JP2008007348A - Bonding apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To obtain simplification of an alignment monitoring system and highly uniform bonding without bonding unevenness in a bonding apparatus for substrate samples by anodic bonding or pressure bonding. <P>SOLUTION: A gate valve is provided in the upper opening of an alignment chamber. A "peephole" is provided at the top of the gate valve and a bonding head is held in a bonding chamber, thereby capable of simplifying the constitution of the monitoring system. A "temporal tacking mechanism" is provided in part of the alignment mechanism to suppress the displacement of two substrate samples. In addition, a plasma cleaning mechanism is provided in the alignment chamber to allow consistent treatment of the steps of plasma cleaning, alignment, and bonding in vacuum or a desired gas atmosphere. Further, a contact electrode at the time of anode bonding is divided into plural numbers, thereby allowing independent control of the timing of high voltage application for every divided bonding region to improve uniformity of bonding. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a joining apparatus for joining two plate-like substrate samples.

  An anodic bonding method is frequently used as one method for bonding a silicon (Si) substrate and a glass substrate. This method can be bonded without using an adhesive, and if the material of the glass substrate is appropriately selected, it is possible to match the thermal expansion coefficient with the silicon substrate. It has the advantage of being able to eliminate obstacles.

In the above bonding method, it is required that the interface of the substrates to be bonded, that is, the surface where both of them meet each other is flat and clean. In particular, regarding the cleaning method, the “dry cleaning method” that can avoid the problem of residual impurities in the cleaning liquid is effective. In particular, a plasma cleaning method using an inert gas (for example, Ar) is one of the most effective methods as a pretreatment cleaning method for a substrate because it can prevent oxidation of the substrate during or immediately after the processing. Furthermore, it is most desirable that anodic bonding can be continuously performed in a vacuum without taking the substrate into the atmosphere after the plasma cleaning process.
JP-A-5-326649

In order to realize an integrated process from the above plasma cleaning to anodic bonding, the following operation has been performed.
(1) A silicon substrate and a glass substrate, which are separated during plasma cleaning, are placed in close contact with each other after the plasma cleaning is completed. Moreover, after performing the relative position alignment (alignment) with a silicon substrate and a glass substrate as needed, both are arrange | positioned closely.
(2) A pair of substrates arranged in close contact is moved from the plasma cleaning mechanism to the anodic bonding mechanism, or anodic bonding is performed after the plasma cleaning mechanism is moved and exchanged with the anodic bonding mechanism.

However, the above-described integrated processing has the following problems.
(1) A “temporary fixing mechanism” is required to maintain a state in which the silicon substrate and the glass substrate after the plasma cleaning process are closely arranged in a vacuum. This is an indispensable mechanism when alignment is required, but the structure is complicated, and a simple and effective new mechanism has been desired.

(2) For the above alignment operation, an image sensor (for example, a CCD image sensor) has to be installed in a vacuum with many restrictions on installation conditions.
(3) Further, normally, the silicon substrate and the glass substrate are faced to each other with a sufficient distance to allow the image sensor to be inserted and moved, and the double-sided image sensor is inserted between the two substrates. An alignment method is often adopted in which the upper pattern is recognized and the relative position between the two is adjusted by a fine movement mechanism. In this case, even when a small double-sided image sensor is used, the distance between both substrates during alignment is often several tens of mm. The last step of alignment, that is, a substrate with a stroke of several tens mm for bringing both substrates into close contact with each other. There was a problem that positional displacement was likely to occur during the movement process.

  The first aspect of the present invention for solving the problem is an “alignment chamber” that houses a fine movement mechanism, a temporary fixing mechanism, and the like for alignment, and a “joining chamber” that houses an electrode mechanism for anodic bonding or a pressure mechanism for bonding. Are separated from each other by a gate valve, and at the time of alignment, the bonding chamber is detached from the gate valve so as to be movable and retractable.

  FIG. 1 is a schematic diagram showing the main concept of the present invention. As shown in FIG. 1A, a bonding chamber 2 is provided in the upper part (ceiling part) of the alignment chamber 1, and both chambers are connected by a gate valve 3. Further, as shown in FIG. 1B, the bonding chamber 2 can move in the lateral direction or upward together with the alignment monitoring system 10.

