JP2007318181A - Adjustment method of development processor, and manufacturing method for semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To shorten adjustment time of development by collectively correcting the temperature distribution of a heating treatment after development, and the nonuniformity of development during a development treatment, in the development treatment. <P>SOLUTION: An adjustment method of a development processor comprises: forming a plurality of exposure monitor patterns (S303) by transferring marks to a plurality of positions of photo-sensitive resin films at set exposure, using an exposure mask in which monitor marks are arranged; subjecting a substrate in which the monitor patterns are formed to a heating treatment (S304) and subsequently to a cooling treatment (S305); subjecting the photo-sensitive resin films to a development treatment (S307), using a development processor for scanning a nozzle whose length-wise length is larger than the maximum width of the substrate; measuring the states (S308) of each of the monitor patterns after the development treatment; obtaining the mean value of the monitor pattern states at a plurality of positions and obtaining the monitor pattern states (S308) in the length-wise direction of the nozzle; and calculating control parameters (S309) of the development processor from the distribution of the monitor pattern states and altering the control parameters (S310). <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a method for adjusting a development processing apparatus used for development processing of a photosensitive resin film, and further relates to a method for manufacturing a semiconductor device using an apparatus adjusted using the method for adjusting a development processing apparatus.

  In a photolithography process in manufacturing a semiconductor integrated circuit, pattern exposure is performed by transferring the desired pattern to a resist film formed on a wafer through a mask on which a desired pattern is formed by an exposure apparatus. .

  Due to the demand for pattern miniaturization, the exposure wavelength has been shortened and the NA of the projection lens has been increased. At the same time, the process has been improved at the same time. However, demands for miniaturization of device patterns in recent years have become more severe, and it has been difficult to obtain a sufficient process margin for exposure latitude and depth of focus, causing a reduction in yield.

  In order to perform optical lithography with a small process margin, accurate analysis and error distribution (error budget) of errors that consume the process margin have been regarded as important. For example, even if a large number of chips are exposed on the wafer at the same set exposure amount, resist sensitivity changes, PEB (Post Exposure Bake), development non-uniformity within the wafer surface, resist wafer surface thickness variation, etc. As a result, the effective appropriate exposure amount varies, which causes a decrease in yield. Therefore, in order to effectively use a small process margin and prevent a decrease in yield, a more accurate exposure amount and an exposure amount to be fed back and fed forward by monitoring the focus and a focus control method are provided. At the same time, for each process unit, it is necessary to perform a precise analysis of the error factor that consumes the process margin, and to improve the main error factor based on the analysis result.

A technique is disclosed in which an effective exposure amount that does not depend on focus is measured, and variation in exposure amount between lots is suppressed based on the measured exposure amount (see, for example, Patent Document 1).
JP 2002-299205 A

  Currently, heat treatment after exposure processing is performed using a plurality of heat treatment apparatuses in order to improve the operating efficiency of the apparatus. The set temperature and the actual heating temperature are different for each apparatus. Since the heating temperature is different for each heat treatment apparatus, there is a problem that the overall yield cannot be improved only by calibrating one apparatus.

  In addition, there is a heat treatment apparatus having a plurality of heat sources in order to improve in-plane temperature uniformity. In this heat treatment apparatus, the set temperature and the actual heating temperature are different for each heat source. Since the heating temperature is different for each heat source processing apparatus, there is a problem that the overall yield cannot be improved only by calibrating one heat source.

  Further, the pattern fluctuates due to temperature unevenness in post-exposure heat treatment and development unevenness in the development process. In order to suppress variations in the pattern, both temperature unevenness and development unevenness may be suppressed. However, there is a problem that it takes time to obtain parameters for performing the two controls.

  An object of the present invention is to provide a method for adjusting a development processing apparatus that collectively corrects the temperature distribution of the post-exposure heat treatment and the development unevenness during the development processing by the development processing to shorten the adjustment time.

  The present invention is configured as follows to achieve the above object.

