JP2007325441A - Method for connecting return path conductor of dc coaxial power cable - Google Patents

Method for connecting return path conductor of dc coaxial power cable Download PDF

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JP2007325441A
JP2007325441A JP2006154113A JP2006154113A JP2007325441A JP 2007325441 A JP2007325441 A JP 2007325441A JP 2006154113 A JP2006154113 A JP 2006154113A JP 2006154113 A JP2006154113 A JP 2006154113A JP 2007325441 A JP2007325441 A JP 2007325441A
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layer
semiconductive layer
return conductor
return
cable
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JP2006154113A
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JP4904090B2 (en
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Takehiko Mizuno
健彦 水野
Shinichi Kawakami
真一 川上
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Electric Power Development Co Ltd
Fujikura Ltd
Viscas Corp
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Electric Power Development Co Ltd
Fujikura Ltd
Viscas Corp
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Priority to JP2006154113A priority Critical patent/JP4904090B2/en
Application filed by Electric Power Development Co Ltd, Fujikura Ltd, Viscas Corp filed Critical Electric Power Development Co Ltd
Priority to RU2008123855/07A priority patent/RU2404498C2/en
Priority to PCT/JP2007/060839 priority patent/WO2007142069A1/en
Priority to CN2007800050583A priority patent/CN101385211B/en
Priority to CN2011100520125A priority patent/CN102170053B/en
Priority to CN2011100520144A priority patent/CN102255213B/en
Priority to EP16173784.6A priority patent/EP3096427B1/en
Priority to EP07744273.9A priority patent/EP2026439B1/en
Priority to CN2011100520356A priority patent/CN102170054B/en
Publication of JP2007325441A publication Critical patent/JP2007325441A/en
Priority to NO20081510A priority patent/NO344663B1/en
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for connect the return path conductors of DC coaxial cables with no risk of thermal damage on the external semiconductive layer and the main insulation layer of a cable, or the external semiconductive layer and the reinforcing main insulator at the joint when the return path conductors are connected by welding. <P>SOLUTION: A thermal buffer layer 25 is provided on an external semiconductive layer 4 in the region of a return path conductor 5 performing connection by welding, and the return path conductor 5 is connected by welding on the thermal buffer layer 25. The thermal buffer layer 25 is formed by winding up a semiconductive cushion tape from the external semiconductive layer 4 of a cable to the external semiconductive layer 24 at the joint such that the outside diameter becomes uniform. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、中心の主導体と同軸状に帰路導体を有する電力用直流同軸ケーブル同士の接続部における帰路導体の接続方法に関するものである。   The present invention relates to a method for connecting a return conductor at a connection portion between power DC coaxial cables having a return conductor coaxially with a central main conductor.

図４に電力用直流同軸ケーブルの一例を示す。この直流同軸ケーブルは、中心に主導体１を有し、その外側に、内部半導電層２、主絶縁層３、外部半導電層４、帰路導体５、帰路内部半導電層６、帰路絶縁層７、帰路外部半導電層８、鉛被９、防食層１０を、順次同軸状に設けたものである（特許文献１の図１参照）。   FIG. 4 shows an example of a power DC coaxial cable. This DC coaxial cable has a main conductor 1 in the center, and an outer side of the inner semiconductive layer 2, a main insulating layer 3, an outer semiconductive layer 4, a return conductor 5, a return inner semiconductive layer 6, and a return insulating layer. 7, a return external semiconductive layer 8, a lead coating 9, and an anticorrosion layer 10 are sequentially provided coaxially (see FIG. 1 of Patent Document 1).

主導体１から外部半導電層４まではケーブルコア１１を構成している。帰路導体５は、ケーブルコア１１の外周に多数の帰路導体素線（銅線）を同心撚りすることにより形成される。帰路導体素線の撚り方には、撚り方向が変わらない一方向撚り（らせん巻き）と、一定のピッチで撚り方向が反転するＳＺ撚り（特許文献１の図２参照）とがある。   A cable core 11 is formed from the main conductor 1 to the outer semiconductive layer 4. The return conductor 5 is formed by concentrically twisting a large number of return conductor wires (copper wires) around the outer periphery of the cable core 11. There are two ways of twisting the return conductor element: one-direction twist (spiral winding) in which the twist direction does not change, and SZ twist (see FIG. 2 of Patent Document 1) in which the twist direction is reversed at a constant pitch.

