JP2010040825A - Light-emitting device - Google Patents

Light-emitting device Download PDF

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Publication number
JP2010040825A
JP2010040825A JP2008202832A JP2008202832A JP2010040825A JP 2010040825 A JP2010040825 A JP 2010040825A JP 2008202832 A JP2008202832 A JP 2008202832A JP 2008202832 A JP2008202832 A JP 2008202832A JP 2010040825 A JP2010040825 A JP 2010040825A
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light
guide plate
resin sealing
light guide
light emitting
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JP2008202832A
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Japanese (ja)
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Shigetoshi Onakahara
繁壽 大中原
Yasuko Hashiguchi
安子 橋口
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Panasonic Corp
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Panasonic Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting device that improves the luminance of irradiation light from a light guide plate by efficiently making light from a light-emitting element incident on a side surface of the light guide plate even in the case of the light guide plate which is formed thin. <P>SOLUTION: The light-emitting device includes the light-emitting element, a substrate 2 on which the light-emitting element is mounted, and a resin sealing portion 5 comprising a first resin sealing portion for sealing the light-emitting element and a second resin sealing portion 52 for covering the outside of the first resin sealing portion 51. The second resin sealing portion 52 has a first surface 52a disposed on the same plane as a back surface 92 of the light guide plate 9, a second surface 52b opposed to a side surface 91 of the light guide plate 9, and a third surface 52c disposed on the opposite side of a light irradiation surface 93 from the back surface 92 of the light guide plate 9. The first surface 52a is formed in a plane shape, and the third surface 52c is inclined so as to gradually decrease in thickness from a base 52x to a tip 52y. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、薄板状に形成された導光板の一側面に光源として配置される発光装置に関する。   The present invention relates to a light emitting device arranged as a light source on one side surface of a light guide plate formed in a thin plate shape.

発光装置は、液晶パネルの背面側から照光する導光板の一側面に配置されるバックライトユニットの光源として用いられている。このような発光装置として、例えば特許文献１に記載されたものがある。この特許文献１に記載の面実装型の半導体発光装置は、発光素子が搭載された基板を、実装用のプリント配線基板に垂直に立てて実装し、プリント配線基板の基板面と平行に出射される光を、導光板の一側面に入射させるもので、サイドビュー型と称されている。   The light emitting device is used as a light source of a backlight unit arranged on one side of a light guide plate that illuminates from the back side of a liquid crystal panel. An example of such a light emitting device is described in Patent Document 1. In the surface-mount type semiconductor light emitting device described in Patent Document 1, a substrate on which a light emitting element is mounted is mounted in a vertical position on a printed wiring board for mounting, and is emitted parallel to the substrate surface of the printed wiring board. Is incident on one side surface of the light guide plate, which is called a side view type.

このサイドビュー型の発光装置を導光板の側面に配置した状態を図９に示す。この導光板１００は、携帯電話装置に設けられた数字キーや記号キー、機能キーなどを背面側から照光するために薄板状に形成されている。従って、この導光板１００は、液晶パネルの背面側に配置される一般的な導光板より非常に薄く形成されているので、発光装置１０１の発光素子１０２を封止する樹脂封止部１０３の厚みより薄くなっている。
特開２００１−２０３３９４号公報 FIG. 9 shows a state in which the side view type light emitting device is arranged on the side surface of the light guide plate. The light guide plate 100 is formed in a thin plate shape to illuminate numeric keys, symbol keys, function keys, and the like provided in the mobile phone device from the back side. Therefore, since the light guide plate 100 is formed to be much thinner than a general light guide plate disposed on the back side of the liquid crystal panel, the thickness of the resin sealing portion 103 for sealing the light emitting element 102 of the light emitting device 101 is reduced. It is thinner.
JP 2001-203394 A

従って、この発光装置１０１は、厚みが薄い薄板状の導光板１００の光源として使用する場合に、発光装置１０１からの全部の光が導光板１００の側面に向かうわけではないので漏光が多く、発光装置１０１からの光を効率よく導光板へ案内することができない。   Therefore, when this light-emitting device 101 is used as a light source for a thin light guide plate 100 having a small thickness, not all light from the light-emitting device 101 is directed toward the side surface of the light guide plate 100, so there is a lot of light leakage. The light from the device 101 cannot be efficiently guided to the light guide plate.

そこで本発明は、薄板状に形成された導光板であっても効率よく導光板の側面に発光素子からの光を入射させることで導光板からの照射光の輝度を向上させることが可能な発光装置を提供することを目的とする。   Therefore, the present invention is a light emission capable of improving the luminance of the light emitted from the light guide plate by efficiently making the light from the light emitting element incident on the side surface of the light guide plate even in the light guide plate formed in a thin plate shape. An object is to provide an apparatus.

本発明の発光装置は、発光素子と、前記発光素子を搭載した基体と、前記発光素子を封止する樹脂封止部とを備え、薄板状に形成された導光板の一側面に、前記発光素子の主発光面を前記導光板の一側面に向けた状態で配置される発光装置であって、前記樹脂封止部は、前記基体側である基部から、前記導光板の一側面側である先部へ向かうに従って徐々に厚みが薄く形成されていることを特徴とする。   The light-emitting device of the present invention includes a light-emitting element, a base on which the light-emitting element is mounted, and a resin sealing portion that seals the light-emitting element. The light emitting device is disposed in a state where the main light emitting surface of the element faces one side surface of the light guide plate, and the resin sealing portion is on the one side surface side of the light guide plate from the base portion on the base side. The thickness is gradually reduced toward the tip.