  The method for adjusting a development processing apparatus according to an example of the present invention includes a step of forming a photosensitive resin film on a substrate and a state of an exposure amount monitor pattern transferred to the photosensitive resin film to obtain the photosensitive resin film. A step of preparing an exposure mask having an exposure amount monitor mark for monitoring the effective exposure amount, and transferring the exposure amount monitor mark to a plurality of positions of the photosensitive resin film at a predetermined set exposure amount. A step of forming a plurality of exposure amount monitor patterns, a step of performing heat treatment on the substrate on which the exposure amount monitor pattern is formed, a step of performing cooling processing on the heat-treated substrate, and a developer. A step of preparing a development processing apparatus that discharges the photosensitive resin film and scans a nozzle having a length in a longitudinal direction larger than the maximum width of the substrate relative to the substrate; and using the development processing apparatus. The A step of developing the photosensitive resin film, a step of measuring the state of each exposure amount monitor pattern after the development processing, and a state of the exposure amount monitor pattern in which the position of the nozzle is located on the scanned line. A step of obtaining an average value, a step of obtaining an average value of the state of the exposure amount monitor pattern for a plurality of positions, obtaining a state distribution of the amount of exposure monitor pattern in the longitudinal direction of the nozzle, and a state distribution of the amount of exposure monitor pattern And calculating a control parameter of the development processing apparatus, and changing the control parameter of the development processing apparatus according to the calculated control parameter.

  The method for adjusting a development processing apparatus according to an example of the present invention includes a step of forming a photosensitive resin film on a substrate and a state of an exposure amount monitor pattern transferred to the photosensitive resin film to obtain the photosensitive resin film. A step of preparing an exposure mask in which an exposure amount monitor mark for monitoring an effective exposure amount is arranged, and a plurality of the photosensitive resin films with the exposure amount monitor mark at a predetermined set exposure amount for each substrate. A step of forming a plurality of exposure dose monitor patterns, a step of performing a heat treatment on each substrate on which the exposure dose monitor pattern is formed, and a step of performing a cooling treatment on each of the heated substrates. A step of measuring the state of each exposure amount monitor pattern after the cooling process, a step of measuring an average value of the state of the exposure amount monitor pattern measured after the cooling process, and a plurality of development processing devices. A step of developing the photosensitive resin film using each development processing device, a step of measuring the state of each exposure amount monitor pattern after the development processing, and development by each development processing device A step of calculating an average value of the state of the exposure amount monitor pattern for each processed substrate, an average value of the state of the exposure amount monitor pattern after the cooling processing, and a state of the exposure amount monitor pattern after the development processing And calculating a control parameter for each of the development processing apparatuses from the average value, and changing the control parameter for each of the development processing apparatuses in accordance with the calculated control parameter.

  The method for adjusting a development processing apparatus according to an example of the present invention includes a step of forming a photosensitive resin film on a substrate and a state of an exposure amount monitor pattern transferred to the photosensitive resin film to obtain the photosensitive resin film. A step of preparing an exposure mask having an exposure amount monitor mark for monitoring the effective exposure amount, and transferring the exposure amount monitor mark to a plurality of positions of the photosensitive resin film at a predetermined set exposure amount. A step of forming a plurality of exposure amount monitor patterns, a step of performing a heat treatment on the substrate on which the exposure amount monitor patterns are formed, a step of performing a cooling treatment on the heat-treated substrate, and a plurality of development processing apparatuses. A step of developing the photosensitive resin film using each development processing device, a step of measuring the state of each exposure amount monitor pattern after the development processing, and each development processing device. Present Calculating the average value of the exposure monitor pattern state for each processed substrate; calculating the control parameter for each of the development processing devices from the average value of the exposure monitor pattern state; And a step of changing the control parameter of each development processing device in accordance with the control parameter.

  According to the present invention, the temperature distribution of the post-exposure heat treatment and the development unevenness during the development treatment can be collectively corrected by the development treatment.

  Embodiments of the present invention will be described below with reference to the drawings.

(First reference example)
FIG. 1 is a flowchart showing the procedure of a calibration method for a heat treatment apparatus according to a first reference example of the present invention.

  First, after a photoresist film is applied and formed on a substrate (S101), pre-exposure heating is performed (S102). Next, a photomask shown in FIG. 2 is prepared. On the photomask 100, an exposure amount monitor mark 200 for monitoring effective resist sensitivity is formed. The exposure amount monitor mark 200 is a mark for forming a pattern on the resist depending on only the exposure amount without depending on the focus position. The exposure amount monitor mark is formed in a dicing area around the device area where the device pattern is formed.

