JP2008034419A - Method of removing organic matter on silicon wafer surface - Google Patents
Method of removing organic matter on silicon wafer surface Download PDFInfo
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- JP2008034419A JP2008034419A JP2006202864A JP2006202864A JP2008034419A JP 2008034419 A JP2008034419 A JP 2008034419A JP 2006202864 A JP2006202864 A JP 2006202864A JP 2006202864 A JP2006202864 A JP 2006202864A JP 2008034419 A JP2008034419 A JP 2008034419A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 25
- 239000010703 silicon Substances 0.000 title claims abstract description 25
- 239000005416 organic matter Substances 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims description 21
- 235000012431 wafers Nutrition 0.000 claims abstract description 72
- 238000010438 heat treatment Methods 0.000 claims abstract description 29
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000001301 oxygen Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 238000003475 lamination Methods 0.000 abstract 2
- 239000000126 substance Substances 0.000 description 25
- 239000010410 layer Substances 0.000 description 16
- 230000007547 defect Effects 0.000 description 13
- DCAYPVUWAIABOU-UHFFFAOYSA-N hexadecane Chemical compound CCCCCCCCCCCCCCCC DCAYPVUWAIABOU-UHFFFAOYSA-N 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- MQIUGAXCHLFZKX-UHFFFAOYSA-N Di-n-octyl phthalate Natural products CCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC MQIUGAXCHLFZKX-UHFFFAOYSA-N 0.000 description 5
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 239000011800 void material Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- -1 hydrogen ions Chemical class 0.000 description 3
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 2
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-N o-dicarboxybenzene Natural products OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
Description
本発明は、貼り合わせウェーハの製造に際し、貼り合わせ用ウェーハの表面に付着する有機物を効果的に分解除去する方法に関するものである。 The present invention relates to a method for effectively decomposing and removing organic substances adhering to the surface of a bonding wafer when manufacturing a bonded wafer.
一般的な貼り合わせウェーハの製造方法としては、酸化膜（絶縁膜）が形成された一枚のシリコンウェーハに、もう一枚のシリコンウェーハを貼り合わせ、この貼り合わせたシリコンウェーハを研削・研磨してSOI層を形成する方法（研削研磨法）や、SOI層側となるシリコンウェーハ（活性層用ウェーハ）の表層部に、水素イオン等を打ち込んでイオン注入層を形成したのち、支持基板用のシリコンウェーハを貼り合わせ、ついで熱処理により上記のイオン注入層で剥離することによって、SOI層を形成する方法（スマートカット法）が知られている。 As a general method of manufacturing a bonded wafer, another silicon wafer is bonded to one silicon wafer on which an oxide film (insulating film) is formed, and the bonded silicon wafer is ground and polished. After forming an ion-implanted layer by implanting hydrogen ions or the like into the surface layer part of the silicon wafer (active layer wafer) on the SOI layer side (grind polishing method) A method of forming an SOI layer (smart cut method) by bonding a silicon wafer and then peeling off the above-described ion-implanted layer by heat treatment is known.
特に後者のスマートカット法は、従来の貼り合わせ技術とは異なり、貼り合わせた後に剥離することによって、その剥離した残部をウェーハとして再利用できるという利点がある。この再利用により、貼り合わせウェーハでありながら、そのうちの１枚のウェーハ（活性層用ウェーハ）を複数回使用することが可能となるため、材料コストを大幅に削減することができるだけでなく、スマートカット法により製造したウェーハは、膜厚均一性に優れているという利点もあり、将来性のある製造方法として注目されている。 In particular, the latter smart cut method has an advantage that unlike the conventional bonding technique, the peeled remaining part can be reused as a wafer by peeling after bonding. This reuse makes it possible to use a single wafer (active layer wafer) multiple times even though it is a bonded wafer. Wafers manufactured by the cutting method have the advantage of excellent film thickness uniformity, and are attracting attention as a promising manufacturing method.
ところで、上記、貼り合わせ技術では、貼り合わせ用ウェーハの表面に付着した有機物が、ボイド及びブリスター不良の原因の一つであることが知られている。
図１(a), (b)に、貼り合わせ欠陥であるボイドとブリスターを模式で示すが、これらが発生すると、貼り合わせウェーハとしては致命的な欠陥となる。
図中、番号１は支持基板用ウェーハ、２はBOX層、３はSOI層、４は活性層用ウェーハであり、５がボイド、６がブリスターである。
By the way, in the bonding technique described above, it is known that the organic matter adhering to the surface of the bonding wafer is one of the causes of voids and blister defects.