  The plasma cleaning process and the alignment operation with the above configuration will be described below. In the state of FIG. 1B, the alignment chamber is evacuated, and then an inert gas (for example, Ar) is introduced into the chamber. Furthermore, plasma is generated by exciting the inert gas in the chamber by microwaves from the microwave power source 20 provided on the side wall of the alignment chamber. The two substrate samples 5 placed on the sample table 7 are supported with a gap between the substrate samples, and the surfaces to be joined are exposed to the plasma, so that the plasma cleaning is performed.

After the plasma cleaning is completed, the monitor system 10 (for example, an optical microscope unit having an epi-illumination mechanism) is moved onto the gate valve 3. The gate valve 3 is provided with a “view window” 4 through which the state of the two substrate samples 5 set in the alignment chamber can be observed. Adjust the relative positional relationship between the two substrate samples while monitoring them with the monitor system by finely moving the substrate sample placed on the sample stage 7 in the XY-θ (rotation) direction. ). In the above alignment method, since the entire monitor system can be installed outside the vacuum chamber, it is not necessary to introduce image sensors into the vacuum chamber. Therefore, the alignment operation can be performed after the two substrate samples are sufficiently brought close to each other. Furthermore, even in the contact operation in the final alignment process, the movement stroke until the contact can be greatly shortened, so that the positional deviation between the two substrate samples, which is likely to occur during the movement, is improved.

Next, the joining operation after alignment will be described. After the monitor system 10 is retracted from the state shown in FIG. 1B by a moving mechanism (not shown), the joining chamber 2 is moved onto the gate valve 3 by the moving mechanism (not shown), and FIG. ). Next, as shown in FIG. 1C, after the gate valve 3 is opened, the upper head 9 is driven to contact the upper substrate sample surface, and an appropriate preselected bonding method (anodic bonding, pressurization). Two substrate samples are joined by a method such as thermocompression bonding or solder welding.

According to the method of the present invention described above, since the plasma cleaning process, the alignment operation, and the bonding process can be continuously performed in a vacuum or in a desired gas atmosphere, the bonding quality is improved.

  When the present invention is applied to an anodic bonding apparatus, the high voltage application electrode for anodic bonding (portion corresponding to the upper head 9) may be divided into two or more. In this case, with respect to the divided individual structures, temperature, load, pressurization operation start / end time, applied voltage, voltage application start / end time, and the like are independently controlled. This improves the in-plane uniformity of anodic bonding. In addition, the idea of dividing the pressing portion of the bonding mechanism into a plurality of structures as described above is not limited to the single electrode mechanism for anodic bonding, but can be applied to a sample table or another bonding method (such as a thermocompression bonding method). Is also applicable.

  Furthermore, in all the configurations described above, a heater is incorporated in either or both of the upper head or the high voltage application electrode for anodic bonding and the sample stage, and the temperature is controlled from the outside of the chamber. You can also.

  The monitor system is mainly composed of an optical microscope, but it is preferable that an image can be displayed on various displays using an optical sensor (CCD sensor or the like). It is also possible to automate the alignment operation by adding an image recognition function. Furthermore, the optical microscope unit may be constituted by an infrared microscope instead of a visible light microscope, which is effective for alignment with an opaque substrate sample.

  The second of the present invention is an alignment mechanism for performing relative alignment of two substrate samples. A schematic structure of this alignment mechanism is shown in FIG. Among the substrate samples 5, a sample stage 7 on which a substrate sample located on the lower side is placed, a fine movement mechanism 6 connected to this, and a peripheral support (not shown) that holds the substrate sample located on the upper side at the peripheral part. ) And a temporary fixing jig 8 for holding the two substrate samples after alignment and holding the state as it is.

  The above alignment mechanism may be entirely housed in the alignment chamber, or the fine movement mechanism may be disposed outside the chamber. In addition, it is preferable that a heater is provided inside the sample stage 7 and the temperature is controlled from outside the chamber.

  The operation of the alignment mechanism according to the present invention will be described below. The lower substrate sample is placed on the sample stage, and the upper substrate sample is set on the peripheral support. Next, the sample stage is raised in the Z (height) direction by the fine movement mechanism, and is brought close to a distance where pattern observation for alignment is possible. Next, the alignment state is confirmed from the upper surface of the upper substrate sample by the alignment monitor system. For example, if the upper substrate sample is a borosilicate glass plate and the lower substrate sample is a silicon substrate, the patterns of the upper and lower substrate samples can be observed through the upper substrate sample. The upper and lower substrate samples are aligned while finely moving the sample stage in the X-Y-θ direction.

