JP2008036841A - Heating resistor element component, method for manufacturing the same, and thermal printer - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thermal head which can suppress power consumption by improving a heating efficiency of a heating resistor, has a substrate below the lower part of the heating resistor of which the strength is improved, and can be readily manufactured at low cost, and to provide a method for manufacturing the thermal head and a thermal printer. <P>SOLUTION: A plurality of heating resistors 4 are arranged on an insulation film 3 laminated on a support substrate 2 at intervals and wires 5 for supplying power are connected to the heating resistors 4, respectively. A through-hole 9 passing through the support substrate 2 in the depth direction is provided to a region on the support substrate 2 covered by each of the heating resistors 4, and a thin part 10 having the thickness smaller than the periphery hereof is provided to a region on the insulation film 3 covered by each of the heating resistors 4. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a heating resistor element component, a method for manufacturing the same, and a thermal printer.

In recent years, thermal printers are increasingly used for small information equipment terminals. Since the small information device terminal is battery-driven, there is a strong demand for power saving of the thermal printer, and a thermal head with high heat generation efficiency is demanded.
In order to increase the efficiency of the thermal head, there is a method of forming a heat insulating layer under the heating resistor (see, for example, Patent Document 1). Of the amount of heat generated by the heating resistor, the amount of heat transmitted to the wear-resistant layer above the heating resistor is greater than the amount of heat transmitted to the insulating substrate below the heating resistor, so it is necessary for printing. The energy efficiency is improved.
JP-A-6-166197

However, the thermal head having the structure disclosed in Patent Document 1 has the following problems.
That is, by providing a cavity under the heating resistor, there is a heat insulation effect toward the insulating substrate body, but the underglaze layer itself is formed relatively thick in order to form the cavity in the middle position in the thickness direction. Need to be done. For this reason, the amount of heat transferred to the underglaze layer is accumulated in the underglaze layer, and there is a problem that the amount of heat transferred to the surface side of the heat generating resistor is reduced and the heat generation efficiency is lowered.

  In addition, the resin material that is evaporated to form the cavity has a low dimensional accuracy, and a precisely shaped cavity cannot be formed. For this reason, since the cavity is formed in a strip shape so as to straddle the plurality of heating resistors along the arrangement direction of the plurality of heating resistors, the strength of the underglaze layer at the position of the heating resistors is low, and printing is performed. In this case, there is a drawback that the cavity is easily crushed by the pressure applied to the heating resistor. In particular, since the drum sandwiching the printing paper with the heating resistor is arranged along the arrangement direction of the heating resistors, the underglaze layer may break along the arrangement direction of the heating resistors.

  Furthermore, the conventional method of providing a cavity in the middle position in the thickness direction of the underglaze layer is to print and dry an evaporative component layer made of a cellulose-based resin on the surface of the lower layer of the underglaze layer, and then dry the underglaze layer. An underglaze surface layer forming paste made of the same insulating material as the lower layer is formed on the surface and dried. Further, the insulating material laminated in this way is baked at a temperature of about 1300 ° C. to evaporate the evaporation component layer. Accordingly, there is a problem that a complicated process is required to provide the hollow portion below the heating resistor, and time is required for manufacturing.

  The present invention has been made in view of the above-described circumstances, and improves the heating efficiency of the heating resistor to reduce power consumption, improves the strength of the substrate under the heating resistor, and is simple and inexpensive. It is an object of the present invention to provide a thermal head that can be manufactured, a manufacturing method thereof, and a thermal printer.

In order to achieve the above object, the present invention provides the following means.
In the present invention, a plurality of heating resistors are arranged at intervals on an insulating film laminated on a support substrate, and wiring for supplying power to each of the plurality of heating resistors is connected, A through hole penetrating the support substrate in the thickness direction is provided in a region covered with each heat generating resistor of the support substrate, and a region covered with each heat generating resistor of the insulating coating is thicker than the surroundings. Provided is a heating resistor element part provided with a thin thin part.

According to the present invention, an extremely thin insulating coating is provided below the heat generation effective area portion of the heating resistor, and further, there is provided a cavity without a support substrate below, so that the cavity is a heat insulating layer. The heat (heat amount) generated by the heating resistor can be prevented from flowing out in the thickness direction of the support substrate. As described above, in the heating resistor element component in which the cavity is formed immediately below the heating resistor, the heat generated in the heating resistor is applied to the front and back surfaces of the support substrate in the insulating film located above the cavity. It spreads in a parallel direction (that is, a direction orthogonal to the thickness direction of the support substrate) and is transmitted to the peripheral portion of the thin portion. Thereafter, the heat flow that reaches the peripheral portion of the thin portion is transmitted in the thickness direction of the support substrate (that is, the direction orthogonal to the front and back surfaces of the support substrate) in the insulating coating, and reaches the support substrate.
In addition, the heat insulation performance in the insulating coating located above the cavity is higher as the insulating coating is thinner, and the heat insulating performance in the insulating coating at the peripheral portion of the thin wall portion is higher as the insulating coating is thicker. In the present invention, an extremely thin insulating film is formed immediately below the heating resistor, and a relatively thick insulating film is formed in the other portions. Therefore, it is possible to obtain a much higher heat insulation effect compared to a heating resistor element component with a uniform insulating coating thickness over the entire surface of the support substrate. As a result, a heating resistor element component with extremely high heating efficiency is provided. can do.

In the above invention, the through hole and the thin portion may be provided individually for each heating resistor.
By doing in this way, a board | substrate can be left between the cavity parts provided for every adjacent heating resistor. The substrate remaining between the cavities extends in the thickness direction and functions as a support member that supports the pressing force applied from the upper surface of the heating resistor. As a result, even when a pressing force is applied from the upper surface side of the heating resistor during printing or the like, the pressing force is supported by the substrate remaining between the cavity portions, and the pressure resistance performance is improved.

In the said invention, it is preferable that the said through-hole is formed smaller in the size in planar view than the size in planar view of the said thin part.
By doing in this way, further higher heat insulation performance can be obtained while keeping the mechanical strength of the thermal head itself high.
In addition, since more substrates can be left between the hollow portions provided for the adjacent heating resistors, there is an advantage that the manufacture is facilitated.

In the said invention, it is preferable that the lower end of the said through-hole is covered with the 2nd board | substrate.
By doing in this way, withstand pressure strength (mechanical strength) can be improved and heat insulation performance can be further improved.

  The present invention includes an insulating film forming step of forming an insulating film on the surface of the support substrate, an etching mask forming step of forming an etching mask having an etching window on the back surface of the support substrate, and the etching on the insulating film. Etching from the back side of the support substrate using the heating mask as a mask, a heating resistor forming step of forming a heating resistor at a position corresponding to the window, a wiring forming step of forming a wiring connected to the heating resistor, and the etching mask as a mask Thus, there is provided a method of manufacturing a heating resistor element part including a step of forming a through hole in the support substrate and a cavity part forming step of forming a thin part in the insulating film.

