JP4619876B2 - Heating resistance element parts and printer - Google Patents

Heating resistance element parts and printer Download PDF

Info

Publication number
JP4619876B2
JP4619876B2 JP2005182471A JP2005182471A JP4619876B2 JP 4619876 B2 JP4619876 B2 JP 4619876B2 JP 2005182471 A JP2005182471 A JP 2005182471A JP 2005182471 A JP2005182471 A JP 2005182471A JP 4619876 B2 JP4619876 B2 JP 4619876B2
Authority
JP
Japan
Prior art keywords
heating resistor
cavity
silicon substrate
thermal head
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2005182471A
Other languages
Japanese (ja)
Other versions
JP2007001087A (en
Inventor
法光 三本木
義則 佐藤
利光 師岡
法宜 東海林
裕彦 根本
寛 高橋
Original Assignee
セイコーインスツル株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by セイコーインスツル株式会社 filed Critical セイコーインスツル株式会社
Priority to JP2005182471A priority Critical patent/JP4619876B2/en
Publication of JP2007001087A publication Critical patent/JP2007001087A/en
Application granted granted Critical
Publication of JP4619876B2 publication Critical patent/JP4619876B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Description

The present invention relates to a heating resistor element component, and printer.

  2. Description of the Related Art Conventionally, as a thermal head that is a heating resistor element component, for example, a structure shown in Patent Document 1 is known. This thermal head has a plurality of heating resistors arranged at intervals on the surface of an insulating substrate consisting of an insulating substrate body and an underglaze layer formed on the surface of the insulating substrate body. It has a structure in which wiring for supplying power to the body is laid. By providing a strip-shaped cavity extending in the arrangement direction of the heating resistors at an intermediate position in the thickness direction of the underglaze layer, the strip-shaped cavity functions as a heat insulating layer having a low thermal conductivity, thereby generating a heating resistor. It is considered to improve the heat generation efficiency by reducing the amount of heat flowing from the body to the insulating substrate side.

The band-shaped cavity is formed in the underglaze layer by embedding the band-shaped cellulosic resin when the underglaze layer is formed and evaporating the cellulosic resin during the firing process. .
JP-A-6-166197

However, the thermal head of Patent Document 1 has the following drawbacks.
First, by providing a hollow portion under the heating resistor, there is a heat insulation effect toward the insulating substrate body, but the underglaze layer itself is relatively formed in order to form the hollow portion at an intermediate position in the thickness direction. It needs to be thick. For this reason, the amount of heat transmitted to the underglaze layer is accumulated in the underglaze layer, and there is a problem that the amount of heat transmitted to the surface side of the heat generating resistor is reduced and the heat generation efficiency is lowered.

  Second, the dimensional accuracy of the resin material that is evaporated to form the cavity is low, and it is not possible to form a precisely shaped cavity. For this reason, since the cavity is formed in a strip shape so as to straddle the plurality of heating resistors along the arrangement direction of the plurality of heating resistors, the strength of the underglaze layer at the position of the heating resistors is low, and printing is performed. In this case, there is a drawback that the cavity is easily crushed by the pressure applied to the heating resistor. In particular, since the drum sandwiching the printing paper with the heating resistor is arranged along the arrangement direction of the heating resistors, the underglaze layer may break along the arrangement direction of the heating resistors.

  Thirdly, the conventional method of providing a cavity at the middle position in the thickness direction of the underglaze layer is to print and evaporate an evaporating component layer made of a cellulosic resin on the surface of the lower layer of the sander glaze, An underglaze surface layer forming paste made of the same insulating material as the underglaze lower layer is formed on the surface and dried. Further, the insulating material laminated in this way is baked at a temperature of about 1300 ° C. to evaporate the evaporation component layer. Accordingly, there is a problem that a complicated process is required to provide the hollow portion below the heating resistor, and time is required for manufacturing.

  The present invention has been made in view of the above-described circumstances, and improves the heating efficiency of the heating resistor to reduce power consumption, improves the strength of the substrate under the heating resistor, and is simple and inexpensive. It is an object of the present invention to provide a thermal head that can be manufactured, a manufacturing method thereof, and a thermal printer.

In order to achieve the above object, the present invention provides the following means.
In the present invention, a plurality of heating resistors are arranged on a silicon substrate at intervals, and wiring for supplying electric power to each heating resistor is connected. In the region covered by each heating resistor on the silicon substrate. There is provided a heating resistance element component in which a hollow portion penetrating the silicon substrate in the thickness direction is individually provided for each heating resistance .