FIGS. 1A and 1B schematically show voids and blisters that are bonding defects, and if these occur, they become fatal defects as a bonded wafer.
In the figure,
このため、貼り合わせ直前のウェーハ処理として、ウェーハ洗浄やウェーハ表面プラズマ処理が施されている。
しかしながら、シリコンウェーハの貼り合わせ直前洗浄では、ウェーハ表面に洗浄液の薬品雰囲気が残り、やはりボイドおよびブリスター不良の原因となっていた。また、プラズマ処理は減圧状態で行われるため、大気圧に戻す工程においてパーティクルが発生し、これがボイドおよびブリスター不良の原因となっていた。
For this reason, wafer cleaning and wafer surface plasma processing are performed as wafer processing immediately before bonding.
However, in the cleaning immediately before the bonding of the silicon wafer, the chemical atmosphere of the cleaning liquid remains on the wafer surface, which again causes voids and blister defects. Further, since the plasma treatment is performed in a reduced pressure state, particles are generated in the step of returning to atmospheric pressure, which causes voids and blister defects.
本発明は、上記の問題を有利に解決するもので、貼り合わせに先立って、シリコンウェーハの表面に付着した有機物を効果的に除去することにより、ボイドやブリスター等の発生のない高品質の貼り合わせウェーハを得ることができるシリコンウェーハ表面の有機物除去方法を提案することを目的とする。 The present invention advantageously solves the above-mentioned problems. Prior to bonding, high-quality bonding without generation of voids or blisters can be achieved by effectively removing organic substances adhering to the surface of the silicon wafer. An object of the present invention is to propose a method for removing organic substances on the surface of a silicon wafer from which a bonded wafer can be obtained.
さて、発明者らは、上記の目的を達成すべく鋭意検討を重ねた結果、適量の酸素を含有する不活性雰囲気中にて適切な条件で熱処理を施すことによって、有機物を効果的に分解除去することができ、その結果、有機物に起因した欠陥の発生を格段に低減できることの知見を得た。
本発明は、上記の知見に立脚するものである。
As a result of intensive studies to achieve the above object, the inventors have effectively decomposed and removed organic substances by performing heat treatment under appropriate conditions in an inert atmosphere containing an appropriate amount of oxygen. As a result, it was found that the occurrence of defects due to organic substances can be remarkably reduced.
The present invention is based on the above findings.
すなわち、本発明は、活性層用および支持基板用の２枚のシリコンウェーハを、絶縁膜を介して貼り合わせたのち、活性層用のシリコンを研削または層内部で剥離することによって貼り合わせウェーハを製造するに際し、
上記貼り合わせに先立ち、活性層用および支持基板用の２枚のシリコンウェーハそれぞれに対し、酸素を0.5〜５vol％含有する雰囲気中にて300℃以上で１分以上の熱処理を施して上記シリコンウェーハの表面に付着した有機物を分解除去することを特徴とするシリコンウェーハ表面の有機物除去方法である。
That is, in the present invention, after bonding two silicon wafers for the active layer and the support substrate through the insulating film, the silicon for the active layer is ground or peeled inside the layer to bond the bonded wafers. In manufacturing,
Prior to the bonding, each of the two silicon wafers for the active layer and the support substrate is subjected to a heat treatment at 300 ° C. or higher for 1 minute or longer in an atmosphere containing 0.5 to 5 vol% oxygen. The organic substance removal method of the silicon wafer surface characterized by decomposing | disassembling and removing the organic substance adhering to the surface of this.
本発明によれば、貼り合わせウェーハの製造に際し、従来懸念された有機物に起因した欠陥の発生を格段に低減することができ、その結果、欠陥のない貼り合わせウェーハを安定して得ることができる。 According to the present invention, in the production of a bonded wafer, it is possible to significantly reduce the occurrence of defects due to organic matter that has been a concern in the past, and as a result, a bonded wafer having no defects can be stably obtained. .
