JP2007305643A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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JP2007305643A
JP2007305643A JP2006129918A JP2006129918A JP2007305643A JP 2007305643 A JP2007305643 A JP 2007305643A JP 2006129918 A JP2006129918 A JP 2006129918A JP 2006129918 A JP2006129918 A JP 2006129918A JP 2007305643 A JP2007305643 A JP 2007305643A
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metal member
resin case
cylindrical metal
hole
resin
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JP4882495B2 (en
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Shin Soyano
伸 征矢野
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Fuji Electric Co Ltd
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Fuji Electric Device Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor deice capable of reducing loosening when clamping a resin case and a member for heat radiation with a bolt. <P>SOLUTION: One end of a tubular metal member 15 projects from a through-hole 14, where the tubular metal member 15 is integrated with a resin case 11 for being embedded in the through-hole 14 of the resin case 11, and a step of which the center side is higher than an outer-periphery side is provided at the edge of the projecting tubular metal member 15, thus preventing resin flash from being routed to an upper surface at the center side of the tubular metal member 15 easily, whereby suppressing the upper surface at the center side of the tubular metal member 15 from being covered with the resin flash. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は半導体装置に関し、特に、半導体素子が実装された回路基板を樹脂ケースに収納した半導体装置に関する。   The present invention relates to a semiconductor device, and more particularly to a semiconductor device in which a circuit board on which a semiconductor element is mounted is accommodated in a resin case.

近年、低損失で破壊耐量の大きいＩＧＢＴ（Insulated Gate Bipolar Transistor）などの半導体素子を回路基板に搭載し、それを樹脂ケースに収納した半導体装置（パワーモジュールまたはインテリジェントパワーモジュールと称される。）が、インバータや無停電電源装置などの電力変換装置に適用されている。   In recent years, a semiconductor device (referred to as a power module or intelligent power module) in which a semiconductor element such as an IGBT (Insulated Gate Bipolar Transistor) having a low loss and a large breakdown resistance is mounted on a circuit board and accommodated in a resin case. It is applied to power converters such as inverters and uninterruptible power supplies.

図４は、従来の半導体装置の外観を示す図であり、（Ａ）が斜視図、（Ｂ）が上面図である。
半導体装置５０は、ＩＧＢＴなどの半導体素子が実装された回路基板（図示せず）を収納した樹脂ケース５１を有している。樹脂ケース５１上には、内部の回路基板の端子部から引き出された複数のリードピン５２や、端子５３が設けられている。また、樹脂ケース５１には、貫通穴５４が形成されており、その貫通穴５４には樹脂ケース５１と一体成形された筒状金属部材５５が埋め込まれている。 4A and 4B are views showing the appearance of a conventional semiconductor device, in which FIG. 4A is a perspective view and FIG. 4B is a top view.
The semiconductor device 50 includes a resin case 51 that houses a circuit board (not shown) on which a semiconductor element such as an IGBT is mounted. On the resin case 51, a plurality of lead pins 52 and terminals 53 drawn from the terminal portions of the internal circuit board are provided. A through hole 54 is formed in the resin case 51, and a cylindrical metal member 55 that is integrally formed with the resin case 51 is embedded in the through hole 54.

図５は、図４（Ｂ）のＡ−Ａ線での断面図である。
従来の半導体装置５０において、筒状金属部材５５は、貫通穴５４の深さ、つまり樹脂ケース５１の厚みと同じ長さで設けられている。 FIG. 5 is a cross-sectional view taken along line AA in FIG.
In the conventional semiconductor device 50, the cylindrical metal member 55 is provided with the same length as the depth of the through hole 54, that is, the thickness of the resin case 51.

筒状金属部材５５には、図示しないボルトが通され、放熱用の金属ベース５６が図示しない冷却フィンとともに樹脂ケース５１に取り付けられる。このような筒状金属部材５５を設けることにより、貫通穴５４の外壁が補強され、ボルトの締め付け時に樹脂ケース５１の割れなどを防止することができる（例えば特許文献１参照）。
特開平８−１６２５７２号公報 A bolt (not shown) is passed through the cylindrical metal member 55, and a metal base 56 for heat dissipation is attached to the resin case 51 together with a cooling fin (not shown). By providing such a cylindrical metal member 55, the outer wall of the through hole 54 is reinforced, and the resin case 51 can be prevented from cracking when the bolt is tightened (see, for example, Patent Document 1).
JP-A-8-162572