本発明は、樹脂封止部の基部の厚みが導光板の厚みより厚い場合でも、徐々に厚みが薄くなる樹脂封止部内で反射することで、導光板の一側面へ案内され、一側面から外れてしまうような光であっても、導光板へ入射させることができる。よって、本発明は、薄板状に形成された導光板であっても効率よく導光板の側面に発光素子からの光を入射させることで導光板からの照射光の輝度を向上させることが可能である。   Even if the thickness of the base of the resin sealing portion is thicker than the thickness of the light guide plate, the present invention is guided to one side of the light guide plate by reflecting in the resin sealing portion where the thickness is gradually reduced. Even light that falls off can be made incident on the light guide plate. Therefore, the present invention can improve the brightness of the irradiation light from the light guide plate by efficiently making the light from the light emitting element incident on the side surface of the light guide plate even if the light guide plate is formed in a thin plate shape. is there.

本願の第１の発明は、発光素子と、発光素子が搭載された基体と、発光素子を封止した樹脂封止部とを備え、薄板状に形成された導光板の一側面に、発光素子の主発光面を導光板の一側面に向けた状態で配置される発光装置であって、樹脂封止部は、基体側である基部から、導光板の一側面側である先部へ向かうに従って徐々に厚みが薄く形成されていることを特徴としたものである。   1st invention of this application is equipped with the light emitting element, the base | substrate with which the light emitting element was mounted, and the resin sealing part which sealed the light emitting element, on one side of the light-guide plate formed in thin plate, light emitting element The light emitting device is disposed in a state where the main light emitting surface is directed to one side surface of the light guide plate, and the resin sealing portion proceeds from the base portion on the base side toward the front portion on the one side surface side of the light guide plate. The thickness is gradually reduced.

本発明の発光装置を薄板状に形成された導光板の一側面に配置するときには、発光素子の主発光面を導光板の一側面に向けた状態で配置される。このように配置されることで発光素子からの光が樹脂封止部内を進行し、樹脂封止部から出射して導光板の一側面に入射する。樹脂封止部内を進行する光は、真っ直ぐ抜けるものもあれば樹脂封止部内で反射しながら進行するものもある。本発明の発光装置では、樹脂封止部が基体と接続する基部から、導光板の一側面側である先部へ向かうに従って徐々に厚みが薄く形成されている。従って、樹脂封止部の基部の厚みが導光板の厚みより厚い場合でも、徐々に厚みが薄くなる樹脂封止部内で反射することで、導光板の一側面へ案内され、一側面から外れてしまうような光であっても、導光板へ入射させることができる。   When the light emitting device of the present invention is disposed on one side surface of the light guide plate formed in a thin plate shape, the light emitting element is disposed with the main light emitting surface facing the one side surface of the light guide plate. With this arrangement, light from the light emitting element travels in the resin sealing portion, is emitted from the resin sealing portion, and enters one side surface of the light guide plate. Some of the light traveling in the resin sealing portion passes straight through, while other light travels while reflecting in the resin sealing portion. In the light emitting device of the present invention, the thickness is gradually reduced from the base portion where the resin sealing portion is connected to the base toward the tip portion which is one side of the light guide plate. Therefore, even if the thickness of the base of the resin sealing portion is thicker than the thickness of the light guide plate, it is guided to one side surface of the light guide plate by being reflected in the resin sealing portion where the thickness is gradually reduced, and deviated from the one side surface. Even such light can enter the light guide plate.

本願の第２の発明は、第１の発明において、樹脂封止部は、導光板の背面と同じ平面上に位置する第１面と、導光板の一側面と対向する第２面と、導光板の背面とは反対側となる照光面側に位置する第３面とが形成され、第１面は、平面状に形成され、第３面は、基部から先部に向かって傾斜していることを特徴としたものである。   According to a second invention of the present application, in the first invention, the resin sealing portion includes a first surface located on the same plane as the back surface of the light guide plate, a second surface facing one side surface of the light guide plate, and a conductive surface. A third surface located on the side of the illumination surface opposite to the back surface of the optical plate is formed, the first surface is formed in a flat shape, and the third surface is inclined from the base portion toward the front portion. It is characterized by that.

第２の発明においては、樹脂封止部の第１面が平面状に形成されているので、第１面と導光板の背面との位置合わせが容易である。このような位置関係としたときに、樹脂封止部の第３面は、基部から先部に向かって傾斜しているので、樹脂封止部の基部の厚みが導光板の厚みより厚い場合でも、樹脂封止部内で反射することで導光板の一側面へ案内され、一側面から外れてしまうような光であっても、第２面から出射させ導光板へ入射させることができる。   In the second invention, since the first surface of the resin sealing portion is formed in a flat shape, it is easy to align the first surface and the back surface of the light guide plate. In such a positional relationship, since the third surface of the resin sealing portion is inclined from the base portion toward the tip portion, even when the thickness of the base portion of the resin sealing portion is thicker than the thickness of the light guide plate Even light that is guided to one side surface of the light guide plate by being reflected in the resin sealing portion and deviates from the one side surface can be emitted from the second surface and incident on the light guide plate.

本願の第３の発明は、第１の発明において、樹脂封止部は、導光板の照光面と同じ平面上に位置する第１面と、導光板の一側面と対向する第２面と、導光板の照光面とは反対側となる背面側に位置する第３面とが形成され、第１面は、ほぼ平面状に形成され、第３面は、基部から先部に向かって傾斜していることを特徴としたものである。   According to a third invention of the present application, in the first invention, the resin sealing portion includes a first surface located on the same plane as the illumination surface of the light guide plate, a second surface facing one side surface of the light guide plate, A third surface located on the back side opposite to the illumination surface of the light guide plate is formed, the first surface is formed in a substantially flat shape, and the third surface is inclined from the base portion toward the front portion. It is characterized by being.