  According to the present invention, the cavity forming process is performed by only two processes, for example, the etching mask 7 forming process of FIG. 2B and the etching process of the substrate 2 of FIG. Thus, the number of steps for forming the hollow portion can be reduced, and a heating resistor element component having excellent productivity can be obtained.

  The present invention includes an insulating film forming step of forming an insulating film on the surface of the support substrate, an etching mask forming step of forming an etching mask having an etching window on the back surface of the support substrate, and the etching on the insulating film. Etching from the back side of the support substrate using the heating mask as a mask, a heating resistor forming step of forming a heating resistor at a position corresponding to the window, a wiring forming step of forming a wiring connected to the heating resistor, and the etching mask as a mask A through-hole forming step of forming a through-hole in the support substrate, and etching from the back side of the support substrate using the etching mask as a mask, so that the insulating coating is thinner than the surroundings. A method for manufacturing a heating resistance element component including a thin-walled portion forming step for forming a portion is provided.

According to the present invention, since the processing accuracy in the thickness direction of the insulating coating is improved, the controllability of the thickness of the insulating coating that affects the heat insulating performance is improved, so that high thermal insulation performance is obtained.
Further, it is possible to obtain a heating resistance element component having uniform characteristics over the entire wafer.

  The present invention provides a convex portion forming step of forming a convex portion on the surface of the support substrate, an insulating film forming step of forming an insulating coating on the surface of the support substrate, and a position corresponding to the convex portion on the back surface of the support substrate. An etching mask forming step for forming an etching mask having an etching window on the insulating film; a heating resistor forming step for forming a heating resistor at a position corresponding to the etching window on the insulating film; and a connection to the heating resistor. Manufacturing of a heating element element including a wiring forming step for forming a wiring and a cavity forming step for forming a through hole in the support substrate by etching from the back side of the support substrate using the etching mask as a mask Provide a method.

  According to the present invention, the shape of the cavity near the insulating coating is the shape of the protrusion formed on the support substrate in the protrusion formation step. Therefore, the shape of the cavity near the insulating coating becomes a desired size even after the support substrate having a thickness of several hundred μm is subjected to the penetration process. Accordingly, the processing accuracy of the cavity can be easily improved. In particular, in a heating element element in which a large number of heating resistors are arranged in a straight line, it is necessary to arrange 4 to 16 heating resistors per mm. A heating resistor can be arranged, which is very effective for obtaining a highly efficient heating resistor element part.

  According to the present invention, an area for embedding an insulating film is formed on the surface of the support substrate, and an etching process is performed to etch the surface of the support substrate so that the periphery of the support substrate is high. An insulating film forming step for forming a film; an etching mask forming step for forming an etching mask having an etching window on the back surface of the support substrate; and a heating resistor at a position corresponding to the etching window on the insulating film. A through-hole is formed in the support substrate by etching from the back surface side of the support substrate, using the etching mask as a mask. And a cavity forming step for forming a heating resistor element component.

  According to the present invention, since the shape of the insulating coating in the vicinity of the cavity is the same as the shape of the protrusion, the cavity can be easily and accurately formed below the heating resistor.

  The present invention provides a first insulating coating forming step for forming a first insulating coating on the surface of a support substrate, and a second insulating coating forming step for forming a second insulating coating on the surface of the first insulating coating. An etching mask forming step of forming an etching mask having an etching window on the back surface of the support substrate; and a heating resistor for forming a heating resistor at a position corresponding to the etching window on the second insulating film. Forming on the support substrate and the first insulating film by etching from the back side of the support substrate using the etching mask as a mask; There is provided a method for manufacturing a heating resistor element including a cavity forming step of forming a through hole.

According to the present invention, since the first insulating film and the second insulating film are made of different materials, the optimum etching conditions are different from each other, and the second insulating film is formed in the cavity forming step. The coating functions as an etching stop layer, and only the first insulating coating can be removed, the processing accuracy in the thickness direction of these insulating coatings is improved, and the thickness of these insulating coatings affecting the heat insulation performance Controllability is improved and high heat insulation performance can be obtained.
Further, it is possible to obtain a heating resistance element component having uniform characteristics over the entire wafer.

  The present invention includes a first insulating film forming step of forming a first insulating film on a surface of a support substrate, an etching stop layer forming step of forming an etching stop layer on the surface of the first insulating film, and the etching A second insulating film forming step for forming a second insulating film on the surface of the stop layer; an etching mask forming step for forming an etching mask having an etching window on the back surface of the support substrate; and the second insulating film. A heating resistor forming step for forming a heating resistor at a position corresponding to the etching window on the substrate; a wiring forming step for forming a wiring connected to the heating resistor; and the supporting substrate using the etching mask as a mask. A cavity that forms a through hole in the support substrate, the first insulating film, and the etching stop layer by etching from the back side To provide a manufacturing method for a heating resistor element component comprising a forming step.

According to the present invention, when an etching stop layer made of a material different from that of the first insulating coating is formed between the first insulating coating and the second insulating coating, it is positioned above the cavity. Thus, the controllability of the thickness of the second insulating film is further improved.
Further, since the etching stop layer located above the cavity is removed, a metal material having good heat conduction can be used as the material of the etching stop layer, and the first insulating film and the second insulating film can be used. The degree of freedom in selecting the film and the material for the etching stop layer is increased, and the film thickness control of the second insulating film can be made easier.

In addition, the present invention provides a thermal printer including a thermal head made of any one of the heating resistor elements described above.
According to the present invention, heat generation efficiency can be improved to save power, and printing can be performed for a long time with less power. In addition, printing with high resolution can be performed by shortening the arrangement pitch of the heating resistors.

  According to the present invention, it is possible to improve the heat generation efficiency of the heat generating resistor to reduce power consumption, to improve the strength of the substrate under the heat generating resistor, and to be manufactured easily and inexpensively.

A heating resistor element component 1 according to a first embodiment of the present invention and a method for manufacturing the same will be described below with reference to FIGS. 1A and 1B are diagrams showing a thermal head that is a heating resistor element component according to a first embodiment of the present invention, in which FIG. 1A is a plan view and FIG. 1B is a longitudinal sectional view taken along line AA in FIG. . FIG. 2 is a process diagram for explaining the manufacturing method of the thermal head of FIG. 1, and is a BB longitudinal sectional view of FIG. FIG. 3 is a plan view of an essential part of the thermal head shown in FIG. 1 viewed from below.
The heating resistor element component 1 according to the present embodiment is a thermal head (hereinafter referred to as a thermal head) used in a thermal printer. As shown in FIG. 1, the heating resistor element component 1 includes a support substrate (hereinafter referred to as a substrate) 2 and an undercoat (insulating film) 3 formed on the substrate 2. A plurality of heating resistors 4 are formed (arranged) on the undercoat 3 at intervals, and a wiring 5 is connected to the heating resistors 4. Furthermore, the heating resistor element component 1 includes a heating resistor 4 and a protective film 6 that covers the upper surface of the wiring 5. In addition, the code | symbol 7 in FIG. 1 is an etching mask.