このような直流同軸ケーブル同士を接続する場合、ケーブル接続部において帰路導体も接続する必要がある。従来、帰路導体を接続する方法としては、帰路導体素線を１本ずつ突き合わせ溶接する方法が知られている（特許文献１参照）。図５（イ）、（ロ）は、ケーブルコア１１上に帰路導体素線１２が一方向撚りされている場合の帰路導体５の接続状態を示し、同（ハ）は帰路導体素線１２がＳＺ撚りされている場合の帰路導体５の接続状態を示す。１３が帰路導体素線１２の溶接接続部である。   When connecting such DC coaxial cables, it is also necessary to connect a return conductor at the cable connecting portion. Conventionally, as a method of connecting return conductors, a method of butt welding the return conductor strands one by one is known (see Patent Document 1). FIGS. 5A and 5B show the connection state of the return conductor 5 when the return conductor 12 is twisted in one direction on the cable core 11, and FIG. 5C shows the return conductor 12 being connected. The connection state of the return conductor 5 when it is SZ twisted is shown. Reference numeral 13 denotes a welding connection portion of the return conductor 12.

特開平１１−１１１０７１号公報JP 11-1111071 A

帰路導体がケーブルコア上に同心撚りされた直流同軸ケーブル同士を接続する場合には、ケーブルコア又は接続部の外部半導電層上で帰路導体素線を溶接する必要があり、溶接時に発生する熱が、ケーブルの外部半導電層及び主絶縁層や、接続部の外部半導電層及び補強主絶縁体に熱的損傷を与えるという問題がある。   When connecting DC coaxial cables in which the return conductors are concentrically twisted on the cable core, it is necessary to weld the return conductor strands on the cable core or the outer semiconductive layer of the connection, and heat generated during welding However, there is a problem that the external semiconductive layer and the main insulating layer of the cable and the external semiconductive layer and the reinforced main insulator of the connection portion are thermally damaged.

この問題を解決するためには、帰路導体素線をＳＺ撚りした直流同軸ケーブルを使用し、図５（ハ）のように、溶接する帰路導体素線をケーブルコア又は接続部の外部半導電層から離して溶接し、溶接後に帰路導体素線を再びＳＺ撚り状態に戻す方法が考えられる。しかしこの方法は、帰路導体素線をＳＺ撚りした直流同軸ケーブル同士の接続にしか適用できない。また帰路導体素線をＳＺ撚りした直流同軸ケーブルは、帰路導体素線を一方向撚りした直流同軸ケーブルに比べ、生産性が低く、コストが高くなるので、帰路導体素線の溶接接続のためだけに帰路導体素線をＳＺ撚りにすることは得策ではない。   In order to solve this problem, a DC coaxial cable in which return conductor strands are SZ-twisted is used, and the return conductor strands to be welded are connected to the outer semiconductive layer of the cable core or connection portion as shown in FIG. It is conceivable to weld away from the wire and return the return conductor wire to the SZ twisted state again after welding. However, this method can be applied only to the connection of DC coaxial cables in which return conductor wires are SZ twisted. Also, the DC coaxial cable with SZ twisted return conductor strands is less productive and expensive than the DC coaxial cable with twisted return conductor strands, so it is only for welding connection of return conductor strands. However, it is not a good idea to make the return conductor strand SZ twisted.

本発明の目的は、帰路導体を溶接接続するときに、ケーブルの外部半導電層及び主絶縁層や、接続部の外部半導電層及び補強主絶縁体に熱的損傷を与えるおそれのない直流同軸ケーブルの帰路導体接続方法を提供することにある。   It is an object of the present invention to provide a direct current coaxial cable that does not cause thermal damage to the outer semiconductive layer and main insulating layer of the cable and the outer semiconductive layer and reinforcing main insulator of the connecting portion when the return conductor is connected by welding. It is to provide a return conductor connection method of a cable.