第３の発明においては、樹脂封止部の第１面が平面状に形成されているので、第１面と導光板の照光面との位置合わせが容易である。このような位置関係としたときに、樹脂封止部の第３面は、基部から先部に向かって傾斜しているので、樹脂封止部の基部の厚みが導光板の厚みより厚い場合でも、樹脂封止部内で反射することで導光板の一側面へ案内され、一側面から外れてしまうような光であっても、第２面から出射させ導光板へ入射させることができる。   In the third invention, since the first surface of the resin sealing portion is formed in a flat shape, it is easy to align the first surface with the illumination surface of the light guide plate. In such a positional relationship, since the third surface of the resin sealing portion is inclined from the base portion toward the tip portion, even when the thickness of the base portion of the resin sealing portion is thicker than the thickness of the light guide plate Even light that is guided to one side surface of the light guide plate by being reflected in the resin sealing portion and deviates from the one side surface can be emitted from the second surface and incident on the light guide plate.

本願の第４の発明は、第２または第３の発明において、第２面には、第３面との接続部分に、第３面とのなす角が略直角となる凹部が形成されていることを特徴としたものである。   According to a fourth invention of the present application, in the second or third invention, the second surface is formed with a recess having a substantially right angle with the third surface at a connection portion with the third surface. It is characterized by that.

第４の発明においては、第２面の第３面との接続部分に、第３面とのなす角が略直角となる凹部が形成されているので、基部から先部に向かって傾斜した第３面に反射した光がこの凹部に達すると、第３面に近い部分を通過する光は入射角度が大きくなるので、大きな屈折により導光板の一側面の中心に向かって進行する。第３面に近い部分を通過する光は入射角度が小さくなるので、小さい屈折により導光板の一側面の中心に向かう光と交差するように進行する。従って、第３面で反射した光を導光板の一側面に平均的に入射させることができる。   In the fourth aspect of the present invention, since the concave portion whose angle formed with the third surface is a substantially right angle is formed in the connection portion between the second surface and the third surface, the second surface is inclined from the base portion toward the front portion. When the light reflected on the three surfaces reaches this recess, the light passing through the portion close to the third surface has an increased incident angle, and thus proceeds toward the center of one side surface of the light guide plate due to large refraction. Since the light passing through the portion close to the third surface has a small incident angle, it travels so as to intersect the light toward the center of one side surface of the light guide plate by small refraction. Therefore, the light reflected by the third surface can be incident on one side surface of the light guide plate on average.

本願の第５の発明は、第２から第４のいずれかの発明において、第２面には、第１面との接続部分に、第１面とのなす角が鈍角となる凹部が形成されていることを特徴としたものである。   According to a fifth invention of the present application, in any one of the second to fourth inventions, a recess having an obtuse angle with the first surface is formed on the second surface at a connection portion with the first surface. It is characterized by being.

第５の発明においては、第２面の第１面との接続部分に、第１面とのなす角が鈍角となる凹部が形成されているので、樹脂封止部内を進行してこの凹部に達した光は、出射するときに屈折した導光板の一側面の中央へ向かう光となるため、樹脂封止部から出射する光をより多く導光板の一側面へ入射させることができる。   In the fifth aspect of the present invention, since the concave portion having an obtuse angle with the first surface is formed in the connection portion between the second surface and the first surface, the resin seal portion proceeds to the concave portion. The reached light becomes light directed toward the center of one side surface of the light guide plate that is refracted when emitted, so that more light emitted from the resin sealing portion can be incident on one side surface of the light guide plate.

本願の第６の発明は、第２から第５のいずれかの発明において、第３面の表面には、樹脂封止部内を進行する光を反射する反射部が設けられていることを特徴としたものである。   A sixth invention of the present application is characterized in that, in any one of the second to fifth inventions, the third surface is provided with a reflecting portion that reflects light traveling in the resin sealing portion. It is a thing.

第６の発明においては、第３面に反射部が設けられていることで、樹脂封止部内を進行する光が第３面にて全反射せずに外部へ抜けて漏光となってしまうことを防止できる。   In the sixth aspect of the invention, since the reflecting portion is provided on the third surface, the light traveling in the resin sealing portion is not totally reflected on the third surface and escapes to the outside and becomes light leakage. Can be prevented.

（実施の形態）
本発明の実施の形態に係る発光装置を図１から図３に基づいて説明する。図１は、本発明の実施の形態に係る発光装置を示す斜視図である。図２は、図１に示す発光装置の基板と発光素子を示す平面図である。図３は、図１に示す発光装置を示す断面図である。 (Embodiment)
A light emitting device according to an embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a perspective view showing a light emitting device according to an embodiment of the present invention. FIG. 2 is a plan view showing a substrate and a light emitting element of the light emitting device shown in FIG. 3 is a cross-sectional view showing the light emitting device shown in FIG.

図１および図２に示すように発光装置１は、基板２と、発光素子３と、ツェナーダイオード４と、樹脂封止部５とを備え、薄板状の導光板の一側面に光源として配置されるものである。   As shown in FIGS. 1 and 2, the light emitting device 1 includes a substrate 2, a light emitting element 3, a Zener diode 4, and a resin sealing portion 5, and is disposed as a light source on one side surface of a thin plate-shaped light guide plate. Is.

基板２は、絶縁性基板２１に配線パターン２２が形成された板状の基体である。絶縁性基板２１はガラスエポキシ系樹脂や、ＢＴレジン（ビスマレイミドトリアジン樹脂系の熱硬化樹脂）などで形成することができる。   The substrate 2 is a plate-like substrate in which a wiring pattern 22 is formed on an insulating substrate 21. The insulating substrate 21 can be formed of glass epoxy resin, BT resin (bismaleimide triazine resin thermosetting resin), or the like.