In the substrate 2, a through-hole 9 that penetrates in the thickness direction of the substrate 2 is formed in a region covered with the heating resistor 4. The number of through holes 9 is equal to the number of heating resistors 4.
The undercoat 3 is formed with a thin portion 10 having a thickness smaller than that of the surrounding area at a position corresponding to the through hole 9. That is, the undercoat 3 itself has a step, the position corresponding to the through hole 9 of the undercoat 3 is thin, and the periphery thereof is thick. A space formed by the inner wall surface of the through hole 9 and the thin wall portion 10 and the peripheral wall surface surrounding the inner wall surface constitutes a cavity portion 11 disposed in each heating resistor 4.

The cavity 11 is provided at a position corresponding to the heat generation effective area of the heat generating resistor 4 and functions as a heat insulating layer that suppresses the outflow of heat generated in the heat generating resistor 4 to the substrate 2. The heat generation effective area of the heat generating resistor 4 is a range (region) in which the overlapping portion with the wiring 5 is removed (excluded) from the range (region) of the heat generating resistor 4.
The substrate 2 is formed with partition walls 12 that isolate the through-holes 9 corresponding to the respective heating resistors 4 individually. These partition walls 12 have a function as a support member that supports the undercoat 3 on the upper layer of the substrate 2. In the present embodiment, the cross-sectional areas of the through hole 9 and the thin portion 10 are the same.
The wiring 5 includes a common wiring 5a connected to one end in a direction orthogonal to the arrangement direction of the heating resistors 4 and an individual wiring 5b connected to the other end.

Next, a method for manufacturing the thermal head 1 according to this embodiment will be described.
First, as shown in FIG. 2A, an undercoat 3 made of an insulating material is formed on the surface of a substrate 2 having a certain thickness. As a material of the substrate 2, for example, a single crystal silicon substrate or the like is used. Moreover, as a material of the undercoat 3, for example, SiO ₂ , SiO, Al ₂ O ₃ , Ta ₂ O ₅ , SiAlON, Si ₃ N ₄ or the like is used. Any one of CVD methods is used. The thickness dimensions of the substrate 2 and the undercoat 3 are several hundred μm and several tens μm to several hundred μm, respectively.

Next, as shown in FIG. 2B, the through hole 9 of the substrate 2 is processed on the surface of the substrate 2 opposite to the surface on which the undercoat 3 is provided (hereinafter referred to as the back surface). An etching mask 7 is formed. Specifically, an etching mask 7 made of a mask material is formed on the back surface of the substrate 2 by any one of sputtering, vacuum evaporation, and CVD. As the mask material, for example, an insulating material such as SiO ₂ or Si ₃ N ₄ or a metal material such as Al or Cr is used.
Then, after patterning the surface of the etching mask 7 with a photoresist (not shown), dry etching or wet etching by reactive ion etching (RIE) is performed, the etching mask 7 is etched, and an etching window is formed. 7a is formed. The etching mask 7 is for forming the cavity 11 in the substrate 2, and an etching window 7a is formed in a region where the heating resistor 4 is disposed on the surface side so as to cover the remaining region. Patterned. According to the thermal head 1 of this embodiment, the size of the etching window 7 a formed by patterning the etching mask 7 is the same as the effective heating area of the heating resistor 4.

  Next, as shown in FIG. 2C, the heating resistor 4 is formed on the undercoat 3 located on the surface side of the substrate 2. As the heating resistor 4, for example, a Ta-based or silicide-based heating resistor material is used. The heating resistor material is deposited by sputtering, vapor deposition, CVD, or the like, and the heating resistor 4 is formed by lift-off or etching.

  Next, as shown in FIG. 2D, for example, a wiring material such as Al, Al-Si, or Au is formed by sputtering or vapor deposition, and the individual wiring 5b and the common wiring 5a are formed by a lift-off method or an etching method. Form.

Then, as shown in FIG. 2 (e), for _{example, Si0 2, Ta 2 O 5} , SiAlON, Si 3 sputtering a protective film material consisting of N, and the like, ion plating, is deposited by CVD or the like. The protective film 6 is formed so as to cover the entire surface of the heating resistor 4 and the wiring 5 positioned on the surface side of the substrate 2.

Finally, as shown in FIG. 2 (f), using the etching mask 7 formed in FIG. 2 (b) as a mask, the substrate 2 is etched from the back side of the substrate 2 by a dry etching method by RIE. A cavity reaching the back surface of the undercoat 3 is formed. Further, etching is further performed to remove a part of the undercoat 3 so that the thickness of the undercoat 3 located on the upper side of the cavity 11 (upper side in FIG. 2F) is reduced. The film thickness of the undercoat located above the cavity 11 (upper side in FIG. 2F) is several μm to 10 μm.
In this way, the thermal head 1 shown in FIG. 1 is manufactured. FIG. 3 is a plan view of the main part of the thermal head 1 shown in FIG. 1 as viewed from below (lower side in FIG. 1B).

According to the thermal head 1 according to the present embodiment configured as described above, the ultrathin undercoat 3 is provided below the heat generation effective area portion of the heating resistor 4, and the substrate 2 is present below the thin coating. Since the hollow portion 11 is not provided, the hollow portion 11 functions as a heat insulating layer, and the heat (heat amount) generated in the heating resistor 4 is prevented from flowing out in the thickness direction of the substrate 2. Can do. As described above, in the thermal head 1 in which the cavity 11 is formed immediately below the heating resistor 4, the heat generated in the heating resistor 4 is generated in the undercoat 3 located above the cavity 11. It spreads in a direction parallel to the front surface and the back surface (that is, a direction parallel to the surface of the protective film 6) and is transmitted to the peripheral edge of the thin portion 10. Thereafter, the heat flow that has reached the peripheral edge of the thin portion 10 is transmitted in the thickness direction of the substrate 2 in the undercoat 3 (that is, the direction orthogonal to the front surface and the back surface of the substrate 2) and reaches the substrate 2.
In addition, the heat insulation performance in the undercoat 3 located on the upper side of the cavity portion 11 is higher as the undercoat 3 is thinner, and the heat insulation performance in the undercoat 3 in the peripheral portion of the thin portion 10 is higher as the undercoat 3 is thicker. Become. In the present embodiment, an extremely thin undercoat 3 is formed immediately below the heating resistor 4, and a relatively thick undercoat 3 is formed in the other portions. Therefore, compared with the thermal head 1 in which the thickness of the undercoat 3 is uniform over the entire surface of the substrate 2, a very high heat insulating effect can be obtained, and as a result, the thermal head 1 having a very high heat generation efficiency is provided. be able to.

  The cavity 11 is formed only in two steps, that is, the step of forming the etching mask 7 in FIG. 2B and the step of etching the substrate 2 in FIG. Therefore, the number of steps for forming the cavity 11 can be reduced, and the thermal head 1 having excellent productivity can be obtained.