しかし、従来の半導体装置では、図５で示したような筒状金属部材５５が貫通穴５４の深さ、つまり樹脂ケース５１の厚みと同じ長さで設けられているため、樹脂ケース５１の成形時に発生する樹脂バリが、筒状金属部材５５の上面に薄皮のように付着することがあった。このような樹脂被りがあるまま、ボルトを締め付けると、長期の温度サイクルなどにてボルトが緩み、放熱特性が悪化する問題あった。   However, in the conventional semiconductor device, the cylindrical metal member 55 as shown in FIG. 5 is provided with the same depth as the depth of the through hole 54, that is, the thickness of the resin case 51. Sometimes, resin burrs generated sometimes adhere to the upper surface of the cylindrical metal member 55 like a thin skin. If the bolt is tightened with such a resin cover, the bolt loosens due to a long-term temperature cycle and the heat dissipation characteristics deteriorate.

本発明はこのような点に鑑みてなされたものであり、樹脂ケースと放熱用部材とをボルトで締め付ける際の緩みを低減可能な半導体装置を提供することを目的とする。   The present invention has been made in view of such a point, and an object thereof is to provide a semiconductor device capable of reducing loosening when a resin case and a heat radiating member are tightened with a bolt.

本発明では上記問題を解決するために、半導体素子が実装された回路基板を樹脂ケースに収納した半導体装置において、前記樹脂ケースに形成された貫通穴に、前記樹脂ケースと一体成形で埋め込まれた筒状金属部材を有し、前記筒状金属部材の一端は、前記貫通穴から突出しており、突出した前記筒状金属部材の端部に中心側が外周側よりも高い段差が形成されていることを特徴とする半導体装置が提供される。   In the present invention, in order to solve the above problem, in a semiconductor device in which a circuit board on which a semiconductor element is mounted is accommodated in a resin case, the resin case is embedded in a through hole formed in the resin case. It has a cylindrical metal member, one end of the cylindrical metal member protrudes from the through hole, and a step is formed at the end of the protruding cylindrical metal member whose center side is higher than the outer peripheral side. A semiconductor device is provided.

上記の構成によれば、樹脂ケースの貫通穴に樹脂ケースと一体成形で埋め込まれた筒状金属部材は、一端が貫通穴から突出しており、突出した筒状金属部材の端部に中心側が外周側よりも高い段差が形成されているので、筒状金属部材の中心側の上面が樹脂バリによって覆われることが抑制される。   According to the above configuration, the cylindrical metal member embedded integrally with the resin case in the through hole of the resin case has one end protruding from the through hole, and the center side is the outer periphery at the end of the protruding cylindrical metal member Since the step which is higher than the side is formed, the upper surface on the center side of the cylindrical metal member is suppressed from being covered with the resin burr.

本発明の半導体装置では、樹脂ケースの貫通穴に樹脂ケースと一体成形で埋め込まれた筒状金属部材を貫通穴から突出させ、突出した筒状金属部材の端部に中心側が外周側よりも高い段差を形成しているので、筒状金属部材の中心側の上面が樹脂バリによって覆われることを抑制することができる。これにより、樹脂ケースと放熱用部材とをボルトで締め付ける際の緩みを低減することができる。   In the semiconductor device of the present invention, the cylindrical metal member embedded integrally with the resin case in the through hole of the resin case is protruded from the through hole, and the center side is higher than the outer peripheral side at the end of the protruding cylindrical metal member Since the step is formed, it is possible to suppress the upper surface on the center side of the cylindrical metal member from being covered with the resin burr. Thereby, the looseness at the time of fastening a resin case and a heat radiating member with a volt | bolt can be reduced.

以下、本発明の実施の形態を図面を参照して詳細に説明する。
図１は、本実施の形態の半導体装置の外観を示す図であり、（Ａ）が斜視図、（Ｂ）が上面図である。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
1A and 1B are external views of the semiconductor device of this embodiment, where FIG. 1A is a perspective view and FIG. 1B is a top view.

本実施の形態の半導体装置１０は、ＩＧＢＴなどの半導体素子が実装された回路基板（図示せず）を収納した樹脂ケース１１を有している。樹脂ケース１１上には、内部の回路基板の端子部から引き出された複数のリードピン１２や、端子１３が設けられている。また、樹脂ケース１１には、貫通穴１４が形成されており、その貫通穴１４には樹脂ケース１１と一体成形された筒状金属部材１５が埋め込まれている。この貫通穴１４は、樹脂ケース１１に放熱用の金属ベースや冷却フィンを取り付ける際のボルトを挿入するための穴である。筒状金属部材１５は貫通穴１４の外壁を補強しており、ボルトの締め付け時に、樹脂ケース１１の割れなどを防止している。   The semiconductor device 10 of the present embodiment has a resin case 11 that houses a circuit board (not shown) on which a semiconductor element such as an IGBT is mounted. On the resin case 11, a plurality of lead pins 12 drawn out from terminal portions of an internal circuit board and terminals 13 are provided. Further, a through hole 14 is formed in the resin case 11, and a cylindrical metal member 15 integrally formed with the resin case 11 is embedded in the through hole 14. This through hole 14 is a hole for inserting a bolt when attaching a metal base for heat dissipation or a cooling fin to the resin case 11. The cylindrical metal member 15 reinforces the outer wall of the through hole 14 and prevents the resin case 11 from cracking when the bolt is tightened.

