JP2008016294A5 - - Google Patents

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Publication number
JP2008016294A5
JP2008016294A5 JP2006185946A JP2006185946A JP2008016294A5 JP 2008016294 A5 JP2008016294 A5 JP 2008016294A5 JP 2006185946 A JP2006185946 A JP 2006185946A JP 2006185946 A JP2006185946 A JP 2006185946A JP 2008016294 A5 JP2008016294 A5 JP 2008016294A5
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JP
Japan
Prior art keywords
electrode
light absorption
photocathode
absorption layer
layer
Prior art date
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Application number
JP2006185946A
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Japanese (ja)
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JP2008016294A (en
JP4805043B2 (en
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Publication date
Application filed filed Critical
Priority to JP2006185946A priority Critical patent/JP4805043B2/en
Priority claimed from JP2006185946A external-priority patent/JP4805043B2/en
Priority to US11/819,599 priority patent/US8482197B2/en
Priority to CNA2007101282170A priority patent/CN101101840A/en
Publication of JP2008016294A publication Critical patent/JP2008016294A/en
Publication of JP2008016294A5 publication Critical patent/JP2008016294A5/ja
Priority to US12/712,546 priority patent/US8446094B2/en
Application granted granted Critical
Publication of JP4805043B2 publication Critical patent/JP4805043B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Claims (14)

入射した光を吸収して光電子を発生する光吸収層と、
前記光吸収層の一方の主面側に形成された第１の電極と、
前記光吸収層の他方の主面側に形成され、前記第１の電極とともに前記光吸収層の一方の主面と他方の主面との間に電圧を印加するために使用される第２の電極と、
を備え、
前記第１の電極は、厚さ方向に貫通する貫通孔を有するとともに、表面プラズモン共鳴を発生させるための所定の規則に従ったパターンが表面に形成されており、
前記光吸収層は、前記第１の電極の前記貫通孔から出力された光を吸収して前記光電子を発生するとともに、発生した当該光電子を前記第１の電極の前記貫通孔を介して外部に放出することを特徴とする光電陰極。 A light absorption layer that absorbs incident light and generates photoelectrons;
A first electrode formed on one main surface side of the light absorption layer;
A second main surface formed on the other main surface side of the light absorption layer and used for applying a voltage between one main surface of the light absorption layer and the other main surface together with the first electrode; Electrodes,
With
The first electrode has a through hole penetrating in the thickness direction, and a pattern according to a predetermined rule for generating surface plasmon resonance is formed on the surface,
The light absorption layer absorbs light output from the through hole of the first electrode and generates the photoelectron, and the generated photoelectron is externally transmitted through the through hole of the first electrode. A photocathode characterized by emitting. 支持基板と、
前記光吸収層上に形成され、前記光吸収層にて発生した光電子を加速する電子放出層と、
前記電子放出層上に形成されたコンタクト層と、
を更に備え、
前記光吸収層は、前記支持基板上に形成されており、
前記第１の電極は、前記コンタクト層と電気的に接続されており、
前記第２の電極は、前記支持基板と電気的に接続されていることを特徴とする請求項１に記載の光電陰極。 A support substrate;
An electron emission layer formed on the light absorption layer and accelerating photoelectrons generated in the light absorption layer;
A contact layer formed on the electron emission layer;
Further comprising
The light absorption layer is formed on the support substrate,
The first electrode is electrically connected to the contact layer;
The photocathode according to claim 1, wherein the second electrode is electrically connected to the support substrate. 支持基板と、
前記光吸収層上に形成され、前記光吸収層にて発生した光電子を加速する電子放出層と、
を更に備え、
前記光吸収層は、前記支持基板上に形成されており、
前記第１の電極は、前記電子放出層とショットキ接合されており、
前記第２の電極は、前記支持基板と電気的に接続されていることを特徴とする請求項１に記載の光電陰極。 A support substrate;
An electron emission layer formed on the light absorption layer and accelerating photoelectrons generated in the light absorption layer;
Further comprising
The light absorption layer is formed on the support substrate,
The first electrode is Schottky-bonded to the electron emission layer;
The photocathode according to claim 1, wherein the second electrode is electrically connected to the support substrate. 前記第１の電極は複数の凸部と当該凸部間に位置する凹部とを有しており、前記凸部および前記凹部が前記パターンを形成しており、前記貫通孔は前記凹部に設けられていることを特徴とする請求項１〜３のいずれか一項に記載の光電陰極。   The first electrode has a plurality of convex portions and concave portions located between the convex portions, the convex portions and the concave portions form the pattern, and the through hole is provided in the concave portion. The photocathode according to any one of claims 1 to 3, wherein 前記光吸収層にて発生する光電子の量が、貫通孔を有し且つ表面に凸部および凹部が形成されていない第１の電極を備えた場合に前記光吸収層にて発生する光電子の量と比べて多くなるように、前記パターンにおける前記所定の規則が決められていることを特徴とする請求項４に記載の光電陰極。   The amount of photoelectrons generated in the light absorption layer when the amount of photoelectrons generated in the light absorption layer includes a first electrode having a through-hole and having no protrusions and recesses on the surface. The photocathode according to claim 4, wherein the predetermined rule in the pattern is determined so as to be larger than the photocathode. 前記第１の電極は前記貫通孔を複数有しており、当該複数の貫通孔が前記パターンを形成していることを特徴とする請求項１〜３のいずれか一項に記載の光電陰極。   The photocathode according to any one of claims 1 to 3, wherein the first electrode has a plurality of the through holes, and the plurality of through holes form the pattern. 前記貫通孔の最短幅は前記第１の電極に入射する光の波長よりも短いことを特徴とする請求項１〜６のいずれか一項に記載の光電陰極。 The photocathode according to claim 1, wherein the shortest width of the through hole is shorter than a wavelength of light incident on the first electrode . 前記光吸収層の主面方向から見たときに、前記第１の電極の前記貫通孔の内側には、当該部分の仕事関数を低下させるための活性層が形成されていることを特徴とする請求項１〜７のいずれか一項に記載の光電陰極。   An active layer for reducing the work function of the portion is formed inside the through hole of the first electrode when viewed from the main surface direction of the light absorption layer. The photocathode according to any one of claims 1 to 7. 前記活性層は、アルカリ金属、アルカリ金属の酸化物、またはアルカリ金属のフッ化物からなることを特徴とする請求項８に記載の光電陰極。   The photocathode according to claim 8, wherein the active layer is made of an alkali metal, an alkali metal oxide, or an alkali metal fluoride. 前記第１の電極を複数備えており、
前記複数の第１の電極のうち少なくとも２つにおいては、前記パターンの周期が互いに異なっていることを特徴とする請求項１〜９のいずれか一項に記載の光電陰極。 A plurality of the first electrodes;
The photocathode according to any one of claims 1 to 9, wherein in at least two of the plurality of first electrodes, the periods of the patterns are different from each other. 前記複数の第１の電極は、電圧をそれぞれ個別に印加可能となっていることを特徴とする請求項１０に記載の光電陰極。   The photocathode according to claim 10, wherein the plurality of first electrodes can individually apply a voltage. 請求項１〜９のいずれか一項に記載の光電陰極を複数備え、
前記光電陰極の前記第１および第２の電極は、電圧を前記光電陰極毎に印加可能となっていることを特徴とする光電陰極アレイ。 A plurality of the photocathodes according to any one of claims 1 to 9,
The photocathode array, wherein the first and second electrodes of the photocathode can apply a voltage to each photocathode. 請求項１〜１１のいずれか一項に記載の光電陰極を備えることを特徴とする電子管。   An electron tube comprising the photocathode according to any one of claims 1 to 11. 請求項１２に記載の光電陰極アレイを備えることを特徴とする電子管。
An electron tube comprising the photocathode array according to claim 12.
JP2006185946A 2006-07-05 2006-07-05 Photocathode, photocathode array, and electron tube Expired - Fee Related JP4805043B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006185946A JP4805043B2 (en) 2006-07-05 2006-07-05 Photocathode, photocathode array, and electron tube
US11/819,599 US8482197B2 (en) 2006-07-05 2007-06-28 Photocathode, electron tube, field assist type photocathode, field assist type photocathode array, and field assist type electron tube
CNA2007101282170A CN101101840A (en) 2006-07-05 2007-07-05 Photocathode, electron tube, field assisting type photocathode, field assisting type array, and field assisting type electron tube
US12/712,546 US8446094B2 (en) 2006-07-05 2010-02-25 Photocathode, electron tube, field assist type photocathode, field assist type photocathode array, and field assist type electron tube