  Furthermore, by providing the cavity 11 individually for each heating resistor 4, the substrate 2 (that is, the partition wall 12) can be left between the cavity 11 provided for each adjacent heating resistor 4. The partition wall 12 extends in the thickness direction and functions as a support member that supports the pressing force applied from the upper surface of the heating resistor 4. As a result, even if a pressing force is applied from the upper surface side of the heating resistor 4 during printing or the like, the pressing force is supported by the partition walls 12 remaining between the hollow portions 11, and the pressure resistance performance is improved.

  Furthermore, by forming the heating resistor 4 using a single crystal silicon substrate, it is possible to easily and accurately form the cavity 11 below the heating resistor 4 using semiconductor manufacturing technology. it can. Therefore, the number of manufacturing steps can be reduced as compared with the conventional method.

  In the present embodiment, the size (cross-sectional area) of the etching window 7a having the cross-sectional shape of the cavity 11 is the same as the effective heating area of the heating resistor 4, but the present invention is limited to this. Instead, the heat generating resistor 4 may have a heat generation effective area larger than that. As described above, when the cross-sectional area of the cavity 11 is increased, the heat dissipation performance is improved because the path through which the heat generated in the heating resistor 4 escapes to the substrate 2 is increased, and as a result, the heat generation efficiency is improved. Therefore, by making the size of the etching window 7 a larger than the effective heating area of the heating resistor 4, the heat insulation performance between the heating resistor 4 and the substrate 2 can be improved.

A method of manufacturing the thermal head 1 according to the second embodiment of the present invention will be described with reference to FIG.
In the description of the present embodiment, portions having the same configuration as those of the thermal head 1 according to the first embodiment described above are denoted by the same reference numerals and description thereof is omitted.

  The manufacturing method according to this embodiment is different from the manufacturing method of the thermal head 1 according to the first embodiment shown in FIG. 2 in that the formation process of the cavity 11 is made in two stages (two steps). Yes. The manufactured thermal head 1 is the same as that in the first embodiment.

In the manufacturing method according to the present embodiment, the step of forming the cavity 11 is performed through the substrate penetration step in which etching is performed from the back surface side of the substrate 2 until it reaches the back surface of the undercoat 3 by dry etching using RIE (FIG. 4F). And the undercoat thinning process (see FIG. 4G) for removing a part of the undercoat 3 and thinning the undercoat 3 located above the cavity 11. Yes.
Such a manufacturing method is used when the materials of the substrate 2 and the undercoat 3 are different, for example, silicon and SiO ₂ . This is because the optimum etching conditions differ between the etching of the substrate 2 and the etching of the undercoat 3. Therefore, in this embodiment, the formation process of the cavity 11 can be divided into conditions suitable for etching the substrate 2 and conditions suitable for etching the undercoat 3. For example, dry etching performed by introducing a gas such as SF ₆ is used in the substrate penetration process for forming the through hole 9 in the substrate 2 made of silicon, and a gas such as CF ₄ or CHF ₃ is introduced in the undercoat thinning process. Dry etching performed in the above or wet etching using an HF solution can be used.

According to the thermal head 1 according to the present embodiment configured as described above, since the processing accuracy in the thickness direction of the undercoat 3 is improved, the controllability of the thickness of the undercoat 3 that affects the heat insulation performance. Therefore, high heat insulation performance is obtained.
Further, the thermal head 1 having uniform characteristics over the entire wafer can be obtained.
Other functions and effects are the same as those of the above-described first embodiment, and thus description thereof is omitted here.

A method of manufacturing the thermal head 1 according to the third embodiment of the present invention will be described with reference to FIG.
In the description of the present embodiment, portions having the same configuration as those of the thermal head 1 according to the above-described embodiment are denoted by the same reference numerals and description thereof is omitted.

  In the manufacturing method according to the present embodiment, a step of forming the convex portion 2a is added to a position corresponding to the hollow portion 11 of the substrate 2 (that is, a region covered by the heating resistor 4). This is different from the method for manufacturing the thermal head 1 according to the first embodiment shown in FIG. The manufactured thermal head 1 is the same as that in the first embodiment.

Next, a method for manufacturing the thermal head 1 according to this embodiment will be described.
First, as shown to Fig.5 (a), the convex part 2a is formed in the position corresponding to the cavity 11 used as a heat insulation layer in the surface of the board | substrate 2. As shown in FIG. The forming method is a dry etching method or a wet etching method. The thickness of the convex part processing is several tens of μm to several hundreds of μm.

Thereafter, as shown in FIG. 5B, the undercoat 3 is formed so that the convex portions 2a are covered and become flat.
Then, the formation of the etching mask 7 shown in FIG. 5C, the formation of the heating resistor 4 shown in FIG. 5D, the formation of the wiring 5 shown in FIG. 5E, and the protective film shown in FIG. 6 is formed in the same manner as the manufacturing method described with reference to FIG.

Finally, as shown in FIG. 5G, using the etching mask 7 formed in FIG. 5C as a mask, the substrate 2 is etched from the back side of the substrate 2 by a dry etching method by RIE. A hollow portion 11 that reaches the back surface of the undercoat 3 from the back surface side is formed.
The thickness of the substrate 2 is several hundred μm. Therefore, it is necessary to penetrate through the substrate 2 having a thickness of several hundreds μm, and a highly precise processing technique is required. In the manufacturing method of FIG. 2, the shape of the cavity 11 near the undercoat 3 is transferred after the etching mask 7 formed on the back surface of the substrate 2 penetrates the substrate 2. For this reason, high processing accuracy is required in order to make the shape of the cavity near the undercoat 3 that affects the heat insulation performance into a desired size after the substrate 2 is penetrated.
Also, when silicon is used as the substrate material, SiO ₂ is used as the undercoat material, and dry etching is performed by introducing a gas such as SF _{6 in the} substrate penetration process, a large selectivity between silicon and SiO ₂ can be obtained. it can.

According to the manufacturing method according to the present embodiment, the shape of the cavity 11 near the undercoat 3 is the shape of the protrusion formed on the substrate 2 in the protrusion formation step. For this reason, the shape of the cavity 11 in the vicinity of the undercoat 3 becomes a desired size even after the substrate 2 having a thickness of several hundred μm is subjected to the penetration process. Therefore, the processing accuracy of the cavity 11 can be easily improved. In particular, in a line thermal head in which a large number of heating resistors 4 are arranged in a straight line, it is necessary to arrange four to sixteen heating resistors 4 per 1 mm. The heating resistor 4 can be arranged, which is very effective for obtaining a highly efficient line thermal head.
Further, the surface of the undercoat 3 may be flattened after the step of forming the undercoat 3 in FIG. 5B so that the convex portions 2a are covered. As the flattening process, a grinding process using a grindstone, a mechanical polishing process using a polishing liquid containing an abrasive having a fine particle diameter, CMP, or the like is used. By doing in this way, thickness control of the undercoat 3 located above the cavity part 11 becomes easy. Further, the step on the surface of the undercoat 3 can be eliminated, and the subsequent film forming steps can be performed satisfactorily, so that the overall mechanical strength of the heating resistor 4 can be further improved.
Furthermore, as a method of forming the undercoat 3, a method of applying a paste material such as glass paste by a screen printing method, drying, and firing can be used. This method can form a thick undercoat 3 layer of several tens of μm, and is an effective manufacturing method for improving the heat insulating performance in the vicinity of the cavity 11. Moreover, a flat surface can be obtained by applying a glass paste to an uneven surface. Therefore, it becomes easy to control the thickness of the undercoat 3 located on the upper side of the cavity 11. Further, the step on the surface of the undercoat 3 can be eliminated, and the subsequent film forming steps can be performed satisfactorily, so that the overall mechanical strength of the heating resistor 4 can be further improved.
Other functions and effects are the same as those of the above-described first embodiment, and thus description thereof is omitted here.

