surface facing the substrate to be printed as shown in FIG. ₂ is about 130 μm, and the end portion of the second frame portion 10 a is placed on the upper surface of the first resin layer 26. Then, the state shown in FIG.
That is, as described above, the second width a ₂ , which is the surface of the frame portion facing the substrate, is formed to be smaller than the width a ₁ of the first frame portion. Regardless of the shape, the printing mask can be brought into contact with the upper surface of the first resin layer 26.

Next, as shown in FIG. 9A, the resin is supplied, and the resin is pushed into the opening of the printing mask using the squeegee SQ to form the buffer layer 11.
For example, the gap between the squeegee SQ and the printing mask 12 is set to about 150 μm so as to obtain a film thickness necessary for the buffer layer, so that the surface is higher by about 150 μm than the upper end of the printing mask 12. The buffer layer 11 is formed.
Here, since the surface of the frame portion 10a facing the substrate side is on the upper surface of the first resin layer 26, it is possible to prevent the resin from getting around the scribe line SL during printing.

Next, as shown in FIG. 9B, the printing of the buffer layer 11 is completed by removing the printing mask 12 from the scribe line SL.
At this time, the polyimide resin paste has a smaller surface tension than the polyimide second frame portion 12b, and the drop force exceeds the amount of the residual paste 11r on the frame portion.
Since there is almost no residual paste, the influence on the shoulder portion 11s and the tail portion 11t of the buffer layer 11 can be made smaller than before, and the flow of resin to the scribe line is suppressed in printing the buffer layer and the like, and the wiring is exposed. Thus, the buffer layer can be formed.

When the buffer layer is formed by using the printing mask according to the present embodiment, the resin does not wrap around the contact surface of the frame portion with the printing material, so that cleaning is not necessary during continuous printing.
After supplying 15 g of resin paste, continuous printing is possible with a very small addition.

In the method of using the printing mask according to the above-described embodiment and the method of manufacturing the semiconductor device by which the buffer layer is formed, the buffer layer can be formed by one printing, so that productivity is improved.
In addition, since the resin does not wrap around the contact surface of the frame with the substrate, continuous printing is possible.
Moreover, exposure of the wiring part in the vicinity of the scribe line can be prevented.

FIG. 10 is a schematic cross-sectional view of another example of a printing mask.
In the mask 13 for printing, the member (13a, 13c) with low wettability with respect to resin used as the resin insulating layer arrange | positioned on the surface side which faces the to-be-printed side of a frame part, and the said surface, and wettability is low. It is comprised including the member 13b with high wettability with respect to resin used as the resin insulation layer arrange | positioned between the members (13a, 13c). For example, the low wettability members (13a, 13c) are made of a stainless material, and the high member 13b is made of a polyimide material.
The members (13a, 13c) having low wettability with respect to the resin serving as the resin insulating layer are formed wider than the high member 13b, and the portion of the high member 13b is a concave-shaped side surface. Resin can accumulate in this concave shape, and the plate slippage is further improved.

FIG. 11 is a schematic cross-sectional view of still another example of the printing mask.
In the mask 14 for printing, the member (14a, 14c) with low wettability with respect to resin used as the resin insulating layer arrange | positioned on the surface side which faces the to-be-printed side of a frame part, and the said surface, and wettability is low. And a member 14b having high wettability with respect to a resin to be a resin insulating layer disposed between the members (14a, 14c). For example, the low wettability members (14a, 14c) are made of a stainless material, and the high member 14b is made of a polyimide material.
The members (14a, 14c) having low wettability with respect to the resin serving as the resin insulating layer are formed to be narrower than the high member 14b, and the high member 14b is a side surface protruding in a convex shape. By projecting in a convex shape, it is possible to further suppress wraparound of the resin with respect to the contact surface of the frame portion with the substrate.

The present invention is not limited to the above description.
For example, passive elements such as inductances and capacitors may be formed on the first and second wirings as SiP.
In the embodiment, two layers of wiring (first wiring and second wiring) are formed as the wiring in the insulating layer, but the present invention is not limited to this. The number of resin insulation layers is not limited to the number of layers as described above.
In addition, various modifications can be made without departing from the scope of the present invention.

  The semiconductor device of the present invention can be applied to a semiconductor device in a system in package form.

  The semiconductor device manufacturing method of the present invention can be applied to a system-in-package semiconductor device manufacturing method.