  Next, after the lower substrate sample is pushed upward by the fine movement mechanism and brought into close contact with the upper substrate sample, the upper and lower substrate samples are further pushed upward to bring the upper surface end of the upper substrate sample into contact with the temporary fixing jig. Then, it is pushed upward further to fix the positional relationship between the two aligned substrate samples. At this time, the temporary fixing jig has a function of fixing the positional relationship between the two aligned substrate samples by a load due to its own weight or a load applied by a spring.

According to the present invention, after evacuating the vacuum vessel, plasma cleaning of the substrate surface, alignment and bonding of the two substrates to be bonded can be performed without breaking the vacuum, and the bonding surface is kept clean. It is possible to join them as they are.

  In addition, it is possible to perform bonding without causing a positional deviation between the two substrate samples between the adhesion operation at the final stage of alignment and the execution of the bonding operation.

Furthermore, there are no bubbles or uneven bonding on the bonding surface, the bonding strength is increased, and the bonding quality is improved.

Various embodiments of the bonding apparatus according to the present invention and embodiments of an alignment mechanism for aligning two substrate samples to be bonded will be described below.

2 and 3 are schematic views showing an embodiment of a bonding apparatus according to the present invention and showing a bonding apparatus using an anodic bonding method. It comprises an alignment chamber 101 that houses a temporary fixing mechanism 108 for alignment, a sample stage 107, and the like, a gate valve 103 disposed at the top of the alignment chamber, and a bonding chamber 102 that houses an electrode mechanism 140 for anodic bonding. The fine adjustment mechanism 106 for alignment is installed outside the alignment chamber.

An exhaust pump (not shown) is attached to the end of the exhaust line 114 so that the inside of the alignment chamber 101 made of stainless steel can be exhausted. A gate valve 103 with a “view window” 104 is connected to the upper opening of the alignment chamber, and the alignment chamber is a closed vacuum vessel. Inside the alignment chamber, a sample stage 107 in which a heater 111 is incorporated is connected to a fine movement mechanism 106 so that it can be finely moved in the X, Y, Z axis and θ (angle) directions. A Si wafer, which is the lower substrate sample 115, is placed on the sample stage with the bonding surface facing upward, and a glass substrate, which is the upper substrate sample 105, is placed on the upper portion of the Si wafer with a space therebetween. To do. The glass substrate is placed on the peripheral support 112. A microwave oscillator 120 is installed on the side wall of the alignment chamber via a waveguide.

On the other hand, Ar gas introduced from the gas introduction line 129 is caused to flow into the chamber, the Ar gas is excited by microwaves from a microwave oscillator to generate plasma, and the bonding surfaces of the upper and lower substrate samples are plasma cleaned. In plasma cleaning, it is preferable that a surface interval between the upper substrate sample and the lower substrate sample to be bonded is 10 mm or more. If the surface spacing is narrower than this, it will be difficult for the plasma to sufficiently reach the bonding surface.

The gate valve has a “view window” 104, and a reference point on the substrate sample through the view window in the optical microscope 113 at the top of the view window in order to align the two substrate samples in the chamber. (Align guide mark) is visible. The monitor system 110 including the optical microscope 113 and the like can be moved and retracted by a moving mechanism (not shown).

Next, details of the alignment operation will be described below. After the plasma cleaning is completed, the sample stage is moved in the Z direction by the fine movement mechanism, and the surface interval between the two substrate samples is adjusted to be slightly before the two come into contact with each other. In order to align the reference point (alignment guide mark) of the lower Si wafer with the corresponding position of the upper glass substrate, the optical microscope 113 is used to observe the reference point on the Si wafer through the glass substrate while holding the sample stage. Adjust the position by slightly moving in the X, Y, and θ directions.

After the alignment is completed, the lower substrate sample is raised in the Z direction so that the two samples are brought into close contact with each other, and further pushed upward. As described above, the lower substrate sample is detached from the peripheral support, and further pushed upward to bring the peripheral portion of the upper substrate sample into contact with the clamp claw 118, and then further pushed up, after the alignment is completed by the weight of the clamp claw and the spring 131. The two substrate samples are temporarily fixed. As described above, the temporary fixing mechanism 108 includes the clamp pawl 118, the spring 131, and the clamp guide 128. The clamp claw 118 is connected to the spring 131. When the clamp claw 118 moves upward from the fixed position, the spring works and clamps the two substrate samples. In order to securely clamp the substrate sample, the clamp pawl is guided by the clamp guide 128 so as not to be laterally shaken so that it can be moved only in the vertical direction.