  According to the present invention, the heating resistor is provided on the silicon substrate, and the cavity that penetrates the silicon substrate in the thickness direction is formed below each heating resistor, so that the cavity functions as a heat insulating layer. This prevents heat transfer to the silicon substrate. Moreover, since the cavity is directly provided in the silicon substrate and does not have an underglaze layer that functions as a heat storage layer, the heat generated in the heating resistor is transmitted to the upper side of the heating resistor without being stored on the substrate side, It is efficiently used for performing thermal recording on thermal recording paper or the like. Therefore, power consumption in the heating resistor can be suppressed.

  Furthermore, by forming the substrate of the heating resistor with the silicon substrate, the cavity can be easily and accurately formed below the heating resistor by using semiconductor manufacturing technology. Therefore, the number of manufacturing steps can be reduced as compared with the conventional method.

In addition, by providing the silicon substrate with a cavity portion for each heating resistor, the silicon substrate can be left between the cavity portions provided for the adjacent heating resistors. The silicon substrate remaining between the cavities extends in the thickness direction and functions as a support member that supports the pressing force applied from the upper surface of the heating resistor. As a result, even if a pressing force is applied from the upper surface side of the heating resistor during printing or the like, the pressing force is supported by the silicon substrate remaining between the hollow portions, and the pressure resistance performance is improved.

In the above invention, a plurality of the cavity portions may be provided for each heating resistor.
With this configuration, the withstand voltage performance can be further improved by the silicon substrate existing between the cavities even below the heating resistor.

Moreover, in the said invention, it is preferable that the insulating film is provided between the said heating resistor and the said silicon substrate.
With this configuration, the silicon substrate is electrically insulated from the wiring for supplying power to the heating resistor and the pressure resistance performance against the pressing force received by the heating resistor can be further improved by the insulating film. it can.

Moreover, in the said invention, it is good also as the glass substrate being adhere | attached on the surface on the opposite side to the said heating resistor of the said silicon substrate.
By doing so, the silicon substrate is reinforced by the glass substrate to which the silicon substrate is bonded, and breakage due to the cleavage that is peculiar to the silicon substrate can be prevented.

Moreover, in the said invention, it is good also as gas being enclosed with the said cavity part.
By doing in this way, the pressing force applied to the heating resistor is supported by the pressure of the gas sealed in the cavity, and the pressure resistance performance can be further improved.

Moreover, in the said invention, it is preferable that the said gas is an inert gas.
By doing in this way, deterioration, such as oxidation of a heating resistor, can be prevented and reliability and durability can be improved.

Moreover, in the said invention, it is good also as the said cavity part being pressure-reduced.
By doing in this way, the fluctuation | variation of the internal pressure in a cavity part can be suppressed also by the temperature change by the action | operation of a heating resistor.

In addition, the present invention provides a printer including a thermal head made of any one of the above heating resistor elements.
According to the present invention, heat generation efficiency can be improved to save power, and printing can be performed for a long time with less power.

  According to the present invention, it is possible to improve the heat generation efficiency of the heat generating resistor to reduce power consumption, to improve the strength of the substrate under the heat generating resistor, and to be manufactured easily and inexpensively.

A heating resistor element component and a manufacturing method thereof according to the first embodiment of the present invention will be described below with reference to FIGS.
A heating resistor element component 1 according to the present embodiment is a thermal head (hereinafter, referred to as a thermal head 1) used in a thermal printer, and as shown in FIG. The undercoat 3 formed on the undercoat 3, the heating resistor 4 formed on the undercoat 3, the wirings 5 a and 5 b connected to the heating resistor 4, and the upper surfaces of the heating resistor 4 and the wiring 5. The protective film 6 is provided. Reference numeral 7 in the figure denotes an etching mask.

As shown in FIG. 1B, a plurality of the heating resistors 4 are arranged on the surface of the silicon substrate 2 with an interval in one direction.
The wirings 5a and 5b are composed of a common wiring 5a connected to one end in a direction orthogonal to the arrangement direction of the heating resistors 4 and an individual wiring 5b connected to the other end.

  In the silicon substrate 2, a cavity 8 that penetrates in the thickness direction is formed in a region covered with the heating resistor 4. The cavities 8 are individually provided for each of the plurality of heating resistors 4, and the cavities 8 corresponding to the adjacent heating resistors 4 are separated by a partition wall 9 provided in the silicon substrate 2.

Each cavity 8 is provided at a position corresponding to the effective heating area of the heating resistor 4 as shown in FIG. Here, the heat generation effective area of the heat generating resistor 4 means a portion obtained by removing an overlapping portion with the wirings 5 a and 5 b from the range of the heat generating resistor 4.
The inner wall of the cavity 8 extends straight along the thickness direction of the silicon substrate 2. Therefore, the partition wall 9 formed between the cavity portions 8 also extends straight over the entire length in the plate thickness direction.