本発明は、中心に主導体を有し、その外側に内部半導電層、主絶縁層、外部半導電層を有し、その外側に多数の帰路導体素線を同心撚りしてなる帰路導体を有する電力用直流同軸ケーブル同士の接続部における前記帰路導体の接続方法であって、帰路導体の溶接接続を行う領域の外部半導電層上に熱的緩衝層を設け、この熱的緩衝層上で帰路導体の溶接接続を行うことを特徴とするものである。   The present invention has a return conductor comprising a main conductor at the center, an inner semiconductive layer, a main insulating layer, and an outer semiconductive layer on the outer side, and a plurality of return conductor strands concentrically twisted on the outer side. A method of connecting the return conductors in a connection portion between the DC coaxial cables for power having a thermal buffer layer provided on an external semiconductive layer in an area where welding of the return conductors is performed, and on the thermal buffer layer A return conductor is connected by welding.

本発明において、熱的緩衝層は、ケーブルの外部半導電層上に形成することが好ましい。
また、この熱的緩衝層は、半導電性クッションテープを接続部の外部半導電層の外径と同一になるように巻き上げて形成することが望ましい。 In the present invention, the thermal buffer layer is preferably formed on the outer semiconductive layer of the cable.
The thermal buffer layer is preferably formed by winding a semiconductive cushion tape so as to be the same as the outer diameter of the external semiconductive layer of the connecting portion.

本発明によれば、帰路導体の溶接接続を行う領域の外部半導電層上に熱的緩衝層を設け、この熱的緩衝層上で帰路導体の溶接接続を行うので、帰路導体の溶接時の熱が、ケーブルの外部半導電層及び主絶縁層や、接続部の外部半導電層及び補強主絶縁体に熱的損傷を与えるおそれがなくなる。また熱的緩衝層を設けることにより、帰路導体を溶接接続する際に、ケーブルの外部半導電層及び主絶縁層や、接続部の外部半導電層及び補強主絶縁体に外傷を与えるおそれもなくすことができる。   According to the present invention, the thermal buffer layer is provided on the outer semiconductive layer in the region where the return conductor is welded, and the return conductor is welded on the thermal buffer layer. There is no risk that heat will cause thermal damage to the outer semiconductive layer and the main insulating layer of the cable and the outer semiconductive layer and the reinforced main insulator of the connecting portion. In addition, by providing a thermal buffer layer, there is no risk of damaging the external semiconductive layer and main insulation layer of the cable, and the external semiconductive layer and reinforcing main insulation of the connection part when welding the return conductor. be able to.

また、直流同軸ケーブルの接続部では、接続部の外部半導電層の外径よりケーブルの外部半導電層の外径の方が小さいので、この外径差を利用して、ケーブルの外部半導電層上に熱的緩衝層を形成すれば、直流同軸ケーブル接続部の外径を小さく抑えることができると共に、帰路導体の接続作業性を向上させることができる。
さらに熱的緩衝層から接続部の外部半導電層までの外径を同一にすれば、帰路導体の屈曲を少なくできる利点がある。 In addition, in the connection part of the DC coaxial cable, the outer diameter of the outer semiconductive layer of the cable is smaller than the outer diameter of the outer semiconductive layer of the connection part. If the thermal buffer layer is formed on the layer, the outer diameter of the DC coaxial cable connection portion can be suppressed and the connection workability of the return conductor can be improved.
Furthermore, if the outer diameters from the thermal buffer layer to the external semiconductive layer of the connecting portion are made the same, there is an advantage that the bending of the return conductor can be reduced.

図１は本発明に係る帰路導体接続方法を適用した電力用直流同軸ケーブル接続部を示す。接続すべき直流同軸ケーブルＡ、Ｂはそれぞれ、防食層１０、鉛被９、帰路絶縁層７（その内外の半導電層は図示省略）、外部半導電層４、主絶縁層３、内部半導電層（図示省略）を順次段剥ぎして先端に主導体１を露出させ、主導体１同士を溶接接続してある。２１は主導体１の溶接接続部である。２２は溶接接続部２１とその両側のケーブルの内部半導電層（図示省略）に跨るように形成された接続部の内部半導電層、２３は内部半導電層２２とその両側の主絶縁層３、３に跨るように形成された補強主絶縁体、２４は補強主絶縁体２３とその両側のケーブルの外部半導電層４に跨るように形成された接続部の外部半導電層である。   FIG. 1 shows a power DC coaxial cable connecting portion to which a return conductor connecting method according to the present invention is applied. The DC coaxial cables A and B to be connected are the anticorrosion layer 10, the lead sheath 9, the return insulating layer 7 (the inner and outer semiconductive layers are not shown), the outer semiconductive layer 4, the main insulating layer 3, and the inner semiconductive. The layers (not shown) are sequentially stripped to expose the main conductor 1 at the tip, and the main conductors 1 are welded together. Reference numeral 21 denotes a weld connection portion of the main conductor 1. 22 is an internal semiconductive layer of a connecting portion formed so as to straddle a welded connecting portion 21 and internal semiconductive layers (not shown) of cables on both sides thereof, and 23 is an internal semiconductive layer 22 and a main insulating layer 3 on both sides thereof. 3 is a reinforcing main insulator formed so as to straddle 3, and 24 is an external semiconducting layer of the connecting portion formed so as to straddle the reinforcing semiinsulator 23 and the external semiconducting layers 4 of the cables on both sides thereof.