図２は、図１（Ｂ）のＡ−Ａ線での断面図である。
本実施の形態の筒状金属部材１５は、従来と異なり、一端が貫通穴１４から突出しており、突出した筒状金属部材１５の端部に、中心側が外周側よりも高い段差が形成されている。このような筒状金属部材１５には、図示しないボルトが通され、放熱用の金属ベース１６が図示しない冷却フィンとともに樹脂ケース１１に取り付けられる。 FIG. 2 is a cross-sectional view taken along line AA in FIG.
Unlike the conventional case, the cylindrical metal member 15 of the present embodiment has one end protruding from the through hole 14, and a step that is higher on the center side than the outer peripheral side is formed at the end of the protruding cylindrical metal member 15. Yes. A bolt (not shown) is passed through such a cylindrical metal member 15, and a metal base 16 for heat dissipation is attached to the resin case 11 together with a cooling fin (not shown).

筒状金属部材１５を貫通穴１４から突出させ、なおかつ上記のような段差を設けることによって以下のような効果が得られる。
図３は、樹脂バリが発生した場合のボルトの取り付け部の様子を示しており、（Ａ）は段差がない筒状金属部材を用いた場合、（Ｂ）は段差を有した筒状金属部材を用いた場合を示す図である。 The following effects can be obtained by projecting the cylindrical metal member 15 from the through hole 14 and providing the step as described above.
FIG. 3 shows a state of a bolt mounting portion when a resin burr is generated. (A) shows a case where a cylindrical metal member having no step is used, and (B) shows a cylindrical metal member having a step. It is a figure which shows the case where is used.

ここでは、図２と同様に、図１（Ｂ）のＡ−Ａ線での断面図を示している。ただし、図３（Ａ）で示す筒状金属部材１５ａには、図２の筒状金属部材１５のような段差を設けていない。このような貫通穴１４から突出しただけで段差のない筒状金属部材１５ａを用いると、縦に伸びる樹脂バリ２０が発生しやすく、それが筒状金属部材１５ａの上面に回り込む場合がある。その場合、樹脂を挟んだままボルトを締め付けてしまい、温度サイクルなどにてボルトが緩んでしまう恐れがある。   Here, similarly to FIG. 2, a cross-sectional view taken along line AA of FIG. However, the cylindrical metal member 15a shown in FIG. 3A is not provided with a step like the cylindrical metal member 15 of FIG. When the cylindrical metal member 15a that protrudes from the through hole 14 and has no step is used, the resin burr 20 that extends vertically is likely to be generated, and it may wrap around the upper surface of the cylindrical metal member 15a. In that case, the bolt may be tightened with the resin sandwiched, and the bolt may be loosened due to a temperature cycle or the like.

これに対し、図３（Ｂ）のように、筒状金属部材１５の一端を樹脂ケース１１の貫通穴１４から突出させ、なおかつ中心側が外周側よりも高い段差を設けることによって、縦に伸びる樹脂バリが発生しにくくなる。そして、横に伸びるような樹脂バリ２１が発生する場合であっても、段差があるため、筒状金属部材１５の上面に樹脂バリ２１が回りこみにくくなる。つまり、筒状金属部材１５の中心側の上面が樹脂バリ２１によって覆われることを抑制することができる。これにより、樹脂ケース１１と金属ベース１６や冷却フィンとをボルトで締め付ける際の緩みを低減することができ、放熱特性の悪化を防止することができる。   On the other hand, as shown in FIG. 3B, one end of the cylindrical metal member 15 is protruded from the through hole 14 of the resin case 11, and the center side is provided with a step that is higher than the outer peripheral side, thereby extending vertically. Burrs are less likely to occur. Even when the resin burr 21 that extends sideways is generated, the resin burr 21 is unlikely to wrap around the upper surface of the cylindrical metal member 15 because of the level difference. That is, it is possible to prevent the upper surface on the center side of the cylindrical metal member 15 from being covered with the resin burr 21. Thereby, the looseness at the time of fastening the resin case 11, the metal base 16, and the cooling fin with the bolt can be reduced, and deterioration of the heat dissipation characteristics can be prevented.