以下、本発明を具体的に説明する。
図２に従来法に従う、貼り合わせウェーハの製造プロセスを、また図３には本発明に従う有機物除去工程を含む、貼り合わせウェーハの製造プロセスを、それぞれ比較して示す。なお、この製造プロセスは、代表的な貼り合わせウェーハの製造方法であるスマートカット法を例に採ったものである。
The present invention will be specifically described below.
FIG. 2 shows a bonded wafer manufacturing process according to a conventional method, and FIG. 3 shows a bonded wafer manufacturing process including an organic substance removing process according to the present invention. This manufacturing process is an example of a smart cut method, which is a typical method for manufacturing a bonded wafer.
図２に示したとおり、従来は、活性側基板および支持側基板いずれについても、洗浄後に、貼り付けを行っていた。
しかしながら、かような処理では、基板表面に付着した有機物を完全には除去できなかったことは前述したとおりである。
As shown in FIG. 2, conventionally, both the active side substrate and the support side substrate are pasted after cleaning.
However, as described above, the organic substances adhering to the substrate surface could not be completely removed by such treatment.
これに対し、図３に示したように、洗浄後、貼り付け処理に先立って、貼り付け用の２枚のシリコンウェーハそれぞれに適切な条件下で熱処理することにより、基板表面に付着した有機物を効果的に分解除去することができる。
上記したように、基板表面に付着した有機物を効果的に分解除去するには、当該熱処理における処理条件（温度、時間および雰囲気）が重要である。
On the other hand, as shown in FIG. 3, after cleaning, prior to the bonding process, each of the two silicon wafers for bonding is subjected to a heat treatment under appropriate conditions to thereby remove the organic matter adhering to the substrate surface. It can be effectively decomposed and removed.
As described above, the treatment conditions (temperature, time, and atmosphere) in the heat treatment are important for effectively decomposing and removing organic substances adhering to the substrate surface.
まず、処理温度および時間については、300℃以上、１分以上とする必要がある。というのは、処理温度が300℃に満たないと、十分に満足のいく有機物の分解除去効果が得られないからである。この点は、処理時間が１分に満たない場合も同様である。
一方、処理温度があまりに高くなると、水素注入剥離工程を含むスマートカット法においては、注入した水素が凝集して剥離現象が起きるおそれがある。すなわち、貼り合わせ後に剥離ができない状態になる場合があるので、少なくともスマートカット法においては処理温度の上限は450℃程度とすることが望ましい。また、処理時間が10分を超えると、同様に注入した水素の凝集に起因した剥離現象が起きるおそれがあるので、処理時間の上限は10分程度とするのが好適である。
なお、かような処理温度および処理時間については、貼り合わせウェーハの製造を研削研磨法によって行う場合には、上限の制限はない。
First, the treatment temperature and time must be 300 ° C. or higher and 1 minute or longer. This is because if the processing temperature is less than 300 ° C., a sufficiently satisfactory decomposition and removal effect of organic substances cannot be obtained. This is the same when the processing time is less than 1 minute.
On the other hand, when the processing temperature is too high, in the smart cut method including the hydrogen injection and separation step, the injected hydrogen may aggregate to cause a separation phenomenon. That is, since there may be a case where peeling cannot be performed after bonding, it is desirable that the upper limit of the processing temperature be about 450 ° C. at least in the smart cut method. In addition, if the treatment time exceeds 10 minutes, there is a risk that a peeling phenomenon due to the aggregation of the injected hydrogen will occur, so the upper limit of the treatment time is preferably about 10 minutes.
In addition, about such a processing temperature and processing time, when manufacturing a bonded wafer by a grinding-polishing method, there is no upper limit.
また、この熱処理では、処理雰囲気の調整も重要である。
すなわち、シリコンウェーハに熱処理を施す場合には、通常、ArやN2等の不活性雰囲気や還元性雰囲気が用いられるが、かような不活性または還元性雰囲気では有機物を除去する効果が小さい。特にクリーンルームに多く存在するフタル酸エステル系のＤＢＰ（ジブチフタレート）は、還元性雰囲気下では750℃まで昇温しても完全には分解できない。
In this heat treatment, the adjustment of the treatment atmosphere is also important.