  FIG. 3 is a schematic structural diagram of the anodic bonding apparatus showing a state at the time of bonding. After the alignment is completed, the monitor system 110 on the “view window” is moved / retracted from the alignment chamber 101, and then the bonding chamber 102 is moved / connected to the gate valve 103 by the chamber moving mechanism 127. After the alignment chamber and the bonding chamber are exhausted from the exhaust line 114 by an exhaust pump (not shown), the gate valve 103 is opened. Next, the electrode mechanism 140 for anodic bonding is lowered by the electrode driving mechanism 150, and the tip electrode 141 at the tip is brought into contact with the upper substrate sample. The electrode mechanism 140 for anodic bonding includes a heater 111 in the vicinity of the tip electrode. The temperature of the heater is controlled from the outside of the chamber, so that the upper substrate sample can be heated as necessary. The contact surfaces of the two substrate samples are clamped in contact with each other while maintaining a clean state after the plasma cleaning, and no positional deviation occurs. In this state, the output voltage from the high voltage power supply 143 is applied to the tip electrode through the feeder line 142 to perform anodic bonding.

An embodiment in which the present invention is applied to a pressure bonding apparatus (such as a solder welding apparatus) will be described below.
FIG. 4 is a schematic configuration diagram of a pressure bonding apparatus according to the present invention. The basic configuration is the same as that of the first embodiment in that the alignment chamber and the bonding chamber are coupled via a gate valve, and the alignment chamber moves and retracts during alignment. Further, since the alignment method is the same as that shown in the first embodiment, the detailed description of the above configuration is omitted.

  The bonding chamber 202 is equipped with a pressure head 209 for pressure bonding the two substrate samples (205, 215). On the other hand, the two substrate samples are set in the alignment chamber, and after plasma cleaning and alignment are performed as necessary, they are closely attached and temporarily fixed. Next, after the alignment chamber and the bonding chamber are coupled as shown in the figure, the pressure head 209 is lowered by the pressure driving mechanism 250 provided outside the bonding chamber so that the two substrate samples are brought from the upper surface at a desired pressure. Press uniformly to join. The pressure head 209 incorporates a heater 211 whose temperature is controlled from the outside of the chamber, and the substrate sample can be heated from above as necessary.

  According to the configuration of the present embodiment, the pressure and temperature conditions are appropriately selected, and two sheets in a vacuum atmosphere or a desired gas atmosphere can be obtained by a thermocompression bonding method, a solder welding bonding method, a bonding method using an adhesive, or the like. It is possible to bond substrate samples.

  An embodiment of the present invention relating to an anodic bonding electrode mechanism will be described below with reference to FIG. FIG. 5A shows a schematic cross section of an anodic bonding electrode mechanism 300 and a connection state for supplying a DC high voltage to the anodic bonding electrode mechanism. The electrode mechanism for anodic bonding is lowered to bring the tip electrodes (310A to 310D) into contact with the upper surface of the upper substrate sample 380 (for example, a borosilicate glass substrate). As for the tip portion in contact with the upper substrate sample, a cylindrical tip electrode A (310A) is arranged at the center portion, and ring-like tip electrodes B to D (310B to D) are arranged concentrically around the peripheral portion. It is installed. FIG. 5B is a schematic bottom view of the electrode mechanism for anodic bonding as viewed from the SS position in FIG. 5A, and shows the tip electrodes 310A to 310D arranged concentrically. The tip electrodes A to D are electrically separated and fixed by an insulator 320. In addition, a heater 325 is built in the insulator, and the upper substrate sample can be heated.

When the support guide 355 is further lowered, the integrated member composed of the insulator with built-in heater and the tip electrode is detached from the hook 357, so that the tip electrode has two substrate samples in the state where the weight of the integrated member is added. Will be placed on top. When the support guide is further lowered, the connection conductor A (330A) first comes into contact with the tip electrode A (310A) located in the center, so that the output voltage of the DC high voltage power supply 350 for anodic bonding is supplied through the feeder line 340. Applied to the center of the upper substrate sample. Thereby, anodic bonding starts at the center of the substrate sample.