Next, a method for manufacturing the thermal head 1 according to this embodiment will be described.
In order to manufacture the thermal head 1 according to the present embodiment, first, an undercoat 3 made of an insulating material is formed on the surface of a silicon substrate 2 having a certain thickness as shown in FIG. As the material, SiO 2 , SiO, Al 2 O 3 , Ta 2 0 5 , SiAlON, Si 3 N 4 or the like is used. The thickness dimensions of the silicon substrate 2 and the undercoat 3 are several hundred μm and several hundred μm to several μm, respectively.

Next, as shown in FIG. 2B, an etching mask 7 for etching is formed on the surface of the silicon substrate 2 opposite to the surface on which the undercoat 3 is provided (hereinafter referred to as the back surface). To do. Specifically, an etching mask 7 made of a mask material is formed on the back surface of the silicon substrate 2 by any one of sputtering, vacuum deposition, and CVD. As the mask material, an insulating material such as SiO 2 or Si 3 N 4 or a metal material such as Al or Cr is used.

  After patterning the surface of the etching mask 7 with a photoresist (not shown), dry etching or wet etching by reactive ion etching (RIE) is performed to etch the etching mask 7 to form an etching window 7a. The etching mask 7 is for forming the cavity 8 in the silicon substrate 2, and an etching window 7a is formed in a region where the heating resistor 4 is arranged on the surface side so as to cover the remaining region. Patterned. According to the thermal head 1 according to the present embodiment, as shown in FIG. 3, the size of the etching window 7 a formed by patterning the etching mask 7 is the same as the effective heating area of the heating resistor 4. Yes.

  Next, as shown in FIG. 2C, the heating resistor 4 is formed on the undercoat 3 on the surface of the silicon substrate 2. As the heating resistor 4, a heating resistor material such as Ta-based or silicide-based is used. The heat generating resistor material is formed into a film by sputtering, vapor deposition or the like, and the heat generating resistor 4 is formed by lift-off method or etching method.

Next, as shown in FIG. 2D, a wiring material such as Al, Al-Si, or Au is formed by sputtering or vapor deposition, and the individual wiring 5b and the common wiring 5a are formed by a lift-off method or an etching method. To do. Thereafter, as shown in FIG. 2E, a protective film material such as SiO 2 , Ta 2 O 5 , SiAlON, Si 3 N 4 is formed by sputtering, ion plating, CVD, or the like. The protective film 6 is formed so as to cover the entire surface of the heating resistor 4 and the wirings 5a and 5b on the surface of the silicon substrate 2.

Finally, as shown in FIG. 2 (f), the silicon substrate 2 is etched from the back side of the silicon substrate 2 by the dry etching method by RIE, using the etching mask 7 formed in FIG. 2 (b) as a mask. Then, the cavity 8 reaching the back surface of the undercoat 3 from the back surface side is formed.
Thereby, as shown in FIG. 1, the thermal head 1 is manufactured.

  According to the thermal head 1 according to the present embodiment configured as described above, an extremely thin undercoat 3 is provided below the heat generation effective area portion of the heating resistor 4, and further below the silicon substrate 2. Since the cavity 8 that does not exist is provided, the cavity 8 functions as a heat insulating layer and suppresses the outflow of heat generated in the heating resistor 4 to the silicon substrate 2 side and the heat storage in the silicon substrate 2. be able to. And since the comparatively thick heat insulation layer 8 of several hundred micrometers is formed, a very high heat insulation effect can be acquired and, as a result, a very high heat generation efficiency can be obtained.

  FIG. 4 shows the evaluation data of the heat generation efficiency. This evaluation is performed by energizing the heating resistor 4 of the thermal head 1, printing on thermal paper, and digitizing the density of the printed data. The larger the value, the higher the density. . It can be seen that the thermal head 1 according to the present embodiment has a very high heat generation efficiency as compared with the thermal head of Patent Document 1 as a comparative example and the thermal head without the cavity 8.

  In particular, according to the thermal head 1 according to the present embodiment, only the protective film 6 and the undercoat 3 that overlap the heat generating resistor 4 are present in the heat generation effective area corresponding to the cavity 8, and thus the entire heat generating resistor 4. The heat capacity of can be made extremely small. Therefore, not only the amount of heat generated in the heat generating resistor 4 flows into the silicon substrate 2 side but also the accumulation on the silicon substrate 2 is small, so that the thermal head 1 having excellent responsiveness and capable of high-speed printing can be realized. As a result, it is possible to obtain heat generation efficiency more than twice that of a conventional thermal head that has an underglaze layer and does not have a cavity 8.

  The cavity 8 is formed in only two steps, that is, the step of forming the etching mask 7 in FIG. 2B and the step of etching the silicon substrate 2 in FIG. Therefore, it is possible to obtain the thermal head 1 with a small number of steps in forming the cavity 8 and excellent productivity.