配線パターン２２は、絶縁性基板２１の全面に銅箔層を形成した後に、この銅箔層を所定パターンにエッチングにより除去し、残った銅箔層上にＮｉ−Ａｕめっきを施して配線パターン２２とすることで形成することができる。   The wiring pattern 22 is formed by forming a copper foil layer on the entire surface of the insulating substrate 21, removing the copper foil layer by etching into a predetermined pattern, and performing Ni—Au plating on the remaining copper foil layer to form the wiring pattern 22. Can be formed.

配線パターン２２は、平面視して略Ｃ字状に形成されていることで、先端部が発光素子３とワイヤボンディングされるワイヤ接続パターン２２ａとなっている。また配線パターン２２は、絶縁性基板２１の両端部が断面コ字状に形成されることで、発光素子３が実装された実装面Ｓ１からその反対側となる裏面に至るまでを外部端子としている。また、配線パターン２２には、絶縁性接着剤Ｂを介在させて発光素子３およびツェナーダイオード４がダイボンドされる矩形状の搭載パターン２２ｂが絶縁性基板２１の中央部となる位置に形成されている。   The wiring pattern 22 is formed in a substantially C shape in plan view, so that the tip portion is a wire connection pattern 22 a that is wire-bonded to the light emitting element 3. In addition, the wiring pattern 22 has both end portions of the insulating substrate 21 formed in a U-shaped cross section, so that an external terminal extends from the mounting surface S1 on which the light emitting element 3 is mounted to the back surface on the opposite side. . In addition, a rectangular mounting pattern 22 b in which the light emitting element 3 and the Zener diode 4 are die-bonded with the insulating adhesive B interposed therebetween is formed in the wiring pattern 22 at a position that becomes the central portion of the insulating substrate 21. .

発光素子３は、サファイアなどで形成された絶縁性の基板に、発光層を含む半導体層を積層することで形成されたもので、基板２の搭載パターン２２ｂに搭載されている。発光素子３のｎ電極３１は、一方のワイヤ接続パターン２２ａにワイヤ６１を介在させて接続されている。また、発光素子３のｐ電極３２は、他方のワイヤ接続パターン２２ａにワイヤ６２を介在させて接続されている。   The light emitting element 3 is formed by laminating a semiconductor layer including a light emitting layer on an insulating substrate made of sapphire or the like, and is mounted on the mounting pattern 22 b of the substrate 2. The n-electrode 31 of the light-emitting element 3 is connected to one wire connection pattern 22a with a wire 61 interposed. The p-electrode 32 of the light-emitting element 3 is connected to the other wire connection pattern 22a with a wire 62 interposed.

ツェナーダイオード４は、発光素子３に対して過度な電圧が印加しないように設けられた保護素子である。ツェナーダイオード４のｎ電極４１は、発光素子３のｐ電極３２と導通するように、他方のワイヤ接続パターン２２ａとワイヤ６３により接続されている。また、ツェナーダイオード４のｐ電極４２は、発光素子３のｎ電極３１と導通するように、一方のワイヤ接続パターン２２ａとワイヤ６４により接続されている。   The Zener diode 4 is a protection element provided so that an excessive voltage is not applied to the light emitting element 3. The n-electrode 41 of the Zener diode 4 is connected to the other wire connection pattern 22 a and the wire 63 so as to be electrically connected to the p-electrode 32 of the light emitting element 3. In addition, the p-electrode 42 of the Zener diode 4 is connected to one wire connection pattern 22 a and a wire 64 so as to be electrically connected to the n-electrode 31 of the light emitting element 3.

図３に示すように、樹脂封止部５は、第１樹脂封止部５１と、第２樹脂封止部５２とを備え、それぞれが光透過性樹脂で形成されている。   As shown in FIG. 3, the resin sealing portion 5 includes a first resin sealing portion 51 and a second resin sealing portion 52, each of which is formed of a light transmissive resin.

第１樹脂封止部５１は、発光素子３およびツェナーダイオード４を直接封止するもので、発光素子３からの光に励起されて波長変換した光を発光する蛍光体（図示せず）を含有している。蛍光体としては、珪酸塩蛍光体やＹＡＧ系蛍光体が使用できる。   The first resin sealing portion 51 directly seals the light-emitting element 3 and the Zener diode 4 and includes a phosphor (not shown) that emits light that is excited by light from the light-emitting element 3 and wavelength-converted. is doing. As the phosphor, a silicate phosphor or a YAG phosphor can be used.

第２樹脂封止部５２は、図３においては下側に位置する第１面５２ａと、先端側である第２面５２ｂと、上側に位置する第３面５２ｃとを備え、基板２側である基部５２ｘから、導光板の一側面側である先部５２ｙへ向かうに従って徐々に厚みが薄く形成されている。つまり本実施の形態では、第１面５２ａが平面状に形成されているので、第３面５２ｃが基部５２ｘから先部５２ｙに向かって傾斜するように形成されている。第３面５２ｃは、３つの平面の面積が段階的に狭くなるように形成された面が接続された面であり、かつ傾斜の度合いが順次高くなるように形成されている。第３面５２ｃを形成する「段階的に面積が狭くなる面」の数は、適宜決定することができる。   In FIG. 3, the second resin sealing portion 52 includes a first surface 52a positioned on the lower side, a second surface 52b that is the tip side, and a third surface 52c positioned on the upper side. The thickness is gradually reduced from a certain base 52x toward the tip 52y that is one side of the light guide plate. That is, in the present embodiment, since the first surface 52a is formed in a flat shape, the third surface 52c is formed so as to be inclined from the base portion 52x toward the tip portion 52y. The third surface 52c is a surface to which surfaces formed so that the areas of the three planes are gradually reduced, and is formed so that the degree of inclination increases sequentially. The number of “surfaces whose area is gradually reduced” forming the third surface 52c can be determined as appropriate.