また、ボルトの締め付けの際の樹脂バリ２１の影響を低減できるので、樹脂バリ２１を取り除くような成形作業も効率化することができる。   In addition, since the influence of the resin burr 21 at the time of tightening the bolt can be reduced, the molding operation for removing the resin burr 21 can be made more efficient.

本実施の形態の半導体装置の外観を示す図であり、（Ａ）が斜視図、（Ｂ）が上面図である。2A and 2B are diagrams illustrating an appearance of a semiconductor device of the present embodiment, where FIG. 3A is a perspective view and FIG. 図１（Ｂ）のＡ−Ａ線での断面図である。It is sectional drawing in the AA of FIG. 1 (B). 樹脂バリが発生した場合のボルトの取り付け部の様子を示しており、（Ａ）は段差がない筒状金属部材を用いた場合、（Ｂ）は段差を有した筒状金属部材を用いた場合を示す図である。When the resin burr | flash generate | occur | produces, the mode of the attachment part of the volt | bolt is shown, When (A) uses the cylindrical metal member without a level | step difference, (B) uses the cylindrical metal member with a level | step difference FIG. 従来の半導体装置の外観を示す図であり、（Ａ）が斜視図、（Ｂ）が上面図である。It is a figure which shows the external appearance of the conventional semiconductor device, (A) is a perspective view, (B) is a top view. 図４（Ｂ）のＡ−Ａ線での断面図である。It is sectional drawing in the AA line of FIG. 4 (B).

符号の説明Explanation of symbols

１０ 半導体装置
１１ 樹脂ケース
１２ リードピン
１３ 端子
１４ 貫通穴
１５、１５ａ 筒状金属部材
１６ 金属ベース
２０、２１ 樹脂バリ
DESCRIPTION OF SYMBOLS 10 Semiconductor device 11 Resin case 12 Lead pin 13 Terminal 14 Through-hole 15, 15a Cylindrical metal member 16 Metal base 20, 21 Resin burr

Claims (2)

半導体素子が実装された回路基板を樹脂ケースに収納した半導体装置において、
前記樹脂ケースに形成された貫通穴に、前記樹脂ケースと一体成形で埋め込まれた筒状金属部材を有し、
前記筒状金属部材の一端は、前記貫通穴から突出しており、突出した前記筒状金属部材の端部に中心側が外周側よりも高い段差が形成されていることを特徴とする半導体装置。 In a semiconductor device in which a circuit board on which a semiconductor element is mounted is stored in a resin case,
In a through hole formed in the resin case, a cylindrical metal member embedded in the resin case and integrally molded,
One end of the cylindrical metal member protrudes from the through hole, and a step having a higher center side than the outer peripheral side is formed at the end of the protruding cylindrical metal member. 前記貫通穴は、前記樹脂ケースに放熱用部材を取り付ける際のボルト挿入穴であることを特徴とする請求項１記載の半導体装置。
The semiconductor device according to claim 1, wherein the through hole is a bolt insertion hole when a heat dissipation member is attached to the resin case.
JP2006129918A 2006-05-09 2006-05-09 Semiconductor device Active JP4882495B2 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014138080A (en) * 2013-01-17 2014-07-28 Mitsubishi Electric Corp Semiconductor device
CN111199960A (en) * 2018-11-20 2020-05-26 三菱电机株式会社 Semiconductor device, method for manufacturing the same, and power conversion device
JP2020174159A (en) * 2019-04-12 2020-10-22 富士電機株式会社 Semiconductor device and method for manufacturing semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014138080A (en) * 2013-01-17 2014-07-28 Mitsubishi Electric Corp Semiconductor device
CN111199960A (en) * 2018-11-20 2020-05-26 三菱电机株式会社 Semiconductor device, method for manufacturing the same, and power conversion device
JP2020088053A (en) * 2018-11-20 2020-06-04 三菱電機株式会社 Semiconductor device, manufacturing method of the same, and electric power conversion device
JP7045975B2 (en) 2018-11-20 2022-04-01 三菱電機株式会社 Semiconductor devices and their manufacturing methods, as well as power conversion devices
US11587797B2 (en) 2018-11-20 2023-02-21 Mitsubishi Electric Corporation Semiconductor device, method for manufacturing the same, and power converter
JP2020174159A (en) * 2019-04-12 2020-10-22 富士電機株式会社 Semiconductor device and method for manufacturing semiconductor device
JP7238565B2 (en) 2019-04-12 2023-03-14 富士電機株式会社 Semiconductor device and method for manufacturing semiconductor device

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