接続部の外部半導電層２４を形成するまでの接続作業は従来と同じである。この実施形態では、一方のケーブルＡの外部半導電層４を露出させた領域Ｐで帰路導体５の溶接接続を行うこととし、その領域Ｐに熱的緩衝層２５を設ける。熱的緩衝層２５は一方のケーブルＡの外部半導電層４と接続部の外部半導電層２４に跨るように設けられる。熱的緩衝層２５は、半導電性クッションテープを巻くことにより形成することが好ましい。熱的緩衝層２５は、電気絶縁性のテープやシート（例えばフッ素樹脂系、シリコーンゴム系、エチレンプロピレンゴム系、ブチルゴム系のテープやシート）を巻きつけることにより形成してもよい。熱的緩衝層２５は、ケーブルの外部半導電層から接続部の外部半導電層にかけて、半導電性クッションテープを接続部の外部半導電層の最大径部と外径が同一になるように巻き上げることにより形成することがより好ましい。通常、ケーブルの主絶縁層と、接続部の補強主絶縁体との外径差は６〜４０mm程度であるため、半導電性クッションテープ巻きによる熱的緩衝層の厚さは３〜２０mm程度となる。帰路導体溶接時の熱による熱的損傷を防止するのに必要な半導電性クッションテープの巻き厚は３mm以上であり、この半導電性クッションテープの巻き厚は、帰路導体溶接作業時におけるケーブルの外部半導電層及び主絶縁層の熱的損傷を防止すると共に、外傷防止にも十分な厚さである。   The connection work up to the formation of the external semiconductive layer 24 of the connection portion is the same as the conventional one. In this embodiment, the return conductor 5 is welded in the region P where the external semiconductive layer 4 of one cable A is exposed, and the thermal buffer layer 25 is provided in the region P. The thermal buffer layer 25 is provided so as to straddle the external semiconductive layer 4 of one cable A and the external semiconductive layer 24 of the connection portion. The thermal buffer layer 25 is preferably formed by winding a semiconductive cushion tape. The thermal buffer layer 25 may be formed by winding an electrically insulating tape or sheet (for example, a fluororesin, silicone rubber, ethylene propylene rubber, or butyl rubber tape or sheet). The thermal buffer layer 25 winds the semiconductive cushion tape from the outer semiconductive layer of the cable to the outer semiconductive layer of the connection portion so that the outer diameter of the semiconductive cushion tape is the same as the maximum diameter portion of the outer semiconductive layer of the connection portion. It is more preferable to form by this. Usually, since the difference in outer diameter between the main insulation layer of the cable and the reinforcing main insulation of the connection portion is about 6 to 40 mm, the thickness of the thermal buffer layer by the semiconductive cushion tape winding is about 3 to 20 mm. Become. The winding thickness of the semiconductive cushion tape necessary to prevent thermal damage due to heat during return conductor welding is 3 mm or more. The winding thickness of this semiconductive cushion tape is the same as that of the cable during the return conductor welding operation. The thickness is sufficient to prevent thermal damage to the external semiconductive layer and the main insulating layer and to prevent damage.