第２面５２ｂには、第１面５２ａとの接続部分に、第１面５２ａとのなす角が鈍角となる第１凹部５２ｂｘが形成されている。本実施の形態では、この角度を４５°としている。また、第２面５２ｂには、第３面５２ｃとの接続部分に、第３面５２ｃとのなす角が略直角となる第２凹部５２ｂｙが形成されている。従って、導光板（図示せず）の一側面に発光素子３を向けて発光装置１を配置したときに、第１凹部５２ｂｘと第２凹部５２ｂｙとの第２面５２ｂの残余が一側面に対して平行に対向する対向面５２ｂｚとなる。   In the second surface 52b, a first recess 52bx having an obtuse angle with the first surface 52a is formed at a connection portion with the first surface 52a. In the present embodiment, this angle is 45 °. In addition, the second surface 52b is formed with a second concave portion 52by having a substantially right angle with the third surface 52c at a connection portion with the third surface 52c. Therefore, when the light emitting device 1 is disposed with the light emitting element 3 facing the one side of the light guide plate (not shown), the remainder of the second surface 52b of the first recess 52bx and the second recess 52by is relative to the one side. Thus, the opposing surface 52bz is opposed in parallel.

また、図１に示すように側面となる第４面５２ｄおよび第５面５２ｅは平面状に形成された垂直面である。この第４面５２ｄおよび第５面５２ｅは反射率を高めるために鏡面とするのが望ましい。   Moreover, as shown in FIG. 1, the 4th surface 52d and the 5th surface 52e used as a side surface are the vertical surfaces formed in planar shape. The fourth surface 52d and the fifth surface 52e are preferably mirror surfaces in order to increase the reflectance.

そして、第３面５２ｃには、全体に金属薄膜が付与されていることで反射部が形成されている。この反射部は、アルミ蒸着などで形成することができる。   And the reflective part is formed in the 3rd surface 52c by giving the metal thin film to the whole. This reflection part can be formed by aluminum vapor deposition or the like.

本実施の形態では、樹脂封止部５として、蛍光体を含有した第１樹脂封止部５１と第１樹脂封止部５１の外側を覆う第２樹脂封止部５２とを備えているが、第１樹脂封止部５１を省略して第２樹脂封止部５２のみを樹脂封止部５としてもよい。   In the present embodiment, the resin sealing portion 5 includes a first resin sealing portion 51 containing a phosphor and a second resin sealing portion 52 that covers the outside of the first resin sealing portion 51. The first resin sealing portion 51 may be omitted and only the second resin sealing portion 52 may be used as the resin sealing portion 5.

以上のように構成された本発明の実施の形態に係る発光装置の製造方法について、図４から図７は、図１に示す発光装置の各製造工程を示す図である。   Regarding the method for manufacturing the light-emitting device according to the embodiment of the present invention configured as described above, FIGS. 4 to 7 are diagrams showing each manufacturing process of the light-emitting device shown in FIG.

図４に示すように、長さ方向に沿って順次切断していくことで基板２が多数個取りできる原基板２ｐを準備し、発光素子３およびツェナーダイオード４を、絶縁性接着剤Ｂが塗布された搭載パターン２２ｂ上に素子実装機によりダイボンドする。   As shown in FIG. 4, an original substrate 2 p from which a large number of substrates 2 can be obtained is prepared by sequentially cutting along the length direction, and an insulating adhesive B is applied to the light emitting element 3 and the Zener diode 4. A die bonding is performed on the mounted pattern 22b by an element mounting machine.

そして、発光素子３のｎ電極３１およびｐ電極３２と、ツェナーダイオード４のｎ電極４１およびｐ電極４２とを、それぞれワイヤ接続パターン２２ａにワイヤ６１〜６４により接続する。   Then, the n electrode 31 and the p electrode 32 of the light emitting element 3 and the n electrode 41 and the p electrode 42 of the Zener diode 4 are connected to the wire connection pattern 22a by wires 61 to 64, respectively.

次に、図５に示すように、蛍光体を含有した光透過性樹脂を用いてトランスファー成型法で第１樹脂封止部５１となる第１樹脂封止層５１ｐを形成することで、発光素子３およびツェナーダイオード４を封止する。   Next, as shown in FIG. 5, a light-emitting element is formed by forming a first resin sealing layer 51 p that becomes the first resin sealing portion 51 by a transfer molding method using a light-transmitting resin containing a phosphor. 3 and the Zener diode 4 are sealed.

次に、図６に示すように、光透過性樹脂を用いてトランスファー成型法で第２樹脂封止部５２となる第２樹脂封止層５２ｐを形成する。このとき第２樹脂封止層５２ｐを形成する金型の第２面５２ｂと第３面５２ｃとに対応する内側面を凹凸面とすることで、第２面５２ｂと第３面５２ｃを形成することができる。なお、第４面５２ｄおよび第５面５２ｅに対応する金型の内側面は平面状とする。   Next, as shown in FIG. 6, the 2nd resin sealing layer 52p used as the 2nd resin sealing part 52 is formed by the transfer molding method using a transparent resin. At this time, the inner surface corresponding to the second surface 52b and the third surface 52c of the mold for forming the second resin sealing layer 52p is an uneven surface, thereby forming the second surface 52b and the third surface 52c. be able to. The inner surface of the mold corresponding to the fourth surface 52d and the fifth surface 52e is planar.

