JP2008042160A - Sealing structure of side-emission light-emitting diode - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an improved sealing structure of a light-emitting diode. <P>SOLUTION: The sealing structure of the light-emitting diode is a sealing structure of a side-emission light-emitting diode. The sealing structure of the side-emission light-emitting diode includes a base section, two electrodes, a light-emission diode chip and a sealing material. Of the above components, the base section has a recess. The two electrodes are provided on a bottom of the recess. The light-emission diode chip is provided on the bottom of the recess and also in electrical connection with the two electrodes. In the above configuration, the substrate of the light-emitting diode chip is ≥140 μm in thickness. The light-emitting diode chip is sealed by filling up the recess with the sealing material. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a light emitting diode (LED), and more particularly to a side emission type light emitting diode sealing structure.

  A light-emitting diode is a junction diode, and mainly includes a p-type epitaxial layer and an n-type epitaxial layer on a semiconductor substrate. After the epitaxial structure is formed, the chip is cut, subsequently fixed on the panel, bonded, and finally sealed to form a light emitting element of a light emitting diode. Generally, the sealing material used for a light emitting diode is an epoxy resin (Epoxy).

  There are many types of light-emitting diodes, and their applications are wide-ranging, making them an important tool indispensable for modern life. Typical light emitting diodes are applied to, for example, indicator lamps for home appliances, acoustics and instruments, light sources for facsimiles, barcode readers and optical mice, and backlight modules in mobile phones, PDAs (personal digital assistants), and liquid crystal displays. When used in electronic products, it is mainly used for lighting and indicators.

  With the development of electronic products such as mobile phones, PDAs, and backlight modules, the demand for light emitting efficiency of light emitting diodes is increasing. Therefore, how to fully utilize the light emitted from the LED is one of the important issues to be considered at present. Conventionally, there has been no method for improving the luminance of the LED other than changing the sealing structure of the LED or changing the structure of the LED chip. However, when the LED sealing structure is changed, for example, the whole brightness is limited by covering the chip with a sealing material having a large refractive index. In the process of transmitting light, for example, the light is absorbed by a partial structure of the LED chip such as a semiconductor epitaxial structure or an electrode in the LED chip or a partial material used for the main body, and the usage rate of the light decreases. End up. Therefore, even if a sealing material having a large refractive index is used, the overall luminance cannot be significantly improved. However, even if the structure of the LED chip is changed, for example, the surface of the LED chip is roughened, a different epitaxial material is used, or a reflective structure is formed on the bottom of the LED chip, the LED chip in the subsequent process is sealed. At this time, factors such as the light emission position of the LED chip or the shape of the light emitted from the LED chip (light pattern) affect the overall luminance of the sealed LED. Thus, the overall luminance of the light emitting diode sealing structure could not be further improved. Therefore, there is no doubt that it is an extremely difficult technical challenge if it is desired to manufacture a sealing structure for a high-intensity light emitting diode.

  Therefore, there is a need to provide an improved light emitting diode sealing structure to solve the above problems.

  According to one embodiment of the present invention, a side emission type diode sealing structure is provided. This side emission type light emitting diode sealing structure includes a base portion, two electrodes, a light emitting diode chip, a sealing material, and a lead frame. Of these, the base portion has a recess. The two electrodes are provided at the bottom of the recess. The light emitting diode chip is provided at the bottom of the recess and is electrically connected to the two electrodes. Among these, the thickness of the substrate of the light emitting diode chip is thicker than 140 μm. In one embodiment of the present invention, the thickness of the substrate is 140 μm to 400 μm. The light emitting diode chip is sealed by filling the recess with the above-described sealing material. The lead frame is provided on both sides of the base portion and is electrically connected to the two electrodes.

  In one embodiment of the present invention, a reflection layer may be provided on the inner wall of the recess of the base portion according to needs in order to further increase the luminance.

  Therefore, as can be understood from the embodiments of the present invention described above, the sealing structure of the side emission type light emitting diode according to the present invention has high luminous efficiency and can improve the luminance by about 30%. In addition, in the present invention, since the light emission amount on the side surface of the LED chip is increased using a thick substrate, not only high light emission efficiency but also a light emitting diode sealing structure with a small volume can be obtained.

  The present invention provides an improved sealing structure for a light emitting diode in order to increase luminance. Please refer to FIG. Here, a schematic view of a cross-sectional structure of a light-emitting diode sealing structure is shown. Please refer to FIG. 2 at the same time. This shows a schematic cross-sectional view along line I-I 'in FIG. In FIG. 1, a light emitting diode sealing structure 100 includes a base portion 102, two electrodes 104a and 104b, a lead frame 106, a light emitting diode chip 108, two lead wires 110a and 110b, and a sealing material. 112. Of these, the base portion 102 has a recess 114. The material of the base portion 102 can be, for example, epoxy resin, glass fiber, titanium oxide, calcium oxide, liquid crystal polymer, or ceramic.

  The two electrodes 104 are provided at the bottom of the recess 114. In one embodiment of the present invention, the two electrodes 104 can be divided into a first electrode 104a and a second electrode 104b, and the first electrode 104a and the second electrode 104b are insulated from each other. Yes. The lead frame 106 is provided on both sides of the base portion 102 and is electrically connected to the two electrodes 104. Of these, the material of the two electrodes 104 can be, for example, gold, silver, copper, platinum, aluminum, tin, or magnesium.