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006185946A JP4805043B2 (en) 2006-07-05 2006-07-05 Photocathode, photocathode array, and electron tube

Publications (3)

Publication Number Publication Date
JP2008016294A JP2008016294A (en) 2008-01-24
JP2008016294A5 true JP2008016294A5 (en) 2009-04-02
JP4805043B2 JP4805043B2 (en) 2011-11-02

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CN (1) CN101101840A (en)

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KR20130129886A (en) * 2010-06-08 2013-11-29 퍼시픽 인테그레이티드 에너지, 인크. Optical antennas with enhanced fields and electron emission
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US20130153861A1 (en) * 2011-12-16 2013-06-20 Bozena Kaminska Organic optoelectronic devices with surface plasmon structures and methods of manufacture
CN104658849B (en) * 2013-11-21 2017-02-08 中国科学院大连化学物理研究所 Ionization source for nano array modified enhanced photoelectronic emission based on vacuum ultraviolet light
US9543130B2 (en) * 2014-11-14 2017-01-10 Kla-Tencor Corporation Photomultiplier tube (PMT) having a reflective photocathode array
JP6187436B2 (en) * 2014-11-19 2017-08-30 株式会社豊田中央研究所 Electron emission device and transistor including the same
CN105070629B (en) * 2015-08-19 2017-06-13 长春理工大学 There is the microchannel photomultiplier of composite waveguide anode for space optical communication
CN110223897B (en) * 2019-05-13 2021-07-09 南京理工大学 GaN nanowire array photocathode based on field-assisted index doping structure
CN110767519B (en) * 2019-10-21 2022-03-04 中国电子科技集团公司第十二研究所 Field emission electron source structure and forming method thereof, electron source and microwave tube
EP4135002A1 (en) * 2021-08-10 2023-02-15 Hamamatsu Photonics K.K. Photoelectric conversion device and photoelectric conversion method

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JP2651352B2 (en) * 1993-06-02 1997-09-10 浜松ホトニクス株式会社 Photocathode, phototube and photodetector
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