That is, when a heat treatment is performed on a silicon wafer, an inert atmosphere such as Ar or N 2 or a reducing atmosphere is usually used, but the effect of removing organic substances is small in such an inert or reducing atmosphere. In particular, phthalate-based DBP (dibutyphthalate), which is often present in clean rooms, cannot be completely decomposed even when the temperature is raised to 750 ° C. in a reducing atmosphere.
しかしながら、かようなＤＢＰであっても、雰囲気中に0.5vol％以上の酸素が含まれていると300℃程度の温度でも分解が促進される。
そこで、本発明では、有機物除去熱処理における雰囲気として、ArやN2等の不活性雰囲気中に酸素を0.5vol％以上含有させるものとした。
しかしながら、雰囲気中の酸素濃度が５vol％を超えると、貼り合わせ用ウェーハの表面、特に表面に酸化膜のないウェーハの表面に酸化膜が数nmも形成され、貼り合わせた場合に酸化膜厚みに不具合が生じるので、雰囲気中の酸素濃度は５vol％以下に制限した。
However, even with such DBP, decomposition is promoted even at a temperature of about 300 ° C. if the atmosphere contains oxygen of 0.5 vol% or more.
Therefore, in the present invention, oxygen is contained in an inert atmosphere such as Ar or N 2 in an amount of 0.5 vol% or more as an atmosphere in the organic matter removal heat treatment.
However, if the oxygen concentration in the atmosphere exceeds 5 vol%, an oxide film of several nanometers is formed on the surface of the wafer for bonding, particularly the surface of the wafer having no oxide film on the surface. Since troubles occur, the oxygen concentration in the atmosphere is limited to 5 vol% or less.
なお、クリーンルーム中に存在する主な有機物としては、次のものが挙げられる。
(1) フタル酸エステル化合物
・ＤＯＰ（ジオクチルフタレート） 原因：フィルター、Ｗｆパック
・無水フタル酸 原因：Ｗｆパック
・ＤＢＰ（ジブチフタレート） 原因：Ｗｆパック
(2) シロキサン化合物 原因：シーリング材（付着後にＤＯＰに置換）
In addition, the following are mentioned as main organic substance which exists in a clean room.
(1) Phthalic acid ester compounds / DOP (dioctyl phthalate) Cause: Filter, Wf pack, phthalic anhydride Cause: Wf pack, DBP (dibutyphthalate) Cause: Wf pack
(2) Siloxane compound Cause: Sealing material (Substituted with DOP after adhesion)
図４に、本発明に従い、１%O2−Ar雰囲気中にて有機物除去熱処理を施した場合における、ウェーハ表面に付着した有機物の熱分解量（放出量）について調べた結果を示す。なお、同図には、比較のため、100%Ar雰囲気中にて熱処理を施した場合の結果も併せて示す。
同図から明らかなように、100%Ar雰囲気では、200℃前後でかなりの熱分解がみられたが、400℃以降にわたっても有機物の放出がだらだらと続き、600℃に至っても有機物を完全に分解できていない。
これに対し、本発明に従い、１%O2−Ar雰囲気中で熱処理した場合には、200℃から300℃にかけて大量の有機物が分解し、約500℃で有機物をほぼ完全に分解することができた。
FIG. 4 shows the results of examining the thermal decomposition amount (release amount) of the organic matter adhering to the wafer surface when the organic matter removing heat treatment is performed in a 1% O 2 —Ar atmosphere according to the present invention. For comparison, the figure also shows the results when heat treatment is performed in a 100% Ar atmosphere.
As is clear from the figure, in a 100% Ar atmosphere, considerable thermal decomposition was observed at around 200 ° C, but the release of organic matter continued gradually after 400 ° C, and even at 600 ° C, the organic matter was completely removed. It cannot be disassembled.
On the other hand, when heat treatment is performed in a 1% O 2 —Ar atmosphere according to the present invention, a large amount of organic matter is decomposed from 200 ° C. to 300 ° C., and the organic matter can be almost completely decomposed at about 500 ° C. It was.