  As shown in FIG. 3, the exposure monitor mark 200 is arranged in a block having a width p in which the light transmitting portion 201 and the light shielding portion 202 are not resolved by the exposure apparatus. A plurality of blocks are continuously arranged in the arrangement direction of the light transmitting part 201 and the light shielding part 202 in the block. In the arrangement direction, the duty ratio between the light transmitting portion 201 and the light shielding portion 202 in the block changes monotonously. A plurality of blocks may be arranged intermittently.

Consider a case where a mask whose effective exposure amount is to be monitored is set in an exposure apparatus having a numerical aperture NA, a coherent factor σ, and an exposure wavelength λ. The condition of the width p (wafer dimension) of the block that is not resolved by this apparatus is based on diffraction theory.
λ / p ≧ (1 + σ) NA (1)
It becomes.

  By setting the period of the monitor mark to the condition of the expression (1), the diffracted light (first-order or higher-order diffracted light) at the exposure monitor mark does not enter the pupil of the projection lens, but only the straight light (zero-order diffracted light) Comes into the eyes. By satisfying the above conditions, the monitor mark pattern is below the resolution limit. If the exposure dose monitor mark pattern has a pitch less than or equal to the resolution limit, the pattern is not resolved, resulting in flat exposure with different exposure amounts reaching the wafer surface according to the aperture ratio. For this reason, even if the set exposure amount of the exposure apparatus is the same, the effective exposure amount changes according to the aperture ratio. In this case, since the exposure amount monitor mark pattern is not resolved, the influence of the focus fluctuation can be completely eliminated.

  Considering that the exposure conditions used are exposure wavelength λ = 248 nm, NA = 0.68, and σ = 0.75, the period of the monitor mark is diffracted light (first-order or higher order diffracted light) in the mask pattern. 0.2 μm in terms of wafer was used so as to satisfy Expression (1), which is a condition that only the straight light (0th order diffracted light) enters the pupil without entering the pupil of the projection lens.

  FIG. 4 shows the intensity distribution on the wafer surface obtained when the exposure amount monitor mark shown in FIG. 3 is transferred to the photoresist film. Since only the 0th-order diffracted light diffracted by the monitor mark is irradiated on the wafer surface, the image intensity distribution is a distribution proportional to the square of the area of the transmission part. Therefore, when heating and cooling after exposure are performed using this mask, a latent image (exposure monitor pattern) of the exposure monitor mark is formed on the photoresist film, and the film thickness distribution as shown in FIG. Become. By measuring this pattern with an optical line width measuring device, an effective exposure amount after the heat treatment can be obtained. Further, after the development processing, the photoresist film has a film thickness distribution as shown in FIG. By measuring this pattern with an optical line width measuring device, an effective exposure amount after development processing can be obtained.

  Using the photomask shown in FIG. 2, the exposure amount monitor mark is transferred to a photoresist film formed on the substrate with a predetermined exposure amount to form an exposure amount monitor pattern (step S103).

  Under the above-described conditions, a sample in which the PEB set temperature is varied is created for each heat treatment apparatus using the flowchart of FIG. 1 (step S104). After cooling (step S105), development is performed (step S106). The conditions for the cooling treatment and the development treatment after the heat treatment are the same for each sample.

  The length of the exposure amount monitor pattern of each sample is measured (step S107). The PEB set temperature and the pattern length (effective exposure amount) of each heat treatment apparatus D.E. A relationship with M (μm) is obtained (step S108). 7 shows the set temperature and pattern length D.E. A correlation graph of M is shown. An approximate expression is obtained from this graph, based on which an optimum temperature at which the effective exposure amount is the same (the pattern length DM is the same) is calculated, and the optimum set temperature of each apparatus is obtained (step S109). Calibration of the set temperature of each heat treatment apparatus is performed from the calculated set temperature (step S110).

  (Table 1) shows the length “DM” of the exposure amount monitor pattern before and after calibration, the critical dimension “CD”, and the expected temperature before calibration.

  (Table 2) shows the difference between the maximum value and the minimum value of the exposure amount monitor pattern “ΔD.M”, the difference between the maximum value and the minimum value of the critical dimension “ΔCD”, the maximum value and the minimum value of the expected temperature. The difference “Δ expected temperature” is shown.