Around the connection conductor A (330A), ring-shaped connection conductors B to D (330B to D) are disposed, and these are suspended and held at the peripheral portion by the connection conductors on the outside. The outermost connection conductor D (330D) is lifted and held by a hook 356 provided on the inner side of the support guide.

When the support guide is further lowered, the connection conductor B (330B) comes into contact with the tip electrode B (310B), and a high voltage is applied in a ring shape immediately below the tip electrode B, and anodic bonding proceeds at this portion. . Next, the connection conductor C (330C) located outside the connection conductor B is in contact with the tip electrode C (310C), and further, the connection conductor D (330D) is in contact with the tip electrode D (310D). One after another, it is applied to the upper substrate sample surface concentrically toward the outside, and anodic bonding proceeds.

Usually, when a high voltage is applied to the central part of a substrate sample, the anodic bonding that started at the central part often spreads sequentially to the peripheral part, but on the other hand, due to slight irregularities at the interface between the two substrate samples It is not uncommon for uneven bonding to occur. According to the present embodiment, the high voltage application portion is concentrically spread from the sample central portion to the peripheral portion, so that uniform bonding can be achieved over the entire surface of the sample. The schedule of the high voltage application time applied to the tip electrodes A to D can be adjusted by adjusting the descending speed of the shaft 350 and the start / stop timing.

Another embodiment of the present invention relating to the electrode mechanism for anodic bonding will be described below with reference to FIG. FIG. 6 shows a schematic cross section of an anodic bonding electrode mechanism 400 and a connection state for supplying a DC high voltage to the anodic bonding electrode mechanism. There are tip electrodes A to D (410A to 410D) held by a support guide 455, an insulator 420, and a heater 425 at the tip of a shaft 450 that is driven up and down. Since these are the same configurations as those of the third embodiment, detailed description thereof is omitted. The tip electrodes A to D are connected to a high voltage power source 460 through a feeder line 440 as shown in the figure. The high voltage power supply has output terminals for a plurality of channels (four channels in this example), and each output voltage can be turned on / off independently for each channel by a high voltage switch 465.

An example of an actual joining procedure will be described below. First, the shaft 450 is lowered, and the tip electrodes A to D are brought into contact with the upper surface of the upper substrate sample 480 with a desired pressing force. Next, the high voltage switch of the feeding line of the tip electrode A (410A) located at the center is turned ON, and a high voltage is applied only to the central portion of the upper substrate sample to start anodic bonding. After applying the voltage for a desired time, a high voltage is applied to the tip electrode B located outside the tip electrode A to expand the anodic bonding to the peripheral portion. Similarly, a high voltage is sequentially applied to the outer zone, and anodic bonding is performed over the entire surface. If a high-voltage power supply whose ON / OFF timing of the high-voltage switch 465 can be set in advance by a program is used, the above-described series of operations can be automatically performed. In addition, when applying a high voltage to the tip electrode, it is also possible to start feeding the next tip electrode after turning off the tip electrode feeding that has been fed until then, or It is also possible to start power feeding to the next tip electrode while continuing power feeding. Since such a procedure can be freely set by a program set in advance, it may be selected according to the state of the target substrate sample.

  In Examples 3 and 4 described above, the example in which the high voltage application zone is divided into four is described. Further, the shape of the divided zone is not limited to a ring shape (donut shape), and may be an arbitrary shape according to the shape of the substrate sample.

It is a schematic block diagram which shows the main concepts of this invention. It is a schematic block diagram of the joining apparatus of this invention Example 1. FIG. It is a schematic block diagram of the joining apparatus of this invention Example 1. FIG. It is a schematic block diagram of the joining apparatus of this invention Example 2. FIG. It is a schematic block diagram of the electrode mechanism for anodic bonding of this invention Example 3. FIG. It is a schematic block diagram of the electrode mechanism for anodic bonding of Example 4 of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,101 Alignment chamber 2,102,202 Junction chamber 3,103 Gate valve 4,104 Viewing window 5 Substrate sample
6, 106 Fine movement mechanism 7, 107 Sample stage 8 Temporary fixing jig 9 Upper head 10, 110 Monitor system 20, 120 Microwave power supply 105, 205, 380, 480 Upper substrate sample 108 Temporary fixing mechanism 111, 211, 325, 425 Heater 112 Edge support 113 Optical microscope 115, 215 Lower substrate sample 118 Clamp claw 127 Chamber moving mechanism 128 Clamp guide 131 Spring 140, 300, 400 Anode bonding electrode mechanism 141 Tip electrode 142, 340, 440 Feed line
143, 360, 460 High voltage power supply 150 Electrode drive mechanism 209 Pressurization head 250 Pressurization drive mechanism 310A, 410A Tip electrode A
310B, 410B Tip electrode B
310C, 410C Tip electrode C
310D, 410D Tip electrode D
320, 420 Insulator 330A Connection conductor A
330B Connecting conductor B
330C Connecting conductor C
330D Connecting conductor D
465 high voltage switch