  Further, by using the silicon substrate 2, a normal thin film manufacturing process such as a photolithography process, dry etching by RIE, or wet etching can be used. Therefore, the cavity 8 can be formed with a processing accuracy of several μm, and the thermal head 1 in which a large number of fine heating resistors 4 are arranged in a straight line can be easily manufactured.

  In general, when a silicon single crystal is used as the silicon substrate 2, it may be broken even by a relatively small force due to the property of cleavage. According to the present embodiment, by providing the cavity 8 for each heating resistor 4, the cross-sectional area of the individual cavity 8 can be reduced. As a result, the strength of the portion that supports the cavity 8 can be increased. Moreover, the aspect ratio of the cavity 8 can be reduced, and the strength of the entire silicon substrate 2 can be improved.

  FIG. 5 schematically shows the relationship between the cross-sectional area of the cavity 8 and the heat generation efficiency, and the relationship between the cross-sectional area of the cavity 8 and the mechanical strength of the silicon substrate 2. When the cross-sectional area of the hollow portion 8 is increased, the path through which heat generated in the heating resistor 4 escapes to the silicon substrate 2 becomes longer, so that the heat insulation performance is improved, and as a result, the heat generation efficiency is improved. Further, when the cross-sectional area is increased, the cross-sectional area of the silicon substrate 2 other than the cavity 8 is reduced, so that the mechanical strength of the thermal head 1 is reduced.

  In other words, the size of the etching window 7a having the cross-sectional shape of the cavity 8 is the same as the effective heating area of the heating resistor 4 in the present embodiment, but is not limited thereto. The material of the heating resistor 4 and the material of the wirings 5a and 5b are conductive, and generally have higher thermal conductivity than the insulating material. Therefore, as shown in FIG. 6, by making the size of the etching window 7a larger than the effective heating area of the heating resistor 4, the heat insulation performance between the heating resistor 4 and the silicon substrate 2 can be improved. .

  On the other hand, as shown in FIGS. 7 to 9, the size of the etching window 7 a can be made smaller than the effective heating area of the heating resistor 4. By doing in this way, although the heat insulation performance of the heating resistor 4 and the silicon substrate 2 is lowered, the mechanical strength of the silicon substrate 2 can be improved instead.

  In particular, as shown in FIG. 9, a plurality of cavities 8 may be provided below each heating resistor 4, and the cavities 8 may be partitioned by partition walls 9. By doing in this way, heat insulation performance can be improved by the cavity part 8, and mechanical strength can be improved by the partition 9 between the cavity parts 8. FIG. In the example shown in FIG. 8, nine cavities 8 are arranged in a square within the effective heating area of the heating resistor 4, and the cavity 8 is provided in the center of the heating resistor 4 that is most overheated. High heat insulation performance can be obtained. However, the present invention is not limited to this structure, and an arbitrary number of two or more cavities 8 may be arranged in an arbitrary arrangement.

  Further, in this embodiment, the cross-sectional shape of the cavity portion 8 is formed in a rectangular shape, but instead of this, as shown in FIG. 8, it may be circular (or oval or elliptical). Good. By doing in this way, it can prevent that the side wall surface of the cavity part 8 and the cleavage surface of the silicon substrate 2 correspond. As a result, it is possible to realize the thermal head 1 that suppresses the breakage of the silicon substrate 2 due to cleavage, and prevents the silicon substrate 2 from being broken during manufacturing, thereby improving the reliability and productivity, and improving the yield. be able to.

  Further, as shown in FIG. 10, it is preferable to shift the arrangement direction of the thermal head 1 on the silicon substrate 2 from the direction parallel to the cleavage plane of the silicon substrate 2 (the cleavage direction). By doing in this way, the thermal head 1 which suppressed the fracture | rupture of the silicon substrate 2 by cleavage can be manufactured.

  FIG. 10 shows a thermal head 1 arranged on a single crystal silicon substrate 2 (silicon (100) substrate) having a (100) plane as the most common silicon substrate 2. Since the two cleavage directions (cleavage directions 1 and 2) are orthogonal to each other, the silicon (100) substrate 2 is shifted from the cleavage direction by laying out the arrangement direction of the thermal head 1 as shown in FIG. The thermal head 1 can be realized. That is, by setting the angle θ formed by the first cleavage direction and the arrangement direction of the thermal head 1 to 0 ° <θ <90 ° or 90 ° <θ <180 °, the thermal head 1 having a structure that is difficult to break can be realized. .