  As shown in Table 2, it was confirmed that the difference between the heat treatment apparatuses was calibrated for both the effective exposure amount (DM) and the critical dimension.

  According to the present reference example, it is possible to prevent the effective exposure amount obtained by the photosensitive resin film from varying between the heat treatment apparatuses from varying between the apparatuses. Then, the yield can be improved by manufacturing the semiconductor device using the calibrated apparatus.

  Although an example of application using the exposure monitor mark is illustrated, the length measuring means for the pattern after the exposure is not limited to an optical microscope or an optical line width measuring device, but a misalignment inspection device, Various methods such as a phase difference method, a differential interference method, a measurement method using a multi-wavelength light source, and the like can be applied to SEM, AFM, and the like as well as optical line width measurement means. It is also possible to use an alignment misalignment inspection function, a line width measurement function, or the like built in the exposure apparatus itself.

(Second reference example)
In this reference example, an example of a calibration evaluation method for in-plane variation when a plurality of heat sources exist in the heat treatment apparatus will be described.

  In this reference example, a method for calibrating variations in the effective exposure amount in the substrate surface when a heat treatment apparatus having a plurality of heat sources 301, 302, and 303 shown in FIG. 8 is used will be described. FIG. 9 is a flowchart showing the procedure of the calibration method for the heat treatment apparatus according to the second reference example of the present invention.

  Similarly to the first reference example, resist coating (step S101), pre-exposure heating (step S102), and exposure (step S103) are performed. As shown in FIG. 10, at the time of exposure, 311, 312, 313 including an exposure amount monitor pattern are formed on a resist film at a position corresponding to the position of each heat source 301, 302, 303.

  Using the flow of FIG. 1, a plurality of samples with varying PEB set temperatures are created (step S204). Thereafter, cooling processing (step S105) and development processing (step S106) are performed. The length of the exposure amount monitor pattern included in each pattern 311, 312, 313 is measured (step S 107).

  Then, the relationship between the PEB set temperature of each heat source and the pattern length (effective exposure amount) is obtained (step S208). For each heat source, an optimum temperature at which the effective exposure amount is the same (the pattern length is the same) is calculated based on the obtained relationship, and an optimum set temperature for each heat source is obtained (step S209). Calibration of the set temperature of each heat source is performed (step S210).

  Table 3 shows the length “DM”, the critical dimension “CD”, and the expected temperature before calibration before and after calibration.

  (Table 4) shows a difference ΔD. Between the maximum value and the minimum value of the exposure monitor pattern length. M, the difference ΔCD between the maximum value and the minimum value of the critical dimension, and the difference “Δ expected temperature” between the maximum value and the minimum value of the expected temperature.

  As shown in (Table 4), it was confirmed that the difference between the heat sources was calibrated together with the effective exposure amount (DM) and the critical dimension.

  According to the present reference example, it is possible to prevent the effective exposure amount obtained by the photosensitive resin film from varying between the heat treatment apparatuses from varying between the apparatuses. Then, the yield can be improved by manufacturing the semiconductor device using the calibrated apparatus.

  Although an example of application using the exposure monitor mark is illustrated, the length measuring means for the pattern after the exposure is not limited to an optical microscope or an optical line width measuring device, but a misalignment inspection device, Various methods such as a phase difference method, a differential interference method, a measurement method using a multi-wavelength light source, and the like can be applied to SEM, AFM, and the like as well as optical line width measurement means. It is also possible to use an alignment misalignment inspection function, a line width measurement function, or the like built in the exposure apparatus itself.

(First embodiment)
In this embodiment, a method for adjusting the development processing apparatus will be described.

Samples that have been subjected to photoresist film coating, pre-exposure heat treatment, exposure, PEB treatment, and cooling treatment are prepared. A plurality of samples are measured by shaking the set temperature during PEB processing. After the cooling treatment, the exposure monitor pattern dimension (DM _PEB : effective exposure dose) is measured with an optical line width measuring device. The measurement results are shown in FIG. From this, it was found that the relationship between the PEB temperature T (° C.) and the pattern dimension DM _PEB (μm) is expressed by the following equation.