上記のように熱的緩衝層２５を形成した後、熱的緩衝層２５上で両ケーブルの帰路導体５の溶接接続を行う。２６は帰路導体５の溶接接続部である。ケーブルＡの外部半導電層４上には熱的緩衝層２５が設けられているため、帰路導体５を溶接する際の熱で当該外部半導電層４及び主絶縁層３並びに接続部の外部半導電層２４及び補強主絶縁体２３が熱的損傷を受けるおそれがない。また熱的緩衝層２５を設けておくと、帰路導体５の溶接をする際に、工具等でケーブルの外部半導電層４及び主絶縁層３等が機械的損傷を受けるのを防止することもできる。また上記のように熱的緩衝層２５の外径を、ケーブルの外部半導電層４から接続部の外部半導電層２４上にかけて一様にしておくと、帰路導体の溶接接続作業を容易に行えると共に、ケーブル接続部全体の外径を小さく抑えることができる。   After forming the thermal buffer layer 25 as described above, the return conductors 5 of both cables are welded and connected on the thermal buffer layer 25. Reference numeral 26 denotes a weld connection portion of the return conductor 5. Since the thermal buffer layer 25 is provided on the external semiconductive layer 4 of the cable A, the external semiconductive layer 4 and the main insulating layer 3 and the external half of the connection portion are heated by heat when the return conductor 5 is welded. There is no possibility that the conductive layer 24 and the reinforcing main insulator 23 are thermally damaged. In addition, when the thermal buffer layer 25 is provided, it is possible to prevent the external semiconductive layer 4 and the main insulating layer 3 of the cable from being mechanically damaged by a tool or the like when the return conductor 5 is welded. it can. Further, if the outer diameter of the thermal buffer layer 25 is made uniform from the outer semiconductive layer 4 of the cable to the outer semiconductive layer 24 of the connecting portion as described above, the welding operation of the return conductor can be easily performed. At the same time, the outer diameter of the entire cable connecting portion can be kept small.

ところで、帰路導体５を溶接接続する場合には、帰路導体素線を１本ずつ溶接してもよいが、図２又は図３に示すように、帰路導体素線５Ｓを複数本ずつの束５Ｔにして、束５Ｔ同士を溶接接続するとよい。図２は素線束５Ｔ同士を直接突き合わせて溶接した場合、図３は素線束５Ｔを銅板などの中継ぎ導体３０を介して溶接接続した場合である。このようにすると、溶接回数が少なくなり、溶接作業を効率よく行うことができる。なお、帰路導体の構成（素線径や本数）が異なる場合は、図３のように接続すると容易であるが、素線束を適切に構成することにより図２の直接突き合わせ溶接による接続を採用することもできる。   By the way, when the return conductor 5 is connected by welding, the return conductor strands may be welded one by one. However, as shown in FIG. 2 or 3, a plurality of return conductor strands 5S is bundled 5T. Thus, the bundles 5T may be welded together. FIG. 2 shows a case where the wire bundles 5T are directly abutted and welded, and FIG. 3 shows a case where the wire bundles 5T are welded and connected via a relay conductor 30 such as a copper plate. If it does in this way, the frequency | count of welding will decrease and welding work can be performed efficiently. If the return conductor configuration (element diameter and number) is different, it is easy to connect as shown in FIG. 3, but the connection by direct butt welding in FIG. 2 is adopted by appropriately configuring the element bundle. You can also.

帰路導体５を溶接接続した後の接続作業は従来と同様である。すなわち、両ケーブルの帰路絶縁層７に跨るように補強帰路絶縁体２７を形成し、鉛被２８及び防食層２９を設ければよい。なお、補強帰路絶縁体２７の内側には、両ケーブルの帰路内部半導電層に跨るように接続部の帰路内部半導電層が設けられ、補強帰路絶縁体２７の外側には、両ケーブルの帰路外部半導電層に跨るように接続部の帰路外部半導電層が設けられるが、図示を省略してある。   The connection work after the return conductor 5 is connected by welding is the same as in the prior art. That is, the reinforced return insulator 27 may be formed so as to straddle the return insulation layer 7 of both cables, and the lead coating 28 and the anticorrosion layer 29 may be provided. A return internal semiconductive layer of the connecting portion is provided inside the reinforced return insulator 27 so as to straddle the return internal semiconductive layers of both cables, and the return paths of both cables are provided outside the reinforced return insulator 27. A return external semiconductive layer of the connecting portion is provided so as to straddle the external semiconductive layer, but the illustration is omitted.