次に、図７に示すように、第１樹脂封止層５１ｐおよび第２樹脂封止層５２ｐともども原基板２ｐをブレード８により切断することで、原基板２ｐを基板２とすると共に、第１樹脂封止層５１ｐおよび第２樹脂封止層５２ｐを樹脂封止部５として個片化する。   Next, as shown in FIG. 7, both the first resin sealing layer 51p and the second resin sealing layer 52p are cut back with the blade 8 so that the original substrate 2p becomes the substrate 2 and the first The resin sealing layer 51p and the second resin sealing layer 52p are separated into individual pieces as the resin sealing portion 5.

そして、第２樹脂封止層５２ｐを切断することで、第２樹脂封止部５２の第１面５２ａが形成される。   And the 1st surface 52a of the 2nd resin sealing part 52 is formed by cut | disconnecting the 2nd resin sealing layer 52p.

さらに、第２樹脂封止層５２ｐを個片化することでできる第２樹脂封止部５２の第３面５２ｃにアルミ蒸着による反射部を形成することで、図１に示す発光装置１を得ることができる。   Furthermore, the light emitting device 1 shown in FIG. 1 is obtained by forming a reflective portion by aluminum deposition on the third surface 52c of the second resin sealing portion 52 that can be obtained by separating the second resin sealing layer 52p. be able to.

次に、本実施の形態に係る発光装置１の使用状態について、図８に基づいて説明する。図８は、図１に示す発光装置の使用状態を示す断面図である。   Next, the usage state of the light-emitting device 1 according to the present embodiment will be described with reference to FIG. FIG. 8 is a cross-sectional view showing a usage state of the light emitting device shown in FIG.

発光装置１は、ポリカーボネートなどの樹脂で薄板状に形成された導光板９の側面９１に発光素子３を向けた状態で配置されている。発光装置１は、導光板９の背面９２と第２樹脂封止部５２の第１面５２ａとが、同じ平面位置に配置されている。   The light emitting device 1 is disposed in a state where the light emitting element 3 faces the side surface 91 of the light guide plate 9 formed in a thin plate shape with a resin such as polycarbonate. In the light emitting device 1, the back surface 92 of the light guide plate 9 and the first surface 52 a of the second resin sealing portion 52 are arranged at the same planar position.

発光素子３からの光は、第１樹脂封止部５１に含有された蛍光体によって発光した光と混色するので、発光面は第１樹脂封止部５１と第２樹脂封止部５２との境界面Ｓ２となる。従って、境界面（発光面）Ｓ２から出射した光は、第２樹脂封止部５２内を進行して、第１面５２ａから第５面５２ｅ（図１参照）へ向かう光となる。   Since the light from the light emitting element 3 is mixed with the light emitted by the phosphor contained in the first resin sealing portion 51, the light emitting surface is formed between the first resin sealing portion 51 and the second resin sealing portion 52. It becomes the boundary surface S2. Therefore, the light emitted from the boundary surface (light emitting surface) S2 travels in the second resin sealing portion 52 and becomes light directed from the first surface 52a to the fifth surface 52e (see FIG. 1).

第１面５２ａへ向かう光は、第１面５２ａで反射して第２面５２ｂへ向かう光となり、側面９１と対向した第２面５２ｂの対向面５２ｂｚで屈折して導光板９の側面９１へ到達する。対向面５２ｂｚは、第２樹脂封止部５２の各面うち最も側面９１に近接した面なので、第２面５２ｂからの光が対向面５２ｂｚで屈折したとしても側面９１へ入射させることができる。   The light traveling toward the first surface 52 a is reflected by the first surface 52 a and travels toward the second surface 52 b, and is refracted by the facing surface 52 bz of the second surface 52 b facing the side surface 91 to the side surface 91 of the light guide plate 9. To reach. Since the opposing surface 52bz is the surface closest to the side surface 91 among the surfaces of the second resin sealing portion 52, even if light from the second surface 52b is refracted by the opposing surface 52bz, it can be incident on the side surface 91.

図８において、第２樹脂封止部５２内を下向きに進行して第２面５２ｂの第１凹部５２ｂｘへ向かう光は、第１凹部５２ｂｘが第１面５２ａとのなす角が鈍角に形成されていることで、第１凹部５２ｂｘで上向きに屈折して、側面９１の方向へ向かう。   In FIG. 8, the light that travels downward in the second resin sealing portion 52 and travels toward the first recess 52bx of the second surface 52b has an obtuse angle formed by the first recess 52bx and the first surface 52a. Therefore, the light is refracted upward at the first recess 52bx and travels in the direction of the side surface 91.

発光面Ｓ２から第２面５２ｂの対向面５２ｂｚへ進行する光は、ほぼ対向面５２ｂｚに垂直に到達するので、そのまま屈折せずに側面９１へ入射する。また、対向面５２ｂｚへ第１面５２ａおよび第３面５２ｃから反射した光は、多少屈折するが、薄板の側面９１であっても側面９１から外れることはない。   The light traveling from the light emitting surface S2 to the facing surface 52bz of the second surface 52b reaches the side surface 91 as it is without being refracted as it is almost perpendicular to the facing surface 52bz. Further, the light reflected from the first surface 52a and the third surface 52c to the facing surface 52bz is refracted to some extent, but even the side surface 91 of the thin plate does not deviate from the side surface 91.