A thermal head 41 and its manufacturing method according to the fourth embodiment of the present invention will be described below with reference to FIGS. 6A and 6B are views showing a thermal head according to a fourth embodiment of the present invention. FIG. 6A is a plan view, and FIG. 6B is a CC longitudinal sectional view of FIG. FIG. 7 is a process diagram for explaining the manufacturing method of the thermal head of FIG. 6, and is a DD longitudinal sectional view of FIG.
In the description of the present embodiment, portions having the same configuration as those of the thermal head 1 according to the above-described embodiment are denoted by the same reference numerals and description thereof is omitted.

The thermal head 41 according to the present embodiment is different from the thermal head 1 described above in that the undercoat 3 is formed only on the peripheral portion of the heating resistor 4.
This is because the portion far from the heating resistor 4 does not contribute to printing. Therefore, by forming the undercoat 3 only on the heating resistor 4 and its peripheral portion, the heat capacity of the region not contributing to printing is reduced, and the efficiency is improved. This is because advantages such as an increase in response speed can be obtained.

Next, a method for manufacturing the thermal head 41 according to this embodiment will be described.
First, as shown in FIG. 7A, a region for embedding the undercoat 3 is formed on the surface of the substrate 2, and the substrate 2 is etched so that the periphery of the substrate 2 is the highest. The positions corresponding to the heating resistor 4 and the cavity portion 11 and the irregularities on the periphery thereof are formed so that the positions corresponding to the heating resistor 4 and the cavity portion 11 become the convex portions 2b. The etching method of the substrate 2 is a dry etching method or a wet etching method. The thickness of the convex processing of the substrate 2 is several tens of μm to several hundreds of μm. The difference in height between the highest portion of the substrate 2 and the periphery of the heating resistor 4 is several μm to several tens of μm.

Thereafter, as shown in FIG. 7B, the undercoat 3 is formed so that the convex portions 2b are covered and flattened.
Then, the formation of the etching mask 7 shown in FIG. 7C, the formation of the heating resistor 4 shown in FIG. 7D, the formation of the wiring 5 shown in FIG. 7E, and the protective film shown in FIG. 6 is formed in the same manner as the manufacturing method described with reference to FIG.

  Finally, as shown in FIG. 7G, using the etching mask 7 formed in FIG. 7C as a mask, the substrate 2 is etched from the back side of the substrate 2 by a dry etching method by RIE. A hollow portion 11 that reaches the back surface of the undercoat 3 from the back surface side is formed.

According to the manufacturing method according to the present embodiment, the shape of the undercoat 3 in the vicinity of the cavity portion 11 is as the shape of the convex portion 2b, so that the cavity portion 11 can be easily and accurately provided below the heating resistor 4. Can be well formed.
As a method for forming the undercoat 3, a method of applying a paste material such as glass paste by a screen printing method, drying, and firing can be used. This method can form a thick undercoat 3 layer of several tens of μm, and is an effective manufacturing method for improving the heat insulating performance in the vicinity of the cavity 11.
Furthermore, a flat surface can be obtained by applying a glass paste to an uneven surface. Therefore, it becomes easy to control the thickness of the undercoat 3 located on the upper side of the cavity 11.
Furthermore, the step on the surface of the undercoat 3 can be eliminated, and the subsequent film forming steps can be performed satisfactorily, so that the overall mechanical strength of the heating resistor 4 can be further improved. .
Other functions and effects are the same as those of the above-described first embodiment, and thus description thereof is omitted here.

A thermal head 51 and a manufacturing method thereof according to the fifth embodiment of the present invention will be described below with reference to FIGS.
8A and 8B are views showing a thermal head according to a fifth embodiment of the present invention, in which FIG. 8A is a plan view and FIG. 8B is an EE longitudinal sectional view of FIG. FIG. 9 is a process diagram for explaining the manufacturing method of the thermal head of FIG. 8, and is a FF vertical sectional view of FIG.
In the description of the present embodiment, portions having the same configuration as those of the thermal head 1 according to the above-described embodiment are denoted by the same reference numerals and description thereof is omitted.

  The thermal head 51 according to the present embodiment is different from the thermal head 1 described above in that the undercoat 3 is composed of an upper layer undercoat 3a and a lower layer undercoat 3b made of different materials.

Next, a method for manufacturing the thermal head 51 according to this embodiment will be described.
First, as shown in FIG. 9A, a lower layer undercoat 3 b is formed on the surface of the substrate 2. As the material of the lower layer undercoat 3b, a resin such as polyimide is used. As a formation method, after applying polyimide on the varnish by spin coating, drying, baking, or fusion by heating or pressing is used. The thickness dimension is several μm to several hundred μm.

Thereafter, as shown in FIG. 9B, an upper layer undercoat 3a is formed on the surface of the lower layer undercoat 3b. As the material of the upper undercoat 3a, inorganic materials such as SiO ₂ , SiO, Al ₂ O ₃ , Ta ₂ 0 ₅ , SiAlON, and Si ₃ N ₄ are used, and any one of a sputtering method, a vacuum evaporation method, and a CVD method is used. It is formed by the method. The thickness dimension is several μm to several tens μm.

  Then, the formation of the etching mask 7 shown in FIG. 9C, the formation of the heating resistor 4 shown in FIG. 9D, the formation of the wiring 5 shown in FIG. 9E, and the protective film shown in FIG. 6 and the through-substrate formation shown in FIG. 9G are performed in the same manner as the manufacturing method described with reference to FIG.

Finally, as shown in FIG. 9 (h), the lower layer undercoat 3b is removed until the upper layer undercoat 3a is reached. When a resin is used as the material, the resin is removed by dry etching using CF ₄ gas or O ₂ gas or wet etching with an alkaline solution. At this time, since the upper undercoat 3a is made of different materials, it functions as an etching stop layer.

According to the manufacturing method according to the present embodiment, the material of the undercoat 3 is different between the upper layer undercoat 3a and the lower layer undercoat 3b, and the optimum etching conditions are different from each other. In the forming step, the upper undercoat 3a can function as an etching stop layer, and only the lower undercoat 3b can be removed, and the processing accuracy in the thickness direction of the undercoat 3 is improved, and the undercoat affects the heat insulation performance. This is because the controllability of the thickness of the coat 3 is improved and high heat insulation performance can be obtained.
Further, it is possible to obtain the thermal head 51 having uniform characteristics over the entire wafer.
Other functions and effects are the same as those of the above-described first embodiment, and thus description thereof is omitted here.