本発明に係る帰路導体接続方法は、直流同軸ケーブルに限らす、例えばワイヤーシールド等の外部導体を有する交流用電力ケーブルの接続部における外部導体の接続にも適用できる。   The return conductor connection method according to the present invention can be applied not only to a DC coaxial cable but also to connection of an external conductor in a connection portion of an AC power cable having an external conductor such as a wire shield.

次に本発明の実施例を説明する。ここで取り扱う直流同軸ケーブルは図４に示す通り、ケーブル主導体１上に内部半導電層２、架橋ポリエチレン主絶縁層３及び外部半導電層４が順次設けられている。通常、内部半導電層２、架橋ポリエチレン主絶縁層３及び外部半導電層４は同時押出法により形成され、内部半導電層２と架橋ポリエチレン主絶縁層３の間、ならびに架橋ポリエチレン主絶縁層３と外部半導電層４との間は一体化されている。外部半導電層４の外周には銅素線(帰路導体素線)が多数本一方向撚りされて形成された帰路導体５が設けられている。帰路導体５上には、帰路内部半導電層６を介して帰路導体の絶縁層としてポリエチレン帰路絶縁層７が設けられ、その上に帰路外部半導電層８、鉛被９、防食層１０が設けられている。なお、本発明の帰路導体接続方法の適用は、図４の直流同軸ケーブル構造には限定されないことはもちろんである。   Next, examples of the present invention will be described. As shown in FIG. 4, the DC coaxial cable handled here has an inner semiconductive layer 2, a cross-linked polyethylene main insulating layer 3, and an outer semiconductive layer 4 sequentially provided on the cable main conductor 1. Usually, the inner semiconductive layer 2, the cross-linked polyethylene main insulating layer 3 and the outer semi-conductive layer 4 are formed by a coextrusion method, and between the inner semi-conductive layer 2 and the cross-linked polyethylene main insulating layer 3, and the cross-linked polyethylene main insulating layer 3 And the outer semiconductive layer 4 are integrated. On the outer periphery of the outer semiconductive layer 4, a return conductor 5 formed by twisting a large number of copper wires (return conductor wires) in one direction is provided. On the return conductor 5, a polyethylene return insulating layer 7 is provided as an insulating layer of the return conductor via a return inner semiconductive layer 6, and a return outer semiconductive layer 8, a lead coating 9, and an anticorrosion layer 10 are provided thereon. It has been. Needless to say, the application of the return conductor connection method of the present invention is not limited to the DC coaxial cable structure of FIG.

この実施例は、主導体断面積400mm2、帰路導体素線φ2.6mm×55本（一方向撚り、帰路導体の総断面積約215mm2）の直流同軸ケーブル同士を接続する場合（接続する直流同軸ケーブルＡと直流同軸ケーブルＢは同一構造）である。図１に示すように、主導体１同士は溶接で接続され、主絶縁層３は絶縁テープ巻き後に加熱モールド処理で形成された補強主絶縁体２３で接続され、その上に外部半導電層２４が設けられる。ここで、ケーブルの外部半導電層４の外径はφ53.8mm、接続部の外部半導電層２４の外径はφ63.8mmであり、双方の外部半導電層の外径差は10mm（外半径差５mm）である。 In this embodiment, the main conductor cross-sectional area is 400 mm 2 and the return conductor strand φ2.6 mm × 55 (one-way twisted, total cross-sectional area of the return conductor is about 215 mm 2 ). The coaxial cable A and the DC coaxial cable B have the same structure. As shown in FIG. 1, the main conductors 1 are connected to each other by welding, the main insulating layer 3 is connected by a reinforcing main insulator 23 formed by heating mold processing after winding the insulating tape, and an external semiconductive layer 24 is formed thereon. Is provided. Here, the outer diameter of the outer semiconductive layer 4 of the cable is φ53.8 mm, the outer diameter of the outer semiconductive layer 24 of the connection portion is φ63.8 mm, and the outer diameter difference between the two outer semiconductive layers is 10 mm (outer Radius difference is 5 mm).