上述したとおり、酸素濃度が0.5〜５vol％の雰囲気中にて300℃以上で１分以上の熱処理を施することにより、シリコンウェーハの表面に付着した有機物を効果的に分解除去することができる。
しかしながら、このままではウェーハ冷却時およびウェーハ搬送時に、分解した有機物が再びシリコンウェーハ表面に付着するおそれがある。
冷却時におけるかような有機物の再付着を防止するためには、不活性雰囲気または熱処理雰囲気のまま、室温まで急冷することが好ましい。
具体的には、Ar雰囲気または酸素を５vol％以下で含むAr雰囲気中にて、100℃／min以上の速度で室温まで冷却し、同じ雰囲気下でウェーハ搬送を行うことが好ましい。
As described above, by performing heat treatment at 300 ° C. or higher for 1 minute or more in an atmosphere having an oxygen concentration of 0.5 to 5 vol%, organic substances attached to the surface of the silicon wafer can be effectively decomposed and removed.
However, in this state, decomposed organic substances may adhere to the silicon wafer surface again during wafer cooling and wafer transfer.
In order to prevent such redeposition of organic matter during cooling, it is preferable to rapidly cool to room temperature in an inert atmosphere or a heat treatment atmosphere.
Specifically, it is preferable to cool the wafer to room temperature at a rate of 100 ° C./min or higher in an Ar atmosphere or an Ar atmosphere containing oxygen at 5 vol% or less, and carry the wafer under the same atmosphere.
ここに、熱処理後のウェーハ表面における有機物付着量の上限を２ng/cm2（ヘキサデカン換算）とし、１ng/cm2（ヘキサデカン換算）以下まで低減することが好ましい。
また、ウェーハ冷却後、貼り合わせるまでの雰囲気中の有機物含有量は２ng/cm2（ヘキサデカン換算）以下に抑制することが好ましい。
Here, it is preferable that the upper limit of the organic substance adhesion amount on the wafer surface after the heat treatment is 2 ng / cm 2 (hexadecane conversion) and is reduced to 1 ng / cm 2 (hexadecane conversion) or less.
Moreover, it is preferable to suppress the organic matter content in the atmosphere until the wafers are bonded after cooling the wafer to 2 ng / cm 2 (in terms of hexadecane) or less.
実施例１
表１に示す種々の有機物を、酸素濃度：１vol％のAr雰囲気中にて300℃で熱処理した時の上記有機物の分解状況について調べた結果を表１に示す。なお、表１には、酸素を含有しない100％Ar雰囲気中にて熱処理した時の有機物の分解状況について調べた結果を併記する。
さらに、表１には、上記の熱処理条件下で30分間熱処理を継続した後のウェーハ表面の有機物付着量について調べた結果も併せて示す。
Example 1
Table 1 shows the results of examining the decomposition state of the organic substances when various organic substances shown in Table 1 were heat-treated at 300 ° C. in an Ar atmosphere having an oxygen concentration of 1 vol%. Table 1 also shows the results of examining the state of decomposition of organic substances when heat-treated in a 100% Ar atmosphere containing no oxygen.
Further, Table 1 also shows the results of examining the amount of organic matter deposited on the wafer surface after the heat treatment was continued for 30 minutes under the above heat treatment conditions.
同表から明らかなように、100％Ar雰囲気中にて熱処理した場合には、ＤＯＰ（ジオクチルフタレート）および無水フタル酸は分解可能であるものの、ＤＢＰ（ジブチフタレート）は分解させることができなかった。なお、このＤＢＰは、100％Ar雰囲気中では700℃でも分解できなかった。
これに対し、本発明に従い、Ar雰囲気中に酸素を１vol％含有させた場合には、300℃の熱処理で、全ての有機物を分解させることができた。
そして、この熱処理条件下で30分間熱処理を継続した場合には、ウェーハ表面の有機物付着量を0.05ng/cm2（ヘキサデカン換算）以下まで低減することができた。
As is clear from the table, DOP (dioctyl phthalate) and phthalic anhydride were decomposable when heat-treated in a 100% Ar atmosphere, but DBP (dibutyphthalate) could not be decomposed. . This DBP could not be decomposed even at 700 ° C. in a 100% Ar atmosphere.
On the other hand, when 1 vol% of oxygen was contained in the Ar atmosphere according to the present invention, all organic substances could be decomposed by heat treatment at 300 ° C.
When the heat treatment was continued for 30 minutes under this heat treatment condition, the organic substance adhesion amount on the wafer surface could be reduced to 0.05 ng / cm 2 (hexadecane conversion) or less.