In addition, as an etching method of the silicon substrate 2, by using Deep-RIE that introduces gas of SF 6 and C 4 F 8 alternately and repeats etching and side wall protection to obtain a large aspect ratio, the depth is several hundreds. A cavity 8 having a thickness of μm and perpendicular to the surface of the silicon substrate 2 can be formed with high accuracy. Further, when the silicon substrate 2 is etched by deep-RIE, there is an advantage that the arrangement direction of the thermal head 1 can be freely selected without depending on the crystal direction of the silicon substrate 2.

  As a method for etching the silicon substrate 2, a single crystal silicon substrate 2 (silicon (110) substrate) having a (110) plane as a surface is used for the silicon substrate 2, and wet etching is performed with an alkaline solution such as KOH or TMAH. As a result, the cavity 8 perpendicular to the surface of the silicon substrate 2 can be formed with high accuracy. When anisotropic etching with an alkaline solution is performed on the silicon (110) substrate 2, the etching proceeds in a direction perpendicular to the (110) plane of the silicon (110) substrate 2. Since wet etching is suitable for batch processing, the productivity of the thermal head 1 can be improved by adopting such a manufacturing method.

  FIG. 11 shows an example of a thermal head 1 formed by anisotropic wet etching 2 using a silicon (110) substrate. Since the side wall surface of the cavity 8 needs to be arranged in parallel with the first cleavage direction or the second cleavage direction, the shape of the etching window 7a of the etching mask 7 is a parallelogram. FIG. 12 shows a layout of a silicon wafer in which the thermal head 1 is arranged on the silicon (110) substrate 2. The thermal head 1 in the figure is arranged so that each side of the parallelogram-shaped etching window 7 a is parallel to the first cleavage direction or the second cleavage direction of the silicon (110) substrate 2.

Next, a thermal head 10 according to a second embodiment of the present invention will be described below with reference to FIGS. 13 and 14.
In the description of the present embodiment, the same reference numerals are given to portions having the same configuration as the thermal head 1 according to the first embodiment described above, and the description thereof is omitted.

The thermal head 10 according to the present embodiment is different from the thermal head 1 according to the first embodiment in that a glass substrate 12 is attached to the back side of the silicon substrate 2.
The glass substrate 12 is bonded by direct bonding, glass frit bonding, or the like in addition to anodic bonding bonded by covalent bonding by applying a voltage of several hundred volts while heating the silicon substrate 2 and the glass substrate 12. By bonding the glass substrate 12, the mechanical strength of the entire thermal head 10 can be improved. Bonding a glass substrate 12 without a cleavage plane to a silicon substrate 2 having a cleavage plane corrects warpage and distortion of the silicon substrate 2 due to stress of a thin film material constituting the thermal head 10 such as the protective film 6. Can do.

Further, as shown in FIG. 14 (h), the glass substrate 12 is attached to the back surface of the silicon substrate 2, whereby the opening of the cavity 8 provided in the silicon substrate 2 is sealed with the glass substrate 12. Can do.
In the present embodiment, for example, the inside of the sealed cavity 8 can be evacuated by attaching the glass substrate 12 to the back surface of the silicon substrate 2 in a vacuum state.

  By doing in this way, the heat conduction by the air in the cavity part 8 can be eliminated, and the heat insulation effect can be further improved. Further, it is possible to avoid the pressure in the sealed cavity 8 from fluctuating according to the temperature change caused by the operation of the heating resistor 4.

  On the other hand, you may decide to enclose the gas of the pressure state higher than atmospheric pressure in the cavity part 8. FIG. In this way, when an external force is applied to the heat generating surface of the heat generating resistor 4 composed of a thin film, the internal pressure of the cavity 8 resists this external force and prevents the heat generating surface from being deformed, or The effect of restoring the original state after deformation can be obtained.

In this case, it is preferable to use an inert gas such as N 2 , He, or Ar as the gas sealed in the cavity 8. By doing in this way, it can prevent that the heat generating resistor 4 will be oxidized by the sealing gas which permeate | transmits the undercoat 3. FIG. Moreover, in the case of anodic bonding of the silicon substrate 2 and the glass substrate 12, it is heated at a high temperature of 200 to 400 ° C. during bonding. Therefore, by enclosing the inert gas, it is possible to prevent the problem that the heating resistor 4 is oxidized or deteriorated due to overheating during anodic bonding, and the thermal head 10 having high reliability and reproducibility is configured. Can do.

  Moreover, you may decide to provide the communicating hole 13 as shown in FIG. 15 or FIG. 16 so that the several cavity part 8 formed separately for every heating resistor 4 may mutually communicate. By doing in this way, even if a temperature state differs for every heating resistor 4, there exists an advantage that the pressure state in the cavity part 8 with respect to all the heating resistors 4 can be made constant. As shown in FIG. 15, the communication hole 13 is formed with grooves extending over the plurality of cavities 8 in the silicon substrate 2 on the bonding surface with the glass substrate 12, or as shown in FIG. After forming the groove | channel in the glass substrate 12 in the bonding surface with 2, it can form simply by bonding both. The groove can be easily formed by dry etching by RIE, wet etching, cutting by a dicer, or the like.