A thermal head 61 and a manufacturing method thereof according to the sixth embodiment of the present invention will be described below with reference to FIGS.
In the description of the present embodiment, portions having the same configuration as those of the thermal head 1 according to the above-described embodiment are denoted by the same reference numerals and description thereof is omitted.

  In the thermal head 61 according to the present embodiment, the undercoat 3 is located between the upper undercoat 3a, the lower undercoat 3b, and the undercoats 3a and 3b, and the etching stop is made of a material different from that of the lower undercoat. The thermal head 1 is different from the above-described thermal head 1 in that it is constituted by the layer 3c.

Next, a method for manufacturing the thermal head 61 according to this embodiment will be described.
First, as shown in FIG. 11A, a lower layer undercoat 3 b is formed on the surface of the substrate 2. As a material for the lower layer undercoat 3b, an inorganic material such as SiO ₂ , SiO, Al ₂ O ₃ , Ta ₂ O ₅ , SiAlON, or Si ₃ N ₄ is used in addition to a resin such as polyimide. The thickness dimension is several tens μm to several hundreds μm.

  Thereafter, as shown in FIG. 11B, an etching stop layer 3c is formed on the surface of the lower layer undercoat 3b. As a material of the etching stop layer 3c, a metal material such as Al is used, and it is formed by any one of a sputtering method, a vacuum deposition method, and a CVD method.

  Then, as shown in FIG. 11C, an upper undercoat 3a is formed on the surface of the etching stop layer 3c. The material of the upper undercoat 3a may be the same as the material of the lower undercoat 3b as long as it is different from the etching stop layer 3c.

  Next, the formation of the etching mask 7 shown in FIG. 11 (d), the formation of the heating resistor 4 shown in FIG. 11 (e), the formation of the wiring 5 shown in FIG. 11 (f), and the protection shown in FIG. 11 (g). The formation of the film 6 and the through-substrate formation shown in FIG. 11H are performed in the same manner as the manufacturing method described with reference to FIG.

  Thereafter, as shown in FIG. 11I, the lower undercoat 3b is removed until the etching stop layer 3c is reached. At this time, since the material of the etching stop layer 3c is different from the material of the lower layer undercoat 3b, the etching stop layer 3c is not etched or the etching amount of the etching stop layer 3c is very small.

Finally, as shown in FIG. 11J, the etching stop layer 3c is removed. Note that the etching stop layer 3c is made of an inorganic material such as SiO ₂ , SiO, Al ₂ O ₃ , Ta ₂ O ₅ , SiAlON, Si ₃ N _4, or a low thermal conductive material such as a resin and has a thickness of several μm or less. In this case, this step can be omitted.

According to the manufacturing method according to the present embodiment, the etching stop layer 3c made of a material different from that of the lower layer undercoat 3b is formed between the upper layer undercoat 3a and the lower layer undercoat 3b. This further improves the controllability of the thickness of the undercoat (i.e., the upper undercoat 3a).
Further, since the etching stop layer 3c located above the cavity 11 is removed, a metal material having good thermal conductivity can be used as the material of the etching stop layer 3c, and the upper undercoat 3a, the lower layer undercoat can be used. The degree of freedom in selecting materials for the coat 3b and the etching stop layer 3c is increased, and the film thickness control of the upper undercoat 3a can be made easier.

A thermal head 71 and a manufacturing method thereof according to a seventh embodiment of the present invention will be described below with reference to FIGS.
12A and 12B are views showing a thermal head according to a seventh embodiment of the present invention, in which FIG. 12A is a plan view and FIG. 12B is a JJ longitudinal sectional view of FIG. FIG. 13 is a process diagram for explaining the manufacturing method of the thermal head of FIG. 12, and is a KK longitudinal sectional view of FIG. In the description of the present embodiment, portions having the same configuration as those of the thermal head 1 according to the above-described embodiment are denoted by the same reference numerals and description thereof is omitted.

In the thermal head 71 according to the present embodiment, the size of the space surrounded by the side wall portion (that is, the peripheral wall portion of the thin portion 10) on the inner wall that contacts the undercoat 3 of the cavity portion 11 in the plan view is on the back surface of the substrate 2. This is different from the above-described thermal head 1 in that it is configured to be larger than the size of the formed etching window 7a in plan view. In other words, the size of the through hole 9 formed in the substrate 2 in plan view is configured to be smaller than the size of the thin portion 10 of the undercoat 3 in plan view. The thin portion 10 is formed by forming a step by recessing a part of the undercoat 3. Therefore, the horizontal cross-sectional area of the thin-walled portion 10 is equal to the horizontal (horizontal) cross-sectional area of the recessed portion of the undercoat 3. The size in plan view of the through hole 9 of the substrate 2 forming the cavity 11 and the size in plan view of the recessed portion of the undercoat 3 may be referred to as a diameter.
This is because it is advantageous that the size of the portion of the hollow portion 11 in contact with the undercoat 3 is larger in terms of heat insulation performance.
In terms of mechanical strength, the thicker the partition 12 between the cavities 11 formed in the substrate 2, the more advantageous. Since the dot interval of the thermal head is determined by the product specifications, in the thermal head described in the first to sixth embodiments, the size of the portion of the cavity portion 11 in contact with the undercoat 3 and the etching window 7a on the back surface. When the sizes in the plan view are equal and higher heat insulation performance is obtained, the partition wall 12 must be made thin at the expense of mechanical strength.

Next, a method for manufacturing the thermal head 71 according to this embodiment will be described.
First, as shown in FIG. 13A, a convex portion 2a is formed on the surface of the substrate 2 at a position corresponding to the cavity 11 serving as a heat insulating layer. The forming method is a dry etching method or a wet etching method. The thickness of the convex part processing is several tens of μm to several hundreds of μm.

Thereafter, as shown in FIG. 13B, the undercoat 3 is formed so that the convex portions 2a are covered and become flat.
Then, the formation of the etching mask 7 shown in FIG. 13C, the formation of the heating resistor 4 shown in FIG. 13D, the formation of the wiring 5 shown in FIG. 13E, and the protective film shown in FIG. 6 is formed in the same manner as the manufacturing method described with reference to FIG.
When the etching mask 7 is formed, as described above, the etching window 7a smaller than the size of the convex portion formed in FIG. 13A is patterned.

  Finally, as shown in FIG. 13G, using the etching mask 7 formed in FIG. 13C as a mask, the substrate 2 is etched from the back side of the substrate 2 by a dry etching method by RIE. A hollow portion 11 that reaches the back surface of the undercoat 3 from the back surface side is formed. In this process. Etching proceeds vertically to the thickness direction of the substrate 2 until the undercoat 3 is reached, and then the undercoat 3 functions as an etching stop layer, and the etching is performed in a direction parallel to the back surface of the substrate 2 (ie, the substrate 2 In the direction perpendicular to the thickness direction). As a result, the projection 2a of the substrate 2 formed in FIG. 13A is removed, and the size of the cavity 11 near the undercoat 3 in plan view is larger than the size of the etching window 7a in plan view.