DM _PEB = −0.125T + 41.2 (2)
The development processing apparatus shown in FIG. 12 is prepared. FIG. 12 is a diagram showing the configuration of the development processing apparatus according to the first embodiment of the present invention. 12A is a plan view, and FIG. 12B is a cross-sectional view. The developing device includes a nozzle 401 that discharges the developer 402 to the substrate 400. The length of the nozzle 401 in the longitudinal direction is equal to or longer than the diameter of the substrate. The nozzle 401 is moved from the application start position Ps to the application end position Pe while the developer 402 is being discharged, and the developer 402 is supplied onto the substrate 400. The distance D _gap between the nozzle 401 and the substrate 400 is swung with respect to the sample whose PEB temperature is swung.

After the development processing, the dimension of the exposure amount monitor mark (DM _DEV : effective exposure amount) is measured with an optical line width measuring device. The measurement results are shown in FIG. From this, it was found that the relationship between the PEB temperature (T), the distance between the developing nozzle and the substrate (D _gap ), and the effective exposure amount (DM _PEB ) is expressed by the following equation.

DM _DEV = −0.125T + 0.5D _gap + 30.7 (3)
A method for adjusting the development processing apparatus of the present application will be described with reference to the flowchart of FIG. FIG. 14 is a flowchart showing the procedure of the adjustment method of the development processing apparatus according to the first embodiment of the present invention.

First, application of a resist film (step S301) and heat treatment before exposure (step S302) are performed. The exposure amount monitor mark formed on the mask shown in FIG. 2 is transferred onto the resist film at a 30 mm pitch in both the x and y directions to form a latent image of the exposure amount monitor pattern (step S303). A plurality of samples subjected to the PEB process by varying the PEB set temperature are created (step S304). After the PEB process, the substrate is cooled (step S305).
After the cooling process, the dimension of the exposure amount monitor pattern is measured (step S306). As a result, the exposure monitor pattern size after the cooling process is as shown in FIG. 15, and when the distribution is plotted, it becomes a concentric distribution as shown in FIG. The in-plane temperature distribution was calculated as shown in FIG.

  Further, development processing is performed on the substrate (step S307), and the dimensions of each exposure amount monitor pattern are measured (step S308). The exposure monitor pattern dimensions after the development processing are as shown in FIG. 18, and the distribution is plotted as shown in the plan view of FIG. 17 and 18 were substituted into the expression (3) to obtain the distance (gap) between the developing nozzle and the substrate, and the result was as shown in FIG. As a result, the in-plane distribution is as shown in FIG. This is because the development method used here is a method of supplying the developer while scanning the linear development nozzle from the −x direction to the + x direction of the substrate, and the distance between the nozzle and the substrate. Are not adjusted to the same value, and the distance is adjusted to 1 mm (steps S309 and S310).

In this embodiment, the development processing apparatus is adjusted based on the measurement results of the exposure monitor marks after the heat treatment and after the development processing. However, as shown in the flowchart of FIG. It is also possible. For example, in a developing method in which a developer is supplied from a linear nozzle while discharging the developer from one end to the other, the effective exposure distribution is calculated on the scanning line at the same position of the nozzle. It is desirable to obtain it by averaging the effective exposure amount. The pattern length DM _DEV (exposure amount) distribution shown in FIG. 19 is obtained as shown in FIG. 23 when the average value of the exposure amount monitor pattern length DM _DEV on the line scanned by the position of the nozzle is obtained. The discharge amount distribution from the nozzle or the gap may be adjusted so that the exposure amount distribution is as constant as possible.

  Also, as shown in FIG. 24, even in a developing method in which the developer is supplied by rotating the wafer while discharging the developer from a linear nozzle, the effective exposure distribution is shown on the scanning line at the same position of the nozzle ( It is desirable to obtain the average effective exposure amount calculated on the concentric circles). When the exposure amount distribution shown in FIG. 19 is averaged on the scanning line (concentric circle), it is as shown in FIG. The discharge amount distribution from the nozzle or the gap may be adjusted so that the exposure amount distribution is as constant as possible.

  These methods can also be applied to a nozzle evaluation method for checking whether the flow rate distribution in the nozzle longitudinal direction is uniform.