  In the above description, the case where the cavity 8 is sealed with the glass substrate 12 has been described. Alternatively, as shown in FIGS. 17 and 18, the cavity 8 may be opened to the atmosphere. . By doing in this way, the internal pressure in the cavity 8 provided in each heating resistor 4 can be kept at a uniform atmospheric pressure. Since the pressure in the cavity 8 affects the heat conduction, the heating characteristics of the heating resistors 4 can be made uniform by opening the cavity 8 to the atmosphere.

  As a method for opening the cavity 8 to the atmosphere, as shown in FIGS. 17 and 18, a groove extending over the plurality of cavities 8 is formed on the bonding surface of the silicon substrate 2 or the glass substrate 12, and one end of the groove is formed. It may be possible to extend the opening so as to open to the outside. Further, as shown in FIG. 19, a through hole 14 penetrating in the thickness direction may be provided in the glass substrate 12 at a position corresponding to the cavity 8 on the bonding side with the silicon substrate 2 in advance. Even if it does in this way, even if the inside of each cavity part 8 will be in the same pressure state, even if the heating resistor 4 overheats, the non-uniform | heterogenous heat generation characteristic by the pressure difference in the cavity part 8 can be prevented.

  Further, in the above embodiment, the thermal heads 1 and 10 in which the undercoat 3 as an etching stopper remains under the heating resistor 4 are illustrated, but instead, as shown in FIG. Even with the thermal head 1 that does not have the undercoat 3 between the heating resistor 4 and the heating resistor 4, the same effects as described above can be obtained. When the undercoat 3 is provided, it is preferable because the undercoat 3 itself can function as a strength member.

Next, a thermal printer 20 according to an embodiment of the present invention will be described below with reference to FIG.
The thermal printer 20 according to the present embodiment includes a platen roller 22 that is horizontally disposed on a main body frame 21 and a thermal head according to the first or second embodiment that is pressed against the platen roller 22 with a thermal paper 23 interposed therebetween. 1 and 10. The thermal heads 1, 10 have a plurality of heating resistors 4 arranged in the longitudinal direction of the platen roller 22, and are pressed against the thermal paper 23 with a predetermined pressing force by the pressing mechanism 24. In the figure, reference numeral 25 denotes a paper feed drive motor.

  According to the thermal printer 20 according to the present embodiment, the thermal heads 1 and 10 have high heat generation efficiency, and can be printed on the thermal paper 23 with less power. Therefore, it is possible to extend the duration of the battery.

  In each of the above-described embodiments, the thermal heads 1 and 10 and the thermal printer 20 that directly performs thermal coloring have been described. However, the present invention is not limited to this, and the heating resistor element components other than the thermal heads 1 and 10 are described. It can also be applied to printer apparatuses other than the thermal printer 20.

  For example, the heating resistor element component can be applied to uses such as a thermal type or valve type inkjet head that ejects ink by heat. Also, other film-like heating resistors such as a thermal erasing head having the same structure as the thermal heads 1 and 10, a fixing heater for a printer that requires thermal fixing, a thin-film heating resistor element of an optical waveguide type optical component, etc. The same effect can be obtained even with an electronic component having an element component.

  In addition, as a printer, it can be applied to a thermal transfer printer using a sublimation type or melt type transfer ribbon, a rewritable thermal printer capable of coloring and proofing a printing medium, a heat-sensitive active adhesive label printer which exhibits adhesiveness by heating, and the like. .