そして、発光面Ｓ２から第３面５２ｃへ向かう光は、第３面５２ｃの傾斜の度合いが順次高くなるように形成されているので、反射する位置が先部５２ｙに近づくに従って大きな反射角となる。また、第３面５２ｃで反射した光は、第２面５２ｂの第２凹部５２ｂｙへ到達するが、第２凹部５２ｂｙは第３面５２ｃとのなす角が略直角なので、屈折の度合いが低くなることで、第２樹脂封止部５２が導光板９に対して厚みが厚くても、側面９１の中央部に向かって進行させることができる。   And since the light which goes to the 3rd surface 52c from the light emission surface S2 is formed so that the degree of the inclination of the 3rd surface 52c may become high sequentially, it becomes a large reflection angle as the reflective position approaches the front part 52y. . The light reflected by the third surface 52c reaches the second recess 52by of the second surface 52b, but the second recess 52by has a substantially right angle with the third surface 52c, so the degree of refraction is low. Thus, even if the second resin sealing portion 52 is thicker than the light guide plate 9, the second resin sealing portion 52 can be advanced toward the center portion of the side surface 91.

このように、発光面Ｓ２からそれぞれ第１面５２ａから第３面５２ｃへ向かう光を導光板９の側面９１へ向かわせることができるので、第２樹脂封止部５２の基部５２ｘの厚みが導光板９の厚みより厚い場合でも、導光板９の側面９１へ案内して、導光板９へ入射させることができる。よって、発光装置１は、薄板状に形成された導光板９であっても効率よく導光板９の側面９１に発光素子３からの光を入射させることで導光板９からの照射光の輝度を向上させることが可能である。   In this way, the light traveling from the light emitting surface S2 toward the third surface 52c from the first surface 52a can be directed to the side surface 91 of the light guide plate 9, so that the thickness of the base portion 52x of the second resin sealing portion 52 is guided. Even when it is thicker than the optical plate 9, it can be guided to the side surface 91 of the light guide plate 9 and incident on the light guide plate 9. Therefore, even if the light-emitting device 1 is the light-guide plate 9 formed in the thin plate shape, the light from the light-emitting element 3 is efficiently incident on the side surface 91 of the light-guide plate 9 to thereby increase the luminance of the irradiation light from the light-guide plate 9. It is possible to improve.

なお、本実施の形態では、図８に示すように発光装置１は、第２樹脂封止部５２の第１面５２ａが導光板９の背面９２と同じ平面位置となるように配置されているため、第１面５２ａを平面に、第３面５２ｃを基部５２ｘから先部５２ｙに向かって傾斜するように形成しているが、導光板９の照光面９３と第３面とが同じ平面位置とする場合には、第３面を平面状に形成し、第１面を基部５２ｘから先部５２ｙに向かって傾斜するように形成することで同様の効果を得ることができる。   In the present embodiment, as shown in FIG. 8, the light emitting device 1 is arranged such that the first surface 52 a of the second resin sealing portion 52 is at the same planar position as the back surface 92 of the light guide plate 9. Therefore, the first surface 52a is formed as a plane, and the third surface 52c is formed so as to be inclined from the base portion 52x toward the tip portion 52y. However, the illumination surface 93 and the third surface of the light guide plate 9 are in the same plane position. In this case, the same effect can be obtained by forming the third surface in a planar shape and forming the first surface so as to be inclined from the base portion 52x toward the tip portion 52y.

また、本実施の形態に係る第２樹脂封止部５２は、第３面５２ｃが３つの平面の面積が段階的に狭くなるように形成されているが、なだらかな円弧面とすることもできる。   Further, in the second resin sealing portion 52 according to the present embodiment, the third surface 52c is formed so that the areas of the three planes are gradually reduced, but can also be a gentle arc surface. .

本発明は、薄板状に形成された導光板であっても効率よく導光板の側面に発光素子からの光を入射させることで導光板からの照射光の輝度を向上させることが可能なので、薄板状に形成された導光板の一側面に光源として配置される発光装置に好適である。   Since the present invention can improve the luminance of the light emitted from the light guide plate by efficiently making the light from the light emitting element incident on the side surface of the light guide plate even if the light guide plate is formed in a thin plate shape, the thin plate It is suitable for a light emitting device arranged as a light source on one side of a light guide plate formed in a shape.

本発明の実施の形態に係る発光装置を示す斜視図The perspective view which shows the light-emitting device which concerns on embodiment of this invention. 図１の発光装置の基板と発光素子を示す平面図The top view which shows the board | substrate and light emitting element of the light-emitting device of FIG. 図１に示す発光装置を示す断面図Sectional drawing which shows the light-emitting device shown in FIG. 図１に示す発光装置の製造工程を示す図The figure which shows the manufacturing process of the light-emitting device shown in FIG. 図１に示す発光装置の製造工程を示す図The figure which shows the manufacturing process of the light-emitting device shown in FIG. 図１に示す発光装置の製造工程を示す図The figure which shows the manufacturing process of the light-emitting device shown in FIG. 図１に示す発光装置の製造工程を示す図The figure which shows the manufacturing process of the light-emitting device shown in FIG. 図１に示す発光装置の使用状態を示す断面図Sectional drawing which shows the use condition of the light-emitting device shown in FIG. 従来の発光装置を導光板の側面に配置した状態を示す図The figure which shows the state which has arrange | positioned the conventional light-emitting device to the side surface of a light-guide plate.