According to the thermal head 71 according to the present embodiment, higher thermal insulation performance can be obtained while keeping the mechanical strength of the thermal head itself high.
In addition, since the partition wall 12 can be made thick, it has an advantage that it is easy to manufacture.
Other functions and effects are the same as those of the above-described first embodiment, and thus description thereof is omitted here.

FIG. 14 is a diagram showing an example of a configuration that covers the lower end surface of the thermal head according to the first embodiment shown in FIG. 1. In FIG. 14, elements common to the example shown in FIG. 1 are denoted by common reference numerals, and detailed description thereof is omitted.
As shown in FIG. 14, the second substrate 13 is bonded to the lower surface of the substrate 2 in the thermal head 81 so as to close the plurality of cavities 11.
As the second substrate 13, an insulating substrate such as a glass substrate, a silicon substrate, or an alumina ceramic substrate is used.
By configuring in this way, the lower end surfaces of the partition walls 12 are joined (coupled) to each other by the second substrate 13, so that the mechanical strength of the entire thermal head can be increased.
Moreover, since the lower end of each cavity 11 is closed by the second substrate 13 and each cavity 11 forms an independent sealed space, the heat insulation performance can be further enhanced.
In the present embodiment, for example, a glass substrate is attached as the second substrate 13 to the back surface of the silicon substrate 2 in a vacuum state, whereby the sealed cavity 8 can be evacuated.
By doing in this way, the heat conduction by the air in the cavity part 8 can be eliminated, and the heat insulation effect can be further improved. Further, it is possible to avoid the pressure in the sealed cavity 8 from fluctuating according to the temperature change caused by the operation of the heating resistor 4.
On the other hand, you may decide to enclose the gas of the pressure state higher than atmospheric pressure in the cavity part 11. FIG. In this way, when an external force is applied to the heat generating surface of the heat generating resistor 4 composed of a thin film, the internal pressure of the cavity 8 resists this external force and prevents the heat generating surface from being deformed, or The effect of restoring the original state after deformation can be obtained.
In this case, it is preferable to use an inert gas such as N ₂ , He, or Ar as the gas sealed in the cavity 11. By doing in this way, it can prevent that the heat generating resistor 4 will be oxidized by the sealing gas which permeate | transmits the undercoat 3. FIG. Moreover, when joining the 2nd board | substrate 13 and a board | substrate by anodic bonding, it superheats at the high temperature of 200-400 degreeC at the time of joining. Therefore, by sealing the inert gas, it is possible to prevent a problem that the heating resistor 4 is oxidized or deteriorated due to overheating during anodic bonding, and a thermal head having high reliability and reproducibility can be configured. it can.

Moreover, you may comprise so that the several cavity part 11 formed separately for every heating resistor 4 may mutually communicate. FIG. 15 is a vertical sectional view of a main part showing thermal heads 91 and 101 provided with communication holes 14 communicating between the cavity portions 11 as a modification of the thermal head 81 shown in FIG. The example provided in the partition 12 side, (b) is a figure which shows the example provided in the 2nd board | substrate 13 side. As shown in FIG. 15A, a groove is formed in the partition 12 on the surface of the substrate 2 where the second substrate 13 is bonded so that the plurality of cavities 11 communicate with each other. Thus, a communication hole 14 is provided. As shown in FIG. 15B, the communication hole 14 can also be provided by forming a groove on the surface of the second substrate 13 bonded to the substrate 2 on the substrate 2 side. By providing the communication hole 14 in this way, there is an advantage that the pressure state in the cavity portion 11 for all the heating resistors 4 can be made constant even if the temperature state is different for each heating resistor 4.
In the above description, the case where the cavity portion 11 is sealed by the second substrate 13 has been described. Instead, an opening for opening the cavity portion 11 to the substrate or the second substrate is opened. It may be formed. By doing in this way, the internal pressure in the cavity 8 provided in each heating resistor 4 can be kept at a uniform atmospheric pressure. Since the pressure in the cavity 11 affects the heat conduction, the heating characteristics of the respective heating resistors 4 can be made uniform by opening the cavity 11 to the atmosphere.

Next, a thermal printer 30 according to an embodiment of the present invention will be described below with reference to FIG.
A thermal printer 30 according to the present embodiment includes a platen roller 32 that is horizontally disposed on a main body frame 31 and thermal heads 1 and 10 according to the first to tenth embodiments that are pressed against the platen roller 32 with a thermal paper 33 interposed therebetween. 41, 51, 61, 71, 81, 91, 101. The thermal heads 1, 41, 51, 61, 71, 81, 91, 101 have a plurality of heating resistors 4 arranged in the longitudinal direction of the platen roller 32, and are thermally sensitive with a predetermined pressing force by the pressing mechanism 34. It can be pressed against the paper 33. In the figure, reference numeral 35 denotes a paper feed drive motor.

  According to the thermal printer 30 according to the present embodiment, the thermal efficiency of the thermal heads 1, 41, 51, 61, 71, 81, 91, 101 is high, and printing can be performed on the thermal paper 23 with less power. Therefore, it is possible to extend the duration of the battery.

  In each of the above-described embodiments, the thermal heads 1, 41, 51, 61, 71, 81, 91, 101 and the thermal printer 30 that directly performs thermal coloring have been described. However, the present invention is not limited to this. Also, the present invention can be applied to heating resistance element parts other than the thermal heads 1, 41, 51, 61, 71, 81, 91, 101 and printer apparatuses other than the thermal printer 30.

  For example, the heating resistor element component can be applied to uses such as a thermal type or valve type inkjet head that ejects ink by heat. Further, a thermal erasing head having substantially the same structure as the thermal heads 1, 41, 51, 61, 71, 81, 91, 101, a fixing heater such as a printer requiring thermal fixing, and a thin film of an optical waveguide type optical component The same effect can be obtained even with an electronic component having other film-like heating resistance element components such as a heating resistance element.

  In addition, as a printer, it can be applied to a thermal transfer printer using a sublimation type or melt type transfer ribbon, a rewritable thermal printer capable of coloring and proofing a printing medium, a heat-sensitive active adhesive label printer which exhibits adhesiveness by heating, and the like. .