FIG. 1A is a perspective view of a printing mask according to the first embodiment of the present invention, and FIG. 1B is a cross-sectional view. FIG. 2 is a cross-sectional view of the SiP-type semiconductor device according to the first embodiment of the present invention. 3A to 3C are cross-sectional views illustrating manufacturing steps of the method for manufacturing a semiconductor device according to the first embodiment of the present invention. FIG. 4A and FIG. 4B are cross-sectional views illustrating manufacturing steps of the method for manufacturing the semiconductor device according to the first embodiment of the present invention. FIG. 5A and FIG. 5B are cross-sectional views illustrating manufacturing steps of the method for manufacturing the semiconductor device according to the first embodiment of the present invention. 6A to 6C are cross-sectional views illustrating manufacturing steps of the method for manufacturing the semiconductor device according to the first embodiment of the present invention. FIG. 7A is a perspective view of a printing mask according to the second embodiment of the present invention, and FIG. 7B is a cross-sectional view. FIG. 8A and FIG. 8B are cross-sectional views showing the manufacturing process of the semiconductor device manufacturing method according to the second embodiment of the present invention. FIG. 9A and FIG. 9B are cross-sectional views illustrating manufacturing steps of a method for manufacturing a semiconductor device according to the second embodiment of the present invention. FIG. 10 is a sectional view of another example of a printing mask according to the second embodiment of the present invention. FIG. 11 is a cross-sectional view of still another example of a printing mask according to the second embodiment of the present invention. FIG. 12 is a schematic diagram for explaining the problems of the prior art.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Printing mask, 10a ... Frame part, 10b ... Corner, 10c ... Through-opening part, 11 ... Buffer layer, 11r ... Residual paste, 11s ... Shoulder part, 11t ... Tail part, 12 ... Printing mask, 13 ... Printing Mask 13a: Highly wettable member 13b: Low wettable member 13c: Highly wettable member 14: Printing mask 14a: Highly wettable member 14b: Low wettable member 14c ... member with high wettability, 20 ... silicon substrate, 21 ... base insulating film, 24 ... first semiconductor chip, 24a ... semiconductor body portion, 24b ... pad, 24c ... protective layer, 24d ... die attach film, 25 ... second Semiconductor chip, 25a ... Semiconductor body portion, 25b ... Pad, 25c ... Protective layer, 25d ... Die attach film, 26 ... First resin layer, 26a ... Opening, 27 ... Seed layer, 28 Copper layer, 29 ... second resin layer, 29a ... opening 30 ... seed layer, 31 ... copper layer, 32 ... conductive posts, 33 ... bumps, B ... blade, M1, M2 ... alignment marks

Claims (24)