符号の説明Explanation of symbols

１ 発光装置
２ 基板
２ｐ 原基板
３ 発光素子
４ ツェナーダイオード
５ 樹脂封止部
９ 導光板
２１ 絶縁性基板
２２ 配線パターン
２２ａ ワイヤ接続パターン
２２ｂ 搭載パターン
３１ ｎ電極
３２ ｐ電極
４１ ｎ電極
４２ ｐ電極
５１ 第１樹脂封止部
５１ｐ 第１樹脂封止層
５２ 第２樹脂封止部
５２ａ 第１面
５２ｂ 第２面
５２ｂｘ 第１凹部
５２ｂｙ 第２凹部
５２ｂｚ 対向面
５２ｃ 第３面
５２ｄ 第４面
５２ｅ 第５面
５２ｐ 第２樹脂封止層
５２ｘ 基部
５２ｙ 先部
６１，６２，６３，６４ ワイヤ
９１ 側面
９２ 背面
９３ 照光面
Ｂ 絶縁性接着剤
Ｓ１ 実装面
Ｓ２ 境界面（発光面） DESCRIPTION OF SYMBOLS 1 Light-emitting device 2 Board | substrate 2p Original board 3 Light emitting element 4 Zener diode 5 Resin sealing part 9 Light guide plate 21 Insulating board 22 Wiring pattern 22a Wire connection pattern 22b Mounting pattern 31 N electrode 32 P electrode 41 N electrode 42 P electrode 51 1st 1 resin sealing part 51p 1st resin sealing layer 52 2nd resin sealing part 52a 1st surface 52b 2nd surface 52bx 1st recessed part 52by 2nd recessed part 52bz Opposing surface 52c 3rd surface 52d 4th surface 52e 5th surface 52p Second resin sealing layer 52x Base 52y Tip 61, 62, 63, 64 Wire 91 Side surface 92 Back surface 93 Illuminating surface B Insulating adhesive S1 Mounting surface S2 Boundary surface (light emitting surface)

Claims (6)

発光素子と、前記発光素子が搭載された基体と、前記発光素子を封止した樹脂封止部とを備え、薄板状に形成された導光板の一側面に、前記発光素子の主発光面を前記導光板の一側面に向けた状態で配置される発光装置であって、
前記樹脂封止部は、前記基体側である基部から、前記導光板の一側面側である先部へ向かうに従って徐々に厚みが薄く形成されていることを特徴とする発光装置。 A light emitting element, a base on which the light emitting element is mounted, and a resin sealing portion that seals the light emitting element, and a main light emitting surface of the light emitting element is disposed on one side of the light guide plate formed in a thin plate shape. A light emitting device arranged in a state directed to one side of the light guide plate,
The light emitting device is characterized in that the resin sealing portion is formed so as to gradually become thinner from a base portion on the base side toward a tip portion on one side surface of the light guide plate. 前記樹脂封止部は、前記導光板の背面と同じ平面上に位置する第１面と、前記導光板の一側面と対向する第２面と、前記導光板の背面とは反対側となる照光面側に位置する第３面とが形成され、
前記第１面は、平面状に形成され、
前記第３面は、前記基部から先部に向かって傾斜している請求項１記載の発光装置。 The resin sealing portion includes a first surface located on the same plane as the back surface of the light guide plate, a second surface facing one side surface of the light guide plate, and an illumination that is opposite to the back surface of the light guide plate. A third surface located on the surface side is formed,
The first surface is formed in a planar shape,
The light emitting device according to claim 1, wherein the third surface is inclined from the base portion toward the tip portion. 前記樹脂封止部は、前記導光板の照光面と同じ平面上に位置する第１面と、前記導光板の一側面と対向する第２面と、前記導光板の照光面とは反対側となる背面側に位置する第３面とが形成され、
前記第１面は、ほぼ平面状に形成され、
前記第３面は、前記基部から先部に向かって傾斜している請求項１記載の発光装置。 The resin sealing portion includes a first surface located on the same plane as the illumination surface of the light guide plate, a second surface facing one side surface of the light guide plate, and a side opposite to the illumination surface of the light guide plate. A third surface located on the back side is formed,
The first surface is substantially planar,
The light emitting device according to claim 1, wherein the third surface is inclined from the base portion toward the tip portion. 前記第２面には、前記第３面との接続部分に、前記第３面とのなす角が略直角となる凹部が形成されている請求項２または３記載の発光装置。 4. The light emitting device according to claim 2, wherein the second surface is formed with a recess having a substantially right angle with the third surface at a connection portion with the third surface. 5. 前記第２面には、前記第１面との接続部分に、前記第１面とのなす角が鈍角となる凹部が形成されている請求項２から４のいずれかの項に記載の発光装置。 5. The light emitting device according to claim 2, wherein the second surface is formed with a recess having an obtuse angle with the first surface at a connection portion with the first surface. . 前記第３面の表面には、前記樹脂封止部内を進行する光を反射する反射部が設けられている請求項２から５のいずれかの項に記載の発光装置。 6. The light emitting device according to claim 2, wherein a reflection portion that reflects light traveling through the resin sealing portion is provided on a surface of the third surface.
JP2008202832A 2008-08-06 2008-08-06 Light-emitting device Withdrawn JP2010040825A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013258361A (en) * 2012-06-14 2013-12-26 Renesas Electronics Corp Semiconductor device and manufacturing method of the same
CN104777549A (en) * 2015-04-23 2015-07-15 福州大学 Light guide strip for liquid crystal display
JP2016086111A (en) * 2014-10-28 2016-05-19 日亜化学工業株式会社 Light-emitting device and method for manufacturing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013258361A (en) * 2012-06-14 2013-12-26 Renesas Electronics Corp Semiconductor device and manufacturing method of the same
JP2016086111A (en) * 2014-10-28 2016-05-19 日亜化学工業株式会社 Light-emitting device and method for manufacturing the same
CN104777549A (en) * 2015-04-23 2015-07-15 福州大学 Light guide strip for liquid crystal display

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