It is a figure which shows the thermal head which is the heating resistive element component which concerns on 1st Embodiment of this invention, (a) is a top view, (b) is an AA longitudinal cross-sectional view of (a). It is process drawing explaining the manufacturing method of the thermal head of FIG. 1, and is BB longitudinal cross-sectional view of Fig.1 (a). It is the principal part top view which looked at the thermal head shown in FIG. 1 from the downward direction. It is process drawing explaining the manufacturing method of the thermal head which concerns on 2nd Embodiment of this invention. It is process drawing explaining the manufacturing method of the thermal head which concerns on 3rd Embodiment of this invention. It is a figure which shows the thermal head which concerns on 4th Embodiment of this invention, (a) is a top view, (b) is CC longitudinal cross-sectional view of (a). It is process drawing explaining the manufacturing method of the thermal head of FIG. 6, and is DD longitudinal cross-sectional view of Fig.6 (a). It is a figure which shows the thermal head which concerns on 5th Embodiment of this invention, (a) is a top view, (b) is EE longitudinal cross-sectional view of (a). It is process drawing explaining the manufacturing method of the thermal head of FIG. 8, and is FF longitudinal cross-sectional view of Fig.8 (a). It is a figure which shows the thermal head which concerns on 6th Embodiment of this invention, (a) is a top view, (b) is a GG longitudinal cross-sectional view of (a). It is process drawing explaining the manufacturing method of the thermal head of FIG. 10, and is HH longitudinal cross-sectional view of Fig.10 (a). It is a figure which shows the thermal head which concerns on 7th Embodiment of this invention, (a) is a top view, (b) is JJ longitudinal cross-sectional view of (a). It is process drawing explaining the manufacturing method of the thermal head of FIG. 12, and is KK longitudinal cross-sectional view of Fig.12 (a). It is a principal part longitudinal cross-sectional view which shows the thermal head which concerns on other embodiment of this invention. As a modification of the thermal head shown in FIG. 14, it is a principal part longitudinal cross-sectional view which shows the thermal head which provided the communicating hole which connects between cavity parts, Comprising: (a) is an example provided in the partition side, (b) These are figures which show the example provided in the 2nd board | substrate side. 1 is a longitudinal sectional view showing a thermal printer according to an embodiment of the present invention.

Explanation of symbols

1 Thermal head (heating resistance element parts)
2 Substrate (support substrate)
2a Convex 3 Undercoat (insulating film)
3a Upper layer undercoat (second insulating film)
3b Lower layer undercoat (first insulating film)
3c Etching stop layer 4 Heating resistor 5 Wiring 5a Common wiring (wiring)
5b Individual wiring (wiring)
7 Etching mask 7a Etching window 9 Through hole 10 Thin portion 11 Hollow portion 13 Second substrate 14 Communication hole 30 Thermal printer 41 Thermal head (heating resistance element component)
51 Thermal head
61 Thermal head (heating resistance element parts)
71 Thermal head (heating resistance element parts)
81 Thermal head (heating resistance element parts)
91 Thermal head (heating resistance element parts)
101 Thermal head (heating resistance element parts)

Claims (11)

On the insulating film laminated on the support substrate, a plurality of heating resistors are arranged at intervals, and wiring for supplying power to each of the plurality of heating resistors is connected,
In a region covered with each heating resistor of the support substrate, a through-hole penetrating the support substrate in the thickness direction is provided,
A heating resistor element component in which a thin portion thinner than the surrounding area is provided in a region covered with each heating resistor of the insulating coating.   The heating resistor element component according to claim 1, wherein each of the through hole and the thin wall portion is individually provided for each heating resistor.   The heating resistor element component according to claim 2, wherein the size of the through hole in a plan view is smaller than a size in a plan view of the thin portion.   The heating resistance element component according to any one of claims 1 to 3, wherein a lower end of the through hole is covered with a second substrate. An insulating film forming step of forming an insulating film on the surface of the support substrate;
An etching mask forming step of forming an etching mask having an etching window on the back surface of the support substrate;
A heating resistor forming step of forming a heating resistor at a position corresponding to the etching window on the insulating film;
A wiring forming step of forming a wiring connected to the heating resistor;
Using the etching mask as a mask, etching is performed from the back side of the support substrate to form a through hole in the support substrate and to form a thin portion having a thickness thinner than the surroundings in the insulating coating. The manufacturing method of the heating resistive element component containing these. An insulating film forming step of forming an insulating film on the surface of the support substrate;
An etching mask forming step of forming an etching mask having an etching window on the back surface of the support substrate;
A heating resistor forming step of forming a heating resistor at a position corresponding to the etching window on the insulating film;
A wiring forming step of forming a wiring connected to the heating resistor;
Using the etching mask as a mask, etching from the back side of the support substrate to form a through hole in the support substrate; and
A method of manufacturing a heating resistor element component, comprising: forming a thin portion having a thickness thinner than the surroundings in the insulating coating by etching from the back side of the support substrate using the etching mask as a mask. A convex forming step of forming a convex on the surface of the support substrate;
An insulating film forming step of forming an insulating film on the surface of the support substrate;
An etching mask forming step of forming an etching mask having an etching window at a position corresponding to the convex portion on the back surface of the support substrate;
A heating resistor forming step of forming a heating resistor at a position corresponding to the etching window on the insulating film;
A wiring forming step of forming a wiring connected to the heating resistor;
A method of manufacturing a heating element element including a cavity forming step of forming a through hole in the support substrate by etching from the back side of the support substrate using the etching mask as a mask. An etching step of forming a region embedded with an insulating film on the surface of the support substrate and etching the surface of the support substrate so that the periphery of the support substrate is high;
An insulating film forming step of forming an insulating film on the surface of the support substrate;
An etching mask forming step of forming an etching mask having an etching window on the back surface of the support substrate;
A heating resistor forming step of forming a heating resistor at a position corresponding to the etching window on the insulating film;
A wiring forming step of forming a wiring connected to the heating resistor;
A method of manufacturing a heating element element including a cavity forming step of forming a through hole in the support substrate by etching from the back side of the support substrate using the etching mask as a mask. A first insulating film forming step of forming a first insulating film on the surface of the support substrate;
A second insulating film forming step of forming a second insulating film on the surface of the first insulating film;
An etching mask forming step of forming an etching mask having an etching window on the back surface of the support substrate;
A heating resistor forming step of forming a heating resistor at a position corresponding to the etching window on the second insulating film;
A wiring forming step of forming a wiring connected to the heating resistor;
A method of manufacturing a heating element element including a cavity forming step of forming a through hole in the support substrate and the first insulating film by etching from the back side of the support substrate using the etching mask as a mask. A first insulating film forming step of forming a first insulating film on the surface of the support substrate;
An etching stop layer forming step of forming an etching stop layer on the surface of the first insulating film;
A second insulating film forming step of forming a second insulating film on the surface of the etching stop layer;
An etching mask forming step of forming an etching mask having an etching window on the back surface of the support substrate;
A heating resistor forming step of forming a heating resistor at a position corresponding to the etching window on the second insulating film;
A wiring forming step of forming a wiring connected to the heating resistor;
Using the etching mask as a mask, etching is performed from the back side of the support substrate, thereby forming a heating resistance including a cavity forming step for forming a through hole in the support substrate, the first insulating film, and the etching stop layer. Manufacturing method of element parts.   A thermal printer provided with the thermal head which consists of a heating resistive element component in any one of Claims 1-4.

Images