A printing mask for printing a resin insulating layer constituting a semiconductor device,
Having a frame to be a mask,
A printing mask, wherein a width of a surface of the frame portion facing the substrate is smaller than a width of the frame portion. 2. The printing mask according to claim 1, wherein the rectangular shape is removed from a surface of the frame portion facing the substrate, a side surface and a corner of the frame portion. 2. The printing mask according to claim 1, wherein the frame portion is made of a plurality of materials having different wettability with respect to the resin to be the resin insulating layer. A member having low wettability with respect to the resin to be the resin insulating layer disposed on the opposite side of the surface of the frame portion facing the substrate;
The printing apparatus according to claim 1, further comprising: a member having high wettability with respect to a resin to be the resin insulating layer disposed on a surface side facing the substrate to be printed of the frame portion. Mask. A member having low wettability with respect to the resin to be the resin insulating layer disposed on the surface side facing the substrate side of the frame portion and on the opposite side of the surface;
The printing mask according to claim 1, further comprising: a member having high wettability with respect to the resin to be the resin insulating layer disposed between the members having low wettability. A printing mask for printing a resin insulating layer constituting a semiconductor device,
Having a frame to be a mask,
The printing mask, wherein the frame portion is made of a plurality of materials having different wettability with respect to the resin to be the resin insulating layer. A member having low wettability with respect to the resin to be the resin insulating layer disposed on the opposite side of the surface of the frame portion facing the substrate;
7. The printing according to claim 6, further comprising: a member having high wettability with respect to a resin to be the resin insulating layer disposed on a surface side facing the printing material side of the frame portion. Mask. A member having low wettability with respect to the resin to be the resin insulating layer disposed on the surface side facing the substrate side of the frame portion and on the opposite side of the surface;
The printing mask according to claim 6, further comprising: a member having high wettability with respect to a resin to be the resin insulating layer disposed between the members having low wettability. A method of using a printing mask for printing a resin insulating layer constituting a semiconductor device,
Using a printing mask having a frame portion serving as a mask, the width of the surface facing the substrate side of the frame portion being smaller than the width of the frame portion, on the substrate side of the frame portion A method for using a printing mask, wherein the printing is performed by bringing a surface to be contacted into contact with the substrate. The printing mask according to claim 9, wherein the printing mask has a shape in which the corner shape is removed from a surface of the frame portion facing the substrate, a side surface and a corner of the frame portion. How to use the mask. The method for using a printing mask according to claim 9, wherein in the printing mask, the frame portion is made of a plurality of materials having different wettability with respect to the resin to be the resin insulating layer. In the printing mask, a member having low wettability with respect to a resin to be the resin insulating layer disposed on the opposite side of the surface of the frame portion facing the substrate, and a surface of the frame portion facing the substrate The method for using a printing mask according to claim 9, comprising a member having high wettability with respect to the resin to be the resin insulating layer disposed on the surface side. In the printing mask, a member having low wettability with respect to a resin to be the resin insulating layer disposed on the surface side of the frame portion facing the substrate and the opposite side of the surface, and a member having low wettability The method for using a printing mask according to claim 9, comprising a member having high wettability with respect to the resin to be the resin insulation layer disposed between the layers. A method of using a printing mask for printing a resin insulating layer constituting a semiconductor device,
Using a printing mask that has a frame portion that serves as a mask, and the frame portion is made of a plurality of materials that have different wettability with respect to the resin that serves as the resin insulating layer, A method for using a printing mask, wherein printing is performed by bringing a surface to be contacted into contact with the substrate. In the printing mask, a member having low wettability with respect to a resin to be the resin insulating layer disposed on the opposite side of the surface of the frame portion facing the substrate, and a surface of the frame portion facing the substrate The method for using a printing mask according to claim 14, comprising a member having high wettability with respect to the resin to be the resin insulating layer disposed on the surface side of the printing mask. In the printing mask, a member having low wettability with respect to a resin to be the resin insulating layer disposed on the surface side of the frame portion facing the substrate and the opposite side of the surface, and a member having low wettability The method for using a printing mask according to claim 14, comprising a member having high wettability with respect to the resin to be the resin insulating layer disposed between the layers. A method of manufacturing a semiconductor device packaged including a semiconductor,
Having a step of printing a resin insulating layer constituting the semiconductor device;
In the step of printing the resin insulating layer, a printing mask having a frame portion serving as a mask and having a width of the surface facing the substrate to be printed is smaller than the width of the frame portion is used. A method for manufacturing a semiconductor device, comprising: printing a resin insulating layer on a substrate. 18. The semiconductor device according to claim 17, wherein the printing mask has a shape in which the angular shape is removed from a surface of the frame portion facing the substrate, a side surface of the frame portion, and corners. Manufacturing method. The method for manufacturing a semiconductor device according to claim 17, wherein, in the printing mask, the frame portion is made of a plurality of materials having different wettability with respect to the resin to be the resin insulating layer. In the printing mask, a member having low wettability with respect to a resin to be the resin insulating layer disposed on the opposite side of the surface of the frame portion facing the substrate, and a surface of the frame portion facing the substrate The method for manufacturing a semiconductor device according to claim 17, further comprising a member having high wettability with respect to the resin to be the resin insulating layer disposed on the surface side. In the printing mask, a member having low wettability with respect to a resin to be the resin insulating layer disposed on the surface side of the frame portion facing the substrate and the opposite side of the surface, and a member having low wettability The method for manufacturing a semiconductor device according to claim 17, further comprising a member having high wettability with respect to the resin to be the resin insulating layer disposed between the layers. A method of manufacturing a semiconductor device packaged including a semiconductor,
Having a step of printing a resin insulating layer constituting the semiconductor device;
In the step of printing the resin insulating layer, using a printing mask that has a frame portion serving as a mask, and the frame portion is composed of a plurality of materials having different wettability with respect to the resin serving as the resin insulating layer. A method of manufacturing a semiconductor device, comprising: printing a resin insulating layer on a substrate. In the printing mask, a member having low wettability with respect to a resin to be the resin insulating layer disposed on the opposite side of the surface of the frame portion facing the substrate, and a surface of the frame portion facing the substrate 23. The method of manufacturing a semiconductor device according to claim 22, further comprising: a member having high wettability with respect to the resin to be the resin insulating layer disposed on the surface side. In the printing mask, a member having low wettability with respect to a resin to be the resin insulating layer disposed on the surface side of the frame portion facing the substrate and the opposite side of the surface, and a member having low wettability 23. The method of manufacturing a semiconductor device according to claim 22, further comprising a member having high wettability with respect to the resin to be the resin insulating layer disposed between the layers.

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