It is a figure which shows the thermal head which is a heating resistive element component based on the 1st Embodiment of this invention, (a) is a top view, (b) is II 'longitudinal cross-sectional view. It is process drawing explaining the manufacturing method of the thermal head of FIG. It is a bottom view which shows the etching window of the thermal head of FIG. It is a graph which shows the heat generation efficiency evaluation data of the thermal head of FIG. 1 with a comparative example. 2 is a graph showing the relationship between the cross-sectional area of the cavity of the thermal head of FIG. 1 and the heat generation efficiency, and the relationship between the cross-sectional area of the cavity and the mechanical strength of the silicon substrate. It is a modification of the thermal head of FIG. 1, Comprising: It is a figure which shows the case where a cavity part is made larger than the heat generation effective area of a heating resistor, (a) is a top view, (b) is II-II 'longitudinal cross-sectional view It is. FIG. 3 is a modification of the thermal head of FIG. 1, showing a case where the cavity is made smaller than the effective heating area of the heating resistor, where (a) is a plan view and (b) is a III-III ′ longitudinal sectional view. It is. FIG. 8 is a view similar to FIG. 7, showing a case where the cavity has a circular cross-sectional shape, where (a) is a plan view and (b) is a IV-IV ′ vertical cross-sectional view. FIG. 8 is a view similar to FIG. 7 and shows a case where a plurality of hollow portions are provided for each heating resistor, where (a) is a plan view and (b) is a VV ′ longitudinal sectional view. It is a figure which shows the layout example of the thermal head on the silicon wafer in the case of forming the cavity part of the thermal head of FIG. 1 by dry etching. It is a figure which shows the modification of the thermal head of FIG. 1 in the case of forming a cavity part by wet etching, (a) is a top view, (b) is a VI-VI 'longitudinal cross-sectional view. It is a figure which shows the example of a layout on the silicon wafer of the thermal head of FIG. It is a figure which shows the thermal head which concerns on the 2nd Embodiment of this invention, Comprising: (a) is a top view, (b) is a VII-VII 'longitudinal cross-sectional view. It is process drawing explaining the manufacturing method of the thermal head of FIG. FIG. 14 is a modification of the thermal head of FIG. 13, and is a (a) plan view and (b) VIII-VIII ′ longitudinal sectional view showing a thermal head having a communication hole in the silicon substrate that communicates between the cavity portions. FIG. 14 is a modification of the thermal head of FIG. 13, and is a (a) plan view and (b) IX-IX ′ longitudinal sectional view showing a thermal head having a communication hole in the glass substrate that communicates between the cavity portions. FIG. 16A is a modification of the thermal head similar to that in FIG. 15, and is a (a) plan view and (b) XX ′ vertical cross-sectional view showing a thermal head having a hollow portion opened to the atmosphere. FIG. 17A is a modification of the thermal head similar to FIG. 16, and is a (a) plan view and (b) XI-XI ′ longitudinal cross-sectional view showing a thermal head having a hollow portion opened to the atmosphere. FIG. 14 is a longitudinal sectional view showing a thermal head in which each cavity is individually opened to the atmosphere, which is a modification of the thermal head in FIG. 13. FIG. 5 is a longitudinal sectional view showing a modification of the thermal head of FIG. 1 and showing a thermal head that does not have an undercoat between a cavity and a heating resistor. 1 is a longitudinal sectional view showing a thermal printer according to an embodiment of the present invention.

Explanation of symbols

1 Thermal head (heating resistance element parts)
2 Silicon substrate 3 Undercoat (insulating film)
4 Heating resistor 5a Common wiring (wiring)
5b Individual wiring (wiring)
8 Cavity 12 Glass substrate 13 Communication hole (through hole)
14 Through hole 20 Thermal printer (printer)

Claims (8)

  1. A plurality of heating resistors are arranged on the silicon substrate at intervals, and wiring for supplying power to each heating resistor is connected.
    A heating resistor element component in which a cavity that penetrates the silicon substrate in the thickness direction is individually provided for each heating resistor in a region covered with each heating resistor of the silicon substrate.
  2. The heating resistor element component according to claim 1 , wherein a plurality of the hollow portions are provided for each heating resistor.
  3. Heating resistor element component according to any one of claims 2 to claim 1, insulating coating is provided between the silicon substrate and the heating resistor.
  4. The heating resistor element component according to any one of claims 1 to 3 , wherein a glass substrate is bonded to a surface of the silicon substrate opposite to the heating resistor.
  5. The heating resistance element component according to claim 4 , wherein a gas is sealed in the hollow portion.
  6. The heating resistor element component according to claim 5 , wherein the gas is an inert gas.
  7. The heating resistance element component according to claim 4 , wherein the cavity is decompressed.
  8. Printer including a thermal head comprising a heating resistor element component according to any one of claims 1 to claim 7.
JP2005182471A 2005-06-22 2005-06-22 Heating resistance element parts and printer Active JP4619876B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005182471A JP4619876B2 (en) 2005-06-22 2005-06-22 Heating resistance element parts and printer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005182471A JP4619876B2 (en) 2005-06-22 2005-06-22 Heating resistance element parts and printer

Publications (2)

Publication Number Publication Date
JP2007001087A JP2007001087A (en) 2007-01-11
JP4619876B2 true JP4619876B2 (en) 2011-01-26

Family

ID=37687125

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005182471A Active JP4619876B2 (en) 2005-06-22 2005-06-22 Heating resistance element parts and printer

Country Status (1)