その後、一方のケーブルＡの外部半導電層４上から接続部の外部半導電層２４上の範囲にかけて、半導電性クッションテープを１回程度巻いた後、少なくとも帰路導体の溶接領域Ｐを含む、ケーブルの外部半導電層４から接続部の外部半導電層２４のテーパー状端部２４ａにかけて、半導電性クッションテープを巻き上げることにより、厚さ約５mmの熱的緩衝層２５が設けられる。この熱的緩衝層２５は、帰路導体溶接作業時におけるケーブルの外部半導電層及び主絶縁層並びに接続部の外部半導電層及び補強主絶縁体の熱的損傷を防止すると共に、外傷をも防止するものである。この熱的緩衝層は、ケーブルの外部半導電層４と接続部の外部半導電層２４との外半径差（５mm）を利用して形成されている。熱的緩衝層の厚さは前記外半径差より若干大きくすることもできる。帰路導体溶接時の熱によるケーブルの外部半導電層及び主絶縁層等の熱的損傷を防止するのに必要な半導電性クッションテープの巻き厚さは３mm以上であるから、熱的緩衝層の厚さ５mmは帰路導体溶接作業の熱的損傷の防止及び外傷防止に対して十分な厚さである。   Then, after winding the semiconductive cushion tape about once from the outer semiconductive layer 4 of one cable A to the range on the outer semiconductive layer 24 of the connection portion, at least the welding region P of the return conductor is included. A thermal buffer layer 25 having a thickness of about 5 mm is provided by winding up the semiconductive cushion tape from the outer semiconductive layer 4 of the cable to the tapered end portion 24a of the outer semiconductive layer 24 of the connecting portion. This thermal buffer layer 25 prevents thermal damage to the external semiconductive layer and main insulation layer of the cable and the external semiconductive layer and reinforcing main insulation of the connection portion during welding of the return conductor, and also prevents damage. To do. This thermal buffer layer is formed by utilizing the outer radius difference (5 mm) between the external semiconductive layer 4 of the cable and the external semiconductive layer 24 of the connecting portion. The thickness of the thermal buffer layer may be slightly larger than the outer radius difference. Since the winding thickness of the semiconductive cushion tape required to prevent thermal damage to the outer semiconductive layer and main insulation layer of the cable due to heat during return conductor welding is 3 mm or more, the thermal buffer layer The thickness of 5 mm is sufficient for preventing thermal damage and preventing trauma in the return conductor welding operation.

直流同軸ケーブルＡとＢの帰路導体は、熱的緩衝層２５上で図２のように複数の帰路導体素線束５Ｔ毎に突き合わせ溶接される。帰路導体素線束はいずれも帰路導体素線φ2.6mm×５本で構成され、帰路導体素線束５Ｔの溶接接続箇所は１１箇所である。   The return conductors of the DC coaxial cables A and B are butt welded on the thermal buffer layer 25 for each of the plurality of return conductor strands 5T as shown in FIG. Each of the return conductor strands is composed of return conductor strands φ2.6 mm × 5, and there are eleven welding connection locations on the return conductor strand 5T.

上記のように、ケーブルの外部半導電層と接続部の外部半導電層との外径差を利用して熱的緩衝層を設けることにより、直流同軸ケーブル接続部の外径を小さくすることができる。また、接続部の外部半導電層からケーブルの外部半導電層の範囲にかけて半導電性クッションテープの巻き径が同じである方が、帰路導体接続の作業性がよい。   As described above, the outer diameter of the DC coaxial cable connecting portion can be reduced by providing a thermal buffer layer using the outer diameter difference between the outer semiconductive layer of the cable and the outer semiconductive layer of the connecting portion. it can. Moreover, the workability of the return conductor connection is better when the winding diameter of the semiconductive cushion tape is the same from the external semiconductive layer of the connection portion to the external semiconductive layer of the cable.

本発明に係る帰路導体接続方法を適用した直流同軸ケーブルの接続部を示す、（イ）は縦断面図、（ロ）は平面図。The connection part of the direct current | flow coaxial cable to which the return conductor connection method which concerns on this invention is applied is shown, (A) is a longitudinal cross-sectional view, (B) is a top view. 図１の接続方法における帰路導体の溶接方法の一例を示す説明図。Explanatory drawing which shows an example of the welding method of the return conductor in the connection method of FIG. 同じく他の実施形態を示す説明図。Explanatory drawing which similarly shows other embodiment. 電力用直流同軸ケーブルの一例を示す横断面図。The cross-sectional view which shows an example of the direct current | flow coaxial cable for electric power. （イ）、（ロ）、（ハ）はそれぞれ、従来の直流同軸ケーブルの帰路導体接続方法を示す説明図。(A), (B), (C) is an explanatory view showing a return conductor connection method of a conventional DC coaxial cable.