実施例２
図２に示した製造プロセスになるスマートカット法を用いて貼り合わせウェーハを製造した。その製造工程中、貼り合わせに先立つ熱処理を表２の条件で実施した。
熱処理前後における有機物の付着量について調べた結果を表２に併記する。
また、表２には、上記の熱処理後、貼り合わせを行って製造した貼り合わせウェーハの欠陥（ボイド、ブリスター）発生率について調査した結果も併せて示す。ここに、欠陥発生率は、有機物除去熱処理を行わなかった場合の欠陥発生率を不良率：１として、その相対しで示した。
なお、この実施例では、上記の熱処理後、同じ雰囲気中にて50℃／minの速度で常温まで冷却し、さらに同じ雰囲気下でウェーハ搬送を行った。
Example 2
A bonded wafer was manufactured using the smart cut method which is the manufacturing process shown in FIG. During the manufacturing process, heat treatment prior to bonding was performed under the conditions shown in Table 2.
The results of examining the amount of organic matter deposited before and after the heat treatment are also shown in Table 2.
Table 2 also shows the results of investigation on the defect (void, blister) occurrence rate of bonded wafers manufactured by bonding after the above heat treatment. Here, the defect occurrence rate is shown relative to the defect occurrence rate when the defect removal rate when the organic matter removing heat treatment is not performed is defined as 1.
In this example, after the above heat treatment, the wafer was cooled to room temperature in the same atmosphere at a rate of 50 ° C./min, and the wafer was transferred in the same atmosphere.
同表に示したとおり、本発明に従い、適量の酸素含有雰囲気中にて適切な条件で熱処理を行った場合には、熱処理後の有機物付着量を有利に低減することができ、その結果、貼り合わせウェーハにおけるボイドやブリスターの発生を大幅に低減することができた。 As shown in the table, in accordance with the present invention, when heat treatment is performed in an appropriate amount of oxygen-containing atmosphere under appropriate conditions, the amount of organic matter deposited after the heat treatment can be advantageously reduced. The generation of voids and blisters in the bonded wafers could be greatly reduced.
１ 支持基板用ウェーハ
２ BOX層
３ SOI層
４ 活性層用ウェーハ
５ ボイド
６ ブリスター
1 Wafer for
Claims (1)
上記貼り合わせに先立ち、活性層用および支持基板用の２枚のシリコンウェーハそれぞれに対し、酸素を0.5〜５vol％含有する雰囲気中にて300℃以上で１分以上の熱処理を施して上記シリコンウェーハの表面に付着した有機物を分解除去することを特徴とするシリコンウェーハ表面の有機物除去方法。 Two silicon wafers for the active layer and the support substrate are directly bonded to each other with or without an insulating film, and then the silicon for the active layer is ground or peeled off inside the layer. When manufacturing bonded wafers,
Prior to the bonding, each of the two silicon wafers for the active layer and the support substrate is subjected to a heat treatment at 300 ° C. or higher for 1 minute or longer in an atmosphere containing 0.5 to 5 vol% oxygen. A method for removing organic matter on the surface of a silicon wafer, comprising decomposing and removing organic matter adhering to the surface of the silicon wafer.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02194520A (en) * | 1989-01-23 | 1990-08-01 | Sumitomo Metal Mining Co Ltd | Method and apparatus for bonding of semiconductor substrates |
| JPH11162975A (en) * | 1997-11-28 | 1999-06-18 | Nec Corp | Manufacture of semiconductor device |
| JP2001044292A (en) * | 1999-07-27 | 2001-02-16 | Hitachi Ltd | Semiconductor device and manufacture thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02194520A (en) * | 1989-01-23 | 1990-08-01 | Sumitomo Metal Mining Co Ltd | Method and apparatus for bonding of semiconductor substrates |
| JPH11162975A (en) * | 1997-11-28 | 1999-06-18 | Nec Corp | Manufacture of semiconductor device |
| JP2001044292A (en) * | 1999-07-27 | 2001-02-16 | Hitachi Ltd | Semiconductor device and manufacture thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2013026348A (en) * | 2011-07-19 | 2013-02-04 | Toshiba Corp | Supercritical drying method of semiconductor substrate and device |
| US9583330B2 (en) | 2011-07-19 | 2017-02-28 | Tokyo Electron Limited | Supercritical drying method for semiconductor substrate and supercritical drying apparatus |
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