  The light emitting diode chip 108 is provided at the bottom of the recess 114, and is electrically connected to the first electrode 104a and the second electrode 104b by lead wires 110a and 110b, respectively. In one embodiment of the present invention, the light emitting diode chip 108 is provided on the first electrode 104a. In one embodiment of the present invention, a reflection layer (not shown) may be provided on the inner wall of the recess 114 of the base portion 102 to further increase the luminance.

  The sealing material 112 is filled in the recess 114 of the base portion 102 to seal the light emitting diode chip 108. Among these, the material of the sealing material 112 can be, for example, epoxy resin (Epoxy), acrylic, or silicon.

  Next, please refer to FIG. Here, the cross-sectional enlarged schematic diagram of the light-emitting diode chip in FIG. 1 is shown. In FIG. 3, the thickness of the substrate 108a of the light emitting diode chip 108 is 140 μm or more. In one embodiment of the present invention, the thickness of the substrate 108a is 140 μm to 400 μm. In other embodiments, 190 μm to 240 μm is more preferable. The material of the substrate 108a may be, for example, sapphire or silicon carbide.

  Still referring to FIG. Since the thickness of the substrate 108a is 140 μm, that is, the height of the side light exit of the light emitting diode chip 108 is higher than 140 μm, when the light 109 is generated in the active layer 108b of the light emitting diode chip 108, The amount of light exiting through the side light exit is increased. Therefore, after the LED sealing structure is completed, the light emission amount of the light-emitting diode chip 108 is significantly improved, so that a light-emitting diode sealing structure having high light emission efficiency can be obtained.

  Since the light emission amount in the light emitting diode chip 108 of the present invention is greatly improved, the light emitting diode chip 108 is sealed on a base portion having a small recess according to needs, thereby providing a sealing structure. It can be downsized. As a result, not only the overall light emission efficiency is not affected, but also a thin and light light emitting diode sealing structure can be obtained. In another embodiment of the present invention, as shown in FIG. 2, the upper width 114a of the recess 114 may be 1.2 cm or less, more preferably 0.3 cm to 0.8 cm.

  Thereafter, a luminance test of the light emitting diode sealing structure 100 was performed. As can be understood from the results in Table 1, when the thickness of the substrate 108a in the light emitting diode chip 108 is increased from 140 μm to 400 μm, the luminance of the light emitting diode sealing structure can be improved by about 10% to 30%.

  Therefore, as can be understood from the above analysis, the light emitting diode sealing structure of the present invention has high luminous efficiency, and its luminance can be improved by about 10% to 30%. In the present invention, since the light emission amount on the side surface of the light emitting diode chip is improved by using a thick substrate, not only high light emission efficiency but also a light emitting diode sealing structure with a small volume is obtained. be able to.

  Certainly, the preferred embodiment of the present invention has been disclosed as described above. However, this is not intended to limit the present invention, and those skilled in the art will recognize various embodiments without departing from the spirit and scope of the present invention. Accordingly, the scope of protection of the present invention shall be regarded as limited by the scope of the appended claims.

In order that the above and other objects, features, advantages and embodiments of the present invention may be more clearly understood, the following detailed description of the accompanying drawings is presented as follows.
It is the schematic which shows the cross-section of the sealing structure of a light emitting diode. It is the schematic which shows the cross section along line II 'in FIG. FIG. 2 is an enlarged schematic view showing a cross section of the light emitting diode chip in FIG. 1.

Explanation of symbols

  100 light-emitting diode sealing structure, 102 base portion, 104 two electrodes, 104a first electrode, 104b second electrode 104b, 106 lead frame, 108 light-emitting diode chip, 108a substrate, 108b active layer, 109 light, 110a 110b lead wire, 112 sealing material, 114 recess, 114a top width

Claims (10)

A side emission type light emitting diode sealing structure, wherein the side emission type light emitting diode sealing structure is:
A base portion having a recess;
Two electrodes provided in the bottom of the recess;
A light-emitting diode chip provided on the bottom of the recess and electrically connected to the two electrodes of the plurality of electrodes, the thickness of the substrate being 140 μm or more;
A sealing structure for a side emission type light emitting diode, comprising: a sealing material that fills the recess and seals the light emitting diode chip.   2. The side emission type light emitting diode sealing structure according to claim 1, wherein the thickness of the substrate is 140 μm to 400 μm.   3. The side emission type light emitting diode sealing structure according to claim 2, wherein the thickness of the substrate is 190 μm to 240 μm.   2. The side emission type light emitting diode sealing structure according to claim 1, wherein an upper width of the concave portion is 1.2 cm or less.   5. The side emission type light emitting diode sealing structure according to claim 4, wherein an upper width of the concave portion is 0.3 cm to 0.8 cm.   2. The side emission type light emitting diode sealing structure according to claim 1, further comprising a reflection layer provided around the inner wall of the concave portion of the base portion.   2. The side surface according to claim 1, wherein a material of the base portion is selected from an epoxy resin, glass fiber, titanium oxide, calcium oxide, liquid crystal polymer, ceramics, and any combination of the materials. The sealing structure of the emission type light emitting diode.   The side emission type according to claim 1, wherein the material of the plurality of electrodes is selected from the group consisting of gold, silver, copper, platinum, aluminum, tin, magnesium and any combination thereof. Light-emitting diode sealing structure.   The side emission type light emitting diode sealing structure according to claim 1, wherein a material of the substrate is sapphire or silicon carbide.   2. The side emission type light emitting diode sealing structure according to claim 1, further comprising a lead frame provided on an outer edge of the base portion and electrically connected to the plurality of electrodes. .

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