  The adjustment of the development processing apparatus shown in FIGS. 13 and 24 can also be applied to the adjustment of the difference between apparatuses of a plurality of apparatuses. In this case, instead of obtaining the distribution of effective exposure amounts, the average value of the effective exposure amounts of the respective processing apparatuses is obtained, and the average value of the effective exposure amounts of the respective processing apparatuses is equalized from the nozzles. The discharge amount, gap, developer temperature, ambient temperature, and the like may be adjusted.

According to this embodiment, the temperature distribution of the post-exposure heat treatment and the development unevenness during the development treatment are collectively corrected by the development treatment, and the adjustment time is shortened.

  In addition, this invention is not limited to above-described embodiment, In the implementation stage, it can change variously in the range which does not deviate from the summary. Further, the above embodiments include inventions at various stages, and various inventions can be extracted by appropriately combining a plurality of disclosed constituent elements. For example, even if some constituent elements are deleted from all the constituent elements shown in the embodiment, at least one of the problems described in the column of the problem to be solved by the invention can be solved, and is described in the column of the effect of the invention. When at least one of the effects is obtained, a configuration in which this configuration requirement is deleted can be extracted as an invention.

The flowchart which shows the procedure of the calibration method of the heat processing apparatus concerning a 1st reference example. The top view which shows the structure of the photomask concerning a 1st reference example. The top view which shows the structure of the exposure amount monitor mark concerning a 1st reference example. The figure which shows intensity distribution on the wafer surface obtained when the exposure amount monitor mark shown in FIG. 3 is transcribe | transferred to a photoresist film. The figure which shows the film thickness distribution of the photoresist film after a heating and cooling process. The figure which shows the film thickness distribution of the photoresist film after image development processing. Set temperature and pattern length of each of the heat treatment apparatuses A to E The figure which shows the correlation graph of M. The figure which shows the structure of the heat processing apparatus concerning the 2nd reference example. The flowchart which shows the procedure of the calibration method of the heat processing apparatus concerning a 2nd reference example. The figure which shows the relationship between the position of a heat source and an exposure amount monitor pattern. The figure which shows the relationship between the dimension DM _PEB and PEB temperature of the exposure amount monitor pattern after a cooling process. 1 is a diagram illustrating a configuration of a development processing apparatus according to a first embodiment. It shows a gap dependency of the relationship between the dimension DM _DEV of PEB temperature after development and exposure dose monitor pattern. 5 is a flowchart showing a procedure of a developing method adjustment method according to the first embodiment. The figure which shows distribution of the dimension DM _PEB of the exposure amount monitor pattern after heat processing. The top view which shows distribution of the dimension DM _PEB of the exposure amount monitor pattern after heat processing. The top view which shows distribution of the temperature after heat processing. The figure which shows distribution of the dimension _DMDEV of the exposure amount monitor pattern after a development process. The top view which shows distribution of the dimension _DMDEV of the exposure amount monitor pattern after a development process. The figure which shows distribution of the gap of a substrate surface and a nozzle. The top view which shows distribution of the gap of a board | substrate surface and a nozzle. The flowchart which shows the procedure of the calibration method concerning 1st Embodiment. It shows a distribution of the average value of the exposure dose monitor pattern length DM _DEV on a line position is scanned with the nozzles. 1 is a diagram illustrating a configuration of a development processing apparatus according to a first embodiment. It shows a distribution of the average value of the exposure dose monitor pattern length DM _DEV on a line position is scanned with the nozzles.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 ... Mask 200 ... Exposure amount monitor mark 201 ... Translucent part 202 ... Light-shielding part

Claims (8)