符号の説明Explanation of symbols

１：ケーブルの主導体
２：ケーブルの内部半導電層
３：ケーブルの主絶縁層
４：ケーブルの外部半導電層
５：帰路導体
７：ケーブルの帰路絶縁層
２１：主導体の溶接部
２２：接続部の内部半導電層
２３：接続部の補強主絶縁体
２４：接続部の外部半導電層
２５：熱的緩衝層
２６：帰路導体の溶接部 1: Cable main conductor 2: Cable inner semiconductive layer 3: Cable main insulating layer 4: Cable outer semiconductive layer 5: Return conductor 7: Cable return insulating layer 21: Main conductor weld 22: Connection Internal semiconductive layer 23 of part: Reinforcement main insulator 24 of connection part: External semiconductive layer 25 of connection part: Thermal buffer layer 26: Welded part of return conductor

Claims (2)

中心に主導体を有し、その外側に内部半導電層、主絶縁層、外部半導電層を有し、その外側に多数の帰路導体素線を同心撚りしてなる帰路導体を有する電力用直流同軸ケーブル同士の接続部における前記帰路導体の接続方法であって、帰路導体の溶接接続を行う領域の外部半導電層上に熱的緩衝層を設け、この熱的緩衝層上で帰路導体の溶接接続を行うことを特徴とする電力用直流同軸ケーブルの帰路導体接続方法。   Direct current for power having a main conductor at the center, an inner semiconductive layer, a main insulating layer, and an outer semiconductive layer on the outside, and a return conductor formed by concentrically twisting a number of return conductor wires on the outside A method of connecting the return conductors in a connection portion between coaxial cables, wherein a thermal buffer layer is provided on an external semiconductive layer in a region where welding connection of the return conductors is performed, and the return conductor is welded on the thermal buffer layer A return conductor connection method for a DC coaxial cable for power, characterized in that connection is made. 熱的緩衝層を、ケーブルの外部半導電層上に形成したことを特徴とする請求項１記載の電力用直流同軸ケーブルの帰路導体接続方法。   2. The return conductor connection method for a power DC coaxial cable according to claim 1, wherein the thermal buffer layer is formed on the outer semiconductive layer of the cable.
JP2006154113A 2006-06-02 2006-06-02 Return conductor connection method for DC coaxial cable for electric power Active JP4904090B2 (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP2006154113A JP4904090B2 (en) 2006-06-02 2006-06-02 Return conductor connection method for DC coaxial cable for electric power
CN2011100520356A CN102170054B (en) 2006-06-02 2007-05-28 Connection portion of power supply DC coaxial cables
CN2007800050583A CN101385211B (en) 2006-06-02 2007-05-28 Method for connecting return conductors of power supply DC coaxial cables and connection portion between power supply dc coaxial cables
CN2011100520125A CN102170053B (en) 2006-06-02 2007-05-28 Connection portion between power supply DC coaxial cables
CN2011100520144A CN102255213B (en) 2006-06-02 2007-05-28 Method for connecting return conductors of power supply DC coaxial cables
EP16173784.6A EP3096427B1 (en) 2006-06-02 2007-05-28 Connection of return conductors in a connecting portion of power direct-current coaxial cable
RU2008123855/07A RU2404498C2 (en) 2006-06-02 2007-05-28 Method for connection of counter conductor in supply coaxial dc cable and connecting area of supply coaxial dc cable
PCT/JP2007/060839 WO2007142069A1 (en) 2006-06-02 2007-05-28 Method for connecting return conductors of power supply dc coaxial cables and connection portion between power supply dc coaxial cables
EP07744273.9A EP2026439B1 (en) 2006-06-02 2007-05-28 Connection of return conductors in a connection portion of power direct-current coaxial cables
NO20081510A NO344663B1 (en) 2006-06-02 2008-03-27 Procedure for connecting return conductors to DC coaxial power supply cables and connecting part between DC coaxial power supply cables

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JP2014183619A (en) * 2013-03-18 2014-09-29 Viscas Corp Connection method of power cable and external conductor thereof
CN110809531A (en) * 2017-06-02 2020-02-18 易格斯有限公司 Multi-conductor cable with reduced diameter and contact device for the same
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