Claims (7)

An apparatus for plasma-cleaning two substrate samples, aligning them in a vacuum or an inert gas, and then anodically bonding the two substrate samples,
An alignment chamber that houses an alignment mechanism that performs alignment while holding two substrate samples;
A gate valve having a “view window” and connected to the upper opening of the alignment chamber;
An electrode mechanism for anodic bonding that is connected to an external high voltage power source for anodic bonding, and contacts the upper surface of the two aligned substrate samples that are in close contact with each other to bond the two substrate samples. And a joining chamber coupled to the upper surface of the gate valve;
A sample cleaning mechanism provided in a bonding chamber or an alignment chamber and using plasma by microwave excitation;
A monitor system for observing a substrate sample during alignment from the gate valve “view window”;
A chamber moving mechanism for moving / withdrawing the bonding chamber to the side or upward for observing a substrate sample by the monitor system;
A bonding apparatus comprising: a monitor system moving mechanism for moving the monitor system above the “view window” for observing a substrate sample by the monitor system. After the two substrate samples were plasma cleaned, they were aligned in a vacuum or in an inert gas, and then the two substrate samples were joined using a thermocompression bonding method, a solder welding method, or a bonding method using an adhesive. And
An alignment chamber that houses an alignment mechanism that performs alignment while holding two substrate samples;
A gate valve having a “view window” and connected to the upper opening of the alignment chamber;
A bonding chamber containing a pressure head for pressing two substrate samples from the upper surface at the time of bonding, and connected to the upper surface of the gate valve;
A sample cleaning mechanism using microwave-excited plasma provided in the bonding chamber or the alignment chamber;
A monitor system for observing a substrate sample during alignment from the gate valve “view window”;
A chamber moving mechanism for moving / withdrawing the bonding chamber to the side or upward for observing a substrate sample by the monitor system;
A bonding apparatus comprising: a monitor system moving mechanism for moving the monitor system above the “view window” for observing a substrate sample by the monitor system. In an alignment mechanism that aligns while monitoring from above the sample to join two substrate samples,
A sample stage on which the lower substrate sample is placed;
A fine movement mechanism connected to the sample stage and finely moving the sample stage in the XY-θ (rotation) -Z (height) direction;
A peripheral support which is disposed above the sample stage and supports only the peripheral edge of the upper substrate sample;
A temporary fixing jig for adhering and temporarily fixing two substrate samples to each other by applying a weight of a member or a load by a spring to the upper surface of the peripheral portion of the upper substrate sample after the alignment is completed;
After the alignment is completed, the lower substrate sample is raised in the Z (height) direction to bring the two substrate samples into close contact with each other, and further pushed upward to release the lower substrate sample from the peripheral support, and further upward The upper substrate specimen is brought into contact with the temporary fixing jig, and then further pushed up, whereby the two substrate samples after alignment are completed and temporarily fixed by the load from the temporary fixing jig. Alignment mechanism. Using the alignment mechanism according to claim 3 as an alignment mechanism,
The whole alignment mechanism is accommodated in the alignment chamber, or the fine movement mechanism is disposed outside the alignment chamber, and parts other than the fine movement mechanism (sample stage, etc.) are accommodated in the alignment chamber. The joining apparatus according to claim 1 or 2. 5. The heater according to claim 1, wherein the pressure head or the electrode for anodic bonding and / or one of the sample tables are each provided with a heater whose temperature is controlled from outside the chamber. The joining apparatus as described. The pressure head or anodic bonding electrode and / or the sample stage has an individual structure that is divided into two or more, and for the individual structure, temperature, load, load operation start / end time, application The voltage, the voltage application start time / the end time, and at least one condition is controlled independently for each of the individual structures. The joining apparatus as described in. 7. The joining apparatus according to claim 1, 2, 4, 5, or 6, wherein the monitor system is configured by a visible light microscope or an infrared microscope.

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