JP2007329493A5

JP2007329493A5 -

Info

Publication number: JP2007329493A5
Application number: JP2007196840A
Authority: JP
Filing date: 2007-07-30
Publication date: 2009-03-19
Anticipated expiration: 2019-02-26

Claims

(A) a first mold surface , a first mold having a first cavity formed on the first mold surface, and a second mold surface having a second mold surface facing the first mold surface. preparing a molding die a composed of a mold,
(B) a first surface on which irregularities are formed, and a film of the resin system having a second surface opposite the first surface, and assembly, and the first cavity of the first mold wherein step to place between the second mold surface of the second mold,
(C) closing Ji previous SL first mold and the second mold, a molding resin to Hama charge within the first cavity, forming a seal on the assembly,
After; (d) (c) step, the first open mold and the second mold, a step of releasing the assembly the sealing portion is formed from the mold,
Only including,
In the step (b), the film is placed between the first cavity and the second mold surface so that the first surface of the film faces the first cavity. Place the assembly between the mold surface and
In the step (c), the mold resin is supplied between the film and the assembly .

And have you to claim 1,
The first mold of the mold is provided with a suction port that opens to the first cavity;
Before filling the molding resin into the first cavity, the film was drawn through the suction port, a semiconductor integrated characterized by Rukoto brought into close contact with the first surface of the film to the first cavity A method of manufacturing a circuit device.

And have you to claim 2,
Wherein in the step (b), the film is disposed between the second die surface of said second mold and said first mold the first cavity, after sucking the film, the A manufacturing method of a semiconductor integrated circuit device , wherein the assembly is disposed between a film and the second mold surface of the second mold .

And have you to claim 4,
Before the film is disposed between the first cavity of the first mold and the second mold surface of the second mold, ionized dry air is supplied to the film. A method for manufacturing a semiconductor integrated circuit device.

And have you to claim 4,
The film is supplied between the first cavity of the first mold and the second mold surface of the second mold by a film supply roller,
After forming the sealing portion and opening the first mold and the second mold, the first cavity of the first mold and the second mold of the second mold by a film winding roller. A method for manufacturing a semiconductor integrated circuit device, wherein the film is wound from between mold surfaces .

In any of claims 1 or 5,
The assembly is composed of a chip support member and a semiconductor chip mounted on the chip support member,
In the step (b), the film is disposed between the first cavity and the semiconductor chip. A method of manufacturing a semiconductor integrated circuit device, comprising:

In claim 6,
The chip support member has a chip support surface on which a substrate electrode is formed, and a back surface opposite to the chip support surface,
The semiconductor chip has a main surface on which pads are formed,
The assembly includes the chip support member, the semiconductor chip, and a connection member that electrically connects the substrate electrode of the chip support member and the pad of the semiconductor chip. A method of manufacturing a semiconductor integrated circuit device.

In claim 7,
The method for manufacturing a semiconductor integrated circuit device, wherein the connecting member is a bonding wire.

In claim 6,
The chip support member has a plurality of chip support surfaces each having a substrate electrode formed thereon, and a back surface opposite to the plurality of chip support surfaces.
The semiconductor chip has a main surface on which pads are formed,
The assembly includes a plurality of the semiconductor chips mounted on each of the plurality of chip support surfaces of the chip support member, the substrate electrode of the chip support member, and the pads of the plurality of semiconductor chips. And a connecting member for electrically connecting the semiconductor integrated circuit device.

In claim 9,
The method for manufacturing a semiconductor integrated circuit device, wherein the connecting member is a bonding wire.

In any of claims 1, 5 or 6,
In the step (c), the mold resin is filled by a transfer method.

In any one of claims 1, 5, 6, or 11
The method of manufacturing a semiconductor integrated circuit device, wherein a surface of the sealing part released from the mold is formed into a rough surface.