Country Link
JP (1) JP4619876B2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008200913A (en) * 2007-02-17 2008-09-04 Seiko Instruments Inc Thermal head, its manufacturing method, and thermal printer
JP5139696B2 (en) * 2007-02-28 2013-02-06 セイコーインスツル株式会社 Thermal head, manufacturing method thereof, and thermal printer
JP5213545B2 (en) * 2008-06-26 2013-06-19 京セラ株式会社 Recording head, manufacturing method thereof, and recording device having recording head
JP5135585B2 (en) * 2008-07-25 2013-02-06 セイコーインスツル株式会社 Manufacturing method of thermal head
JP5200256B2 (en) * 2008-10-20 2013-06-05 セイコーインスツル株式会社 Manufacturing method of thermal head
JP5366088B2 (en) * 2009-09-16 2013-12-11 セイコーインスツル株式会社 Thermal head and printer

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51135656A (en) * 1975-05-20 1976-11-24 Matsushita Electric Ind Co Ltd Thermal head for printing
JPS61283572A (en) * 1985-06-10 1986-12-13 Oki Electric Ind Co Ltd Heat ray radiating head
JPH02167757A (en) * 1988-05-20 1990-06-28 Matsushita Electric Ind Co Ltd Thermal head, ink sheet and the like therefor, and recording using same
JPH04107155A (en) * 1990-08-28 1992-04-08 Alps Electric Co Ltd Manufacturing of thermal head
JPH06166197A (en) * 1991-05-23 1994-06-14 Fuji Xerox Co Ltd Thermal head and manufacture thereof
JPH07137318A (en) * 1993-06-28 1995-05-30 Kyocera Corp Production of thermal head
JP2002248756A (en) * 2001-02-27 2002-09-03 Ricoh Co Ltd Ink-jet head

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51135656A (en) * 1975-05-20 1976-11-24 Matsushita Electric Ind Co Ltd Thermal head for printing
JPS61283572A (en) * 1985-06-10 1986-12-13 Oki Electric Ind Co Ltd Heat ray radiating head
JPH02167757A (en) * 1988-05-20 1990-06-28 Matsushita Electric Ind Co Ltd Thermal head, ink sheet and the like therefor, and recording using same
JPH04107155A (en) * 1990-08-28 1992-04-08 Alps Electric Co Ltd Manufacturing of thermal head
JPH06166197A (en) * 1991-05-23 1994-06-14 Fuji Xerox Co Ltd Thermal head and manufacture thereof
JPH07137318A (en) * 1993-06-28 1995-05-30 Kyocera Corp Production of thermal head
JP2002248756A (en) * 2001-02-27 2002-09-03 Ricoh Co Ltd Ink-jet head

Also Published As

Publication number Publication date
JP2007001087A (en) 2007-01-11

Similar Documents

Publication Publication Date Title
USRE39474E1 (en) Method of manufacturing an ink jet recording head having reduced stress concentration near the boundaries of the pressure generating chambers
DE4447817C2 (en) Ink jet printing head
DE19516997C2 (en) Ink jet head and method of manufacturing the same
US6938340B2 (en) Method of forming a printhead using a silicon on insulator substrate
EP1413438B1 (en) Monolithic ink-jet printhead with tapered nozzle and method for manufcturing the same
DE3443560C2 (en) Liquid droplet writing head
US4899181A (en) Large monolithic thermal ink jet printhead
EP1308283B1 (en) Printhead having a thin film membrane with a floating section
US5949465A (en) Thermal printhead, substrate for the same and method for making the substrate
JP4683226B2 (en) Method for manufacturing actuator device and method for manufacturing liquid jet head
US6785956B2 (en) Method of fabricating a fluid jet printhead
JP5039940B2 (en) Heating resistance element, thermal head, printer, and method of manufacturing heating resistance element
US20110032311A1 (en) Inkjet print head and method of manufacture therefor
JP4861684B2 (en) Droplet ejector and droplet ejector forming method
EP0698494B1 (en) Method for producing substrate for ink jet recording head, ink jet recording head and ink jet recording apparatus
US5132707A (en) Ink jet printhead
JP2004001431A (en) Liquid ejection head and liquid ejector
US6923528B2 (en) Liquid-jet head and liquid-jet apparatus
US20030081073A1 (en) Fluid ejection device with a composite substrate
DE60028308T2 (en) Fully integrated thermal inkjet printhead with a back etched phosphosilicate glass layer
EP1078753B1 (en) Fully integrated thermal inkjet printhead having thin film layer shelf
JP4638750B2 (en) Piezoelectric actuator for ink jet print head and method for forming the same
US6155674A (en) Structure to effect adhesion between substrate and ink barrier in ink jet printhead
EP1685962A2 (en) Liquid-jet head and liquid-jet apparatus
DE60107917T2 (en) Ink jet recording head and ink jet recording apparatus

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080130

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20091105

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20091112

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100720

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100727

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100917

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20101026

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20101027

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131105

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250