Forming a photosensitive resin film on the substrate;
Preparing an exposure mask on which an exposure amount monitor mark for monitoring an effective exposure amount obtained by the photosensitive resin film according to the state of the exposure amount monitor pattern transferred to the photosensitive resin film;
Transferring the exposure amount monitor marks to a plurality of positions of the photosensitive resin film at a predetermined set exposure amount to form a plurality of exposure amount monitor patterns;
Heat-treating the substrate on which the exposure amount monitor pattern is formed;
Performing a cooling process on the heat-treated substrate;
A step of preparing a development processing apparatus that discharges a developer onto the photosensitive resin film and scans a nozzle having a length in a longitudinal direction larger than the maximum width of the substrate relative to the substrate;
A step of developing the photosensitive resin film using the development processing apparatus;
After the development processing, measuring the state of each exposure amount monitor pattern,
A step of obtaining an average value of the state of an exposure amount monitor pattern located on a scanned line at a position where the nozzle is located;
Obtaining an average value of the state of the exposure monitor pattern for a plurality of positions, and obtaining a distribution of the state of the exposure monitor pattern in the longitudinal direction of the nozzle;
Calculating a control parameter of the development processing device from a state distribution of an exposure monitor pattern;
Changing the control parameters of the development processing device according to the calculated control parameters;
A method for adjusting a development processing apparatus, comprising: Forming a photosensitive resin film on the substrate;
Preparing an exposure mask on which an exposure amount monitor mark for monitoring an effective exposure amount obtained by the photosensitive resin film according to the state of the exposure amount monitor pattern transferred to the photosensitive resin film;
For each substrate, transferring the exposure amount monitor marks to a plurality of positions of the photosensitive resin film at a predetermined set exposure amount, and forming a plurality of exposure amount monitor patterns;
Heat-treating each substrate on which the exposure amount monitor pattern is formed;
Performing a cooling process on each heat-treated substrate;
A step of measuring the state of each exposure amount monitor pattern after the cooling process;
Measuring the average value of the exposure monitor pattern state measured after the cooling process;
A step of preparing a plurality of development processing devices;
A step of performing development processing of the photosensitive resin film using each development processing apparatus;
After the development processing, measuring the state of each exposure amount monitor pattern,
A step of calculating an average value of an exposure amount monitor pattern for each substrate developed by each development processing apparatus;
Calculating a control parameter of each development processing device from an average value of the state of the exposure amount monitor pattern after the cooling process and an average value of the state of the exposure amount monitor pattern after the development process;
Changing the control parameters of each development processing device in accordance with the calculated control parameters;
A method for adjusting a development processing apparatus, comprising: Forming a photosensitive resin film on the substrate;
Preparing an exposure mask on which an exposure amount monitor mark for monitoring an effective exposure amount obtained by the photosensitive resin film according to the state of the exposure amount monitor pattern transferred to the photosensitive resin film;
Transferring the exposure amount monitor marks to a plurality of positions of the photosensitive resin film at a predetermined set exposure amount to form a plurality of exposure amount monitor patterns;
Heat-treating the substrate on which the exposure amount monitor pattern is formed;
A step of cooling the heat-treated substrate;
A step of preparing a plurality of development processing devices;
A step of performing development processing of the photosensitive resin film using each development processing apparatus;
After the development processing, measuring the state of each exposure amount monitor pattern,
A step of calculating an average value of an exposure amount monitor pattern for each substrate developed by each development processing apparatus;
Calculating a control parameter for each of the development processing devices from an average value of the state of the exposure amount monitor pattern;
Changing the control parameters of each of the development processing devices according to the calculated control parameters;
A method for adjusting a development processing apparatus, comprising:   In the exposure amount monitor mark, a plurality of blocks in which a light shielding portion and a light transmitting portion are arranged in one direction within a certain width p that cannot be resolved by the projection exposure apparatus are intermittently or continuously provided. The development processing apparatus according to claim 1, wherein the pattern is arranged in a direction, and a dimensional ratio between the light shielding portion and the light transmitting portion of the block changes monotonously in the one direction. Adjustment method. When the exposure wavelength of the exposure apparatus is λ, the numerical aperture on the wafer side is NA, and the coherence factor σ, the pitch P on the wafer is
λ / p ≧ (1 + σ) NA
The method of adjusting a development processing apparatus according to claim 4, wherein:   The development processing apparatus discharges a developing solution to the photosensitive resin film, and scans a nozzle having a length in a longitudinal direction larger than a maximum width of the substrate relative to the substrate. Item 4. The method for adjusting a development processing apparatus according to Item 2 or 3.   The development processing according to claim 1, wherein the control parameter of the development processing apparatus is at least one of a flow rate distribution in the longitudinal direction of the development nozzle, a developer flow rate, and a distance between the development nozzle and the substrate. Device adjustment method.   A method for manufacturing a semiconductor device, comprising: developing a photosensitive resin film using a development processing apparatus adjusted using the development processing apparatus adjustment method according to claim 1.

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